Wafer correction device and control method

Abstract

The invention relates to the technical field of wafer processing, in particular to a wafer correcting device which comprises a base, a stretching unit and a controller, the base comprises a material placing plane, the material placing plane is configured to be used for placing a wafer, and therefore the base needs to be installed on a horizontal plane, and the material placing plane also needs to be parallel to the horizontal plane. According to the wafer correction device, through the stretching unit which is arranged in the base and comprises the adsorption assembly capable of moving in the vertical direction and the vacuum generator communicated with the adsorption assembly, direct correction of the warped part of the wafer is realized; the problem that in the prior art, wafer warping cannot be completely eliminated only through material improvement, technological parameter adjustment and equipment adjustment is effectively solved, the adsorption assembly can be controlled to vertically move, so that the warping area can be accurately corrected, dynamic adjustment of the negative pressure environment is achieved through connection of the controller and the vacuum generator, and the wafer warping degree is improved. Therefore, the device can dynamically correct the warped wafer in the semiconductor manufacturing process.

Description

Technical Field

[0001] The invention relates to wafer processing, and in particular to a wafer correction device. Background Art

[0002] Wafers play an extremely important role in the semiconductor manufacturing process, and their surface flatness is crucial to the success of multiple process steps. Since wafer warp is a common phenomenon in semiconductor manufacturing, it affects multiple process links such as lithography, chemical mechanical planarization (CMP), ion implantation, etching, packaging and testing. Slight warping on the wafer surface may cause many problems, such as alignment errors, uneven material removal, uneven doping distribution, uneven etching, and cracks or poor contact during the packaging process, thereby affecting device performance, yield and production efficiency.

[0003] Therefore, in order to mitigate the adverse effects of wafer warpage, some measures are taken to address wafer warpage during semiconductor manufacturing. First, material selection can be improved, and materials with similar thermal expansion coefficients can be used to reduce warpage caused by inter-layer mismatch. Secondly, process parameters are optimized. For example, in high-temperature processing and chemical processes, the rate of temperature change is controlled to reduce thermal stress. Then, pre-detection and screening are performed. The degree of wafer warpage is detected by non-contact measurement equipment, and wafers with severe warpage are screened out at an early stage to avoid entering critical processes. Finally, through process equipment adjustment, the equipment settings are modified to adapt to warped wafers to ensure production continuity and equipment stability.

[0004] However, the existing methods to avoid wafer warpage are mainly through optimizing materials, adjusting process parameters and improving process equipment. Although these measures have alleviated the adverse effects of wafer warpage to a certain extent, there are still many shortcomings. First, the way to optimize materials relies on finding materials with similar thermal expansion coefficients to reduce warpage, but there are complex differences in material properties in different processes, and it is impossible to completely avoid the occurrence of warpage, especially in the process of stacking multi-layer structures. In addition, material improvements are often accompanied by high cost investment, which increases the complexity of manufacturing. Secondly, although the adjustment of process parameters, such as temperature control and chemical treatment optimization, can reduce the warpage caused by thermal stress, due to the complex structure of the wafer and the changing process environment, it is difficult to solve all warpage problems by optimizing a single parameter. Even a slight temperature change may cause local stress concentration and form a small warpage. Finally, the improvement of process equipment, although it can adapt to warped wafers to a certain extent by adjusting the equipment to ensure the continuity of production, the adjustment of these equipment is mostly based on overall processing, which is difficult to deal with the problem of local warpage of wafers, especially when processing wafers with different roughness surfaces, there is a lack of fine control means. Therefore, these existing measures can only reduce the impact of warping from an overall level, but cannot accurately correct the warped wafers. Therefore, there is an urgent need for a wafer correction device that can accurately handle warped wafers in production to further improve process stability and product yield. Summary of the invention

[0005] The object of the present invention is to provide a wafer correction device capable of accurately correcting a warped wafer.

[0006] The technical solution adopted by the present invention to solve the above problem is: a wafer correction device, comprising: The base comprises a placing plane for placing wafers, the base is provided with a first accommodating space on the side of the placing plane, the extension direction of the first accommodating space is defined as a first direction, and the first direction is perpendicular to the placing plane.

[0007] The stretching unit is arranged in the first accommodating space and includes: An adsorption component, wherein the adsorption component is controlled to move in the first direction. and A vacuum generator is connected to the adsorption component.

[0008] A controller is connected to the vacuum generator.

[0009] Wherein, when the wafer correction device is in working state, the adsorption component is adsorbed to the surface of the wafer placed on the material placement plane, and the adsorption component is controlled to move along the first direction so that the part where the wafer and the adsorption component are adsorbed is deformed in the first direction.

[0010] Preferably, the stretching unit comprises: A driving component is disposed in the first accommodating space, the driving component is connected to the adsorption component so as to move the adsorption component along the first direction, and the driving component is connected to the controller.

[0011] Preferably, the drive assembly comprises: A first telescopic member is arranged in the first accommodating space, the first telescopic member includes a first movable end, the first movable end moves in a controlled manner, the moving direction of the first movable end is configured to be parallel to the first direction, and the first movable end is connected to the adsorption component.

[0012] Preferably, the stretching unit comprises: The telescopic assembly, the vacuum generator is connected to the adsorption assembly through the telescopic assembly, and the three are internally connected, and the telescopic assembly includes: A first connecting part, one end of which is connected to the adsorption component, and the two are internally communicated.

[0013] A telescopic portion, one end of which is connected to the other end of the first connecting portion, the two are internally connected, and the telescopic direction of the telescopic portion is configured to be along the first direction. and A second connection part, one end of the second connection part is connected to the other end of the telescopic part, the other end of the second connection part is connected to the vacuum generator, and the two are internally communicated.

[0014] Preferably, the drive assembly comprises: A second telescopic member is arranged in the first accommodating space, and the second telescopic member includes a mounting portion and a second movable end, the second movable end is connected to the mounting portion in a controlled movement manner, the moving direction of the second movable end is configured to be parallel to the first direction, the mounting portion is fixedly connected to the base, and the second movable end is connected to the second connecting portion so that the second connecting portion moves with the second movable end.

[0015] Preferably, the adsorption assembly comprises: A load-bearing member is arranged at the first movable end of the first telescopic member.

[0016] A vacuum suction cup is arranged on a side of the load member away from the first telescopic member, and the vacuum suction cup is connected to the first connecting portion so that the vacuum suction cup is connected to the vacuum generator.

[0017] Preferably, each of the stretching units includes at least two of the adsorption components, and each of the stretching units also includes the driving component, the telescopic component and the vacuum generator which are arranged in one-to-one correspondence with each of the adsorption components.

[0018] Preferably, the vacuum suction cup comprises: The suction part is adsorbed on the surface of the wafer when the wafer correction device is in working state.

[0019] The elastic section is connected to the suction part and communicated with the suction part, and the elastic section is configured to be elastically deformable.

[0020] The connecting end is connected to and communicated with an end of the elastic section away from the suction portion.

[0021] Particularly, a wafer correction device comprises a visual recognition component, wherein the visual recognition component is connected to the controller, and the base is provided with a plurality of the first accommodating spaces on the side of the material placement plane, and each of the first accommodating spaces is provided with the stretching unit.

[0022] The control method of a wafer correction device comprises: Acquire first detection data of a wafer placed on the material placement plane, wherein the first detection data is height difference data of the wafer in the first direction obtained by detecting the wafer placed on the material placement plane through the visual recognition component.

[0023] The warping position of the wafer placed on the placement plane is determined according to the first detection data.

[0024] The stretching unit corresponding to the position is determined according to the warping position of the wafer placed on the material placement plane.

[0025] A first control signal is sent to the stretching unit at the corresponding position, and the first control signal is used to trigger the driving component in the stretching unit at the corresponding position to drive the stretching unit to move in the first direction, so that the adsorption component in the stretching unit at the corresponding position contacts the wafer surface.

