Cleaning method of cathode of magnetron sputtering equipment

Abstract

The present application discloses a method for cleaning the cathode of a magnetron sputtering device, comprising: step S10, using a conveying mechanism to convey a first baffle to a corresponding position of the process chamber, and introducing a sputtering gas into the process chamber; step S20, placing the cathode in a first working state, and performing a first sputtering coating on a second baffle pre-fixed in the process chamber; step S30, rotating the cathode magnetic bar 180 degrees, placing the cathode in a second working state, and performing a second sputtering coating on the first baffle; step S40, alternately performing step S20 and step S30 until the cleaning is completed; step S50, removing the first baffle from the process chamber. The present application can effectively prevent deformation of each baffle due to high temperature by alternately sputtering the first baffle and the second baffle, and is beneficial to improving the efficiency of cleaning the cathode of the device.

Description

Technical Field

[0001] The present application relates to the technical field of magnetron sputtering, and in particular to a method for cleaning the cathode of a magnetron sputtering device. Background Art

[0002] Magnetron sputtering technology refers to the process of ionizing gas by applying an electric field in a vacuum environment. The ionized ions fly toward and bombard the cathode under the action of the electric field or magnetic field, causing sputtering on the surface of the cathode. It is widely used in the field of film coating. Magnetron sputtering equipment usually includes a process chamber and a cathode arranged relative to the process chamber. The cathode is, for example, a rotating cathode, including a cylindrical target material and a cathode magnetic rod arranged inside the target material. The workpiece to be plated is conveyed to the process chamber for coating.

[0003] To ensure the coating effect, the cathode needs to clean the target surface before coating the workpiece to be plated. In the prior art, the cleaning method is mainly through pre-sputtering, that is, a substrate is transferred into the process chamber, and the target is cleaned by sputtering. Sputtering is divided into continuous sputtering and intermittent sputtering. Among them, continuous sputtering has the problem of high temperature causing serious deformation of the pre-sputtering plate, which affects the entry and exit of the process chamber. Intermittent sputtering has the problem of long cleaning time, resulting in low cleaning efficiency. Summary of the invention

[0004] In view of the problems in the prior art, the present application provides a method for cleaning the cathode of a magnetron sputtering device to improve the cleaning efficiency of the target material.

[0005] The cleaning method of the cathode of the magnetron sputtering device in the present application comprises a process chamber and a conveying mechanism in which the cathode is built-in, the cathode comprises a target material and a cathode magnetic rod rotatably arranged inside the target material, the cathode has a first working state and a second working state in which the magnetic field directions are opposite, and the cleaning method comprises the following steps:

[0006] Step S10, using a conveying mechanism to convey the first baffle to a corresponding position of the process chamber;

[0007] Step S20, injecting a sputtering gas into the process chamber and placing the cathode in a first working state, performing a first sputtering coating on a second baffle pre-fixed in the process chamber;

[0008] Step S30, rotating the cathode magnetic bar by 180 degrees, so that the cathode is in a second working state to perform a second sputtering coating on the first baffle;

[0009] Step S40, alternately performing step S20 and step S30 until cleaning is completed;

[0010] Step S50: moving the first baffle out of the process chamber.

[0011] Several optional methods are also provided below, but they are not intended to be additional limitations on the above-mentioned overall solution, but are merely further supplements or preferences. Under the premise that there are no technical or logical contradictions, each optional method can be combined with the above-mentioned overall solution separately, and multiple optional methods can also be combined.

[0012] Optionally, the first baffle is insulated, the cathode is connected to the negative pole of the power supply, and the second baffle is grounded.

[0013] Optionally, the ratio of the first sputtering coating time to the second sputtering coating time in a single alternation is 1-3:1.

[0014] Optionally, the entire cleaning process includes a plurality of discharge cycles, each of which includes a first stage and a second stage, in which the cathode power is gradually increased from an initial power in the first stage, and the power of the subsequent sputtering coating is not less than the power of the previous sputtering coating, and the second stage is entered after reaching a preset power, in which the cathode maintains the preset power for sputtering coating;

[0015] When the temperature of the first baffle reaches a preset temperature, the next discharge cycle begins.

