Radio frequency receiving module and electronic equipment

Abstract

The invention provides a radio frequency receiving module and electronic equipment. The radio frequency receiving module comprises a substrate; the filter is arranged on one side of the substrate and comprises a piezoelectric material; the field effect transistor is arranged on the other side of the substrate and comprises an active region; and the first conductive column extends from the active region to the piezoelectric material along the direction vertical to the substrate so as to realize the electric connection between the field effect transistor and the filter. Therefore, the radio frequency receiving module has the beneficial effects of high systematization integration level, small occupied area of the substrate, low packaging cost, high product yield, good heat dissipation performance and the like.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a radio frequency receiving module and electronic equipment. Background Art

[0002] This section is intended to provide a background or context to the embodiments of the present application that are recited in the claims. Nothing herein is admitted to be prior art by virtue of its inclusion in this section.

[0003] Since the beginning of the 21st century, society has entered the era of ultra-rapid information development. Global data traffic has experienced explosive growth, and radio frequency communication technology has been widely adopted. The mainstream receive front-end architecture consists of a switch, a surface acoustic wave (SAW) filter, and a low-noise amplifier (LNA). The discrete LNA, switch, and SAW filter are packaged in a multi-chip module (MCM). Current packaging structures present the following challenges: 1. The individual components cannot overlap, resulting in a large substrate footprint and hindering system miniaturization; 2. High packaging costs; 3. Assembly requires debugging, impacting product yield; and 4. It hinders system multi-functionality.

[0004] In the prior art, patented technology with patent number CN117894769A discloses a chip and MEMS device, which integrates an active amplifier and a filter, that is, discloses a transmitting module structure; on the one hand, the chip structure disclosed in the patented technology does not have a radio frequency receiving function, and on the other hand, the chip structure disclosed in the patented technology has high DC power consumption and noise figure; patented technology with patent number CN105609499A proposes a GAN integrated device that integrates SAW on the front of the GAN. On the one hand, the device structure disclosed in the patented technology has low heat dissipation efficiency and a large substrate area. On the other hand, the device structure disclosed in the patented technology has higher DC power consumption, a larger noise figure and higher cost. On the other hand, its device structure will lead to large signal transmission loss, weak thermal conductivity and low reliability.

[0005] Therefore, there is an urgent need to propose a radio frequency receiving module and electronic equipment that can solve the above technical problems. Summary of the Invention

[0006] Various aspects of the present application provide a radio frequency receiving module and electronic equipment to achieve the goal of improving module miniaturization, reducing packaging costs, improving product yield and reliability, and realizing system multifunctionality.

[0007] In one aspect of the present application, a radio frequency receiving module is provided, comprising:

[0008] substrate;

[0009] a filter, disposed on one side of the substrate, comprising a piezoelectric material;

[0010] a field effect transistor, disposed on the other side of the substrate, comprising an active region;

[0011] A conductive column extends from the active area to the piezoelectric material in a direction perpendicular to the substrate to achieve electrical connection between the field effect transistor and the filter.

[0012] Furthermore, the radio frequency receiving module further includes: a first isolation layer formed on the periphery of the conductive column.

[0013] Furthermore, the RF receiving module further includes: the RF receiving module further includes: a second isolation layer, extending from the active area to the substrate in a direction perpendicular to the substrate and formed on the periphery of the active area and the substrate.

[0014] Furthermore, the radio frequency receiving module further includes: a third isolation layer formed between the substrate and the piezoelectric material.

[0015] Furthermore, the active region includes: a buffer layer formed on the other side of the substrate; an InGaAs layer formed on the side of the buffer layer facing away from the substrate; an nAlGaAs layer formed on the side of the InGaAs layer facing away from the substrate; a first n+GaAs cap layer and a second n+GaAs cap layer, both formed on the side of the nAlGaAs layer facing away from the substrate;

[0016] Furthermore, the RF receiving module also includes: a gate, which is arranged on the side of the n AI GaAs layer away from the substrate and is located between the first n+GaAs cap layer and the second n+GaAs cap layer; a source, which is arranged on the side of the first n+GaAs cap layer away from the substrate; and a drain, which is arranged on the side of the second n+GaAs cap layer away from the substrate.

[0017] Furthermore, the active area includes: a first insulating layer formed on a side of the nAlGaAs layer facing away from the substrate and located between the gate and a first structure, the first structure including a first n+GaAs cap layer and the source; a second insulating layer formed on a side of the nAlGaAs layer facing away from the substrate and located between the gate and a second structure, the second structure including a second n+GaAs cap layer and the drain.

