A semiconductor temperature measurement method and device based on electroluminescence spectroscopy

Abstract

The present invention discloses a semiconductor temperature measurement method and device based on electroluminescence spectrum; the method is as follows: after reaching thermal equilibrium, applying an initial current density not greater than 5% of the maximum working current density value to obtain an electroluminescence spectrum; performing a least squares fitting of a nonlinear function on the electroluminescence spectrum data that meets the requirements, and calculating a temperature correction coefficient; under any working state, collecting the electroluminescence spectrum again, performing a least squares fitting of a nonlinear function on the electroluminescence spectrum data that meets the requirements, and combining them to obtain the temperature of the semiconductor in the semiconductor electroluminescent device to be measured at the target current density. The device includes an integrating sphere, an optical fiber, and a spectrometer. The present invention adopts a non-contact measurement method, is not affected by device packaging, and improves the accuracy and reliability of measurement.

Description

Technical Field

[0001] The present invention relates to the field of methods for measuring the semiconductor temperature of electroluminescent devices, and in particular to a method and device for measuring the semiconductor temperature based on electroluminescent spectrum. Background Art

[0002] As a bright new star in the field of semiconductor technology, electroluminescent semiconductor materials are gradually becoming the focus of scientific research and industry due to their unique and excellent optoelectronic properties. This type of material not only exhibits impressive long carrier diffusion distance and high carrier mobility, but also has continuously adjustable band gap characteristics, providing unlimited possibilities for the design of high-performance optoelectronic devices. It is particularly worth mentioning that electroluminescent semiconductor materials are usually prepared by a relatively low-cost solution method, which greatly reduces production costs and promotes their commercialization process. Its wide spectral absorption range means that it can efficiently capture and convert a wider range of light energy, while the low defect state density ensures the high efficiency and long life of the device. In addition, these materials also have high luminous efficiency and narrow spectral bandwidth, which makes them show a wide range of application potential and research value in the fields of semiconductor devices such as LEDs, lasers, solar cells, X-ray detectors and field-effect transistors. However, although electroluminescent semiconductor materials have made remarkable achievements in photoelectric conversion efficiency, the stability problem when applied to light-emitting devices is still one of the key factors restricting their widespread commercial application. A large number of studies have shown that temperature is an important factor affecting the stability of electroluminescent semiconductor materials and their devices. Under high temperature conditions, the thermal stress inside the material increases, which may lead to changes in the crystal structure, an increase in interface defects, and a deterioration in charge transfer characteristics, which in turn seriously affects the luminescence performance and life of the device. Therefore, accurately obtaining the temperature information of electroluminescent semiconductors under working conditions is of vital importance for a deep understanding of their instability mechanism, optimizing device structure, and improving device performance.

[0003] However, most of the temperature measurement methods currently used are difficult to directly and accurately measure the true temperature of electroluminescent semiconductors under working conditions. This situation has seriously hindered researchers from conducting in-depth research on the instability of electroluminescent semiconductor materials and devices, and has also restricted the further development of related technologies. In order to solve this problem, it is particularly important to explore a temperature measurement method based on the material properties of electroluminescent semiconductors. Fortunately, electroluminescence spectrum, as a direct reflection of material properties, provides us with a new idea. By carefully analyzing the characteristic parameters of the electroluminescence spectrum that change with temperature, the corresponding relationship between the spectral characteristic parameters and the temperature of the electroluminescent semiconductor can be established, which can not only realize the instant and non-contact monitoring of the semiconductor temperature, but also provide a powerful analysis tool for fields such as materials science and optoelectronic engineering. The implementation of this method is expected to open a new chapter in the research of electroluminescent materials and promote the leapfrog development of related technologies in the direction of higher stability and better performance. Summary of the invention

[0004] The purpose of the present invention is to address the deficiencies of the prior art and provide a semiconductor temperature measurement method and device based on electroluminescence spectroscopy.

