Method for preparing single-sided and double-sided carrier tape by using double-sided copper-clad PI material

Abstract

The invention relates to the technical field of IC (integrated circuit) card carrier tapes, in particular to a method for preparing a single-sided and double-sided carrier tape by using a double-sided copper-clad PI (polyimide) material. The method comprises the steps of base material selection, stamping, pretreatment, dry film pressing, exposure, development, etching, laser punching, cleaning, electroplating and slitting, the carrier tape base material made of the double-sided copper-clad PI material is finally prepared into the single-sided and double-sided carrier tape with the jacking column force larger than 80 N, and therefore the double-sided normal carrier tape production process is simplified, and the production efficiency is improved. According to the carrier tape base material, the recyclable double-face copper-clad PI material is used for replacing unrecyclable epoxy resin glass fabric, and environmental protection is facilitated; a carrier tape product is made of a double-sided copper-clad PI material, copper is etched off by a pressure welding surface, and the PI surface is rough, so that the problem that the jacking column force of a single PI material does not meet the standard can be solved; the technological process of a double-sided product can be simplified, the production efficiency is improved, and energy is saved.

Description

Technical Field

[0001] The invention relates to the technical field of IC card carrier tapes, and in particular to a method for preparing single-sided and double-sided carrier tapes by using double-sided copper-clad PI materials. Background Art

[0002] The existing IC card carrier production often uses epoxy resin glass fiber cloth, which is a thermosetting material and cannot be recycled and reused. Long-term use will burden the environment. In contrast, PI material, as a thermoplastic material, can be recycled and is more environmentally friendly. However, due to the self-lubricating property of a single piece of PI material, the top column force of the carrier product is insufficient. The standard requires >80N, while the top column force of untreated PI material is only about 20N, which cannot meet the requirements. To solve these problems, existing technologies such as Chinese patent CN 110752160 A propose a direct packaging process to simplify the process through double-sided exposure. However, this solution still uses non-recyclable epoxy resin glass fiber cloth, resulting in waste of resources and environmental problems. At the same time, when preparing single-sided and double-sided carriers using traditional processes, there are problems such as complex processes, low efficiency, and substandard top column force, which urgently need to be further improved. Summary of the invention

[0003] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a method for preparing a single-sided and double-sided carrier tape by using a double-sided copper-clad PI material.

[0004] The technical solution adopted by the present invention is as follows: A method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material comprises the following steps: S1. Substrate selection: double-sided copper-clad PI material is selected as the carrier substrate; S2. Stamping: Stamping the carrier tape substrate to form edge serrations on the double-sided copper-clad PI material; S3, pre-treatment: cleaning the carrier substrate, first washing with water to remove surface contamination, and then micro-etching with dilute sulfuric acid to remove the surface oxide layer; S4, pressing dry film: pressing dry film on the carrier substrate, and applying the dry film to the contact surface and pressure welding surface of the carrier substrate by using a laminator; S5, exposure: expose the dry film, through vacuum suction and ultraviolet irradiation, the pattern on the film is irradiated on the dry film; S6, development: dissolve the dry film that has not been irradiated with ultraviolet light with a sodium carbonate solution, and retain the developed dry film; S7, etching: etching the developed carrier substrate, using an acidic cupric chloride solution to dissolve and corrode the copper exposed after development; S8, laser punching: laser punching is performed on the etched carrier substrate, and the PI material in the center of the copper ring is removed by laser equipment to expose the copper layer of the carrier substrate; S9, cleaning: cleaning the carrier substrate to remove the copper oxide layer, the cleaning speed is 5~7m / min; S10, electroplating: performing gold plating on the contact surface of the carrier substrate and performing soft gold electroplating on the bonding surface; S11, slitting: slitting the carrier tape substrate with a slitting device to obtain single-sided and double-sided carrier tapes with a width of 35 cm.

