Split wafer support mechanism, process chamber, processing method, and storage medium

Abstract

A split wafer support mechanism, a process chamber, a processing method and a storage medium are provided. The split wafer support mechanism includes a plurality of first ring bodies, a plurality of second ring bodies and a first lifting mechanism. The plurality of first ring bodies are arranged inside the process chamber through a plurality of first supporting rods for supporting a plurality of first positions of the wafer edge. The plurality of first supporting rods are located at the periphery of a showerhead below the wafer. The plurality of second ring bodies are arranged inside the process chamber through a plurality of second supporting rods for supporting a plurality of second positions of the wafer edge. The plurality of second supporting rods are located at the periphery of the showerhead below the wafer. The first lifting mechanism connects the plurality of first ring bodies through the plurality of first supporting rods, for lifting the plurality of first ring bodies to a preset wafer transfer position before backside deposition process of the wafer, to receive the wafer transferred into the process chamber, and for lifting the plurality of first ring bodies to a process position together with the plurality of second ring bodies to support the edge of the wafer during the backside deposition process of the wafer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of thin film deposition, and in particular to a split wafer support mechanism, a process chamber, a semiconductor device processing method, and a computer readable storage medium. BACKGROUND

[0002] In the existing semiconductor processing equipment for backside deposition process, a heating disc is used above the process chamber to heat the wafer to be processed, and a showerhead is used below the process chamber to spray process gas to the wafer. However, in the existing process chamber, a lifting pin is arranged in the center of the shower disc below to perform the wafer transfer step. This arrangement causes the shower holes on the surface of the showerhead to be distributed unevenly, resulting in uneven distribution of process gas on the back of the wafer, which in turn affects the uniformity of the film deposition thickness on the back of the wafer.

[0003] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the art for an improved split wafer support mechanism for making the distribution of the shower holes on the showerhead more uniform, thereby improving the uniformity of the film deposition thickness. SUMMARY

[0004] The following gives a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an extensive overview of all contemplated aspects, and is not intended to identify key or critical elements of all aspects or to delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0005] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a split wafer support mechanism, a process chamber, a semiconductor device processing method, and a computer readable storage medium, which can support the wafer lifting to perform the wafer transfer by setting the liftable split wafer support structure, so as to make the distribution of the shower holes on the showerhead more uniform, thereby improving the uniformity of the film deposition thickness.

[0006] Specifically, the split wafer support mechanism according to the first aspect of the present application comprises a plurality of first rings, a plurality of second rings, and a first lifting mechanism. The plurality of first rings are disposed inside a process chamber via a plurality of first support rods for supporting a plurality of first positions of the edge of a wafer to be processed and exposing the back surface of the wafer. The plurality of first support rods are located at the periphery of a showerhead below the wafer. The plurality of second rings are disposed inside the process chamber via a plurality of second support rods for supporting a plurality of second positions of the edge of the wafer and exposing the back surface of the wafer. The plurality of second support rods are located at the periphery of the showerhead below the wafer. The first lifting mechanism connects the plurality of first rings via the plurality of first support rods for lifting the plurality of first rings to a preset wafer transfer position to receive a wafer transferred into the process chamber before a backside deposition process is performed on the wafer, and for lifting the plurality of first rings to a process position to support the edge of the wafer together with the plurality of second rings when the backside deposition process is performed on the wafer.

[0007] Further, in some embodiments of the present application, a plurality of first gas channels are respectively provided on the plurality of second rings. A gas inlet is respectively provided on the bottom of the plurality of second support rods. Inert gas is introduced from the gas inlet into the plurality of first gas channels and into a front surface area above the wafer via the plurality of first gas channels to protect the front surface of the wafer.

[0008] Further, in some embodiments of the present application, an exhaust ring is further provided on the periphery of the wafer support mechanism. The exhaust height of the exhaust ring is higher than the process position. A plurality of second gas channels are provided on the plurality of first rings. The inert gas enters the back surface area below the wafer from the front surface area above the wafer via the plurality of second gas channels and is exhausted out of the process chamber via the exhaust ring.

[0009] Further, in some embodiments of the present application, a plurality of first gas channels are respectively provided on the plurality of second rings. A first spacing is maintained between each two adjacent first gas channels. A plurality of second gas channels are respectively provided on the plurality of first rings. A second spacing is maintained between each two adjacent second gas channels. The first spacing and / or the second spacing are determined according to the concentration of inert gas in the front surface area of the wafer.

