Preparation system and preparation method of ion trap

Abstract

The invention discloses a preparation system of an ion trap. The system comprises an ultrafast laser direct writing system, chemical etching equipment, high-temperature annealing equipment and coating equipment. The ultrafast laser direct writing system modifies a target area of the ion trap preparation base material, the chemical etching equipment removes the modified target area in the ion trap preparation base material to obtain a groove structure of the ion trap, and the high-temperature annealing equipment performs high-temperature annealing on the ion trap preparation base material to obtain the groove structure of the ion trap. The surface of the groove structure of the ion trap is smoothed, and the surface of the ion trap preparation base material is coated by the coating equipment. According to the technical scheme, the processing precision of the ion trap can be better improved, so that the overall performance of the ion trap is improved.

Description

Technical Field

[0001] The present application belongs to the technical field of ion trap processing, and in particular, relates to a system and method for preparing an ion trap. Background Art

[0002] An ion trap is a device that uses an electric field to capture, store, and manipulate ions. Traditional ion traps, such as blade traps, quadrupole ion traps, and ion trap chips, are usually processed using semiconductor processes. This process faces the problem of secondary processing and alignment of the ion trap preparation substrate and low manual assembly accuracy during the manufacturing process, which limits the application of ion trap technology in quantum information processing. With the advancement of science and technology, people have higher and higher requirements for the processing accuracy of ion traps, and the traditional semiconductor processing ion trap process can no longer meet the preparation requirements of ion traps. Summary of the invention

[0003] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a method that can better meet the needs of actual products.

[0004] In the first aspect, the present application provides a system for preparing an ion trap, including an ultrafast laser direct writing system, a chemical etching device, a high-temperature annealing device, and a coating device. The ultrafast laser direct writing system includes a laser, a laser beam expansion and collimation element group, an aberration correction element group, and an objective lens. The laser beam emitted by the laser is subjected to beam expansion and collimation processing by the laser beam expansion and collimation element group, and after the aberration correction element group performs aberration correction processing, the laser beam is converged by the objective lens and projected to the target area of ​​the ion trap preparation substrate to modify the target area of ​​the ion trap preparation substrate; the chemical etching device is used to remove the modified target area in the ion trap preparation substrate to obtain the groove structure of the ion trap; the high-temperature annealing device is used to perform high-temperature annealing on the ion trap preparation substrate to achieve smoothing of the groove structure surface of the ion trap; the coating device is used to coat the surface of the ion trap preparation substrate.

[0005] In some embodiments, the ultrafast laser direct writing system further includes a first three-dimensional translation stage and a second three-dimensional translation stage, wherein the objective lens is disposed on the first three-dimensional translation stage, and the ion trap preparation substrate is disposed on the second three-dimensional translation stage.

[0006] In some embodiments, the laser beam expansion and collimation element group further includes a beam expander, an attenuator, a collimating lens group and a reflecting lens group, and the collimating lens group includes a collimating lens, a half wave plate and a quarter wave plate sequentially arranged in the optical path.

[0007] In some embodiments, the aberration correction element group is arranged between the beam expander and the collimator lens group of the laser beam expansion and collimation element group.

[0008] In some embodiments, the aberration correction element group includes a 4F filter and a spatial light modulator, wherein the 4F filter includes a first lens, a pinhole, and a second lens arranged in sequence, and the spatial light modulator is arranged between the second lens and the collimating lens group.

[0009] In some embodiments, the chemical etching device includes a temperature control device and an etching chamber disposed in the temperature control device, wherein the temperature control device includes a closed electric constant temperature blast oven.

[0010] In some embodiments, the coating device includes one of a magnetron sputtering coating device and an electron beam evaporation coating device.

[0011] In some embodiments, the heating component of the high temperature annealing apparatus includes a muffle furnace.

[0012] In some embodiments, the ion trap fabrication substrate is a transparent medium.