[0005] The object of the present invention is achieved through the following technical solution: a semiconductor temperature measurement method based on electroluminescence spectroscopy, the method is applied to a semiconductor temperature measurement device based on electroluminescence spectroscopy, comprising the following steps:

[0006] (1) At a known ambient temperature When the semiconductor electroluminescent device to be tested reaches thermal equilibrium with the known ambient temperature, an initial current density not exceeding 5% of the maximum operating current density is applied to the semiconductor electroluminescent device to be tested, and a spectrometer is used to collect the electroluminescent spectrum intensity set. , and keep no less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. ;

[0007] (2) Based on the electroluminescence spectrum intensity set , multi-parameter fitting is performed on the first nonlinear function by the least square method to obtain the temperature correction coefficient of the semiconductor in the semiconductor electroluminescent device to be tested , the first nonlinear function is:

[0008] (1);

[0009] in, is the Boltzmann constant; , and represent the proportionality coefficient at the initial current density, the optical band gap width of the semiconductor, and the Urbach energy of the conductor, respectively; express Any electroluminescence spectrum intensity in express The corresponding photon energy;

[0010] (3) Then, the target current density is applied to the semiconductor electroluminescent device to be tested, and the electroluminescence spectrum intensity set is collected using a spectrometer. , and keep no less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. ;

[0011] (4) Based on the electroluminescence spectrum intensity set , the second nonlinear function is fitted with multiple parameters by the least squares method to obtain the temperature of the semiconductor in the semiconductor electroluminescent device to be tested at the target current density ; The second nonlinear function is:

[0012] (2);

[0013] in, , and represent the proportionality coefficient at the target current density, the optical band gap width of the semiconductor, and the Urbach energy of the semiconductor, respectively; express Any electroluminescence spectrum intensity in express The corresponding photon energy.

[0014] Furthermore, the semiconductor temperature measurement device based on electroluminescence spectroscopy includes: an integrating sphere, an optical fiber and a spectrometer;

[0015] The integrating sphere is used to collect photons of the electroluminescent device in different wavelength bands;

[0016] The optical fiber is used to transmit the collected photons of different wavelengths;

[0017] The spectrometer is used to measure the intensity information of spectra in different wavebands.

[0018] Furthermore, the semiconductor electroluminescent device is a light emitting diode, a solar cell, a photodetector, a semiconductor laser or a field effect transistor.

[0019] Furthermore, the semiconductor in the semiconductor electroluminescent device is a combination of one or more materials selected from organic-inorganic hybrid materials, inorganic compound materials, organic compound materials or low-dimensional semiconductor materials.

[0020] Furthermore, the organic-inorganic hybrid material is a combination of one or more materials selected from the group consisting of organic cationic perovskite materials, organic-inorganic hybrid cationic perovskite materials, metal halide materials, organic rare earth composite materials, and metal-organic framework materials.

[0021] Furthermore, the inorganic compound material is a combination of one or more materials selected from inorganic perovskite materials, nitrides, oxides, oxynitrides, II-VI group materials, IV group materials, III-V group compounds or rare earth materials.

[0022] Furthermore, the organic compound material is a combination of one or more materials selected from polycyclic aromatic hydrocarbons, organic small molecules, organic polymers, metal-organic complexes or polymer semiconductors.

[0023] Furthermore, the low-dimensional semiconductor material is an organic cationic perovskite material, an organic-inorganic hybrid cationic perovskite material, a metal halide material, an organic rare earth composite material, a metal-organic framework material, an inorganic perovskite material, a nitride, an oxide, a nitride oxide, a II-VI group material, a group IV material, a group III-V group compound, a rare earth material, a polycyclic aromatic hydrocarbon, an organic small molecule, an organic polymer, a metal-organic complex or a polymer semiconductor, and is formed by one or more combinations of quantum dots, nanocrystals, nanowires or two-dimensional materials.

[0024] The present invention also provides a semiconductor temperature measurement device based on electroluminescence spectroscopy, comprising one or more processors for implementing the above-mentioned semiconductor temperature measurement method based on electroluminescence spectroscopy.

[0025] The present invention also provides a computer-readable storage medium on which a program is stored. When the program is executed by a processor, it is used to implement the above-mentioned semiconductor temperature measurement method based on electroluminescence spectroscopy.

[0026] The beneficial effects of the present invention are:

[0027] 1) The present invention utilizes that the relationship between the semiconductor electroluminescence spectrum and temperature is controlled by the non-thermal radiation emission spectrum. By selecting a suitable wavelength range and calibrating it with the ambient temperature, the corresponding temperature correction coefficient is obtained. Then, in actual operation, the relationship between the electroluminescence spectrum intensity and the photon energy within the corresponding wavelength range is collected, and the semiconductor temperature can be derived through mathematical calculation. Compared with other testing methods, the present invention can achieve semiconductor temperature measurement only by testing the electroluminescence spectrum of the semiconductor. As long as the semiconductor can generate an electroluminescence spectrum through a transparent packaging material, the semiconductor temperature can be accurately obtained. It is not affected by the packaging of the electroluminescent device, and it can also indirectly reflect the overall operating temperature of the electroluminescent device, providing a reference for related industry applications.