[0010] Further, in some embodiments of the present application, the wafer support mechanism further comprises a second lifting mechanism. The second lifting mechanism connects the plurality of second rings via the plurality of second support rods for controlling the lifting of the plurality of second rings to adjust a first distance between the showerhead and the back surface of the wafer during the backside deposition process on the wafer, so as to adjust the process window of the thin film deposition process.

[0011] Further, in some embodiments of the present application, the wafer support mechanism further comprises a distance sensor and a heating plate lifting mechanism. The distance sensor is connected to the plurality of first rings for measuring a second distance between the heating plate and the back surface of the wafer. The heating plate lifting mechanism is connected to the top of the heating plate above the wafer for controlling the lifting of the heating plate according to the second distance.

[0012] Further, in some embodiments of the present application, the process chamber further comprises a heating plate, a split wafer support mechanism as provided by the first aspect of the present application, and a showerhead. The heating plate is located at the top of the process chamber for heating the wafer during a backside deposition process of the wafer. The split wafer support mechanism is for supporting a plurality of positions of the wafer edge and exposing the back surface of the wafer. The showerhead is located below the wafer support mechanism for spraying process gas to the back surface of the wafer.

[0013] Further, in some embodiments of the present application, the process chamber further comprises a power input module and / or a heating plate lifting mechanism and / or a heating wire. The power input module is connected to the top of the heating plate for inputting power to the heating plate to control the heating of the heating plate to a preset process temperature. The heating plate lifting mechanism is connected to the top of the heating plate. The wafer support mechanism comprises a temperature sensor. The temperature sensor is for measuring the back surface temperature of the wafer. The heating plate lifting mechanism is for controlling the lifting of the heating plate according to the back surface temperature. The heating wire is disposed at the bottom of the process chamber for increasing the temperature inside the process chamber to a preset process temperature.

[0014] Further, in some embodiments of the present application, the process chamber further comprises a process gas source and a cleaning gas source. The process gas source is connected to a process gas inlet of the process chamber for spraying process gas to the back surface of the wafer via the showerhead during a backside deposition process of the wafer. The cleaning gas source is connected to a cleaning gas inlet of the process chamber for spraying cleaning gas into the process chamber via the showerhead after the completion of the backside deposition process.

[0015] Further, in some embodiments of the present application, the process chamber further comprises an exhaust ring with an exhaust height higher than a process position of the backside deposition process. The plurality of first rings of the wafer support mechanism are provided with a plurality of second gas channels. Inert gas enters from the front surface area above the wafer to the back surface area below the wafer via the plurality of second gas channels and is exhausted out of the process chamber via the exhaust ring.

[0016] Further, the processing method of the semiconductor device as described above according to the third aspect of the present application comprises the following steps: lifting a plurality of first rings in the split wafer support mechanism of the process chamber as provided by the second aspect of the present application to a preset wafer transfer position to receive a wafer transferred into the process chamber; lifting the plurality of first rings to the height of a plurality of second rings to support the edge of the wafer together with the plurality of second rings; performing backside deposition on the wafer; and in response to completion of the backside deposition process, lifting the plurality of first rings to the wafer transfer position to take out the processed wafer from the process chamber.

[0017] Further, in some embodiments of the present application, the processing method further comprises the following step: in response to completion of the backside deposition process, spraying a cleaning gas into the process chamber via a cleaning gas source of the process chamber.

[0018] Further, in some embodiments of the present application, the processing method further comprises the following step: during the backside deposition process on the wafer, controlling the lifting of the plurality of second rings to adjust a first distance between the showerhead and the backside of the wafer to adjust a process window of the thin film deposition process.

[0019] Further, the computer readable storage medium as described above according to the fourth aspect of the present application has computer instructions stored thereon. The computer instructions are executed by a processor to implement the processing method of the semiconductor device as provided by the third aspect of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0020] The above features and advantages of the present application will be better understood through reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which: the components are not necessarily drawn to scale, and components of similar or identical function or features can have the same or similar reference label.

[0021] Figure 1 A front view cross-sectional view of a process chamber with a wafer support mechanism lifted to a wafer transfer position is shown according to some embodiments of the present application.

[0022] Figure 2 A front view cross-sectional view of a process chamber with a wafer support mechanism lifted to a process position is shown according to some embodiments of the present application.

[0023] Figure 3 A right view cross-sectional view of a process chamber is shown according to some embodiments of the present application.

[0024] Figure 4A A structural schematic view of a first gas passage is shown according to some embodiments of the present application.

