A method and system for uniform temperature control of insulated gate bipolar transistor

Abstract

The present invention relates to the field of insulated gate bipolar transistors, and discloses a method and system for uniform temperature control of an insulated gate bipolar transistor, including: performing a junction temperature test according to a multidimensional coordinate system of an initial junction temperature factor, obtaining an initial junction temperature test multidimensional coordinate system, calculating a current junction temperature prediction difference between a current actual junction temperature and the current predicted junction temperature, determining whether the current junction temperature prediction difference is a new clustering object, if so, updating the initial scanning radius, and calculating the number of newly added clustering clusters, calculating the current sampling frequency according to the number of newly added clustering clusters and performing junction temperature sampling, updating the initial junction temperature test multidimensional coordinate system using the sampled junction temperature set, and if not, uniform temperature control of the current insulated gate bipolar transistor according to the current predicted junction temperature. The main purpose of the present invention is to improve the junction temperature prediction accuracy of the insulated gate bipolar transistor.

Description

Technical Field

[0001] The invention relates to a temperature uniformity control method and system for an insulated gate bipolar transistor, belonging to the technical field of insulated gate bipolar transistors. Background Art

[0002] Insulated Gate Bipolar Transistor (IGBT) is a key component in power electronic equipment. Due to the difference in electrothermal parameters of IGBTs, each IGBT in parallel is subject to different thermal stresses, which will accelerate the aging of the IGBT. Therefore, it is very important to consistently regulate the junction temperature of each IGBT in the circuit so that each IGBT reaches a uniform temperature state.

[0003] When the main way to regulate the junction temperature of the insulated gate bipolar transistor is to regulate the current flowing through each insulated gate bipolar transistor to achieve the regulation of its load power, and finally achieve the regulation of its junction temperature, before regulating the current, it is necessary to obtain the real-time junction temperature of the insulated gate bipolar transistor so as to achieve quantitative control of the current according to the real-time junction temperature. Since it is relatively complicated and costly to directly measure the junction temperature of the insulated gate bipolar transistor, it is usually necessary to establish a calibration relationship between the factors affecting the junction temperature and the junction temperature, and then predict the junction temperature based on the calibration relationship and the actual measured values ​​of the factors affecting the junction temperature.

[0004] As the working time of the IGBT increases, the internal performance parameters of the IGBT will also change, and the accuracy of the calibration relationship between the current junction temperature influencing factors and the junction temperature will also decrease, resulting in a decrease in the prediction accuracy of the junction temperature of the IGBT. Summary of the invention

[0005] The present invention provides a method and system for uniform temperature control of an insulated gate bipolar transistor and a computer-readable storage medium, the main purpose of which is to improve the junction temperature prediction accuracy of the insulated gate bipolar transistor.

[0006] To achieve the above object, the present invention provides a method for controlling the temperature of an insulated gate bipolar transistor, comprising:

[0007] Obtain a target factor value sequence set, construct an initial junction temperature factor multidimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence, and the target factor value sequence set, perform a junction temperature test according to the initial junction temperature factor multidimensional coordinate system, and obtain an initial junction temperature test multidimensional coordinate system;

[0008] Predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle, obtaining the current predicted junction temperature, acquiring the current actual junction temperature, and calculating the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature;

[0009] Determining whether the current junction temperature prediction difference is a preset new clustering object according to a pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm, wherein the DBSCAN clustering algorithm includes: an initial scanning radius and an initial minimum number of included points;

[0010] If the current junction temperature prediction difference is a new clustering object, the initial scanning radius is updated, and the number of newly added clusters is calculated using the historical junction temperature prediction difference set and the current junction temperature prediction difference according to the initial scanning radius and the initial minimum number of included points;

[0011] Calculating the current sampling frequency according to the newly added number of clusters and the preset sampling frequency formula, sampling the junction temperature of the current insulated gate bipolar transistor according to the current sampling frequency and the inspection period to obtain a sampled junction temperature set, updating the initial junction temperature test multidimensional coordinate system using the sampled junction temperature set, and returning to the above step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multidimensional coordinate system and the preset inspection period;

[0012] If the current predicted junction temperature difference is not a new clustering object, the current insulated gate bipolar transistor is temperature-controlled according to the current predicted junction temperature.

[0013] Optionally, the acquiring of the target factor value sequence set and the building of the initial junction temperature factor multi-dimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence and the target factor value sequence set include:

[0014] Obtaining a junction temperature influencing factor set of an insulated gate bipolar transistor, and identifying a secondary influencing factor set in the junction temperature influencing factor set, wherein the junction temperature influencing factor set includes a secondary influencing factor set, a conduction voltage drop, and a collector current, and the secondary influencing factor set includes: operating frequency, duty cycle, ambient temperature, switching loss, and gate drive loss;

[0015] Constructing a two-dimensional coordinate system of junction temperature factor according to the on-state voltage drop sequence and the collector current sequence, wherein the horizontal axis of the two-dimensional coordinate system of junction temperature factor represents the on-state voltage drop, and the vertical axis represents the collector current;

[0016] Performing a junction temperature test according to the junction temperature factor two-dimensional coordinate system and a preset standard secondary factor value set to obtain a junction temperature test two-dimensional coordinate system;

[0017] Extracting secondary influencing factors in the secondary influencing factor set in sequence, identifying a factor value sequence corresponding to the secondary influencing factors, performing a junction temperature test according to the factor value sequence and the junction temperature factor two-dimensional coordinate system, and obtaining a junction temperature test three-dimensional coordinate system;

[0018] sequentially identifying a junction temperature test value pair in the junction temperature test three-dimensional coordinate system and the junction temperature test two-dimensional coordinate system, wherein the junction temperature test value pair refers to a pair of junction temperature test values ​​having the same forward voltage drop and collector current but different values ​​of secondary influencing factors;

[0019] Calculating a junction temperature test difference of the junction temperature test value pair to obtain a junction temperature test difference set, and calculating a junction temperature test difference sum of the junction temperature test difference set to obtain a junction temperature test difference sum set;

[0020] Identify a target test difference value set from the junction temperature test difference value set according to a preset junction temperature difference threshold, and identify a target factor value sequence set corresponding to the target test difference value set;

[0021] An initial junction temperature factor multidimensional coordinate system is constructed according to the target factor value sequence set, the on-state voltage drop sequence and the collector current sequence, wherein the initial junction temperature factor multidimensional coordinate system includes: an axial junction temperature coordinate axis and a radial factor coordinate axis set, wherein the radial factor coordinate axis set is coplanar and perpendicular to the axial junction temperature coordinate axis.

[0022] Optionally, performing a junction temperature test according to the initial junction temperature factor multidimensional coordinate system to obtain an initial junction temperature test multidimensional coordinate system includes:

[0023] Arrange and combine the on-state voltage drop sequence, the collector current sequence, and the target factor value sequence set to obtain multiple sets of junction temperature test combination value sets, and sequentially extract junction temperature test combination value sets from the multiple sets of junction temperature test combination value sets;

[0024] Identify a junction temperature test combination coordinate point set corresponding to the junction temperature test combination value set in a radial factor coordinate axis set in the initial junction temperature factor multidimensional coordinate system;

[0025] Connecting the junction temperature test combination coordinate point sets in sequence to obtain a junction temperature test combination polygon;

[0026] Performing a junction temperature test on the current insulated gate bipolar transistor according to the junction temperature test combination value set to obtain a test junction temperature;

[0027] Identifying a junction temperature axial position of the test junction temperature in the axial junction temperature coordinate axis, translating the junction temperature test combination polygon to the junction temperature axial position, and obtaining a junction temperature test value assignment polygon;

[0028] The junction temperature test value polygons corresponding to all junction temperature test combination value sets are summarized to obtain the initial junction temperature test multi-dimensional coordinate system.

[0029] Optionally, the performing junction temperature prediction on the pre-built current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and a preset inspection cycle to obtain a current predicted junction temperature includes:

[0030] Obtaining a historical inspection duration, and when the historical inspection duration is equal to the inspection period, obtaining a current factor value set;

[0031] Identify a corresponding junction temperature prediction combined coordinate point set in the radial factor coordinate axis set according to the current factor value set;

[0032] Connecting the junction temperature prediction combined coordinate point sets in sequence to obtain a junction temperature prediction combined polygon;

[0033] According to the junction temperature prediction combined polygon, combined polygon matching is performed in the initial junction temperature test multidimensional coordinate system to obtain a junction temperature test similar polygon, wherein the junction temperature test similar polygon refers to a junction temperature test valued polygon that is most similar in shape to the junction temperature prediction combined polygon;

[0034] A similar test junction temperature corresponding to the junction temperature test similar polygon is identified, and the similar test junction temperature is used as the current predicted junction temperature.

