Wafer measuring method, cleaning method, cleaning device, electronic equipment and storage medium

Abstract

The invention discloses a wafer measuring method, a wafer cleaning method, a wafer cleaning device, electronic equipment and a storage medium. The wafer cleaning device comprises a measuring assembly which is used for measuring initial measuring parameters and actual measuring parameters of a reference wafer; the reference assembly is used for measuring an initial ranging parameter, and measuring an actual ranging parameter of the reference wafer when the reference wafer is tripped into the groove of the driven wheel and meets a ranging condition; the adjusting assembly adjusts the relative position of the driving supporting structure according to the actual insertion amount to enable the actual insertion amount to meet a preset threshold value; the driving support structure is used for vertically supporting and driving the wafer to rotate; and the cleaning brush scrubs the front and back surfaces of the wafer. According to the invention, the depth of the wafer falling into the groove of the driven wheel can be accurately measured, the insertion depth of the reference wafer is obtained, and the position of the driven wheel is adjusted according to the preset threshold value of the insertion amount, so that the to-be-cleaned wafer of the same type as the reference wafer can be exactly inserted into the groove of the driven wheel, the rotating speed is not influenced, and the cleaning effect of the wafer is ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer cleaning, and in particular to a wafer measuring method, a cleaning method, a cleaning device, an electronic device and a storage medium. Background Art

[0002] The integrated circuit industry is the core of the information technology industry and plays a key role in promoting the transformation and upgrading of the manufacturing industry towards digitalization and intelligence. Chips are the carriers of integrated circuits, and chip manufacturing involves chip design, wafer manufacturing, wafer processing, electrical measurement, cutting packaging and testing.

[0003] Wafer cleaning is a very critical part of the chip manufacturing process. It is mainly used to remove pollutants and impurities on the surface of the wafer to ensure the quality and reliability of subsequent processes. Wafers will undergo multiple cleanings during the manufacturing process, and the effect of cleaning directly affects the performance and yield of the chip. The purpose of wafer cleaning is to remove particulate matter, organic pollutants and metal impurities on the surface of the wafer. There may be tiny particles on the surface of the wafer. If they are not removed, these particles may cause defects in the subsequent photolithography and etching processes and affect the formation of the circuit; organic matter such as photoresist residues and grease will affect the deposition and etching processes of the film and need to be removed during the cleaning process; there may be metal ion contamination during the manufacturing process. Metal impurities may cause the electrical performance of the device to deteriorate and need to be removed during cleaning.

[0004] Wet cleaning is the most common cleaning method, which is to use chemical solutions to clean the wafer. In the wet cleaning process, the clamping of the wafer usually includes mechanical clamping, rotating roller brush clamping, contactless clamping and adsorption clamping. Among them, roller brush cleaning is widely used, but there are also some problems. For example, in the existing vertical cleaning chamber, due to the different thickness of the wafer, there are roughly 0.75mm, 0.85mm and 1.00mm specifications. There are processing errors in the thickness of wafers of various specifications. Each wafer needs to be inserted into the groove of the driven wheel to a certain depth, and the driven wheel is driven to rotate by friction. However, the insertion amount of the wafer in the driven wheel groove cannot be kept constant; when the wafer is inserted too deep into the driven wheel wafer positioning groove, it affects the actual rotation speed of the wafer. When the insertion is too shallow, it will cause the speed measurement to fail. Therefore, the insertion amount of the wafer in the driven wheel plays an important role in the design of the shaft system and the stable operation of the speed measurement shaft system. However, the prior art cannot ensure that the insertion amount of the wafer in the driven wheel remains constant; in addition, when the wafer enters the cleaning chamber, the wafer may tilt, resulting in a virtual connection between the wafer and the driving wheel, affecting the speed measurement accuracy. Summary of the invention

[0005] Therefore, the purpose of the present invention is to solve the problem of wafers being inserted too deeply or too shallowly in the prior art, and to provide a wafer measurement method, which uses the insertion amount of the reference wafer as an adjustment parameter of the driven wheel when the supporting force of the driven wheel on the reference wafer is balanced with the gravity of the reference wafer; and to provide a cleaning method, a cleaning device, an electronic device and a storage medium.

