Substrate holding apparatus, film forming apparatus, and method for manufacturing electronic device

Abstract

The invention relates to a substrate holding apparatus, a film forming apparatus, and a method of manufacturing an electronic device. Temperature control can be stably performed in a film forming apparatus. This substrate holding device is used in a film forming device that forms a film on a substrate, and is provided with: an electrostatic chuck (C1) that adsorbs the substrate; and a temperature adjustment tube (TP) inside which a temperature adjustment medium for adjusting the temperature of the electrostatic chuck flows, the electrostatic chuck (C1) having a temperature adjustment tube installation part (253) in which the temperature adjustment tube (TP) is installed such that at least a part of the temperature adjustment tube (TP) is embedded inside the electrostatic chuck (C1).

Description

Technical Field

[0001] The present invention relates to a substrate holding device for a film forming device, a film forming device and a method for manufacturing an electronic device. Background Art

[0002] In recent years, flat panel display devices such as organic EL display devices have been used as display screens for monitors, televisions, and smartphones. The panel of an organic EL display device has a structure in which a light-emitting organic layer is formed between two opposing electrodes (cathode electrode and anode electrode). When an organic EL display panel is formed using a film forming device, the peripheral edge of the substrate is held by a substrate holder arranged in the chamber of the film forming device, and an evaporation source arranged at the bottom of the chamber is heated to release a metal or organic evaporation material, which is evaporated on the lower surface of the substrate through a mask.

[0003] Here, the central portion of the substrate held by the peripheral portion may bend due to its own weight. As the size of the substrate increases, the deflection of the central portion becomes greater, and the influence on the evaporation accuracy also becomes greater. As a method for reducing the deflection of such a substrate, Patent Document 1 proposes a technology for holding the substrate using an electrostatic chuck (ESC).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2019-099910

[0007] Problems to be solved by the invention

[0008] The temperature of the evaporation source in the film forming chamber is very high, and there is a large temperature difference between the evaporation source and other components in the film forming chamber. Therefore, it is difficult to control the temperature of the electrostatic chuck, substrate, and mask, and they may deform and change size due to thermal expansion. Due to the influence of this dimensional change, there is a possibility of reduced alignment accuracy and reduced film quality. Summary of the invention

[0009] An object of the present invention is to provide a technology capable of stably controlling the temperature in a film forming apparatus.

[0010] Means for solving problems

[0011] In order to solve the above-mentioned problems, the substrate holding device of the present invention is used in a film forming device for forming a film on a substrate, and is characterized in that the substrate holding device comprises:

[0012] an electrostatic chuck that absorbs the substrate; and

[0013] A temperature regulating tube, in which a temperature regulating medium for regulating the temperature of the electrostatic chuck flows,

[0014] The electrostatic chuck includes a temperature regulating tube installation portion that installs the temperature regulating tube in a manner such that at least a portion of the temperature regulating tube is buried inside the electrostatic chuck.

[0015] In order to solve the above-mentioned problems, the substrate holding device of the present invention is used in a film forming device for forming a film on a substrate, and is characterized in that the substrate holding device comprises:

[0016] An electrostatic chuck that absorbs the substrate;

[0017] a temperature regulating tube in which a temperature regulating medium for regulating the temperature of the electrostatic chuck flows; and

[0018] A temperature regulating tube installation component is fixed to a surface of the electrostatic chuck opposite to a suction surface for adsorbing the substrate, and at least a portion of the temperature regulating tube is buried inside the temperature regulating tube installation component.

[0019] Effects of the Invention

[0020] According to the present invention, it is possible to stably perform temperature control in a film forming apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic plan view showing the structure of a film forming apparatus.

[0022] Figure 2 It is a cross-sectional view showing the internal structure of the film forming chamber.

[0023] Figure 3 This is a schematic diagram showing an example of a production line for an organic EL display device.

[0024] 4(a) and (b) are schematic cross-sectional views for explaining the structure of the temperature adjustment mechanism according to the first embodiment of the present invention.

[0025] Figure 5 It is a schematic cross-sectional view for explaining the structure of a temperature adjustment mechanism of a comparative example.

[0026] Figure 6 This is a schematic diagram showing an example of temperature adjustment control in an organic EL production line.

[0027] Figure 7 It is a schematic cross-sectional view for explaining the structure of the temperature adjustment mechanism according to the second embodiment of the present invention.

[0028] Figure 8It is a schematic cross-sectional view for explaining the structure of the temperature adjustment mechanism according to the third embodiment of the present invention.

[0029] Fig. 9 (a) and (b) are diagrams for explaining a method for manufacturing an electronic device.

[0030] Description of Reference Numerals

[0031] 1 Film forming device, S substrate, C electrostatic chuck, TM temperature regulating component, MP magnet plate, TP temperature regulating tube DETAILED DESCRIPTION

[0032] The following describes the embodiments of the present invention in detail. However, the following embodiments only exemplify the preferred structures of the present invention and do not limit the scope of the present invention to these structures. In addition, the hardware structure and software structure, processing flow, manufacturing conditions, size, material, shape, relative configuration, etc. of the device described below, as long as there is no particularly specific description, its purpose is not to limit the scope of the present invention to only these.

[0033] The present invention is applicable to a film forming device that forms a thin film of a film forming material on the surface of a film forming object such as a substrate by evaporation or sputtering. The present invention can be grasped as a temperature control mechanism, a substrate holding device and a film forming device, and a temperature control method or control method using these devices. In addition, the present invention can also be grasped as an electronic device manufacturing device and a control method thereof, and an electronic device manufacturing method. In addition, the present invention can also be grasped as a program that enables a computer to execute a temperature control method or a control method, and a storage medium storing the program. The storage medium can be a non-temporary storage medium that can be read by a computer.

[0034] As the material of the substrate in the present invention, any material such as glass, resin, metal, silicon, etc. can be used. As the film-forming material, any material such as organic material, inorganic material (metal, metal oxide) can be used. The "substrate" in the following description includes a substrate on which one or more films have been formed on the surface of the substrate material. The technology of the present invention is typically suitable for manufacturing devices for electronic devices or optical components. In particular, it is suitable for organic electronic devices such as organic EL displays having organic EL elements and organic EL display devices using the organic EL displays. The present invention can also be used for thin-film solar cells and organic CMOS image sensors.

[0035] <Implementation Method>

[0036] (Device Structure)

[0037] Figure 11 is a top view schematically showing the structure of the film forming device 1. Here, the production line of the organic EL display is described. When manufacturing the organic EL display, a substrate of a specified size is fed into the production line, and after the organic EL or metal layer is formed, a post-processing process such as cutting of the substrate is performed.

[0038] The film forming apparatus 1 includes a conveying chamber 130 disposed in the center and a plurality of film forming chambers 110 (110a to 110d) and a mask storage chamber 120 (120a, 120b) disposed around the conveying chamber 130. The film forming chamber 110 includes a chamber for performing film forming processing on a substrate S. The mask storage chamber 120 stores masks before and after use. A conveying robot 140 disposed in the conveying chamber 130 conveys the substrate S and the mask M in and out of the conveying chamber 130. The conveying robot 140 is, for example, a robot having a manipulator for holding the substrate S and the mask M mounted on a multi-jointed arm.

[0039] The passage chamber 150 conveys the substrate S conveyed from the upstream side in the substrate conveying direction to the conveying chamber 130. The buffer chamber 160 conveys the substrate S that has completed the film forming process in the conveying chamber 130 to other film forming groups on the downstream side. When the conveying robot 140 receives the substrate S from the passage chamber 150, it conveys it to one of the plurality of film forming chambers 110. The conveying robot 140 also receives the substrate S that has completed the film forming process from the film forming chamber 110 and conveys it to the buffer chamber 160.