[0018] Furthermore, the field effect transistor also includes: a first through-hole layer, formed on the side of the active area facing away from the substrate; a first conductive layer, formed on the side of the first through-hole layer facing away from the substrate; a second through-hole layer, formed on the side of the first conductive layer facing away from the substrate; and a second conductive layer, formed on the side of the second through-hole layer facing away from the substrate.

[0019] Furthermore, the filter further includes an interdigital transducer formed on a side of the piezoelectric material facing away from the substrate.

[0020] Furthermore, the radio frequency receiving module further includes: a bump layer formed on a side of the field effect transistor facing away from the substrate; and a base plate formed on a side of the bump layer facing away from the substrate.

[0021] Another aspect of the present application provides an electronic device, wherein the electronic device includes the radio frequency receiving module as described above.

[0022] The present invention has at least the following advantages or beneficial effects:

[0023] In the solution provided in the embodiment of the present application, the RF receiving module includes a substrate; a filter, disposed on one side of the substrate and comprising a piezoelectric material; a field effect transistor, disposed on the other side of the substrate and comprising an active area; and a conductive column, extending from the active area to the piezoelectric material in a direction perpendicular to the substrate to achieve electrical connection between the field effect transistor and the filter. The RF receiving module described in the present application integrates the field effect transistor and the filter package on both sides of the substrate, thereby reducing the occupied area of ​​the substrate, improving the miniaturization of the module and the system, and simplifying the assembly and debugging process. By providing the conductive column to achieve electrical connection between the filter and the field effect transistor, the signal transmission loss of the module is reduced, the heat dissipation efficiency of the module is improved, and the reliability of the module as a whole is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, a brief introduction will be given below to the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0025] Other features, objects and advantages of the present application will become more apparent upon reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0026] Figure 1 A schematic diagram of the structure of a radio frequency receiving module provided in one embodiment of the present application;

[0027] Figure 2 This is a functional block diagram of a radio frequency receiving module provided in one embodiment of the present application;

[0028] The same or similar reference numerals in the drawings represent the same or similar components.

[0029] Reference numerals:

[0030] 10: filter; 101: piezoelectric material; 102: interdigital transducer; 20: field-effect transistor; 201: substrate; 202: buffer layer; 203: In GaAs layer; 204: n AI GaAs layer; 205: first n+GaAs cap layer; 206: second n+GaAs cap layer; 207: first via layer; 208: first conductive layer; 209: second via layer; 210: second conductive layer; 211: source; 212: gate; 213: drain; 214: first insulating layer; 215: second insulating layer; 30: conductive pillar; 40: bump layer; 50: substrate; 601: second isolation layer; 602: third isolation layer; 603: first isolation layer. DETAILED DESCRIPTION

[0031] To make the purpose, technical solutions, and advantages of the embodiments of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0032] The technical solutions in the embodiments of the present invention will be described below in conjunction with the accompanying drawings in the embodiments of the present invention. In the description of the embodiments of the present invention, unless otherwise specified, "multiple" refers to two or more than two. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.

[0033] In addition, in order to facilitate the clear description of the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish between identical or similar items with substantially the same functions and effects. Those skilled in the art will understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit differences. At the same time, in the embodiments of the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design scheme described as "exemplary" or "for example" in the embodiments of the present invention should not be interpreted as being more preferred or advantageous than other embodiments or design schemes. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a concrete way for easy understanding.

[0034] The present application provides an electronic device, which may be a device including a radio frequency front-end module. The electronic device may include a laser device, a photoelectric detection device, a display device, a mobile phone, a tablet computer (pad), a smart wearable product (e.g., a smart watch, a smart bracelet), a virtual reality (VR) device, an augmented reality (AR) device, or a household appliance. The present application does not impose any particular restrictions on the specific form of the electronic device.

[0035] Example 1

[0036] The present invention provides a schematic diagram of a structure of a radio frequency receiving module, such as Figure 1 As shown, the radio frequency receiving module includes:

[0037] substrate 201;

[0038] The filter 10 is provided on one side of the substrate 201 and includes a piezoelectric material 101;

[0039] The field effect transistor 20 is disposed on the other side of the substrate 201 and includes an active region;

[0040] The conductive pillar 30 extends from the active area to the piezoelectric material 101 in a direction perpendicular to the substrate 201 to achieve electrical connection between the field effect transistor 20 and the filter 10 .

