Miniature light emitting diode

Abstract

A substrate is provided with a conductive layer, a light-emitting component is arranged on the conductive layer, and a first light-emitting semiconductor and a second light-emitting semiconductor of the light-emitting component are vertically stacked. And the first light-emitting semiconductor and the second light-emitting semiconductor are conducted through a first conductive bump and a second conductive bump of a conductive bump group, so that the size of the miniature light-emitting diode is reduced.

Description

Technical Field

[0001] The present invention relates to a structure, in particular to a micro light emitting diode. Background Art

[0002] With the continuous advancement of science and technology and the continuous development of display technology in recent years, light-emitting diodes (LEDs) are increasingly used in display panels.

[0003] LED lamps refer to lamps that use light-emitting diodes (LEDs) as light sources. They are generally made of semiconductor LEDs. Semiconductor LEDs are a type of semiconductor light source that emits light when current passes through them. They are electroluminescent semiconductor electronic components in which electrons and electron holes recombine to release energy in the form of photons. The core part of the light-emitting diode structure is the pn junction, and the peripheral part has epoxy resin to seal its leads and frame to protect the internal core wires. When a forward current passes through the pn junction, it can emit visible or invisible radiation, which is a composite light source composed of trivalent and pentavalent elements.

[0004] The lifespan and luminous efficiency of LED lamps can be several times that of incandescent lamps, and are also much higher than those of integrated fluorescent lamps. The brightness of a single light-emitting diode is much lower than that of traditional incandescent lamps and energy-saving bulbs, so a bulb usually contains multiple light-emitting diodes.

[0005] In recent years, the technology of light-emitting diodes has been improved, and high-power, high-brightness light-emitting diodes have been launched one after another, making this type of bulb gradually replace other traditional light sources. Some manufacturers have launched single-design high-power LED chips for lighting, which can emit 7,527 lumens of brightness with only 100 watts of electricity. In addition to being used in lamps designed specifically for LEDs, LEDs can also be made into bulbs compatible with other light sources after adding conversion circuits and related stabilization devices, and installed in lamps with traditional light sources.

[0006] However, in the existing technology of using LED to emit light, when the LED is used as the light source in the light emitting module, the LED needs to be electrically connected to a driving component that drives the LED so that the LED can generate light and emit light.

[0007] However, since the electrode wires connecting the light emitting diodes and the driving components in the existing light emitting modules are usually not in the same layer, it is necessary to drill holes in the substrate so that the light emitting diodes can be electrically connected to the electrode wires of the driving components.

[0008] In the existing conventional technology, a light emitting module usually needs to produce a certain amount of light source with a certain amount of lumens, so at least a certain number of light emitting diodes need to be arranged in the light emitting module, thus generating a large number of electrode wires. The electrode wires also increase the size of the photodiode, further complicating the circuit layout inside the light emitting module and further increasing the size of the light emitting module.

[0009] Therefore, how to manufacture a micro photodiode with reduced number of electrode lines and smaller overall area is a problem that technicians in this field want to solve. Summary of the invention

[0010] One purpose of the present invention is to provide a micro light emitting diode, which is formed by vertically stacking a first light emitting semiconductor and a second light emitting semiconductor to reduce the overall volume. Due to the structure formed by the vertical stacking, the number of connecting electrode lines is halved, thereby achieving the purpose of reducing the number of starting electrode lines.

