High-frequency module and communication device

Abstract

Disclosed is a high-frequency module that transmits two transmission signals that can communicate simultaneously, wherein the heat dissipation properties of two transmission filters are improved. A high-frequency module (1) is provided with a mounting substrate (4), a first elastic wave filter, a second elastic wave filter, a resin layer, and a shield electrode. The second elastic wave filter is disposed on the first elastic wave filter, and the first elastic wave filter is disposed on the main surface (41) of the mounting substrate (4). The resin layer covers at least a portion of the first elastic wave filter and at least a portion of the second elastic wave filter. The shield electrode covers at least a portion of the resin layer. The first elastic wave filter and the second elastic wave filter both support transmission. Signals passing through the first elastic wave filter and signals passing through the second elastic wave filter can communicate simultaneously. The main surface of the second elastic wave filter on the opposite side from the first elastic wave filter side is in contact with the shield electrode. The ground electrode of the mounting substrate (4) is connected to the functional electrode of the first elastic wave filter.

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a plurality of filters and a communication device including the high-frequency module. Background Art

[0002] Patent Document 1 discloses a structure including two transmission filters. In the structure disclosed in Patent Document 1, a transmission filter (fifth filter) is provided on a main surface of a mounting substrate, and another transmission filter (sixth filter) is stacked on the transmission filter.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2020 / 261777 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] However, in the structure described in Patent Document 1, when simultaneous communication is performed using transmission signals that have passed through each of the two transmission filters, it is necessary to improve the heat dissipation properties of the two transmission filters.

[0008] An object of the present invention is to provide a high-frequency module and a communication device capable of improving the heat dissipation of two transmission filters when two transmission signals capable of simultaneous communication are transmitted.

[0009] Solutions for solving problems

[0010] A high-frequency module according to one embodiment of the present invention comprises a mounting substrate, a first elastic wave filter, a second elastic wave filter, a first resin layer, and a first shielding electrode. The mounting substrate has a first main surface and includes a first ground electrode. The first elastic wave filter is arranged on the first main surface of the mounting substrate. The second elastic wave filter is arranged on the first elastic wave filter. The first resin layer covers at least a portion of the first elastic wave filter and at least a portion of the second elastic wave filter. The first shielding electrode covers at least a portion of the first resin layer. The first elastic wave filter and the second elastic wave filter are filters that at least support transmission. A first transmission signal passing through the first elastic wave filter and a second transmission signal passing through the second elastic wave filter can communicate simultaneously. A second main surface of the second elastic wave filter on the side opposite to the first elastic wave filter is in contact with the first shielding electrode. The first elastic wave filter has a first functional electrode. The first ground electrode of the mounting substrate is connected to the first functional electrode of the first elastic wave filter.

[0011] A communication device according to one aspect of the present invention includes the high frequency module and a signal processing circuit. The signal processing circuit is connected to the high frequency module.

[0012] Effects of the Invention

[0013] According to the high-frequency module and the communication device according to one embodiment of the present invention, when two transmission signals that can be communicated simultaneously are transmitted, the heat dissipation of two transmission filters can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a top view of the high-frequency module according to the first embodiment.

[0015] Figure 2 It is related to the above high frequency module Figure 1 X1-X1 line cross-sectional view.

[0016] Figure 3 This is a circuit diagram of a communication device including the high-frequency module.

[0017] Figure 4 This is a cross-sectional view of a high-frequency module according to the second embodiment.

[0018] Figure 5 This is a cross-sectional view of a high-frequency module according to the third embodiment.

[0019] Figure 6 This is a cross-sectional view of a high-frequency module according to the fourth embodiment.

[0020] Figure 7 It is a circuit configuration diagram of a high-frequency module according to the fifth embodiment. DETAILED DESCRIPTION

[0021] The high frequency modules and communication devices according to Embodiments 1 to 5 are described below with reference to the drawings. The drawings referred to in Embodiments 1 to 5 below are schematic drawings, and the sizes and thickness ratios of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0022] (Implementation Method 1)

[0023] First, the structure of a high-frequency module 1 according to the first embodiment will be described with reference to the drawings.

[0024] (1) High frequency module

[0025] High frequency module 1 Figure 3As shown, it is used for example in a communication device 10. The communication device 10 is, for example, a portable phone such as a smartphone. In addition, the communication device 10 is not limited to a portable phone, and may be, for example, a wearable terminal such as a smart watch. The high-frequency module 1 is, for example, a module that can support the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, etc. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5GNR (New Radio).

[0026] The high frequency module 1 is a module that can support, for example, carrier aggregation and dual connectivity. Carrier aggregation and dual connectivity are technologies for communication using radio waves of multiple frequency bands simultaneously.

[0027] The communication device 10 performs communication in multiple communication frequency bands. In more detail, the communication device 10 sends a transmission signal of each communication frequency band in the multiple communication frequency bands, and receives a reception signal of each communication frequency band in the multiple communication frequency bands. Specifically, the high-frequency module 1 receives a reception signal of a first communication frequency band and a reception signal of a second communication frequency band. In addition, the high-frequency module 1 sends a transmission signal of the first communication frequency band and a transmission signal of the second communication frequency band.

[0028] The transmission signal and the reception signal of the first communication frequency band are, for example, FDD (Frequency Division Duplex) signals. In addition, the transmission signal and the reception signal of the second communication frequency band are FDD signals. FDD is a communication technology that allocates different frequency domains for transmission and reception in wireless communication.

[0029] The first communication frequency band is, for example, Band 1 of the 3GPP LTE standard. In addition, the second communication frequency band is, for example, Band 3 of the 3GPP LTE standard. The power levels of Band 1 and Band 3 are under discussion. The signal strength of the signal of power level 2 is greater than the signal strength of the signal of power level 3. That is, the signal strength of the transmitted signal of the second communication frequency band is greater than the communication strength of the transmitted signal of the first communication frequency band.

[0030] (2) Circuit structure of high-frequency module

[0031] Next, refer to Figure 3 The circuit configuration of the high-frequency module 1 according to the first embodiment will be described.

[0032] like Figure 3As shown, the high frequency module 1 according to the first embodiment includes a first transmission filter 121, a second transmission filter 131, a first reception filter 122, and a second reception filter 132. A first switch 11 and a second switch 16 are provided. In addition, the high frequency module according to the first embodiment further includes a power amplifier 141, a power amplifier 142, a low noise amplifier 151, a low noise amplifier 152, matching circuits 171 to 176, and a plurality of (four in the example shown) external connection terminals 18. The plurality of external connection terminals 18 include an antenna terminal 181, a first input terminal 182, a second input terminal 183, and an output terminal 184.

[0033] (2.1) First switch

[0034] The first switch 11 is as Figure 3 As shown, the first switch 11 is a switch for switching the path connected to the antenna terminal 181 from the first transmission filter 121 and the first reception filter 122 and the second transmission filter 131 and the second reception filter 132. That is, the first switch 11 is a switch for switching the path connected to the antenna terminal 181. The first switch 11 has a common terminal 110 and a plurality of (two in the example shown) selection terminals 111 and 112.

[0035] The common terminal 110 is connected to the antenna terminal 181. The selection terminal 111 is connected to the matching circuit 171. In addition, the selection terminal 112 is connected to the matching circuit 172.

[0036] The first switch 11 switches the connection between the common terminal 110 and the plurality of selection terminals 111 and 112. The first switch 11 is controlled by, for example, the signal processing circuit 2. The first switch 11 electrically connects the common terminal 110 to any one of the plurality of selection terminals 111 and 112 in accordance with a control signal from the RF signal processing circuit 21 of the signal processing circuit 2.

[0037] (2.2) First transmission filter, second transmission filter

[0038] The first transmission filter 121 and the second transmission filter 131 are filters that pass signals of different frequency bands. More specifically, the first transmission filter 121 is a filter that passes transmission signals of the first communication frequency band, and the second transmission filter 131 is a filter that passes transmission signals of the second communication frequency band.

[0039] Each of the first transmission filter 121 and the second transmission filter 131 is an elastic wave filter having one or more elastic wave resonators as described later. In the present embodiment, the first transmission filter 121 is a first elastic wave filter. In addition, in the present embodiment, the second transmission filter 131 is a second elastic wave filter. The first transmission filter 121 and the second transmission filter 131 are included in a single electronic component, namely, the first electronic component 51, as described later.

[0040] (2.3) First receiving filter, second receiving filter

[0041] The first reception filter 122 and the second reception filter 132 are filters that pass signals of different frequency bands. More specifically, the first reception filter 122 is a filter that passes reception signals of the first communication frequency band, and the second reception filter 132 is a filter that passes reception signals of the second communication frequency band.

[0042] Each of the first reception filter 122 and the second reception filter 132 is an elastic wave filter having one or more elastic wave resonators as described below. The first reception filter 122 and the second reception filter 132 are included in a single electronic component as described below.

[0043] (2.4) Power amplifier

[0044] The power amplifier 141 is an amplifier that amplifies the transmission signal. In more detail, the power amplifier 141 amplifies the transmission signal of the first communication frequency band. The power amplifier 141 is arranged between the first transmission filter 121 and the first input terminal 182. The power amplifier 141 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 141 is connected to an external circuit (for example, the signal processing circuit 2) via the first input terminal 182. The output terminal of the power amplifier 141 is connected to the matching circuit 173. The power amplifier 141 is controlled, for example, by a controller (not shown).

[0045] The power amplifier 142 is an amplifier for amplifying a transmission signal. In more detail, the power amplifier 142 amplifies a transmission signal of the second communication frequency band. The power amplifier 142 is arranged between the second transmission filter 131 and the second input terminal 183. The power amplifier 142 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 142 is connected to an external circuit (e.g., a signal processing circuit 2) via the second input terminal 183. The output terminal of the power amplifier 142 is connected to the matching circuit 174. The power amplifier 142 is controlled, for example, by a controller (not shown).

[0046] (2.5) Low Noise Amplifier

[0047] The low noise amplifier 151 is an amplifier that amplifies a received signal in a low noise manner. In more detail, the low noise amplifier 151 amplifies a received signal of the first communication frequency band. The low noise amplifier 151 is arranged between the first receiving filter 122 and the output terminal 184. The low noise amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low noise amplifier 151 is connected to the matching circuit 175. The output terminal of the low noise amplifier 151 is connected to an external circuit (e.g., a signal processing circuit 2) via the selection terminal 161 of the second switch 16.

