Mechanical oscillator quantum device based on semiconductor thin film material, preparation method and reading device thereof

Abstract

The present application relates to a mechanical oscillator quantum device based on semiconductor film materials, a preparation method thereof, and a reading device, the reading device comprising: a bracket; a substrate silicon wafer, arranged on the surface of the bracket; a semiconductor film, located on the first surface of the substrate silicon wafer, wherein the semiconductor film comprises an attached portion and a suspended portion; an antenna, which is a non-enclosed structure, arranged at the center of the surface of the suspended portion; a stacked piezoelectric brake device, which is formed by stacking piezoelectric materials and connected to the bracket; a magnetic device, arranged on the stacked piezoelectric brake device, corresponding to the antenna in position; a conductive structure, located on the semiconductor film, connected to the antenna, and used to detect the mechanical oscillator signal generated by the suspended portion at room temperature. According to the scheme provided in the present application, the technical means of reading mechanical oscillators by magnon-phonon coupling is adopted, which overcomes the problem that the current testing of mechanical oscillators requires an extremely low temperature environment, and the signal of the mechanical oscillator can be read at room temperature.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor device preparation, and in particular to a mechanical oscillator quantum device based on semiconductor thin film materials, a preparation method thereof, and a reading device. Background Art

[0002] Quantum photonic devices are a crucial research topic in the field of quantum information and modern quantum technology. High-quality macroscopic mechanical oscillators have broad application prospects in quantum information technology fields such as quantum precision measurement and sensing, quantum information storage, and quantum interconnection. Specifically, the applications of high-quality mechanical oscillators include micro-electromechanical sensors, radio and microwave frequency filters, clocks, future computing technologies, and basic scientific testing. As sensors, they have been used in inertial and gyroscope navigation, gas and biochemical sensing, atomic force microscopy, magnetic measurement, acoustic and temperature sensing, single protein spectroscopy, and single molecule detection. These applications are key elements of future computer technology based on nanomechanical motion and future quantum information technology because they can regulate various quantum degrees of freedom. At the same time, high-quality mechanical oscillators are also one of the necessary conditions for exploring novel quantum physical effects, such as the ground state cooling problem of mechanical oscillators, quantum entanglement, etc. At present, the means of reading mechanical oscillators are mostly realized through superconducting circuits.

[0003] However, superconducting circuits require a dilution refrigerator to provide an extremely low temperature environment, which greatly increases the cost and difficulty of the experiment. Summary of the invention

[0004] In view of the above-mentioned problems existing in the prior art, this application designs a device for reading mechanical oscillator signals at room temperature based on the magneton-phonon coupling mechanism. Based on the magneto-acoustic coupling mechanism, the various characteristics such as strain carried by sound waves are used to manipulate magnetic and spin phenomena, which has promoted a large number of research progress. These studies will promote the development of new, ultrafast, highly integrated, energy-saving applications in spin electronics and magnetic storage devices.

[0005] According to a first aspect of the present application, a mechanical vibrator reading device based on a semiconductor thin film material is provided, characterized in that it includes:

[0006] Bracket;

[0007] A substrate silicon wafer is arranged on the surface of the support;

[0008] A semiconductor film is located on the first surface of the substrate silicon wafer, wherein the semiconductor film includes an attached portion and a suspended portion, the attached portion is located on the first surface of the substrate silicon wafer, and the suspended portion is formed by etching the second surface of the substrate silicon wafer until the semiconductor film;

[0009] The antenna is a non-enclosed structure and is arranged at the center of the surface of the suspended part;

[0010] A stacked piezoelectric brake device, which is formed by stacking piezoelectric materials and connected to the bracket;

[0011] a magnetic device, disposed on the stacked piezoelectric brake device, corresponding in position to the antenna, wherein the semiconductor film is coupled to the magnetic device through the antenna to form a magnon-phonon coupling; and

[0012] The conductive structure is located on the semiconductor film and connected to the antenna, and is used to detect the mechanical oscillator signal generated by the suspended part at room temperature.

[0013] According to a second aspect of the present application, a mechanical oscillator quantum device based on semiconductor thin film material is provided, characterized in that it includes:

[0014] Substrate silicon wafer;

[0015] A semiconductor film is located on the first surface of the substrate silicon wafer, wherein the semiconductor film includes an attached portion and a suspended portion, the attached portion is located on the first surface of the substrate silicon wafer, and the suspended portion is formed by etching the second surface of the substrate silicon wafer until the semiconductor film;

[0016] The antenna is a non-enclosed structure and is disposed at the center of the surface of the suspended portion, wherein the semiconductor film is coupled to the magnetic device through the antenna to form a magnon-phonon coupling; and

[0017] The conductive structure is located on the semiconductor film and connected to the antenna, and is used to detect the mechanical oscillator signal generated by the suspended part at room temperature.

