Mechanical oscillator quantum device based on density phononic crystal and its preparation method

Abstract

The present application provides a mechanical oscillator quantum device based on density phononic crystal and a preparation method thereof, and relates to the technical field of quantum device preparation. A mechanical oscillator quantum device based on density phononic crystal includes: a substrate silicon wafer; a stress film layer, deposited on one side of the substrate silicon wafer, whose lower surface is in contact with the substrate silicon wafer, the stress film layer includes a suspended window, and the part of the substrate silicon wafer corresponding to the suspended window is etched and removed; a phononic crystal layer, arranged on the upper surface of the stress film layer, opposite to the suspended window, the phononic crystal layer includes a plurality of unconnected nano-columns, and no nano-columns are arranged at the center of the phononic crystal layer; a metal layer, arranged at the center of the phononic crystal layer; a lower substrate silicon wafer; a lower substrate circuit, deposited on the upper surface of the lower substrate silicon wafer; a connection module, deposited on the edge of the upper surface of the lower substrate silicon wafer, and the connection module is not connected to the lower substrate circuit, and the substrate silicon wafer is connected to the lower substrate silicon wafer through the connection module after flipping.

Description

Technical Field

[0001] The present application relates to the technical field of quantum device preparation, and in particular to a mechanical oscillator quantum device based on a density phononic crystal and a preparation method thereof. Background Art

[0002] With the development of room-temperature quantum technologies, such as suspended nanoparticles and micromechanical structures whose stiffness can be controlled by light fields, it has become possible to prepare quantum states at room temperature.

[0003] The key to achieving high-efficiency coherent resonance is to improve the Q value of the device. However, due to the limitations of the material itself and the influence of external thermal noise, it is difficult for mechanical resonators to achieve ideal performance at room temperature.

[0004] With the development of micro-nano processing technology, the preparation of silicon carbide single crystal films has matured. Compared with traditional silicon nitride materials, silicon carbide single crystal films have higher yield stress and have the potential to achieve higher Q values. Summary of the invention

[0005] According to one aspect of the present application, a mechanical oscillator quantum device based on density phononic crystal is provided, comprising: a substrate silicon wafer; a stress film layer, deposited on one side of the substrate silicon wafer, with its lower surface in contact with the substrate silicon wafer, the stress film layer comprising a suspended window, and a portion of the substrate silicon wafer corresponding to the suspended window is etched away; a phononic crystal layer, arranged on the upper surface of the stress film layer, opposite to the suspended window, the phononic crystal layer comprising a plurality of unconnected nano-columns, and no nano-columns are arranged at the exact center of the phononic crystal layer; a metal layer, deposited at the exact center of the phononic crystal layer; a lower substrate silicon wafer; a lower substrate circuit, deposited on the upper surface of the lower substrate silicon wafer, comprising a microwave capacitor, a microwave inductor and a microwave input / output module; a connecting module, deposited on the edge of the upper surface of the lower substrate silicon wafer, and the connecting module is not connected to the lower substrate circuit, and the substrate silicon wafer is connected to the lower substrate silicon wafer through the connecting module after being flipped.

[0006] According to some embodiments, the material of the stress film layer is single crystal silicon carbide.

[0007] According to some embodiments, the suspended window is located at the exact center of the stressed film layer.

[0008] According to some embodiments, the area of ​​the phononic crystal layer is equal to the area of ​​the suspended window; the multiple nanocolumns of the phononic crystal layer are arranged in a square layout, and the distance between the multiple nanocolumns is the phononic crystal period of the phononic crystal layer; the radius of the nanocolumns is half of the phononic crystal period.

[0009] According to some embodiments, the material of the metal layer includes aluminum, and the metal layer is a cylindrical structure.

[0010] According to some embodiments, the material of the lower substrate circuit includes nickel.

[0011] According to some embodiments, the material of the connection module includes indium.

[0012] According to some embodiments, after the substrate silicon wafer is flipped, the metal layer is opposite to the microwave capacitor in the lower substrate circuit, and the distance between the stress film layer and the lower substrate circuit is within a preset range.

