Method for manufacturing semiconductor device and wire bonding apparatus

Abstract

The invention provides a semiconductor device manufacturing method and a wire bonding device capable of improving the success rate of wire bonding. This method for manufacturing a semiconductor device is provided with: a first bonding step for bonding a lead (50) to an electrode (14) using a capillary (31); a discharge step of moving the capillary tube (31) to lead out a tip region (51) and an intermediate region (52) of the lead wire (50) from the capillary tube (31); a bending step of repeatedly bending each of the first bent portion (54) and the second bent portion (55) of the lead wire (50); a stretching step of stretching the lead wire (50) so that the lead wire (50) is cut at the first bent portion (54), thereby forming a pin lead wire (12) bonded to the electrode (14); a removal step for removing the intermediate region (52) and the second bent portion (55) from the lead (50) by bonding the intermediate region (52) to the dummy region (11b); and a second bonding step for bonding the bottom end region (53) to a new electrode (14).

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device and a wire bonding device. Background Art

[0002] There is a known technology related to wire bonding (for example, see Patent Document 1). In this technology, after the front end of the lead is bonded to the electrode, each of the multiple bent portions in the lead is repeatedly bent. When the lead is cut at the bent portion close to the electrode among the multiple bent portions, a pin lead bonded to the electrode is formed.

[0003] [Prior art literature]

[0004] [Patent Document]

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-128982 Summary of the invention

[0006] [Problems to be solved by the invention]

[0007] In the above-mentioned technology, there is a case where a bent portion far from the electrode among the plurality of bent portions remains in the lead after the pin lead is formed. Therefore, in the next wire bonding, the lead may be cut at the remaining bent portion instead of the intended cutting position. In this case, it is required to improve the success rate of wire bonding.

[0008] An object of the present invention is to provide a method for manufacturing a semiconductor device and a wire bonding device that can improve the success rate of wire bonding.

[0009] [Technical means to solve the problem]

[0010] The manufacturing method of the semiconductor device of the present invention comprises: a first bonding step of bonding a lead to a first electrode using a capillary; a releasing step of allowing a front end region of the lead bonded to the first electrode and a middle region of the lead located on the opposite side of the first electrode relative to the front end region to be led out from the capillary by moving the capillary away from the first electrode in a state where the lead can be released; a bending step of repeatedly bending a first bent portion located between the front end region and the middle region of the lead and a second bent portion located between the bottom end region located on the opposite side of the middle region relative to the front end region and the middle region of the lead by repeatedly moving the capillary close to the first electrode and moving the capillary away from the first electrode in a state where the lead is held; a stretching step of stretching the lead so that the lead is cut at the first bent portion by moving the capillary away from the first electrode in a state where the lead is held, thereby forming a pin lead bonded to the first electrode; a removing step of bonding the middle region to a dummy region using the capillary to remove the middle region and the second bent portion from the lead; and a second bonding step of bonding the bottom end region to a second electrode using the capillary.

[0011] In the method for manufacturing a semiconductor device, after forming a lead wire bonded to a first electrode, the middle region and the second bent portion are removed from the lead wire. Thus, the second bent portion remaining in the lead wire is removed from the lead wire, and thus, in the next stretching step, the cutting of the lead wire at a position different from the predetermined cutting position is suppressed. Therefore, according to the method for manufacturing a semiconductor device, the success rate of wire bonding is improved.

[0012] Alternatively, the first bonding step includes a step of melting the front end of the front end region and a step of bonding the front end of the front end region to the first electrode, and the removal step includes a step of melting the front end of the middle region, a step of bonding the front end of the middle region to the dummy region, a step of stretching the lead wire so that the lead wire is cut at the second bent portion, and a step of melting the front end of the bottom end region. Thus, not only can the middle region and the second bent portion be reliably removed from the lead wire, but the removal step can also be performed in the same manner as at least a portion of each of the first bonding step and the stretching step, thereby simplifying the process.

[0013] The dummy region may be a region of the surface of the semiconductor chip including the first electrode and away from the first electrode.

