Probe card production quality management method and system for chip wafer detection

Abstract

The present invention discloses a probe card production quality management method and system for chip wafer detection, which relates to the technical field related to production management. The method includes: reading the basic chip specifications and the target probe card customized based on batch production; improving the simulation test field based on the basic chip specifications and the target probe card; determining the multi-temperature zone detection environment, and combining the simulation test field to perform deformation detection and probe needle trace offset analysis of the target probe card; reading the test monitoring data, and performing conductive path and signal transmission analysis; determining the product yield and production constraints of the batch production line, and optimizing and determining the production control data; feeding back the production control data to the production control system for production and processing management. The method solves the technical problem that the existing probe card production management cannot meet the diversified test scenarios and long-term quality verification in actual quality inspection in a targeted manner, resulting in the inability to accurately perform real-time production processing control, which ultimately affects production quality.

Description

Technical Field

[0001] The present application relates to fields related to production management technology, and specifically to a production quality management method and system for probe cards used for chip wafer testing. Background Art

[0002] In recent years, with the continuous development and increasing intelligence of electronic products, the demand for chip wafers has also increased day by day. As a key link in the chip manufacturing process, wafer inspection is crucial to the quality and performance of the chip. Probe cards are important components required in the semiconductor wafer testing process. Due to the rapid development of semiconductor testing technology, the probe card industry has also developed rapidly. The specifications and characteristics of each chip vary greatly, and the corresponding probe card customization standards are different. At present, quality positioning is mainly carried out through the configured inspection and management devices combined with sample testing plans. However, the existing production quality management technology still has certain limitations, which cannot meet the diverse scenarios in actual testing, nor can it be used for long-term quality verification, resulting in the inability to implement targeted quality management and regulation, affecting the production quality of the product.

[0003] Therefore, at the current stage, there are technical problems in customer service management-related technologies that cannot specifically meet the diverse test scenarios and long-term quality verification in actual quality inspection, resulting in the inability to accurately perform real-time production processing control, which ultimately affects production quality. Summary of the invention

[0004] This application provides a probe card production quality management method and system for chip wafer detection, and adopts technical means such as simulated test fields, needle offset analysis, conductive path analysis, and signal transmission analysis to solve the technical problem that the existing probe card production management cannot meet the diverse test scenarios and long-term quality verification in actual quality inspection, resulting in the inability to accurately perform real-time production processing regulation, which ultimately affects the production quality. This application realizes accurate all-round quality inspection in diversified scenarios and accurate production and processing control, thereby improving the technical effect of production quality.

[0005] The present application provides a production quality management method for probe cards for chip wafer detection, which includes reading basic chip specifications and a target probe card customized based on batch production, wherein the target probe card meets the chip wafer testing requirements; based on the basic chip specifications and the target probe card, improving a simulation test field, wherein the simulation test field is constructed based on the linkage between a test machine and a probe station; determining a multi-temperature zone detection environment, and performing deformation detection and probe needle trace offset analysis on the target probe card in combination with the simulation test field, and determining structural stability characteristics based on the detection environment in each temperature zone; reading test monitoring data, performing conductive path and signal transmission analysis, and determining electrical characteristics; determining the product yield and production constraints of a batch production line, and optimizing and determining production control data in combination with the structural stability characteristics and the electrical characteristics; and feeding back the production control data to a production control system to perform production and processing management of the target probe card.

[0006] In a possible implementation, a multi-temperature zone detection environment is determined, and deformation detection of the target probe card is performed in combination with the simulated test field, and the following processing is performed: a preset detection environment is determined, and simulated parallel detection of chip wafers is performed based on a predetermined time interval to determine a first state detection trend; a chip wafer simulated test is performed using a multivariate detection environment, time flow rate variables, and test rate variables as model control factors to determine a second state detection trend; and product life characteristics are determined by combining the first state detection trend with the second state detection trend.

[0007] In a possible implementation, the probe needle trace offset analysis of the target probe card is performed in combination with the simulation test field, and the following processing is performed: the scene temperature used for chip wafer detection is retrieved to determine the multi-temperature zone detection environment that meets the generalization standard; the multi-temperature zone detection environment is traversed, and chip wafer simulation detection is performed in combination with the simulation test field, and test monitoring data is read; the test monitoring data is identified to determine the deformation characteristics of the probe card body and the probe contact deviation characteristics mapped by each temperature zone detection environment, wherein the contact deviation standard includes a first deviation threshold based on contact test stability and a second deviation threshold that causes damage to the circuit in the wafer.

[0008] In a possible implementation, after determining the probe card body deformation characteristics and probe contact deviation characteristics mapped by each temperature zone detection environment, the following processing is also performed: building a three-dimensional coordinate system with temperature, body deformation degree and contact deviation degree as coordinate axes; mapping the probe card body deformation characteristics and the probe contact deviation characteristics, distributing the three-dimensional coordinate system, and determining the spatial needle trace field; based on the spatial needle trace field, exploring the implicit relationship between temperature-body deformation and contact deviation; adding the spatial needle trace field and the implicit relationship into the structural stability characteristics.

