Semiconductor laser beam combining device

Abstract

The present invention provides a semiconductor laser beam combining device, comprising: a semiconductor laser chip group, a fast axis collimator group, a characteristic slow axis collimator group and an oblique angle reflection prism group; the semiconductor laser chip group comprises a plurality of semiconductor laser chips with the same height in the fast axis direction; the fast axis collimator group comprises a plurality of fast axis collimators; the characteristic slow axis collimator group comprises a plurality of characteristic slow axis collimators; the oblique angle reflection prism group comprises a plurality of oblique angle reflection prisms. The semiconductor laser beam combining device can achieve high reliability and small size.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor laser beam combining device. Background Art

[0002] With the continuous development of science and technology, semiconductor lasers have been widely used in laser material processing, laser information processing, laser biology and medicine, laser printing, communications, laser chemistry, laser detection and measurement, and national defense security.

[0003] Semiconductor lasers have significant advantages in terms of efficiency, volume, lifespan, and integration, and have great application prospects in industrial and military fields. However, semiconductor lasers often have problems such as low power, large divergence angle, and poor beam quality, which cannot meet the needs of civil, industrial, and military fields. Therefore, many beam combining methods are aimed at improving the beam quality, divergence angle, and brightness of the output light of the beam combining module. At present, most semiconductor laser beam combining modules based on single-tube chips adopt a stepped structure, with the chips at different heights in the fast axis direction. This structure has extremely high requirements for parallelism and step spacing in mechanical processing, and also has the disadvantage of uneven heat dissipation, resulting in poor overall reliability of semiconductor laser beam combining modules. Summary of the invention

[0004] Therefore, the technical problem to be solved by the present invention is how to achieve high reliability and small size, thereby providing a semiconductor laser beam combining device.

[0005] The invention provides a semiconductor laser beam combining device, comprising a semiconductor laser chip group, comprising a plurality of semiconductor laser chips arranged in a first direction and having the same height in a fast axis direction, wherein the first direction intersects with the fast axis direction; a fast axis collimator group, comprising a plurality of fast axis collimators, wherein the fast axis collimators are located on a side of the semiconductor laser chip in the opposite direction of light output; a characteristic slow axis collimator group, comprising a plurality of characteristic slow axis collimators, wherein the characteristic slow axis collimators are located on a side of the fast axis collimator away from the semiconductor laser chip in the opposite direction of light output, wherein the characteristic slow axis collimators are used to collimate a light beam in the slow axis direction and adjust the height of the light beam in the fast axis direction; a characteristic reflection prism group, comprising a plurality of characteristic reflection prisms, wherein the characteristic reflection prisms are located on a side of the characteristic slow axis collimator away from the fast axis collimator; the characteristic reflection prism is used to redirect the slow axis direction of the light beam from the characteristic slow axis collimator, and different characteristic reflection prisms in the characteristic reflection prism group are used to adjust the light beam to have different heights in the fast axis direction.

[0006] Optionally, there are multiple semiconductor laser chip groups, and the multiple semiconductor laser chip groups are respectively a first semiconductor laser chip group and a second semiconductor laser chip group; there are multiple fast-axis collimator groups, and the multiple fast-axis collimator groups are respectively a first fast-axis collimator group and a second fast-axis collimator group; there are multiple characteristic slow-axis collimator groups, and the multiple characteristic slow-axis collimator groups are respectively a first characteristic slow-axis collimator group and a second characteristic slow-axis collimator group; there are multiple characteristic reflection prism groups, and the multiple characteristic reflection prism groups are respectively a first characteristic reflection prism group and a second characteristic reflection prism group; wherein, the first fast-axis collimator group is located on the side of the first semiconductor laser chip group in the opposite direction of light output, and the second fast-axis collimator group is located on the side of the second semiconductor laser chip group in the opposite direction of light output; the first characteristic slow-axis collimator group is located The first fast-axis collimator group is located on a side away from the first semiconductor laser chip group, and the second characteristic slow-axis collimator group is located on a side of the second fast-axis collimator group away from the second semiconductor laser chip group; the first characteristic reflection prism group is located on a side of the first characteristic slow-axis collimator group away from the first fast-axis collimator group, and the second characteristic reflection prism group is located on a side of the second characteristic slow-axis collimator group away from the second fast-axis collimator group; the semiconductor laser beam combining device also includes: a reflector; a half-wave plate; a polarization beam combiner; a coupling mirror; the half-wave plate is located between the reflector and the polarization beam combiner; the reflector is used to reflect the light emitted by the first characteristic reflection prism group to the half-wave plate; the polarization beam combiner is used to polarization-bundle the light emitted by the second characteristic reflection prism group and the light from the half-wave plate, and the coupling mirror is used to couple the light combined by the polarization beam combiner into the optical fiber.