[0014] The wire bonding device of the present invention comprises: a bonding unit including a capillary configured to supply a wire; and a control unit for controlling the operation of the bonding unit, the control unit sending to the bonding unit: a first signal to bond the wire to a first electrode using the capillary; a second signal to cause a front end region of the wire bonded to the first electrode and a middle region of the wire located on the opposite side of the first electrode relative to the front end region to be drawn out of the capillary by an operation of moving the capillary away from the first electrode in a state in which the wire can be released; and a third signal to cause the capillary to move away from the first electrode and the capillary to move toward the first electrode while the wire is held. The action of the first electrode causes the first bend portion of the lead located between the front end area and the middle area, and the second bend portion of the lead located between the bottom end area on the side opposite to the front end area relative to the middle area and the middle area to be bent repeatedly; the fourth signal, by moving the capillary away from the first electrode while holding the lead, stretching the lead so that the lead is cut at the first bend portion, thereby forming a pin lead connected to the first electrode; the fifth signal, using the capillary to connect the middle area to the dummy area, thereby removing the middle area and the second bend portion from the lead; and the sixth signal, using the capillary to connect the front end of the bottom end area to the second electrode.

[0015] According to the wire bonding apparatus, similarly to the method for manufacturing a semiconductor device, the success rate of wire bonding is improved.

[0016] [Effects of the Invention]

[0017] According to the present invention, a method for manufacturing a semiconductor device and a wire bonding device capable of improving the success rate of wire bonding can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural diagram of a wire bonding apparatus according to an embodiment.

[0019] Figure 2 It is a plan view of a semiconductor device according to an embodiment.

[0020] Figure 3 It is along Figure 2 Cross-sectional view along line III-III.

[0021] Figure 4 It is a flowchart of the manufacturing method of the semiconductor device of embodiment.

[0022] Figure 5 (a) to Figure 5 (c) is a diagram showing each step of the method for manufacturing a semiconductor device according to the embodiment.

[0023] Figure 6 (a) to Figure 6(c) is a diagram showing each step of the method for manufacturing a semiconductor device according to the embodiment.

[0024] Figure 7 (a) to Figure 7 (c) is a diagram showing each step of the method for manufacturing a semiconductor device according to the embodiment.

[0025] Figure 8 (a) to Figure 8 (c) is a diagram showing each step of the method for manufacturing a semiconductor device according to the embodiment.

[0026] [Explanation of Symbols]

[0027] 1: Semiconductor devices

[0028] 10: Wire bonding device

[0029] 11: Semiconductor chips

[0030] 11a: Surface

[0031] 11b: Dummy area

[0032] 12: Pinout

[0033] 13: Virtual joint

[0034] 14: Electrode

[0035] 20: Transport unit

[0036] 30: Joining unit

[0037] 31: Capillary

[0038] 31a: Front End

[0039] 32: Lead clamp

[0040] 33: Joining tools

[0041] 34: Mobile mechanism

[0042] 40: Control unit

[0043] 50: Lead

[0044] 50a, 50b, 50c: front end

[0045] 51: Front-end area

[0046] 52: Middle area

[0047] 53: Bottom area

[0048] 54: First bend

[0049] 55: Second bend

[0050] 56: The third bend

[0051] 57, 57A, 57B: FAB

[0052] 58, 58A, 58B: Joint

[0053] S1~S6, S11~S12, S21~S22, S51~S54: Steps DETAILED DESCRIPTION

[0054] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, the same reference numerals are given to the same or corresponding parts in each figure, and repeated descriptions are omitted.

[0055] Figure 1 It is a structural diagram of the wire bonding apparatus according to this embodiment. Figure 1 The wire bonding apparatus 10 shown is used for manufacturing a semiconductor device 1 (see Figure 2 ) device. Figure 1 As shown, the wire bonding apparatus 10 includes a transport unit 20, a bonding unit 30, and a control unit 40. The transport unit 20 transports the semiconductor chip 11 to the bonding area. The bonding unit 30 includes a capillary 31, a wire clamp 32, a bonding tool 33, and a moving mechanism 34.

[0056] The capillary 31 is configured to be able to supply the lead wire 50. The capillary 31 is, for example, cylindrical. The diameter of the front end 31a of the capillary 31 is smaller than the diameter of the bottom end of the capillary 31. The lead wire 50 is inserted into the internal space of the capillary 31. The lead wire 50 is introduced relative to the bottom end of the capillary 31 and is led out from the front end 31a of the capillary 31. The capillary 31 provides heat, ultrasonic waves or pressure to the lead wire 50. The capillary 31 is mounted on the bonding tool 33. The capillary 31 is removable relative to the bonding tool 33.

[0057] The lead clamp 32 is arranged on the side opposite to the semiconductor chip 11 with respect to the capillary 31. The lead clamp 32 has an opening and closing mechanism. The lead 50 passes through the opening and closing mechanism of the lead clamp 32. When the lead clamp 32 is in a closed state, the lead 50 is clamped by the lead clamp 32, and as a result, the movement of the lead 50 relative to the capillary 31 is stopped. When the lead clamp 32 is in an open state, the clamping of the lead 50 by the lead clamp 32 is released, and as a result, the movement of the lead 50 relative to the capillary 31 is allowed.