[0026] A second control signal is sent to the stretching unit at the corresponding position, where the second control signal is used to trigger the vacuum generator in the stretching unit at the corresponding position, so that the adsorption component in the stretching unit at the corresponding position is adsorbed to the wafer.

[0027] Sending a third control signal to the stretching unit at the corresponding position, wherein the third control signal is used to trigger the driving component in the stretching unit at the corresponding position to pull or push the warped portion of the wafer toward a preset plane; Second detection data of the wafer placed on the material placement plane is obtained, where the second detection data is height difference data of the wafer in the first direction obtained by detecting the calibrated wafer placed on the material placement plane by the visual recognition component.

[0028] If the second detection data is not within the preset range, the warping position of the wafer on the loading plane is determined again based on the second detection data, and the first control signal, the second control signal and the third control signal are sent again to the stretching unit at the corresponding position so that the stretching unit at the corresponding position repeats the correction action until the second detection data is within the preset range.

[0029] If the second detection data is within the preset interval, a fourth control signal is sent to the stretching unit at the corresponding position, and the fourth control signal is used to stop the stretching unit at the corresponding position from running.

[0030] Preferably, the adsorption assembly further comprises a vacuum detector, which is connected to the carrier to detect the vacuum degree at the adsorption area when the vacuum suction cup adsorbs the wafer, and the vacuum detector is connected to the controller.

[0031] After sending a second control signal to the stretching unit at the corresponding position, wherein the second control signal is used to trigger the vacuum generator in the stretching unit at the corresponding position so that the adsorption component in the stretching unit at the corresponding position adsorbs the wafer, the following steps are also included: The first vacuum detection data and the second vacuum detection data are obtained, wherein the first vacuum detection data is vacuum degree data obtained by detecting the adsorption component at the corresponding position and the wafer adsorption point by the vacuum detector, and the second vacuum detection data is vacuum degree data obtained by detecting the adsorption component at the corresponding position and the wafer adsorption point by the vacuum detector after a preset time.

[0032] It is determined whether a difference between the first vacuum detection data and the second vacuum detection data exceeds a preset value.

[0033] If the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset range, the area on the wafer covered by the adsorption component in the stretching unit at the corresponding position is a vulnerable area, and a fifth control signal is sent to the stretching unit corresponding to the vulnerable area. The fifth control signal is used to trigger the vacuum generator in the stretching unit corresponding to the vulnerable area to reduce the vacuum degree in the adsorption space corresponding to the vulnerable area.

[0034] If the difference between the first vacuum detection data and the second vacuum detection data is lower than the preset range or within the preset range, the area on the wafer covered by the adsorption component in the stretching unit at the corresponding position is an adsorbable area, and the vacuum degree in the adsorption space corresponding to the adsorbable area remains unchanged.

[0035] The beneficial effects of the embodiments of the present invention are as follows: The wafer correction device, which is arranged in a base and includes an adsorption component that can move in the vertical direction and a stretching unit of a vacuum generator connected thereto, realizes direct correction of the warped part of the wafer. This scheme utilizes vacuum adsorption and controlled stretching to effectively solve the problem in the prior art that wafer warping cannot be completely eliminated by relying solely on material improvement, process parameter adjustment and equipment adjustment. Furthermore, the adsorption component can move vertically in a controlled manner to accurately correct the warped area, avoiding the limitation of the prior art that warping can only be handled as a whole. By connecting the controller and the vacuum generator, dynamic adjustment of the negative pressure environment is realized, so that the device can dynamically correct the warped wafer during the semiconductor manufacturing process, significantly improving the product yield and manufacturing stability.

[0036] The control method of the wafer correction device adopts technical means such as visual recognition components, stretching units, vacuum generators and vacuum detectors, thereby effectively solving the problem that the prior art cannot accurately correct the wafer warpage by relying on material improvement, process parameter adjustment and equipment adjustment. First, the visual recognition component can obtain the height difference data of the wafer in real time, accurately identify the warped part, and improve the accuracy of the correction by accurately positioning the warped area. Secondly, through the coordinated work of multiple stretching units, the warped part can be processed in different regions, avoiding the limitations of the overall adjustment in the prior art. Thirdly, the vacuum adsorption technology is combined with the dynamic feedback mechanism of the vacuum detector to ensure real-time monitoring of the vacuum degree of the adsorption space during the correction process, and can effectively identify and protect the vulnerable areas of the wafer to avoid damage. Moreover, through multiple correction actions and feedback detection, the system can automatically complete the warpage adjustment until the warpage of the wafer enters the preset range, ensuring the restoration of the flatness of the wafer surface. Thereby achieving the technical effects of improving the flatness of the wafer, reducing process errors and improving product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is a schematic structural diagram of a wafer correction device in one embodiment of the present invention.

[0038] Figure 2 Schematic diagram of the structure of a stretching unit in one embodiment of the present invention.

[0039] Figure 3 It is a schematic enlarged view of the height difference of each warped portion of the wafer in the first direction when the wafer is placed on a loading plane in one embodiment of the present invention.

[0040] Figure 4 It is a schematic state diagram of an adsorption component in an embodiment of the present invention when it is in a concave position.

[0041] Figure 5 It is a schematic structural diagram of an adsorption component in a reference position in one embodiment of the present invention.

[0042] Figure 6 It is a schematic structural diagram of an adsorption component in an upward convex position in one embodiment of the present invention.

[0043] Figure 7 FIG. 1 is a schematic diagram of a control method for a wafer correction device according to an embodiment of the present invention. Figure 1 .

[0044] Figure 8 FIG. 1 is a schematic diagram of a control method for a wafer correction device according to an embodiment of the present invention. Figure 2 .

[0045] Wherein: 100, base; 110, material placement plane; 200, stretching unit; 210, adsorption component; 211, load-bearing part; 212, vacuum suction cup; 2121, suction part; 2122, elastic section; 2123, connection end; 213, vacuum detector; 220, vacuum generator; 230, telescopic component; 231, first connection part; 232, telescopic part; 233, second connection part; 240, driving component; 241, first telescopic part; 2411, first movable end; 242, second telescopic part; 2421, second movable end; 300, controller; 400, visual recognition component. DETAILED DESCRIPTION

[0046] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0047] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the scope of protection of the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description created by the present application, unless otherwise specified, "multiple" means two or more.

[0048] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood by specific circumstances.

[0049] like Figure 1-2As shown, a wafer correction device is provided in a preferred embodiment of the present application, including a base 100, a stretching unit 200 and a controller 300, wherein the base 100 includes a loading plane 110, and the loading plane 110 is configured to place wafers. Therefore, the base 100 itself should be installed on a horizontal plane, and the loading plane 110 should also be parallel to the horizontal plane. The base 100 is provided with a first accommodating space on the side of the loading plane 110, and the extension direction of the first accommodating space is defined as a first direction, and the first direction is perpendicular to the loading plane 110, that is, the first direction should be perpendicular to the horizontal plane under normal circumstances. The stretching unit 200 is arranged in the first accommodating space. The stretching unit 200 includes an adsorption component 210 and a vacuum generator 220. The adsorption component 210 is a controlled component, and its movement is controlled by an external mechanism. It moves along the extension direction of the first accommodating space, that is, it moves along the first direction perpendicular to the horizontal plane. The vacuum generator 220 can be embodied as a vacuum generator 220 in a specific manner. The vacuum generator 220 and the adsorption component 210 should be connected through a pipe fitting, so that the vacuum generator 220 is connected to the adsorption component 210, so that when the vacuum generator 220 is running, a negative pressure vacuum environment is generated in the adsorption component 210. The controller 300 can be embodied as a PLC industrial computer in a specific manner. The connection method between the controller 300 and the vacuum generator 220 can be selected from two methods: wired connection and wireless communication connection, which should be adapted to the actual application scenario. When the wafer correction device is in working state, the adsorption component 210 contacts the surface of the wafer placed on the loading plane 110, and is adsorbed on the wafer surface through the vacuum generator 220, and the adsorption component 210 is controlled to move in the first direction, so that the warped part of the wafer is pulled or pushed toward the preset plane by the adsorption component 210. The preset plane is a plane parallel to the horizontal plane. In an ideal case, after the warped part of the wafer is flattened, the side of the wafer facing the loading plane 110 and the side away from the loading plane 110 should be parallel to the preset plane. In an actual environment, the two sides of the flattened wafer should also be approximately parallel to the preset plane.