[0007] Optionally, the characteristic slow-axis collimator includes a first zone and a second zone connected to each other, the second zone having a first anti-reflection curved surface protruding away from the first zone, the first zone having a first reflecting surface and a second reflecting surface relatively arranged and parallel to each other, the first reflecting surface and the second reflecting surface are both planes, the arrangement direction of the first reflecting surface and the second reflecting surface is parallel to the fast-axis direction, the first reflecting surface is used to reflect the light beam from the fast-axis collimator to the second reflecting surface, and the second reflecting surface reflects the light beam from the first reflecting surface to the second zone and emits from the first anti-reflection curved surface.

[0008] Optionally, the first region further has a second planar anti-reflection surface, the second anti-reflection surface is opposite to the first anti-reflection curved surface, the first reflection surface and the second reflection surface are both connected to the second anti-reflection surface, and the second anti-reflection surface is used to transmit the light beam from the fast axis collimator to the first reflection surface.

[0009] Optionally, the first area and the second area are integrally formed.

[0010] Optionally, the first zone includes a first sub-zone and a second sub-zone spaced apart, the first sub-zone includes a first reflecting surface, the second sub-zone includes a second reflecting surface, and the area between the first reflecting surface and the second reflecting surface is located outside the first zone; the second zone also has a second planar anti-reflection surface, the second anti-reflection surface is opposite to the first anti-reflection curved surface, the first reflecting surface and the second reflecting surface are both connected to the second anti-reflection surface, and the second anti-reflection surface is used to transmit the light beam from the second reflecting surface to the first anti-reflection curved surface.

[0011] Optionally, the first reflective surface is covered with a first reflective film, and the second reflective surface is covered with a second reflective film.

[0012] Optionally, the first anti-reflection curved surface is covered with a first anti-reflection film.

[0013] Optionally, the second anti-reflection surface is covered with a second anti-reflection film.

[0014] Optionally, the characteristic reflective prism includes: a prism top surface and a prism bottom surface that are arranged opposite to each other, the prism top surface includes a first top surface area and a second top surface area that are connected, the second top surface area and the first top surface area have an obtuse angle, the prism bottom surface includes a first bottom surface area and a second bottom surface area that are connected, the second bottom surface area and the first bottom surface area have an obtuse angle, the first bottom surface area and the first top surface area are arranged opposite to and parallel to each other, and the second bottom surface area and the second top surface area are arranged opposite to and parallel to each other; a first side surface that is planar and located between the prism top surface and the prism bottom surface The first side surface is respectively connected to the first top surface area, the second top surface area, the first bottom surface area and the second bottom surface area; the second side surface is located between the top surface of the prism and the bottom surface of the prism and is in a planar state, the second side surface is respectively connected to the second top surface area and the second bottom surface area and is respectively spaced from the first top surface area and the first bottom surface area, and the second side surface is perpendicular to the first side surface; the third side surface is located between the top surface of the prism and the bottom surface of the prism and is in a planar state, the third side surface is respectively connected to the first top surface area and the second top surface area, and an acute angle is formed between the third side surface and the first side surface and an acute angle is formed between the third side surface and the second side surface.

[0015] Optionally, the height of the edge of the second top surface area away from the first top surface area along the fast axis direction is greater than the height of the edge of the second top surface area toward the first top surface area along the fast axis direction; the first side surface is used to transmit the light beam from the characteristic slow axis collimator to the third side surface, the third side surface is used to reflect the light beam from the first side surface to the second bottom surface area, the second bottom surface area is used to reflect the light beam from the third side surface to the second top surface area, and the second top surface area is used to reflect the light beam from the second bottom surface area to the second side surface and emit from the second side surface.

[0016] Optionally, the height of the edge of the second top surface area away from the first top surface area along the fast axis direction is smaller than the height of the edge of the second top surface area toward the first top surface area along the fast axis direction; the first side surface is used to transmit the light beam from the characteristic slow axis collimator to the third side surface, the third side surface is used to reflect the light beam from the first side surface to the second top surface area, the second top surface area is used to reflect the light beam from the third side surface to the second bottom surface area, and the second bottom surface area is used to reflect the light beam from the second top surface area to the second side surface and emit from the second side surface.

[0017] Optionally, it also includes: a shell, wherein the semiconductor laser chip group, the fast-axis collimator group, the characteristic slow-axis collimator group and the characteristic reflection prism group are all surrounded by the shell; wherein the height of the surface of the semiconductor laser chip away from the bottom surface of the shell along the fast axis direction is smaller than the height of the surface of the characteristic slow-axis collimator away from the bottom surface of the shell along the fast axis direction.