[0016] Optionally, in each discharge cycle, the first sputtering coating and the second sputtering coating are alternated successively as the discharge power changes; or

[0017] In each discharge cycle, the first stage performs a first sputtering coating, and the second stage performs a second sputtering coating.

[0018] Optionally, the initial power is 0.8-5KW, the preset power is 50KW-60KW, and the preset temperature of the first baffle is 80-150°C.

[0019] Optionally, the first sputtering coating time and the second sputtering coating time are both 100-1200 seconds.

[0020] Optionally, the first sputtering coating time and the second sputtering coating time both decrease continuously with the increase of discharge power in the first time period.

[0021] Optionally, during the first sputtering coating and the second sputtering coating, the cathode magnetic bar is swung with an amplitude of 40° to 90°.

[0022] Optionally, a plurality of cathodes are provided and are arranged at intervals along the conveying direction of the first baffle, and sputtering gas is fed into the process chamber from the interval area between two adjacent cathodes.

[0023] Optionally, the second baffle is a cover structure that semi-surrounds the cathode.

[0024] Compared with the prior art, the present application rotates the cathode magnetic bar to change the direction of the magnetic field during the process of cleaning the target material, and sputters and coats the first baffle and the second baffle alternately, thereby improving the cleaning efficiency and effectively preventing the baffles from being deformed by high temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a flow chart of a cleaning method in one embodiment of the present application;

[0026] Figure 2 A cross-sectional view of a first baffle, a second baffle, and a magnetron sputtering device in one embodiment of the present application;

[0027] Figure 3 for Figure 2 A partial enlarged view of

[0028] Figure 4 A schematic diagram of the internal structure of a cathode in an embodiment of the present application;

[0029] Figure 5 This is a schematic diagram of the structure of the cathode, the first motor and the second motor in one embodiment of the present application;

[0030] Figure 6 This is a cathode discharge variation diagram in Application Example 1 of this application;

[0031] Figure 7 Another variation diagram of cathode discharge in Application Example 1 of this application;

[0032] Figure 8 Another variation diagram of cathode discharge in Application Example 1 of this application;

[0033] Fig. 9 This is a cathode discharge variation diagram in Application Example 2 of this application;

[0034] Fig.10 Another variation diagram of cathode discharge in Application Example 2 of this application;

[0035] Fig.11 This is another variation diagram of cathode discharge in Application Example 2 of the present application.

[0036] The reference numerals in the figures are described as follows:

[0037] 100, first baffle; 200, second baffle; 300, magnetron sputtering equipment; 310, process chamber; 320, cathode; 321, target material; 322, cathode magnetic rod; 323, first rotating shaft; 330, gas distribution pipe; 340, first motor; 350, second motor. DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0039] It should be noted that when a component is referred to as being "connected" to another component, it may be directly connected to the other component or there may be a central component. When a component is referred to as being "disposed on" another component, it may be directly disposed on the other component or there may be a central component at the same time.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0041] See also Figure 1 The magnetron sputtering device 300 includes a process chamber 310 and a conveying mechanism, wherein the process chamber 310 is provided with a cathode 320, the cathode 320 includes a target 321 and a cathode magnetic rod 322 rotatably disposed inside the target 321, and the cathode 320 has a first working state and a second working state with opposite sputtering directions. Before the cathode is used for formal film coating, the cathode 320 needs to be effectively cleaned. An embodiment of the present application provides a method for cleaning the cathode 320, comprising the following steps:

[0042] Step S10, using a conveying mechanism to convey the first baffle 100 to a corresponding position of the process chamber 310, and supplying a sputtering gas into the process chamber 310;

[0043] Step S20, placing the cathode 320 in a first working state, and performing a first sputtering coating on the second baffle 200 pre-fixed in the process chamber 310;

[0044] Step S30, rotating the cathode magnetic bar 322 by 180 degrees, so that the cathode 320 is in the second working state, and performing a second sputtering coating on the first baffle 100;

[0045] Step S40, alternately performing step S20 and step S30 until cleaning is completed;

[0046] Step S50 , moving the first baffle 100 out of the process chamber 310 .

