A method and system for controlling the detection fluency of a magnetic memory detector

Abstract

The present invention relates to the field of detection and control of magnetic memory detectors, and discloses a detection fluency control method and system of magnetic memory detectors, comprising the following steps: performing sufficient detection preparation work on the magnetic memory detector so that it can perform defect detection on metal block samples with known defect states, and analyzing and controlling the detection accuracy and fluency of the magnetic memory detector during the defect detection process to obtain a qualified magnetic memory detector. The present invention can detect metal block samples with known defect states through the magnetic memory detector, and infer the detection accuracy and fluency of the magnetic memory detector, thereby achieving the purpose of regulating the magnetic memory detector and significantly improving the efficiency of the magnetic memory detector during the detection process.

Description

Technical Field

[0001] The invention relates to the field of detection and regulation of magnetic memory detectors, in particular to a detection fluency regulation method and system of magnetic memory detectors. Background Art

[0002] The magnetic memory detector is a non-destructive testing device based on the principle of magnetic memory detection, which is mainly used to detect surface and near-surface defects in metal structural parts. This detection technology uses the magnetic properties of magnetic materials to identify defects in metal structural parts through changes in magnetic field distribution. Among them, the detection technology is mainly based on the magnetic memory effect of magnetic properties. Specifically, when a structure such as a metal block is in a magnetic field environment and is subjected to a working load, a magnetic domain organization with magnetostrictive properties will be oriented and irreversibly reoriented inside it. This change is particularly significant in the stress and deformation concentration area, resulting in a change in the maximum leakage magnetic field Hp. This irreversible change in the magnetic state remains after the working load is eliminated, so the stress concentration area of ​​the workpiece, that is, the defect location, can be inferred by detecting the change in the leakage magnetic field. During the operation of the magnetic memory detector, if its detection fluency is insufficient, it will affect the detection effect. For example, the inferred stress concentration area of ​​the workpiece may be wrong or the inference time may be delayed, which is not conducive to defect location of the workpiece and affects the time for defect correction. Therefore, it is necessary to analyze and regulate the detection fluency of the magnetic memory detector. Summary of the invention

[0003] The present invention overcomes the deficiencies of the prior art and provides a method and system for regulating the detection fluency of a magnetic memory detector.

[0004] In order to achieve the above object, the technical solution adopted by the present invention is:

[0005] The first aspect of the present invention provides a method for regulating the detection fluency of a magnetic memory detector, comprising the following steps:

[0006] Conduct equipment inspection preparation effect verification on the target magnetic memory detector, and based on the equipment inspection preparation effect verification result, conduct equipment calibration on the target magnetic memory detector to obtain a qualified magnetic memory detector;

[0007] Obtain a metal block sample with a known defect state, and preset a reference detection parameter of a qualified magnetic memory detector according to the defect state of the metal block sample with a known defect state;

[0008] Performing defect detection on a target metal block sample by using a type of magnetic memory detector, verifying the accuracy of the defect detection result, and finally adjusting the type of magnetic memory detector based on the accuracy of the defect detection result;

[0009] The detection fluency of a class of qualified magnetic memory detectors is analyzed, and based on the detection fluency analysis results, the detection fluency of a class of qualified stimuli and detectors is regulated and optimized.

[0010] Further, in a preferred embodiment of the present invention, the target magnetic memory detector is subjected to equipment inspection preparation effect verification, and based on the equipment inspection preparation effect verification result, the target magnetic memory detector is subjected to equipment calibration to obtain a qualified magnetic memory detector, specifically:

[0011] The magnetic memory detector that needs to be analyzed for fluency is calibrated as a target magnetic memory detector, and the target magnetic memory detector is checked for a valid certificate. If the valid period of use on the valid certificate of the target magnetic memory detector is greater than the actual period of use of the target stimulus and the detector, the target magnetic memory detector is calibrated as a magnetic memory detector with a qualified period of use;

[0012] Obtaining a power supply battery of the qualified magnetic memory detector with a time limit, calibrating it as a target power supply battery, obtaining the instruction manual of the target power supply battery, and based on the instruction manual of the target power supply battery, obtaining a minimum battery power threshold that can keep the qualified magnetic memory detector with a time limit in a working state, calibrating it as the target battery power threshold;

[0013] Calculate the real-time battery power of the target power supply battery, and determine whether the real-time battery power of the target power supply battery is within the target battery power threshold. If not, it is necessary to charge the target power supply battery in the qualified magnetic memory detector to maintain the real-time battery power of the target power supply battery within the target battery power threshold, obtain a power supply battery with qualified power, and calibrate the qualified magnetic memory detector with qualified power supply battery as a qualified magnetic memory detector.

[0014] Furthermore, in a preferred embodiment of the present invention, the metal block sample with known defect state is obtained, and the reference detection parameters of the qualified magnetic memory detector are preset according to the defect state of the metal block sample with known defect state, specifically:

[0015] Obtaining a metal block sample with a known defect state and calibrating it as a target metal block sample, wherein the defect state of the target metal block sample includes defect size, defect type and defect position;

[0016] A position where a qualified magnetic memory detector performs defect scanning on a target metal block sample is preset and calibrated as a scanning area. A magnetic field generating device is installed in the scanning area. A constant magnetic field is applied to the surface of the target metal block sample by the magnetic field generating device in the scanning area to obtain a target magnetized metal block sample.