[0048] The low noise amplifier 152 is an amplifier that amplifies the received signal in a low noise manner. In more detail, the low noise amplifier 152 amplifies the received signal of the second communication frequency band. The low noise amplifier 152 is arranged between the second receiving filter 132 and the output terminal 184. The low noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low noise amplifier 152 is connected to the matching circuit 176. The output terminal of the low noise amplifier 152 is connected to an external circuit (e.g., the signal processing circuit 2) via the selection terminal 162 of the second switch 16.

[0049] (2.6) Second switch

[0050] The second switch 16 is as follows Figure 3 As shown, the second switch 16 is a switch for switching the path connected to the output terminal 184 from the low noise amplifier 151 and the low noise amplifier 152. That is, the second switch 16 is a switch for switching the path connected to the output terminal 184. The second switch 16 has a common terminal 160 and a plurality of (two in the example shown) selection terminals 161 and 162.

[0051] The common terminal 160 is connected to the output terminal 184. The selection terminal 161 is connected to the low-noise amplifier 151. In addition, the selection terminal 162 is connected to the low-noise amplifier 152.

[0052] The second switch 16 switches the connection between the common terminal 160 and the plurality of selection terminals 161 and 162. The second switch 16 is controlled, for example, by the signal processing circuit 2. The second switch 16 electrically connects the common terminal 160 to any one of the plurality of selection terminals 161 and 162 in accordance with a control signal from the RF signal processing circuit 21 of the signal processing circuit 2.

[0053] (2.7) Matching circuit

[0054] The plurality of matching circuits 171 to 176 are circuits for achieving impedance matching of the circuits connected via the respective matching circuits 171 to 176. The matching circuit 171 is provided between the first switch 11 and the first transmission filter 121 and the first reception filter 122. The matching circuit 172 is provided between the first switch 11 and the second transmission filter 131 and the second reception filter 132. The matching circuit 173 is provided between the first transmission filter 121 and the power amplifier 141. The matching circuit 174 is provided between the second transmission filter 131 and the power amplifier 142. The matching circuit 175 is provided between the first reception filter 122 and the low noise amplifier 151. The matching circuit 176 is provided between the second reception filter 132 and the low noise amplifier 152.

[0055] Each of the matching circuits 171 to 176 has a structure including, for example, one or more inductors or one or more capacitors.

[0056] (2.8) External connection terminals

[0057] The plurality of external connection terminals 18 are terminals for electrically connecting to an external circuit (e.g., the signal processing circuit 2). The plurality of external connection terminals 18 include an antenna terminal 181, a first input terminal 182, a second input terminal 183, an output terminal 184, a plurality of control terminals (not shown), and a plurality of ground terminals (not shown).

[0058] The antenna 3 is connected to the antenna terminal 181 . In the high-frequency module 1 , the antenna terminal 181 is connected to the common terminal 110 of the first switch 11 .

[0059] The first input terminal 182 is a terminal for inputting a transmission signal from an external circuit (e.g., the signal processing circuit 2) to the high frequency module 1. More specifically, the first input terminal 182 is used to input a transmission signal of the first communication frequency band. In the high frequency module 1, the first input terminal 182 is connected to an input terminal of the power amplifier 141.

[0060] The second input terminal 183 is a terminal for inputting a transmission signal from an external circuit (e.g., the signal processing circuit 2) to the high frequency module 1. More specifically, the second input terminal 183 is used to input a transmission signal of the second communication frequency band. In the high frequency module 1, the second input terminal 183 is connected to an input terminal of the power amplifier 142.

[0061] The output terminal 184 is a terminal for outputting the received signal from the high frequency module 1 to an external circuit (e.g., the signal processing circuit 2). More specifically, the output terminal 184 is used to output the received signal of the first communication frequency band or the received signal of the second communication frequency band. In the high frequency module 1, the output terminal 184 is connected to the common terminal 160 of the second switch 16.

[0062] The plurality of ground terminals are terminals that are electrically connected to a ground electrode of an external substrate (not shown) provided in the communication device 10 and are provided with a ground potential. Figure 1 ) of the ground electrode 43 (refer to Figure 2 The ground electrode 43 is the circuit ground of the high frequency module 1 .

[0063] (3) Structure of high-frequency module

[0064] Next, refer to Figure 1 and Figure 2 The structure of the high-frequency module 1 according to the first embodiment will be described.

[0065] like Figure 1 and Figure 2 As shown, the high frequency module 1 includes a mounting substrate 4, a plurality of (two in the example shown) first electronic components 51, a plurality of (two in the example shown) second electronic components 52, a plurality of (two in the example shown) third electronic components 53, a plurality of (four in the example shown) fourth electronic components 54, a fifth electronic component 55, and a sixth electronic component 56. Figure 2 As shown, the high-frequency module 1 further includes a first resin layer 681 , a second resin layer 682 , and a first shield electrode 69 .

[0066] The high frequency module 1 is electrically connected to an external substrate (not shown). The external substrate is, for example, a communication device 10 such as a mobile phone or a communication device (see Figure 3 ) motherboard.

[0067] (3.1) Mounting substrate

[0068] like Figure 1 and Figure 2 As shown, the mounting substrate 4 has a main surface 41 and a main surface 42. The main surface 41 and the main surface 42 are arranged in a thickness direction D1 (see Figure 2 ) (hereinafter also referred to as "first direction D1") face each other. When the high-frequency module 1 is provided on an external substrate, the main surface 42 faces the main surface of the external substrate on the mounting substrate 4 side. The mounting substrate 4 is a double-sided mounting substrate having a first electronic component 51, a second electronic component 52, a third electronic component 53, and a fourth electronic component 54 mounted on the main surface 41, and a fifth electronic component 55 and a sixth electronic component 56 mounted on the main surface 42.

[0069] The mounting substrate 4 is a multilayer substrate formed by stacking a plurality of dielectric layers. The mounting substrate 4 has a plurality of conductive layers and a plurality of via conductors (including through electrodes). The plurality of conductive layers include a ground electrode 43 of ground potential. In the present embodiment, the ground electrode 43 is a first ground electrode. The plurality of via conductors are used to electrically connect the components (including the first electronic component 51, the second electronic component 52, the third electronic component 53, the fourth electronic component 54, the fifth electronic component 55, and the sixth electronic component 56) mounted on each of the main surfaces 41 and 42 to the conductive layer of the mounting substrate 4.

[0070] (3.2) First electronic component

[0071] like Figure 1 and Figure 2 As shown, a plurality of first electronic components 51 are arranged on the main surface 41 of the mounting substrate 4. The first electronic component 51 includes two elastic wave filters. The combination of the two elastic wave filters included in one (first) first electronic component 51 is a combination of a first transmission filter 121 and a second transmission filter 131. In addition, the combination of the two elastic wave filters included in another (second) first electronic component 51 is a combination of a first reception filter 122 and a second reception filter 132.

[0072] The two elastic wave filters included in the first electronic component 51 are, for example, elastic wave filters each including a plurality of series arm resonators and a plurality of parallel arm resonators. The elastic wave filter is, for example, a SAW (Surface Acoustic Wave) filter using surface acoustic waves. Furthermore, the two elastic wave filters included in the first electronic component 51 may each include at least one of an inductor and a capacitor connected in series with any one of the plurality of series arm resonators. In addition, the two elastic wave filters included in the first electronic component 51 may each include an inductor or a capacitor connected in series with any one of the plurality of parallel arm resonators.

[0073] In addition, when viewed from above in the thickness direction D1 of the mounting substrate 4, the first electronic component 51 including the first transmission filter 121 and the second transmission filter 131 overlaps with the ground electrode 43 of the mounting substrate 4. Here, the first electronic component 51 overlaps with the ground electrode 43 of the mounting substrate 4 when viewed from above in the thickness direction D1 of the mounting substrate 4 means that, when viewed from above in the thickness direction D1 of the mounting substrate 4, there is a region including at least a portion of the first electronic component 51 and at least a portion of the ground electrode 43.

[0074] (3.3) Second electronic component

[0075] Each of the plurality of second electronic components 52 is as follows: Figure 1 As shown in FIG. 1 , the main surface 41 of the mounting substrate 4 is arranged. Figure 1 In the example, each of the plurality of second electronic components 52 is mounted on the main surface 41 of the mounting substrate 4. In addition, a part or all of the plurality of second electronic components 52 may be mounted on the main surface 42 of the mounting substrate 4. The plurality of second electronic components 52 include, for example, a power amplifier 141 and a power amplifier 142.

[0076] (3.4) Third electronic component

[0077] Each third electronic component in the third electronic component 53 is as follows: Figure 1 The third electronic component 53 is mounted on the main surface 41 of the mounting substrate 4. The third electronic component 53 is, for example, a matching circuit 173 (see Figure 3 The matching circuit is a circuit for achieving impedance matching between the first transmission filter 121 and the power amplifier 141. In addition, the third electronic component 53 is, for example, a matching circuit 174 (see Figure 3 ). The matching circuit is a circuit for achieving impedance matching between the second transmission filter 131 and the power amplifier 142. The inductor is, for example, a chip inductor.

[0078] (3.5) Fourth electronic component

[0079] Each fourth electronic component in the fourth electronic component 54 is as follows Figure 1 The fourth electronic component 54 is mounted on the main surface 41 of the mounting substrate 4. The fourth electronic component 54 is, for example, a matching circuit 171 (see Figure 3 ) capacitor. The matching circuit 171 is a circuit for obtaining impedance matching between the first transmission filter 121 and the first reception filter 122 and the antenna 3. In addition, the fourth electronic component 54 is, for example, a matching circuit 172 (see Figure 3 ) capacitor. The matching circuit 172 is a circuit for obtaining impedance matching between the second transmission filter 131 and the second reception filter 132 and the antenna 3. In addition, the fourth electronic component 54 is, for example, a matching circuit 175 (see Figure 3) capacitor. The matching circuit 175 is a circuit for achieving impedance matching between the first reception filter 122 and the low noise amplifier 151. In addition, the fourth electronic component 54 is, for example, a matching circuit 176 (see Figure 3 The matching circuit 176 is a circuit for achieving impedance matching between the second reception filter 132 and the low noise amplifier 152.

[0080] (3.6) Fifth electronic component

[0081] The fifth electronic component 55 is as follows Figure 1 As shown in FIG. 1 , the fifth electronic component 55 is arranged on the principal surface 42 of the mounting substrate 4 . The fifth electronic component 55 includes a low noise amplifier 151 , a low noise amplifier 152 , and a second switch 16 .

[0082] (3.7) Sixth electronic component

[0083] The sixth electronic component 56 is as follows Figure 1 As shown in FIG. 1 , the sixth electronic component 56 is arranged on the principal surface 42 of the mounting substrate 4 . The sixth electronic component 56 is an IC including the first switch 11 .

