Silicon-based OLED (Organic Light Emitting Diode) film layer processing device and processing method

Abstract

The invention provides a silicon-based OLED (Organic Light Emitting Diode) film processing device and method, the silicon-based OLED film processing device comprises a water bath mechanism, a liquid suction pipe and a rotary tray, the liquid suction pipe is in driving connection by an electric displacement mechanism, the water bath mechanism is used for caching and preserving heat of liquid, the electric displacement mechanism drives the liquid suction pipe to lift and translate, and the liquid suction pipe is used for transferring the liquid from the water bath mechanism to the rotary tray and spraying the liquid. The rotary tray is used for bearing a wafer and rotating; a buffer chamber of the water bath mechanism is embedded and matched with a cover disc of the liquid suction pipe, so that a sealed suction space is formed between the buffer chamber and the cover disc; and the cover disc is matched with the rotating tray in a covering manner, so that the cover disc forms comprehensive spraying coverage on the rotating tray. The constant-temperature water bath treatment is performed in advance, so that the liquid fluidity and the solvent performance are optimized; the liquid suction pipe matched with the wafer in size is designed, and a liquid spraying mode is adopted, so that liquid is pre-laid on the whole surface of the wafer at the same time, the difference of local liquid is reduced, and the uniformity of liquid distribution is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of OLED display, and in particular to a silicon-based OLED film processing device and a processing method. Background Art

[0002] In the process of coating, photolithography, development, evaporation and stripping, which is one of the manufacturing steps of silicon-based OLED semiconductors, the glue is spin-coated on the surface of the wafer, and the film layer is exposed with a preset mask pattern. The developer is then sprayed on the film layer on the surface of the wafer for development, and the evaporated film layer is then stripped off to produce the required pattern.

[0003] In the process of silicon-based OLED semiconductor coating technology, the wafer needs to be adsorbed on the rotating suction cup first, and then moved to the center of the wafer through the spray device and the spray hose valve to spray a certain amount of glue. The rotating suction cup is spin-coated at 0 to 6000 rpm to complete the production of a certain film thickness.

[0004] However, due to the difference in steps on the wafer surface, the method of applying liquid in the center, and the uneven stress distribution of the glue, it is difficult to evenly distribute the glue to all parts of the wafer. The developer with higher fluidity also has such problems, especially since the difference between the center and edge areas of the wafer is the largest, which leads to incomplete patterns, residual components, and film mura.

[0005] For example, a Chinese patent document once disclosed a method for coating glue on a thinned wafer [Chinese Patent No.: 202010529868.6]. The present invention provides a method for coating glue on a thinned wafer, comprising the following steps: S1, setting a preset vacuum degree, adsorbing the wafer to be coated with glue on a wafer stage under the preset vacuum degree, and controlling the wafer stage to rotate at a first speed, and applying glue to the center of the wafer through a glue nozzle; S2, after the gluing is completed, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S3, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S4, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S5, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S6, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S7, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S8, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S9, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S10, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S11, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S12, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S13, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S14, the wafer stage rotates at a second speed for glue reflux, and the second speed is less than the first speed; S15, the The wafer stage first rotates at a third speed, and then at a fourth speed, the third speed is less than the fourth speed, and the wafer is subjected to variable speed spinning; S4, the wafer stage is controlled to spin at a fifth speed to complete photoresist spinning; S5, the wafer stage is controlled to rotate at a sixth speed to form a photoresist film on the wafer surface, the fifth speed is less than the sixth speed; S6, the wafer stage is rotated at a seventh speed, and the cleaning nozzle is used to scan the wafer from the first position to the second position for edge trimming, which can improve the uniformity of the photoresist on the wafer surface and avoid photoresist accumulation and liquid splashing.

[0006] The above technical solution is to drip glue at the center of the wafer and then spin the photoresist at different speeds. Spinning the glue by rotation alone will cause problems such as poor glue film effect due to the difference in steps on the wafer surface and uneven stress distribution of the glue. Summary of the invention

[0007] The purpose of the present invention is to solve the above problems in the prior art and to propose a silicon-based OLED film processing device and method.