[0017] Based on the defect state of the target metal block sample, the standard position of the magnetic trace is determined and marked on the surface of the target magnetized metal block sample, calibrated as the standard magnetic trace position, and the real-time magnetic field intensity and magnetic field intensity change time of the surface of the target magnetized metal block sample are recorded at the same time;

[0018] Obtain the instruction manual of a qualified magnetic memory detector, and obtain a comparison table of the magnetic field acquisition intensity and the magnetic field intensity of the qualified magnetic memory detector from the instruction manual of the qualified magnetic memory detector, and calibrate it as a target comparison table;

[0019] Based on the target comparison table, the magnetic field acquisition intensity of the qualified magnetic memory detector corresponding to the real-time magnetic field intensity on the surface of the target magnetized metal block sample is selected and calibrated as the target real-time magnetic field acquisition intensity, and the magnetic field intensity change time on the surface of the target magnetized metal block sample is calibrated as the target detection time;

[0020] The target detection time and the target real-time magnetic field acquisition intensity are calibrated as the benchmark detection parameters of the qualified magnetic memory detector, and the detection parameters are set as the benchmark detection parameters in the qualified magnetic memory detector to obtain a class of magnetic memory detectors;

[0021] Among them, the method for setting the detection parameters in the qualified magnetic memory detector to the benchmark detection parameters is to set the working time of the qualified magnetic memory detector to the target detection time in the qualified magnetic memory detector, and set the real-time magnetic field acquisition intensity of the qualified magnetic memory detector to the target real-time magnetic field acquisition intensity within the target detection time.

[0022] Furthermore, in a preferred embodiment of the present invention, the target metal block sample is subjected to defect detection by a type of magnetic memory detector, and the accuracy of the defect detection result is verified, and finally the type of magnetic memory detector is adjusted based on the accuracy of the defect detection result, specifically:

[0023] In the scanning area, a magnetic field generating device is used to apply a constant magnetic field to the surface of the target metal block sample again to obtain a secondary magnetized metal block sample, and a magnetic memory detector is operated in the scanning area at the same time;

[0024] The operation of the first-class magnetic memory detector is to determine a scanning origin on the secondary magnetized metal block sample, and to perform a surface scan on the secondary magnetized metal block sample by running the first-class magnetic memory detector with the scanning origin as the starting point, and during the surface scanning process, record the magnetic field strength at different positions on the surface of the secondary magnetized metal block sample obtained by the first-class magnetic memory detector;

[0025] After running a type of magnetic memory detector, the magnetic field strength at different positions on the surface of the secondary magnetized metal block sample calculated by the type of magnetic memory detector is analyzed, and the coordinates of the corresponding positions on the surface of all secondary magnetized metal block samples whose magnetic field strength is not within a preset threshold are obtained to generate a detection magnetic trace position;

[0026] Calculate the overlap rate between the detected magnetic trace position and the standard magnetic trace position, mark it as the magnetic trace overlap rate, preset the magnetic trace overlap rate standard threshold, and if the magnetic trace overlap rate is maintained within the magnetic trace overlap rate standard threshold, mark the first type of magnetic memory detector as a first type of qualified magnetic memory detector;

[0027] If the magnetic trace coincidence rate is not maintained within the standard threshold value of the magnetic trace coincidence rate, an external magnetic field interference shielding device is installed in the scanning area, and the external magnetic field interference shielding device is operated in the scanning area during the operation of the first-class magnetic memory detector;

[0028] If the magnetic trace overlap rate is still not maintained within the standard threshold value of the magnetic trace overlap rate when the external magnetic field interference shielding equipment is running, a class of qualified magnetic memory detectors will be calibrated as a class of unqualified magnetic memory detectors, and the sensor used to scan the secondary magnetized metal block sample in the class of unqualified magnetic memory detectors will be obtained and calibrated as a magnetic memory detection sensor, and the magnetic memory sensor will be replaced so that the magnetic trace overlap rate obtained based on the class of unqualified magnetic memory detectors is maintained within the standard threshold value of the magnetic trace overlap rate, and a class of qualified magnetic memory detectors will be obtained.

[0029] Furthermore, in a preferred embodiment of the present invention, the detection fluency of a class of qualified magnetic memory detectors is analyzed, and based on the detection fluency analysis results, the detection fluency of a class of qualified stimuli and detectors is regulated and optimized, specifically:

[0030] When a qualified magnetic memory detector is running, the real-time coverage degree corresponding to the qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is calculated, and the standard coverage degree threshold corresponding to the qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is preset;

[0031] Determine whether the real-time coverage of a qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is maintained within the standard coverage threshold, and if so, calibrate the qualified magnetic memory detector as a magnetic memory detector with qualified detection fluency;

[0032] If not, the first-class qualified magnetic memory detector is calibrated as a second-class magnetic memory detector, and the points of the corresponding secondary magnetized metal blocks whose real-time coverage degree does not maintain the standard coverage degree are calibrated as scanning coverage abnormal points;

[0033] Based on all the abnormal points covered by the scanning, the defects of the Class II magnetic memory detector are traced, and the detection fluency of the Class II magnetic memory detector is regulated and optimized based on the defect tracing results.

