A rectangular waveguide SSPP mode switching based terahertz phase shifter

Abstract

The application belongs to the technical field of electromagnetic functional devices, and discloses a terahertz phase shifter based on rectangular waveguide SSPP mode switching, which comprises an input rectangular waveguide, a periodic rectangular waveguide structure, a diode-regulated microstructure chip, a non-regulated microstructure chip, and an output rectangular waveguide; the input rectangular waveguide serves as a terahertz wave input and is connected with one end of the periodic rectangular waveguide structure; the periodic rectangular waveguide structure comprises a straight-through rectangular waveguide and a periodically arranged micro-opening rectangular cavity; the diode-regulated microstructure chip comprises a chip substrate, a grounded metal block, an ungrounded metal block, a high-impedance feeding wire, a low-impedance feeding metal block, and a diode; the non-regulated microstructure chip comprises a non-regulated chip substrate, a non-regulated grounded metal block, and a non-regulated ungrounded metal block; the diode-regulated microstructure chip and the non-regulated microstructure chip are respectively embedded in two micro-opening rectangular cavities that are symmetrically distributed on two long edges of the straight-through rectangular waveguide.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of electromagnetic functional devices, and particularly relates to a terahertz phase shifter based on SSPP mode switching of a rectangular waveguide. BACKGROUND

[0002] Terahertz waves are electromagnetic waves with a frequency range of 0.1 THz to 10 THz, and the frequency is between microwave millimeter wave and light wave. Various types of terahertz devices have not yet been developed maturely. Terahertz dynamic adjustable phase shift devices have great potential value in the fields of terahertz phase shift keying communication systems, terahertz high-resolution imaging systems, and terahertz phased array radar systems.

[0003] Surface plasmon polariton (SPP) is a mixed electromagnetic mode highly localized on the interface of two media generated by strong coupling of electromagnetic oscillation and electron oscillation in the material. Natural materials can efficiently excite surface plasmon mode in the infrared / optical frequency band, but it is difficult to realize surface plasmon mode in the microwave, millimeter wave, and terahertz bands. Periodic structures can realize electromagnetic characteristics similar to surface plasmons in the millimeter wave, terahertz, and other lower frequency bands, which are called spoof surface plasmon polaritons (SSPP) or pseudo surface plasmons, and have the characteristics of high-frequency asymptotic cutoff.

[0004] In wireless communication, phase shift keying is used for information encoding, which sends information by changing the phase of the carrier and receives it with coherent demodulation. Terahertz wireless communication uses this method to effectively improve the transmission rate and increase the anti-noise ability, and the key is the terahertz phase shifter. Mechanical traditional radar rotating antenna for multi-directional scanning limits the scanning speed and has a bulky structure. Phased array radar can control the beam direction without mechanical movement, which is suitable for high-speed target detection. Terahertz phased array radar has small size, high speed, narrow beam, and high integration, but the core-terahertz phase shifter still needs to be developed.

[0005] In view of the above analysis, the existing technical problems to be solved in the prior art are:

[0006] (1) The existing SSPP control device is limited to the microwave and millimeter wave bands, and is a chip-on-device. Terahertz wave bands usually use rectangular waveguides for module connection, and chip-on-device requires additional design of transition structure.

[0007] (2) The existing terahertz phase shift technology scheme is still in the traditional form, and the reconfigurable periodic terahertz phase shifter still needs to be developed.

[0008] (3) The existing terahertz phase shift technology has a small bandwidth, a large insertion loss when shifting a phase in a large range, and low linearity. SUMMARY

[0009] In view of the problems in the prior art, the present application provides a terahertz phase shifter based on rectangular waveguide SSPP mode switching, which can realize dynamic terahertz phase shifting, and can adjust the period number of the waveguide SSPP structure to control the phase shifting range. The terahertz phase shifter based on rectangular waveguide SSPP mode switching has reconfigurable period characteristics, small insertion loss, small reflection coefficient, large operating bandwidth, and high linearity of phase shifting.

[0010] The present application is implemented as follows: a terahertz phase shifter based on rectangular waveguide SSPP mode switching, comprising an input rectangular waveguide, a periodic rectangular waveguide structure, a diode-regulated microstructure chip, a non-regulated microstructure chip, and an output rectangular waveguide.

