Driving device of radio frequency power supply, radio frequency power supply and semiconductor process equipment

Abstract

The embodiment of the invention provides a driving device of a radio frequency power supply, the radio frequency power supply and semiconductor process equipment. Comprising the steps that a radio frequency driving signal input module outputs a radio frequency driving signal; the input end of the gate-level driving amplification module is connected with the output end of the radio frequency driving signal input module, and the gate-level driving amplification module performs primary amplification on a radio frequency driving signal; the input end of the controllable frequency selection network module is connected with the output end of the gate-level driving amplification module, and a radio frequency driving signal matched with the target frequency is gated; the input end of the impedance conversion module is connected with the output end of the controllable frequency selection network module; the input end of the secondary driving amplification module is connected with the output end of the impedance conversion module, and the secondary driving amplification module is used for carrying out secondary amplification on the radio frequency driving signal after primary amplification and outputting radio frequency power; the impedance conversion module performs impedance matching on the gate-level driving amplification module and the secondary driving amplification module; according to the embodiment of the invention, a radio frequency driving signal with a specified frequency is gated through a controllable frequency selection network module; therefore, the driving device multiplexes radio-frequency power supplies with different main frequencies.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor process equipment, and in particular to a driving device of a radio frequency power supply, a radio frequency power supply, and a semiconductor process equipment. Background Art

[0002] In the semiconductor industry, RF power is a core component of semiconductor process equipment. With the change of etching materials and the improvement of etching process, it can be used in a wider frequency range. However, the current RF power is single-frequency, such as only being used at 13.56MHz, and cannot be reused at other main frequencies, which prolongs the development cycle of RF power. Summary of the invention

[0003] In view of the above problems, embodiments of the present invention are proposed to provide a driving device of a radio frequency power supply, a radio frequency power supply, and a semiconductor process equipment that overcome the above problems or at least partially solve the above problems.

[0004] In order to solve the above problems, in a first aspect of the present invention, an embodiment of the present invention discloses a driving device of a radio frequency power supply, comprising:

[0005] A radio frequency drive signal input module, used for outputting a radio frequency drive signal;

[0006] A gate-level drive amplifier module, whose input end is connected to the output end of the RF drive signal input module, and is used to perform primary amplification on the RF drive signal;

[0007] A controllable frequency selection network module, whose input end is connected to the output end of the gate-level driving amplifier module, and the controllable frequency selection network module corresponds to the target frequency based on the numerical value of the internal component, and is used to select the radio frequency driving signal matching the target frequency;

[0008] An impedance transformation module, whose input end is connected to the output end of the controllable frequency selection network module;

[0009] A secondary drive amplifier module, whose input end is connected to the output end of the impedance conversion module, is used to perform secondary amplification on the RF drive signal after primary amplification and output RF power;

[0010] The impedance transformation module is used to perform impedance matching between the gate-level driving amplifier module and the secondary driving amplifier module.

[0011] Optionally, the gate-level driver amplifier module includes:

[0012] A gate-level in-phase drive amplifier circuit, whose input end is connected to the output end of the RF drive signal input module, and whose output end is connected to the controllable frequency selection network module;

[0013] The gate-level inverting drive amplifier circuit has an input end connected to the output end of the radio frequency drive signal input module, and an output end connected to the impedance conversion module.

[0014] Optionally, the gate-level in-phase drive amplifier circuit includes:

[0015] A first gate driver chip, whose input end is connected to the output end of the RF drive signal input module, and whose output end is connected to the controllable frequency selection network module;

[0016] A first resistor, located between the input end of the first gate driver chip and the output end of the RF drive signal input module;

[0017] The gate-level inverting drive amplifier circuit comprises:

[0018] A second gate driving chip, whose input end is connected to the output end of the RF driving signal input module, and whose output end is connected to the impedance conversion module; the second gate driving chip and the first gate driving chip are in opposite phases;

[0019] The second resistor is located between the input end of the second gate driver chip and the output end of the radio frequency drive signal input module.

[0020] Optionally, the controllable frequency selection network module includes:

[0021] The inductor-capacitor frequency selection circuit is connected in series between the gate-level drive amplifier module and the impedance transformation module.

[0022] Optionally, the inductor-capacitor frequency selection circuit includes:

[0023] A variable inductor, one end of which is connected to the gate-level drive amplifier module;

[0024] A variable capacitor has one end connected to the variable inductor and the other end connected to the impedance transformation module.

[0025] Optionally, the controllable frequency selection network module further includes:

[0026] A control unit is connected to the variable inductor and the variable capacitor, and is used to adjust the inductance value of the variable inductor and / or the capacitance value of the variable capacitor.

[0027] Optionally, the impedance transformation module includes:

[0028] A first impedance conversion circuit, whose input end is connected to the controllable frequency selection network module, and whose output end is connected to the secondary drive amplifier module;

[0029] The second impedance conversion circuit has an input end connected to the gate-level inverting drive amplifier circuit, and an output end connected to the secondary drive amplifier module.