[0009] In a possible implementation, the test monitoring data is read, the conductive path and signal transmission analysis is performed, the electrical characteristics are determined, and the following processing is performed: the test monitoring data is identified, the electrical connection state of the space conversion matrix is ​​determined, and the electrical connection state is marked with an ambient temperature zone; it is determined whether the electrical connection state meets the state threshold, and if not, a connection abnormality mark is generated; based on the connection abnormality mark, the electrical connection abnormality is traced to determine the first abnormal production feature and the first abnormal cause, and added into the electrical characteristics.

[0010] In a possible implementation, it is determined whether the electrical connection state meets the state threshold, and the following processing is also performed: if the electrical connection state meets the state threshold, electrical indicator mining is performed, wherein the electrical indicator at least includes the electronic connection distance and the test electrical signal transmission state; it is determined whether the electrical indicator meets the indicator threshold, and if not, an indicator abnormality mark is generated; based on the indicator abnormality mark, the electrical indicator abnormality is traced, and the obtained second abnormal production feature and second abnormal cause are added to the electrical characteristic.

[0011] In a possible implementation, the optimization determines the production control data and also performs the following processing: based on the structural stability characteristics, the electrical characteristics and the product life characteristics, the commonality of source characteristics is mined to determine the common calibration characteristics; based on the product yield and the production constraints of the production line, the optimization constraints are determined; the optimization priority based on the common calibration characteristics is set, and the non-common calibration characteristics are combined with the optimization constraints to perform production control optimization and optimal assimilation to determine the production control data that meets the preset iteration standards.

[0012] The present application also provides a probe card production quality management system for chip wafer detection, the system comprising:

[0013] A target probe card reading module, which is used to read the basic chip specifications and the customized target probe card based on batch production, and the target probe card meets the chip wafer testing requirements;

[0014] A simulation test field improvement module, the simulation test field improvement module is used to improve the simulation test field based on the basic chip specifications and the target probe card, the simulation test field is built based on the linkage between the test machine and the probe station;

[0015] A multi-temperature zone detection environment determination module, the multi-temperature zone detection environment determination module is used to determine the multi-temperature zone detection environment, perform deformation detection and probe needle trace deviation analysis of the target probe card in combination with the simulation test field, and determine the structural stability characteristics based on the detection environment of each temperature zone;

[0016] A production control data determination module, the production control data determination module is used to read the test monitoring data, perform conductive path and signal transmission analysis, determine electrical characteristics, determine the product yield of the batch production line and the production constraints of the production line, and combine the structural stability characteristics and the electrical characteristics to optimize and determine the production control data;

[0017] A production and processing management module is used to feed back the production control data to a production control system to perform production and processing management of the target probe card.

[0018] The probe card production quality management method and system for chip wafer detection proposed in this application are intended to read the basic chip specifications and the target probe card customized based on batch production; based on the basic chip specifications and the target probe card, improve the simulation test field; determine the multi-temperature zone detection environment, and conduct deformation detection and probe needle trace offset analysis of the target probe card in combination with the simulation test field, and determine the structural stability characteristics based on the detection environment of each temperature zone; read the test monitoring data, conduct conductive path and signal transmission analysis, and determine the electrical characteristics; determine the product yield and production constraints of the batch production line, and combine the structural stability characteristics with the electrical characteristics to optimize and determine the production control data; feed the production control data back to the production control system to carry out production and processing management of the target probe card, which solves the technical problem that the existing probe card production management cannot meet the diverse test scenarios and long-term quality verification in actual quality inspection in a targeted manner, resulting in the inability to accurately carry out real-time production processing control, which ultimately affects the production quality, and realizes accurate comprehensive quality inspection of diversified scenarios and accurate production and processing control, thereby improving the technical effect of production quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solution of the embodiment of the present disclosure, the accompanying drawings of the embodiment of the present disclosure will be briefly introduced below. A flow chart is used in the present application to illustrate the operations performed by the system according to the embodiment of the present application. It should be understood that the preceding or following operations are not necessarily performed accurately in order. On the contrary, various steps can be processed in reverse order or simultaneously as needed. At the same time, other operations can also be added to these processes, or one or more operations can be removed from these processes.

[0020] Figure 1 A schematic flow chart of a method for managing the production quality of a probe card for chip wafer testing provided in an embodiment of the present application;

[0021] Figure 2 A schematic diagram of a flow chart of needle trace deviation analysis in a probe card production quality management method for chip wafer detection provided in an embodiment of the present application;

[0022] Figure 3A schematic diagram of a process for determining electrical characteristics in a method for managing production quality of a probe card for chip wafer inspection provided in an embodiment of the present application;

[0023] Figure 4 A schematic diagram of the structure of a probe card production quality management system for chip wafer inspection provided in an embodiment of the present application.

[0024] Explanation of the reference numerals: target probe card reading module 10 , simulation test field improvement module 20 , multi-temperature zone detection environment determination module 30 , production control data optimization determination module 40 , production and processing management module 50 . DETAILED DESCRIPTION

[0025] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below.

