Heating plate, heating plate processing method and process chamber

Abstract

The invention provides a heating plate, a processing method of the heating plate and a process chamber. The heating disc comprises a heating disc body used for heating a wafer carried on the heating disc body; the aluminum oxide film layer is arranged on the heating disc body, at least one concave pattern area is arranged on the upper surface of the aluminum oxide film layer, and the aluminum oxide film layer is used for dissipating heat of the back face of the wafer in the thin film deposition process and supporting the back face of the wafer through a plurality of non-pattern areas with the same height.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and in particular to a heating disk, a process chamber, and a processing method of the heating disk. Background Art

[0002] In the thin film deposition process, since some materials are very sensitive to temperature, high temperature may cause the material structure to change or decompose. Moderately heating the substrate without overheating helps control the deposition process of the material. In addition, some substrate materials (such as plastics and certain types of glass) may deform or be damaged at high temperatures. The use of medium and low temperature heating plates can avoid these problems. Therefore, medium and low temperature heating plates are usually used. However, due to the low temperature of the heating plate, the distance between the wafer and the heating plate usually has a greater impact on the temperature.

[0003] In the prior art, multiple sapphire protrusions are usually pressed into the medium and low temperature heating plate by inlaying to carry the wafer to be heated. However, due to the high precision requirements on the height of the sapphire protrusions on the surface of the heating plate, the installation is difficult, and the force and technique of pressing down are usually difficult to guarantee. If the force is too strong, the sapphire will be pressed too deep, and if the force is too weak, the height of the protrusion will be too high. In addition, the height of multiple sapphire protrusions needs to be consistent, and the overall flatness is difficult to guarantee, which seriously affects the cooling effect of the wafer.

[0004] In order to overcome the above-mentioned defects of the prior art, a heating plate technology is urgently needed in the art to improve the consistency of the temperature of each area of ​​the wafer and the heating plate, thereby improving the uniformity of thin film deposition. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects in the prior art, the present invention provides a heating plate, a process chamber, and a processing method of a heating plate, which are used to improve the consistency of temperature between a wafer and each area of ​​the heating plate, thereby improving the uniformity of thin film deposition.

[0007] Specifically, the heating plate provided according to the first aspect of the present invention includes: a heating plate body, used to heat the wafer carried thereon; and an aluminum oxide film layer, which is arranged on the heating plate body and has at least one recessed pattern area on its upper surface, which is used to dissipate heat to the back side of the wafer during the thin film deposition process and support the back side of the wafer via multiple non-pattern areas of equal height.

[0008] Furthermore, in some embodiments of the present invention, the depth of the pattern area is 0.005 mm to 0.05 mm.

[0009] Furthermore, in some embodiments of the present invention, the non-pattern area includes a plurality of columnar structures, wherein the diameter of the columnar structures is 2.5 mm to 15 mm.

[0010] Furthermore, in some embodiments of the present invention, the plurality of columnar structures are distributed in the form of at least one concentric circle with the center point of the heating plate as the center.

[0011] Furthermore, in some embodiments of the present invention, the multiple columnar structures are distributed in the form of three concentric circles with the center point of the heating plate as the center, wherein the diameter of the heating plate is 350 mm, the distribution radius of the columnar structures in the first circle is 40 mm, the distribution radius of the columnar structures in the second circle is 105 mm, and the distribution radius of the columnar structures in the third circle is 155 mm.

[0012] Furthermore, in some embodiments of the present invention, the heating plate further comprises: a heat conduction layer, deposited on the pattern area, for improving the uniformity of heat transfer on the surface of the heating plate.

[0013] Furthermore, in some embodiments of the present invention, the heat conducting layer is made of aluminum nitride material and has a thickness ranging from 3um to 15um.

[0014] In addition, the process chamber provided according to the second aspect of the present invention comprises the heating plate as described in the first aspect of the present invention, which is used to heat the wafer carried thereon.

[0015] In addition, the heating plate processing method provided according to the third aspect of the present invention includes the following steps: preparing a heating plate body; depositing an aluminum oxide film layer on the upper surface of the heating plate body through a surface treatment process; polishing the aluminum oxide film layer to improve the flatness of the film layer; determining a target range and a target depth of a pattern area on the aluminum oxide film layer; and machining the aluminum oxide film layer based on the target range and the target depth to remove the aluminum oxide material to form at least one recessed pattern area.

[0016] Furthermore, in some embodiments of the present invention, the surface treatment process includes at least one of anodizing, thermal spraying and hot melting. The machining process includes milling and / or grinding. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A 3D schematic diagram of the structure of a heating plate provided according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic diagram of the distribution of multiple concentric circles provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A flow chart of a method for processing a heating plate according to some embodiments of the present invention is shown.

[0021] Figure 4 A schematic structural diagram of an aluminum oxide film layer provided according to some embodiments of the present invention is shown.

[0022] Figure 5 A schematic diagram showing the principles of a polishing process provided according to some embodiments of the present invention is shown.

[0023] Figure 6 A schematic structural diagram of a heating plate provided according to some embodiments of the present invention is shown.

