Intelligent power module

Abstract

The invention discloses an intelligent power module. The intelligent power module is composed of an IMS heat dissipation substrate, an MOS / IGBT chip, an FRD chip, a Halfbridge HVIC chip, a 1channel HVIC chip, a pin frame, a bonding wire and a plastic package material. The pin frame is welded on the upper surface of the IMS heat dissipation substrate; the MOS / IGBT chip and the FRD chip are welded at the upper end of the IMS heat dissipation substrate; the Halfbridge HVIC chip and the 1channel HVIC chip are both adhered to the upper end of the IMS heat dissipation substrate, and the Halfbridge HVIC chip and the 1channel HVIC chip are adhered to the lower end of the A bonding pad of the 1channel HVIC chip is directly bonded with a bonding pad of a grid electrode of the MOS / IGBT chip through a bonding wire; the Halfbridge HVIC chip is connected with the 1channel HVIC chip through a bonding wire, and a bonding pad of the Halfbridge HVIC chip and a bonding pad of the 1channel HVIC chip are connected with the IMS substrate in a bonding mode. A part of the pin frame, the IMS heat dissipation substrate, the MOS / IGBT chip, the FRD chip, the Halfbridge HVIC chip, the 1channel HVIC chip and the bonding wire are wrapped by a plastic package material to form protection. According to the invention, a 1200V IPM module can be realized, so that a traditional 1200V power system is miniaturized and integrated, and the reliability and the use convenience are improved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to an intelligent power module. Background Art

[0002] Intelligent power module, or IPM (Intelligent Power Module), is a power semiconductor system product that combines power electronics and integrated circuit technology. Intelligent power module integrates power switch devices and high-voltage drive circuits, and has built-in fault detection circuits such as undervoltage, overcurrent and overheating. The voltage is generally 600V, and the current is generally 1A to 50A. The integrated power devices are silicon IGBT and silicon MOSFET. On the one hand, the intelligent power module receives the control signal of the MCU, performs voltage and current amplification, high and low voltage isolation, and drives the subsequent circuit to work. On the other hand, it performs abnormal detection and self-protection, and sends abnormal state detection signals back to the MCU. Compared with traditional discrete solutions, intelligent power modules have won an increasingly large market with their high integration and high reliability. They are especially suitable for inverters and various inverter systems for driving motors. They are an ideal power electronic device for industrial machinery motor drives, servo motor drives, variable frequency home appliances, electric vehicles, and new energy. The system structure of IPM mainly has three important components. IGBT is the main power switch, FRD is used with IGBT, and HVIC is a high-voltage integrated circuit used to drive and protect IGBT.

[0003] The current HVIC voltage inside the IPM can usually only reach 600-800V in chip technology, and cannot reach 1200V. A 1200V IPM requires a 1200V HVIC and 1200V IGBT and FRD at the same time. Therefore, although 1200V or even higher IGBT and FRD are already very mature, there are relatively few 1200V IPMs due to the lack of matching HVIC. Only a few IDM companies abroad that can tape out 1200V HVIC can develop 1200V IPMs. However, 1200V power modules are widely used in power systems such as industry and photovoltaics. At present, the 1200V power system generally separates the power module PM and the driver board, which occupies a relatively large space in the system and affects the power density of the system. Therefore, an intelligent power module is proposed. Summary of the invention

[0004] The purpose of the present invention is to provide an intelligent power module to solve the existing problems.

[0005] In order to solve the above technical problems, the present invention is achieved through the following technical solutions:

[0006] The present invention is an intelligent power module, which is composed of an IMS heat dissipation substrate, a MOS / IGBT chip, an FRD chip, a Halfbridge HVIC chip, a 1channel HVIC chip, a lead frame, a bonding wire, and a plastic packaging material;

[0007] The lead frame is welded to the upper surface of the IMS heat dissipation substrate; the MOS / IGBT chip and the FRD chip are welded to the upper end of the IMS heat dissipation substrate; the Halfbridge HVIC chip and the 1channel HVIC chip are both bonded to the upper end of the IMS heat dissipation substrate; the bonding pad of the 1channel HVIC chip is directly bonded to the gate bonding pad of the MOS / IGBT chip through a bonding wire; the Halfbridge HVIC chip and the 1channel HVIC chip are connected through a bonding wire, and the bonding pads of the Halfbridge HVIC chip and the 1channel HVIC chip are bonded to the IMS substrate; a part of the lead frame, the IMS heat dissipation substrate, the MOS / IGBT chip, the FRD chip, the Halfbridge HVIC chip, the 1channel HVIC chip and the bonding wire are wrapped with a plastic packaging material to form protection.

