A method for analyzing ion extraction capability of variable aperture gate based on transient gate spacing

Abstract

The present application relates to a method for analyzing the ion extraction capability of a variable aperture gate hole based on a transient gate spacing. The method comprises: obtaining the plasma temperature distribution and plasma density distribution for the ion extraction capability analysis; calculating the transient gate spacing for the ion extraction capability analysis according to the plasma temperature distribution and the thermal simulation model of the gate assembly; constructing a numerical simulation model of the gate hole for the ion extraction capability analysis according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing; simulating and calculating the gate holes in each area according to the numerical simulation model of the gate hole to determine the ion extraction capability of a single gate hole for the ion extraction capability analysis, as well as the variation law between the gate spacing and the plasma density. The present application combines the plasma density distribution, the plasma temperature distribution and the transient gate spacing in the discharge chamber to obtain the ion extraction capability of a single gate hole, and accurately and quickly evaluate the performance of the ion thruster.

Description

Technical Field

[0001] The present invention relates to the field of space electric propulsion technology, and more specifically, to a method for analyzing ion extraction capability of a variable aperture gate hole based on transient gate spacing. Background Art

[0002] Compared with other types of electric thrusters, ion thrusters have the characteristics of high specific impulse, continuously adjustable thrust and long working life. They can greatly increase the payload of spacecraft, extend the service life of spacecraft and reduce the launch cost of spacecraft. Therefore, ion thrusters have been used for tasks such as north-south position maintenance and attitude control of spacecraft.

[0003] The grid assembly is a key component of the ion thruster. It consists of two or three metal grids, each of which has thousands or tens of thousands of grid holes. The ion extraction capability of each grid hole will directly determine the extracted beam of the grid assembly, that is, the thruster performance. Therefore, accurately evaluating the ion extraction capability of a single grid hole can predict the performance of the thruster.

[0004] However, under current circumstances, it is difficult to accurately evaluate the ion extraction capability of a single grid hole. This is because: First, the ion extraction capability is subject to many factors, not only related to the geometric structure parameters and operating parameters of the grid assembly, but also related to the plasma density in the discharge chamber. The special structural composition and working mechanism of the discharge chamber make it difficult to measure the plasma density in experiments; Second, the uneven distribution of plasma density leads to uneven temperature distribution on the grid surface when the thruster is working, resulting in differences in the grid deformation, and the size of the deformation is also difficult to measure in experiments. Summary of the invention

[0005] The embodiments of the present application provide a method for analyzing the ion extraction capability of a variable aperture gate hole based on a transient gate spacing. In order to have a basic understanding of some aspects of the disclosed embodiments, a simple summary is given below. This summary is not a general review, nor is it intended to identify key / important components or to describe the scope of protection of these embodiments. Its only purpose is to present some concepts in a simple form as a preface to the detailed description that follows.

[0006] In a first aspect, the present application provides a method for analyzing ion extraction capability of a variable aperture gate based on a transient gate spacing, the method comprising:

[0007] Obtain plasma temperature distribution and plasma density distribution for ion extraction capability analysis;

[0008] Calculating a transient gate spacing for the ion extraction capability analysis based on the plasma temperature distribution and a gate assembly thermal simulation model;

[0009] Constructing a gate aperture numerical simulation model for analyzing the ion extraction capability according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing;

[0010] The gate holes in each region are simulated and calculated according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, as well as the variation law between the gate spacing and the plasma density.

[0011] According to a preferred embodiment, the step of obtaining the plasma temperature distribution and the plasma density distribution for ion extraction capability analysis includes:

[0012] Construct a numerical simulation model of the discharge chamber for ion extraction capability analysis;

[0013] According to the discharge chamber numerical simulation model, the plasma temperature distribution and the plasma density distribution for the ion extraction capability analysis are obtained.

[0014] According to a preferred embodiment, the gate aperture numerical simulation model for ion extraction capability analysis is constructed according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing, including:

[0015] Comparing the transient gate spacing with the measured transient gate spacing to verify the correctness of the gate component thermal simulation model for the ion extraction capability analysis;

[0016] When the correctness of the thermal simulation model of the gate assembly is verified, the ion Debye length of the ion extraction capability analysis is calculated according to the plasma temperature distribution and the plasma density distribution;

[0017] A gate hole numerical simulation model for analyzing the ion extraction capability is constructed according to the ion Debye length and the transient gate spacing.

[0018] According to a preferred embodiment, the gate aperture numerical simulation model for ion extraction capability analysis is constructed based on the ion Debye length and the transient gate spacing, including:

[0019] Determining the discharge chamber sheath thickness for the ion extraction capability analysis according to the ion Debye length;

[0020] According to the discharge chamber sheath thickness and the transient gate spacing, a gate hole numerical simulation model for analyzing the ion extraction capability is constructed.