[0028] 2) The innovative method of the present invention is remarkable in that it is non-invasive, that is, it can monitor and accurately measure the surface temperature of semiconductor materials in real time and quickly during actual operation without affecting the normal operation of the electroluminescent device. This feature makes the method an ideal tool for evaluating device performance, optimizing working conditions and preventing overheating damage, greatly improving production efficiency and product reliability.

[0029] 3) The method of the present invention has shown extremely wide applicability. It can not only effectively measure the material temperature of semiconductors inside transparent packages, but also break through the limitations of complex conditions such as package shape, material type and manufacturing process. This flexibility means that in a variety of electronic devices and optoelectronic devices, no matter how unique the package design or how stringent the process requirements, the present invention can provide accurate and timely temperature monitoring solutions, providing strong support for product development, quality control and safety maintenance;

[0030] 4) The invention is unique and adopts an innovative non-contact temperature measurement technology, which completely eliminates the risk of human damage caused by direct contact with the electroluminescent device to be measured in traditional methods; this design not only ensures the safety of the measurement process, but also avoids any adverse effects of potential physical interference on device performance, thereby ensuring the accuracy and reliability of the measurement results; at the same time, this non-contact measurement method also provides scientific researchers with a more flexible and efficient experimental means, promoting the further development of electroluminescent technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a structural diagram of a semiconductor temperature measurement device based on electroluminescence spectroscopy in Example 1;

[0032] Figure 2 This is the electroluminescence spectrum obtained by the spectrometer at the initial current density in Example 3;

[0033] Figure 3This is the electroluminescence spectrum after fitting at the initial current density in Example 3;

[0034] Figure 4 This is the electroluminescence spectrum acquired by the spectrometer at the target current density in Example 3;

[0035] Figure 5 This is the electroluminescence spectrum after fitting at the target current density in Example 3;

[0036] Figure 6 The electroluminescence spectra collected by the spectrometer at different target current densities in Example 4;

[0037] Figure 7 The electroluminescence spectra after fitting at different target current densities in Example 4;

[0038] Figure 8 This is the electroluminescence spectrum obtained by the spectrometer at the initial current density in Example 5;

[0039] Fig. 9 This is the electroluminescence spectrum after fitting at the initial current density in Example 5;

[0040] Fig.10 The electroluminescence spectra collected by the spectrometer at different target current densities in Example 5;

[0041] Fig.11 The electroluminescence spectra after fitting at different target current densities in Example 5;

[0042] Fig.12 This is a structural diagram of a semiconductor temperature measurement device based on electroluminescence spectroscopy in Example 6. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical scheme and advantages of the present invention more clear, the present invention is further described in detail in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0044] Example 1: Figure 1 As shown, the present invention provides a semiconductor temperature measurement device based on electroluminescence spectroscopy, comprising: an integrating sphere, an optical fiber and a spectrometer; the integrating sphere is used to collect photons of the electroluminescent device in different bands; the optical fiber is used to conduct the collected photons of different wavelengths; the spectrometer is used to measure the intensity information of the spectrum in different bands.

[0045] The detailed process of non-contact measurement of the temperature of semiconductors in electroluminescent devices based on electroluminescence spectroscopy and integrating sphere technology is intuitively demonstrated. First, the semiconductor electroluminescent device to be measured is placed inside the integrating sphere to ensure that the interference of ambient light is minimized. Subsequently, an appropriate current is applied to the semiconductor electroluminescent device to be measured to stimulate it to emit a characteristic spectrum, and the spectral information is then quickly transmitted to the spectrometer through optical fiber. In the spectrometer, the light of each band is finely separated and accurately recorded to form detailed spectral data. Finally, the collected electroluminescence spectrum intensity is deeply analyzed and fitted using pre-established mathematical models and algorithms to accurately calculate the semiconductor temperature under the corresponding spectrum. This process not only realizes the rapid and non-destructive measurement of device temperature, but also greatly improves the accuracy and stability of the measurement.

[0046] Embodiment 2: The present invention also provides a semiconductor temperature measurement method based on electroluminescence spectroscopy, the method is applied to a semiconductor temperature measurement device based on electroluminescence spectroscopy, and comprises the following steps:

[0047] (1) At a known ambient temperature Under the condition that the semiconductor electroluminescent device to be tested reaches thermal equilibrium with the known ambient temperature, an initial current density not exceeding 5% of the maximum operating current density value is applied to the semiconductor electroluminescent device to be tested, and a spectrometer is used to collect the electroluminescent spectrum intensity set by transmitting photons of different wavelengths. .