[0025] Figure 4BA schematic diagram of the structure of a second gas channel provided according to some embodiments of the present invention is shown.

[0026] Figure 5 A top cross-sectional view of a wafer support mechanism provided according to some embodiments of the present invention is shown.

[0027] Figure 6 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown. Detailed Implementation

[0028] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0029] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0030] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0031] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0032] As described above, in existing semiconductor device processing equipment for back-side deposition processes, a heating plate is used above the process chamber to heat the wafer to be processed, and a spray head is used below to spray process gases onto the wafer. However, in existing process chambers, a lifting pin is set in the center of the spray plate below for wafer transfer. This setup results in uneven distribution of spray holes on the surface of the spray head, leading to uneven distribution of process gases on the back side of the wafer, and consequently, uneven film deposition thickness.

[0033] To overcome the aforementioned deficiencies in the prior art, the present invention provides a split wafer support structure, a process chamber, a semiconductor device processing method, and a computer-readable storage medium. By setting a liftable split wafer support structure, the wafer can be lifted and transferred, thereby making the spray holes on the spray head more uniformly distributed and improving the uniformity of the thin film deposition thickness.

[0034] In some non-limiting embodiments, the semiconductor device processing method provided in the third aspect can be implemented by the process chamber provided in the second aspect.

[0035] Please refer to the reference for details. Figures 1-3 . Figure 1 A front cross-sectional view of a process chamber in which a wafer support mechanism is raised to the wafer transfer position according to some embodiments of the present invention is shown. Figure 2 A front cross-sectional view of a process chamber, provided by some embodiments of the present invention, is shown, in which a wafer support mechanism is raised and lowered to a process position. Figure 3 A right-side cross-sectional view of a process chamber provided according to some embodiments of the present invention is shown.

[0036] exist Figures 1-3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention includes a heating plate 11, a split wafer support mechanism provided by the first aspect of the present invention, and a spray head 12. Here, the heating plate 11 is located at the top of the process chamber and is used to heat the wafer during the back-side deposition process. The split wafer support mechanism is used to support multiple locations at the wafer edge and expose the back side of the wafer. The spray head 12 is located below the wafer support mechanism to spray process gases onto the back side of the wafer.

[0037] In addition, Figures 1-3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention further includes a power input module 111 and a heating wire 13. Here, the power input module 111 is connected to the top of the heating plate 11 and is used to input power to the heating plate 11 to control the heating plate 11 to heat up to a preset process temperature. The heating wire 13 is disposed at the bottom of the process chamber and is used to raise the temperature inside the process chamber to the preset process temperature.

[0038] In addition, in the embodiment shown, the process chamber provided by the second aspect of the present application further comprises a process gas source and a cleaning gas source. In this embodiment, the process gas source comprises a process gas inlet 15 for spraying process gas to the back surface of the wafer via the showerhead 12 during the backside deposition process. The cleaning gas source comprises a cleaning gas inlet 16 for spraying cleaning gas into the process chamber via the showerhead 12 after the backside deposition process. Figures 1-3

[0039] In addition, in the embodiment shown, the process chamber provided by the second aspect of the present application further comprises an exhaust ring 17, the height of which is higher than the process position of the backside deposition process. In this embodiment, the wafer support mechanism comprises a plurality of first ring bodies 142, and a plurality of second gas channels are provided on the first ring bodies 142. Inert gas enters the side surface of the wafer from the front surface of the wafer above via the second gas channels, and is exhausted out of the process chamber via the exhaust ring 17. Figures 1-3 Those skilled in the art can understand that the above-mentioned embodiment of setting the exhaust height of the exhaust ring to be higher than the process position is only some non-limiting embodiments provided by the present application, which aims to clearly demonstrate the main concept of the present application and provide some specific solutions for the public to implement, but not to limit the protection scope of the present application. Alternatively, in other embodiments, the exhaust position of the exhaust ring can be located at the side of the process position of the backside deposition process, and the exhaust height thereof can be lower than or equal to the height of the process position.

[0040]

[0041] In addition, in the embodiment shown, the process chamber provided by the second aspect of the present application further comprises a gas distribution plate 18 for uniformly distributing the process gas or cleaning gas output by the process gas source or the cleaning gas source. Figures 1-3

[0042] In addition, in the embodiment shown, the process chamber provided by the second aspect of the present application further comprises an adapter block 191 and a bellows 192. In this embodiment, the bellows 192 is connected between the adapter block 191 and the top of the process chamber, and can effectively seal the stretching and compression displacement stroke when the heating disc 11 is displaced up and down. Figures 1-3

[0043] In addition, in some non-limiting embodiments, the process chamber provided by the second aspect described above can further be configured with a memory and a controller. The memory includes but is not limited to the computer readable storage medium provided by the fourth aspect described above, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the processing method of the semiconductor device provided by the third aspect described above.