[0047] In this embodiment, by alternately sputtering and coating the first baffle 100 and the second baffle 200, it is beneficial to improve the cleaning efficiency and effectively avoid deformation of each baffle due to high temperature, especially reducing the risk of the first baffle being affected by high temperature deformation and affecting its removal from the process chamber. Among them, the standard for completing the cleaning in step S40 is mainly that there are no pollutants and oxides on the surface of the target material, and a certain flatness is achieved to ensure that the target material particles can be stably released during the formal sputtering coating process to form a uniform film on the workpiece to be plated. Under normal circumstances, if the purity of the target surface is high, the sputtering gas introduced will produce uniform plasma discharge on or near the target surface, that is, normal glow power generation, but if there are pollutants or oxides on the target surface, hard arcs will appear when passing through the magnetic field. Hard arcs refer to abnormal discharge phenomena that occur during the sputtering coating process, which are usually manifested as abnormal enhancement and instability of glow discharge. This abnormal discharge often leads to local high temperature and melting on the target surface. The present application mainly determines the completion node of cleaning by monitoring the hard arc changes of the target material during the cleaning process. The specific operation is: determine the initial hard arc situation at the beginning of the power-on stage, monitor the hard arc changes during the cleaning process until all hard arcs are cleared and stop cleaning, which is the node of completion of cleaning.

[0048] See also Figure 2 In the embodiment shown, the cathode 320 is connected to the negative pole of the power supply, the first baffle 100 is insulated, the second baffle 200 is grounded, and an electric field for ionizing the sputtering gas is applied between the cathode 320 and the second baffle 200, and the sputtering gas is ionized into ions and electrons by the breakdown of the current. Since the cathode magnetic bar forms a magnetic field in the corresponding target surface area, the magnetic field can constrain the movement of electrons, which helps to ionize more ions that bombard the target material, and can control the sputtering angle of the target material particles; the change of the position of the cathode magnetic bar causes the change of the magnetic field position, so that the cathode has different sputtering directions, that is, the cathode 320 is in the first working state in step S20 and the cathode 320 is in the second working state in step S30.

[0049] The discharge current of the cathode 320 is proportional to the ion current on the surface of the sputtering target, so the discharge power of the cathode 320 is an important factor affecting the sputtering rate. Generally, the greater the discharge power, the faster the sputtering deposition rate, that is, the faster the target cleaning rate and the shorter the cleaning time, but the fast sputtering will quickly generate high temperature and cause the baffle to deform. Taking both deformation and cleaning time into consideration, in one embodiment of the present application, the entire cleaning process includes multiple discharge cycles, each discharge cycle includes a first stage and a second stage, wherein the cathode 320 increases from the initial power in the first stage, and the power of the subsequent sputtering coating is not less than the power of the previous sputtering coating. After reaching the preset power, the second stage is entered, and in the second stage, the cathode maintains the preset power for sputtering coating. When the temperature of the first baffle reaches the preset temperature, the next discharge cycle is entered.

[0050] Specifically, in combination with the alternating mode, the present application may adopt any of the following modes:

[0051] Method 1: In each discharge cycle, the first sputtering coating and the second sputtering coating are alternated successively as the discharge power changes.

[0052] Method 2: In each discharge cycle, the first sputtering coating is performed in the first stage, and the second sputtering coating is performed in the second stage.

[0053] Specifically in Method 1, the purpose of the first stage in the first discharge cycle is to fully preheat the target material, and in this stage, the first baffle and the second baffle are sputtered alternately, which can control the temperature of each baffle to rise at a lower rate, and then the second stage is carried out at high power; the role of the first stage in each subsequent discharge cycle is to avoid the high temperature caused by continuous sputtering coating at high power in the previous discharge cycle, thus playing a buffering role, and the second stage can effectively shorten the cleaning time. The entire Method 1 balances the two indicators of cleaning time and deformation.

[0054] Among them, the initial power is 0.8~5KW, the preset power can be 50KW~60KW, and the preset temperature of the first baffle is 80~150℃. In a specific embodiment, the preset temperature of the first baffle is 80~100℃; the initial power of the first stage in the first discharge cycle is 0.8~1KW, the initial power of the first stage in the subsequent discharge cycle is 4~5KW, the preset power is 50KW~52KW, the time of the first stage in the first discharge cycle is 9300~9500s, and the time of each first stage in the subsequent discharge cycle gradually decreases to 2000~6000s. Preferably, the initial power of the first first stage is 0.8KW, the initial power of the subsequent first stage is 5KW, the preset power P1 is 52KW, the time of the first first stage is 9400s, and the time of each subsequent first stage is 4000~2800s.