[0084] (3.8) First Resin Layer, Second Resin Layer, and First Shielding Electrode

[0085] The first resin layer 681 (see Figure 2 ) covers the side surfaces of the first electronic component 51 etc. More specifically, the first resin layer 681 covers at least a portion of the first transmission filter 121 and at least a portion of the second transmission filter 131 in the first electronic component 51 .

[0086] The second resin layer 682 (see Figure 2 ) covers the ground electrode 43 of the mounting substrate 4. More specifically, the second resin layer 682 is located between the first transmission filter 121 in the first electronic component 51 and the ground electrode 43 of the mounting substrate 4.

[0087] The first shielding electrode 69 (see Figure 2 ) covers a portion of the first resin layer 681. More specifically, the first shielding electrode 69 is disposed on the main surface 133 (see FIG. 1 ) of the second transmission filter 131 in the first electronic component 51 on the side opposite to the first transmission filter 121 side. Figure 2 )touch.

[0088] (4) Detailed structure of each component of the high-frequency module

[0089] (4.1) Mounting substrate

[0090] Figure 1 and Figure 2 The mounting substrate 4 shown is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are stacked in the thickness direction D1 of the mounting substrate 4. The plurality of conductive layers are formed into a prescribed pattern determined for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 4. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground layer. In the high-frequency module 1, a plurality of ground terminals are electrically connected to the ground layer via via conductors of the mounting substrate 4, etc. The mounting substrate 4 is, for example, an LTCC (Low Temperature Co-fired Ceramics: low temperature co-fired ceramics) substrate. The mounting substrate 4 is not limited to an LTCC substrate, and may also be, for example, a printed circuit board, an HTCC (High Temperature Co-fired Ceramics: high temperature co-fired ceramics) substrate, or a resin multilayer substrate.

[0091] In addition, the mounting substrate 4 is not limited to the LTCC substrate, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed into a prescribed pattern. In the case of a plurality of insulating layers, the plurality of insulating layers are formed into a prescribed pattern determined for each layer. The conductive layer is formed into a prescribed pattern different from the prescribed pattern of the insulating layer. In the case of a plurality of conductive layers, the plurality of conductive layers are formed into a prescribed pattern determined for each layer. The conductive layer may include one or more rewiring portions. In the wiring structure, the first of the two surfaces facing each other in the thickness direction of the multilayer structure is the main surface 41 of the mounting substrate 4, and the second surface is the main surface 42 of the mounting substrate 4. The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or may be a substrate consisting of multiple layers.

[0092] The main surface 41 and the main surface 42 of the mounting substrate 4 are separated in the thickness direction D1 of the mounting substrate 4 and intersect with the thickness direction D1 of the mounting substrate 4. The main surface 41 of the mounting substrate 4 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 4, but may include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1 of the mounting substrate 4. In addition, the main surface 42 of the mounting substrate 4 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 4, but may include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1 of the mounting substrate 4. In addition, the main surface 41 and the main surface 42 of the mounting substrate 4 may be formed with minute bumps, concave portions, or convex portions.

[0093] (4.2) First electronic component

[0094] illustrate Figure 2The detailed structure of the first electronic component 51 shown in FIG. Figure 1 The following describes the first electronic component 51 including the first transmission filter 121 and the second transmission filter 131 among the first electronic components 51 (two in the figure), but the other first electronic components 51 have the same structure.

[0095] The first electronic component 51 includes a first transmission filter 121 and a second transmission filter 131 as two elastic wave filters. Figure 2 As shown, the first electronic component 51 has a first substrate 61A, a first low acoustic velocity film 62A, a first piezoelectric layer 63A, and a first circuit portion 642A. The first substrate 61A has a main surface 611A and a main surface 612A facing each other in the thickness direction of the first substrate 61A. The first circuit portion 642A includes a plurality of first IDT (Interdigital Transducer) electrodes 641A. In addition, the first circuit portion 642A includes a ground electrode. The ground electrode of the first circuit portion 642A is connected to the ground electrode 43 of the mounting substrate 4. In the present disclosure, the ground electrode of the first circuit portion 642A is electrically connected to the ground electrode 43 of the mounting substrate 4. A portion of the plurality of first IDT electrodes 641A is electrically connected to the ground electrode 43 of the mounting substrate 4 via the ground electrode of the first circuit portion 642A. In the present embodiment, the plurality of first IDT electrodes 641A are first functional electrodes. In addition, in the present embodiment, the ground electrode is a second ground electrode. The first low acoustic velocity film 62A is provided on the main surface 611A of the first substrate 61A. That is, in the present embodiment, the first substrate 61A is a first supporting member. A plurality of first IDT electrodes 641A are provided on the first piezoelectric layer 63A. The first transmission filter 121 includes the first substrate 61A, the first low acoustic velocity film 62A, the first piezoelectric layer 63A, a plurality of first IDT electrodes 641A, and a first circuit unit 642A.

[0096] like Figure 2As shown, the first electronic component 51 also has a second substrate 61B, a second low acoustic velocity film 62B, a second piezoelectric layer 63B and a second circuit portion 642B. The second substrate 61B has a main surface 611B and a main surface 612B facing each other in the thickness direction of the second substrate 61B. The second circuit portion 642B includes a plurality of second IDT electrodes 641B. In addition, the second circuit portion 642B includes a ground electrode. The ground electrode of the second circuit portion 642B is connected to the ground electrode 43 of the mounting substrate 4. In the present disclosure, the ground electrode of the second circuit portion 642B is electrically connected to the ground electrode 43 of the mounting substrate 4. In the present embodiment, the plurality of second IDT electrodes 641B are second functional electrodes. In addition, in the present embodiment, the ground electrode is a third ground electrode. The second low acoustic velocity film 62B is provided on the main surface 611B of the second substrate 61B. That is, in the present embodiment, the second substrate 61B is a second supporting member. The plurality of second IDT electrodes 641B are provided on the second piezoelectric layer 63B. The second transmission filter 131 includes a second substrate 61B, a second low acoustic velocity film 62B, a second piezoelectric layer 63B, and a second circuit unit 642B. In the second transmission filter 131, the principal surface 133 on the opposite side to the first transmission filter 121 is the principal surface 612B of the second substrate 61B.

[0097] The material of the first piezoelectric layer 63A and the second piezoelectric layer 63B is, for example, lithium niobate or lithium tantalate. The material of the first low-acoustic-velocity film 62A and the second low-acoustic-velocity film 62B is, for example, silicon oxide. In the first low-acoustic-velocity film 62A, the acoustic velocity of the body wave propagating in the first low-acoustic-velocity film 62A is lower than the acoustic velocity of the body wave propagating in the first piezoelectric layer 63A. In addition, in the second low-acoustic-velocity film 62B, the acoustic velocity of the body wave propagating in the second low-acoustic-velocity film 62B is lower than the acoustic velocity of the body wave propagating in the second piezoelectric layer 63B. The material of the first low-acoustic-velocity film 62A and the second low-acoustic-velocity film 62B is not limited to silicon oxide, and may be, for example, silicon oxide, glass, silicon oxynitride, tantalum oxide, a compound obtained by adding fluorine, carbon or boron to silicon oxide, or a material having the above materials as main components.

[0098] Each of the first substrate 61A and the second substrate 61B is, for example, a silicon substrate. That is, the material of the first substrate 61A and the second substrate 61B of the first electronic component 51 is silicon. In the first substrate 61A, the acoustic velocity of the body wave propagating in the first substrate 61A is higher than the acoustic velocity of the body wave propagating in the first piezoelectric layer 63A. Here, the body wave propagating in the first substrate 61A refers to the body wave with the lowest acoustic velocity among the plurality of body waves propagating in the first substrate 61A. In this embodiment, the high acoustic velocity member is constituted by the first substrate 61A and the first low acoustic velocity film 62A provided on the first substrate 61A. In addition, in this embodiment, the first substrate 61A is a first supporting substrate constituted by a silicon substrate. Similarly, in the second substrate 61B, the acoustic velocity of the body wave propagating in the second substrate 61B is higher than the acoustic velocity of the body wave propagating in the second piezoelectric layer 63B. Here, the body wave propagating in the second substrate 61B refers to the body wave with the lowest acoustic velocity among the plurality of body waves propagating in the second substrate 61B. In addition, in the present embodiment, the second substrate 61B is a second support substrate composed of a silicon substrate. In addition, the materials of the first substrate 61A and the second substrate 61B are not limited to silicon, and may be, for example, a material containing any one of aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, sapphire, lithium tantalate, lithium niobate, quartz, alumina, zirconium oxide, cordierite, mullite, talc, forsterite, magnesium oxide, and diamond as a main component.

[0099] The main surface 611A of the first substrate 61A and the main surface 611B of the second substrate 61B face each other in the first direction D1. That is, the second transmission filter 131 is arranged on the first transmission filter 121. Figure 2 As shown, the first electronic component 51 also includes a plurality of conductors 661 extending in a direction intersecting the first direction D1, and a frame 662. The plurality of conductors 661 and the frame 662 are electrodes for electrically connecting the second transmission filter 131 to the mounting substrate 4. The plurality of conductors 661, for example, include columnar (e.g., prism-shaped) electrodes. In addition, the frame 662 is a frame-shaped electrode. The material of the plurality of conductors 661 and the frame 662 is, for example, a metal (e.g., copper, copper alloy, etc.). The plurality of conductors 661 and the frame 662 are located between the first substrate 61A and the second substrate 61B. A hollow space SP0 is formed inside the frame 662 between the first substrate 61A and the second substrate 61B. The plurality of first IDT electrodes 641A and the plurality of second IDT electrodes 641B are arranged in the hollow space SP0. In addition, at least a portion of the plurality of conductors 661 or the frame 662 is connected to the ground electrode 43 of the mounting substrate 4 via the via conductor 671 and the bump 672 that penetrate the first substrate 61A. In addition, the frame 662 may not be an electrode. In the case where the frame 662 is not an electrode, the material of the frame 662 may be an insulator such as resin.