[0048] The electroluminescence spectrum intensity set for , the corresponding photon energy range is ,in, ,satisfy , represents the photon energy at the initial current density The corresponding electroluminescence spectrum intensity.

[0049] (2) Preserve the electroluminescence spectrum intensity set Not less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. .

[0050] The electroluminescence spectrum intensity set for , any electroluminescence spectrum intensity satisfy ,in, Represents the electroluminescence spectrum intensity set The maximum electroluminescence spectrum intensity in .

[0051] (3) Based on the electroluminescence spectrum intensity set , multi-parameter fitting is performed on the first nonlinear function by the least square method to obtain the temperature correction coefficient of the semiconductor in the semiconductor electroluminescent device to be tested , the first nonlinear function is:

[0052] (1);

[0053] in, is the Boltzmann constant; , and represent the proportionality coefficient at the initial current density, the optical band gap width of the semiconductor, and the Urbach energy of the conductor, respectively; express Any electroluminescence spectrum intensity in express The corresponding photon energy.

[0054] (4) Then, the target current density is applied to the semiconductor electroluminescent device to be tested, and the electroluminescent spectrum intensity set is collected using a spectrometer by transmitting photons of different wavelengths. .

[0055] The electroluminescence spectrum intensity set for , the corresponding photon energy range is ,in, represents the photon energy at the target current density The corresponding electroluminescence spectrum intensity.

[0056] (5) Preserve the electroluminescence spectrum intensity set Not less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. .

[0057] The electroluminescence spectrum intensity set for , any electroluminescence spectrum intensity satisfy ,in, Represents the electroluminescence spectrum intensity set The maximum electroluminescence spectrum intensity in .

[0058] (6) Based on the electroluminescence spectrum intensity set , the second nonlinear function is fitted with multiple parameters by the least squares method to obtain the temperature of the semiconductor in the semiconductor electroluminescent device to be tested at the target current density ; The second nonlinear function is:

[0059] (2);

[0060] in, , and represent the proportionality coefficient at the target current density, the optical band gap width of the semiconductor, and the Urbach energy of the semiconductor, respectively; express Any electroluminescence spectrum intensity in express The corresponding photon energy.

[0061] The semiconductor electroluminescent device is a light emitting diode, a solar cell, a photodetector, a semiconductor laser or a field effect transistor.

[0062] The semiconductor in the semiconductor electroluminescent device is a combination of one or more materials selected from organic-inorganic hybrid materials, inorganic compound materials, organic compound materials or low-dimensional semiconductor materials.

[0063] The organic-inorganic hybrid material is a combination of one or more materials selected from the group consisting of an organic cationic perovskite material, an organic-inorganic hybrid cationic perovskite material, a metal halide material, an organic rare earth composite material, or a metal-organic framework material.

[0064] The inorganic compound material is a combination of one or more materials selected from inorganic perovskite materials, nitrides, oxides, oxynitrides, II-VI group materials, IV group materials, III-V group compounds or rare earth materials.

[0065] The organic compound material is a combination of one or more materials selected from polycyclic aromatic hydrocarbons, organic small molecules, organic polymers, metal organic complexes or polymer semiconductors.

[0066] The low-dimensional semiconductor material is an organic cation perovskite material, an organic-inorganic hybrid cation perovskite material, a metal halide material, an organic rare earth composite material, a metal organic framework material, an inorganic perovskite material, a nitride, an oxide, a nitride oxide, a II-VI group material, a group IV material, a group III-V group compound, a rare earth material, a polycyclic aromatic hydrocarbon, an organic small molecule, an organic polymer, a metal organic complex or a polymer semiconductor, and is formed of any one of quantum dots, nanocrystals, nanowires or two-dimensional materials, or a combination of one or more of these materials.

[0067] Example 3: Using semiconductor as Cs 0.7 FA 0.6 PbBr3 is used as an example to prepare a light emitting diode X1.0.7 FA 0.6 The temperature of PbBr3 was measured.

[0068] A semiconductor temperature measurement method based on electroluminescence spectroscopy comprises the following steps:

[0069] (1) At a known ambient temperature Under this condition, when the light-emitting diode X1 is placed at a known ambient temperature for 10 minutes, after the light-emitting diode X1 reaches thermal equilibrium with the known ambient temperature, an initial current density of 0.6mA / cm² (not more than 5% of the maximum operating current density of the light-emitting diode X1) is applied to the light-emitting diode X1, and the maximum operating current density of the light-emitting diode X1 is 2000mA / cm². By transmitting photons of different wavelengths, a spectrometer is used to collect photon energy within the range The corresponding electroluminescence spectrum intensity set : .