[0008] The objectives of the present invention can be achieved through the following technical solutions: a silicon-based OLED film layer processing device, comprising a water bath mechanism, a pipette and a rotating tray, the pipette being driven and connected by an electric shift mechanism, the water bath mechanism being used to cache and keep liquid warm, the electric shift mechanism driving the pipette to rise and fall and translate, the pipette being used to transfer liquid from the water bath mechanism to the rotating tray and spray it, the rotating tray being used to carry wafers and rotate; the cache chamber of the water bath mechanism and the cover plate of the pipette are fitted in an embedded manner, so that a sealed suction space is formed between the cache chamber and the cover plate; the cover plate and the rotating tray are fitted in a cover manner, so that the cover plate forms a comprehensive spray coverage on the rotating tray.

[0009] In the above-mentioned silicon-based OLED film processing device, the water bath mechanism includes an outer shell and an inner shell which are embedded in each other, the inner cavity of the inner shell is a cache chamber, the top opening of the inner shell is covered with a lid, and a heat preservation chamber is formed between the outer shell and the inner shell. An injection pipe is connected to the edge of the inner shell, and the injection pipe is connected to a glue injection pump through a hose, and a solenoid valve is installed on the hose.

[0010] In the above-mentioned silicon-based OLED film layer processing device, the pipette includes a cylindrical shell, a pumping rod is inserted into the cylindrical shell, the bottom end of the pumping rod is fixedly connected to a piston, the peripheral wall of the piston is in sealing contact with the inner wall of the cylindrical shell, the top end of the pumping rod is fixedly connected to an electric push-pull device, and the bottom opening of the cylindrical shell is expanded outward to form the cover plate, which is a cylindrical shell or a conical shell, and the cover plate is connected to the cylindrical shell through a small-diameter opening at the top, and the cover plate is connected to the outside through a large-diameter opening at the bottom.

[0011] In the above-mentioned silicon-based OLED film processing device, the cylindrical shell is a transparent shell, and a scale is set on the outer wall of the cylindrical shell; the large-diameter opening at the bottom of the cover plate has a diameter larger than that of the rotating tray.

[0012] In the above-mentioned silicon-based OLED film layer processing device, the inner shell is an inverted conical shell, the small diameter end of the inner shell is the bottom wall, the large diameter end of the inner shell is the top opening, the top opening diameter of the inner shell is larger than the bottom opening diameter of the cover plate, the bottom opening diameter of the inner shell is equal to the bottom opening diameter of the cover plate, and the height range of the inner shell is 3 to 30 cm; the diameter of the outer shell is 1 to 10 cm larger than the top opening diameter of the inner shell, and the height of the outer shell is consistent with that of the inner shell.

[0013] In the above-mentioned silicon-based OLED film layer processing device, the outer shell and the inner shell are both made of brown glass shells, and the inclination angle range of the inner shell is 40° to 50°; a heating resistance wire and a temperature sensor are arranged in the heat preservation chamber, the temperature sensor is connected to the temperature controller through a circuit, and the temperature controller is connected to the heating resistance wire through a circuit.

[0014] In the above-mentioned silicon-based OLED film layer processing device, the rotating tray includes a disc body, a rotating shaft is protruding from the bottom of the disc body, and the rotating shaft is driven and connected by the rotating motor; the disc body has a vacuum inner cavity, and a plurality of adsorption holes are opened on the top surface of the disc body, and the plurality of adsorption holes are connected to the vacuum inner cavity.

[0015] In the above-mentioned silicon-based OLED film processing device, the electric shift mechanism includes a translation electric cylinder, the translation electric cylinder translates and drives a lifting electric cylinder, and the lifting electric cylinder lifts and drives the pipette.

