A partitioned wafer automatic heating device

Abstract

The present invention relates to the field of wafer heating technology, specifically to a partitioned load-bearing automatic wafer heating device, comprising a frame, conveyor frames are fixedly arranged on the left and right sides of the top of the frame, and a fixed frame is fixedly arranged on the top of the frame through a supporting column, a material shifting assembly is arranged at the bottom of the fixed frame, and a heating assembly is also arranged in the middle of the bottom of the fixed frame, and a pre-treatment frame, a heating frame and a cooling frame are sequentially arranged inside the frame from left to right. The present invention automatically feeds wafers through the conveyor frame on the left, and cooperates with the material shifting assembly to complete the cleaning and drying treatment of the wafer inside the pre-treatment frame, then completes the heating treatment of the upper and lower surfaces inside the heating frame, and finally completes the cooling treatment of the wafer inside the cooling frame, and sends the wafer out through the conveyor frame on the right, realizing automatic loading, cleaning, drying, heating, cooling and discharging operations of the wafer, which greatly improves the processing efficiency of the wafer.

Description

Technical Field

[0001] The invention relates to the technical field of wafer heating, and in particular to a partitioned bearing type wafer automatic heating device. Background Art

[0002] In the complex photolithography process using semiconductor wafers as carriers, the photoresist coating process, development process, baking process, exposure process, etc. are very important processes. After these important processes, the wafers need to be placed in a hot plate for baking; therefore, the temperature uniformity of the hot plate directly affects the effects of photoresist coating, exposure, and development.

[0003] In order to keep the wafer temperature uniform in a general wafer heating device, ceramic balls are added to the surface of the disk to form a tiny gap between the wafer and the disk surface. However, the temperature sensor only has one point measurement, and cannot measure the wafer surface temperature or adjust the temperature. As a result, the temperature from the center to the edge of the wafer is inconsistent.

[0004] To this end, we proposed a partitioned wafer automatic heating device. Summary of the invention

[0005] In view of the deficiencies in the prior art, the present invention provides a partitioned load-bearing wafer automatic heating device to solve the above-mentioned technical defects.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solutions: a partitioned load-bearing wafer automatic heating device, comprising a frame, a conveying frame is fixedly arranged on the left and right sides of the top of the frame, and a fixed frame is fixedly arranged on the top of the frame through a supporting column, a material moving assembly is arranged at the bottom of the fixed frame, and a heating assembly is also arranged in the middle of the bottom of the fixed frame, and a pre-treatment frame, a heating frame and a cooling frame are arranged in sequence from left to right inside the frame;

[0007] The heating assembly includes a closed frame 2 and a heating frame 1, a servo electric cylinder 4 is fixedly arranged in the middle of the top of the fixed frame, and the closed frame 2 is movably arranged in the middle of the bottom of the fixed frame, the driving end of the servo electric cylinder 4 is fixedly connected to the top of the closed frame 2, a micro electric cylinder is fixedly arranged inside the closed frame 2, and the heating frame 1 is movably arranged at the bottom of the closed frame 2, and the driving end of the micro electric cylinder is fixedly connected to the top of the heating frame 1;

[0008] A heating frame 2 is fixedly arranged at the bottom of the interior of the heating frame, and the bottom of the heating frame 1 and the top of the heating frame 2 are both composed of a plurality of heating units and temperature detectors. Servo electric cylinders 7 are fixedly arranged around the inner wall of the heating frame, and positioning blocks are fixedly arranged at the driving ends of the four servo electric cylinders 7.

[0009] Preferably, the material moving assembly includes a servo linear slide, and servo linear slides are fixedly arranged on the front and rear sides of the bottom of the fixed frame, and a plurality of servo electric cylinders are fixedly arranged on the bottom of the two servo linear slides, and movable frames are fixedly arranged on the driving ends of the two servo electric cylinders on the front and rear sides, and three movable frames are arranged below the servo linear slide.

[0010] Preferably, an electric slide is fixedly provided at the bottom of the movable frame, and two sliding blocks are slidably provided at the bottom of the electric slide, and a servo electric cylinder 2 is fixedly provided on the top of the two sliding blocks, and an adsorption block 1 is fixedly provided on the driving ends of the two servo electric cylinders 2.