[0021] According to a preferred embodiment, the gate holes in each region are simulated and calculated according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, as well as the variation law between the gate spacing and the plasma density, including:

[0022] Performing simulation calculation on the grid holes in each region according to the grid hole numerical simulation model to obtain the ion beam current in each region for the ion extraction capability analysis;

[0023] According to the variation relationship between the ion beam current and the gate spacing in each region, the ion extraction capability of a single gate hole in the ion extraction capability analysis and the variation law between the gate spacing and the plasma density are determined.

[0024] In a second aspect, the present application provides a variable aperture gate ion extraction capability analysis device based on transient gate spacing, the device comprising:

[0025] An acquisition module, used to acquire plasma temperature distribution and plasma density distribution for ion extraction capability analysis;

[0026] A transient gate spacing calculation module, used to calculate the transient gate spacing for the ion extraction capability analysis according to the plasma temperature distribution and the gate component thermal simulation model;

[0027] A construction module, used to construct a gate aperture numerical simulation model for analyzing the ion extraction capability according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing;

[0028] The determination module is used to perform simulation calculation on the gate holes in each area according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density.

[0029] According to a preferred embodiment, the acquisition module is specifically used for:

[0030] Construct a numerical simulation model of the discharge chamber for ion extraction capability analysis;

[0031] According to the discharge chamber numerical simulation model, the plasma temperature distribution and the plasma density distribution for the ion extraction capability analysis are obtained.

[0032] According to a preferred embodiment, the building block comprises:

[0033] A verification unit, used to compare the transient gate spacing with the measured transient gate spacing to verify the correctness of the gate component thermal simulation model for the ion extraction capability analysis;

[0034] An ion Debye length calculation unit, used to calculate the ion Debye length for the ion extraction capability analysis according to the plasma temperature distribution and the plasma density distribution when the correctness verification of the thermal simulation model of the grid assembly is passed;

[0035] The model building unit is used to build a gate hole numerical simulation model for analyzing the ion extraction capability according to the ion Debye length and the transient gate spacing.

[0036] According to a preferred embodiment, the model building unit is specifically used for:

[0037] Determining the discharge chamber sheath thickness for the ion extraction capability analysis according to the ion Debye length;

[0038] According to the discharge chamber sheath thickness and the transient gate spacing, a gate hole numerical simulation model for analyzing the ion extraction capability is constructed.

[0039] According to a preferred implementation, the determining module is specifically configured to:

[0040] Performing simulation calculation on the grid holes in each region according to the grid hole numerical simulation model to obtain the ion beam current in each region for the ion extraction capability analysis;

[0041] According to the variation relationship between the ion beam current and the gate spacing in each region, the ion extraction capability of a single gate hole in the ion extraction capability analysis and the variation law between the gate spacing and the plasma density are determined.

[0042] In a third aspect, the present application provides a computer storage medium, which stores a plurality of instructions, and the instructions are suitable for being loaded by a processor and executing the above-mentioned method steps.

[0043] In a fourth aspect, the present application provides a terminal, which may include: a processor and a memory; wherein the memory stores a computer program, and the computer program is suitable for being loaded by the processor and executing the above-mentioned method steps.

[0044] The technical solution provided by this application may have the following beneficial effects:

[0045] In the present application, a variable aperture gate hole ion extraction capability analysis method based on transient gate spacing is used to obtain the plasma temperature distribution and plasma density distribution of the ion extraction capability analysis; the transient gate spacing of the ion extraction capability analysis is calculated according to the plasma temperature distribution and the thermal simulation model of the gate assembly; the gate hole numerical simulation model of the ion extraction capability analysis is constructed according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing; the gate holes in each area are simulated and calculated according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, as well as the variation law between the gate spacing and the plasma density. In view of the problems existing in the prior art, the present application can obtain the ion extraction capability of a single gate hole under different plasma temperature distributions, plasma density distributions and transient gate spacings, can quickly predict the performance of the ion thruster, judge whether the geometric structure parameters or working parameters of the discharge chamber and the gate assembly meet the design requirements, and propose an optimization design method for the geometric structure parameters or working parameters of the discharge chamber and the gate assembly, which greatly shortens the R&D cycle of ion thruster products and reduces the development cost of products.

[0046] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0048] Figure 1 It is a flow chart of a method for analyzing ion extraction capability of a variable aperture gate hole based on transient gate spacing provided in an embodiment of the present application;

[0049] Figure 2 It is a schematic diagram of a three-dimensional numerical simulation model of a gate hole according to a method for analyzing ion extraction capability of a variable aperture gate hole based on a transient gate spacing provided in an embodiment of the present application;

[0050] Figure 3 It is a schematic diagram of a device for analyzing ion extraction capability of a variable aperture gate hole based on transient gate spacing provided in an embodiment of the present application;

[0051] Figure 4 This is a terminal schematic diagram provided in an embodiment of the present application.

