Silicon carbide power module and method for manufacturing silicon carbide power module

Abstract

The invention relates to the technical field of power modules, in particular to a silicon carbide power module and a manufacturing method of the silicon carbide power module. The method comprises the following steps: electrically connecting electrodes of the power chip and the silicon carbide power module through a metal plate and a metal strip; the power terminals are arranged on one side of the metal plate in a stacked mode; and performing encapsulation operation on the power terminal, the power chip, the metal strip and the metal plate. Breakdown caused by turn-on voltage oscillation and turn-off voltage overshoot at the two ends of the silicon carbide power module due to parasitic inductance is avoided, and meanwhile cost reduction and reliability improvement of the silicon carbide power module are achieved. Moreover, through reasonable planning of the power terminals and the power chips, voltage stress regulation and control of the silicon carbide power module are realized, so that the overall performance of the silicon carbide power module is improved, the situation that the silicon carbide power module fails due to changes of high current and high voltage is avoided, and the service life of the silicon carbide power module is prolonged.

Description

Technical Field

[0001] The present application relates to the technical field of power modules, and in particular to a silicon carbide power module and a method for manufacturing the silicon carbide power module. Background Art

[0002] The long-term reliability of power modules affects the safety of electric vehicle control systems. Traditional module packaging structures usually generate parasitic inductance due to the layout of metal bonding wires, power terminals and the copper-clad surface of insulating ceramic substrates.

[0003] The existence of parasitic inductance not only limits the application advantages of silicon carbide devices in the high-frequency field, but also generates voltage stress in power devices. Therefore, when the parasitic inductance exceeds the maximum value of the parasitic inductance that the power module can withstand, it will cause the power module to fail. Summary of the invention

[0004] Based on this, it is necessary to provide a silicon carbide power module and a method for manufacturing a silicon carbide power module that can prevent power module failure due to excessive parasitic inductance in order to solve the above technical problems.

[0005] In a first aspect, the present application provides a silicon carbide power module. The silicon carbide power module comprises: a power terminal, a power chip, a metal strip and a metal plate; the metal strip is welded to the metal plate; the power chip and the electrodes of the silicon carbide power module are electrically connected through the metal plate and the metal strip;

[0006] The power terminals are stacked on one side of the metal plate.

[0007] In one embodiment, the power terminals include a positive power terminal, a negative power terminal and at least one intermediate power terminal, and each of the intermediate power terminals is evenly distributed between the positive power terminal and the negative power terminal.

[0008] In one of the embodiments, the silicon carbide power module further includes a double-sided copper-clad ceramic substrate;

[0009] The double-sided copper-clad ceramic substrate and the power chip are connected by welding.

[0010] In one of the embodiments, the silicon carbide power module further includes an anti-parallel diode;

[0011] The anti-parallel diode is used to suppress parasitic conduction caused by Miller capacitance in the silicon carbide power module.

[0012] In one of the embodiments, the power chip refers to a silicon carbide power chip made of silicon carbide.

[0013] In one of the embodiments, the silicon carbide power chip is connected with insulating heat dissipation material.

[0014] In one of the embodiments, a coefficient difference between a first thermal expansion coefficient of the metal plate and a second thermal expansion coefficient of the power chip is less than a preset difference threshold.

[0015] In a second aspect, the present application provides a method for manufacturing a silicon carbide power module. The method comprises:

[0016] The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips;

[0017] The power terminals are stacked on one side of the metal plate;

[0018] Potting operations are performed on power terminals, power chips, metal strips and metal plates.

[0019] In a third aspect, the present application also provides a manufacturing device for a silicon carbide power module. The device comprises:

[0020] A connection module, used to electrically connect the power chip and the electrodes of the silicon carbide power module through metal plates and metal strips;

[0021] A layout module, used to stack the power terminals on one side of the metal plate;

[0022] The potting module is used to potting power terminals, power chips, metal strips and metal plates.

[0023] In a fourth aspect, the present application further provides a computer device. The computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the following steps when executing the computer program:

[0024] The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips;

[0025] The power terminals are stacked on one side of the metal plate;

[0026] Potting operations are performed on power terminals, power chips, metal strips and metal plates.

[0027] In a fifth aspect, the present application further provides a computer-readable storage medium. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0028] The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips;

[0029] The power terminals are stacked on one side of the metal plate;

[0030] Potting operations are performed on power terminals, power chips, metal strips and metal plates.

[0031] In a sixth aspect, the present application further provides a computer program product. The computer program product includes a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0032] The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips;

[0033] The power terminals are stacked on one side of the metal plate;

[0034] Potting operations are performed on power terminals, power chips, metal strips and metal plates.