[0011] Preferably, an ultrasonic generator is fixedly arranged at the bottom of the pretreatment frame, and a closing plate 1 is slidably arranged in the middle of the pretreatment frame, servo electric cylinders 5 are fixedly arranged on the front and rear sides of the left side of the frame, and the driving ends of the two servo electric cylinders 5 are respectively fixedly connected to the left sides of the front and rear sides of the closing plate 1, a plurality of drainage grooves are arranged on the top of the closing plate 1, and a drainage pipe is also fixedly arranged on the left side of the drainage groove, the interior of the drainage groove is connected to the interiors of a plurality of drainage grooves, and a liquid pump is fixedly arranged on the bottom end of the drainage groove.

[0012] Preferably, a closed frame 1 is movably provided on the left side of the bottom of the fixed frame, and two adsorption blocks 2 are movably provided inside the closed frame 1 through an electric push rod, and two servo electric cylinders 3 are fixedly provided on the left side of the top of the fixed frame, and the driving ends of the two servo electric cylinders 3 are fixedly connected to the top of the closed frame 1.

[0013] Preferably, a support frame is fixedly provided at the bottom of the cooling frame, a plurality of air blowing ports are provided at the top of the support frame, a closing plate 2 is movably provided in the middle of the cooling frame, and a plurality of air blowing slots are provided at the bottom of the closing plate 2, servo electric cylinders 6 are fixedly provided at the front and rear of the right side of the frame, and the driving ends of the two servo electric cylinders 6 are respectively fixedly connected to the front and rear of the right side of the closing plate 2.

[0014] Preferably, an air inlet pipe is fixedly provided on the right side of the closing plate 2, and the interior of the air inlet pipe is connected with the interior of several blowing grooves inside the closing plate 2. An air pump is provided on the right side of the interior of the frame, and the air outlet end of the air pump is respectively connected with several blowing ports inside the support frame and the bottom end of the air inlet pipe.

[0015] Preferably, an air duct one is fixedly provided on the right side of the back side of the rack, and the two ends of the air duct one are respectively connected to the interior of the cooling frame and the heating frame, and an air duct two is fixedly provided on the left side of the back side of the rack, and the two ends of the air duct two are respectively connected to the interior of the heating frame and the pretreatment frame.

[0016] Compared with the prior art, it has the following beneficial effects:

[0017] 1. In the present invention, when performing a heating treatment on a wafer, the wafer to be processed is conveyed to the left side of the rack by the conveyor rack on the left side, and the wafer on the conveyor rack on the left side is transferred to the interior of a pre-treatment frame by using a material shifting assembly, and the surface of the wafer is first cleaned inside the pre-treatment frame to completely remove tiny pollutants from the surface of the wafer to ensure that the cleanliness of the surface of the wafer reaches a high standard, and then the cleaned wafer is dried above the interior of the pre-treatment frame, and after the cleaning and drying of the wafer are completed, the material shifting assembly is cooperated to transfer the wafer from the interior of the pre-treatment frame to the interior of the heating frame, and the heating assembly at the bottom middle of the fixed frame is cooperated inside the heating frame to perform synchronous heating treatment on the upper and lower surfaces of the wafer inside the heating frame, and the heating assembly is used to seal the interior of the heating frame, so that the interior of the processing chamber of the wafer is filled with inert gas, and the wafer is heated and protected by the inert gas, and the wafer is heated according to the temperature of the wafer. The device automatically feeds the wafers through the conveyor rack on the left, and cleans and dries the wafers in the pretreatment frame in cooperation with the material transfer assembly, then heats the upper and lower surfaces of the wafers in the heating frame, and finally cools the wafers in the cooling frame, and sends the wafers out through the conveyor rack on the right, thereby realizing automatic loading, cleaning, drying, heating, cooling and unloading operations of the wafers, and greatly improving the processing efficiency of the wafers.

[0018] 2. In the present invention, when the wafer is moved, the servo linear slide is used to control the leftmost servo electric cylinder 1 to move to the top of the conveyor frame on the left, and the driving end of the servo electric cylinder 1 is used to control the movable frame to move downward. At the same time, the driving end of the servo electric cylinder 2 is used to control the adsorption block 1 to move toward the upper surface of the wafer, and the spacing between the two sliding blocks at the bottom of the movable frame is adjusted according to the size specifications of the wafer, so that the bottoms of the two adsorption blocks 1 are respectively adsorbed and connected with the front and back sides of the upper surface of the wafer, thereby ensuring the stability of the wafer during the moving process and improving the moving stability of the moving assembly for wafers of different specifications.