[0024] Figure 7 A schematic structural diagram of a heat conduction layer provided according to some embodiments of the present invention is shown.

[0025] Reference numerals:

[0026] 10 Heating plate body

[0027] 20 Aluminum oxide film

[0028] 201 Pattern Area

[0029] 202 Non-pattern area

[0030] 203 Concentric Circles

[0031] 30 Heat transfer layer

[0032] 40 grinding wheel DETAILED DESCRIPTION

[0033] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0034] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0035] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0036] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0037] In the thin film deposition process, since some materials are very sensitive to temperature, high temperature may cause the material structure to change or decompose. Moderately heating the substrate without overheating helps control the deposition process of the material. In addition, some substrate materials (such as plastics and certain types of glass) may deform or be damaged at high temperatures. The use of medium and low temperature heating plates can avoid these problems. Therefore, medium and low temperature heating plates are usually used. However, due to the low temperature of the heating plate, the distance between the wafer and the heating plate usually has a greater impact on the temperature.

[0038] In the prior art, multiple sapphire protrusions are usually pressed into the medium and low temperature heating plate by inlaying to carry the wafer to be heated. Since the height precision of the sapphire protrusion on the surface of the heating plate is relatively high, the installation is difficult, and the force and technique of pressing down are usually difficult to guarantee. If the force is too strong, the sapphire will be pressed too deep, and if the force is too weak, the height of the protrusion will be too high. In addition, the height of multiple sapphire protrusions needs to be consistent, and the overall flatness is difficult to guarantee, which seriously affects the cooling effect of the wafer.

[0039] In order to overcome the above-mentioned defects in the prior art, the present invention provides a heating plate, a process chamber, and a processing method of a heating plate, which are used to improve the consistency of temperature between a wafer and each area of ​​the heating plate, thereby improving the uniformity of thin film deposition.

[0040] In some non-limiting embodiments, the heating disk processing method provided in the second aspect of the present invention can be implemented based on the heating disk provided in the first aspect of the present invention. The heating disk provided in the first aspect of the present invention can be configured in the process chamber provided in the second aspect of the present invention. Specifically, the process chamber includes the heating disk as described in the first aspect of the present invention, which is used to heat the wafer carried thereon.

[0041] Please refer to Figure 1 , Figure 1 A 3D schematic diagram of the structure of a heating plate provided according to some embodiments of the present invention is shown.

[0042] like Figure 1 As shown, the heating plate includes a heating plate body 10 and an aluminum oxide film layer 20. Specifically, the heating plate body 10 is used to heat the wafer carried thereon. The aluminum oxide film layer 20 is disposed on the heating plate body 10, and has at least one concave pattern area 201 on its upper surface, which is used to dissipate heat from the back of the wafer during the thin film deposition process, and supports the back of the wafer via a plurality of non-pattern areas 202 of equal height.

[0043] Further, the depth of the pattern area 201 can be 0.005 mm to 0.05 mm, for example, 0.01 mm, so as to ensure a suitable temperature range, and the non-pattern area 202 can include a plurality of columnar structures. The diameter of the columnar structure can be 2.5 mm to 15 mm, for example, 5 mm, so that it can stably support the wafer thereon. In addition, the number of the columnar structures is usually greater than 9 to further stabilize the wafer thereon.

[0044] Please refer to Figure 2 , Figure 2 A schematic diagram of the distribution of multiple concentric circles provided according to some embodiments of the present invention is shown.

[0045] like Figure 2As shown, a plurality of columnar structures are distributed in the form of at least one concentric circle 203 with the center point of the heating plate as the center.

[0046] In some embodiments, the plurality of columnar structures are distributed in the form of three concentric circles 203 with the center point of the heating plate as the center. The diameter of the heating plate is 350 mm, the distribution radius of the first circle of columnar structures is 40 mm, the distribution radius of the second circle of columnar structures is 105 mm, and the distribution radius of the third circle of columnar structures is 155 mm.

[0047] In some embodiments, the non-pattern area 202 and the pattern area 201 are evenly distributed so that the wafer thereon is evenly heated, thereby improving the heating uniformity.

[0048] The following will describe the preparation process of the above-mentioned heating disk in conjunction with some embodiments of the heating disk processing method. Those skilled in the art will understand that these embodiments of the heating disk processing method are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the heating disk. Similarly, the specific structure of the heating disk is also only some non-limiting implementation methods provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these heating disk processing methods.

[0049] Please refer to Figure 3 to Figure 6 , Figure 3 A flow chart of a method for processing a heating plate according to some embodiments of the present invention is shown. Figure 4 A schematic structural diagram of an aluminum oxide film layer provided according to some embodiments of the present invention is shown. Figure 5 A schematic diagram showing the principles of a polishing process provided according to some embodiments of the present invention is shown. Figure 6 A schematic structural diagram of a heating plate provided according to some embodiments of the present invention is shown.

[0050] like Figure 3 to Figure 6 As shown, during the processing of the heating plate, those skilled in the art may first prepare the heating plate body 10 .