[0016] A processing method for a silicon-based OLED film layer processing device, the processing method is applied to the above-mentioned silicon-based OLED film layer processing device, and the processing method comprises the following steps:

[0017] S1. Place the wafer to be processed on a rotating tray and fix it by vacuum adsorption to ensure that the wafer is clean and dust-free;

[0018] S2. Within 0.1 to 1.0 hours before starting the treatment, inject a preset amount of liquid into the cache chamber through a glue injection pump, and use a water bath mechanism to heat the liquid to a temperature range of 20 to 70° C.;

[0019] S3, liquid suction and spraying: start the liquid suction pipe through the electric push-pull device to extract a preset amount of liquid, and then the electric displacement mechanism electrically controls the liquid suction pipe to move upward to a preset height, then moves horizontally a preset distance, and finally moves downward to a preset distance between the wafer surface to achieve positioning of the wafer surface; control the piston to move downward at a predetermined speed through the electric push-pull device to achieve uniform spraying of liquid onto the upper surface of the wafer;

[0020] S4, low-speed spin coating: After the liquid spraying operation is completed, the liquid pipette is driven upward to separate from the wafer by the electric shift mechanism, and the rotating tray is driven to perform low-speed spin coating operation in a fixed direction, at a preset speed and for a preset time, wherein the preset speed is within 1000 rpm;

[0021] S5, high-speed spin coating: After the low-speed spin coating operation is completed, the liquid pipette is driven back to the initial position by the electric shift mechanism, and the rotating tray is driven to perform high-speed spin coating operation in a fixed direction, a preset speed and a preset time, wherein the preset speed is 1000-6000rpm;

[0022] S6. Quality inspection: After the high-speed spin coating operation is completed, the rotating tray stops rotating and the processed wafers are inspected by instruments to ensure that there are no defects. The equipment parameters are adjusted according to the inspection results to achieve the preset goals for silicon-based OLED film processing.

[0023] In the processing method of the above-mentioned silicon-based OLED film layer processing device, in step S3, the cover plate is extended into the buffer chamber, the electric push-pull device pulls the piston to move upward to absorb a certain amount of liquid, the electric shift mechanism moves the pipette vertically upward to be 1 to 2 cm higher than the top of the buffer chamber, and then moves horizontally to above the rotating tray, and moves the pipette downward so that the cover plate is covered on the wafer and overlaps; the electric push-pull device pushes the piston downward at a speed of 0.4 cm / min to spray liquid onto the entire upper surface of the wafer.

[0024] Compared with the prior art, the silicon-based OLED film processing device and method have the following beneficial effects:

[0025] 1. Uniform liquid coverage: Pre-treatment in a constant temperature water bath optimizes the liquid fluidity and solvent properties so that the liquid can cover the wafer surface more evenly.

[0026] 2. Material protection and improved heat conduction: The buffer chamber is made of glass brown material, which can not only protect specific liquids from photosensitivity, but also improve the thermal conductivity of the water bath, comprehensively improving the stability and efficiency of the processing process.

[0027] 3. Improved coating uniformity: Designing a pipette with a size that matches the wafer and using a liquid spraying method ensures that the entire surface of the wafer is pre-coated with liquid at the same time, reducing local liquid differences and improving the uniformity of liquid distribution.

[0028] 4. Combination of multi-speed spin coating: The wafer tray adopts two-speed spin coating, and the combination of low speed and high speed greatly reduces the defects of local glue being too thick or too thin, or even missing, which is easy to be caused by the center liquid. It can better evenly coat the liquid on the wafer surface, improve the coating effect and consistency, and save time compared with traditional spin coating.

[0029] 5. Applicability extension: The present invention can also be applied to developer loading and stripping loading methods, thereby improving the uniformity of the entire wafer surface and ensuring the consistency of the film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a structural schematic diagram of the silicon-based OLED film layer processing device.

[0031] Figure 2 It is a schematic diagram of the action of the silicon-based OLED film processing method.