[0011] The input rectangular waveguide serves as an input for terahertz waves and is connected to one end of the periodic rectangular waveguide structure. The other end of the periodic rectangular waveguide structure is connected to the output rectangular waveguide to output the terahertz waves after phase shifting. The diode-regulated microstructure chip and the non-regulated microstructure chip are embedded in the periodic rectangular waveguide structure.

[0012] The periodic rectangular waveguide structure is divided into two parts: one part is a straight-through rectangular waveguide with the same long and short edge dimensions as the input rectangular waveguide and the output rectangular waveguide; the other part is a periodic array of micro-open rectangular cavities, one end of which is connected to the long edge of the straight-through rectangular waveguide and symmetrically distributed on both long edges of the straight-through rectangular waveguide; the other end of the micro-open rectangular cavity is provided with a micro-small flaky opening, which is located in the middle of the long edge of the waveguide to facilitate the feeding of the electric control signal.

[0013] The diode-regulated microstructure chip comprises a chip substrate, a grounded metal block, an ungrounded metal block, a high-impedance feeding line, a low-impedance feeding metal block, and a diode. The chip substrate is embedded in the micro-small flaky opening in the middle of the long edge of the micro-open rectangular cavity, and the edge thereof is flush with the edge of the straight-through rectangular waveguide. All metal structures are placed on the chip substrate. The grounded metal block is flush with the edge of the straight-through rectangular waveguide, one end of which is in contact with the waveguide wall for grounding, and the other end is in contact with the cathode of the diode. The ungrounded metal block is flush with the edge of the straight-through rectangular waveguide, one end of which is in contact with the anode of the diode, and the other end is not in contact with the waveguide wall and is connected with the high-impedance feeding line. The high-impedance feeding line is connected with the low-impedance feeding metal block, which serves as an input for the diode to input the electric control signal. The low-impedance feeding metal block is close to the edge of the micro-small flaky opening to facilitate the connection with the external feeding circuit.

[0014] The non-controlled microstructure chip includes a non-controlled chip substrate, a non-controlled grounded metal block, and a non-controlled ungrounded metal block. The positions and dimensions of the non-controlled chip substrate, the non-controlled grounded metal block, and the non-controlled ungrounded metal block are the same as those of the chip substrate, grounded metal block, and ungrounded metal block on the corresponding diode-controlled microstructure chip.

[0015] Diode-controlled and non-controlled microstructure chips are embedded in two micro-aperture rectangular cavities symmetrically distributed along the two long sides of a through rectangular waveguide. Furthermore, the diode-controlled and non-controlled microstructure chips are arranged in a regular, centrally symmetrical manner following the periodicity of the rectangular waveguide structure, forming an SSPP electromagnetic mode structure.

[0016] Furthermore, the working principle of the terahertz phase shifter based on rectangular waveguide SSPP mode switching is as follows:

[0017] In a periodic rectangular waveguide structure, diode-controlled and uncontrolled microstructure chips are arranged in a regular pattern. The on / off state of the diodes, determined by the input voltage of the feeding structure, determines whether the terahertz wave can enter the micro-aperture rectangular cavity during transmission, thus reconstructing different propagation structures, including SSPP mode propagation structures and high-pass filter structures. Because the SSPP mode propagation structure has low-pass characteristics, it exhibits a phase delay effect with the high-pass filter structure, thereby achieving phase shifting of the terahertz wave.

[0018] Furthermore, the through rectangular waveguide in the periodic rectangular waveguide structure can be extended to accommodate more micro-aperture rectangular cavities; the size, period interval length, and number of periods of the micro-aperture rectangular cavities are adjustable to regulate the phase shift caused by switching the operating frequency and propagation structure.

[0019] Furthermore, the metal structure dimensions on the diode-controlled microstructure chip and the non-controlled microstructure chip are adjustable to regulate the insertion loss and phase shift generated by switching the propagation structure form.

[0020] Furthermore, the chip substrate material can be commercial PCB boards, silicon, quartz, gallium arsenide, silicon carbide and other semiconductor materials.

