Mask and display panel
By introducing electrostatic release lines in the light-shielding layer, the problem of tip discharge between conductive patterns is solved, the exposure effect of the photoresist layer is improved, and the integrity of the conductive pattern structure is ensured.
Patent Information
- Application Number
- CN202310635866.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-05-31
- Publication Date
- 2025-10-10
- Estimated Expiration
- 2043-05-31
AI Technical Summary
As the distance between two adjacent pattern structures in the display panel decreases, tip discharge is likely to occur between the conductive patterns of the light shielding layer, causing the edges of the light shielding patterns to be damaged, affecting the exposure effect of the photoresist layer.
An electrostatic release line is introduced into the light shielding layer. The electrostatic release line is located in the hollow area. The first end is electrically connected to the concave corner of the first conductive pattern, and the second end is electrically connected to the second conductive pattern to reduce tip discharge between the conductive patterns.
By introducing the electrostatic release line, the incompletely exposed residual portion in the photoresist layer is reduced, the exposure effect of the photoresist layer is improved, and the integrity of the conductive pattern structure is ensured.
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Figure CN119065194B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of display panel preparation, and in particular to a mask and a display panel. Background Art
[0002] With technological advancements, the spacing between adjacent pattern structures within display panels has gradually decreased. Consequently, the distance between adjacent light-shielding patterns in the mask's light-shielding layer has also gradually decreased. Because light-shielding patterns are typically made of conductive materials, when the spacing between adjacent light-shielding patterns is too small, tip discharges are likely to occur, damaging the edges of the light-shielding patterns. Summary of the Invention
[0003] The embodiments of the present application provide a mask and a display panel, wherein the light shielding layer is less likely to have tip discharge.
[0004] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:
[0005] In one aspect, a mask is provided, comprising:
[0006] light-transmitting substrate;
[0007] A light-shielding layer is provided on one side of the light-transmitting substrate, and includes a first conductive pattern, a second conductive pattern, and an electrostatic release line. A hollow area is provided between the first conductive pattern and the second conductive pattern, and the electrostatic release line is located in the hollow area; the first conductive pattern includes a first edge and a second edge on the side facing the second conductive pattern, and the first edge and the second edge are connected to form a first concave angle. The first end of the electrostatic release line is electrically connected to the first concave angle, and the second end of the electrostatic release line is electrically connected to the second conductive pattern.
[0008] In some embodiments, the first end of the electrostatic discharge line extends along an angle bisector of the first concave angle.
[0009] In some embodiments, a first notch is defined in the first concave corner, a portion of the first end of the electrostatic release line is located within the first notch, and a gap is defined between the electrostatic release line and a side of the first notch.
[0010] In some embodiments, part or all of the first notch is located on a side of the first side and the second side away from the hollow area.
[0011] In some embodiments, the first gap has a first side and a second side, the first side and the second side are parallel and opposite to each other, and the first end of the electrostatic discharge line is located between the first side and the second side; the first gap also has a first bottom and a second bottom, the first bottom connects the first side and the electrostatic discharge line, and the first bottom is parallel to the first side, and the second bottom connects the second side and the electrostatic discharge line, and the second bottom is parallel to the second side.
[0012] In some embodiments, the first gap has a first side and a second side, the first side and the second side are parallel and opposite to each other, and the first end of the electrostatic discharge line is located between the first side and the second side; the first gap also has a first bottom and a second bottom, the first bottom connects the first side and the electrostatic discharge line, and the first bottom is parallel to the first side, and the second bottom connects the second side and the electrostatic discharge line, and the second bottom is parallel to the second side.
[0013] In some embodiments, the first gap is quadrilateral, and a diagonal line of the first gap coincides with an angle bisector of the first concave corner.
[0014] In some embodiments, part or all of the first gap is located on a side of the first side and the second side close to the hollowed-out area.
[0015] In some embodiments, the first side is provided with a first protrusion protruding towards the hollowed-out area, the second side is provided with a second protrusion protruding towards the hollowed-out area, and the first protrusion and the second protrusion form the first gap.
[0016] In some embodiments, the first gap is symmetrically arranged relative to the angle bisector of the first concave corner.
[0017] In some embodiments, the gap is provided with a light shielding part, and the light shielding part is in an island shape in the gap.
[0018] In some embodiments, the electrostatic discharge line includes a first trace, a second trace, and a transition line connecting the first trace and the second trace, the first trace extends in a first direction, the second trace extends in a second direction, the first direction and the second direction intersect, and the line width of the transition line is equal to the line width of the first trace and the second trace.
[0019] In some embodiments, the transition line is an arc line.
[0020] In some embodiments, the side of the second conductive pattern towards the first conductive pattern includes a third side and a fourth side, the third side and the fourth side are connected to form a second concave corner, and the second end of the electrostatic discharge line is electrically connected to the second concave corner.
[0021] In some embodiments, a straight-line distance between the first concave angle and the second concave angle is greater than or equal to 10 μm.