[0018] According to a third aspect of the present application, a method for preparing a mechanical oscillator quantum device based on semiconductor thin film materials is provided, characterized by comprising:

[0019] Generating a semiconductor thin film on a first surface of a substrate silicon wafer by a low pressure chemical vapor deposition process;

[0020] Spin-coating photoresist on the second surface of the substrate silicon wafer, forming a pattern of the suspended portion of the semiconductor thin film on the second surface of the substrate silicon wafer by photolithography technology, and etching the substrate silicon wafer corresponding to the pattern of the suspended portion of the semiconductor thin film on the second surface of the substrate silicon wafer until the semiconductor thin film by etching technology to form the suspended portion of the semiconductor thin film;

[0021] Spin-coating photoresist on the surface of the semiconductor film, and forming antenna and conductive structure patterns on the surface of the semiconductor film by photolithography technology;

[0022] Growing a metal layer in the region of the antenna and the conductive structure pattern and the stripping region of the semiconductor film by micro-nano processing sputtering or evaporation technology, wherein the stripping region is a region on the semiconductor film different from the antenna and the conductive structure pattern; and

[0023] The metal layer in the stripping area of ​​the semiconductor film is removed by a stripping technique to obtain the antenna and the conductive structure on the surface of the semiconductor film.

[0024] According to the mechanical oscillator quantum device based on semiconductor thin film material and its preparation method and reading device provided in the present application, the technical means of reading mechanical oscillators by magnon-phonon coupling is adopted, which overcomes the problem that the current testing of mechanical oscillators based on superconducting circuits requires an extremely low temperature environment. The mechanical oscillator signal can be read in a room temperature environment, opening up a new way to realize new, ultrafast, highly integrated, energy-saving spin electronics and magnetic storage devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without exceeding the scope of protection required by the present application.

[0026] Figure 1 This is a front view of a mechanical oscillator reading device based on semiconductor thin film material according to an embodiment of the present application.

[0027] Figure 2 It is a front view of a mechanical oscillator reading device based on semiconductor thin film material according to an embodiment of the present application.

[0028] Figure 3 It is a top view of a mechanical vibrator reading device based on semiconductor thin film material according to an embodiment of the present application.

[0029] Figure 4 It is a schematic diagram of the preparation process of a mechanical oscillator quantum device based on semiconductor thin film materials according to an embodiment of the present application.

[0030] Figure 5 It is a flow chart of a method for preparing a mechanical oscillator quantum device based on semiconductor thin film materials according to an embodiment of the present application. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0032] Throughout the specification and claims, terms may have nuanced meanings that are suggested or implied in the context rather than explicitly stated. Similarly, the phrases "in one embodiment" or "in some embodiments" used herein do not necessarily refer to the same embodiment, and the phrases "in another embodiment" or "in other embodiments" used herein do not necessarily refer to different embodiments. The phrases "in one implementation" or "in some implementations" used herein do not necessarily refer to the same implementation, and the phrases "in another implementation" or "in other implementations" used herein do not necessarily refer to different implementations. For example, the claimed subject matter includes all or part of a combination of exemplary embodiments or implementations.

[0033] In general, terms can be understood at least in part from their use in context. For example, terms used herein, such as "and", "or", "and / or", can include multiple meanings, which can depend at least in part on the context in which the terms are used. Typically, "or", if used in an associative list, such as A, B, or C, means A, B, and C, which are used here for inclusion, and A, B, or C, which are used here only for exclusion. In addition, the terms "one or more" or "at least one" used herein, depending at least in part on the context, can be used to describe any feature, structure, or characteristic in a singular sense, or can be used to describe a combination of features, structures, and characteristics in a plural sense. Similarly, terms such as "one", "an", or "said", depending at least in part on the context, can also be understood to convey singular or plural usage. In addition, also at least in part on the context, the term "based on" or "determined by..." can be understood to not necessarily be intended to represent a set of exclusive factors, but rather to allow for the presence of other factors that are not necessarily explicitly described.