[0013] According to one aspect of the present application, a method for preparing a mechanical oscillator quantum device based on a density phononic crystal is provided, comprising: depositing a stress film layer onto one side of a substrate silicon wafer, and making the lower surface of the stress film layer contact with the substrate silicon wafer; spin-coating an electron beam glue on the upper surface of the stress film layer to perform electron beam lithography according to a preset phononic crystal layout and retain the imaged electron beam glue; after development and fixation, etching the stress film layer based on the imaged electron beam glue to form a phononic crystal layer; depositing a metal layer at the exact center of the phononic crystal layer; window-etching a side of the substrate silicon wafer where the stress film layer is not deposited until the lower surface of the stress film layer is exposed to form a suspended window of the stress film layer, wherein the suspended window is opposite to the phononic crystal layer; depositing a lower substrate circuit and a connection module on the upper surface of the lower substrate silicon wafer, respectively, wherein the lower substrate circuit includes a microwave capacitor, a microwave inductor and a microwave input / output module; flipping the substrate silicon wafer on which the stress film layer, the phononic crystal layer and the metal layer are deposited, and connecting the substrate silicon wafer and the lower substrate silicon wafer on which the lower substrate circuit and the connection module are deposited through a connection module.

[0014] According to some embodiments, a stress film layer is deposited on one side of a substrate silicon wafer by a low pressure chemical vapor deposition process, and the stress film layer has an in-plane stress higher than a preset threshold.

[0015] According to some embodiments, after development and fixing, the stress film layer is etched based on the imaged electron beam glue to form a phononic crystal layer, including: etching the stress film layer to a preset height by reactive ion etching based on the imaged electron beam glue; cleaning and removing the imaged electron beam glue to form a plurality of unconnected nanocolumns; forming a phononic crystal layer by a plurality of unconnected nanocolumns, and no nanocolumn is arranged at the center of the phononic crystal layer.

[0016] According to some embodiments, a substrate silicon wafer and a lower substrate silicon wafer on which a lower substrate circuit and a connecting module are deposited are connected via a connecting module, including: adjusting the thickness of the connecting module to control the distance between the substrate silicon wafer and the lower substrate silicon wafer so that the distance between the stress film layer and the lower substrate circuit is within a preset range.

[0017] According to one aspect of the present application, a microwave reading device is provided, comprising the mechanical oscillator quantum device as described above.

[0018] According to the embodiments of the present application, the protection of the defect state vibration mode by the density phononic crystal reduces the interference of environmental noise on the mechanical oscillator and the intrinsic mechanical dissipation, improves the quality factor of the mechanical oscillator, and achieves a longer coherence time. The technical solution of the present application can realize the preparation of macroscopic quantum bits at room temperature, is suitable for signal processing in the microwave frequency band, and has low difficulty in micro-nano processing and high yield rate.

[0019] It should be understood that the foregoing general description and the following detailed description are exemplary only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application.

[0021] Figure 1 A schematic structural diagram of a mechanical oscillator quantum device based on a density phononic crystal according to an exemplary embodiment of the present application is shown.

[0022] Figure 2 A schematic diagram showing a process for preparing a phononic crystal layer according to an exemplary embodiment of the present application is shown.

[0023] Figure 3 A schematic structural diagram (top view) of a phononic crystal layer according to an exemplary embodiment of the present application is shown.

[0024] Figure 4 A schematic diagram showing the energy band structure of a phononic crystal layer according to an exemplary embodiment of the present application is shown.

[0025] Figure 5 A schematic diagram of a lower substrate silicon wafer preparation process for depositing a lower substrate circuit according to an exemplary embodiment of the present application is shown.

[0026] Figure 6 A schematic structural diagram of a lower substrate circuit according to an exemplary embodiment of the present application is shown.

[0027] Figure 7 A schematic structural diagram of an equivalent circuit formed by a stress film layer and a lower substrate circuit according to an exemplary embodiment of the present application is shown.

[0028] Figure numerals: 1. substrate silicon wafer; 2. stress film layer; 3. phononic crystal layer; 4. metal layer; 5. lower substrate silicon wafer; 6. lower substrate circuit; 7. connection module; 8. electron beam glue. DETAILED DESCRIPTION

[0029] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this application will be comprehensive and complete and will fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar parts, and thus their repeated description will be omitted.