[0058] The bonding tool 33 is fixed to the moving mechanism 34 . The moving mechanism 34 moves the capillary 31 relative to the semiconductor chip 11 by moving the bonding tool 33 .

[0059] The control unit 40 controls the operation of the transport unit 20 and the bonding unit 30. The control unit 40 sends control signals to the transport unit 20 and the bonding unit 30, respectively. The control unit 40 controls the position of the capillary 31 relative to the semiconductor chip 11 by controlling the operation of the moving mechanism 34. The control unit 40 controls the application of heat, ultrasonic waves, or pressure to the capillary 31. The control unit 40 controls the opening and closing of the lead clamp 32.

[0060] like Figure 2 and Figure 3 As shown, the semiconductor device 1 has a semiconductor chip 11, a plurality of pin leads 12, and a plurality of dummy joints (press-bonded balls) 13. The semiconductor chip 11 is provided on the main surface of a circuit substrate, for example. The plurality of pin leads 12 are provided on the surface 11a of the semiconductor chip 11. The plurality of pin leads 12 are arranged along the Y-axis direction. The plurality of dummy joints 13 are provided on the surface 11a of the semiconductor chip 11. The plurality of dummy joints 13 are arranged along the Y-axis direction. The plurality of pin leads 12 and the plurality of dummy joints 13 are adjacent to each other in the X-axis direction.

[0061] The semiconductor chip 11 has a plurality of electrodes (first electrodes) 14. The plurality of electrodes 14 are arranged along the Y-axis direction. Each electrode 14 is exposed on the surface 11a of the semiconductor chip 11. The surface 11a of the semiconductor chip 11 includes a plurality of dummy regions 11b. The dummy regions 11b are regions on the surface 11a of the semiconductor chip 11 that are away from the electrodes 14. The plurality of dummy regions 11b are arranged along the Y-axis direction. The plurality of electrodes 14 are adjacent to the plurality of dummy regions 11b in the X-axis direction.

[0062] A lead wire 12 is formed on each electrode 14. The lead wire 12 extends along the Z-axis direction (a direction perpendicular to the surface 11a of the semiconductor chip 11). The tip of the lead wire 12 is bonded to an electrode of another semiconductor chip. The semiconductor chip 11 is electrically connected to another semiconductor chip through the lead wire 12.

[0063] The pin lead 12 has a circular cross section, for example. The pin lead 12 has a diameter of, for example, about 20 μm. The pin lead 12 has a length of, for example, more than 100 μm. The pin lead 12 is made of, for example, gold (Au), silver (Ag), aluminum (Al), copper (Cu), or alloys thereof.

[0064] A dummy joint 13 is formed in the dummy region 11 b. The dummy joint 13 is not joined to an electrode of another semiconductor chip. The dummy joint 13 does not function as a component of the semiconductor device 1 .

[0065] Next, a method for manufacturing the semiconductor device 1 will be described. Figure 4As shown, the method for manufacturing the semiconductor device 1 includes a first bonding step S1 , a releasing step S2 , a bending step S3 , a stretching step S4 , a removing step S5 , and a second bonding step S6 .

[0066] The first bonding step S1 includes a step S11 and a step S12. In the first bonding step S1, the lead wire 50 is bonded to the electrode 14 using the capillary 31. Specifically, Figure 5 As shown in (a), in step S11, a spherical free air ball (Free Air Ball, FAB) 57 is formed at the front end (tail) 50a of the lead 50. In step S11, while the lead 50 is inserted into the capillary 31, a discharge based on a torch is generated at the front end 50a. As a result, the front end 50a (the front end of the front end area 51 described later) melts. When the molten front end 50a solidifies, FAB 57 is formed. In addition, FAB is also called an initial ball or an initial ball.

[0067] like Figure 5 As shown in (b), in step S12, while maintaining the open state of the lead clamp 32, ultrasonic waves are radiated from the capillary 31, and the capillary 31 moves in a manner close to the electrode 14. As a result, the FAB 57 is pressed against the electrode 14, and as a result, the FAB 57 is deformed and bonded to the electrode 14. When the FAB 57 is bonded to the electrode 14, a bonding portion 58 is formed. In the first bonding step S1, the control unit 40 sends a first signal to the bonding unit 30 to bond the lead 50 to the electrode 14 using the capillary 31.