[0013] In a second aspect, the present application provides a method for preparing an ion trap based on the preparation system in any of the above embodiments, the method comprising:

[0014] After the laser beam is expanded and collimated by the laser beam expansion and collimation element group and the aberration correction element group, the laser beam is converged by the objective lens and projected to the target area of ​​the ion trap preparation substrate to modify the target area of ​​the ion trap preparation substrate. Then, the modified target area in the ion trap preparation substrate is removed by a chemical etching device to obtain the groove structure of the ion trap. Then, the ion trap preparation substrate is subjected to high temperature annealing by a high temperature annealing device to achieve smoothing of the surface of the groove structure of the ion trap, and finally, the surface of the ion trap preparation substrate is coated by a coating device.

[0015] In the embodiment of the present application, the target area of ​​the ion trap preparation substrate is first modified by an ultrafast laser direct writing system, and then the modified area is etched and removed by a chemical etching device. This process can focus the laser at different depths of the ion trap preparation substrate by changing the focal plane, thereby achieving all laser processing of the ion trap preparation substrate in one fixation, solving the problem of secondary processing alignment required in the traditional manufacturing process. The ion trap preparation substrate is then subjected to high-temperature annealing treatment to improve the flatness of the surface of the ion trap preparation substrate, thereby improving the performance of the ion trap, and finally the surface of the ion trap preparation substrate that has completed the high-temperature annealing process is coated by a coating device to achieve the preparation of the ion trap. The above preparation process does not require manual assembly, which greatly improves the processing accuracy of the ion trap.

[0016] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0018] Figure 1 A system architecture diagram of an ion trap preparation system provided in an embodiment of the present application;

[0019] Figure 2 A schematic diagram of an optical path of an ultrafast laser direct writing system provided in an embodiment of the present application;

[0020] Figure 3 A schematic diagram of the optical path of another ultrafast laser direct writing system provided in an embodiment of the present application;

[0021] Figure 4 A schematic diagram of the optical path of the laser beam expansion and collimation element group provided in an embodiment of the present application;

[0022] Figure 5 A schematic diagram of an optical path of another ultrafast laser direct writing system provided in an embodiment of the present application;

[0023] Figure 6 A schematic diagram of an optical path of another ultrafast laser direct writing system provided in an embodiment of the present application;

[0024] Figure 7 A schematic diagram of the structure of a 4F filter provided in an embodiment of the present application;

[0025] Figure 8 An architectural diagram of a chemical etching device provided in an embodiment of the present application;

[0026] Fig. 9 A schematic diagram of a process for cleaning a substrate for preparing an ion trap provided in an embodiment of the present application;

[0027] Fig.10 A schematic diagram of the process of preparing an ion trap provided in an embodiment of the present application. DETAILED DESCRIPTION

[0028] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0029] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0030] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0031] In the description of this application, "first feature" or "second feature" may include one or more of the features.

[0032] In the description of the present application, “plurality” means two or more.

[0033] In the description of the present application, a first feature being “on” or “under” a second feature may include that the first and second features are directly in contact with each other, or may include that the first and second features are not in direct contact with each other but are in contact with each other via another feature therebetween.

[0034] In the description of the present application, “above”, “over” and “above” a first feature to a second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature.

[0035] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0036] The present application provides a system for preparing an ion trap. Figure 1 The system architecture diagram of the ion trap preparation system provided in the embodiment of the present application is as follows: Figure 1 As shown, the ion trap preparation system A includes an ultrafast laser direct writing system 1, a chemical etching device 2, a high temperature annealing device 3 and a coating device 4.