[0011] In view of the above-mentioned purpose, the present invention provides a micro light emitting diode, which includes a substrate, a conductive layer, a light emitting component and a conductive bump group, wherein the conductive layer includes a first electrode and a second electrode, wherein the first electrode and the second electrode are arranged on the substrate at intervals, the light emitting component is arranged above the conductive layer, the light emitting component includes a first light emitting semiconductor and a second light emitting semiconductor, wherein the second light emitting semiconductor is arranged vertically to the first light emitting semiconductor, a first light emitting element of the first light emitting semiconductor has a first light emitting layer, wherein the first light emitting layer has a first area, the second light emitting element has a second light emitting layer, and the second light emitting semiconductor has a second area. The layer has a second area, which is larger than the first area. The conductive bump group includes a first conductive bump and a second conductive bump. One end of the first conductive bump is arranged on the first electrode and extends to one side of the first N-type electrode and one side of the second P-type electrode. One end of the second conductive bump is arranged on the second electrode and extends to one side of the first P-type electrode and one side of the second N-type electrode. During a visual persistence time, when any of the first electrode and the second electrode receives a control signal of the conductive layer, it is used to electrically conduct any of the first light-emitting semiconductor and the second light-emitting semiconductor.

[0012] The present invention provides an embodiment, wherein the control signal includes a first electrical signal and a second electrical signal, and the first electrical signal and the second electrical signal are used to electrically turn on the first light emitting semiconductor and the second light emitting semiconductor in sequence.

[0013] The present invention provides an embodiment, wherein the light emitting wavelength of the first light emitting element and the light emitting wavelength of the second light emitting element are between 300 nm and 800 nm.

[0014] The present invention provides an embodiment, wherein the light emitting wavelength of the first light emitting element and the light emitting wavelength of the second light emitting element are different light emitting wavelengths.

[0015] The present invention provides an embodiment, wherein one end of the first conductive bump is electrically connected to a junction between the first N-type semiconductor and the second P-type semiconductor, and the other end of the first conductive bump is electrically connected to the first electrode.

[0016] The present invention provides an embodiment, wherein one end of the second conductive bump is electrically connected to a junction between the first P-type semiconductor and the second N-type semiconductor, and the other end of the second conductive bump is electrically connected to the second electrode.

[0017] The present invention provides an embodiment, wherein the conductive layer further includes a third electrode and a fourth electrode, the third electrode is disposed on one side of the second electrode, and the fourth electrode is disposed on the other side of the third electrode with an interval.

[0018] The present invention provides an embodiment, further comprising a third light-emitting semiconductor, which comprises a third light-emitting element, a third N-type electrode and a third P-type electrode. One end of the third N-type electrode and one end of the third P-type electrode are arranged on one side of the third light-emitting element, the other end of the third N-type electrode is arranged on the fourth electrode, and the other end of the third P-type electrode is arranged on the third electrode. The third electrode transmits a third electrical signal of the control signal through the third light-emitting semiconductor to the fourth electrode, so that the third light-emitting semiconductor is continuously electrically conductive.

[0019] The present invention provides an embodiment, wherein the light emission wavelength of the third light emitting element is between 300nm and 800nm, and the light emission wavelength of the third light emitting element is different from the light emission wavelength of the first light emitting element and the light emission wavelength of the second light emitting element.

[0020] The present invention provides an embodiment, wherein the first light-emitting element, the second light-emitting element and the third light-emitting element respectively include an N-type semiconductor and a P-type semiconductor, the N-type semiconductor is respectively arranged below the first light-emitting layer, the second light-emitting layer and the third light-emitting layer, the P-type semiconductor is respectively arranged above the first light-emitting layer, the second light-emitting layer and the third light-emitting layer, and the N-type semiconductor is arranged on an insulating substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1A : It is a schematic diagram of the structure of a micro light emitting diode according to a first embodiment of the present invention; Figure 1B :It is a schematic diagram of a circuit of a micro light emitting diode according to a first embodiment of the present invention; Figure 1C:It is a schematic diagram of a control signal of a micro light emitting diode according to a first embodiment of the present invention; Figure 2A :It is a schematic diagram of the structure of the first light-emitting element of a first embodiment of the present invention; Figure 2B :It is a schematic diagram of the structure of the second light-emitting element of a first embodiment of the present invention; Figure 3A : It is a schematic diagram of the structure of a micro light emitting diode according to a second embodiment of the present invention; and Figure 3B : It is a schematic diagram of the structure of the first light-emitting element of a second embodiment of the present invention.