[0068] like Figure 4 As shown in FIG. 1 , the releasing step S2 includes steps S21 and S22. In the releasing step S2, a portion of the lead 50 is led out from the capillary 31 by moving the capillary 31 away from the electrode 14 in a state where the lead 50 can be released. Specifically, Figure 5 As shown in (c), in step S21, while maintaining the open state of the lead clamp 32, the capillary 31 is moved to a position away from the electrode 14 in the Z-axis direction and in the XY plane (refer to Figure 2 and Figure 3 ) is moved to a position away from the electrode 14. In step S21, the front end region 51 of the lead 50 is led out from the capillary 31. The front end region 51 is a region of the lead 50 that is joined to the electrode 14. In step S21, the capillary 31 may be moved, for example, linearly, or may be moved along the Z-axis direction and then along the XY plane.

[0069] like Figure 6As shown in (a), in step S22, while maintaining the open state of the lead clamp 32, the capillary 31 is moved to a position further away from the electrode 14 in the Z-axis direction and overlapping with the electrode 14 in the XY plane. In step S22, the middle region 52 of the lead 50 is led out from the capillary 31. The middle region 52 is a region of the lead 50 located on the side opposite to the electrode 14 relative to the front end region 51. In the release step S2, the control unit 40 sends the following second signal to the bonding unit 30, that is, by moving the capillary 31 away from the electrode 14 in a state where the lead 50 can be released, the front end region 51 and the middle region 52 are led out from the capillary 31.

[0070] In the bending step S3, the capillary 31 is moved closer to the electrode 14 and the capillary 31 is moved away from the electrode 14 while the lead wire 50 is held. Figure 6 (b) and Figure 6 As shown in (c), in the bending process S3, the capillary 31 is reciprocated along the Z-axis direction while maintaining the closed state of the lead clamp 32. In the bending process S3, the first bending portion 54, the second bending portion 55, and the third bending portion 56 are each repeatedly bent. The first bending portion 54 is a region of the lead 50 located between the front end region 51 and the middle region 52. The second bending portion 55 is a region of the lead 50 located between the middle region 52 and the bottom end region 53. The third bending portion 56 is a region of the lead 50 including a junction portion joined to the electrode 14.

[0071] The first curved portion 54, the second curved portion 55, and the third curved portion 56 are each formed by plastic deformation of the lead wire 50. When the capillary 31 reciprocates in the Z-axis direction, the mechanical strength of the first curved portion 54 decreases due to fatigue of the first curved portion 54. In the bending step S2, the control unit 40 sends the following third signal to the bonding unit 30, that is, the action of bringing the capillary 31 close to the electrode 14 and the action of moving the capillary 31 away from the electrode 14 are repeated while the lead wire 50 is held, thereby repeatedly bending the first curved portion 54, the second curved portion 55, and the third curved portion 56.

[0072] In the stretching step S4, the lead wire 50 is stretched by moving the capillary 31 away from the electrode 14 while the lead wire 50 is held. Figure 7As shown in (a), in the stretching step S4, the capillary 31 is moved away from the electrode 14 along the Z-axis direction while maintaining the closed state of the lead clamp 32. In the stretching step S4, the lead 50 is stretched so that the lead 50 is cut at the first bent portion 54. Thus, the pin lead 12 joined to the electrode 14 is formed. In the stretching step S4, the control unit 40 sends the following fourth signal to the joining unit 30, that is, by moving the capillary 31 away from the electrode 14 while holding the lead 50, the lead 50 is stretched so that the lead 50 is cut at the first bent portion 54, thereby forming the pin lead 12 joined to the electrode 14. In addition, a portion of the first bent portion 54 remains in the front end region 51 and the middle region 52, respectively.

[0073] like Figure 4 As shown in FIG. 1 , the removal step S5 includes steps S51, S52, S53, and S54. In the removal step S5, the middle region 52 is bonded to the dummy region 11b using the capillary 31, thereby removing the middle region 52 and the second bent portion 55 from the lead 50. Specifically, as shown in FIG. Figure 7 As shown in (b), in step S51, similarly to step S11, the new front end 50b (the front end of the middle region 52) of the lead 50 is melted, and as a result, a new FAB 57A is formed. The length of the middle region 52 melted in step S51 is longer than the length of the front end region 51 melted in step S11. In this embodiment, the middle region 52 is almost entirely melted.