[0070] The electroluminescence spectrum collected by the spectrometer at the initial current density is shown in Figure 2 As shown, from Figure 2 The electroluminescence spectrum intensity set can be obtained from The maximum electroluminescence spectrum intensity in is 22a.u.

[0071] (2) Preserve the electroluminescence spectrum intensity set Not less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. .

[0072] The electroluminescence spectrum intensity set retained in this embodiment The corresponding photon energy range is .

[0073] (3) According to the photon energy range The corresponding electroluminescence spectrum intensity set , multi-parameter fitting is performed on the first nonlinear function by the least square method to obtain the temperature correction coefficient of the semiconductor in the semiconductor electroluminescent device to be tested .

[0074] In this embodiment, the multi-parameter fitting is performed by the least square method, and the electroluminescence spectrum after fitting under the initial current density can be obtained, such as Figure 3 As shown. And get the semiconductor Cs in the light-emitting diode X1 0.7 FA 0.6 Temperature correction factor for PbBr3 is 0.9945.

[0075] (4) Then, a target current density of 1695.7 mA / cm² is applied to the semiconductor electroluminescent device to be tested, and a spectrometer is used to collect the electroluminescent spectrum intensity set by transmitting photons of different wavelengths. .

[0076] The electroluminescence spectrum collected by the spectrometer at the target current density is shown in Figure 4 As shown, from Figure 4 The electroluminescence spectrum intensity set can be obtained from The maximum electroluminescence spectrum intensity in is 13200a.u.

[0077] (5) Keep the electroluminescence spectrum intensity set Not less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. .

[0078] The electroluminescence spectrum intensity set retained in this embodiment The corresponding photon energy range is .

[0079] (6) According to the photon energy range The corresponding electroluminescence spectrum intensity set , the second nonlinear function is fitted with multiple parameters by the least squares method to obtain the temperature of the semiconductor in the semiconductor electroluminescent device to be tested at the target current density .

[0080] In this embodiment, the multi-parameter fitting is performed by the least square method, and the fitted electroluminescence spectrum at the target current density can be obtained, such as Figure 5 As shown. And get the semiconductor Cs in the light-emitting diode X1 0.7 FA 0.6 Temperature of PbBr3 at target current density 1695.7mA / cm² It is 343.47K.

[0081] Example 4: Taking the green light perovskite material as an example, a green light perovskite light emitting diode X2 is prepared. In this example, the temperature of the green light perovskite material in the green light perovskite light emitting diode X2 is measured in the field.

[0082] The green light perovskite material is as follows: ITO glass substrate is used. 0.7 FA 0.6The PbBr3 precursor solution was prepared by dissolving 0.14mmol CsBr, 0.1mmol FABr, 0.2mmol PbBr2 and 0.02mmol GABr in 1mL DMSO. The green light perovskite precursor solution was spin coated at 4500rpm. After 60 seconds of spin coating, the substrate was annealed at 100℃ for 10 minutes to obtain the green light perovskite material.

[0083] A semiconductor temperature measurement method based on electroluminescence spectroscopy comprises the following steps:

[0084] (1) At a known ambient temperature Under this condition, when the green perovskite light emitting diode X2 is placed at a known ambient temperature for 10 minutes, after the green perovskite light emitting diode X2 reaches thermal equilibrium with the known ambient temperature, an initial current density of 0.6mA / cm² (not more than 5% of the maximum operating current density of the green perovskite light emitting diode X2) is applied to the green perovskite light emitting diode X2. The maximum operating current density of the green perovskite light emitting diode X2 is 2000mA / cm². By transmitting photons of different wavelengths, a spectrometer is used to collect photon energy within the range The corresponding electroluminescence spectrum intensity set : .

[0085] (2) Preserve the electroluminescence spectrum intensity set Not less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. .

[0086] The electroluminescence spectrum intensity set retained in this embodiment The corresponding photon energy range is .

[0087] (3) According to the photon energy range The corresponding electroluminescence spectrum intensity set , multi-parameter fitting of the first nonlinear function is performed by the least squares method to obtain the temperature correction coefficient of the green light perovskite material in the semiconductor electroluminescent device to be tested is 0.9945.

[0088] (4) Then, a target current density of 3.84, 14.70, 40.35, 98.46, 214.83, 439.94, 876.33 or 1695.69 mA / cm² is applied to the semiconductor electroluminescent device to be tested, and photons of different wavelengths are transmitted. A spectrometer is used to collect the photon energy range under different target current densities. The corresponding electroluminescence spectrum intensity set.