[0022] In some embodiments, the line width of the electrostatic release line is L, and 0.5 μm≤L≤1.0 μm.
[0023] In some embodiments, the first conductive pattern includes a first conductive portion protruding toward the second conductive pattern, the second conductive pattern includes a second conductive portion, the first conductive portion and the second conductive portion are opposite, and the minimum distance between the first conductive portion and the second conductive portion is d, and the width of the first conductive portion along a direction perpendicular to the minimum distance between the first conductive portion and the second conductive portion is w; d≤10μm, and w≤500μm.
[0024] In some embodiments, the electrostatic release line is disposed near an edge of the mask.
[0025] On the other hand, a display panel is provided, comprising a plurality of film layers, at least one of which is manufactured by photolithography using the mask.
[0026] In embodiments of the present application, a mask and display panel are provided, wherein a light shielding layer includes a first conductive pattern, a second conductive pattern, and an electrostatic release line. A hollow region is defined between the first and second conductive patterns, and the electrostatic release line is located within the hollow region. The first conductive pattern includes a first side and a second side on a side facing the second conductive pattern, the first side and the second side being connected to form a first concave angle. The first end of the electrostatic release line is electrically connected to the first concave angle, and the second end of the electrostatic release line is electrically connected to the second conductive pattern. The pattern structure formed by transferring the first conductive pattern to the photoresist layer is a first pattern structure. Because the electrostatic release line is electrically connected to the first concave angle, a first residual structure formed at the junction of the electrostatic release line and the first conductive pattern in the first pattern structure is located in a region opposite the first concave angle. Due to the exposure characteristics of the first concave angle, a second residual portion is formed in the region of the first pattern structure opposite the first concave angle. That is, both the first and second residual portions are located in the region of the first pattern structure opposite the first concave angle, so that at least portions of the first and second residual portions overlap, reducing the number of residual portions and minimizing the impact on the pattern structure. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0028] Figure 1 Schematically shows a front view structure of a display device;
[0029] Figure 2 A cross-sectional view of a mask is schematically shown;
[0030] Figure 3 It is a partial schematic diagram of a display panel in the related art;
[0031] Figure 4 It is a partial schematic diagram of a display panel in the related art;
[0032] Figure 5 It is a partial schematic diagram of a photoresist layer in the related art;
[0033] Figure 6 A partial plan view of a light-shielding layer is schematically shown;
[0034] Figure 7 A partial plan view of another light-shielding layer is schematically shown;
[0035] Figure 8 A plan view schematically shows another light-shielding layer;
[0036] Figure 9 A plan view of an electrostatic discharge line is schematically shown;
[0037] Figure 10 A plan view of another electrostatic discharge line is schematically shown;
[0038] Figure 11 A plan view of another electrostatic discharge line is schematically shown;
[0039] Figure 12 A partial structural diagram of a light-shielding layer is schematically shown;
[0040] Figure 13 Schematically shows a pattern structure formed by transferring a first conductive pattern to a photoresist layer;
[0041] Figure 14 Schematically shows a first graphic structure formed after the first end of the electrostatic release line is electrically connected to the first concave corner;
[0042] Figure 15 schematically shows a partial structural diagram of the first conductive pattern;
[0043] Figure 16 schematically shows a partial structural diagram of the first conductive pattern;
[0044] Figure 17 A structural diagram of a first conductive pattern not connected to an electrostatic discharge line is shown;
[0045] Figure 18 schematically shows a partial structural diagram of the first conductive pattern;
[0046] Figure 19 schematically shows a partial structural diagram of the first conductive pattern;
[0047] Figure 20 A partial plan view of another light-shielding layer is schematically shown;
[0048] Figure 21 A partial plan view of another light-shielding layer is schematically shown;
[0049] Figure 22 A display panel is schematically shown;
[0050] Figure 23 The partial structure of the area corresponding to the GP side in the light shielding layer is schematically shown;
[0051] Figure 24 The diagram schematically shows the structure of a portion of the light shielding layer corresponding to the output line of the scanning circuit;
[0052] Figure 25 Schematically shows a partial structural diagram of the area corresponding to the DP side in the light shielding layer;
[0053] Figure 26 The partial structure diagram of the area corresponding to the DPO side in the light shielding layer is schematically shown. DETAILED DESCRIPTION
[0054] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.
[0055] In the embodiments of the present application, words such as "first", "second", "third", and "fourth" are used to distinguish between identical or similar items with basically the same functions and effects. This is only for the purpose of clearly describing the technical solutions of the embodiments of the present application, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.
[0056] In the embodiments of the present application, “a plurality of” means two or more, and “at least one” means one or more, unless otherwise clearly defined.