[0006] In order to achieve the above object, the present invention provides a wafer measurement method, comprising:

[0007] Place a reference wafer of the same model as the wafer to be cleaned on the measurement component and the reference component respectively, and obtain the initial measurement parameter F1 and initial distance measurement parameter of the reference wafer;

[0008] The reference wafer is clamped by a measuring assembly, and the orientation block is installed at a specific position of the reference wafer. The reference wafer is clamped and slowly lowered vertically, and the orientation block sinks into the auxiliary detection groove of the driven wheel to obtain the actual measurement parameter F2 of the reference wafer at this time;

[0009] When the reference wafer contacts the wafer positioning groove of the driven wheel, it contacts the driving wheel synchronously and continues to lower the reference wafer, causing the driving wheel to produce flexible deformation. When the measurement parameter shows the difference between the actual measurement parameter F2 and the initial measurement parameter F1, the descent stops.

[0010] The actual distance measurement parameters of the reference wafer are obtained, and the actual insertion amount is calculated according to the actual distance measurement parameters and the initial distance measurement parameters.

[0011] Further preferably, the obtaining of the initial measurement parameters of the reference wafer comprises the following steps:

[0012] The reference wafer is clamped on the measurement component, and the measurement component is turned upside down, and the reading of the sensor is recorded as the initial measurement parameter of the reference wafer.

[0013] Further preferably, the method further includes obtaining a distance from a calibration point on the reference wafer to a frame of the reference component as an initial distance measurement parameter, including:

[0014] Install the reference wafer in the reference block of the reference assembly, keeping the reference wafer vertical without flipping;

[0015] The distance measuring device is placed at the calibration point of the reference wafer, and the distance from the calibration point to the tangent point between the reference wafer and the lower edge of the reference block is obtained as the initial distance measuring parameter.

[0016] Further preferably, the obtaining of the actual measurement parameter F2 of the reference wafer at this time includes:

[0017] Installing the distance measuring device on the reference wafer, installing the orientation block at a specific position below the reference wafer, and connecting the reference wafer to the reference wafer clamping plate;

[0018] Tightly connect the measuring frame, the displacement platform, the floating joint, the first sensor, and the reference wafer clamping plate, and fix the measuring frame on the cleaning box to ensure that the reference wafer is located in the center of the box;

[0019] The displacement platform is adjusted so that the reference wafer is slowly lowered vertically, and the orientation block is sunk into the auxiliary detection groove of the driven wheel to obtain the actual measurement parameter F2 of the reference wafer at this time.

[0020] The present invention also provides a wafer cleaning method, comprising adopting the steps of the above wafer measurement method to obtain the actual insertion amount of the reference wafer;

[0021] Adjusting the relative positions of the driving wheel and the driven wheel in the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold value;

[0022] Placing the wafer to be cleaned on a driving support structure formed by a driving wheel and a driven wheel;

[0023] The driven wheel is kept in the adjusted position, and the cleaning brushes on both sides of the wafer are moved to the cleaning position;

[0024] The driving wheel is controlled to rotate at a preset speed to perform roller brush cleaning on both sides of the wafer.

[0025] The present invention also provides a wafer cleaning device, comprising:

[0026] A measurement component, used for measuring an initial measurement parameter F1 and an actual measurement parameter F2 of a reference wafer;

[0027] The reference component measures the initial distance measurement parameters when the reference wafer maintains the reference state; when the reference wafer is lowered into the wafer positioning groove of the driven wheel to meet the distance measurement conditions, the actual distance measurement parameters of the reference wafer are measured;

[0028] An adjustment component adjusts the relative position of the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold value;

[0029] A driving support structure vertically supports and drives the reference wafer or the wafer to be cleaned to rotate;

[0030] Cleaning brush, used to clean the front and back sides of the wafer to be cleaned.

[0031] Further preferably, the measurement assembly includes a measurement frame, a displacement platform, a floating joint, a reference wafer clamping plate and a first sensor connected in sequence;

[0032] The measuring frame can be detachably mounted on the cleaning box. When measuring the initial measurement parameter F1 of the reference wafer, the measuring frame is inverted; when measuring the actual measurement parameter F2, the measuring frame is mounted on the cleaning box.

[0033] The displacement platform is used to slowly adjust the distance of the reference wafer into the driven wheel wafer positioning groove to meet the distance measurement condition.

[0034] Further preferably, the distance measurement condition is to obtain the actual distance measurement parameter of the reference wafer when the value collected by the first sensor is the difference F2-F1 between the actual measurement parameter and the initial measurement parameter.

[0035] Further preferably, the reference component comprises:

[0036] A reference block is used to keep the reference wafer vertical without flipping;

[0037] The distance measuring device obtains the distance from the calibration point to the tangent point of the lower edge of the reference wafer and the reference block as the initial distance measuring parameter.

[0038] Further preferably, the distance measuring device is fixed to a calibration point of the reference wafer through a sensor fixing block.