[0034] Further, in a preferred embodiment of the present invention, the defect tracing of the second-class magnetic memory detector is performed based on all the scan coverage abnormal points, and the detection fluency control optimization of the second-class magnetic memory detector is performed based on the defect tracing results, specifically:

[0035] When the second-class magnetic memory detector scans the secondary magnetized metal block, whether the real-time detection parameter of the second-class magnetic memory detector is equal to the reference detection parameter when the scanning covers the abnormal point;

[0036] Among them, the method for judging whether the real-time detection parameter of the second-class magnetic memory detector is equal to the reference detection parameter is to judge whether the real-time magnetic field acquisition intensity of the second-class magnetic memory detector is equal to the target real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans to the abnormal point covered by the scan;

[0037] If not, the real-time magnetic field acquisition intensity is intelligently controlled in the second-class magnetic memory detector so that the real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans all points on the secondary magnetized metal block is equal to the target magnetic field acquisition intensity;

[0038] If the real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans all points on the secondary magnetized metal block is equal to the target magnetic field acquisition intensity, but there are still abnormal scanning coverage points, the detection time in the real-time detection parameters of the second-class magnetic memory detector is adjusted in real time to make the second-class magnetic memory detector scan all points on the secondary magnetized metal block so that there are no abnormal scanning coverage points, and a magnetic memory detector with qualified detection fluency is obtained.

[0039] The second aspect of the present invention further provides a detection fluency control system for a magnetic memory detector, the detection fluency control system comprising a memory and a processor, the memory storing a detection fluency control method, and when the detection fluency control method is executed by the processor, the following steps are implemented:

[0040] Conduct equipment inspection preparation effect verification on the target magnetic memory detector, and based on the equipment inspection preparation effect verification result, conduct equipment calibration on the target magnetic memory detector to obtain a qualified magnetic memory detector;

[0041] Obtain a metal block sample with a known defect state, and preset a reference detection parameter of a qualified magnetic memory detector according to the defect state of the metal block sample with a known defect state;

[0042] Performing defect detection on a target metal block sample by using a type of magnetic memory detector, verifying the accuracy of the defect detection result, and finally adjusting the type of magnetic memory detector based on the accuracy of the defect detection result;

[0043] The detection fluency of a class of qualified magnetic memory detectors is analyzed, and based on the detection fluency analysis results, the detection fluency of a class of qualified stimuli and detectors is regulated and optimized.

[0044] The present invention solves the technical defects existing in the background technology, and the present invention has the following beneficial effects: sufficient preparation for detection is performed on the magnetic memory detector, so that it can perform defect detection on metal block samples with known defect states, and the detection accuracy and fluency of the magnetic memory detector are analyzed and regulated during the defect detection process to obtain a qualified magnetic memory detector. The present invention can detect metal block samples with known defect states through the magnetic memory detector, and infer the detection accuracy and fluency of the magnetic memory detector, thereby achieving the purpose of regulating the magnetic memory detector and significantly improving the efficiency of the magnetic memory detector during the detection process. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, drawings of other embodiments can be obtained based on these drawings without paying creative work.

[0046] Figure 1 A flow chart showing a method for regulating detection fluency of a magnetic memory detector is shown;

[0047] Figure 2 A flow chart of a method for analyzing and optimizing the detection fluency of a class of qualified magnetic memory detectors is shown;

[0048] Figure 3 A program view of a detection fluency control system of a magnetic memory detector is shown. DETAILED DESCRIPTION

[0049] In order to more clearly understand the above-mentioned purpose, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0050] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0051] Figure 1 A flow chart of a method for regulating the detection fluency of a magnetic memory detector is shown, comprising the following steps:

[0052] S102: performing equipment inspection preparation effect verification on the target magnetic memory detector, and based on the equipment inspection preparation effect verification result, performing equipment calibration on the target magnetic memory detector to obtain a qualified magnetic memory detector;

[0053] S104: obtaining a metal block sample with a known defect state, and presetting a reference detection parameter of a qualified magnetic memory detector according to the defect state of the metal block sample with a known defect state;

[0054] S106: performing defect detection on the target metal block sample by using a type-one magnetic memory detector, and verifying the accuracy of the defect detection result, and finally adjusting the type-one magnetic memory detector based on the accuracy of the defect detection result;

[0055] S108: Analyze the detection fluency of a class of qualified magnetic memory detectors, and regulate and optimize the detection fluency of a class of qualified stimuli and detectors based on the detection fluency analysis results.

[0056] Further, in a preferred embodiment of the present invention, the target magnetic memory detector is subjected to equipment inspection preparation effect verification, and based on the equipment inspection preparation effect verification result, the target magnetic memory detector is subjected to equipment calibration to obtain a qualified magnetic memory detector, specifically:

[0057] The magnetic memory detector that needs to be analyzed for fluency is calibrated as a target magnetic memory detector, and the target magnetic memory detector is checked for a valid certificate. If the valid period of use on the valid certificate of the target magnetic memory detector is greater than the actual period of use of the target stimulus and the detector, the target magnetic memory detector is calibrated as a magnetic memory detector with a qualified period of use;

[0058] Obtaining a power supply battery of the qualified magnetic memory detector with a time limit, calibrating it as a target power supply battery, obtaining the instruction manual of the target power supply battery, and based on the instruction manual of the target power supply battery, obtaining a minimum battery power threshold that can keep the qualified magnetic memory detector with a time limit in a working state, calibrating it as the target battery power threshold;

[0059] Calculate the real-time battery power of the target power supply battery, and determine whether the real-time battery power of the target power supply battery is within the target battery power threshold. If not, it is necessary to charge the target power supply battery in the qualified magnetic memory detector to maintain the real-time battery power of the target power supply battery within the target battery power threshold, obtain a power supply battery with qualified power, and calibrate the qualified magnetic memory detector with qualified power supply battery as a qualified magnetic memory detector.