[0026] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. The described embodiments should not be regarded as limiting the present application. All other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0027] In the following description, reference is made to "some embodiments", which describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without conflict, and the terms "first\second" involved are merely to distinguish similar objects and do not represent a specific ordering of objects. The terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or modules that are not clearly listed or inherent to these processes, methods, products, or devices. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by technicians in the technical field of this application. The terms used herein are for the purpose of describing the embodiments of the present application only.

[0028] The present application embodiment provides a probe card production quality management method for chip wafer detection, which is applied to a probe card production quality management system for chip wafer detection, such as Figure 1 As shown, the method includes:

[0029] Step S100, read the basic chip specifications and the target probe card customized based on batch production, the target probe card meets the chip wafer test requirements. Read the basic chip specifications and the target probe card customized based on batch production. Specifically, the basic chip specifications refer to the basic parameters and performance specifications of the chip, such as wafer diameter, chip size, chip electrical parameters, clock speed (the constant speed of the chip running inside, measuring the chip's running speed), storage capacity, etc. The target probe card is a batch customized test tool for chip wafer production testing, which is used to detect the chip. Since the pin arrangement, size, spacing change, frequency change, test current, test machine, etc. of each chip are different, customized probe cards are required for different chips. The target probe card meets the chip wafer test requirements, which means that the target probe card can accurately test and inspect the chip wafer to ensure the quality and performance of the chip. Specifically, the target probe card is a test interface instrument, which is mainly used for bare core testing. It connects the test machine and the chip to transmit electrical signals to test the chip parameters.

[0030] After obtaining the basic chip specifications and the customized target probe card, step S200 is executed to improve the simulation test field based on the basic chip specifications and the target probe card. The simulation test field is built based on the linkage between the test machine and the probe station. According to the basic specifications of the chip and the customized target probe card, the simulation test field is improved to simulate the chip test. Among them, the test machine and the probe station are linked to form a simulation test field. The test machine is a special equipment for testing and inspection. The test machine is used to simulate different test scenarios, detect the function and performance of the chip, and judge the effectiveness of the chip under different working conditions by comparing the output signal of the tested chip with the expected value. The probe station is a precision electronic testing equipment, mainly used for semiconductor industry, integrated circuit and packaging testing. After the chip wafer is processed, it is responsible for the transportation and positioning of the wafer to ensure that a more stable signal is transmitted from the wafer surface to the precision instrument, so that the grains on the wafer are contacted and tested with the probe in turn, so as to achieve more accurate data testing. The probe station includes a stage, optical elements, chucks, probe cards, probe fixtures and cable assemblies. Specifically, according to the specific specifications of the chip and the target probe card, combined with the simulation test field constructed by the test machine and the probe station, a comprehensive test of the chip wafer is completed.

[0031] After the simulation test field is perfected, step S300 is executed to determine the multi-temperature zone detection environment, and the deformation detection and probe needle trace offset analysis of the target probe card are performed in combination with the simulation test field to determine the structural stability characteristics based on the detection environment of each temperature zone. Determine the detection environment of multiple different temperature zones, and perform deformation detection and probe needle trace offset analysis on the target probe card in combination with the perfect simulation test field to evaluate the structural stability of the target probe card under different temperature zone detection environments. Specifically, the detection environment of different temperatures can be used to test the performance of the target probe card at different temperatures and evaluate the stability of the probe pin contact. Deformation detection mainly refers to the physical deformation of the target probe card in the test environment of different temperatures, especially whether the probe will deform in high or low temperature environments. Probe needle trace offset analysis refers to the position offset of the pin of the target probe in different temperature environments to evaluate the contact stability between the probe and the chip. Deformation detection and probe needle trace analysis are performed in different temperature environments to evaluate the structural stability of the target probe in each temperature zone detection environment, including the physical deformation of the target probe and the stability of the probe.

[0032] In one possible implementation, Figure 2As shown, step S300 further includes step S310, determining a preset detection environment, performing simulated parallel detection of chip wafers based on a predetermined time interval, and determining a first state detection trend. Establish a preset detection environment, perform simulated parallel detection of chip wafers at a predetermined time interval, and determine a first state detection trend, wherein simulated parallel detection refers to performing parallel detection of multiple tested chip wafers under the same conditions at the same time in chip wafer testing to evaluate the performance differences between different samples. Specifically, the conditions of the preset detection environment may include temperature, humidity, magnetic field, etc., to ensure environmental consistency and repeatability during chip wafer detection. Under the preset environment, multiple chip wafers are tested and inspected, and the same time interval is used to observe the changes in chip wafers. By analyzing the test data of chip wafers at different time points, the change trend of the chip state is obtained as the first state detection trend. It also includes step S320, using multivariate detection environment, time flow rate variables and test rate variables as model control factors, performing chip wafer simulation testing, and determining the second state detection trend. Taking the multivariate detection environment, time flow rate variable and test rate variable as the model control factors, the performance changes of the chip under different conditions are evaluated by regulating these factors, and the second state detection trend is determined. Specifically, the multivariate detection environment includes multiple different detection environments such as temperature and humidity; the time flow rate variable refers to the performance change trend of the chip wafer test process over time; the test rate variable refers to the rate of change of certain parameter indicators over time during the chip wafer test process. With the increase in the number of detections, the chip wafer has certain losses, precision attenuation, etc., and the detection state trend analysis under the timing is performed. It also includes step S330, combining the first state detection trend with the second state detection trend to determine the product life characteristics. Combined with the determined first state detection trend and second state detection trend, the life characteristics of the probe card product are determined. Specifically, based on the same scene and the changed scene, the detection state of the probe card is checked, and the probe card life positioning is performed in combination with the state detection trend, that is, the service life of the probe card is determined.