[0034] According to one aspect of the present application, a mechanical oscillator reading device based on semiconductor thin film materials and a quantum device contained therein are provided. Figure 1 is a front view of a mechanical vibrator reading device based on semiconductor thin film material according to an embodiment of the present application, Figure 2 1 is a front view of a mechanical vibrator reading device based on semiconductor thin film material according to an embodiment of the present application. Figure 1 and Figure 2As shown, the mechanical vibrator reading device includes a bracket 1, a substrate silicon wafer 2, a semiconductor film 3, a first electrode 4, a first transmission line 5, an antenna 6, a second transmission line 7, a second electrode 8, a stacked piezoelectric brake device 9 and a magnetic device 10.

[0035] According to some embodiments, the material of the support 1 is a non-conductive material, such as polytetrafluoroethylene. The substrate silicon wafer 2 has a thickness of 500um and is placed on the upper surface of the support 1. For example, it can be connected to the support 1 through materials such as epoxy resin. The semiconductor film 3 can be a high tensile stress film, made of silicon nitride or silicon carbide, with a thickness of 0.1~1.2um, and the in-plane tensile stress can reach more than 2GPa. The semiconductor film 3 is grown on the surface of the substrate silicon wafer 2 by, for example, a low pressure chemical vapor deposition process (LPCVD). The first electrode 4, the first transmission line 5, the antenna 6, the second transmission line 7 and the second electrode 8 are grown on the surface of the semiconductor film 3 by micro-nano processing sputtering or evaporation technology to form a conductive structure. The material includes any one or more metal materials such as aluminum, niobium, titanium, etc., with a thickness of 50~200nm. The stacked piezoelectric brake device 9 is composed of a stack of piezoelectric materials 11. The lower surface of the piezoelectric brake device 9 is connected to the upper surface of the support 1, for example, by materials such as epoxy resin. The magnetic device 10 is made of magnetic material. According to a specific embodiment, the magnetic device 10 is a yttrium iron garnet ball with a diameter of 0.1-0.5 mm, which is placed on the upper surface of the laminated piezoelectric brake device 9. The magnetic device 10 corresponds to the antenna 6 in position, wherein the semiconductor film 3 is coupled to the magnetic device 10 through the antenna 6 to form a magnon-phonon coupling. The conductive structure is connected to the antenna 6 and is used to detect the mechanical oscillator signal generated by the suspended part at room temperature.

[0036] like Figure 1 and Figure 2 The mechanical oscillator reading device based on semiconductor thin film material shown includes a mechanical oscillator quantum device based on semiconductor thin film material, which includes a substrate silicon wafer 2, a semiconductor thin film 3, an antenna 6 and a conductive structure (a first electrode 4, a first transmission line 5, an antenna 6, a second transmission line 7 and a second electrode 8). Figure 1 and Figure 2 As shown, the semiconductor film 3 is located on the first surface of the substrate silicon wafer 2, wherein the semiconductor film 3 includes an attached portion located on the first surface of the substrate silicon wafer 2 and a suspended portion formed by etching the second surface of the substrate silicon wafer 2 until the semiconductor film is formed. The antenna 6 is a non-enclosed structure, which is arranged at the center of the surface of the suspended portion. The semiconductor film 3 is coupled to the magnetic device 10 through the antenna 6 to form a magnon-phonon coupling.

[0037] Figure 3is a top view of a mechanical vibrator reading device based on a semiconductor thin film material according to an embodiment of the present application. The conductive structure is located on the semiconductor thin film 3 and is connected to the antenna 6 for detecting the mechanical vibrator signal generated by the suspended part at room temperature. According to a specific embodiment, Figure 3 As shown, the antenna 6 of the non-enclosed structure includes a first end and a second end, and the conductive structure includes a first electrode 4, a first transmission line 5, an antenna 6, a second transmission line 7 and a second electrode 8, wherein the first electrode 4 is located at one end on the semiconductor film 3; the first transmission line 5 is located on the semiconductor film 3, and is connected to the first electrode 4 and the first end of the antenna 6; the second transmission line 7 is located on the semiconductor film 3, and is connected to the second end of the antenna 6; the second electrode 8 is located on the other end of the semiconductor film 3 opposite to the first electrode 4, and is connected to the second transmission line 7.