[0005] This technical solution uses the steps of substrate selection, stamping, pretreatment, film pressing, exposure, development, etching, laser punching, cleaning, electroplating and slitting to make a carrier substrate of double-sided copper-clad PI material, and finally obtain single-sided and double-sided carriers with a top column force greater than 80N, thereby simplifying the production process of preparing double-sided carriers using copper-clad laminates and improving production efficiency. Specifically, double-sided copper-clad PI material is superior to thermosetting material made of epoxy resin glass fiber cloth; double-sided copper-clad PI material is selected as the carrier substrate, and PI material is a thermoplastic material that can be recycled and reused, which is conducive to the sustainable development of resources. Punching is performed on the double-sided copper-clad PI material to obtain edge perforations for subsequent processing and positioning; surface contamination is removed by water washing, and then the oxide layer is removed by micro-etching with dilute sulfuric acid to ensure the quality of subsequent processes; a dry film is applied to the contact surface and the bonding surface of the carrier substrate using a laminator to prepare for subsequent patterning; the film pattern is transferred to the dry film by ultraviolet irradiation under a vacuum environment; a sodium carbonate solution is used to dissolve the unexposed part of the dry film to retain the required pattern; an acidic cupric chloride solution is used to dissolve the copper layer exposed after development to form a circuit pattern; a laser device is used to remove the PI material at the center of the copper ring to expose the copper layer for subsequent connection; the carrier substrate is cleaned to remove the copper oxide layer to ensure surface cleanliness; the contact surface is gold-plated, and the bonding surface is soft-gold electroplated to enhance the corrosion resistance of the front pattern and enhance the solderability of the bonding surface; a slitting device is used to cut the carrier substrate into single-sided and double-sided carriers with a width of 35 cm. The IC card carrier prepared by this method can ensure that the top column force is greater than 80N, preferably up to 100N.

[0006] In addition, the method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to the present invention may also have the following additional technical features: According to one embodiment of the present invention, in step S2, the stamping speed on the carrier substrate is 235-260 SPM, and the stamping air pressure is 4-6 Kg / cm 2 .

[0007] The technical solution precisely controls the stamping process by setting a specific stamping speed and stamping air pressure on the carrier substrate.

[0008] According to an embodiment of the present invention, in step S3, the speed of cleaning the carrier substrate is 5-7 m / min, and the concentration range of the dilute sulfuric acid is 25±15 ml / L.

[0009] This technical solution ensures the cleaning effect of the carrier substrate by setting the cleaning speed and the concentration range of dilute sulfuric acid.

[0010] According to an embodiment of the present invention, in step S4, the carrier substrate is pressed to form a dry film, the pressing temperature is 95-120° C., the pressure range is 0.1-0.5 MPa, and the pressing speed is 4-10 m / min.

[0011] This technical solution optimizes the film pressing process by setting the film pressing temperature, pressure and speed, as well as selecting the film pressing machine.

[0012] According to an embodiment of the present invention, in step S4, a laminator is used to laminat e the upper and lower surfaces of the carrier tape substrate.

[0013] According to one embodiment of the present invention, in step S5, the upper and lower surfaces are exposed simultaneously by an exposure machine, wherein: the front side of a single-sided product is exposed to produce a contact surface pattern; the back side does not need to be exposed; the front side of a double-sided product is exposed to produce a contact surface pattern; the back side is exposed to produce an annular welding hole on the pressure welding surface; the exposure energy is 41 grids of the exposure scale, the energy of the upper exposure light is 15~25 grids; the lower exposure light is turned off, and the exposure speed is 1~3m / min.

[0014] According to one embodiment of the present invention, in step S6, the concentration of the sodium carbonate solution is 5-15 g / L, the developing temperature is 25-35° C., and the developing speed is 4-6 m / min.

[0015] The technical solution accurately controls the development process by setting the concentration of the sodium carbonate solution, the development temperature and the development speed.

[0016] According to one embodiment of the present invention, in step S7, the specific gravity of the acidic copper chloride solution is 1.1-1.4 g / cm 3 , the etching temperature range is 50~60℃, and the etching speed range is 4~6m / min.