[0040] Figure 1 The film forming apparatus 1 shown constitutes a film forming group, and can be connected to other film forming groups on the upstream side and the downstream side. A swirl chamber 170 for changing the direction of the substrate S is provided on the upstream side of the passage chamber 150 and the downstream side of the buffer chamber 160. Each chamber such as the film forming chamber 110, the mask storage chamber 120, the conveying chamber 130, the buffer chamber 160, and the swirl chamber 170 is maintained in a high vacuum state during the manufacturing process.

[0041] The film-forming materials in the multiple film-forming chambers 110a to 110d of the film-forming device 1 may be the same or different. For example, different film-forming materials may be respectively arranged in the film-forming chambers 110a to 110d, and the substrate S may be formed into a stacked structure while moving in the film-forming chambers 110a to 110d in sequence. In addition, by arranging film-forming sources of the same film-forming material in the film-forming chambers 110a to 110d, film formation may be performed on multiple substrates S in parallel. In addition, a first film-forming material may be arranged in the film-forming chambers 110a and 110c, and a second film-forming material may be arranged in the film-forming chambers 110b and 110d, and the control may be performed so that after the first layer is formed in the film-forming chamber 110a or 110c, the second layer is formed in the film-forming chamber 110b or 110d.

[0042] Depending on the type of electrostatic chuck, the adsorption force of the substrate can be increased when a conductor is attached to the substrate. In this case, when a thin film of a metal material that becomes an electrode layer has been formed in the region of the substrate where the organic EL element is formed (typically the central portion of the substrate), adsorption can be effectively performed. For example, when an organic layer is sequentially formed in film forming chambers 110b to 110d on a substrate on which an electrode layer has been formed in film forming chamber 110a, it is effective to configure an electrostatic chuck in film forming chambers 110b to 110d.

[0043] (Film Forming Room)

[0044] Figure 2 1 is a cross-sectional view showing the internal structure of the film forming chamber 110. A series of film forming processes are performed in the film forming chamber 110. The series of film forming processes refers to, for example, receiving the substrate S and the mask M from the conveying robot 140, handing over the substrate S and the mask M to the conveying robot 140, adjusting the alignment of the relative positional relationship between the substrate S and the mask M, fixing the substrate S to the mask M, and film forming. In the following description, an XYZ orthogonal coordinate system is used in which the vertical direction is set to the Z direction, and θ represents the rotation around the Z axis.

[0045] The film forming chamber 110 includes a chamber 200. During film forming, the interior of the chamber 200 is maintained in a vacuum environment or an inert gas environment such as nitrogen. An electrostatic chuck C, a magnet plate MP, a temperature control member TM, a temperature control tube TP, a substrate support 210, a mask stage 221, an evaporation source 240 (film forming source), etc. are provided inside the chamber 200.

[0046] The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate. As the mask M, for example, a metal mask formed around a metal foil with a pattern supported by a frame can be used. The mask M is set on the mask stage 221. In the structure of this embodiment, after the substrate S is positioned and placed on the mask M, film formation is performed.

[0047] The substrate support part 210 has a plurality of claw-shaped support members 210a for receiving the substrate S transported to the film forming chamber. The electrostatic chuck C is a substrate holding member inside the film forming chamber, and uses electrostatic force to hold the substrate S supported by the substrate support part 210. The electrostatic chuck C abuts against the surface of the substrate S opposite to the surface in contact with the mask M (film forming surface).

[0048] The electrostatic chuck C has a structure in which a circuit such as a metal electrode is embedded in a plate-shaped substrate made of ceramics, etc. Generally, there are types of electrostatic chucks such as gradient force type, Coulomb force type, and Johnson-Rabbeck force type according to the principle of adsorption of the substrate, but in any case, the higher the applied adsorption voltage, the higher the adsorption force can be.

[0049] It should be noted that the substrate support 210 may also have a pressing member corresponding to the support 210a. By clamping the end of the substrate S with the support 210a and the pressing member, the substrate support 210 can also hold the substrate S in addition to the electrostatic chuck C, so that the substrate S is more stable.

[0050] The magnet plate MP is provided to attract the mask M and make it close to and adsorb to the film-forming surface of the substrate S. When the substrate S adsorbed by the electrostatic chuck C and adjusted (aligned) in relative position is placed on the upper surface of the mask M (the film-forming surface of the substrate S is bonded to the mask M), the magnet plate MP is lowered from above the electrostatic chuck C and abuts against the upper surface of the electrostatic chuck C. At this time, a heat transfer component may be provided between the magnet plate MP and the electrostatic chuck C, so that the magnet plate MP abuts against the upper surface of the electrostatic chuck C through the heat transfer component. The magnet plate MP applies a magnetic force to the mask M through the electrostatic chuck C and the substrate S (the magnetic attraction is activated to attract upward (to the substrate S side)), so that the mask M is closely attached to the substrate S.

[0051] The film forming apparatus 1 of this embodiment is provided with a temperature regulating unit T as a temperature regulating mechanism (temperature control member), and the temperature regulating unit T is used to suppress the temperature rise of the substrate S during film forming and prevent the deterioration and degradation of the organic material. The temperature regulating unit T is composed of a temperature regulating component TM, a temperature regulating tube TP, etc. as an example, and the specific structure will be described later.

[0052] The evaporation source 240 is a film forming member including a container such as a crucible for storing the evaporation material, a heater, a baffle, a drive mechanism, an evaporation rate monitor, etc. It should be noted that the film forming source is not limited to the evaporation source, and a sputtering device may also be used.

[0053] An alignment stage 280, an electrostatic chuck lifting mechanism 291, a magnet plate lifting mechanism 292, and the like are provided at the upper outer portion of the chamber 200. The alignment stage 280 is a mechanism for moving the electrostatic chuck C and the magnet plate MP in the horizontal direction (XYθ direction). The electrostatic chuck lifting mechanism 291 is a mechanism for lifting the electrostatic chuck C in the Z-axis direction. The magnet plate lifting mechanism 292 is a mechanism for lifting the magnet plate MP in the Z-axis direction. Thus, the position adjustment (relative distance adjustment) of the electrostatic chuck C relative to the substrate S and the position adjustment of the magnet plate MP relative to the mask M in the direction intersecting with the plane along the film-forming surface of the substrate S can be performed.

[0054] The alignment stage 280 moves the electrostatic chuck C by driving a motor 281 based on a control signal sent from a control unit 270 described later, thereby moving the substrate S held by the electrostatic chuck C in the X direction and the Y direction and rotating it in the θ direction. It should be noted that as a driving mechanism of the alignment stage 280, a known structure such as a UVW type actuator can be used.

[0055] The electrostatic chuck lifting mechanism 291 includes a motor (not shown) for driving the electrostatic chuck lifting and lowering, an actuator (not shown) for driving the electrostatic chuck lifting and lowering, etc., to lift the electrostatic chuck C in the Z-axis direction. The magnet plate lifting mechanism 292 includes a motor (not shown) for driving the magnet plate lifting and lowering, an actuator (not shown) for driving the magnet plate lifting and lowering, etc., to lift the magnet plate MP in the Z-axis direction. The actuator is configured to receive the driving force of the motor to lift and lower the shaft supporting the electrostatic chuck C. Specific examples of the actuator include linear guides, ball screws, and the like.

[0056] The electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are mounted on the alignment stage 280. Therefore, by moving the alignment stage 280 in the horizontal direction (XYθ direction), the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 (therefore, the electrostatic chuck C and the magnet plate MP) also move in the horizontal direction (XYθ direction). As a result, for example, even if a positional deviation occurs between the substrate S and the electrostatic chuck C, the relative position between them can be adjusted. Similarly, for example, even if a positional deviation occurs between the mask M and the magnet plate MP, the relative position between them can be adjusted.

[0057] In addition, in this embodiment, the substrate support 210 and the mask stage 221 are fixed in the horizontal direction (XYθ direction) relative to the chamber 200, but are configured to be able to rise and fall in the vertical direction (Z-axis direction). The lifting mechanism for lifting the substrate support 210 and the mask stage 221 in the vertical direction is provided on the outer upper surface of the chamber 200 in a manner separate and independent from the alignment stage.