[0018] Optionally, it also includes: a heat sink for supporting the semiconductor laser chipset, wherein the thickness of the heat sink is consistent in different areas.

[0019] The technical solution of the present invention has the following beneficial effects:

[0020] The semiconductor laser beam combining device provided by the technical solution of the present invention, the characteristic slow axis collimator is used to collimate the light beam in the slow axis direction and adjust the height of the light beam in the fast axis direction, that is, the incident light and the outgoing light of the characteristic slow axis collimator are at different heights in the fast axis direction, thereby increasing the optical path of the light beam in the characteristic slow axis collimator, thereby reducing the distance between the surface of the characteristic slow axis collimator away from the fast axis collimator and the front cavity surface of the semiconductor laser chip, thereby making the arrangement of the semiconductor laser chip, the fast axis collimator group and the characteristic slow axis collimator more compact in the light emitting direction, thereby compressing the volume of the semiconductor laser beam combining device. Secondly, the characteristic reflection prism is used to change the slow axis direction of the light beam from the characteristic slow axis collimator, and different characteristic reflection prisms in the characteristic reflection prism group are used to adjust the light beam to have different heights in the fast axis direction, so that the light beams emitted by different semiconductor laser chips in the semiconductor laser chip group are arranged in space. There is no need to set the heights of different semiconductor laser chips in the fast axis direction to be stepped, and the heights of different semiconductor laser chips in the fast axis direction are consistent. In this way, the heat dissipation differences of different semiconductor laser chips are relatively consistent, and the heat dissipation of different semiconductor laser chips is uniform, which improves the reliability of the semiconductor laser beam combining device.

[0021] Furthermore, the heat sink is used to support the semiconductor laser chipset, and the thickness of the heat sink is consistent in different areas. Since the heat sink does not need to be set in a stepped shape, the heat sink can be set to a uniform thickness, and the weight of the heat sink is reduced, thereby achieving lightweight. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0023] Figure 1 A schematic diagram of a top view of a semiconductor laser beam combining device provided in an embodiment of the present invention;

[0024] Figure 2 It is a schematic diagram of the structure of a semiconductor laser chip and a heat sink;

[0025] Figure 3 A schematic diagram of a characteristic slow-axis collimator in a semiconductor laser beam combining device provided by an embodiment of the present invention;

[0026] Figure 4 A schematic diagram of a characteristic slow axis collimator in another semiconductor laser beam combining device provided by an embodiment of the present invention;

[0027] Figure 5 A schematic diagram of a characteristic reflection prism in a semiconductor laser beam combining device provided by an embodiment of the present invention;

[0028] Figure 6 It is a partial schematic diagram of a semiconductor laser beam combining device in the related art. DETAILED DESCRIPTION

[0029] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0031] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0032] An embodiment of the present invention provides a semiconductor laser beam combining device, referring to Figure 1 ,include:

[0033] The semiconductor laser chip group A includes: arranged in a first direction X and arranged in a fast axis direction Y (reference Figure 2 ) a plurality of semiconductor laser chips 100 having the same height, the first direction X intersecting with the fast axis direction Y;

[0034] A fast axis collimator lens group B, comprising a plurality of fast axis collimators 200, wherein the fast axis collimators 200 are located on a side of the semiconductor laser chip 100 in the opposite direction of the light output direction thereof;

[0035] A characteristic slow axis collimator lens group C, comprising a plurality of characteristic slow axis collimators 300, wherein the characteristic slow axis collimators 300 are located on a side of the fast axis collimator lens 200 that is away from the semiconductor laser chip 100 along the light output direction, and the characteristic slow axis collimator lens 300 is used to collimate the light beam in the slow axis direction and adjust the height of the light beam in the fast axis direction;

[0036] The characteristic reflection prism group D includes a plurality of characteristic reflection prisms 400, wherein the characteristic reflection prism 400 is located on the side of the characteristic slow axis collimator 300 away from the fast axis collimator 200; the characteristic reflection prism 400 is used to redirect the slow axis direction of the light beam from the characteristic slow axis collimator 300, and different characteristic reflection prisms in the characteristic reflection prism 400 are used to adjust the light beam to have different heights in the fast axis direction.