Figure number comparison

[0022] In order to further understand and appreciate the structural features and effects of the present invention, a preferred embodiment and detailed description are provided as follows:

[0023] In conventional light-emitting modules using light-emitting diodes (LEDs), the electrode wires connecting the light-emitting diodes and the driving components are usually not on the same layer, and holes need to be drilled on the substrate so that the light-emitting diodes can be electrically connected to the electrode wires of the driving components. Usually, if a light source with a certain lumen is required in the light-emitting module, at least a certain number of light-emitting diodes need to be arranged in the light-emitting module, and thus a large number of electrode wires are generated, making the circuit layout inside the light-emitting module very complicated and increasing the size of the light-emitting module.

[0024] The present invention discloses a micro light emitting diode, which is formed by vertically stacking a first light emitting semiconductor and a second light emitting semiconductor. Due to the vertical stacking structure, the number of connecting electrode lines is halved, thereby achieving the purpose of reducing the number of starting electrode lines and reducing the overall volume.

[0025] Hereinafter, the present invention will be described in detail by illustrating various embodiments of the present invention with reference to the drawings. However, the concept of the present invention may be embodied in many different forms and should not be construed as being limited to the exemplary embodiments described herein.

[0026] First, see Figure 1A , which is a schematic diagram of the structure of a micro light emitting diode of a first embodiment of the present invention. As shown in the figure, the micro light emitting diode of this embodiment includes a substrate 10, a conductive layer 20, a light emitting component 30 and a conductive bump group 40.

[0027] In this embodiment, the conductive layer 20 is disposed on the substrate 10, and the conductive layer 20 includes a first electrode 22 and a second electrode 24. The first electrode 22 and the second electrode 24 are disposed on the substrate 10 at intervals, and the material of the substrate 10 is selected from one of gallium nitride, gallium arsenide, gallium phosphide, indium phosphide, silicon carbide and aluminum oxide.

[0028] In this embodiment, the light emitting element 30 is disposed above the conductive layer 20 , and includes a first light emitting semiconductor 32 and a second light emitting semiconductor 34 .

[0029] In this embodiment, the first light-emitting semiconductor 32 includes a first light-emitting element 321, a first N-type electrode 323 and a first P-type electrode 325, one side of the first light-emitting element 321 is arranged above the conductive layer 20, and the first N-type electrode 323 and the first P-type electrode 325 are arranged on the other side of the first light-emitting element 321, wherein the first light-emitting element 321 has a first light-emitting layer 3215, and the first light-emitting layer 3215 has a first area D1.

[0030] Among them, see Figure 2A , which is a schematic diagram of the structure of the first light-emitting element of a first embodiment of the present invention. As shown in the figure, the first light-emitting element includes an N-type semiconductor 3213 and a P-type semiconductor 3217. The N-type semiconductor 3213 is arranged below the first light-emitting layer 3215, and the P-type semiconductor 3217 is arranged above the first light-emitting layer 3215. The N-type semiconductor 3213 is arranged on an insulating substrate 3211. One side of the first light-emitting element 321 is arranged above the conductive layer 20, and the first light-emitting element 321 is not electrically connected to the conductive layer 20 through the insulating substrate 3211.

[0031] Next, please refer to Figure 1A , and please also refer to Figure 2B , which is a schematic diagram of the structure of the second light-emitting element of a first embodiment of the present invention. As shown in the figure, in this embodiment, the second light-emitting semiconductor 34 is vertically arranged above the first light-emitting semiconductor 32. The second light-emitting semiconductor 34 includes a second light-emitting element 341, a second N-type electrode 343 and a second P-type electrode 345. The second N-type electrode 343 is arranged above the first P-type electrode 325, and the second P-type electrode 345 is arranged above the first N-type electrode 323. The second light-emitting element 341 is arranged above the second P-type electrode 345 and the second N-type electrode 343, wherein the second light-emitting element 341 has a second light-emitting layer 3415, and the second light-emitting layer 3415 has a second area D2, and the first area D1 is larger than the second area D2. By setting the first area D1 of the first light-emitting element 321 of the first light-emitting semiconductor 32 below to be larger than the second area D2 of the second light-emitting element 341, it is ensured that the light source can be scattered normally.

