Full tellurium-based self-powered artificial pain receptor and preparation method thereof

Abstract

The invention provides a full-tellurium-based self-powered artificial pain receptor and a preparation method thereof, and belongs to the technical field of micro-nano processing and device preparation. The full-tellurium-based self-powered artificial pain receptor comprises a self-powered device and a threshold memristor which are connected in series, the self-powered device comprises an upper electrode, an insulating layer, a piezoelectric layer and a lower electrode which are sequentially arranged from top to bottom, the piezoelectric layer is a two-dimensional tellurium nanosheet layer formed by low-temperature hydrothermal synthesis, and the threshold memristor is arranged between the upper electrode and the lower electrode. The threshold memristor comprises an upper electrode, a semiconductor function layer and a lower electrode which are sequentially arranged from top to bottom, wherein the semiconductor function layer is a two-dimensional tellurium nanosheet layer formed by high-temperature hydrothermal synthesis. The self-powered device is obtained by taking the Te nanosheet prepared by a low-temperature hydrothermal method as a piezoelectric layer, the two-dimensional threshold memristor device is obtained by taking the Te nanosheet prepared by a high-temperature hydrothermal method as a semiconductor functional layer, and the two devices are connected in series to serve as a self-powered artificial pain receptor without an external power supply, so that the power consumption of the system is reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of micro-nano processing and device preparation, and in particular relates to an all-tellurium-based self-powered artificial pain receptor and a preparation method thereof. Background Art

[0002] The integration and collaboration of pain receptors, neurons, and synapses in the biological nervous system enable humans to effectively perceive and process harmful information, thereby avoiding danger. Inspired by the biological nervous system, neuromorphic electronic devices include electrolyte-based transistors, memristors that rely on foreign ions, and halide perovskite memristors. Current pain receptors are all sensors connected in series with neuromorphic electronic devices, which require additional power supply and have the problem of high system power consumption. Therefore, it is worthwhile to develop self-powered artificial receptors, which can greatly reduce the power consumption of the system.

[0003] Self-powered devices can include many types, such as triboelectric generators, piezoelectric generators, etc. Two-dimensional tellurium materials are the best candidates for building piezoelectric devices because of their large piezoelectric coefficients. Tellurium materials also have the characteristics of electrically stimulated phase change. When voltage is applied or removed, a phase change will occur, thereby generating a resistance change. Therefore, how to combine the two to build a self-powered artificial receptor system is an effective way to achieve a low-power neuromorphic tactile system. Summary of the invention

[0004] In order to solve the problem of active power supply of the above-mentioned sensor system, the present invention proposes an all-tellurium-based self-powered artificial pain receptor and a preparation method thereof.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] An all-tellurium-based self-powered artificial pain receptor, comprising a self-powered device and a threshold memristor connected in series;

[0007] The self-powered device comprises an upper electrode, an insulating layer, a piezoelectric layer and a lower electrode arranged in sequence from top to bottom, wherein the piezoelectric layer is a two-dimensional tellurium (Te) nanosheet layer synthesized by low-temperature hydrothermal synthesis;

[0008] The threshold memristor comprises an upper electrode, a semiconductor functional layer and a lower electrode which are arranged in sequence from top to bottom, and the semiconductor functional layer is a two-dimensional tellurium (Te) nanosheet layer synthesized by high-temperature hydrothermal synthesis.

[0009] Furthermore, in the self-powered device, the upper electrode and the lower electrode are both copper (Cu) electrodes, and the insulating layer is a polydimethylsiloxane (PDMS) layer.

[0010] Furthermore, in the threshold memristor, the upper electrode and the lower electrode are both gold (Au) electrodes.

[0011] Furthermore, the threshold memristor further includes a substrate, and the lower electrode is etched on the substrate.

[0012] The second technical solution of the present invention:

[0013] A method for preparing the all-tellurium-based self-powered artificial pain receptor comprises the following steps:

[0014] (1) drop-coating a tellurium nanosheet solution on a copper electrode sheet, drying it to obtain a piezoelectric layer and a lower electrode, placing a polydimethylsiloxane (PDMS) film on the upper layer of the piezoelectric layer, and covering the electrode sheet on the polydimethylsiloxane film to obtain a self-powered device;

[0015] (2) Using the substrate as a substrate, photolithography of a gold electrode, and then transferring a tellurium nanosheet to the center area of ​​the lower electrode, and transferring the upper electrode to the top of the tellurium nanosheet layer, to obtain a threshold memristor;

[0016] (3) After the self-powered device and the threshold memristor are connected in series, the all-tellurium-based self-powered artificial pain receptor is obtained.

[0017] Furthermore, the tellurium nanosheet solution in step (1) is prepared by a low-temperature hydrothermal method, which specifically includes the following steps:

[0018] Dissolve ammonia water (NH3·H2O) and ethylenediaminetetraacetic acid disodium salt (EDTA-Na2) in water to obtain a mixed solution A;

[0019] Dissolve sodium hydroxide (NaOH), tellurium oxide (TeO2) and cetyltrimethylammonium bromide (CTAB) in water to obtain a mixed solution B;

[0020] After the A mixed solution and the B mixed solution are evenly mixed, the pH value of the solution is adjusted to be alkaline, and hydrazine hydrate (N2H4·H2O) is added, and the reaction is sealed to obtain tellurium nanosheets, which are then dissolved in water to obtain the tellurium nanosheet solution.