[0033] In a possible implementation, step S300 combines the simulation test field to perform deformation detection and probe needle trace offset analysis of the target probe card, and also includes step S340, retrieving the scene temperature for chip wafer detection, and determining the multi-temperature zone detection environment that meets the generalization standard. When performing chip wafer testing, it is necessary to determine the test environment under different temperature conditions to meet the multi-temperature zone detection environment of the generalization standard. Specifically, when performing chip wafer testing, it is necessary to consider multiple temperature zones to simulate the performance of chips under different operating temperatures, by retrieving different temperature conditions suitable for chip wafer testing, and determining a multi-temperature zone detection environment that can cover these temperature conditions. It also includes S350, traversing the multi-temperature zone detection environment, combining the simulation test field to perform chip wafer simulation detection, and reading test monitoring data. Traverse the chip wafer in the multi-temperature zone detection environment and combine the simulation test field to perform simulation detection to obtain test monitoring data, wherein simulation detection refers to testing the chip wafer in a simulated real environment. The method further includes step S360, identifying the test monitoring data, determining the deformation characteristics of the probe card body and the deviation characteristics of the probe contact mapped to each temperature zone detection environment, wherein the contact deviation standard includes a first deviation threshold based on the contact test stability and a second deviation threshold that causes damage to the circuit in the wafer. Specifically, the test monitoring data is analyzed to determine the deformation characteristics of the probe card body and the deviation characteristics of the probe contact in each temperature zone detection environment, and the deformation characteristics may include the physical deformation of the probe card, the degree of deformation, and the deformation trend at different temperatures, etc. The probe contact deviation characteristics refer to the position deviation characteristics that may occur in different temperature environments of the probe contact. As the temperature changes, the position of the probe contact will deviate slightly or change. The contact deviation standard includes a first deviation threshold based on the contact test stability and a second deviation threshold that causes damage to the circuit in the wafer, wherein the first deviation threshold refers to the first threshold of the deviation of the probe contact position. If the deviation of the probe contact exceeds the first deviation threshold, it will affect the stability of the contact test and needs to be processed in time; the second deviation threshold is the second threshold of the deviation of the probe contact. If the deviation of the probe contact exceeds the second deviation threshold, it will cause damage to the circuit in the wafer.

[0034] In one possible implementation, after step S360 determines the deformation characteristics of the probe card body and the probe contact deviation characteristics mapped by each temperature zone detection environment, it also includes step S361, using temperature, body deformation and contact deviation as coordinate axes to build a three-dimensional coordinate system. The body deformation depends on the base material. The expansion and deformation of the base under the influence of temperature is one of the factors affecting the contact state of the probe, resulting in poor contact. A three-dimensional coordinate system is built with ambient temperature, body deformation and contact deviation as coordinate axes, wherein the body deformation is used to indicate the magnitude of the deformation degree of the base; the contact deviation is used to indicate the magnitude of the probe contact deviation position. It also includes step S362, mapping the deformation characteristics of the probe card body and the probe contact deviation characteristics, distributing the three-dimensional coordinate system, and determining the spatial needle trace field. The deformation characteristics of the probe card body and the deviation characteristics of the probe contact are mapped to the constructed three-dimensional coordinate system, and distributed to determine the probe needle trace field in the three-dimensional space. Specifically, the deformation characteristics of the probe card body and the deviation characteristics of the probe contact are correlated and analyzed in the three-dimensional coordinate system to determine the correlation relationship. For example, the specific deviation of the probe contact under different deformation characteristics may be analyzed, or the correlation between the deformation characteristics and the deviation characteristics may be evaluated, and the three-dimensional coordinate system is used to represent the spatial distribution of the probe card deformation and the probe contact deviation at different temperatures. It also includes step S363, based on the spatial needle trace field, mining the implicit relationship between temperature-body deformation and contact deviation. Specifically, the determined spatial needle trace field is mined and analyzed to find the implicit relationship between temperature-body deformation and contact deviation. For example, the higher the temperature, the greater the deformation of the body, and the farther the position of the probe contact deviates. On the contrary, the lower the temperature, the smaller the deformation of the body, and the closer the position of the probe contact deviates. It also includes step S364, adding the spatial needle trace field and the implicit relationship into the structural stability characteristics. Specifically, the spatial needle track field and the implicit relationship between temperature-deformation and contact deviation are added to the structural stability characteristics of the probe card, and an integrated analysis is performed with them to obtain the structural stability of the probe card under different temperature environments and deformation conditions.