[0058] The lifting mechanism (not shown) of the substrate support 210 and the mask stage 221 is provided on a base plate (not shown) fixed to the outer upper surface of the chamber 200 and different from the base plate 282, and is separate and independent from the alignment stage 280. Therefore, even if the alignment stage 280 moves in the horizontal (XYθ) direction, the substrate support 210 and the mask stage 221 do not move in the horizontal (XYθ) direction.

[0059] In addition, in the present embodiment, a structure for adjusting the position of the substrate S (by adjusting the position of the electrostatic suction cup C) is adopted, but as long as the substrate S and the mask M can be relatively aligned, a structure for adjusting the position of the mask M or a structure for adjusting both the substrate S and the mask M may also be adopted.

[0060] When the electrostatic chuck C holds the substrate S supported by the substrate support part 210, first, the electrostatic chuck lifting mechanism 291 lowers the electrostatic chuck C so that the electrostatic chuck C contacts or is sufficiently close to the substrate S. Then, the control unit 270 controls the power supply 290 to apply a predetermined adsorption voltage to the electrode embedded in the electrostatic chuck C. Thus, the substrate S is held by the electrostatic chuck C.

[0061] Next, during alignment, the electrostatic chuck lifting mechanism 291 further lowers the electrostatic chuck C to bring the substrate S and the mask M closer together. Then, alignment is performed on the alignment stage 280 .

[0062] Here, the electrostatic chuck C in this embodiment becomes an element constituting the substrate holding device of the present invention. The elements constituting the substrate holding device of the present invention sometimes include a power supply 290, a control unit 270, an electrostatic chuck lifting mechanism 291, etc. The temperature adjustment unit T or the components of the temperature adjustment unit T described in various forms later are included in the elements constituting the substrate holding device or the film forming device of the present invention as the temperature control member in the present invention.

[0063] Next, during film formation, the evaporation source 240 releases the film forming material. When film formation is completed, the magnet plate lifting mechanism 292 raises the magnet plate MP, and the electrostatic chuck lifting mechanism 291 raises the electrostatic chuck C, and the substrate S on which film formation is completed is delivered to the transfer robot 140. Then, the voltage applied to the electrostatic chuck C is set to a predetermined peeling voltage (for example, 0V), so that the substrate S is released from being held.

[0064] A camera 262 for optically photographing and generating image data is provided at the upper portion of the outer side of the chamber 200. The camera 262 photographs through a vacuum sealing window provided in the chamber 200. In the present embodiment, a plurality of cameras 262 are provided corresponding to the four corners of the substrate S. Each camera 262 is arranged so that the photographing range includes the substrate alignment mark provided at the corner of the substrate S and the mask alignment mark provided at the corner of the mask M.

[0065] During alignment, the camera 262 captures the substrate S and the mask M, and outputs the image data to the control unit 270. The control unit 270 analyzes the captured image data and obtains the position information of the substrate alignment mark and the mask alignment mark by pattern matching processing and other methods. Then, based on the positional offset of the substrate alignment mark and the mask alignment mark, the XY direction, the moving distance, and the rotation angle θ of the substrate S are calculated. Then, the calculated movement amount is converted into the driving amount of the stepping motor or servo motor or the like of each actuator of the alignment stage 280, and a control signal is generated. It should be noted that a two-stage alignment can also be performed using a camera for coarse alignment with a low resolution but a wide field of view and a camera for fine alignment with a narrow field of view but a high resolution.

[0066] The control unit 270 is an information processing device that communicates with the components of the film forming device 1 via a control line (not shown) or wireless communication, receives data from each component, or sends a signal to each component to control the action. The control unit 270 can be composed of a computer having a processor, memory, storage, I / O, etc. In this case, the function of the control unit 270 is realized by executing a program stored in the memory or storage by the processor. As a computer, a general-purpose personal computer can be used, or an embedded computer or PLC (programmable logic controller) can be used. Alternatively, part or all of the functions of the control unit 270 can also be composed of a circuit such as ASIC or FPGA. It should be noted that the control unit 270 can be set for each film forming chamber, or a plurality of film forming chambers can be controlled by one control unit 270.

[0067] The power supply 290 is a high-voltage power supply device that can supply voltage to each component of the film forming device 1 via a conductive line not shown. The power supply 290 controls the polarity and magnitude of the applied voltage according to the instruction from the control unit 270. The power supply 290 can be said to be a voltage supply member. By controlling the polarity and magnitude of the applied voltage (adsorption voltage) applied to the electrode of the electrostatic suction cup C, the adsorption force on the substrate S can be controlled. It should be noted that the power supply 290 and the control unit 270 can also be considered to constitute the power supply of the film forming device 1.

[0068] It should be noted that the application of the present invention is not limited to the above-mentioned group-type film forming apparatus, but can also be applied to an in-line film forming apparatus in which a plurality of chambers are connected in a vacuum manner and a substrate held on a substrate carrier is moved between chambers while film formation is performed.

[0069] (Production line for organic EL display devices)

[0070] Figure 3An example of a production line for an organic EL display device is shown. Figure 3 The production line shown is a 5 Figure 1 The production line shown includes a film forming group (film forming apparatus) 1 (film forming groups 1 - 1 to 1 - 5 ) having four film forming chambers 110 and a film forming group 1 (film forming group 1 - 6 ) having two film forming chambers 110 connected in series.

[0071] Among the five film forming groups 1-1 to 1-5, the four film forming groups 1-1 to 1-4 upstream of the production line constitute the first organic vapor deposition unit 102 on the production line for forming a total of eight organic layers, and in each film forming group, two organic layers are formed on the substrate S. The film forming group 1-5 downstream of the first organic vapor deposition unit 102 constitutes the metal vapor deposition unit 103 on the production line, and two metal layers are formed on the substrate S. The film forming group 1-6 downstream of the production line constitutes the second organic vapor deposition unit 104 on the production line, and one organic layer is formed on the substrate S.

[0072] In the production line of the organic EL display device, the substrate S is first put into the pre-processing unit 101, and after the required pre-processing steps are carried out, it is transported to the post-processing step via the first organic vapor deposition unit 102, the metal vapor deposition unit 103, and the second organic vapor deposition unit 104. Figure 3 In the production line shown, the substrate S is sent to the subsequent process via, for example, the path A or the path B indicated by the arrows in the figure.

[0073] The substrate S is heated in each of the vapor deposition units 102 to 104. That is, the substrate S is repeatedly heated while passing through the production line. Generally, in order to evaporate the vapor deposition source, the vapor deposition source is heated to about 450° C. in the formation of an organic film, and the vapor deposition source is heated to about 1300° C. in the formation of a metal film.

[0074] Assuming that in the above production line, the temperature of the substrate S in the organic vapor deposition chamber rises by 0.1°C, and the temperature of the substrate S in the metal vapor deposition chamber rises by 0.3°C, since there is almost no heat dissipation in a vacuum environment, the substrate S put into the pre-treatment unit 101 at 23°C is vapor-deposited 11 times and rises to 24.5°C. If the thermal expansion coefficient of a normal glass substrate is set to 3.8×10^-6 / m / °C, it will stretch by 3.8×10^-6×24.5°C=93.1μm per 1m. In addition, when moving from an organic vapor deposition chamber to the next organic vapor deposition chamber, it also stretches by 3.8×0.1=0.38μm / m. In the G8H size glass substrate classified as a large size, the long side is 2.5m, and it also stretches by 0.38×2.5=0.95μm under a temperature change of 0.1°C.