[0021] Furthermore, the metal materials used in diode-controlled and non-controlled microstructure chips can be high-conductivity metals such as aluminum, copper, silver, gold, and platinum.

[0022] Furthermore, the diodes are Schottky diodes, terahertz PIN diodes, and high-mobility planar diodes.

[0023] Based on the above technical solutions and the technical problems solved, the advantages and positive effects of the technical solution to be protected by this invention are as follows:

[0024] First, the beneficial effects of this invention are as follows:

[0025] (1) In view of the problem that there are few SSPP control technology solutions and that existing on-chip devices require additional design of transition structures, this invention proposes a terahertz phase shifting method based on rectangular waveguide SSPP mode switching, which provides a basic solution for rectangular waveguide SSPP phase shifting devices, and finally realizes a terahertz phase shifter with low insertion loss and high linearity, and it is easy to connect with other terahertz modules.

[0026] (2) In this invention, the through rectangular waveguide in the periodic rectangular waveguide structure can be extended, and the size, period interval length and number of periods of the micro-opening rectangular cavity can be adjusted, realizing a reconfigurable phase-shifting structure that is easy to expand the function.

[0027] (3) The processing technology of this invention is mature. For rectangular waveguides, it can be processed by machine tools and laser etching. For diode-controlled microstructure chips and non-controlled microstructure chips, it can be processed by vapor deposition, electron beam exposure and metal evaporation. It has great application potential and prospects.

[0028] Secondly, the technical solution of this invention fills a technical gap in the industry both at home and abroad: the SSPP waveguide phase modulation scheme is proposed for the first time in this invention, which solves the problem that there are few existing SSPP modulation technology schemes and that existing on-chip devices require additional design of transition structures. The method provided by this invention realizes a terahertz phase shifter with low insertion loss and high linearity, providing an advanced solution for terahertz radar and beam control systems.

[0029] Third, the terahertz phase shifter based on rectangular waveguide SSPP (surface plasmon polariton) mode switching in this invention provides significant technological advancements for industrial applications. Traditional terahertz phase shifters often have limitations in size control, precise phase shift adjustment, and low-loss control, making them unsuitable for the demands of high-precision terahertz applications. This invention, however, achieves high-precision, low-loss phase adjustment of terahertz waves by introducing a periodic rectangular waveguide structure and embedding controlled and uncontrolled microstructure chips within it. The following are the key technical problems solved by this solution in industrial applications and its significant advancements:

[0030] 1. Precise Phase Shift Control: This invention employs a diode-controlled microstructure chip embedded in a rectangular waveguide, combined with SSPP mode, to achieve phase shift control of terahertz waves. Traditional structures are limited in the precision of phase shift adjustment, while this invention allows for finer adjustment of the diode control signal, thereby achieving a higher precision phase shift control effect, suitable for high-precision applications.

[0031] 2. Reduced transmission loss: By employing a micro-aperture rectangular cavity and a periodic waveguide structure, the transmission loss of terahertz waves is effectively reduced. Compared to traditional terahertz phase shifters, this invention significantly reduces transmission loss, enabling terahertz waves to maintain higher signal strength and integrity over long distances, thus optimizing transmission efficiency.

[0032] 3. Enhanced System Integration: By embedding diode-controlled and uncontrolled chips within the waveguide structure, this invention achieves a compact design that is easy to integrate and combine with other terahertz devices, thus improving system integration. Particularly for applications requiring miniaturization and modularization, it reduces the complexity of external control circuits, facilitating industrial production and application.

[0033] 4. Enhanced Anti-interference Capability: By controlling the microstructure chip with diodes and the periodic waveguide structure, this invention achieves electromagnetic field control in SSPP mode. This design significantly improves anti-interference capability. This characteristic is particularly important for terahertz communication and sensing applications in complex environments, ensuring signal stability and accuracy.

[0034] 5. Scalability and Flexibility: Through adjustable electronic control signals, this invention achieves flexible frequency response within the adjustable range, meeting the needs of different application scenarios, including terahertz radar, imaging, communication, and sensing. Compared to traditional fixed-frequency phase shifters, this invention is more suitable for multifunctional terahertz applications.