[0044] ​​​​Furthermore, in Figure 4A In the illustrated embodiment, the split wafer support mechanism provided by the first aspect of the present invention includes a plurality of first rings 142, a plurality of second rings 143, and a first lifting mechanism 144. The plurality of first rings 142 are disposed inside the process chamber via a plurality of first support rods 1421, for supporting a plurality of first positions on the edge of the wafer to be processed and exposing the back side of the wafer. Here, the plurality of first support rods 1421 are located around the spray head 12 below the wafer.

[0045] Specifically, multiple first support rods 1421 are sealed and extend from the inside of the process chamber to the outside of the process chamber. The first support rod 1421 is connected to the first ring body 142 above one end inside the process chamber and to the first lifting mechanism 144 below one end outside the process chamber.

[0046] Similarly, the plurality of second ring bodies 143 are disposed inside the process chamber via a plurality of second support rods 1431 to support a plurality of second positions on the wafer edge and expose the back side of the wafer, wherein the plurality of second support rods 1431 are located around the spray head 12 below the wafer. The first lifting mechanism 144 is connected to a plurality of first ring bodies 142 via a plurality of first support rods 1421 to lift the plurality of first ring bodies 142 to a preset wafer transfer position before the back side deposition process is performed on the wafer to receive the wafer entering the process chamber, and to lift the plurality of first ring bodies 142 to the process position during the back side deposition process to support the edge of the wafer together with the plurality of second ring bodies 143.

[0047] Here, the inner ring diameters of the first ring body 142 and the second ring body 143 are smaller than the diameter of the spray head 12, so that the entire wafer surface is completely within the diameter range of the spray head 12.

[0048] Please refer to further details. Figure 4B , Figure 5 and Figure 4A . Figure 4B A schematic diagram of the structure of a first gas channel provided according to some embodiments of the present invention is shown. Figure 5 A schematic diagram of the structure of a second gas channel provided according to some embodiments of the present invention is shown. Figure 4A A top cross-sectional view of a wafer support mechanism provided according to some embodiments of the present invention is shown.

[0049] like Figure 2 As shown, multiple second ring bodies 143 are provided with multiple first gas channels 1432, and multiple second support rods 1431 are provided with gas inlets 1433 at their bottoms. Here, inert gas is introduced into the multiple first gas channels 1432 through the gas inlets 1433, and then introduced into the front area above the wafer through the multiple first gas channels 1432 to protect the front side of the wafer.

[0050] like Figure 4B As shown, the wafer support mechanism is also surrounded by a suction ring 17, the suction height of which is higher than the process position. Figure 5 As shown, multiple first ring bodies 142 are provided with multiple second gas channels 1422. Inert gas enters the back area below the wafer from the front area above the wafer through the multiple second gas channels 1422 and is discharged from the process chamber through the extraction ring 17.

[0051] Thus, the split wafer support mechanism provided in the first aspect of the present invention can directly introduce inert gas into the front area above the wafer through the gas inlet 1433 and multiple first gas channels 1432 to protect the front side of the wafer and prevent damage to it. Subsequently, excess inert gas can be allowed to enter the back area below the wafer from the front area above the wafer through the second gas channel 1422 and be discharged from the process chamber via the suction ring 17. Therefore, sufficient inert gas can be effectively ensured in the front area above the wafer to protect it, avoiding the problem of excessively fast inert gas extraction speed due to directly placing the suction ring 17 in the front area above the wafer, which would fail to protect the wafer.

[0052] Furthermore, in Figure 3 In the illustrated embodiment, each of the plurality of second ring bodies 143 preferably has a plurality of first gas channels 1432, with a first spacing maintained between every two adjacent first gas channels 1432. Similarly, each of the plurality of first ring bodies 142 preferably has a plurality of second gas channels 1422, with a second spacing maintained between every two adjacent second gas channels 1422. Here, the first spacing and / or the second spacing is determined based on the concentration of inert gas in the front-side region of the wafer. For example, if a higher concentration of inert gas is required in the front-side region of the wafer, the first spacing of the first gas channels 1432 can be reduced while the second spacing of the second gas channels 1422 can be increased to increase the rate of inert gas introduction and decrease the rate of inert gas extraction. Conversely, if a lower concentration of inert gas is required in the front-side region of the wafer, the first spacing of the first gas channels 1432 can be increased while the second spacing of the second gas channels 1422 can be decreased to decrease the rate of inert gas introduction and increase the rate of inert gas extraction.