[0032] In this embodiment, the structure of the second light-emitting element 341 includes the N-type semiconductor 3213 and the P-type semiconductor 3217. The N-type semiconductor 3213 is arranged below the second light-emitting layer 3415, and the P-type semiconductor 3217 is arranged above the second light-emitting layer 3415. The N-type semiconductor 3213 is arranged on the insulating substrate 3211.

[0033] In this embodiment, the light emitting wavelength of the first light emitting element 321 and the light emitting wavelength of the second light emitting element 341 are between 300nm and 800nm, and the light emitting wavelength of the first light emitting element 321 and the light emitting wavelength of the second light emitting element 341 are different light emitting wavelengths. In other words, when the wavelength of the first light emitting element 321 is red light (710nm), the wavelength of the second light emitting element 341 will be blue light (470nm) or green light (550nm), and will not be the same red light. The same is true if the first light emitting element 321 is blue light (or green light).

[0034] Next, in this embodiment, please refer to Figure 1A The conductive bump group 40 includes a first conductive bump 42 and a second conductive bump 44. One end of the first conductive bump 42 is disposed on the first electrode 22 and extends to one side of the first N-type electrode 323 and one side of the second P-type electrode 345. One end of the second conductive bump 44 is disposed on the second electrode 24 and extends to one side of the first P-type electrode 325 and one side of the second N-type electrode 343.

[0035] Among them, in this embodiment, one end of the first conductive bump 42 is connected to the first electrode 22 and the joint between the first N-type semiconductor 323 and the second P-type semiconductor 345 through an electrical connection method, and one end of the second conductive bump 44 is connected to the second electrode 24 and the joint between the first P-type semiconductor 325 and the second N-type semiconductor 343 through an electrical connection method, so that the micro light-emitting diode of this embodiment can drive the light-emitting component 30 to emit light through the conductive bump group 40.

[0036] In this embodiment, please refer to Figure 1B , which is a schematic diagram of a circuit of a micro-light emitting diode of a first embodiment of the present invention. As shown in the figure, the positive electrode of the first light emitting semiconductor 32 is electrically connected to the negative electrode of the second light emitting semiconductor 34, and at the same time, the positive electrode of the second light emitting semiconductor 34 is electrically connected to the positive electrode of the first light emitting semiconductor 32, so that a cycle is formed between the first light emitting semiconductor 32 and the second light emitting semiconductor 34, so that the micro-light emitting diode of this embodiment can emit light after power is turned on.

[0037] Please refer to Figure 1A , and please refer to Figure 1C , which is a schematic diagram of a control signal of a micro light emitting diode of a first embodiment of the present invention. As shown in the figure, in this embodiment, within a visual persistence time (not shown), when any of the first electrode 22 and the second electrode 24 receives a control signal (not shown) of the conductive layer 20, it is used to electrically conduct any of the first light emitting semiconductor 32 and the second light emitting semiconductor 34.

[0038] In this embodiment, the control signal includes a first electrical signal 221 and a second electrical signal 241. The first electrical signal 221 and the second electrical signal 241 are used to electrically conduct the first light emitting semiconductor and the second light emitting semiconductor in sequence. Furthermore, the first electrical signal 221 and the second electrical signal 241 are electrically conducted in an alternating manner.

[0039] In this embodiment, the control signal is used to transmit the first electrical signal 221 to the second electrode 24 via the first electrode 22 to the first light emitting semiconductor 32, and the second electrical signal 241 to the first electrode 22 via the second electrode 24 to the second light emitting semiconductor 34 during the visual persistence time, wherein the visual persistence time includes a first time T1, a second time T2, a third time T3 and a fourth time T4.