[0055] In the first method, the ratio of the first sputtering coating time to the second sputtering coating time in a single alternation is 1-3:1, and the first sputtering coating time and the second sputtering coating time both decrease continuously with the increase of the discharge power in the first period. Specifically, the first sputtering coating time can be 100-1200s, and the second sputtering coating time can be 100-1200s.

[0056] In one embodiment, the first sputtering coating and the second sputtering coating are alternated 30 to 50 times during the entire cleaning process. The switching of the cathode magnetic bar in the present application is instantaneous and can be ignored. In the present embodiment, the cathode 320 can work continuously during the entire cleaning process, and the target material can be quickly cleaned by continuous sputtering, with high cleaning efficiency. In addition, since the first sputtering coating and the second sputtering coating are alternately used during the continuous sputtering process, the impact on each baffle can be effectively reduced, and each baffle can be prevented from being deformed by high temperature.

[0057] Specifically, in the second method, the initial power is 0.8~5KW, the preset power is 50KW~60KW, and the preset temperature of the first baffle is 80~150℃. Specifically, in one embodiment, the preset temperature of the first baffle is 80~100℃; the initial power of the first stage (the first first sputtering coating) in the first discharge cycle is 0.8~1KW, the initial power of each subsequent first stage is 4~5KW, the preset power is 50KW~52KW, the time of the first first stage is 9500~11000s, and the time of each subsequent first stage gradually decreases to 3000~6000s. Preferably, the initial power of the first first stage is 0.8KW, the initial power of each subsequent first stage is 5KW, the preset power is 52KW, the time of the first first stage is 10000~10500s, and the time of each subsequent first stage is 5000~3000s.

[0058] In the second method, in order to avoid the temperature of each baffle rising too fast during the first sputtering coating and the second sputtering coating, the cathode discharge adopts an intermittent working mode, that is, an interval time is set between two discharges, and the interval time can be 15~60s. Preferably, the discharge interval time in the first sputtering coating is greater than the discharge interval time in the second sputtering coating, which is conducive to controlling the temperature rise of the second baffle, can reduce the risk of deformation, and thus reduce the frequency of replacement of the second baffle.

[0059] In one embodiment, the cleaning method 2 is used in the whole cleaning process, the time ratio of the first sputtering coating and the second sputtering coating in a single alternating process is 1-3:1, and the number of alternations is 3-5 times. In this application, the switching of the cathode magnetic bar is instantaneous and can be ignored.

[0060] In one embodiment, during the first sputtering coating and the second sputtering coating, the cathode magnetic bar 322 is swung, and the swing amplitude θ is 40°~90°. The determination of the swing amplitude is mainly related to the target-substrate distance. The target-substrate distance is the distance from the target material to the sputtering substrate in the magnetron sputtering equipment, which is generally 180~220mm. When the target-substrate distance is 180~195mm, the swing amplitude θ is preferably 60°~90°, and more preferably 90°. When the target-substrate distance is 200~220mm, the swing amplitude θ is preferably 40°~60°, and more preferably 40°, which is conducive to ensuring the uniformity of cleaning.

[0061] Furthermore, in the first sputtering coating, the initial swing direction of the cathode magnetic bar 322 is perpendicular to the second baffle 200, and the swing mode is left-right swinging. Similarly, in the second sputtering coating, the initial swing direction of the cathode magnetic bar 322 is perpendicular to the first baffle 100, and the swing mode is left-right swinging. After cleaning, the cathode magnetic bar 322 is positioned to face the first baffle 100.

[0062] See also Figures 4 and 5 The rotation of the target material 321 and the cathode magnetic rod 322 in each cathode 320 is independently controlled. For example, a first motor 340 and a second motor 350 are respectively configured, wherein the first motor 340 is connected to the first rotating shaft of the cathode magnetic rod 322, and the second motor 350 is connected to the second rotating shaft of the target material 321.