[0057] In the embodiments of the present application, the terms "upper" and "lower" indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0058] Figure 1 The figure schematically shows a front view structure of a display device. Figure 1 As shown, some embodiments of the present application provide a display device 100, which can be any device that displays either moving (e.g., video) or fixed (e.g., still images) and whether text or images. More specifically, it is expected that the embodiments described can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, video cameras, game consoles, watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, automotive displays (e.g., speedometer displays, etc.), navigation systems, cockpit controls and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc. Figure 1 In the figure, the display device 100 is taken as a mobile phone as an example for illustration.
[0059] The display device 100 includes a display panel 110. The display panel 110 may be a liquid crystal display (LCD) panel; the display panel 110 may also be an electroluminescent display panel or a photoluminescent display panel. If the display panel 110 is an electroluminescent display panel, the electroluminescent display panel may be an organic light-emitting diode (OLED) display panel or a quantum dot light-emitting diode (QLED) display panel. If the display panel 110 is a photoluminescent display panel, the photoluminescent display device may be a quantum dot photoluminescent display panel.
[0060] Some embodiments of the present application are described by taking the display panel 110 as a liquid crystal display panel as an example. The display panel 110 includes a driving backplane and a color filter substrate arranged in a cell.
[0061] The driving backplane can include a first substrate and a plurality of film layers stacked on the first substrate, and the plurality of film layers can cooperate to form a driving circuit and a scanning circuit. For example, the plurality of film layers can include a gate layer, an active layer, a source-drain layer, an ITO layer, a passivation layer (PVX), and the like.
[0062] The color film substrate can include a second substrate and at least one film layer stacked on the second substrate. For example, the at least one film layer includes a color filter, a black matrix, and the like.
[0063] The embodiments of the present application also provide a mask, which is a photolithography mask and is a pattern mother plate used in a photolithography process in micro-nano processing technology. Exemplarily, the mask can be a half-tone mask. At least one of the film layers included in the driving backplane and the color film substrate is formed by the mask provided by the embodiments of the present application.
[0064] The principle of the mask will be described below by taking the gate layer formed by the mask provided by the embodiments of the present application as an example. After the first metal layer is formed on the first substrate, a photoresist layer is obtained by coating the photoresist on the first metal layer. The photoresist layer is exposed by taking the mask as a mask, and then the excess photoresist is removed, so that the pattern of the mask is transferred to the photoresist layer. The first metal layer not covered by the photoresist layer is etched, so that the pattern of the photoresist layer is transferred to the first metal layer, and a plurality of pattern structures are formed in the first metal layer.
[0065] Figure 2 A cross-sectional view of a mask is schematically shown. As shown in Figure 2 The mask 200 includes a light-transmitting substrate 201 and a light-blocking layer 202 disposed on the light-transmitting substrate 201.
[0066] The light-transmitting substrate 201 serves as the framework of the mask 200 and is used to support the light-blocking layer 202. At least part of the light-transmitting substrate 201 can transmit light, so that the photoresist layer can be exposed by light in the exposure process.
[0067] Exemplarily, the light-transmitting substrate 201 is made of a material with good rigidity and light-transmitting property, such as quartz.
[0068] The light-blocking layer 202 is disposed on at least one side of the light-transmitting substrate 201 and is used to block light in the exposure process to prevent the photoresist layer that does not need to be exposed from being irradiated by light.
[0069] The light-blocking layer 202 does not transmit light or has a low light-transmitting rate. Exemplarily, the light-blocking layer 202 is made of a metal material, such as chromium.
[0070] The light shielding layer 202 includes multiple conductive patterns, with a hollow area between adjacent conductive patterns. The area opposite the hollow area in the transparent substrate 201 is transparent, so that light can pass through the transparent substrate 201 and the hollow area to expose the photoresist layer during the exposure process.
[0071] With the development of technology, the distance between two adjacent graphic structures in the film layer of the display panel is gradually reduced, and correspondingly, the distance between two adjacent conductive patterns in the mask used to prepare the film layer is also gradually reduced. When the distance between two adjacent conductive patterns is too small, tip discharge is likely to occur between the two adjacent conductive patterns, causing the conductive patterns to be destroyed, thereby affecting the graphic structure prepared by the mask. For example, after tip discharge occurs between two adjacent conductive patterns, a tip discharge mark is formed in the hollow area between the two adjacent conductive patterns. The mask is not transparent or semi-transparent in the area where the tip discharge mark is formed, resulting in the inability to fully expose the photoresist layer during the exposure process, thereby causing a connection between the two graphic structures of the display panel 110, such as Figure 3 and Figure 4 shown. Figure 3 and Figure 4 The area within the middle circle is the area where the connection occurs between the two graphic structures.
[0072] In the related art, an electrostatic release line is provided in the hollow area of the light-shielding layer, one end of the electrostatic release line is electrically connected to a conductive pattern, and the other end of the electrostatic release line is electrically connected to another conductive pattern. The two conductive patterns are electrically connected through the electrostatic release line, so that the potentials of the two conductive patterns are the same, thereby preventing tip discharge from occurring between the two conductive patterns.