[0041] The present invention electrically connects the filter 10 and the field-effect transistor 20 through an electrical interconnection method (English: Through Wafer Via; abbreviated: TWV), which has the beneficial effects of low signal transmission loss, strong thermal conductivity and high reliability. In addition, the present invention isolates the filter 10 and the field-effect transistor 20 through the substrate 201, reducing the electrical interference between the filter 10 and the field-effect transistor 20. By realizing the integrated integration of the switch, filter and low-noise amplifier, the performance of the entire system is improved. Among them, the functional block diagram of the RF receiving module is shown as follows: Figure 2 shown.

[0042] In one embodiment, the field effect transistor 20 of the present application is manufactured by a pHEMT process.

[0043] In one embodiment, the field effect transistor 20 of the present application is a pseudo modulation doped heterojunction field effect transistor.

[0044] In one embodiment, the substrate 201 is made of gallium arsenide (GaAs). The present application does not limit the preparation method of the substrate 201, including but not limited to liquid encapsulation Czochralski (LEC), horizontal Bridgman (HB), vertical Bridgman (VB), or vertical gradient freezing (VGF).

[0045] In one embodiment, in order to ensure that the conductive column 30 can pass through the active area of ​​the field effect transistor 20 without short circuiting, and further reduce the coupling of the interference signal, thereby improving the sensitivity of the RF receiving module, the RF receiving module also includes: a first isolation layer 603, formed on the periphery of the conductive column 30.

[0046] In one embodiment, in order to further reduce the electrical interference between the filter 10 and the field-effect transistor 20 and improve the stability and linearity of the RF receiving module, the RF receiving module also includes: a second isolation layer 601, extending from the active area to the substrate 201 in a direction perpendicular to the substrate 201 and formed on the periphery of the active area and the substrate 201; and a third isolation layer 602, formed between the substrate 201 and the piezoelectric material 101.

[0047] In one embodiment, the active region includes: a buffer layer 202 formed on the other side of the substrate 201; an In GaAs layer 203 formed on the side of the buffer layer 202 facing away from the substrate 201; an n AI GaAs layer 204 formed on the side of the In GaAs layer 203 facing away from the substrate 201; a first n+GaAs cap layer 205 and a second n+GaAs cap layer 206, both formed on the side of the n AI GaAs layer 204 facing away from the substrate 201.

[0048] In order to ensure that the switch included in the RF receiving module has the advantages of low DC power consumption, low insertion loss, and high breakdown voltage, the present application adopts a pHEMT process to prepare the gate 212, source 211, and drain 213. Among them, the gate 212 is arranged on the side of the n Al GaAs layer 204 facing away from the substrate 201, and is located between the first n+ GaAs cap layer 205 and the second n+ GaAs cap layer 206; the source 211 is arranged on the side of the first n+ GaAs cap layer 205 facing away from the substrate 201; and the drain 213 is arranged on the side of the second n+ GaAs cap layer 206 facing away from the substrate 201.

[0049] In one embodiment, the gate 212, source 211 and drain 213 form a switch and a low noise amplifier; it should be noted that Figure 1 This is just a simplified schematic diagram. Although only one transistor is drawn in area 20, in fact, there will be multiple interconnected transistors in the active area to form a switch and a low noise amplifier.

[0050] It should be understood that the switch and low-noise amplifier described in this application are both manufactured using pHEMT. Since the manufacturing processes of the two are consistent, they can share a common mask, which has the beneficial effect of reducing wafer production costs.

[0051] In one embodiment, the active area further includes: a first insulating layer 214, formed on a side of the n AI GaAs layer 204 facing away from the substrate 201, located between the gate 212 and the first structure, the first structure including a first n+ GaAs cap layer 205 and the source 211; a second insulating layer 215, formed on a side of the n AI GaAs layer 204 facing away from the substrate 201, located between the gate 212 and the second structure, the second structure including a second n+ GaAs cap layer 206 and the drain 213.

[0052] In one embodiment, the field effect transistor 20 further includes: a first through-hole layer 207, formed on the side of the active area facing away from the substrate 201; a first conductive layer 208, formed on the side of the first through-hole layer 207 facing away from the substrate 201; a second through-hole layer 209, formed on the side of the first conductive layer 208 facing away from the substrate 201; and a second conductive layer 210, formed on the side of the second through-hole layer 209 facing away from the substrate 201.

[0053] In one embodiment, the first via layer 207 , the first conductive layer 208 , the second via layer 209 , and the second conductive layer 210 form a 3D interconnect structure.