[0032] In the figure, 1, water bath mechanism; 1a, outer shell; 1b, inner shell; 1c, injection tube; 2, pipette; 2a, cover plate; 3, rotating tray; 4, wafer. DETAILED DESCRIPTION

[0033] The following are specific embodiments of the present invention and the accompanying drawings to further describe the technical solution of the present invention, but the present invention is not limited to these embodiments.

[0034] Embodiment 1

[0035] The invention discloses a silicon-based OLED film processing device, comprising a water bath mechanism 1, a pipette 2 and a rotating tray 3, wherein the pipette 2 is connected by a drive of an electric shift mechanism, the water bath mechanism 1 is used for caching and keeping liquid warm, the electric shift mechanism drives the pipette 2 to rise and fall and translate, the pipette 2 is used for transferring liquid from the water bath mechanism 1 to the rotating tray 3 and spraying it, and the rotating tray 3 is used for carrying a wafer 4 and rotating it; the cache chamber of the water bath mechanism 1 is fitted with a cover plate 2a of the pipette 2, so that a sealed suction space is formed between the cache chamber and the cover plate 2a; the cover plate 2a is fitted with the rotating tray 3 in a cover-like manner, so that the cover plate 2a forms a comprehensive spray coverage on the rotating tray 3.

[0036] The water bath mechanism 1 includes an outer shell 1a and an inner shell 1b which are embedded in each other. The inner cavity of the inner shell 1b is a buffer chamber. The top of the inner shell 1b is covered with a lid. A heat preservation chamber is formed between the outer shell 1a and the inner shell 1b. An injection pipe 1c is connected to the edge of the inner shell 1b. The injection pipe 1c is connected to the injection pump through a hose. The hose is equipped with a solenoid valve. The amount of liquid injected into the buffer chamber is accurately controlled by controlling the solenoid valve, and the amount of liquid working on the wafer 4 is accurately controlled.

[0037] The pipette 2 includes a cylinder shell, a pumping rod is inserted into the cylinder shell, the bottom end of the pumping rod is fixedly connected to a piston, the peripheral wall of the piston is in sealing contact with the inner wall of the cylinder shell, the top end of the pumping rod is fixedly connected to an electric push-pull device, the bottom opening of the cylinder shell is expanded outward to form a cover plate 2a, the cover plate 2a is a cylindrical shell or a conical shell, the cover plate 2a is connected to the cylinder shell through a small-diameter opening at the top, and the cover plate 2a is connected to the outside through a large-diameter opening at the bottom.

[0038] The diameter of the pump rod is 10-15 cm. The electric push-pull device controls the movement of the piston to extract a specific amount of liquid. The amount of liquid to be obtained is calculated according to the liquid amount = π × radius 2 × V (piston movement speed). The electric push-pull device controls the piston to move downward at a speed of 0.4 cm / min to spray out the liquid.

[0039] The shell is a transparent shell, and a scale is set on the outer wall of the shell; the large diameter of the bottom of the cover plate 2a is larger than the rotating tray 3. The scale can accurately control the amount of liquid to be sucked. The rotating tray 3 is placed on the wafer 4 with a diameter larger than the diameter of the plate body. The cover plate 2a is slightly larger than the diameter of the wafer 4 by 0.5 to 1.5 cm, and the rotating tray 3 is smaller than the diameter of the wafer 4, so that the pipette 2 can press down to cover the edge of the wafer 4 when moving to spray liquid. To ensure that the entire surface of the wafer 4 can be matched when applying liquid, and further cover the entire surface evenly at the same time to achieve uniform liquid spraying.

