Wafer processing apparatus using plasma phase shift
By independently shifting the plasma phase of each reaction chamber in the wafer processing device, the central plasma problem caused by plasma wave interaction in traditional equipment is solved, and the stability of the plasma and wafer processing quality are improved.
Patent Information
- Application Number
- CN202410661097.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-05-30
- Filing Date
- 2024-05-27
- Publication Date
- 2024-12-10
AI Technical Summary
The same platform and bottom chamber are shared between reaction chambers in traditional wafer processing equipment, resulting in interactions between plasma waves, low plasma windows, unstable plasma, low repeatability and reaction chamber mismatch, forming Central plasma affects wafer quality.
By generating plasmas with specific frequencies and phases in the plasma generator and independently offsetting the plasma phase of each reaction chamber using a control circuit, ensuring that the plasma phases received by each reaction chamber are 90 degrees different, to Eliminate constructive interference and avoid the formation of central plasma.
Effectively eliminates central plasma, improves the stability and repeatability of plasma, and improves the quality and efficiency of wafer processing.
Smart Images
Figure CN119108256A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a wafer processing apparatus, and more particularly to an apparatus for processing wafers using plasma, the apparatus having a plurality of reaction chambers in a platform. Background Art
[0002] Some conventional wafer processing equipments share the same platform and bottom chamber between reaction chambers. For example, an exemplary platform may include 4 reaction chambers.
[0003] The plasma supplied to the reaction chamber has a specific frequency and a specific phase. And therefore, each reaction chamber affects other reaction chambers when operating. More specifically, due to the interaction between the plasma waves of the reaction chambers, low plasma window, unstable plasma, low repeatability, mismatch between reaction chambers (RC), and central plasma may occur.
[0004] 2(a) and 2(b) illustrate some aspects of the problems with conventional devices having four chambers in one platform.
[0005] FIG. 2( a ) shows the setup of the reaction chamber in cross-section.
[0006] Normal plasma 201 may be formed between an upper electrode 205 and a wafer support 206 of the reaction chamber 200. However, directly below the wafer support 206, bottom plasma 202 may be formed, and axial plasma 203 may also be formed therebelow.
[0007] In addition, a central plasma 204 may be generated at the center of the platform (device) 215 in FIG. 2( b ).
[0008] The central plasma 204, 215 is formed due to constructive interference from reaction chambers RC1 211, RC2 212, RC3 213, RC4 214 around the center 215, and the constructive interference can be seen in waveform "A" of graph 260. Constructive interference is formed at the midpoint 215 of reaction chambers RC1 to RC4 211, 212, 213, 214.
[0009] The original wave "B" is depicted in Figure 2(b), and each RC is fed with the same wave "B" (220, 230, 240, 250). The resulting wave, the central plasma "A", may have a much larger amplitude than the original wave "B".
[0010] This central plasma is caused by waves fed into the surrounding RC, which affects the plasma quality and ultimately the quality of the processed wafer.
[0011] Therefore, the present disclosure proposes an apparatus for minimizing central plasma. Summary of the invention
[0012] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.
[0013] According to one embodiment, a wafer processing system using plasma may be provided, the system comprising: a first reaction chamber, a second reaction chamber, a third reaction chamber, and a fourth reaction chamber disposed on a platform, each of which is configured to process a wafer; a plasma generator configured to generate plasma having a specific frequency and a specific phase, and further configured to provide the generated plasma to the first reaction chamber, the second reaction chamber, the third reaction chamber, and the fourth reaction chamber; and a control circuit connected to the plasma generator and configured to adjust the phase of the plasma generated by the plasma generator; wherein the control circuit is further configured to independently shift the phase of the generated plasma provided to the first reaction chamber, the second reaction chamber, the third reaction chamber, and the fourth reaction chamber.
[0014] In at least one aspect, the phase of the plasma provided to the second reaction chamber is 90 degrees ahead of the phase of the plasma provided to the first reaction chamber, the phase of the plasma provided to the third reaction chamber is 90 degrees ahead of the phase of the plasma provided to the second reaction chamber, and the phase of the plasma provided to the fourth reaction chamber is 90 degrees ahead of the phase of the plasma provided to the third reaction chamber.
[0015] In at least one aspect, the phase of the plasma provided to the second reaction chamber lags behind the phase of the plasma provided to the first reaction chamber by 90 degrees, the phase of the plasma provided to the third reaction chamber lags behind the phase of the plasma provided to the second reaction chamber by 90 degrees, and the phase of the plasma provided to the fourth reaction chamber lags behind the phase of the plasma provided to the third reaction chamber by 90 degrees.