[0030] The described features, structures or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application may be put into practice without one or more of these specific details, or other modes, components, materials, devices or operations may be adopted. In these cases, known structures, methods, devices, realizations, materials or operations will not be shown or described in detail.

[0031] The flowcharts shown in the accompanying drawings are only exemplary and do not necessarily include all the contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps can be decomposed, and some operations / steps can be combined or partially combined, so the actual execution order may change according to actual conditions.

[0032] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices.

[0033] The present application provides a mechanical oscillator quantum device based on density phononic crystal and a preparation method thereof, which reduces the interference of environmental noise on the mechanical oscillator and improves the quality factor of the mechanical oscillator.

[0034] A mechanical oscillator quantum device based on a density phononic crystal and a preparation method thereof according to an embodiment of the present application will be described in detail below with reference to the accompanying drawings.

[0035] Figure 1 A schematic structural diagram of a mechanical oscillator quantum device based on a density phononic crystal according to an exemplary embodiment of the present application is shown.

[0036] like Figure 1As shown, the mechanical oscillator quantum device includes a substrate silicon wafer 1, a stress film layer 2, a phononic crystal layer 3, a metal layer 4, a lower substrate silicon wafer 5, a lower substrate circuit 6 and a connection module 7.

[0037] The stress film layer 2 is deposited on one side of the substrate silicon wafer 1, and its lower surface is in contact with the substrate silicon wafer. The stress film layer 2 includes a suspended window.

[0038] According to some embodiments, the suspended window of the stress film layer 2 is located at the exact center of the stress film layer 2 , and a portion of the substrate silicon wafer 1 corresponding to the suspended window of the stress film layer 2 is etched away.

[0039] The phononic crystal layer 3 is disposed on the upper surface of the stress film layer 2, opposite to the suspended window of the stress film layer 2. The phononic crystal layer 3 includes a plurality of unconnected nano-columns formed by etching the stress film layer 2, and no nano-column is disposed at the exact center of the phononic crystal layer 3.

[0040] The metal layer 4 is deposited at the exact center of the phononic crystal layer 3 .

[0041] The lower substrate circuit 6 is deposited on the upper surface of the lower substrate silicon wafer 5 .

[0042] According to some embodiments, the lower substrate circuit 6 includes a microwave capacitor, a microwave inductor and a microwave input / output module ( Figure 1 (not shown in the figure) to form an LC oscillator.

[0043] The connection module 7 is deposited on the edge of the upper surface of the lower substrate silicon wafer 5 , and the connection module 7 is not connected to the lower substrate circuit 6 .

[0044] The substrate silicon wafer 1 on which the stress film layer 2 , the phononic crystal layer 3 and the metal layer 4 are deposited is flipped and connected to the lower substrate silicon wafer 5 on which the lower substrate circuit 6 is deposited through the connection module 7 .

[0045] like Figure 1 In the mechanical oscillator quantum device shown, the in-plane tensile stress within the suspended window portion of the stress film layer 2 can keep the film in a taut state.

[0046] The phononic crystal layer 3 generates a phonon bandgap, which can reduce the interference of environmental noise on the vibration of the diaphragm.

[0047] The metal layer 4 and the microwave capacitor in the lower substrate circuit 6 together constitute a tunable capacitor in the LC oscillator.

[0048] The lower substrate circuit 6 is used to match the input microwave signal and form a microwave circuit through the design of capacitors and inductors.

[0049] The thickness of the connection module 7 can be adjusted by controlling the pressure of the flip-chip soldering, thereby controlling the distance between the stress film layer 2 and the lower substrate circuit 6 to achieve the control of the coupling strength between the mechanical oscillator and the microwave circuit, so that the signal in the microwave circuit can be coupled with the mechanical oscillator.

[0050] The vibration of the mechanical oscillator can affect the resonant frequency of the microwave circuit, so that the vibration signal can be detected.

[0051] According to some embodiments, Figure 1 The mechanical oscillator quantum device shown is used to prepare a microwave reading device for signal processing in the microwave frequency band.

[0052] Figure 2 A schematic diagram showing a process for preparing a phononic crystal layer according to an exemplary embodiment of the present application is shown.

