Drive control method, device, equipment and storage medium for power semiconductor devices

Abstract

The present application provides a drive control method and device, equipment, and storage medium for a power semiconductor device, relating to the technical field of high-voltage direct current power transmission. The drive control method includes: generating an on command and an off command for the power semiconductor device. Generating the on command includes: generating a protective trigger on command when the voltage between the anode and the cathode of the power semiconductor device meets a preset first condition; generating an on command for the power semiconductor device when an on signal sent by the converter valve control system is received and / or a protective trigger on command is generated; generating the off command includes: generating a protective trigger off command when the voltage between the anode and the cathode meets a preset second condition; generating an off command for the power semiconductor device when a protective trigger off command is generated, an off signal sent by the converter valve control system is received, and / or a self-turn-off command is generated.

Description

Technical Field

[0001] The present application relates to the technical field of high-voltage direct current power transmission, and more specifically, to a driving control method and device, equipment, and storage medium for power semiconductor devices. Background Art

[0002] The line-commuted converter (LCC) based on semi-controlled devices has been widely used in DC power transmission systems due to its low losses and low costs. The switching devices for commutation in the semi-controlled converter can be either uncontrolled devices (such as diodes) or semi-controlled devices (such as thyristors). However, when the semi-controlled converter operates in a weak AC system connection or in the event of an AC system fault, commutation failure is likely to occur due to voltage disturbances in the AC system.

[0003] To solve the problem of commutation failure at the receiving end of the DC power transmission system, some scholars have proposed in recent years to use a commutation valve with controllable turn-off ability at the receiving end system, that is, adding controllable turn-off devices to the original commutation valve bridge arm to achieve forced commutation, thereby effectively avoiding the occurrence of commutation failure. However, the new topology is a complex system with a large number of uncontrolled devices, semi-controlled devices, and fully controlled devices connected in series and parallel. For the control method of the driving unit of fully controlled devices such as IGCT and IGBT, especially the turn-off logic, is a technical difficulty that needs to be considered. Summary of the Invention

[0004] To solve at least one of the above problems, the present application proposes a driving control method and device, equipment, and storage medium for power semiconductor devices.

[0005] According to a first aspect of the present application, at least one embodiment of the present application provides a driving control method for power semiconductor devices, including:

[0006] Generating an on command for the power semiconductor device, including: detecting the voltage between the anode and the cathode of the power semiconductor device; generating a protective trigger on command when the voltage between the anode and the cathode meets a preset first condition; detecting whether an on signal sent by the commutation valve control system is received; and generating the on command for the power semiconductor device when the on signal sent by the commutation valve control system is received and / or the protective trigger on command is generated;

[0007] Generating a turn-off command for the power semiconductor device includes: generating a protective trigger turn-off command when the voltage between the anode and the cathode meets a preset second condition; detecting whether a turn-off signal sent by the converter valve control system is received; generating a self-turn-off command through logical operation when the turn-off signal sent by the converter valve control system is not received, the protective trigger turn-off command is not generated, and the voltage between the anode and the cathode meets a preset third condition; and generating the turn-off command for the power semiconductor device when the protective trigger turn-off command is generated, the turn-off signal sent by the converter valve control system is received, and / or the self-turn-off command is generated.

[0008] For example, in some embodiments of the present application, the preset first condition is that the voltage between the anode and the cathode is greater than the protective trigger action voltage threshold.

[0009] For example, in some embodiments of the present application, the generating a protective trigger turn-off command when the voltage between the anode and the cathode meets a preset second condition includes: generating a protective trigger timed turn-off signal after a second delay under the condition of generating the protective trigger turn-on command; generating a first reverse voltage establishment signal when the voltage between the anode and the cathode is less than the device reverse voltage detection threshold; generating a third reverse voltage establishment signal after a third delay after generating the first reverse voltage establishment signal; and generating the protective trigger turn-off command when the protective trigger timed turn-off signal and the third reverse voltage establishment signal are generated.

