Anti-reflection high-transmittance film and preparation method thereof

Abstract

The preparation method is characterized by comprising the following steps: (1) selecting common glass as a substrate, sequentially carrying out ultrasonic cleaning with acetone, alcohol and deionized water, and blow-drying; (2) placing the glass on a sample holder, bombarding the target material with Ar ions, and controlling the vacuum degree to be 2.0 * 10 <-1 > Pa; and (3) a titanium dioxide and silicon dioxide doped layer is plated on the glass by adopting a magnetron sputtering method, the titanium dioxide is a direct-current power supply with the sputtering power of 215W, the silicon dioxide is a radio-frequency power supply with the sputtering power of 75W-150W, and sputtering is carried out at the same time. Metal Ti is adopted as a target material when TiO2 is plated, a Si target is adopted when SiO2 is plated, the Ti target of a direct-current power supply and the Si target of a radio-frequency power supply are plated at the same time, and 30 sccm of argon and 3 sccm of oxygen are introduced; and (4) a silicon dioxide layer is continuously plated by adopting a magnetron sputtering method, a Si target is adopted, the power of a radio frequency power supply is 100 W, and 30 sccm of argon and 3 sccm of oxygen are introduced. The preparation method has the advantages that the transmittance of the prepared anti-reflection high-transmittance thin film at 500 nm reaches up to 99.5%, and the transmittance of the prepared anti-reflection high-transmittance thin film at 500-600 nm is averagely 97.4% or above.

Description

Technical Field

[0001] The invention belongs to the technical field of glass surface coating, and relates to an anti-reflection and high-transmittance film and a preparation method thereof. Background Art

[0002] Currently, most of the anti-reflection and high-transmittance films on the market are prepared by chemical vapor deposition, magnetron sputtering, etc. Although the transmittance of the film prepared by chemical vapor deposition is high, the deposition rate is low and the wear resistance is poor; and the film prepared by magnetron sputtering needs to achieve the anti-reflection and high-transmittance effect, and the preparation number of layers is large and the operation is cumbersome. Summary of the invention

[0003] The purpose of the present invention is to solve the problems that the deposition rate of anti-reflection and high-transmittance films prepared by chemical vapor deposition is low and the wear resistance is poor; while the anti-reflection and high-transmittance films prepared by magnetron sputtering have many layers and complicated operation, and to provide an anti-reflection and high-transmittance film and a preparation method thereof.

[0004] In order to achieve the above object, the technical solution adopted by the present invention is as follows: A high-transmittance anti-reflection film comprises a glass substrate, and is characterized in that a doping layer of titanium dioxide and silicon dioxide and a silicon dioxide layer are arranged in sequence from bottom to top on the glass substrate.

[0005] Furthermore, the refractive index of the doped layer of titanium dioxide and silicon dioxide is 1.57-1.77, and the thickness is 138 nm.

[0006] Furthermore, the refractive index of the doped layer of titanium dioxide and silicon dioxide is 1.66.

[0007] Furthermore, the silicon dioxide layer has a refractive index of 1.46 and a thickness of 102 nm.

[0008] A method for preparing an anti-reflection and high-transmittance film, characterized by comprising the following steps: (1) Ordinary glass is used as the substrate, and the glass is ultrasonically cleaned with acetone, alcohol, and deionized water in sequence to remove surface stains, and then blown dry for later use; (2) Place the dried glass on the sample holder and bombard the target with Ar ions to remove surface impurities and oxides. The vacuum degree is controlled at 2.0×10 -1 Pa; (3) The doped layers of titanium dioxide and silicon dioxide are plated on the glass after impurities are removed by magnetron sputtering. The sputtering power of titanium dioxide is 215W for DC power supply, and the sputtering power of silicon dioxide is 75W-150W for RF power supply. The sputtering is performed simultaneously. When TiO2 is plated, metal Ti is used as the target material. When SiO2 is plated, Si target is used. The DC power supply Ti target and the RF power supply Si target are plated simultaneously. 30sccm of argon and 3sccm of oxygen are introduced. After the preparation is completed, the doped layers of titanium dioxide and silicon dioxide with a refractive index of 1.57-1.77 are obtained; (4) A silicon dioxide layer was further deposited on the titanium dioxide and silicon dioxide doped layers by magnetron sputtering. A Si target was used, the RF power was 100 W, 30 sccm of argon and 3 sccm of oxygen were introduced, and a silicon dioxide layer with a refractive index of 1.46 was obtained after the preparation was completed.