[0035] The above-mentioned silicon carbide power module and the manufacturing method of the silicon carbide power module are stacked and arranged on one side of the metal plate, so that the silicon carbide power module always has a group of terminals with the same current magnitude and opposite direction during the switching transient state; thereby realizing the magnetic flux cancellation for the silicon carbide power module, and using the negative mutual inductance to reduce the parasitic inductance on the terminal; the parasitic inductance is greatly reduced, solving the traditional power module packaging reliability and device failure problems, and realizing a safe and efficient device switching process. The turn-on voltage oscillation and turn-off voltage overshoot at both ends of the silicon carbide power module caused by parasitic inductance are avoided, and the breakdown caused by the turn-on voltage oscillation and the turn-off voltage overshoot at both ends of the silicon carbide power module are avoided, and the cost is reduced and the reliability of the silicon carbide power module is improved. In addition, through the reasonable planning of the power terminals and power chips, the voltage stress regulation of the silicon carbide power module is realized, thereby improving the overall performance of the silicon carbide power module, avoiding the failure of the silicon carbide power module due to the changes of high current and high voltage, and improving the service life of the silicon carbide power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 is an internal schematic diagram of a silicon carbide power module in one embodiment;

[0037] Figure 2 is a schematic diagram of a stacked terminal in one embodiment;

[0038] Figure 3 is an application environment diagram of a method for manufacturing a silicon carbide power module in one embodiment;

[0039] Figure 4 is a schematic flow chart of a method for manufacturing a silicon carbide power module in one embodiment;

[0040] Figure 5 is a structural block diagram of a manufacturing device for a silicon carbide power module in one embodiment;

[0041] Figure 6 FIG. 4 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0043] It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application. In the description of the present application, the description of the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms is not necessarily for the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples without contradicting each other.

[0044] The long-term reliability of silicon carbide power modules affects the safety of electric vehicle control systems. Traditional silicon carbide power module packaging structures usually produce parasitic inductance due to the layout of metal bonding wires, power terminals and the copper-clad surface of insulating ceramic substrates. The existence of parasitic inductance not only limits the application advantages of silicon carbide power modules in high-frequency fields, but also generates voltage stress in silicon carbide power modules. When the parasitic inductance exceeds the maximum value of the parasitic inductance that the power module can withstand, it will cause the power module to fail. Specifically, in power supply and power electronic converter applications, power semiconductor (IGBT, MOSFET, SiC, GaN, etc.) devices are widely used, and module packaging is generally used in high-power applications. The packaging form that is widely used now: the power module is mainly composed of a metal base plate, a welding layer, a DBC (double-sided copper-clad ceramic substrate), an AMB (foil-brazed copper-clad ceramic substrate), an insulating heat-dissipating resin film or other insulating heat-dissipating materials, binding wires, a shell and silicone, etc.; after the power semiconductor chip is fixed to the insulating heat-dissipating material by welding, it is electrically connected through aluminum binding wires, and then the DBC or other insulating heat-dissipating materials are welded to the metal base plate through reflow soldering or sintering processes. The heat generated by the power semiconductor chip is conducted to the metal base plate through the DBC or other insulating heat-dissipating materials and the welding layer, and the metal base plate is then cooled by air cooling or water cooling.

[0045] In the electric vehicle drive system, the inverter is connected to the electric drive motor, and the power module is placed in the inverter. The switching speed of the silicon carbide power module is fast. When used in high-current applications such as electric vehicle inverters, it introduces a huge di / dt into the device circuit, which acts on the parasitic inductance of the loop to cause the turn-on voltage oscillation and turn-off voltage overshoot at both ends of the device, reducing the inverter output characteristics, and even causing device breakdown in severe cases. Therefore, in order to avoid excessive voltage stress and give full play to the fast switching characteristics of the silicon carbide power module, the parasitic inductance introduced by the packaging structure must be optimized.

[0046] To this end, the present application proposes a low-inductance packaging structure to replace the traditional packaging form, and the main changes include power terminals and chip bonding wires. The power terminals are laid out in a stacked terminal layout, which greatly reduces parasitic inductance. The chip aluminum bonding wires are changed to metal strips, and then the metal strips are connected to the metal electrodes of the chip and the power module by welding. Compared with the existing method of directly connecting the chip and the ceramic substrate through aluminum bonding wires, the thermal expansion coefficient of the metal connecting plate is closer to that of the power chip, and the power cycle life is greatly improved; the contact area with the surface of the power chip is increased, the parasitic inductance is reduced, and the fast switching characteristics of the silicon carbide power module are fully utilized.