[0100] In addition, if Figure 2 As shown, the first electronic component 51 further includes a second shielding electrode 65. The second shielding electrode 65 is, for example, a shielding electrode provided for the purpose of electromagnetic shielding between the first IDT electrode 641A and the second IDT electrode 641B. The second shielding electrode 65 is a metal layer, but is not limited to a metal layer, and may also be a multilayer structure in which a plurality of metal layers are stacked. The second shielding electrode 65 is located in the hollow space SP0 and covers at least one of the first IDT electrode 641A and the second IDT electrode 641B. The second shielding electrode 65 in Embodiment 1 covers the second IDT electrode 641B. More specifically, when viewed from the first direction D1, the second shielding electrode 65 overlaps with the first IDT electrode 641A and overlaps with the second IDT electrode 641B. The second shielding electrode 65 divides the hollow space SP0 into a first space SP1 and a second space SP2. The first IDT electrode 641A is located in the first space SP1, and the second IDT electrode 641B is located in the second space SP2. In addition, the first space SP1 and the second space SP2 do not need to be completely isolated by the second shielding electrode 65 , and the first space SP1 and the second space SP2 may communicate with each other on the surface of the second piezoelectric layer 63B.

[0101] (4.3) Resin layer

[0102] Next, the relationship between the first resin layer 681 and the second resin layer 682 and the first electronic component 51 will be described in detail.

[0103] The first resin layer 681 covers at least a portion of the first transmission filter 121 and at least a portion of the second transmission filter 131 in the first electronic component 51. Here, the first resin layer 681 covers the outer peripheral surfaces of the first substrate 61A, the first low acoustic velocity film 62A, the first piezoelectric layer 63A, the conductor 661, the frame 662, the second piezoelectric layer 63B, the second low acoustic velocity film 62B, and the second substrate 61B.

[0104] The second resin layer 682 is located between the first substrate 61A and the mounting substrate 4 in the first electronic component 51. More specifically, the second resin layer 682 is disposed between the principal surface 612A of the first substrate 61A and the principal surface 41 of the mounting substrate 4. Here, the second resin layer 682 may be located on the ground electrode 43 of the mounting substrate 4.

[0105] The first resin layer 681 and the second resin layer 682 include resin (eg, epoxy resin). The first resin layer 681 and the second resin layer 682 may include fillers in addition to the resin.

[0106] (4.4) First shielding electrode

[0107] Next, the relationship between the first shielding electrode 69 and the first electronic component 51 will be described in detail.

[0108] The first shield electrode 69 covers at least a portion of the first resin layer 681. Here, the first shield electrode 69 is in contact with the main surface 133 of the second transmission filter 131 in the first electronic component 51.

[0109] The first shield electrode 69 has a multi-layer structure in which a plurality of metal layers are stacked, but is not limited to a multi-layer structure, and may be a single metal layer. A single metal layer includes one or more metals.

[0110] (5)Communication device

[0111] like Figure 3 As shown, the communication device 10 includes a high-frequency module 1 , an antenna 3 , and a signal processing circuit 2 .

[0112] (5.1) Antenna

[0113] Antenna 3 is connected to antenna terminal 181 of high frequency module 1. Antenna 3 has a transmission function of radiating a transmission signal output from high frequency module 1 as a radio wave, and a reception function of receiving a reception signal as a radio wave from the outside and outputting it to high frequency module 1.

[0114] (5.2) Signal processing circuit

[0115] The signal processing circuit 2 includes an RF signal processing circuit 21 and a baseband signal processing circuit 22. The signal processing circuit 2 processes the signal passing through the high frequency module 1. More specifically, the signal processing circuit 2 processes the transmission signal and the reception signal.

[0116] The RF signal processing circuit 21 is, for example, a RFIC (Radio Frequency Integrated Circuit) and performs signal processing on a high frequency signal.

[0117] The RF signal processing circuit 21 performs signal processing such as up-conversion on the high frequency signal output from the baseband signal processing circuit 22, and outputs the high frequency signal after the signal processing to the high frequency module 1. Specifically, the RF signal processing circuit 21 performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 22, and outputs the transmission signal after the signal processing to the first input terminal 182 or the second input terminal 183 of the high frequency module 1.

[0118] The RF signal processing circuit 21 performs signal processing such as down-conversion on the high frequency signal output from the high frequency module 1, and outputs the high frequency signal after the signal processing to the baseband signal processing circuit 22. Specifically, the RF signal processing circuit 21 performs signal processing on the reception signal output from the output terminal 184 of the high frequency module 1, and outputs the reception signal after the signal processing to the baseband signal processing circuit 22.

[0119] The baseband signal processing circuit 22 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 22 performs predetermined signal processing on a transmission signal from outside the signal processing circuit 2. The reception signal processed by the baseband signal processing circuit 22 is used as an image signal for displaying an image, for example, as an image signal, or as a voice signal for a call.

[0120] In addition, the RF signal processing circuit 21 also has a function as a control unit that controls each of the first switch 11 and the second switch 16 of the high-frequency module 1 based on the transmission and reception of the high-frequency signal (transmission signal, reception signal). Specifically, the RF signal processing circuit 21 switches the connection of each of the first switch 11 and the second switch 16 of the high-frequency module 1 through a control signal (not shown). In addition, the control unit may be provided outside the RF signal processing circuit 21, for example, it may be provided in the high-frequency module 1 or the baseband signal processing circuit 22.

[0121] (6) Details of the First Shielding Electrode and the Second Shielding Electrode

[0122] Next, the details of the first shielding electrode 69 and the second shielding electrode 65 will be described with reference to the drawings.

[0123] like Figure 2 As shown, in the high-frequency module 1 according to the first embodiment, the main surface 133 of the second transmission filter 131 on the side opposite to the first transmission filter 121 is in contact with the first shielding electrode 69. As a result, the heat generated by the second transmission filter 131 is dissipated toward the first shielding electrode 69. Therefore, the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 can be reduced.

[0124] In the high-frequency module 1 according to the first embodiment, the first IDT electrode 641A is electrically connected to the ground electrode 43 of the mounting substrate 4. Therefore, the heat generated by the first IDT electrode 641A is dissipated to the ground electrode 43 of the mounting substrate 4 through the electrical connection. In the high-frequency module 1 according to the first embodiment, the ground electrode of the first transmission filter 121 and the ground electrode of the second transmission filter 131 are connected to the ground electrode 43 of the mounting substrate 4 via the conductor 661, the frame 662, the via conductor 671, and the bump 672. Therefore, the heat generated by the first IDT electrode 641A is easily dissipated to the ground electrode 43 of the mounting substrate 4 that is electrically connected. In addition, in the high-frequency module 1 according to the first embodiment, the second resin layer 682 is present between the first transmission filter 121 and the ground electrode 43 of the mounting substrate 4. In the high-frequency module 1 according to the first embodiment, the first transmission filter 121 overlaps with the ground electrode 43 of the mounting substrate 4 when viewed from the thickness direction D1 of the mounting substrate 4. Therefore, the heat generated by the first IDT electrode 641A can be easily dissipated to the ground electrode 43 of the electrically connected mounting substrate 4. Thus, the influence of the heat generated by the first transmission filter 121 on the second transmission filter 131 can be reduced.

[0125] In addition, if Figure 2 As shown, in the high frequency module 1 according to the first embodiment, the second shielding electrode 65 covers the second IDT electrode 641B. Thus, the second shielding electrode 65 functions as a shield between the first space SP1 where the first IDT electrode 641A is located and the second space SP2 where the second IDT electrode 641B is located. Therefore, the movement of heat between the first transmission filter 121 and the second transmission filter 131 can be blocked. In addition, the isolation between the first transmission filter 121 and the second transmission filter 131 can be improved.

[0126] (7) Effect

[0127] In the high frequency module 1 according to the first embodiment, the first resin layer 681 covers at least a portion of the first transmission filter 121 and at least a portion of the second transmission filter 131, and the first shielding electrode 69 covers at least a portion of the first resin layer 681. Therefore, heat generated by the first transmission filter 121 and the second transmission filter 131 can be dissipated via the first shielding electrode 69.

[0128] In the high-frequency module 1 according to the first embodiment, the first shielding electrode 69 is in contact with the main surface 133 of the second transmission filter 131 on the side opposite to the first transmission filter 121. Therefore, the heat generated by the elastic wave resonator of the second transmission filter 131 is dissipated from the first shielding electrode 69. Therefore, the heat dissipation of the second transmission filter 131 can be improved, and the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 can be reduced.

[0129] In the high-frequency module 1 according to the first embodiment, the conductor 661 located between the second substrate 61B and the first substrate 61A and the via conductor 671 penetrating the first substrate 61A in the first direction D1 are connected to the ground electrode 43 of the mounting substrate 4. Therefore, the conductor 661 and the via conductor 671 function as a heat conduction path from the first IDT electrode 641A to the ground electrode 43. Therefore, the conduction of heat generated by the first transmission filter 121 to the second transmission filter 131 can be reduced.

[0130] In addition, in the high-frequency module 1 according to the first embodiment, the maximum output power of the power level of the signal passing through the second transmission filter 131 is higher than the maximum output power of the power level of the signal passing through the first transmission filter 121. Therefore, the heat generated by the second transmission filter 131 is greater than the heat generated by the first transmission filter 121. As described above, in the high-frequency module 1 according to the first embodiment, the heat generated by the second transmission filter 131 is dissipated from the first shielding electrode 69, so the heat dissipation of the second transmission filter 131 is higher than the heat dissipation of the first transmission filter 121. Therefore, the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 and the second transmission filter 131 can be reduced.

[0131] In the high frequency module 1 according to the first embodiment, the second shielding electrode 65 is located in the hollow space SP0 and covers at least one of the first IDT electrode 641A as the first functional electrode and the second IDT electrode 641B as the second functional electrode. Therefore, the heat transfer between the first transmission filter 121 and the second transmission filter 131 can be blocked. In addition, the isolation between the first transmission filter 121 and the second transmission filter 131 can be improved.

[0132] (Implementation Method 2)

[0133] A high-frequency module 1 according to Embodiment 2 will be described. In the high-frequency module 1 according to Embodiment 2, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0134] The high-frequency module 1 according to the second embodiment includes a first electronic component 51a instead of the first electronic component 51. Figure 4 As shown, the first electronic component 51 a includes a BAW (Bulk Acoustic Wave) filter as each of the first transmission filter 121 and the second transmission filter 131 .

[0135] The detailed structure of the first electronic component 51a is described below. Figure 4 As shown, the first electronic component 51a has a first substrate 61A, a first upper electrode 643A, a first piezoelectric film 644A and a first lower electrode 645A. In the present embodiment, the first upper electrode 643A is a first functional electrode. The material of the first piezoelectric film 644A is, for example, AlN, ScAlN or PZT (lead zirconate titanate). There is a cavity 646A between the first lower electrode 645A and the first substrate 61A. The BAW resonator included in the first transmission filter 121 is a FBAR (Film Bulk Acoustic Resonator), but is not limited to this and may also be an SMR (Solidly Mounted Resonator). The first transmission filter 121 includes a first substrate 61A, a first upper electrode 643A, a first piezoelectric film 644A and a first lower electrode 645A. The first upper electrode 643A, the first piezoelectric film 644A, and the first lower electrode 645A are located in a hollow space SP0 formed between the principal surface 611A of the first substrate 61A and the principal surface 611B of the second substrate 61B.