[0035] After determining the structural stability based on the detection environment of each temperature zone, execute step S400, read the test monitoring data, perform conductive path and signal transmission analysis, and determine the electrical characteristics. Read the monitoring data of the chip test to obtain relevant electrical parameters, such as conductivity, resistance, reflection and attenuation of the transmission line, etc., perform conductive path analysis, that is, analyze the conductive path of the current in the chip wafer under test. Specifically, track and analyze the path of current transmission in different parts to determine the characteristics of the conductive path; perform transmission signal analysis, that is, evaluate the characteristics of the signal when it is transmitted in the chip wafer under test, including transmission speed, attenuation, transmission distortion, etc., to determine the stability of the transmission characteristics of the signal during transmission. Based on the results of the conductive path and signal transmission analysis, determine the electrical characteristics of the chip wafer under test, that is, determine the performance and performance of the chip wafer in terms of circuits, conduction and signal transmission.

[0036] In one possible implementation, Figure 3 As shown, step S400 reads the test monitoring data, performs conductive path and signal transmission analysis, and determines the electrical characteristics. It also includes step S410, identifying the test monitoring data, determining the electrical connection state of the space conversion matrix, and the electrical connection state is marked with an ambient temperature zone. Identify the acquired test monitoring data, and use these monitoring data to determine the electrical connection state of the space conversion matrix, and at the same time identify the ambient temperature zone in the electrical connection state, wherein the space conversion matrix is ​​the core component of the probe card, which is used to provide electrical connection between the chip wafer and the test instrument, and at the same time transmit electrical signals. Specifically, identify and collect monitoring data related to the space conversion matrix, determine the electrical connection state of the space conversion matrix, including the connection status, conduction state, voltage / current transmission and other information between each circuit element, associate the electrical connection state with the ambient temperature zone, and identify the electrical connection state under different temperature zones. It also includes step S420, determining whether the electrical connection state meets the state threshold, and if not, generating a connection abnormality mark. The electrical connection state determined by identification is used for evaluation, and the actual connection state is compared with the state threshold. If the electrical connection state does not meet the preset state threshold, a mark of connection abnormality is generated to mark the connection abnormality in time. It also includes step S430, based on the connection abnormality mark, tracing the source of the electrical connection abnormality, determining the first abnormal production feature and the first abnormal cause, and adding them into the electrical characteristics. According to the mark of the connection abnormality, the abnormal electrical connection is traced back to the specific time point, location, etc., to find out the specific situation of the connection abnormality, so as to determine the first abnormal production feature and the first abnormal cause, and add them into the electrical characteristics to update the electrical characteristics, wherein the first abnormal production feature is a first abnormal feature related to production including voltage abnormality, current abnormality or connection interruption, and the first abnormal cause is the biggest cause of the electrical connection abnormality.

[0037] In a possible implementation, step S420 determines whether the electrical connection state meets the state threshold, and also includes step S421, if the electrical connection state meets the state threshold, electrical indicator mining is performed, wherein the electrical indicator at least includes the electronic connection distance and the test electrical signal transmission state. If the electrical connection state meets the preset state threshold, electrical indicator mining is performed, wherein the electrical indicator includes the electronic connection distance, the test electrical signal transmission state, and other related information of electrical parameters, etc. The space conversion matrix can perform probe spacing conversion and transmit the test electrical signal to the tester. It also includes step S422, determining whether the electrical indicator meets the indicator threshold, if not, generating an indicator abnormality mark. If it is determined that the electrical indicator does not meet the indicator threshold, a mark of indicator abnormality is generated. It also includes step S423, based on the indicator abnormality mark, the electrical indicator abnormality is traced, and the second abnormal production feature and the second abnormal inducement obtained are added to the electrical characteristics. According to the abnormal indicator mark, the electrical indicator abnormality is traced to obtain the second abnormal production feature and the second abnormal inducement, and added into the electrical characteristics. Among them, the telecommunication indicator abnormality refers to the abnormal electronic connection spacing or the abnormal test electrical signal transmission, for example, the chip package or the pin spacing between the plug-in components is abnormal, the spacing between different electronic devices (capacitors, inductors, diodes and other components), the solder joint spacing is abnormal, the waveform of the output electrical signal is abnormal, the transmission rate is abnormal, the transmission frequency is abnormal, etc. The second abnormal production feature refers to these abnormal electronic connection spacing or abnormal test electrical signal transmission, and the second abnormal inducement is the cause of these electrical indicator abnormalities.

[0038] After the electrical characteristics are determined, step S500 is then performed to determine the product yield of the batch production line and the production constraints of the production line, and the production control data is optimally determined by combining the structural stability characteristics and the electrical characteristics. When it is necessary to optimize the production control data, determine the product yield and production constraints of the batch production line, and combine the structural stability characteristics and electrical characteristics. Specifically, in the production process, combine the structural stability and electrical characteristics of the product target probe card to determine the product yield and production constraints of the production line. By optimizing the production control parameters, optimize the production control data. By collecting and analyzing the production data, determine the product yield of the target probe card of the batch production line, that is, the ratio of qualified products to the total product output, find out the problems that may cause product quality in production, and identify the production constraints of the production line, such as equipment capacity constraints, process restrictions, etc. By combining the structural characteristics and electrical characteristics of the product target probe card, appropriate production control data can be determined for the key links in the production process, including process parameters, production specifications, equipment operation requirements, etc., such as information on material selection, processing parameters, quality control standards, etc., to guide production practice and optimize production efficiency and product quality. Optimize and determine the production control data to ensure that the product probe card can maintain high quality and high stability during the production process, thereby improving the production capacity and efficiency of the production line.