[0019] 3. In the present invention, after the wafer that has been cleaned and dried is sent to the top of the heating frame 2 inside the heating frame by the material transfer assembly, the driving ends of the four servo electric cylinders 7 are used to control the positioning blocks to approach the outer peripheral surface of the wafer, and the four positioning blocks on the four sides are used to perform position correction processing on the top of the heating frame 2 to ensure that the wafer is in the top center position of the heating frame 2, thereby performing a grid layout distribution on the wafer. When the upper and lower surfaces of the wafer are heated, the closed frame 2 is controlled to move downward by the driving end of the servo electric cylinder 4, and the top of the heating frame is closed by the closed frame 2. Then, the heating frame 1 is controlled to move downward by the micro-electric cylinder driving end inside the closed frame 2 until the bottom of the heating frame 1 contacts the top of the wafer, and the upper and lower surfaces of the wafer are heated at each grid point through the bottom of the heating frame 1 and the top of the heating frame 2. At the same time, the temperature of each grid point on the upper and lower surfaces of the wafer is monitored to improve the uniformity of heating at each position of the wafer.

[0020] 4. In the present invention, an air pump inside the frame is used to blow inert gas toward the upper and lower surfaces of the wafer through the air inlet pipe and the support frame, and the wafer is cooled by the inert gas. The inert gas inside the cooling frame enters the interior of the heating frame through the air duct 1, so that the interior of the heating frame is in a protective atmosphere of the inert gas during heating. In addition, when the wafer is dried, the inert gas containing heat inside the heating frame enters the interior of the pretreatment frame through the air duct 2, and the wafer is efficiently dried by the inert gas containing high heat, thereby realizing the continuous use of the inert gas and improving the utilization rate of resources.

[0021] Other features and advantages of the present invention will be set forth in the following description, and in part will become apparent from the description, or may be understood through implementation of the present invention. The objects and other advantages of the present invention may be realized and obtained through the structures indicated in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic diagram of a partitioned load-bearing wafer automatic heating device structure according to an embodiment of the present invention;

[0023] Figure 2 A schematic diagram of the bottom structure of a fixing frame according to an embodiment of the present invention;

[0024] Figure 3 It is a schematic diagram of a structure of a movable frame and an adsorption block according to an embodiment of the present invention;

[0025] Figure 4 It is a schematic diagram of the second closing plate and the supporting frame structure according to an embodiment of the present invention;

[0026] Figure 5 A schematic diagram of an ultrasonic generator and a sealing plate structure according to an embodiment of the present invention;

[0027] Figure 6 It is a schematic diagram of the structure of the second closing rack and the first heating rack according to an embodiment of the present invention;

[0028] Figure 7 It is a schematic diagram of the heating frame and the positioning block structure according to an embodiment of the present invention;

[0029] Figure 8 A schematic diagram of the structure of a liquid discharge pipe and an air intake pipe according to an embodiment of the present invention;

[0030] Fig. 9 It is a schematic diagram of the structure of the sealing plate 1 and the drainage trough according to an embodiment of the present invention;

[0031] Fig.10 Schematic diagram of the structure of airway tube 1 and airway tube 2 according to an embodiment of the present invention.

[0032] In the figure, 1, frame; 2, conveying frame; 3, fixed frame; 4, pretreatment frame; 5, heating frame; 6, cooling frame; 7, servo linear slide; 8, servo electric cylinder one; 9, movable frame; 10, servo electric cylinder two; 11, adsorption block one; 12, closed frame one; 13, servo electric cylinder three; 14, adsorption block two; 15, closed frame two; 16, heating frame one; 17, servo electric cylinder four; 18, micro electric cylinder; 19, heating frame two; 20, ultrasonic generator; 21, closed plate one; 22, drainage trough; 23, servo electric cylinder five; 24, drainage pipe; 25, closed plate two; 26, support frame; 27, blowing trough; 28, air inlet pipe; 29, air guide pipe one; 30, air guide pipe two; 31, servo electric cylinder six; 32, electric slide; 33, sliding block; 34, positioning block; 35, servo electric cylinder seven. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] Embodiment 1:

[0035] See also Figures 1 to 10 As shown, a partitioned load-bearing wafer automatic heating device includes a frame 1, a conveying frame 2 is fixedly arranged on the left and right sides of the top of the frame 1, and a fixed frame 3 is fixedly arranged on the top of the frame 1 through a supporting column, a material moving assembly is arranged at the bottom of the fixed frame 3, and a heating assembly is also arranged in the middle of the bottom of the fixed frame 3, and a pretreatment frame 4, a heating frame 5 and a cooling frame 6 are arranged in sequence inside the frame 1 from left to right.