[0035] 6. Promoting the Industrial Application of Terahertz Technology: The high-precision, low-loss phase shifter design of this invention provides a superior option for the application of terahertz technology in fields such as industrial inspection, non-contact measurement, and communication. The significant performance improvement of this solution helps promote the wider application of terahertz technology in industry, fills the gaps in existing technologies, and lays the foundation for the future development of terahertz technology.

[0036] Through the above technological advancements, this invention not only surpasses existing technologies in terms of accuracy and performance, but also significantly optimizes the industrial application value of terahertz phase shifters, providing a reliable solution for the practical application of terahertz waves in high-precision communication, detection, imaging and other fields. Attached Figure Description

[0037] Figure 1 This is an overall structural diagram of a terahertz phase shifter based on rectangular waveguide SSPP mode switching provided in an embodiment of the present invention;

[0038] Figure 2 This is a side view of a terahertz phase shifter based on rectangular waveguide SSPP mode switching provided in an embodiment of the present invention;

[0039] Figure 3 This is a schematic diagram of a diode-controlled microstructure chip provided in an embodiment of the present invention;

[0040] Figure 4 This is a schematic diagram of a non-regulated microstructure chip provided in an embodiment of the present invention;

[0041] Figure 5 This is a schematic diagram of the S-parameter curves when all diodes are connected, provided in an embodiment of the present invention;

[0042] Figure 6 This is a schematic diagram of the S-parameter curves when all diodes are off, provided in an embodiment of the present invention.

[0043] Figure 7 This is a schematic diagram of the phase curve provided in an embodiment of the present invention;

[0044] In the diagram: A. Input rectangular waveguide; B. Periodic rectangular waveguide structure; C. Diode-controlled microstructure chip; D. Uncontrolled microstructure chip; E. Output rectangular waveguide; B1. Through rectangular waveguide; B2. Micro-aperture rectangular cavity; C1. Chip substrate; C2. Grounded metal block; C3. Ungrounded metal block; C4. High-impedance feed line; C5. Low-impedance feed metal block; C6. Diode; D1. Uncontrolled chip substrate; D2. Uncontrolled grounded metal block; D3. Uncontrolled ungrounded metal block. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0046] The terahertz phase shifter based on rectangular waveguide SSPP mode switching provided in this embodiment of the invention includes an input rectangular waveguide A, a periodic rectangular waveguide structure B, a diode-controlled microstructure chip C, an uncontrolled microstructure chip D, and an output rectangular waveguide E.

[0047] The input rectangular waveguide A serves as the input terahertz wave and is connected to one end of the periodic rectangular waveguide structure B. The other end of the periodic rectangular waveguide structure B is connected to the output rectangular waveguide E to output the phase-shifted terahertz wave. Diode-controlled microstructure chip C and non-controlled microstructure chip D are embedded within the periodic rectangular waveguide structure B.

[0048] The periodic rectangular waveguide structure B is divided into two parts. One part is a straight rectangular waveguide B1, with the same long and short side dimensions as the input rectangular waveguide A and the output rectangular waveguide E. The other part is a periodically arranged micro-aperture rectangular cavity B2. One end of the micro-aperture rectangular cavity B2 is connected to the long side of the straight rectangular waveguide B1, and they are symmetrically distributed on the two long sides of the straight rectangular waveguide B1. The other end of the micro-aperture rectangular cavity B2 is provided with a small sheet-like opening, which is located in the middle of the long side of the waveguide to facilitate the feeding of electrical control signals.

[0049] The diode-controlled microstructure chip C includes a chip substrate C1, a grounded metal block C2, an ungrounded metal block C3, a high-impedance feed line C4, a low-impedance feed metal block C5, and a diode C6. The chip substrate C1 is embedded in a tiny, sheet-like opening in the middle of the long side of a micro-aperture rectangular cavity B2, with its edge flush with the edge of a through-rectangular waveguide B1. All metal structures are placed on the chip substrate C1. The grounded metal block C2 is flush with the edge of the through-rectangular waveguide B1, with one end contacting the waveguide wall for grounding and the other end contacting the cathode of diode C6. The ungrounded metal block C3 is flush with the edge of the through-rectangular waveguide B1, with one end contacting the anode of diode C6 and the other end not contacting the waveguide wall but connected to the high-impedance feed line. The high-impedance feed line C4 is connected to the low-impedance feed metal block C5, serving to provide a voltage control signal to diode C6. The low-impedance feed metal block C5 is located near the edge of the tiny, sheet-like opening, facilitating connection to an external feed circuit.