[0035] Optionally, judging whether the current junction temperature prediction difference is a preset new clustering object according to the pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm includes:

[0036] Plotting points on a pre-constructed junction temperature prediction difference axis according to the historical junction temperature prediction difference value set and the current junction temperature prediction difference value to obtain a junction temperature prediction difference value coordinate point set;

[0037] Extracting junction temperature prediction difference coordinate points in sequence from the junction temperature prediction difference coordinate point set, and identifying a directly density reachable point set of the junction temperature prediction difference coordinate points in the junction temperature prediction difference coordinate point set according to the initial scanning radius;

[0038] Eliminating the directly density reachable point set from the junction temperature prediction difference coordinate point set to obtain a junction temperature prediction difference iterative point set;

[0039] Determining whether the junction temperature prediction difference iteration point set is empty;

[0040] If the junction temperature prediction difference iteration point set is not empty, then using the junction temperature prediction difference iteration point set to update the junction temperature prediction difference coordinate point set, and returning to the above step of sequentially extracting junction temperature prediction difference coordinate points from the junction temperature prediction difference coordinate point set;

[0041] If the junction temperature prediction difference iteration point set is empty, determining whether the current junction temperature prediction difference is included in the direct density reachable point set;

[0042] If the current junction temperature prediction difference is included in the direct density reachable point set, the current junction temperature prediction difference is not a new clustering object;

[0043] If the current junction temperature prediction difference is not included in the direct density reachable point set, determining whether the current junction temperature prediction difference is a preset maximum junction temperature prediction difference;

[0044] If the current junction temperature prediction difference is not the maximum junction temperature prediction difference, then the current junction temperature prediction difference is not a new clustering object;

[0045] If the current junction temperature prediction difference is the maximum junction temperature prediction difference, the current junction temperature prediction difference is a new clustering object.

[0046] Optionally, updating the initial scanning radius includes:

[0047] Identifying a maximum junction temperature prediction difference in the historical junction temperature prediction difference set, and calculating a current prediction difference distance between the maximum junction temperature prediction difference and the current junction temperature prediction difference, wherein the current prediction difference distance refers to a difference between the maximum junction temperature prediction difference and the current junction temperature prediction difference;

[0048] The pre-built radius update formula is used to calculate and update the scanning radius according to the current predicted difference distance, wherein the radius update formula is as follows:

[0049] ;

[0050] in, Indicates the update scanning radius, represents the exponential base, Indicates the current prediction difference distance, represents the regulation index;

[0051] The initial scanning radius is updated using the updated scanning radius.

[0052] Optionally, the calculating the number of newly added clusters according to the initial scanning radius and the initial minimum number of included points using a historical junction temperature prediction difference set and a current junction temperature prediction difference includes:

[0053] According to the initial scanning radius and the initial minimum number of included points, cluster analysis is performed on the junction temperature prediction difference coordinate point set using the DBSCAN clustering algorithm to obtain an updated number of cluster clusters;

[0054] Identify the number of reachable point sets of the directly density reachable point set in the junction temperature prediction difference coordinate point set;

[0055] The number of newly added clusters is calculated according to the updated number of clusters and the number of reachable point sets, wherein the number of newly added clusters refers to the absolute value of the difference between the updated number of clusters and the number of reachable point sets minus one.

[0056] Optionally, the sampling frequency formula is as follows:

[0057] ;

[0058] in, Indicates the current sampling frequency, represents the initial sampling frequency, represents a natural constant, Indicates the number of newly added clusters. Represents the frequency amplification index.

[0059] Optionally, the updating the initial junction temperature test multi-dimensional coordinate system by using the sampled junction temperature set includes:

[0060] Extracting sampled junction temperatures in the sampled junction temperature set in sequence, and identifying a junction temperature sampling combination value set of the sampled junction temperatures;

[0061] Draw a junction temperature sampling combination polygon according to the junction temperature sampling combination value set;

[0062] Identifying a junction temperature sampling similar polygon of the junction temperature sampling combination polygon in the initial junction temperature test multidimensional coordinate system, wherein the junction temperature sampling similar polygon refers to a junction temperature test value assignment polygon that is most similar in shape to the junction temperature sampling combination polygon;

[0063] updating the junction temperature sampling similarity polygon using the sampled junction temperature and the junction temperature sampling combination polygon;

[0064] Determining whether the sampled junction temperature has been extracted;

[0065] If the sampled junction temperatures have not been completely extracted, returning to the above step of sequentially extracting the sampled junction temperatures in the sampled junction temperature set;

[0066] If the sampled junction temperature extraction is completed, the initial junction temperature test multi-dimensional coordinate system is updated.

[0067] In order to solve the above problems, the present invention further provides a temperature control system for an insulated gate bipolar transistor, the system comprising:

[0068] An initial junction temperature test multidimensional coordinate system construction module is used to obtain a target factor value sequence set, construct an initial junction temperature factor multidimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence and the target factor value sequence set, perform a junction temperature test according to the initial junction temperature factor multidimensional coordinate system, and obtain an initial junction temperature test multidimensional coordinate system;

[0069] A current junction temperature prediction difference calculation module is used to predict the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle, obtain the current predicted junction temperature, obtain the current actual junction temperature, and calculate the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature;

[0070] An initial junction temperature test multidimensional coordinate system update module is used to determine whether the current junction temperature prediction difference is a preset new clustering object based on a pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm, wherein the DBSCAN clustering algorithm includes: an initial scanning radius and an initial minimum number of inclusion points; if the current junction temperature prediction difference is a new clustering object, the initial scanning radius is updated, and the number of newly added clustering clusters is calculated based on the initial scanning radius and the initial minimum number of inclusion points using the historical junction temperature prediction difference set and the current junction temperature prediction difference; the current sampling frequency is calculated based on the number of newly added clustering clusters and a preset sampling frequency formula, the junction temperature of the current insulated gate bipolar transistor is sampled based on the current sampling frequency and the inspection period, and a sampled junction temperature set is obtained, the initial junction temperature test multidimensional coordinate system is updated using the sampled junction temperature set, and the step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor based on the initial junction temperature test multidimensional coordinate system and the preset inspection period is returned to the above-mentioned step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor based on the initial junction temperature test multidimensional coordinate system and the preset inspection period;

[0071] The current insulated gate bipolar transistor average temperature control module is used to perform average temperature control on the current insulated gate bipolar transistor according to the current predicted junction temperature if the current junction temperature prediction difference is not a new clustering object.

[0072] In order to solve the above problem, the present invention further provides an electronic device, the electronic device comprising:

[0073] at least one processor; and,

[0074] a memory communicatively connected to the at least one processor; wherein,

[0075] The memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor to implement the above-mentioned method for uniform temperature control of the insulated gate bipolar transistor.

[0076] In order to solve the above problem, the present invention also provides a computer-readable storage medium, in which at least one instruction is stored. The at least one instruction is executed by a processor in an electronic device to implement the above-mentioned method for uniform temperature control of an insulated gate bipolar transistor.

[0077] Compared with the problem described in the background technology, the present invention first constructs an initial junction temperature test multidimensional coordinate system that can be used for junction temperature prediction. Specifically, it is necessary to first obtain a target factor value sequence set, and then construct an initial junction temperature factor multidimensional coordinate system based on a preset on-state voltage drop sequence, a collector current sequence and the target factor value sequence set. At this time, the junction temperature test can be performed according to the initial junction temperature factor multidimensional coordinate system, and then the junction temperature data of the junction temperature test is used to mark the junction temperature of each coordinate point in the initial junction temperature factor multidimensional coordinate system, so as to obtain the initial junction temperature test multidimensional coordinate system. After obtaining the initial junction temperature test multidimensional coordinate system, it is necessary to determine the prediction accuracy of the initial junction temperature test multidimensional coordinate system. Therefore, it is necessary to perform junction temperature prediction on the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multidimensional coordinate system and the inspection cycle to obtain the current predicted junction temperature, and then obtain the current actual junction temperature, and finally calculate the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature. In order to determine whether the initial junction temperature test multidimensional coordinate system needs to be updated, firstly, according to the historical junction temperature prediction difference set and the preset The DBSCAN clustering algorithm determines whether the current junction temperature prediction difference is a new clustering object. If the current junction temperature prediction difference is a new clustering object, it indicates that the current junction temperature prediction difference does not meet the error standard. Therefore, it is necessary to update the initial junction temperature test multidimensional coordinate system. When updating the initial junction temperature test multidimensional coordinate system, first update the initial scanning radius, and according to the initial scanning radius and the initial minimum number of included points, use the historical junction temperature prediction difference set and the current junction temperature prediction difference to calculate the number of newly added clustering clusters. The more newly added clustering clusters, the more the initial junction temperature test. The greater the degree to which the multidimensional coordinate system needs to be updated, the more it is necessary to calculate the current sampling frequency according to the newly added number of clusters and the preset sampling frequency formula before updating the initial junction temperature test multidimensional coordinate system, and then sample the junction temperature of the current insulated gate bipolar transistor according to the current sampling frequency and the inspection period to obtain a sampled junction temperature set, and finally use the sampled junction temperature set to update the initial junction temperature test multidimensional coordinate system until the current junction temperature prediction difference is not a new clustering object, and then perform temperature control on the current insulated gate bipolar transistor according to the current predicted junction temperature. Therefore, the temperature control method, system, electronic device and computer-readable storage medium for the insulated gate bipolar transistor proposed in the present invention mainly aim to improve the junction temperature prediction accuracy of the insulated gate bipolar transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0078] Figure 1A schematic flow chart of a method for uniform temperature control of an insulated gate bipolar transistor provided in one embodiment of the present invention;