[0017] The technical solution optimizes the etching process by setting the specific gravity, etching temperature and etching speed of the acidic cupric chloride solution.

[0018] According to an embodiment of the present invention, in step S8, the laser speed of the laser device is 5-20 m / min, and the power is 5-30 W.

[0019] This technical solution controls the laser punching process by setting the laser speed and power of the laser equipment.

[0020] According to one embodiment of the present invention, in the step S10, the plating solution for gold plating is a neutral gold plating solution, which is heated to 40-50°C, uses a current density of 0.1-0.3ASD, and the plating time is 3-8S; the plating solution for soft gold plating is a neutral gold plating solution, the carrier substrate is connected to a DC power supply as a cathode, the platinum titanium mesh is used as an anode, is heated to 60-70°C, uses a current density of 2-6ASD, and the plating time is 8-15S.

[0021] The technical solution ensures the quality and effect of the electroplating process by setting the plating solution type, temperature, current density and electroplating time of the gold plating treatment and soft gold electroplating.

[0022] Compared with the prior art, the present invention has the following beneficial effects: (1) The carrier substrate uses recyclable double-sided copper-clad PI material to replace the non-recyclable epoxy resin glass fiber cloth, which is beneficial to environmental protection and can achieve sustainable utilization of resources; (2) Double-sided copper-clad PI material is used to make carrier products. Since the copper will be etched away on the welding surface and the PI surface is rough, the problem of the top column force of a single piece of PI material not meeting the standard can be solved; (3) It can simplify the process of double-sided products, improve production efficiency and save energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a flow diagram of the method of the present invention; Figure 2 It is a comparison diagram of the top column force test of the method of the present invention. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] like Figure 1 As shown, this embodiment provides a method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, comprising the following steps: S1. Substrate selection: double-sided copper-clad PI material is selected as the carrier substrate; S2. Stamping: Stamping the carrier tape substrate to form edge serrations on the double-sided copper-clad PI material; S3, pre-treatment: cleaning the carrier substrate, first washing with water to remove surface contamination, and then micro-etching with dilute sulfuric acid to remove the surface oxide layer; S4, pressing dry film: pressing dry film on the carrier substrate, and applying the dry film to the contact surface and pressure welding surface of the carrier substrate by using a laminator; S5, exposure: expose the dry film, through vacuum suction and ultraviolet irradiation, the pattern on the film is irradiated on the dry film; S6, development: dissolve the dry film that has not been irradiated with ultraviolet light with a sodium carbonate solution, and retain the developed dry film; S7, etching: etching the developed carrier substrate, using an acidic cupric chloride solution to dissolve and corrode the copper exposed after development; S8, laser punching: laser punching is performed on the etched carrier substrate, and the PI material in the center of the copper ring is removed by laser equipment to expose the copper layer of the carrier substrate; S9, cleaning: cleaning the carrier substrate to remove the copper oxide layer; S10, electroplating: performing gold plating on the contact surface of the carrier substrate and performing soft gold electroplating on the bonding surface; S11, slitting: slitting the carrier tape substrate with a slitting device to obtain single-sided and double-sided carrier tapes with a width of 35 cm.

