An EMI shielding system and processing method for a gallium nitride fast charging power source

By designing a multi-layer conductive layer and shielding coating EMI shielding system in the gallium nitride fast charging power supply, using the shielding cover and pad connection, the problem of waste electromagnetic shielding material of the gallium nitride fast charging power supply is solved, achieving more efficient electromagnetic shielding performance and smaller motherboard size.

CN118870784BActive Publication Date: 2025-01-03SHENZHEN AMC TECH CO LTD
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Patent Information

Application Number
CN202411336809.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-09-25
Publication Date
2025-01-03
Estimated Expiration
2044-09-25

AI Technical Summary

Technical Problem

The EMI shielding technology of existing gallium nitride fast charging power supplies has the problem of material waste, especially in larger power supplies, which cannot effectively use space for electromagnetic shielding.

Method used

Design a gallium nitride fast charging power supply EMI shielding system including a shielding cover and an EMI filter circuit. By setting up multiple conductive layers and shielding coatings on the motherboard, the ends of the shielding cover are connected to the pads to achieve electromagnetic shielding. And reduce material usage through wiring design and welding technology.

Benefits of technology

It greatly enhances the protection performance of electromagnetic shielding and reduces the amount of shielding materials, and is suitable for application scenarios with smaller motherboard sizes and high electromagnetic shielding requirements.

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Abstract

The present invention relates to an EMI shielding system and processing method of a gallium nitride fast charging power source, comprising a mainboard, on which a fast charging circuit is arranged, and a shielding cover, which is a square cover body with an opening at the lower end; an EMI filter circuit for filtering the fast charging circuit is arranged on the inner top of the shielding cover, the outer surface of the shielding cover is provided with a first shielding coating, a plurality of insulating end pins are arranged at the lower end of the shielding cover, and the inner and outer sides of the end pins are respectively provided with a first conductive layer and a second conductive layer; a plurality of pins on the EMI filter circuit are respectively electrically connected to a plurality of first conductive layers, a soldering pad electrically connected to a corresponding first conductive layer is arranged on the mainboard, and the EMI filter circuit is connected to the circuit of the mainboard through the plurality of soldering pads; applying the method of the present application can greatly enhance the electromagnetic shielding protection performance of the fast charging circuit, while greatly reducing the amount of shielding material used, and can also make the size of the mainboard further smaller.
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Description

Technical Field

[0001] The present invention relates to the technical field of gallium nitride fast charging power supplies, and more specifically, to an EMI shielding system and a processing method for a gallium nitride fast charging power supply. Background Art

[0002] Gallium nitride (GaN) is a new type of semiconductor material with excellent performance and characteristics. It is widely used in high-frequency power electronic devices and chargers. GaN technology has the following main features: High efficiency: Compared with traditional silicon materials, gallium nitride has lower on-resistance and switching loss, and can achieve higher conversion efficiency and power density. Small size: Gallium nitride can achieve miniaturization and high integration of devices, so products such as chargers can be smaller and more portable, easy to carry and use. High-frequency characteristics: Gallium nitride has excellent high-frequency characteristics, which can achieve faster switching speeds and lower output ripple current, improving the stability and efficiency of the equipment. Thermal stability: Gallium nitride has high thermal stability and high temperature resistance, which can meet the needs of long-term stable operation of high-power electronic devices.

[0003] At present, electromagnetic shielding of GaN fast charging power supplies usually takes the form of providing a shielding coating on the entire outer shell of the power supply. However, for some larger power supplies, a large part of the space does not need to be designed for electromagnetic shielding, which will result in a large waste of the shielding coating. There is a need for an EMI shielding system and processing method for GaN fast charging power supplies that can ensure the shielding effect while reducing the waste of the shielding coating. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide an EMI shielding system for a gallium nitride fast charging power supply in view of the above-mentioned defects of the prior art, and also provide a processing method for the EMI shielding system of a gallium nitride fast charging power supply.