[0030] Optionally, the first impedance conversion circuit is the same as the second impedance conversion circuit, and the first impedance conversion circuit and the second impedance conversion circuit include:

[0031] A planar transformer, wherein the primary coil of the planar transformer is connected to the controllable frequency selection network module or the gate-level inverting drive amplifier circuit, and the secondary coil of the planar transformer is connected to the secondary drive amplifier module.

[0032] Optionally, the planar transformer comprises: a planar transformer upper magnetic core, a planar transformer lower magnetic core, a transformer primary coil and a transformer secondary coil.

[0033] The upper magnetic core of the planar transformer and the lower magnetic core of the planar transformer are buckled to form a magnetic path;

[0034] The transformer primary coil and the transformer secondary coil are planar coils and are located in the magnetic path.

[0035] Optionally, the planar coil is formed by printed circuit board metal wires.

[0036] Optionally, the secondary driving amplification module includes:

[0037] A full-bridge rectifier circuit, an input end of which is connected to the first impedance conversion circuit and the second impedance conversion circuit.

[0038] Optionally, the RF drive signal input module, the gate-level drive amplifier module, the controllable frequency selection network module, the impedance transformation module and the secondary drive amplifier module are laid on a heat dissipation metal plate, and the heat dissipation metal plate and the printed circuit board where the planar coil is located form a T-shaped structure.

[0039] Optionally, the plane of the planar coil is parallel to the heat dissipation metal plate, and is used to provide a magnetic field when powered on.

[0040] In the second aspect of the present invention, an embodiment of the present invention discloses a radio frequency power supply, which includes a driving device, a power amplifier and a radio frequency power supply sensor of the radio frequency power supply as described above, wherein the output end of the driving device is connected to the input end of the power amplifier; the output end of the power amplifier is connected to the input end of the radio frequency power supply sensor; and the radio frequency power supply sensor is used to detect the radio frequency power.

[0041] In the third aspect of the present invention, an embodiment of the present invention discloses a semiconductor process equipment, which includes a radio frequency power supply, a radio frequency matcher, and a process chamber. The radio frequency power supply is the above-mentioned radio frequency power supply, the radio frequency power supply is used to generate radio frequency power, and the radio frequency matcher is used to perform impedance matching between the radio frequency power and the load of the process chamber; the process chamber is used to carry wafers to be processed.

[0042] The embodiments of the present invention include the following advantages:

[0043] The embodiment of the present invention outputs a radio frequency driving signal through a radio frequency driving signal input module; the input end of the gate-level driving amplifier module is connected to the output end of the radio frequency driving signal input module to perform primary amplification on the radio frequency driving signal; the controllable frequency selection network module corresponds to the target frequency based on the numerical value of the internal component, and is used to select the radio frequency driving signal matching the target frequency; the input end of the impedance transformation module is connected to the output end of the controllable frequency selection network module; the input end of the secondary driving amplifier module is connected to the output end of the impedance transformation module, and the radio frequency driving signal after primary amplification is secondary amplified to output radio frequency power; the impedance transformation module performs impedance matching on the gate-level driving amplifier module and the secondary driving amplifier module. The driving of the radio frequency power supply is realized by the radio frequency driving signal input module, the gate-level driving amplifier module, the controllable frequency selection network module, the impedance transformation module and the secondary driving amplifier module, and the radio frequency driving signal of the specified frequency is selected by the controllable frequency selection network module; so that the driving device can be reused to radio frequency power supplies with different main frequencies. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 It is a structural block diagram of an embodiment of a driving device of a radio frequency power supply of the present invention;

[0045] Figure 2 is a structural block diagram of another embodiment of a driving device of a radio frequency power supply of the present invention;

[0046] Figure 3 is a circuit schematic diagram of another embodiment of a driving device of a radio frequency power supply of the present invention;

[0047] Figure 4 It is a schematic diagram of circuit node waveforms of another embodiment of a driving device of a radio frequency power supply of the present invention;

[0048] Figure 5 is a transformer schematic diagram of another embodiment of a driving device of a radio frequency power supply of the present invention;

[0049] Figure 6 FIG. 1 is a schematic diagram of the device layout of another embodiment of a driving device of a radio frequency power supply of the present invention. Figure 1 ;

[0050] Figure 7 FIG. 1 is a schematic diagram of the device layout of another embodiment of a driving device of a radio frequency power supply of the present invention. Figure 2 ;

[0051] Figure 8 FIG. 1 is a schematic diagram of the device layout of another embodiment of a driving device of a radio frequency power supply of the present invention. Figure 3 ;

[0052] Fig. 9 A schematic diagram of a device layout of a semiconductor process equipment embodiment of the present invention Figure 2 . DETAILED DESCRIPTION

[0053] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0054] Reference Figure 1 , shows a structural block diagram of an embodiment of a driving device of a radio frequency power supply of the present invention, which may specifically include the following parts:

[0055] A radio frequency drive signal input module, used for outputting a radio frequency drive signal;

[0056] A gate-level drive amplifier module, whose input end is connected to the output end of the RF drive signal input module, and is used to perform primary amplification on the RF drive signal;

[0057] A controllable frequency selection network module, whose input end is connected to the output end of the gate-level driving amplifier module, and the controllable frequency selection network module corresponds to the target frequency based on the numerical value of the internal component, and is used to select the radio frequency driving signal matching the target frequency;

[0058] An impedance transformation module, whose input end is connected to the output end of the controllable frequency selection network module;

[0059] A secondary drive amplifier module, whose input end is connected to the output end of the impedance conversion module, is used to perform secondary amplification on the RF drive signal after primary amplification and output RF power;

[0060] The impedance transformation module is used to perform impedance matching between the gate-level driving amplifier module and the secondary driving amplifier module.