[0039] Further preferably, an orientation block is provided below the distance measuring device, and the orientation block is installed at a specific position of the reference wafer. When the clamped reference wafer is slowly lowered vertically, the orientation block sinks into the auxiliary detection groove of the driven wheel to obtain the actual measurement parameter F2 of the reference wafer at this time.

[0040] Further preferably, the adjustment component comprises:

[0041] Three-wheel mounting plate for mounting two driving wheels and adjusting the platform;

[0042] The adjusting platform is used for installing the driven wheel and adjusting the position of the driven wheel.

[0043] The present invention also provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above-mentioned wafer cleaning method when executing the computer program.

[0044] The present invention also provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the wafer cleaning method as described above are implemented.

[0045] The wafer measurement correction, cleaning method and cleaning device disclosed in the present application have at least the following advantages over the prior art:

[0046] The present invention can accurately measure the depth of the wafer into the driven wheel wafer positioning groove by using the measurement component and the reference component to cooperate. By obtaining the insertion depth of the reference wafer, the position of the driven wheel is adjusted according to the preset threshold of the insertion amount, so that the wafer to be cleaned of the same type as the reference wafer can be just inserted into the wafer positioning groove of the driven wheel. If the insertion amount of the wafer in the driven wheel wafer positioning groove is inaccurate, it may cause the rotation speed deviation of the wafer during the cleaning process, thereby affecting the cleaning effect. The present application can accurately calculate the actual insertion amount of the wafer by obtaining the initial measurement parameters and actual ranging parameters of the reference wafer and the reference wafer, ensuring the consistency and accuracy of the insertion depth; avoiding the situation where the wafer is inserted too deep or too shallow, helping to maintain a stable rotation speed of the wafer during the cleaning process, thereby improving the uniformity and thoroughness of the wafer surface cleaning. This is crucial to ensure that there is no residual particulate matter, inorganic pollutants and metal impurities on the wafer surface, thereby ensuring the quality of subsequent processes such as lithography and etching.

[0047] When measuring the depth of the wafer inserted into the wafer positioning groove of the driven wheel, the present application calculates the difference between the tensile and pressure readings of the wafer measured twice as an important condition for determining whether to measure the distance. This is more accurate than observation based on experience, and can ensure that the depth of the wafer inserted is not too shallow, affecting the cleaning effect, nor too deep, affecting the rotation speed.

[0048] This application uses a displacement platform and a floating joint in the process of lowering the wafer, which can effectively reduce the adverse effects such as virtual contact with a certain drive wheel caused by the tilt of the wafer in the cleaning chamber. This method ensures good contact between the wafer and the drive wheel by accurately controlling the clamping and insertion process of the reference wafer, avoiding the occurrence of virtual contact. This not only helps to improve the speed control accuracy of the wafer, but also improves the overall stability and reliability of the cleaning process, and reduces quality fluctuations caused by unstable equipment operation.

[0049] Due to the processing errors in the thickness of wafers of different specifications, these errors can easily lead to inconsistent cleaning effects during the cleaning process, thereby affecting the performance of different wafers. This application can effectively eliminate the differences in cleaning effects caused by thickness errors by measuring and correcting the actual insertion amount of the reference wafer; ensuring the same insertion depth and cleaning state of each wafer during the cleaning process can significantly improve the yield rate of the product. This is of great advantage for manufacturing high-quality, stable performance chip products. In addition, a consistent cleaning process also reduces the variability in subsequent process steps, further improving the reliability of the overall manufacturing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 A schematic flow chart of a wafer measurement method provided in Example 1 of the present invention.

[0051] Figure 2 A schematic flow chart of the wafer cleaning method provided in Example 1 of the present invention.

[0052] Figure 3 This is a schematic diagram of the structure of the reference component in the wafer cleaning device provided in Example 2 of the present invention.

[0053] Figure 4 This is a schematic diagram of the structure of the measurement component in the wafer cleaning device provided in Example 2 of the present invention.

[0054] Figure 5 This is a schematic diagram of the structure of the adjustment component in the wafer cleaning device provided in Example 2 of the present invention.

[0055] Figure 6 A schematic structural diagram of a wafer cleaning device provided in Embodiment 2 of the present invention;

[0056] Figure 7 A schematic diagram of an orienting block sinking into an auxiliary detection groove provided by an embodiment of the present invention.

[0057] In the figure:

[0058] 1-reference wafer; 2-reference block; 3-sensor fixing block; 4-distance measuring device; 5-anti-tilt fixing block; 101-measuring frame; 102-displacement platform; 103-floating joint; 104-first sensor; 105-reference wafer clamping plate; 106-driving wheel gasket; 107-driving wheel; 108-orientation block; 109-wafer positioning groove; 110-driven wheel; 111-cleaning box; 112-cleaning brush; 113-three-wheel mounting plate; 114-adjusting platform; 115-detection auxiliary groove. DETAILED DESCRIPTION

[0059] The present invention is further described in detail below through the accompanying drawings and specific embodiments.