[0073] However, the photoresist layer is not fully exposed at the connection between the conductive pattern and the electrostatic release line, so that the photoresist layer forms an incompletely exposed first residual portion a at the connection between the conductive pattern and the electrostatic release line, as shown in FIG. Figure 5 shown.
[0074] like Figure 5 As shown, the height of the first residual portion a is H1, the width of the first residual portion a is H2, and the angle α of the first residual portion a is α. Generally, the higher the exposure dose of the exposure machine and the longer the etching time, the larger the width H2 of the first residual portion a, the smaller the height H1 of the first residual portion a, and the larger the angle α of the first residual portion a. The lower the exposure dose of the exposure machine and the shorter the etching time, the smaller the width H2 of the first residual portion a, the larger the height H1 of the first residual portion a, and the smaller the angle α of the first residual portion a.
[0075] Exemplarily, 0.1 μm ≤ H1 ≤ 1 μm, 0.1 μm ≤ H2 ≤ 2 μm, and 0° ≤ α ≤ 180°. For example, H1 = 0.4 μm, H2 = 0.6 μm, and α = 110°; or H1 = 0.5 μm, H2 = 0.8 μm, and α = 110°.
[0076] When the pattern of the first residual portion a is transferred to the conductive film layer in the display panel 110 , it is likely to cause malfunction of the display panel 110 .
[0077] Figure 12 The figure schematically shows a partial structure of a light shielding layer. Figure 12 As shown, the plurality of conductive patterns in the light shielding layer 202 include a first conductive pattern 210 and a second conductive pattern 220, with a hollow region defined between the first conductive pattern 210 and the second conductive pattern 220. An electrostatic discharge line 230 is located within the hollow region, with a first end of the electrostatic discharge line 230 electrically connected to the first conductive pattern 210 and a second end of the electrostatic discharge line 230 electrically connected to the second conductive pattern 220.
[0078] The first conductive pattern 210 and the second conductive pattern 220 are two adjacent conductive patterns, and when the electrostatic discharge line 230 is not provided, a tip discharge is likely to occur between the first conductive pattern 210 and the second conductive pattern 220 .
[0079] Figure 6 Schematically shows a partial plan view of a light-shielding layer, Figure 7 A partial plan view of another light-shielding layer is schematically shown. Figure 6 and Figure 7 As shown, the first conductive pattern 210 includes a first conductive portion 10 protruding toward the second conductive pattern 220, and the second conductive pattern 220 includes a second conductive portion 20. The first conductive portion 10 and the second conductive portion 20 are opposite to each other, and the minimum distance between the first conductive portion 10 and the second conductive portion 20 is d. The width of the first conductive portion 10 along the direction perpendicular to the minimum distance between the first conductive portion 10 and the second conductive portion 20 is w; d≤10μm, and w≤500μm.
[0080] For example, Figure 6As shown, the first conductive pattern 210 includes a first conductive portion 10 that protrudes toward the second conductive pattern 220, and the second conductive pattern 220 includes a second conductive portion 20 that protrudes toward the first conductive pattern 210. Along the X-direction shown in the figure, the distance between the first conductive portion 10 and the second conductive portion 20 is d. Along the Y-direction shown in the figure, the first conductive portion 10 is smaller than the second conductive portion 20, and the dimension of the first conductive portion 10 is w. When d ≤ 10 μm and w ≤ 500 μm, tip discharge is likely to occur between the first conductive portion 10 and the second conductive portion 20, and an electrostatic discharge line 230 needs to be electrically connected to the first conductive pattern 210 and the second conductive pattern 220.
[0081] For example, Figure 7 As shown, the first conductive pattern 210 includes a first conductive portion 10 that protrudes toward the second conductive pattern 220. The second conductive portion 20 of the second conductive pattern 220, which is directly opposite the first conductive portion 10, is a straight pattern. The distance between the first conductive portion 10 and the second conductive portion 20 along the X direction is d, and the dimension of the first conductive portion 10 along the Y direction is w. When d ≤ 10 μm and w ≤ 500 μm, tip discharge is likely to occur between the first conductive portion 10 and the second conductive portion 20, requiring an electrostatic discharge line 230 to electrically connect the first conductive pattern 210 and the second conductive pattern 220.
[0082] Figure 8 Schematically shows a plan view of another light shielding layer. Figure 8 As shown, the second conductive pattern 220 includes a second conductive portion 20 that protrudes toward the first conductive pattern 210. The first conductive portion 10 of the first conductive pattern 210, which is directly opposite the second conductive portion 20, is a straight pattern. The distance between the first conductive portion 10 and the second conductive portion 20 along the X direction is d, and the dimension of the second conductive portion 20 along the Y direction is w. When d ≤ 10 μm and w ≤ 500 μm, tip discharge is likely to occur between the first conductive portion 10 and the second conductive portion 20, requiring an electrostatic discharge line 230 to electrically connect the first conductive pattern 210 and the second conductive pattern 220.