[0079] Figure 2 A functional module diagram of a temperature control system for an insulated gate bipolar transistor provided by an embodiment of the present invention;

[0080] Figure 3 A schematic structural diagram of an electronic device for implementing the method for uniform temperature control of an insulated gate bipolar transistor provided in one embodiment of the present invention.

[0081] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings in conjunction with the embodiments. DETAILED DESCRIPTION

[0082] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0083] The embodiment of the present application provides a method for uniform temperature control of an insulated gate bipolar transistor. The execution subject of the method for uniform temperature control of an insulated gate bipolar transistor includes but is not limited to at least one of the electronic devices such as a server and a terminal that can be configured to execute the method provided by the embodiment of the present application. In other words, the method for uniform temperature control of an insulated gate bipolar transistor can be executed by software or hardware installed in a terminal device or a server device. The server includes but is not limited to: a single server, a server cluster, a cloud server or a cloud server cluster, etc.

[0084] Example 1: Reference Figure 1 FIG. 1 is a flow chart of a method for controlling the temperature of an insulated gate bipolar transistor according to an embodiment of the present invention. In this embodiment, the method for controlling the temperature of an insulated gate bipolar transistor includes:

[0085] S1. Obtain a target factor value sequence set, construct an initial junction temperature factor multidimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence and the target factor value sequence set, perform a junction temperature test according to the initial junction temperature factor multidimensional coordinate system, and obtain an initial junction temperature test multidimensional coordinate system.

[0086] It can be explained that the target factor value sequence set refers to a set of influencing factor value sequences of secondary influencing factors whose influence on the junction temperature of the insulated gate bipolar transistor is higher than the preset standard, see the following embodiments for details. The on-state voltage drop sequence refers to a sequence composed of optional on-state voltage drops, and the collector current sequence refers to a sequence composed of optional collector currents. The initial junction temperature factor multidimensional coordinate system refers to a multi-dimensional space coordinate system with the on-state voltage drop sequence, the collector current sequence and the target factor value sequence set as independent variable axes, and the junction temperature as the dependent variable axis, see the following embodiments for details. The initial junction temperature test multidimensional coordinate system refers to a multidimensional coordinate system after performing a junction temperature test on the current insulated gate bipolar transistor and recording data using the initial junction temperature factor multidimensional coordinate system.

[0087] In the embodiment of the present invention, the step of acquiring a target factor value sequence set and constructing a multi-dimensional coordinate system of an initial junction temperature factor according to a preset on-state voltage drop sequence, a collector current sequence and the target factor value sequence set includes:

[0088] Obtaining a junction temperature influencing factor set of an insulated gate bipolar transistor, and identifying a secondary influencing factor set in the junction temperature influencing factor set, wherein the junction temperature influencing factor set includes a secondary influencing factor set, a conduction voltage drop, and a collector current, and the secondary influencing factor set includes: operating frequency, duty cycle, ambient temperature, switching loss, and gate drive loss;

[0089] Constructing a two-dimensional coordinate system of junction temperature factor according to the on-state voltage drop sequence and the collector current sequence, wherein the horizontal axis of the two-dimensional coordinate system of junction temperature factor represents the on-state voltage drop, and the vertical axis represents the collector current;

[0090] Performing a junction temperature test according to the junction temperature factor two-dimensional coordinate system and a preset standard secondary factor value set to obtain a junction temperature test two-dimensional coordinate system;

[0091] Extracting secondary influencing factors in the secondary influencing factor set in sequence, identifying a factor value sequence corresponding to the secondary influencing factors, performing a junction temperature test according to the factor value sequence and the junction temperature factor two-dimensional coordinate system, and obtaining a junction temperature test three-dimensional coordinate system;

[0092] sequentially identifying a junction temperature test value pair in the junction temperature test three-dimensional coordinate system and the junction temperature test two-dimensional coordinate system, wherein the junction temperature test value pair refers to a pair of junction temperature test values ​​having the same forward voltage drop and collector current but different values ​​of secondary influencing factors;

[0093] Calculating a junction temperature test difference of the junction temperature test value pair to obtain a junction temperature test difference set, and calculating a junction temperature test difference sum of the junction temperature test difference set to obtain a junction temperature test difference sum set;

[0094] Identify a target test difference value set from the junction temperature test difference value set according to a preset junction temperature difference threshold, and identify a target factor value sequence set corresponding to the target test difference value set;

[0095] An initial junction temperature factor multidimensional coordinate system is constructed according to the target factor value sequence set, the on-state voltage drop sequence and the collector current sequence, wherein the initial junction temperature factor multidimensional coordinate system includes: an axial junction temperature coordinate axis and a radial factor coordinate axis set, wherein the radial factor coordinate axis set is coplanar and perpendicular to the axial junction temperature coordinate axis.

[0096] Furthermore, the junction temperature influencing factor set refers to a set of factors that affect the junction temperature of the insulated gate bipolar transistor, and the secondary influencing factor set refers to a set of secondary factors that affect the insulated gate bipolar transistor. In the embodiment of the present invention, the on-state voltage drop and the collector current are used as the main influencing factors of the junction temperature. The standard secondary factor value set refers to a standard value set of the secondary influencing factors, for example: the operating frequency is 20kHz, the duty cycle is 40%, and the ambient temperature is 25 Etc. The junction temperature test two-dimensional coordinate system refers to a two-dimensional coordinate system after performing a junction temperature test according to a junction temperature factor two-dimensional coordinate system and a preset standard secondary factor value set, and recording the junction temperature test data in the junction temperature factor two-dimensional coordinate system. The junction temperature test data refers to the junction temperature obtained during the junction temperature test. The method for measuring the junction temperature can first separate the current insulated gate bipolar transistor for measurement, or install a PN junction temperature sensor near the current insulated gate bipolar transistor and then measure it.

[0097] It can be understood that the factor value sequence refers to the selectable value sequence of the secondary influencing factors, for example: when the secondary influencing factor is the operating frequency, the factor value sequence can be 15 kHz, 17 kHz, 19 kHz, 21 kHz, 23kHz, 25 kHz, etc. The junction temperature test three-dimensional coordinate system refers to a spatial three-dimensional coordinate system for performing junction temperature test according to the factor value sequence and the junction temperature factor two-dimensional coordinate system, and recording the junction temperature test data. The junction temperature test three-dimensional coordinate system is based on the junction temperature factor two-dimensional coordinate system plus the vertical coordinate axis of the factor value sequence, for example: the x-axis of the junction temperature factor two-dimensional coordinate system can represent the on-state voltage drop, the y-axis can represent the collector current, and the z-axis perpendicular to the junction temperature factor two-dimensional coordinate system is added. When the secondary influencing factor corresponding to the factor value sequence is the operating frequency, the z-axis can represent the operating frequency, and the junction temperature of the junction temperature test three-dimensional coordinate system can be directly marked at the coordinate point position.

[0098] It should be understood that the junction temperature test value pair can be a conduction voltage drop of 0.8V, a collector current of 40A, and an operating frequency of 17 kHz; a conduction voltage drop of 0.8V, a collector current of 40A, and an operating frequency of 20 kHz (the standard secondary factor value of the operating frequency is 20 kHz, so the operating frequency of the junction temperature test two-dimensional coordinate system defaults to 20 kHz).

