Semiconductor device

Abstract

The semiconductor device includes at least one terminal including a conductive cylindrical holder and a metal pin inserted into the holder. In addition, the semiconductor device includes a terminal supporting body that supports the holder, and a sealing resin that covers a part of the holder and the terminal supporting body. The sealing resin has a resin main surface facing one side in the thickness direction. The bracket has a first surface located at an end on one side in the thickness direction, and a first outer surface extending in the thickness direction. The first surface is located at a position different from that of the resin main surface in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pins protrude further toward one side in the thickness direction than the resin main surface.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device. Background Art

[0002] In the past, semiconductor devices with power switching elements such as MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are known. Such semiconductor devices are installed in all electronic devices from industrial equipment to home appliances, information terminals, and automotive equipment. Patent document 1 discloses a previous semiconductor device (power module). The semiconductor device described in patent document 1 includes a semiconductor element and a supporting substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of Si (silicon). The supporting substrate supports the semiconductor element. The supporting substrate includes an insulating base material and a conductor layer stacked on both sides of the base material. The base material is, for example, made of ceramic. Each conductor layer is, for example, made of Cu (copper), and a semiconductor element is bonded to one of the conductor layers.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-190505 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In recent years, electronic devices have been required to be more energy-efficient, more performant, and more compact, etc. Therefore, there is a need to improve the performance and reduce the size of power modules mounted on electronic devices.

[0008] One object of the present disclosure is to provide a semiconductor device that is improved compared to the conventional semiconductor device. In particular, one object of the present disclosure is to provide a semiconductor device that is suitable for achieving improved performance and miniaturization in view of the above-mentioned circumstances.

[0009] The semiconductor device provided by the first scheme of the present disclosure comprises: at least one terminal, which includes a cylindrical bracket with conductivity and a metal pin inserted into the above-mentioned bracket; a terminal support body, which supports the above-mentioned bracket; and a sealing resin, which covers a portion of the above-mentioned bracket and the above-mentioned terminal support body, the above-mentioned sealing resin has a resin main surface facing one side in the thickness direction, the above-mentioned bracket has a first surface located at an end portion on one side in the above-mentioned thickness direction and a first outer side surface extending in the above-mentioned thickness direction, the above-mentioned first surface is located at a different position from the above-mentioned resin main surface in the above-mentioned thickness direction, the above-mentioned first outer side surface is connected to the above-mentioned sealing resin, and the above-mentioned metal pin protrudes further to one side in the above-mentioned thickness direction than the above-mentioned resin main surface.

[0010] The semiconductor device provided by the second scheme of the present disclosure comprises: a supporting substrate having a main surface facing one side in the thickness direction; at least one terminal, comprising a bracket arranged on the above-mentioned main surface and having conductivity, and a metal pin inserted into the above-mentioned bracket; and a sealing resin, having a resin main surface on one side in the above-mentioned thickness direction and covering at least a portion of the above-mentioned supporting substrate, wherein in at least any one of the above-mentioned at least one terminal, the entirety of the above-mentioned bracket is exposed from the above-mentioned sealing resin, and the above-mentioned metal pin protrudes further to one side in the above-mentioned thickness direction than the above-mentioned resin main surface.

[0011] Effects of the Invention

[0012] According to the above configuration, a structure which is preferable in terms of achieving performance improvement, miniaturization, etc. can be provided in a semiconductor device.

[0013] Other features and advantages of the present disclosure will become more apparent from the following detailed description with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.

[0015] Figure 2 It is a perspective view of main parts of the semiconductor device showing the first embodiment of the present disclosure.

[0016] Figure 3 It is a perspective view of main parts of the semiconductor device showing the first embodiment of the present disclosure.

[0017] Figure 4 It is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.

[0018] Figure 5 It is a plan view of a main part of a semiconductor device showing a first embodiment of the present disclosure.

[0019] Figure 6It is a side view of a main part of the semiconductor device showing the first embodiment of the present disclosure.

[0020] Figure 7 It is an enlarged plan view of a main part of the semiconductor device showing the first embodiment of the present disclosure.

[0021] Figure 8 It is a plan view of a main part of a semiconductor device showing a first embodiment of the present disclosure.

[0022] Fig. 9 It is a plan view of a main part of a semiconductor device showing a first embodiment of the present disclosure.

[0023] Fig.10 It is a side view showing the semiconductor device according to the first embodiment of the present disclosure.

[0024] Fig.11 It is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.

[0025] Fig.12 is along Figure 5 Cross-sectional view along line XII-XII.

[0026] Fig.13 is along Figure 5 Cross-sectional view along line XIII-XIII.

[0027] Fig.14 This is an enlarged cross-sectional view of a main part of the semiconductor device showing the first embodiment of the present disclosure.

[0028] Fig.15 This is an enlarged cross-sectional view of a main part of the semiconductor device showing the first embodiment of the present disclosure.

[0029] Fig.16 It is magnified Fig.13 A partial enlarged view of a part of .

[0030] Fig.17 It is magnified Figure 4 A partial enlarged view of a part of .

[0031] Fig.18 is along Figure 5 Cross-sectional view of line XVIII-XVIII.

[0032] Fig.19 is along Figure 5 Cross-sectional view of the XIX-XIX line.

[0033] Fig. 20 is along Figure 5 Cross-sectional view of the XX-XX line.

[0034] Fig.21 is along Figure 5 Cross-sectional view of line XXI-XXI.

[0035] Fig. 22 is along Figure 5 Cross-sectional view of line XXII-XXII.

[0036] Fig.23 A semiconductor device according to a first modification example of the first embodiment is shown in FIG. Fig.16 Magnified cross-sectional view of the same.

[0037] Fig.24 A semiconductor device according to a second modification example of the first embodiment is shown in FIG. Fig.16 Magnified cross-sectional view of the same.

[0038] Fig.25 A semiconductor device according to a third modification example of the first embodiment is shown. Fig.16 Magnified cross-sectional view of the same.

[0039] Fig.26 A semiconductor device according to a fourth modification of the first embodiment is shown. Fig.16 Magnified cross-sectional view of the same.

[0040] Fig. 27 A semiconductor device according to a fifth modification of the first embodiment is shown. Fig.16 Magnified cross-sectional view of the same.

[0041] Fig.28 It is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure.

[0042] Fig.29 A semiconductor device according to a second embodiment of the present disclosure is shown in FIG. Fig.16 Magnified cross-sectional view of the same.

[0043] Fig.30 It is a perspective view showing a semiconductor device according to a first embodiment of the second aspect of the present disclosure.

[0044] Fig.31 It is a plan view showing a semiconductor device according to a first embodiment of the second aspect of the present disclosure.

[0045] Fig.32 is Fig.31 The sealing resin is shown by imaginary lines in the top view.

[0046] Fig.33 is Fig.32 The sealing resin and the second conductive member are omitted in the top view.

[0047] Fig.34is Fig.33 The first conductive component is omitted in the top view.

[0048] Fig.35 It is a bottom view showing the semiconductor device according to the first embodiment of the second aspect of the present disclosure.

[0049] Fig.36 is along Fig.32 Cross-sectional view along line XXXVI-XXXVI.

[0050] Fig.37 It is magnified Fig.36 A partial enlarged cross-sectional view of a portion (near the first element).

[0051] Fig.38 It is magnified Fig.36 A partially enlarged cross-sectional view of a portion (near the second element).

[0052] Fig.39 is along Fig.32 Cross-sectional view of line XXXIX-XXXIX.

[0053] Fig.40 is along Fig.32 Cross-sectional view of the XL-XL line.

[0054] Fig.41 is along Fig.32 Cross-sectional view of the XLI-XLI line.

[0055] Fig.42 is along Fig.32 Cross-sectional view of line XLII-XLII.

[0056] Fig.43 is along Fig.32 Cross-sectional view of line XLIII-XLIII.

[0057] Fig.44 It is magnified Fig.40 A partial enlarged cross-sectional view of a portion of .

[0058] Fig.45 It is a cross-sectional view showing one step of the method for manufacturing a semiconductor device according to the first embodiment of the second aspect of the present disclosure.

[0059] Fig.46 It is a plan view showing a semiconductor device according to a first modified example of the first embodiment of the second aspect.

[0060] Fig.47 is along Fig.46 Cross-sectional view of line XLVII-XLVII.

[0061] Fig.48 is along Fig.46 Cross-sectional view of line XLVIII-XLVIII.

[0062] Fig.49 A semiconductor device according to a second modification example of the first embodiment of the second aspect Fig.40 Same cross-section view.

[0063] Fig.50 A semiconductor device according to a third modified example of the first embodiment of the second aspect Fig.47 Same cross-section view.

[0064] Fig.51 A semiconductor device according to a fourth modified example of the first embodiment of the second aspect Fig.40 Same cross-section view.

[0065] Fig.52 It is a plan view showing a semiconductor device according to a fifth modified example of the first embodiment of the second aspect.

[0066] Fig.53 is along Fig.52 Cross-sectional view of the LIII-LIII line. DETAILED DESCRIPTION

[0067] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Figure 1 to Figure 29 , a semiconductor device according to the first embodiment of the present disclosure is described. Then, referring to Figure 30 to Figure 53 A semiconductor device according to the second embodiment of the present disclosure is described. Figure 1 to Figure 29 The reference symbols used in (the first solution) are the same as those in Figure 30 to Figure 53 The reference symbols used in the second embodiment are independent of each other. Therefore, for example, if the same reference symbol indicates different components in the first embodiment and the second embodiment, different reference symbols may indicate the same (or similar) components in the first embodiment and the second embodiment.

[0068] The terms “first”, “second”, “third”, etc. in the present disclosure are used only for identification, and are not intended to necessarily indicate the order of these objects.

[0069] In the present disclosure, “something A is formed on thing B” and “something A is formed on thing B”, unless otherwise specified, include “something A is directly formed on thing B” and “something else is interposed between thing A and thing B and thing A is formed on thing B”. Similarly, “something A is arranged on thing B” and “something A is arranged on thing B”, unless otherwise specified, include “something A is directly arranged on thing B” and “something else is interposed between thing A and thing B and thing A is arranged on thing B”. Similarly, “something A is located on thing B”, unless otherwise specified, includes “something A is in contact with thing B and thing A is located on thing B” and “something else is interposed between thing A and thing B and thing A is located on thing B”. In addition, “something A overlaps something B when viewed in a certain direction” includes “something A overlaps something B entirely” and “something A overlaps something B partially” unless otherwise specified. In addition, in the present disclosure, “some surface A faces (one side or the other side of) direction B” is not limited to the case where the angle of surface A relative to direction B is 90°, and includes the case where surface A is inclined relative to direction B.

[0070] First implementation method (first solution):

[0071] Figure 1 to Figure 22 A semiconductor device according to a first embodiment of the first scheme of the present disclosure is shown. The semiconductor device A1 of the present embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, a fourth terminal 44, a plurality of control terminals 45, a control terminal support 48, a first conductive component 5, a second conductive component 6, and a sealing resin 8.

[0072] Figure 1 It is a perspective view showing the semiconductor device A1. Figure 2 , Figure 3 It is a perspective view showing the main parts of the semiconductor device A1. Figure 4 It is a top view showing the semiconductor device A1. Figure 5 It is a plan view showing the main parts of the semiconductor device A1. Figure 6 It is a side view showing the main parts of the semiconductor device A1.

[0073] Figure 7 It is an enlarged plan view showing the main parts of the semiconductor device A1. Figure 8 , Fig. 9 It is a plan view showing the main parts of the semiconductor device A1. Fig.10 It is a side view showing the semiconductor device A1. Fig.11 It is a bottom view showing the semiconductor device A1. Fig.12 is along Figure 5Cross-sectional view along line XII-XII. Fig.13 is along Figure 5 Cross-sectional view along line XIII-XIII. Fig.14 , Fig.15 It is an enlarged cross-sectional view showing a main part of the semiconductor device A1. Fig.16 It is magnified Fig.13 A partial enlarged view of a part of . Fig.17 It is magnified Figure 4 A partial enlarged view of a part of . Fig.18 is along Figure 5 Cross-sectional view of line XVIII-XVIII. Fig.19 is along Figure 5 Cross-sectional view of the XIX-XIX line. Fig. 20 is along Figure 5 Cross-sectional view of the XX-XX line. Fig.21 is along Figure 5 Cross-sectional view of line XXI-XXI. Fig. 22 is along Figure 5 Cross-sectional view of line XXII-XXII.

[0074] For the sake of convenience, three mutually orthogonal directions are set as the x direction, the y direction, and the z direction. The z direction is an example of a thickness direction, and the x direction is an example of a first direction. In addition, one side of the x direction is called the x1 side of the x direction, and the other side of the x direction is called the x2 side of the x direction. In addition, one side of the y direction is called the y1 side of the y direction, and the other side of the y direction is called the y2 side of the y direction. In addition, one side of the z direction is called the z1 side of the z direction, and the other side of the z direction is called the z2 side of the z direction.

[0075] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B are electronic components that serve as the functional core of the semiconductor device A1. The constituent material of each first semiconductor element 10A and each second semiconductor element 10B is, for example, a semiconductor material based on SiC (silicon carbide). The semiconductor material is not limited to SiC, and may also be Si (silicon), GaN (gallium nitride) or C (diamond), etc. Each first semiconductor element 10A and each second semiconductor element 10B is, for example, a power semiconductor chip with a switching function such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In the present embodiment, the first semiconductor element 10A and the second semiconductor element 10B are shown as MOSFETs, but are not limited to this, and may also be other transistors such as IGBTs (Insulated Gate Bipolar Transistor). Each first semiconductor element 10A and each second semiconductor element 10B are the same element. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.

[0076] like Fig.14 , Fig.15 As shown, the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102. In each of the first semiconductor element 10A and each of the second semiconductor elements 10B, the element main surface 101 and the element back surface 102 are spaced apart in the z direction. The element main surface 101 faces the z1 side of the z direction, and the element back surface 102 faces the z2 side of the z direction.

[0077] In this embodiment, the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B, but the number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B are not limited to this structure and can be appropriately changed according to the performance required of the semiconductor device A1. Figure 8 , Fig. 9 In the example, four first semiconductor elements 10A and four second semiconductor elements 10B are respectively configured. The number of first semiconductor elements 10A and second semiconductor elements 10B may be two or three, or five or more. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be equal or different. The number of first semiconductor elements 10A and second semiconductor elements 10B is determined according to the current capacity handled by semiconductor device A1.

[0078] The semiconductor device A1 is configured as a half-bridge type switching circuit, for example. In this case, a plurality of first semiconductor elements 10A constitute an upper branch circuit of the semiconductor device A1, and a plurality of second semiconductor elements 10B constitute a lower branch circuit. In the upper branch circuit, a plurality of first semiconductor elements 10A are connected in parallel to each other, in the lower branch circuit, the first semiconductor elements 10A are connected in parallel to each other, and in the lower branch circuit, a plurality of second semiconductor elements 10B are connected in parallel to each other. Each first semiconductor element 10A is connected in series with each second semiconductor element 10B to form a bridge layer.

[0079] like Figure 8 , Fig. 9 as well as Fig.21 As shown in FIG. 1 and FIG. 2 , a plurality of first semiconductor elements 10A are mounted on first conductive portions 32A of a support substrate 3 described later. Figure 8 , Fig. 9 In the example shown, a plurality of first semiconductor elements 10A are arranged, for example, in the y direction and are spaced apart from each other. Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via a conductive bonding material 19. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the back surface 102 of the element faces the first conductive portion 32A. In addition, unlike the present embodiment, a plurality of first semiconductor elements 10A may also be mounted on a metal component that is different from a part of a DBC substrate or the like. In this case, the metal component is equivalent to the first conductive portion of the present disclosure. The metal component may also be supported on a DBC substrate or the like, for example.

[0080] like Figure 8 , Fig. 9 as well as Fig. 20 As shown in FIG. 1 and FIG. 2 , a plurality of second semiconductor elements 10B are mounted on second conductive portions 32B of a support substrate 3 described later. Figure 8 , Fig. 9 In the example shown, a plurality of second semiconductor elements 10B are arranged in the y direction and are spaced apart from each other. Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via the conductive bonding material 19. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the element back surface 102 faces the second conductive portion 32B. Fig. 9 As can be understood, when viewed in the x direction, the plurality of first semiconductor elements 10A overlap with the plurality of second semiconductor elements 10B, but they may not overlap. In addition, unlike the present embodiment, the plurality of second semiconductor elements 10B may be mounted on a metal component different from a part of the DBC substrate or the like. In this case, the metal component is equivalent to the second conductive portion in the present disclosure. The metal component may also be supported on the DBC substrate or the like, for example.

[0081] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B respectively have a first main surface electrode 11, a second main surface electrode 12, a third main surface electrode 13 and a back surface electrode 15. The structures of the first main surface electrode 11, the second main surface electrode 12, the third main surface electrode 13 and the back surface electrode 15 described below are common to each of the first semiconductor elements 10A and each of the second semiconductor elements 10B. The first main surface electrode 11, the second main surface electrode 12 and the third main surface electrode 13 are provided on the element main surface 101. The first main surface electrode 11, the second main surface electrode 12 and the third main surface electrode 13 are insulated by an insulating film not shown. The back surface electrode 15 is provided on the element back surface 102.