[0026] Example 1 like Figure 1 As shown, this embodiment provides a method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, comprising the following steps: S1. Substrate selection: Use double-sided copper-clad PI material; S2. Stamping: Use stamping equipment to stamp the double-sided copper-clad PI material to punch out edge holes; the stamping speed is 235SPM, and the stamping pressure is 4Kg / cm 2 : S3, Pretreatment: Use cleaning equipment to clean the double-sided PI material, first wash with water to remove surface contamination, and then use dilute sulfuric acid for micro-etching to remove the surface oxide layer; the cleaning speed is 5m / min, and the concentration of dilute sulfuric acid is 10ml / L: S4, Pressing dry film: Press dry film on the upper and lower surfaces of the material; use a laminator to apply the upper and lower dry films to the contact surface and welding surface of the carrier product. The laminating temperature is 95°C, the pressure is 0.1MPa, and the laminating speed is 4m / min: S5. Exposure: After the film and the material are precisely aligned in the exposure machine, the pattern on the film is irradiated onto the material through vacuum suction and ultraviolet irradiation; the upper and lower sides of the material are exposed at the same time, the front side is exposed to produce the contact surface pattern; the back side is exposed to produce the annular welding hole on the pressure welding surface, the exposure energy is measured by a 41-grid exposure ruler, the upper exposure light energy is 15 grids; the lower exposure light is turned off, and the exposure speed is 1m / min: S6, Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the position not irradiated by ultraviolet light, and retain the dry film in the position irradiated by ultraviolet light. The concentration of sodium carbonate solution is 5g / L, the development temperature is 25℃, and the development speed is 4m / min: S7, Etching: The copper exposed after development is dissolved and corroded with acid copper chloride. The specific gravity of the acid copper chloride solution is 1.1g / cm 3 , etching temperature is 50℃, etching speed is 4m / min: S8, Laser punching: Use laser equipment to punch blind holes on the product's welded surface, remove the PI in the center of the copper ring, and expose the copper layer. The laser speed is 5m / min and the power is 5W: S9, cleaning: Use cleaning equipment to clean the product and remove the copper oxide layer. The cleaning speed is 5m / min; S10, electroplating: gold-plating the contact surface of the product, using Deli neutral gold plating solution or other finished electroplating solution, heated to 40°C, and electroplated at 0.1ASD current density for 3S; soft gold electroplating is performed on the pressure welding surface, using Deli neutral gold plating solution or other finished electroplating solution, connecting the product to the cathode of the DC power supply, and using the platinum titanium mesh as the anode to electroplate the pressure welding surface of the product, heated to 60°C, and electroplated at 2ASD current density for 8S; S11. Cutting: Use cutting equipment to cut the product into finished products with a width of 35 cm.

[0027] Example 2 like Figure 1 As shown, this embodiment provides a method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, comprising the following steps: S1. Substrate selection: Use double-sided copper-clad PI material; S2. Stamping: Use stamping equipment to stamp the double-sided PI material to punch out the edge holes; the stamping speed is 260SPM, and the stamping air pressure is 6Kg / cm 2 : S3, Pretreatment: Use cleaning equipment to clean the double-sided PI material, first wash with water to remove surface contamination, and then use dilute sulfuric acid for micro-etching to remove the surface oxide layer; the cleaning speed is 7m / min, and the concentration of dilute sulfuric acid is 40ml / L: S4, Pressing dry film: Press dry film on the upper and lower surfaces of the material; use a laminator to apply the upper and lower dry films to the contact surface and welding surface of the carrier product. The laminating temperature is 120℃, the pressure is 0.5MPa, and the laminating speed is 10m / min: S5. Exposure: After the film and the material are precisely aligned in the exposure machine, the pattern on the film is irradiated onto the material through vacuum suction and ultraviolet irradiation; the upper and lower sides of the material are exposed at the same time, the front side is exposed to produce the contact surface pattern; the back side is exposed to produce the annular welding hole on the pressure welding surface, the exposure energy is measured by a 41-grid exposure ruler, the upper exposure light energy is 25 grids; the lower exposure light is turned off, and the exposure speed is 3m / min: S6, Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the position not irradiated by ultraviolet light, and retain the dry film in the position irradiated by ultraviolet light. The concentration of sodium carbonate solution is 15g / L, the development temperature is 35℃, and the development speed is 6m / min: S7, etching: The copper exposed after development is dissolved and corroded with acid copper chloride; the specific gravity of the acid copper chloride solution is 1.4g / cm 3 , etching temperature is 60℃, etching speed is 6m / min: S8, Laser punching: Use laser equipment to punch blind holes on the product's welded surface, remove the PI in the center of the copper ring, and expose the copper layer. The laser speed is 20min / m and the power is 30W: S9, cleaning: Use cleaning equipment to clean the product and remove the copper oxide layer. The cleaning speed is 7m / min; S10, electroplating: gold-plating the contact surface of the product, using Deli neutral gold plating solution or other finished electroplating solution, heated to 50°C, and electroplated at 0.3ASD current density for 8S; soft gold electroplating is performed on the pressure welding surface, using Deli neutral gold plating solution or other finished electroplating solution, connecting the product to the cathode of the DC power supply, and using the platinum titanium mesh as the anode to electroplate the pressure welding surface of the product, heated to 70°C, and electroplated at 6ASD current density for 15S; S11. Cutting: Use cutting equipment to cut the product into finished products with a width of 35 cm.