[0050] In this embodiment, a stretching unit 200 is provided in the base 100 and includes an adsorption component 210 movable in the vertical direction and a vacuum generator 220 connected thereto, so as to achieve direct correction of the warped portion of the wafer. This solution utilizes vacuum adsorption and controlled stretching to effectively solve the problem in the prior art that wafer warping cannot be completely eliminated by relying solely on material improvement, process parameter adjustment, and equipment adjustment. Furthermore, the adsorption component 210 can move vertically in a controlled manner to accurately correct the warped area, thus avoiding the limitation of the prior art that warping can only be handled as a whole. By connecting the controller 300 with the vacuum generator 220, dynamic adjustment of the negative pressure environment is achieved, so that the device can dynamically correct warped wafers during semiconductor manufacturing, significantly improving the product yield and manufacturing stability.

[0051] In some embodiments, in order to drive the adsorption assembly 210 to move along the first direction, the stretching unit 200 further includes a driving assembly 240, which is also installed in the first accommodating space, connected to the adsorption assembly 210 to move the adsorption assembly 210 along the first direction, and connected to the controller 300 to be driven by the controller 300. In order to drive the adsorption assembly 210 to move, the driving assembly 240 may include a first telescopic member 241, which is disposed in the first accommodating space, and includes a first movable end 2411, and the first movable end 2411 moves in a controlled manner, and the moving direction of the first movable end 2411 is configured to be parallel to the first direction, and the first movable end 2411 is connected to the adsorption assembly 210 to drive the adsorption assembly 210 to move in a direction close to or away from the wafer. The first telescopic member 241 can be embodied as an electric push rod, a hydraulic cylinder, a pneumatic cylinder, etc. In the present embodiment, the pneumatic cylinder can be taken as an example, and the cylinder body of the pneumatic cylinder is fixedly connected in the first accommodation space. Figure 2 shown.

[0052] In this embodiment, since the driving component 240 is connected to the adsorption component 210 by a technical means, and the driving component 240 includes a first telescopic member 241, which can move the adsorption component 210 along the first direction, the problem of low accuracy and inability to make detailed adjustments for different warping positions in the prior art during the wafer warping correction process is effectively solved. Driven by the first telescopic member 241 (such as an electric push rod, a hydraulic cylinder or a cylinder), the adsorption component 210 can be controlled to approach or deviate from the wafer in a direction perpendicular to the wafer surface, ensuring accurate tensile correction at different warping positions. In particular, through the use of a cylinder, while providing precise displacement control, the stability of the tensile force can be guaranteed to avoid damage to the wafer surface due to uneven tension. In this way, fine correction of the warped part of the wafer is achieved, the correction accuracy is improved, the correction time is shortened, and ultimately the product yield and the stability of the manufacturing process are improved.

[0053] In some embodiments, in order to connect the vacuum generator 220 with the adsorption component 210 and meet the situation that the adsorption component 210 can move relative to the vacuum generator 220, the stretching unit 200 also includes a telescopic component 230, and the vacuum generator 220 is connected to the adsorption component 210 through the telescopic component 230, and the three are internally connected. The telescopic component 230 includes a first connecting part 231, a telescopic part 232 and a second connecting part 233, wherein one end of the first connecting part 231 is connected to the adsorption component 210, and the two are internally connected, one end of the telescopic part 232 is connected to the other end of the first connecting part 231, and the two are internally connected, the telescopic direction of the telescopic part 232 is configured to be along the first direction, one end of the second connecting part 233 is connected to the other end of the telescopic part 232, and the other end of the second connecting part 233 is connected to the vacuum generator 220.

[0054] In this embodiment, the first connecting portion 231, the second connecting portion 233 and the telescopic portion 232 are all pipe fittings, and the opposite ends are sealed and connected. In a specific manner, the three can be formed as one piece, wherein the telescopic portion 232 can be selected as a bellows to meet the telescopic requirements, so that the telescopic portion 232 can be telescoped when the first telescopic member 241 drives the adsorption component 210 to move, so as to avoid deformation of the connection pipeline arrangement, as shown in the specific Figure 1 and Figure 2 It is understandable that an online vacuum pressure-regulating valve may be provided on the pipeline (telescopic assembly 230) connecting the vacuum generator 220 and the adsorption assembly 210, and the online vacuum pressure-regulating valve is connected to the controller 300, so that the controller 300 can adjust the adsorption force applied by the adsorption assembly 210 to the wafer through the online vacuum pressure-regulating valve.

[0055] In this embodiment, the telescopic component 230 is used to connect the vacuum generator 220 with the adsorption component 210, and the telescopic component 230 includes a first connection part 231, a telescopic part 232 and a second connection part 233. Each part is connected by sealing and maintains internal communication. In particular, the telescopic part 232 is designed as a bellows structure, which can adapt to the movement requirements of the adsorption component 210 and expand and contract. Therefore, the problem of unstable adsorption caused by the deformation of the vacuum connecting pipe when the adsorption component 210 moves in the prior art is effectively solved. Through this technical solution, when the adsorption component 210 moves in the first direction, the telescopic component 230 can ensure the continuity and sealing of the vacuum adsorption, which not only avoids the distortion and deformation arrangement of the connecting pipeline, but also realizes high adaptability and flexibility in the wafer correction process, thereby improving the stability and operation accuracy of the device in the process of correcting wafer warpage.

[0056] Furthermore, in some embodiments, in order to expand the moving range of the adsorption component 210, the driving component 240 also includes a second telescopic member 242, and the second telescopic member 242 is also installed in the first accommodating space and is located below the first telescopic member 241, that is, located on the side of the first telescopic member 241 away from the loading plane 110. The second telescopic member 242 includes a second movable end 2421, and the second movable end 2421 moves in a controlled manner. The second movable end 2421 is connected to the second connecting part 233, so that the second connecting part 233 moves with the second movable end 2421 to make the telescopic part 232 telescope.

[0057] In this embodiment, the second telescopic member 242 can also be embodied as a cylinder in a specific manner. You can choose to fix the cylinder body of the cylinder in the first accommodating space, and regard the piston end as the second movable end 2421. You can also choose to fix the piston of the cylinder to the base 100 so that the cylinder body can move. In this case, the cylinder body is the second movable end 2421. Further, in order to meet the requirements of expanding the moving range of the adsorption component 210, the moving direction of the second movable end 2421 of the second telescopic member 242 is parallel to and opposite to the moving direction of the first movable end 2411 of the first telescopic member 241. Specifically, the adsorption component 210 is divided into three working heights, such as Figures 3 to 6As shown, they correspond to the convex position AA, the reference position BB and the concave position CC of the warped wafer respectively. Among them, when in the reference position, the first movable end 2411 of the first telescopic member 241 is in a retracted state, and the second movable end 2421 of the second telescopic member 242 is in an extended state. At this time, the compression amount of the telescopic part 232 is medium, and the adsorption component 210 at this time will adsorb the part of the wafer on the material plane 110 near the preset plane; when in the concave position, the first movable end 2411 of the first telescopic member 241 is in a retracted state, and the second movable end 2421 of the second telescopic member 242 is in a retracted state. At this time, the telescopic part 232 is compressed to the minimum, and the adsorption component 210 at this time will adsorb the concave part of the wafer on the material plane 110; when in the convex position, the first movable end 2411 of the first telescopic member 241 is in an extended state, and the second movable end 2421 of the second telescopic member 242 is in an extended state. At this time, the telescopic part 232 is stretched to the maximum, and the adsorption component 210 at this time will adsorb the convex part of the wafer on the material plane 110.