[0061] In an embodiment of the present invention, the driving device may include a radio frequency drive signal input module, a gate-level drive amplifier module, a controllable frequency selection network module, an impedance transformation module, and a secondary drive amplifier module. The radio frequency drive signal input module, the gate-level drive amplifier module, the controllable frequency selection network module, the impedance transformation module, and the secondary drive amplifier module are connected in sequence. That is, the input end of the gate-level drive amplifier module is connected to the output end of the radio frequency drive signal input module, the input end of the controllable frequency selection network module is connected to the output end of the gate-level drive amplifier module, the input end of the impedance transformation module is connected to the output end of the controllable frequency selection network module, and the input end of the secondary drive amplifier module is connected to the output end of the impedance transformation module. The radio frequency drive signal input module outputs the radio frequency drive signal. The gate-level drive amplifier performs a first-stage amplification on the radio frequency drive signal output by the previous stage; the controllable frequency selection network can be determined to select the set frequency when the user selects a certain set frequency; and the radio frequency drive signal after primary amplification is selected. The impedance transformation part performs impedance matching between the gate-level drive amplifier circuit and the secondary drive amplifier circuit to achieve the best output efficiency; the secondary drive amplifier part performs a second amplification on the radio frequency drive signal amplified by the first stage. In addition, in the embodiment of the present invention, a driving output part may be included, which is connected to the output end of the secondary driving amplifier module and is used to output the secondary amplified RF driving signal, that is, output RF power to the outside.

[0062] The embodiment of the present invention outputs a radio frequency driving signal through a radio frequency driving signal input module; the input end of the gate-level driving amplifier module is connected to the output end of the radio frequency driving signal input module to perform primary amplification on the radio frequency driving signal; the controllable frequency selection network module corresponds to the target frequency based on the numerical value of the internal component, and is used to select the radio frequency driving signal matching the target frequency; the input end of the impedance transformation module is connected to the output end of the controllable frequency selection network module; the input end of the secondary driving amplifier module is connected to the output end of the impedance transformation module, and the radio frequency driving signal after primary amplification is secondary amplified to output radio frequency power; the impedance transformation module performs impedance matching on the gate-level driving amplifier module and the secondary driving amplifier module. The driving of the radio frequency power supply is realized by the radio frequency driving signal input module, the gate-level driving amplifier module, the controllable frequency selection network module, the impedance transformation module and the secondary driving amplifier module, and the radio frequency driving signal of the specified frequency is selected by the controllable frequency selection network module; so that the driving device can be reused to radio frequency power supplies with different main frequencies.

[0063] Reference Figure 2 , shows a structural block diagram of another embodiment of a driving device of a radio frequency power supply of the present invention, which may specifically include the following parts:

[0064] A radio frequency drive signal input module, used for outputting a radio frequency drive signal;

[0065] A gate-level drive amplifier module, whose input end is connected to the output end of the RF drive signal input module, and is used to perform primary amplification on the RF drive signal;

[0066] A controllable frequency selection network module, whose input end is connected to the output end of the gate-level driving amplifier module, is used to select the RF driving signal after primary amplification;

[0067] An impedance transformation module, whose input end is connected to the output end of the controllable frequency selection network module;

[0068] A secondary drive amplifier module, whose input end is connected to the output end of the impedance conversion module, is used to perform secondary amplification on the RF drive signal after primary amplification and output RF power;

[0069] The impedance transformation module is used to perform impedance matching between the gate-level driving amplifier module and the secondary driving amplifier module.

[0070] Wherein, the gate-level drive amplifier module includes:

[0071] A gate-level in-phase drive amplifier circuit, whose input end is connected to the output end of the RF drive signal input module, and whose output end is connected to the controllable frequency selection network module;

[0072] The gate-level inverting drive amplifier circuit has an input end connected to the output end of the radio frequency drive signal input module, and an output end connected to the impedance conversion module.