[0047] In one embodiment, a silicon carbide power module includes: a power terminal, a power chip, a metal strip and a metal plate; the metal strip is welded to the metal plate; the power chip and the electrodes of the silicon carbide power module are electrically connected through the metal plate and the metal strip; the power terminal is stacked on one side of the metal plate.

[0048] In one embodiment of the present application, Figure 1 As shown, the metal strip is connected to a 1.0 mm thick metal plate by welding or crimping, and then the metal strip is connected to the power chip and the electrode of the power module that have been connected to the insulating heat dissipation material by welding; and when the power terminal is stacked, it specifically includes: the power terminal includes a positive power terminal, a negative power terminal and at least one intermediate power terminal, and each intermediate power terminal is evenly distributed between the positive power terminal and the negative power terminal. In this way, the reliability and device failure problems of traditional power module packaging are solved, and a safe and efficient device switching process is achieved. The turn-on voltage oscillation and turn-off voltage overshoot at both ends of the silicon carbide power module caused by parasitic inductance are avoided, and at the same time, cost reduction and reliability improvement of silicon carbide power modules are achieved.

[0049] Further explanation, the power terminal includes a positive power terminal, a negative power terminal and at least one intermediate power terminal, and each intermediate power terminal is evenly distributed between the positive power terminal and the negative power terminal. Figure 2As shown, the silicon carbide power module always has a group of terminals with the same current magnitude and opposite current direction during the switching transient state; thereby achieving magnetic flux cancellation for the silicon carbide power module, and utilizing the negative mutual inductance characteristic to reduce the parasitic inductance on the terminals.

[0050] Further explanation, the silicon carbide power module also includes a double-sided copper-clad ceramic substrate; the double-sided copper-clad ceramic substrate and the power chip are connected by welding. The silicon carbide power module also includes an anti-parallel diode; the anti-parallel diode is used to suppress the parasitic conduction caused by the Miller capacitance in the silicon carbide power module. Since the parasitic conduction caused by the Miller capacitance can only be suppressed by increasing the gate capacitance or reducing the gate loop impedance in the off state, the anti-parallel diode has a certain effect on suppressing the parasitic conduction.

[0051] To further explain, power chips refer to silicon carbide power chips made of silicon carbide; and, silicon carbide power chips are connected with insulating heat dissipation materials. Silicon carbide power chips can significantly improve the power density of electric vehicle inverters and greatly reduce the size of power modules; reduce the proportion of inverters in the volume and weight of the entire vehicle, and reduce the cost of devices and vehicles. Silicon carbide power chips can also work normally at high junction temperatures and are not prone to thermal failure.

[0052] It is further explained that the coefficient difference between the first thermal expansion coefficient of the metal plate and the second thermal expansion coefficient of the power chip is less than a preset difference threshold. Since the thermal expansion coefficient of the metal plate is closer to that of the silicon carbide power chip, the power cycle life is greatly improved; compared with the existing method of directly connecting the silicon carbide power chip and the ceramic substrate through a metal strip, the surface of the silicon carbide power chip does not require a thicker copper foil layer, the process is simple and the cost is low.

[0053] Further, the metal strip is made of at least one material of copper, aluminum, gold, and silver. The metal plate is made of at least one material of copper, aluminum, gold, and silver. The thickness of the metal plate is 500um~2mm.

[0054] To further illustrate, during the welding operation, an alloy sheet may be placed between the power chip and the tube shell, and then heated to the alloy eutectic point in a vacuum or protective atmosphere, and melted into a liquid alloy to form a good ohmic contact through the solder.

[0055] The above-mentioned silicon carbide power module and the manufacturing method of the silicon carbide power module are stacked and arranged on one side of the metal plate, so that the silicon carbide power module always has a group of terminals with the same current magnitude and opposite direction during the switching transient state; thereby realizing the magnetic flux cancellation for the silicon carbide power module, and using the negative mutual inductance to reduce the parasitic inductance on the terminal; the parasitic inductance is greatly reduced, solving the traditional power module packaging reliability and device failure problems, and realizing a safe and efficient device switching process. The turn-on voltage oscillation and turn-off voltage overshoot at both ends of the silicon carbide power module caused by parasitic inductance are avoided, and the breakdown caused by the turn-on voltage oscillation and the turn-off voltage overshoot at both ends of the silicon carbide power module are avoided, and the cost is reduced and the reliability of the silicon carbide power module is improved. In addition, through the reasonable planning of the power terminals and power chips, the voltage stress regulation of the silicon carbide power module is realized, thereby improving the overall performance of the silicon carbide power module, avoiding the failure of the silicon carbide power module due to the changes of high current and high voltage, and improving the service life of the silicon carbide power module.