[0005] The technical solution adopted by the present invention to solve the technical problem is:

[0006] An EMI shielding system for a gallium nitride fast charging power source is constructed, comprising a mainboard, on which a fast charging circuit is arranged, and further comprising a shielding cover, which is a square cover body with an opening at the lower end; an EMI filter circuit for filtering the fast charging circuit is arranged on the inner top of the shielding cover, and a first shielding coating is arranged on the outer surface of the shielding cover, and a plurality of insulating end pins are arranged at the lower end of the shielding cover, and the inner side surface and the outer side surface of the end pins are respectively provided with a first conductive layer and a second conductive layer; a plurality of pins on the EMI filter circuit are respectively electrically connected to a plurality of the first conductive layers, and a soldering pad electrically connected to the first conductive layer is arranged on the mainboard, and the EMI filter circuit is connected to the circuit of the mainboard through the plurality of soldering pads; a plurality of openings corresponding to the end pins are arranged on the mainboard, and a second shielding coating located in an area enclosed by the plurality of openings is arranged on the lower surface of the mainboard, and the first shielding coating and the second shielding coating are electrically conductive through the plurality of the second conductive layers.

[0007] The EMI shielding system of the gallium nitride fast charging power supply described in the present invention, wherein an insulating coating is provided between the second shielding coating and the lower surface of the mainboard.

[0008] The EMI shielding system of the gallium nitride fast charging power supply described in the present invention, wherein a conductive spring is provided on the lower surface of the mainboard, and the conductive spring connects the second shielding coating and the second conductive layer.

[0009] The EMI shielding system of the gallium nitride fast charging power supply described in the present invention, wherein the conductive spring includes a U-shaped clamping portion for clamping the end pin, one end of the clamping portion is fixedly connected to the mainboard through a connecting sheet, and the other end is fitted with the second shielding coating through a conductive sheet.

[0010] The EMI shielding system of the gallium nitride fast charging power supply described in the present invention is characterized in that a first transverse threaded hole is provided on the clamping portion, and a second threaded hole corresponding to the first threaded hole is provided on the end foot.

[0011] The EMI shielding system of the gallium nitride fast charging power supply described in the present invention, wherein, after the shielding cover is assembled, the height of the lower end of the first conductive layer is higher than the height of the lower end of the opening.

[0012] The EMI shielding system of the gallium nitride fast charging power source described in the present invention, wherein the end pins are flat.

[0013] A method for processing an EMI shielding system of a gallium nitride fast charging power source is applied to the EMI shielding system of the gallium nitride fast charging power source as described above, wherein the method comprises the steps of:

[0014] Design the routing of the overall circuit, design a separate area for the fast charging circuit, design an EMI filter circuit separated from the overall circuit, and design multiple pads around the above area in the overall circuit that are connected to the EMI filter circuit;

[0015] The EMI filter circuit is manufactured on the shielding cover, the inner side and the outer side of the end pin of the shielding cover are respectively provided with a first conductive layer and a second conductive layer, a plurality of pins on the EMI filter circuit are respectively electrically connected to the plurality of first conductive layers, and a first shielding coating is provided on the outer surface of the shielding cover, and the first shielding coating is electrically connected to the plurality of second conductive layers;

[0016] A circuit board is manufactured according to the designed circuit, and holes are punched on the circuit board according to the positions of the pads, and a second shielding coating is manufactured in the area enclosed by the multiple openings on the lower surface of the mainboard;

[0017] Insert the multiple end pins of the shielding cover into the openings one by one and fix them, microwave weld the first conductive layer and the pads accordingly, and electrically connect the second conductive layer and the second shielding coating layer.