[0008] Furthermore, the MOS / IGBT chip, FRD chip, Halfbridge HVIC chip, and 1channel HVIC chip are all electronic components; the IMS heat dissipation substrate, lead frame, and bonding wires are all connectors.

[0009] A system circuit of an intelligent power module comprises a half-bridge IPM system, wherein the half-bridge IPM system is composed of a half-bridge high-voltage drive system, a single-channel high-voltage drive system, two power MOS / IGBT chips, and two FRD chips; a high-voltage area power supply VB and a high-voltage area ground VS of the half-bridge high-voltage drive system are connected to a low-voltage area power supply VCC2 and a low-voltage area ground VSS2 of the single-channel high-voltage drive system; a high-side output HO of the half-bridge high-voltage drive system is connected to an input IN of the single-channel high-voltage drive system; the MOS / IGBT chip is driven by the output HO2 of the single-channel high-voltage drive system; and a 1200V MOS / IGBT chip is driven by superimposing a 600V Halfbridge HVIC chip and a 600V 1channel HVIC chip.

[0010] Further, the half-bridge high-voltage drive (Halfbridge HVIC) system includes an input Schmitt circuit, a filter circuit, a level shift circuit, a dead zone interlock circuit, a pulse generation circuit, a 600V high-side drive circuit (in the high-voltage area), a high-side filter circuit (in the high-voltage area), a low-side delay circuit, a low-side drive circuit, an ITRIP (current trigger) circuit, a temperature detection circuit, a FAULT logic and an output circuit. The half-bridge high-voltage drive (Halfbridge HVIC) system integrates drive and over-current protection, under-voltage protection, and over-temperature protection functions;

[0011] Overcurrent protection: A sampling resistor is set between the power device of the peripheral circuit and GND. As the current through the sampling resistor increases, the voltage at both ends will also increase; ITRIP detects the voltage of the sampling resistor to GND. There is a comparator inside ITRIP. When the voltage detected by ITRIP exceeds the threshold of the comparator (usually 0.5V), the comparator will reverse. The reverse signal is processed by the logic circuit to shut off the signal of the entire circuit, so that the output of the driver IC is not controlled by the input and directly outputs a low level, thereby shutting off the current of the driven power device;

[0012] Over-temperature protection: In the temperature detection circuit, the internal voltage changes linearly with the temperature. When the temperature is higher than a certain point, the internal node voltage will also be higher than a certain voltage threshold. Similarly, through the comparator, when the detected voltage exceeds the threshold of the comparator (the reference voltage is set according to the required protection temperature), the comparator will reverse. The inversion signal is processed by the logic circuit to shut off the signal of the entire circuit, so that the output of the driver IC is not controlled by the input and directly outputs a low level, thereby shutting off the current of the driven power device;

[0013] Undervoltage protection: The half-bridge high-voltage drive (Halfbridge HVIC) system is internally provided with a circuit for collecting the VCC voltage. The collected voltage enters the internal comparator through voltage division processing. Similarly, the reference voltage of the comparator can be set, so that the voltage value of the undervoltage protection can be set; at the same time, the VCC voltage division circuit will change the voltage division value according to the working state (normal working state, undervoltage protection state), so that the point at which the circuit resumes normal operation after the undervoltage protection is adjusted when the VCC voltage returns to normal.

[0014] Furthermore, the single-channel high-voltage drive (1channel HVIC) system includes an input Schmitt circuit, a filter circuit, a level shift circuit, a pulse generating circuit, a 600V high-side drive circuit (within the high-voltage area) and a high-side filter circuit (within the high-voltage area), and the single-channel high-voltage drive (1channel HVIC) system only needs to have a driving function.