[0063] In one embodiment, the cleaning method further includes: while continuously supplying the sputtering gas into the process chamber 310, evacuating the process chamber 310 to maintain a stable gas pressure inside the process chamber 310. Specifically, the gas pressure of the process chamber 310 is 0.2-1 Pa, preferably 0.3-0.5 Pa, for example 0.4 Pa. The sputtering gas is, for example, argon.

[0064] See also Figure 2 , 3 , cathodes 320 are usually provided with multiple and spaced apart in the conveying direction of the first baffle 100, and multiple gas distribution pipes 330 for conveying sputtering gas to the process chamber are provided through the second baffle 200 in the magnetron sputtering device 300. During the cleaning process, sputtering gas is fed into the process chamber 310 from the interval area between two adjacent cathodes 320 to ensure that the gas is evenly distributed in the process chamber 310. During the cleaning process, all cathodes work synchronously and stop working synchronously, and the total cleaning time T is determined when all target materials are cleaned.

[0065] In order to avoid sputtering contamination of the process chamber 310, in one embodiment, the second baffle 200 is a cover that semi-encloses the cathode 320. Specifically, the cathodes 320 in the process chamber 310 are arranged in an arc shape. Since the target-substrate distances from each cathode to the first baffle (or the second baffle) are different, the angles of each cathode magnetic bar are set according to the range of the target-substrate distances from each cathode. For cathodes with a small target-substrate distance, the swing amplitude of the cathode magnetic bar is large, and for cathodes with a large target-substrate distance, the swing amplitude of the cathode magnetic bar is small.

[0066] The following provides a number of specific application examples in combination with specific parameters to further illustrate the present application.

[0067] Application Example 1

[0068] The cathode 320 includes a rotatable cylindrical target, the first baffle 100 is a pre-sputtering substrate, and the second baffle 200 is a protective cover pre-fixed on the magnetron sputtering device; cleaning the cathode 320 in the magnetron sputtering device 300 includes the following steps:

[0069] (1) The pre-sputtered substrate is transferred into the process chamber 310 by using the transfer mechanism and the substrate rack, and stops at a position corresponding to the sputtering area of ​​the cathode 320, the valve of the process chamber is closed, and the sputtering gas is introduced into the process chamber 310 and the gas is evacuated at the same time to maintain the gas pressure of the process chamber 310 at 0.4 Pa;

[0070] (2) Each cathode 320 is energized to perform sputtering coating using mode 1. When it is monitored that the temperature of the pre-sputtering substrate reaches a preset temperature of 80°C, the next discharge cycle is entered to continue sputtering coating until cleaning is completed. During the entire sputtering coating process, the hard arc changes of each target material are continuously monitored until all the hard arcs of the target material disappear, that is, cleaning is completed. The number of discharge cycles is counted as 3, and the number of alternations between the first sputtering coating and the second sputtering coating is 45. For specific parameters of each discharge mode, see Figures 6 to 8 In each figure, blue indicates the first sputtering coating, and red indicates the second sputtering coating. The total cleaning time T is calculated;

[0071] (3) Break the process chamber, remove the pre-sputtered substrate, and measure its deformation.

[0072] Application Example 2

[0073] Cleaning the cathode 320 in the magnetron sputtering device 300 includes the following steps:

[0074] (1) The pre-sputtered substrate is transferred into the process chamber 310 by using the transfer mechanism and the substrate rack, and stops at a position corresponding to the sputtering area of ​​the cathode 320, the valve of the process chamber 310 is closed, and the sputtering gas is introduced into the process chamber 310 and simultaneously exhausted to maintain the gas pressure of the process chamber at 0.4 Pa;

[0075] (2) Each cathode 320 is powered on so that the cathode performs sputtering coating in mode 2. When the temperature of the pre-sputtering substrate reaches the preset temperature of 80°C, the next alternating cycle (also the next discharge cycle) is entered. When no hard arc of the target is detected, the cleaning is completed. During the entire cleaning process, the discharge cycle is 3 times, that is, the alternating times of the first sputtering coating and the second sputtering coating are 3 times. For specific parameters, see Figures 9 to 11 In each figure, blue indicates the first sputtering coating, and red indicates the second sputtering coating. The total cleaning time T is calculated;

[0076] (3) The process chamber 310 is emptied, the pre-sputtered substrate is removed, and its deformation is measured.