[0082] The first main surface electrode 11 is, for example, a gate electrode, and a driving signal (for example, a gate voltage) for driving the first semiconductor element 10A (the second semiconductor element 10B) is input. In the first semiconductor element 10A (the second semiconductor element 10B), the second main surface electrode 12 is, for example, a source electrode, and a source current flows. The second main surface electrode 12 of this embodiment has a gate finger 121. The gate finger 121 is, for example, composed of a linear insulator extending in the x direction, and divides the second main surface electrode 12 into two parts in the y direction. The third main surface electrode 13 is, for example, a source sensing electrode, and a source current flows. The back electrode 15 is, for example, a drain electrode, and a drain current flows. The back electrode 15 covers the entire area (or substantially the entire area) of the back surface 102 of the element. The back electrode 15 is, for example, formed by Ag (silver) plating.

[0083] If a driving signal (gate voltage) is input to the first main surface electrode 11 (gate electrode), each first semiconductor element 10A (each second semiconductor element 10B) switches between the on state and the off state according to the driving signal. In the on state, the current flows from the back electrode 15 (drain electrode) to the second main surface electrode 12 (source electrode), and in the off state, the current does not flow. That is, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching action. The semiconductor device A1 utilizes the switching function of the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B to convert the DC voltage input to a fourth terminal 44 and the two first terminals 41 and the second terminal 42 into an AC voltage, for example, and outputs the AC voltage from the third terminal 43. Each of the plurality of first semiconductor elements 10A described above is equivalent to the first switching element in the present disclosure. Each of the plurality of second semiconductor elements 10B described above is equivalent to the second switching element in the present disclosure.

[0084] In the semiconductor device A1, as Figure 5 , Figure 8 , Fig. 9As shown in FIG. 1 and FIG. 2 , the thermistor 17 is provided. The thermistor 17 is used as a temperature detection sensor. In addition, in addition to the thermistor 17, a temperature sensing diode or the like may be provided, or a thermistor 17 or the like may not be provided.

[0085] The support substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The specific structure of the support substrate 3 is not limited in any way, and is, for example, composed of a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a support conductor 32, and a back metal layer 33. The support conductor 32 includes a first conductive portion 32A and a second conductive portion 32B. The dimension of the support substrate 3 in the z direction is, for example, not less than 0.4 mm and not more than 3.0 mm.

[0086] The insulating layer 31 is, for example, a ceramic having excellent thermal conductivity. Such a ceramic includes, for example, SiN (silicon nitride). The insulating layer 31 is not limited to ceramics, and may also be an insulating resin sheet or the like. The insulating layer 31 is, for example, rectangular in plan view. The dimension of the insulating layer 31 in the z direction is, for example, not less than 0.05 mm and not more than 1.0 mm.

[0087] The first conductive portion 32A supports a plurality of first semiconductor elements 10A, and the second conductive portion 32B supports a plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface of the insulating layer 31 (the surface facing the z1 side of the z direction). The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). The constituent material may also include, for example, Al (aluminum) other than Cu (copper). The first conductive portion 32A and the second conductive portion 32B are spaced apart in the x direction. The first conductive portion 32A is located on the x1 side of the x direction relative to the second conductive portion 32B. The first conductive portion 32A and the second conductive portion 32B are each rectangular in shape, for example, when viewed from above. The first conductive portion 32A and the second conductive portion 32B, together with the first conductive component 5 and the second conductive component 6, constitute a path for the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.

[0088] The first conductive portion 32A has a first principal surface 301A. The first principal surface 301A is a plane facing the z1 side of the z direction. A plurality of first semiconductor elements 10A are bonded to the first principal surface 301A of the first conductive portion 32A via a conductive bonding material 19. The second conductive portion 32B has a second principal surface 301B. The second principal surface 301B is a plane facing the z1 side of the z direction. A plurality of second semiconductor elements 10B are bonded to the second principal surface 301B of the second conductive portion 32B via a conductive bonding material 19. The constituent material of the conductive bonding material 19 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. The dimensions of the first conductive portion 32A and the second conductive portion 32B in the z direction are, for example, greater than 0.1 mm and less than 1.5 mm.

[0089] The back metal layer 33 is formed on the lower surface of the insulating layer 31 (the surface facing the z2 side of the z direction). The constituent material of the back metal layer 33 is the same as the constituent material of the supporting conductor 32. The back metal layer 33 has a back surface 302. The back surface 302 is a plane facing the z2 side of the z direction. Fig.11 In the example shown, the back surface 302 is exposed from the sealing resin 8, for example. A heat dissipation component (for example, a heat sink) not shown in the figure can be mounted on the back surface 302. The back surface 302 may not be exposed from the sealing resin 8 but may be covered by the sealing resin 8. The back metal layer 33 overlaps both the first conductive portion 32A and the second conductive portion 32B in a plan view.

[0090] The first terminal 41, the second terminal 42, the third terminals 43, and the fourth terminal 44 are each formed of a plate-shaped metal plate. The metal plate contains, for example, Cu (copper) or a Cu (copper) alloy. Figure 1 to Figure 5 , Figure 8 , Fig. 9 as well as Fig.11 In the illustrated example, the semiconductor device A1 includes one each of the first terminal 41 , the second terminal 42 , and the fourth terminal 44 , and two third terminals 43 , but the number of each terminal is not limited at all.

[0091] A DC voltage to be the object of power conversion is input to the first terminal 41, the second terminal 42, and the fourth terminal 44. The fourth terminal 44 is a positive electrode (P terminal), and the first terminal 41 and the second terminal 42 are negative electrodes (N terminals). The AC voltage converted by the first semiconductor element 10A and the second semiconductor element 10B is output from the plurality of third terminals 43. The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 each include a portion covered by the sealing resin 8 and a portion exposed from the sealing resin 8.

[0092] like Fig.13As shown, the fourth terminal 44 is conductively bonded to the first conductive portion 32A. The conductive bonding method is not limited in any way, and may be appropriately adopted, such as ultrasonic bonding, laser bonding, welding, or a method using solder, metal paste, silver sintered body, etc. Figure 8 , Fig. 9 As shown in FIG. 1 , the fourth terminal 44 is located on the x1 side in the x direction relative to the plurality of first semiconductor elements 10A and the first conductive portion 32A. The fourth terminal 44 is electrically connected to the first conductive portion 32A and to the back surface electrode 15 (drain electrode) of each first semiconductor element 10A via the first conductive portion 32A.

[0093] The first terminal 41 and the second terminal 42 are electrically connected to the second conductive component 6. In the present embodiment, the first terminal 41 and the second conductive component 6 are formed integrally. The first terminal 41 and the second conductive component 6 are formed integrally, for example, by cutting and bending a single metal plate material, and do not include a bonding material for bonding them to each other. In addition, in the present embodiment, the second terminal 42 and the second conductive component 6 are formed integrally. In addition, the first terminal 41 and the second terminal 42 may be structures that are electrically connected to the second conductive component 6, or may be structures that have bonding portions that bond them to each other, unlike the present embodiment. Figure 5 , Figure 8 As shown in the figure, the first terminal 41 and the second terminal 42 are located on the x1 side of the x direction relative to the plurality of first semiconductor elements 10A and the first conductive portion 32A. The first terminal 41 and the second terminal 42 are respectively connected to the second conductive component 6, and are connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B through the second conductive component 6.

[0094] like Figure 1 to Figure 5 as well as Fig.11 As shown in the figures, the first terminal 41, the second terminal 42, and the fourth terminal 44 protrude from the sealing resin 8 to the x1 side in the x direction in the semiconductor device A1. The first terminal 41, the second terminal 42, and the fourth terminal 44 are spaced apart from each other. The first terminal 41 and the second terminal 42 are located on opposite sides of each other in the y direction with the fourth terminal 44 therebetween. The first terminal 41 is located on the y1 side in the y direction of the fourth terminal 44, and the second terminal 42 is located on the y2 side in the y direction of the fourth terminal 44. The first terminal 41, the second terminal 42, and the fourth terminal 44 overlap each other when viewed in the y direction.

[0095] As from Figure 8 , Fig. 9 as well as Fig.12As can be understood, the two third terminals 43 are respectively connected to the second conductive portion 32B. The connection method is not limited in any way, and ultrasonic bonding, laser bonding, welding, or a method using solder, metal paste, silver sintered body, etc. can be appropriately used. Figure 8 As shown in the figure, the two third terminals 43 are respectively located on the x2 side of the x direction relative to the plurality of second semiconductor elements 10B and the second conductive portion 32B. Each third terminal 43 is electrically connected to the second conductive portion 32B, and is electrically connected to the back electrode 15 (drain electrode) of each second semiconductor element 10B via the second conductive portion 32B. In addition, the number of the third terminals 43 is not limited to two, and for example, it can be one or more than three. For example, when there is one third terminal 43, it is desirable to connect it to the central portion of the second conductive portion 32B in the y direction.

[0096] The plurality of control terminals 45 are pin-shaped terminals for controlling the driving of each first semiconductor element 10A and each second semiconductor element 10B. The plurality of control terminals 45 are, for example, crimping terminals. The plurality of control terminals 45 include a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D. The plurality of first control terminals 46A to 46E are used for controlling each first semiconductor element 10A, etc. The plurality of second control terminals 47A to 47D are used for controlling each second semiconductor element 10B, etc.

[0097] like Figure 8 , Fig.13 as well as Fig. 22 As shown in FIG. 1 and FIG. 2 , a plurality of first control terminals 46A to 46E are arranged at intervals in the y direction. Each of the first control terminals 46A to 46E is supported by the first conductive portion 32A via a control terminal support body 48 (a first support portion 48A described later). Figure 5 as well as Figure 8 As shown, each of the first control terminals 46A to 46E is located between the plurality of first semiconductor elements 10A and the first terminal 41 , the second terminal 42 , and the fourth terminal 44 in the x direction.

[0098] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first semiconductor elements 10A. A drive signal (eg, a gate voltage is applied) for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A.

[0099] The first control terminal 46B is a terminal for detecting source signals of the plurality of first semiconductor elements 10A (source sensing terminal), and detects a voltage (voltage corresponding to a source current) applied from the first control terminal 46B to each second main surface electrode 12 (source electrode) of the plurality of first semiconductor elements 10A.

[0100] The first control terminal 46C and the first control terminal 46D are terminals that are electrically connected to the thermistor 17 .

[0101] The first control terminal 46E is a terminal (drain sense terminal) for detecting drain signals of the plurality of first semiconductor elements 10A, and detects a voltage (voltage corresponding to a drain current) applied from the first control terminal 46E to each back electrode 15 (drain electrode) of the plurality of first semiconductor elements 10A.

[0102] The plurality of second control terminals 47A to 47D are arranged at intervals in the y direction. Figure 8 as well as Fig.13 As shown in FIG. 1 and FIG. 2 , each of the second control terminals 47A to 47D is supported by the second conductive portion 32B via a control terminal support 48 (a second support portion 48B described later). Figure 5 as well as Figure 8 As shown, each of the second control terminals 47A to 47D is located between the plurality of second semiconductor elements 10B and the two third terminals 43 in the x direction.

[0103] The second control terminal 47A is a terminal (gate terminal) for inputting a drive signal to the plurality of second semiconductor elements 10B. A drive signal (e.g., a gate voltage) for driving the plurality of second semiconductor elements 10B is input to the second control terminal 47A. The second control terminal 47B is a terminal (source sensing terminal) for detecting a source signal of the plurality of second semiconductor elements 10B. The voltage (voltage corresponding to the source current) applied from the second control terminal 47B to each second main surface electrode 12 (source electrode) of the plurality of second semiconductor elements 10B is detected. The second control terminal 47C and the second control terminal 47D are terminals that are connected to the thermistor 17.

[0104] The plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47D) each include a bracket 451 and a metal pin 452 .

[0105] The bracket 451 is made of a conductive material. Fig.14 , Fig.15 As shown, the bracket 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via the conductive bonding material 459. Fig.16 As shown, the bracket 451 includes a cylindrical portion 453 , a first flange portion 454 and a second flange portion 455 .

[0106] The cylindrical portion 453 extends in the z direction and is, for example, cylindrical. The cylindrical portion 453 has a first outer side surface 453a and a first inner side surface 453b. The first outer side surface 453a is a surface facing radially outward of the cylindrical portion 453 when viewed in the z direction and extends in the z direction. The first inner side surface 453b faces the side opposite to the first outer side surface 453a, is a surface facing radially inward of the cylindrical portion 453 when viewed in the z direction, and extends in the z direction.

[0107] The first flange portion 454 is connected to the end portion of the tubular portion 453 on the z1 side in the z direction. The first flange portion 454 has a first surface 454a and a second surface 454b. The first surface 454a is a surface facing the z1 side in the z direction. The first surface 454a is located at the end portion of the z1 side in the z direction on the bracket 451. When viewed in the z direction, the first surface 454a is annular (circular or rectangular). The second surface 454b is located on the z2 side of the z direction relative to the first surface 454a, and is a surface facing the z2 side in the z direction.

[0108] The second flange portion 455 is connected to the end portion on the z2 side in the z direction of the cylindrical portion 453. In the present embodiment, the second flange portion 455 is bonded to the control terminal support body 48 (a first metal layer 482 described later) via a conductive bonding material 459.

[0109] The metal pin 452 is inserted through at least the first flange portion 454 and the cylindrical portion 453 of the bracket 451. A portion of the bracket 451 is covered with the sealing resin 8. At least the first outer side surface 453a (the cylindrical portion 453) is in contact with the sealing resin 8. Fig.16 In the illustrated example, the entirety of the first outer side surface 453 a of the cylindrical portion 453 and the second surface 454 b of the first flange portion 454 are in contact with the sealing resin 8 .

[0110] The metal pin 452 is a rod-shaped member extending in the z direction. The metal pin 452 is supported by being pressed into the bracket 451. The metal pin 452 is electrically connected to the control terminal support body 48 (the first metal layer 482 described later) at least via the bracket 451. Figure 14 to Figure 16 In the example shown, the metal pin 452 is not inserted into the lower end of the bracket 451 (the end on the z2 side in the z direction), and the lower end of the metal pin 452 is away from the conductive bonding material 459. In this case, the metal pin 452 is connected to the control terminal support body 48 (the first metal layer 482) via the bracket 451. Unlike the example shown in the figure, when the lower end of the metal pin 452 (the end on the z2 side in the z direction) is in contact with the conductive bonding material 459 in the insertion hole of the bracket 451, the metal pin 452 is connected to the control terminal support body 48 via the conductive bonding material 459. The metal pin 452 protrudes further to the z1 side in the z direction than the upper surface of the sealing resin 8 (the resin main surface 81 described later).

[0111] The control terminal support body 48 supports the plurality of control terminals 45. The control terminal support body 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the z direction.

[0112] The control terminal support body 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 32A and supports a plurality of first control terminals 46A to 46E among the plurality of control terminals 45. Fig.14 As shown, the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. The bonding material 49 may be conductive or insulating, such as solder. The second support portion 48B is disposed on the second conductive portion 32B and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. Fig.15 As shown, the second supporting portion 48B is bonded to the second conductive portion 32B via a bonding material 49 .

[0113] The control terminal support body 48 (the first support portion 48A and the second support portion 48B) is formed of, for example, a DBC (Direct Bonded Copper) substrate. The control terminal support body 48 includes an insulating layer 481, a first metal layer 482, and a second metal layer 483 which are stacked on each other.

[0114] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in a plan view.

[0115] like Fig.14 , Fig.15 As shown in FIG. 4 , the first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is vertically arranged on the first metal layer 482. The first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. Figure 8 As shown in FIG. 1 , the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, a fifth portion 482E, and a sixth portion 482F. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, the fifth portion 482E, and the sixth portion 482F are spaced apart and insulated from each other.

[0116] The first portion 482A is connected to a plurality of metal wires 71, and is electrically connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each metal wire 71. The first portion 482A and the sixth portion 482F are connected to a plurality of metal wires 73. Thus, the sixth portion 482F is electrically connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via the metal wires 73 and the metal wires 71. Figure 8 As shown, the first control terminal 46A is joined to the sixth portion 482F of the first support portion 48A, and the second control terminal 47A is joined to the sixth portion 482F of the second support portion 48B.

[0117] The second portion 482B is connected to a plurality of metal wires 72 and is electrically connected to the third main surface electrode 13 (source sensing electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each metal wire 72. Figure 8 As shown, the first control terminal 46B is joined to the second portion 482B of the first support portion 48A, and the second control terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0118] The third portion 482C and the fourth portion 482D are for thermistor 17 to be joined. Figure 8 As shown, the first control terminals 46C and 46D are joined to the third portion 482C and the fourth portion 482D of the first support portion 48A, and the second control terminals 47C and 47D are joined to the third portion 482C and the fourth portion 482D of the second support portion 48B.

[0119] The fifth portion 482E of the first supporting portion 48A is connected to the metal wire 74 and is electrically connected to the first conductive portion 32A via the metal wire 74. Figure 8 As shown, the first control terminal 46E is bonded to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the second support portion 48B is not electrically connected to other structural parts. The above-mentioned metal wires 71 to 74 are, for example, bonding wires. The constituent material of each metal wire 71 to 74 includes, for example, any one of Au (gold), Al (aluminum) or Cu (copper).