[0036] It should be noted that when the wafer is heated, the wafer to be processed is transported to the left side of the rack 1 by the conveyor rack 2 on the left, and the wafer on the conveyor rack 2 on the left is transferred to the inside of the pretreatment frame 4 by the material shifting assembly. The surface of the wafer is first cleaned inside the pretreatment frame 4 to completely remove tiny pollutants from the surface of the wafer to ensure that the cleanliness of the surface of the wafer reaches a high standard. The cleaned wafer is then dried above the inside of the pretreatment frame 4. After the cleaning and drying of the wafer are completed, the material shifting assembly is used to transfer the wafer from the inside of the pretreatment frame 4 to the inside of the heating frame 5. The heating assembly at the bottom middle of the fixing frame 3 is used inside the heating frame 5 to perform synchronous heating on the upper and lower surfaces of the wafer inside the heating frame 5, and the heating assembly is used to seal the inside of the heating frame 5, so that the inside of the processing chamber of the wafer is filled with inert gas, and the wafer is heated and protected by the inert gas. The size of the circle is heated and the temperature is monitored in different areas to ensure the heating effect of the wafer, and then the wafer in the heating frame 5 is transferred to the inside of the cooling frame 6 by the material moving component, and the upper and lower surfaces of the wafer are cooled by inert gas inside the cooling frame 6, and finally the wafer in the cooling frame 6 is transferred to the conveyor rack 2 on the right by the material moving component, and the heated wafer is sent out by the conveyor rack 2 on the right, thereby completing the automatic heating treatment of the wafer. The device automatically feeds the wafer through the conveyor rack 2 on the left, and cooperates with the material moving component to complete the cleaning and drying treatment of the wafer in the pretreatment frame 4, then completes the heating treatment of the upper and lower surfaces inside the heating frame 5, and finally completes the cooling treatment of the wafer inside the cooling frame 6, and sends the wafer out through the conveyor rack 2 on the right, thereby realizing automatic loading, cleaning, drying, heating, cooling and unloading operations of the wafer, thereby greatly improving the processing efficiency of the wafer.

[0037] Embodiment 2:

[0038] Specifically, in order to realize automatic loading and shifting control of wafers, the specific structure of the shifting component is also disclosed in this embodiment, and the shifting component includes a servo linear slide 7, and the front and rear sides of the bottom of the fixed frame 3 are fixedly provided with a servo linear slide 7, and the bottoms of the two servo linear slides 7 are fixedly provided with a plurality of servo electric cylinders 8, and the driving ends of the two servo electric cylinders 8 on the front and rear sides are fixedly provided with a movable frame 9, and the movable frame 9 is located below the servo linear slide 7 and is provided with three electric slides 32 fixedly provided at the bottom of the movable frame 9, and the bottom of the electric slide 32 is slidingly provided with two sliding blocks 33, and the tops of the two sliding blocks 33 are fixedly provided with servo electric cylinders 10, and the driving ends of the two servo electric cylinders 10 are fixedly provided with adsorption blocks 11.

[0039] It should be noted that when the wafer is being moved, the servo linear slide 7 controls the leftmost servo electric cylinder 8 to move to the top of the conveyor frame 2 on the left, and the driving end of the servo electric cylinder 8 is used to control the movable frame 9 to move downward. At the same time, the driving end of the servo electric cylinder 10 is used to control the adsorption block 11 to move toward the upper surface of the wafer, and the spacing between the two sliding blocks 33 at the bottom of the movable frame 9 is adjusted according to the size specifications of the wafer, so that the bottoms of the two adsorption blocks 11 are respectively adsorbed and connected to the front and back sides of the upper surface of the wafer, thereby ensuring the stability of the wafer during the moving process and improving the moving stability of the moving assembly for wafers of different specifications.