[0010] For example, in some embodiments of the present application, the generating a self-turn-off command through logical operation when the turn-off signal sent by the converter valve control system is not received, the protective trigger turn-off command is not generated, and the voltage between the anode and the cathode meets a preset third condition includes: generating a second reverse voltage establishment signal after a first delay after generating the first reverse voltage establishment signal; and generating the self-turn-off command when the second reverse voltage establishment signal is generated and a self-turn-off enable signal is generated.

[0011] For example, in some embodiments of the present application, the generating the self-turn-off command when the second reverse voltage establishment signal is generated and a self-turn-off enable signal is generated includes: generating the self-turn-off enable signal when an on command for the power semiconductor device has been generated, and the turn-off signal sent by the converter valve control system is not received, the protective trigger turn-off command is not generated, and the self-turn-off command is not generated.

[0012] For example, in some embodiments of the present application, when generating the second reverse voltage establishment signal and generating the self-turn-off enable signal, generating the self-turn-off command further includes: when receiving the turn-off signal issued by the converter valve control system, generating the protective trigger turn-off command, and / or when the self-turn-off command has been generated, not generating the self-turn-off enable signal.

[0013] According to a second aspect of the present application, at least one embodiment of the present application provides a drive control device for a power semiconductor device, configured to execute the drive control method for a power semiconductor device according to any one of the first aspects, including: a communication module, configured to receive an on signal and a turn-off signal issued by a converter valve control system; a detection module, configured to detect the voltage between the anode and the cathode of the power semiconductor device; a logic operation module, respectively connected to the communication module and the detection module to receive the on signal, the turn-off signal, and the voltage between the anode and the cathode of the power semiconductor device, and generate an on command and a turn-off command for the power semiconductor device through logic operation; an on module, connected to the logic operation module to receive the on command to turn on the power semiconductor device; a turn-off module, connected to the logic operation module to receive the turn-off command to turn off the power semiconductor device.

[0014] For example, in some embodiments of the present application, it further includes: a power supply module, connected to an external power supply circuit and respectively connected to the communication module, the detection module, the logic operation module, the on module, and the turn-off module to supply power to each module.

[0015] According to a third aspect of the present application, at least one embodiment of the present application provides a device, including: one or more processors; a memory, configured to store one or more programs; when the one or more programs are executed by the one or more processors, the one or more processors execute the method according to any one of the first aspects.

[0016] According to a fourth aspect of the present application, at least one embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored, and when the program is executed by a processor, it implements the method according to any one of the first aspects.

[0017] Through the above exemplary embodiments, a driving control method and device for a power semiconductor device provided by the present application include two driving control methods when the downlink communication of the driving unit is normal and faulty. When the downlink communication of the driving unit is normal, the power semiconductor device is controlled by sending a turn-on signal and a turn-off signal through the converter valve control system; when the downlink communication of the driving unit fails, through the monitoring of the state of the power semiconductor device, that is, monitoring the voltage across the power semiconductor device, the self-turn-off control of the turn-off device is realized, simplifying the control logic and solving the control problem of the power semiconductor device when the downlink communication of the driving unit fails.

[0018] It should be understood that the above general description and the following detailed description are only exemplary and do not limit the present application. Brief Description of the Drawings

[0019] By referring to the drawings and describing in detail its exemplary embodiments, the above and other objectives, features and advantages of the present application will become more obvious. The drawings described below are only some embodiments of the present application and do not limit the present application.

[0020] Figure 1 The flowchart of a driving control method for a power semiconductor device showing an exemplary embodiment;

[0021] Figure 2 The schematic diagram of a driving control device for a power semiconductor device showing an exemplary embodiment;

[0022] Figure 3 The structural diagram of an electronic device provided by the present application is shown. Detailed Description of the Embodiments

[0023] Exemplary embodiments will now be described more fully with reference to the drawings. However, the exemplary embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this application will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. Like reference numerals in the figures denote like or similar parts, and thus their repeated description will be omitted.

[0024] The features, structures or characteristics described may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of the embodiments of the present disclosure. However, those skilled in the art will realize that the technical solutions of the present disclosure can be practiced without one or more of these specific details, or can be implemented in other ways, components, materials, devices, etc. In these cases, well-known structures, methods, devices, implementations, materials or operations will not be shown or described in detail.