[0056] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0057] In the description of the present invention, unless otherwise specified, "multiple" means two or more than two; the orientations or positional relationships indicated by the terms "upper", "lower", "left", "right", "inner", "outer", "front end", "rear end", "head", "tail", etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0058] The method for manufacturing a silicon carbide power module provided in the embodiment of the present application can be applied to Figure 3In the application environment shown. Among them, the terminal 102 communicates with the server 104 through the network. The data storage system can store the data that the server 104 needs to process. The data storage system can be integrated on the server 104, or it can be placed on the cloud or other network servers. The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips; the power terminals are stacked on one side of the metal plate; and the power terminals, power chips, metal strips and metal plates are encapsulated. Among them, the terminal 102 can be but is not limited to various personal computers, laptops, smart phones, tablets, Internet of Things devices and portable wearable devices. The Internet of Things devices can be smart speakers, smart TVs, smart air conditioners, smart car-mounted devices, etc. Portable wearable devices can be smart watches, smart bracelets, head-mounted devices, etc. The server 104 can be implemented with an independent server or a server cluster consisting of multiple servers.

[0059] In one embodiment, Figure 4 As shown, a method for manufacturing a silicon carbide power module is provided, and the method is applied to Figure 1 The terminal 102 in the example is used as an example to illustrate, and the following steps are included:

[0060] S301 , electrically connecting the power chip and the electrodes of the silicon carbide power module through metal plates and metal strips.

[0061] The metal strip may be a copper strip.

[0062] In one embodiment of the present application, the copper strip can be connected to a 1.0 mm thick metal plate by welding or crimping, and then the copper strip can be connected to a power chip and an electrode of a power module that have been connected to an insulating heat dissipation material by welding.

[0063] It is further explained that the larger the area of ​​the metal strip and the thicker the metal plate, the better the conductivity of the power module. However, the size of the power module cannot be increased infinitely, and the larger the area of ​​the metal strip and the thicker the metal plate, the higher the cost.

[0064] S302, stacking and laying out the power terminals on one side of the metal plate.

[0065] Specifically, the power terminal includes a positive power terminal, a negative power terminal and at least one intermediate power terminal, and each intermediate power terminal is evenly distributed between the positive power terminal and the negative power terminal, so that the intermediate power terminal is placed between the positive power terminal and the negative power terminal in parallel with the AC terminal and at equal intervals.

[0066] S303, performing encapsulation operation on the power terminals, the power chips, the metal strips and the metal plates.

[0067] The above-mentioned silicon carbide power module and the manufacturing method of the silicon carbide power module are stacked and arranged on one side of the metal plate, so that the silicon carbide power module always has a group of terminals with the same current magnitude and opposite direction during the switching transient state; thereby realizing the magnetic flux cancellation for the silicon carbide power module, and using the negative mutual inductance to reduce the parasitic inductance on the terminal; the parasitic inductance is greatly reduced, solving the traditional power module packaging reliability and device failure problems, and realizing a safe and efficient device switching process. The turn-on voltage oscillation and turn-off voltage overshoot at both ends of the silicon carbide power module caused by parasitic inductance are avoided, and the breakdown caused by the turn-on voltage oscillation and the turn-off voltage overshoot at both ends of the silicon carbide power module are avoided, and the cost is reduced and the reliability of the silicon carbide power module is improved. In addition, through the reasonable planning of the power terminals and power chips, the voltage stress regulation of the silicon carbide power module is realized, thereby improving the overall performance of the silicon carbide power module, avoiding the failure of the silicon carbide power module due to the changes of high current and high voltage, and improving the service life of the silicon carbide power module.

[0068] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0069] Based on the same inventive concept, the embodiment of the present application also provides a manufacturing device for a silicon carbide power module for implementing the manufacturing method of the silicon carbide power module involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in the embodiments of one or more manufacturing devices for silicon carbide power modules provided below can refer to the limitations of the manufacturing method of silicon carbide power modules above, and will not be repeated here.

[0070] In one embodiment, Figure 5 As shown, a manufacturing device for a silicon carbide power module is provided, comprising: a connection module 10, a layout module 20 and a potting module 30, wherein:

[0071] The connection module 10 is used to electrically connect the power chip and the electrodes of the silicon carbide power module through metal plates and metal strips.

[0072] The layout module 20 is used to stack the power terminals on one side of the metal plate.

[0073] The encapsulation module 30 is used to perform encapsulation operations on power terminals, power chips, metal strips and metal plates.