[0083] For the convenience of description, the following only Figure 6 The first conductive pattern 210 and the second conductive pattern 220 are taken as examples for description.
[0084] The static electricity release line 230 is located in the hollow area and can electrically connect the first conductive pattern 210 and the second conductive pattern 220 .
[0085] Exemplarily, the electrostatic discharge line 230 is disposed on the same layer as the first conductive pattern 210 and the second conductive pattern 220. This "on-layer arrangement" means that the electrostatic discharge line 230, the first conductive pattern 210, and the second conductive pattern 220 are formed in the same patterning process. Of course, the electrostatic discharge line 230 can also be disposed on a different layer from the first conductive pattern 210 and the second conductive pattern 220, and this embodiment of the present application is not limited thereto.
[0086] Since the electrostatic release line 230 electrically connects the first conductive pattern 210 and the second conductive pattern 220 to balance the charge in the first conductive pattern 210 and the second conductive pattern 220, it is undesirable to transfer the pattern of the electrostatic release line 230 to the photoresist layer. Therefore, while ensuring the charge release capability of the electrostatic release line 230, the line width of the electrostatic release line 230 needs to be minimized to prevent the exposure machine from transferring the pattern of the electrostatic release line 230 to the photoresist layer.
[0087] Exemplarily, the line width of the electrostatic release line 230 is smaller than the minimum resolution of the exposure machine. For example, the line width of the electrostatic release line 230 is L, and 0.5 μm≤L≤1.0 μm.
[0088] The line width of the electrostatic release line 230 may be the same or different. For example, when the line width of the electrostatic release line 230 is different, the minimum line width of the electrostatic release line 230 is greater than or equal to 0.5 μm, and the maximum line width of the electrostatic release line 230 is less than or equal to 1 μm.
[0089] The static electricity release line 230 may be a straight line, a broken line, or a curved line.
[0090] When the static electricity release line 230 is a straight line, the static electricity release line 230 occupies less space. For example, when the distance between the first conductive part 10 and the second conductive part 20 is small, the static electricity release line 230 can be set as a straight line.
[0091] When the pattern of mask 200 is transferred to the conductive film layer, a first conductive structure is generated in the conductive film layer corresponding to the first conductive pattern 210, and a second conductive structure is generated corresponding to the second conductive pattern 220. The first conductive structure tends to form a first sharp angle at the connection between the first conductive pattern 210 and the electrostatic discharge line 230, while the second conductive structure forms a second sharp angle at the connection between the second conductive pattern 220 and the electrostatic discharge line 230. When the electrostatic discharge line 230 is a broken line or a curved line, the first and second ends of the electrostatic discharge line 230 are not aligned, and thus the first and second sharp angles are also not aligned, thereby reducing the probability of sharp discharge between the first and second sharp angles.
[0092] When the static electricity release line 230 is a broken line or a curved line, the static electricity release line 230 may include one turn or multiple turns. Figure 9 A plan view of an electrostatic discharge line is schematically shown, as shown in FIG. Figure 9 As shown, the static discharge line 230 includes a bend. Figure 10 A plan view of another electrostatic discharge line is schematically shown, as Figure 10 As shown, the static electricity release line 230 includes two turns.
[0093] Continue to refer Figure 9 and Figure 10 The electrostatic discharge line 230 may include a first line 231, a second line 232, and a transition line 233 connecting the first line 231 and the second line 232. The first line 231 extends along a first direction, the second line 232 extends along a second direction, and the first direction and the second direction intersect. Figure 9 and Figure 10 It can be seen that the line width L3 of the transition line 233 is greater than the line width L1 of the first trace 231 and the line width L2 of the second trace 232. Since the maximum line width of the electrostatic discharge line 230 needs to be less than or equal to 1μm, that is, L3 ≤ 1μm, L1 and L2 need to be further reduced based on L3, which reduces the range of options for L1 and L2.
[0094] Therefore, the line width L3 of the transition line 233 can be equal to the line width L1 of the first trace 231 and the line width L2 of the second trace 232, so that the line width L1 of the first trace 231, the line width L2 of the second trace 232 and the line width L3 of the transition line 233 can be selected in a wider range.
[0095] Figure 11 Schematically shows a plan view of another electrostatic discharge line. For example, Figure 11 As shown, the transition line 233 is an arc line, and the transition line 233 smoothly transitions with the first routing line 231 and the second routing line 232, so that the line width L1 of the first routing line 231, the line width L2 of the second routing line 232 and the line width L3 of the transition line 233 are equal.
[0096] Of course, the transition line 233 may also have other structures, as long as the line width L3 of each portion of the transition line 233 is equal and equal to the line width L1 of the first trace 231 and the line width L2 of the second trace 232 .
[0097] Continue to refer Figure 12 The first conductive pattern 210 includes a first side 211 and a second side 212 on a side facing the second conductive pattern 220 . The first side 211 and the second side 212 are connected to form a first concave corner 30 .