[0037] Figure 2 A schematic diagram of an optical path of an ultrafast laser direct writing system provided in an embodiment of the present application is shown in FIG. Figure 2 As shown, the ultrafast laser direct writing system 1 includes a laser 11, a laser beam expansion and collimation element group 12, an aberration correction element group 13 and an objective lens 14. The laser 11 converts electrical power into laser light and emits it. The emitted laser light beam is expanded and collimated by the laser beam expansion and collimation element group 12, and the aberration correction element group 13 is subjected to aberration correction. The aberration correction element group 13 utilizes the characteristics of optical Fourier transform to realize laser spatial frequency modulation and analysis, thereby improving the beam quality. The objective lens 14 converges the laser light beam, so that the laser light emitted by the laser 11 converges to the diffraction limit, and is projected to the target area of ​​the ion trap preparation substrate 5 at the focus of the objective lens 14 with extremely high energy, so that the target area of ​​the ion trap preparation substrate 5 is modified.

[0038] In some embodiments, the laser 11 includes a frequency doubling crystal for increasing the energy of the laser beam emitted by the laser 11 .

[0039] In some embodiments, after the ultrafast laser direct writing system 1 completes the modification of the target area of ​​the ion trap preparation substrate 5, the chemical etching equipment 2 removes the modified target area in the ion trap preparation substrate 5 to obtain the groove structure of the ion trap. The formation of the groove structure enables the ion trap preparation substrate 5 to achieve electrode segmentation after subsequent coating by the coating equipment 4.

[0040] Furthermore, the high temperature annealing device 3 is used to perform high temperature annealing on the ion trap substrate 5 to smooth the surface of the groove structure of the ion trap, and then the coating device 4 is used to coat the surface of the ion trap substrate 5 .

[0041] In the embodiment of the present application, the ultrafast laser direct writing system 1 modifies the target area of ​​the ion trap preparation substrate 5, and the chemical etching device 2 etches and removes the modified area. This process can realize all laser processing of the ion trap preparation substrate 5 in one fixation, solving the problem of secondary processing alignment required in the traditional manufacturing process. The high-temperature annealing device 3 performs high-temperature annealing treatment on the ion trap preparation substrate 5 to improve the surface flatness of the ion trap preparation substrate 5, thereby improving the overall performance of the ion trap chip product. Finally, the coating device 4 coats the surface of the ion trap preparation substrate 5 that has completed the annealing treatment, thereby realizing the preparation of the ion trap. The above preparation process does not require manual assembly, which greatly improves the processing accuracy of the ion trap.

[0042] In some embodiments, a three-dimensional translation stage may be provided to fix the objective lens and the ion trap to prepare the substrate 5. Figure 3 This is another optical path schematic diagram of an ultrafast laser direct writing system provided in an embodiment of the present application. Figure 3 As shown, the ultrafast laser direct writing system 1 also includes a first three-dimensional translation stage 151 and a second three-dimensional translation stage 152, the objective lens 14 is arranged on the first three-dimensional translation stage 151, and is controlled to move by the first three-dimensional translation stage 151, and the ion trap preparation substrate 5 is arranged on the second three-dimensional translation stage 152, and is controlled to move by the second three-dimensional translation stage 152. Exemplarily, both the first three-dimensional translation stage 151 and the second three-dimensional translation stage 152 can be nanometer-level high-precision three-axis displacement stages, wherein the first three-dimensional translation stage 15 is a Z translation stage that can only move along the Z direction, and the second three-dimensional translation stage 152 is an XY translation stage that can only move on the XY plane, and the first three-dimensional translation stage 151 and the second three-dimensional translation stage 152 can jointly realize extremely fine laser position adjustment and control in three orthogonal directions of X, Y, and Z.

[0043] Figure 4 A schematic diagram of the optical path of the laser beam expansion and collimation element group provided in an embodiment of the present application.

[0044] In some embodiments, Figure 4 As shown, the laser beam expansion and collimation element group 12 includes a beam expander 121, an attenuator 122, a collimating lens group 123 and a reflecting lens group 124, wherein the collimating lens group 123 includes a collimating lens 123a, a half wave plate 123b and a quarter wave plate 123c which are sequentially arranged in the optical path.