[0136] In addition, if Figure 4 As shown, the first electronic component 51a has a second substrate 61B, a second upper electrode 643B, a second piezoelectric film 644B and a second lower electrode 645B. In the present embodiment, the second upper electrode 643B is a second functional electrode. The material of the second piezoelectric film 644B is, for example, AlN, ScAlN or PZT. There is a cavity 646B between the second lower electrode 645B and the second substrate 61B. The BAW resonator included in the second transmission filter 131 is FBAR, but is not limited to this, and can also be SMR. The second transmission filter 131 includes a second substrate 61B, a second upper electrode 643B, a second piezoelectric film 644B and a second lower electrode 645B. The second upper electrode 643B, the second piezoelectric film 644B and the second lower electrode 645B are located in the hollow space SP0.

[0137] In the high frequency module 1 according to the second embodiment, the first resin layer 681 covers at least a portion of the first transmission filter 121 and at least a portion of the second transmission filter 131, and the first shielding electrode 69 covers at least a portion of the first resin layer 681. Therefore, heat generated by the first transmission filter 121 and the second transmission filter 131 can be dissipated via the first shielding electrode 69.

[0138] In the high frequency module 1 according to the second embodiment, the first shielding electrode 69 is in contact with the main surface 133 of the second transmission filter 131. Therefore, the heat generated by the BAW resonator of the second transmission filter 131 is dissipated from the first shielding electrode 69. Therefore, the heat dissipation of the second transmission filter 131 can be improved, and the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 can be reduced.

[0139] In the high-frequency module 1 according to the second embodiment, the conductor 661 located between the second substrate 61B and the first substrate 61A and the via conductor 671 penetrating the first substrate 61A in the first direction D1 are connected to the ground electrode 43 of the mounting substrate 4. Therefore, the conductor 661 and the via conductor 671 function as a heat conduction path from the first upper electrode 643A to the ground electrode 43. Therefore, the conduction of heat generated by the first transmission filter 121 to the second transmission filter 131 can be reduced.

[0140] In addition, in the high-frequency module 1 according to the second embodiment, the maximum output power of the power level of the signal passing through the second transmission filter 131 is higher than the maximum output power of the power level of the signal passing through the first transmission filter 121. Therefore, the heat generated by the second transmission filter 131 is greater than the heat generated by the first transmission filter 121. As described above, in the high-frequency module 1 according to the second embodiment, the heat generated by the second transmission filter 131 is dissipated from the first shielding electrode 69, so the heat dissipation of the second transmission filter 131 is higher than the heat dissipation of the first transmission filter 121. Therefore, the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 and the second transmission filter 131 can be reduced.

[0141] In the high frequency module 1 according to the second embodiment, the second shielding electrode 65 covers one of the first upper electrode 643A and the second upper electrode 643B. Therefore, in the high frequency module 1 according to the second embodiment, it is possible to prevent heat transfer between the first transmission filter 121 and the second transmission filter 131. In addition, it is possible to improve the isolation between the first transmission filter 121 and the second transmission filter 131.

[0142] (Implementation method 3)

[0143] A high-frequency module 1 according to Embodiment 3 will be described. In the high-frequency module 1 according to Embodiment 3, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0144] The high-frequency module 1 according to the third embodiment includes a first electronic component 51b instead of the first electronic component 51. Figure 5 As shown, the first electronic component 51b includes a first transmission filter 121 and a second transmission filter 131. Each of the first transmission filter 121 and the second transmission filter 131 is, for example, an elastic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators.

[0145] The detailed structure of the first electronic component 51b is described below. Figure 5 As shown, the first electronic component 51b includes a first substrate 61A, a first low acoustic velocity film 62A, a first piezoelectric layer 63A, and a first circuit unit 642A. The first substrate 61A includes a main surface 611A and a main surface 612A facing each other in the thickness direction of the first substrate 61A. The first circuit unit 642A includes a plurality of first IDT electrodes 641A. In the present embodiment, the plurality of first IDT electrodes 641A are first functional electrodes. The first low acoustic velocity film 62A is disposed on the main surface 611A of the first substrate 61A. The plurality of first IDT electrodes 641A are disposed on the first piezoelectric layer 63A. The first transmission filter 121 includes a first substrate 61A, a first low acoustic velocity film 62A, a first piezoelectric layer 63A, a plurality of first IDT electrodes 641A, and a first circuit unit 642A.

[0146] like Figure 5 As shown, the first electronic component 51b also has a second substrate 61B, a second low acoustic velocity film 62B, a second piezoelectric layer 63B and a second circuit unit 642B. The second substrate 61B has a main surface 611B and a main surface 612B facing each other in the thickness direction of the second substrate 61B. The second circuit unit 642B includes a plurality of second IDT electrodes 641B. In this embodiment, the plurality of second IDT electrodes 641B are second functional electrodes. The second low acoustic velocity film 62B is provided on the main surface 611B of the second substrate 61B. The second transmission filter 131 includes a second substrate 61B, a second low acoustic velocity film 62B, a second piezoelectric layer 63B, a plurality of second IDT electrodes 641B and a second IDT electrode 641B.

[0147] The main surface 611A of the first substrate 61A faces the main surface 41 of the mounting substrate 4 in the first direction D1. Figure 5As shown, the first electronic component 51b includes a plurality of bumps 672. The plurality of bumps 672 are electrodes for electrically connecting the first transmission filter 121 to the mounting substrate 4. In addition, at least a portion of the plurality of bumps 672 is connected to the ground electrode 43 of the mounting substrate 4. The plurality of first IDT electrodes 641A are arranged in a space formed between the first substrate 61A and the mounting substrate 4.

[0148] In addition, the main surface 611B of the second substrate 61B faces the main surface 612A of the first substrate 61A in the first direction D1. Figure 5 As shown, the first electronic component 51b includes a plurality of conductors 673 and a plurality of bumps 674. The plurality of conductors 673 and the plurality of bumps 674 are electrodes for electrically connecting the second transmission filter 131 to the mounting substrate 4. In addition, at least a portion of the plurality of conductors 673 and the plurality of bumps 674 is connected to the ground electrode 43 of the mounting substrate 4. The plurality of second IDT electrodes 641B are arranged in a space formed between the first substrate 61A and the second substrate 61B. In addition, the main surface 133 of the second transmission filter 131 on the side opposite to the first transmission filter 121 side is the main surface 612B of the second substrate 61B.

[0149] In the first electronic component 51b, the first resin layer 681 covers at least a portion of the first transmission filter 121 and at least a portion of the second transmission filter 131. Here, the first resin layer 681 covers the conductors 673, the bumps 674, and the outer peripheral surface of the second substrate 61B.

[0150] The first shield electrode 69 covers at least a portion of the first resin layer 681. Here, the first shield electrode 69 is in contact with the main surface 133 of the second transmission filter 131 on the opposite side to the first transmission filter 121 side in the first electronic component 51b.

[0151] In the high frequency module 1 according to the third embodiment, the first substrate 61A is located between the first IDT electrode 641A as the first functional electrode and the second IDT electrode 641B as the second functional electrode. Therefore, the first substrate 61A functions as a shield between the first IDT electrode 641A and the second IDT electrode 641B. Therefore, the transfer of heat between the first transmission filter 121 and the second transmission filter 131 can be blocked. In addition, the isolation between the first transmission filter 121 and the second transmission filter 131 can be improved.

[0152] In the high frequency module 1 according to the third embodiment, the first resin layer 681 covers the outer peripheral surfaces of the conductor 673, the bump 674, and the second substrate 61B, and the first shielding electrode 69 covers at least a portion of the first resin layer 681. Therefore, the heat generated by the second transmission filter 131 can be dissipated via the first shielding electrode 69.

[0153] In the high-frequency module 1 according to the third embodiment, the first shielding electrode 69 is in contact with the main surface 133 of the second transmission filter 131 on the side opposite to the first transmission filter 121. Therefore, the heat generated by the elastic wave resonator of the second transmission filter 131 is dissipated from the first shielding electrode 69. Therefore, the heat dissipation of the second transmission filter 131 can be improved, and the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 can be reduced.

[0154] In the high frequency module 1 according to the third embodiment, the first IDT electrode 641A faces the ground electrode 43 of the mounting substrate 4. Therefore, heat conduction from the first IDT electrode 641A to the ground electrode 43 becomes easy. Therefore, conduction of heat generated by the first transmission filter 121 to the second transmission filter 131 can be reduced.

[0155] In addition, in the high-frequency module 1 according to the third embodiment, the maximum output power of the power level of the signal passing through the second transmission filter 131 is higher than the maximum output power of the power level of the signal passing through the first transmission filter 121. Therefore, the heat generated by the second transmission filter 131 is greater than the heat generated by the first transmission filter 121. As described above, in the high-frequency module 1 according to the third embodiment, the heat generated by the second transmission filter 131 is dissipated from the first shielding electrode 69, so the heat dissipation of the second transmission filter 131 is higher than the heat dissipation of the first transmission filter 121. Therefore, the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 and the second transmission filter 131 can be reduced.

[0156] (Implementation 4)

[0157] A high-frequency module 1 according to a fourth embodiment will be described. In the high-frequency module 1 according to the fourth embodiment, the same components as those of the high-frequency module 1 according to the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

[0158] The high-frequency module 1 according to the fourth embodiment includes a first electronic component 51c instead of the first electronic component 51. Figure 6 As shown, in the first electronic component 51 c , the main surface 133 of the second transmission filter 131 on the side opposite to the first transmission filter 121 is not in contact with the first shielding electrode 69 .

[0159] The detailed structure of the first electronic component 51c is described. The first electronic component 51c includes a first transmission filter 121 and a second transmission filter 131 as two elastic wave filters. The first transmission filter 121 includes a first substrate 61A, a first low acoustic velocity film 62A, a first piezoelectric layer 63A, and a first circuit unit 642A. The second transmission filter 131 includes a second substrate 61B, a second low acoustic velocity film 62B, a second piezoelectric layer 63B, and a second circuit unit 642B. In addition, the main surface 133 on the side opposite to the first transmission filter 121 side in the second transmission filter 131 is the main surface 612B of the second substrate 61B.