[0016] According to another embodiment, a wafer processing system using plasma may be provided, the system comprising: a plurality of reaction chambers disposed on a platform, each reaction chamber configured to process a wafer; plasma generators respectively coupled to the plurality of reaction chambers and configured to generate plasma having a specific frequency and a specific phase, and further configured to provide the generated plasma to the plurality of reaction chambers; and a control circuit connected to the plasma generator and configured to adjust the phase of the plasma generated by the plasma generator; wherein the control circuit is further configured to independently shift the phases of the generated plasma provided to the plurality of reaction chambers.
[0017] In at least one aspect, the control circuit is further configured to shift the generated plasma by (360 / n) degrees for each of the plurality of reaction chambers, where n is the number of reaction chambers.
[0018] In at least one aspect, the control circuit is further configured to vary in real time the phase of the generated plasma provided to the plurality of reaction chambers. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure.
[0020] Figure 1 An overview of a device according to an embodiment of the present disclosure is shown.
[0021] FIG. 2( a ) shows a cross-sectional view of a prior art reaction chamber and the location where plasma occurs in the reaction chamber.
[0022] FIG. 2( b ) shows how the original wave “B” is fed into four reaction chambers to produce the final central plasma wave “A” in a prior art system.
[0023] FIG. 3( a ) shows how the plasma power is reflected in four reaction chambers in a conventional setup.
[0024] FIG. 3( b ) illustrates the resulting plasma power according to an embodiment of the present invention and the advantages of the apparatus of the present invention. DETAILED DESCRIPTION
[0025] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.
[0026] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include wafers of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.
[0027] For example, a substrate in powder form can be used in drug manufacturing. The porous substrate can include a polymer. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.
[0028] The continuous substrate may extend beyond the boundaries of the processing chamber in which the deposition process occurs. In some processes, the continuous substrate may be moved through the process chamber so that the process continues until the end of the substrate is reached. The continuous substrate may be provided from a continuous substrate supply system to allow the continuous substrate to be manufactured and output in any suitable form.
[0029] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (eg, ceramic fibers or polymer fibers). A continuous substrate may also include a carrier or sheet on which a discontinuous substrate is mounted.
[0030] The illustrations presented herein are not meant to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.
[0031] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and implementations in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.
[0032] It should be understood that the configuration and / or method described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown can be performed in the order shown, in other orders, or omitted in some cases.
[0033] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.
[0034] Figure 1 An overview of the device of the present disclosure is shown.
[0035] The platform 100 may include four reaction chambers (RCs) RC1 101, RC2 102, RC3 103, and RC4 104. The four reaction chambers 101, 102, 103, and 104 may process wafers using plasma.
[0036] Plasma used in the RC may be generated in the plasma generator 110. The generated plasma may be transmitted to each RC through a coupling line.
[0037] The control circuit 120 may be connected to the plasma generator 110 , and may also control the phase of plasma provided to each reaction chamber independently of each other.
[0038] For example, as shown in Figure 3(b), a counterclockwise plasma with a phase of 45° is supplied to RC1, a plasma with a phase of 135° offset by 90° from the plasma of RC1 is supplied to RC4, a plasma with a phase of 225° offset by 90° from the plasma of RC4 is supplied to RC3, and a plasma with a phase of 315° offset by 90° from the plasma of RC3 is supplied to RC2.
[0039] Due to this phase shift between the RCs, destructive interference can occur, so there is no "central plasma" created by constructive interference.
[0040] Another example (although not shown) is when RC1 is fed with a clockwise plasma with a phase of 0°. RC2 is fed with a plasma with a phase of 90° (90° offset from RC1). RC3 is fed with a plasma with a phase of 180° (90° offset from RC2). RC4 is fed with a plasma with a phase of 270° (90° offset from RC3).
[0041] This exemplary phase offset between the RCs does not result in a "central plasma" from constructive interference, because the phase difference would cause destructive interference at the location of the "central plasma".
[0042] This phase shift will apply to devices with more than 4 RCs.
[0043] For example, with 6 RCs instead of 4, the phase offset may be 60° instead of 90°. In general, with n RCs arranged in a platform, the phase that needs to be offset to cancel the "central plasma" effect by destructive interference may be (360 / n)°.