[0040] The inner shell 1b is an inverted conical shell, the small diameter end of the inner shell 1b is the bottom wall, the large diameter end of the inner shell 1b is the top opening, the top opening diameter of the inner shell 1b is larger than the bottom opening diameter of the cover plate 2a, the bottom opening diameter of the inner shell 1b is equal to the bottom opening diameter of the cover plate 2a, and the height range of the inner shell 1b is 3 to 30 cm; the diameter of the outer shell 1a is 1 to 10 cm larger than the top opening diameter of the inner shell 1b, and the height of the outer shell 1a is consistent with that of the inner shell 1b. Thus, the cover plate 2a can extend into the cache chamber of the inner shell 1b, and a good embedding depth is provided through the angle formed by the inclined peripheral wall, so as to facilitate the suction of liquid.

[0041] The outer shell 1a and the inner shell 1b are both made of brown glass shells, and the tilt angle range of the inner shell 1b is 40° to 50°; a heating resistor and a temperature sensor are arranged in the heat preservation chamber, the temperature sensor is connected to the temperature controller through a circuit, and the temperature controller is connected to the heating resistor through a circuit.

[0042] The temperature sensor is used to sense the water temperature and transmit the water temperature signal to the thermostat. The thermostat controls the temperature rise and fall of the resistance wire according to the temperature signal to keep the water temperature at the set constant temperature value. The optimal range of the tilt angle of the inner shell 1b is 45°, which is convenient for the guide port of the cover plate 2a to press down to absorb liquid, and when not in operation, it can be pressed down to provide a cover body for sealing protection.

[0043] The rotating tray 3 includes a disc body, a rotating shaft is convexly arranged at the bottom of the disc body, and the rotating shaft is connected by a rotating motor; the disc body has a vacuum inner cavity, and a plurality of adsorption holes are opened on the top surface of the disc body, and the plurality of adsorption holes are connected to the vacuum inner cavity. The interior of the rotating tray 3 adopts a hollow structure, and an air hole is designed at the bottom of the rotating tray 3 to connect the air pipe so that vacuum adsorption can be achieved while rotating.

[0044] The electric shift mechanism includes a translation electric cylinder, which translates and drives a lifting electric cylinder, and the lifting electric cylinder elevates and drives the pipette 2. The translation electric cylinder drives the pipette 2 to move back and forth horizontally between the water bath mechanism 1 and the rotating tray 3, and the lifting electric cylinder drives the pipette 2 to move up and down above the water bath mechanism 1 or the rotating tray 3 to perform liquid collection or liquid spraying operations.

[0045] Embodiment 2

[0046] Based on the first embodiment, the difference of this embodiment is that:

[0047] A processing method for a silicon-based OLED film layer processing device, the processing method is applied to the above-mentioned silicon-based OLED film layer processing device, and the processing method comprises the following steps:

[0048] S1, placing the wafer 4 to be processed on the rotating tray 3, and fixing it by vacuum adsorption to ensure that the wafer 4 is clean and dust-free;

[0049] S2, within 0.1 to 1.0 hours before starting the treatment, inject a preset amount of liquid into the cache chamber through a glue injection pump, and use a water bath mechanism 1 to heat the liquid to a temperature range of 20 to 70° C.;

[0050] S3, liquid suction and spraying: start the liquid suction pipe 2 through the electric push-pull device to extract a preset amount of liquid, and then the electric shift mechanism electrically controls the liquid suction pipe 2 to move upward to a preset height, then moves horizontally a preset distance, and finally moves downward to a predetermined distance between the surface of the wafer 4 to achieve positioning of the surface of the wafer 4; control the piston to move downward at a predetermined speed through the electric push-pull device to achieve uniform spraying of liquid onto the upper surface of the wafer 4;

[0051] In step S3, the cover plate 2a is extended into the buffer chamber, and the electric push-pull device pulls the piston upward to absorb a certain amount of liquid. The electric shift mechanism moves the pipette 2 vertically upward to be 1 to 2 cm higher than the top of the buffer chamber, and then moves horizontally to above the rotating tray 3, and moves the pipette 2 downward so that the cover plate 2a is covered on the wafer 4 and overlaps with it; the piston is pushed downward by the electric push-pull device at a speed of 0.4 cm / min, and liquid is sprayed onto the entire upper surface of the wafer 4.