[0038] On the basis of the above embodiments, according to another aspect of the present application, a method for preparing a mechanical oscillator quantum device based on semiconductor thin film materials is provided. Figure 4 FIG. 1 is a schematic diagram of the preparation process of a mechanical oscillator quantum device based on semiconductor thin film materials according to an embodiment of the present application. Figure 4As shown, first, a silicon wafer is selected as the substrate silicon wafer 2, and its thickness can be 500um; then, a semiconductor film 3 is deposited on the upper surface of the substrate silicon wafer 2 through a low-pressure chemical vapor deposition process (LPCVD), and the film material can be selected as silicon nitride or silicon carbide, etc., and the thickness can be 0.1~1.2um; then, a photoresist is spin-coated on the lower surface of the substrate silicon wafer 2, and a prototype pattern is directly written by laser, corresponding to the pattern of the suspended part of the semiconductor film 3, and the size can be a rectangle of 1mm*1mm; the remaining photoresist acts as a hard mask material, and the middle part of the substrate on the lower surface of the substrate silicon wafer 2 is removed by windowing through a wet etching process such as KOH solution or a dry etching process such as reactive ion etching to form a suspended semiconductor film 3. The suspended semiconductor film is called the suspended part of the semiconductor film 3, and accordingly, it can be a rectangle with a size of 1mm*1mm. In this way, the semiconductor film 3 includes an attached part and a suspended part on the surface of the substrate silicon wafer 2. Afterwards, photoresist is spin-coated on the upper surface of the semiconductor film 3, and the prototype patterns of the antenna 6 and the conductive structure (including the first electrode 4, the first transmission line 5, the second transmission line 7 and the second electrode 8) are engraved by laser direct writing, that is, the antenna and the conductive structure pattern are formed; the remaining photoresist acts as a hard mask material, and a metal layer is grown in the area of ​​the antenna and conductive structure pattern and the stripping area of ​​the semiconductor film 3 by micro-nano processing sputtering or evaporation technology, wherein the stripping area is an area on the semiconductor film 3 that is different from the antenna and the conductive structure pattern; finally, the metal layer in the stripping area of ​​the semiconductor film 3 is removed by the stripping technology to obtain the antenna and the conductive structure (including the first electrode 4, the first transmission line 5, the second transmission line 7 and the second electrode 8) on the surface of the semiconductor film 3, wherein the thickness of the metal layer can be 50~200nm.

[0039] According to some embodiments, the antenna 6 may be formed at the center of the suspended portion of the semiconductor film 3 or at other locations on the suspended portion. The conductive structure may be formed as follows: Figure 4 The wiring or structure shown may also adopt other wiring or structures, and this application does not impose any limitation on this.

[0040] exist Figure 4 Based on the embodiments shown, the present application provides a method for preparing a mechanical oscillator quantum device based on semiconductor thin film materials, such as Figure 5 As shown, the method comprises the following steps:

[0041] Step S501, forming a semiconductor thin film on a first surface of a substrate silicon wafer by a low pressure chemical vapor deposition process;

[0042] Step S502, spin-coating photoresist on the second surface of the substrate silicon wafer, forming a pattern of the suspended portion of the semiconductor thin film on the second surface of the substrate silicon wafer by photolithography technology, and etching the substrate silicon wafer corresponding to the pattern of the suspended portion of the semiconductor thin film on the second surface of the substrate silicon wafer until the semiconductor thin film by etching technology to form the suspended portion of the semiconductor thin film;

[0043] Step S503, spin coating photoresist on the surface of the semiconductor film, and forming antenna and conductive structure patterns on the surface of the semiconductor film by photolithography technology;

[0044] Step S504, growing a metal layer in the region of the antenna and the conductive structure pattern and the stripping region of the semiconductor film by micro-nano processing sputtering or evaporation technology, wherein the stripping region is a region on the semiconductor film different from the antenna and the conductive structure pattern; and

[0045] Step S505, removing the metal layer in the stripping area of ​​the semiconductor film by a stripping technique to obtain the antenna and the conductive structure on the surface of the semiconductor film.

[0046] Those skilled in the art will appreciate that the dimensions, materials, and manufacturing processes or methods of the bracket 1, substrate silicon wafer 2, semiconductor film 3, first electrode 4, first transmission line 5, antenna 6, second transmission line 7, second electrode 8, stacked piezoelectric brake device 9, and magnetic device 10 may be selected and determined according to actual needs, and are not limited to the specific implementation methods given in the above embodiments.