[0037] In the semiconductor laser beam combining device of this embodiment, the characteristic slow axis collimator 300 is used to collimate the light beam in the slow axis direction and adjust the height of the light beam in the fast axis direction, that is, the incident light and the outgoing light of the characteristic slow axis collimator 300 have different heights in the fast axis direction, which increases the optical path of the light beam in the characteristic slow axis collimator 300, so that the distance between the surface of the characteristic slow axis collimator 300 away from the fast axis collimator 200 and the front cavity surface of the semiconductor laser chip 100 can be reduced, and the arrangement of the semiconductor laser chip 100, the fast axis collimator 200 and the characteristic slow axis collimator 300 in the light emitting direction can be made more compact, thereby compressing the volume of the semiconductor laser beam combining device. Secondly, the characteristic reflection prism 400 is used to change the slow axis direction of the light beam from the characteristic slow axis collimator 300. Different characteristic reflection prisms in the characteristic reflection prism 400 are used to adjust the light beam to have different heights in the fast axis direction, so that the light beams emitted by different semiconductor laser chips 100 in the semiconductor laser chip group A are arranged in space. There is no need to set the heights of different semiconductor laser chips 100 in the fast axis direction to be stepped. The heights of different semiconductor laser chips 100 in the fast axis direction are consistent. In this way, the heat dissipation differences of different semiconductor laser chips 100 are relatively consistent, and the heat dissipation of different semiconductor laser chips 100 is uniform, which improves the reliability of the semiconductor laser beam combining device.

[0038] In one embodiment, the first direction X is perpendicular to the fast axis direction Y.

[0039] The light emitting direction of the semiconductor laser chip 100 intersects the first direction X and the fast axis direction Y. Exemplarily, the light emitting direction of the semiconductor laser chip 100 is perpendicular to the first direction X and the fast axis direction Y.

[0040] The semiconductor laser beam combining device also includes: a heat sink 101, which is used to support the semiconductor laser chipset A, and the thickness of the heat sink 101 is consistent in different areas. Since the heat sink does not need to be set in a stepped shape, the heat sink 101 can be set to a uniform thickness, the weight of the heat sink is reduced, and lightweight is achieved. In one embodiment, the thickness of the heat sink 101 is 1 / 2 times to ~2 times the thickness of the fast axis collimator 200 along the fast axis direction, for example, the thickness of the heat sink 101 is 1 / 2 times, 1 times, 1.5 times or 2 times the thickness of the fast axis collimator 200 along the fast axis direction.

[0041] In other embodiments, there is no limitation on the ratio of the thickness of the heat sink 101 to the thickness of the fast axis collimator 200 along the fast axis direction.

[0042] In one embodiment, the semiconductor laser beam combining device further comprises: a housing (not shown), wherein the semiconductor laser chipset group A, the fast axis collimator lens group B, the characteristic slow axis collimator lens group C and the characteristic reflective prism group D are all surrounded by the housing. The heat sink 101 is also surrounded by the housing.

[0043] In one embodiment, the height of the surface of the semiconductor laser chip 100 away from the bottom surface of the housing along the fast axis direction is less than the height of the surface of the characteristic slow axis collimator C away from the bottom surface of the housing along the fast axis direction. Since the semiconductor laser chip 100 is close to the bottom surface of the housing, it is beneficial for the semiconductor laser chip 100 to achieve rapid heat dissipation.

[0044] In one embodiment, the number of the semiconductor laser chipset A is multiple, and the multiple semiconductor laser chipset A is respectively a first semiconductor laser chipset A1 and a second semiconductor laser chipset A2. The number of the fast axis collimator lens group B is multiple, and the multiple fast axis collimator lens groups B are respectively a first fast axis collimator lens group B1 and a second fast axis collimator lens group B2; the number of the characteristic slow axis collimator lens group C is multiple, and the multiple characteristic slow axis collimator lens groups C are respectively a first characteristic slow axis collimator lens group C1 and a second characteristic slow axis collimator lens group C2; the number of the characteristic reflection prism group D is multiple, and the multiple characteristic reflection prism groups D are respectively a first characteristic reflection prism group D1 and a second characteristic reflection prism group D2.

[0045] Among them, the first fast-axis collimator lens group B1 is located on the side of the first semiconductor laser chip group A1 along the light output direction, and the second fast-axis collimator lens group B2 is located on the side of the second semiconductor laser chip group A2 along the light output direction; the first characteristic slow-axis collimator lens group C1 is located on the side of the first fast-axis collimator lens group B1 away from the first semiconductor laser chip group A1, and the second characteristic slow-axis collimator lens group C2 is located on the side of the second fast-axis collimator lens group B2 away from the second semiconductor laser chip group A2; the first characteristic reflection prism group D1 is located on the side of the first characteristic slow-axis collimator lens group C1 away from the first fast-axis collimator lens group B1, and the second characteristic reflection prism group D2 is located on the side of the second characteristic slow-axis collimator lens group C2 away from the second fast-axis collimator lens group B2.