[0052] S4, low-speed spin coating: After the liquid spraying operation is completed, the liquid pipette 2 is driven by the electric shift mechanism to move upward and away from the wafer 4, and the rotating tray 3 is driven to perform a low-speed spin coating operation in a fixed direction, a preset speed and a preset time, wherein the preset speed is within 1000 rpm;

[0053] S5, high-speed spin coating: After the low-speed spin coating operation is completed, the electric shift mechanism drives the pipette 2 back to the initial position, and drives the rotating tray 3 to perform high-speed spin coating in a fixed direction, at a preset speed and for a preset time, wherein the preset speed is 1000-6000 rpm;

[0054] S6. Quality inspection: After the high-speed spin coating operation is completed, the rotating tray 3 stops rotating, and the processed wafer 4 is subjected to instrument inspection to ensure that there are no defects. The equipment parameters are adjusted according to the inspection results to achieve the preset goals for the silicon-based OLED film layer processing.

[0055] After coating, the film thickness is tested with an ellipsometer to adjust the rotation speed. Different adhesive viscosity and the same rotation speed will result in different film thickness. For example, a glue rotation speed of 800Rpm has a film thickness of 1.4μm. The speed can be increased and the film thickness can be reduced simultaneously, as long as DOE verification is performed. The film surface can be magnified for inspection. If the defects reach the set warning line, it will be re-cleaned and re-coated. For example, if the design has 5% defect, it needs to be re-coated.

[0056] The specific embodiments described herein are merely examples of the spirit of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in similar ways, but they will not deviate from the spirit of the present invention or exceed the scope defined by the appended claims.

[0057] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

Claims

1. A silicon-based OLED film processing device, comprising a water bath mechanism, a pipette and a rotating tray, wherein the pipette is driven and connected by an electric shift mechanism, characterized in that: The water bath mechanism is used for caching and keeping the liquid warm, the electric shift mechanism drives the pipette to rise, fall and translate, the pipette is used for transferring the liquid from the water bath mechanism to the rotating tray and spraying it, and the rotating tray is used for carrying wafers and rotating; the cache chamber of the water bath mechanism and the cover plate of the pipette are fitted in an embedded manner, so that a sealed suction space is formed between the cache chamber and the cover plate; the cover plate and the rotating tray are fitted in a cover manner, so that the cover plate forms a comprehensive spray coverage on the rotating tray.

2. The silicon-based OLED film processing device according to claim 1, characterized in that: The water bath mechanism includes an outer shell and an inner shell which are embedded in each other. The inner cavity of the inner shell is a cache chamber. The top of the inner shell is covered with a lid. A heat preservation chamber is formed between the outer shell and the inner shell. An injection pipe is connected to the edge of the inner shell. The injection pipe is connected to a glue injection pump through a hose. A solenoid valve is installed on the hose.

3. The silicon-based OLED film processing device according to claim 2, characterized in that: The pipette includes a cylinder shell, a pumping rod is inserted into the cylinder shell, the bottom end of the pumping rod is fixedly connected to a piston, the peripheral wall of the piston is in sealing contact with the inner wall of the cylinder shell, the top end of the pumping rod is fixedly connected to an electric push-pull device, the bottom opening of the cylinder shell is expanded outward to form the cover plate, the cover plate is a cylindrical shell or a conical shell, the cover plate is connected to the cylinder shell through a small-diameter opening at the top, and the cover plate is connected to the outside through a large-diameter opening at the bottom.

4. The silicon-based OLED film processing device according to claim 3, characterized in that: The cylinder shell is a transparent shell, and a scale is arranged on the outer wall of the cylinder shell; the large diameter opening at the bottom of the cover plate has a diameter larger than that of the rotating tray.