[0075] If the above-mentioned dimensional changes occur, for example, even if the substrate S and the mask M are aligned at ±2.0 μm, the elongation of the substrate S may cause a deviation, resulting in a decrease in alignment accuracy. Furthermore, due to the decrease in alignment accuracy, the film quality will be reduced, and it may not be possible to obtain a good evaporation result. In addition, the dimensional changes caused by the high temperature during evaporation may also occur in the electrostatic chuck C. Therefore, the dimensional changes of the electrostatic chuck C will also overlap, and the decrease in alignment accuracy may further increase.

[0076] (Temperature adjustment mechanism)

[0077] In order to suppress the influence of the elongation of the substrate S on the organic EL production line, the film forming device 1 in this embodiment is provided with a temperature regulating mechanism (temperature regulating member) for controlling the temperature of the electrostatic chuck C to which the substrate S is attached, as a member for controlling the temperature of the substrate S. By regulating the temperature of the electrostatic chuck C, the heat given to the substrate S by evaporation is absorbed by the electrostatic chuck C, thereby suppressing the temperature rise of the substrate S. Furthermore, the temperature of the substrate S before being put into the next process is controlled to be reduced to an appropriate input temperature in the next process, and then the substrate S is sent to the next process. It should be noted that an example of a temperature rise of the substrate is shown here, but the temperature of the substrate sometimes decreases during the transportation process. In this case, the substrate S is controlled to be sent to the next process after the temperature is increased to an appropriate input temperature in the next process. It is not limited to maintaining the temperature of the substrate at a constant level, and different target substrate temperatures can also be controlled in each chamber. According to the purpose, the temperature regulating member appropriately adopts a method of both heating and cooling, a method of only heating, and a method of only cooling.

[0078] Hereinafter, as specific configuration examples of the temperature control mechanism, the temperature control units T1 and T2 and the electrostatic chucks C1 and C2 of Examples 1 and 2 are shown. In addition, in order to explain the effects of the present embodiment, the temperature control unit T0 and the electrostatic chuck C0 of the comparative example are shown.

[0079] <Example 1>

[0080] Fig. 4(a) is a schematic cross-sectional view for explaining the structure of the temperature adjustment mechanism of Example 1 of the present invention. Fig. 4(b) is a schematic cross-sectional view for showing details of a temperature adjustment tube installation portion of the temperature adjustment tube TP provided in the electrostatic chuck C1.

[0081] As shown in FIG. 4( a ), the temperature control member in the film forming apparatus 1 of the present embodiment includes a temperature control unit T1. The temperature control unit T1 includes a temperature control component TM, a non-magnetic metal component MM, a temperature control tube TP, etc. As elements constituting the temperature control member, in addition to the temperature control unit T1, a temperature sensor TS1, a temperature sensor TS2 (see Figure 2), a magnet plate MP as a first heat transfer component, an electrostatic chuck C1 as a second heat transfer component, etc.

[0082] (Temperature Control ComponentsTM)

[0083] The temperature control member TM of this embodiment is a plate-shaped temperature control member in which a Peltier element is assembled. The temperature control member TM is provided integrally with the magnet plate MP and is raised and lowered together with the magnet plate MP. Specifically, the temperature control member TM is arranged in contact with the upper surface of the base plate BP of the magnet plate MP (the surface on the opposite side of the surface facing the electrostatic chuck C1).

[0084] In addition, in this embodiment, the temperature control member TM is divided into a plurality of parts. That is, a plurality of temperature control members TM are arranged at equal intervals on the upper surface of the base plate BP of the magnet plate MP. It should be noted that the temperature control member TM may be formed of a single member in such a manner that the temperature control member TM covers substantially the entire area of ​​the upper surface of the base plate BP and contacts the upper surface of the base plate BP. That is, the structure of the temperature control member TM is not limited to the structure shown in FIG. 4( a).

[0085] Here, the Peltier element is a plate-shaped element in which P-type semiconductors and N-type semiconductors are arranged alternately. When a direct current flows through the Peltier element, heat moves between the two sides of the element, causing one side to generate heat and the temperature to rise, while the other side on the opposite side absorbs heat and the temperature drops. By switching the direction of the current input to the Peltier element, heating and cooling can be performed. Generally, the Peltier element has a fast response among temperature control elements and can be switched at high speed, so it can perform high-precision temperature control.

[0086] (Non-magnetic metal parts MM)

[0087] The non-magnetic metal component MM of this embodiment is a heat transfer component with a higher thermal conductivity than the electrostatic chuck C1 and the magnet plate MP. The non-magnetic metal component MM is mounted on the lower surface of the base plate BP of the magnet plate MP and protrudes toward the electrostatic chuck C1. The non-magnetic metal component MM protrudes downward from the magnet MG mounted on the lower surface of the base plate BP, and when the magnet plate MP descends, the front end surface of the non-magnetic metal component MM is in contact with the upper surface 261 of the electrostatic chuck C1. Although a gap is formed between the magnet MG and the upper surface 261 of the electrostatic chuck C1, the height of the magnet MG is configured to fully ensure the magnetic attraction of the mask M.

[0088] The plurality of magnets MG of the magnet plate MP are not evenly arranged in the entire area relative to the upper surface 261 of the electrostatic chuck C1, and there may be a case where the arrangement is biased. In addition, from the perspective of temperature transfer, it is also possible that the arrangement structure cannot ensure a sufficient contact area. That is, in the magnet plate MP, at least the magnet MG is a component configured for the first purpose of ensuring the magnetic attraction effect of the mask M. Therefore, from the perspective of temperature regulation, it is preferred to configure a non-magnetic metal component MM separately from the magnet MG for the first purpose of ensuring heat conductivity.

[0089] (Electrostatic chuck C1)

[0090] The electrostatic chuck C1 is a component that contacts the substrate S as the temperature adjustment object. From the perspective of temperature adjustment of the substrate S, it can be understood as a heat transfer component that is responsible for heat transfer between the substrate S and the temperature adjustment component TM. The electrostatic chuck C1 has a structure in which a positive electrode 251 and a negative electrode 252 are embedded in a base material 250 composed of ceramics or the like. The positive electrode 251 and the negative electrode 252 are connected to the power supply 290, and a voltage of a desired magnitude is applied to them under the control of the control unit 270, so that an adsorption force corresponding to the magnitude of the voltage is generated to attract the substrate S.

[0091] (Temperature Control Tube TP)

[0092] The electrostatic chuck C1 of the present embodiment has a recess 253 as a temperature regulating tube installation portion, and the temperature regulating tube installation portion is provided with the temperature regulating tube TP in a manner that a part of the temperature regulating tube TP is buried inside. A plurality of recesses 253 are provided on the upper surface 261 (the surface on the opposite side of the adsorption surface 260 of the electrostatic chuck C that adsorbs the substrate S) of the base material 250 of the electrostatic chuck C1, and a temperature regulating tube TP as a cooling member is provided in each recess 253. By circulating a cooling liquid as a refrigerant in the temperature regulating tube TP, the substrate S is cooled through the electrostatic chuck C1. That is, the temperature regulating tube TP of the present embodiment is a temperature regulating component (temperature control member) for performing temperature regulation of the substrate S, and is an element constituting the temperature regulating unit T1.

[0093] It should be noted that the temperature regulating medium (temperature regulating medium) flowing in the temperature regulating pipe TP is not limited to liquid, but may also be gas. In addition, a high-temperature fluid may flow instead of cooling water, and the temperature regulating pipe TP may be used as a heating member. That is, as the temperature regulating medium flowing in the temperature regulating pipe TP, various liquids or gases may be used according to the purpose. As a structure for circulating the temperature regulating medium in the temperature regulating pipe TP, a known circulation mechanism such as a rotary joint having a hollow rotating shaft with a supply path and a discharge path provided inside can be used.