[0098] The first concave corner 30 is a corner that is concave toward the inside of the first conductive pattern 210 .
[0099] When the exposure machine exposes the photoresist layer through the mask 200 , the area corresponding to the first concave corner 30 in the photoresist layer is often insufficiently exposed, and an ideal concave corner cannot be formed. Figure 13 The diagram schematically shows a pattern structure formed by transferring the first conductive pattern to the photoresist layer. Figure 13 As shown, corresponding to the first concave corner 30 area, the pattern structure formed by the photoresist layer is not completely etched, forming a second residual portion b (the area in the dotted box in the figure).
[0100] In view of this, if Figure 12 As shown, in the embodiment of the present application, the first end of the electrostatic release line 230 is electrically connected to the first concave corner 30 .
[0101] The pattern structure formed by transferring the first conductive pattern 210 to the photoresist layer is a first pattern structure. Because the electrostatic release line 230 is electrically connected to the first concave corner 30, a first residual structure a formed at the connection between the electrostatic release line 230 and the first conductive pattern 210 in the first pattern structure is located in the area of the first pattern structure opposite the first concave corner 30. Due to the exposure characteristics of the first concave corner 30, a second residual portion b is formed in the area of the first pattern structure opposite the first concave corner 30. Both the first residual portion a and the second residual portion b are located in the area of the first pattern structure opposite the first concave corner 30, resulting in at least partial overlap between the first residual portion a and the second residual portion b. This reduces the number of incompletely exposed residual portions in the photoresist layer and brings the pattern of the first pattern structure closer to that of the first conductive pattern 210.
[0102] The first end of the electrostatic release line 230 can extend along the angle bisector of the first concave corner 30 so that the electrostatic release line 230 is equidistant from the first side 211 and the second side 212 , thereby making the exposure amounts on both sides of the electrostatic release line 230 substantially the same.
[0103] Figure 14 The first graphic structure formed after the first end of the electrostatic release line is electrically connected to the first concave corner is schematically shown. Figure 14 As shown, when the first end of the static electricity release line 230 is electrically connected to the first concave corner 30 , the first pattern structure will form a redundant structure (the area within the dotted box in the figure).
[0104] Figure 15 Schematically shows a partial structure diagram of the first conductive pattern. Figure 15As shown, the first concave corner 30 can be provided with a first notch 50, and a partial region of the first end of the static discharge line 230 is located in the first notch 50, and a gap is provided between the static discharge line 230 and the side of the first notch 50. In this way, the light transmittance at the connection between the static discharge line 230 and the first concave corner 30 can be improved, so that the photoresist layer is exposed more fully, and the size of the first residual portion a is reduced or the first residual portion is eliminated, so that the pattern of the first conductive structure is closer to the pattern of the first conductive structure 210.
[0105] The size of the first notch 50 along the line width direction of the static discharge line 230 is s1, and the size of the first notch 50 along the wire direction of the first end of the static discharge line 230 is s2. Exemplarily, 0.5 μm≤s1≤2.0 μm, and 0.5 μm≤s2≤2.0 μm.
[0106] A part or all of the first notch 50 is located on the side of the first edge 211 and the second edge 212 away from the hollowed-out region. That is, the first notch 50 is located on the inner side of the first concave corner 30 towards the first conductive pattern 210, so that the exposure at the first concave corner 30 is more sufficient, and the first residual portion a located opposite the first concave corner 30 in the first pattern structure is reduced or eliminated.
[0107] The first notch 50 can be symmetrically arranged relative to the angle bisector of the first concave corner 30, so that the exposure on both sides of the angle bisector of the first concave corner 30 is more uniform.
[0108] Continuing to refer to Figure 15 , the side of the first notch 50 includes a first side 213 and a second side 214, the first side 213 and the second side 214 are parallel and oppositely arranged, and the first end of the static discharge line 230 is located between the first side 213 and the second side 214. The first notch 50 further includes a first bottom edge 215 and a second bottom edge 216, the first bottom edge 215 connects the first side 213 and the static discharge line 230, and the first bottom edge 215 is parallel to the first edge 211, and the second bottom edge 216 connects the second side 214 and the static discharge line 230, and the second bottom edge 216 is parallel to the second edge 212. So that the exposure at the first concave corner 30 is more sufficient, and the first residual portion a located opposite the first concave corner 30 in the first pattern structure is reduced or eliminated.
[0109] Figure 16 A schematic diagram of a local structure of the first conductive pattern is shown. As Figure 16 shown, the first notch 50 includes a first side 213 and a second side 214, the first side 213 and the static discharge line 230 form a first gap, the second side 214 and the static discharge line 230 form a second gap, and the first gap and / or the second gap are not communicated with the hollowed-out region. So that the exposure at the first concave corner 30 is more sufficient, and the first residual portion a located opposite the first concave corner 30 in the first pattern structure is reduced or eliminated.