5. The silicon-based OLED film processing device according to claim 3, characterized in that: The inner shell is an inverted conical shell, the small diameter end of the inner shell is the bottom wall, the large diameter end of the inner shell is the top opening, the top opening diameter of the inner shell is larger than the bottom opening diameter of the cover plate, the bottom opening diameter of the inner shell is equal to the bottom opening diameter of the cover plate, and the height range of the inner shell is 3 to 30 cm; the outer shell diameter is 1 to 10 cm larger than the top opening diameter of the inner shell, and the height of the outer shell is consistent with that of the inner shell.

6. The silicon-based OLED film processing device according to claim 5, characterized in that: The outer shell and the inner shell are both made of brown glass shells, and the inclination angle range of the inner shell is 40° to 50°; a heating resistance wire and a temperature sensor are arranged in the heat preservation chamber, the temperature sensor is connected to a temperature controller through a circuit, and the temperature controller is connected to the heating resistance wire through a circuit.

7. The silicon-based OLED film processing device according to claim 3, characterized in that: The rotating tray comprises a disc body, a rotating shaft is protruding from the bottom of the disc body, and the rotating shaft is driven and connected by the rotating motor; the disc body has a vacuum inner cavity, and a plurality of adsorption holes are opened on the top surface of the disc body, and the plurality of adsorption holes are connected to the vacuum inner cavity.

8. The silicon-based OLED film processing device according to claim 3, characterized in that: The electric shift mechanism comprises a translation electric cylinder, the translation electric cylinder translates and drives a lifting electric cylinder, and the lifting electric cylinder lifts and drives the pipette.

9. A method for processing a silicon-based OLED film layer processing device, characterized in that: The processing method is applied to the silicon-based OLED film processing device according to any one of claims 3 to 8, and the processing method comprises the following steps: S1. Place the wafer to be processed on a rotating tray and fix it by vacuum adsorption to ensure that the wafer is clean and dust-free; S2. Within 0.1 to 1.0 hours before starting the treatment, inject a preset amount of liquid into the cache chamber through a glue injection pump, and use a water bath mechanism to heat the liquid to a temperature range of 20 to 70° C.; S3, liquid suction and spraying: start the liquid suction pipe through the electric push-pull device to extract a preset amount of liquid, and then the electric displacement mechanism electrically controls the liquid suction pipe to move upward to a preset height, then moves horizontally a preset distance, and finally moves downward to a preset distance between the wafer surface to achieve positioning of the wafer surface; control the piston to move downward at a predetermined speed through the electric push-pull device to achieve uniform spraying of liquid onto the upper surface of the wafer; S4, low-speed spin coating: After the liquid spraying operation is completed, the liquid pipette is driven upward to separate from the wafer by the electric shift mechanism, and the rotating tray is driven to perform low-speed spin coating operation in a fixed direction, at a preset speed and for a preset time, wherein the preset speed is within 1000 rpm; S5, high-speed spin coating: After the low-speed spin coating operation is completed, the liquid pipette is driven back to the initial position by the electric shift mechanism, and the rotating tray is driven to perform high-speed spin coating operation in a fixed direction, a preset speed and a preset time, wherein the preset speed is 1000-6000rpm; S6. Quality inspection: After the high-speed spin coating operation is completed, the rotating tray stops rotating and the processed wafers are inspected by instruments to ensure that there are no defects. The equipment parameters are adjusted according to the inspection results to achieve the preset goals for silicon-based OLED film processing.

10. The silicon-based OLED film processing device according to claim 9, characterized in that: In step S3, the cover plate is extended into the buffer chamber, and the electric push-pull device pulls the piston upward to absorb a certain amount of liquid. The electric shift mechanism moves the pipette vertically upward to be 1 to 2 cm higher than the top of the buffer chamber, and then moves horizontally to above the rotating tray. The pipette is moved downward so that the cover plate is placed on the wafer and overlaps with it; the piston is pushed downward by the electric push-pull device at a speed of 0.4 cm / min to spray liquid onto the entire upper surface of the wafer.

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