[0094] FIG4(b) is a detailed diagram showing the structure of the temperature regulating tube TP and the recess 253. The recess 253 is a groove-shaped setting portion formed along the outer peripheral surface of the temperature regulating tube TP, and is recessed downward from the upper surface 261 of the electrostatic chuck C1. On the upper surface 261, a plurality of recesses 253 extending in the Y direction are arranged at equal intervals in the X direction in a manner avoiding the contact surface of the upper surface 261 that contacts the non-magnetic metal part MM. Through the recess 253, the lower half of the outer peripheral surface of the temperature regulating tube TP is buried in the substrate 250 of the electrostatic chuck C1.

[0095] The temperature regulating tube TP is arranged in the recess 253 via a thermally conductive adhesive or grease. In Example 1, the temperature regulating tube TP is fixed to the recess 253 by a thermally conductive adhesive 231. By providing a thermally conductive material such as an adhesive 231 between the temperature regulating tube TP and the recess 253, the temperature of the electrostatic chuck C1 can be efficiently regulated. In addition, the shape, material, etc. of the temperature regulating tube TP are not particularly limited, but from the perspective of cooling, it is preferred to use a material with a high thermal conductivity. In addition, as shown in Example 1, in the case of a structure in which the mask M is attracted to the substrate S using a magnet plate MP, the temperature regulating tube TP is preferably made of a non-magnetic body such as a titanium alloy or an aluminum alloy.

[0096] In order to explain the effects obtained by providing the temperature control tube TP in the electrostatic chuck C1 as described above, the structure of a comparative example will first be described. Figure 5 : is a schematic cross-sectional view illustrating the structure of the temperature control mechanism of the comparative example. The difference between the comparative example and the first embodiment is that the temperature control tube TP is not provided in the electrostatic chuck C1, and a cooling plate CP is provided as a temperature control component instead of the temperature control tube TP. The cooling plate CP is configured to contact the upper surface of the temperature control component TM (the surface on the opposite side of the surface in contact with the magnet plate MP). That is, the temperature control component TM is configured to be sandwiched between the magnet plate MP and the cooling plate CP in the Z-axis direction, and is configured to directly perform heat exchange between the magnet plate MP and the cooling plate CP.

[0097] The cooling plate CP is a plate-shaped cooling member made of, for example, stainless steel, and has a water path WP as a cooling pipe inside thereof for flowing a refrigerant. The water path WP is configured to circulate cooling water as a refrigerant between the chamber 200 and the outside, and to absorb the heat applied to the cooling plate CP with the cooling water and discharge it to the outside. The water path WP may be formed by a through hole provided in the cooling plate CP, or by burying a pipe inside the cooling plate CP.

[0098] In the structure of the comparative example, heat is transferred between the cooling plate CP and the electrostatic chuck C0 via the base plate BP of the magnet plate MP and the non-magnetic metal member MM. On the other hand, in the structure of the first embodiment, since heat is directly transferred between the temperature regulating tube TP and the electrostatic chuck C1, the temperature of the electrostatic chuck C1 can be more efficiently regulated.

[0099] In addition, in the case of a structure in which a hollow portion is provided inside a component as in the comparative example, a manufacturing method is generally adopted in which a groove is formed on a base component and then a cover component is covered on the base component for connection by brazing or welding. On the other hand, in the structure of Example 1, since it is sufficient to form a groove on the substrate 250 of the electrostatic chuck C1, temperature regulation can be efficiently performed with a simple structure, which has advantages in terms of manufacturing difficulty and manufacturing cost. In addition, in the case of a structure in which a tube is not provided on the electrostatic chuck C and the hollow portion itself is used as a flow path, if the bonding state between the base component and the cover component is poor, the temperature regulating medium may leak. On the other hand, since Example 1 is a structure in which the temperature regulating medium passes through the inside of the temperature regulating tube TP, the possibility of leakage of the temperature regulating medium in the evacuated chamber 200 can be greatly reduced, and the film forming action and temperature control can be stably performed.

[0100] In addition, in the structure of Example 1, since it is not necessary to ensure the bonding surface between the base member and the cover member as in the comparative example, the arrangement interval of the temperature control tubes TP can be reduced compared with the comparative example. Furthermore, the number of flow paths can be increased to improve the temperature control efficiency.

[0101] It should be noted that, in the first embodiment, as described above, the temperature control unit T1 is configured to include both the temperature control component TM and the temperature control tube TP, but it is not necessarily necessary to provide both components. For example, in a film forming environment or film forming device structure that does not require high responsiveness or fine adjustment, a water-cooled temperature control structure that omits the temperature control component TM and only provides the temperature control tube TP may be adopted. By omitting the temperature control component TM (and the power supply circuit unit that controls it), a cost advantage can be obtained.

[0102] (Temperature sensor TS1)

[0103] The temperature sensor TS1 (first temperature detection member) detects the temperature of the electrostatic chuck C1, is assembled to the base 250 of the electrostatic chuck C1, and is configured to transmit the detected temperature to the control unit 270. For example, a thermistor or a diode can be used as the temperature sensor TS1.

[0104] In this embodiment, the temperature sensor TS1 is always used to monitor the temperature of the electrostatic chuck C1 to which the substrate S is attached. The temperature of the substrate S rises due to the heat energy of the vapor deposition, and the heat energy is transferred to the electrostatic chuck C1. The temperature of the electrostatic chuck C1 at this time is detected by the temperature sensor TS1 and fed back to the cooling operation performed by the temperature control unit T1.

[0105] (Temperature sensor TS2)

[0106] The temperature sensor TS2 (second temperature detection member) is a temperature sensor that detects the temperature of the mask M. Figure 2 As shown, the temperature sensor TS2 is provided on the side wall of the chamber 200 and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS2, for example, a radiation thermometer that measures the temperature of the mask M based on electromagnetic waves (light) emitted from the mask M can be used.

[0107] (Temperature Control Department)

[0108] The control unit 270 includes a current supply unit that causes current to flow to the Peltier element of the temperature control unit TM based on the power supplied from the power supply 290. The control unit 270, as a control unit in the temperature control member, controls the temperature (heat exchange state) of the temperature control member TM by controlling the current flowing from the current supply unit to the Peltier element of the temperature control member TM. The control unit 270 can be considered to be included in the structure (temperature control unit) of the temperature control member of the present invention together with the power supply 290.

[0109] The control unit 270 controls the temperature adjustment unit TM based on the detected temperature of the temperature sensor TS1 and the detected temperature of the temperature sensor TS2. Specifically, for example, when the substrate S is formed across multiple film forming chambers, the temperature of the electrostatic chuck C1 of the current film forming chamber (first film forming chamber) is controlled so that the temperature is close to the temperature of the mask M of the next film forming chamber (second film forming chamber). At this time, the temperature sensor TS2 of the chamber 200 of the next film forming chamber is used to detect the temperature of the mask M of the next film forming chamber (second film forming chamber).

[0110] That is, the temperature of the electrostatic chuck C1 (first electrostatic chuck) of the current film forming chamber (first film forming chamber) is monitored by the temperature sensor TS1 (first temperature sensor) of the electrostatic chuck C1 (first electrostatic chuck) of the current film forming chamber (first film forming chamber). And, the temperature of the mask M (second mask) of the next film forming chamber (second film forming chamber) is detected by the temperature sensor TS2 (second temperature sensor) of the next film forming chamber (second film forming chamber). Then, the current application of the temperature adjustment component TM (first temperature adjustment component) of the current film forming chamber (first film forming chamber) is controlled so that the detected temperature of the temperature sensor TS1 (first temperature sensor) approaches the detected temperature of the temperature sensor TS2 (second temperature sensor).

[0111] In addition, in order to control the temperature of the electrostatic chuck C1, a medium adjustment member may be provided that can adjust the temperature, circulation speed, etc. of the temperature adjustment medium flowing in the temperature adjustment tube TP through the control unit 270. For example, when the temperature difference between the electrostatic chuck C1 of the current film forming chamber (the first film forming chamber) and the temperature of the mask M of the next film forming chamber (the second film forming chamber) is large, the temperature of the temperature adjustment medium may be lowered or the circulation speed may be increased. With such a structure, more efficient temperature adjustment can be performed.