[0018] The beneficial effects of the present invention are as follows: designing the routing of the overall circuit, designing a separate area for the fast charging circuit, designing an EMI filter circuit separated from the overall circuit, and designing a plurality of pads surrounding the above-mentioned area in the overall circuit and connected to the EMI filter circuit; making the EMI filter circuit on a shielding cover, and providing a first conductive layer and a second conductive layer on the inner and outer sides of the end pins of the shielding cover, respectively, and a plurality of pins on the EMI filter circuit are electrically connected to the plurality of first conductive layers respectively, and a first shielding coating is provided on the outer surface of the shielding cover, and the first shielding coating is electrically connected to the plurality of second conductive layers; making a circuit board according to the designed circuit, and punching holes on the circuit board according to the positions of the pads, and making a second shielding coating in the area enclosed by the plurality of openings on the lower surface of the mainboard; inserting the plurality of end pins of the shielding cover into the openings one by one and fixing them, microwave welding the first conductive layer and the pads correspondingly, and electrically connecting the second conductive layer to the second shielding coating; applying the method of the present application can greatly enhance the electromagnetic shielding protection performance of the fast charging circuit, while greatly reducing the amount of shielding material used, and can also make the size of the mainboard further smaller. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the present invention will be further described below in conjunction with the accompanying drawings and embodiments. The drawings described below are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work:

[0020] Figure 1It is a cross-sectional view of the EMI shielding system of the gallium nitride fast charging power supply of a preferred embodiment of the present invention;

[0021] Figure 2 It is a flow chart of the EMI shielding system processing method of the gallium nitride fast charging power supply according to the preferred embodiment of the present invention. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the following will be described clearly and completely in combination with the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are partial embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work belong to the protection scope of the present invention.

[0023] The EMI shielding system of the gallium nitride fast charging power supply of the preferred embodiment of the present invention is as follows: Figure 1 As shown, it includes a mainboard 1, on which a fast charging circuit 2 is arranged, and also includes a shielding cover 3, which is a square cover body with an opening at the lower end; an EMI filter circuit 4 for filtering the fast charging circuit 2 is arranged on the inner top of the shielding cover 3, and a first shielding coating 30 is arranged on the outer surface of the shielding cover 3, and a plurality of insulating end pins 31 are arranged at the lower end of the shielding cover 3, and the inner side and outer side surfaces of the end pins 31 are respectively provided with a first conductive layer 32 and a second conductive layer 33; a plurality of pins on the EMI filter circuit 4 are respectively electrically connected to the plurality of first conductive layers 32, and a soldering pad 10 electrically connected to the first conductive layer 32 is arranged on the mainboard 1, and the EMI filter circuit 4 is connected to the circuit of the mainboard 1 through the plurality of soldering pads 10; a plurality of openings 11 corresponding to the end pins 31 are arranged on the mainboard 1, and a second shielding coating 12 located in the area enclosed by the plurality of openings 11 is arranged on the lower surface of the mainboard 1, and the first shielding coating 30 and the second shielding coating 12 are electrically conductive through the plurality of second conductive layers 33;

[0024] The wiring design of the overall circuit is carried out, a separate area is designed for the fast charging circuit 2, an EMI filter circuit 4 separated from the overall circuit is designed, and multiple pads 10 surrounding the above-mentioned area connected to the EMI filter circuit 4 are designed in the overall circuit; the EMI filter circuit 4 is made on the shielding cover 3, and the inner and outer sides of the end pins 31 of the shielding cover 3 are respectively provided with a first conductive layer 32 and a second conductive layer 33, and multiple pins on the EMI filter circuit 4 are respectively electrically connected to the multiple first conductive layers 32, and the outer surface of the shielding cover 3 is provided with a first shielding coating 30, and the first shielding coating 30 is electrically connected to the multiple second conductive layers 33; a circuit board is made according to the designed circuit, and holes are punched on the circuit board according to the positions of the pads 10, and a second shielding coating 12 is made in the area enclosed by the multiple openings 11 on the lower surface of the mainboard; the multiple end pins 31 of the shielding cover 3 are inserted into the openings 11 one by one and fixed, the first conductive layer 32 and the pads 10 are correspondingly microwave welded, and the second conductive layer 33 is electrically connected to the second shielding coating 12;

[0025] By applying the method of the present application, assembly is convenient, and after assembly, electromagnetic shielding is performed by a combination of complete enclosure and shielding by the shielding cover 3 and the second shielding coating 12 and filtering by the EMI filter circuit 4, which can greatly enhance the electromagnetic shielding protection performance of the fast charging circuit, while greatly reducing the amount of shielding material used, and can further reduce the size of the mainboard, so that it can be used in smaller application scenarios with high requirements for electromagnetic shielding.