[0073] In an embodiment of the present invention, the driving device of the RF power supply may include a RF driving signal input module, a gate-level in-phase driving amplifier circuit, a gate-level inverting driving amplifier circuit, a controllable frequency selection network module, a first impedance conversion circuit, a second impedance conversion circuit, and a secondary driving amplifier module; the output of the RF driving signal input module is respectively connected to the input of the gate-level in-phase driving amplifier circuit and the gate-level inverting driving amplifier circuit, the output of the gate-level in-phase driving amplifier circuit is connected to the input of the controllable frequency selection network module, the output of the controllable frequency selection network is connected to the input of the first impedance conversion circuit, the output of the first impedance conversion circuit is connected to the input of the secondary driving amplifier module, and the output end of the secondary driving amplifier module is connected to the driving The output is positively connected; the output of the gate-level inverting drive amplifier circuit is connected to the input of the second impedance conversion circuit, the output of the second impedance conversion circuit is connected to the input of the secondary drive amplifier module, and the output of the secondary drive amplifier module is negatively connected to the drive output; the RF drive signal input module provides the drive signal required for the RF power output; the gate-level in-phase drive amplifier circuit is used to amplify the RF drive signal input by the front stage in-phase; the gate-level inverting drive amplifier is used to invert the RF drive signal input by the front stage, and the controllable frequency selection network can be composed of a variable capacitor and a variable inductor, one end of the variable inductor is connected to the gate-level drive amplifier module; one end of the variable capacitor is connected to the variable inductor, and the other end is connected to the impedance conversion module. When the user selects a set frequency, the RF signal of the set frequency is gated. In addition, the controllable frequency selection network module can have a control unit. The control unit is connected to the variable inductor and the variable capacitor respectively. The control unit gates the set frequency by setting the preset variable capacitor and variable inductor position, that is, changing the inductance value of the variable inductor, and / or the capacitance value of the variable capacitor. The first impedance conversion circuit is used to match the gate-level in-phase drive amplifier circuit with the corresponding field effect transistor in the secondary drive amplifier module to achieve the best output efficiency; the second impedance conversion circuit is used to match the gate-level inverted drive amplifier circuit with the corresponding field effect transistor in the secondary drive amplifier module to achieve the best output efficiency. The secondary drive amplifier module is used to perform secondary amplification on the signal amplified in the first stage; the drive output positive is used to output the signal in phase with DDS (Direct Digital Synthesizer) after secondary amplification; the drive output negative can output the signal in phase with the RF drive signal after secondary amplification.By inputting the RF driving signal into the gate-level in-phase driving amplifier and the gate-level inverting driving amplifier respectively, the gate-level in-phase driving amplifier and the gate-level inverting driving amplifier output square wave signals with staggered phases and larger amplitudes. The gate-level in-phase driving amplifier circuit passes through the first impedance conversion circuit and enters the corresponding field effect tubes in the secondary driving amplifier module respectively, and drives the output positive from the common end of the corresponding field effect tubes in the secondary driving amplifier module. The gate-level inverting driving amplifier passes through the second impedance conversion circuit and enters the corresponding field effect tubes in the secondary driving amplifier module respectively, and drives the output negative from the common end of the corresponding field effect tubes in the secondary driving amplifier module. At this time, the driving output positive and the driving output negative output square wave signals with staggered phases and larger amplitudes are output to drive the subsequent power amplifier circuit. By passing a single square wave signal through the gate-level in-phase driving and the gate-level inverting driving respectively, and then through the secondary amplification, two-way 100-watt power driving output with opposite phases can be realized, and the single power driving ratio is high.

[0074] You can refer to Figure 3 The gate-level drive amplifier module is composed of a gate-level in-phase drive amplifier circuit and a gate-level inverted drive amplifier circuit, which work simultaneously to realize the function of two inverted drive outputs; the impedance conversion module is composed of a first impedance conversion circuit and a second impedance conversion circuit. The secondary drive amplifier module is composed of a full-bridge rectifier circuit. The input end of the full-bridge rectifier circuit is connected to the first impedance conversion circuit and the second impedance conversion circuit. The full-bridge rectifier circuit is composed of field effect tubes Q1 to Q4, and the four field effect tubes are divided into two groups of field effect tubes Q1 and field effect tubes Q4, and field effect tubes Q2 and field effect tubes Q3. The two groups of field effect tubes are alternately turned on. The variable inductor L1 and the variable capacitor C1 form a series resonance for selecting the baseband signal; the resistors R4, R5, R6 and R7 are respectively connected in series with the gates of the field effect transistors Q1, Q2, Q3 and Q4 to reduce signal overshoot and prevent oscillation; the inductor L2 and the resistor R8, the inductor L3 and the resistor R9, the inductor L4 and the resistor R10, the inductor L5 and the resistor R11, whose gates of the field effect transistors Q1, Q2, Q3 and Q4 are connected to the ground, form a discharge circuit of the field effect transistors Q1, Q2, Q3 and Q4, so that they can be discharged quickly when the field effect transistors are turned off.