[0099] Furthermore, the junction temperature test difference refers to the junction temperature difference of the junction temperature test value pair. For example, when the test junction temperatures of the junction temperature test value pairs are: 30 , 32 ; 35, 36 ; 38 , 39 ; 41 , 43 ; 45 , 48 , the junction temperature test difference set is 2 , 1 , 1 , 2 , 3 The junction temperature test difference is 9 The junction temperature test difference value sum set refers to the set of junction temperature test difference value sums corresponding to each secondary influencing factor.

[0100] It is understandable that the junction temperature difference threshold may be 10 , the junction temperature test difference and set is 8 , 9 , 11 , 13 , 16 , then the target test difference and set is 11 , 13 , 16 , then the target factor value sequence set refers to the factor value sequence set of the secondary influencing factor set corresponding to the target test difference and set. For example: when the secondary influencing factor set corresponding to the target test difference and set is the operating frequency, duty cycle, and ambient temperature, the target factor value sequence set can be: 15 kHz, 17 kHz, 19 kHz, 21 kHz, 23 kHz, 25 kHz; 20%, 24%, 28%, 32%, 36%, 40%, 44%, 48%; 20 ,twenty two ,twenty four , 26 , 28 , 30 .

[0101] Further, the axial junction temperature coordinate axis refers to a coordinate axis representing the test junction temperature, and the radial factor coordinate axis set represents a coordinate axis set of factors affecting the junction temperature. When the number of target factor value sequences in the target factor value sequence set is 4, the number of radial factor coordinate axes is 4, and the radial factor coordinate axes are coordinate axes that are in the same plane and have an angle of 90 degrees with each other, and the axial junction temperature coordinate axis is a coordinate axis that passes through the intersection of each radial factor coordinate axis and is perpendicular to each radial factor coordinate axis.

[0102] In the embodiment of the present invention, the junction temperature test is performed according to the initial junction temperature factor multidimensional coordinate system to obtain the initial junction temperature test multidimensional coordinate system, including:

[0103] Arrange and combine the on-state voltage drop sequence, the collector current sequence, and the target factor value sequence set to obtain multiple sets of junction temperature test combination value sets, and sequentially extract junction temperature test combination value sets from the multiple sets of junction temperature test combination value sets;

[0104] Identify a junction temperature test combination coordinate point set corresponding to the junction temperature test combination value set in a radial factor coordinate axis set in the initial junction temperature factor multidimensional coordinate system;

[0105] Connecting the junction temperature test combination coordinate point sets in sequence to obtain a junction temperature test combination polygon;

[0106] Performing a junction temperature test on the current insulated gate bipolar transistor according to the junction temperature test combination value set to obtain a test junction temperature;

[0107] Identifying a junction temperature axial position of the test junction temperature in the axial junction temperature coordinate axis, translating the junction temperature test combination polygon to the junction temperature axial position, and obtaining a junction temperature test value assignment polygon;

[0108] The junction temperature test value polygons corresponding to all junction temperature test combination value sets are summarized to obtain the initial junction temperature test multi-dimensional coordinate system.

[0109] It can be explained that the permutation and combination refers to the combination of the on-state voltage drop sequence, the collector current sequence and the on-state voltage drop, the collector current and the values ​​of each target factor in each target factor value sequence. When the number of on-state voltage drops in the on-state voltage drop sequence is 5, the number of collector currents in the collector current sequence is 6, the number of target factor value sequences in the target factor value sequence set is 3, and the target factor values ​​of each target factor value sequence are 5, 6, and 7 respectively, the number of groups in the junction temperature test combination value set can be 5*6*5*6*7=6300. The junction temperature test combination coordinate point set refers to the set of coordinate points of each junction temperature test combination value in the junction temperature test combination value set on the corresponding independent variable coordinate axis. The junction temperature axial position refers to the coordinate position of the test junction temperature on the axial junction temperature coordinate axis.

[0110] S2. Predict the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle, obtain the current predicted junction temperature, obtain the current actual junction temperature, and calculate the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature.

[0111] It can be understood that the inspection cycle refers to the cycle of the prediction accuracy inspection of the current insulated bipolar transistor. The junction temperature prediction refers to the matching prediction based on the values ​​of each junction temperature influencing factor in the junction temperature influencing factor set, using the initial junction temperature test multidimensional coordinate system. The current predicted junction temperature refers to the junction temperature predicted by the initial junction temperature test multidimensional coordinate system based on the values ​​of each junction temperature influencing factor in the junction temperature influencing factor set. The current actual junction temperature refers to the measured temperature after the temperature of the current insulated gate bipolar transistor is directly measured. The current junction temperature prediction difference refers to the absolute value of the difference between the current predicted junction temperature and the current actual junction temperature.

[0112] Furthermore, since the current insulated gate bipolar transistor is sealed, a PN junction temperature sensor may be installed near the current insulated gate bipolar transistor to directly measure the current actual junction temperature.

[0113] In an embodiment of the present invention, the step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle to obtain the current predicted junction temperature includes:

[0114] Obtaining a historical inspection duration, and when the historical inspection duration is equal to the inspection period, obtaining a current factor value set;

[0115] Identify a corresponding junction temperature prediction combined coordinate point set in the radial factor coordinate axis set according to the current factor value set;

[0116] Connecting the junction temperature prediction combined coordinate point sets in sequence to obtain a junction temperature prediction combined polygon;

[0117] According to the junction temperature prediction combined polygon, combined polygon matching is performed in the initial junction temperature test multidimensional coordinate system to obtain a junction temperature test similar polygon, wherein the junction temperature test similar polygon refers to a junction temperature test valued polygon that is most similar in shape to the junction temperature prediction combined polygon;

[0118] A similar test junction temperature corresponding to the junction temperature test similar polygon is identified, and the similar test junction temperature is used as the current predicted junction temperature.

[0119] Furthermore, the historical inspection duration refers to the duration since the last inspection of the current insulated gate bipolar transistor. The current factor value set refers to the value set of the junction temperature influencing factors when the junction temperature prediction is currently being performed. The junction temperature prediction combined coordinate point set refers to the coordinate point set corresponding to the current factor value set in the radial factor coordinate axis set. The most similar shape determination method can be that the sum of the differences in the values ​​of the corresponding junction temperature influencing factors in the junction temperature prediction combined polygon and the junction temperature test value assignment polygon is the smallest. The similar test junction temperature refers to the junction temperature corresponding to the junction temperature test similar polygon in the initial junction temperature test multi-dimensional coordinate system.

[0120] S3. Determine whether the current junction temperature prediction difference is a preset new clustering object based on a pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm, wherein the DBSCAN clustering algorithm includes: an initial scanning radius and an initial minimum number of included points.

[0121] It can be understood that the historical junction temperature prediction difference set refers to a set of historical junction temperature prediction differences that meet the prediction error standard. The prediction error standard can be set by the user. The DBSCAN clustering algorithm is a prior art and will not be described in detail here. The new clustering object refers to the current junction temperature prediction difference that does not belong to the same clustering cluster as any historical junction temperature prediction difference in the historical junction temperature prediction difference set. The initial scanning radius refers to the scanning radius initially set by the DBSCAN clustering algorithm, and the initial minimum number of inclusion points refers to the minimum number of inclusion points initially set by the DBSCAN clustering algorithm. The scanning radius and the minimum number of inclusion points will not be described in detail here.

[0122] In an embodiment of the present invention, judging whether the current junction temperature prediction difference is a preset new clustering object based on the pre-acquired historical junction temperature prediction difference set and the preset DBSCAN clustering algorithm includes:

[0123] Plotting points on a pre-constructed junction temperature prediction difference axis according to the historical junction temperature prediction difference value set and the current junction temperature prediction difference value to obtain a junction temperature prediction difference value coordinate point set;

[0124] Extracting junction temperature prediction difference coordinate points in sequence from the junction temperature prediction difference coordinate point set, and identifying a directly density reachable point set of the junction temperature prediction difference coordinate points in the junction temperature prediction difference coordinate point set according to the initial scanning radius;

[0125] Eliminating the directly density reachable point set from the junction temperature prediction difference coordinate point set to obtain a junction temperature prediction difference iterative point set;

[0126] Determining whether the junction temperature prediction difference iteration point set is empty;

[0127] If the junction temperature prediction difference iteration point set is not empty, then using the junction temperature prediction difference iteration point set to update the junction temperature prediction difference coordinate point set, and returning to the above step of sequentially extracting junction temperature prediction difference coordinate points from the junction temperature prediction difference coordinate point set;

[0128] If the junction temperature prediction difference iteration point set is empty, determining whether the current junction temperature prediction difference is included in the direct density reachable point set;

[0129] If the current junction temperature prediction difference is included in the direct density reachable point set, the current junction temperature prediction difference is not a new clustering object;

[0130] If the current junction temperature prediction difference is not included in the direct density reachable point set, determining whether the current junction temperature prediction difference is a preset maximum junction temperature prediction difference;

[0131] If the current junction temperature prediction difference is not the maximum junction temperature prediction difference, then the current junction temperature prediction difference is not a new clustering object;

[0132] If the current junction temperature prediction difference is the maximum junction temperature prediction difference, the current junction temperature prediction difference is a new clustering object.