[0046] The semiconductor laser beam combining device also includes: a reflector 500; a half-wave plate 600; a polarization beam combiner 700; and a coupling mirror 800. The half-wave plate 600 is located between the reflector 500 and the polarization beam combiner 700. The reflector 500 is used to reflect the light emitted from the first characteristic reflection prism group D1 to the half-wave plate 600. The polarization beam combiner 700 is used to polarization-bundle the light emitted from the second characteristic reflection prism group D2 and the light from the half-wave plate 600, and the coupling mirror 800 is used to couple the light combined by the polarization beam combiner 700 into the optical fiber 900.

[0047] In one embodiment, reference Figure 3 and Figure 4 The characteristic slow axis collimator 300 includes a first region Q1 and a second region Q2 connected to each other, wherein the second region Q2 has a first anti-reflection curved surface S protruding away from the first region Q1. S4 The first region Q1 has first reflecting surfaces S arranged opposite and parallel to each other. S2 and the second reflecting surface S S3 , the first reflecting surface S S2 and the second reflecting surface S S3 are all planes, the first reflecting surface S S2 and the second reflecting surface S S3 The arrangement direction of the first reflection surface S is parallel to the fast axis direction. S2 For reflecting the light beam from the fast axis collimator 200 to the second reflective surface S S3 , the second reflecting surface S S3 The first reflecting surface S S2 The light beam is reflected to the second region Q2 and then reflected from the first anti-reflection curved surface S S4 Shoot.

[0048] In one embodiment, reference Figure 3 The first region Q1 also has a planar second anti-reflection surface S S1 , the second antireflection surface S S1 With the first antireflection surface S S4 In contrast, the first reflective surface S S2 and the second reflecting surface S S3 Both with the second antireflection surface S S1 Connect, second antireflection surface S S1 It is used to transmit the light beam from the fast axis collimator 200 to the first reflection surface S S2 .

[0049] In one embodiment, reference Figure 3 , the first region Q1 and the second region Q2 are integrally formed.

[0050] In one embodiment, reference Figure 4 The first region Q1 includes a first sub-region Q11 and a second sub-region Q12 separated from each other, and the first sub-region Q11 includes a first reflective surface S S2 The second sub-region Q12 includes a second reflective surface S S3 , the first reflecting surface S S2 and the second reflecting surface S S3 The area between the first area Q1 is located outside the first area Q2; the second area Q2 also has a planar second anti-reflection surface S S1 , the second antireflection surface S S1 With the first antireflection surface S S4In contrast, the first reflecting surface S S2 and the second reflecting surface S S3 Both with the second antireflection surface S S1 Connect, second antireflection surface S S1 For transmitting light from the second reflecting surface S S3 The beam reaches the first anti-reflection surface S S4 .

[0051] In one embodiment, the first reflective surface S S2 Covered with a first reflective film, the second reflective surface S S3 Covered with a second reflective film.

[0052] It should be noted that Figure 3 In the slow axis collimator 300, the first reflection surface S S2 The first reflective film may be covered, and the first reflective surface S S2 The first reflective film may not be covered, and the second reflective surface S S3 The second reflective film can be covered, and the second reflective surface S S3 The second reflective film may not be covered. Figure 4 In the slow axis collimator 300, the first reflection surface S S2 Covering the first reflective film, the second reflective surface S S3 Cover with a second reflective film.

[0053] In one embodiment, the first anti-reflection curved surface S S4 The first anti-reflection curved surface S is covered with a first anti-reflection film. S4 The first anti-reflection film may not be covered.

[0054] In one embodiment, the second anti-reflection surface S S1 The second anti-reflection surface S is covered with a second anti-reflection film. S1 The second antireflection film may not be covered.

[0055] In one embodiment, reference Figure 3 , the first reflecting surface S S2 To the second reflecting surface S S3 The distance along the fast axis is h s , the second antireflection surface S S1 The spacing distance between the first region and the second region Q2 along the light emitting direction is t1.