[0060] It should be noted that the magnetic memory detector is a non-destructive testing equipment based on the principle of magnetic memory detection, which is mainly used to detect surface and near-surface defects in metal structural parts. This detection technology uses the magnetic properties of magnetic materials to identify defects in metal structural parts through changes in magnetic field distribution. Before the magnetic memory detector is operated, it is necessary to ensure that the preparation conditions of the magnetic memory detector are sufficient to prevent abnormalities during operation that may cause the inability to perform magnetic memory detection or affect the smoothness of magnetic memory detection. First, it is necessary to ensure that the magnetic memory detector is within the validity period. Magnetic memory detectors that are not within the validity period will have detection deviations during use, because expired magnetic memory detectors will have magnetic degradation and other phenomena. After determining the validity period, it is necessary to analyze the battery power of the magnetic memory detector. If the battery power is insufficient, it is easy to suddenly shut down during the detection period, affecting the detection effect. And the power supply battery needs to be reliably grounded to prevent leakage and other situations.

[0061] Furthermore, in a preferred embodiment of the present invention, the metal block sample with known defect state is obtained, and the reference detection parameters of the qualified magnetic memory detector are preset according to the defect state of the metal block sample with known defect state, specifically:

[0062] Obtaining a metal block sample with a known defect state and calibrating it as a target metal block sample, wherein the defect state of the target metal block sample includes defect size, defect type and defect position;

[0063] A position where a qualified magnetic memory detector performs defect scanning on a target metal block sample is preset and calibrated as a scanning area. A magnetic field generating device is installed in the scanning area. A constant magnetic field is applied to the surface of the target metal block sample by the magnetic field generating device in the scanning area to obtain a target magnetized metal block sample.

[0064] Based on the defect state of the target metal block sample, the standard position of the magnetic trace is determined and marked on the surface of the target magnetized metal block sample, calibrated as the standard magnetic trace position, and the real-time magnetic field intensity and magnetic field intensity change time of the surface of the target magnetized metal block sample are recorded at the same time;

[0065] Obtain the instruction manual of a qualified magnetic memory detector, and obtain a comparison table of the magnetic field acquisition intensity and the magnetic field intensity of the qualified magnetic memory detector from the instruction manual of the qualified magnetic memory detector, and calibrate it as a target comparison table;

[0066] Based on the target comparison table, the magnetic field acquisition intensity of the qualified magnetic memory detector corresponding to the real-time magnetic field intensity on the surface of the target magnetized metal block sample is selected and calibrated as the target real-time magnetic field acquisition intensity, and the magnetic field intensity change time on the surface of the target magnetized metal block sample is calibrated as the target detection time;

[0067] The target detection time and the target real-time magnetic field acquisition intensity are calibrated as the benchmark detection parameters of the qualified magnetic memory detector, and the detection parameters are set as the benchmark detection parameters in the qualified magnetic memory detector to obtain a class of magnetic memory detectors;

[0068] Among them, the method for setting the detection parameters in the qualified magnetic memory detector to the benchmark detection parameters is to set the working time of the qualified magnetic memory detector to the target detection time in the qualified magnetic memory detector, and set the real-time magnetic field acquisition intensity of the qualified magnetic memory detector to the target real-time magnetic field acquisition intensity within the target detection time.

[0069] It should be noted that before testing the detection fluency of the magnetic memory detector, it is necessary to evaluate the detection accuracy of the magnetic memory detector. If there is a problem with the accuracy of the magnetic memory detector, its fluency will also be relatively affected. Since the magnetic memory detector is a device for non-destructive surface defect detection of metal structures, a metal block with a known defect state can be used, and the metal block with a known defect state can be detected by the magnetic memory detector. By comparing the known defect state with the defect state obtained by the detection, the detection accuracy of the magnetic memory detector can be judged. The reason for applying a constant magnetic field to the metal block sample is that when the magnetic field meets the area where there are defects (such as cracks, fatigue, corrosion, deformation, etc.) inside the metal block, the magnetic field will change. The defect area will affect the distribution of the magnetic field, thereby forming a specific magnetic pole change on the surface of the metal block, that is, a magnetic mark. The position of the magnetic mark represents the defect position of the metal block. At the same time, the magnetic field applied to the surface of the metal block is a decaying magnetic field, and it will not always be maintained on the surface of the metal block at a high intensity, but will slowly reduce the intensity of the magnetization of the metal block. In the process of collecting the magnetic field changes on the surface of metal blocks with different magnetic field strengths, the intensity of the collection in the magnetic memory detector is different, that is, the magnetic field collection intensity is different. The magnetic field intensity on the surface of the metal block is relatively high, and the corresponding magnetic field collection intensity of the magnetic memory detector is also relatively high, and it is necessary to maintain a balanced state to ensure the accuracy of the collection. Since the magnetic field intensity on the surface of the metal block changes and the environment in the scanning area is constant, the time of the change of the magnetic field intensity on the surface of the metal block is constant, and the magnetic field intensity change time is obtained, and the real-time magnetization degree of the surface of the metal block is detected in real time. The collection intensity of the magnetic field on the magnetic memory detector is in a one-to-one correspondence with the magnetic field intensity on the surface of the metal block, so a comparison table is obtained to determine the corresponding magnetic field collection intensity required for the real-time magnetic field intensity on the surface of the metal block, and a benchmark detection parameter is generated within the target detection time to obtain a type of magnetic memory detector.