[0133] It can be explained that the junction temperature prediction difference axis refers to the coordinate axis representing the junction temperature prediction error. The direct density reachable point set refers to the direct density reachable point set of the junction temperature prediction difference coordinate point. The identification method of the direct density reachable point is the existing technology and will not be repeated here.

[0134] It can be understood that the current junction temperature prediction difference is included in the direct density reachable point set, which means that the current junction temperature prediction difference and the direct density reachable point set belong to the same cluster. The maximum junction temperature prediction difference refers to a current junction temperature prediction difference that is greater than any historical junction temperature prediction difference in the historical junction temperature prediction difference set.

[0135] If the current junction temperature prediction difference is a new clustering object, execute S4, update the initial scanning radius, and calculate the number of newly added clusters based on the initial scanning radius and the initial minimum number of included points using the historical junction temperature prediction difference set and the current junction temperature prediction difference.

[0136] It can be understood that the newly added number of clusters refers to the number of newly added clusters obtained by updating the initial scanning radius and performing cluster analysis on the historical junction temperature prediction difference set and the current junction temperature prediction difference.

[0137] In the embodiment of the present invention, the updating of the initial scanning radius includes:

[0138] Identifying a maximum junction temperature prediction difference in the historical junction temperature prediction difference set, and calculating a current prediction difference distance between the maximum junction temperature prediction difference and the current junction temperature prediction difference, wherein the current prediction difference distance refers to a difference between the maximum junction temperature prediction difference and the current junction temperature prediction difference;

[0139] The pre-built radius update formula is used to calculate and update the scanning radius according to the current predicted difference distance, wherein the radius update formula is as follows:

[0140] ;

[0141] in, Indicates the update scanning radius, represents the exponential base, Indicates the current prediction difference distance, represents the regulation index;

[0142] The initial scanning radius is updated using the updated scanning radius.

[0143] Furthermore, the exponent base being greater than 0 and less than 1 indicates that the updated scanning radius decreases as the current prediction difference distance increases. The control index can be set by the user. The smaller the control index is, the shorter the length of a single update of the initial scanning radius is.

[0144] In the embodiment of the present invention, the method of calculating the number of newly added clusters based on the initial scanning radius and the initial minimum number of included points and using the historical junction temperature prediction difference set and the current junction temperature prediction difference includes:

[0145] According to the initial scanning radius and the initial minimum number of included points, cluster analysis is performed on the junction temperature prediction difference coordinate point set using the DBSCAN clustering algorithm to obtain an updated number of cluster clusters;

[0146] Identify the number of reachable point sets of the directly density reachable point set in the junction temperature prediction difference coordinate point set;

[0147] The number of newly added clusters is calculated according to the updated number of clusters and the number of reachable point sets, wherein the number of newly added clusters refers to the absolute value of the difference between the updated number of clusters and the number of reachable point sets minus one.

[0148] It can be understood that the updated number of clusters refers to the number of clusters obtained after clustering analysis of the junction temperature prediction difference coordinate point set using the updated initial scanning radius and the initial minimum number of included points. Since the direct density reachable point set does not include the current junction temperature prediction difference, and the junction temperature prediction difference coordinate point set includes the current junction temperature prediction difference, it is necessary to reduce the absolute value of the difference by one.

[0149] S5. Calculate the current sampling frequency according to the newly added number of clusters and the preset sampling frequency formula, sample the junction temperature of the current insulated gate bipolar transistor according to the current sampling frequency and the inspection period to obtain a sampled junction temperature set, and use the sampled junction temperature set to update the initial junction temperature test multi-dimensional coordinate system.

[0150] It is understandable that the current sampling frequency refers to the frequency of sampling the junction temperature of the current insulated gate bipolar transistor. The junction temperature sampling can be performed according to the current sampling frequency and the inspection period. For example, when the inspection period is 15 days and the current sampling frequency is 100 times / day, the number of sampled junction temperatures in the sampled junction temperature set is 1500.

[0151] In the embodiment of the present invention, the sampling frequency formula is as follows:

[0152] ;

[0153] in, Indicates the current sampling frequency, represents the initial sampling frequency, represents a natural constant, Indicates the number of newly added clusters. Represents the frequency amplification index.

[0154] Furthermore, the initial sampling frequency refers to a preset initial sampling frequency, which may be 10 times / day. The frequency amplification index refers to an index for regulating the variation range of the current sampling frequency. The larger the frequency amplification index, the larger the variation range of the current sampling frequency.

[0155] In an embodiment of the present invention, the step of updating the initial junction temperature test multi-dimensional coordinate system by using the sampled junction temperature set includes:

[0156] Extracting sampled junction temperatures in the sampled junction temperature set in sequence, and identifying a junction temperature sampling combination value set of the sampled junction temperatures;

[0157] Draw a junction temperature sampling combination polygon according to the junction temperature sampling combination value set;

[0158] Identifying a junction temperature sampling similar polygon of the junction temperature sampling combination polygon in the initial junction temperature test multidimensional coordinate system, wherein the junction temperature sampling similar polygon refers to a junction temperature test value assignment polygon that is most similar in shape to the junction temperature sampling combination polygon;

[0159] updating the junction temperature sampling similarity polygon using the sampled junction temperature and the junction temperature sampling combination polygon;

[0160] Determining whether the sampled junction temperature has been extracted;

[0161] If the sampled junction temperatures have not been completely extracted, returning to the above step of sequentially extracting the sampled junction temperatures in the sampled junction temperature set;

[0162] If the sampled junction temperature extraction is completed, the initial junction temperature test multi-dimensional coordinate system is updated.

[0163] It can be understood that the junction temperature sampling combination value set refers to the value set of each junction temperature influencing factor when collecting the sampled junction temperature. For example: when collecting the sampled junction temperature, the values ​​of each junction temperature influencing factor are respectively 0.8V on-state voltage drop, 40A collector current, 17kHz operating frequency, 24% duty cycle, and 24 The junction temperature sampling combination polygon refers to a polygon drawn in the initial junction temperature test multi-dimensional coordinate system according to the junction temperature sampling combination value set.

[0164] Furthermore, consistent with the matching method of the junction temperature test similar polygon, the junction temperature sampling similar polygon can be: a junction temperature test valued polygon with the smallest sum of the difference values ​​of the corresponding junction temperature influencing factors in the junction temperature sampling combined polygon. The update method of the junction temperature sampling similar polygon is: replacing the junction temperature sampling similar polygon with the junction temperature sampling combined polygon in the initial junction temperature test multi-dimensional coordinate system.

[0165] Return to the above step of predicting the junction temperature of the pre-built current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle.

[0166] It can be understood that after the initial junction temperature test multidimensional coordinate system is updated, it is necessary to reuse the initial junction temperature test multidimensional coordinate system and the preset inspection cycle to predict the junction temperature of the current insulated gate bipolar transistor, obtain the current predicted junction temperature, and then obtain the current actual junction temperature, and use the calculated current junction temperature prediction difference to determine whether the initial junction temperature test multidimensional coordinate system still needs to be updated (if the current junction temperature prediction difference is a new clustering object, it needs to be updated; if it is not a new clustering object, it does not need to be updated).

[0167] If the current junction temperature prediction difference is not a new clustering object, then executing S6, performing temperature control on the current insulated gate bipolar transistor according to the current predicted junction temperature.

[0168] It can be understood that when the current junction temperature prediction difference is not a new clustering object, it indicates that the current junction temperature prediction difference is not much different from the historical junction temperature prediction differences in the historical junction temperature prediction difference set, and the current predicted junction temperature is within the allowable error range. Therefore, the current predicted junction temperature can be approximated as the actual junction temperature of the current insulated gate bipolar transistor.

[0169] Further, when the current predicted junction temperature is obtained, the load power of the current insulated gate bipolar transistor can be distributed according to the predicted junction temperature, for example, by adding a temperature-averaging fine-tuning virtual impedance to the traditional droop control, the current flowing through each insulated gate bipolar transistor can be adjusted by using the temperature-averaging fine-tuning virtual impedance, so that the junction temperatures of each parallel insulated gate bipolar transistor tend to be consistent. The technology of controlling the current flowing through the insulated gate bipolar transistor according to the junction temperature so that the junction temperatures of each parallel insulated gate bipolar transistor tend to be consistent is a prior art and will not be described in detail here.