[0053] like Figure 2 As shown, the method for preparing the phononic crystal layer includes the following steps:

[0054] Step S100, selecting a substrate silicon wafer 1.

[0055] According to some embodiments, the selected substrate silicon wafer 1 may be a high-resistivity silicon substrate, and the thickness thereof may be 500 μm.

[0056] Step S110 , depositing a stress film layer 2 on one side of the substrate silicon wafer 1 , and the lower surface of the stress film layer 2 is in contact with the substrate silicon wafer 1 .

[0057] According to some embodiments, the material of the stress film layer 2 is single crystal silicon carbide.

[0058] According to some embodiments, the stress film layer 2 may be deposited on the substrate silicon wafer 1 by low pressure chemical vapor deposition (LPCVD) process, and its deposition thickness may be 1 μm, with an in-plane stress higher than a preset threshold value. The preset threshold value may be adjusted according to actual needs, for example, 2 GPa.

[0059] Step S120 , spin coating the electron beam glue 8 on the upper surface of the stress film layer 2 .

[0060] According to some embodiments, the thickness of the electron beam glue 8 is related to the dose of electron beam exposure, and may be generally 1 μm.

[0061] Step S130 , imaging the electron beam glue 8 by electron beam direct writing exposure to perform electron beam lithography.

[0062] According to some embodiments, electron beam lithography may be performed according to a preset phononic crystal layout, and cleaning may be performed using a debonding solution, a debonding agent, etc., so as to retain the imaged electron beam glue 8 .

[0063] Step S140 , after development and fixing, etching the stress film layer 2 based on the imaged electron beam glue 8 .

[0064] According to some embodiments, the stress film layer 2 may be etched by reactive ion etching (RIE) based on the patterned electron beam glue 8 , and the thickness of the stress film layer 2 finally retained is 50 nm.

[0065] Step 150 , removing the residual electron beam glue 8 to form a phononic crystal layer 3 .

[0066] According to some embodiments, after etching the stress film layer 2 , the residual electron beam glue 8 on the stress film layer 2 is removed, and a plurality of unconnected nano-columns are formed on the upper surface of the stress film layer 2 to form the phononic crystal layer 3 .

[0067] According to some embodiments, the thickness of the nano-pillar may be between 100 nm and 1 μm, and no nano-pillar is disposed at the exact center of the phononic crystal layer 3 , thereby constructing a defect state in the band gap of the phononic crystal.

[0068] According to some embodiments, Figure 3 As shown, the multiple nano-columns in the phononic crystal layer 3 are arranged in a square layout, and the distance between the multiple nano-columns is constant to the phononic crystal period of the phononic crystal layer 3, which can be between 200 μm and 300 μm.

[0069] According to some embodiments, Figure 3 As shown, the cross section of the nanocolumns in the phononic crystal layer 3 may be a square, and the radius thereof is half of the phononic crystal period of the phononic crystal layer 3 .

[0070] According to some embodiments, Figure 3 As shown, a metal layer 4 is deposited at the missing nano-column in the center of the phononic crystal layer 3. The metal layer 4 is made of metals such as aluminum, nickel, and niobium, and can be a cylindrical structure with a thickness between 20 nm and 120 nm.

[0071] After the phononic crystal layer 3 is prepared, its corresponding energy band structure can be generated by the preset simulation software, such as Figure 4 shown.

[0072] like Figure 4 As shown, the phononic crystal layer 3 forms a bandgap in the frequency range of 0.8 MHz to 1.2 MHz, and the frequency of the mechanical vibration formed by the central defect of the phononic crystal layer 3 in the suspended window at the center of the stress film layer 2 is about 1 MHz, thereby achieving protection of the mechanical vibration mode.

[0073] After the phononic crystal layer is prepared, the substrate silicon wafer needs to be etched to form a suspended window of the stress film layer opposite to the phononic crystal layer. The etching steps of the substrate silicon wafer are as follows:

[0074] Step S200 , window etching is performed on the side of the substrate silicon wafer 1 where the stress film layer 2 is not deposited, until the lower surface of the stress film layer 2 is exposed, so as to form a suspended window of the stress film layer 2 .