[0053] In addition, Figure 1In the illustrated embodiment, the wafer support mechanism provided by the first aspect of the present invention preferably includes a second lifting mechanism 145, which is connected to a plurality of second rings 143 via a plurality of second support rods 1431. During the back-side deposition process of the wafer, the mechanism controls the lifting of the plurality of second rings 143 to adjust the first distance between the spray head and the back side of the wafer, thereby adjusting the process window of the thin film deposition process.

[0054] In addition, Figure 2 and Figure 6 In the illustrated embodiment, the wafer support mechanism provided by the first aspect of the present invention preferably further includes a distance sensor 141 and a heating plate lifting mechanism 112. Here, the distance sensor 141 is connected to a plurality of first rings 142 for measuring a second distance between the heating plate 11 and the back surface of the wafer. The heating plate lifting mechanism 112 is connected to the top of the heating plate 11 for controlling the lifting and lowering of the heating plate 11 according to the second distance. Here, the distance sensor can be any one of a laser sensor, a force sensor, or an acoustic sensor.

[0055] The working principle of the above-mentioned process chamber will be described below with reference to some embodiments of semiconductor device fabrication methods. Those skilled in the art will understand that these embodiments of fabrication methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating modes of the process chamber. Similarly, the process chamber is also only one non-limiting implementation provided by the present invention and does not limit the executing entity or execution order of the steps in these semiconductor device fabrication methods.

[0056] Please refer to the details. Figure 6 . Figure 6 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0057] like ​ As shown, the controller in the process chamber provided by the second aspect of the present invention can first raise and lower a plurality of first rings 142 in the split wafer support mechanism to a preset wafer transfer position to receive the wafers entering the process chamber. Then, the controller can raise and lower the plurality of first rings 142 to the height of a plurality of second rings 143 to support the edge of the wafer together with the plurality of second rings 143.

[0058] Next, the controller can perform back-side deposition on the wafer. Specifically, during the back-side deposition process, the controller can obtain a second distance between the heating plate 11 and the wafer, and based on the second distance, raise and lower the heating plate 11 at least once via the heating plate lifting mechanism 112 to adjust the distance between the heating plate 11 and the back side of the wafer.

[0059] In addition, in some preferred embodiments, the controller can also control the lifting and lowering of multiple second rings 143 during the back-side deposition process of the wafer to adjust the first distance between the spray head 12 and the back side of the wafer, thereby adjusting the process window of the thin film deposition process.

[0060] Subsequently, in response to the completion of the backside deposition process, the controller can raise and lower multiple first ring bodies 142 to the wafer replacement position to remove the processed wafer from the process chamber.

[0061] In addition, in some preferred embodiments, in response to the completion of the backside deposition process, the controller can also spray cleaning gas into the process chamber via the cleaning gas inlet 16 of the cleaning gas source of the process chamber to clean the process chamber.

[0062] In summary, the present invention provides a split wafer support structure, a process chamber, a semiconductor device processing method, and a computer-readable storage medium. All of these can control the wafer lifting and transfer by setting a liftable split wafer support structure, so as to make the spray holes on the spray head more uniformly distributed, thereby improving the uniformity of the thin film deposition thickness.

[0063] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0064] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A split-type wafer support mechanism, characterized in that, include: Multiple first ring bodies are disposed inside the process chamber via multiple first support rods to support multiple first positions on the edge of the wafer to be processed and to expose the back side of the wafer, wherein the multiple first support rods are located around the spray head below the wafer; Multiple second rings, disposed within the process chamber via multiple second supports, support multiple second locations at the wafer edge and expose the back side of the wafer, wherein the multiple second supports are located around a spray head beneath the wafer; and The first lifting mechanism is connected to the plurality of first ring bodies via the plurality of first support rods. It is used to lift the plurality of first ring bodies to a preset wafer transfer position before performing the back-side deposition process on the wafer, so as to receive the wafer entering the process chamber. During the back-side deposition process on the wafer, it lifts the plurality of first ring bodies to the process position, so as to support the edge of the wafer together with the plurality of second ring bodies.