[0040] Embodiment 3:

[0041] Specifically, in order to realize the pretreatment process of the wafer before heating, an ultrasonic generator 20 is fixedly arranged at the bottom of the pretreatment frame 4, and a closing plate 21 is slidably arranged in the middle of the pretreatment frame 4, and a servo electric cylinder 5 23 is fixedly arranged at the front and rear sides of the left side of the frame 1, and the driving ends of the two servo electric cylinders 5 23 are respectively fixedly connected to the left sides of the front and rear sides of the closing plate 21, and a plurality of drainage grooves 22 are arranged on the top of the closing plate 21, and a drainage pipe 24 is also fixedly arranged on the left side of the drainage groove 22, the interior of the drainage groove 22 is connected to the interiors of a plurality of drainage grooves 22, and a liquid pump is fixedly arranged at the bottom end of the drainage groove 22;

[0042] Furthermore, a closed frame 12 is movably provided on the left side of the bottom of the fixed frame 3, and two adsorption blocks 2 14 are movably provided inside the closed frame 12 through an electric push rod, and two servo electric cylinders 3 13 are fixedly provided on the left side of the top of the fixed frame 3, and the driving ends of the two servo electric cylinders 3 13 are fixedly connected to the top of the closed frame 12.

[0043] It should be noted that when performing surface cleaning treatment on the wafer, the wafer is transferred from the conveying rack 2 on the left to the interior of the pretreatment frame 4 through the material moving assembly, and the wafer is placed in the interior of the pretreatment frame 4. At the same time, cleaning liquid is introduced into the interior of the pretreatment frame 4, and the ultrasonic generator 20 is turned on to immerse the wafer in the cleaning liquid and perform ultrasonic cleaning on the wafer. Then, the driving end of the servo electric cylinder 5 23 controls the closing plate 21 to be pushed into the interior of the pretreatment frame 4, and at the same time, the cleaned wafer is placed on the top of the closing plate 21, and the driving end of the servo electric cylinder 3 13 controls the closing frame 12 to move downward until the bottom of the closing frame 12 contacts the inner wall of the pretreatment frame 4, and a drying chamber is formed inside the pretreatment frame 4 through the closing frame 12 and the closing plate 21 inside the pretreatment frame 4, and the cleaning liquid on the surface of the wafer is discharged by the drainage groove 22 on the top of the closing plate 21, and the surface drying treatment of the wafer is completed on the top of the closing plate 21.

[0044] Embodiment 4:

[0045] Specifically, in order to achieve synchronous heating treatment of the upper and lower surfaces of the wafer, the heating assembly includes a closed frame 2 15 and a heating frame 1 16, a servo electric cylinder 4 17 is fixedly arranged in the middle of the top of the fixed frame 3, and the closed frame 2 15 is movably arranged in the middle of the bottom of the fixed frame 3, the driving end of the servo electric cylinder 4 17 is fixedly connected to the top of the closed frame 2 15, a micro electric cylinder 18 is fixedly arranged inside the closed frame 2 15, and the heating frame 1 16 is movably arranged at the bottom of the closed frame 2 15, and the driving end of the micro electric cylinder 18 is fixedly connected to the top of the heating frame 1 16;

[0046] Furthermore, a heating rack 2 19 is fixedly installed at the bottom of the interior of the heating frame 5, and the bottom of the heating rack 1 16 and the top of the heating rack 2 19 are composed of a number of heating units and temperature detectors. Servo electric cylinders 7 35 are fixedly installed around the inner wall of the heating frame 5, and positioning blocks 34 are fixedly installed at the driving ends of the four servo electric cylinders 7 35.

[0047] It should be noted that after the wafer that has been cleaned and dried is sent to the top of the heating frame 2 19 inside the heating frame 5 by the material transfer assembly, the driving ends of the four servo electric cylinders 7 35 are used to control the positioning blocks 34 to approach the outer peripheral surface of the wafer, and the four positioning blocks 34 on all sides are used to perform position correction processing on the top of the heating frame 2 19 to ensure that the wafer is in the top center position of the heating frame 2 19, thereby performing a grid layout distribution on the wafer. When the upper and lower surfaces of the wafer are heated, the closed frame 2 15 is controlled to move downward by the driving end of the servo electric cylinder 4 17, and the top of the heating frame 5 is closed by the closed frame 2 15. Then, the heating frame 1 16 is controlled to move downward by the driving end of the micro-electric cylinder 18 inside the closed frame 2 15 until the bottom of the heating frame 16 contacts the top of the wafer, and the upper and lower surfaces of the wafer are heated at each grid point through the bottom of the heating frame 16 and the top of the heating frame 2 19. At the same time, the temperature of each grid point on the upper and lower surfaces of the wafer is monitored to improve the uniformity of heating at each position of the wafer.