[0112] Figure 6 FIG. 1 is a schematic diagram showing an example of temperature control in an organic EL production line. In an organic EL production line, it is sometimes required to make the temperature of the substrate S consistent with the temperature in the chamber 200 in each process or the temperature of the mask M in each process. Figure 6 As shown, in each film forming group 1-1 to 1-6, the temperature of the mask M may be different due to differences in film forming conditions. Figure 3 As can be seen from the comparison of the temperature rise of the substrate S in the case of the temperature adjustment control of the present embodiment shown, the temperature difference between the substrate S and the mask M becomes more significant, particularly in the second half of the production line.

[0113] According to this embodiment, the temperature of the electrostatic chuck C1, that is, the temperature of the substrate S, the temperature in each chamber 200, and the temperature of the mask M can be made consistent. That is, according to this embodiment, the temperature of the substrate S can be controlled to be consistent with the temperature in the chamber 200. Figure 6 The temperatures of the masks M in the film formation groups 1 - 1 to 1 - 6 shown are the same.

[0114] (Other heat transfer components)

[0115] The magnet plate MP is a member in contact with the electrostatic chuck C1 and can be understood as a heat transfer member that transfers heat between the substrate S and the temperature control member TM together with the electrostatic chuck C1, depending on the specific form of the temperature control unit T. That is, it can be considered to be included in the structure of the temperature control member of the present invention.

[0116] The magnet plate MP is a magnetic force generating member composed of a base plate BP and a plurality of magnets MG. The plurality of magnets MG are arranged at equal intervals and attached to the lower surface of the base plate BP (the surface on the side facing the electrostatic chuck C1 in the base plate BP). Each magnet MG is configured as a protrusion protruding in the Z-axis direction from the lower surface of the base plate BP toward the side where the electrostatic chuck C1 is arranged, and its front end surface is in contact with the upper surface 261 of the electrostatic chuck C1.

[0117] The plurality of magnets MG attract the mask M toward the substrate S (Z-axis direction) by their magnetic force, and their arrangement is not particularly limited, and for example, sometimes an arrangement corresponding to the frame shape of the mask M is adopted. That is, sometimes the arrangement is not evenly dispersed corresponding to the entire area of ​​the upper surface 261 of the electrostatic chuck C1, but a biased arrangement is used.

[0118] (Structural features of temperature adjustment unit T1)

[0119] The temperature control unit T1 of this embodiment is configured to control the temperature of the electrostatic chuck C1 while monitoring the temperature of the electrostatic chuck C1 and the temperature of the mask M using a temperature control component composed of a Peltier element or the like and a temperature control tube directly provided on the electrostatic chuck C1. In addition, the temperature of the electrostatic chuck C1 is controlled via the metal component (by controlling the temperature of the metal component) by using a structure in which a non-magnetic metal component MM as a heat-conducting component is brought into contact with the electrostatic chuck C1.

[0120] (Temperature adjustment control)

[0121] The temperature control of the electrostatic chuck C1 by the temperature control unit T1 can achieve the greatest effect when the magnet plate MP is lowered from the position away from the electrostatic chuck C1 (the first position) and is located at the position (the second position) in contact with the electrostatic chuck C1 (via the non-magnetic metal member MM). The magnet plate MP is brought into contact with the electrostatic chuck C1 (lowered), typically after the aligned substrate S is placed on the mask M, that is, when the mask M is brought into close contact with the substrate S by the magnetic force of the magnet plate MP, in the film forming process.

[0122] In the temperature adjustment unit T1, in particular, the timing or period for controlling the temperature adjustment component TM (Peltier element) is typically when the evaporation source 240 releases the film-forming material, that is, when the substrate S is exposed to the highest temperature. In addition, after the film formation is completed, the state in which the magnet plate MP is in contact with the electrostatic chuck C1 may be maintained, that is, the state in which the substrate S is kept in close contact with the mask M. For example, if the film formation device is equipped with a baffle, the baffle is set to be closed and the temperature adjustment is continued. Alternatively, the temperature adjustment may not be performed during the film formation, and after the film formation is completed, the magnet plate MP is kept in contact with the electrostatic chuck C1 before the temperature adjustment is started.

[0123] In addition, the temperature adjustment based on the control of the temperature adjustment component TM (Peltier element) may be performed at a different timing from the film forming operation. For example, the temperature of the electrostatic chuck C1 may be controlled by bringing the magnet plate MP into contact with the electrostatic chuck C1 during the process of transporting the substrate S before and after the film forming operation. That is, the magnet plate MP may be brought into contact (descended) with the electrostatic chuck C1 without the adsorption of the mask M to the substrate S, and the temperature adjustment may be performed based on the control of the temperature adjustment component TM (Peltier element).

[0124] In addition, the temperature adjustment control performed by the temperature adjustment unit T1 typically cools the substrate S. However, for example, Figure 5 In the film forming production line shown, when the temperature of the substrate S is lower than the temperature of the mask M, the electrostatic chuck C1 may be heated by the operation of the Peltier element of the temperature control unit TM. Therefore, the temperature control unit TM is not limited to the Peltier element, and a heater composed of a heating wire or the like may be used. In addition, the heating efficiency of the electrostatic chuck C1 may be improved by causing a high-temperature medium to flow in the temperature control tube TP.

[0125] In addition, as described above, one of the purposes of the temperature adjustment control performed by the temperature adjustment unit T1 is to Figure 5 In the process of a series of film forming lines (multiple film forming operations across multiple film forming chambers) shown, the temperature of the substrate S is adjusted according to the temperature of the mask M used in the next film forming. However, the purpose of temperature control by the temperature adjustment unit T1 is not limited to the above purpose.

[0126] For example, depending on the characteristics of the film deposited on the substrate S, it is sometimes required to reduce the temperature of the substrate S as much as possible or to increase the temperature of the substrate S. In this case, in a film forming chamber, the temperature of the electrostatic chuck C1 (i.e., the substrate S) can also be controlled by the temperature adjustment unit T1 based on the detected temperature of the electrostatic chuck C1.

[0127] In addition, the cooling or heating based on the Peltier element changes the temperature of the component in contact with the temperature regulating part TM, and then the temperature of other components in contact with the component also changes in a chain manner through heat conduction. That is, by cooling the magnet plate MP by the temperature regulating part TM, the non-magnetic metal component MM in contact with the magnet plate MP, the electrostatic chuck C1 in contact with the non-magnetic metal component MM, and the substrate S in contact with the electrostatic chuck C1 are cooled in sequence. And, by flowing cooling water in the temperature regulating tube TP provided in the electrostatic chuck C1, the temperature regulating tube TP, the electrostatic chuck C1 in contact with the temperature regulating tube TP, and the substrate S in contact with the electrostatic chuck C1 are also cooled in sequence. And, of course, the mask M in contact with the substrate S is also cooled (the temperature regulating part TM is a temperature control member that controls the temperature of each of the above components).

[0128] The heat sources in the film forming chamber are the vaporized film forming material and the radiant heat from the evaporation source, which mainly heat the mask M and the substrate S. The temperature of the substrate S and the mask M will eventually change due to the difference between the amount of heating energy and the cooling capacity via the electrostatic chuck C1, and a temperature gradient may be generated in which the temperature becomes higher on the side close to the evaporation source. However, when cooling is performed using the temperature adjustment unit T1 of this embodiment, the temperature rise of the mask M together with the substrate S is also suppressed compared to the case where no cooling is performed. That is, although the temperature adjustment control based on the temperature adjustment unit T1 of this embodiment is the primary focus of the temperature adjustment (cooling) of the substrate S, it can also be said that the temperature rise of the mask M is indirectly suppressed.