[0025] The flowcharts shown in the accompanying drawings are merely illustrative and not necessarily inclusive of all content and operations / steps, nor are they necessarily to be executed in the order described. For example, some operations / steps may be decomposed, while some operations / steps may be combined or partially combined, so the actual execution order may change according to the actual situation.

[0026] The terms "first", "second", etc. in the description and claims of this application and the above accompanying drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally further include unlisted steps or units, or may optionally further include other steps or units inherent to these processes, methods, products, or devices.

[0027] Those skilled in the art can understand that the accompanying drawings are only schematic diagrams of exemplary embodiments, and the modules or processes in the accompanying drawings are not necessarily essential for implementing this application, so they cannot be used to limit the protection scope of this application.

[0028] Figure 1 A flowchart of a drive control method for a power semiconductor device showing an exemplary embodiment.

[0029] As Figure 1 shown, the flowchart of the drive control method for a power semiconductor device includes: generating a turn-on command for the power semiconductor device and generating a turn-off command for the power semiconductor device.

[0030] Generating a turn-on command for the power semiconductor device includes:

[0031] Detecting the voltage between the anode and cathode of the power semiconductor device; generating a protective trigger turn-on command when the voltage between the anode and cathode meets a preset first condition.

[0032] Detecting whether an on-signal issued by the commutation valve control system is received;

[0033] Generating a turn-on command for the power semiconductor device when either condition of receiving the on-signal issued by the commutation valve control system and generating a protective trigger turn-on command is met.

[0034] According to the exemplary embodiment, the preset first condition is: the voltage between the anode and cathode of the power semiconductor device is greater than the protective trigger action voltage threshold. Among them, the protective trigger action voltage threshold can be set by itself.

[0035] Generating a turn-off command for the power semiconductor device includes:

[0036] When the voltage between the anode and the cathode of the power semiconductor device meets a preset second condition, a protective trigger turn-off command is generated.

[0037] Detect whether a turn-off signal is sent by the converter valve control system;

[0038] When no turn-off signal is sent by the converter valve control system, no protective trigger turn-off command is generated, and the voltage between the anode and the cathode meets a preset third condition, a self-turn-off command is generated through logical operation.

[0039] When any one of the conditions of generating a protective trigger turn-off command, receiving a turn-off signal sent by the converter valve control system, and generating a self-turn-off command is satisfied, a turn-off command for the power semiconductor device is generated.

[0040] According to the exemplary embodiment, the preset second condition includes: when the voltage between the anode and the cathode of the power semiconductor device is greater than the protective trigger action voltage threshold and a protective trigger turn-on command is generated, after a second delay T2, a protective trigger timed turn-off signal is generated. When the voltage between the anode and the cathode of the power semiconductor device is less than the device reverse voltage detection threshold, a first reverse voltage establishment signal is generated; after a third delay T3, a third reverse voltage establishment signal is generated. When the protective trigger timed turn-off signal and the third reverse voltage establishment signal are generated, a protective trigger turn-off command is generated.

[0041] According to the exemplary embodiment, the preset third condition includes: when the voltage between the anode and the cathode of the power semiconductor device is less than the device reverse voltage detection threshold, a first reverse voltage establishment signal is generated; after a first delay T1, a second reverse voltage establishment signal is generated; when the second reverse voltage establishment signal and a self-turn-off enable signal are generated, a self-turn-off command is generated.

[0042] According to some embodiments, the delay times of the first delay T1, the second delay T2, and the third delay T3 in the present application can be set by oneself.

[0043] According to some embodiments, the self-turn-off enable signal of the drive unit is generated from the output terminal of an RS flip-flop. The RS flip-flop includes a set terminal, a reset terminal, and an output terminal, and the initial value of the output value is 0, that is, the self-turn-off enable signal is not output. When the set terminal is 1 and the reset terminal is 0, the output terminal is 1, that is, when the corresponding signal is input to the set terminal and no corresponding signal is input to the reset terminal, the output terminal outputs the self-turn-off enable signal; when the reset terminal is 1, the output terminal is 0, that is, when the corresponding signal is input to the reset terminal, the output terminal does not output the self-turn-off enable signal.