[0058] In this embodiment, due to the technical means of the second telescopic member 242 cooperating with the first telescopic member 241, the second telescopic member 242 is installed below the first telescopic member 241 and connected to the second connecting portion 233 through its second movable end 2421, so as to achieve further telescopic movement of the telescopic component 230 and expansion of the moving range of the adsorption component 210, thereby effectively solving the problem of the limited moving range of the adsorption component 210 in the prior art and the inability to accurately handle different warped parts of the wafer. Through this technical solution, the adsorption component 210 can flexibly move at different heights such as the convex position, the reference position and the concave position, and by adjusting the cooperation of the two telescopic members, accurate adsorption and correction of different parts of the wafer can be achieved, thereby ensuring the fine processing of each part during the wafer warpage correction process, greatly improving the adaptability of the device, the correction accuracy and the control effect of the wafer surface flatness.

[0059] It can be understood that both the first telescopic member 241 and the second telescopic member 242 are configured with passages for the telescopic assembly 230 and other pipes to pass through without affecting the sealing performance.

[0060] In some embodiments, in order to make the adsorption component 210 more specific, the adsorption component 210 includes a load member 211 and a vacuum suction cup 212. The load member 211 is fixedly installed at the first movable end 2411 of the first telescopic member 241 to move with the first movable end 2411. The vacuum suction cup 212 is installed on the side of the load member 211 away from the first telescopic member 241. The vacuum suction cup 212 is connected to one end of the first connecting portion 231 to connect the vacuum suction cup 212 to the vacuum generator 220, so that the vacuum suction cup 212 can generate negative pressure when the vacuum generator 220 is running, thereby adsorbing to the wafer.

[0061] It should be noted that an adsorption component 210 generally includes a complex part 211 and one to two vacuum suction cups 212, and an adsorption component 210, a telescopic component 230, a vacuum generator 220 and a driving component 240 can be regarded as a single group of adsorption parts. Each of the stretching units 200 includes at least two groups of adsorption parts, but in some embodiments, the two vacuum suction cups 212 can also be respectively connected to a vacuum generator 220 through the corresponding telescopic components 230. Only a switching valve needs to be added between the telescopic component 230 and the vacuum generator 220 to quickly complete the fast switching between different groups of adsorption parts. Specifically, it can be applied to the tenth step of the control method for the wafer correction device described later to switch the high-pressure suction cup group (adsorption part) and the low-pressure suction cup group (adsorption part) in the same stretching unit 200 described later. In some embodiments, each stretching unit 200 has four groups of adsorption parts, and there are four vacuum suction cups 212 in the four groups of adsorption parts. The four vacuum suction cups 212 are grouped in pairs. The two groups of vacuum suction cups 212 can be arranged in parallel or cross-arranged, which should be determined according to the application environment. In some specific embodiments, the two groups of vacuum suction cups 212 are cross-arranged, one group can be controlled as a low-pressure suction cup group under the action of the controller 300 and the corresponding vacuum generator 220, and the other group can be controlled as a high-pressure suction cup group under the action of the controller 300 and the corresponding vacuum generator 220, so as to cooperate with the control method described later, use the low-pressure suction cup group to adsorb on the vulnerable area of ​​the wafer, and use the high-pressure suction cup group to adsorb on the adsorbable area of ​​the wafer, so as to provide sufficient adsorption force for the suction cup wafer as a whole.

[0062] In this embodiment, due to the technical means of the load member 211 and the vacuum suction cup 212, the load member 211 is fixed at the first movable end 2411 of the first telescopic member 241, and is connected to the vacuum generator 220 through the vacuum suction cup 212, so that the vacuum suction cup 212 can generate negative pressure when the vacuum generator 220 is running, thereby achieving the adsorption of the wafer. Therefore, the problem of the single structure and insufficient adsorption force of the adsorption component 210 in the prior art is effectively solved. Through this design, the structure of the adsorption component 210 is more specific, and the adsorption force is improved, especially under the cooperation of multiple groups of adsorption parts, by controlling the low-pressure and high-pressure suction cup groups to adsorb the vulnerable area and the adsorbable area of ​​the wafer respectively, the device further enhances the adsorption stability and safety of the wafer as a whole, ensures the adsorption effect during the wafer correction process, reduces the risk of wafer damage, and significantly improves the efficiency and accuracy of wafer correction.

[0063] Since the concave and convex surfaces of the wafer are irregularly distributed, adjacent concave and convex positions will extend or contract in the horizontal direction when the wafer is vertically flattened. In order to balance the horizontal extension or contraction, the vacuum suction cup 212 includes a suction portion 2121, an elastic section 2122 and a connecting end 2123, wherein the suction portion 2121 is adsorbed on the surface of the wafer when the wafer correction device is in a working state, the elastic section 2122 is a cylindrical structure, the elastic section 2122 is connected to the suction portion 2121, and the two are internally connected, the elastic section 2122 is configured to be elastically deformable, thereby offsetting the horizontal extension or contraction generated when adjacent concave and convex positions are vertically flattened, and the connecting end 2123 is connected to an end of the elastic section 2122 away from the suction portion 2121, and the connecting end 2123 is connected to the elastic section 2122.

[0064] In this embodiment, due to the use of the technical means of the suction part 2121, the elastic section 2122 and the connecting end 2123, especially the design of the elastic section 2122, it can be elastically deformed during the wafer correction process, thereby effectively offsetting the horizontal extension or contraction problem caused by the vertical flattening due to the irregular distribution of the concave and convex surface of the wafer. Therefore, the risk of wafer breakage caused by adjacent reverse displacement during the flattening of irregular concave and convex surfaces during wafer correction is effectively solved. Through this structural design, when the vacuum suction cup 212 vertically stretches the wafer, the elastic section 2122 can flexibly adjust the position compensation, ensuring the integrity of the wafer during the correction process, avoiding damage, improving the stability and safety of wafer correction, and significantly improving the yield of wafer processing.

[0065] In some embodiments, the wafer correction device also includes a vacuum breaking valve. Each stretching unit 200 is equipped with a separate vacuum breaking valve so that when the vacuum suction cup 212 is mistakenly adsorbed to the wafer, the vacuum breaking valve can be used to separate the vacuum suction cup 212 from the wafer. Specifically, the vacuum breaking valve is connected to the telescopic assembly 230 and is connected to the air path of the stretching unit 200.

[0066] In order to further improve the control of the above-mentioned wafer correction device, the wafer correction device also includes a visual recognition component 400. The visual recognition component 400 (not shown in the figure) is a prior art. The visual recognition component 400 is connected to the controller 300. The base 100 is provided with a plurality of the first accommodating spaces on the side of the material placement plane 110. The stretching unit 200 is provided in each of the first accommodating spaces.

[0067] The wafer correction device control method is as follows: Figure 7 As shown, the specific steps include: In the first step, the controller 300 obtains the first detection data of the wafer placed on the material plane 110. The first detection data is the height difference data of the wafer in the first direction obtained by the visual recognition component 400 for detecting the wafer placed on the material plane 110. Figure 3 shown.