[0050] The non-controlled microstructure chip D includes a non-controlled chip substrate D1, a non-controlled grounded metal block D2, and a non-controlled ungrounded metal block D3. The positions and dimensions of the non-controlled chip substrate D1, the non-controlled grounded metal block D2, and the non-controlled ungrounded metal block D3 are the same as those of the chip substrate C1, the grounded metal block C2, and the ungrounded metal block C3 on the corresponding diode-controlled microstructure chip C.

[0051] Diode-controlled microstructure chip C and uncontrolled microstructure chip D are embedded in two micro-aperture rectangular cavities B2, which are symmetrically distributed on the two long sides of the through rectangular waveguide B1. Furthermore, the diode-controlled microstructure chip C and the uncontrolled microstructure chip D are arranged in a regular, centrally symmetrical manner following the periodicity of the periodic rectangular waveguide structure B, forming an SSPP electromagnetic mode structure.

[0052] The working principle of the terahertz phase shifter based on rectangular waveguide SSPP mode switching is as follows:

[0053] In the periodic rectangular waveguide structure B, diode-controlled microstructure chip C and uncontrolled microstructure chip D are arranged in a regular pattern. The on / off state of the diodes, controlled by the input voltage of the feeding structure, determines whether the terahertz wave can enter the micro-aperture rectangular cavity B2 during transmission, thus reconstructing different propagation structures, including an SSPP mode propagation structure and a high-pass filter structure. Since the SSPP mode propagation structure has low-pass characteristics, it exhibits a phase delay effect with the high-pass filter structure, thereby achieving a phase shift of the terahertz wave.

[0054] The through rectangular waveguide B1 in the periodic rectangular waveguide structure B can be extended to accommodate more micro-aperture rectangular cavities B2; the size, period interval length, and number of periods of the micro-aperture rectangular cavities B2 are adjustable to regulate the phase shift caused by switching the operating frequency and propagation structure.

[0055] The dimensions of the metal structures on the diode-controlled microstructure chip C and the non-controlled microstructure chip D are adjustable to regulate the insertion loss and phase shift caused by switching the propagation structure form.

[0056] The chip substrate C1 material can be a commercial PCB board, silicon, quartz, gallium arsenide, silicon carbide and other semiconductor materials.

[0057] The metal materials used in the diode-controlled microstructure chip C and the non-controlled microstructure chip D can be high-conductivity metals such as aluminum, copper, silver, gold, and platinum.

[0058] The diodes include Schottky diodes, terahertz PIN diodes, and high-mobility planar diodes.

[0059] Example:

[0060] like Figure 1 As shown, the terahertz wave is input through the input rectangular waveguide A, reaches the periodic rectangular waveguide structure B, undergoes phase shifting in the periodic rectangular waveguide structure B, and is output by the output rectangular waveguide E.

[0061] like Figure 1 , Figure 2 As shown, the through rectangular waveguide B1 in the periodic rectangular waveguide structure B has a long side of 0.711 mm and a short side of 0.356 mm, the same dimensions as the input and output rectangular waveguides. The micro-aperture rectangular cavity B2 has a length of 0.711 mm, a width of 0.26 mm, and a depth of 0.28 mm. It is connected to the long side of the through rectangular waveguide B1 and is symmetrically distributed on the two long sides of the through rectangular waveguide B1. The other end of the micro-aperture rectangular cavity B2, which is not connected to the through rectangular waveguide B1, has a small sheet-like opening for feeding electrical control signals and placing diode-controlled microstructure chip C and non-controlled microstructure chip D. The interval between each period of the micro-aperture rectangular cavity B2 is 0.11 mm.