[0015] A packaging method for an intelligent power module comprises the following steps:

[0016] S1. First, a copper wiring layer is set on the IMS heat dissipation substrate, and then a MOS / IGBT chip, an FRD chip, a Halfbridge HVIC chip, and a 1channel HVIC chip are assembled on the IMS heat dissipation substrate to form a circuit connection with the copper wiring layer;

[0017] S2. The copper wiring layer under the Halfbridge HVIC chip, 1channel HVIC chip, and MOS / IGBT chip must be isolated, and the isolation voltage must be at least 1200V;

[0018] S3, attaching the Halfbridge HVIC chip, the 1channel HVIC chip, the MOS / IGBT chip, and the FRD chip to the chip pads of the wiring layer by welding, and attaching the lead frame to the pin pads of the wiring layer by welding;

[0019] S4, bonding the wire bonding points of the Halfbridge HVIC chip, the 1channel HVIC chip, the MOS / IGBT chip, and the FRD chip to the wire bonding points of the wiring layer, as well as the bonding points between the chips, using aluminum bonding wires;

[0020] S5. Finally, wrap all chips, IMS heat dissipation substrates and part of the pin frame in plastic packaging materials to form physical protection.

[0021] Furthermore, the plastic encapsulation material on the IMS heat dissipation substrate side is very thin, and the heat is dissipated through the heat sink added on this side; a certain creepage distance is maintained between the lead frame and the heat sink to ensure that the withstand voltage between the lead and the heat sink is above 1200V.

[0022] The present invention has the following beneficial effects:

[0023] The present invention can realize a 1200V IPM module, miniaturize and integrate the traditional 1200V power system, and improve reliability and ease of use. 1200V MOS / IGBT chips and FRD chips are already mature, and the design and process of 600V HVIC chips are also mature. Therefore, a 1200V high-voltage inverter system is realized by adopting mature technology, innovative system architecture and circuit design, and innovative packaging design.

[0024] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for describing the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0026] Figure 1 It is a structural schematic diagram of an intelligent power module;

[0027] Figure 2 A system circuit diagram of an intelligent power module;

[0028] Figure 3 This is the circuit diagram of the half-bridge high voltage drive system;

[0029] Figure 4 This is a circuit diagram of a single-channel high-voltage drive system;

[0030] Figure 5 It is a cross-sectional structural schematic diagram of an intelligent power module;

[0031] Figure 6 A schematic diagram of a multi-module combination as an alternative to an intelligent power module.

[0032] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0033] 1. FRD chip; 2. Plastic packaging material; 3. Bonding wire; 4. IMS heat dissipation substrate; 5. Lead frame; 6. MOS / IGBT chip; 7. Halfbridge HVIC chip; 8. 1channel HVIC chip; 9. Copper wiring layer. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] In the description of the present invention, it should be understood that the terms "upper", "middle", "outer", "inner" and the like indicating directions or positional relationships are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the components or elements referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0036] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] See also Figure 1-Figure 5 As shown, the intelligent power module of this embodiment is composed of an IMS heat dissipation substrate 4, a MOS / IGBT chip 6, an FRD chip 1, a Halfbridge HVIC chip 7, a 1channel HVIC chip 8, a lead frame 5, a bonding wire 3, and a plastic packaging material 2;

[0038] The lead frame 5 is welded to the upper surface of the IMS heat dissipation substrate 4; the MOS / IGBT chip 6 and the FRD chip 1 are welded to the upper end of the IMS heat dissipation substrate 4; the Halfbridge HVIC chip 7 and the 1channel HVIC chip 8 are both bonded to the upper end of the IMS heat dissipation substrate 4; the bonding pad of the 1channel HVIC chip 8 is directly bonded to the gate bonding pad of the MOS / IGBT chip 6 through the bonding wire 3;

[0039] The Halfbridge HVIC chip 7 and the 1channel HVIC chip 8 are connected via bonding wires 3, and the bonding pads of the Halfbridge HVIC chip 7 and the 1channel HVIC chip 8 are bonded to the IMS substrate; a portion of the lead frame 5, the IMS heat dissipation substrate 4, the MOS / IGBT chip 6, the FRD chip 1, the Halfbridge HVIC chip 7, the 1channel HVIC 8 chip and the bonding wires 3 are wrapped with a plastic encapsulation material 2 to form protection.