[0075] According to some embodiments, a wet etching process (e.g., KOH solution) or a dry etching process (e.g., reactive ion etching) may be used to window-remove a portion of the substrate in the middle of one side of the substrate silicon wafer 1 where the stress film layer 2 is not deposited, until the etching penetrates the entire substrate silicon wafer 1, so that the lower surface of the stress film layer 2 is exposed, and a suspended window of the stress film layer 2 is formed.

[0076] According to some embodiments, the suspended window of the stress film layer 2 is opposite to the phononic crystal layer 3 , and its thickness is the thickness of the stress film layer 2 retained by etching (ie, 50 nm).

[0077] According to some embodiments, the suspended window of the stress film layer 2 is square, and its area is equal to that of the phononic crystal layer 3 , and can be adjusted according to actual needs, for example, 1000 μm×1000 μm.

[0078] Figure 5 A schematic diagram of a lower substrate silicon wafer preparation process for depositing a lower substrate circuit according to an exemplary embodiment of the present application is shown.

[0079] like Figure 5 As shown, the method for preparing the lower substrate silicon wafer includes the following steps:

[0080] Step S300, selecting a lower substrate silicon wafer 5.

[0081] According to some embodiments, the selected lower substrate silicon wafer 5 may be a high resistivity silicon substrate, and the thickness thereof may be 500 μm.

[0082] Step S310 , depositing the lower substrate circuit 6 on the upper surface of the lower substrate silicon wafer 5 .

[0083] According to some embodiments, the material of the lower substrate circuit 6 includes metal such as nickel, and the thickness thereof may be 120 nm.

[0084] According to some embodiments, the lower substrate circuit 6 includes a microwave capacitor, a microwave inductor and a microwave input / output module, such as Figure 6 The microwave capacitor is opposite to the metal layer 4 disposed in the phononic crystal layer 3 to form a tunable capacitor, and forms an LC oscillator with the microwave inductor.

[0085] According to some embodiments, the area of ​​the cross section of the metal layer 4 is close to the area of ​​the microwave capacitor, and the area of ​​the cross section of the metal layer 4 is slightly larger than the area of ​​the central circle of the microwave capacitor.

[0086] According to some embodiments, the microwave input / output module may be connected to an external coupling to perform input / output of microwave signals.

[0087] According to some embodiments, the lower substrate circuit 6 forms a microwave circuit through microwave capacitors and microwave inductors, and the equivalent circuit formed by the lower substrate circuit 6 and the stress film layer 2 is as follows: Figure 7 As shown in the figure, Cr represents microwave capacitance and Lr represents microwave inductance.

[0088] Optionally, the method for preparing the lower substrate silicon wafer further includes:

[0089] Step S320, connect module 7 ( Figure 4 The silicon wafer 5 is deposited on the upper surface of the lower substrate (not shown).

[0090] According to some embodiments, the material of the connection module 7 includes indium, and the connection module 7 can be deposited on the edge of the upper surface of the lower substrate silicon wafer 5 by an evaporation process or a sputtering process.

[0091] According to some embodiments, a plurality of connection modules 7 may be deposited on the upper surface of the lower substrate silicon wafer 5 , wherein each connection module 7 is not connected to the lower substrate circuit 6 .

[0092] According to some embodiments, the thickness of the connection module 7 can be adjusted so as to control the distance between the stress film layer 2 and the lower substrate circuit 6 to be within a preset range.

[0093] The embodiments of the present application are described in detail above, and the description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, changes or deformations made by those skilled in the art based on the idea of ​​the present application, the specific implementation method and the scope of application of the present application, all belong to the scope of protection of the present application. In summary, the content of this specification should not be construed as limiting the present application.

Claims

1. A mechanical oscillator quantum device based on density phononic crystal, characterized in that: include: Substrate silicon wafer; A stress film layer is deposited on one side of the substrate silicon wafer, and its lower surface is in contact with the substrate silicon wafer. The stress film layer includes a suspended window, and a portion of the substrate silicon wafer corresponding to the suspended window is etched away; A phononic crystal layer is disposed on the upper surface of the stress film layer, opposite to the suspended window, wherein the phononic crystal layer includes a plurality of nano-columns that are not connected to each other, and no nano-column is disposed at the center of the phononic crystal layer; A metal layer is deposited at the center of the phononic crystal layer; Lower substrate silicon wafer; A lower substrate circuit is deposited on the upper surface of the lower substrate silicon wafer, and includes a microwave capacitor, a microwave inductor and a microwave input / output module; The connection module is deposited on the edge of the upper surface of the lower substrate silicon wafer, and the connection module is not connected to the lower substrate circuit. After the substrate silicon wafer is flipped, it is connected to the lower substrate silicon wafer through the connection module.