[0021] Furthermore, the volume ratio of the A mixed solution to the B mixed solution is 5:4, and the amount ratio of ammonia water, disodium ethylenediaminetetraacetic acid and water in the A mixed solution is 2mL:0.15g:25mL;

[0022] The amount ratio of sodium hydroxide, tellurium oxide, hexadecyltrimethylammonium bromide and water in the mixed solution B is 0.08 g: 0.08 g: 0.4 g: 20 mL;

[0023] The sealing reaction was carried out at a temperature of 50° C. for 5 hours.

[0024] Furthermore, the tellurium nanosheets in step (2) are prepared by a high-temperature hydrothermal method, which specifically includes the following steps:

[0025] Sodium tellurite (Na2TeO3) and polyvinyl pyrrolidone (PVP) are dissolved in water, and ammonia water (NH3·H2O) and hydrazine hydrate (N2H4·H2O) are added and stirred evenly to obtain a mixed solution, and then sealed for reaction to obtain the tellurium nanosheets.

[0026] Furthermore, the ratio of sodium tellurite, polyvinyl pyrrolidone, water, ammonia water and hydrazine hydrate in the mixed solution is 0.05 g: 4 g: 16 mL: 4 mL: 1 mL;

[0027] The sealing reaction was carried out at a temperature of 240° C. and for 36 hours.

[0028] Furthermore, in step (1), the concentration of the tellurium nanosheet solution is 0.01 g / mL, and the amount of the tellurium nanosheet solution applied to the electrode sheet is 2 mL / 25 cm 2 .

[0029] Furthermore, in step (2), the substrate is a SiO2 substrate or a Si substrate, which needs to be cleaned before photolithography, and the cleaning steps are as follows:

[0030] ① Immerse the substrate in trichloroethylene, ultrasonically clean it, and blow it dry with nitrogen; ② Immerse the substrate in acetone, ultrasonically clean it, and blow it dry with nitrogen; ③ Immerse the substrate in ethanol, ultrasonically clean it, and blow it dry with nitrogen; ④ Immerse the substrate in secondary deionized water, ultrasonically clean it, and blow it dry with nitrogen. The ultrasonic power is 80W, the ultrasonic time is 10 minutes for each step, and the nitrogen purge is 5 seconds.

[0031] Furthermore, in step (2), the photolithography of the lower electrode comprises the following steps:

[0032] ① Place the cleaned substrate on a hot plate and bake at 80°C for 3 minutes; ② Spin-coat photoresist on the dried substrate, and then pre-bake the photoresist to dry it at 120°C for 90 seconds; ③ Use a UV maskless direct write lithography machine (model: MLA100) for patterning pretreatment, and the pattern is a single electrode; ④ Soak in developer and develop to obtain a photoresist patterned channel for 1 minute, then rinse with isopropanol for 30 seconds, and blow dry with nitrogen for 5 seconds; Use a vacuum coating machine to thermally evaporate and deposit a gold electrode; ⑤ Use acetone soaking and ultrasonic treatment to remove the photoresist, then rinse with isopropanol for 30 seconds, and blow dry with nitrogen for 5 seconds to obtain the lower electrode.

[0033] Furthermore, in step (2), the process of transferring the tellurium nanosheets to the lower electrode and the upper electrode to the tellurium nanosheet layer is performed using a thermal release tape at a temperature of 100° C. for 10 minutes.

[0034] Compared with the prior art, the present invention has the following advantages and technical effects:

[0035] (1) The traditional tactile sensing system requires an external power source U. The front-end device is a pressure sensor. By pressing the pressure sensor, the resistance of the pressure sensor decreases, and the voltage of the pressure sensor decreases. Therefore, in this system, the voltage obtained by the threshold device will increase, causing the threshold device to generate an output current. The tactile sensing system of the present invention replaces the traditional pressure sensor with a self-powered sensor, and does not require an external power supply, because the energy consumption of the entire circuit is reduced.

[0036] (2) The present invention uses Te nanosheets prepared by low-temperature hydrothermal method as piezoelectric layer to obtain a self-powered device, and uses Te nanosheets prepared by high-temperature hydrothermal method as semiconductor functional layer to obtain a two-dimensional threshold memristor device. The two devices are connected in series to form a self-powered artificial pain receptor without an external power supply, thereby reducing the power consumption of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0038] Figure 1 It is a schematic structural diagram of the self-powered device in the all-tellurium-based self-powered artificial pain receptor of the present invention;

[0039] Figure 2 It is a schematic diagram of the structure of the threshold memristor in the all-tellurium-based self-powered artificial pain receptor of the present invention;

[0040] Figure 3 Schematic diagram of a self-powered device connected in series with a threshold memristor to obtain a fully tellurium-based self-powered artificial pain receptor;

[0041] Figure 4 This is the time-voltage curve of the self-powered device prepared in Example 1 of the present invention;

[0042] Figure 5 The current-voltage characteristic curve of the threshold memristor prepared in Example 1 of the present invention;

[0043] Figure 6 This is a current characteristic curve detected by the threshold memristor in the all-tellurium-based self-powered artificial pain receptor obtained by connecting the self-powered device and the threshold memristor in series in Example 1 of the present invention. DETAILED DESCRIPTION

[0044] Various exemplary embodiments of the present invention will now be described in detail. This detailed description should not be considered as limiting the present invention, but should be understood as a more detailed description of certain aspects, features, and embodiments of the present invention.