[0068] In this step, the controller 300 detects the wafer placed on the material placement plane 110 to obtain the first detection data of the wafer. The specific operation process is as follows: The controller 300 receives the detection instruction and starts the visual recognition component 400. The device uses a high-precision camera or sensor to scan and analyze the surface of the wafer on the material placement plane 110. The visual recognition component 400 can accurately capture the slight height changes of the wafer in different areas.

[0069] After the visual recognition component 400 scans the entire surface of the wafer, it obtains the height data of the wafer in the first direction. The height data can reflect the surface flatness of the wafer, especially whether there is warping or unevenness on the wafer surface.

[0070] The visual recognition component 400 obtains the height difference of different positions on the wafer surface, especially the deviation of the warped position from the reference plane, by comparing the height data of different areas. These height difference data can help the system determine whether the overall shape of the wafer surface meets the requirements, or whether certain areas of the wafer need further correction.

[0071] The first detection data collected by the visual recognition component 400 is transmitted to the controller 300. The controller 300 determines the specific warpage conditions of each area on the wafer surface according to the height difference data in combination with a preset correction algorithm.

[0072] After receiving the height difference data, the controller 300 is ready to start subsequent correction actions, such as locating the warping position, selecting a suitable stretching unit 200, and preparing to perform correction.

[0073] Through the above process, the system can accurately grasp the height difference of the wafer in the first direction, providing an accurate basis for subsequent wafer correction.

[0074] In a second step, the controller 300 determines the warping position of the wafer placed on the placement plane 110 according to the first detection data.

[0075] In the second step, the controller 300 determines the warping position of the wafer placed on the material placement plane 110 according to the first detection data obtained in the first step. The specific operation process is as follows: After receiving the first detection data, the controller 300 starts to process the data. The first detection data usually includes height information of various positions on the wafer surface. The controller 300 compares the height data with the reference plane preset by the system or the expected flatness value to analyze the height difference of the wafer surface.

[0076] The controller 300 calculates the height deviation of each area of ​​the wafer and finds the area that is obviously beyond the allowable range. The warped position of the wafer is usually manifested as a significant convexity or concaveness of certain areas relative to the reference plane. The controller 300 automatically identifies these abnormal areas and marks them as the warped areas of the wafer.

[0077] If the height of a certain part of the wafer is significantly higher than the reference plane, these parts are identified as "convex" areas. If the height of a certain part of the wafer is significantly lower than the reference plane, these parts are identified as "concave" areas.

[0078] In order to accurately correct the wafer, the controller 300 needs to not only identify the warped area, but also determine the specific coordinates of these warped locations. By analyzing the height data, the controller 300 can determine the specific spatial location of the wafer warped area, usually using two-dimensional plane coordinates (X, Y) and height deviation values ​​(Z) to represent the exact location of the warped area.

[0079] Once the controller 300 determines the warp location, the information is stored in the system for subsequent correction operations. Information about each warp area, including its type (convex or concave), specific coordinates, and height deviation, is used to determine the correction solution.

[0080] In some embodiments, the controller 300 may compare multiple detection results through an algorithm. If the detected warping position is significantly different from a preset expected value, further data correction or sensor calibration may be triggered.

[0081] Through the above steps, the system can accurately determine the warping position of the wafer so that accurate correction operations can be performed through the corresponding stretching unit 200 in the next step to ensure that the flatness of the wafer surface meets the requirements.

[0082] In the third step, according to the warping position of the wafer placed on the loading plane 110, the stretching unit 200 corresponding to the position is determined, and a first control signal is sent to the stretching unit 200 at the corresponding position, wherein the first control signal is used to trigger the driving component 240 in the stretching unit 200 at the corresponding position to drive the stretching unit 200 to move in the first direction, so that the adsorption component 210 in the stretching unit 200 at the corresponding position contacts the surface of the wafer.

[0083] In the third step, the system accurately positions the corresponding stretching units 200 according to the determined wafer warpage position, and triggers these stretching units 200 to perform correction operations by sending a first control signal. The detailed description of this step is as follows: According to the wafer warpage positions identified in the second step, the controller 300 matches these positions with the stretching units 200 on the loading plane 110. The stretching units 200 are usually distributed in different areas of the wafer, and each unit is responsible for a different range. The controller 300 determines the specific stretching unit 200 responsible for the area by comparing the coordinates of the warpage position. For example, if the warpage position is located in the upper right corner of the wafer, the controller 300 will determine the stretching unit 200 in the upper right corner area as the target unit.

[0084] Once the corresponding stretching unit 200 is determined, the controller 300 sends a first control signal to the unit. The control signal includes an instruction to start the stretching unit 200 and move in a first direction (vertical direction) through its driving component 240. This movement is used to adjust the suction component 210 in the stretching unit 200 so that it can accurately contact the surface of the warped area of ​​the wafer.

[0085] After receiving the control signal, the driving component 240 (such as an electric push rod or a cylinder) in the stretching unit 200 starts to move, pushing the adsorption component 210 to move along the first direction. During the movement, the adsorption component 210 gradually approaches and finally contacts the surface of the wafer, ensuring that the adsorption position is accurately aligned with the warping area. The movement amount and speed of the driving component 240 are pre-set by the controller 300 according to the warping height difference to achieve smooth and accurate operation.

[0086] When the adsorption assembly 210 moves to the set position, its vacuum chuck 212 will contact the warped surface of the wafer. At this time, the vacuum chuck 212 generates negative pressure through the internally connected vacuum generating device, thereby firmly adsorbing the warped area, preparing for the next correction operation.

[0087] Through the above steps, the system can not only accurately locate the warping position, but also effectively contact the adsorption component 210 with the wafer surface through the corresponding stretching unit 200, laying the foundation for subsequent leveling and correction operations. This process ensures the efficiency and accuracy of the wafer flatness correction operation.

[0088] The fourth step is to send a second control signal to the stretching unit 200 at the corresponding position, wherein the second control signal is used to trigger the vacuum generator 220 in the stretching unit 200 at the corresponding position, so that the adsorption component 210 in the stretching unit 200 at the corresponding position is adsorbed to the wafer.

[0089] In the fourth step, the system sends a second control signal to the stretching unit 200 at the corresponding position to trigger the vacuum generator 220 so that the adsorption component 210 and the wafer can be effectively adsorbed. The details of this step are as follows: In the third step, the adsorption assembly 210 has contacted the warped position of the wafer. After confirming that the contact position is correct, the controller 300 sends a second control signal to the corresponding stretching unit 200. The signal usually includes an activation instruction for the vacuum generator 220 to ensure that the system can maintain a stable and effective working state during the adsorption process.

[0090] After receiving the second control signal, the vacuum generator 220 inside the stretching unit 200 will start working. The device is connected to the adsorption assembly 210 through an internal pipeline and is responsible for creating a negative pressure environment. The activation of the vacuum generator 220 will cause the air pressure inside the adsorption assembly 210 to decrease, thereby achieving adsorption of the wafer surface.

[0091] After the vacuum generator 220 generates negative pressure, the vacuum suction cup 212 (such as the suction part 2121) of the adsorption assembly 210 will quickly adsorb on the warped area of ​​the wafer. At this time, the elastic section 2122 (such as the elastic section 2122) of the adsorption assembly 210 will adapt to the irregular shape of the wafer surface, ensure close contact and effectively offset the pressure changes caused by adjacent concave and convex positions. This process enhances the stability and reliability of adsorption.

[0092] During the adsorption process, the controller 300 may monitor the state of adsorption through a built-in sensor or feedback system, such as monitoring the vacuum degree, adsorption force and contact condition. The system can adjust the working state of the vacuum generator 220 in time through real-time data analysis to ensure that the adsorption process proceeds smoothly.

[0093] Once the adsorption is successful, the controller 300 can receive a feedback signal of the adsorption status to confirm that the adsorption assembly 210 is firmly connected to the wafer surface. At this time, the system will enter the next processing or correction procedure to ensure that the wafer is effectively processed in the subsequent process.