[0070] Furthermore, in a preferred embodiment of the present invention, the target metal block sample is subjected to defect detection by a type of magnetic memory detector, and the accuracy of the defect detection result is verified, and finally the type of magnetic memory detector is adjusted based on the accuracy of the defect detection result, specifically:

[0071] In the scanning area, a magnetic field generating device is used to apply a constant magnetic field to the surface of the target metal block sample again to obtain a secondary magnetized metal block sample, and a magnetic memory detector is operated in the scanning area at the same time;

[0072] The operation of the first-class magnetic memory detector is to determine a scanning origin on the secondary magnetized metal block sample, and to perform a surface scan on the secondary magnetized metal block sample by running the first-class magnetic memory detector with the scanning origin as the starting point, and during the surface scanning process, record the magnetic field strength at different positions on the surface of the secondary magnetized metal block sample obtained by the first-class magnetic memory detector;

[0073] After running a type of magnetic memory detector, the magnetic field strength at different positions on the surface of the secondary magnetized metal block sample calculated by the type of magnetic memory detector is analyzed, and the coordinates of the corresponding positions on the surface of all secondary magnetized metal block samples whose magnetic field strength is not within a preset threshold are obtained to generate a detection magnetic trace position;

[0074] Calculate the overlap rate between the detected magnetic trace position and the standard magnetic trace position, mark it as the magnetic trace overlap rate, preset the magnetic trace overlap rate standard threshold, and if the magnetic trace overlap rate is maintained within the magnetic trace overlap rate standard threshold, mark the first type of magnetic memory detector as a first type of qualified magnetic memory detector;

[0075] If the magnetic trace coincidence rate is not maintained within the standard threshold value of the magnetic trace coincidence rate, an external magnetic field interference shielding device is installed in the scanning area, and the external magnetic field interference shielding device is operated in the scanning area during the operation of the first-class magnetic memory detector;

[0076] If the magnetic trace overlap rate is still not maintained within the standard threshold value of the magnetic trace overlap rate when the external magnetic field interference shielding equipment is running, a class of qualified magnetic memory detectors will be calibrated as a class of unqualified magnetic memory detectors, and the sensor used to scan the secondary magnetized metal block sample in the class of unqualified magnetic memory detectors will be obtained and calibrated as a magnetic memory detection sensor, and the magnetic memory sensor will be replaced so that the magnetic trace overlap rate obtained based on the class of unqualified magnetic memory detectors is maintained within the standard threshold value of the magnetic trace overlap rate, and a class of qualified magnetic memory detectors will be obtained.

[0077] It should be noted that before the magnetic memory detector is analyzed and regulated for detection fluency, it is necessary to analyze the detection accuracy of the magnetic memory detector in order to ensure the detection accuracy of the magnetic memory detector. The detection accuracy of the magnetic memory detector can be achieved by using the magnetic memory detector to perform magnetization analysis on the metal block sample, and to perform coincidence analysis on the detected magnetic trace position and the standard position of the magnetic trace to achieve accuracy detection. Before analysis by the magnetic memory detector, the metal block sample needs to be re-magnetized, because the magnetic field on the metal block sample will decay, and re-magnetization is required to ensure the consistency of the test. After the metal block sample is re-magnetized, a scanning origin is determined on the metal block sample, and the magnetic memory detector is controlled to use the scanning origin as the starting point to perform magnetic memory detection on the metal block sample, and the magnetic field strength at different points on the surface of the metal block sample is recorded in real time during the detection process. The magnetic field strength at different points on the metal block sample obtained by the detection is analyzed, and the position where the magnetic field strength is significantly smaller, that is, the position that is not within the preset threshold, can be calibrated as the detection magnetic trace position. The size of the overlap rate between the detected magnetic trace position and the standard magnetic trace position represents the detection accuracy of the magnetic memory detector. The greater the overlap rate, the higher the detection accuracy. If the overlap rate of the magnetic trace is greater than the preset value, it proves that the detection accuracy of the magnetic memory detector is qualified, and a qualified magnetic memory detector is obtained. If the overlap rate of the magnetic trace is less than the preset value, it is necessary to improve the accuracy of the magnetic memory detection. Since the metal block for magnetic memory detection has been magnetized historically, and there may be magnetic field interference from the outside, the magnetic field on the surface of the metal block may be disordered, affecting the accuracy of the detection result, so the external magnetic field is filtered out through the external magnetic field interference shielding device, so that the magnetic field only exists on the surface of the metal block during the detection period. If the magnetic trace overlap rate is still not maintained within the standard threshold of the magnetic trace overlap rate when the external magnetic field interference shielding device is running, it is judged that the abnormal accuracy of the detection result is caused by the detector, and the detection sensor of the detector needs to be replaced to achieve the purpose of the overlap rate of the magnetic trace being greater than the preset value.