[0028] Example 3 like Figure 1 As shown, this embodiment provides a method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, comprising the following steps: S1. Substrate selection: Use double-sided copper-clad PI material; S2. Stamping: Use stamping equipment to stamp the double-sided copper-clad PI material to punch out the edge holes; the stamping speed is 245SPM, and the stamping pressure is 5Kg / cm 2 : S3, Pretreatment: Use cleaning equipment to clean the double-sided PI material, first wash with water to remove surface contamination, and then use dilute sulfuric acid for micro-etching to remove the surface oxide layer; the cleaning speed is 6m / min, and the concentration of dilute sulfuric acid is 25ml / L: S4, Pressing dry film: Press dry film on the upper and lower surfaces of the material; use a laminator to apply the upper and lower dry films to the contact surface and welding surface of the carrier product. The laminating temperature is 110℃, the pressure is 0.3MPa, and the laminating speed is 7m / min: S5. Exposure: After the film and the material are precisely aligned in the exposure machine, the pattern on the film is irradiated onto the material through vacuum suction and ultraviolet irradiation; the upper and lower sides of the material are exposed at the same time, the front side is exposed to produce the contact surface pattern; the back side is exposed to produce the annular welding holes and the welding surface pattern on the pressure welding surface. The exposure energy is measured by a 41-grid exposure ruler, and the upper exposure light energy is 20 grids; the lower exposure light is turned off, and the exposure speed is 2m / min: S6, Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the position not irradiated by ultraviolet light, and retain the dry film in the position irradiated by ultraviolet light. The concentration of sodium carbonate solution is 10g / L, the development temperature is 30℃, and the development speed is 5m / min: S7, etching: The copper exposed after development is dissolved and corroded with acid copper chloride. The specific gravity of the acid copper chloride solution is 1.2g / cm 3 , etching temperature is 55℃, etching speed is 5m / min: S8, Laser punching: Use laser equipment to punch blind holes on the product's welded surface, remove the PI in the center of the copper ring, and expose the copper layer. The laser speed is 10min / m and the power is 20W: S9, cleaning: Use cleaning equipment to clean the product and remove the copper oxide layer. The cleaning speed is 6m / min; S10, electroplating: gold-plating the contact surface of the product, using Deli neutral gold plating solution or other finished electroplating solution, heated to 45°C, and electroplated at 0.2ASD current density for 6S; soft gold electroplating is performed on the pressure welding surface, using Deli neutral gold plating solution or other finished electroplating solution, connecting the product to the cathode of the DC power supply, and using the platinum titanium mesh as the anode to electroplate the pressure welding surface of the product, heated to 65°C, and electroplated at 4ASD current density for 12S; S11. Cutting: Use cutting equipment to cut the product into finished products with a width of 35 cm.