[0110] Figure 17 1 shows a structural diagram of a first conductive pattern not connected to an electrostatic discharge line. Figure 17 As shown, the first notch 50 is a quadrilateral, and the diagonal of the first notch 50 coincides with the angle bisector of the first concave corner 30. When the electrostatic release line 230 extends along the angle bisector of the first concave corner 30, the exposure amount on both sides of the electrostatic release line 230 is approximately the same.
[0111] Part or all of the first notch 50 may also be located on the side of the first side 211 and the second side 212 close to the hollow area, so that the preparation of the first notch 50 is simpler.
[0112] Figure 18 Schematically shows a partial structure diagram of the first conductive pattern. Figure 18 As shown, the first side 211 is provided with a first protrusion 217 protruding toward the hollow area, and the second side 212 is provided with a second protrusion 218 protruding toward the hollow area. The first protrusion 217 and the second protrusion 218 form a first notch 50.
[0113] Exemplarily, the first protrusion 217 and the second protrusion 218 are right triangles, one side of the first protrusion 217 is parallel to the electrostatic discharge line 230, and one side of the second protrusion 218 is parallel to the electrostatic discharge line 230. The first protrusion 217 and the second protrusion 218 may be equal in size.
[0114] Figure 19 Schematically shows a partial structure diagram of the first conductive pattern. Figure 19 As shown, a light shielding portion 60 may be provided in the gap, and the light shielding portion 60 is in an island shape in the gap.
[0115] Exemplarily, gaps are provided between the light shielding portion 60 and the electrostatic release line 230 and each side of the first notch 50 , so that light can pass through the gaps to illuminate the photoresist layer below, thereby increasing the exposure amount of the photoresist layer.
[0116] Figure 20 A partial plan view of another light-shielding layer is schematically shown. Figure 21 A partial plan view of another light-shielding layer is schematically shown. Figure 20 and Figure 21 As shown, the side of the second conductive pattern 220 facing the first conductive pattern 210 may include a third side 221 and a fourth side 222, and the third side 221 and the fourth side 222 are connected to form a second concave corner 40, and the second end of the electrostatic release line 230 can be electrically connected to the second concave corner 40.
[0117] The second conductive pattern 220 is transferred to the photoresist layer to form a second pattern structure. The second end of the electrostatic release line 230 is electrically connected to the second concave corner 40, reducing the amount of residual portion on the second pattern structure and making the pattern of the second pattern structure closer to the pattern of the second conductive pattern 220.
[0118] When the first end of the electrostatic release line 230 is electrically connected to the first concave corner 30 and the second end of the electrostatic release line 230 is electrically connected to the second concave corner 40, the electrostatic release line 230 may be a broken line (eg, Figure 20 As shown), the electrostatic release line 230 can also be a straight line (as shown Figure 21 shown).
[0119] The linear distance between the first concave corner 30 and the second concave corner 40 may be greater than or equal to 10 μm to prevent tip discharge between the conductive structures corresponding to the first concave corner 30 and the second concave corner 40 in the film layer of the display panel 110 .
[0120] A second notch may be provided on the second concave corner 40 . The size and structure of the second notch may be the same as or different from the first notch 50 , and details thereof will not be repeated here.
[0121] Figure 22 A display panel is schematically shown. Figure 22 As shown, the display panel 110 includes a display area AA and a non-display area surrounding the display area.
[0122] Exemplarily, the non-display area includes a data signal input side DP located below the display area, a scan signal input side GP located on the left and right sides of the display area, and an opposite side DPO located above the display area.
[0123] Display area AA is provided with multiple pixel electrodes, multiple gate lines, and multiple data lines. The multiple gate lines are arranged in parallel with each other, and the multiple data lines are arranged in parallel with each other. Adjacent pixel electrodes are arranged independently and at a relatively large distance. Therefore, tip discharge is less likely to occur in the area of reticle 200 corresponding to display area AA.
[0124] The GP side houses scanning circuits and corresponding signal wiring, which are complex and dense. Therefore, tip discharges are prone to occur in the area of reticle 200 corresponding to the GP side. Therefore, electrostatic discharge lines 230 are required in this area of reticle 200. For this reason, electrostatic discharge lines 230 can be placed near the edge of reticle 200.
[0125] Figure 23 The schematic diagram shows the structure of the part of the light shielding layer corresponding to the GP side. Figure 23 The lines extending in the vertical direction correspond to the signal lines in the scanning circuit, such as Figure 23As shown, an electrostatic discharge line 230 may be provided between the first conductive pattern 210 and the second conductive pattern 220 corresponding to two adjacent signal lines.
[0126] Figure 24 The partial structure of the light shielding layer in the area corresponding to the output line of the scanning circuit is schematically shown. Figure 23 The third conductive pattern 240 corresponds to the Vcom line, the fourth conductive pattern 250 corresponds to the output line, and an electrostatic release line is provided between the third conductive pattern 240 and the fourth conductive pattern 250 .