[0170] Compared with the problem described in the background technology, the present invention first constructs an initial junction temperature test multidimensional coordinate system that can be used for junction temperature prediction. Specifically, it is necessary to first obtain a target factor value sequence set, and then construct an initial junction temperature factor multidimensional coordinate system based on a preset on-state voltage drop sequence, a collector current sequence and the target factor value sequence set. At this time, the junction temperature test can be performed according to the initial junction temperature factor multidimensional coordinate system, and then the junction temperature data of the junction temperature test is used to mark the junction temperature of each coordinate point in the initial junction temperature factor multidimensional coordinate system, so as to obtain the initial junction temperature test multidimensional coordinate system. After obtaining the initial junction temperature test multidimensional coordinate system, it is necessary to determine the prediction accuracy of the initial junction temperature test multidimensional coordinate system. Therefore, it is necessary to perform junction temperature prediction on the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multidimensional coordinate system and the inspection cycle to obtain the current predicted junction temperature, and then obtain the current actual junction temperature, and finally calculate the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature. In order to determine whether the initial junction temperature test multidimensional coordinate system needs to be updated, firstly, according to the historical junction temperature prediction difference set and the preset The DBSCAN clustering algorithm determines whether the current junction temperature prediction difference is a new clustering object. If the current junction temperature prediction difference is a new clustering object, it indicates that the current junction temperature prediction difference does not meet the error standard. Therefore, it is necessary to update the initial junction temperature test multidimensional coordinate system. When updating the initial junction temperature test multidimensional coordinate system, first update the initial scanning radius, and according to the initial scanning radius and the initial minimum number of included points, use the historical junction temperature prediction difference set and the current junction temperature prediction difference to calculate the number of newly added clustering clusters. The more newly added clustering clusters, the more the initial junction temperature test. The greater the degree to which the multidimensional coordinate system needs to be updated, the more it is necessary to calculate the current sampling frequency according to the newly added number of clusters and the preset sampling frequency formula before updating the initial junction temperature test multidimensional coordinate system, and then sample the junction temperature of the current insulated gate bipolar transistor according to the current sampling frequency and the inspection period to obtain a sampled junction temperature set, and finally use the sampled junction temperature set to update the initial junction temperature test multidimensional coordinate system until the current junction temperature prediction difference is not a new clustering object, and then perform temperature control on the current insulated gate bipolar transistor according to the current predicted junction temperature. Therefore, the temperature control method, system, electronic device and computer-readable storage medium for the insulated gate bipolar transistor proposed in the present invention mainly aim to improve the junction temperature prediction accuracy of the insulated gate bipolar transistor.

[0171] Example 2: Figure 2 , which is a functional module diagram of a temperature control system for an insulated gate bipolar transistor provided in one embodiment of the present invention.

[0172] The temperature control system 100 for the insulated gate bipolar transistor of the present invention can be installed in an electronic device. According to the functions to be implemented, the temperature control system 100 for the insulated gate bipolar transistor can include an initial junction temperature test multidimensional coordinate system construction module 101, a current junction temperature prediction difference calculation module 102, an initial junction temperature test multidimensional coordinate system update module 103 and a current insulated gate bipolar transistor temperature control module 104. The module of the present invention can also be referred to as a unit, which refers to a series of computer program segments that can be executed by an electronic device processor and can complete fixed functions, which are stored in the memory of the electronic device.

[0173] The initial junction temperature test multidimensional coordinate system construction module 101 is used to obtain a target factor value sequence set, construct an initial junction temperature factor multidimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence and the target factor value sequence set, perform a junction temperature test according to the initial junction temperature factor multidimensional coordinate system, and obtain an initial junction temperature test multidimensional coordinate system;

[0174] The current junction temperature prediction difference calculation module 102 is used to predict the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle, obtain the current predicted junction temperature, obtain the current actual junction temperature, and calculate the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature;

[0175] The initial junction temperature test multi-dimensional coordinate system update module 103 is used to determine whether the current junction temperature prediction difference is a preset new clustering object based on a pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm, wherein the DBSCAN clustering algorithm includes: an initial scanning radius and an initial minimum number of inclusion points; if the current junction temperature prediction difference is a new clustering object, the initial scanning radius is updated, and the number of newly added clustering clusters is calculated based on the initial scanning radius and the initial minimum number of inclusion points using the historical junction temperature prediction difference set and the current junction temperature prediction difference; the current sampling frequency is calculated based on the number of newly added clustering clusters and a preset sampling frequency formula, the junction temperature of the current insulated gate bipolar transistor is sampled based on the current sampling frequency and the inspection period, and a sampled junction temperature set is obtained, the initial junction temperature test multi-dimensional coordinate system is updated using the sampled junction temperature set, and the step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor based on the initial junction temperature test multi-dimensional coordinate system and the preset inspection period is returned to the above-mentioned step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection period;

[0176] The current IGBT temperature control module 104 is configured to control the current IGBT temperature according to the current predicted junction temperature if the current junction temperature prediction difference is not a new clustering object.

[0177] In detail, each module in the temperature control system 100 of the insulated gate bipolar transistor in the embodiment of the present invention is used in the same manner as described above. Figure 1 The same technical means as the temperature uniformity control method of the insulated gate bipolar transistor described in the invention can produce the same technical effects, which will not be described in detail here.

[0178] Example 3: Figure 3 , is a schematic diagram of the structure of an electronic device for implementing a method for uniformly controlling an insulated gate bipolar transistor provided by an embodiment of the present invention.

[0179] The electronic device 1 may include a processor 10, a memory 11, a bus 12 and a communication interface 13, and may also include a computer program stored in the memory 11 and executable on the processor 10, such as a temperature control program for an insulated gate bipolar transistor.

[0180] Among them, the memory 11 includes at least one type of readable storage medium, and the readable storage medium includes flash memory, mobile hard disk, multimedia card, card-type memory (for example: SD or DX memory, etc.), magnetic memory, disk, optical disk, etc. In some embodiments, the memory 11 can be an internal storage unit of the electronic device 1, such as a mobile hard disk of the electronic device 1. In other embodiments, the memory 11 can also be an external storage device of the electronic device 1, such as a plug-in mobile hard disk, a smart memory card (SmartMediaCard, SMC), a secure digital (SecureDigital, SD) card, a flash card (FlashCard), etc. equipped on the electronic device 1. Further, the memory 11 can also include both an internal storage unit of the electronic device 1 and an external storage device. The memory 11 can not only be used to store application software and various types of data installed in the electronic device 1, such as the code of the temperature control program of the insulated gate bipolar transistor, but also can be used to temporarily store data that has been output or is to be output.

[0181] The processor 10 may be composed of an integrated circuit in some embodiments, for example, a single packaged integrated circuit, or a plurality of packaged integrated circuits with the same or different functions, including one or more central processing units (CPUs), microprocessors, digital processing chips, graphics processors, and a combination of various control chips, etc. The processor 10 is the control core (Control Unit) of the electronic device, and uses various interfaces and lines to connect various components of the entire electronic device, and executes various functions and processes data of the electronic device 1 by running or executing programs or modules (such as temperature control programs of insulated gate bipolar transistors, etc.) stored in the memory 11, and calling data stored in the memory 11.

[0182] The bus may be a peripheral component interconnect (PCI) bus or an extended industry standard architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. The bus is configured to realize connection and communication between the memory 11 and at least one processor 10, etc.

[0183] Figure 3 Only an electronic device with components is shown, and those skilled in the art will understand that Figure 3 The structure shown does not constitute a limitation on the electronic device 1, and may include fewer or more components than shown in the figure, or combine certain components, or arrange the components differently.

[0184] For example, although not shown, the electronic device 1 may also include a power source (such as a battery) for supplying power to various components. Preferably, the power source may be logically connected to the at least one processor 10 through a power management system, so that the power management system can realize functions such as charging management, discharging management, and power consumption management. The power source may also include any components such as one or more DC or AC power sources, recharging systems, power failure detection circuits, power converters or inverters, and power status indicators. The electronic device 1 may also include a variety of sensors, Bluetooth modules, Wi-Fi modules, etc., which will not be repeated here.

[0185] Furthermore, the electronic device 1 may also include a network interface. Optionally, the network interface may include a wired interface and / or a wireless interface (such as a WI-FI interface, a Bluetooth interface, etc.), which is generally used to establish a communication connection between the electronic device 1 and other electronic devices.