[0040] The control signal is a pulse width modulation (PWM) signal. Furthermore, the visual persistence time refers to the time delay and residual of about 0.01 to 0.1 seconds for human eyes to see objects or moving objects. The preferred visual persistence time is 0.1 seconds.

[0041] In this embodiment, when the first electrical signal 221 and the second electrical signal 241 apply a lower voltage to the first light emitting semiconductor 32 and the second light emitting semiconductor 34 at the first time T1, since there is no voltage difference between the two, the first light emitting semiconductor 32 and the second light emitting semiconductor 34 are both in the off state (not emitting light).

[0042] If the first electrical signal 221 applies a higher voltage to the first light emitting semiconductor 32 at the second time T2, and the second electrical signal 241 applies a lower voltage to the second light emitting semiconductor 34 at the second time T2, the first light emitting semiconductor 32 will be turned on (emitting light), and the second light emitting semiconductor 34 will be turned off (not emitting light) due to the reverse current.

[0043] In addition, when the first electrical signal 221 applies a lower voltage to the first light-emitting semiconductor 32 at the third time T3, and the second electrical signal 241 applies a higher voltage to the second light-emitting semiconductor 34 at the third time T3, the first light-emitting semiconductor 32 will be in a closed state (not emitting light) due to the reverse current, and the second light-emitting semiconductor 34 will be in an open state (emitting light).

[0044] If the first electrical signal 221 and the second electrical signal 241 apply a high voltage to the first light emitting semiconductor 32 and the second light emitting semiconductor 34 at the fourth time T4, since there is no voltage difference between the two, the first light emitting semiconductor 32 and the second light emitting semiconductor 34 are both in the off state (not emitting light).

[0045] In this embodiment, only one of the first light emitting semiconductor 32 and the second light emitting semiconductor 34 is in an electrically conductive on state, and neither of them is in a simultaneously on state. That is, when the first light emitting semiconductor 32 is lit, the second light emitting semiconductor 34 is in an off state, and vice versa. This light emitting method can effectively highlight the difference between flat RGB pixels.

[0046] In addition, further in this embodiment, when the first light emitting semiconductor 32 emits a fluorescent wavelength (for example: 365nm), it cooperates with the wavelength of the light source emitted by the second light emitting semiconductor 34 to produce a visual effect on the retina during the visual persistence time, so that the micro light emitting diode received by the user appears as white light.

[0047] In the past, light-emitting diodes were usually formed into lighting devices with a single light-emitting semiconductor array. However, in such a structure, the electrode wires connecting the light-emitting diodes and the driving components are usually not on the same layer. Holes need to be drilled on the substrate so that the light-emitting diodes can be electrically connected to the electrode wires of the driving components. Therefore, a large number of electrode wires are generated, making the circuit layout inside the light-emitting module very complicated and increasing the size of the light-emitting module.

[0048] The advantage of this embodiment (first embodiment) is that it improves the micro light emitting diode. By vertically stacking the first light emitting semiconductor 32 and the second light emitting semiconductor 34 on the substrate 10, the overall structure forms a new type of micro light emitting diode with two light emitting semiconductors. The structure formed by the vertical stacking reduces the number of connecting electrode lines in the LED by half, thereby achieving the purpose of reducing the number of electrode lines and reducing the overall volume.

[0049] Next, please refer to Figure 3, which is a schematic diagram of the structure of a micro-light emitting diode of a second embodiment of the present invention. As shown in the figure, the connection relationship between the substrate 10, the conductive layer 20, the light emitting component 30 and the conductive bump group 40 listed in this embodiment is the same as that of the previous embodiment, so it will not be repeated here.

[0050] However, in this embodiment, the conductive layer 20 further includes a third electrode 26 and a fourth electrode 28 . The third electrode 26 is disposed on one side of the second electrode 24 , and the fourth electrode 28 is disposed on the other side of the third electrode 26 at intervals.