[0094] During the adsorption process, if the adsorption force is insufficient or adsorption fails, the controller 300 can resend the signal or adjust the contact pressure of the adsorption component 210 in time to ensure the integrity of the wafer and the smooth progress of subsequent processes.

[0095] Through the above process, the system can ensure that the adsorption component 210 in the stretching unit 200 at the corresponding position is effectively adsorbed to the wafer, ensuring that the warped position is firmly grasped, laying a solid foundation for subsequent correction operations.

[0096] The fifth step is to send a third control signal to the stretching unit 200 at the corresponding position, wherein the third control signal is used to trigger the driving component 240 in the stretching unit 200 at the corresponding position to pull the warped portion of the wafer toward the preset plane.

[0097] In the fifth step, the system sends a third control signal to the stretching unit 200 at the corresponding position to trigger the driving assembly 240 to pull the warped portion of the wafer toward the preset plane. The detailed description of this step is as follows: In the fourth step, the adsorption assembly 210 has successfully adsorbed the warped part of the wafer. At this time, the controller 300 will send a third control signal to the stretching unit 200 at the corresponding position according to the preset calibration program. The main function of this signal is to instruct the driving assembly 240 to start working so as to achieve the movement of the warped part.

[0098] After receiving the third control signal, the drive assembly 240 (such as an electric push rod, a cylinder or a hydraulic cylinder) in the stretching unit 200 will start and perform corresponding operations. The drive assembly 240 is usually designed to be able to perform precise linear movement in a specific direction to ensure that the warped part moves in the direction of the preset plane.

[0099] The operation of the driving assembly 240 causes the adsorption assembly 210 and the warped portion of the wafer to which it is attached to be pulled toward a preset plane. This movement includes the following aspects: The moving speed of the driving assembly 240 should be precisely controlled according to the characteristics of the wafer and the requirements of the preset plane to avoid mechanical stress on the wafer due to rapid movement.

[0100] According to the previous detection data and the warping condition, the driving assembly 240 will make corresponding adjustments to ensure that the warped part is pulled to a suitable position so that it is aligned with the preset plane.

[0101] During the wafer movement, the controller 300 monitors the working status of the drive assembly 240 in real time, including information such as position, speed, and load. At this time, the system can use sensors to collect data and adjust the working parameters of the drive assembly 240 according to the feedback to ensure that the warped part is pulled to the target position.

[0102] During the pulling process, the controller 300 will ensure that the connection between the wafer and the adsorption assembly 210 remains stable to avoid adsorption failure or wafer damage due to improper movement. The system may adopt a safety mechanism, such as limiting excessive movement force, to ensure the safety of the wafer.

[0103] When the drive assembly 240 completes the pulling operation on the warped part, the controller 300 will receive a feedback signal to confirm that the warped part has been successfully moved to the preset plane. This confirmation will prepare for subsequent operations (such as desorption, flatness detection, etc.).

[0104] Through the above process, the system can accurately pull the warped part of the wafer and move it toward the preset plane, thereby effectively correcting the warping problem of the wafer and providing the necessary flatness foundation for subsequent processing steps.

[0105] The sixth step is to obtain second detection data of the wafer placed on the placing plane 110 , wherein the second detection data is height difference data of the wafer in the first direction obtained by detecting the calibrated wafer placed on the placing plane 110 by the visual recognition component 400 .

[0106] In the sixth step, the system obtains the second detection data of the wafer placed on the material placement plane 110 to evaluate the state of the wafer after correction. The detailed description of this step is as follows: In the fifth step, the warped part of the wafer has been effectively pulled to the preset plane, completing the preliminary correction operation. At this point, the system needs to re-test the corrected wafer to ensure that its flatness meets the predetermined technical standards.

[0107] The controller 300 will control the visual recognition component 400 to start working. The device is usually equipped with a high-resolution camera or other sensor to capture images of the wafer and extract relevant data. The working process of the visual recognition system generally includes the following steps: Image acquisition: The camera will take a picture of the wafer placed on the loading plane 110 to obtain its surface image. In order to improve the image quality, the system may optimize the lighting conditions to ensure that the details of the wafer surface are clearly visible.

[0108] Image processing: The captured images are processed by image processing algorithms to identify and analyze the height variations of the wafer. The algorithms may include edge detection, contour analysis and other techniques to accurately measure the height differences on the wafer surface.

[0109] Obtaining second detection data: Through image processing, the visual recognition component 400 will extract height difference data about the wafer in the first direction. These data reflect the height changes of the wafer surface at different positions, including: By comparing the height difference between the corrected wafer and the preset plane, the system can evaluate the correction effect and determine whether the warping has been effectively corrected.

[0110] The second test data will be recorded in numerical form, including the height value of each measuring point and the corresponding height difference, forming a complete test report.

[0111] The acquired second detection data will be stored in real time in the controller 300 for subsequent analysis and decision-making. The system may compare it with the first detection data to analyze the changes before and after the correction.

[0112] The system will evaluate the correction effect based on the results of the second test data. If the test results show that the wafer surface flatness meets the predetermined requirements, the system will prepare for subsequent processing or delivery.

[0113] After completing the acquisition of the second detection data, the controller 300 will update the status information of the wafer to ensure that subsequent operations such as transportation, processing or quality inspection can be performed based on the latest wafer status.

[0114] Through the above process, the system can effectively obtain the second inspection data of the calibrated wafer, provide data support to ensure the flatness and quality of the wafer, and further enhance the accuracy and reliability of the entire processing flow.

[0115] The seventh step is to determine the warping position of the wafer on the loading plane 110 again according to the second detection data if the second detection data is not within the preset interval, and to send the first control signal, the second control signal and the third control signal to the stretching unit 200 at the corresponding position again, so that the stretching unit 200 at the corresponding position repeats the correction action until the second detection data is within the preset interval; if the second detection data is within the preset interval, to send the fourth control signal to the stretching unit 200 at the corresponding position, and the fourth control signal is used to stop the stretching unit 200 at the corresponding position.

[0116] In the seventh step, the system further corrects the flatness of the wafer to ensure that it meets the preset quality standards. This step is as follows: The system first analyzes the acquired second detection data to determine whether it is within a preset reasonable range. The preset range is usually determined by the processing standard of the wafer, for example, the allowable height difference should be controlled within a certain micron range.

[0117] Specific judgment conditions: If the second detection data is not within the preset range.

[0118] The system will issue an instruction to re-determine the warpage position of the wafer, which means that the visual recognition component 400 needs to be used again to perform height detection on the wafer to obtain a more accurate warpage position.

[0119] Once the new warping position is determined, the system will again send the first control signal, the second control signal and the third control signal to the stretching unit 200 at the corresponding position. The functions of these three signals are: The first control signal is used to trigger the driving assembly 240 of the stretching unit 200 to position it to a newly determined warping position.

[0120] The second control signal: activates the vacuum generator 220 in the stretching unit 200 to ensure that the adsorption component 210 can effectively contact the wafer surface for adsorption.

[0121] The third control signal: the driving assembly 240 starts to work, pulling the warped part toward the preset plane to perform a correction operation.

[0122] This process may be repeated until the second detection data is corrected to within a preset range. This cyclic correction process ensures that the required flatness can be achieved in any case.

[0123] If the second test data is within the preset range: Once it is confirmed that the second detection data meets the preset standard, the system will send a fourth control signal to the stretching unit 200 at the corresponding position. The function of this signal is to instruct the stretching unit 200 to stop running and end the current calibration process.

[0124] During this process, the controller 300 will record the calibration results and may update the system status to prepare for subsequent processing or inspection operations.

[0125] After the calibration is completed, the system will generate a calibration report to record the results of each test and calibration to facilitate subsequent data analysis and quality management.