[0029] Comparative Example 1 This comparative example 1 provides a method for preparing a single-sided carrier tape using a PI material with adhesive, comprising the following steps: S1. Substrate selection: Use traditional PI material with adhesive; S2. Stamping: Use stamping equipment to stamp the PI material with glue to punch out tooth holes, welding holes, and positioning holes; the stamping speed is 235SPM, and the stamping air pressure is 4Kg / cm 2 : S3. Copper lamination: Use a copper lamination machine to laminate 35μm copper foil onto the surface of a single-sided substrate. The copper lamination roller temperature is 120°C, the copper lamination pressure is 0.4MPa, and the speed is 6m / min. S4. Pretreatment: Use cleaning equipment to clean the glass fiber cloth material. First, wash with water to remove surface contamination, and then use dilute sulfuric acid to perform micro-etching to remove the surface oxide layer; the cleaning speed is 5m / min, and the concentration of dilute sulfuric acid is 10ml / L: S5, Pressing dry film: Press dry film on the upper and lower surfaces of the material; use a laminator to apply the upper and lower dry films to the contact surface and welding surface of the carrier product. The laminating temperature is 95°C, the pressure is 0.1MPa, and the laminating speed is 4m / min: S6, Exposure: In the exposure machine, after the film and the material are accurately aligned, the pattern on the film is irradiated on the material through vacuum suction and ultraviolet irradiation; the upper and lower sides of the material are exposed at the same time, and the front side is exposed to produce the contact surface pattern; the back side does not need to be exposed, and the exposure energy is measured by a 41-grid exposure ruler, and the upper exposure light energy is 15 grids. The lower exposure light is turned off, and the exposure speed is 1m / min: S7, Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the position not irradiated by ultraviolet light, and retain the dry film in the position irradiated by ultraviolet light. The concentration of sodium carbonate solution is 5g / L, the development temperature is 25℃, and the development speed is 4m / min: S8, etching: The copper exposed after development is dissolved and corroded with acid copper chloride; the specific gravity of the acid copper chloride solution is 1.1g / cm 3 , etching temperature is 50℃, etching speed is 4m / min: S9, electroplating: gold-plating the contact surface of the product, using Deli neutral gold plating solution or other finished electroplating solution, heated to 50°C, and electroplated at 0.3ASD current density for 8S; soft gold electroplating is performed on the pressure welding surface, using Deli neutral gold plating solution or other finished electroplating solution, connecting the product to the cathode of the DC power supply, and using the platinum titanium mesh as the anode to electroplate the pressure welding surface of the product, heated to 70°C, and electroplated at 6ASD current density for 15S; S10, cutting: Use cutting equipment to cut the product into finished products with a width of 35cm.