[0048] Embodiment 5:

[0049] Specifically, a support frame 26 is fixedly provided at the bottom of the cooling frame 6, a plurality of air blowing ports are provided at the top of the support frame 26, a closing plate 25 is movably provided in the middle of the cooling frame 6, and a plurality of air blowing slots 27 are provided at the bottom of the closing plate 25, a servo electric cylinder 6 31 is fixedly provided at the front and rear of the right side of the frame 1, and the driving ends of the two servo electric cylinders 6 31 are respectively fixedly connected to the front and rear of the right side of the closing plate 25, an air inlet pipe 28 is fixedly provided on the right side of the closing plate 25, and the interior of the air inlet pipe 28 is communicated with the interior of the plurality of air blowing slots 27 inside the closing plate 25, an air pump is provided on the right side of the frame 1, and the air outlet end of the air pump is respectively communicated with the plurality of air blowing ports inside the support frame 26 and the bottom end of the air inlet pipe 28;

[0050] Furthermore, an air duct 29 is fixedly provided on the right side of the back side of the rack 1, and the two ends of the air duct 29 are respectively connected to the interior of the cooling frame 6 and the heating frame 5, and an air duct 2 30 is fixedly provided on the left side of the back side of the rack 1, and the two ends of the air duct 2 30 are respectively connected to the interior of the heating frame 5 and the pretreatment frame 4.

[0051] It should be noted that when the wafer is cooled, the heated wafer is sent to the inside of the cooling frame 6 by the material transfer assembly, and the wafer is placed on the top of the support frame 26. Then, the driving end of the servo electric cylinder 6 31 controls the closing plate 25 to move to the inside of the cooling frame 6, and the air pump inside the frame 1 blows inert gas to the upper and lower surfaces of the wafer through the air inlet pipe 28 and the support frame 26, and the wafer is cooled by the inert gas. The inert gas inside the cooling frame 6 enters the inside of the heating frame 5 through the air guide pipe 1 29, so that the inside of the heating frame 5 is in a protective atmosphere of inert gas during heating. In addition, when the wafer is dried, the inert gas containing heat inside the heating frame 5 enters the inside of the pretreatment frame 4 through the air guide pipe 2 30, and the wafer is efficiently dried by the inert gas containing high heat, thereby realizing the continuous use of the inert gas and improving the utilization rate of resources.

[0052] Embodiment 6:

[0053] Specifically, this embodiment also discloses a working method of a partitioned load-bearing wafer automatic heating device, comprising the following steps:

[0054] Step 1: When transferring the wafer, the servo linear slide 7 is used to control the leftmost servo electric cylinder 1 8 to move to the top of the conveying rack 2 on the left, and the driving end of the servo electric cylinder 1 8 is used to control the movable rack 9 to move downward. At the same time, the driving end of the servo electric cylinder 2 10 is used to control the adsorption block 11 to move toward the upper surface of the wafer, and the spacing between the two sliding blocks 33 at the bottom of the movable rack 9 is adjusted according to the size specifications of the wafer, so that the bottoms of the two adsorption blocks 11 are respectively adsorbed and connected with the front and rear sides of the upper surface of the wafer;

[0055] Step 2, when performing surface cleaning treatment of the wafer, the wafer is transferred from the conveying rack 2 on the left to the interior of the pretreatment frame 4 through the material moving assembly, the wafer is placed in the interior of the pretreatment frame 4, and the cleaning liquid is introduced into the interior of the pretreatment frame 4, the ultrasonic generator 20 is turned on, the wafer is immersed in the interior of the cleaning liquid, and the wafer is ultrasonically cleaned, and then the driving end of the servo electric cylinder 5 23 controls the closing plate 1 21 to be pushed into the interior of the pretreatment frame 4, and the cleaned wafer is placed on the top of the closing plate 1 21, and the driving end of the servo electric cylinder 3 13 controls the closing frame 12 to move downward until the bottom of the closing frame 12 contacts the inner wall of the pretreatment frame 4, and a drying chamber is formed inside the pretreatment frame 4 through the closing frame 12 and the closing plate 1 21 inside the pretreatment frame 4, and the cleaning liquid on the surface of the wafer is discharged by the drainage groove 22 on the top of the closing plate 1 21, and the surface drying treatment of the wafer is completed at the top of the closing plate 1 21;