[0040] In one of the embodiments, the MOS / IGBT chip 6, the FRD chip 1, the Halfbridge HVIC chip 7, and the 1channel HVIC chip 8 are all electronic components; the IMS heat dissipation substrate 4, the lead frame 5, and the bonding wire 3 are all connectors.

[0041] The system circuit of the intelligent power module of this embodiment includes a half-bridge IPM system, which is composed of a half-bridge high-voltage drive system, a single-channel high-voltage drive system, two power MOS / IGBT chips 6, and two FRD chips 1; the high-voltage area power supply VB and the high-voltage area ground VS of the half-bridge high-voltage drive system are connected to the low-voltage area power supply VCC2 and the low-voltage area ground VSS2 of the single-channel high-voltage drive system, the high-side output HO of the half-bridge high-voltage drive system is connected to the input IN of the single-channel high-voltage drive system, and the output HO2 of the single-channel high-voltage drive system drives the MOS / IGBT chip 6; the 1200V MOS / IGBT chip 6 is driven by superimposing the 600V Halfbridge HVIC chip 7 and the 600V1channel HVIC chip 8.

[0042] In one embodiment, the half-bridge high-voltage drive system includes an input Schmitt circuit, a filter circuit, a level shift circuit, a dead zone interlock circuit, a pulse generation circuit, a 600V high-side drive circuit (in the high-voltage area), a high-side filter circuit (in the high-voltage area), a low-side delay circuit, a low-side drive circuit, an ITRIP (current trigger) circuit, a temperature detection circuit, a FAULT logic and an output circuit, and the half-bridge high-voltage drive system integrates drive and over-current protection, under-voltage protection, and over-temperature protection functions;

[0043] Overcurrent protection: A sampling resistor is set between the power device of the peripheral circuit and GND. When the current passing through the sampling resistor increases, the voltage at both ends will also increase; ITRIP detects the voltage of the sampling resistor to GND. There is a comparator inside ITRIP. When the voltage detected by ITRIP exceeds the threshold of the comparator, the comparator will reverse. The reverse signal is processed by the logic circuit to shut off the signal of the entire circuit, so that the output of the driver IC is not controlled by the input and directly outputs a low level, thereby shutting off the current of the driven power device;

[0044] Over-temperature protection: In the temperature detection circuit, the internal voltage changes linearly with the temperature. When the temperature is higher than a certain point, the internal node voltage will also be higher than a certain voltage threshold. Similarly, through the comparator, when the detected voltage exceeds the threshold of the comparator, the comparator will reverse. The inversion signal is processed by the logic circuit to shut down the signal of the entire circuit, so that the output of the driver IC is not controlled by the input and directly outputs a low level, thereby shutting down the current of the driven power device;

[0045] Undervoltage protection: A circuit for collecting VCC voltage is provided inside the half-bridge high-voltage drive system. The collected voltage enters the internal comparator through voltage division. Similarly, the reference voltage of the comparator can be set, so that the voltage value of undervoltage protection can be set; at the same time, the VCC voltage divider circuit will change the voltage divider value according to the working state (normal working state, undervoltage protection state), so as to adjust the point at which the circuit resumes normal operation when the VCC voltage returns to normal after undervoltage protection.

[0046] In one embodiment, a single-channel high-voltage drive system includes an input Schmitt circuit, a filter circuit, a level shifting circuit, a pulse generating circuit, a 600V high-side drive circuit (within the high-voltage area) and a high-side filter circuit (within the high-voltage area). The single-channel high-voltage drive system only needs to have a driving function.

[0047] The packaging method of the intelligent power module of this embodiment includes the following steps:

[0048] S1, firstly, a copper wiring layer 9 is provided on the IMS heat dissipation substrate 4, and then a MOS chip, an IGBT chip 6, an FRD chip 1, a Halfbridge HVIC chip 7, and a 1channel HVIC chip 8 are assembled on the IMS heat dissipation substrate 4, so that the copper wiring layer 9 forms a circuit connection;

[0049] S2, the copper wiring layer 9 under the Halfbridge HVIC chip 7, the 1channel HVIC chip 8, and the MOS / IGBT chip 6 must be isolated, and the isolation voltage is at least 1200V;