[0120] like Fig.14 , Fig.15 As shown in FIG. 4 , the second metal layer 483 is formed on the lower surface of the insulating layer 481. Fig.14 As shown, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 32A via the bonding material 49. Fig.15 As shown, the second metal layer 483 of the second support portion 48B is bonded to the second conductive portion 32B via the bonding material 49 .

[0121] The first conductive component 5 and the second conductive component 6 together with the first conductive portion 32A and the second conductive portion 32B constitute a path of the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The first conductive component 5 and the second conductive component 6 are spaced apart from the first main surface 301A and the second main surface 301B to the z1 side in the z direction, and overlap with the first main surface 301A and the second main surface 301B when viewed from above. In the present embodiment, the first conductive component 5 and the second conductive component 6 are respectively formed of a metal plate. The metal includes, for example, Cu (copper) or Cu (copper). Specifically, the first conductive component 5 and the second conductive component 6 are appropriately bent metal plates.

[0122] The first conductive component 5 is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive portion 32B, so that the second main surface electrode 12 of each first semiconductor element 10A and the second conductive portion 32B are conductively connected. The first conductive component 5 constitutes a path for the main circuit current switched by the plurality of first semiconductor elements 10A. Figure 7 as well as Figure 8 As shown, the first conductive component 5 includes a main portion 51 , a plurality of first bonding portions 52 , and a plurality of second bonding portions 53 .

[0123] The main portion 51 is located between the plurality of first semiconductor elements 10A and the second conductive portion 32B in the x direction and is a strip-shaped portion extending in the y direction when viewed from above. The main portion 51 overlaps both the first conductive portion 32A and the second conductive portion 32B in a plan view and is spaced from the first main surface 301A and the second main surface 301B toward the z1 side in the z direction. Fig.18 As shown in FIG. 1 , the main portion 51 is located on the z2 side in the z direction relative to a third path portion 66 and a fourth path portion 67 of a second conductive member 6 described later, and is closer to the first main surface 301A and the second main surface 301B than the third path portion 66 and the fourth path portion 67 .

[0124] In the present embodiment, the main portion 51 is arranged parallel to the first main surface 301A and the second main surface 301B.

[0125] like Figure 8 As shown in FIG. 1 and FIG. 2 , the main portion 51 extends continuously in the y direction corresponding to the region where the plurality of first semiconductor elements 10A are arranged. Figure 7 , Figure 8 , Fig.13As shown in the figures, a plurality of first openings 514 are formed in the main portion 51. The plurality of first openings 514 are through holes that penetrate in the z direction (the plate thickness direction of the main portion 51), for example. The plurality of first openings 514 are arranged at intervals in the y direction. The plurality of first openings 514 are respectively provided corresponding to the plurality of first semiconductor elements 10A. In the present embodiment, four first openings 514 are provided in the main portion 51, and the positions of these first openings 514 and the plurality of (four) first semiconductor elements 10A in the y direction are equal to each other.

[0126] In this embodiment, if Figure 8 , Fig.13 As shown in FIG. 1 and FIG. 2 , each first opening 514 overlaps with the gap between the first conductive portion 32A and the second conductive portion 32B in a plan view. The plurality of first openings 514 are formed to facilitate the flow of the resin material between the upper side (z1 side in the z direction) and the lower side (z2 side in the z direction) near the main portion 51 (first conductive member 5) when injecting a fluid resin material to form the sealing resin 8.

[0127] like Figure 8 As shown in FIG. 1 , a plurality of first bonding portions 52 and a plurality of second bonding portions 53 are respectively connected to the main portion 51 and are arranged corresponding to the plurality of first semiconductor elements 10A. Specifically, each first bonding portion 52 is located on the x1 side of the x direction relative to the main portion 51. Each second bonding portion 53 is located on the x2 side of the x direction relative to the main portion 51. Fig.14 As shown, each first bonding portion 52 is bonded to the second main surface electrode 12 of any corresponding first semiconductor element 10A via a conductive bonding material 59. Each second bonding portion 53 is bonded to the second conductive portion 32B via a conductive bonding material 59. The constituent material of the conductive bonding material 59 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. In the present embodiment, the first bonding portion 52 has two portions spaced apart in the y direction. The two portions are bonded to the second main surface electrode 12 on both sides of the y direction via the gate finger 121 of the second main surface electrode 12 of the first semiconductor element 10A.

[0128] The second conductive component 6 conducts the second main surface electrode 12 (source electrode) of each second semiconductor element 10B to the first terminal 41 and the second terminal 42. The second conductive component 6 is formed integrally with the first terminal 41 and the second terminal 42. The second conductive component 6 constitutes a path for the main circuit current switched by the plurality of second semiconductor elements 10B. Figure 5 to Figure 7 , Fig.12 , Fig.13 as well as Figure 18 to Figure 22As shown, the second conductive member 6 includes a plurality of third joint portions 61, a first path portion 64, a second path portion 65, a plurality of third path portions 66, and a fourth path portion 67. In the example shown, the second conductive member 6 includes a first step portion 602 and a second step portion 603.

[0129] The plurality of third bonding portions 61 are portions that are bonded to the plurality of second semiconductor elements 10B individually. Each third bonding portion 61 is bonded to the second main surface electrode 12 of each second semiconductor element 10B via a conductive bonding material 69. The constituent material of the conductive bonding material 69 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. In the present embodiment, the third bonding portion 61 has two flat portions 611 and two first inclined portions 612.

[0130] The two flat portions 611 are arranged in the y direction. The two flat portions 611 are spaced apart from each other in the y direction. The shape of the flat portion 611 is not limited in any way, and in the example shown in the figure, it is a rectangular shape. The two flat portions are bonded to the second main surface electrode 12 on both sides of the y direction via the gate finger 121 of the second main surface electrode 12 of the second semiconductor element 10B.

[0131] The two first inclined portions 612 are connected to the outer sides of the two flat portions 611 in the y direction. That is, the first inclined portion 612 located on the y1 side in the y direction is connected to the y1 side in the y direction relative to the flat portion 611 located on the y1 side in the y direction. In addition, the first inclined portion 612 located on the y2 side in the y direction is connected to the y2 side in the y direction relative to the flat portion 611 located on the y2 side in the y direction. The first inclined portion 612 is inclined so that the farther away from the flat portion 611 in the y direction, the closer it is to the z1 side in the z direction.

[0132] The first path portion 64 is interposed between the third bonding portions 61 and the first terminal 41. In the example shown in the figure, the first path portion 64 is connected to the first terminal 41 via the first step portion 602. The first path portion 64 overlaps the first conductive portion 32A in a plan view. The first path portion 64 is shaped to extend in the x direction as a whole.

[0133] The first path portion 64 includes a first strip portion 641 and a first extension portion 643. The first strip portion 641 is located on the X2 side of the x direction relative to the first terminal 41 and is substantially parallel to the first main surface 301A. The first strip portion 641 is shaped to extend in the x direction as a whole. In the example shown in the figure, the first strip portion 641 has a recess 649. The recess 649 is a portion of the first strip portion 641 that is recessed toward the y1 side of the y direction. Figure 5 , Figure 7 In the figure, the first conductive portion 32A is presented through the recess 649 .

[0134] The first extension portion 643 extends from the side end of the first strip-shaped portion 641 on the y1 side in the y direction to the z2 side in the z direction. The first extension portion 643 is spaced apart from the first conductive portion 32A. In the example shown in the figure, the first extension portion 643 is a shape along the z direction, and is a long rectangular shape with the x direction as the length direction. In addition, the first path portion 64 may also be a structure without the first extension portion 643.

[0135] The second path portion 65 is interposed between the third bonding portions 61 and the second terminal 42. In the example shown in the figure, the second path portion 65 is connected to the second terminal 42 via the second step portion 603. The second path portion 65 overlaps the first conductive portion 32A in a plan view. The second path portion 65 is shaped to extend in the x direction as a whole.

[0136] The second path portion 65 includes a second strip portion 651 and a second extension portion 653. The second strip portion 651 is located on the x2 side of the x direction relative to the second terminal 42 and is substantially parallel to the first main surface 301A. The second strip portion 651 is shaped to extend in the x direction as a whole. In the example shown in the figure, the second strip portion 651 has a recess 659. The recess 659 is a portion of the second strip portion 651 that is recessed toward the y2 side of the y direction. Figure 5 , Figure 7 In the figure, the first conductive portion 32A is presented by the recess 659 .

[0137] The second extension portion 653 extends from the side end of the second strip-shaped portion 651 on the y2 side in the y direction to the z2 side in the z direction. The second extension portion 653 is spaced apart from the first conductive portion 32A. The second extension portion 653 is the same as the first extension portion 643, and is a long rectangular shape along the z direction with the x direction as the length direction. In addition, the second path portion 65 may also be a structure without the second extension portion 653.

[0138] The plurality of third path portions 66 are individually connected to the plurality of third bonding portions 61. Each third path portion 66 is shaped to extend in the x direction and is arranged at intervals from each other in the y direction. The number of the plurality of third path portions 66 is not limited in any way, and in the example shown in the figure, five third path portions 66 are arranged. Each third path portion 66 is arranged in the y direction so as to be located between the plurality of second semiconductor elements 10B or to be located outside the plurality of second semiconductor elements 10B in the y direction.

[0139] A recess 669 is formed in two third path portions 66 located on both outer sides in the y direction. The recess 669 is recessed from the inner side to the outer side in the y direction. In the example shown in the figure, one recess 669 is formed in each of the two third path portions 66. Figure 5 , Figure 7 In the figure, the second conductive portion 32B is presented through these recesses 669 .

[0140] In the present embodiment, one third joint portion 61 is disposed between two third path portions 66 adjacent in the y direction. In one third joint portion 61, the first inclined portion 612 located on the y1 side in the y direction is connected to the third path portion 66 located on the y1 side in the y direction of the two third path portions 66 adjacent in the y direction. In one third joint portion 61, the first inclined portion 612 located on the y2 side in the y direction is connected to the third path portion 66 located on the y2 side in the y direction of the two third path portions 66 adjacent in the y direction.

[0141] The fourth path portion 67 is connected to the ends on the x1 side in the x direction of the plurality of third path portions 66. The fourth path portion 67 is a shape extending long in the y direction. The fourth path portion 67 is connected to the ends on the x2 side in the x direction of the first strip-shaped portion 641 of the first path portion 64 and the second strip-shaped portion 651 of the second path portion 65. In the example shown in the figure, the first path portion 64 is connected to the end on the y1 side in the y direction of the fourth path portion 67. In addition, the second path portion 65 is connected to the end on the y2 side in the y direction of the fourth path portion 67.

[0142] The sealing resin 8 covers the first semiconductor elements 10A, the second semiconductor elements 10B, the support substrate 3 (except the back surface 302), the first terminal 41, the second terminal 42, the third terminals 43, and the fourth terminal 44, the control terminals 45, the control terminal support 48, the first conductive component 5, the second conductive component 6, and the metal wires 71 to 74. The sealing resin 8 is made of, for example, black epoxy resin. The sealing resin 8 is formed by, for example, molding. The size of the sealing resin 8 in the x direction is, for example, about 35 mm to 60 mm, the size in the y direction is, for example, about 35 mm to 50 mm, and the size in the z direction is, for example, about 4 mm to 15 mm. These sizes are the sizes of the largest parts along each direction. The sealing resin 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831 to 834.

[0143] like Fig.10 , Fig.12 as well as Fig. 20 As shown in FIG. 1 , the resin main surface 81 and the resin back surface 82 are spaced apart in the z direction. The resin main surface 81 faces the z1 side of the z direction, and the resin back surface 82 faces the z2 side of the z direction. A plurality of control terminals 45 (a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D) protrude from the resin main surface 81. Fig.11As shown, the resin back surface 82 is a frame-shaped structure that surrounds the back surface 302 (the lower surface of the back metal layer 33) of the support substrate 3 when viewed from above. The back surface 302 of the support substrate 3 is exposed from the resin back surface 82, for example, on the same surface as the resin back surface 82. The plurality of resin side surfaces 831 to 834 are respectively connected to both the resin main surface 81 and the resin back surface 82, and are sandwiched by them in the z direction. Figure 4 As shown in FIG. 1 , the resin side surface 831 and the resin side surface 832 are spaced apart in the x direction. The resin side surface 831 faces the x2 side of the x direction, and the resin side surface 832 faces the x1 side of the x direction. The two third terminals 43 protrude from the resin side surface 831, and the first terminal 41, the second terminal 42, and the fourth terminal 44 protrude from the resin side surface 832. Figure 4 As shown in FIG. 8A and FIG. 8B , the resin side surface 833 and the resin side surface 834 are spaced apart in the y direction. The resin side surface 833 faces the y2 side in the y direction, and the resin side surface 834 faces the y1 side in the y direction.

[0144] In this embodiment, if Figure 1 , Figure 4 , Fig.13 , Fig. 22 As shown in FIG. 1 and FIG. 2 , a plurality of first recesses 810 are formed on the resin main surface 81 . The plurality of first recesses 810 are respectively recessed from the resin main surface 81 toward the z2 side in the z direction. The plurality of first recesses 810 are provided corresponding to the plurality of control terminals 45 , respectively.

[0145] like Fig.16 , Fig.17 As shown, the first recess 810 overlaps the entirety of the cylindrical portion 453 of the bracket 451 when viewed from above. In the example shown in the figure, the first recess 810 has a recess inner side surface 811 and a recess bottom surface 812. The recess inner side surface 811 is connected to the resin main surface 81 and extends to the z2 side of the z direction. In the example shown in the figure, the cross-section of the recess inner side surface 811 perpendicular to the z direction is circular. The recess bottom surface 812 is connected to the end of the recess inner side surface 811 on the z2 side of the z direction and is a plane facing the z1 side of the z direction.

[0146] The bottom surface 812 of the recess surrounds the first surface 454a of the bracket 451 (first flange portion 454) when viewed from above. In addition, the first surface 454a and the bottom surface 812 of the recess are in the same planar shape. Such a first recess 810 is formed by, for example, pushing the upper end (first flange portion 454) of the bracket 451 by a pin or the like having a shape corresponding to the first recess 810 while forming a trace of the sealing resin 8 through molding. In this way, the first recess 810 is a trace of molding, and the same applies to the first recess 810 in each of the modified examples described later. The first flange portion 454 is located on the z2 side in the z direction relative to the resin main surface 81. As Fig.16As shown, the first outer side surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 are all in contact with the sealing resin 8. On the other hand, the first inner side surface 453b of the cylindrical portion 453 and the first surface 454a of the first flange portion 454 are exposed from the sealing resin 8. Fig.16 , Fig.17 In the example shown, the first recessed portion 810 overlaps the entire first flange portion 454 when viewed from the z direction. Thus, the diameter (maximum value of the inner diameter) of the first recessed portion 810 is larger than the outer diameter of the first flange portion 454.

[0147] The first surface 454a, which is the same plane as the bottom surface 812 of the recess, is located at a different position from the resin main surface 81 in the z direction. Specifically, the first surface 454a is located on the z2 side of the z direction relative to the resin main surface 81. In the present embodiment, the distance between the resin main surface 81 and the first surface 454a in the z direction, i.e., the first dimension L1, is smaller than the length of the bracket 451 in the z direction, i.e., the second dimension L2. Preferably, the ratio of the distance between the resin main surface 81 and the first surface 454a in the z direction (the first dimension L1) to the length of the bracket 451 in the z direction (the second dimension L2) is 1 / 3 or more.

[0148] In addition, Fig.16 , Fig.17 In the example shown, the inner side surface 811 of the recess is formed in a cylindrical shape, but a draft angle in the molding process may also be provided. In the case where the inner side surface 811 of the recess is provided with a draft angle, the inner side surface 811 of the recess is formed in a conical shape inclined in such a manner that the inner diameter dimension decreases as it moves toward the z2 side in the z direction. The angle of the draft angle of the inner side surface 811 of the recess is appropriately set, for example, in the range of 0 to 30°. In addition, in the case where the inner side surface 811 of the recess is inclined in a conical shape, when the inclination angle is relatively large, the inner diameter dimension of the lower end of the inner side surface 811 of the recess (the end on the z2 side in the z direction) will be smaller than the outer diameter dimension of the first flange portion 454. In such a case, the above-mentioned recess bottom surface 812 is not formed. The lower end of the inner side surface 811 of the recess is in contact with the first surface 454a, forming the end edge of the recess.

[0149] like Figure 4 As shown, a plurality of recesses 832a are formed on the resin side surface 832. Each recess 832a is a portion that is recessed along the x direction when viewed from above. The plurality of recesses 832a have a portion formed between the first terminal 41 and the fourth terminal 44, and a portion formed between the second terminal 42 and the fourth terminal 44 when viewed from above. The plurality of recesses 832a are provided to increase the creepage distance between the first terminal 41 and the fourth terminal 44 along the resin side surface 832, and the creepage distance between the second terminal 42 and the fourth terminal 44 along the resin side surface 832.