[0047] Based on the above-mentioned mechanical vibrator reading device structure, the working principle of this application is as follows:

[0048] The stacked piezoelectric brake device 9 is composed of stacked piezoelectric materials 11 such as piezoelectric ceramics. When a suitable voltage is applied to both ends of the stacked piezoelectric brake device 9, the height of the stacked piezoelectric brake device 9 will change with the applied voltage. The magnetic device 10 is placed on the upper surface of the stacked piezoelectric brake device 9. When the height of the stacked piezoelectric brake device 9 changes, the distance from the magnetic device 10 to the antenna 6 located on the upper surface of the semiconductor film 3 will change. The magnon-phonon coupling is related to the distance between the magnetic device 10 and the antenna 6. The smaller the distance, the greater the magnon-phonon coupling strength.

[0049] like Figure 1As shown, the distance between the magnetic device 10 located on the upper surface of the stacked piezoelectric brake device 9 and the antenna 6 can be modulated by the stacked piezoelectric brake device 9. The antenna 6 is a microwave resonant circuit. When the microwave signal is input into the device through the SMA (subminiature A connector) connector connected to the second electrode 8, the antenna 6 generates a magnetic field. Therefore, when the distance between the antenna 6 and the magnetic device 10 is close enough, the magnetic field of the antenna 6 can fully sense the magnetic field from the magnetic device 10. Since the antenna 6 is located on the upper surface of the semiconductor film 3, the semiconductor film 3 can be coupled with the magnetic device 10 through the antenna 6 to form a dissipative form of magnon-phonon coupling. When the semiconductor film 3 oscillates, the distance between the antenna 6 and the magnetic device 10 located on the upper surface of the semiconductor film 3 will change, resulting in a change in the magnetic field of the magnetic device 10 sensed by the antenna 6. The magnetic field of the antenna 6 changes with the change of the magnetic field of the magnetic device 10, and conversely, the change of the magnetic field of the antenna 6 will also modulate the distance between the antenna 6 and the magnetic device 10. Therefore, the semiconductor film 3 and the magnetic device 10 are coupled together through the modulation of the antenna 6, and finally form a dissipative magnon-phonon coupling.

[0050] Figure 1 The second electrode 8 and the first electrode 4 on the upper surface of the semiconductor film 3 are electrodes for reading acoustic vibration signals. The semiconductor film 3 is driven by microwaves to generate a vibration mode, and the antenna 6 located on the upper surface of the semiconductor film 3 will vibrate along with the semiconductor film 3. The magnetic field generated by the magnetic device 10 is coupled with the magnetic field generated by the antenna 6, thereby generating a resonant absorption valley or a resonant transmission peak. Depending on the distance between the antenna 6 and the magnetic device 10, the line width of the absorption peak or the transmission valley will change, so that the signal of the mechanical oscillator can be read at room temperature through the magneton-phonon coupling.

[0051] According to the mechanical oscillator quantum device based on semiconductor thin film materials and its preparation method and reading device provided by this application, the reading device has a simple structure, few processing steps, and is easy to integrate with other semiconductor quantum devices; the reading device can read the signal of the mechanical oscillator at room temperature based on the magnon-phonon coupling. Based on the magnon-phonon coupling, the reading of semiconductor thin film signals does not need to be carried out in an extremely low temperature environment, and the testing of phonon thin film devices can be carried out under room temperature conditions, which greatly saves experimental costs and has significant advantages in realizing new, ultrafast, highly integrated, energy-saving spin electronics and magnetic storage devices. At the same time, through the stacked piezoelectric brake device, the magnon-phonon coupling strength can also be adjusted, and it is expected to reach the strong coupling range at room temperature, which promotes the development of strong coupling physics.

[0052] References to features, advantages, or similar language in this specification do not mean that all features and advantages that can be achieved by the present solution should be included or included in any single implementation thereof. Instead, language referring to features and advantages is understood to mean that a particular feature, advantage, or characteristic described in conjunction with an embodiment is included in at least one embodiment of the present solution. Therefore, discussions of features, advantages, and similar language throughout the specification may, but do not necessarily, refer to the same embodiment.

[0053] In addition, the features, advantages and characteristics of the present solution can be combined in any suitable manner in one or more embodiments. Based on the description herein, a person of ordinary skill in the relevant art will recognize that the present solution can be implemented without one or more specific features or advantages of a particular embodiment. In other cases, additional features and advantages can be realized in a particular embodiment that is not presented in all embodiments of the present solution.

[0054] The embodiments of the present application are described in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and its core idea of ​​the present application. At the same time, changes or deformations made by those skilled in the art based on the ideas of the present application, the specific implementation methods and the scope of application of the present application, all belong to the scope of protection of the present application. In summary, the content of this specification should not be construed as a limitation on the present application.