[0089] The electroluminescence spectra collected by the spectrometer at different target current densities are shown in the figure below: Figure 6 shown.

[0090] (5) Obtaining the photon energy range that meets the requirements under different target current densities; and performing multi-parameter fitting on the second nonlinear function by the least squares method based on the set of electroluminescence spectrum intensities corresponding to the photon energy range that meets the requirements under different target current densities, and obtaining the temperature of the green perovskite material in the green perovskite light-emitting diode X2 at different target current densities of 3.84, 14.70, 40.35, 98.46, 214.83, 439.94, 876.33 or 1695.69 mA / cm² is 294.07K, 295.27K, 296.71K, 298.82K, 302.75K, 309.06K, 321.09K or 343.47K.

[0091] The fitted electroluminescence spectra at different target current densities are shown in Figure 2. Figure 7 shown.

[0092] Table 1 shows the experimental results of the green perovskite material in the green perovskite light emitting diode X2 at different current densities. It can be seen from Table 1 that at the initial current density, the temperature of the green perovskite light emitting diode X2 is consistent with the ambient temperature because there is no obvious heat energy generated, but as the current density increases, the temperature of the green perovskite material in the green perovskite light emitting diode X2 increases significantly, and continuously increases from the known ambient temperature to a value about 50K higher than the known ambient temperature.

[0093] Table 1: Experimental results of green perovskite materials at different current densities in green perovskite LED X2

[0094]

[0095] Example 5: Taking near-infrared perovskite material as an example, a near-infrared perovskite light-emitting diode X3 is prepared. In this example, the temperature of the near-infrared perovskite material in the near-infrared perovskite light-emitting diode X3 is measured.

[0096] The electron transport layer uses ZnO, and PbI2, FAI and SFB10 are dissolved in DMF with a molar ratio of 1:1:0.03 to prepare a near-infrared FAPbI3 precursor solution. 2+ The concentration was 0.13 mol / L. The precursor was spin-coated onto a ZnO substrate at 5000 rpm, and after 90 seconds, the substrate was annealed at 100°C for 15 minutes to obtain a near-infrared perovskite material.

[0097] A semiconductor temperature measurement method based on electroluminescence spectroscopy comprises the following steps:

[0098] (1) At a known ambient temperature When the near-infrared perovskite light-emitting diode X3 is placed at a known ambient temperature for 10 minutes, and the near-infrared perovskite light-emitting diode X3 reaches thermal equilibrium with the known ambient temperature, an initial current density of 2.18mA / cm² (not greater than 5% of the maximum operating current density of the near-infrared perovskite light-emitting diode X3) is applied to the near-infrared perovskite light-emitting diode X3. The maximum operating current density of the near-infrared perovskite light-emitting diode X3 is 2500mA / cm². By transmitting photons of different wavelengths, a spectrometer is used to collect photon energy within the range The corresponding electroluminescence spectrum intensity set : .

[0099] The electroluminescence spectrum obtained by the spectrometer at an initial current density of 2.18mA / cm² is shown in Figure 8 shown.

[0100] (2) Preserve the electroluminescence spectrum intensity set Not less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. .

[0101] The electroluminescence spectrum intensity set retained in this embodiment The corresponding photon energy range is .

[0102] (3) According to the photon energy range The corresponding electroluminescence spectrum intensity set , multi-parameter fitting of the first nonlinear function is performed by the least squares method to obtain the temperature correction coefficient of the near-infrared perovskite material in the semiconductor electroluminescent device to be tested .

[0103] In this embodiment, the multi-parameter fitting is performed by the least square method, and the electroluminescence spectrum after fitting at the initial current density of 2.18 mA / cm² can be obtained, as shown in FIG. Fig. 9 As shown. And the temperature correction coefficient of the near-infrared perovskite material in the near-infrared perovskite light-emitting diode X3 is obtained It is 0.9109.

[0104] (4) Then, target current densities of 24.88, 89.08, 204.49, 377.93, 626.17, 1077.89, and 2090.44 mA / cm² were applied to the semiconductor electroluminescent device to be tested. Photons of different wavelengths were transmitted and the photon energy range under different target current densities was collected using a spectrometer. The corresponding electroluminescence spectrum intensity set.

[0105] The electroluminescence spectra collected by the spectrometer at different target current densities are shown in the figure below: Fig.10 shown.