[0026] Preferably, an insulating coating 13 is provided between the second shielding coating 12 and the lower surface of the mainboard 1. The insulating coating 13 can prevent the conductive property of the second shielding coating 12 from affecting the end pins of the lower surface of the mainboard 1.

[0027] Preferably, a conductive spring sheet 14 is provided on the lower surface of the mainboard 1, and the conductive spring sheet 14 connects the second shielding coating 12 and the second conductive layer 33; the conductive spring sheet 14 includes a U-shaped clamping portion 140 for clamping the end foot 31, one end of the clamping portion 140 is fixedly connected to the mainboard 1 through a connecting sheet 141, and the other end is fitted with the second shielding coating 12 through a conductive sheet 142; after the shielding cover 3 is assembled, the height of the lower end of the first conductive layer 32 is higher than the height of the lower end of the opening 11; during assembly, after the end foot 31 passes through the opening 11, it is clamped and positioned by the clamping portion 140, at this time, the first conductive layer 32 does not expose the opening 11 downward, and the second conductive layer 33 exposes the opening 11 downward, and the clamping portion 140 and the conductive sheet 142 make the second conductive layer 33 conductive with the second shielding coating 12; adopting this installation structure design, the structure is simple, easy to assemble, and the conduction stability is good.

[0028] Preferably, a first transverse threaded hole is provided on the clamping portion 140, and a second threaded hole corresponding to the first threaded hole is provided on the end foot 31, so as to facilitate screw locking, maintain stability after assembly, and make assembly very simple.

[0029] Preferably, the end foot 31 is flat, which is convenient for positioning during assembly, improves stability, and facilitates screw locking operations; of course, it is understandable that other shapes can also be used for implementation, and this is not limited.

[0030] A method for processing an EMI shielding system of a gallium nitride fast charging power source is applied to the EMI shielding system of the gallium nitride fast charging power source as described above. Figure 2 As shown, the method comprises the steps of:

[0031] S01: Design the routing of the overall circuit, design a separate area for the fast charging circuit, design an EMI filter circuit separated from the overall circuit, and design multiple pads around the above area in the overall circuit that are connected to the EMI filter circuit;

[0032] S02: The EMI filter circuit is manufactured on the shielding cover, the inner side surface and the outer side surface of the end pin of the shielding cover are respectively provided with a first conductive layer and a second conductive layer, a plurality of end pins on the EMI filter circuit are respectively electrically connected to the plurality of first conductive layers, and a first shielding coating is provided on the outer surface of the shielding cover, and the first shielding coating is electrically connected to the plurality of second conductive layers;

[0033] S03: manufacturing a circuit board according to the designed circuit, punching holes on the circuit board according to the positions of the pads, and manufacturing a second shielding coating in the area enclosed by the multiple openings on the lower surface of the mainboard;

[0034] S04: inserting the multiple end pins of the shielding cover into the openings one by one and fixing them, microwave welding the first conductive layer and the pads accordingly, and electrically connecting the second conductive layer and the second shielding coating layer;

[0035] By applying the method of the present application, assembly is convenient, and after assembly, electromagnetic shielding is performed by a combination of complete enclosure shielding through the shielding cover and the second shielding coating and EMI filtering circuit filtering. This can greatly enhance the electromagnetic shielding protection performance of the fast charging circuit, while greatly reducing the amount of shielding material used. The size of the mainboard can also be further reduced, making it suitable for smaller application scenarios with high requirements for electromagnetic shielding.

[0036] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the appended claims of the present invention.