[0150] like Figure 1 , Fig.12 as well as Fig.13 As shown in FIG. 1 , the sealing resin 8 has a plurality of protrusions 851. The plurality of protrusions 851 protrude from the resin main surface 81 to the z1 side in the z direction. The plurality of protrusions 851 are arranged near the four corners of the sealing resin 8 in a plan view. A protrusion end face 851a is formed at the front end (the end on the z1 side in the z direction) of each protrusion 851. Each protrusion end face 851a of the plurality of protrusions 851 is parallel (or substantially parallel) to the resin main surface 81 and is located on the same plane (x-y plane). Each protrusion 851 is, for example, a truncated cone with a bottom and a hollow interior. In a device using power generated by the semiconductor device A1, when the semiconductor device A1 is mounted on a control circuit substrate or the like of the device, the plurality of protrusions 851 are used as spacers. The plurality of protrusions 851 each have a recess 851b and an inner wall surface 851c formed in the recess 851b. The shape of each protrusion 851 may be a columnar shape, preferably a cylindrical shape. The shape of the recessed portion 851b is cylindrical, and preferably, the inner wall surface 851c is a single perfect circle when viewed from above.

[0151] The semiconductor device A1 may be mechanically fixed to a control circuit board or the like by screw fixing or the like. In this case, internal thread teeth may be formed on the inner wall surface 851c of the recessed portion 851b in the plurality of protrusions 851. An embedded nut may also be embedded in the recessed portion 851b in the plurality of protrusions 851.

[0152] Next, the operation of this embodiment will be described.

[0153] The bracket 451 constituting each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer side surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side in the z direction than the resin main surface 81. According to such a structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A1 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to such a structure, in adjacent control terminals 45, the creepage distance along the surface (resin main surface 81, etc.) of the sealing resin 8 can be increased. Therefore, the semiconductor device A1 is suitable for achieving miniaturization when viewed from above and improving the withstand voltage of adjacent control terminals 45.

[0154] The bracket 451 includes a cylindrical portion 453 extending in the z direction, and a first flange portion 454 connected to the end of the cylindrical portion 453 on the z1 side in the z direction. The first flange portion 454 has a first surface 454a facing the z1 side in the z direction. The sealing resin 8 has a first recess 810. The first recess 810 is recessed from the resin main surface 81 to the z1 side in the z direction. The first flange portion 454 is located on the z2 side in the z direction relative to the resin main surface 81. According to the structure in which the sealing resin 8 has the above-mentioned first recess 810, the first surface 454a (first flange portion 454) can be appropriately arranged at a position different from the resin main surface 81 in the z direction.

[0155] In addition, the first recess 810 overlaps the entire cylindrical portion 453 when viewed from above (when viewed in the z direction). Therefore, when the metal pin 452 is pressed into the bracket 451, the lower end of the metal pin 452 can be inserted into the bracket 451 (cylindrical portion 453) while entering the first recess 810, and the workability during the press-in is excellent.

[0156] The first recess 810 has a recess inner side surface 811 and a recess bottom surface 812. The recess bottom surface 812 faces the z1 side of the z direction and surrounds the first surface 454a when viewed in the z direction. In addition, the entire first surface 454a is exposed from the sealing resin 8. According to such a structure, when viewed from above, the first surface 454a (first flange portion 454) surrounded by the recess bottom surface 812 has excellent visual recognition. As a result, the operability when the metal pin 452 is pressed into the bracket 451 is further improved. In addition, according to the structure in which the recess bottom surface 812 of the first recess 810 surrounds the first surface 454a (first flange portion 454) when viewed from above, in the adjacent control terminal 45, the surface distance along the surface of the sealing resin 8 can be further increased. This is more preferred in terms of improving the withstand voltage of the adjacent control terminal 45.

[0157] The distance (first dimension L1) between the resin main surface 81 and the first surface 454a in the z direction is smaller than the length (second dimension L2) of the bracket 451 in the z direction. The ratio of the distance (first dimension L1) between the resin main surface 81 and the first surface 454a in the z direction to the length (second dimension L2) of the bracket 451 in the z direction is, for example, 50% or more. According to such a structure, the size of the sealing resin 8 in the z direction can be prevented from increasing, and the creepage distance along the surface of the sealing resin 8 can be increased in the adjacent control terminals 45.

[0158] A first variation of the first embodiment (first solution):

[0159] Fig.23 A semiconductor device according to a first modified example of the first embodiment is shown. Fig.23is an enlarged cross-sectional view showing a main part of the semiconductor device A11 of this modification example. Fig.16 In addition, Figure 23 to Figure 29 In the drawings, the same or similar elements as those of the semiconductor device A1 of the above embodiment are marked with the same reference numerals as those of the above embodiment, and the description thereof is omitted as appropriate. Figure 23 to Figure 29 The configurations of the various modifications and the various parts in the various embodiments can be appropriately combined with each other within the range that no technical contradiction occurs.

[0160] In the semiconductor device A11 of this variation, the structure of the first recess 810 is different from that of the semiconductor device A1 of the above-mentioned embodiment. In the semiconductor device A11, the first recess 810 has a recess edge 813 and a cylindrical inner side surface 814. The cylindrical inner side surface 814 is a cylindrical shape extending from the resin main surface 81 to the z2 side of the z direction. The recess edge 813 is located at the lower end (the end on the z2 side of the z direction) of the cylindrical inner side surface 814. The recess edge 813 is in contact with the first surface 454a. In this variation, the recess edge 813 is in contact with the radial middle position of the first surface 454a. A portion of the first surface 454a on the radial outside is covered by the sealing resin 8, and the remaining portion on the radial inside is exposed from the sealing resin 8. The outer peripheral edge of the first flange portion 454 surrounds the first recess 810 when viewed from above. Thus, the diameter (maximum value of the inner diameter) of the first recessed portion 810 is smaller than the outer diameter of the first flange portion 454. Fig.23 In the example shown, the cylindrical inner side surface 814 is formed in a cylindrical shape, but a draft angle may be provided on the cylindrical inner side surface 814. When the cylindrical inner side surface 814 is provided with a draft angle, the cylindrical inner side surface 814 is formed in a conical shape inclined so that the inner diameter dimension decreases toward the z2 side in the z direction.

[0161] In the semiconductor device A11 of this modified example, the bracket 451 constituting each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer side surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side in the z direction than the resin main surface 81. According to such a structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A11 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to such a structure, in adjacent control terminals 45, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased. Therefore, the semiconductor device A11 is suitable for achieving a reduction in size in a plan view and improving the withstand voltage of the adjacent control terminal 45. Otherwise, within the same structural range as the semiconductor device A1 of the above embodiment, the same operational effects as the above embodiment are achieved.

[0162] Second modification of the first embodiment (first solution):

[0163] Fig.24 A semiconductor device according to a second modified example of the first embodiment is shown. Fig.24 The enlarged cross-sectional view of the main part of the semiconductor device A12 of this modification is similar to Fig.16 The semiconductor device A12 of the present modification example is different from the semiconductor device A1 of the above-described embodiment in the structure of the first recess 810 .

[0164] The first recess 810 has a recess edge 813, a cylindrical inner side surface 814, and a tapered inner side surface 815. The cylindrical inner side surface 814 is cylindrical and extends from the resin main surface 81 to the z2 side of the z direction. The tapered inner side surface 815 is connected to the lower end (the end on the z2 side of the z direction) of the cylindrical inner side surface 814. The recess edge 813 is located at the lower end (the end on the z2 side of the z direction) of the tapered inner side surface 815. The tapered inner side surface 815 is inclined in a manner that the inner diameter dimension increases as it moves toward the z1 side of the z direction. The recess edge 813 is in contact with the first surface 454a. In this modified example, the recess edge 813 is in contact with the radial middle position of the first surface 454a. A portion of the first surface 454a on the radial outside is covered by the sealing resin 8, and the remaining portion on the radial inside is exposed from the sealing resin 8. The outer peripheral edge of the first flange portion 454 surrounds the first recessed portion 810 in a plan view.

[0165] In the semiconductor device A12 of this modified example, the bracket 451 constituting each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer side surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side in the z direction than the resin main surface 81. According to such a structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A12 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to such a structure, in adjacent control terminals 45, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased. Therefore, the semiconductor device A12 is suitable for achieving miniaturization in a plan view while improving the withstand voltage of the adjacent control terminal 45.

[0166] In the first recess 810, the recess end edge 813 located on the z2 side in the z direction is in contact with the first surface 454a of the first flange portion 454. In addition, the first recess 810 has a tapered inner side surface 815 connected to the recess end edge 813, and the inner diameter of the tapered inner side surface 815 increases as it moves toward the z1 side in the z direction. According to such a structure, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first recess 810 can be guided by the tapered inner side surface 815 while moving toward the bracket 451 (cylindrical portion 453). Therefore, the workability when pressing the metal pin 452 into the bracket 451 is improved. In addition, within the scope of the same structure as the semiconductor device A1 of the above embodiment, the same effects as the above embodiment are achieved.

[0167] Third modification of the first embodiment (first solution):

[0168] Fig.25 A semiconductor device according to a third modified example of the first embodiment is shown. Fig.25 is an enlarged cross-sectional view showing the main parts of the semiconductor device A13 of this modification example, Fig.16 The semiconductor device A13 of the present modification example is different from the semiconductor device A1 of the above-described embodiment in the structure of the first recess 810 .

[0169] The first recess 810 has a recess edge 813, a cylindrical inner side surface 814, and a tapered inner side surface 815. In this modification, the longitudinal cross-sectional shape of the cylindrical inner side surface 814 and the tapered inner side surface 815 is similar to Fig.24On the other hand, in this modification, the recessed portion edge 813 is in contact with the radially inner end of the first surface 454a. Thus, the entire (or substantially the entire) first surface 454a is covered with the sealing resin 8. The outer peripheral edge of the first flange portion 454 surrounds the first recessed portion 810 in a plan view.

[0170] In the semiconductor device A13 of this modified example, the bracket 451 constituting each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer side surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side in the z direction than the resin main surface 81. According to such a structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A13 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to such a structure, in adjacent control terminals 45, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased. Therefore, the semiconductor device A13 is suitable for achieving miniaturization in a plan view while improving the withstand voltage of the adjacent control terminal 45.

[0171] The concave end edge 813 located on the z2 side in the z direction in the first concave portion 810 is in contact with the first surface 454a of the first flange portion 454. The first concave portion 810 has a tapered inner side surface 815 connected to the concave end edge 813, and the inner diameter of the tapered inner side surface 815 increases as it moves toward the z1 side in the z direction. According to such a structure, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first concave portion 810 can be guided by the tapered inner side surface 815 while moving toward the bracket 451 (cylindrical portion 453). In addition, in this modified example, the concave end edge 813 is in contact with the radially inner square end of the first surface 454a. As a result, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first concave portion 810 can be reliably directed toward the bracket 451 (cylindrical portion 453). Therefore, the operability when the metal pin 452 is pressed into the bracket 451 is further improved. In addition to this, within the scope of the same structure as the semiconductor device A1 of the above embodiment, the same operational effects as those of the above embodiment are achieved.

[0172] Fourth Modification of the First Implementation Example (First Solution):

[0173] Fig.26 A semiconductor device according to a fourth modified example of the first embodiment is shown. Fig.26is an enlarged cross-sectional view showing the main parts of the semiconductor device A14 of this modification, which is similar to Fig.16 The semiconductor device A14 of the present modification example is different from the semiconductor device A1 of the above-described embodiment in the structure of the first recess 810 .

[0174] The first recess 810 has a recess inner side surface 811 and a recess bottom surface 812. Fig.26 In the example shown, the inner side surface 811 of the recess is formed into a conical shape that is inclined in such a manner that the inner diameter dimension decreases as it moves toward the z2 side of the z direction. The recess bottom surface 812 is connected to the end of the inner side surface 811 of the recess on the z2 side of the z direction, and is a plane facing the z1 side of the z direction. The recess bottom surface 812 surrounds the first surface 454a of the bracket 451 (first flange portion 454) when viewed from above. In this modified example, the recess bottom surface 812 is located on the z2 side of the z direction relative to the first surface 454a. Therefore, the first surface 454a and the recess bottom surface 812 are not the same plane, and the positions in the z direction are different. In addition, in Fig.26 In the illustrated example, the outer peripheral edge of the first flange portion 454 is exposed from the sealing resin 8 .

[0175] In the semiconductor device A14 of this variation, the bracket 451 constituting each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer side surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side in the z direction than the resin main surface 81. According to such a structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A14 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to such a structure, in adjacent control terminals 45, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased. Therefore, the semiconductor device A14 is suitable for achieving a reduction in size in a plan view and improving the withstand voltage of the adjacent control terminal 45. Otherwise, the semiconductor device A14 has the same structure as the semiconductor device A1 of the above embodiment and has the same effects as the above embodiment.

[0176] Fifth modification of the first embodiment (first embodiment):

[0177] Fig. 27 A semiconductor device according to a fifth modified example of the first embodiment is shown. Fig. 27 is an enlarged cross-sectional view showing the main parts of the semiconductor device A15 of this modification example, Fig.16The semiconductor device A15 of the present modification further includes a first resin filling portion 89 .

[0178] In this modification, the first resin filling portion 89 is filled in the first recess 810 in a manner of burying the first recess 810. The first resin filling portion 89 is made of epoxy resin, for example, like the sealing resin 8, but may also be a material different from the sealing resin 8. According to this modification, it is possible to prevent foreign matter (including moisture) from intruding into the first recess 810 exposed from the sealing resin 8. The semiconductor device A15 of the above structure is preferred in terms of improving durability and reliability. In addition, the semiconductor device A15 also has the same effect as the semiconductor device A1 of the above embodiment.

[0179] Second implementation method (first solution):

[0180] Fig.28 as well as Fig.29 A semiconductor device according to a second embodiment of the present disclosure is shown. Fig.28 It is a perspective view showing a semiconductor device A2 according to the present embodiment. Fig.29 is an enlarged cross-sectional view showing the main parts of the semiconductor device A2. Fig.16 Same cross-sectional view. In the semiconductor device A2 of the present embodiment, the sealing resin 8 does not have the above-mentioned first recessed portion 810. On the other hand, the semiconductor device A2 has a plurality of first protruding portions 852.

[0181] The plurality of first protrusions 852 protrude from the resin main surface 81 toward the z1 side in the z direction. The plurality of protrusions 851 are respectively provided corresponding to the plurality of control terminals 45 and overlap with the plurality of control terminals 45 when viewed from above. The metal pins 452 of the plurality of control terminals 45 protrude from the first protrusions 852. The first protrusions 852 are cylindrical. The first protrusions 852 cover a portion of the bracket 451 in each control terminal 45. Fig.29 As shown, the first outer side surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 in the bracket 451 are all in contact with the sealing resin 8. Specifically, a part of the first outer side surface 453a and the entire second surface 454b are in contact with the first protrusion 852. On the other hand, the first surface 454a of the first flange portion 454 is exposed from the sealing resin 8.

[0182] The first protrusion 852 has a protrusion top surface 852a. The protrusion top surface 852a surrounds the first surface 454a of the bracket 451 (first flange portion 454) when viewed from above. In addition, the first surface 454a and the protrusion top surface 852a are in the same planar shape. The protrusion top surface 852a and the first surface 454a in the same planar shape are located at different positions from the resin main surface 81 in the z direction. Specifically, the first surface 454a is located on the z1 side of the z direction relative to the resin main surface 81.

[0183] Next, the operation of this embodiment will be described.

[0184] In the semiconductor device A2 of this modified example, the bracket 451 constituting each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer side surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side in the z direction than the resin main surface 81. According to such a structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A2 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to such a structure, in adjacent control terminals 45, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased. Therefore, the semiconductor device A2 is suitable for achieving miniaturization in a plan view while improving the withstand voltage of the adjacent control terminal 45 .

[0185] The sealing resin 8 has a first protrusion 852. The first protrusion 852 protrudes from the resin main surface 81 to the z1 side in the z direction. The first flange portion 454 is located on the z1 side in the z direction relative to the resin main surface 81. According to the structure in which the sealing resin 8 has the first protrusion 852, the first surface 454a (first flange portion 454) can be appropriately arranged at a position different from the resin main surface 81 in the z direction.

[0186] The semiconductor device according to the first aspect of the present disclosure is not limited to the above-described embodiment, and the specific structure of each part of the semiconductor device can be freely changed in various designs.

[0187] The first aspect of the present disclosure includes the embodiments described in the following Supplementary Notes 1 to 16.

[0188] Note 1.

[0189] A semiconductor device comprising:

[0190] at least one terminal including a conductive cylindrical bracket and a metal pin inserted into the bracket;

[0191] a terminal support body, which supports the bracket; and

[0192] a sealing resin covering a portion of the bracket and the terminal support,

[0193] The sealing resin has a resin main surface facing one side in the thickness direction.

[0194] The bracket has a first surface located at an end on one side in the thickness direction and a first outer surface extending in the thickness direction.

[0195] The first surface is located at a position different from that of the resin main surface in the thickness direction.

[0196] The first outer side surface is in contact with the sealing resin.

[0197] The metal pin protrudes toward one side in the thickness direction beyond the resin main surface.

[0198] Note 2.

[0199] According to the semiconductor device described in Supplementary Note 1,

[0200] The bracket includes a cylindrical portion extending in the thickness direction and a first flange portion connected to an end portion of the cylindrical portion on one side in the thickness direction.

[0201] The first flange portion includes the first surface facing one side in the thickness direction, and a second surface located closer to the other side in the thickness direction than the first surface and facing the other side in the thickness direction.

[0202] The cylindrical portion has the first outer side surface.

[0203] The first outer side surface and the second side are entirely in contact with the sealing resin.

[0204] Note 3.

[0205] According to the semiconductor device described in Appendix 2,

[0206] The sealing resin has a first recessed portion that is recessed from the resin main surface toward the other side in the thickness direction.