[0044] The phase offset will be automatically calculated in the control circuit 120 with the number of RCs, or it will be hardwired and each phase offset plasma will be transmitted to each RC, just like the example of 4 RCs.
[0045] As shown in FIG. 3( b ), the embodiment of the present disclosure may show better plasma performance compared to FIG. 3( a ).
[0046] As shown in 320 in FIG. 3( b ), the plasma is shifted by 90 degrees, and the initial phase is 45 degrees in RC1 , and in the clockwise direction, RC may be supplied with plasma having a phase increased by 90 degrees compared to the previous RC.
[0047] As shown in Table 311 of Figure 3(a), in the absence of phase shift, the plasma performance in each RC is degraded. There are even "no ignition" and "unstable" plasma conditions, and in many power ranges, "central plasma" may exist, leading to instability in the plasma.
[0048] On the other hand, as shown in Table 321 of FIG. 3( b ), even though the state is “bottom / axis plasma” in about half of the power range, the rest is “stable”.
[0049] In addition, due to destructive interference between RC, "central plasma" as well as "no ignition" and "instability" do not exist in Table 321.
[0050] As shown, simply by individually shifting the phase of the plasma provided to each RC, the plasma efficiency, as well as the quality of the processed wafers, can be greatly improved.
[0051] When providing plasma, the control circuit 120 can also change the plasma phase provided to each reaction chamber. When the 90 degree offset of the plasma of FIG. 3( b) does not produce the expected sufficient efficiency, the plasma offset can be changed in real time during the operation of the reaction chamber, such as a 60 degree starting phase in RC1 and a 90 degree phase increase from the previous RC in a clockwise RC sequence.
[0052] The arrangement of the above-described devices is merely an illustration of the application of the principles of the present invention, and many other embodiments and modifications may be made without departing from the spirit and scope of the present invention as defined in the claims. Therefore, the scope of the present invention should not be determined with reference to the above description, but with reference to the full scope of the appended claims and their equivalents.
Claims
1. A wafer processing system using plasma, the system comprising: A first reaction chamber, a second reaction chamber, a third reaction chamber, and a fourth reaction chamber disposed on the platform, each of which is configured to process a wafer; A plasma generator, which is individually coupled to the first / second / third / fourth reaction chamber and is configured to generate plasma with a specific frequency and a specific phase, and is also configured to provide the generated plasma to the first reaction chamber, the second reaction chamber, the third reaction chamber, and the fourth reaction chamber; as well as a control circuit coupled to the plasma generator and configured to adjust a phase of a plasma generated by the plasma generator; The control circuit is further configured to independently shift the phase of the plasma generated by the first reaction chamber, the second reaction chamber, the third reaction chamber, and the fourth reaction chamber.
2. The wafer processing system according to claim 1, wherein: The phase of the plasma provided to the second reaction chamber is 90 degrees ahead of the phase of the plasma provided to the first reaction chamber, and The phase of the plasma provided to the third reaction chamber is 90 degrees ahead of the phase of the plasma provided to the second reaction chamber, and The phase of the plasma supplied to the fourth reaction chamber is 90 degrees ahead of the phase of the plasma supplied to the third reaction chamber.
3. The wafer processing system according to claim 1, wherein: The phase of the plasma supplied to the second reaction chamber lags behind the phase of the plasma supplied to the first reaction chamber by 90 degrees, and The phase of the plasma provided to the third reaction chamber lags behind the phase of the plasma provided to the second reaction chamber by 90 degrees, and A phase of the plasma supplied to the fourth reaction chamber lags behind a phase of the plasma supplied to the third reaction chamber by 90 degrees.
4. A wafer processing system using plasma, the system comprising: a plurality of reaction chambers disposed on the platform, each reaction chamber being configured to process a wafer; a plasma generator, which is individually coupled to the plurality of reaction chambers and is configured to generate plasma having a specific frequency and a specific phase, and is further configured to supply the generated plasma to the plurality of reaction chambers; as well as a control circuit coupled to the plasma generator and configured to adjust a phase of a plasma generated by the plasma generator; Wherein the control circuit is further configured to independently shift the phase of the generated plasma provided to the plurality of reaction chambers.
5. The wafer processing system according to claim 4, wherein: The control circuit is also configured to shift the generated plasma by (360 / n) degrees for each of the plurality of reaction chambers, where n is the number of reaction chambers.
6. The wafer processing system according to claim 4, wherein: The control circuit is also configured to change in real time the phase of the generated plasma provided to the plurality of reaction chambers.