[0039] In a possible implementation, the optimization determination of production control data in step S500 also includes step S510, based on the structural stability characteristics, the electrical characteristics and the product life characteristics, the source characteristics commonality mining is performed to determine the common calibration characteristics. According to the structural stability characteristics, electrical characteristics and product life characteristics of the probe card, analysis and mining are performed to determine the relevant characteristics that exist in different batches of products for product performance calibration. For example, the fatigue life of the material, the change in ambient temperature and humidity, the accuracy of process control, etc. may affect the three characteristics of the probe card at the same time. In this process, the structural, electrical and life characteristics of the product are comprehensively analyzed and mined to determine the characteristics that are common in different products or have a greater impact on product performance. These common calibration characteristics can be used as the basis for product design, manufacturing and quality control, and are used to guide process optimization, product performance improvement and quality management in the production process. It also includes step S520, based on the product yield and the production constraints of the production line, to determine the optimization constraints. According to the product yield of the probe card and the production constraints of the production line, the constraints for optimizing the production control parameters in the production process are determined, such as the maximum working time and maximum load of the production equipment to ensure the normal operation of the equipment and avoid excessive operation leading to a decline in production quality; the supply and inventory of raw materials are determined to ensure a stable and timely supply of raw materials, etc. It also includes step S530, setting the optimization priority based on the common calibration features, combining the non-common calibration features, and combining the optimization constraints to perform production control optimization and optimal assimilation, and determine the production control data that meets the preset iteration standards. According to the common calibration features and non-common calibration features, production control optimization and optimization assimilation are carried out in combination with optimization constraints to determine the production control data that meets the preset iteration standards. Specifically, the priority of the common calibration features is first determined to determine the processing order and optimization focus for different features, and then combined with the non-common calibration features, collaborative optimization between different features is considered. For example, when performing production control, when common calibration features and non-common calibration features overlap, optimization control of common features is prioritized to achieve better production control effects. At the same time, based on production optimization constraints, the feasibility and stability of production control are ensured. In the process of optimizing production control, it is ensured that the common calibration features and non-common calibration features are effectively implemented and assimilated. Finally, the production control data required to meet the pre-set iteration standards is determined. These data serve as the basis for production control to ensure the stability and optimization effect of the production process.

[0040] In one possible implementation, when optimizing common calibration features and non-common calibration features in step S530, all common calibration features and non-common calibration features can be treated as individual data, respectively, and combined into a feature data set. A fitness function that measures the calibration features for the target probe card production quality is constructed to evaluate the quality of these calibration features. The larger the fitness function value, the better the calibration feature, which means that the calibration feature has the greatest impact on the probe card production quality. Each time, the calibration feature with the maximum fitness is selected for production regulation and removed from the feature data set. The feature data set is optimized until all calibration features are used for production regulation of the probe card.

[0041] Finally, step S600 is executed to feed back the production control data to the production control system to perform production and processing management of the target probe card. In production control, the production control data is fed back to the production control system, and the production and processing management of the target probe card is performed, wherein the production control system is an integrated information management system that can receive, store, and process the production control data, and perform production and processing management of the probe card according to the control data. Specifically, the determined production control data is transmitted to the production control system, and the production control system makes decisions to adjust the control parameters in the production process of the probe card, optimize the production process, and improve production efficiency and probe card production quality.

[0042] In the above, refer to Figure 1 The probe card production quality management method for chip wafer detection according to an embodiment of the present invention is described in detail. Figure 4 A probe card production quality management system for chip wafer inspection according to an embodiment of the present invention is described.

[0043] The probe card production quality management system for chip wafer detection according to the embodiment of the present invention is used to solve the technical problem that the existing probe card production management cannot meet the diversified test scenarios and long-term quality verification in actual quality inspection, resulting in the inability to accurately perform real-time production processing control, which ultimately affects the production quality. It realizes the technical effect of accurately performing comprehensive quality inspections in diversified scenarios and accurate production and processing control, and improving production quality. The probe card production quality management system for chip wafer detection includes: a target probe card reading module 10, a simulation test field improvement module 20, a multi-temperature zone detection environment determination module 30, a production control data optimization determination module 40, and a production and processing management module 50.