[0009] Compared with the prior art, the present invention has the following advantages: 1. The present invention adopts magnetron sputtering to prepare two thin films of titanium dioxide and silicon dioxide doping layer and silicon dioxide layer. Compared with other high-transmittance thin films prepared by chemical vapor deposition and magnetron sputtering, the present invention has simple structure, stable process, fast preparation speed, good film quality and low cost; 2. The present invention achieves the purpose of anti-reflection by superimposing a doped layer of titanium dioxide and silicon dioxide with a specific refractive index in conjunction with a silicon dioxide layer with a specific refractive index. The anti-reflection and high-transmittance film prepared by the present invention has a transmittance of up to 99.5% at 500nm, and an average transmittance of more than 97.4% at 500nm-600nm. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 The transmittance spectrum of the anti-reflection and high-transmittance film described in Example 1; Figure 2 The transmittance spectrum of the anti-reflection and high-transmittance film described in Example 2; Figure 3 This is a transmittance spectrum of an anti-reflection and high-transmittance film described in Example 3. DETAILED DESCRIPTION

[0011] A method for preparing an anti-reflection and high-transmittance film, the specific implementation steps are as follows: Example

[0012] (1) Use 1.1mm ordinary glass as the substrate material and perform strict ultrasonic cleaning on the glass: use acetone, alcohol, and deionized water to perform ultrasonic cleaning in sequence to remove surface stains, and then blow dry for later use; (2) Place the dried glass into the magnetron sputtering equipment and evacuate the magnetron sputtering equipment. When the vacuum degree of the sputtering chamber reaches 1.0×10 -4Pa, argon gas was introduced at 30 sccm, and the vacuum degree was adjusted to 2.0×10 -1 Pa, pre-sputtering of Ti target and Si target respectively; (3) After the pre-sputtering is completed, the first doped layer of titanium dioxide and silicon dioxide (refractive index of 1.66) is prepared. During the coating, the Ti target is sputtered by a DC power supply, and the process is: power supply power of 215W, Ar is 30sccm, O2 is 3sccm, and the sputtering time is 41min45s; the Si target is sputtered by a screen power supply, and the process is: power supply power of 100W, Ar is 30sccm, O2 is 3sccm, and the sputtering time is 41min45s; the two materials are sputtered simultaneously, and the working gas pressure is maintained at 2.0×10-1Pa, and a doped layer of titanium dioxide and silicon dioxide with a film thickness of 138nm is obtained; (4) Then, a second silicon dioxide layer (refractive index of 1.46) was prepared. The Si target was sputtered using a screen power supply. The process was as follows: power of 100 W, Ar of 30 sccm, O2 of 3 sccm, sputtering time of 40 min, and working gas pressure of 2.0 × 10-1 Pa. A silicon dioxide layer with a thickness of 102 nm was obtained. After the plating was completed, an anti-reflective and high-transmittance film was obtained. The average transmittance of the anti-reflective and high-transmittance film in the visible light region was 97.4%, and the transmittance at 500 nm was 99.5%. Example

[0013] (1) Use 1.1mm ordinary glass as the substrate material and perform strict ultrasonic cleaning on the glass: use acetone, alcohol, and deionized water to perform ultrasonic cleaning in sequence to remove surface stains, and then blow dry for later use; (2) Place the dried glass into the magnetron sputtering equipment and evacuate the magnetron sputtering equipment. When the vacuum degree of the sputtering chamber reaches 1.0×10 -4 Pa, argon gas was introduced at 30 sccm, and the vacuum degree was adjusted to 2.0×10 -1 Pa, pre-sputtering of Ti target and Si target respectively; (3) After the pre-sputtering is completed, the first doped layer of titanium dioxide and silicon dioxide (refractive index 1.57) is prepared. During the coating, the Ti target is sputtered by a DC power supply, and the process is as follows: the power is 215W, Ar is 30sccm, O2 is 3sccm, and the sputtering time is 26min30s; the Si target is sputtered by a screen power supply, and the process is as follows: the power is 150W, Ar is 30sccm, O2 is 3sccm, and the sputtering time is 26min30s; the two materials are sputtered simultaneously, and the working gas pressure is maintained at 2.0×10 -1 Pa, a doped layer of titanium dioxide and silicon dioxide with a film thickness of 138 nm is obtained; (4) Then, the second silicon dioxide layer (refractive index 1.46) was prepared. The Si target was sputtered using a screen power supply. The process was as follows: power supply 100 W, Ar 30 sccm, O2 3 sccm, sputtering time 40 min, and working gas pressure maintained at 2.0×10 -1 Pa, a silicon dioxide layer with a film thickness of 102nm is obtained; after the plating is completed, a thin film is obtained, and the average transmittance of the thin film in the visible light region is 95%, and the transmittance at 550nm is 97.9%. Example