[0075] The RF drive signal input module can use an SMA (surface mount antenna) power supply as a power supply for generating the RF drive signal. The SMA inner core is connected to one end of the resistor R1, one end of the resistor R2, and one end of the resistor R3. The other end of the resistor R1 is grounded. The other end of the resistor R2 is connected to the input pin 1 of the same-phase gate driver U1, the 5th pin is the output pin, connected to one end of the variable inductor L1, the 3rd pin is connected to DC1 for power supply, the 2nd and 4th pins are grounded, and the gate-level same-phase drive amplifier circuit adopts the first gate driver chip U1; the other end of the resistor R3 is connected to the input pin 1 of the anti-phase gate driver chip U2, the 5th pin is the output pin, the 3rd pin is connected to DC1 for power supply, the 2nd and 4th pins are grounded, and the gate-level same-phase drive amplifier circuit includes the anti-phase gate driver chip U2; the other end of the variable inductor L1 is connected to one end of the series variable capacitor C1, and the other end of the series variable capacitor C1 is respectively connected to the same-name terminal 1 of the primary coil of the transformer T1 and the opposite-name terminal 2 of the primary coil of the transformer T2; the 5th pin of the anti-phase gate driver U2 is respectively connected to the opposite-name terminal 2 of the primary coil of the transformer T1 and the same-name terminal of the primary coil of the transformer T2 The same-name terminal 3 pin of the secondary 1st coil of the transformer T1 is connected to one end of the inductor L3 and one end of the resistor R5, the other end of the inductor L3 is connected to one end of the resistor R9, the other end of the resistor R9 is connected to the radio frequency ground GND1, and the opposite-name terminal 4 pin of the secondary 1st coil of the transformer T1 is connected to the radio frequency ground GND1; the other end of the resistor R5 is connected to the gate 1 pin of the field effect tube Q2, the source 3 pin of the field effect tube Q2 is connected to the radio frequency ground GND1, the drain 2 pin of the field effect tube Q2 is respectively connected to the radio frequency drive output RF_DRIVE+, the source 3 pin of the field effect tube Q1, the same-name terminal 5 pin of the secondary 2nd coil of the transformer T1 and one end of the resistor R8, the other end of the resistor R8 is connected to one end of the inductor L2, the other end of the inductor L2 is connected to the opposite-name terminal 6 pin of the secondary 2nd coil of the transformer T1 and one end of the resistor R4, the other end of the resistor R4 is connected to the gate 1 pin of the field effect tube Q1, and the drain 2 pin of the field effect tube Q1 is connected to the power supply DC BUSS; The controllable frequency selection network is composed of a variable series capacitor and a variable series inductor controlled by a control unit. The series variable inductor L1 and the series variable capacitor C1 are respectively connected to the control unit. When the user selects the corresponding frequency through the control unit, the series variable inductor L1 and the series variable capacitor C1 are respectively changed to the corresponding preset positions to achieve the corresponding frequency selection output.

[0076] Pin 5 of the inverting gate driver chip U2 is connected to the same-name terminal pin 1 of the primary coil of the transformer T2 and the opposite-name terminal pin 2 of the primary coil of the transformer T1; the same-name terminal pin 3 of the secondary coil of the transformer T2 is connected to one end of the inductor L5 and one end of the resistor R7, the other end of the inductor L5 is connected to one end of the resistor R11, the other end of the resistor R11 is connected to the radio frequency ground GND1, and the opposite-name terminal pin 4 of the secondary coil of the transformer T2 is connected to the radio frequency ground GND1; the other end of the resistor R7 is connected to the gate pin 1 of the field effect transistor Q4, and the source pin 2 of the field effect transistor Q4 is connected to the gate pin 1 of the field effect transistor Q4. The gate pin 3 is connected to the radio frequency ground GND1, the drain pin 2 of the field effect tube Q4 is respectively connected to the radio frequency drive output RF_DRIVE-, the source pin 3 of the field effect tube Q3, the same-name terminal pin 5 of the secondary 2 coil of the transformer T2 and one end of the resistor R10, the other end of the resistor R10 is connected to one end of the inductor L4, the other end of the inductor L4 is connected to the opposite-name terminal pin 6 of the secondary 2 coil of the transformer T2 and one end of the resistor R6, the other end of the resistor R6 is connected to the gate pin 1 of the field effect tube Q3, and the drain pin 2 of the field effect tube Q3 is connected to the power supply DC BUSS.

[0077] Field effect Q1 and field effect Q4, field effect Q2 and field effect Q3 are two groups, and the two groups of field effect tubes are turned on alternately. Figure 4 As shown, DDS is positive and negative 5V, duty cycle 50%, and frequency is the square wave signal input preset by the user. The default frequency in this case is 13.56MHz. One way is amplified by gate-level in-phase drive and becomes a square wave model from 0V to DC1. DC1 is the power supply voltage of gate driver chips U1 and U2, which is generally DC10~15V. After impedance transformation 1 and secondary drive amplification, the square wave signal from 0V to DC1 is further amplified to become a square wave signal from 0V to DC BUSS. DC BUSS is the power supply voltage of field effect tubes Q1, field effect Q2, field effect Q3, and field effect Q4, which is generally DC100~200V. The other DDS signal is amplified by gate-level inverting drive and becomes a square wave model from DC1 to 0V. After impedance transformation 2 and secondary drive amplification, the square wave signal from DC1 to 0V is further amplified to become a square wave signal from DCBUSS to 0V.