[0056] In one embodiment, reference Figure 5 The characteristic reflection prism 400 includes: prism top surfaces S arranged opposite to each other R4 and the prism base S R3 , the top surface S of the prism R4 The first top surface area S including the connection R41 and the second top surface area SR42 , the second top surface area S R42 The first top surface area S R41 There is an obtuse angle between the bottom surface S of the prism R3 The first bottom surface area S including the connection R31 and the second bottom surface area S R32 , the second bottom area S R32 The first bottom area S R31 There is an obtuse angle between the first bottom area S R31 With the first top surface area S R41 The second bottom surface area S is arranged oppositely and parallel to R32 With the second top surface area S R42 Set oppositely and parallel; located on the top surface S of the prism R4 and the prism base S R3 The first plane side S between R1 , first side S R1 Respectively with the first top surface area S R41 , the second top surface area S R42 , the first bottom area S R31 and the second bottom surface area S R32 Connection; located on the top surface S of the prism R4 and the prism base S R3 The second side surface S formed by the plane R5 , second side S R5 Respectively with the second top surface area S R42 and the second bottom surface area S R32 connected to and respectively connected to the first top surface area S R41 and the first bottom area S R31 Interval, second side S R5 and the first side S R1 Vertical; located on the top surface S of the prism R4 and the prism base S R3 The third side S is a plane R2 , the third side S R2 Respectively with the first top surface area S R41 and the second top surface area S R42 Connection, third side S R2 With the first side S R1 There is an acute angle between them and the second side surface S R5 There is an acute angle between them.

[0057] The third side S R2 It can also be combined with the second top surface area S R42 and the second bottom surface area S R32 connect.

[0058] Prism top surface S R4 and the prism base SR3 Arranged along the fast axis.

[0059] The first top surface area S R41 and the second top surface area S R42 All are planes, the first bottom area S R31 and the second bottom surface area S R32 All are flat.

[0060] In one embodiment, the second top surface area S R42 Away from the first top surface area S R41 The height of the edge along the fast axis direction is greater than the second top surface area S R42 Towards the first top surface area S R41 The height of the edge along the fast axis direction; the first side S R1 Used to transmit the beam from the characteristic slow axis collimator to the third side S R2 , the third side S R2 For reflecting the first side S R1 The light beam reaches the second bottom area S R32 , the second bottom area S R32 For reflecting the third side S R2 The light beam reaches the second top surface area S R42 , the second top surface area S R42 For reflecting the second bottom area S R32 The beam reaches the second side S R5 And from the second side S R5 Shoot.

[0061] In one embodiment, the height of the edge of the second top surface area away from the first top surface area along the fast axis direction is smaller than the height of the edge of the second top surface area toward the first top surface area along the fast axis direction; the first side surface is used to transmit the light beam from the characteristic slow axis collimator to the third side surface, the third side surface is used to reflect the light beam from the first side surface to the second top surface area, the second top surface area is used to reflect the light beam from the third side surface to the second bottom surface area, and the second bottom surface area is used to reflect the light beam from the second top surface area to the second side surface and emit from the second side surface. In this way, the height of the outgoing light of the same characteristic reflection prism 400 is smaller than the height of the incident light of the characteristic reflection prism 400, the height of the outgoing light of the same characteristic reflection prism 400 is smaller than the height of the outgoing light of the characteristic slow axis collimator 300, and the height of the outgoing light of multiple characteristic reflection prisms 400 is smaller than the height of the outgoing light of the characteristic slow axis collimator 300, so that the volume of the semiconductor laser beam combining device is more compact in the fast axis direction.

[0062] refer to Figure 6 , Figure 6 The semiconductor laser beam combining device of the related art, the effective focal length f0 of the slow axis collimator 20 is expressed as

[0063] .

[0064] Working distance of slow axis collimator 20 .

[0065] Among them, n s0 is the refractive index of the slow axis collimator; n b0 is the refractive index of the environment where the slow axis collimator is located; r 10 is the curvature radius of the first surface 21 of the slow axis collimator, r 20 The radius of curvature of the second surface 22 of the slow axis collimator; t0 is the thickness of the slow axis collimator.

[0066] When 20 When is infinite, ; .

[0067] In one embodiment, reference Figure 3 , ; Wherein, f is the effective focal length of the characteristic slow axis collimator 300; n s is the refractive index of the characteristic slow axis collimator 300; r1 is the first anti-reflection curved surface S of the characteristic slow axis collimator 300 S4 The radius of curvature is t, the dimension of the second area 302 along the light emitting direction of the second area 302, t1 is the spacing distance between the second anti-reflection surface and the second area along the light emitting direction, and h s is the distance from the first reflection surface to the second reflection surface along the fast axis direction; D is the distance from the second anti-reflection surface to the semiconductor laser chip.

[0068] Figure 3 The first antireflection surface S S4 The distance to the anterior cavity surface is relative to Figure 6 The distance between the first surface 21 and the front cavity surface is shortened. .