[0044] Among them, according to the examples of the present application, the conditions for generating the self-turn-off enable signal include: when any one of the conditions of receiving the turn-on signal issued by the converter valve control system and generating a protective trigger turn-on command is satisfied, a turn-on command for the power semiconductor device is generated. After the turn-on command for the power semiconductor device has been generated, the set signal of the RS flip-flop is 1, and the turn-off signal issued by the converter valve control system has not been received, the protective trigger turn-off command has not been generated, and the self-turn-off command has not been generated. The reset signal of the RS flip-flop is 0, and the output of the RS flip-flop is 1, then the self-turn-off enable signal is generated.

[0045] In addition, according to the examples of the present application, the conditions for not generating the self-turn-off enable signal include: when any one of the conditions of receiving the turn-off signal issued by the converter valve control system, generating a protective trigger turn-off command, and generating the self-turn-off command is satisfied, the reset signal of the RS flip-flop is 1, and the output of the RS flip-flop is 0, then the self-turn-off enable signal is not generated.

[0046] By using whether to generate the self-turn-off command as one of the judgment conditions for the reset signal of the RS flip-flop, the present application can reduce the possibility of repeatedly generating the self-turn-off command in this drive control method. And by setting the cycle period in the present application, the self-turn-off command will only be generated once within the period.

[0047] According to some embodiments, the power semiconductor device is a turn-off device, including at least one of IGBT, MOSFET, GTO, and IGCT.

[0048] A drive control method for a power semiconductor device provided by the present application includes two drive control methods when the downlink communication of the drive unit is normal and faulty. When the downlink communication of the drive unit is normal, the converter valve control system issues a turn-on signal and a turn-off signal to control the power semiconductor device; when the downlink communication of the drive unit is faulty, by monitoring the state of the power semiconductor device, that is, monitoring the voltage across the power semiconductor device, the drive self-turn-off control of the turn-off device is realized, simplifying the control logic and solving the control problem of the power semiconductor device when the downlink communication of the drive unit is faulty.

[0049] Figure 2 The schematic diagram of a drive control device for a power semiconductor device showing an exemplary embodiment is shown.

[0050] As Figure 2 shown, the drive control device for a power semiconductor device includes: a communication module 201, a detection module 202, a logic operation module 203, a turn-on module 204, and a turn-off module 205, where:

[0051] The communication module 201 is configured to receive the turn-on signal and the turn-off signal issued by the converter valve control system, and send the turn-on signal and the turn-off signal to the logic operation module 203.

[0052] The detection module 202 is used to detect the voltage between the anode and the cathode of the power semiconductor device, and send the detected voltage value between the anode and the cathode to the logic operation module 203.

[0053] The logic operation module 203 is respectively connected to the communication module 201 and the detection module 202 to receive the turn-on signal, the turn-off signal and the voltage between the anode and the cathode of the power semiconductor device, and generate a turn-on command and a turn-off command for the power semiconductor device through logical operation, including:

[0054] When the voltage between the anode and the cathode meets the preset first condition, the logic operation module 203 is used to generate a protective trigger turn-on command. And it is used to detect whether a turn-on signal sent by the converter valve control system is received; when any one of the received turn-on signal sent by the converter valve control system and the generated protective trigger turn-on command is satisfied, a turn-on command for the power semiconductor device is generated.

[0055] According to the exemplary embodiment, the preset first condition is: the voltage between the anode and the cathode of the power semiconductor device is greater than the protective trigger action voltage threshold. Wherein, the protective trigger action voltage threshold can be set by itself.

[0056] The turn-on module 204 is connected to the logic operation module 203 to receive the turn-on command to turn on the power semiconductor device 10.

[0057] The logic operation module 203 is further used to generate a protective trigger turn-off command when the voltage between the anode and the cathode of the power semiconductor device meets the preset second condition. And it is used to detect whether a turn-off signal sent by the converter valve control system is received: when the turn-off signal sent by the converter valve control system is not received, the protective trigger turn-off command is not generated, and the voltage between the anode and the cathode meets the preset third condition, the logic operation module 203 generates a self-turn-off command through logical operation.

[0058] The logic operation module 203 is further used to generate a turn-off command for the power semiconductor device when any one of the generated protective trigger turn-off command, the received turn-off signal sent by the converter valve control system and the generated self-turn-off command is satisfied.