[0044] A target probe card reading module 10, wherein the target probe card reading module 10 is used to read the basic chip specifications and the target probe card customized based on batch production, wherein the target probe card meets the chip wafer testing requirements;

[0045] A simulation test field improvement module 20, the simulation test field improvement module 20 is used to improve the simulation test field based on the basic chip specifications and the target probe card, the simulation test field is built based on the linkage between the test machine and the probe station;

[0046] A multi-temperature zone detection environment determination module 30, the multi-temperature zone detection environment determination module 30 is used to determine a multi-temperature zone detection environment, perform deformation detection and probe needle trace deviation analysis of the target probe card in combination with the simulated test field, and determine structural stability characteristics based on the detection environment of each temperature zone;

[0047] The production control data optimization determination module 40 is used to read the test monitoring data, perform conductive path and signal transmission analysis, determine electrical properties, determine the product yield of the batch production line and the production constraints of the production line, and optimize and determine the production control data in combination with the structural stability characteristics and the electrical properties;

[0048] The production and processing management module 50 is used to feed back the production control data to a production control system to perform production and processing management of the target probe card.

[0049] The specific configuration of the multi-temperature zone detection environment determination module 30 will be described in detail below. As described above, in combination with the simulation test field to perform deformation detection of the target probe card, the multi-temperature zone detection environment determination module 30 may further include: determining a preset detection environment, performing simulated parallel detection of chip wafers based on a predetermined time interval, and determining a first state detection trend; using a multivariate detection environment, a time flow rate variable, and a test rate variable as model control factors, performing a chip wafer simulated test, and determining a second state detection trend; combining the first state detection trend with the second state detection trend, determining product life characteristics.

[0050] The specific configuration of the multi-temperature zone detection environment determination module 30 will be described in detail below. As described above, the probe needle trace deviation analysis of the target probe card is performed in combination with the simulated test field, and the multi-temperature zone detection environment determination module 30 further includes: retrieving the scene temperature for chip wafer detection, and determining the multi-temperature zone detection environment that meets the generalization standard; traversing the multi-temperature zone detection environment, performing chip wafer simulation detection in combination with the simulated test field, and reading the test monitoring data; identifying the test monitoring data, and determining the deformation characteristics of the probe card body and the probe contact deviation characteristics mapped by each temperature zone detection environment, wherein the contact deviation standard includes a first deviation threshold based on contact test stability and a second deviation threshold that causes damage to the circuit in the wafer.

[0051] The specific configuration of the multi-temperature zone detection environment determination module 30 will be described in detail below. As described above, after determining the probe card body deformation characteristics and probe contact deviation characteristics mapped by each temperature zone detection environment, the multi-temperature zone detection environment determination module 30 may further include: building a three-dimensional coordinate system with temperature, body deformation degree and contact deviation degree as coordinate axes; mapping the probe card body deformation characteristics and the probe contact deviation characteristics, distributing the three-dimensional coordinate system, and determining the spatial needle trace field; based on the spatial needle trace field, exploring the implicit relationship between temperature-body deformation and contact deviation; adding the spatial needle trace field and the implicit relationship into the structural stability characteristics.

[0052] The specific configuration of the production control data optimization determination module 40 will be described in detail below. As described above, the test monitoring data is read, the conductive path and signal transmission analysis is performed, and the electrical characteristics are determined. The production control data optimization determination module 40 further includes: identifying the test monitoring data, determining the electrical connection state of the space conversion matrix, and the electrical connection state is marked with an ambient temperature zone; determining whether the electrical connection state meets the state threshold, and if not, generating a connection abnormality mark; based on the connection abnormality mark, tracing the electrical connection abnormality, determining the first abnormal production feature and the first abnormal cause, and adding the electrical characteristics.

[0053] The specific configuration of the production control data optimization determination module 40 will be described in detail below. As described above, it is determined whether the electrical connection state meets the state threshold, and the production control data optimization determination module 40 further includes: if the electrical connection state meets the state threshold, electrical index mining is performed, wherein the electrical index at least includes the electronic connection spacing and the test electrical signal transmission state; it is determined whether the electrical index meets the index threshold, and if not, an index abnormality mark is generated; based on the index abnormality mark, the electrical index abnormality is traced, and the second abnormal production feature and the second abnormal cause obtained are added to the electrical characteristic.

[0054] The specific configuration of the production control data optimization determination module 40 will be described in detail below. As described above, the production control data is optimized and determined, and the production control data optimization determination module 40 may further include: based on the structural stability characteristics, the electrical characteristics and the product life characteristics, the source feature commonality mining is performed to determine the common calibration features; based on the product yield and the production constraints of the production line, the optimization constraints are determined; the optimization priority based on the common calibration features is set, and the non-common calibration features are combined with the optimization constraints to perform production control optimization and optimal assimilation, and determine the production control data that meets the preset iteration standards.

[0055] The probe card production quality management system for chip wafer detection provided in the embodiment of the present invention can execute the probe card production quality management method for chip wafer detection provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0056] Although the present application makes various references to certain modules in the system according to the embodiments of the present application, any number of different modules may be used and run on the user terminal and / or server, and the various units and modules included are only divided according to functional logic, but are not limited to the above division, as long as the corresponding functions can be achieved; in addition, the specific names of the functional units are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of the present invention.

[0057] The above specific implementations do not constitute a limitation on the protection scope of this application. It should be understood by those skilled in the art that various modifications, combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of this application should be included in the protection scope of this application.