[0126] In addition, if necessary, the system can also set up a monitoring mechanism to track the status changes of the wafer in real time to ensure that quality standards are continuously met during the production process.

[0127] Through the above steps, the system can ensure that the wafer maintains a high standard of flatness in each processing link, thereby improving product quality and reliability and reducing potential defects and losses.

[0128] In the sending of a second control signal to the stretching unit 200 at the corresponding position, the second control signal is used to trigger the vacuum generator 220 in the stretching unit 200 at the corresponding position, so that after the adsorption assembly 210 in the stretching unit 200 at the corresponding position adsorbs the wafer, in order to prevent the easily damaged area (circuit area) on the wafer surface from being damaged by the suction force of the high vacuum suction cup 212, or too much low vacuum surface cannot form sufficient adsorption force on the wafer as a whole, the adsorption assembly 210 also includes a vacuum detector 213, and the vacuum detector 213 is connected to the load to detect the vacuum degree at the adsorption area when the vacuum suction cup 212 adsorbs the wafer, and the vacuum detector 213 is connected to the controller 300. The control method, such as Figure 8 As shown, it also includes: The eighth step is to obtain first vacuum detection data and second vacuum detection data. The first vacuum detection data is vacuum degree data obtained by detecting the adsorption space at the corresponding position through the vacuum detector 213. The second vacuum detection data is vacuum degree data obtained by detecting the adsorption space at the corresponding position through the vacuum detector 213 after a preset time.

[0129] In the eighth step, the system monitors the vacuum adsorption process to ensure that the wafer is not damaged during the adsorption process, especially the protection of vulnerable areas such as the circuit area. The detailed description of this step is as follows: Acquiring the first vacuum detection data: When the second control signal is sent, the vacuum chuck 212 starts to contact the surface of the wafer. At this moment, the vacuum detector 213 starts to work and monitors the vacuum degree in the adsorption area in real time.

[0130] The vacuum degree data is referred to as the first vacuum detection data, which reflects the instantaneous vacuum state in the adsorption space and ensures that the adsorption assembly 210 can effectively adsorb the wafer.

[0131] Acquiring the second vacuum detection data: After the first vacuum detection data is acquired, the system will set a preset time period. The length of this time period can be adjusted according to specific operational needs to facilitate observation of the stability of the vacuum state.

[0132] After the preset time is over, the vacuum detector 213 detects the adsorption space at the corresponding position again to obtain second vacuum detection data. This data is used to compare the vacuum degree change during the adsorption process to evaluate whether the adsorption effect is ideal.

[0133] Analysis of vacuum degree data: This data is used to observe the change of vacuum degree after a period of time. If the vacuum degree continues to be maintained within the expected range, it means that the adsorption process is effective and stable; otherwise, further adjustments may be required.

[0134] The vacuum detector 213 is connected to the controller 300 to ensure that real-time data can be transmitted to the control system. The controller 300 will make a judgment based on the first vacuum detection data and the second vacuum detection data obtained to determine the next operation strategy.

[0135] If it is found that the vacuum degree does not meet the standard, the controller 300 may issue an adjustment instruction to change the working state of the adsorption component 210 .

[0136] Through the implementation of the eighth step, the system can accurately monitor the changes in the vacuum state during the adsorption process to ensure that the wafer, especially the sensitive areas, are not affected by excessive suction during the adsorption process, thereby protecting the overall integrity and functional performance of the wafer.

[0137] The ninth step is to determine whether the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset value.

[0138] In the ninth step, the system compares the first vacuum detection data with the second vacuum detection data to determine the effectiveness and stability of the adsorption process. The detailed description of this step is as follows: First, the controller 300 compares the first vacuum detection data with the second vacuum detection data.

[0139] Difference = second vacuum test data - first vacuum test data. This difference reflects the change of vacuum degree during the adsorption process.

[0140] During the system design phase, engineers will set a reasonable preset value based on factors such as the material properties of the wafer, the adsorption environment, and working requirements. This preset value is used to measure whether the vacuum degree change is within an acceptable range.

[0141] The controller 300 compares the calculated difference with a preset value: If the difference exceeds the preset value, it means that the vacuum degree changes too much during the adsorption process, which may cause unstable adsorption or uneven suction of the wafer. At this time, the system will enter the corresponding processing procedure to prevent potential damage.

[0142] If the difference does not exceed the preset value, it indicates that the adsorption process is stable and the adsorption effect is good. At this point, the system can continue with the subsequent steps to ensure that the wafer remains safe and stable during the next operation.

[0143] Furthermore, no matter the difference exceeds the standard or does not exceed the standard, the controller 300 should record the first vacuum detection data, the second vacuum detection data and the difference thereof. These data can be used for subsequent analysis and optimization to improve the performance and reliability of the entire system.

[0144] Through the implementation of the ninth step, the system can effectively monitor and control the vacuum state during the adsorption process, ensure the safety and integrity of the wafer, and prevent damage caused by improper adsorption. This process helps to improve production efficiency and product quality.

[0145] Step 10: If the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset interval, the area on the wafer covered by the adsorption assembly 210 in the stretching unit 200 at the corresponding position is a vulnerable area, and a fifth control signal is sent to the stretching unit 200 corresponding to the vulnerable area, and the fifth control signal is used to trigger the vacuum generator 220 in the stretching unit 200 corresponding to the vulnerable area, so that the vacuum degree in the adsorption space corresponding to the vulnerable area decreases. If the difference between the first vacuum detection data and the second vacuum detection data is lower than or within the preset interval, the area on the wafer covered by the adsorption assembly 210 in the stretching unit 200 at the corresponding position is an adsorbable area, and the vacuum degree in the adsorption space corresponding to the adsorbable area remains unchanged.

[0146] In the tenth step, the system determines the vulnerability of different areas on the wafer surface based on the difference between the first vacuum detection data and the second vacuum detection data, and takes corresponding measures to protect the wafer. The specific steps are as follows: The controller 300 first determines whether the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset interval. The determination of this difference helps to identify whether there is a risk area on the wafer surface.

[0147] The preset interval is set by the system designer based on material characteristics, operating conditions and empirical data to ensure the safety of the wafer during the adsorption process.

[0148] If the difference exceeds the preset interval, at this time, the system determines that the area on the wafer covered by the adsorption component 210 in the stretching unit 200 at the corresponding position is a vulnerable area. The controller 300 sends a fifth control signal to the stretching unit 200 corresponding to the vulnerable area. This signal is used to activate the vacuum generator 220 in the stretching unit 200 corresponding to the vulnerable area to reduce the vacuum degree in the area. Reducing the vacuum degree can reduce the adsorption force on the wafer, thereby reducing the risk of damage to the vulnerable area. The specific operation may include reducing the adsorption force or instantaneously releasing part of the vacuum to reduce the force on the wafer surface. The role of protecting the vulnerable area of ​​the wafer can also be played by switching the high-pressure suction cup group and the low-pressure suction cup group in the aforementioned stretching unit 200, that is, when the difference exceeds the preset interval, the vacuum generator 220 corresponding to the high-pressure suction cup group stops running, so that the low-pressure suction cup group in the stretching unit 200 is adsorbed with the wafer.

[0149] If the difference is lower than the preset interval or within the preset interval, in this case, the controller 300 will identify the area on the wafer covered by the adsorption assembly 210 in the stretching unit 200 at the corresponding position as an adsorbable area. The controller 300 maintains the vacuum level in the adsorption space corresponding to the adsorbable area unchanged. This means that the system will continue to use the current adsorption setting to ensure that the adsorption force is strong enough to effectively fix the wafer and prevent it from moving or shifting in subsequent operations.

[0150] According to the monitoring of the first vacuum detection data and the second vacuum detection data, the controller 300 monitors the state of the wafer in real time and adjusts the adsorption strategy according to the actual situation.