[0030] Comparative Example 2 This comparative example 2 provides a method for preparing a double-sided smart card carrier tape using a copper-clad laminate PI material with adhesive, comprising the following steps: S1. Substrate selection: Production process of single-sided smart card carrier tape using copper clad laminate PI material with adhesive; S2. Stamping: Use stamping equipment to stamp the copper clad laminate material to punch out tooth holes, welding holes, and positioning holes; the stamping speed is 235SPM, and the stamping pressure is 4Kg / cm 2 : S3. Pretreatment: Use cleaning equipment to clean the copper clad laminate material. First, wash with water to remove surface contamination, and then use dilute sulfuric acid for micro-etching to remove the surface oxide layer; the cleaning speed is 5m / min, and the concentration of dilute sulfuric acid is 10ml / L: S4, Pressing dry film: Press dry film on the material; use a laminating machine to apply the upper dry film to the contact surface of the carrier product, the laminating temperature is 95℃, the pressure is 0.1MPa, and the laminating speed is 4m / min: S5. Exposure: After the film and the material are precisely aligned in the exposure machine, the pattern on the film is irradiated onto the material through vacuum suction and ultraviolet irradiation; the material is exposed to produce contact surface patterns; the exposure energy is measured using a 41-grid exposure scale, and the upper exposure light energy is 15 grids; the lower exposure light is turned off, and the exposure speed is 1m / min: S6, Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the position not irradiated by ultraviolet light, and retain the dry film in the position irradiated by ultraviolet light. The concentration of sodium carbonate solution is 5g / L, the development temperature is 25℃, and the development speed is 4m / min: S7, etching: The copper exposed after development is dissolved and corroded with acid copper chloride; the specific gravity of the acid copper chloride solution is 1.1g / cm 3 , etching temperature is 50℃, etching speed is 4m / min: S8. Copper lamination: Use a copper lamination machine to laminate 35μm copper foil onto the surface of a single-sided substrate. The copper lamination roller temperature is 120°C, the copper lamination pressure is 0.4MPa, and the speed is 6m / min. S9, Pre-treatment: Use cleaning equipment to clean the glass fiber cloth material, first wash with water to remove surface contamination, and then use dilute sulfuric acid for micro-etching to remove the surface oxide layer; the cleaning speed is 5m / min, and the concentration of dilute sulfuric acid is 10ml / L: S10, Pressing dry film: Press dry film on the upper and lower surfaces of the material; use a laminator to apply the upper and lower dry films to the contact surface and welding surface of the carrier product. The laminating temperature is 95°C, the pressure is 0.1MPa, and the laminating speed is 4m / min: S11. Exposure: After the film and the material are precisely aligned in the exposure machine, the pattern on the film is irradiated on the material through vacuum suction and ultraviolet irradiation; the upper and lower sides of the material are exposed at the same time, and the front side is exposed to produce the contact surface pattern; the back side does not need to be exposed, and the exposure energy is measured by a 41-grid exposure ruler, and the upper exposure light energy is 15 grids. The lower exposure light is turned off, and the exposure speed is 1m / min: S12, Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the position not irradiated by ultraviolet rays, and retain the dry film in the position irradiated by ultraviolet rays. The concentration of sodium carbonate solution is 5g / L, the development temperature is 25℃, and the development speed is 4m / min: S13, etching: The copper exposed after development is dissolved and corroded with acid copper chloride; the specific gravity of the acid copper chloride solution is 1.1g / cm 3 , etching temperature is 50℃, etching speed is 4m / min: S14, electroplating: gold-plating the contact surface of the product, using Deli neutral gold plating solution or other finished electroplating solution, heated to 50°C, and electroplated at 0.3ASD current density for 8S; soft gold electroplating is performed on the pressure welding surface, using Deli neutral gold plating solution or other finished electroplating solution, connecting the product to the cathode of the DC power supply, and using the platinum titanium mesh as the anode to electroplate the pressure welding surface of the product, heated to 70°C, and electroplated at 6ASD current density for 15S; S15, cutting: Use cutting equipment to cut the product into finished products with a width of 35cm.

[0031] Combination Figure 2 The comparison chart of the ejector force test is given. It can be seen from the examples 1 to 3 that the ejector force can reach 95.8N, 100.6N, and 97.4N respectively, that is, the ejector force can meet the standard and can reach 100N on average; while it can be seen from the comparative examples 1 to 2 that the ejector force only reaches 25.2N and 28N respectively, that is, the ejector force is lower than 28N on average, far from the standard. This proves that the copper will be etched away by the pressure welding surface of the present invention, and the copper teeth will remain on the surface of the PI, making the surface of the PI rough, so the expected effect of the ejector force is better.

[0032] In addition to the difference in the top column force, it can be seen from Comparative Example 2 that the production process of pre-treatment-pressing dry film-exposure-development-etching for making double-sided IC card carrier tape in Comparative Example 2 needs to be repeated twice, and the production efficiency is low; the present invention uses double-sided copper-clad PI material, which only requires one production process, and the production efficiency is high. In addition, the existing IC card carrier tape production uses epoxy resin glass fiber cloth, which is a thermosetting material and cannot be recycled. Long-term use brings a huge burden to the environment and is an environmentally unfriendly material, while PI material is a thermoplastic material that can be recycled and is an environmentally friendly material.