[0060] Embodiment 1, as Figure 1 As shown, an embodiment of the present invention provides a wafer measurement method, comprising the following steps:

[0061] S1, placing a reference wafer of the same model as the wafer to be cleaned on the measurement component and the reference component respectively, and obtaining an initial measurement parameter F1 and an initial distance measurement parameter of the reference wafer;

[0062] In S1, the step of obtaining initial measurement parameters of the reference wafer includes the following steps:

[0063] The reference wafer is clamped on the measurement component, and the measurement component is turned upside down, and the reading of the sensor is recorded as the initial measurement parameter of the reference wafer.

[0064] Further preferably, the method further includes obtaining a distance from a calibration point on the reference wafer to a frame of the reference component as an initial distance measurement parameter, including:

[0065] Install the reference wafer in the reference block of the reference assembly, keeping the reference wafer vertical without flipping;

[0066] The distance measuring device is placed at the calibration point of the reference wafer, and the distance from the calibration point to the tangent point between the reference wafer and the lower edge of the reference block is obtained as the initial distance measuring parameter.

[0067] Specifically, the laser distance sensor 4 is first installed on the sensor fixing block 3, and then the sensor fixing block 3 is fixed on the reference wafer 1; finally, the reference wafer 1 is connected to the anti-tilt fixing block 5 and placed on the reference block 2. The laser speed sensor 4 and the sensor fixing block 3, the sensor fixing block 3 and the reference wafer 1, the reference wafer 1 and the anti-tilt fixing block 5, and the anti-tilt fixing block 5 and the reference block 2 are all fastened by positioning pins and screws to ensure that the laser falls on the reference block 2 vertically without deviation or rotation; at the same time, the inner wall of the reference block 2 needs to be processed with an inner groove to allow the reference wafer 1 to slide in and limit its forward and backward shaking, and the laser distance sensor reading L1 is read at this time.

[0068] It should also be noted that a groove is provided on the reference wafer clamping plate 105, with a groove width of 0.8-1.5 mm and a groove depth of 1-3 mm, so as to facilitate the placement of the wafer to be tested / reference wafer; the material of the reference wafer clamping plate 105 should be a high cleanliness material, such as PPS / PEEK;

[0069] S2, use the measuring assembly to clamp the reference wafer, install the orientation block 108 at a specific position of the reference wafer, clamp the reference wafer and slowly lower it vertically, and the orientation block 108 sinks into the detection auxiliary groove 115 of the driven wheel 110 ( Figure 7 ), obtaining the actual measurement parameter F2 of the reference wafer at this time;

[0070] When obtaining the actual measurement parameter F2 of the reference wafer, it includes:

[0071] The distance measuring device (including the laser distance measuring sensor 4 and the sensor fixing block 3) is installed on the reference wafer 1 through positioning pins and bolts, and the orientation block 108 is installed on the lower end of the tooling wafer through positioning pins and bolts. At the same time, the reference wafer 1 is installed and connected to the reference wafer clamp 105 through positioning pins and bolts; then the measuring frame 101, the displacement platform 102, the floating joint 103, the tension and pressure sensor 104, and the reference wafer clamp 105 are connected through fasteners, and then the measuring frame 101 is fixed to the cleaning box with positioning pins and bolts to ensure that the entire device is located in the center of the box without deviation.

[0072] like Figure 7As shown, at this time, the reference wafer has no contact with the driving wheel gasket 106 and the driven wheel 110, and the orientation block 108 sinks into the detection auxiliary groove 115 of the driven wheel 110. The two are clearance-matched, and a single-sided clearance of 0.5 to 1.0 mm is recommended to prevent the driven wheel from rotating during the measurement process and affecting the data. At this time, read the reading F2 (tooling weight) of the pull pressure sensor.