2. The mechanical oscillator quantum device according to claim 1, characterized in that: The material of the stress film layer is single crystal silicon carbide.

3. The mechanical oscillator quantum device according to claim 1, characterized in that: The suspended window is located at the center of the stress film layer.

4. The mechanical oscillator quantum device according to claim 1, characterized in that: The area of ​​the phononic crystal layer is equal to the area of ​​the suspended window; The plurality of nano-columns of the phononic crystal layer are arranged in a square layout, and the distance between the plurality of nano-columns is the phononic crystal period of the phononic crystal layer; The radius of the nanocolumn is half of the period of the phononic crystal.

5. The mechanical oscillator quantum device according to claim 1, characterized in that: The material of the metal layer includes aluminum, and the metal layer is a cylindrical structure.

6. The mechanical oscillator quantum device according to claim 1, characterized in that: The material of the lower substrate circuit includes nickel.

7. The mechanical oscillator quantum device according to claim 1, characterized in that: The material of the connection module includes indium.

8. The mechanical oscillator quantum device according to claim 1, characterized in that: After the substrate silicon wafer is flipped, the metal layer is opposite to the microwave capacitor in the lower substrate circuit, and the distance between the stress film layer and the lower substrate circuit is within a preset range.

9. A method for preparing a mechanical oscillator quantum device based on a density phononic crystal, characterized in that: include: Depositing a stress film layer on one side of a substrate silicon wafer, and making the lower surface of the stress film layer contact with the substrate silicon wafer; Spin-coating electron beam glue on the upper surface of the stress film layer to perform electron beam lithography according to a preset phononic crystal layout and retain the imaged electron beam glue; After developing and fixing, etching the stress film layer based on the imaged electron beam glue to form a phononic crystal layer; Depositing a metal layer at the exact center of the phononic crystal layer; Window etching is performed on the side of the substrate silicon wafer where the stress film layer is not deposited, until the lower surface of the stress film layer is exposed, so as to form a suspended window of the stress film layer, wherein the suspended window is opposite to the phononic crystal layer; Depositing a lower substrate circuit and a connection module on the upper surface of the lower substrate silicon wafer respectively, wherein the lower substrate circuit includes a microwave capacitor, a microwave inductor and a microwave input / output module; The substrate silicon wafer on which the stress film layer, the phononic crystal layer and the metal layer are deposited is flipped upside down, and the substrate silicon wafer and the lower substrate silicon wafer on which the lower substrate circuit and the connection module are deposited are connected through the connection module.

10. The preparation method according to claim 9, characterized in that: The stress film layer is deposited on one side of the substrate silicon wafer through a low-pressure chemical vapor deposition process, and the stress film layer has an in-plane stress higher than a preset threshold.

11. The preparation method according to claim 9, characterized in that: After developing and fixing, etching the stress film layer based on the imaged electron beam glue to form a phononic crystal layer, including: Based on the patterned electron beam glue, etching the stress film layer to a preset height by reactive ion etching; Cleaning and removing the patterned electron beam glue to form a plurality of nano-columns that are not connected to each other; The phononic crystal layer is formed by the plurality of unconnected nanocolumns, and the nanocolumns are not arranged at the center of the phononic crystal layer.

12. The preparation method according to claim 9, characterized in that: Connecting the substrate silicon wafer and the lower substrate silicon wafer on which the lower substrate circuit and the connecting module are deposited through the connecting module comprises: The thickness of the connection module is adjusted to control the distance between the substrate silicon wafer and the lower substrate silicon wafer, so that the distance between the stress film layer and the lower substrate circuit is within a preset range.

13. A microwave reading device, characterized in that: Comprising a mechanical oscillator quantum device as described in any one of claims 1-8.

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