[0052] Reference numerals:

[0053] 10000, acquisition module, 20000, transient gate spacing calculation module, 30000, construction module, 40000, determination module;

[0054] 1001. Processor, 1002. Communication bus, 1003. User interface, 1004. Network interface, 1005. Memory. DETAILED DESCRIPTION

[0055] The following description and the drawings sufficiently illustrate specific embodiments of the invention to enable those skilled in the art to practice them.

[0056] It should be clear that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0057] When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are only examples of systems and methods consistent with some aspects of the present invention as detailed in the attached claims.

[0058] In the description of the present invention, it should be understood that the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, in the description of the present invention, unless otherwise specified, "plurality" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the previously associated objects are in an "or" relationship.

[0059] See also Figure 1 and 2 , a flow chart of a method for analyzing ion extraction capability of a variable aperture gate hole based on transient gate spacing is provided for an embodiment of the present application. Figure 1 and 2 As shown, the method of the embodiment of the present application may include the following steps:

[0060] In order to obtain the gate spacing deformation process under specific structure and rated working conditions, and to help designers more deeply clarify the gate spacing variation law under the coupling of the discharge chamber and the gate assembly, and provide data support and technical support for the optimization design of the gate assembly. The embodiment of the present application provides a variable aperture gate hole ion extraction capability analysis method based on transient gate spacing, which belongs to the performance calculation method of the variable aperture gate ion thruster, to obtain the ion extraction capability of a single gate hole of the ion thruster under specific structure and rated working conditions. On the one hand, the microscopic characteristic parameters of the plasma are obtained from the microscopic level by the simulation calculation method, and on the other hand, the relationship between the ion extraction capability of a single gate hole and the microscopic characteristic parameters of the plasma and the gate deformation is established, so as to have a deeper understanding of the coupling working process and mechanism of the discharge chamber and the gate assembly when the thruster is working. The embodiment of the present application mainly studies the gate deformation under the microscopic characteristic parameters of the plasma, and then derives and calculates the ion extraction capability of a single gate hole. The specific steps include:

[0061] In the embodiment of the present application, the gate spacing variation law is the variation law between the gate spacing and the plasma density; the microscopic characteristic parameter of the plasma is the ion beam current; and the gate deformation is the gate spacing.

[0062] S100, obtaining plasma temperature distribution and plasma density distribution for ion extraction capability analysis, including:

[0063] A discharge chamber numerical simulation model for ion extraction capability analysis is constructed; based on the discharge chamber numerical simulation model, a particle cloud and Monte Carlo method are used to perform numerical simulation calculations on the gas discharge process in the discharge chamber to obtain the plasma temperature distribution and plasma density distribution in the discharge chamber for ion extraction capability analysis.

[0064] In the numerical simulation model of the discharge chamber of the present application embodiment, the screen grid is used as a boundary condition of the numerical simulation model of the discharge chamber according to the structural characteristics of the grid component. The treatment of charged particles in this boundary condition must be consistent with the actual situation of the grid component; the treatment of ions and neutral atoms of charged particles in this boundary is set according to the actual ion transparency and atom transparency. Then, the numerical simulation calculation of the discharge chamber is carried out using the numerical simulation model of the discharge chamber.

[0065] Use ion transparency It means that, of the ions that collide with the screen grid in the discharge chamber, some pass through the screen grid holes and enter the grid assembly, while the other part is absorbed by the screen grid. The number of ions that pass through the screen grid holes is related to the ion transparency.

[0066] (1),

[0067] represents the number of ions, which is a number between 0 and 1 randomly generated by a computer. If equation (1) is satisfied, the ions pass through the grid holes, otherwise the ions are absorbed by the screen grid. The grid holes in this application are the screen grid holes.

[0068] Neutral atoms may be manipulated on the screen surface using atomic transparency in the same manner as described above for ions on the screen surface.

[0069] S200, calculating the transient gate spacing for the ion extraction capability analysis according to the plasma temperature distribution and the gate component thermal simulation model;

[0070] In the embodiment of the present application, the plasma temperature distribution is used as the input of the gate thermal simulation and input into the gate component thermal simulation model. Inside the gate component thermal simulation model, the gate transient gate spacing simulation calculation is carried out to output the transient gate spacing. According to the transient gate spacing, the instantaneous change curve of the gate spacing can be obtained.