[0059] According to an exemplary embodiment, the preset second condition includes: when the voltage between the anode and the cathode of the power semiconductor device is greater than the protective trigger operation voltage threshold and a protective trigger turn-on command is generated, after a second delay, a protective trigger timed turn-off signal is generated. When the voltage between the anode and the cathode of the power semiconductor device is less than the device reverse voltage detection threshold, a first reverse voltage establishment signal is generated; after a third delay after the generation of the first reverse voltage establishment signal, a third reverse voltage establishment signal is generated. When the protective trigger timed turn-off signal and the third reverse voltage establishment signal are generated, a protective trigger turn-off command is generated.

[0060] According to an exemplary embodiment, the preset third condition includes: when the voltage between the anode and the cathode of the power semiconductor device is less than the device reverse voltage detection threshold, a first reverse voltage establishment signal is generated; after a first delay, a second reverse voltage establishment signal is generated; when the second reverse voltage establishment signal is generated and a self-turn-off enable signal is generated, a self-turn-off command is generated.

[0061] The turn-off module 205 is connected to the logic operation module 203 to receive the turn-off command to turn off the power semiconductor device 10.

[0062] According to some embodiments, the drive control device for the power semiconductor device further includes: a power supply module 206.

[0063] The power supply module 206 is connected to an external power supply circuit (not shown in the figure) and is respectively connected to the communication module 201, the detection module 202, the logic operation module 203, the turn-on module 204, and the turn-off module 205 to supply power to each module.

[0064] Figure 3 The structure diagram of an electronic device provided by the present application is shown.

[0065] Refer to Figure 3 , Figure 3 A kind of electronic device is provided, including a processor and a memory. The memory stores computer instructions, when the computer instructions are executed by the processor, the processor executes the computer instructions to implement the method and refinement scheme as Figure 1 shown.

[0066] It should be understood that the above device embodiments are illustrative, and the devices disclosed in the present application can also be implemented in other ways. For example, the division of units / modules in the above embodiments is only a logical function division, and there can be other division methods in actual implementation. For example, multiple units, modules or components can be combined, or can be integrated into another system, or some features can be ignored or not executed.

[0067] In addition, unless otherwise specified, in each embodiment of the present application, each functional unit / module can be integrated into one unit / module, or each unit / module can exist physically alone, or two or more units / modules can be integrated together. The above integrated unit / module can be implemented in the form of hardware or in the form of a software program module.

[0068] When the integrated unit / module is implemented in the form of hardware, the hardware can be a digital circuit, an analog circuit, etc. The physical implementation of the hardware structure includes but is not limited to transistors, memristors, etc. Unless otherwise specified, the processor or chip can be any suitable hardware processor, such as CPU, GPU, FPGA, DSP, and ASIC, etc. Unless otherwise specified, the on-chip cache, off-chip memory, and memory can be any suitable magnetic storage medium or magneto-optical storage medium, such as resistive random access memory (RRAM), dynamic random access memory (DRAM), static random access memory (SRAM), enhanced dynamic random access memory (EDRAM), high-bandwidth memory (HBM), hybrid memory cube (HMC), etc.

[0069] When the integrated unit / module is implemented in the form of a software program module and sold or used as an independent product, it can be stored in a computer-readable memory. Based on this understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or all or part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in the various embodiments disclosed herein. And the aforementioned memory includes: USB flash drives, read-only memory (ROM), random access memory (RAM), external hard drives, magnetic disks, or optical discs, etc., which are various media that can store program codes.

[0070] The embodiments of the present application also provide a non-transitory computer storage medium storing a computer program, which, when executed by multiple processors, causes the processors to execute the methods and refinement schemes as Figure 1 shown.

[0071] It should be clearly understood that this application describes how to form and use specific examples, but this application is not limited to any details of these examples. Instead, based on the teachings disclosed in this application, these principles can be applied to many other embodiments.

[0072] In addition, it should be noted that the above-mentioned drawings are only schematic illustrations of the processes included in the method according to the exemplary embodiments of this application, rather than for the purpose of limitation. It is easy to understand that the processes shown in the above-mentioned drawings do not indicate or limit the chronological order of these processes. Additionally, it is also easy to understand that these processes can be executed, for example, synchronously or asynchronously in multiple modules.