[0051] In addition, please refer to Figure 3 again. In this embodiment, a third light emitting semiconductor 36 is further included. The third light emitting semiconductor 36 includes a third light emitting element 361, a third N-type electrode 363 and a third P-type electrode 365. One side of the third light emitting element 361 is provided with one end of the third N-type electrode 363 and one end of the third P-type electrode 365, the other end of the third N-type electrode 363 is provided on the fourth electrode 28, and the other end of the third P-type electrode 365 is provided on the third electrode 36.

[0052] In this embodiment, the structure of the third light-emitting element 361 includes the N-type semiconductor 3213 and the P-type semiconductor 3217, the N-type semiconductor 3213 is arranged below a third light-emitting layer 3615, the P-type semiconductor 3217 is arranged above the third light-emitting layer 3615, and the N-type semiconductor 3213 is arranged on the insulating substrate 3211.

[0053] In this embodiment, the light emission wavelength of the third light emitting element 361 is between 300nm and 800nm, and the light emission wavelength of the third light emitting element 361 is different from the light emission wavelength of the first light emitting element 321 and the light emission wavelength of the second light emitting element 341. That is to say, for example: when the wavelength of the first light emitting element 321 is red light (710nm), the wavelength of the second light emitting element 341 will be blue light (470nm), and the wavelength of the third light emitting element 361 will be green light (550nm). There is no state in which two or three light emitting components are the same or all have the same wavelength.

[0054] Among them, during the first time T1 to the fourth time T4, the operation of the first light emitting element 321 of the first light emitting semiconductor 32 and the second light emitting element 341 of the second light emitting semiconductor 34 is the same as that of the first embodiment, and thus will not be described in detail herein.

[0055] The third electrode 26 of the present embodiment transmits a third electrical signal (not shown) of the control signal via the third light emitting semiconductor 36 to the fourth electrode 28, so that the third light emitting semiconductor 36 is continuously electrically turned on. That is to say, the third light emitting element 361 of the third light emitting semiconductor 36 of the present embodiment is in a constant light state from the first time T1 to the fourth time T4. Through this light emitting method, the micro light emitting diode of the present embodiment can effectively highlight the difference between flat RGB pixels.

[0056] The first time T1 to the fourth time T4 is the time for human eyes to produce visual persistence. Traditional visual persistence means that human eyes have a time delay and residue of about 0.01 to 0.1 seconds for objects or moving objects they see, and the preferred visual persistence time is 0.1 seconds.

[0057] In this embodiment, due to the different light wavelengths of the first light emitting element 321 (e.g., red light), the second light emitting element 341 (e.g., green light), and the third light emitting element 361 (e.g., blue light), the visual effect of light on the retina is produced during the visual persistence time, so that the micro-LED received by the user appears as white light.

[0058] The advantage of this embodiment (second embodiment) is that the wavelength of the emitted light source can be controlled by adjusting the light emission wavelengths of the first light emitting element 321, the second light emitting element 341 and the third light emitting element 361. For example, when the first light emitting element 321, the second light emitting element 341 and the third light emitting element 361 are of different colors (for example, the three primary colors of R, G, and B), white light can be formed by a combination of the three colors for subsequent light emission.

[0059] The embodiments described above are micro light emitting diodes of the present invention. The first light emitting semiconductor and the second light emitting semiconductor are vertically stacked on the substrate, so that the overall structure forms a micro light emitting diode with a vertical structure of two light emitting semiconductors. The structure formed by the vertical stacking reduces the number of connecting electrode lines in the LED by half, thereby achieving the purpose of reducing the number of electrode lines and reducing the overall volume.

[0060] The order of execution of each step in the above embodiment does not mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application.

[0061] The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent changes and modifications to the shape, structure, characteristics and spirit described in the claims of the present invention should be included in the scope of the claims of the present invention.