[0074] Then, if Figure 7 As shown in (c), in step S52, FAB 57A is pressed to dummy region 11b in the same manner as step S12. Thus, tip 50b of lead 50 is bonded to dummy region 11b, and as a result, new bond portion 58A is formed.

[0075] Then, if Figure 8 As shown in (a), in step S53, while the lead clamp 32 is kept closed, the capillary 31 is moved away from the dummy region 11b along the Z-axis direction. In step S53, the lead 50 is stretched so that the lead 50 is cut at the second bent portion 55. Thus, the dummy joint 13 joined to the dummy region 11b is formed, and the middle region 52 is removed from the lead 50. In addition, a portion of the second bent portion 55 remains in the bottom end region 53.

[0076] Then, if Figure 8As shown in (b), in step S54, the new front end 50c (the front end of the bottom end region 53) of the lead 50 is melted, and as a result, a new FAB 57B is formed. As a result, the second bend 55 remaining in the bottom end region 53 is removed. In this way, in the removal step S5, the middle region 52 and the second bend 55 are removed from the lead 50 by the so-called ball bonding. In the removal step S5, the control unit 40 sends the following fifth signal to the bonding unit 30, that is, the middle region 52 is bonded to the dummy region 11b using the capillary 31, thereby removing the middle region 52 and the second bend 55 from the lead 50. According to the removal step S5, all regions that have been fatigued due to bending are removed from the lead 50.

[0077] Then, if Figure 8 As shown in (c), in the second bonding step S6, the FAB 57B is pressed to the new electrode (second electrode) 14 in the same manner as step S12. As a result, the front end 50c of the lead 50 is bonded to the new electrode 14, resulting in the formation of a new bonding portion 58B. In the second bonding step S6, the control unit 40 sends a sixth signal to the bonding unit 30 to bond the front end 50c of the lead 50 to the new electrode 14. In the present embodiment, a plurality of pin leads 12 and a plurality of dummy bonding portions 13 are formed by repeating the above-described steps.

[0078] As described above, in the method for manufacturing the semiconductor device 1, after the pin lead 12 bonded to the electrode 14 is formed, the intermediate region 52 and the second bent portion 55 are removed from the lead 50. Thus, the second bent portion 55 remaining in the lead 50 is removed from the lead 50, so that in the next stretching step S4, the cutting of the lead 50 at a position different from the predetermined cutting position is suppressed. Therefore, according to the method for manufacturing the semiconductor device 1, the success rate of wire bonding is improved.

[0079] The first joining step S1 includes a step of melting the front end 50a (the front end of the front end region 51) of the lead 50 (step S11) and a step of joining the front end 50a to the electrode 14 (step S12). The removal step S5 includes a step of melting the front end 50b (the front end of the middle region 52) of the lead 50 (step S51), joining the front end 50b to the dummy region 11b (step S52), stretching the lead 50 so that the lead 50 is cut at the second bent portion 55 (step S53), and a step of melting the front end 50c (the front end of the bottom end region 53) of the lead 50 (step S54). Thus, not only can the middle region 52 and the second bent portion 55 be reliably removed from the lead 50, but the removal step S5 can also be performed in the same manner as at least a portion of each of the first joining step S1 and the stretching step S4, thereby simplifying the process.

[0080] The dummy region 11b is a region of the surface 11a of the semiconductor chip 11 including the electrode 14, which is away from the electrode 14. Thus, the dummy region 11b can be easily ensured.

[0081] According to the wire bonding apparatus 10 , similarly to the method for manufacturing the semiconductor device 1 described above, the success rate of wire bonding is improved.

[0082] As mentioned above, although one embodiment of the present invention has been described, the present invention is not limited to the above embodiment.

[0083] In the embodiment, an example in which the middle region 52 and the second bent portion 55 are removed from the lead 50 by ball bonding is shown, but the middle region 52 and the second bent portion 55 may be removed from the lead 50 by, for example, wedge bonding. Specifically, after the stretching step S4, a portion of the bottom region 53 is led out from the capillary 31 while the lead clamp 32 is maintained in an open state. Then, the capillary 31 is moved in a manner close to the dummy region 11b. Thus, a predetermined area in the bottom region 53 is pressed against the dummy region 11b, and thus the bottom region 53 is bonded to the dummy region 11b. When the bottom region 53 is pressed against the dummy region 11b, heat or ultrasonic waves may be provided from the capillary 31. Then, while the lead clamp 32 is maintained in a closed state, the capillary 31 is moved in a manner away from the dummy region 11b to cut off the bottom region 53. By wedge bonding, a region fatigued by bending can be removed from the lead 50 in the same manner as by ball bonding.