[0160] The first electronic component 51c further includes a first resin layer 681. The first resin layer 681 covers the outer peripheral surfaces of the first substrate 61A, the first low acoustic velocity film 62A, the first piezoelectric layer 63A, the conductor 661, the frame 662, the second piezoelectric layer 63B, the second low acoustic velocity film 62B, and the second substrate 61B. The first resin layer 681 also covers the main surface 612B of the second substrate 61B. That is, the first resin layer 681 covers the main surface 133 of the second transmission filter 131 on the side opposite to the first transmission filter 121 side.

[0161] The first electronic component 51c further includes a first shielding electrode 69. The first shielding electrode 69 covers at least a portion of the first resin layer 681. Here, the first shielding electrode 69 indirectly covers the main surface 133 of the second transmission filter 131. That is, a portion of the first resin layer 681 is located between the first shielding electrode 69 and the main surface 133 of the second transmission filter 131.

[0162] In the high frequency module 1 according to the fourth embodiment, the first resin layer 681 covers at least a portion of the first transmission filter 121 and at least a portion of the second transmission filter 131, and the first shielding electrode 69 covers at least a portion of the first resin layer 681. Therefore, heat generated by the first transmission filter 121 and the second transmission filter 131 can be dissipated via the first shielding electrode 69.

[0163] In the high-frequency module 1 according to the fourth embodiment, the first shielding electrode 69 indirectly covers the main surface 133 of the second transmission filter 131 on the side opposite to the first transmission filter 121 side. Therefore, the heat generated by the elastic wave resonator of the second transmission filter 131 is dissipated from the first shielding electrode 69. Therefore, the heat dissipation of the second transmission filter 131 can be improved, and the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 can be reduced.

[0164] In the high-frequency module 1 according to the fourth embodiment, the conductor 661 located between the second substrate 61B and the first substrate 61A and the via conductor 671 penetrating the first substrate 61A in the first direction D1 are connected to the ground electrode 43 of the mounting substrate 4. Therefore, the conductor 661 and the via conductor 671 function as a heat conduction path from the first IDT electrode 641A to the ground electrode 43. Therefore, the conduction of heat generated by the first transmission filter 121 to the second transmission filter 131 can be reduced.

[0165] In addition, in the high-frequency module 1 according to the fourth embodiment, the maximum output power of the power level of the signal passing through the second transmission filter 131 is higher than the maximum output power of the power level of the signal passing through the first transmission filter 121. Therefore, the heat generated by the second transmission filter 131 is greater than the heat generated by the first transmission filter 121. As described above, in the high-frequency module 1 according to the fourth embodiment, the heat generated by the second transmission filter 131 is dissipated from the first shielding electrode 69, so the heat dissipation of the second transmission filter 131 is higher than the heat dissipation of the first transmission filter 121. Therefore, the influence of the heat generated by the second transmission filter 131 on the first transmission filter 121 and the second transmission filter 131 can be reduced.

[0166] In the high frequency module 1 according to the fourth embodiment, the second shielding electrode 65 is located in the hollow space SP0 and covers at least one of the first IDT electrode 641A as the first functional electrode and the second IDT electrode 641B as the second functional electrode. Therefore, the heat transfer between the first transmission filter 121 and the second transmission filter 131 can be blocked. In addition, the isolation between the first transmission filter 121 and the second transmission filter 131 can be improved.

[0167] (Implementation method 5)

[0168] A high-frequency module 1 a according to Embodiment 5 will be described. In the high-frequency module 1 a according to Embodiment 5, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0169] In the high-frequency module 1a involved in embodiment 5, the transmission signal and the reception signal of the first communication frequency band are TDD (Time Division Duplex) signals. In addition, the transmission signal and the reception signal of the second communication frequency band are TDD signals. TDD is a wireless communication technology that allocates the same frequency band to transmission and reception in wireless communication, and performs transmission and reception according to time switching. In addition, the communication in the first communication frequency band and the communication in the second communication frequency band are asynchronous communications. In addition, the communication in the first communication frequency band and the communication in the second communication frequency band can also be synchronous communications in which the transmission period of the first communication frequency band overlaps with the reception period of the second communication frequency band in time.

[0170] The first communication frequency band is, for example, Band 39 of the 3GPP LTE standard. In addition, the second communication frequency band is, for example, Band 41 of the 3GPP LTE standard. The transmission signal of Band 39 is a signal of power level 3, and the transmission signal of Band 41 is a signal of power level 2. The maximum output power of the signal of power level 2 is greater than the maximum output power of the signal of power level 3. That is, the maximum output power of the transmission signal of the second communication frequency band is greater than the maximum output power of the transmission signal of the first communication frequency band. The maximum output power is measured, for example, by a method specified by 3GPP or the like.

[0171] like Figure 7 As shown, the high-frequency module 1a according to the fifth embodiment includes a first filter 12 and a second filter 13 instead of the first transmission filter 121, the first reception filter 122, the second transmission filter 131, and the second reception filter 132. In addition, the high-frequency module 1a includes a third switch 19 and a fourth switch 23. In addition, the high-frequency module 1a includes an antenna terminal 181, a first input terminal 182, a second input terminal 183, a first output terminal 185, and a second output terminal 186 as a plurality of external connection terminals 18.

[0172] The first filter 12 and the second filter 13 are filters that pass signals of different frequency bands. More specifically, the first filter 12 is a filter that passes transmission signals and reception signals of a first communication frequency band. The second filter 13 is a filter that passes transmission signals and reception signals of a second communication frequency band.

[0173] The first filter 12 and the second filter 13 are elastic wave filters having one or more elastic wave resonators, similarly to the first transmission filter 121 and the second transmission filter 131. That is, in the present embodiment, the first filter 12 is a first elastic wave filter. In addition, in the present embodiment, the second filter 13 is a second elastic wave filter. The first filter 12 and the second filter 13 are included in a single first electronic component 51, similarly to the first transmission filter 121 and the second transmission filter 131.

[0174] The third switch 19 is a switch for switching the path connected to the third switch 19 from the power amplifier 141 and the low noise amplifier 151. That is, the third switch 19 is a switch for switching the path connected to the first filter 12. The third switch 19 has a common terminal 190 and a plurality of (two in the example shown) selection terminals 191 and 192.

[0175] The common terminal 190 is connected to the first filter 12. The selection terminal 191 is connected to the power amplifier 141. In addition, the selection terminal 192 is connected to the low noise amplifier 151.

[0176] The third switch 19 switches the connection between the common terminal 190 and the plurality of selection terminals 191 and 192. The third switch 19 is controlled, for example, by the signal processing circuit 2. The third switch 19 electrically connects the common terminal 190 to any one of the plurality of selection terminals 191 and 192 in accordance with a control signal from the RF signal processing circuit 21 of the signal processing circuit 2.

[0177] The fourth switch 23 is a switch for switching the path connected to the fourth switch 23 from the power amplifier 142 and the low noise amplifier 152. In other words, the fourth switch 23 is a switch for switching the path connected to the fourth switch 23. The fourth switch 23 has a common terminal 230 and a plurality of (two in the example shown) selection terminals 231 and 232.

[0178] The common terminal 230 is connected to the second filter 13. The selection terminal 231 is connected to the power amplifier 142. In addition, the selection terminal 232 is connected to the low noise amplifier 152.

[0179] The fourth switch 23 switches the connection between the common terminal 230 and the plurality of selection terminals 231 and 232. The fourth switch 23 is controlled by, for example, the signal processing circuit 2. The fourth switch 23 electrically connects the common terminal 230 to any one of the plurality of selection terminals 231 and 232 according to a control signal from the RF signal processing circuit 21 of the signal processing circuit 2.

[0180] The plurality of external connection terminals 18 are terminals for electrically connecting to an external circuit (e.g., the signal processing circuit 2). The plurality of external connection terminals 18 include an antenna terminal 181, a first input terminal 182, a second input terminal 183, a first output terminal 185, a second output terminal 186, a plurality of control terminals (not shown), and a plurality of ground terminals (not shown).

[0181] The first output terminal 185 is a terminal for outputting the received signal from the high frequency module 1 to an external circuit (for example, the signal processing circuit 2). More specifically, the first output terminal 185 is used to output the received signal of the first communication frequency band. In the high frequency module 1, the first output terminal 185 is connected to the low noise amplifier 151.

[0182] The second output terminal 186 is a terminal for outputting the received signal from the high frequency module 1 to an external circuit (e.g., the signal processing circuit 2). More specifically, the second output terminal 186 is used to output the received signal of the second communication frequency band. In the high frequency module 1, the second output terminal 186 is connected to the low noise amplifier 152.

[0183] The high-frequency module 1a includes a first electronic component 51. The first electronic component 51 includes a first filter 12 instead of a first transmission filter 121. In addition, the first electronic component 51 includes a second filter 13 instead of a second transmission filter 131. That is, in this embodiment, the first filter 12 is a first elastic wave filter. In addition, in this embodiment, the second filter 13 is a second elastic wave filter.

[0184] The high-frequency module 1a includes a sixth electronic component 56. The sixth electronic component 56 is an IC including the third switch 19 and the fourth switch 23. When viewed in plan from the thickness direction D1 of the mounting substrate 4, the first electronic component 51 and the sixth electronic component overlap.

[0185] In the high frequency module 1a according to the fifth embodiment, the first resin layer 681 covers at least a portion of the first filter 12 and at least a portion of the second filter 13, and the first shielding electrode 69 covers at least a portion of the first resin layer 681. Therefore, heat generated by the first filter 12 and the second filter 13 can be dissipated via the first shielding electrode 69.

[0186] In the high-frequency module 1a according to the fifth embodiment, the first shielding electrode 69 is in contact with the main surface 133 of the second filter 13 on the side opposite to the first filter 12. Therefore, the heat generated by the elastic wave resonator of the second filter 13 is dissipated from the first shielding electrode 69. Therefore, the heat dissipation of the second filter 13 can be improved, and the influence of the heat generated by the second filter 13 on the first filter 12 can be reduced.

[0187] In the high-frequency module 1a according to the fifth embodiment, the conductor 661 located between the second substrate 61B and the first substrate 61A and the via conductor 671 penetrating the first substrate 61A in the first direction D1 are connected to the ground electrode 43 of the mounting substrate 4. Therefore, the conductor 661 and the via conductor 671 function as a heat conduction path from the first IDT electrode 641A to the ground electrode 43. Therefore, the conduction of heat generated by the first filter 12 to the second filter 13 can be reduced.