[0071] S300, constructing a gate aperture numerical simulation model for analyzing the ion extraction capability according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing, including:

[0072] The transient gate spacing is compared with the measured transient gate spacing to verify the correctness of the thermal simulation model of the gate assembly for the ion extraction capability analysis, that is, to verify the correctness of the thermal simulation model of the gate assembly under given conditions of the plasma temperature distribution and plasma density distribution included in the discharge chamber simulation results. The measured transient gate spacing is measured using a dedicated device for measuring the gate spacing, which is an ion thruster gate thermal geometric parameter measurement system.

[0073] If the transient gate spacing is consistent with the measured transient gate spacing, that is, if the gate component thermal simulation model is verified to be correct, the ion Debye length for the ion extraction capability analysis is calculated based on the plasma temperature distribution and the plasma density distribution.

[0074] In the embodiment of the present application, the calculation of the ion Debye length is carried out for the gate hole of the subsequent simulation analysis, and the plasma density distribution and the plasma temperature distribution are the above-mentioned discharge chamber simulation results corresponding to the position of the gate hole.

[0075] The expression for calculating the ion Debye length is:

[0076] (2),

[0077] in, is the ion Debye length; is the dielectric constant of vacuum; is the Boltzmann constant; is the plasma temperature; is the plasma density; is the electron charge.

[0078] According to the ion Debye length and the transient gate spacing, the numerical simulation model of the gate hole for ion extraction capability analysis is constructed, specifically including: according to the ion Debye length (2), the ion Debye length in the discharge chamber is calculated, and the discharge chamber sheath thickness for ion extraction capability analysis is obtained based on the sheath thickness being 3 times the ion Debye length. The discharge chamber sheath thickness is the distance from the left boundary of the calculation area to the upper surface of the screen grid; according to the transient gate spacing result, the distance from the lower surface of the grid to the left boundary is obtained; the distance from the lower surface of the grid to the right boundary of the calculation area is 10 Debye lengths; according to the distance from the left boundary to the upper surface of the screen grid, the distance from the lower surface of the grid to the left boundary, and the distance from the lower surface of the grid to the right boundary of the calculation area obtained by the above process, the lateral length of the three-dimensional numerical simulation model of the gate hole for ion extraction capability analysis can be obtained; the longitudinal length and radial length are the center distances between the two gate holes. According to the lateral length, longitudinal length and radial length, the three-dimensional numerical simulation model of the gate hole for ion extraction capability analysis can be established.

[0079] According to the changing relationship between the ion beam current and the gate spacing in each region, the ion extraction capacity of a single gate hole in the ion extraction capacity analysis and the changing law between the gate spacing and the plasma density are determined. According to the above analysis process, the ion beam current of a single gate hole corresponding to the transient gate spacing of each region of the grid assembly is obtained, thereby obtaining the changing curve of the ion beam current and the transient gate spacing, and obtaining the ion extraction capacity of the gate hole at different transient gate spacings, that is, the ion extraction capacity of a single gate hole; and the ion density corresponding to the gate hole in each region is also different, so in the above statistical process, the ion density corresponding to the gate hole in each region can also be obtained, and the changing law between the ion beam current and the plasma density can be obtained; thus, according to the changing curve of the ion beam current and the transient gate spacing, and the changing law between the ion beam current and the plasma density, the changing law between the gate spacing and the plasma density is determined. The gate spacing is the initial cold gate spacing, the transient gate spacing and the steady-state gate spacing of the grid assembly; the changing relationship between the ion beam current and the gate spacing in each region includes: the changing curve of the ion beam current and the transient gate spacing. A gate hole is selected as a research object for simulation in one of the regions of the gate component, and a corresponding three-dimensional numerical simulation model of the gate hole is constructed according to the transient gate spacing of the region. The gate hole in the three-dimensional numerical simulation model of the gate hole is a single gate hole to be studied in the numerical simulation of the gate hole. In the embodiment of the present application, a gate hole is first selected in a region of the gate component, and another gate hole is selected from the adjacent gate holes of the gate hole in consideration of the interaction between the gate holes. These two gate holes are used as research objects for simulation, and then 1 / 4 of the volume of each of the two gate holes is selected as the research area for simulation to construct a three-dimensional numerical simulation model of the gate hole; in each region of the gate component, the same three-dimensional numerical simulation model construction method of the gate hole is adopted to establish a three-dimensional numerical simulation model of the gate hole in each region of the gate component. The gate hole numerical simulation model of the present application includes a three-dimensional numerical simulation model of a plurality of gate holes; the specific three-dimensional numerical simulation model of the gate hole is as follows Figure 2 shown.