[0056] Step 3, after the wafer that has been cleaned and dried is sent to the top of the heating frame 2 19 inside the heating frame 5 by the material transfer assembly, the driving ends of the four servo electric cylinders 7 35 are used to control the positioning blocks 34 to approach the outer peripheral surface of the wafer, and the four positioning blocks 34 on all sides are used to perform position correction processing on the top of the heating frame 2 19 to ensure that the wafer is at the top center position of the heating frame 2 19, so as to perform grid layout distribution on the wafer, and when the upper and lower surfaces of the wafer are heated, the driving end of the servo electric cylinder 4 17 is used to control the closing frame 2 15 to move downward, and the top of the heating frame 5 is closed by the closing frame 2 15, and then the driving end of the micro electric cylinder 18 inside the closing frame 2 15 is used to control the heating frame 1 16 to move downward until the bottom of the heating frame 16 contacts the top of the wafer, and the upper and lower surfaces of the wafer are heated at each grid point through the bottom of the heating frame 16 and the top of the heating frame 2 19, and the temperature of each grid point on the upper and lower surfaces of the wafer is monitored at the same time;

[0057] Step 4, when cooling the wafer, the heated wafer is sent to the inside of the cooling frame 6 through the material transfer assembly, and the wafer is placed on the top of the support frame 26. Then, the driving end of the servo electric cylinder 6 31 controls the closing plate 25 to move to the inside of the cooling frame 6, and the air pump inside the frame 1 blows inert gas to the upper and lower sides of the wafer through the air inlet pipe 28 and the support frame 26, and the wafer is cooled by the inert gas. The inert gas inside the cooling frame 6 enters the inside of the heating frame 5 through the air guide pipe 1 29, so that the inside of the heating frame 5 is in an inert gas protective atmosphere during heating. In addition, when drying the wafer, the inert gas containing heat inside the heating frame 5 enters the inside of the pretreatment frame 4 through the air guide pipe 2 30, and the wafer is efficiently dried by the inert gas containing high heat.

[0058] Meanwhile, the contents not described in detail in this specification belong to the prior art known to those skilled in the art.

[0059] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0060] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A partitioned load-bearing wafer automatic heating device, comprising a frame (1), wherein conveying frames (2) are fixedly arranged on the left and right sides of the top of the frame (1), and a fixing frame (3) is fixedly arranged on the top of the frame (1) via a supporting column, characterized in that: A material moving assembly is arranged at the bottom of the fixed frame (3), and a heating assembly is also arranged in the middle of the bottom of the fixed frame (3); a pre-processing frame (4), a heating frame (5) and a cooling frame (6) are arranged in sequence from left to right inside the frame (1); The heating assembly comprises a closed frame 2 (15) and a heating frame 1 (16); a servo electric cylinder 4 (17) is fixedly arranged in the middle of the top of the fixed frame (3); and the closed frame 2 (15) is movably arranged in the middle of the bottom of the fixed frame (3); a driving end of the servo electric cylinder 4 (17) is fixedly connected to the top of the closed frame 2 (15); a micro electric cylinder (18) is fixedly arranged inside the closed frame 2 (15); and the heating frame 1 (16) is movably arranged at the bottom of the closed frame 2 (15); and a driving end of the micro electric cylinder (18) is fixedly connected to the top of the heating frame 1 (16); A heating frame 2 (19) is fixedly arranged at the bottom of the interior of the heating frame (5), and the bottom of the heating frame 1 (16) and the top of the heating frame 2 (19) are both composed of a plurality of heating units and temperature detectors. Servo electric cylinders 7 (35) are fixedly arranged around the inner wall of the heating frame (5), and positioning blocks (34) are fixedly arranged at the driving ends of the four servo electric cylinders 7 (35); The driving end of the servo electric cylinder 4 (17) controls the closing frame 2 (15) to move downward, and the closing frame 2 (15) is used to close the top of the heating frame (5). Then, the driving end of the micro electric cylinder (18) controls the heating frame 1 (16) to move downward until the bottom of the heating frame 1 (16) contacts the top of the wafer, and the upper and lower surfaces of the wafer are heated by the bottom of the heating frame 1 (16) and the top of the heating frame 2 (19).