[0186] Optionally, the electronic device 1 may further include a user interface, which may be a display (Display), an input unit (such as a keyboard (Keyboard)), and optionally, the user interface may also be a standard wired interface or a wireless interface. Optionally, in some embodiments, the display may be an LED display, a liquid crystal display, a touch-sensitive liquid crystal display, and an OLED (Organic Light-Emitting Diode) touch device, etc. The display may also be appropriately referred to as a display screen or a display unit, which is used to display information processed in the electronic device 1 and to display a visual user interface.

[0187] It should be understood that the embodiment is for illustration only and the scope of the patent application is not limited to this structure.

[0188] The temperature control program for the insulated gate bipolar transistor stored in the memory 11 in the electronic device 1 is a combination of multiple instructions. When running in the processor 10, the following can be achieved:

[0189] Obtain a target factor value sequence set, construct an initial junction temperature factor multidimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence, and the target factor value sequence set, perform a junction temperature test according to the initial junction temperature factor multidimensional coordinate system, and obtain an initial junction temperature test multidimensional coordinate system;

[0190] Predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle, obtaining the current predicted junction temperature, acquiring the current actual junction temperature, and calculating the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature;

[0191] Determining whether the current junction temperature prediction difference is a preset new clustering object according to a pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm, wherein the DBSCAN clustering algorithm includes: an initial scanning radius and an initial minimum number of included points;

[0192] If the current junction temperature prediction difference is a new clustering object, the initial scanning radius is updated, and the number of newly added clusters is calculated using the historical junction temperature prediction difference set and the current junction temperature prediction difference according to the initial scanning radius and the initial minimum number of included points;

[0193] Calculating the current sampling frequency according to the newly added number of clusters and the preset sampling frequency formula, sampling the junction temperature of the current insulated gate bipolar transistor according to the current sampling frequency and the inspection period to obtain a sampled junction temperature set, updating the initial junction temperature test multidimensional coordinate system using the sampled junction temperature set, and returning to the above step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multidimensional coordinate system and the preset inspection period;

[0194] If the current predicted junction temperature difference is not a new clustering object, the current insulated gate bipolar transistor is temperature-controlled according to the current predicted junction temperature.

[0195] Specifically, the specific implementation method of the processor 10 for the above instructions can refer to Figure 1 to Figure 2 The description of the relevant steps in the corresponding embodiments will not be repeated here.

[0196] Furthermore, if the module / unit integrated in the electronic device 1 is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. The computer-readable storage medium can be volatile or non-volatile. For example, the computer-readable medium can include: any entity or system that can carry the computer program code, a recording medium, a USB flash drive, a mobile hard disk, a magnetic disk, an optical disk, a computer memory, and a read-only memory (ROM).

[0197] The present invention further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor of an electronic device, the computer program can implement:

[0198] Obtain a target factor value sequence set, construct an initial junction temperature factor multidimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence, and the target factor value sequence set, perform a junction temperature test according to the initial junction temperature factor multidimensional coordinate system, and obtain an initial junction temperature test multidimensional coordinate system;

[0199] Predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle, obtaining the current predicted junction temperature, acquiring the current actual junction temperature, and calculating the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature;

[0200] Determining whether the current junction temperature prediction difference is a preset new clustering object according to a pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm, wherein the DBSCAN clustering algorithm includes: an initial scanning radius and an initial minimum number of included points;

[0201] If the current junction temperature prediction difference is a new clustering object, the initial scanning radius is updated, and the number of newly added clusters is calculated using the historical junction temperature prediction difference set and the current junction temperature prediction difference according to the initial scanning radius and the initial minimum number of included points;

[0202] Calculating the current sampling frequency according to the newly added number of clusters and the preset sampling frequency formula, sampling the junction temperature of the current insulated gate bipolar transistor according to the current sampling frequency and the inspection period to obtain a sampled junction temperature set, updating the initial junction temperature test multidimensional coordinate system using the sampled junction temperature set, and returning to the above step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multidimensional coordinate system and the preset inspection period;

[0203] If the current predicted junction temperature difference is not a new clustering object, the current insulated gate bipolar transistor is temperature-controlled according to the current predicted junction temperature.

[0204] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0205] In addition, each functional module in each embodiment of the present invention may be integrated into one processing unit, each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of hardware plus software functional modules.

[0206] It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention.

[0207] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention.

Claims

1. A method for controlling the temperature of an insulated gate bipolar transistor, characterized in that: The method comprises: Obtain a target factor value sequence set, construct an initial junction temperature factor multidimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence, and the target factor value sequence set, perform a junction temperature test according to the initial junction temperature factor multidimensional coordinate system, and obtain an initial junction temperature test multidimensional coordinate system; Predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle, obtaining the current predicted junction temperature, acquiring the current actual junction temperature, and calculating the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature; Determining whether the current junction temperature prediction difference is a preset new clustering object according to a pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm, wherein the DBSCAN clustering algorithm includes: an initial scanning radius and an initial minimum number of included points; If the current junction temperature prediction difference is a new clustering object, the initial scanning radius is updated, and the number of newly added clusters is calculated using the historical junction temperature prediction difference set and the current junction temperature prediction difference according to the initial scanning radius and the initial minimum number of included points; Calculating the current sampling frequency according to the newly added number of clusters and the preset sampling frequency formula, sampling the junction temperature of the current insulated gate bipolar transistor according to the current sampling frequency and the inspection period to obtain a sampled junction temperature set, updating the initial junction temperature test multidimensional coordinate system using the sampled junction temperature set, and returning to the above step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multidimensional coordinate system and the preset inspection period; If the current predicted junction temperature difference is not a new clustering object, the current insulated gate bipolar transistor is temperature-controlled according to the current predicted junction temperature.

2. The method for controlling the temperature of an insulated gate bipolar transistor according to claim 1, wherein: The step of obtaining a target factor value sequence set and constructing an initial junction temperature factor multi-dimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence, and the target factor value sequence set includes: Obtaining a junction temperature influencing factor set of an insulated gate bipolar transistor, and identifying a secondary influencing factor set in the junction temperature influencing factor set, wherein the junction temperature influencing factor set includes a secondary influencing factor set, a conduction voltage drop, and a collector current, and the secondary influencing factor set includes: operating frequency, duty cycle, ambient temperature, switching loss, and gate drive loss; Constructing a two-dimensional coordinate system of junction temperature factor according to the on-state voltage drop sequence and the collector current sequence, wherein the horizontal axis of the two-dimensional coordinate system of junction temperature factor represents the on-state voltage drop, and the vertical axis represents the collector current; Performing a junction temperature test according to the junction temperature factor two-dimensional coordinate system and a preset standard secondary factor value set to obtain a junction temperature test two-dimensional coordinate system; Extracting secondary influencing factors in the secondary influencing factor set in sequence, identifying a factor value sequence corresponding to the secondary influencing factors, performing a junction temperature test according to the factor value sequence and the junction temperature factor two-dimensional coordinate system, and obtaining a junction temperature test three-dimensional coordinate system; sequentially identifying a junction temperature test value pair in the junction temperature test three-dimensional coordinate system and the junction temperature test two-dimensional coordinate system, wherein the junction temperature test value pair refers to a pair of junction temperature test values ​​having the same forward voltage drop and collector current but different values ​​of secondary influencing factors; Calculating a junction temperature test difference of the junction temperature test value pair to obtain a junction temperature test difference set, and calculating a junction temperature test difference sum of the junction temperature test difference set to obtain a junction temperature test difference sum set; Identifying a target test difference value set from the junction temperature test difference value set according to a preset junction temperature difference threshold, and identifying a target factor value sequence set corresponding to the target test difference value set; An initial junction temperature factor multidimensional coordinate system is constructed according to the target factor value sequence set, the on-state voltage drop sequence and the collector current sequence, wherein the initial junction temperature factor multidimensional coordinate system includes: an axial junction temperature coordinate axis and a radial factor coordinate axis set, wherein the radial factor coordinate axis set is coplanar and perpendicular to the axial junction temperature coordinate axis.