[0073] S3, when the reference wafer contacts the wafer positioning groove 109 of the driven wheel, it contacts the driving wheel 107 synchronously, and continues to lower the reference wafer, so that the driving wheel gasket 106 produces flexible deformation, and stops lowering when the measurement parameter shows the difference F2-F1 between the actual measurement parameter F2 and the initial measurement parameter F1;

[0074] During this process, ensure that the protrusion of the orientation block 108 extends into the detection auxiliary groove 115 of the driven wheel 110, adjust the displacement platform 102, so that the reference wafer 1 slowly moves downward, and use the floating joint 103 to effectively reduce the adverse effects such as virtual contact with a certain driving wheel gasket 106 caused by the tilt of the reference wafer 1. This moving process moves the reference wafer 1 vertically downward, and is equivalent to the wafer descending in the chamber;

[0075] When the reading of the pulling pressure sensor 104 is equal to F2-F1, the reference wafer 1 stops descending. This state is equivalent to the end of the wafer being placed in the wafer positioning groove 109 of the dyeing driven wheel. The displacement platform 102 is made of non-metal. If coarse adjustment devices such as screws are used, slight vibration and tilting will occur during the downward movement of the reference wafer 1, and it is easy to produce adverse effects such as metal debris contaminating the box 111.

[0076] S4, obtaining actual distance measurement parameters of the reference wafer, and calculating an actual insertion amount according to the actual distance measurement parameters and the initial distance measurement parameters;

[0077] The method further includes S5, adjusting the relative position of the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold.

[0078] During the wafer cleaning process, the insertion depth of the wafer is crucial to the cleaning effect. If the insertion amount of the wafer in the groove of the driven wheel is inaccurate, it may cause the rotation speed deviation of the wafer during the cleaning process, thereby affecting the cleaning effect. The measurement method proposed in this application can accurately calculate the actual insertion amount of the wafer by obtaining the initial measurement parameters and actual ranging parameters of the reference wafer and the reference wafer, thereby ensuring the consistency and accuracy of the insertion depth. This precise insertion control avoids the situation where the wafer is inserted too deep or too shallow, helps to maintain a stable rotation speed of the wafer during the cleaning process, and thus improves the uniformity and thoroughness of the wafer surface cleaning. This is crucial to ensure that there are no residual particulate matter, inorganic pollutants and metal impurities on the wafer surface, thereby ensuring the quality of subsequent processes such as lithography and etching.

[0079] When the wafer enters the cleaning chamber, due to thickness differences or improper mechanical clamping, the wafer may tilt or be in virtual contact with the drive wheel. These problems not only affect the actual cleaning effect of the wafer, but may also cause inaccurate speed measurement, thereby affecting the stability of the entire cleaning process. By measuring and correcting the actual insertion amount of the reference wafer, the difference in cleaning effect caused by thickness error can be effectively eliminated; ensuring the same insertion depth and cleaning state of each wafer during the cleaning process can significantly improve the product yield. This is of great advantage for manufacturing high-quality, stable performance chip products.

[0080] In the traditional wafer cleaning process, operators need to adjust the wafer insertion depth based on experience, which is not only time-consuming but also prone to errors. However, through precise measurement and automated correction, this application makes this process simpler and more efficient.

[0081] In addition, this method effectively reduces errors caused by improper manual operation through measurement and feedback mechanisms. This not only shortens the operation time and reduces the frequency of equipment commissioning, but also reduces the dependence on the operator's technical level, and improves production efficiency overall. At the same time, the simplified operation process also helps to reduce human errors and improve the operation stability of the equipment and the consistency of the cleaning effect.

[0082] Embodiment 2, as Figure 2 As shown, the present invention also provides a wafer cleaning method, comprising:

[0083] S21, obtaining the actual insertion amount of the reference wafer using the steps of the wafer measurement method;

[0084] S22, adjusting the relative positions of the driving wheel and the driven wheel in the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold;

[0085] S23, placing the wafer to be cleaned on a driving support structure formed by a driving wheel and a driven wheel;

[0086] S24, keeping the driven wheel at the adjusted position, and moving the cleaning brushes on both sides of the wafer to the cleaning position;

[0087] S25, controlling the driving wheel to rotate at a preset speed to perform roller brush cleaning on both the front and back sides of the wafer.

[0088] Embodiment 3, as Figure 3-6 As shown, the present invention also provides a wafer cleaning device, comprising:

[0089] The measurement component is used to measure the initial measurement parameter F1 and the actual measurement parameter F2 of the reference wafer 1; wherein, Figure 3As shown, the measuring assembly includes a measuring frame 101, a displacement platform 102, a floating joint 103, a reference wafer clamp 105 and a first sensor 104 which are connected in sequence; wherein the first sensor 104 is a tension pressure sensor. When measuring the initial measurement parameter F1 of the reference wafer 1, the reference wafer 1 is clamped by the reference wafer clamp 105 and placed on the tension pressure sensor. At this time, the measuring frame 101 is inverted with a flat bottom for easy placement. At this time, the reading of the tension pressure sensor is the deadweight F1 of the wafer clamp and the reference wafer.