[0080] S400, performing simulation calculation on the gate holes in each region according to the gate hole numerical simulation model, determining the ion extraction capability of a single gate hole in the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density, including:

[0081] According to the aperture numerical simulation model, the apertures in each region are simulated and calculated to obtain the ion beam currents in each region for the ion extraction capability analysis. The particle cloud method is used for ion tracking. The aperture numerical simulation model is used to carry out simulation calculations, and the ion beam current of a aperture selected in a region passing through the screen grid and the screen grid hole is obtained by statistics, that is, the ion beam current corresponding to the transient gate spacing in the region; the same method is used to select an aperture in other regions as the research object for simulation, and the ion beam current corresponding to the transient gate spacing in other regions is obtained according to the transient gate spacing corresponding to other regions, thereby obtaining the ion beam currents in each region for the ion extraction capability analysis.

[0082] According to the changing relationship between the ion beam current and the gate spacing in each region, the ion extraction capacity of a single gate hole in the ion extraction capacity analysis and the changing law between the gate spacing and the plasma density are determined. According to the above analysis process, the ion beam current of a single gate hole corresponding to the transient gate spacing of each region of the grid assembly is obtained, thereby obtaining the changing curve of the ion beam current and the transient gate spacing, and obtaining the ion extraction capacity of the gate hole at different transient gate spacings, that is, the ion extraction capacity of a single gate hole; and the ion density corresponding to the gate hole in each region is also different, so in the above statistical process, the ion density corresponding to the gate hole in each region can also be obtained, and the changing law between the ion beam current and the plasma density can be obtained; thus, according to the changing curve of the ion beam current and the transient gate spacing, and the changing law between the ion beam current and the plasma density, the changing law between the gate spacing and the plasma density is determined. The gate spacing is the initial cold gate spacing, the transient gate spacing and the steady-state gate spacing of the grid assembly; the changing relationship between the ion beam current and the gate spacing in each region includes: the changing curve of the ion beam current and the transient gate spacing.

[0083] In the embodiment of the present application, the variable aperture gate hole ion extraction capability analysis method based on transient gate spacing obtains the plasma temperature distribution and plasma density distribution of the ion extraction capability analysis; according to the plasma temperature distribution and the thermal simulation model of the gate assembly, the transient gate spacing of the ion extraction capability analysis is calculated; according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing, the gate hole numerical simulation model of the ion extraction capability analysis is constructed; according to the gate hole numerical simulation model, the gate holes in each area are simulated and calculated to determine the ion extraction capability of a single gate hole of the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density. The present application combines the plasma density distribution, the plasma temperature distribution and the gate thermal deformation (i.e., the transient gate spacing) in the discharge chamber to obtain the ion extraction capability of a single gate hole, accurately evaluate the performance of the ion thruster, determine whether the geometric structure parameters or working parameters of the discharge chamber and the gate assembly meet the design requirements, and propose an optimization design method for the geometric structure parameters or working parameters of the discharge chamber and the gate assembly, which greatly shortens the R&D cycle of ion thruster products and reduces the development cost of products.

[0084] The following are embodiments of the device of the present invention, which can be used to implement the method embodiments of the present invention. For details not disclosed in the device embodiments of the present invention, please refer to the method embodiments of the present invention.

[0085] See also Figure 3 , which shows a schematic diagram of a structure of a variable aperture gate hole ion extraction capability analysis device based on transient gate spacing provided by an exemplary embodiment of the present invention. The device includes: an acquisition module 10000, a transient gate spacing calculation module 20000, a construction module 30000 and a determination module 40000.

[0086] An acquisition module 10000 is used to acquire plasma temperature distribution and plasma density distribution for ion extraction capability analysis;

[0087] A transient gate spacing calculation module 20000 is used to calculate the transient gate spacing for the ion extraction capability analysis according to the plasma temperature distribution and the gate component thermal simulation model;

[0088] A construction module 30000 is used to construct a gate aperture numerical simulation model for analyzing the ion extraction capability according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing;

[0089] The determination module 40000 is used to perform simulation calculations on the gate holes in each area according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density.

[0090] According to a preferred embodiment, the acquisition module 10000 is specifically used for:

[0091] Construct a numerical simulation model of the discharge chamber for ion extraction capability analysis;

[0092] According to the discharge chamber numerical simulation model, the plasma temperature distribution and the plasma density distribution for the ion extraction capability analysis are obtained.

[0093] According to a preferred embodiment, the building block 30000 comprises:

[0094] A verification unit, used to compare the transient gate spacing with the measured transient gate spacing to verify the correctness of the gate component thermal simulation model for the ion extraction capability analysis;

[0095] An ion Debye length calculation unit, used to calculate the ion Debye length for the ion extraction capability analysis according to the plasma temperature distribution and the plasma density distribution when the correctness verification of the thermal simulation model of the grid assembly is passed;

[0096] The model building unit is used to build a gate hole numerical simulation model for analyzing the ion extraction capability according to the ion Debye length and the transient gate spacing.