[0207] The first flange portion is located on the other side of the thickness direction relative to the resin main surface.

[0208] The first recessed portion overlaps the entirety of the cylindrical portion when viewed in the thickness direction.

[0209] Note 4.

[0210] According to the semiconductor device described in Appendix 3,

[0211] At least a portion of the first surface is exposed from the sealing resin.

[0212] Note 5.

[0213] According to the semiconductor device described in Appendix 4,

[0214] The entire first surface is exposed from the sealing resin.

[0215] The first recess has an inner side surface of the recess connected to the resin main surface, and a bottom surface of the recess connected to an end of the inner side surface of the recess on the other side in the thickness direction and facing one side in the thickness direction.

[0216] The recessed portion bottom surface surrounds the first surface when viewed in the thickness direction.

[0217] Note 6.

[0218] According to the semiconductor device described in Appendix 3,

[0219] The first recess has a recess end edge that is located on the other side in the thickness direction and is in contact with the first surface.

[0220] Note 7.

[0221] According to the semiconductor device described in Appendix 6,

[0222] The first recess has a tapered inner side surface connected to the end edge of the recess.

[0223] The tapered inner side surface is inclined so that an inner diameter dimension increases toward one side in the thickness direction.

[0224] Note 8.

[0225] According to the semiconductor device described in Appendix 6,

[0226] The outer peripheral edge of the first flange portion surrounds the first recessed portion when viewed in the thickness direction.

[0227] Note 9.

[0228] A semiconductor device according to any one of appendices 3 to 8,

[0229] A first dimension, which is a distance between the resin main surface and the first surface in the thickness direction, is smaller than a second dimension, which is a length of the bracket in the thickness direction.

[0230] Note 10.

[0231] According to the semiconductor device described in Supplementary Note 9,

[0232] The ratio of the first dimension to the second dimension is 1 / 3 or more.

[0233] Note 11.

[0234] According to the semiconductor device described in Appendix 3,

[0235] The invention further includes a first resin filling portion that is filled in the first recessed portion.

[0236] Note 12.

[0237] According to the semiconductor device described in Appendix 2,

[0238] The sealing resin includes a first protrusion that protrudes from the resin main surface toward one side in the thickness direction.

[0239] A portion of the first outer side surface and the entirety of the second surface are in contact with the first protrusion.

[0240] Note 13.

[0241] According to the semiconductor device described in Appendix 12,

[0242] The first protrusion has a protrusion top surface facing one side in the thickness direction.

[0243] The top surface of the protrusion surrounds the first surface when viewed in the thickness direction.

[0244] The first surface is flush with the top surface of the protruding portion.

[0245] Note 14.

[0246] The semiconductor device according to appendix 1 or 2, further comprising:

[0247] a supporting conductor that supports the terminal support body; and

[0248] at least one semiconductor element electrically connected to the at least one terminal,

[0249] The at least one semiconductor element is supported by the supporting conductor.

[0250] Note 15.

[0251] According to the semiconductor device described in Appendix 14,

[0252] The at least one terminal is a control terminal for controlling the at least one semiconductor element.

[0253] Note 16.

[0254] According to the semiconductor device described in Appendix 15,

[0255] The supporting conductor includes a first conductive portion and a second conductive portion, the first conductive portion and the second conductive portion are spaced apart in a first direction orthogonal to the thickness direction.

[0256] The at least one semiconductor element includes a first switch element connected to the first conductive portion and a second switch element connected to the second conductive portion.

[0257] The control terminal includes a first control terminal for controlling the first switch element and a second control terminal for controlling the second switch element.

[0258] The terminal support body includes a first support portion supporting the first control terminal and a second support portion supporting the second control terminal.

[0259] Next, refer to Figure 30 to Figure 44 , a semiconductor device according to the first embodiment of the second scheme of the present disclosure is described. The semiconductor device B1 of this embodiment includes a supporting substrate 11, a plurality of power terminals 13, a plurality of semiconductor elements 21, a thermistor 22, a first conductive component 31, a second conductive component 32, a plurality of metal wires, a plurality of control terminals 45, a control terminal support 48, and a sealing resin 50. The plurality of power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16. The plurality of metal wires include a plurality of first metal wires 41, a plurality of second metal wires 42, a plurality of third metal wires 43, and a fourth metal wire 44.

[0260] Fig.30 It is a perspective view showing the semiconductor device B1. Fig.31 It is a top view showing the semiconductor device B1. Fig.32 1 is a plan view showing the semiconductor device B1 , in which the sealing resin 50 is shown by imaginary lines. Fig.33 is a top view showing the semiconductor device B1, which is viewed from Fig.32 The sealing resin 50 and the second conductive member 32 are omitted in the plan view. Fig.34 is from Fig.33 The first conductive component 31 is omitted in the top view. Fig.35 It is a bottom view showing the semiconductor device B1. Fig.36 is along Fig.32 Cross-sectional view of line XXXVI-XXXVI. Fig.37 , Fig.38 It is magnified Fig.36 A partial enlarged cross-sectional view of a portion of . Fig.39 is along Fig.32 Cross-sectional view of line XXXIX-XXXIX. Fig.40 is along Fig.32 Cross-sectional view of the XL-XL line. Fig.41 is along Fig.32 Cross-sectional view of the XLI-XLI line. Fig.42 is along Fig.32 Cross-sectional view of line XLII-XLII. Fig.43 is along Fig.32 Cross-sectional view of line XLIII-XLIII. Fig.44 It is magnified Fig.40 A partial enlarged cross-sectional view of a portion of .

[0261] In the following description, reference is made to the thickness direction z, the first direction x, and the second direction y which are orthogonal to each other. The thickness direction z corresponds to the thickness direction of the semiconductor device B1. In addition, "viewed from above" refers to when viewed in the thickness direction z. The first direction x is orthogonal to the thickness direction z. The second direction y is orthogonal to both the thickness direction z and the first direction x.

[0262] The semiconductor device B1 converts the DC power supply voltage applied to the first power terminal 14 and the two second power terminals 15 into AC power through the plurality of semiconductor elements 21. The converted AC power is input from the two third power terminals 16 to a power supply target such as a motor.

[0263] like Fig.34 , Figure 36 to Figure 39 , Fig.41 as well as Fig.42 As shown in FIG. 1 , the support substrate 11 supports a plurality of semiconductor elements 21 in the thickness direction z. The support substrate 11 is, for example, made of a DBC (Direct Bonded Copper) substrate. Figure 33 to Figure 43 As shown, the support substrate 11 includes an insulating layer 111, a support conductor 112 and a back metal layer 113. Figure 35 to Figure 43 As shown, the support substrate 11 is covered with the sealing resin 50 except for a portion of the back metal layer 113 .

[0264] like Figure 36 to Figure 43 As shown, the insulating layer 111 includes a portion between the support conductor 112 and the back metal layer 113 in the thickness direction z. The insulating layer 111 is made of a material with relatively high thermal conductivity. The insulating layer 111 is made of, for example, ceramics containing aluminum nitride (AlN). In addition to ceramics, the insulating layer 111 may also be made of an insulating resin sheet.

[0265] like Fig.33 , Fig.34 as well as Figure 36 to Figure 43As shown in FIG. 1 , the support conductor 112 is located above the insulating layer 111 in the thickness direction z (z1 side). The support conductor 112 is composed of copper (Cu). Fig.42 as well as Fig.43 As shown in FIG. 1 , the support conductor 112 is surrounded by the periphery of the insulating layer 111 when viewed from above. Figure 36 to Figure 43 As shown in FIG. 1 , the support conductor 112 has a main surface 1120. The main surface 1120 is a plane facing the z1 side in the thickness direction z. Fig.33 , Fig.34 as well as Figure 36 to Figure 43 As shown, the support conductor 112 includes a first conductive portion 1121 and a second conductive portion 1122. The first conductive portion 1121 and the second conductive portion 1122 are respectively rectangular in shape when viewed from above. The first conductive portion 1121 and the second conductive portion 1122 are separated from each other in the first direction x. The first conductive portion 1121 is located on the x1 side of the first direction x relative to the second conductive portion 1122. A plurality of semiconductor elements 21 are respectively bonded to either the first conductive portion 1121 or the second conductive portion 1122.

[0266] like Figure 36 to Figure 43 As shown in FIG. 1 , the back metal layer 113 is located below the insulating layer 111 (z2 side) in the thickness direction z. Fig.35 As shown, the back metal layer 113 is exposed from the sealing resin 50. On the lower surface of the back metal layer 113 (the surface facing the z2 side), a heat dissipation component (such as a heat sink) not shown in the figure can be installed. The composition of the back metal layer 113 includes copper. The back metal layer 113 is rectangular in a plan view. The back metal layer 113 is surrounded by the periphery of the insulating layer 111 in a plan view.

[0267] like Fig.34 as well as Figure 36 to Figure 39 As shown, a plurality of semiconductor elements 21 are respectively mounted on any one of the first conductive portion 1121 and the second conductive portion 1122. Each semiconductor element 21 is, for example, a MOSFET (Metal-Oxide-SemiconductorField-Effect Transistor). In addition, each semiconductor element 21 may also be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of the semiconductor device B1, the semiconductor element 21 is an n-channel type, and a vertically structured MOSFET is used as the object. The semiconductor element 21 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC) or silicon (Si).

[0268] like Fig.34 as well as Figure 36 to Figure 39As shown, in the semiconductor device B1, the plurality of semiconductor elements 21 include a plurality of first elements 21A and a plurality of second elements 21B. The structure of each of the plurality of second elements 21B is the same as the structure of each of the plurality of first elements 21A. The plurality of first elements 21A are mounted on the first conductive portion 1121. The plurality of first elements 21A are arranged along the second direction y. The plurality of second elements 21B are mounted on the second conductive portion 1122. The plurality of second elements 21B are arranged along the second direction y. The plurality of first elements 21A are respectively equivalent to the first switching elements in the present disclosure. The plurality of second elements 21B are respectively equivalent to the second switching elements in the present disclosure.

[0269] like Fig.34 , Fig.37 as well as Fig.38 As shown, the plurality of semiconductor elements 21 include a first electrode 211 , a second electrode 212 , a third electrode 213 and two fourth electrodes 214 .

[0270] like Fig.37 as well as Fig.38 As shown, the first electrode 211 faces either the first conductive portion 1121 or the second conductive portion 1122. A current corresponding to the power before conversion by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 corresponds to the drain electrode of the semiconductor element 21.

[0271] like Fig.34 , Fig.37 as well as Fig.38 As shown, the second electrode 212 is located on the opposite side of the first electrode 211 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the second electrode 212. That is, the second electrode 212 corresponds to the source electrode of the semiconductor element 21.

[0272] like Fig.34 As shown in FIG. 1 , the third electrode 213 is located on the same side as the second electrode 212 in the thickness direction z. A gate voltage for driving the semiconductor element 21 is applied to the third electrode 213. That is, the third electrode 213 is equivalent to the gate electrode of the semiconductor element 21. Fig.34 As shown, in a plan view, the area of ​​the third electrode 213 is smaller than the area of ​​the second electrode 212 .

[0273] like Fig.34 , Fig.37 as well as Fig.38As shown, the two fourth electrodes 214 are respectively located on the same side as the second electrode 212 in the thickness direction z, and are located next to the third electrode 213 in the first direction x. In the example shown in the figure, the two fourth electrodes 214 are arranged on both sides of the third electrode 213 in the second direction y, sandwiching the third electrode 213. The potential of each fourth electrode 214 is equal to the potential of the second electrode 212. The fourth electrode 214 is equivalent to a source sensing electrode. Different from the example shown in the figure, each semiconductor element 21 may include only one of the two fourth electrodes 214, or may not include either of the two fourth electrodes 214.

[0274] like Fig.37 as well as Fig.38 As shown, the conductive bonding layer 23 is between any one of the first conductive parts 1121 and 1122 and any one of the first electrodes 211 of the plurality of semiconductor elements 21. The conductive bonding layer 23 is, for example, solder. In addition, the conductive bonding layer 23 may also include a sintered body of metal particles. The first electrodes 211 of the plurality of first elements 21A are conductively bonded to the first conductive part 1121 via the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of first elements 21A are conductively bonded to the first conductive part 1121. The first electrodes 211 of the plurality of second elements 21B are conductively bonded to the second conductive part 1122 via the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of second elements 21B are conductively bonded to the second conductive part 1122. In addition, unlike the present embodiment, the plurality of first elements 21A and the plurality of second elements 21B may also be mounted on a metal component different from a part of the DBC substrate, etc. In this case, the metal component is equivalent to the first conductive part and the second conductive part in the present disclosure. The metal component may also be supported on the DBC substrate, etc., for example.

[0275] The plurality of power terminals 13 are respectively connected to the plurality of semiconductor elements 21. Currents corresponding to the power before conversion by the plurality of semiconductor elements 21 or currents corresponding to the power after conversion by the plurality of semiconductor elements 21 flow through the plurality of power terminals 13. The plurality of power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16.

[0276] like Fig.33 as well as Fig.39 As shown, the first power terminal 14 is joined to the first conductive portion 1121. There is no limitation on this joining, and it can be a joining using a conductive joining material (such as solder) not shown in the figure, a joining using laser welding, or a riveting joining. The first power terminal 14 is electrically connected to the first electrodes 211 of the plurality of first elements 21A via the first conductive portion 1121. The first power terminal 14 is a P terminal (positive electrode) to which a DC power supply voltage that is the object of power conversion is applied. As shown Fig.33As shown, the first power terminal 14 is located on the side opposite to the second conductive portion 1122 in the first direction x with the first conductive portion 1121 in between. The first power terminal 14 extends from the first conductive portion 1121 to the x1 side of the first direction x, and protrudes from the sealing resin 50 to the x1 side of the first direction x. Fig.32 As shown, the first power terminal 14 includes a portion covered by the sealing resin 50 and a portion exposed from 40. In the first power terminal 14, the portion covered by the sealing resin 50 is bonded to the first conductive portion 1121. In addition, in the first power terminal 14, the portion exposed from the sealing resin 50 serves as the above-mentioned P terminal of the semiconductor device B1.

[0277] The second conducting component 32 is connected to the two second power terminals 15. The two second power terminals 15 are connected to the second electrodes 212 of the plurality of second elements 21B via the second conducting component 32. The two second power terminals 15 are N terminals (negative electrodes) to which a DC power supply voltage to be the object of power conversion is applied. The two second power terminals 15 are separated from each other in the second direction y. The first power terminal 14 is located between the two second power terminals 15. Fig.33 As shown, the two second power terminals 15 are located on the same side as the first power terminal 14 relative to the first conductive portion 1121 and the second conductive portion 1122 in the first direction x. The two second power terminals 15 are separated from the first conductive portion 1121 and the second conductive portion 1122. The two second power terminals 15 extend in the first direction x and protrude from the sealing resin 50 to the x1 side of the first direction x. Fig.32 As shown, the two second power terminals 15 each include a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. In each second power terminal 15, the second conductive component 32 is bonded to the portion covered by the sealing resin 50. In addition, in each second power terminal 15, the portion exposed from the sealing resin 50 serves as the above-mentioned N terminal of the semiconductor device B1.

[0278] like Fig.33 as well as Fig.36As shown, the two third power terminals 16 are respectively joined to the second conductive portion 1122. There is no limitation on the joining, and it can be a joining using a conductive joining material (such as solder) not shown in the figure, a joining using laser welding, or a riveting joining. The two third power terminals 16 are respectively connected to the first electrodes 211 of the plurality of second elements 21B via the second conductive portion 1122. In addition, the two third power terminals 16 are respectively connected to the second electrodes 212 of the plurality of first elements 21A via the second conductive portion 1122 and the first conductive component 31. The AC power converted by the plurality of semiconductor elements 21 (the plurality of first elements 21A and the plurality of second elements 21B) is output from the two third power terminals 16. That is, the two third power terminals 16 are respectively output terminals of the AC power. The two third power terminals 16 are separated from each other in the second direction y. As shown Fig.33 As shown, the two third power terminals 16 are located on the side opposite to the first conductive portion 1121 with the second conductive portion 1122 in the first direction x. The two third power terminals 16 extend from the second conductive portion 1122 to the x2 side of the first direction x, and protrude from the sealing resin 50 to the x2 side of the first direction x. Fig.32 As shown, the two third power terminals 16 each include a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. In each third power terminal 16, the portion covered by the sealing resin 50 is bonded to the second conductive portion 1122. In addition, in each third power terminal 16, the portion exposed from the sealing resin 50 is used as the above-mentioned output terminal of the semiconductor device B1.

[0279] In this embodiment, the semiconductor device B1 includes four first elements 21A and four second elements 21B. The number of the first elements 21A and the number of the second elements 21B are not limited to this structure and can be appropriately changed according to the performance required of the semiconductor device B1. Fig.34 In the example shown, four first elements 21A and four second elements 21B are respectively configured. The number of the first elements 21A and the second elements 21B may be two or three, or five or more. The number of the first elements 21A and the second elements 21B may be equal or different. The number of the first elements 21A and the second elements 21B is determined according to the current capacity handled by the semiconductor device B1.