[0077] Comparative Example 1

[0078] Cleaning a single cathode in a magnetron sputtering device includes the following steps:

[0079] (1) Use the conveying mechanism and substrate rack to convey the pre-sputtered substrate into the process chamber and stop it at the position corresponding to the cathode sputtering area. Close the valve of the process chamber, introduce sputtering gas into the process chamber and evacuate the gas at the same time to maintain the gas pressure of the process chamber at 0.4 Pa.

[0080] (2) Power is supplied to each cathode, and the cathode discharge power reaches a preset power of 52 kW within 12585 s. Then, the pre-sputtered substrate is sputtered at a preset power of 52 kW in an intermittent manner until the cleaning is completed. The intermittent manner is that when the temperature of the pre-sputtered substrate reaches a preset temperature of 80°C, the cathode is powered off for cooling. The specific intermittent time is 600 s. After the cleaning is completed, the cumulative time is 45450 s.

[0081] (4) Break the process chamber, remove the pre-sputtered substrate, and measure its deformation.

[0082] The hard arc test method in this application is: use the American Advanced Energy power supply Ascengt AMS60K model to monitor the hard arc conditions of each target material simultaneously. When the power supply detects abnormal discharge, an ARC Alarm will be prompted, and the real-time hard arc quantity of each target material will be counted. The calculation formula for cleaning efficiency is: initial hard arc quantity / total time.

[0083] The test results are shown in Table 1:

[0084] Table 1 Test results

[0085]

[0086] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the present application. It should be noted that, for those skilled in the art, several modifications and improvements can be made without departing from the concept of the present application, all of which belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for cleaning the cathode of a magnetron sputtering device, characterized in that: The magnetron sputtering device comprises a process chamber and a conveying mechanism in which the cathode is built-in, the cathode comprises a target material and a cathode magnetic rod rotatably arranged inside the target material, the cathode has a first working state and a second working state in opposite sputtering directions, and the cleaning method comprises the following steps: Step S10, using a conveying mechanism to convey the first baffle to a corresponding position of the process chamber, and supplying a sputtering gas into the process chamber; Step S20, placing the cathode in a first working state, and performing a first sputtering coating on a second baffle pre-fixed in the process chamber; Step S30, rotating the cathode magnetic bar by 180 degrees so that the cathode is in a second working state, and performing a second sputtering coating on the first baffle; Step S40, alternately performing step S20 and step S30 until cleaning is completed; Step S50, moving the first baffle out of the process chamber; The first baffle is insulated, the cathode is connected to the negative pole of the power supply, and the second baffle is grounded.

2. The cleaning method according to claim 1, characterized in that: The ratio of the first sputtering coating time to the second sputtering coating time in a single alternation is 1-3:

1.

3. The cleaning method according to claim 1, characterized in that: The entire cleaning process includes multiple discharge cycles, each of which includes a first stage and a second stage. In the first stage, the cathode power increases from the initial power one by one, and the power of the subsequent sputtering coating is not less than the power of the previous sputtering coating. After reaching the preset power, the second stage is entered. In the second stage, the cathode maintains the preset power for sputtering coating. When the temperature of the first baffle reaches a preset temperature, the next discharge cycle begins.

4. The cleaning method according to claim 3, characterized in that: In each discharge cycle, the first sputtering coating and the second sputtering coating are alternated successively as the discharge power changes; or In each discharge cycle, a first sputtering coating is performed in the first stage, and a second sputtering coating is performed in the second stage.

5. The cleaning method according to claim 3, characterized in that: The initial power is 0.8-5KW, the preset power is 50KW-60KW, and the preset temperature of the first baffle is 80-150°C.

6. The cleaning method according to claim 3, characterized in that: The first sputtering coating time and the second sputtering coating time are both 100-1200 s.

7. The cleaning method according to claim 1, characterized in that: During the first sputtering coating and the second sputtering coating, the cathode magnetic bar is swung with a swing amplitude of 40° to 90°.

8. The cleaning method according to claim 1, characterized in that: The cathodes are provided in plurality and are arranged at intervals along the conveying direction of the first baffle plate, and sputtering gas is fed into the process chamber from the interval area between two adjacent cathodes.

9. The cleaning method according to claim 1, characterized in that: The second baffle is a shell structure that semi-surrounds the cathode.

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