2. The wafer support mechanism as described in claim 1, characterized in that, Each of the plurality of second ring bodies is provided with a plurality of first gas channels, and each of the plurality of second support rods is provided with a gas inlet at its bottom. Inert gas is introduced into the plurality of first gas channels through the gas inlets and then into the front area above the wafer through the plurality of first gas channels to protect the front side of the wafer.

3. The wafer support mechanism as described in claim 2, characterized in that, The wafer support mechanism is further surrounded by a suction ring, the suction height of which is higher than the process position. The plurality of first ring bodies are provided with a plurality of second gas channels, through which the inert gas enters from the front area above the wafer into the back area below the wafer, and is discharged from the process chamber via the suction ring.

4. The wafer support mechanism as described in claim 3, characterized in that, Each of the plurality of second annular bodies is provided with a plurality of the first gas channels, and a first distance is maintained between every two adjacent first gas channels. The plurality of first annular bodies are respectively provided with a plurality of second gas channels, wherein a second spacing is maintained between every two adjacent second gas channels, and the first spacing and / or the second spacing is determined according to the concentration of inert gas in the front area of ​​the wafer.

5. The wafer support mechanism as described in claim 1, characterized in that, Also includes: The second lifting mechanism is connected to the multiple second rings via the multiple second support rods. It is used to control the lifting of the multiple second rings during the back-side deposition process of the wafer to adjust the first distance between the spray head and the back side of the wafer, thereby adjusting the process window of the thin film deposition process.

6. The wafer support mechanism as described in claim 1, characterized in that, Also includes: A distance sensor, connected to multiple first ring bodies, is used to measure a second distance between the heating plate and the back surface of the wafer; as well as A heating plate lifting mechanism is connected to the top of the heating plate above the wafer and is used to control the lifting of the heating plate according to the second distance.

7. A process chamber, characterized in that, include: A heating plate, located at the top of the process chamber, is used to heat the wafer during the back-side deposition process. The split wafer support mechanism as described in any one of claims 1 to 6 is used to support multiple locations on the edge of the wafer and expose the back side of the wafer; as well as A spray nozzle, located below the wafer support mechanism, sprays process gases onto the back side of the wafer.

8. The process chamber as described in claim 7, characterized in that, Also includes: A power input module, connected to the top of the heating plate, is used to input power to the heating plate to control the heating plate to heat up to a preset process temperature; and / or A heating wire is located at the bottom of the process chamber and is used to raise the temperature inside the process chamber to the process temperature.

9. The process chamber as described in claim 7, characterized in that, Also includes: A process gas source, wherein the process gas source is connected to the process gas inlet of the process chamber, and is used to spray process gas onto the back side of the wafer via the spray head during the back-side deposition process of the wafer; and A cleaning gas source, wherein the cleaning gas source is connected to the cleaning gas inlet of the process chamber, and is used to spray cleaning gas into the process chamber via the spray head after the back deposition process is completed.

10. The process chamber as described in claim 7, characterized in that, Also includes: The suction ring has a suction height higher than the process position of the back deposition process. The wafer support mechanism has multiple first ring bodies with multiple second gas channels. Inert gas enters the back area below the wafer from the front area above the wafer through the multiple second gas channels and is discharged from the process chamber through the suction ring.

11. A method for fabricating a semiconductor device, characterized in that, Includes the following steps: The plurality of first ring bodies in the split wafer support mechanism of the process chamber as described in any one of claims 8 to 10 are raised and lowered to a preset wafer transfer position to receive the wafers entering the process chamber. The plurality of first ring bodies are raised or lowered to the height of the plurality of second ring bodies, so as to support the edge of the wafer together with the plurality of second ring bodies; Backside deposition is performed on the wafer; as well as In response to the completion of the backside deposition process, the plurality of first ring bodies are raised and lowered to the wafer replacement position to remove the processed wafer from the process chamber.

12. The processing method as described in claim 11, characterized in that, It also includes the following steps: In response to the completion of the backside deposition process, a cleaning gas is sprayed into the process chamber via a cleaning gas source.

13. The processing method as described in claim 11, characterized in that, It also includes the following steps: During the backside deposition process on the wafer, the lifting and lowering of the plurality of second ring bodies are controlled to adjust the first distance between the spray head and the backside of the wafer, thereby adjusting the process window of the thin film deposition process.

14. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the method for processing the semiconductor device as described in any one of claims 11 to 13 is implemented.

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