[0078] Figure 2 A flow chart of a method for analyzing and optimizing the detection fluency of a class of qualified magnetic memory detectors is shown, comprising the following steps:

[0079] S202: Calculating the real-time coverage degree corresponding to a qualified magnetic memory detector when scanning different points on the secondary magnetized metal block, and determining the scanning coverage abnormal point based on the real-time coverage degree;

[0080] S204: Based on all the abnormal points covered by the scanning, the defects of the Class II magnetic memory detector are traced, and the detection fluency of the Class II magnetic memory detector is regulated and optimized based on the defect tracing results.

[0081] Furthermore, in a preferred embodiment of the present invention, the detection fluency of a class of qualified magnetic memory detectors is analyzed, and based on the detection fluency analysis results, the detection fluency of a class of qualified stimuli and detectors is regulated and optimized, specifically:

[0082] When a qualified magnetic memory detector is running, the real-time coverage degree corresponding to the qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is calculated, and the standard coverage degree threshold corresponding to the qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is preset;

[0083] Determine whether the real-time coverage of a qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is maintained within the standard coverage threshold, and if so, calibrate the qualified magnetic memory detector as a magnetic memory detector with qualified detection fluency;

[0084] If not, the first-class qualified magnetic memory detector is calibrated as a second-class magnetic memory detector, and the points of the corresponding secondary magnetized metal blocks whose real-time coverage degree does not maintain the standard coverage degree are calibrated as scanning coverage abnormal points.

[0085] It should be noted that after determining the detection accuracy of the magnetic memory detector, it is necessary to analyze and regulate the detection fluency of the magnetic memory detector. For the analysis of detection fluency, it can be determined by calculating the coverage of the scan after a single scan of the metal block. The greater the coverage of a single scan, the more it proves that there is no obstacle during the scan, which proves that the detection fluency is greater. After scanning to different points, the magnetic memory detector has a coverage threshold. For example, when scanning to a certain point, the current coverage may be 50%, and if the coverage obtained by the detection is only 40%, it proves that there is insufficient fluency in the detection process. If the real-time coverage of all points is maintained within the standard threshold, a magnetic memory detector with qualified detection fluency is obtained. Otherwise, it is necessary to trace and repair the detection fluency defects of the second-class memory detector, and at the same time, the points that cannot be covered need to be calibrated as abnormal scanning coverage points.

[0086] Further, in a preferred embodiment of the present invention, the defect tracing of the second-class magnetic memory detector is performed based on all the scan coverage abnormal points, and the detection fluency control optimization of the second-class magnetic memory detector is performed based on the defect tracing results, specifically:

[0087] When the second-class magnetic memory detector scans the secondary magnetized metal block, whether the real-time detection parameter of the second-class magnetic memory detector is equal to the reference detection parameter when the scanning covers the abnormal point;

[0088] Among them, the method for judging whether the real-time detection parameter of the second-class magnetic memory detector is equal to the reference detection parameter is to judge whether the real-time magnetic field acquisition intensity of the second-class magnetic memory detector is equal to the target real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans to the abnormal point covered by the scan;

[0089] If not, the real-time magnetic field acquisition intensity is intelligently controlled in the second-class magnetic memory detector so that the real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans all points on the secondary magnetized metal block is equal to the target magnetic field acquisition intensity;

[0090] If the real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans all points on the secondary magnetized metal block is equal to the target magnetic field acquisition intensity, but there are still abnormal scanning coverage points, the detection time in the real-time detection parameters of the second-class magnetic memory detector is adjusted in real time to make the second-class magnetic memory detector scan all points on the secondary magnetized metal block so that there are no abnormal scanning coverage points, and a magnetic memory detector with qualified detection fluency is obtained.

[0091] It should be noted that the reason for the occurrence of abnormal scanning coverage points can be determined by testing whether the real-time detection parameters generated by the second-class secondary memory detector when scanning the secondary magnetized metal block are equal to the benchmark detection parameters, that is, whether the real-time magnetic field acquisition intensity is maintained equal to the target real-time magnetic field acquisition intensity. If not, it is proved that the scanning coverage may be low due to the real-time magnetic field acquisition intensity, resulting in abnormal scanning coverage points. The real-time magnetic field acquisition intensity of the second-class magnetic memory detector is regulated so that the real-time magnetic field acquisition intensity when scanning all points is equal to the target magnetic field acquisition intensity. If the real-time magnetic field acquisition intensity of the second-class magnetic memory detector when scanning all points on the secondary magnetized metal block is equal to the target magnetic field acquisition intensity, but there are still abnormal scanning coverage points, it proves that there may be abnormal detection time on the second-class magnetic memory detector. For example, the time to detect a certain point is originally 1 second. If there is an abnormal detection time and it becomes 2 seconds, it will also affect the subsequent magnetic field acquisition intensity. Therefore, it is necessary to regulate the detection time to obtain a magnetic memory detector with qualified detection fluency.