[0280] The semiconductor device B1 is configured as a half-bridge switching circuit, for example. In this case, a plurality of first elements 21A constitute an upper branch circuit of the semiconductor device B1, and a plurality of second elements 21B constitute a lower branch circuit. In the upper branch circuit, a plurality of first elements 21A are connected in parallel to each other, and in the lower branch circuit, a plurality of second elements 21B are connected in parallel to each other. Each first element 21A and each second element 21B are connected in series to form a bridge layer.

[0281] The plurality of control terminals 45 are pin-shaped terminals for controlling the driving of each first element 21A and each second element 21B. The plurality of control terminals 45 are, for example, crimping terminals. The plurality of control terminals 45 include a plurality of first control terminals 46A to 46C and a plurality of second control terminals 47A to 47D. The plurality of first control terminals 46A to 46C are used for controlling each first element 21A, etc. The plurality of second control terminals 47A to 47D are used for controlling each second element 21B, etc.

[0282] The plurality of first control terminals 46A to 46C are arranged at intervals in the second direction y. Fig.34 , Fig.39 as well as Fig.40 As shown in FIG. 1 and FIG. 2 , each of the first control terminals 46A to 46C is supported by the first conductive portion 1121 via a control terminal support body 48 (a first support portion 48A described later). Fig.33 as well as Fig.34 As shown, each of the first control terminals 46A to 46C is located between the plurality of first elements 21A and the first power terminal 14 and the two second power terminals 15 in the first direction x.

[0283] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first elements 21A. A drive signal (for example, a gate voltage is applied) for driving the plurality of first elements 21A is input to the first control terminal 46A.

[0284] The first control terminal 46B is a terminal (source sensing terminal) for detecting source signals of the plurality of first elements 21A, and detects a voltage (voltage corresponding to a source current) applied from the first control terminal 46B to each second electrode 212 (source electrode) of the plurality of first elements 21A.

[0285] The first control terminal 46C is a terminal (drain sense terminal) for detecting the drain voltage of the plurality of first elements 21A, and detects a voltage (voltage corresponding to a drain current) applied from the first control terminal 46C to each first electrode 211 (drain electrode) of the plurality of first elements 21A.

[0286] The plurality of second control terminals 47A to 47D are arranged at intervals in the second direction y. Fig.34 , Fig.39 as well as Fig.43 As shown in FIG. 1 and FIG. 2 , each of the second control terminals 47A to 47D is supported by the second conductive portion 1122 via a control terminal support body 48 (a second support portion 48B described later). Fig.33 as well as Fig.34As shown, each of the second control terminals 47A to 47D is located between the plurality of second elements 21B and the two third power terminals 16 in the first direction x.

[0287] The second control terminal 47A is a terminal (gate terminal) for inputting a drive signal of the plurality of second elements 21B. A drive signal (e.g., a gate voltage is applied) for driving the plurality of second elements 21B is input to the second control terminal 47A. The second control terminal 47B is a terminal (source sensing terminal) for detecting a source signal of the plurality of second elements 21B. The voltage (voltage corresponding to the source current) applied from the second control terminal 47B to each second electrode 212 (source electrode) of the plurality of second elements 21B is detected. The second control terminal 47C and the second control terminal 47D are not conductive with any of the plurality of second elements 21B. The second control terminal 47C and the second control terminal 47D are terminals conductive with the thermistor 22.

[0288] The plurality of control terminals 45 (the plurality of first control terminals 46A to 46C and the plurality of second control terminals 47A to 47D) each include a bracket 451 and a metal pin 452 .

[0289] The support 451 is made of a conductive material. The support 451 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). Fig.44 As shown, the bracket 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via the conductive bonding layer 459. Fig.44 As shown, the bracket 451 includes a cylindrical portion 453 , a first flange portion 454 and a second flange portion 455 .

[0290] The tubular portion 453 extends in the thickness direction z and has, for example, a cylindrical shape.

[0291] The first flange portion 454 is connected to the end portion on the z1 side in the thickness direction z of the cylindrical portion 453. The first flange portion 454 has a first surface 454a. The first surface 454a is a surface facing the z1 side in the thickness direction z. The first surface 454a is located at the end portion on the z1 side in the thickness direction z in the bracket 451. When viewed in the thickness direction z, the first surface 454a is annular (circular in the illustrated example).

[0292] The second flange portion 455 is connected to the end portion on the z2 side in the thickness direction z of the cylindrical portion 453. In the present embodiment, the second flange portion 455 is bonded to the control terminal support body 48 (a first metal layer 482 described later) via the conductive bonding layer 459.

[0293] The metal pin 452 is inserted through the first flange portion 454 and a part of the cylindrical portion 453 of the bracket 451 . The entire bracket 451 is exposed from the sealing resin 50 .

[0294] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by the bracket 451 by being pressed into the bracket 451. The metal pin 452 is electrically connected to the control terminal support body 48 (the first metal layer 482 described later) via the bracket 451 and the conductive bonding layer 459. The metal pin 452 protrudes further to the z1 side in the thickness direction z than the upper surface of the sealing resin 50 (the resin main surface 51 described later).

[0295] The control terminal support body 48 supports the plurality of control terminals 45. The control terminal support body 48 is interposed between the principal surface 1120 of the first conductive portion 1121 and the principal surface 1120 of the second conductive portion 1122 and the plurality of control terminals 45 in the thickness direction z.

[0296] The control terminal support body 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 1121 and supports a plurality of first control terminals 46A to 46C among the plurality of control terminals 45. Fig.44 As shown, the first support portion 48A is bonded to the first conductive portion 1121 via a bonding layer 49. The bonding layer 49 can be conductive or insulating, for example, solder. The second support portion 48B is arranged on the second conductive portion 1122 to support a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. The second support portion 48B is the same as the first support portion 48A and is bonded to the second conductive portion 1122 via a bonding layer not shown.

[0297] The control terminal support body 48 (the first support portion 48A and the second support portion 48B) is formed of, for example, a DBC (Direct Bonded Copper) substrate. The control terminal support body 48 includes an insulating layer 481, a first metal layer 482, and a second metal layer 483 which are stacked on each other.

[0298] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in a plan view.

[0299] like Fig.44 As shown in FIG. 4 , the first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is vertically arranged on the first metal layer 482. The first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. Fig.34As shown in FIG. 1 , the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, and a fifth portion 482E. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, and the fifth portion 482E are spaced apart and insulated from each other.

[0300] The fourth portion 482D is connected to a plurality of first metal wires 41, and is electrically connected to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via each first metal wire 41. The fourth portion 482D and the first portion 482A are connected to a plurality of third metal wires 43. Thus, the first portion 482A is electrically connected to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via the third metal wires 43 and the first metal wires 41. Fig.34 As shown, the first control terminal 46A is joined to the first portion 482A of the first support portion 48A, and the second control terminal 47A is joined to the first portion 482A of the second support portion 48B.

[0301] The second portion 482B is connected to a plurality of second metal wires 42 and is electrically connected to the fourth electrode 214 (source sensing electrode) of each first element 21A (each second element 21B) via each second metal wire 42. Fig.34 As shown, the first control terminal 46B is joined to the second portion 482B of the first support portion 48A, and the second control terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0302] The second control terminal 47C is joined to the third portion 482C. Fig.34 As shown, the second control terminal 47C is joined to the third portion 482C of the second support portion 48B. The first control terminal 46C and the second control terminal 47D are joined to the fifth portion 482E. The first control terminal 46C is joined to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the first support portion 48A is joined to the fourth metal wire 44 and is electrically connected to the first electrode 211 (drain electrode) of each first element 21A via the fourth metal wire 44. The second control terminal 47D is joined to the fifth portion 482E of the second support portion 48B.

[0303] The thermistor 22 is conductively connected across the third portion 482C and the fifth portion 482E of the second support portion 48B. The thermistor 22 is, for example, an NTC (Negative Temperature Coefficient) thermistor. NTC thermistors have a characteristic that their resistance decreases slowly as the temperature rises. The thermistor 22 is used as a temperature detection sensor for the semiconductor device B1.

[0304] Each of the plurality of first metal wires 41, the plurality of second metal wires 42, the plurality of third metal wires 43, and the fourth metal wire 44 is, for example, a bonding wire. The constituent material of each of the first metal wires 41, the second metal wires 42, the third metal wires 43, and the fourth metal wire 44 is not particularly limited, and may include, for example, any one of Au (gold), Al (aluminum), or Cu (copper). Fig.32 , Figures 36 to 40 as well as Fig.43 In the embodiment, the plurality of first metal wires 41, the plurality of second metal wires 42, the plurality of third metal wires 43, and the fourth metal wire 44 are omitted.

[0305] like Fig.44 As shown in FIG. 4 , the second metal layer 483 is formed on the lower surface of the insulating layer 481 (the surface facing the z2 side in the thickness direction z). Fig.44 As shown, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 1121 via the bonding layer 49. The second metal layer 483 of the second support portion 48B is similar to the second metal layer 483 of the first support portion 48A and is bonded to the second conductive portion 1122 via a bonding layer not shown.

[0306] like Fig.33 as well as Fig.36 As shown, the first conductive component 31 is conductively connected to the second electrodes 212 of the plurality of first elements 21A and the second conductive portion 1122. Thus, the second electrodes 212 of the plurality of first elements 21A are conductively connected to the second conductive portion 1122. The composition of the first conductive component 31 is not particularly limited, and may include copper, for example. The first conductive component 31 is a metal clip. Fig.33 as well as Fig.36 As shown, the first conductive component 31 has a main body portion 311 , a plurality of first bonding portions 312 , and a plurality of second bonding portions 313 .

[0307] The main body 311 constitutes a main part of the first conductive component 31. Fig.33 As shown, the main body 311 extends in the second direction y. Fig.33 as well as Fig.36 As shown, the main body 311 spans between the first conductive portion 1121 and the second conductive portion 1122. Fig.33 As shown, a plurality of through holes 310 are formed in the main body 311. The plurality of through holes 310 penetrate the main body 311 in the thickness direction z. In a plan view, the plurality of through holes 310 overlap between the first conductive portion 1121 and the second conductive portion 1122. Thus, when the sealing resin 50 is formed, the sealing resin 50 flows well downward in the thickness direction z (z2 side in the thickness direction z) of the main body 311.

[0308] like Fig.33 as well as Fig.36 As shown, a plurality of first bonding portions 312 are individually bonded to the second electrodes 212 of a plurality of first elements 21A. The plurality of first bonding portions 312 are respectively opposed to the second electrodes 212 of any one of the plurality of first elements 21A. When viewed from above, each first bonding portion 312 extends from the main body 311 to the x1 side of the first direction x. In the example shown in the figure, the plurality of first bonding portions 312 are divided into two strands from the main body 311, but may not be divided into two strands. The base end (the end on the side connected to the main body 311) of each first bonding portion 312 is bent downward in the thickness direction z (on the z2 side of the thickness direction z). Therefore, the front end (the end on the side opposite to the side connected to the main body 311) of each first bonding portion 312 is located in the thickness direction z below the main body 311 (on the z2 side of the thickness direction z) in the thickness direction z.

[0309] like Fig.33 as well as Fig.36 As shown, a plurality of second bonding portions 313 are bonded to the second conductive portion 1122. A plurality of second bonding portions 313 are respectively opposed to the second conductive portion 1122. When viewed from above, each second bonding portion 313 extends from the main body 311 to the x1 side of the first direction x. The base end (the end on the side connected to the main body 311) of each second bonding portion 313 is bent downward in the thickness direction z (on the z2 side of the thickness direction z). Therefore, the front end (the end on the side opposite to the side connected to the main body 311) of each second bonding portion 313 is located in the thickness direction z below the main body 311 in the thickness direction z (on the z2 side of the thickness direction z).

[0310] like Fig.37 As shown, the semiconductor device B1 further includes a first conductive bonding layer 33. The first conductive bonding layer 33 is interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 conductively bonds the second electrodes 212 of the plurality of first elements 21A to the plurality of first bonding portions 312. The first conductive bonding layer 33 is, for example, solder. In addition, the first conductive bonding layer 33 may also include a sintered body of metal particles.

[0311] like Fig.36 As shown, the semiconductor device B1 further includes a second conductive bonding layer 34. The second conductive bonding layer 34 is interposed between the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 conductively bonds the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 is, for example, solder. In addition, the second conductive bonding layer 34 may also include a sintered body of metal particles.

[0312] like Fig.32As shown, the second conductive component 32 is conductively connected to the second electrodes 212 of the plurality of second elements 21B and the two second power terminals 15. Thus, the second electrodes 212 of the plurality of second elements 21B are conductively connected to the two second power terminals 15. The composition of the second conductive component 32 is not particularly limited, and for example, it includes copper. The second conductive component 32 is a metal clip. Fig.32 , Fig.36 as well as Figure 39 to Figure 42 As shown, the second conductive component 32 has a pair of main body portions 321 , a plurality of third bonding portions 322 , a pair of fourth bonding portions 324 , a plurality of intermediate portions 326 , a plurality of beam portions 327 , and a pair of hanging portions 328 .

[0313] like Fig.32 As shown, the pair of main body parts 321 are located at positions separated from each other in the second direction y. The pair of main body parts 321 extend in the first direction x. Fig.36 as well as Fig.40 As shown, the pair of main bodies 321 are arranged parallel to the upper surfaces of the first conductive part 1121 and the second conductive part 1122. The pair of main bodies 321 are located farther from the first conductive part 1121 and the second conductive part 1122 than the main body 311 of the first conductive member 31.

[0314] like Fig.32 , Fig.41 as well as Fig.42 As shown, the plurality of intermediate portions 326 are located at positions separated from each other in the second direction y, and are located between the pair of main body portions 321 in the second direction y. The plurality of intermediate portions 326 extend in the first direction x.

[0315] like Fig.32 as well as Fig.42 As shown, a plurality of third bonding portions 322 are individually bonded to the second electrodes 212 of the plurality of second elements 21B. The plurality of third bonding portions 322 are respectively opposed to the second electrodes 212 of any one of the plurality of second elements 21B. When viewed from above, the plurality of third bonding portions 322 extend from the plurality of intermediate portions 326 to the second direction y. The base end (the end on the side connected to the intermediate portion 326) of each third bonding portion 322 is bent downward in the thickness direction z (on the z2 side of the thickness direction z). Therefore, the front end (the end on the side opposite to the side connected to the intermediate portion 326) of each third bonding portion 322 is located in the thickness direction z below the thickness direction z (on the z2 side of the thickness direction z) than the intermediate portion 326.

[0316] like Fig.32 as well as Fig.36 As shown, the pair of fourth engagement portions 324 are individually engaged with the two second power terminals 15. The pair of fourth engagement portions 324 are opposed to corresponding ones of the two second power terminals 15, respectively.

[0317] like Fig.32 As shown, the plurality of beam portions 327 are arranged along the second direction y. In a plan view, the plurality of beam portions 327 include regions that overlap with the plurality of first bonding portions 312 of the first conductive component 31 individually. Fig.32 as well as Fig.41 As shown, the two sides of the second direction y of the cross beam portion 327 located in the center of the multiple cross beam portions 327 are connected to the multiple intermediate portions 326. The two sides of the second direction y of the remaining two cross beam portions 327 in the multiple cross beam portions 327 are connected to any one of the pair of main body portions 321 and any one of the multiple intermediate portions 326.

[0318] like Fig.32 as well as Fig.41 As shown, a pair of hanging parts 328 are connected to a pair of main body parts 321 separately. Fig.41 As shown, a pair of hanging portions 328 extend downward in the thickness direction z (on the z2 side of the thickness direction z) from a corresponding one of the pair of main body portions 321. The pair of hanging portions 328 are connected to the outer edge of the second direction y with respect to the corresponding one of the pair of main body portions 321. In the example shown in the figure, when viewed along the second direction y, the lower ends of the pair of hanging portions 328 (the ends on the z2 side of the thickness direction z) overlap with the first conductive portion 1121.

[0319] like Fig.38 As shown, the semiconductor device B1 further includes a third conductive bonding layer 35. The third conductive bonding layer 35 is interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 conductively bonds the second electrodes 212 of the plurality of second elements 21B to the plurality of third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. In addition, the third conductive bonding layer 35 may also include a sintered body of metal particles.

[0320] like Fig.36 As shown, the semiconductor device B1 further includes a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is interposed between the two second power terminals 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 conductively bonds the two second power terminals 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 is, for example, solder. In addition, the fourth conductive bonding layer 36 may also include a sintered body of metal particles.

[0321] like Figure 30 to Figure 43As shown, the sealing resin 50 covers the plurality of semiconductor elements 21, the first conductive component 31, the second conductive component 32, the plurality of first metal wires 41, the plurality of second metal wires 42, and the plurality of third metal wires 43. In addition, the sealing resin 50 covers a portion of each of the support substrate 11, the plurality of power terminals 13, and the control terminal support 48. The sealing resin 50 has electrical insulation properties. The sealing resin 50 includes, for example, a black epoxy resin. The sealing resin 50 is formed, for example, by molding. Figure 30 to Figure 32 as well as Figure 35 to Figure 43 As shown, the sealing resin 50 has a resin main surface 51 , a resin rear surface 52 , a plurality of resin side surfaces 531 to 534 , a plurality of first recesses 511 , and a pair of recesses 531 a .