[0045] In this embodiment, the laser emitted by the laser 11 first passes through the attenuator 122 to absorb or reflect part of the light energy, and then passes through the beam expander 121 to expand the laser diameter and reduce the divergence angle of the laser, thereby reducing the power density of the laser, thereby avoiding damage to the ion trap preparation substrate 5 caused by high-energy laser. The collimator group 123 is used to convert the laser into a parallel beam, which helps to improve the working effect of other components in the laser beam expansion and collimation element group 12, thereby improving the resolution and accuracy of the entire ultrafast laser direct writing system 1. The reflector group 124 is used to change the transmission direction of the laser, so as to facilitate the overall layout of the laser beam expansion and collimation element group 12.

[0046] Figure 5 A schematic diagram of an optical path of an ultrafast laser direct writing system provided in an embodiment of the present application is shown below: Figure 6 A schematic diagram of an optical path of another ultrafast laser direct writing system provided in an embodiment of the present application, Figure 7 A schematic diagram of the structure of the 4F filter provided in an embodiment of the present application.

[0047] In some embodiments, Figure 5 As shown, the aberration correction element group 13 is arranged between the beam expander 121 and the collimator lens group 123 of the laser beam expansion and collimation element group 12.

[0048] In some embodiments, Figure 6 As shown, the aberration correction element group 13 also includes a 4F filter 131 and a spatial light modulator 132. Figure 7 As shown, the 4F filter 131 includes a first lens 131a, a pinhole 131b and a second lens 131c arranged in sequence. The 4F filter 131 can remove or weaken unnecessary frequencies in the laser, thereby improving the quality of the laser beam. The spatial light modulator 132 is arranged between the second lens 131c and the collimating lens group 123. The laser passes through the 4F filter 131 and is incident on the spatial light modulator 132, so that the spatial light modulator 132 performs phase compensation to compensate for the aberration generated by the laser after passing through the attenuator 122, the beam expander 121 and the 4F filter 131, and obtains a plane phase laser, thereby further improving the beam quality and processing accuracy.

[0049] Figure 8 This is an architectural diagram of the chemical etching equipment provided in an embodiment of the present application.

[0050] In some embodiments, Figure 8As shown, the chemical etching device 2 includes a temperature control device 21 and an etching chamber 211 disposed in the temperature control device. Exemplarily, the temperature control device can be a closed electric constant temperature blast oven. After the target area of ​​the ion trap preparation substrate 5 is laser modified, the ion trap preparation substrate 5 is placed in the etching chamber 211, and the temperature is heated to about one thousand degrees Celsius by the temperature control device 21 and kept constant for several hours, and the modified area of ​​the ion trap preparation substrate 5 is removed by chemical reaction to obtain the groove structure of the ion trap.

[0051] In some embodiments, the heating component of the high temperature annealing device 3 includes a muffle furnace. The groove structure of the chemically etched ion trap is cleaned with distilled water and blown dry, and then placed in the heating component of the high temperature annealing device 3 and heated to the annealing temperature, and the surface of the groove structure of the ion trap is smoothed by using the principle of micro-melting of the surface of the ion trap preparation substrate 5 at high temperature.

[0052] In some embodiments, the coating device 4 includes one of a magnetron sputtering coating device and an electron beam evaporation coating device. Before coating, the ion trap preparation substrate 5 is cleaned. Fig. 9 The present application provides a schematic diagram of a process for cleaning a substrate for preparing an ion trap, such as Fig. 9 As shown, the specific process of cleaning the ion trap preparation substrate 5 is as follows:

[0053] Step 901: washing and boiling in acetone at 80°C for 10 min three times;

[0054] Step 902: Soak in methanol for 1 minute;

[0055] Step 903: Rinse the ladder trough with ultrapure water for 20 minutes;

[0056] Step 904: soaking and dehydrating in anhydrous ethanol;

[0057] Step 905: Bake in an oven at 100 degrees Celsius for 20 minutes.