[0062] like Figure 3 As shown, in the diode-controlled microstructure chip C, the micro-aperture rectangular cavity B2 is made of quartz material and is embedded in a tiny sheet-like opening in the middle of the long side of the micro-aperture rectangular cavity, with its edge flush with the edge of the through rectangular waveguide. The grounding metal block C2 has dimensions of 118μm × 108μm and is flush with the edge of the through rectangular waveguide, with one end contacting the waveguide wall for grounding and the other end contacting the cathode of diode C6. The ungrounded metal block C3 has dimensions of 118μm × 108μm and is flush with the edge of the through rectangular waveguide, with one end contacting the anode of diode C6 and the other end not contacting the waveguide wall but connected to the high-impedance feed line C4. The high-impedance feed line C4 has dimensions of 230μm × 10μm and is connected to the low-impedance feed metal block C5, serving as a control signal for the diode's input voltage. The low-impedance feed metal block C5 has dimensions of 90μm × 80μm. The low-impedance feed metal block is located near the edge of the tiny sheet-like opening, facilitating connection to an external feed circuit.

[0063] like Figure 4 As shown, the positions and dimensions of the non-controlled chip substrate D1, the non-controlled grounded metal block D2, and the non-controlled ungrounded metal block D3 of the non-controlled microstructure chip D are the same as those of the chip substrate, grounded metal block, and ungrounded metal block on the corresponding diode-controlled microstructure chip.

[0064] like Figure 1 As shown, diode-controlled and non-controlled microstructure chips are embedded in two micro-aperture rectangular cavities symmetrically distributed along the two long sides of a through-rectangular waveguide. The diode-controlled and non-controlled microstructure chips are arranged in a regular, centrally symmetrical pattern following the periodicity of the rectangular waveguide structure. Specifically, in the first set of two symmetrical micro-aperture rectangular cavities, the upper portion contains the diode-controlled microstructure chip, and the lower portion contains the non-controlled microstructure chip; in the second set of two symmetrical micro-aperture rectangular cavities, the upper portion contains the non-controlled microstructure chip, and the lower portion contains the diode-controlled microstructure chip; this pattern continues until the fifth set.

[0065] The diode used in this embodiment is a Schottky diode.

[0066] The metal material used in this embodiment is gold.

[0067] At this point, we input voltage through the power supply structure and simultaneously control all five diodes, switching their on / off states. For example... Figure 5 As shown, when the five diodes are connected, they form an SSPP mode propagation structure, which has low-pass characteristics, a cutoff frequency close to 350GHz, an insertion loss of less than 1dB in the 300-340GHz range, and a reflection coefficient of less than -9.8dB. Figure 6As shown, when the five diodes are disconnected, a high-pass filter structure is formed, with a cutoff frequency close to 280GHz, insertion loss below 1.1dB in the 300-340GHz range, and a reflection coefficient less than -9.3dB. Figure 7 As shown, the switching between the two transmission structures resulted in a phase shift, achieving a 180° phase shift in the 300-340GHz range.

[0068] The results show that the terahertz phase shifter based on rectangular waveguide SSPP mode switching of the present invention can achieve a 180° phase shift with wide bandwidth, high linearity, low insertion loss, and low reflection coefficient. Furthermore, the through rectangular waveguide in the periodic rectangular waveguide structure can be extended to accommodate more micro-aperture rectangular cavities; simultaneously, by adjusting the size of the micro-aperture rectangular cavities, the period interval length, and the number of periods, different operating frequencies and phase shift amounts can be achieved.

[0069] This invention relates to a terahertz phase shifter based on rectangular waveguide SSPP mode switching, belonging to the waveguide-type device category. Combined with a terahertz source, waveguide antenna, signal processing unit, and control system, this phase shifter can achieve beamforming, enabling directional transmission to users during signal transmission and improving signal transmission efficiency, speed, and accuracy. Simultaneously, by incorporating a differential network, waveguide antenna, and data acquisition and processing unit, it can achieve three-dimensional radar imaging carrying phase information or radar detection of dynamic targets. Due to the use of terahertz waves, its accuracy is far greater than that of microwave and millimeter-wave radar, possessing significant application value.