[0074] In one embodiment, a silicon carbide power module comprises: a power terminal, a power chip, a metal strip and a metal plate; the metal strip is welded to the metal plate; the power chip and the electrodes of the silicon carbide power module are electrically connected through the metal plate and the metal strip;

[0075] The power terminals are stacked on one side of the metal plate.

[0076] In one embodiment, the power terminals include a positive power terminal, a negative power terminal, and at least one intermediate power terminal, and the intermediate power terminals are evenly distributed between the positive power terminal and the negative power terminal.

[0077] In one embodiment, the silicon carbide power module further includes a double-sided copper-clad ceramic substrate;

[0078] The double-sided copper-clad ceramic substrate and the power chip are connected by welding.

[0079] In one embodiment, the silicon carbide power module further includes an anti-parallel diode;

[0080] The anti-parallel diode is used to suppress the parasitic conduction caused by the Miller capacitance in the SiC power module.

[0081] In one embodiment, the power chip refers to a silicon carbide power chip made of silicon carbide; and the silicon carbide power chip is connected with an insulating heat dissipation material.

[0082] In one embodiment, a coefficient difference between a first thermal expansion coefficient of the metal plate and a second thermal expansion coefficient of the power chip is smaller than a preset difference threshold.

[0083] Each module in the manufacturing device of the silicon carbide power module can be implemented in whole or in part by software, hardware and a combination thereof. Each module can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute the operations corresponding to each module.

[0084] The embodiments of the present invention are given for the purpose of illustration and description, and are not intended to be exhaustive or to limit the invention to the disclosed forms. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the present invention and to enable those of ordinary skill in the art to understand the present invention and thereby design various embodiments with various modifications suitable for specific uses.

[0085] In one embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as follows: Figure 6 As shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. Among them, the processor, the memory and the input / output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and the external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a method for manufacturing a silicon carbide power module is realized. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device shell, or an external keyboard, touchpad or mouse.

[0086] Those skilled in the art will understand that Figure 6 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0087] In one embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0088] The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips;

[0089] The power terminals are stacked on one side of the metal plate;

[0090] Potting operations are performed on power terminals, power chips, metal strips and metal plates.

[0091] In one embodiment, a computer readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0092] The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips;

[0093] The power terminals are stacked on one side of the metal plate;

[0094] Potting operations are performed on power terminals, power chips, metal strips and metal plates.

[0095] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0096] The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips;

[0097] The power terminals are stacked on one side of the metal plate;

[0098] Potting operations are performed on power terminals, power chips, metal strips and metal plates.

[0099] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant laws, regulations and standards of relevant countries and regions.

[0100] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0101] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0102] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A silicon carbide power module, characterized in that: The silicon carbide power module comprises: a power terminal, a power chip, a metal strip and a metal plate; the metal strip is welded to the metal plate; the power chip and the electrodes of the silicon carbide power module are electrically connected through the metal plate and the metal strip; The power terminals are stacked on one side of the metal plate.

2. The silicon carbide power module according to claim 1, characterized in that: The power terminals include a positive power terminal, a negative power terminal and at least one intermediate power terminal, and each of the intermediate power terminals is evenly distributed between the positive power terminal and the negative power terminal.

3. The silicon carbide power module according to claim 1, characterized in that: The silicon carbide power module also includes a double-sided copper-clad ceramic substrate; The double-sided copper-clad ceramic substrate and the power chip are connected by welding.

4. The silicon carbide power module according to claim 1, characterized in that: The silicon carbide power module also includes an anti-parallel diode; The anti-parallel diode is used to suppress parasitic conduction caused by Miller capacitance in the silicon carbide power module.

5. The silicon carbide power module according to claim 1, characterized in that: The power chip refers to a silicon carbide power chip made of silicon carbide; and the silicon carbide power chip is connected with insulating heat dissipation material.

6. The silicon carbide power module according to claim 1, characterized in that: A coefficient difference between a first thermal expansion coefficient of the metal plate and a second thermal expansion coefficient of the power chip is less than a preset difference threshold.

7. A method for manufacturing a silicon carbide power module, characterized in that: The method comprises: The electrodes of the power chip and the silicon carbide power module are electrically connected through metal plates and metal strips; The power terminals are stacked on one side of the metal plate; Potting operations are performed on power terminals, power chips, metal strips and metal plates.

8. A manufacturing device for a silicon carbide power module, characterized in that: The device comprises: A connection module, used to electrically connect the power chip and the electrodes of the silicon carbide power module through metal plates and metal strips; A layout module, used to stack the power terminals on one side of the metal plate; The potting module is used to potting power terminals, power chips, metal strips and metal plates.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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