[0078] When the DDS IN (RF drive signal) input signal is high, it is still high after driving the MIC4420 chip through the same-phase gate, that is, pin 1 of transformer T1 is at a high level, and pins 3 and 5 of the transformer output same-name terminal T1 are at a high level, the VGS of field effect transistor Q1 is at a low level, the field effect transistor Q1 is cut off, the VGS of field effect transistor Q2 is at a high level, the field effect transistor Q2 is turned on, and the output RF Drive-output GND1 level; similarly, when the DDS IN input signal is high, it becomes low after driving the chip through the inverting gate, that is, pin 1 of transformer T2 is at a low level, and pins 3 and 5 of the transformer output same-name terminal T2 are at a low level, the VGS of field effect transistor Q4 is at a low level, the field effect transistor Q4 is cut off, the VGS of field effect transistor Q3 is at a high level, the field effect transistor Q3 is turned on, and the output RF Drive-output DC BUSS level. Similarly, when the DDS IN output signal is low, RF Drive+ and RF Drive- are exactly opposite to those when they are high. In this way, the input signal is amplified in two stages, and the drive power output can reach hundreds of watts, which can further drive the subsequent power amplifier module to achieve kilowatt-level RF power conversion.

[0079] The controllable frequency selection network module can be composed of an inductor and capacitor frequency selection circuit, which is connected in series with the gate-level drive amplifier module and the impedance conversion module, and the target frequency of the selection is determined based on the size of the inductance and capacitance in the inductor and capacitor frequency selection circuit. Among them, the inductor and capacitor frequency selection circuit can include a variable inductor L1 and a variable capacitor C. The variable inductor L1, the variable capacitor C, and the primary coil inductance of the impedance converter T1 form a series resonance, which works at 13.56MHz by default. Under the control of the control unit, the values ​​of the variable inductor L1 and the variable variable capacitor C1 are adjusted to make them resonate with the primary coil inductance of the impedance converter T1 at other frequencies to achieve broadband output. That is, the controllable frequency selection network is composed of a variable series capacitor and a variable series inductor controlled by the control unit, and the series inductor L1 and the series capacitor C1 are respectively connected to the control unit. When the user selects the corresponding frequency through the control unit, the series inductor L1 and the series capacitor C1 are respectively transformed to the corresponding preset positions to achieve the corresponding frequency selection output. By adjusting the values ​​of the variable inductor L1 and the variable capacitor C1 through the control unit, the variable inductor L1, the variable capacitor C1, and the primary coil inductance of the impedance converter T1 resonate at a set frequency of 2MHz or 27MHz, and a power drive output of 2MHz or 27MHz can be achieved, thereby realizing the rapid reuse of 2M products or 27MHz products. In the present invention, the variable inductor L1 is not limited to an independent adjustable inductor, and can be composed of multiple adjustable inductors or an adjustable inductor and a fixed inductor in series. Similarly, the variable capacitor C1 is not limited to an independent adjustable capacitor, and can be composed of multiple adjustable capacitors or an adjustable capacitor and a fixed capacitor in parallel.

[0080] In an embodiment of the present invention, the first impedance transformation circuit and the second impedance transformation circuit use a planar transformer for impedance matching. The planar transformer includes: a planar transformer upper magnetic core, a planar transformer lower magnetic core, a transformer primary coil and a transformer secondary coil. The planar transformer upper magnetic core and the planar transformer lower magnetic core are buckled to form a magnetic path. The transformer primary coil and the transformer secondary coil are planar coils and are located in the magnetic path.

[0081] The planar transformer includes a planar transformer upper core and a planar transformer lower core, and is composed of a transformer primary, a transformer secondary 1, and a transformer secondary 2. The planar transformer upper core and the planar transformer lower core are buckled together to form the magnetic path of the transformer; the transformer primary, the transformer secondary 1, and the transformer secondary 2 form the primary and secondary sides of the transformer. The specific planar transformer uses a nickel-zinc material planar ER type transformer with a ui value of 100. The transformer magnetic material is buckled on both sides of the PCB board, and the outside is clamped with a clamp. You can refer to Figure 5 , the primary and secondary coils abandon the traditional winding method and use PCB lines instead. This method has good processing consistency and impedance consistency and small size. The PCB board uses FR4 mixed pressure process, with a total of 5 layers, of which the 1st, 3rd, and 5th layers are FR4 boards, and the 2nd and 4th layers are PP boards, forming 6 wiring layers. The PCB board lines and the ER-type magnetic core transformer form micro-planar transformers T1 and T2, which are the first impedance transformation circuit and the first impedance transformation circuit; the primary and secondary transformation ratio of the planar transformer can be set according to demand, and the embodiment of the present invention is not limited. By replacing the traditional cable winding with PCB routing, buckling the ER-type magnetic core, and clamping the outside with a clamp, a micro-planar transformer is formed. This structure is simple, small in size, has good processing consistency, and is easy to assemble.

[0082] Furthermore, the RF drive signal input module, the gate-level drive amplifier module, the controllable frequency selection network module, the impedance transformation module and the secondary drive amplifier module are laid on a heat dissipation metal plate, and the heat dissipation metal plate and the printed circuit board where the planar coil is located form a T-shaped structure.

[0083] like Figure 6 and Figure 7 As shown, the entire heat dissipation copper plate and PCB plate are arranged in an inverted T-shaped space, which greatly saves space. Furthermore, the plane of the planar coil is parallel to the heat dissipation metal plate, which is used to provide a magnetic field when powered on. By cleverly designing a three-dimensional structure, the volume of the drive circuit is greatly reduced, thereby realizing the miniaturization of the RF power supply product.