[0188] In addition, in the high frequency module 1a according to the fifth embodiment, the maximum output power of the power level of the transmission signal passing through the second filter 13 is higher than the maximum output power of the power level of the transmission signal passing through the first filter 12. Therefore, the heat generated by the second filter 13 is greater than the heat generated by the first filter 12. As described above, the heat generated by the second filter 13 is dissipated from the first shielding electrode 69, so the heat dissipation of the second filter 13 is higher than the heat dissipation of the first filter 12. Therefore, the influence of the heat generated by the second filter 13 on the first filter 12 and the second filter 13 can be reduced.

[0189] In the high frequency module 1a according to the fifth embodiment, the second shielding electrode 65 is located in the hollow space SP0 and covers at least one of the first IDT electrode 641A as the first functional electrode and the second IDT electrode 641B as the second functional electrode. Therefore, the heat transfer between the first transmission filter 121 and the second transmission filter 131 can be blocked. In addition, the isolation between the first filter 12 and the second filter 13 can be improved.

[0190] In addition, in the high-frequency module 1a according to the fifth embodiment, when viewed from the thickness direction D1 of the mounting substrate 4, the first electronic component 51 including the first filter 12 and the second filter 13 overlaps with the sixth electronic component including the third switch 19 and the fourth switch 23. Therefore, the wiring between the first filter 12 and the third switch 19 is shortened. Similarly, the wiring between the second filter 13 and the fourth switch 23 is shortened. Therefore, the signal quality of the signal passing through the first filter 12 and the signal passing through the second filter 13 can be improved. That is, in the high-frequency module 1a, the noise resistance of the first filter 12 and the second filter 13 is improved.

[0191] (Variation Example)

[0192] Next, modifications of Embodiments 1 to 5 will be described.

[0193] The first transmission filter 121, the second transmission filter 131, the first reception filter 122, the second reception filter 132, the first filter 12, and the second filter 13 in Embodiment 1 and Embodiments 3 to 5 are not limited to ladder-type filters, but may be longitudinally coupled vibrator-type elastic wave filters, for example.

[0194] In addition, the first transmission filter 121, the second transmission filter 131, the first reception filter 122, the second reception filter 132, the first filter 12, and the second filter 13 involved in Embodiment 1 and Embodiments 3 to 5 are each a surface acoustic wave filter. In addition, the first transmission filter 121, the second transmission filter 131, the first reception filter 122, and the second reception filter 132 involved in Embodiment 2 are each a bulk acoustic wave filter. These elastic wave filters are not limited thereto, and for example, the first transmission filter 121 may be a surface acoustic wave filter and the second transmission filter 131 may be a bulk acoustic wave filter. In addition, these elastic wave filters may be, for example, elastic wave filters using boundary acoustic waves, plate waves, and the like.

[0195] The first transmission filter 121 and the second transmission filter 131 involved in embodiments 1 to 4 are transmission filters that allow transmission signals to pass, but are not limited to this. For example, at least one of the first transmission filter 121 and the second transmission filter 131 may be a transmission-reception filter that allows transmission signals and reception signals to pass.

[0196] In the high frequency modules 1 according to the first, second, fourth and fifth embodiments, the second shield electrode 65 covers the second IDT electrode 641B or the second upper electrode 643B, but the present invention is not limited thereto. For example, the second shield electrode 65 may cover the first IDT electrode 641A or the first upper electrode 643A.

[0197] In the high-frequency module 1 involved in embodiments 1 to 4, the first communication frequency band is Band 1 of the 3GPP LTE standard, and the second communication frequency band is Band 3 of the 3GPP LTE standard. In addition, in the high-frequency module 1 involved in embodiment 5, the first communication frequency band is Band 39 of the 3GPP LTE standard, and the second communication frequency band is Band 41 of the 3GPP LTE standard. However, the combination of the first communication frequency band and the second communication frequency band is not limited to this. The combination of the first communication frequency band and the second communication frequency band is free as long as it can be used for simultaneous communication. In this case, when the maximum output power of the power level of the signal in the second communication frequency band is greater than the maximum output power of the power level of the signal in the first communication frequency band, as described above, by dissipating the heat generated by the second transmitting filter 131 or the second filter 13 from the first shielding electrode 69, the heat dissipation of the high-frequency module 1 is improved.

[0198] In addition, the maximum output power of the power level of the signal in the first communication frequency band may be greater than the maximum output power of the power level of the signal in the second communication frequency band. For example, the first communication frequency band is Band 41 of the 3GPP LTE standard, and the second communication frequency band is Band 39 of the 3GPP LTE standard. In this case, the heat dissipation of the high-frequency module 1 is improved by dissipating the heat generated by the first transmission filter 121 or the first filter 12 from the mounting substrate 4.

[0199] In the high frequency module 1 according to the first to fourth embodiments, the first reception filter 122 and the second reception filter 132 are included in the first electronic components 51, 51a, 51b, 51c, but the present invention is not limited thereto. For example, the first reception filter 122 and the second reception filter 132 may each be included in an electronic component including a single elastic wave filter.

[0200] The high-frequency module 1 involved in embodiments 1 to 5 has an antenna terminal 181, and the antenna 3 of the communication device 10 is connected to the antenna terminal 181 of the high-frequency module 1, but it is not limited to this. For example, it is also possible that the high-frequency module 1 has multiple antenna terminals, and the communication device 10 has antennas connected to the multiple antenna terminals respectively. In this case, the high-frequency module 1 has an antenna switch, which is used to select which transmission path, reception path or transmission and reception path each antenna terminal in the multiple antenna terminals is connected to. In addition, the antenna switch can be integrated with the first switch 11 involved in embodiments 1 to 4.

[0201] In this specification, "the element is arranged on the first main surface of the substrate" includes not only the case where the element is directly mounted on the first main surface of the substrate, but also the case where the element is arranged in the space on the first main surface side of the space on the second main surface side separated by the substrate. In other words, "the element is arranged on the first main surface of the substrate" includes the case where the element is mounted on the first main surface of the substrate via other circuit elements or electrodes. The element is, for example, the first electronic component 51, but is not limited to the first electronic component 51. The substrate is, for example, the mounting substrate 4. When the substrate is the mounting substrate 4, the first main surface is the main surface 41, and the second main surface is the main surface 42.

[0202] (Way)

[0203] The following means are disclosed in this specification.

[0204] A high-frequency module (1; 1a) according to a first embodiment includes a mounting substrate (4), a first elastic wave filter (121; 12), a second elastic wave filter (131; 13), a first resin layer (681), and a first shielding electrode (69). The mounting substrate (4) has a first main surface (41) and includes a first ground electrode (43). The first elastic wave filter (121; 12) is arranged on the first main surface (41) of the mounting substrate (4). The second elastic wave filter (131; 13) is arranged on the first elastic wave filter (121; 12). The first resin layer (681) covers at least a portion of the first elastic wave filter (121; 12) and at least a portion of the second elastic wave filter (131; 13). The first shielding electrode (69) covers at least a portion of the first resin layer (681). Both the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) are filters that at least support transmission. A first transmission signal passing through the first elastic wave filter (121; 12) and a second transmission signal passing through the second elastic wave filter (131; 13) can communicate simultaneously. A second main surface (133) of the second elastic wave filter (131; 13) on the side opposite to the first elastic wave filter (121; 12) contacts a first shielding electrode (69). The first elastic wave filter (121; 12) has a first functional electrode (641A; 643A). A first ground electrode (43) of the mounting substrate (4) is connected to the first functional electrode (641A; 643A) of the first elastic wave filter (121; 12).

[0205] According to the high-frequency module (1; 1a) involved in the above-mentioned aspect, there is a heat dissipation path for heat generated by the first functional electrode (641A; 643A) of the first elastic wave filter (121; 12) to be dissipated to the mounting substrate (4) side via the first ground electrode (43) of the mounting substrate (4). In addition, there is a heat dissipation path for heat generated by the second elastic wave filter (131; 13) to be dissipated to the first shielding electrode (69) side via the first shielding electrode (69). Therefore, the heat dissipation performance of the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) in the high-frequency module (1; 1a) can be improved.

[0206] The high-frequency module (1; 1a) involved in the second aspect further includes a conductor (661, 662) in the first aspect. The conductor (661, 662) connects the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13). The first elastic wave filter (121; 12) further includes a first support member (61A), a second ground electrode, and a via conductor (671). The first support member (61A) has two main surfaces (611A, 612A) facing each other. The second ground electrode is connected to the conductor (661, 662). The via conductor (671) passes through the first support member (61A) to connect the two main surfaces (611A, 612A) of the first support member (61A). The second elastic wave filter (131; 13) further includes a third ground electrode connected to the conductor (661, 662). The conductors (661, 662) and the via conductor (671) are connected to a first ground electrode (43) of the mounting substrate (4).

[0207] According to the high-frequency module (1; 1a) involved in the above-mentioned aspect, the heat conductivity of the heat dissipation path for dissipating the heat generated by the first functional electrode (641A; 643A) of the first elastic wave filter (121; 12) to the mounting substrate (4) side via the first ground electrode (43) of the mounting substrate (4) is improved. Therefore, the heat dissipation performance of the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) in the high-frequency module (1; 1a) can be improved.

[0208] In the high-frequency module (1; 1a) involved in the third aspect, in the first aspect or the second aspect, when viewed from the thickness direction (D1) of the mounting substrate (4), the first ground electrode (43) of the mounting substrate (4) overlaps with the first functional electrode (641A; 643A).

[0209] According to the high-frequency module (1; 1a) involved in the above-mentioned aspect, the thermal conductivity from the first functional electrode (641A; 643A) of the first elastic wave filter (121; 12) to the first ground electrode (43) of the mounting substrate (4) is improved. Therefore, the heat dissipation of the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) in the high-frequency module (1; 1a) can be improved.

[0210] A high frequency module (1; 1a) according to a fourth aspect is, in any one of the first to third aspects, further comprising a second resin layer (682). The second resin layer (682) is located between the first elastic wave filter (121; 12) and a first ground electrode (43) of the mounting substrate (4).

[0211] According to the high-frequency module (1; 1a) involved in the above-mentioned aspect, the heat conductivity of the heat dissipation path transmitted from the first functional electrode (641A; 643A) of the first elastic wave filter (121; 12) to the first ground electrode (43) of the mounting substrate (4) via the second resin layer (682) is improved. Therefore, the heat dissipation of the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) in the high-frequency module (1; 1a) can be improved.