[0090] When obtaining the actual measurement parameter F2, the measuring rack 101 is fixed on the side wall of the cleaning box, and the indication F2 of the tension pressure sensor is read. The reading of the tension pressure sensor is the combined force of the gravity of the wafer clamp and the reference wafer and the pressure of the measuring rack.

[0091] The distance from the displacement platform 102 to the reference wafer 1 entering the wafer positioning groove 109 is adjusted to meet the distance measurement condition.

[0092] The distance measurement condition is that when the value collected by the first sensor 104 is the difference F2-F1 between the actual measurement parameter and the initial measurement parameter, the actual distance measurement parameter of the reference wafer 1 is obtained.

[0093] When adjusting the displacement platform 102, after the reference wafer 1 is lowered into the groove of the driven wheel 110, the upward support force of the driven wheel groove is obtained. When the value collected by the first sensor 104 is the difference between the actual measurement parameter and the initial measurement parameter, it means that the support force of the driven wheel groove is equal to the weight of the wafer itself. It can ensure that the lowering depth of the wafer is not too shallow, which affects the cleaning effect, nor too deep, which affects the rotation speed.

[0094] The reference assembly measures the initial distance measurement parameters when the reference wafer 1 maintains the reference state; when the reference wafer 1 is lowered into the wafer positioning groove 109 of the driven wheel 110 and meets the distance measurement conditions, the actual distance measurement parameters of the reference wafer 1 are measured;

[0095] like Figure 4 As shown, the reference assembly includes: a reference block 2, which is used to keep the reference wafer 1 vertical without flipping; a distance measuring device 4, which obtains the distance from the calibration point to the tangent point between the reference wafer 1 and the lower edge of the reference block 2 as the initial distance measuring parameter. It further includes an anti-tilt fixed block 5, and the reference wafer 1 is installed in the reference block 2 through the anti-tilt block 5 to maintain a vertical state without tilting / flipping, wherein the reference block 2 has grooves with a width of 0.75mm and a depth of 1 to 3mm on both sides; to ensure that the sensor light is vertical without tilt; at this time, the laser distance sensor indication L1 is read. The distance measuring device is fixed to the calibration point of the reference wafer through a fixed block.

[0096] The design of the reference assembly allows the reference wafer to remain vertical without flipping, ensuring the accuracy of the distance measurement device when measuring the initial distance measurement parameters. Through this precise distance measurement, the device can better control the depth of the wafer, avoid poor cleaning results caused by wafer tilt or position deviation, and further improve the uniformity and reliability of cleaning.

[0097] An orientation block 108 is provided below the distance measuring device. The orientation block 108 is installed at a specific position of the reference wafer. When the clamped reference wafer is slowly lowered vertically, the orientation block 108 sinks into the detection auxiliary groove 115 of the driven wheel 110 to obtain the actual measurement parameter F2 of the reference wafer at this time; when measuring the actual measurement parameter F2, the protrusion of the orientation block 108 extends into the groove of the driven wheel and slowly moves down with the displacement platform. The orientation block 108 has a self-balancing function, which can prevent the reference wafer from tilting in the left and right directions, and ensure that the signal sent by the laser sensor 4 is vertically downward. That is, adjust the manual displacement platform (recommended step unit 0.01mm) to make the tooling slowly descend vertically. Due to the setting of the floating joint, the tooling wafer can be prevented from contacting the single-sided driving wheel during the descent process; during the descent process, the tooling wafer first contacts the driven wheel dyeing Washer and is inserted into the gap, and the laser falls on the outer edge of the driven wheel dyeing Washer; then it contacts the two driving wheel Washers at the same time, at this time the pull pressure sensor reading decreases, and the tooling wafer is continuously lowered, pressing down the two driving wheel Washers to produce flexible deformation, and continuously inserting it into the groove of the driven wheel dyeing Washer, and stopping the descent when the pull pressure sensor reading is equal to F2-F1. This process is equivalent to the robot arm placing the wafer and the actual wafer sliding into the groove of the driven wheel Washer by its own weight; at this time, read the laser sensor reading L2, and the actual insertion amount is |L2-L1|.

[0098] It should be noted that the orienting block 108 can be set as a T-shaped structure with a central protrusion, and support frames are set on both sides. The support frames are used to support the orienting block body to a certain height to ensure that the central protrusion can fall exactly into the groove of the driven wheel.

[0099] The orientation block 108 assists in ensuring the accuracy of the insertion depth. When measuring the actual measurement parameter F2, the orientation block 108 extends into the detection auxiliary groove 115 of the driven wheel 110 through the protrusion, and slowly moves down with the displacement platform. This design ensures that the insertion depth of the wafer meets the distance measurement conditions, avoids the insertion of too deep or too shallow, improves the control accuracy during the cleaning process, and reduces the occurrence of errors.