[0069]

[0070] When n s =n s0 , r1=r 10 , when f=f0

[0071]

[0072] In addition, t+t1-t0=x,

[0073] In one embodiment, n s Approximately 1.5, and f is approximately twice r1. When hs / x is greater than 1 / 2, 1 is greater than zero.

[0074] In another embodiment, reference Figure 4 , , When n s =n s0 , r1=r 10 , then f=f0; at the same time, t=t0, then

[0075] . Greater than zero.

[0076] Figure 4 The first antireflection surface S S4 The distance to the anterior cavity surface is relative to Figure 6 The distance between the first surface 21 and the front cavity surface is shortened. .

[0077] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A semiconductor laser beam combining device, characterized in that: include: A semiconductor laser chip group, comprising a plurality of semiconductor laser chips arranged in a first direction and having the same height in a fast axis direction, wherein the first direction intersects with the fast axis direction; A fast axis collimator lens group, comprising a plurality of fast axis collimators, wherein the fast axis collimators are located on a side of the semiconductor laser chip in the opposite direction of the light output; A characteristic slow axis collimator lens group, comprising a plurality of characteristic slow axis collimators, wherein the characteristic slow axis collimators are located on a side of the fast axis collimator lens away from the semiconductor laser chip along the light output direction, and the characteristic slow axis collimator lens is used to collimate the light beam in the slow axis direction and adjust the height of the light beam in the fast axis direction; A characteristic reflection prism group comprises a plurality of characteristic reflection prisms, wherein the characteristic reflection prisms are located on a side of the characteristic slow axis collimator away from the fast axis collimator; the characteristic reflection prisms are used to change the slow axis direction of the light beam from the characteristic slow axis collimator, and different characteristic reflection prisms in the characteristic reflection prism group are used to adjust the light beam to have different heights in the fast axis direction; the heights of the emergent light from the plurality of characteristic reflection prisms in the characteristic reflection prism group are all smaller than the height of the emergent light from the characteristic slow axis collimator.

2. The semiconductor laser beam combining device according to claim 1, characterized in that: There are multiple semiconductor laser chip groups, and the multiple semiconductor laser chip groups are respectively a first semiconductor laser chip group and a second semiconductor laser chip group; there are multiple fast-axis collimator groups, and the multiple fast-axis collimator groups are respectively a first fast-axis collimator group and a second fast-axis collimator group; there are multiple characteristic slow-axis collimator groups, and the multiple characteristic slow-axis collimator groups are respectively a first characteristic slow-axis collimator group and a second characteristic slow-axis collimator group; there are multiple characteristic reflection prism groups, and the multiple characteristic reflection prism groups are respectively a first characteristic reflection prism group and a second characteristic reflection prism group; Wherein, the first fast-axis collimator lens group is located at a side of the first semiconductor laser chip group along the light output reverse direction, and the second fast-axis collimator lens group is located at a side of the second semiconductor laser chip group along the light output reverse direction; the first characteristic slow-axis collimator lens group is located at a side of the first fast-axis collimator lens group away from the first semiconductor laser chip group, and the second characteristic slow-axis collimator lens group is located at a side of the second fast-axis collimator lens group away from the second semiconductor laser chip group; the first characteristic reflection prism group is located at a side of the first characteristic slow-axis collimator lens group away from the first fast-axis collimator lens group, and the second characteristic reflection prism group is located at a side of the second characteristic slow-axis collimator lens group away from the second fast-axis collimator lens group; The semiconductor laser beam combining device also includes: a reflector; a half-wave plate; a polarization beam combiner; and a coupling mirror; the half-wave plate is located between the reflector and the polarization beam combiner; the reflector is used to reflect the light emitted by the first characteristic reflection prism group to the half-wave plate; the polarization beam combiner is used to polarization-bundle the light emitted by the second characteristic reflection prism group and the light from the half-wave plate, and the coupling mirror is used to couple the light combined by the polarization beam combiner into the optical fiber.

3. The semiconductor laser beam combining device according to claim 1 or 2, characterized in that: The characteristic slow-axis collimator includes a first area and a second area that are connected, the second area has a first anti-reflection curved surface that protrudes away from the first area, the first area has a first reflecting surface and a second reflecting surface that are oppositely arranged and parallel, the first reflecting surface and the second reflecting surface are both planes, the arrangement direction of the first reflecting surface and the second reflecting surface is parallel to the fast axis direction, the first reflecting surface is used to reflect the light beam from the fast-axis collimator to the second reflecting surface, and the second reflecting surface reflects the light beam from the first reflecting surface to the second area and emits from the first anti-reflection curved surface.