[0106] (5) Obtaining the photon energy range that meets the requirements under different target current densities; and performing multi-parameter fitting on the second nonlinear function by the least squares method based on the set of electroluminescence spectrum intensities corresponding to the photon energy range that meets the requirements under different target current densities, and obtaining the temperature of the near-infrared perovskite material in the near-infrared perovskite light-emitting diode X3 to be 297.47K, 298.98K, 304.21K, 308.61K, 313.14K, 320.20K or 336.22K under different target current densities of 24.88, 89.08, 204.49, 377.93, 626.17, 1077.89, and 2090.44mA / cm².

[0107] The fitted electroluminescence spectra at different target current densities are shown in Figure 2. Fig.11 shown.

[0108] Table 2 shows the experimental results of near-infrared perovskite materials in near-infrared perovskite light-emitting diode X3 at different current densities. As can be seen from Table 2, at a relatively low voltage (i.e., a current density of 2.18 mA / cm²), due to the limited heat energy generated during the light-emitting process, the temperature of the near-infrared perovskite material is close to the ambient temperature, with almost no significant increase. However, with the gradual increase in voltage and corresponding current density, the temperature of the near-infrared perovskite material increases significantly, reaching a maximum of about 40 K higher than the ambient temperature, clearly revealing the direct effect of voltage increase on the temperature of the near-infrared perovskite material. This discovery provides important data support for a deeper understanding of the thermal management and performance optimization of near-infrared perovskite light-emitting diodes.

[0109] Table 2: Experimental results of near-infrared perovskite materials at different current densities in near-infrared perovskite light-emitting diode X3

[0110]

[0111] Embodiment 6: Corresponding to the aforementioned embodiment 2 of a semiconductor temperature measurement method based on electroluminescence spectroscopy, the present invention further provides an embodiment of a semiconductor temperature measurement device based on electroluminescence spectroscopy.

[0112] See also Fig.12 A semiconductor temperature measurement device based on electroluminescence spectroscopy provided in an embodiment of the present invention includes one or more processors for implementing a semiconductor temperature measurement method based on electroluminescence spectroscopy in the above embodiment.

[0113] An embodiment of a semiconductor temperature measurement device based on electroluminescence spectroscopy of the present invention can be applied to any device with data processing capabilities, and the device with data processing capabilities can be a device or apparatus such as a computer. The device embodiment can be implemented through software, or through hardware or a combination of software and hardware. Taking software implementation as an example, as a device in a logical sense, it is formed by the processor of any device with data processing capabilities in which it is located reading the corresponding computer program instructions in the non-volatile memory into the internal memory for execution. From a hardware perspective, if Fig.12 As shown in the figure, it is a hardware structure diagram of any device with data processing capability in which a semiconductor temperature measurement device based on electroluminescence spectroscopy of the present invention is located. Fig.12 In addition to the processor, memory, network interface, and non-volatile memory shown, any device with data processing capabilities in which the apparatus in the embodiments is located may also include other hardware, generally based on the actual functions of the device with data processing capabilities, which will not be described in detail.

[0114] The implementation process of the functions and effects of each unit in the above-mentioned device is specifically described in the implementation process of the corresponding steps in the above-mentioned method, and will not be repeated here.

[0115] For the device embodiment, since it basically corresponds to the method embodiment, the relevant parts can refer to the partial description of the method embodiment. The device embodiment described above is only schematic, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of the present invention. Ordinary technicians in this field can understand and implement it without paying creative work.

[0116] The embodiment of the present invention also provides a computer-readable storage medium, on which a program is stored. When the program is executed by a processor, a semiconductor temperature measurement method based on electroluminescence spectroscopy in the above embodiment is implemented. The computer-readable storage medium can be an internal storage unit of any device with data processing capability described in any of the above embodiments, such as a hard disk or a memory. The computer-readable storage medium can also be an external storage device of any device with data processing capability, such as a plug-in hard disk, a smart memory card (Smart Media Card, SMC), an SD card, a flash card (Flash Card), etc. equipped on the device. Further, the computer-readable storage medium can also include both an internal storage unit and an external storage device of any device with data processing capability. The computer-readable storage medium is used to store the computer program and other programs and data required by any device with data processing capability, and can also be used to temporarily store data that has been output or is to be output.