Claims

1. A micro light emitting diode, characterized in that: It contains: a substrate; a conductive layer, comprising a first electrode and a second electrode, wherein the first electrode and the second electrode are disposed on the substrate at intervals; A light-emitting component is disposed above the conductive layer, and the light-emitting component comprises: a first light-emitting semiconductor, comprising a first light-emitting element, a first N-type electrode and a first P-type electrode, wherein one side of the first light-emitting element is disposed above the conductive layer, and the first N-type electrode and the first P-type electrode are disposed on the other side of the first light-emitting element, wherein the first light-emitting element has a first light-emitting layer, and the first light-emitting layer has a first area; and a second light emitting semiconductor vertically disposed above the first light emitting semiconductor, the second light emitting semiconductor comprising a second light emitting element, a second N-type electrode and a second P-type electrode, the second N-type electrode disposed above the first P-type electrode, the second P-type electrode disposed above the first N-type electrode, the second light emitting element disposed above the second P-type electrode and the second N-type electrode, wherein the second light emitting element has a second light emitting layer, the second light emitting layer has a second area, and the first area is larger than the second area; and a conductive bump group, comprising a first conductive bump and a second conductive bump, wherein one end of the first conductive bump is disposed on the first electrode and extends to one side of the first N-type electrode and one side of the second P-type electrode, and one end of the second conductive bump is disposed on the second electrode and extends to one side of the first P-type electrode and one side of the second N-type electrode; Wherein, during a visual persistence time, when any of the first electrode and the second electrode receives a control signal from the conductive layer, it is used to make any of the first light-emitting semiconductor and the second light-emitting semiconductor electrically conductive.

2. The micro light emitting diode according to claim 1, characterized in that: The control signal includes a first electrical signal and a second electrical signal, and the first electrical signal and the second electrical signal are used to electrically conduct the first light-emitting semiconductor and the second light-emitting semiconductor in sequence.

3. The micro light emitting diode according to claim 1, characterized in that: The light emission wavelength of the first light emitting element and the light emission wavelength of the second light emitting element are between 300nm and 800nm.

4. The micro light emitting diode according to claim 1, characterized in that: The light-emitting wavelength of the first light-emitting element and the light-emitting wavelength of the second light-emitting element are different light-emitting wavelengths.

5. The micro light emitting diode according to claim 1, characterized in that: One end of the first conductive bump is electrically connected to the joint of the first N-type semiconductor and the second P-type semiconductor, and the other end of the first conductive bump is electrically connected to the first electrode.

6. The micro light emitting diode according to claim 1, characterized in that: One end of the second conductive bump is electrically connected to the joint of the first P-type semiconductor and the second N-type semiconductor, and the other end of the second conductive bump is electrically connected to the second electrode.

7. The micro light emitting diode according to claim 2, characterized in that: The conductive layer further includes a third electrode and a fourth electrode. The third electrode is arranged on one side of the second electrode, and the fourth electrode is arranged on the other side of the third electrode with a gap.

8. The micro light emitting diode according to claim 7, characterized in that: It further includes a third light-emitting semiconductor, which includes a third light-emitting element, a third N-type electrode and a third P-type electrode. One end of the third N-type electrode and one end of the third P-type electrode are arranged on one side of the third light-emitting element, the other end of the third N-type electrode is arranged on the fourth electrode, and the other end of the third P-type electrode is arranged on the third electrode. The third electrode transmits a third electrical signal of the control signal through the third light-emitting semiconductor to the fourth electrode, so that the third light-emitting semiconductor is continuously electrically conductive.

9. The micro light emitting diode according to claim 8, characterized in that: The light emission wavelength of the third light emitting element is between 300nm and 800nm, and the light emission wavelength of the third light emitting element is different from the light emission wavelength of the first light emitting element and the light emission wavelength of the second light emitting element.

10. The micro light emitting diode according to claim 8, characterized in that: The first light-emitting element, the second light-emitting element and the third light-emitting element respectively include an N-type semiconductor and a P-type semiconductor, the N-type semiconductor is respectively arranged below the first light-emitting layer, the second light-emitting layer and the third light-emitting layer, the P-type semiconductor is respectively arranged above the first light-emitting layer, the second light-emitting layer and the third light-emitting layer, and the N-type semiconductor is arranged on an insulating substrate.

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