[0127] Figure 25 The partial structure diagram of the area corresponding to the DP side in the light shielding layer is schematically shown. Figure 25 The fifth conductive pattern 260 corresponds to the Vcom line, and the fifth conductive pattern 260 is electrically connected to the adjacent sixth conductive pattern 270 through the electrostatic release line. Figure 26 The partial structure diagram of the area corresponding to the DPO side in the light shielding layer is schematically shown. Figure 26 The first conductive pattern 210 corresponds to the Vcom line, the second conductive pattern 220 corresponds to the Data line, and an electrostatic release line 230 is provided between the first conductive pattern 210 and the second conductive pattern 220. The electrostatic release line 230 is electrically connected to the concave corner of the first conductive pattern.
[0128] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.
Claims
1. A mask, characterized in that: include: light-transmitting substrate; A light-shielding layer is provided on one side of the light-transmitting substrate, and includes a first conductive pattern, a second conductive pattern, and an electrostatic release line. A hollow area is provided between the first conductive pattern and the second conductive pattern, and the electrostatic release line is located in the hollow area; the first conductive pattern includes a first edge and a second edge on the side facing the second conductive pattern, and the first edge and the second edge are connected to form a first concave angle. The first end of the electrostatic release line is electrically connected to the first concave angle, and the second end of the electrostatic release line is electrically connected to the second conductive pattern.
2. The mask according to claim 1, wherein: The first end of the static electricity release line extends along the angle bisector of the first concave angle.
3. The mask according to claim 1, wherein: The first concave corner is provided with a first notch, a portion of the first end of the electrostatic release line is located in the first notch, and a gap is provided between the electrostatic release line and a side edge of the first notch.
4. The mask according to claim 3, wherein: Part or all of the first notch is located on a side of the first side and the second side away from the hollow area.
5. The mask according to claim 4, wherein: The side of the first notch includes a first side and a second side, the first side and the second side are parallel and opposite to each other, and the first end of the electrostatic release line is located between the first side and the second side; The first notch also includes a first bottom edge and a second bottom edge, the first bottom edge connects the first side edge and the electrostatic release line, and the first bottom edge is parallel to the first side, the second bottom edge connects the second side edge and the electrostatic release line, and the second bottom edge is parallel to the second side.
6. The mask according to claim 1, wherein: The first concave corner is provided with a first notch, the first notch includes a first side and a second side, the first side and the electrostatic release line form a first gap, the second side and the electrostatic release line form a second gap, and the first gap and / or the second gap are not connected to the hollow area.
7. The mask according to claim 6, wherein: The first notch is quadrilateral, and the diagonal of the first notch coincides with the angle bisector of the first concave angle.
8. The mask according to claim 3, wherein: Part or all of the first notch is located on a side of the first side and the second side close to the hollow area.
9. The mask according to claim 8, wherein: The first side is provided with a first protrusion protruding toward the hollow area, the second side is provided with a second protrusion protruding toward the hollow area, and the first protrusion and the second protrusion enclose the first notch.
10. The mask according to claim 3, wherein: The first notch is symmetrically arranged relative to the angle bisector of the first concave angle.
11. The mask according to claim 3, wherein: A light shielding portion is provided in the gap, and the light shielding portion is in an island shape in the gap.
12. The mask according to any one of claims 1 to 11, characterized in that: The electrostatic release line includes a first line, a second line, and a transition line connecting the first line and the second line, the first line extends along a first direction, the second line extends along a second direction, the first direction and the second direction intersect, and the line width of the transition line is equal to the line width of the first line and the second line.
13. The mask according to claim 12, wherein: The transition line is an arc.
14. The mask according to any one of claims 1 to 11, characterized in that: The second conductive pattern includes a third side and a fourth side on a side facing the first conductive pattern. The third side and the fourth side are connected to form a second concave angle. The second end of the electrostatic release line is electrically connected to the second concave angle.
15. The mask according to claim 14, wherein: A straight-line distance between the first concave angle and the second concave angle is greater than or equal to 10 μm.
16. The mask according to any one of claims 1 to 11, characterized in that: The line width of the electrostatic release line is L, 0.5 μm≤L≤1.0 μm.
17. The mask according to any one of claims 1 to 11, characterized in that: The first conductive pattern includes a first conductive portion protruding toward the second conductive pattern, the second conductive pattern includes a second conductive portion, the first conductive portion and the second conductive portion are directly opposite, a minimum distance d between the first conductive portion and the second conductive portion, and a width w of the first conductive portion along a direction perpendicular to the minimum distance between the first conductive portion and the second conductive portion; d≤10μm, and w≤500μm.
18. The mask according to any one of claims 1 to 11, characterized in that: The static electricity release line is arranged close to the edge of the mask.
19. A display panel, characterized in that: The display panel comprises a plurality of film layers, and at least one layer of the plurality of film layers is produced by photolithography using the mask according to any one of claims 1 to 18.
Citation Information
Patent Citations
Mask plate, display panel and preparation method of display panel
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