2. The partitioned wafer automatic heating device according to claim 1 is characterized in that: The material transfer assembly comprises a servo linear slide (7), the front and rear sides of the bottom of the fixed frame (3) are fixedly provided with a servo linear slide (7), and the bottoms of the two servo linear slides (7) are fixedly provided with a plurality of servo electric cylinders (8), and the driving ends of the two servo electric cylinders (8) on the front and rear sides are fixedly provided with movable frames (9), and three movable frames (9) are provided below the servo linear slide (7).

3. The partitioned wafer automatic heating device according to claim 2 is characterized in that: An electric slide (32) is fixedly arranged at the bottom of the movable frame (9), and two sliding blocks (33) are slidably arranged at the bottom of the electric slide (32), and a servo electric cylinder 2 (10) is fixedly arranged on the top of the two sliding blocks (33), and an adsorption block 1 (11) is fixedly arranged at the driving ends of the two servo electric cylinders 2 (10).

4. The partitioned wafer automatic heating device according to claim 1 is characterized in that: An ultrasonic generator (20) is fixedly arranged at the bottom of the pretreatment frame (4), and a closing plate (21) is slidably arranged in the middle of the pretreatment frame (4). Servo electric cylinders (23) are fixedly arranged at the front and rear sides of the left side of the frame (1), and the driving ends of the two servo electric cylinders (23) are respectively fixedly connected to the left sides of the front and rear sides of the closing plate (21). A plurality of drainage grooves (22) are arranged on the top of the closing plate (21), and a drainage pipe (24) is also fixedly arranged on the left side of the drainage groove (22). The interior of the drainage groove (22) is connected to the interiors of a plurality of drainage grooves (22), and a liquid pump is fixedly arranged at the bottom end of the drainage groove (22).

5. The partitioned wafer automatic heating device according to claim 1, characterized in that: A closed frame 1 (12) is movably arranged on the left side of the bottom of the fixed frame (3), and two adsorption blocks 2 (14) are movably arranged inside the closed frame 1 (12) via an electric push rod. Two servo electric cylinders 3 (13) are fixedly arranged on the left side of the top of the fixed frame (3), and the driving ends of the two servo electric cylinders 3 (13) are fixedly connected to the top of the closed frame 1 (12).

6. The partitioned wafer automatic heating device according to claim 1, characterized in that: A support frame (26) is fixedly arranged at the bottom of the interior of the cooling frame (6), a plurality of air blowing ports are arranged at the top of the support frame (26), a closing plate 2 (25) is movably arranged in the middle of the interior of the cooling frame (6), and a plurality of air blowing slots (27) are arranged at the bottom of the closing plate 2 (25), and servo electric cylinders 6 (31) are fixedly arranged at the front and rear of the right side of the frame (1), and the driving ends of the two servo electric cylinders 6 (31) are respectively fixedly connected to the front and rear of the right side of the closing plate 2 (25).

7. The partitioned wafer automatic heating device according to claim 6 is characterized in that: An air inlet pipe (28) is fixedly arranged on the right side of the second closing plate (25), and the interior of the air inlet pipe (28) is communicated with the interior of a plurality of air blowing grooves (27) inside the second closing plate (25). An air pump is arranged on the right side inside the frame (1), and the air outlet end of the air pump is respectively communicated with a plurality of air blowing ports inside the support frame (26) and the bottom end of the air inlet pipe (28).

8. The partitioned wafer automatic heating device according to claim 1, characterized in that: An air guide pipe 1 (29) is fixedly arranged on the right side of the back side of the frame (1), and the two ends of the air guide pipe 1 (29) are respectively connected to the inside of the cooling frame (6) and the heating frame (5); an air guide pipe 2 (30) is fixedly arranged on the left side of the back side of the frame (1), and the two ends of the air guide pipe 2 (30) are respectively connected to the inside of the heating frame (5) and the pretreatment frame (4).

Images