[0051] Then, an aluminum oxide film layer 20 is deposited on the upper surface of the heating plate body 10 by a surface treatment process using a heating plate processing device. Here, the surface treatment process includes at least one of anodizing, thermal spraying, and hot melting.

[0052] Afterwards, the aluminum oxide film layer 20 is polished to improve the flatness of the film layer. The polishing process can be completed by grinding with a grinding wheel 40 .

[0053] Afterwards, the preparation device of the heating plate can determine the target range and target depth of the pattern area 201 on the aluminum oxide film layer 20 .

[0054] Finally, based on the target range and target depth, the aluminum oxide film layer 20 is machined to remove the aluminum oxide material to form at least one recessed pattern area 201. Here, the machining process may include milling and / or grinding. The machine tool may be a five-axis, three-axis, or four-axis machine tool.

[0055] Those skilled in the art will appreciate that the machining examples are only some non-limiting implementations provided by the present invention, which are intended to clearly demonstrate the main concepts of the present invention and to provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the heating plate.

[0056] In some embodiments, a precision sandblasting process may be used, the height accuracy of which may reach ±0.002 mm, thereby further improving the processing accuracy and achieving the accuracy requirement of the protrusion within the range of ±0.01 mm.

[0057] Those skilled in the art will appreciate that the processing method of the heating plate can be implemented by hardware and / or software.

[0058] Please refer to Figure 7 , Figure 7 A schematic structural diagram of a heat conduction layer provided according to some embodiments of the present invention is shown.

[0059] like Figure 7 As shown, the heating plate may further include a heat conducting layer 30, so as to further avoid the situation in which the temperature of the heating plate is not uniform during the actual operation.

[0060] Specifically, the heat conduction layer 30 is deposited on the pattern area 201 to improve the uniformity of heat transfer on the surface of the heating plate. Specifically, the heat conduction layer 30 can be made of aluminum nitride material. The thickness of the heat conduction layer 30 can range from 3um to 15um.

[0061] Those skilled in the art will appreciate that the material and thickness range used for the heat conduction layer 30 are merely some non-limiting embodiments provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and to provide some specific solutions that are convenient for the public to implement, rather than to limit the entire structure of the heat conduction layer 30.

[0062] Optionally, the heat conducting layer 30 may be made of other materials with high thermal conductivity.

[0063] In summary, the heating plate, process chamber, and heating plate processing method provided by the present invention can be used to improve the consistency of temperature between the wafer and each area of ​​the heating plate, thereby improving the uniformity of thin film deposition.

[0064] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0065] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or a combination of the two. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps are generally described above in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. The technician may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as resulting in a departure from the scope of the present invention.

[0066] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functions may be stored or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable media include both computer storage media and communication media, including any media that facilitates the transfer of a computer program from one place to another. Storage media may be any available media that can be accessed by a computer.

[0067] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating plate, characterized in that: include: The heating plate body is used to heat the wafer carried thereon; as well as The aluminum oxide film layer is disposed on the heating plate body, and has at least one recessed pattern area on its upper surface for dissipating heat from the back of the wafer during the thin film deposition process and supporting the back of the wafer via a plurality of non-pattern areas of equal height.

2. The heating plate according to claim 1, characterized in that The depth of the pattern area is 0.005 mm to 0.05 mm.

3. The heating plate according to claim 1 or 2, characterized in that: The non-pattern area includes a plurality of columnar structures, wherein the diameter of the columnar structures is 2.5 mm to 15 mm.

4. The heating plate according to claim 3, characterized in that The multiple columnar structures are distributed in the form of at least one concentric circle with the center point of the heating plate as the center.

5. The heating plate according to claim 4, characterized in that The multiple columnar structures are distributed in the form of three concentric circles with the center point of the heating plate as the center, wherein the diameter of the heating plate is 350 mm, the distribution radius of the columnar structures in the first circle is 40 mm, the distribution radius of the columnar structures in the second circle is 105 mm, and the distribution radius of the columnar structures in the third circle is 155 mm.

6. The heating plate according to claim 1, characterized in that Also includes: The heat conduction layer is deposited on the pattern area to improve the uniformity of heat transfer on the surface of the heating plate.

7. The heating plate according to claim 6, characterized in that The heat conducting layer is made of aluminum nitride material, and / or The thickness of the heat conduction layer ranges from 3um to 15um.

8. A process chamber, characterized in that: It comprises the heating plate as described in claims 1 to 7, used for heating the wafer carried thereon.

9. A method for processing a heating plate, characterized in that: The following steps are involved: Prepare the heating plate body; Depositing an aluminum oxide film layer on the upper surface of the heating plate body through a surface treatment process; Polishing the aluminum oxide film layer to improve the flatness of the film layer; Determining a target range and a target depth of a pattern area on the aluminum oxide film layer; as well as Based on the target range and the target depth, the aluminum oxide film layer is machined to remove the aluminum oxide material to form at least one recessed pattern area.

10. The processing method according to claim 9, characterized in that: The surface treatment process includes at least one of anodizing, thermal spraying and hot melting, and / or The machining process includes milling and / or grinding.

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