[0151] If the system discovers a new vulnerable area during the judgment process, the above process will be repeated to ensure that the wafer is always safe.

[0152] In this step, the system should record data related to the vulnerable area and the adsorbable area, including the control signal issued, the vacuum degree change and the corresponding area information. These data will be used for subsequent analysis and improvement to help optimize the adsorption process and improve the production quality and safety of wafers.

[0153] Through the implementation of the above steps, the system can intelligently identify the characteristics of different areas on the wafer surface and adopt appropriate adsorption strategies to effectively protect the wafer, reduce damage risks and improve production efficiency.

[0154] The above contents described in this specification are merely examples of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in similar ways, as long as they do not deviate from the contents of the present specification or exceed the scope defined by the claims, they shall all fall within the protection scope of the present invention.

Claims

1. A wafer correction device, characterized in that: include: A base, wherein the base comprises a material placement plane for placing wafers, and the base is provided with a first accommodation space on the side of the material placement plane, wherein an extension direction of the first accommodation space is defined as a first direction, and the first direction is perpendicular to the material placement plane; The stretching unit is arranged in the first accommodating space and includes: an adsorption component, the adsorption component is controlled to move in the first direction; and A vacuum generator, the vacuum generator being in communication with the adsorption assembly; A controller connected to the vacuum generator; Wherein, when the wafer correction device is in working state, the adsorption component is adsorbed to the surface of the wafer placed on the material placement plane, and the adsorption component is controlled to move along the first direction so that the part where the wafer and the adsorption component are adsorbed is deformed in the first direction.

2. A wafer correction device according to claim 1, characterized in that: The stretching unit comprises: A driving component is disposed in the first accommodating space, the driving component is connected to the adsorption component so as to move the adsorption component along the first direction, and the driving component is connected to the controller.

3. A wafer correction device according to claim 2, characterized in that: The drive assembly comprises: A first telescopic member is arranged in the first accommodating space, the first telescopic member includes a first movable end, the first movable end moves in a controlled manner, the moving direction of the first movable end is configured to be parallel to the first direction, and the first movable end is connected to the adsorption component.

4. The wafer correction device according to claim 3, characterized in that: The stretching unit comprises: The telescopic assembly, the vacuum generator is connected to the adsorption assembly through the telescopic assembly, and the three are internally connected, and the telescopic assembly includes: A first connecting portion, one end of which is connected to the adsorption component, and the two are internally communicated; a telescopic portion, one end of which is connected to the other end of the first connecting portion, the two are internally communicated, and the telescopic direction of the telescopic portion is configured to be along the first direction; and A second connection part, one end of the second connection part is connected to the other end of the telescopic part, and the other end of the second connection part is connected to the vacuum generator, and the two are internally communicated.

5. The wafer correction device according to claim 4, characterized in that: The drive assembly comprises: A second telescopic member is arranged in the first accommodating space, and the second telescopic member includes a mounting portion and a second movable end, the second movable end is connected to the mounting portion in a controlled movement manner, the moving direction of the second movable end is configured to be parallel to the first direction, the mounting portion is fixedly connected to the base, and the second movable end is connected to the second connecting portion so that the second connecting portion moves with the second movable end.

6. A wafer correction device according to any one of claims 4 to 5, characterized in that: The adsorption assembly comprises: a load member, disposed at the first movable end of the first telescopic member; A vacuum suction cup is arranged on a side of the load member away from the first telescopic member, and the vacuum suction cup is connected to the first connecting portion so that the vacuum suction cup is connected to the vacuum generator.

7. The wafer correction device according to claim 6, characterized in that: Each of the stretching units includes at least two of the adsorption components, and each of the stretching units also includes the driving component, the telescopic component and the vacuum generator which are arranged in one-to-one correspondence with each of the adsorption components.

8. The wafer correction device according to claim 7, characterized in that: The vacuum chuck comprises: A suction part, wherein the suction part is adsorbed on the surface of the wafer when the wafer correction device is in a working state; an elastic section connected to the suction portion and in communication therewith, wherein the elastic section is configured to be elastically deformable; The connecting end is connected to and communicated with an end of the elastic section away from the suction portion.

9. A control method for a wafer correction device as claimed in any one of claims 7 or 8, characterized in that: The wafer correction device further includes a visual recognition component, which is connected to the controller. The base is provided with a plurality of first accommodation spaces on the side of the material placement plane, and each of the first accommodation spaces is provided with the stretching unit. The control method comprises: Acquire first detection data of a wafer placed on the material placement plane, wherein the first detection data is height difference data of the wafer in the first direction obtained by detecting the wafer placed on the material placement plane through the visual recognition component; Determine a warpage position of a wafer placed on the placement plane according to the first detection data; Determine the stretching unit corresponding to the position according to the warping position of the wafer placed on the material placement plane; Sending a first control signal to the stretching unit at the corresponding position, wherein the first control signal is used to trigger the driving component in the stretching unit at the corresponding position to drive the stretching unit to move in the first direction, so that the adsorption component in the stretching unit at the corresponding position contacts the wafer surface; Sending a second control signal to the stretching unit at the corresponding position, wherein the second control signal is used to trigger the vacuum generator in the stretching unit at the corresponding position, so that the adsorption component in the stretching unit at the corresponding position is adsorbed to the wafer; Sending a third control signal to the stretching unit at the corresponding position, wherein the third control signal is used to trigger the driving component in the stretching unit at the corresponding position to pull or push the warped portion of the wafer toward a preset plane; Acquire second detection data of the wafer placed on the material placement plane, wherein the second detection data is height difference data of the wafer in the first direction obtained by detecting the calibrated wafer placed on the material placement plane by the visual recognition component; If the second detection data is not within the preset interval, the warping position of the wafer on the loading plane is determined again according to the second detection data, and the first control signal, the second control signal and the third control signal are sent again to the stretching unit at the corresponding position, so that the stretching unit at the corresponding position repeats the correction action until the second detection data is within the preset interval; If the second detection data is within the preset interval, a fourth control signal is sent to the stretching unit at the corresponding position, and the fourth control signal is used to stop the stretching unit at the corresponding position from running.

10. The control method of a wafer correction device according to claim 9, characterized in that: The adsorption assembly further includes a vacuum detector, which is connected to the carrier to detect the vacuum degree at the adsorption area when the vacuum chuck is adsorbed on the wafer, and the vacuum detector is connected to the controller; After sending a second control signal to the stretching unit at the corresponding position, wherein the second control signal is used to trigger the vacuum generator in the stretching unit at the corresponding position so that the adsorption component in the stretching unit at the corresponding position adsorbs the wafer, the following steps are also included: Acquire first vacuum detection data and second vacuum detection data, wherein the first vacuum detection data is vacuum degree data obtained by detecting the adsorption component and the wafer adsorption position at the corresponding position by the vacuum detector, and the second vacuum detection data is vacuum degree data obtained by detecting the adsorption component and the wafer adsorption position at the corresponding position by the vacuum detector after a preset time; Determining whether a difference between the first vacuum detection data and the second vacuum detection data exceeds a preset value; If the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset interval, the area on the wafer covered by the adsorption component in the stretching unit at the corresponding position is a vulnerable area, and a fifth control signal is sent to the stretching unit corresponding to the vulnerable area, wherein the fifth control signal is used to trigger the vacuum generator in the stretching unit corresponding to the vulnerable area, so that the vacuum degree in the adsorption space corresponding to the vulnerable area decreases; If the difference between the first vacuum detection data and the second vacuum detection data is lower than the preset range or within the preset range, the area on the wafer covered by the adsorption component in the stretching unit at the corresponding position is an adsorbable area, and the vacuum degree in the adsorption space corresponding to the adsorbable area remains unchanged.

Images