Claims

1. An EMI shielding system for a gallium nitride fast charging power source, comprising a mainboard, on which a fast charging circuit is provided, characterized in that: It also includes a shielding cover, which is a square cover with an opening at the lower end; an EMI filter circuit for filtering the fast charging circuit is arranged on the inner top of the shielding cover, a first shielding coating is arranged on the outer surface of the shielding cover, a plurality of insulating end pins are arranged at the lower end of the shielding cover, and the inner and outer sides of the end pins are respectively provided with a first conductive layer and a second conductive layer; a plurality of pins on the EMI filter circuit are respectively electrically connected to a plurality of the first conductive layers, and a soldering pad electrically connected to the first conductive layer is arranged on the mainboard, and the EMI filter circuit is connected to the circuit of the mainboard through a plurality of the soldering pads; a plurality of openings corresponding to the end pins are arranged on the mainboard, and a second shielding coating located in an area surrounded by a plurality of openings is arranged on the lower surface of the mainboard, and the first shielding coating and the second shielding coating are electrically connected through a plurality of the second conductive layers; the routing design is performed on the overall circuit, a separate area is designed for the fast charging circuit, an EMI filter circuit separated from the overall circuit is designed, and a plurality of soldering pads surrounding the above-mentioned area connected to the EMI filter circuit are designed in the overall circuit; The EMI filter circuit is manufactured on the shielding cover, the inner side and the outer side of the end pin of the shielding cover are respectively provided with a first conductive layer and a second conductive layer, a plurality of pins on the EMI filter circuit are respectively electrically connected to the plurality of first conductive layers, and a first shielding coating is provided on the outer surface of the shielding cover, and the first shielding coating is electrically connected to the plurality of second conductive layers; A circuit board is manufactured according to the designed circuit, and holes are punched on the circuit board according to the positions of the pads, and a second shielding coating is manufactured in the area enclosed by the multiple openings on the lower surface of the mainboard; Inserting the multiple end pins of the shielding cover into the openings one by one and fixing them, microwave welding the first conductive layer and the pads, and electrically connecting the second conductive layer and the second shielding coating layer; An insulating coating is arranged between the second shielding coating and the lower surface of the main board; a conductive spring is arranged on the lower surface of the main board, and the conductive spring connects the second shielding coating and the second conductive layer; the conductive spring comprises a U-shaped clamping portion for clamping the end foot, one end of the clamping portion is fixedly connected to the main board through a connecting sheet, and the other end is fitted with the second shielding coating through a conductive sheet; a first transverse threaded hole is arranged on the clamping portion, and a second threaded hole corresponding to the first threaded hole is arranged on the end foot; after the shielding cover is assembled, the height of the lower end of the first conductive layer is higher than the height of the lower end of the opening; the end foot is flat.

2. A method for processing an EMI shielding system of a gallium nitride fast charging power supply, applied to the EMI shielding system of the gallium nitride fast charging power supply as claimed in claim 1, characterized in that: The method comprises the steps of: Design the routing of the overall circuit, design a separate area for the fast charging circuit, design an EMI filter circuit separated from the overall circuit, and design multiple pads around the above area in the overall circuit that are connected to the EMI filter circuit; The EMI filter circuit is manufactured on the shielding cover, the inner side and the outer side of the end pin of the shielding cover are respectively provided with a first conductive layer and a second conductive layer, a plurality of pins on the EMI filter circuit are respectively electrically connected to the plurality of first conductive layers, and a first shielding coating is provided on the outer surface of the shielding cover, and the first shielding coating is electrically connected to the plurality of second conductive layers; A circuit board is manufactured according to the designed circuit, and holes are punched on the circuit board according to the positions of the pads, and a second shielding coating is manufactured in the area enclosed by the multiple openings on the lower surface of the mainboard; Insert the multiple end pins of the shielding cover into the openings one by one and fix them, microwave weld the first conductive layer and the pads accordingly, and electrically connect the second conductive layer and the second shielding coating layer.