[0054] In one embodiment, the filter 10 further includes an interdigital transducer 102 formed on a side of the piezoelectric material 101 facing away from the substrate 201 .

[0055] In one embodiment, the RF receiving module further includes: a bump layer 40 formed on a side of the field effect transistor 20 facing away from the substrate 201 ; and a base plate 50 formed on a side of the bump layer 40 facing away from the substrate 201 .

[0056] Specifically, the present application does not limit the material of the substrate 50. The material of the substrate 50 may include single crystal silicon (Si), single crystal germanium (Ge), gallium arsenide, indium phosphide, III-V compound semiconductor materials, II-VI compound semiconductor materials or at least one of other semiconductor materials known in the art, or may also be made of non-conductive materials such as glass, plastic or sapphire wafers.

[0057] Example 2

[0058] An embodiment of the present application further provides an electronic device, which includes the radio frequency receiving module as described in the first embodiment.

[0059] For example, the electronic device may include a laser device, a photoelectric detection device, a display device, a mobile phone, a tablet computer (pad), a smart wearable product (e.g., a smart watch, a smart bracelet), a virtual reality (VR) device, an augmented reality (AR) device, or a household appliance. The embodiments of the present application do not impose any particular restrictions on the specific form of the above-mentioned electronic devices.

[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

[0061] Furthermore, it is clear that the word "comprising" does not exclude other units or steps, and the singular does not exclude the plural. Multiple units or devices recited in a device claim may also be implemented by a single unit or device through software or hardware. Terms such as "first" and "second" are used to indicate names and do not imply any particular order.

Claims

1. A radio frequency receiving module, wherein: The radio frequency receiving module comprises: substrate; A filter, disposed on one side of the substrate, comprising a piezoelectric material; A field effect transistor, disposed on the other side of the substrate, comprising an active region; A conductive column extends from the active area to the piezoelectric material in a direction perpendicular to the substrate to achieve electrical connection between the field effect transistor and the filter.

2. The RF receiving module according to claim 1, wherein: The radio frequency receiving module also includes: The first isolation layer is formed on the periphery of the conductive column.

3. The RF receiving module according to claim 1 or 2, wherein: The radio frequency receiving module also includes: The second isolation layer extends from the active area to the substrate along a direction perpendicular to the substrate and is formed at the periphery of the active area and the substrate.

4. The RF receiving module according to claim 3, wherein: The radio frequency receiving module also includes: A third isolation layer is formed between the substrate and the piezoelectric material.

5. The radio frequency receiving module according to claim 4, wherein: The active region comprises: a buffer layer formed on the other side of the substrate; An In GaAs layer is formed on a side of the buffer layer away from the substrate; n Al GaAs layer, formed on a side of the In GaAs layer facing away from the substrate; The first n+GaAs cap layer and the second n+GaAs cap layer are both formed on a side of the nAlGaAs layer away from the substrate.

6. The radio frequency receiving module according to claim 5, wherein: The radio frequency receiving module also includes: A gate is arranged on a side of the nAlGaAs layer away from the substrate and between the first n+GaAs cap layer and the second n+GaAs cap layer; A source electrode is arranged on a side of the first n+GaAs cap layer away from the substrate; The drain is arranged on a side of the second n+GaAs cap layer away from the substrate.

7. The radio frequency receiving module according to claim 6, wherein: The active region comprises: A first insulating layer is formed on a side of the nAl GaAs layer away from the substrate and located between the gate and a first structure, wherein the first structure includes a first n+GaAs cap layer and the source; A second insulating layer is formed on a side of the nAl GaAs layer away from the substrate and located between the gate and a second structure, wherein the second structure includes a second n+GaAs cap layer and the drain.

8. The radio frequency receiving module according to claim 7, wherein: The field effect transistor further comprises: A first through-hole layer is formed on a side of the active area away from the substrate; A first conductive layer is formed on a side of the first through hole layer facing away from the substrate; A second through-hole layer is formed on a side of the first conductive layer facing away from the substrate; The second conductive layer is formed on a side of the second through hole layer away from the substrate.

9. The radio frequency receiving module according to claim 8, wherein: The filter further comprises: An interdigital transducer is formed on a side of the piezoelectric material facing away from the substrate.

10. The radio frequency receiving module according to claim 9, wherein: The radio frequency receiving module also includes: A bump layer formed on a side of the field effect transistor facing away from the substrate; A base plate is formed on a side of the bump layer facing away from the substrate.

11. An electronic device, wherein: The electronic device comprises the radio frequency receiving module according to any one of claims 1 to 10.

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