Claims

1. A mechanical oscillator reading device based on semiconductor thin film material, characterized in that: include: Bracket; A substrate silicon wafer is arranged on the surface of the support; A semiconductor film is located on the first surface of the substrate silicon wafer, wherein the semiconductor film includes an attached portion and a suspended portion, the attached portion is located on the first surface of the substrate silicon wafer, and the suspended portion is formed by etching the second surface of the substrate silicon wafer until the semiconductor film; The antenna is a non-enclosed structure and is arranged at the center of the surface of the suspended part; A stacked piezoelectric brake device, which is formed by stacking piezoelectric materials and connected to the bracket; a magnetic device, disposed on the stacked piezoelectric brake device, corresponding in position to the antenna, wherein the semiconductor film is coupled to the magnetic device through the antenna to form a magnon-phonon coupling; and The conductive structure is located on the semiconductor film and connected to the antenna, and is used to detect the mechanical oscillator signal generated by the suspended part at room temperature.

2. The reading device according to claim 1, characterized in that When voltage is applied to both ends of the stacked piezoelectric brake device, the distance between the antenna and the magnetic device can be adjusted, thereby adjusting the magnon-phonon coupling strength.

3. The reading device according to claim 1 or 2, characterized in that The magnetic device is a yttrium iron garnet ball with a diameter of 0.1-0.5 mm.

4. The reading device according to claim 1 or 2, characterized in that The semiconductor film is a high tensile stress film, made of silicon nitride or silicon carbide, with a thickness of 0.1-1.2 um.

5. The reading device according to claim 1 or 2, characterized in that: The substrate silicon wafer and the stacked piezoelectric brake device are respectively connected to the bracket through epoxy resin.

6. A mechanical oscillator quantum device based on semiconductor thin film material, characterized in that: include: Substrate silicon wafer; A semiconductor film is located on the first surface of the substrate silicon wafer, wherein the semiconductor film includes an attached portion and a suspended portion, the attached portion is located on the first surface of the substrate silicon wafer, and the suspended portion is formed by etching the second surface of the substrate silicon wafer until the semiconductor film; The antenna is a non-enclosed structure and is disposed at the center of the surface of the suspended portion, wherein the semiconductor film is coupled to the magnetic device through the antenna to form a magnon-phonon coupling; and The conductive structure is located on the semiconductor film and connected to the antenna, and is used to detect the mechanical oscillator signal generated by the suspended part at room temperature.

7. The quantum device according to claim 6, characterized in that The antenna comprises a first end and a second end, and the conductive structure comprises: A first electrode, located at one end of the semiconductor film; a first transmission line, located on the semiconductor film and connected to the first electrode and the first end of the antenna; a second transmission line, located on the semiconductor film and connected to the second end of the antenna; and The second electrode is located on the semiconductor film and at the other end opposite to the first electrode, and is connected to the second transmission line.

8. The quantum device according to claim 7, characterized in that The material of the antenna, the first electrode, the second electrode, the first transmission line and the second transmission line includes any one or more of aluminum, niobium and titanium, and the thickness is 50-200 nm.

9. A method for preparing a mechanical oscillator quantum device based on semiconductor thin film materials, characterized in that: include: Generating a semiconductor thin film on a first surface of a substrate silicon wafer by a low pressure chemical vapor deposition process; Spin-coating photoresist on the second surface of the substrate silicon wafer, forming a pattern of the suspended portion of the semiconductor thin film on the second surface of the substrate silicon wafer by photolithography technology, and etching the substrate silicon wafer corresponding to the pattern of the suspended portion of the semiconductor thin film on the second surface of the substrate silicon wafer until the semiconductor thin film by etching technology to form the suspended portion of the semiconductor thin film; Spin-coating photoresist on the surface of the semiconductor film, and forming antenna and conductive structure patterns on the surface of the semiconductor film by photolithography technology; Growing a metal layer in the region of the antenna and the conductive structure pattern and the stripping region of the semiconductor film by micro-nano processing sputtering or evaporation technology, wherein the stripping region is a region on the semiconductor film different from the antenna and the conductive structure pattern; as well as The metal layer in the stripping area of ​​the semiconductor film is removed by a stripping technique to obtain the antenna and the conductive structure on the surface of the semiconductor film.

10. The method according to claim 9, characterized in that The thickness of the metal layer is 50-200 nm, and the material includes any one or more of aluminum, niobium, and titanium.

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