Claims

1. A probe card production quality management method for chip wafer detection, characterized in that: The method comprises: Read the basic chip specifications and produce customized target probe cards based on batch production, which meet the chip wafer testing requirements; Based on the basic chip specifications and the target probe card, a simulation test field is improved, and the simulation test field is built based on the linkage between the test machine and the probe station; Determine a multi-temperature zone detection environment, perform deformation detection and probe needle trace deviation analysis of the target probe card in combination with the simulated test field, and determine structural stability characteristics based on the detection environment of each temperature zone; Read test monitoring data, perform conductive path and signal transmission analysis, and determine electrical characteristics; Determine the product yield and production constraints of the batch production line, and optimize and determine the production control data by combining the structural stability characteristics and the electrical characteristics; Feeding back the production control data to a production control system to perform production and processing management of the target probe card; The method further comprises: Determine a preset detection environment, perform simulated parallel detection of chip wafers based on a predetermined time interval, and determine a first state detection trend; Using multivariate detection environment, time flow rate variables and test rate variables as model control factors, simulated chip wafer testing is performed to determine the second state detection trend; Determine a product life characteristic by combining the first state detection trend and the second state detection trend; Performing a probe needle trace deviation analysis of the target probe card, the method further comprising: Retrieving scene temperatures for chip wafer testing, and determining the multi-temperature zone testing environment that meets the generalization standard; Traversing the multi-temperature zone detection environment, performing chip wafer simulation detection in combination with the simulated test field, and reading test monitoring data; Identify the test monitoring data, determine the deformation characteristics of the probe card body and the deviation characteristics of the probe contact points mapped by the detection environment of each temperature zone, wherein the contact deviation standard includes a first deviation threshold value based on the contact test stability and a second deviation threshold value causing damage to the circuit in the wafer; After determining the deformation characteristics of the probe card body and the deviation characteristics of the probe contact points mapped by the detection environment in each temperature zone, the method further includes: A three-dimensional coordinate system is constructed with temperature, body deformation and contact deviation as coordinate axes; Mapping the deformation characteristics of the probe card body and the deviation characteristics of the probe contact points, distributing the three-dimensional coordinate system, and determining a spatial needle track field; Based on the spatial stitch field, the implicit relationship between temperature-body deformation and contact deviation is explored; The spatial stitch field and the implicit relationship are added to the structural stability properties.

2. The method according to claim 1, characterized in that Reading test monitoring data, performing conductive path and signal transmission analysis, and determining electrical characteristics, the method further includes: Identifying the test monitoring data, determining the electrical connection state of the space conversion matrix, wherein the electrical connection state is marked with an ambient temperature zone; Determining whether the electrical connection state meets a state threshold, and if not, generating a connection abnormality mark; Based on the abnormal connection mark, the electrical connection abnormality is traced, the first abnormal production feature and the first abnormal cause are determined, and the electrical characteristics are added.

3. The method according to claim 2, characterized in that Determining whether the electrical connection state meets a state threshold, the method further includes: If the electrical connection state meets the state threshold, electrical index mining is performed, wherein the electrical index at least includes an electronic connection distance and a test electrical signal transmission state; Determine whether the electrical index meets the index threshold, and if not, generate an index abnormality mark; Based on the abnormal indicator mark, the abnormal electrical indicator is traced to the source, and the obtained second abnormal production feature and the second abnormal cause are added to the electrical characteristics.

4. The method according to claim 1, characterized in that The method of optimizing and determining production control data further includes: Based on the structural stability characteristics, the electrical characteristics and the product life characteristics, commonality mining of source characteristics is performed to determine common calibration characteristics; Determining optimization constraints based on the product yield and the production constraints of the production line; The optimization priority based on the common calibration features is set, and the non-common calibration features are combined with the optimization constraints to perform production control optimization and optimal assimilation, and determine the production control data that meets the preset iteration standard.

5. A probe card production quality management system for chip wafer testing, characterized in that: The system is used to implement the probe card production quality management method for chip wafer detection according to any one of claims 1 to 4, and the system includes: A target probe card reading module, which is used to read the basic chip specifications and the customized target probe card based on batch production, and the target probe card meets the chip wafer testing requirements; A simulation test field improvement module, the simulation test field improvement module is used to improve the simulation test field based on the basic chip specifications and the target probe card, the simulation test field is built based on the linkage between the test machine and the probe station; A multi-temperature zone detection environment determination module, the multi-temperature zone detection environment determination module is used to determine the multi-temperature zone detection environment, perform deformation detection and probe needle trace deviation analysis of the target probe card in combination with the simulation test field, and determine the structural stability characteristics based on the detection environment of each temperature zone; A production control data determination module, the production control data determination module is used to read the test monitoring data, perform conductive path and signal transmission analysis, determine electrical characteristics, determine the product yield of the batch production line and the production constraints of the production line, and combine the structural stability characteristics and the electrical characteristics to optimize and determine the production control data; A production and processing management module is used to feed back the production control data to a production control system to perform production and processing management of the target probe card.

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