[0117] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A semiconductor temperature measurement method based on electroluminescence spectroscopy, characterized in that: The method is applied to a semiconductor temperature measurement device based on electroluminescence spectroscopy, and comprises the following steps: (1) At a known ambient temperature When the semiconductor electroluminescent device to be tested reaches thermal equilibrium with the known ambient temperature, an initial current density not exceeding 5% of the maximum operating current density is applied to the semiconductor electroluminescent device to be tested, and a spectrometer is used to collect the electroluminescent spectrum intensity set. , and keep no less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. ; (2) Based on the electroluminescence spectrum intensity set , multi-parameter fitting is performed on the first nonlinear function by the least square method to obtain the temperature correction coefficient of the semiconductor in the semiconductor electroluminescent device to be tested , the first nonlinear function is: （1）； in, is the Boltzmann constant; , and represent the proportionality coefficient at the initial current density, the optical band gap width of the semiconductor, and the Urbach energy of the conductor, respectively; express Any electroluminescence spectrum intensity in express The corresponding photon energy; (3) Then, the target current density is applied to the semiconductor electroluminescent device to be tested, and the electroluminescence spectrum intensity set is collected using a spectrometer. , and keep no less than The electroluminescence spectrum intensity of the maximum electroluminescence spectrum intensity is obtained, and the electroluminescence spectrum intensity set is obtained. ; (4) Based on the electroluminescence spectrum intensity set , the second nonlinear function is fitted with multiple parameters by the least squares method to obtain the temperature of the semiconductor in the semiconductor electroluminescent device to be tested at the target current density ; The second nonlinear function is: （2）； in, , and represent the proportionality coefficient at the target current density, the optical band gap width of the semiconductor, and the Urbach energy of the semiconductor, respectively; express Any electroluminescence spectrum intensity in express The corresponding photon energy.

2. A semiconductor temperature measurement method based on electroluminescence spectroscopy according to claim 1, characterized in that: The semiconductor temperature measurement device based on electroluminescence spectroscopy includes: an integrating sphere, an optical fiber and a spectrometer; The integrating sphere is used to collect photons of the electroluminescent device in different wavelength bands; The optical fiber is used to transmit the collected photons of different wavelengths; The spectrometer is used to measure the intensity information of spectra in different wavebands.

3. The semiconductor temperature measurement method based on electroluminescence spectroscopy according to claim 1, characterized in that: The semiconductor electroluminescent device is a light emitting diode, a solar cell, a photodetector, a semiconductor laser or a field effect transistor.

4. The semiconductor temperature measurement method based on electroluminescence spectroscopy according to claim 1, characterized in that: The semiconductor in the semiconductor electroluminescent device is a combination of one or more materials selected from organic-inorganic hybrid materials, inorganic compound materials, organic compound materials or low-dimensional semiconductor materials.

5. The semiconductor temperature measurement method based on electroluminescence spectroscopy according to claim 4, characterized in that: The organic-inorganic hybrid material is a combination of one or more materials selected from the group consisting of an organic cationic perovskite material, an organic-inorganic hybrid cationic perovskite material, a metal halide material, an organic rare earth composite material, or a metal-organic framework material.

6. The semiconductor temperature measurement method based on electroluminescence spectroscopy according to claim 4, characterized in that: The inorganic compound material is a combination of one or more materials selected from inorganic perovskite materials, nitrides, oxides, oxynitrides, II-VI group materials, IV group materials, III-V group compounds or rare earth materials.

7. The semiconductor temperature measurement method based on electroluminescence spectroscopy according to claim 4, characterized in that: The organic compound material is a combination of one or more materials selected from polycyclic aromatic hydrocarbons, organic small molecules, organic polymers, metal organic complexes or polymer semiconductors.

8. The semiconductor temperature measurement method based on electroluminescence spectroscopy according to claim 4, characterized in that: The low-dimensional semiconductor material is an organic cation perovskite material, an organic-inorganic hybrid cation perovskite material, a metal halide material, an organic rare earth composite material, a metal organic framework material, an inorganic perovskite material, a nitride, an oxide, a nitride oxide, a II-VI group material, a group IV material, a group III-V group compound, a rare earth material, a polycyclic aromatic hydrocarbon, an organic small molecule, an organic polymer, a metal organic complex or a polymer semiconductor, and is formed of any one of quantum dots, nanocrystals, nanowires or two-dimensional materials, or a combination of one or more of these materials.

9. A semiconductor temperature measurement device based on electroluminescence spectroscopy, characterized in that: It comprises a memory and one or more processors, wherein the memory stores executable codes, and when the one or more processors execute the executable codes, they are used to implement a semiconductor temperature measurement method based on electroluminescence spectroscopy as described in any one of claims 1 to 8.

10. A computer-readable storage medium, characterized in that: A program is stored thereon, and when the program is executed by a processor, a semiconductor temperature measurement method based on electroluminescence spectroscopy as described in any one of claims 1 to 8 is implemented.

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