[0129] So, for example, with Figure 5 Unlike the film forming lines shown, when it is desired to control the temperatures of the masks M in the respective film forming chambers to be the same temperature, the temperature adjustment control by the temperature adjustment unit T1 of this embodiment can be utilized.

[0130] <Example 2>

[0131] Reference Figure 7 , the temperature adjustment unit T2 according to the second embodiment of the present invention is described. Figure 7 1 is a schematic cross-sectional view illustrating the structure of the temperature control mechanism of Example 2 of the present invention. Here, in the structure of Example 2, only the differences from the structure of Example 1 are described. In the structure of Example 2, the same reference numerals are given to the same structures as those of Example 1, and the description is omitted.

[0132] In the electrostatic chuck C2 of the second embodiment, the temperature regulating tube TP is buried inside. On the substrate 250 of the electrostatic chuck C2, instead of the recess 253 of the first embodiment, a plurality of hollow portions 254 are provided as the temperature regulating tube installation portion for installing the temperature regulating tube TP. The plurality of hollow portions 254 in which the temperature regulating tube TP is installed extend horizontally inside the substrate 250 of the electrostatic chuck C2. A thermally conductive adhesive or grease may be filled between the temperature regulating tube TP and the hollow portion 254.

[0133] In such a structure, since the temperature control medium passes through the inside of the temperature control tube TP, the possibility of leakage of the temperature control medium can be greatly reduced compared with a structure in which the hollow portion itself is used as a flow path, and temperature control can be performed stably.

[0134] In addition, by adopting a structure in which the temperature regulating tube TP is completely buried inside the substrate 250, the contact area between the temperature regulating tube TP and the substrate 250 can be increased compared to the structure of Example 1. Therefore, according to the structure of Example 2, since the heat exchange rate between the temperature regulating tube TP and the electrostatic chuck C2 is improved, the temperature regulation efficiency can be improved. That is, although the structure of Example 2 is more difficult to manufacture than the structure of Example 1, it is suitable for the case where the temperature regulation efficiency based on the temperature regulating tube TP is to be improved.

[0135] (High thermal conductivity sheet HT)

[0136] The temperature control unit T2 of the second embodiment is configured by attaching a high thermal conductivity sheet HT, which is a high thermal conductivity component having a higher thermal conductivity than the electrostatic chuck C2 and the magnet plate MP, to the base plate BP of the magnet plate MP. Instead of providing the high thermal conductivity sheet HT, the temperature control unit T2 of the second embodiment is configured by omitting the non-magnetic metal component MM of the temperature control unit T1 of the first embodiment.

[0137] The high thermal conductive sheet HT (high thermal conductive member) is a sheet member made of a material having a higher thermal conductivity than the electrostatic chuck C2 and the magnet plate MP. The high thermal conductive sheet HT is arranged in contact with the upper surface 261 of the electrostatic chuck C2 (the surface opposite to the adsorption surface 260 that adsorbs the substrate S).

[0138] By bringing the high thermal conductivity sheet HT having a higher thermal conductivity than the electrostatic chuck C2 into contact with the electrostatic chuck C2, the electrostatic chuck C2 can be efficiently cooled. This cooling effect can be obtained regardless of the size of the contact area between the high thermal conductivity sheet HT and the electrostatic chuck C2, but the larger the contact area, the higher the cooling effect.

[0139] <Example 3>

[0140] Reference Figure 8 , the temperature adjustment unit T3 of the third embodiment of the present invention is described. Figure 8 1 is a schematic cross-sectional view illustrating the structure of the temperature control mechanism of Example 3 of the present invention. Here, in the structure of Example 3, only the differences from the structure of Example 2 are described. In the structure of Example 3, the same reference numerals are given to the same structures as those of Example 2, and the description is omitted.

[0141] In the temperature regulating unit T3 of Example 3, a heat spreader EP is provided on the upper part of the high thermal conductivity sheet HT. The heat spreader EP is a temperature regulating tube setting component in which the temperature regulating tube TP is buried. Inside the heat spreader EP, a plurality of hollow portions 255 are provided as a temperature regulating tube setting portion for setting the temperature regulating tube TP. The plurality of hollow portions 255 in which the temperature regulating tube TP is set extend in the horizontal direction inside the heat spreader EP, respectively. The shape of the hollow portion 255 is not limited to a cylinder, but in order to improve the thermal conductivity, it is preferably a shape in which the contact area between the heat spreader EP and the temperature regulating tube TP becomes larger. A thermally conductive adhesive or grease may also be filled between the temperature regulating tube TP and the hollow portion 255.

[0142] The heat spreader EP is fixed to the base material 250 of the electrostatic chuck C3 by a plurality of fixing screws 256, and is integrated with the base material 250 of the electrostatic chuck C3. It should be noted that the method of fixing the heat spreader EP to the electrostatic chuck C3 via the high thermal conductivity sheet HT is not limited to this, and it can also be fixed using an adhesive or the like. The material of the heat spreader EP is preferably a material with good processability and high thermal conductivity for setting the groove or hollow part of the temperature regulating tube TP.

[0143] In the third embodiment, the temperature regulating tube TP is always fixed to the electrostatic chuck C3 and integrated. Therefore, according to the structure of the third embodiment, the temperature of the electrostatic chuck C3 can be more efficiently regulated compared with the structure in which the cooling plate CP is arranged in contact with the upper surface of the temperature regulating member TM and is appropriately separated from the electrostatic chuck C0 as in the comparative example. In this way, even if the temperature regulating tube installation portion is not provided inside the electrostatic chuck C3 but is provided inside a member fixed to the electrostatic chuck C3, and the temperature regulating tube TP is buried in the member, the temperature of the electrostatic chuck C3 can be efficiently regulated.

[0144] In addition, compared with the structures of Examples 1 and 2, the structure of Example 3 is that the temperature adjustment tube TP is set at a position away from the adsorption surface 260 of the electrostatic chuck C. By adopting the above structure, when the temperature of the electrostatic chuck C3 is adjusted by the temperature adjustment tube TP, the thermal uniformity of the adsorption surface 260 can be improved. In addition, by making the material of the heat spreader EP a material with a high thermal conductivity, the thermal uniformity in the heat spreader EP can be improved, and the thermal uniformity of the adsorption surface 260 of the electrostatic chuck C3 can be improved. In addition, the material of the heat spreader EP is selected to have a material with better processability than the material of the base material 250 of the electrostatic chuck C, thereby suppressing the increase in processing costs.

[0145] It should be noted that, in the third embodiment, the temperature regulating tube TP is disposed in the hollow portion 255 inside the heat spreader EP, but it may also be configured such that a recess is formed on the surface of the heat spreader EP and the temperature regulating tube TP is disposed in the recess. In addition, the temperature regulating tube installation component does not necessarily need to be composed of a single plate component like the heat spreader EP, and may be, for example, a structure divided into a plurality of components or composed of components other than the plate component.

[0146] <Method for manufacturing electronic device>

[0147] Next, an example of a method for manufacturing an electronic device using the film-forming apparatus of this embodiment will be described. Hereinafter, as an example of an electronic device, the structure of an organic EL display device will be described, and a method for manufacturing the organic EL display device will be described.

[0148] First, the manufactured organic EL display device will be described. Fig. 9 (a) is an overall view of the organic EL display device 700. Fig. 9 (b) shows the cross-sectional structure of a pixel.

[0149] like Fig. 9 As shown in (a), in the display area 701 of the organic EL display device 700, a plurality of pixels 702 having a plurality of light-emitting elements are arranged in a matrix. Each light-emitting element has a structure having an organic layer sandwiched by a pair of electrodes, and the details are described later. It should be noted that the pixel mentioned here refers to the smallest unit that can display the desired color in the display area 701. In the case of the organic EL display device of this embodiment, the pixel 702 is composed of a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that show different light emission from each other. The pixel 702 is mostly composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but it can also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, as long as it is at least one color, without special limitation.