[0050] S3, attaching the Halfbridge HVIC chip 7, the 1channel HVIC chip 8, the MOS / IGBT chip 6, and the FRD chip 1 to the chip pads of the wiring layer by welding, and attaching the lead frame 5 to the pin pads of the wiring layer by welding;

[0051] S4, bonding the wire bonding points of the Halfbridge HVIC chip 7, the 1channel HVIC chip 8, the MOS / IGBT chip 6, the FRD chip 1 to the wire bonding points of the wiring layer, and the bonding points between the chips, using the aluminum bonding wire 3;

[0052] S5. Finally, all chips, the IMS heat dissipation substrate 4 and part of the lead frame 5 are wrapped in the plastic packaging material 2 to form physical protection.

[0053] In one embodiment, the plastic encapsulation material 2 on the side of the IMS heat dissipation substrate 4 is very thin, and the heat is dissipated through the heat sink added on this side; a certain creepage distance is maintained between the lead frame 5 and the heat sink to ensure that the withstand voltage between the lead and the heat sink is above 1200V.

[0054] See also Figure 6 As shown, this embodiment is an alternative to the intelligent power module:

[0055] Multi-module combination

[0056] like Figure 6 As shown, a three-phase inverter circuit composed of three power modules adopts three power modules, the P ends of the three modules are connected, the N ends of the three power modules are respectively connected to three sampling resistors, and the low potential ends of the three sampling resistors are connected to the power ground GND1; the high potential ends of the three sampling resistors are respectively connected back to the ITRIP ends of each power module to form three independent overcurrent detection circuits, which can detect overcurrent in each phase separately; the common end connected to the three P ends and the power ground are connected to energy storage high-voltage capacitors and filtering high-voltage capacitors, and the voltage of the high-voltage capacitor depends on the system; VB2 and VS2 of the three power modules are respectively powered by three groups of isolated power supplies; VCC and VSS of the three modules are respectively connected to a unified power supply, and the power ground GND2 is a digital ground; the output ends U\V\W of the three modules form a three-phase output; the input ends and FO output ends of the three modules are connected to the I / O port of the MCU to transmit signals.

[0057] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0058] The preferred embodiments of the present invention disclosed above are only used to help explain the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to the specific implementation methods described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. An intelligent power module, characterized in that: The intelligent power module is composed of an IMS heat dissipation substrate, a MOS / IGBT chip, an FRD chip, a Halfbridge HVIC chip, a 1channel HVIC chip, a lead frame, bonding wires, and a plastic packaging material; The lead frame is welded to the upper surface of the IMS heat dissipation substrate; the MOS / IGBT chip and the FRD chip are welded to the upper end of the IMS heat dissipation substrate; the Halfbridge HVIC chip and the 1channel HVIC chip are bonded to the upper end of the IMS heat dissipation substrate; the bonding pad of the 1channel HVIC chip is directly bonded to the gate bonding pad of the MOS / IGBT chip through a bonding wire; The Halfbridge HVIC chip is connected to the 1channel HVIC chip via bonding wires, and the bonding pads of the Halfbridge HVIC chip and the 1channel HVIC chip are bonded to the IMS substrate; a part of the lead frame, the IMS heat dissipation substrate, the MOS / IGBT chip, the FRD chip, the Halfbridge HVIC chip, the 1channel HVIC chip and the bonding wires are wrapped with plastic packaging materials to form protection.

2. The intelligent power module according to claim 1, characterized in that: The MOS / IGBT chip, FRD chip, Halfbridge HVIC chip, and 1channel HVIC chip are all electronic components; the IMS heat dissipation substrate, lead frame, and bonding wires are all connectors.

3. A system circuit of an intelligent power module, characterized in that: The intelligent power module applied to any one of claims 1-2 comprises a half-bridge IPM system, wherein the half-bridge IPM system consists of a half-bridge high-voltage drive system, a single-channel high-voltage drive system, two power MOS / IGBT chips, and two FRD chips; the high-voltage area power supply VB and the high-voltage area ground VS of the half-bridge high-voltage drive system are connected to the low-voltage area power supply VCC2 and the low-voltage area ground VSS2 of the single-channel high-voltage drive system, the high-side output HO of the half-bridge high-voltage drive system is connected to the input IN of the single-channel high-voltage drive system, and the MOS / IGBT chip is driven by the output HO2 of the single-channel high-voltage drive system; and a 1200V MOS / IGBT chip is driven by superimposing a 600V Halfbridge HVIC chip and a 600V 1channel HVIC chip.