[0322] like Fig.36 as well as Figure 39 to Figure 43 As shown, the resin main surface 51 faces the same direction as the upper surface (main surface 1120) of the first conductive portion 1121 and the upper surface (main surface 1120) of the second conductive portion 1122 in the thickness direction z. The metal pins 452 of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46C and the plurality of second control terminals 47A to 47D) protrude from the resin main surface 51. Fig.36 as well as Figure 39 to Figure 43 As shown in FIG. 5 , the resin back surface 52 faces the side opposite to the resin main surface 51 in the thickness direction z. Fig.35 As shown in FIG. 1 , the resin back surface 52 is a frame-shaped structure that surrounds the lower surface (the surface facing the z2 side in the thickness direction z) of the back metal layer 113 of the support substrate 3 when viewed from above. The back metal layer 113 of the support substrate 11 is exposed from the resin back surface 52. The lower surface (the surface facing the z2 side in the thickness direction z) of the back metal layer 113 is, for example, the same surface as the resin back surface 52.

[0323] like Fig.31 , Fig.32 , Fig.36 as well as Fig.39 As shown, the resin side surface 531 and the resin side surface 532 are spaced apart from each other in the first direction x. The resin side surface 531 and the resin side surface 532 face opposite sides in the first direction x and extend in the second direction y. The resin side surface 531 and the resin side surface 532 are connected to the resin main surface 51. The resin side surface 531 faces the x1 side of the first direction x, and the resin side surface 532 faces the x2 side of the first direction x. The first power terminal 14 and the two second power terminals 15 protrude from the resin side surface 531, respectively. The two third power terminals 16 protrude from the resin side surface 532, respectively.

[0324] like Fig.31 , Fig.32 as well as Figure 40 to Figure 43As shown, the resin side surface 533 and the resin side surface 534 are spaced apart from each other in the second direction y. The resin side surface 533 and the resin side surface 534 face opposite sides in the second direction y and extend in the first direction x. The resin side surface 533 and the resin side surface 534 are connected to the resin main surface 51 and the resin back surface 52. The resin side surface 533 faces the y1 side of the second direction y, and the resin side surface 534 faces the y2 side of the second direction y.

[0325] like Fig.30 , Fig.39 , Fig.40 , Fig.43 as well as Fig.44 As shown in FIG. 1 , the plurality of first recesses 511 are recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In the present embodiment, the plurality of first recesses 511 are individually provided corresponding to the plurality of control terminals 45. The plurality of control terminals 45 are individually arranged corresponding to the plurality of first recesses 511.

[0326] like Fig.31 , Fig.39 , Fig.40 , Fig.43 as well as Fig.44 As shown, the first recess 511 overlaps the entire support 451 in the corresponding control terminal 45 when viewed from above. Fig.44 As shown, the first recess 511 has a first recess inner side surface 512 and a chamfered portion 515. The first recess inner side surface 512 extends in the thickness direction z and is formed in a conical shape inclined so that the inner diameter dimension decreases toward the z2 side in the thickness direction z.

[0327] like Fig.44 As shown, the first concave inner side surface 512 has a first end edge 513 and a second end edge 514. The first end edge 513 is located at the end of the first concave inner side surface 512 on the z2 side in the thickness direction z, and is in contact with the control terminal support body 48 (first metal layer 482). The second end edge 514 is located at the end of the first concave inner side surface 512 on the z1 side in the thickness direction z. The second end edge 514 surrounds the first end edge 513 when viewed from above.

[0328] The chamfered portion 515 is connected to the resin main surface 51 and is interposed between the resin main surface 51 and the first recessed inner surface 512. The specific shape of the chamfered portion 515 is not particularly limited, and for example, a curved R chamfer (arc chamfer) shape or a C chamfer shape can be cited. In the example shown in the figure, the chamfered portion 515 is an R chamfer shape.

[0329] Such first recessed portion 511 is formed by, for example, molding while pressing control terminal support body 48 with a pin or the like having a shape corresponding to first recessed portion 511 to form a trace of sealing resin 50 . Fig.45 A process for manufacturing the semiconductor device B1 is shown in FIG. Fig.44 Same cross-sectional view. Fig.45 As shown, for example, a cylindrical pin 911 is provided in a mold 91 for molding. A bracket 451 is arranged in the inner space of the pin 911, and a fluid resin material is injected into the cavity space 919 of the mold 91 while the lower end (the end on the z2 side in the thickness direction z) of the pin 911 is pushed toward the control terminal support 48 (the first metal layer 482). Fig.44 as well as Fig.45 As can be understood, the first concave portion inner side surface 512 of the first concave portion 511 has a draft angle corresponding to the outer peripheral surface of the cylindrical pin 911. Fig.45 As shown, in the mold 91, a rounded portion 915 is provided at the base portion of the cylindrical pin 911. The chamfered portion 515 of the first recess 511 has a shape corresponding to the rounded portion 915 of the mold 91. After the sealing resin 50 is formed by molding using the mold 91, the entirety of the bracket 451 disposed in the inner space of the cylindrical pin 911 is exposed from the sealing resin 50.

[0330] By controlling the configuration of the bracket 451 of the terminal 45, when molded, there is Fig.45 The lower end of the cylindrical pin 911 shown is pushed in a manner that straddles the first metal layer 482 and the insulating layer 481. On the insulating layer 481, there is a step difference in the thickness direction z at the boundary between the portion where the first metal layer 482 is formed and the portion where the first metal layer 482 is not formed. Therefore, when the lower end of the cylindrical pin 911 is pushed in a manner that straddles the first metal layer 482 and the insulating layer 481, a gap may be generated between the lower end of the cylindrical pin 911 and the control terminal support body 48 (insulating layer 481). Considering such a situation, the following method is adopted, that is, a resist layer is formed, for example, at a portion of the upper surface of the insulating layer 481 where the first metal layer 482 is not formed, to eliminate the above-mentioned step difference between the portion where the first metal layer 482 is formed and the portion where the first metal layer 482 is not formed on the insulating layer 481. In addition, the lower end of the cylindrical pin 911 may also be formed of a buffering material. In this case, when the cylindrical pin 911 is pressed against the control terminal support body 48 , the step difference can be absorbed by the buffer material, and no gap is generated between the lower end of the cylindrical pin 911 and the control terminal support body 48 (insulating layer 481 ).

[0331] In addition, refer to Fig.45The method for forming the first recess 511 is not limited to the above method. For example, the sealing resin 50 may be formed by molding while pressing the control terminal support body 48 with a columnar solid pin corresponding to the first recess 511. In this case, the bracket 451 is not arranged on the control terminal support body 48 during molding. And, after molding, the bracket 451 is arranged on the first recess 511 on the control terminal support body 48.

[0332] In the example shown in the figure, the first surface 454a of the bracket 451 (first flange portion 454) is located on the z2 side in the thickness direction z with respect to the resin main surface 51. Thus, the entire bracket 451 is accommodated in the first recess 511.

[0333] like Fig.31 As shown, the pair of recesses 531a is recessed from the resin side surface 531 toward the x2 side in the first direction x. The pair of recesses 531a extends from the resin main surface 51 to the resin back surface 52 in the thickness direction z. The pair of recesses 531a is located on both sides of the first power terminal 14 in the second direction y.

[0334] Next, the operation of this embodiment will be described.

[0335] The bracket 451 constituting each control terminal 45 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side of the thickness direction z than the resin main surface 51. According to such a structure, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B1 can achieve miniaturization when viewed from above.

[0336] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. According to such a structure, it is possible to prevent the sealing resin 50 from flowing into the inside of the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B1, the conduction between the bracket 451 and the metal pin 452 can be appropriately maintained, and the control terminal 45 composed of the bracket 451 and the metal pin 452 can function appropriately.

[0337] A plurality of control terminals 45 are arranged in the first recess 511 of the sealing resin 50. In the present embodiment, the sealing resin 50 has a plurality of first recesses 511, and the plurality of control terminals 45 are individually arranged corresponding to the plurality of first recesses 511. The first recess 511 (the first recess inner side surface 512) has a first edge 513 in contact with the control terminal support 48 (the first metal layer 482). According to such a structure, in adjacent control terminals 45, the creepage distance along the surface of the sealing resin 50 (resin main surface 51, first recess inner side surface 512 of the first recess 511, etc.) can be increased. Therefore, the semiconductor device B1 is suitable for achieving miniaturization when viewed from above while improving the withstand voltage of adjacent control terminals 45.

[0338] The first recess 511 overlaps the entire bracket 451 in the corresponding control terminal 45 in a plan view. With such a structure, the bracket 451 surrounded by the first recess 511 has excellent visibility in a plan view. This further improves the workability when the metal pin 452 is pressed into the bracket 451.

[0339] Hereinafter, a modification of the semiconductor device according to the second aspect of the present disclosure will be described. The configurations of the components in the modification can be combined with each other within a range that does not cause technical contradictions.

[0340] Figure 46-48 A semiconductor device according to a first modified example of the first embodiment of the second aspect is shown. Fig.46 1 is a top view showing a semiconductor device B11 according to this modification. Fig.47 is along Fig.46 Cross-sectional view of line XLVII-XLVII. Fig.48 is along Fig.46 A cross-sectional view of the XLVIII-XLVIII line. Fig.46 In the following drawings, elements that are the same as or similar to those of the semiconductor device B1 of the above embodiment are denoted by the same reference numerals as those of the above embodiment, and description thereof will be appropriately omitted.

[0341] In the semiconductor device B11 of this modification, the structure of the first recess 511 in the sealing resin 50 is different from that of the semiconductor device B1 of the above embodiment. Figure 46-48As shown, in the semiconductor device B11, the sealing resin 50 has two first recesses 511. One of the two first recesses 511 corresponds to the plurality of control terminals 45 (first control terminals 46A to 46C), and the plurality of control terminals 45 (first control terminals 46A to 46C) are arranged in the first recess 511 of the one. The first recess 511 of the one overlaps the entirety of the bracket 451 of each of the plurality of control terminals 45 (first control terminals 46A to 46C) in a plan view. The other of the two first recesses 511 corresponds to the plurality of control terminals 45 (second control terminals 47A to 47D), and the plurality of control terminals 45 (second control terminals 47A to 47D) are arranged in the first recess 511 of the other. The other first recess 511 overlaps the entirety of the bracket 451 of each of the plurality of control terminals 45 (second control terminals 47A to 47D) in a plan view.

[0342] In the semiconductor device B11 of this modified example, the bracket 451 constituting each control terminal 45 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side of the thickness direction z than the resin main surface 51. According to such a structure, the plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B11 can achieve miniaturization when viewed from above.

[0343] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. According to such a structure, it is possible to prevent the sealing resin 50 from flowing into the inside of the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B11, the conduction between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 including the bracket 451 and the metal pin 452 can function properly.

[0344] A plurality of control terminals 45 are arranged in the first recess 511 of the sealing resin 50. In the semiconductor device B11, the sealing resin 50 has two first recesses 511. A plurality of control terminals 45 (first control terminals 46A to 46C) are arranged in one first recess 511, and a plurality of control terminals 45 (second control terminals 47A to 47D) are arranged in the other first recess 511. In this way, according to the structure in which a plurality of control terminals 45 are concentrated in one first recess 511, the sealing resin 50 can be formed relatively easily by molding.

[0345] Fig.49 A semiconductor device according to a second modified example of the first embodiment of the second aspect is shown. Fig.49 is a cross-sectional view showing a semiconductor device B12 according to this modification, Fig.40The semiconductor device B12 of this modification further includes a first resin portion 55 , and is different from the semiconductor device B1 of the above-described embodiment in that it includes the first resin portion 55 .

[0346] The first resin portion 55 fills at least a portion of the first recess 511 and contacts at least a portion of the bracket 451. In the semiconductor device B12, the first resin portion 55 is filled in each first recess 511 in a manner of filling the first recess 511. The first resin portion 55 covers the entire bracket 451 arranged in the first recess 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be the same material as the sealing resin 50, but may also be a material different from the sealing resin 50. In the semiconductor device B12, for example, the constituent material of the first resin portion 55 is different from the constituent material of the sealing resin 50. In the semiconductor device B12, for example, the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. In this way, the constituent material of the first resin portion 55 in the case where the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50 is not particularly limited, and examples thereof include silicone resin, silicone gel, and the like.

[0347] In the semiconductor device B12 of this modified example, the bracket 451 constituting each control terminal 45 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side of the thickness direction z than the resin main surface 51. According to such a structure, the plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B12 can achieve miniaturization when viewed from above.

[0348] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. According to such a structure, it is possible to prevent the sealing resin 50 from flowing into the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B12, the conduction between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 composed of the bracket 451 and the metal pin 452 can function properly.

[0349] In the semiconductor device B12, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the bracket 451 arranged in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. According to such a structure, the stress around the bracket 451 covered by the first resin portion 55 can be reduced. In addition, in the semiconductor device B12, by having the first resin portion 55, it is possible to prevent foreign matter (including moisture) from intruding into the first recess 511 exposed from the sealing resin 50. The semiconductor device B12 of the above structure is preferred in terms of improving durability and reliability. In addition, the semiconductor device B12 also has the same structure as the semiconductor device B1 of the above embodiment and has the same effect as the above embodiment.

[0350] Fig.50 A semiconductor device according to a third modified example of the first embodiment of the second aspect is shown. Fig.50 is a cross-sectional view showing a semiconductor device B13 according to this modification, Fig.47 The semiconductor device B13 of this modification further includes a first resin portion 55 , and is different from the semiconductor device B11 of the above modification in that it includes the first resin portion 55 .

[0351] The first resin portion 55 fills at least a portion of the first recess 511 and is in contact with at least a portion of the bracket 451. In the semiconductor device B13, the first resin portion 55 fills a portion of the first recess 511. The first resin portion 55 covers a portion of each of the plurality of brackets 451 disposed in the first recess 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be the same material as the sealing resin 50, but may also be a material different from the sealing resin 50. In the semiconductor device B13, for example, the constituent material of the first resin portion 55 is different from the constituent material of the sealing resin 50. In the semiconductor device B13, for example, the elastic modulus of the first resin portion 55 is greater than the elastic modulus of the sealing resin 50. In this way, the constituent material of the first resin portion 55 in the case where the elastic modulus of the first resin portion 55 is greater than the elastic modulus of the sealing resin 50 is not particularly limited, and examples thereof include epoxy potting materials and the like.

[0352] In the semiconductor device B13 of this modification, the bracket 451 constituting each control terminal 45 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side of the thickness direction z than the resin main surface 51. According to such a structure, the plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B13 can achieve miniaturization when viewed from above.

[0353] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. According to such a structure, it is possible to prevent the sealing resin 50 from flowing into the inside of the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B13, the conduction between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 composed of the bracket 451 and the metal pin 452 can function properly.

[0354] In the semiconductor device B13, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers at least a portion of the bracket 451 disposed in each first recess 511. The elastic modulus of the first resin portion 55 is greater than the elastic modulus of the sealing resin 50. According to such a structure, the vibration resistance of the bracket 451 covered by the first resin portion 55 is improved. The semiconductor device B13 of the above structure is preferred in terms of achieving performance improvement. In addition, the semiconductor device B13 also has the same effect as the semiconductor device B11 of the above-mentioned modified example.

[0355] Fig.51 A semiconductor device according to a fourth modified example of the first embodiment of the second aspect is shown. Fig.51 is a cross-sectional view showing a semiconductor device B14 according to this modification, Fig.40 Same cross-sectional view. The semiconductor device B14 of this variation further includes a first resin portion 55. In addition, in the semiconductor device B14, the dimension of the thickness direction z of the sealing resin 50 is smaller than that of the semiconductor device B1 of the above-mentioned embodiment, and accordingly, the dimension of the thickness direction z of each first recess 511 is also smaller than that of the above-mentioned semiconductor device B1. In addition, the bracket 451 of each control terminal 45 protrudes further to the z1 side of the thickness direction z than the resin main surface 51 of the sealing resin 50. The first surface 454a of the bracket 451 (first flange portion 454) is located on the z1 side of the thickness direction z relative to the resin main surface 51. As a result, a portion of the bracket 451 is housed in the first recess 511.

[0356] The first resin portion 55 fills at least a portion of the first recess 511 and is in contact with at least a portion of the bracket 451. In the semiconductor device B14, the first resin portion 55 is filled in each first recess 511 in a manner of filling each first recess 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be the same material as the sealing resin 50, but may also be a material different from the sealing resin 50. In the semiconductor device B14, for example, the constituent material of the first resin portion 55 is different from the constituent material of the sealing resin 50. In the semiconductor device B14, for example, the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. In this way, the constituent material of the first resin portion 55 in the case where the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50 is not particularly limited, and examples thereof include silicone resin, silicone gel, and the like.

[0357] In the semiconductor device B14, the first resin portion 55 has a portion located on the z1 side of the thickness direction z relative to the resin main surface 51. The portion located on the z1 side of the thickness direction z relative to the resin main surface 51 in the first resin portion 55 is, for example, a portion that bulges toward the z1 side of the thickness direction z along the outer peripheral surface of the bracket 451 (cylindrical portion 453) due to the surface tension of the first resin portion 55. In the example shown in the figure, the first surface 454a of the bracket 451 (first flange portion 454) is exposed from the first resin portion 55.

[0358] In the semiconductor device B14 of this modification, the bracket 451 constituting each control terminal 45 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side of the thickness direction z than the resin main surface 51. According to such a structure, the plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B14 can achieve miniaturization when viewed from above.

[0359] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. According to such a structure, it is possible to prevent the sealing resin 50 from flowing into the inside of the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B14, the conduction between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 composed of the bracket 451 and the metal pin 452 can function properly.