[0033] Although the present invention has been described in detail by referring to the accompanying drawings and in combination with the preferred embodiments, the present invention is not limited thereto. Without departing from the spirit and essence of the present invention, a person of ordinary skill in the art may make various equivalent modifications or substitutions to the embodiments of the present invention, and these modifications or substitutions shall be within the scope of the present invention. Any person of ordinary skill in the art may easily think of changes or substitutions within the technical scope disclosed by the present invention, and these shall be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. A method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, characterized in that: The steps include: S1. Substrate selection: double-sided copper-clad PI material is selected as the carrier substrate; S2. Stamping: Stamping the carrier tape substrate to form edge serrations on the double-sided copper-clad PI material; S3, pre-treatment: cleaning the carrier substrate, first washing with water to remove surface contamination, and then micro-etching with dilute sulfuric acid to remove the surface oxide layer; S4, pressing dry film: pressing dry film on the carrier substrate, and applying the dry film to the contact surface and pressure welding surface of the carrier substrate by using a laminator; S5, exposure: expose the dry film, through vacuum suction and ultraviolet irradiation, the pattern on the film is irradiated on the dry film; S6, development: dissolve the dry film that has not been irradiated with ultraviolet light with a sodium carbonate solution, and retain the developed dry film; S7, etching: etching the developed carrier substrate, using an acidic cupric chloride solution to dissolve and corrode the copper exposed after development; S8, laser punching: laser punching is performed on the etched carrier substrate, and the PI material in the center of the copper ring is removed by laser equipment to expose the copper layer of the carrier substrate; S9, cleaning: cleaning the carrier substrate to remove the copper oxide layer, the cleaning speed is 5~7m / min; S10, electroplating: performing gold plating on the contact surface of the carrier substrate and performing soft gold electroplating on the bonding surface; S11, slitting: slitting the carrier tape substrate with a slitting device to obtain single-sided and double-sided carrier tapes with a width of 35 cm.

2. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to claim 1, characterized in that: In step S2, the stamping speed on the carrier substrate is 235-260 SPM, and the stamping pressure is 4-6 Kg / cm 2 .

3. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to claim 1, characterized in that: In the step S3, the speed of cleaning the carrier substrate is 5-7 m / min, and the concentration range of the dilute sulfuric acid is 25±15 ml / L.

4. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to claim 1, characterized in that: In the step S4, the carrier substrate is pressed to form a dry film, the pressing temperature is 95-120° C., the pressure range is 0.1-0.5 MPa, and the pressing speed is 4-10 m / min.

5. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to claim 1, characterized in that: In the step S4, a laminating machine is used to laminate the upper and lower surfaces of the carrier tape substrate.

6. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material as claimed in claim 5, characterized in that: In step S5, the upper and lower surfaces are exposed simultaneously by an exposure machine, wherein: the front side of the single-sided carrier is exposed to produce a contact surface pattern; the back side does not need to be exposed; the front side of the double-sided carrier is exposed to produce a contact surface pattern; the back side is exposed to produce an annular welding hole on the pressure welding surface; the exposure energy is 41 grids of the exposure scale, the energy of the upper exposure light is 15~25 grids; the lower exposure light is turned off, and the exposure speed is 1~3m / min.

7. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to claim 1, characterized in that: In step S6, the concentration of the sodium carbonate solution is 5-15 g / L, the developing temperature is 25-35° C., and the developing speed is 4-6 m / min.

8. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to claim 1, characterized in that: In step S7, the specific gravity of the acidic copper chloride solution is 1.1-1.4 g / cm 3 , the etching temperature range is 50~60℃, and the etching speed range is 4~6m / min.

9. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to claim 1, characterized in that: In step S8, the laser speed of the laser device is 5-20 m / min, and the power is 5-30 W.

10. The method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material according to claim 1, characterized in that: In the step S10, the plating solution for gold plating is a neutral gold plating solution, which is heated to 40-50°C, uses a current density of 0.1-0.3ASD, and the plating time is 3-8S; the plating solution for soft gold plating is a neutral gold plating solution, the carrier substrate is connected to a DC power supply as a cathode, the platinum titanium mesh is used as an anode, is heated to 60-70°C, uses a current density of 2-6ASD, and the plating time is 8-15S.

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