4. The semiconductor laser beam combining device according to claim 3, characterized in that: The first region also has a second planar anti-reflection surface, the second anti-reflection surface is opposite to the first anti-reflection curved surface, The first reflecting surface and the second reflecting surface are both connected to the second anti-reflection surface, and the second anti-reflection surface is used for transmitting the light beam from the fast axis collimator to the first reflecting surface.

5. The semiconductor laser beam combining device according to claim 4, characterized in that: The first area and the second area are integrally formed.

6. The semiconductor laser beam combining device according to claim 3, characterized in that: The first area includes a first sub-area and a second sub-area spaced apart, the first sub-area includes a first reflecting surface, the second sub-area includes a second reflecting surface, and the area between the first reflecting surface and the second reflecting surface is located outside the first area; the second area also has a second planar anti-reflection surface, the second anti-reflection surface is opposite to the first anti-reflection curved surface, the first reflecting surface and the second reflecting surface are both connected to the second anti-reflection surface, and the second anti-reflection surface is used to transmit the light beam from the second reflecting surface to the first anti-reflection curved surface.

7. The semiconductor laser beam combining device according to claim 3, characterized in that: The first reflective surface is covered with a first reflective film, and the second reflective surface is covered with a second reflective film.

8. The semiconductor laser beam combining device according to claim 3, characterized in that: The first anti-reflection curved surface is covered with a first anti-reflection film.

9. The semiconductor laser beam combining device according to claim 4 or 6, characterized in that: The second anti-reflection surface is covered with a second anti-reflection film.

10. The semiconductor laser beam combining device according to claim 1, characterized in that: The characteristic reflection prism comprises: A prism top surface and a prism bottom surface are arranged opposite to each other, wherein the prism top surface includes a first top surface area and a second top surface area connected to each other, and an obtuse angle is formed between the second top surface area and the first top surface area, and the prism bottom surface includes a first bottom surface area and a second bottom surface area connected to each other, and an obtuse angle is formed between the second bottom surface area and the first bottom surface area, and the first bottom surface area and the first top surface area are arranged opposite to and parallel to each other, and the second bottom surface area and the second top surface area are arranged opposite to and parallel to each other; A first side surface which is a plane and is located between the top surface of the prism and the bottom surface of the prism, the first side surface being connected to the first top surface area, the second top surface area, the first bottom surface area, and the second bottom surface area respectively; A second side surface which is located between the top surface and the bottom surface of the prism and is in a plane, the second side surface is respectively connected to the second top surface area and the second bottom surface area and is respectively spaced apart from the first top surface area and the first bottom surface area, and the second side surface is perpendicular to the first side surface; A third side surface is located between the top surface and the bottom surface of the prism and is in a plane. The third side surface is connected to the first top surface area and the second top surface area respectively. The third side surface has an acute angle with the first side surface and an acute angle with the second side surface.

11. The semiconductor laser beam combining device according to claim 10, characterized in that: The height of the edge of the second top surface area away from the first top surface area along the fast axis direction is greater than the height of the edge of the second top surface area facing the first top surface area along the fast axis direction; the first side surface is used to transmit the light beam from the characteristic slow axis collimator to the third side surface, the third side surface is used to reflect the light beam from the first side surface to the second bottom surface area, the second bottom surface area is used to reflect the light beam from the third side surface to the second top surface area, and the second top surface area is used to reflect the light beam from the second bottom surface area to the second side surface and emit from the second side surface.

12. The semiconductor laser beam combining device according to claim 10, characterized in that: The height of the edge of the second top surface area away from the first top surface area along the fast axis direction is smaller than the height of the edge of the second top surface area toward the first top surface area along the fast axis direction; the first side surface is used to transmit the light beam from the characteristic slow axis collimator to the third side surface, the third side surface is used to reflect the light beam from the first side surface to the second top surface area, the second top surface area is used to reflect the light beam from the third side surface to the second bottom surface area, and the second bottom surface area is used to reflect the light beam from the second top surface area to the second side surface and emit from the second side surface.

13. The semiconductor laser beam combining device according to claim 1, characterized in that: Also includes: A housing, wherein the semiconductor laser chip group, the fast axis collimator lens group, the characteristic slow axis collimator lens group and the characteristic reflection prism group are all surrounded by the housing; The height of the surface of the semiconductor laser chip away from the bottom surface of the housing along the fast axis direction is smaller than the height of the surface of the characteristic slow axis collimator away from the bottom surface of the housing along the fast axis direction.

14. The semiconductor laser beam combining device according to claim 1, characterized in that: Also includes: The heat sink is used to support the semiconductor laser chipset, and the thickness of the heat sink is consistent in different areas.

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