[0212] The high-frequency module (1; 1a) involved in the fifth aspect is further provided with a second shielding electrode (65) in any aspect of the first aspect to the fourth aspect. The second shielding electrode (65) is connected to the first ground electrode (43) of the mounting substrate (4). The first elastic wave filter (121; 12) further has a first supporting member (61A). The first supporting member (61A) has two main surfaces (611A, 612A) facing each other. The second elastic wave filter (131; 13) further has a second supporting member (61B) and a second functional electrode (641B; 643B). The second supporting member (61B) has two main surfaces (611B, 612B) facing each other. The first functional electrode (641A; 643A) is provided on the main surface (611A) of the first supporting member (61A) on the second elastic wave filter (131; 13) side. The second functional electrode (641B; 643B) is provided on the main surface (611B) of the second supporting member (61B) on the first elastic wave filter (121; 12) side. The first functional electrode (641A; 643A) and the second functional electrode (641B; 643B) are located in the hollow space (SP0) and face each other in the thickness direction (D1) of the mounting substrate (4). The hollow space (SP0) is formed between the first supporting member (61A) and the second supporting member (61B) in the thickness direction (D1) of the mounting substrate (4). The second shielding electrode (65) is located in the hollow space (SP0) and covers at least one of the first functional electrode (641A; 643A) and the second functional electrode (641B; 643B).

[0213] According to the high-frequency module (1; 1a) involved in the above-mentioned aspect, the second shielding electrode (65) reduces heat dissipation from the first elastic wave filter (121; 12) to the second elastic wave filter (131; 13) and heat dissipation from the second elastic wave filter (131; 13) to the first elastic wave filter (121; 12). Therefore, the transfer of heat dissipation between the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) can be reduced, and the heat dissipation of the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) can be improved.

[0214] In the high-frequency module (1; 1a) according to the sixth aspect, in any one of the first aspect and the third aspect, the first elastic wave filter (121; 12) further includes a first supporting member (61A). The first supporting member (61A) includes two main surfaces (611A, 612A) facing each other. The second elastic wave filter (131; 13) further includes a second supporting member (61B) and a second functional electrode (641B; 643B). The second supporting member (61B) includes two main surfaces (611B, 612B) facing each other. The first functional electrode (641A; 643A) is provided on the main surface (611A) of the first supporting member (61A) on the side opposite to the second elastic wave filter (131; 13). The second functional electrode (641B; 643B) is provided on the main surface (611B) of the second supporting member (61B) on the first elastic wave filter (121; 12) side.

[0215] According to the high-frequency module (1; 1a) involved in the above-mentioned aspect, there is a heat dissipation path for heat generated by the first functional electrode (641A; 643A) of the first elastic wave filter (121; 12) to be dissipated toward the mounting substrate (4). In addition, there is a heat dissipation path for heat generated by the second elastic wave filter (131; 13) to be dissipated toward the first shielding electrode (69). Therefore, the heat dissipation performance of the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) in the high-frequency module (1; 1a) can be improved.

[0216] In a high frequency module (1; 1a) according to a seventh aspect, in any one of the first to sixth aspects, the first elastic wave filter (121; 12) is a filter for signals of a first power level. The second elastic wave filter (131; 13) is a filter for signals of a second power level. The maximum output power of the second power level is higher than the maximum output power of the first power level.

[0217] According to the high-frequency module (1; 1a) involved in the above-mentioned aspect, the heat dissipation of the second elastic wave filter (131; 13) is greater than the heat dissipation of the first elastic wave filter (121; 12). Therefore, the heat dissipation toward the first shielding electrode (69) side is greater than the heat dissipation toward the mounting substrate (4), thereby suppressing the temperature rise of the high-frequency module (1; 1a).

[0218] In the high-frequency module (1; 1a) involved in the eighth embodiment, in any one of the first to seventh embodiments, the first elastic wave filter (121; 12) is a filter that allows the transmission signal of Band 39 of the 3GPP LTE standard to pass, and the second elastic wave filter (131; 13) is a filter that allows the transmission signal of Band 41 of the 3GPP LTE standard to pass.

[0219] According to the high frequency module (1; 1a) involved in the above aspect, simultaneous communication using Band 39 and Band 41 of the 3GPP LTE standard can be performed.

[0220] A communication device (10) according to a ninth aspect comprises the high frequency module (1; 1a) and a signal processing circuit (2) according to any one of the first to eighth aspects. The signal processing circuit (2) is connected to the high frequency module (1; 1a).

[0221] According to the communication device (10) involved in the above-mentioned mode, there is a heat dissipation path for heat generated by the first functional electrode (641A; 643A) of the first elastic wave filter (121; 12) to be dissipated to the mounting substrate (4) side via the first ground electrode (43) of the mounting substrate (4). In addition, there is a heat dissipation path for heat generated by the second elastic wave filter (131; 13) to be dissipated to the first shielding electrode (69) side via the first shielding electrode (69). Therefore, the heat dissipation performance of the first elastic wave filter (121; 12) and the second elastic wave filter (131; 13) in the high-frequency module (1; 1a) can be improved.

[0222] Description of Reference Numerals

[0223] 1, 1a: high frequency module; 10: communication device; 11: first switch; 110: common terminal; 111: selection terminal; 112: selection terminal; 121: first transmission filter (first elastic wave filter); 122: first reception filter; 12: first filter (first elastic wave filter); 131: second transmission filter (second elastic wave filter); 132: second reception filter; 13: second filter (second elastic wave filter); 133: main surface (second main surface); 141: power amplifier; 142: power amplifier; 151: low noise amplifier; 152: low noise amplifier; 16: second switch; 160: common terminal; 161: selection terminal; 162: selection terminal 171: matching circuit; 172: matching circuit; 173: matching circuit; 174: matching circuit; 175: matching circuit; 176: matching circuit; 18: external connection terminal; 181: antenna terminal; 182: first input terminal; 183: second input terminal; 184: output terminal; 185: first output terminal; 186: second output terminal; 19: third switch; 190: common terminal; 191: selection terminal; 192: selection terminal; 23: fourth switch; 230: common terminal; 231: selection terminal; 232: selection terminal; 2: signal processing circuit; 21: RF signal processing circuit; 22: baseband signal processing circuit; 3: antenna; 4: mounting substrate; 4 1: principal surface (first principal surface); 42: principal surface; 43: ground electrode (first ground electrode); 51, 51a, 51b, 51c: first electronic component; 52: second electronic component; 53: third electronic component; 54: fourth electronic component; 55: fifth electronic component; 56: sixth electronic component; 61A: first substrate (first supporting member); 611A: principal surface; 612A: principal surface; 61B: second substrate (second supporting member); 611B: principal surface; 612B: principal surface; 62A: first low acoustic velocity film; 62B: second low acoustic velocity film; 63A: first piezoelectric layer; 63B: second piezoelectric layer; 641A: first IDT electrode (first functional electrode); 641B: second IDT electrode Pole (second functional electrode); 642A: first circuit portion; 642B: second circuit portion; 643A: first upper electrode; 643B: second upper electrode; 644A: first piezoelectric film; 644B: second piezoelectric film; 645A: first lower electrode; 645B: second lower electrode; 646A: cavity; 646B: cavity; 65: second shielding electrode; 661: conductor; 662: frame (conductor); 671: via conductor; 672: bump; 673: conductor; 674: bump; 681: first resin layer; 682: second resin layer; 69: first shielding electrode; D1: first direction; SP0: hollow space; SP1: first space; SP2: second space.

Claims

1. A high frequency module, comprising: A mounting substrate having a first main surface and including a first ground electrode; a first elastic wave filter disposed on the first main surface of the mounting substrate; a second elastic wave filter, disposed on the first elastic wave filter; a first resin layer covering at least a portion of the first elastic wave filter and at least a portion of the second elastic wave filter; and a first shielding electrode covering at least a portion of the first resin layer, in, The first elastic wave filter and the second elastic wave filter are filters that at least support transmission, A first transmission signal passing through the first elastic wave filter and a second transmission signal passing through the second elastic wave filter can be communicated simultaneously. A second main surface of the second elastic wave filter on the side opposite to the first elastic wave filter is in contact with the first shielding electrode. The first elastic wave filter has a first functional electrode, The first ground electrode of the mounting substrate is connected to the first functional electrode of the first elastic wave filter.

2. The high frequency module according to claim 1, in, further comprising a conductor connecting the first elastic wave filter and the second elastic wave filter, The first elastic wave filter further comprises: a first supporting member having two main surfaces facing each other; a second ground electrode connected to the electrical conductor; and a via conductor that penetrates the first supporting member and connects the two main surfaces of the first supporting member, The second elastic wave filter further includes a third ground electrode connected to the conductor. The electric conductor and the via conductor are connected to the first ground electrode of the mounting substrate.

3. The high frequency module according to claim 1, in, The first ground electrode of the mounting substrate overlaps with the first functional electrode when viewed in plan from the thickness direction of the mounting substrate.

4. The high frequency module according to any one of claims 1 to 3, in, A second resin layer is further provided, and the second resin layer is located between the first elastic wave filter and the first ground electrode of the mounting substrate.

5. The high frequency module according to any one of claims 1 to 4, in, further comprising a second shielding electrode, the second shielding electrode being connected to the first ground electrode of the mounting substrate, The first elastic wave filter further includes a first supporting member having two main surfaces facing each other. The second elastic wave filter further comprises: a second supporting member having two main surfaces facing each other; and The second functional electrode, The first functional electrode is provided on a main surface of the first supporting member on the second elastic wave filter side. The second functional electrode is provided on a main surface of the second supporting member on the first elastic wave filter side. The first functional electrode and the second functional electrode are located in a hollow space and face each other in a thickness direction of the mounting substrate, wherein the hollow space is formed between the first supporting member and the second supporting member in the thickness direction of the mounting substrate, The second shielding electrode is located in the hollow space and covers at least one of the first functional electrode and the second functional electrode.

6. The high frequency module according to claim 1 or 3, in, The first elastic wave filter further includes a first supporting member having two main surfaces facing each other. The second elastic wave filter further comprises: a second supporting member having two main surfaces facing each other; and The second functional electrode, The first functional electrode is provided on a main surface of the first supporting member on a side opposite to the second elastic wave filter. The second functional electrode is provided on a main surface of the second supporting member on the first elastic wave filter side.

7. The high frequency module according to any one of claims 1 to 6, in, The first elastic wave filter is a filter for signals of a first power level, The second elastic wave filter is a filter for signals of a second power level having a maximum output power higher than the maximum output power of the first power level.

8. The high frequency module according to any one of claims 1 to 7, in, The first elastic wave filter is a filter that allows transmission signals of Band 39 of the 3GPP LTE standard to pass, and the second elastic wave filter is a filter that allows transmission signals of Band 41 of the 3GPP LTE standard to pass.

9. A communication device comprising: The high frequency module according to any one of claims 1 to 8; and The signal processing circuit is connected to the high frequency module.

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