[0070] In the description of this invention, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," "front end," "rear end," "head," "tail," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first," "second," "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0071] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications, equivalent substitutions, and improvements made by those skilled in the art within the scope of the technology disclosed in the present invention, and within the spirit and principles of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A terahertz phase shifter based on rectangular waveguide SSPP mode switching, characterized in that, The application relates to a terahertz phase shifter, which comprises an input rectangular waveguide, a periodic rectangular waveguide structure, a diode-regulated microstructure chip, a non-regulated microstructure chip and an output rectangular waveguide. The input rectangular waveguide is used for inputting terahertz waves and is connected with one end of the periodic rectangular waveguide structure. The other end of the periodic rectangular waveguide structure is connected with the output rectangular waveguide and is used for outputting the terahertz waves after phase movement. The periodic rectangular waveguide structure comprises a straight-through rectangular waveguide and periodically-arranged micro-opening rectangular cavities, the length and width of the straight-through rectangular waveguide are the same as those of the input rectangular waveguide and the output rectangular waveguide. One end of the micro-opening rectangular cavity is connected with the length of the straight-through rectangular waveguide and is symmetrically distributed on the two lengths of the straight-through rectangular waveguide, and the other end is provided with a micro flaky opening for feeding in an electric control signal. The diode-regulated microstructure chip and the non-regulated microstructure chip are respectively embedded in the micro-opening rectangular cavities which are symmetrically distributed on the two lengths of the straight-through rectangular waveguide. The diode-regulated microstructure chip comprises a chip substrate, a grounded metal block, an ungrounded metal block, a high-impedance feeding wire, a low-impedance feeding metal block and a diode. The chip substrate is embedded in the micro flaky opening of the micro-opening rectangular cavity and the edge is flush with the edge of the straight-through rectangular waveguide. One end of the grounded metal block is connected with the waveguide wall and is grounded, and the other end is connected with the cathode of the diode. One end of the ungrounded metal block is connected with the anode of the diode, and the other end is connected with the high-impedance feeding wire. The high-impedance feeding wire is connected with the low-impedance feeding metal block and is used for inputting the voltage control signal of the diode, and the low-impedance feeding metal block is close to the edge of the micro flaky opening and is convenient for connecting the external feeding circuit. The non-regulated microstructure chip comprises a non-regulated chip substrate, a non-regulated grounded metal block and a non-regulated ungrounded metal block, the positions and sizes of which are the same as those of the chip substrate, the grounded metal block and the ungrounded metal block on the diode-regulated microstructure chip. The diode-regulated microstructure chip and the non-regulated microstructure chip are arranged in a central symmetry according to the periodicity of the periodic rectangular waveguide structure and form an SSPP electromagnetic mode structure. The working principle of the terahertz phase shifter based on the SSPP mode switching of the rectangular waveguide is as follows:

2. The rectangular waveguide SSPP mode switched terahertz phase shifter of claim 1, wherein, In the periodic rectangular waveguide structure, the diode-regulated microstructure chip and the non-regulated microstructure chip are regularly arranged, the on-off state of the voltage diode is inputted through the feeding structure, and then it is determined whether the terahertz waves can enter the micro-opening rectangular cavity in the transmission process, so as to reconfigure different propagation structures, which include the SSPP mode propagation structure and the high-pass filter structure.

3. The rectangular waveguide SSPP mode switched terahertz phase shifter of claim 1, wherein, The straight-through rectangular waveguide in the periodic rectangular waveguide structure can be lengthened to accommodate more micro-opening rectangular cavities. The size, periodic interval length and periodic number of the micro-opening rectangular cavity can be adjusted to adjust the working frequency and the phase movement amount generated by the propagation structure form switching. The size of the metal structure on the diode-regulated microstructure chip and the non-regulated microstructure chip can be adjusted to adjust the insertion loss and the phase movement amount generated by the propagation structure form switching.

4. The rectangular waveguide SSPP mode switched terahertz phase shifter of claim 1, wherein, The chip substrate material is a commercial PCB board, silicon, quartz, gallium arsenide or silicon carbide.

5. The rectangular waveguide SSPP mode switched terahertz phase shifter of claim 1, wherein, The metal material used in the diode-regulated microstructure chip and the non-regulated microstructure chip is aluminum, copper, silver, gold or platinum.

6. The rectangular waveguide SSPP mode switched terahertz phase shifter of claim 1, wherein, The diode is a Schottky diode, a terahertz PIN diode or a high-mobility planar diode.

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