[0084] You can refer to Figure 8 , process the heat dissipation copper plate with a length of 120mm, a width of 30mm and a thickness of 5mm, such as Figure 6As shown in the figure, 1 is an insulating heat dissipation ceramic sheet, 2 is a heat dissipation copper plate, 3 is a gate driver chip U2, 4 is a gate driver chip U1, and 5 is a field effect tube. Figure 8 Shallow grooves are dug on the copper plate shown in the figure where U1, U2, Q1, Q2, Q3, and Q4 need to be welded and fixed. The groove size is the same width as the bonding bottom of the device to be welded, and a tolerance is left. A ceramic sheet of the same width as the bottom plate is welded under the field effect tubes Q1, Q2, Q3, and Q4 to insulate the drain from the ground. First, place the device to be welded in the welding position and fix it with fastening screws to prevent displacement during welding. Use welding tools and weld it on the heating table at one time to form the gate driver chips U1, U2, field effect tubes Q1, Q2, Q3, and Q4 into a complete machine drive module for easy installation and maintenance. The heat dissipation copper plate is fixed on the long water cooling pipe with three screws, and thermal conductive silicone grease is applied to the back of the heat dissipation copper plate.

[0085] An embodiment of the present invention also discloses a radio frequency power supply, which includes a driving device, a power amplifier and a radio frequency power supply sensor of the radio frequency power supply as described above, wherein the output end of the driving device is connected to the input end of the power amplifier; the output end of the power amplifier is connected to the input end of the radio frequency power supply sensor; and the radio frequency power supply sensor is used to detect the radio frequency power.

[0086] Furthermore, an embodiment of the present invention also discloses a semiconductor process equipment, which includes a radio frequency power supply, a radio frequency matcher, and a process chamber. The radio frequency power supply is the above-mentioned radio frequency power supply, the radio frequency power supply is used to generate radio frequency power, and the radio frequency matcher is used to perform impedance matching between the radio frequency power and the load of the process chamber; the process chamber is used to carry wafers to be processed.

[0087] For example, see Fig. 9, the conductor process equipment can be an ICP (inductively coupled plasma) etching equipment. ICP etching equipment usually includes five parts: Source power source, Bias power source, reaction chamber, upper matcher, and lower matcher. The output of the Source power source is connected to the input of the upper matcher, the output of the Bias power source is connected to the input of the lower matcher, and the output of the upper matcher and the output of the lower matcher are respectively connected to the reaction chamber. The Source power source is used to provide the energy required for plasma excitation; the upper matcher is used to impedance match the Source power source and the reaction chamber so that the reaction chamber obtains the maximum load power; the Bias power source is used to provide the energy required for plasma bias; the lower matcher is used to impedance match the Bias power source and the reaction chamber so that the reaction chamber obtains the maximum load power; the reaction chamber is used to provide the environment required for plasma excitation. The broadband RF power drive circuit is applied to the 13.56MHz pulse RF power supply, so that the structure of the RF part of the 13.56MHz pulse RF power supply is simplified and does not occupy too much space, thereby reducing the overall size of the power supply; the drive module has a high unit driving ratio and can drive a maximum RF power output of 5.5KW; it can not only be used in the 13.56MHz frequency RF power supply, but also can control the series variable inductor L1 and the series variable capacitor C1 through a controllable frequency selection network. When the user selects the corresponding frequency through the control unit, the series variable inductor L1 and the series variable capacitor C1 are respectively changed to the corresponding preset positions to achieve the corresponding frequency selection output, and the values ​​of the specific components variable inductor L1 and variable capacitor C1 are adjusted so that the variable inductor L1 and the variable capacitor C1, and the primary coil inductance of the impedance converter T1 resonate at a frequency of 2MHz or 27MHz, so that a power drive output of 2MHz or 27MHz can be achieved, thereby realizing the reuse of 2MHz or 27MHz products. Etching equipment using the power supply of this solution can quickly adapt to new processes and improve product competitiveness by reusing similar products; it can achieve greater power output capacity under the same size of RF power supply, which helps the etching equipment to be suitable for high-power etching applications; as the size of the RF power supply decreases, the overall size of the etching equipment is reduced, which helps the etching equipment to develop in the direction of integration.

[0088] It should be noted that, for the sake of simplicity, the method embodiments are described as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present invention are not limited by the order of the actions described, because according to the embodiments of the present invention, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present invention.

[0089] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0090] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0091] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0092] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0093] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0094] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0095] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0096] The above is a detailed introduction to a driving device of an RF power supply, an RF power supply, and a semiconductor process equipment provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A driving device for a radio frequency power source, characterized in that: include: A radio frequency drive signal input module, used for outputting a radio frequency drive signal; A gate-level drive amplifier module, whose input end is connected to the output end of the RF drive signal input module, and is used to perform primary amplification on the RF drive signal; A controllable frequency selection network module, whose input end is connected to the output end of the gate-level driving amplifier module, and the controllable frequency selection network module corresponds to the target frequency based on the numerical value of the internal component, and is used to select the radio frequency driving signal matching the target frequency; An impedance transformation module, whose input end is connected to the output end of the controllable frequency selection network module; A secondary drive amplifier module, whose input end is connected to the output end of the impedance conversion module, is used to perform secondary amplification on the RF drive signal after primary amplification and output RF power; The impedance transformation module is used to perform impedance matching between the gate-level driving amplifier module and the secondary driving amplifier module.