[0100] When the distance measurement conditions are met, the actual distance measurement parameters of the reference wafer 1 are measured; see Figure 6At this time, the laser sensor landing point should be at the upper edge of the driven wheel groove. The laser landing point can be easily reflected and received to display the indication L2. The difference between the indication L2 and the indication L1 is calculated, which is the actual insertion depth of the wafer in the wafer positioning groove 109.

[0101] The adjustment component adjusts the relative position of the driving support structure according to the actual insertion amount so that the actual insertion amount meets the preset threshold value; Figure 5 As shown, the adjustment assembly includes: a three-wheel mounting plate 113 for mounting two driving wheels and an adjustment platform; an adjustment platform 114 for mounting a driven wheel 110 and adjusting the position of the driven wheel 110 .

[0102] A driving support structure vertically supports and drives the reference wafer or the wafer to be cleaned to rotate;

[0103] The cleaning brush 112 cleans the front and back sides of the wafer to be cleaned.

[0104] The design of the adjustment component enables the cleaning device to have good dynamic adjustment capabilities. The relative position of the driving support structure is adjusted according to the actual insertion amount to ensure that the actual insertion amount meets the preset threshold. This flexible adjustment function enables the cleaning device to adapt to wafers of different thicknesses and specifications, enhancing the applicability and process flexibility of the device and adapting to diverse production needs.

[0105] After measurement by the above-mentioned measuring device, the position of the driven wheel is adjusted according to the measurement result. When a wafer of the same model as the reference wafer needs to be cleaned, the wafer to be cleaned is directly placed on the driving support assembly and the front and back sides are cleaned using a cleaning brush.

[0106] The device integrates multiple measurement and adjustment functions with a high degree of automation. Through precise measurement and automatic adjustment, operators only need to perform simple operations to complete the cleaning process, which greatly reduces the dependence on manual operation, reduces human errors, and improves the automation level and efficiency of the production line.

[0107] It should be noted that when using the reference wafer to measure the wafer insertion depth, the wafer is not cleaned. If the wafer insertion depth of the same batch of wafers is measured once and an abnormality is found, an early warning is issued so that the on-site process personnel can adjust the speed measuring wheel (driven wheel). When used on-site, the wafer insertion depth can be measured regularly.

[0108] The wafer measurement correction, cleaning method and measurement device disclosed in the present application have at least the following advantages over the prior art:

[0109] The present invention can accurately measure the depth of the wafer inserted into the groove of the driven wheel by adopting a measuring component and a reference component in combination. By obtaining the insertion depth of the reference wafer and adjusting the position of the driven wheel according to a preset threshold of the insertion amount, the wafer to be cleaned of the same type as the reference wafer can be exactly inserted into the groove of the driven wheel without affecting the rotation speed, thereby ensuring the cleaning effect of the wafer.

[0110] When measuring the depth of the wafer inserted into the groove of the driven wheel, the present application calculates the difference between the tensile and pressure readings of the wafer measured twice as an important condition for determining whether to measure the distance. This is more accurate than observation based on experience, and can ensure that the depth of the wafer inserted is not too shallow, affecting the cleaning effect, nor too deep, affecting the rotation speed.

[0111] The present application uses a displacement platform and a floating joint in combination during the wafer lowering process, which can effectively reduce adverse effects such as virtual contact with a driving wheel caused by the tilt of the reference wafer.

[0112] Obviously, the above embodiments are only examples for clear explanation, and are not intended to limit the implementation methods. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived from them are still within the protection scope of the invention.

Claims

1. A wafer measurement method, characterized in that: include: Place a reference wafer of the same model as the wafer to be cleaned on the measurement assembly and the reference assembly respectively, and obtain the initial measurement parameter F1 and initial distance measurement parameter of the reference wafer; The reference wafer is clamped by a measuring assembly, and the orientation block is installed at a specific position on the reference wafer. The reference wafer is clamped and slowly lowered vertically. When the orientation block sinks into the auxiliary detection groove of the driven wheel, the actual measurement parameter F2 of the reference wafer at this time is obtained; When the reference wafer contacts the wafer positioning groove of the driven wheel, it contacts the driving wheel synchronously and continues to lower the reference wafer, causing the driving wheel washer to produce flexible deformation. When the measurement parameter shows the difference between the actual measurement parameter F2 and the initial measurement parameter F1, the lowering stops; The actual distance measurement parameters of the reference wafer are obtained, and the actual insertion amount is calculated according to the actual distance measurement parameters and the initial distance measurement parameters.