[0014] (1) Use 1.1mm ordinary glass as the substrate material and perform strict ultrasonic cleaning on the glass: use acetone, alcohol, and deionized water to perform ultrasonic cleaning in sequence to remove surface stains, and then blow dry for later use; (2) Place the dried glass into the magnetron sputtering equipment and evacuate the magnetron sputtering equipment. When the vacuum degree of the sputtering chamber reaches 1.0×10 -4 Pa, argon gas was introduced at 30 sccm, and the vacuum degree was adjusted to 2.0×10 -1 Pa, pre-sputtering of Ti target and Si target respectively; (3) After the pre-sputtering is completed, the first doped layer of titanium dioxide and silicon dioxide (refractive index 1.77) is prepared. During the coating, the Ti target is sputtered by a DC power supply, and the process is as follows: the power is 215W, Ar is 30sccm, O2 is 3sccm, and the sputtering time is 53min40s; the Si target is sputtered by a screen power supply, and the process is as follows: the power is 75W, Ar is 30sccm, O2 is 3sccm, and the sputtering time is 53min40s; the two materials are sputtered simultaneously, and the working gas pressure is maintained at 2.0×10 -1 Pa, a doped layer of titanium dioxide and silicon dioxide with a film thickness of 138 nm is obtained; (4) Then, the second silicon dioxide layer (refractive index 1.46) was prepared. The Si target was sputtered using a screen power supply. The process was as follows: power supply 100 W, Ar 30 sccm, O2 3 sccm, sputtering time 40 min, and working gas pressure maintained at 2.0×10 -1 Pa, a silicon dioxide layer with a film thickness of 102nm was obtained; after the plating was completed, a thin film was obtained, and the average transmittance of the thin film in the visible light region was 89%, and the transmittance at 550nm was 97.6%.

Claims

1. An anti-reflection and high-transmittance film, comprising a glass substrate, characterized in that A doping layer of titanium dioxide and silicon dioxide and a silicon dioxide layer are arranged on the glass substrate from bottom to top.

2. The anti-reflection and high-transmittance film according to claim 1, characterized in that: The doped layer of titanium dioxide and silicon dioxide has a refractive index of 1.57-1.77 and a thickness of 138 nm.

3. The anti-reflection and high-transmittance film according to claim 2, characterized in that: The refractive index of the doped layer of titanium dioxide and silicon dioxide is 1.

66.

4. The anti-reflection and high-transmittance film according to any one of claims 1 to 3, characterized in that: The silicon dioxide layer has a refractive index of 1.46 and a thickness of 102 nm.

5. A method for preparing an anti-reflection and high-transmittance film, characterized in that The steps include: (1) Ordinary glass is used as the substrate, and the glass is ultrasonically cleaned with acetone, alcohol, and deionized water in sequence to remove surface stains, and then blown dry for later use; (2) Place the dried glass on the sample holder and bombard the target with Ar ions to remove surface impurities and oxides. The vacuum degree is controlled at 2.0×10 -1 Pa; (3) The doped layers of titanium dioxide and silicon dioxide are plated on the glass after impurities are removed by magnetron sputtering. The sputtering power of titanium dioxide is 215W for DC power supply, and the sputtering power of silicon dioxide is 75W-150W for RF power supply. The sputtering is performed simultaneously. When TiO2 is plated, metal Ti is used as the target material. When SiO2 is plated, Si target is used. The DC power supply Ti target and the RF power supply Si target are plated simultaneously. 30sccm of argon and 3sccm of oxygen are introduced. After the preparation is completed, the doped layers of titanium dioxide and silicon dioxide with a refractive index of 1.57-1.77 are obtained; (4) A silicon dioxide layer was further deposited on the titanium dioxide and silicon dioxide doped layers by magnetron sputtering. A Si target was used, the RF power was 100 W, 30 sccm of argon and 3 sccm of oxygen were introduced, and a silicon dioxide layer with a refractive index of 1.46 was obtained after the preparation was completed.

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