[0058] When the coating device 4 is a magnetron sputtering coating device, the specific steps for coating the groove area of ​​the ion trap are as follows: fix the ion trap preparation substrate 5 with an aluminum alloy metal plate with a central hollow groove, place it in the center of the sputtering machine tray, rotate the tray if an inclined target is used, and reciprocate the target material along a straight line if a vertical target is used, evacuate to a working vacuum of 2E-4Pa, start heating, heat to 80℃ at about 2.3℃ / min, and keep warm for 25 minutes for 1 hour. The process vacuum during coating is 5E-1Pa. After the coating is completed, start cooling, cool to room temperature at about 1.2℃ / min, and keep warm for 2 hours before opening the chamber. The magnetron sputtering coating device can achieve the deposition of thin films at a lower temperature of the ion trap preparation substrate 5, which helps to improve the adhesion between the thin film and the ion trap preparation substrate 5, and is suitable for coating temperature-sensitive substrates.

[0059] When the coating device 4 is an electron beam evaporation coating device, the specific steps for coating the groove area of ​​the ion trap are as follows: fix the ion trap preparation substrate 5 with an aluminum alloy metal plate with a central hollow groove, place it in the center of the evaporation machine tray, rotate the tray, evacuate to a working vacuum of 2E-4Pa, start heating, heat to 80°C at about 3.5°C / min, take 17 minutes to keep warm for 1 hour, then start coating, and after completion, cool to room temperature at about 2.6°C / min and keep warm for 2 hours to open the chamber. The electron beam evaporation coating device is carried out in a high vacuum environment and can produce high-purity thin films. The energy of electron beam evaporation directly acts on the coating material, with high evaporation efficiency and high energy utilization, and is suitable for coating substrates with high temperature tolerance.

[0060] In some embodiments, the ion trap preparation substrate 5 is a transparent medium. Traditional semiconductor processes use semiconductor materials such as silicon to manufacture ion traps. Since semiconductor materials such as silicon have serious absorption losses on microwaves and have a narrow energy band gap, ion traps are prone to failure under high temperature and high pressure conditions, and the small band gap width also limits the light transmission performance of the ion trap. In the embodiments of the present application, a transparent medium can be used as the ion trap preparation substrate 5, such as quartz glass, sapphire, diamond, etc. These transparent media have almost no absorption of microwaves, and have good voltage resistance, light transmission characteristics and thermal conductivity, and can also greatly improve the manufacturing accuracy of the ion trap.

[0061] The present application also provides a method for preparing an ion trap according to the above-mentioned preparation system. Fig.10 The flowchart of the ion trap preparation method provided in the embodiment of the present application is as follows: Fig.10 As shown, including:

[0062] Step 1001: After the laser beam is expanded and collimated by the laser beam expansion and collimation element group 12 in the ultrafast laser direct writing system 1 and the aberration correction element group 13 is processed for aberration correction, the laser beam is converged by the objective lens 14 and projected onto the target area of ​​the ion trap preparation substrate 5, so as to modify the target area of ​​the ion trap preparation substrate 5;

[0063] Step 1002: chemical etching equipment 2 removes the modified target area in the ion trap preparation substrate 5 to obtain a groove structure of the ion trap;

[0064] Step 1003: high temperature annealing is performed on the ion trap preparation substrate 5 by a high temperature annealing device 3 to achieve smoothing of the surface of the groove structure of the ion trap;

[0065] Step 1004: The coating device 4 coats the surface of the ion trap preparation substrate 5 to prepare the ion trap.