[0150] Fig. 9(b) Yes Fig. 9 (a) is a partial cross-sectional schematic diagram at the BB line. The pixel 702 is composed of a plurality of light-emitting elements, each of which has a first electrode (anode) 704, a hole transport layer 705, any one of the light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Among them, the hole transport layer 705, the light-emitting layers 706R, 706G, 706B, and the electron transport layer 707 are equivalent to organic layers. In addition, in the present embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed into patterns corresponding to the light-emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light, respectively.

[0151] In addition, the first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 can be formed in common for a plurality of light-emitting elements 702R, 702G, and 702B, or can be formed for each light-emitting element. It should be noted that in order to prevent the first electrode 704 and the second electrode 708 from short-circuiting due to foreign matter, an insulating layer 709 is provided between the first electrode 704. In addition, since the organic EL layer is degraded by moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from moisture and oxygen corrosion.

[0152] exist Fig. 9 In (b), the hole transport layer 705 and the electron transport layer 707 are shown as one layer, but according to the structure of the organic EL display element, they can also be formed by multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer can also be formed between the first electrode 704 and the hole transport layer 705, and the hole injection layer has an energy band structure that can smoothly inject holes from the first electrode 704 to the hole transport layer 705. Similarly, an electron injection layer can also be formed between the second electrode 708 and the electron transport layer 707.

[0153] Next, an example of a method for manufacturing an organic EL display device will be described in detail.

[0154] First, a substrate (mother glass) 703 on which a circuit (not shown) for driving the organic EL display device and a first electrode 704 are formed is prepared.

[0155] An acrylic resin is formed by spin coating on the substrate 703 having the first electrode 704 formed thereon, and the acrylic resin is patterned by photolithography to form an opening in the portion having the first electrode 704 formed thereon to form an insulating layer 709. The opening corresponds to a light emitting region where the light emitting element actually emits light.

[0156] The substrate 703 patterned with the insulating layer 709 is placed on a substrate carrier provided with an adhesive member. The substrate 703 is held by the adhesive member. The substrate 703 is sent to the first organic material film forming device, and after being turned over, a hole transport layer 705 is formed as a common layer on the first electrode 704 of the display region. The hole transport layer 705 is formed by vacuum evaporation. In fact, since the hole transport layer 705 is formed to be larger than the display region 701, a high-precision mask is not required.

[0157] Next, the substrate 703 formed with the hole transport layer 705 is introduced into a second organic material film forming apparatus. The substrate and the mask are aligned, the substrate is placed on the mask, and a red light emitting layer 706R is formed on the portion of the substrate 703 where the element emitting red light is arranged.

[0158] Similar to the film formation of the light-emitting layer 706R, the light-emitting layer 706G emitting green light is formed by the third organic material film-forming device, and the light-emitting layer 706B emitting blue light is formed by the fourth organic material film-forming device. After the film formation of the light-emitting layers 706R, 706G, and 706B is completed, the electron transport layer 707 is formed in the entire display area 701 by the fifth film-forming device. The electron transport layer 707 is formed as a common layer in the light-emitting layers 706R, 706G, and 706B of the three colors.

[0159] The substrate on which the electron transport layer 707 has been formed is moved in a metallic vapor deposition material film forming apparatus to form a second electrode 708 .

[0160] Then, the substrate 703 is moved to a plasma CVD device to form a protective layer 710, completing the film forming process on the substrate 703. After flipping, the substrate 703 is separated from the substrate carrier by peeling the adhesive member from the substrate 703. After that, the organic EL display device 700 is completed after cutting.

[0161] If the substrate 703 having the insulating layer 709 patterned thereon is exposed to an environment containing moisture and oxygen from the time when it is introduced into the film forming apparatus until the film forming of the protective layer 710 is completed, the light-emitting layer composed of the organic EL material may be degraded by moisture and oxygen. Therefore, in this embodiment, the substrate is introduced and removed between the film forming apparatuses in a vacuum environment or an inert gas environment.

Claims

1. A substrate holding device, used for a film forming device for forming a film on a substrate, characterized in that: The substrate holding device comprises: An electrostatic chuck that absorbs the substrate; as well as A temperature regulating tube, in which a temperature regulating medium for regulating the temperature of the electrostatic chuck flows, The electrostatic chuck includes a temperature regulating tube installation portion that installs the temperature regulating tube in a manner such that at least a portion of the temperature regulating tube is buried inside the electrostatic chuck.

2. The substrate holding device according to claim 1, wherein: The electrostatic chuck comprises a substrate and an electrode embedded in the substrate. The temperature regulating tube installation portion is formed on the base material.

3. The substrate holding device according to claim 2, characterized in that: The temperature adjustment tube installation portion is a recessed portion formed on a surface of the electrostatic chuck on the opposite side to a suction surface on which a substrate is suctioned.

4. The substrate holding device according to claim 2, characterized in that: The temperature adjustment tube installation portion is a hollow portion formed inside the electrostatic chuck.

5. The substrate holding device according to claim 2, wherein: The thermal conductivity of the temperature regulating tube is higher than the thermal conductivity of the substrate.

6. The substrate holding device according to claim 1, wherein: A heat conductive material is filled between the temperature regulating tube and the temperature regulating tube installation portion.

7. A substrate holding device, used for a film forming device for forming a film on a substrate, characterized in that: The substrate holding device comprises: An electrostatic chuck that absorbs the substrate; A temperature regulating tube, in which a temperature regulating medium for regulating the temperature of the electrostatic chuck flows; as well as A temperature regulating tube installation component is fixed to a surface of the electrostatic chuck opposite to a suction surface for adsorbing the substrate, and at least a portion of the temperature regulating tube is buried inside the temperature regulating tube installation component.

8. The substrate holding device according to claim 7, characterized in that: The substrate holding device includes a heat conducting sheet provided between the electrostatic chuck and the temperature regulating tube installation member.

9. The substrate holding device according to claim 7, wherein: The temperature regulating tube is fixed to the electrostatic chuck by a plurality of fixing screws.

10. The substrate holding device according to claim 7, wherein: The temperature regulating tube is installed in a recessed portion formed on a surface of the temperature regulating tube installation member.

11. The substrate holding device according to claim 7, wherein: The temperature regulating tube is installed in a hollow portion formed inside the temperature regulating tube installation member.

12. The substrate holding device according to claim 7, wherein: A heat conducting material is filled between the temperature regulating tube and the temperature regulating tube setting component.

13. The substrate holding device according to claim 6 or 12, characterized in that: The heat conductive material is adhesive or grease.

14. The substrate holding device according to claim 1 or 7, characterized in that: The temperature regulating medium is a cooling liquid.

15. The substrate holding device according to claim 1 or 7, characterized in that: The substrate holding device includes a circulation mechanism that circulates the temperature regulating medium in the temperature regulating tube.

16. The substrate holding device according to claim 15, characterized in that: The substrate holding device includes a medium adjusting member that adjusts at least one of a temperature and a circulation speed of the temperature adjusting medium flowing through the temperature adjusting pipe.

17. The substrate holding device according to claim 1 or 7, characterized in that: The substrate holding device includes a magnetic force generating member that generates a magnetic force that attracts the mask toward the substrate adsorbed by the electrostatic chuck. The temperature regulating tube is a non-magnetic body.

18. The substrate holding device according to claim 1 or 7, characterized in that: The substrate holding device includes a temperature adjustment member including a Peltier element for controlling the temperature of the electrostatic chuck.

19. A film forming device, characterized in that: The film forming device comprises: Chamber; an evaporation source, the evaporation source being disposed in the chamber; The substrate holding device according to any one of claims 1 to 12; and A mask is bonded to the film-forming surface of the substrate adsorbed by the electrostatic chuck of the substrate holding device.

20. A method for manufacturing an electronic device, characterized in that: The method for manufacturing an electronic device includes a film forming step of forming a film on a substrate using the film forming apparatus according to claim 19.

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