3. The temperature control method of the insulated gate bipolar transistor according to claim 2, characterized in that: The step of performing a junction temperature test according to the initial junction temperature factor multidimensional coordinate system to obtain an initial junction temperature test multidimensional coordinate system includes: Arrange and combine the on-state voltage drop sequence, the collector current sequence, and the target factor value sequence set to obtain multiple sets of junction temperature test combination value sets, and sequentially extract junction temperature test combination value sets from the multiple sets of junction temperature test combination value sets; Identify a junction temperature test combination coordinate point set corresponding to the junction temperature test combination value set in a radial factor coordinate axis set in the initial junction temperature factor multidimensional coordinate system; Connecting the junction temperature test combination coordinate point sets in sequence to obtain a junction temperature test combination polygon; Performing a junction temperature test on the current insulated gate bipolar transistor according to the junction temperature test combination value set to obtain a test junction temperature; Identifying a junction temperature axial position of the test junction temperature in the axial junction temperature coordinate axis, translating the junction temperature test combination polygon to the junction temperature axial position, and obtaining a junction temperature test value assignment polygon; The junction temperature test value polygons corresponding to all junction temperature test combination value sets are summarized to obtain the initial junction temperature test multi-dimensional coordinate system.

4. The method for controlling the temperature of an insulated gate bipolar transistor according to claim 3, wherein: The step of predicting the junction temperature of the pre-built current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle to obtain the current predicted junction temperature includes: Obtaining a historical inspection duration, and when the historical inspection duration is equal to the inspection period, obtaining a current factor value set; Identify a corresponding junction temperature prediction combined coordinate point set in the radial factor coordinate axis set according to the current factor value set; Connecting the junction temperature prediction combined coordinate point sets in sequence to obtain a junction temperature prediction combined polygon; According to the junction temperature prediction combined polygon, combined polygon matching is performed in the initial junction temperature test multidimensional coordinate system to obtain a junction temperature test similar polygon, wherein the junction temperature test similar polygon refers to a junction temperature test valued polygon that is most similar in shape to the junction temperature prediction combined polygon; A similar test junction temperature corresponding to the junction temperature test similar polygon is identified, and the similar test junction temperature is used as the current predicted junction temperature.

5. The temperature control method of the insulated gate bipolar transistor according to claim 4, characterized in that: The determining whether the current junction temperature prediction difference is a preset new clustering object according to the pre-acquired historical junction temperature prediction difference set and the preset DBSCAN clustering algorithm includes: Plotting points on a pre-constructed junction temperature prediction difference axis according to the historical junction temperature prediction difference value set and the current junction temperature prediction difference value to obtain a junction temperature prediction difference value coordinate point set; Extracting junction temperature prediction difference coordinate points in sequence from the junction temperature prediction difference coordinate point set, and identifying a directly density reachable point set of the junction temperature prediction difference coordinate points in the junction temperature prediction difference coordinate point set according to the initial scanning radius; Eliminating the directly density reachable point set from the junction temperature prediction difference coordinate point set to obtain a junction temperature prediction difference iterative point set; Determining whether the junction temperature prediction difference iteration point set is empty; If the junction temperature prediction difference iteration point set is not empty, then using the junction temperature prediction difference iteration point set to update the junction temperature prediction difference coordinate point set, and returning to the above step of sequentially extracting junction temperature prediction difference coordinate points from the junction temperature prediction difference coordinate point set; If the junction temperature prediction difference iteration point set is empty, determining whether the current junction temperature prediction difference is included in the direct density reachable point set; If the current junction temperature prediction difference is included in the direct density reachable point set, the current junction temperature prediction difference is not a new clustering object; If the current junction temperature prediction difference is not included in the direct density reachable point set, determining whether the current junction temperature prediction difference is a preset maximum junction temperature prediction difference; If the current junction temperature prediction difference is not the maximum junction temperature prediction difference, then the current junction temperature prediction difference is not a new clustering object; If the current junction temperature prediction difference is the maximum junction temperature prediction difference, the current junction temperature prediction difference is a new clustering object.

6. The temperature uniformity control method of the insulated gate bipolar transistor according to claim 5, characterized in that: The updating of the initial scanning radius comprises: Identifying a maximum junction temperature prediction difference in the historical junction temperature prediction difference set, and calculating a current prediction difference distance between the maximum junction temperature prediction difference and the current junction temperature prediction difference, wherein the current prediction difference distance refers to a difference between the maximum junction temperature prediction difference and the current junction temperature prediction difference; The pre-built radius update formula is used to calculate and update the scanning radius according to the current predicted difference distance, wherein the radius update formula is as follows: ； in, Indicates updating the scanning radius. represents the exponential base, Indicates the current prediction difference distance, represents the regulation index; The initial scanning radius is updated using the updated scanning radius.

7. The method for controlling the temperature of an insulated gate bipolar transistor according to claim 6, wherein: The calculating of the number of newly added clusters based on the initial scanning radius and the initial minimum number of included points and using the historical junction temperature prediction difference set and the current junction temperature prediction difference includes: According to the initial scanning radius and the initial minimum number of included points, cluster analysis is performed on the junction temperature prediction difference coordinate point set using the DBSCAN clustering algorithm to obtain an updated number of cluster clusters; Identify the number of reachable point sets of the directly density reachable point set in the junction temperature prediction difference coordinate point set; The number of newly added clusters is calculated according to the updated number of clusters and the number of reachable point sets, wherein the number of newly added clusters refers to the absolute value of the difference between the updated number of clusters and the number of reachable point sets minus one.

8. The method for controlling the temperature of an insulated gate bipolar transistor according to claim 7, wherein: The sampling frequency formula is as follows: ； in, Indicates the current sampling frequency, represents the initial sampling frequency, represents a natural constant, Indicates the number of newly added clusters. Represents the frequency amplification index.

9. The method for controlling the temperature of an insulated gate bipolar transistor according to claim 8, wherein: The method of updating the initial junction temperature test multi-dimensional coordinate system by using the sampled junction temperature set includes: Extracting sampled junction temperatures in the sampled junction temperature set in sequence, and identifying a junction temperature sampling combination value set of the sampled junction temperatures; Draw a junction temperature sampling combination polygon according to the junction temperature sampling combination value set; Identifying a junction temperature sampling similar polygon of the junction temperature sampling combination polygon in the initial junction temperature test multidimensional coordinate system, wherein the junction temperature sampling similar polygon refers to a junction temperature test value assignment polygon that is most similar in shape to the junction temperature sampling combination polygon; updating the junction temperature sampling similarity polygon using the sampled junction temperature and the junction temperature sampling combination polygon; Determining whether the sampled junction temperature has been extracted; If the sampled junction temperatures have not been completely extracted, returning to the above step of sequentially extracting the sampled junction temperatures in the sampled junction temperature set; If the sampled junction temperature extraction is completed, the initial junction temperature test multi-dimensional coordinate system is updated.

10. A temperature control system for an insulated gate bipolar transistor, characterized in that: The system comprises: An initial junction temperature test multidimensional coordinate system construction module is used to obtain a target factor value sequence set, construct an initial junction temperature factor multidimensional coordinate system according to a preset on-state voltage drop sequence, a collector current sequence and the target factor value sequence set, perform a junction temperature test according to the initial junction temperature factor multidimensional coordinate system, and obtain an initial junction temperature test multidimensional coordinate system; A current junction temperature prediction difference calculation module is used to predict the junction temperature of the pre-constructed current insulated gate bipolar transistor according to the initial junction temperature test multi-dimensional coordinate system and the preset inspection cycle, obtain the current predicted junction temperature, obtain the current actual junction temperature, and calculate the current junction temperature prediction difference between the current actual junction temperature and the current predicted junction temperature; An initial junction temperature test multidimensional coordinate system update module is used to determine whether the current junction temperature prediction difference is a preset new clustering object based on a pre-acquired historical junction temperature prediction difference set and a preset DBSCAN clustering algorithm, wherein the DBSCAN clustering algorithm includes: an initial scanning radius and an initial minimum number of inclusion points; if the current junction temperature prediction difference is a new clustering object, the initial scanning radius is updated, and the number of newly added clustering clusters is calculated based on the initial scanning radius and the initial minimum number of inclusion points using the historical junction temperature prediction difference set and the current junction temperature prediction difference; the current sampling frequency is calculated based on the number of newly added clustering clusters and a preset sampling frequency formula, the junction temperature of the current insulated gate bipolar transistor is sampled based on the current sampling frequency and the inspection period, and a sampled junction temperature set is obtained, the initial junction temperature test multidimensional coordinate system is updated using the sampled junction temperature set, and the step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor based on the initial junction temperature test multidimensional coordinate system and the preset inspection period is returned to the above-mentioned step of predicting the junction temperature of the pre-constructed current insulated gate bipolar transistor based on the initial junction temperature test multidimensional coordinate system and the preset inspection period; The current insulated gate bipolar transistor average temperature control module is used to perform average temperature control on the current insulated gate bipolar transistor according to the current predicted junction temperature if the current junction temperature prediction difference is not a new clustering object.

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