[0066] The method for preparing an ion trap provided in the embodiment of the present application first modifies the target area of ​​the ion trap preparation substrate 5 by an ultrafast laser direct writing system 1, and then etches and removes the modified area by a chemical etching device 2. In this process, the laser can be focused at different depths of the ion trap preparation substrate 5 by changing the focal plane, thereby achieving all laser processing of the ion trap preparation substrate 5 in one fixation, solving the problem of secondary processing alignment required in the traditional manufacturing process. The ion trap preparation substrate 5 is then subjected to high-temperature annealing treatment to improve the flatness of the surface of the ion trap preparation substrate 5, thereby improving the performance of the ion trap. Finally, the surface of the ion trap preparation substrate 5 that has completed the high-temperature annealing process is coated by a coating device 4, thereby achieving the preparation of the ion trap. The above-mentioned preparation process does not require manual assembly, which greatly improves the processing accuracy of the ion trap.

[0067] For the preparation method in this embodiment, the specific content can refer to the description in the above-mentioned preparation system embodiment.

[0068] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A system for preparing an ion trap, characterized in that: include: An ultrafast laser direct writing system, the ultrafast laser direct writing system comprising a laser, a laser beam expansion and collimation element group, an aberration correction element group and an objective lens, the laser beam emitted by the laser undergoes beam expansion and collimation processing by the laser beam expansion and collimation element group, and after the aberration correction element group undergoes aberration correction processing, the laser beam is converged by the objective lens and projected onto a target area of ​​a substrate for preparing an ion trap, so as to modify the target area of ​​the substrate for preparing an ion trap; A chemical etching device, used to remove the modified target area in the ion trap preparation substrate to obtain the groove structure of the ion trap; A high temperature annealing device, used for performing high temperature annealing on the ion trap preparation substrate to achieve smoothing of the surface of the groove structure of the ion trap; The coating equipment is used to coat the surface of the ion trap preparation substrate.

2. The preparation system according to claim 1, characterized in that: The ultrafast laser direct writing system also includes: A first three-dimensional translation stage and a second three-dimensional translation stage, wherein the objective lens is arranged on the first three-dimensional translation stage, and the ion trap preparation substrate is arranged on the second three-dimensional translation stage.

3. The preparation system according to claim 1, characterized in that: The laser beam expansion and collimation element group also includes a beam expander, an attenuator, a collimating lens group and a reflecting mirror group. The collimating lens group includes a collimating lens, a half wave plate and a quarter wave plate which are sequentially arranged in the optical path.

4. The preparation system according to claim 3, characterized in that: The aberration correction element group is arranged between the beam expander of the laser beam expansion and collimation element group and the collimator lens group.

5. The preparation system according to claim 4, characterized in that: The aberration correction element group includes a 4F filter and a spatial light modulator. The 4F filter includes a first lens, a pinhole, and a second lens arranged in sequence. The spatial light modulator is arranged between the second lens and the collimating lens group.

6. The preparation system according to any one of claims 1 to 5, characterized in that: The chemical etching equipment comprises a temperature control device and an etching chamber arranged in the temperature control device, and the temperature control device comprises a closed electric constant temperature blast oven.

7. The preparation system according to claim 1, characterized in that: The coating equipment includes one of a magnetron sputtering coating equipment and an electron beam evaporation coating equipment.

8. The preparation system according to claim 1, characterized in that: The heating component of the high temperature annealing equipment includes a muffle furnace.

9. The preparation system according to claim 1, characterized in that: The ion trap preparation substrate is a transparent medium.

10. A method for preparing an ion trap based on the preparation system according to any one of claims 1 to 9, characterized in that: include: The laser beam emitted by the laser in the ultrafast laser direct writing system is expanded and collimated by the laser beam expansion and collimation element group and filtered by the 4F filter. The laser beam is then converged by the objective lens and projected onto the target area of ​​the ion trap preparation substrate, so as to modify the target area of ​​the ion trap preparation substrate. A chemical etching device removes the modified target area in the ion trap preparation substrate to obtain a groove structure of the ion trap; A high temperature annealing device performs high temperature annealing on the ion trap preparation substrate to achieve smoothing of the surface of the groove structure of the ion trap; The coating equipment coats the surface of the ion trap preparation substrate.

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