[0097] According to a preferred embodiment, the model building unit is specifically used for:

[0098] Determining the discharge chamber sheath thickness for the ion extraction capability analysis according to the ion Debye length;

[0099] According to the discharge chamber sheath thickness and the transient gate spacing, a gate hole numerical simulation model for analyzing the ion extraction capability is constructed.

[0100] According to a preferred implementation, the determining module 40000 is specifically configured to:

[0101] Performing simulation calculation on the grid holes in each region according to the grid hole numerical simulation model to obtain the ion beam current in each region for the ion extraction capability analysis;

[0102] According to the variation relationship between the ion beam current and the gate spacing in each region, the ion extraction capability of a single gate hole in the ion extraction capability analysis and the variation law between the gate spacing and the plasma density are determined.

[0103] It should be noted that the variable aperture gate hole ion extraction capability analysis device based on transient gate spacing provided in the above embodiment only uses the division of the above functional modules as an example when executing the variable aperture gate hole ion extraction capability analysis method based on transient gate spacing. In actual applications, the above functional distribution can be completed by different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. In addition, the variable aperture gate hole ion extraction capability analysis device based on transient gate spacing provided in the above embodiment and the variable aperture gate hole ion extraction capability analysis method based on transient gate spacing belong to the same concept. The implementation process thereof is detailed in the method embodiment and will not be repeated here.

[0104] In the embodiment of the present application, the variable aperture gate hole ion extraction capability analysis device based on transient gate spacing obtains the plasma temperature distribution and plasma density distribution of the ion extraction capability analysis; according to the plasma temperature distribution and the thermal simulation model of the gate assembly, the transient gate spacing of the ion extraction capability analysis is calculated; according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing, the gate hole numerical simulation model of the ion extraction capability analysis is constructed; according to the gate hole numerical simulation model, the gate holes in each area are simulated and calculated to determine the single gate hole ion extraction capability of the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density. In view of the problems existing in the prior art, the present application can obtain the single gate hole ion extraction capability under different plasma temperature distributions, plasma density distributions and gate spacings, can quickly predict the performance of the ion thruster, judge whether the geometric structure parameters or working parameters of the discharge chamber and the gate assembly meet the design requirements, and propose an optimization design method for the geometric structure parameters or working parameters of the discharge chamber and the gate assembly, which greatly shortens the R&D cycle of ion thruster products and reduces the development cost of products.

[0105] The present invention also provides a computer-readable medium having program instructions stored thereon, which, when executed by a processor, implements the variable aperture gate hole ion extraction capability analysis method based on transient gate spacing provided by the above-mentioned various method embodiments.

[0106] The present invention also provides a computer program product comprising instructions, which, when executed on a computer, enables the computer to execute the variable aperture gate hole ion extraction capability analysis method based on transient gate spacing of each of the above method embodiments.

[0107] See also Figure 4 , which is a schematic diagram of the structure of a terminal according to an embodiment of the present application. The terminal may include: at least one processor 1001, at least one network interface 1004, a user interface 1003, a memory 1005, and at least one communication bus 1002.

[0108] The communication bus 1002 is used to realize the connection and communication between these components.

[0109] The user interface 1003 may include a display screen (Display) and a camera (Camera), and the optional user interface 1003 may also include a standard wired interface and a wireless interface.

[0110] The network interface 1004 may optionally include a standard wired interface or a wireless interface (such as a WI-FI interface).

[0111] Among them, the processor 1001 may include one or more processing cores. The processor 1001 uses various interfaces and lines to connect various parts in the entire terminal, and executes various functions of the terminal and processes data by running or executing instructions, programs, code sets or instruction sets stored in the memory 1005, and calling data stored in the memory 1005. Optionally, the processor 1001 can be implemented in at least one hardware form of digital signal processing (Digital Signal Processing, DSP), field programmable gate array (Field-Programmable Gate Array, FPGA), and programmable logic array (Programmable Logic Array, PLA). The processor 1001 can integrate one or a combination of a central processing unit (Central Processing Unit, CPU), a graphics processing unit (Graphics Processing Unit, GPU) and a modem. Among them, the CPU mainly processes the operating system, user interface and application programs; the GPU is responsible for rendering and drawing the content to be displayed on the display screen; the modem is used to process wireless communications. It can be understood that the above-mentioned modem may not be integrated into the processor 1001, and it can be implemented separately through a chip.