[0092] like Figure 3 As shown, the second aspect of the present invention further provides a detection fluency control system of a magnetic memory detector, the detection fluency control system comprising a memory 31 and a processor 32, the memory 31 stores a detection fluency control method, and when the detection fluency control method is executed by the processor 32, the following steps are implemented:

[0093] Conduct equipment inspection preparation effect verification on the target magnetic memory detector, and based on the equipment inspection preparation effect verification result, conduct equipment calibration on the target magnetic memory detector to obtain a qualified magnetic memory detector;

[0094] Obtain a metal block sample with a known defect state, and preset a reference detection parameter of a qualified magnetic memory detector according to the defect state of the metal block sample with a known defect state;

[0095] Performing defect detection on a target metal block sample by using a type of magnetic memory detector, verifying the accuracy of the defect detection result, and finally adjusting the type of magnetic memory detector based on the accuracy of the defect detection result;

[0096] The detection fluency of a class of qualified magnetic memory detectors is analyzed, and based on the detection fluency analysis results, the detection fluency of a class of qualified stimuli and detectors is regulated and optimized.

[0097] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A method for controlling the detection fluency of a magnetic memory detector, characterized in that: The following steps are involved: Conduct equipment inspection preparation effect verification on the target magnetic memory detector, and based on the equipment inspection preparation effect verification result, conduct equipment calibration on the target magnetic memory detector to obtain a qualified magnetic memory detector; Obtain a metal block sample with a known defect state, and preset a reference detection parameter of a qualified magnetic memory detector according to the defect state of the metal block sample with a known defect state; Performing defect detection on a target metal block sample by using a type of magnetic memory detector, verifying the accuracy of the defect detection result, and finally adjusting the type of magnetic memory detector based on the accuracy of the defect detection result; Analyze the detection fluency of a class of qualified magnetic memory detectors, and adjust and optimize the detection fluency of a class of qualified magnetic memory detectors based on the detection fluency analysis results; The method of obtaining a metal block sample with a known defect state and presetting the benchmark detection parameters of a qualified magnetic memory detector according to the defect state of the metal block sample with a known defect state is specifically as follows: Obtaining a metal block sample with a known defect state and calibrating it as a target metal block sample, wherein the defect state of the target metal block sample includes defect size, defect type and defect position; A position where a qualified magnetic memory detector performs defect scanning on a target metal block sample is preset and calibrated as a scanning area. A magnetic field generating device is installed in the scanning area. A constant magnetic field is applied to the surface of the target metal block sample by the magnetic field generating device in the scanning area to obtain a target magnetized metal block sample. Based on the defect state of the target metal block sample, the standard position of the magnetic trace is determined and marked on the surface of the target magnetized metal block sample, calibrated as the standard magnetic trace position, and the real-time magnetic field intensity and magnetic field intensity change time of the surface of the target magnetized metal block sample are recorded at the same time; Obtain the instruction manual of a qualified magnetic memory detector, and obtain a comparison table of the magnetic field acquisition intensity and the magnetic field intensity of the qualified magnetic memory detector from the instruction manual of the qualified magnetic memory detector, and calibrate it as a target comparison table; Based on the target comparison table, the magnetic field acquisition intensity of the qualified magnetic memory detector corresponding to the real-time magnetic field intensity on the surface of the target magnetized metal block sample is selected and calibrated as the target real-time magnetic field acquisition intensity, and the magnetic field intensity change time on the surface of the target magnetized metal block sample is calibrated as the target detection time; The target detection time and the target real-time magnetic field acquisition intensity are calibrated as the benchmark detection parameters of the qualified magnetic memory detector, and the detection parameters are set as the benchmark detection parameters in the qualified magnetic memory detector to obtain a class of magnetic memory detectors; The method of setting the detection parameters as the reference detection parameters in the qualified magnetic memory detector is to set the working time of the qualified magnetic memory detector to the target detection time in the qualified magnetic memory detector, and to set the real-time magnetic field acquisition intensity of the qualified magnetic memory detector to the target real-time magnetic field acquisition intensity within the target detection time; Among them, the method of performing defect detection on the target metal block sample by a type of magnetic memory detector and verifying the accuracy of the defect detection result, and finally adjusting the type of magnetic memory detector based on the accuracy of the defect detection result, is specifically as follows: In the scanning area, a magnetic field generating device is used to apply a constant magnetic field to the surface of the target metal block sample again to obtain a secondary magnetized metal block sample, and a magnetic memory detector is operated in the scanning area at the same time; The operation of the first-class magnetic memory detector is to determine a scanning origin on the secondary magnetized metal block sample, and to perform a surface scan on the secondary magnetized metal block sample by running the first-class magnetic memory detector with the scanning origin as the starting point, and during the surface scanning process, record the magnetic field strength at different positions on the surface of the secondary magnetized metal block sample obtained by the first-class magnetic memory detector; After running a type of magnetic memory detector, the magnetic field strength at different positions on the surface of the secondary magnetized metal block sample calculated by the type of magnetic memory detector is analyzed, and the coordinates of the corresponding positions on the surface of all secondary magnetized metal block samples whose magnetic field strength is not within a preset threshold are obtained to generate a detection magnetic trace position; Calculate the overlap rate between the detected magnetic trace position and the standard magnetic trace position, mark it as the magnetic trace overlap rate, preset the magnetic trace overlap rate standard threshold, and if the magnetic trace overlap rate is maintained within the magnetic trace overlap rate standard threshold, mark the first type of magnetic memory detector as a first type of qualified magnetic memory detector; If the magnetic trace coincidence rate is not maintained within the standard threshold value of the magnetic trace coincidence rate, an external magnetic field interference shielding device is installed in the scanning area, and the external magnetic field interference shielding device is operated in the scanning area during the operation of the first-class magnetic memory detector; If the magnetic trace overlap rate is still not maintained within the standard threshold value of the magnetic trace overlap rate when the external magnetic field interference shielding equipment is running, a class of qualified magnetic memory detectors will be calibrated as a class of unqualified magnetic memory detectors, and the sensor used to scan the secondary magnetized metal block sample in the class of unqualified magnetic memory detectors will be obtained and calibrated as a magnetic memory detection sensor, and the magnetic memory sensor will be replaced so that the magnetic trace overlap rate obtained based on the class of unqualified magnetic memory detectors is maintained within the standard threshold value of the magnetic trace overlap rate, and a class of qualified magnetic memory detectors will be obtained.