[0073] The exemplary embodiments of this application have been specifically shown and described above. It should be understood that this application is not limited to the detailed structures, settings, or implementation methods described herein; rather, this application is intended to cover various modifications and equivalent settings included within the spirit and scope of the appended claims.

Claims

1. A drive control method for a power semiconductor device, characterized in that: include: Generating a start command of the power semiconductor device, comprising: detecting a voltage between an anode and a cathode of the power semiconductor device; When the voltage between the anode and the cathode meets a preset first condition, a protective trigger opening command is generated, wherein the preset first condition is that the voltage between the anode and the cathode is greater than a protective trigger action voltage threshold; Detect whether an opening signal sent by the converter valve control system is received; generating an opening command for the power semiconductor device when receiving an opening signal sent by the converter valve control system and / or generating the protective trigger opening command; Generating a shutdown command for the power semiconductor device, comprising: When the voltage between the anode and the cathode meets a preset second condition, generating a protective trigger shutdown command, comprising: Under the condition of generating the protective trigger opening command, after a second delay, generating a protective trigger timing shutdown signal; When the voltage between the anode and the cathode is less than a device reverse voltage detection threshold, generating a first reverse voltage establishment signal; After the first reverse voltage establishing signal is generated, a third reverse voltage establishing signal is generated after a third delay; In case of generating the protective trigger timing shutdown signal and the third reverse voltage establishment signal, generating the protective trigger shutdown command; Detecting whether a shut-off signal sent by the converter valve control system is received; When the shutdown signal sent by the converter valve control system is not received, the protective trigger shutdown command is not generated, and the voltage between the anode and the cathode meets the preset third condition, a self-shutdown command is generated through a logic operation, including: After the first reverse voltage establishing signal is generated, a second reverse voltage establishing signal is generated after a first delay; generating the self-shutdown command in case that the second reverse voltage establishing signal is generated and the self-shutdown enabling signal is generated; When the protective trigger shutdown command is generated, the shutdown signal sent by the converter valve control system is received and / or the self-shutdown command is generated, a shutdown command for the power semiconductor device is generated.

2. The driving control method according to claim 1, characterized in that: The step of generating the self-shutdown command when the second reverse voltage establishing signal is generated and the self-shutdown enable signal is generated comprises: The self-shutdown enable signal is generated when the turn-on command of the power semiconductor device has been generated, and the shut-down signal issued by the converter valve control system has not been received, the protective trigger shut-down command has not been generated, and the self-shutdown command has not been generated.

3. The driving control method according to claim 2, characterized in that: The method of generating the self-shutdown command when the second reverse voltage establishing signal is generated and the self-shutdown enable signal is generated also includes: In case the shutdown signal sent by the converter valve control system is received, the protective trigger shutdown command is generated and / or the self-shutdown command is generated, the self-shutdown enable signal is not generated.

4. A drive control device for a power semiconductor device, used to execute the drive control method for a power semiconductor device as claimed in any one of claims 1 to 3, characterized in that: include: A communication module, used to receive an on signal and a off signal sent by a converter valve control system; A detection module, used for detecting the voltage between the anode and cathode of the power semiconductor device; a logic operation module, connected to the communication module and the detection module respectively, to receive the on-signal, the off-signal and the voltage between the anode and the cathode of the power semiconductor device, and to generate an on-command and an off-command of the power semiconductor device through logic operation; An activation module, connected to the logic operation module, to receive the activation command to activate the power semiconductor device; A shut-down module is connected to the logic operation module to receive the shut-down command to shut down the power semiconductor device.

5. The drive control device according to claim 4, characterized in that: Also includes: The power supply module is connected to the external power supply circuit and is respectively connected to the communication module, the detection module, the logic operation module, the opening module and the closing module to supply power to each module.

6. A device, characterized in that: include: one or more processors; A memory for storing one or more programs; When the one or more programs are executed by the one or more processors, the one or more processors execute the method according to any one of claims 1 to 3.

7. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the method according to any one of claims 1 to 3 is implemented.

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