[0112] Among them, the memory 1005 may include a random access memory (Random Access Memory, RAM) and may also include a read-only memory (Read-Only Memory). Optionally, the memory 1005 includes a non-transitory computer-readable storage medium. The memory 1005 can be used to store instructions, programs, codes, code sets or instruction sets. The memory 1005 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as a touch function, a sound playback function, an image playback function, etc.), instructions for implementing the above-mentioned various method embodiments, etc.; the data storage area may store data involved in the above-mentioned various method embodiments, etc. The memory 1005 may optionally be at least one storage device located away from the aforementioned processor 1001. As Figure 4 As shown, the memory 1005 as a computer storage medium may include an operating system, a network communication module, a user interface module, and an application program for analyzing ion extraction capability of a variable aperture gate based on transient gate spacing.

[0113] exist Figure 4 In the terminal shown, the user interface 1003 is mainly used to provide an input interface for the user and obtain the data input by the user; and the processor 1001 can be used to call the variable aperture gate hole ion extraction capability analysis application based on transient gate spacing stored in the memory 1005, and specifically perform the following operations:

[0114] Obtain plasma temperature distribution and plasma density distribution for ion extraction capability analysis;

[0115] Calculating a transient gate spacing for the ion extraction capability analysis based on the plasma temperature distribution and a gate assembly thermal simulation model;

[0116] Constructing a gate aperture numerical simulation model for analyzing the ion extraction capability according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing;

[0117] The gate holes in each region are simulated and calculated according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, as well as the variation law between the gate spacing and the plasma density.

[0118] In one embodiment, when the processor 1001 executes the acquisition of the plasma temperature distribution and the plasma density distribution for the ion extraction capability analysis, the processor 1001 specifically performs the following operations:

[0119] Construct a numerical simulation model of the discharge chamber for ion extraction capability analysis;

[0120] According to the discharge chamber numerical simulation model, the plasma temperature distribution and the plasma density distribution for the ion extraction capability analysis are obtained.

[0121] In one embodiment, when the processor 1001 executes the construction of the gate aperture numerical simulation model for the ion extraction capability analysis according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing, the processor 1001 specifically performs the following operations:

[0122] Comparing the transient gate spacing with the measured transient gate spacing to verify the correctness of the gate component thermal simulation model for the ion extraction capability analysis;

[0123] When the correctness of the thermal simulation model of the gate assembly is verified, the ion Debye length of the ion extraction capability analysis is calculated according to the plasma temperature distribution and the plasma density distribution;

[0124] A gate hole numerical simulation model for analyzing the ion extraction capability is constructed according to the ion Debye length and the transient gate spacing.

[0125] In one embodiment, when the processor 1001 executes the construction of the gate aperture numerical simulation model for the ion extraction capability analysis according to the ion Debye length and the transient gate spacing, the processor 1001 specifically performs the following operations:

[0126] Determining the discharge chamber sheath thickness for the ion extraction capability analysis according to the ion Debye length;

[0127] According to the discharge chamber sheath thickness and the transient gate spacing, a gate hole numerical simulation model for analyzing the ion extraction capability is constructed.

[0128] In one embodiment, when the processor 1001 performs the simulation calculation of the gate holes in each region according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density, the following operations are specifically performed:

[0129] Performing simulation calculation on the grid holes in each region according to the grid hole numerical simulation model to obtain the ion beam current in each region for the ion extraction capability analysis;

[0130] According to the variation relationship between the ion beam current and the gate spacing in each region, the ion extraction capability of a single gate hole in the ion extraction capability analysis and the variation law between the gate spacing and the plasma density are determined.

[0131] In the embodiment of the present application, the variable aperture gate hole ion extraction capability analysis method based on transient gate spacing obtains the plasma temperature distribution and plasma density distribution of the ion extraction capability analysis; according to the plasma temperature distribution and the thermal simulation model of the gate assembly, the transient gate spacing of the ion extraction capability analysis is calculated; according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing, the gate hole numerical simulation model of the ion extraction capability analysis is constructed; according to the gate hole numerical simulation model, the gate holes in each area are simulated and calculated to determine the single gate hole ion extraction capability of the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density. In view of the problems existing in the prior art, the present application can obtain the single gate hole ion extraction capability under different plasma temperature distributions, plasma density distributions and gate spacings, can quickly predict the performance of the ion thruster, judge whether the geometric structure parameters or working parameters of the discharge chamber and the gate assembly meet the design requirements, and propose an optimization design method for the geometric structure parameters or working parameters of the discharge chamber and the gate assembly, which greatly shortens the R&D cycle of ion thruster products and reduces the development cost of products.

[0132] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing related hardware through a computer program, and the program can be stored in a computer-readable storage medium, and when the program is executed, it can include the processes of the embodiments of the above-mentioned methods. The storage medium can be a disk, an optical disk, a read-only storage memory, or a random access memory, etc.