2. The driving device of the radio frequency power supply according to claim 1, characterized in that: The gate-level driver amplifier module comprises: A gate-level in-phase drive amplifier circuit, whose input end is connected to the output end of the RF drive signal input module, and whose output end is connected to the controllable frequency selection network module; The gate-level inverting drive amplifier circuit has an input end connected to the output end of the radio frequency drive signal input module, and an output end connected to the impedance conversion module.

3. The driving device of the radio frequency power supply according to claim 2, characterized in that: The gate-level in-phase drive amplifier circuit comprises: A first gate driver chip, whose input end is connected to the output end of the RF drive signal input module, and whose output end is connected to the controllable frequency selection network module; A first resistor, located between the input end of the first gate driver chip and the output end of the RF drive signal input module; The gate-level inverting drive amplifier circuit comprises: A second gate drive chip, whose input end is connected to the output end of the RF drive signal input module, and whose output end is connected to the impedance conversion module; the second gate drive chip and the first gate drive chip are in opposite phases; The second resistor is located between the input end of the second gate driver chip and the output end of the radio frequency drive signal input module.

4. The driving device of the radio frequency power supply according to claim 1 or 2, characterized in that: The controllable frequency selection network module includes: The inductor-capacitor frequency selection circuit is connected in series between the gate-level drive amplifier module and the impedance transformation module.

5. The driving device of the radio frequency power supply according to claim 4, characterized in that: The inductor-capacitor frequency selection circuit comprises: A variable inductor, one end of which is connected to the gate-level drive amplifier module; A variable capacitor has one end connected to the variable inductor and the other end connected to the impedance transformation module.

6. The driving device of the radio frequency power supply according to claim 5, characterized in that: The controllable frequency selection network module also includes: A control unit is connected to the variable inductor and the variable capacitor, and is used to adjust the inductance value of the variable inductor and / or the capacitance value of the variable capacitor.

7. The driving device of the radio frequency power supply according to claim 2 or 3, characterized in that: The impedance transformation module comprises: A first impedance conversion circuit, whose input end is connected to the controllable frequency selection network module, and whose output end is connected to the secondary drive amplifier module; The second impedance conversion circuit has an input end connected to the gate-level inverting drive amplifier circuit, and an output end connected to the secondary drive amplifier module.

8. The driving device of the radio frequency power supply according to claim 7, characterized in that: The first impedance conversion circuit is the same as the second impedance conversion circuit, and the first impedance conversion circuit and the second impedance conversion circuit include: A planar transformer, wherein the primary coil of the planar transformer is connected to the controllable frequency selection network module or the gate-level inverting drive amplifier circuit, and the secondary coil of the planar transformer is connected to the secondary drive amplifier module.

9. The driving device of the radio frequency power supply according to claim 8, characterized in that: The planar transformer comprises: a planar transformer upper magnetic core, a planar transformer lower magnetic core, a transformer primary coil and a transformer secondary coil. The upper magnetic core of the planar transformer and the lower magnetic core of the planar transformer are buckled to form a magnetic path; The transformer primary coil and the transformer secondary coil are planar coils and are located in the magnetic path.

10. The driving device of the radio frequency power supply according to claim 9, characterized in that: The planar coil is formed by printed circuit board metal lines.

11. The driving device of the radio frequency power supply according to claim 7, characterized in that: The secondary drive amplification module comprises: A full-bridge rectifier circuit, an input end of which is connected to the first impedance conversion circuit and the second impedance conversion circuit.

12. The driving device of the radio frequency power supply according to claim 9, characterized in that: The RF drive signal input module, the gate-level drive amplifier module, the controllable frequency selection network module, the impedance transformation module and the secondary drive amplifier module are laid on a heat dissipation metal plate, and the heat dissipation metal plate and the printed circuit board where the planar coil is located form a T-shaped structure.

13. The driving device of the radio frequency power supply according to claim 12, characterized in that: The plane of the planar coil is parallel to the heat dissipation metal plate and is used to provide a magnetic field when powered on.

14. A radio frequency power supply, characterized in that: The RF power supply includes a RF power drive device, a power amplifier and a RF power sensor as described in any one of claims 1 to 11, wherein the output end of the drive device is connected to the input end of the power amplifier; the output end of the power amplifier is connected to the input end of the RF power sensor; and the RF power sensor is used to detect the RF power.

15. A semiconductor process equipment, characterized in that: The semiconductor process equipment includes a radio frequency power supply, a radio frequency matcher, and a process chamber. The radio frequency power supply is the radio frequency power supply according to claim 12, and the radio frequency power supply is used to generate radio frequency power. The radio frequency matcher is used to perform impedance matching between the radio frequency power and the load of the process chamber; the process chamber is used to carry wafers to be processed.

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