2. A method for controlling the detection fluency of a magnetic memory detector according to claim 1, characterized in that: The target magnetic memory detector is subjected to equipment inspection preparation effect verification, and based on the equipment inspection preparation effect verification result, the target magnetic memory detector is subjected to equipment calibration to obtain a qualified magnetic memory detector, specifically: The magnetic memory detector that needs to be analyzed for fluency is calibrated as a target magnetic memory detector, and the target magnetic memory detector is checked for a valid certificate. If the valid period of use on the valid certificate of the target magnetic memory detector is greater than the actual period of use of the target magnetic memory detector, the target magnetic memory detector is calibrated as a magnetic memory detector with a qualified period of use; Obtaining a power supply battery of the qualified magnetic memory detector with a time limit, calibrating it as a target power supply battery, obtaining the instruction manual of the target power supply battery, and based on the instruction manual of the target power supply battery, obtaining a minimum battery power threshold that can keep the qualified magnetic memory detector with a time limit in a working state, calibrating it as the target battery power threshold; Calculate the real-time battery power of the target power supply battery, and determine whether the real-time battery power of the target power supply battery is within the target battery power threshold. If not, it is necessary to charge the target power supply battery in the qualified magnetic memory detector to maintain the real-time battery power of the target power supply battery within the target battery power threshold, and obtain a power supply battery with qualified power. The qualified magnetic memory detector with qualified power supply battery is calibrated as a qualified magnetic memory detector.

3. The method for controlling the detection fluency of a magnetic memory detector according to claim 1, characterized in that: The method of analyzing the detection fluency of a class of qualified magnetic memory detectors and adjusting and optimizing the detection fluency of a class of qualified magnetic memory detectors based on the detection fluency analysis results is specifically as follows: When a qualified magnetic memory detector is running, the real-time coverage degree corresponding to the qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is calculated, and the standard coverage degree threshold corresponding to the qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is preset; Determine whether the real-time coverage of a qualified magnetic memory detector when scanning different points on the secondary magnetized metal block is maintained within the standard coverage threshold, and if so, calibrate the qualified magnetic memory detector as a magnetic memory detector with qualified detection fluency; If not, the first-class qualified magnetic memory detector is calibrated as a second-class magnetic memory detector, and the points of the corresponding secondary magnetized metal blocks whose real-time coverage degree does not maintain the standard coverage degree are calibrated as scanning coverage abnormal points; Based on all the abnormal points covered by the scanning, the defects of the Class II magnetic memory detector are traced, and the detection fluency of the Class II magnetic memory detector is regulated and optimized based on the defect tracing results.

4. A method for controlling the detection fluency of a magnetic memory detector according to claim 3, characterized in that: Based on all the scan coverage abnormal points, the defect source tracing is performed on the Class II magnetic memory detector, and the detection fluency control and optimization of the Class II magnetic memory detector is performed based on the defect source tracing results, specifically: When the second-class magnetic memory detector scans the secondary magnetized metal block, whether the real-time detection parameter of the second-class magnetic memory detector is equal to the reference detection parameter when the scanning covers the abnormal point; Among them, the method for judging whether the real-time detection parameter of the second-class magnetic memory detector is equal to the reference detection parameter is to judge whether the real-time magnetic field acquisition intensity of the second-class magnetic memory detector is equal to the target real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans to the abnormal point covered by the scan; If not, the real-time magnetic field acquisition intensity is intelligently controlled in the second-class magnetic memory detector so that the real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans all points on the secondary magnetized metal block is equal to the target magnetic field acquisition intensity; If the real-time magnetic field acquisition intensity when the second-class magnetic memory detector scans all points on the secondary magnetized metal block is equal to the target magnetic field acquisition intensity, but there are still abnormal scanning coverage points, the detection time in the real-time detection parameters of the second-class magnetic memory detector is adjusted in real time to make the second-class magnetic memory detector scan all points on the secondary magnetized metal block so that there are no abnormal scanning coverage points, and a magnetic memory detector with qualified detection fluency is obtained.

5. A detection fluency control system for a magnetic memory detector, characterized in that: The detection fluency control system includes a memory and a processor, wherein a detection fluency control method program is stored in the memory. When the detection fluency control method program is executed by the processor, the detection fluency control method steps as described in any one of claims 1 to 4 are implemented.

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