4. The system circuit of the intelligent power module according to claim 3, characterized in that: The half-bridge high-voltage drive system comprises an input Schmitt circuit, a filter circuit, a level shift circuit, a dead zone interlock circuit, a pulse generating circuit, a 600V high-side drive circuit (in the high-voltage area), a high-side filter circuit (in the high-voltage area), a low-side delay circuit, a low-side drive circuit, an ITRIP (current trigger) circuit, a temperature detection circuit, a FAULT logic and an output circuit. The half-bridge high-voltage drive system integrates drive and over-current protection, under-voltage protection, and over-temperature protection functions; Overcurrent protection: A sampling resistor is set between the power device of the peripheral circuit and GND. When the current passing through the sampling resistor increases, the voltage at both ends will also increase; ITRIP detects the voltage of the sampling resistor to GND. There is a comparator inside ITRIP. When the voltage detected by ITRIP exceeds the threshold of the comparator, the comparator will reverse. The reverse signal is processed by the logic circuit to shut off the signal of the entire circuit, so that the output of the driver IC is not controlled by the input and directly outputs a low level, thereby shutting off the current of the driven power device; Over-temperature protection: In the temperature detection circuit, the internal voltage changes linearly with the temperature. When the temperature is higher than a certain point, the internal node voltage will also be higher than a certain voltage threshold. Similarly, through the comparator, when the detected voltage exceeds the threshold of the comparator, the comparator will reverse. The inversion signal is processed by the logic circuit to shut down the signal of the entire circuit, so that the output of the driver IC is not controlled by the input and directly outputs a low level, thereby shutting down the current of the driven power device; Undervoltage protection: The half-bridge high-voltage drive system is internally provided with a circuit for collecting the VCC voltage. The collected voltage enters the internal comparator through voltage division. Similarly, the reference voltage of the comparator can be set, so that the voltage value of the undervoltage protection can be set; at the same time, the VCC voltage divider circuit will change the voltage divider value according to the working state (normal working state, undervoltage protection state), so that the point at which the circuit resumes normal operation after the undervoltage protection is adjusted when the VCC voltage returns to normal.

5. The intelligent power module according to claim 3, characterized in that: The single-channel high-voltage drive system includes an input Schmitt circuit, a filter circuit, a level shift circuit, a pulse generating circuit, a 600V high-side drive circuit (within the high-voltage area) and a high-side filter circuit (within the high-voltage area). The single-channel high-voltage drive system only needs to have a driving function.

6. A packaging method for an intelligent power module, characterized in that: Manufacturing the intelligent filtering module according to any one of claims 1 to 2 comprises the following steps: S1. First, a copper wiring layer is set on the IMS heat dissipation substrate, and then a MOS / IGBT chip, an FRD chip, a HalfbridgeHVIC chip, and a 1channel HVIC chip are assembled on the IMS heat dissipation substrate to form a circuit connection with the copper wiring layer; S2. The copper wiring layer under the Halfbridge HVIC chip, 1channel HVIC chip, and MOS / IGBT chip must be isolated, and the isolation voltage must be at least 1200V; S3, attaching the Halfbridge HVIC chip, the 1channel HVIC chip, the MOS / IGBT chip, and the FRD chip to the chip pads of the wiring layer by welding, and attaching the lead frame to the pin pads of the wiring layer by welding; S4, bonding the wire bonding points of the Halfbridge HVIC chip, the 1channel HVIC chip, the MOS / IGBT chip, and the FRD chip to the wire bonding points of the wiring layer, as well as the bonding points between the chips, using aluminum bonding wires; S5. Finally, wrap all chips, IMS heat dissipation substrates and part of the pin frame in plastic packaging materials to form physical protection.

7. The intelligent power module according to claim 1, characterized in that: The plastic encapsulation material on the IMS heat dissipation substrate side is very thin, and the heat is dissipated through the heat sink added on this side; a certain creepage distance is maintained between the lead frame and the heat sink to ensure that the withstand voltage between the lead and the heat sink is above 1200V.

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