[0084] In the embodiment, an example is shown in which the lead 50 is cut at the first bend 54 in the stretching step S4, but the lead 50 may be cut at the third bend 56 instead of the first bend 54. The reason is as follows. When the FAB 57 is bonded to the electrode 14 in the step S12, the size of the metal crystal of the FAB 57 changes, so the size of the metal crystal of the FAB 57 and the size of the metal crystal of the front end region 51 may be different from each other. At this time, there is a tendency that the mechanical strength of the boundary region (region where the size of the metal crystal changes) between the FAB 57 and the front end region 51 in the lead 50 is smaller than the mechanical strength of the FAB 57 or the front end region 51. Therefore, when the lead 50 is stretched in the stretching step S4, the lead 50 may be cut more easily at the third bend 56 than at the first bend 54. In this case, a new FAB may be formed at the new front end of the lead 50 cut at the third bend 56. Thus, the third bent portion 56 remaining at the front end of the lead 50 is removed. Subsequently, a new joint portion may be formed by pressing the new FAB against the electrode 14 again. Thus, when the lead 50 is stretched, the lead 50 is easily cut at the first bent portion 54. In addition, in the case where the possibility of the lead 50 being cut at the third bent portion 56 is relatively high, the FAB 57 may be pressed against the dummy area in step S12. The new FAB formed by removing the third bent portion 56 from the lead 50 may also be pressed against the electrode 14.

[0085] In the embodiment, the dummy region 11b is an example of a region on the surface 11a of the semiconductor chip 11 that is away from the electrode 14, but the dummy region 11b may also be a new electrode (second electrode) 14 that is the object of the next bonding. The dummy region 11b may also be a predetermined region away from a component (e.g., a dummy stage, etc.) of the semiconductor device 1.

Claims

1. A method for manufacturing a semiconductor device, comprising: a first bonding step of bonding the lead wire to the first electrode using a capillary; A releasing step of releasing the capillary from the first electrode so that the front end region of the lead wire bonded to the first electrode and the middle region of the lead wire located on the opposite side of the front end region from the first electrode are released from the capillary; a bending step of repeatedly bending a first bent portion of the lead wire located between the front end region and the middle region and a second bent portion of the lead wire located between the middle region and the bottom end region on the side opposite to the front end region with respect to the middle region by repeatedly performing an action of bringing the capillary close to the first electrode and an action of moving the capillary away from the first electrode while the lead wire is held; a stretching step of stretching the lead wire so that the lead wire is cut at the first bent portion by moving the capillary away from the first electrode while the lead wire is held, thereby forming a pin lead wire bonded to the first electrode; a removing step of bonding the middle region to a dummy region using the capillary, thereby removing the middle region and the second bent portion from the lead; as well as In the second bonding step, the bottom end region is bonded to a second electrode using the capillary.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the first bonding step comprises a step of melting the front end of the front end region and a step of bonding the front end of the front end region to the first electrode, The removal process includes a process of melting the front end of the middle region, a process of joining the front end of the middle region to the dummy region, a process of stretching the lead so that the lead is cut at the second bent portion, and a process of melting the front end of the bottom end region. 3 . The method for manufacturing a semiconductor device according to claim 2 , wherein the dummy region is a region away from the first electrode in a surface of a semiconductor chip including the first electrode.

4. A wire bonding device, comprising: a bonding unit including a capillary configured to supply a lead; as well as a control unit for controlling the action of the joining unit, The control unit sends to the joining unit: a first signal, bonding the lead to a first electrode using the capillary; a second signal, by moving the capillary away from the first electrode in a state where the lead can be released, so that a front end region of the lead joined to the first electrode and a middle region of the lead located on the opposite side of the front end region from the first electrode are led out from the capillary; a third signal, by repeatedly performing an action of bringing the capillary close to the first electrode and an action of moving the capillary away from the first electrode while holding the lead, so that a first curved portion of the lead located between the front end region and the middle region and a second curved portion of the lead located between the bottom end region on the side opposite to the front end region with respect to the middle region and the middle region are repeatedly bent; a fourth signal, by moving the capillary away from the first electrode while holding the lead, stretching the lead so that the lead is cut at the first bent portion, thereby forming a pin lead bonded to the first electrode; a fifth signal, using the capillary to join the middle region to a dummy region, thereby removing the middle region and the second bent portion from the lead; as well as A sixth signal is to connect the front end of the bottom end region to the second electrode using the capillary.

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