[0360] In the semiconductor device B14, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the bracket 451 arranged in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. According to such a structure, the stress around the bracket 451 covered by the first resin portion 55 can be reduced. In addition, in the semiconductor device B14, the first surface 454a of each bracket 451 is exposed from the first resin portion 55. Thus, after the first resin portion 55 is filled into the first recess 511, the metal pin 452 can be pressed into the bracket 451. The operation of pressing the metal pin 452 into the bracket 451 is stable. In addition, the semiconductor device B14 also has the same structure as the semiconductor device B1 of the above-mentioned embodiment, and has the same effect as the above-mentioned embodiment.

[0361] Fig.52 as well as Fig.53 A semiconductor device according to a fifth modified example of the first embodiment of the second aspect is shown. Fig.52 It is a top view showing the semiconductor device B15 according to the present variation. Fig.53 is along Fig.52 2 is a cross-sectional view taken along line LIII-LIII of the semiconductor device B15 of the present modification. In the semiconductor device B15 of the present modification, the sealing resin 50 has a plurality of second recesses 517. The sealing resin 50 is different from the semiconductor device B1 of the above embodiment in that it has the second recesses 517.

[0362] The second recess 517 is recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In the semiconductor device B15, the sealing resin 50 has a plurality of second recesses 517. The plurality of second recesses 517 are respectively provided corresponding to any one of the plurality of first recesses 511. Fig.52 As shown, the second recess 517 surrounds the corresponding first recess 511 in a plan view. In the example shown in the figure, the second recess 517 is annular in a plan view.

[0363] like Fig.53 As shown, the second recess 517 has a second recess bottom surface 518. The second recess bottom surface 518 is located at the end on the z2 side in the thickness direction z of the second recess 517. The second recess bottom surface 518 is spaced apart from the control terminal support 48 on the z1 side in the thickness direction z.

[0364] In the semiconductor device B15 of this modification, the bracket 451 constituting each control terminal 45 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further to the z1 side of the thickness direction z than the resin main surface 51. According to such a structure, the plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B15 can achieve miniaturization when viewed from above.

[0365] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. According to such a structure, it is possible to prevent the sealing resin 50 from flowing into the inside of the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B15, the conduction between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 composed of the bracket 451 and the metal pin 452 can function properly.

[0366] In the semiconductor device B15, the sealing resin 50 has a second recess 517. The second recess 517 surrounds the first recess 511 when viewed from above. The end of the second recess 517 on the z2 side in the thickness direction z (the second recess bottom surface 518) is spaced apart from the control terminal support 48 on the z1 side in the thickness direction z. According to such a structure, the creepage distance along the surface of the sealing resin 50 (resin main surface 51, first recess inner surface 512 of the first recess 511, second recess 517, etc.) can be further increased between the control terminal 45 surrounded by the second recess 517 and the adjacent control terminal 45 when viewed from above. The semiconductor device B15 can be miniaturized when viewed from above, and the withstand voltage of the adjacent control terminal 45 can be further improved. In addition, the semiconductor device B15 is also within the same structural range as the semiconductor device B1 of the above-mentioned embodiment, and the same effects as the above-mentioned embodiment are achieved.

[0367] The semiconductor device of the present disclosure is not limited to the above-described embodiment, and the specific structure of each part of the semiconductor device of the present disclosure can be freely changed in various designs.

[0368] In the above embodiment and each modification, the entire bracket 451 is exposed from the sealing resin 50 for each of the plurality of control terminals 45, but the present disclosure is not limited thereto. For example, the bracket 451 may be covered by the sealing resin 50 in any part of the plurality of control terminals 45.

[0369] The second aspect of the present disclosure includes the configurations described in the following Supplementary Notes 1B to 17B.

[0370] Note 1B.

[0371] A semiconductor device comprising:

[0372] A supporting substrate having a main surface facing one side in the thickness direction;

[0373] at least one terminal including a conductive bracket disposed on the main surface and a metal pin inserted into the bracket; and

[0374] a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the supporting substrate,

[0375] In at least one of the at least one terminal, the entirety of the bracket is exposed from the sealing resin,

[0376] The metal pin protrudes toward one side in the thickness direction beyond the resin main surface.

[0377] Note 2B.

[0378] According to the semiconductor device described in Supplementary Note 1B,

[0379] The device further comprises a terminal support body, the terminal support body being interposed between the support substrate and the at least one terminal in the thickness direction.

[0380] The bracket is supported by the terminal support body.

[0381] Note 3B.

[0382] According to the semiconductor device described in Supplementary Note 2B,

[0383] The sealing resin covers a portion of the terminal support.

[0384] Note 4B.

[0385] According to the semiconductor device described in Supplementary Note 3B,

[0386] A plurality of the above-mentioned terminals are provided,

[0387] The sealing resin has at least one first recessed portion recessed from the resin main surface toward the other side in the thickness direction.

[0388] The at least one first recess has a first end edge connected to the terminal support body.

[0389] The plurality of terminals are disposed in the at least one first recess.

[0390] Note 5B.

[0391] According to the semiconductor device described in Supplementary Note 4B,

[0392] The device comprises a plurality of the first recessed portions.

[0393] The plurality of terminals are individually arranged corresponding to the plurality of first recesses,

[0394] When viewed in the thickness direction, the plurality of first recesses respectively overlap with the entirety of the bracket in the corresponding terminal.

[0395] Note 6B.

[0396] According to the semiconductor device described in Supplementary Note 4B,

[0397] When viewed in the thickness direction, the first recess overlaps all of the brackets in the plurality of terminals.

[0398] Note 7B.

[0399] A semiconductor device according to Supplementary Note 5B or 6B,

[0400] further comprising a first resin portion filling at least a portion of the first recessed portion,

[0401] The first resin portion is in contact with at least a portion of the bracket.

[0402] Note 8B.

[0403] According to the semiconductor device described in Supplementary Note 7B,

[0404] The first resin portion is made of a material different from that of the sealing resin.

[0405] The first resin portion has an elastic modulus smaller than an elastic modulus of the sealing resin.

[0406] Note 9B.

[0407] According to the semiconductor device described in Supplementary Note 7B,

[0408] The first resin portion is made of a material different from that of the sealing resin.

[0409] The first resin portion has an elastic modulus greater than an elastic modulus of the sealing resin.

[0410] Note 10B.

[0411] A semiconductor device according to any one of Supplementary Notes 4B to 9B,

[0412] The sealing resin has a second recessed portion that is recessed from the resin main surface toward the other side in the thickness direction.

[0413] The second recessed portion surrounds the first recessed portion when viewed in the thickness direction.

[0414] Note 11B.

[0415] According to the semiconductor device described in Supplementary Note 10B,

[0416] The second recess has a second recess bottom surface located at an end portion on the other side in the thickness direction.

[0417] The second recess bottom surface is spaced apart from the terminal support body toward one side in the thickness direction.

[0418] Note 12B.

[0419] A semiconductor device according to any one of Supplementary Notes 4B to 11B (or any one of Supplementary Notes 4B to 6B),

[0420] The at least one first recess includes an inner side surface of the first recess,

[0421] The inner side surface of the first recess has the first end edge located at the end on the other side in the thickness direction and the second end edge located at the end on one side in the thickness direction.

[0422] The second end edge surrounds the first end edge when viewed in the thickness direction.

[0423] Note 13B.

[0424] According to the semiconductor device described in Supplementary Note 12B,

[0425] The at least one first recess has a chamfered portion interposed between the resin main surface and an inner side surface of the first recess.

[0426] Note 14B.

[0427] A semiconductor device according to any one of Supplementary Notes 1B to 13B (or any one of Supplementary Notes 1B to 6B),

[0428] The bracket has a first surface located at an end portion on one side in the thickness direction.

[0429] The first surface is arranged on the other side in the thickness direction with respect to the resin main surface.

[0430] Note 15B.

[0431] A semiconductor device according to any one of Supplementary Notes 2B to 13B (or any one of Supplementary Notes 2B to 6B),

[0432] The device further includes at least one semiconductor element disposed on the main surface and electrically connected to the at least one terminal.

[0433] Note 16B.

[0434] According to the semiconductor device described in Supplementary Note 15B,

[0435] The at least one terminal is a control terminal for controlling the at least one semiconductor element.

[0436] Note 17B.

[0437] According to the semiconductor device described in Supplementary Note 16B,

[0438] The support substrate includes a first conductive portion and a second conductive portion, the first conductive portion and the second conductive portion being spaced apart in a first direction orthogonal to the thickness direction.

[0439] The at least one semiconductor element includes a first switch element connected to the first conductive portion and a second switch element connected to the second conductive portion.

[0440] The control terminal includes a first control terminal for controlling the first switch element and a second control terminal for controlling the second switch element.

[0441] The terminal support body includes a first support portion supporting the first control terminal and a second support portion supporting the second control terminal.

[0442] Explanation of symbols

[0443] (Explanation of Symbols in the First Scheme)

[0444] A1, A11, A12, A13, A14, A15, A2—semiconductor device, 10A—first semiconductor element, 10B—second semiconductor element, 101—element main surface, 102—element back surface, 11—first main surface electrode, 12—second main surface electrode, 121—gate finger, 13—third main surface electrode, 15—back surface electrode, 17—thermistor, 19—conductive bonding material, 3—support substrate, 301—support surface, 302—bottom surface, 31—insulating layer, 32—support conductor, 32A—first conductive portion, 32B—second conductive portion, 321—first bonding layer, 33—back surface metal layer, 41—first terminal, 42—second terminal, 43—third terminal, 44 —Fourth terminal, 45—Control terminal, 451—Bracket, 452—Metal pin, 453—Cylinder-shaped portion, 453a—First outer side surface, 453b—First inner side surface, 454—First flange portion, 454a—First surface, 454b—Second surface, 455—Second flange portion, 459—Conductive bonding material, 46A, 46B, 46C, 46D, 46E—First control terminal, 47A, 47B, 47C, 47D—Second control terminal, 48—Control terminal support body (Terminal support body), 48A—First support portion, 48B—Second support portion, 481—Insulating layer, 482—First metal layer, 482A—First part, 482B—Second part, 482C—Third part, 482D—fourth part, 482E—fifth part, 482F—sixth part, 483—second metal layer, 49—joining material, 5—first conductive component, 51—main part 51, 514—first opening, 52—first joining part, 53—second joining part, 59—conductive joining material, 6—second conductive component, 602—first step part, 603—second step part, 61—third joining part, 611—flat part, 612—first inclined part, 64—first path part, 641—first strip-shaped part, 643—first extension part, 649—recess, 65—second path part, 651—second strip-shaped part, 653—second extension part, 659—recess, 66—third path part , 669—recess, 67—fourth path portion, 69—conductive bonding material, 71, 72, 73, 74—metal wire, 8—sealing resin, 81—resin main surface, 810—first recess, 811—inner side surface of recess, 812—bottom surface of recess, 813—end edge of recess, 814—cylindrical inner side surface, 815—conical inner side surface, 82—resin back surface, 831, 832—resin side surface, 832a—recess, 833, 834—resin side surface, 851—protrusion, 851a—protrusion end surface, 851b—recess, 851c—inner wall surface, 852—first protrusion, 852a—top surface of protrusion, 89—first resin filling portion, L1—first size, L2—second size.

[0445] (Explanation of Symbols in the Second Scheme)

[0446] B1, B11, B12, B13, B14, B15—semiconductor device, 11—support substrate, 111—insulating layer, 112—support conductor, 1120—main surface, 1121—first conductive portion, 1122—second conductive portion, 113—back metal layer, 13—power terminal, 14—first power terminal, 15—second power terminal, 16—third power terminal, 21—semiconductor element, 21A—first element (first switching element), 21B—second element (second switching element), 211—first electrode, 212—second electrode, 213—third electrode, 21 4—fourth electrode, 22—thermistor, 23—conductive bonding layer, 31—first conductive component, 310—through hole, 311—main body, 312—first bonding portion, 313—second bonding portion, 32—second conductive component, 321—main body, 322—third bonding portion, 324—fourth bonding portion, 326—middle portion, 327—crossbeam portion, 328—hanging portion, 33—first conductive bonding layer, 34—second conductive bonding layer, 35—third conductive bonding layer, 36—fourth conductive bonding layer, 41—first metal wire, 42—second metal wire, 43—third metal wire, 4 4—fourth metal wire, 45—control terminal (terminal), 451—bracket, 452—metal pin, 453—cylindrical portion, 454—first flange portion, 454a—first surface, 455—second flange portion, 459—conductive bonding layer, 46A, 46B, 46C—first control terminal, 47A, 47B, 47C, 47D—second control terminal, 48—control terminal support body (terminal support body), 48A—first support portion, 48B—second support portion, 481—insulating layer, 482—first metal layer, 482A—first portion, 482B—second portion, 482 C—third part, 482D—fourth part, 482E—fifth part, 483—second metal layer, 49—bonding layer, 50—sealing resin, 51—resin main surface, 511—first recess, 512—inner surface of first recess, 513—first end edge, 514—second end edge, 515—chamfered portion, 517—second recess, 518—bottom surface of second recess, 52—resin back side, 531, 532, 533, 534—resin side, 531a—recess, 55—first resin portion, 91—mold, 911—cylindrical pin, 915—rounded corner, 919—cavity space.

Claims

1. A semiconductor device, characterized in that: have: at least one terminal including a conductive cylindrical bracket and a metal pin inserted into the bracket; A terminal support body, which supports the bracket; as well as a sealing resin covering a portion of the bracket and the terminal support, The sealing resin has a resin main surface facing one side in the thickness direction. The bracket has a first surface located at an end portion on one side in the thickness direction and a first outer surface extending in the thickness direction. The first surface is located at a position different from that of the resin main surface in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pin protrudes toward one side in the thickness direction beyond the resin main surface.

2. The semiconductor device according to claim 1, wherein: The bracket includes a cylindrical portion extending in the thickness direction and a first flange portion connected to an end portion of the cylindrical portion on one side in the thickness direction. The first flange portion includes the first surface facing one side in the thickness direction, and a second surface located closer to the other side in the thickness direction than the first surface and facing the other side in the thickness direction. The cylindrical portion has the first outer side surface. The first outer side surface and the second side are entirely in contact with the sealing resin.

3. The semiconductor device according to claim 2, wherein: The sealing resin has a first recessed portion that is recessed from the resin main surface toward the other side in the thickness direction. The first flange portion is located on the other side of the thickness direction relative to the resin main surface. The first recessed portion overlaps the entirety of the cylindrical portion when viewed in the thickness direction.

4. The semiconductor device according to claim 3, wherein: At least a portion of the first surface is exposed from the sealing resin.

5. The semiconductor device according to claim 4, wherein: The entire first surface is exposed from the sealing resin. The first recess has an inner side surface of the recess connected to the resin main surface, and a bottom surface of the recess connected to an end of the inner side surface of the recess on the other side in the thickness direction and facing one side in the thickness direction. The recessed portion bottom surface surrounds the first surface when viewed in the thickness direction.

6. The semiconductor device according to claim 3, wherein: The first recess has a recess end edge that is located on the other side in the thickness direction and is in contact with the first surface.

7. The semiconductor device according to claim 6, wherein: The first recess has a tapered inner side surface connected to the end edge of the recess. The tapered inner side surface is inclined so that an inner diameter dimension increases toward one side in the thickness direction.

8. The semiconductor device according to claim 6, wherein: The outer peripheral edge of the first flange portion surrounds the first recessed portion when viewed in the thickness direction.

9. The semiconductor device according to any one of claims 3 to 8, characterized in that A first dimension, which is a distance between the resin main surface and the first surface in the thickness direction, is smaller than a second dimension, which is a length of the bracket in the thickness direction.

10. The semiconductor device according to claim 9, wherein: The ratio of the first dimension to the second dimension is 1 / 3 or more.

11. The semiconductor device according to any one of claims 3 to 10, characterized in that The invention further includes a first resin filling portion that is filled in the first recessed portion.

12. The semiconductor device according to claim 2, wherein: The sealing resin includes a first protrusion that protrudes from the resin main surface toward one side in the thickness direction. A portion of the first outer side surface and the entirety of the second surface are in contact with the first protrusion.

13. The semiconductor device according to claim 12, wherein: The first protrusion has a protrusion top surface facing one side in the thickness direction. The top surface of the protrusion surrounds the first surface when viewed in the thickness direction. The first surface is flush with the top surface of the protruding portion.

14. The semiconductor device according to claim 1 or 2, characterized in that: The device further comprises: a supporting conductor that supports the terminal supporting body; and at least one semiconductor element that is electrically connected to the at least one terminal. The at least one semiconductor element is supported by the supporting conductor.

15. The semiconductor device according to claim 14, wherein: The at least one terminal is a control terminal for controlling the at least one semiconductor element.

16. The semiconductor device according to claim 15, wherein: The supporting conductor includes a first conductive portion and a second conductive portion, the first conductive portion and the second conductive portion are spaced apart in a first direction orthogonal to the thickness direction. The at least one semiconductor element includes a first switch element connected to the first conductive portion and a second switch element connected to the second conductive portion. The control terminal includes a first control terminal for controlling the first switch element and a second control terminal for controlling the second switch element. The terminal support body includes a first support portion supporting the first control terminal and a second support portion supporting the second control terminal.

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