2. The wafer measurement method according to claim 1, wherein: The method of obtaining the initial measurement parameters of the reference wafer includes the following steps: The reference wafer is clamped on the measurement component, and the measurement component is turned upside down, and the reading of the sensor is recorded as the initial measurement parameter of the reference wafer.

3. The wafer measurement method according to claim 1, wherein: It also includes obtaining the distance from the calibration point on the reference wafer to the reference component frame as the initial distance measurement parameter, including: Install the reference wafer in the reference block of the reference assembly, keeping the reference wafer vertical and without flipping; Place the distance measuring device at the calibration point of the reference wafer, and obtain the distance from the calibration point to the tangent point between the reference wafer and the lower edge of the reference block as the initial distance measurement parameter.

4. The wafer measurement method according to claim 2, wherein: The step of obtaining the actual measurement parameter F2 of the reference wafer at this time includes: Installing the distance measuring device on the reference wafer, installing the orientation block at a specific position below the reference wafer, and connecting the reference wafer to the reference wafer clamping plate; Fasten the measuring frame, displacement platform, floating joint, first sensor, and reference wafer clamping plate, and fix the measuring frame to the cleaning box, ensuring that the reference wafer is located in the center of the box; The displacement platform is adjusted to allow the reference wafer to be lowered vertically and slowly. When the orientation block sinks into the auxiliary detection groove of the driven wheel, the actual measurement parameter F2 of the reference wafer at this time is obtained.

5. A wafer cleaning method, characterized in that: include: Obtaining the actual insertion amount of the reference wafer using the steps of the wafer measurement method according to any one of claims 1 to 4 above; Adjusting the relative positions of the driving wheel and the driven wheel in the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold; Placing the wafer to be cleaned on the driving support structure formed by the driving wheel and the driven wheel; Keep the driven wheel in the adjusted position and move the cleaning brushes on both sides of the wafer to the cleaning position; The driving wheel is controlled to rotate at a preset speed to perform roller brush cleaning on both sides of the wafer.

6. A wafer cleaning device, characterized in that: include: A measurement component, used to measure an initial measurement parameter F1 and an actual measurement parameter F2 of a reference wafer; a reference assembly for measuring initial ranging parameters while the reference wafer maintains a reference state; When the reference wafer is lowered into the groove of the driven wheel and the distance measurement condition is met, the actual distance measurement parameters of the reference wafer are measured; An adjustment component adjusts the relative position of the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold; Drive support structure, vertically support and drive the wafer to be cleaned to rotate; Cleaning brush, used to clean the front and back sides of the wafer to be cleaned.

7. The wafer cleaning device according to claim 6, characterized in that: The measurement assembly includes a measurement frame, a displacement platform, a floating joint, a reference wafer clamping plate and a first sensor connected in sequence; The measuring frame is detachably mounted on the cleaning box, and when measuring the initial measurement parameter F1 of the reference wafer, the measuring frame is inverted; When measuring the actual measurement parameter F2, the measuring frame is installed in the cleaning box; The displacement platform is used to slowly adjust the distance that the reference wafer is lowered into the groove of the driven wheel to meet the distance measurement conditions.

8. The wafer cleaning device according to claim 6 or 7, characterized in that: The distance measurement condition is to obtain the actual distance measurement parameter of the reference wafer when the value collected by the first sensor is the difference between the actual measurement parameter and the initial measurement parameter.

9. The wafer cleaning device according to claim 6 or 7, characterized in that: The benchmark components include: A reference block is used to keep the reference wafer vertical and without flipping; The distance measuring device obtains the distance from the calibration point to the tangent point between the lower edge of the reference wafer and the reference block as the initial distance measurement parameter.

10. The wafer cleaning device according to claim 9, wherein: The distance measuring device is fixed to a calibration point of the reference wafer through a sensor fixing block.

11. The wafer cleaning device according to claim 9, wherein: An orientation block is provided below the distance measuring device and is installed at a specific position of the reference wafer. When the reference wafer is clamped and slowly lowered vertically, the orientation block sinks into the auxiliary detection groove of the driven wheel, and the actual measurement parameter F2 of the reference wafer at this time is obtained.

12. The wafer cleaning device according to claim 6 or 7, characterized in that: The adjustment component includes: Three-wheel mounting plate for mounting two driving wheels and adjusting the platform; The adjusting platform is used for installing the driven wheel and adjusting the position of the driven wheel.

13. An electronic device, characterized in that: The method comprises a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the steps of the wafer cleaning method according to claim 5 are implemented when the processor executes the computer program.

14. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the wafer cleaning method according to claim 5 are implemented.

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