[0133] The above disclosure is only the preferred embodiment of the present application, which certainly cannot be used to limit the scope of rights of the present application. Therefore, equivalent changes made according to the claims of the present application are still within the scope covered by the present application.

Claims

1. A method for analyzing ion extraction capability of variable aperture gate based on transient gate spacing, characterized in that: The following steps are involved: Obtain plasma temperature distribution and plasma density distribution for ion extraction capability analysis; Calculating a transient gate spacing for the ion extraction capability analysis based on the plasma temperature distribution and a gate assembly thermal simulation model; Constructing a gate aperture numerical simulation model for analyzing the ion extraction capability according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing; Performing simulation calculation on the gate holes in each region according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density; Wherein, constructing the gate aperture numerical simulation model for ion extraction capability analysis according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing includes: Comparing the transient gate spacing with the measured transient gate spacing to verify the correctness of the gate component thermal simulation model for the ion extraction capability analysis; When the correctness of the thermal simulation model of the gate assembly is verified, the ion Debye length of the ion extraction capability analysis is calculated according to the plasma temperature distribution and the plasma density distribution; Constructing a gate aperture numerical simulation model for analyzing the ion extraction capability according to the ion Debye length and the transient gate spacing; The method of constructing a gate aperture numerical simulation model for analyzing the ion extraction capability according to the ion Debye length and the transient gate spacing comprises: Determining the discharge chamber sheath thickness for the ion extraction capability analysis according to the ion Debye length; According to the discharge chamber sheath thickness and the transient gate spacing, a gate aperture numerical simulation model for analyzing the ion extraction capability is constructed; The method of performing simulation calculation on the gate holes in each region according to the gate hole numerical simulation model to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density, includes: Performing simulation calculation on the grid holes in each region according to the grid hole numerical simulation model to obtain the ion beam current in each region for the ion extraction capability analysis; According to the variation relationship between the ion beam current and the gate spacing in each region, the ion extraction capability of a single gate hole in the ion extraction capability analysis and the variation law between the gate spacing and the plasma density are determined.

2. The method for analyzing ion extraction capability of variable aperture gate based on transient gate spacing according to claim 1, characterized in that: The step of obtaining the plasma temperature distribution and the plasma density distribution for ion extraction capability analysis includes: Construct a numerical simulation model of the discharge chamber for ion extraction capability analysis; According to the discharge chamber numerical simulation model, the plasma temperature distribution and the plasma density distribution for the ion extraction capability analysis are obtained.

3. A variable aperture gate ion extraction capability analysis device based on transient gate spacing, characterized in that: include: An acquisition module, used to acquire plasma temperature distribution and plasma density distribution for ion extraction capability analysis; A transient gate spacing calculation module, used to calculate the transient gate spacing for the ion extraction capability analysis according to the plasma temperature distribution and the gate component thermal simulation model; A construction module, used to construct a gate aperture numerical simulation model for analyzing the ion extraction capability according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing; A determination module, used to perform simulation calculation on the gate holes in each area according to the gate hole numerical simulation model, to determine the ion extraction capability of a single gate hole in the ion extraction capability analysis, and the variation law between the gate spacing and the plasma density; Wherein, the building blocks include: A verification unit, used to compare the transient gate spacing with the measured transient gate spacing to verify the correctness of the gate component thermal simulation model for the ion extraction capability analysis; An ion Debye length calculation unit, used to calculate the ion Debye length for the ion extraction capability analysis according to the plasma temperature distribution and the plasma density distribution when the correctness verification of the thermal simulation model of the grid assembly is passed; A model building unit, used to build a gate aperture numerical simulation model for analyzing the ion extraction capability according to the ion Debye length and the transient gate spacing; The model building unit is specifically used for: Determining the discharge chamber sheath thickness for the ion extraction capability analysis according to the ion Debye length; According to the discharge chamber sheath thickness and the transient gate spacing, a gate aperture numerical simulation model for analyzing the ion extraction capability is constructed; The determining module is specifically used for: Performing simulation calculation on the grid holes in each region according to the grid hole numerical simulation model to obtain the ion beam current in each region for the ion extraction capability analysis; According to the variation relationship between the ion beam current and the gate spacing in each region, the ion extraction capability of a single gate hole in the ion extraction capability analysis and the variation law between the gate spacing and the plasma density are determined.

4. The variable aperture gate ion extraction capability analysis device based on transient gate spacing according to claim 3, characterized in that: The acquisition module is specifically used for: Construct a numerical simulation model of the discharge chamber for ion extraction capability analysis; According to the discharge chamber numerical simulation model, the plasma temperature distribution and the plasma density distribution for the ion extraction capability analysis are obtained.

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