[0045] It should be understood that the terms described in the present invention are only for describing special embodiments and are not intended to limit the present invention. In addition, for the numerical range in the present invention, it should be understood that each intermediate value between the upper and lower limits of the scope is also specifically disclosed. Each smaller range between the intermediate value in any stated value or stated range and any other stated value or intermediate value in the described range is also included in the present invention. The upper and lower limits of these smaller ranges can be independently included or excluded in the scope.

[0046] Unless otherwise indicated, all technical and scientific terms used herein have the same meanings as those generally understood by those skilled in the art. Although the present invention describes only preferred methods and materials, any methods and materials similar or equivalent to those described herein may also be used in the implementation or testing of the present invention. All documents mentioned in this specification are incorporated by reference to disclose and describe the methods and / or materials associated with the documents. In the event of a conflict with any incorporated document, the content of this specification shall prevail.

[0047] It will be apparent to those skilled in the art that various modifications and variations may be made to the specific embodiments of the present invention description without departing from the scope or spirit of the present invention. Other embodiments derived from the present invention description will be apparent to those skilled in the art. The present invention description and examples are exemplary only.

[0048] The words “include,” “including,” “have,” “contain,” etc. used in this document are open-ended terms, meaning including but not limited to.

[0049] The embodiment of the present invention provides a fully tellurium-based self-powered artificial pain receptor, comprising a self-powered device and a threshold memristor connected in series;

[0050] The self-powered device comprises an upper electrode, an insulating layer, a piezoelectric layer and a lower electrode arranged in sequence from top to bottom, wherein the piezoelectric layer is a two-dimensional tellurium nanosheet (Te NFs) layer synthesized by low-temperature hydrothermal synthesis;

[0051] The threshold memristor comprises an upper electrode, a semiconductor functional layer and a lower electrode which are arranged in sequence from top to bottom, and the semiconductor functional layer is a two-dimensional tellurium (Te) nanosheet layer synthesized by high-temperature hydrothermal synthesis.

[0052] In a preferred embodiment of the present invention, in the self-powered device, the upper electrode and the lower electrode are both copper (Cu) electrodes, and the insulating layer is a polydimethylsiloxane (PDMS) layer.

[0053] In a preferred embodiment of the present invention, in the threshold memristor, the upper electrode and the lower electrode are both gold (Au) electrodes.

[0054] In a preferred embodiment of the present invention, the threshold memristor further includes a substrate, and the lower electrode is etched on the substrate.

[0055] More specifically, the self-powered device in the embodiment of the present invention includes a copper (Cu) electrode, a PDMS layer, a Te NFs layer and a copper (Cu) electrode arranged in sequence from top to bottom. Figure 1 ;

[0056] In the embodiment of the present invention, the threshold memristor uses SiO2 or Si as a substrate, and includes a gold (Au) electrode, a two-dimensional tellurium (Te) nanosheet layer and a gold (Au) electrode arranged in sequence from top to bottom. The specific structural schematic diagram is shown in FIG. Figure 2 ;

[0057] Figure 3 Schematic diagram of a fully tellurium-based self-powered artificial pain receptor obtained by connecting a self-powered device in series with a threshold memristor.

[0058] The embodiment of the present invention further proposes a method for preparing the all-tellurium-based self-powered artificial pain receptor, comprising the following steps:

[0059] (1) drop-coating a tellurium nanosheet solution on a copper electrode sheet, drying it to obtain a piezoelectric layer and a lower electrode, placing a polydimethylsiloxane (PDMS) film on the upper layer of the piezoelectric layer, and covering the electrode sheet on the polydimethylsiloxane film to obtain a self-powered device;

[0060] (2) Using the substrate as a substrate, photolithography of a gold electrode, and then transferring a tellurium nanosheet to the center area of ​​the lower electrode, and transferring the upper electrode to the top of the tellurium nanosheet layer, to obtain a threshold memristor;

[0061] (3) After the self-powered device and the threshold memristor are connected in series, the all-tellurium-based self-powered artificial pain receptor is obtained.

[0062] In a preferred embodiment of the present invention, the tellurium nanosheet solution in step (1) is prepared by a low-temperature hydrothermal method, which specifically includes the following steps:

[0063] Dissolve ammonia water (NH3·H2O) and ethylenediaminetetraacetic acid disodium salt (EDTA-Na2) in water to obtain a mixed solution A;

[0064] Dissolve sodium hydroxide (NaOH), tellurium oxide (TeO2) and cetyltrimethylammonium bromide (CTAB) in water to obtain a mixed solution B;

[0065] After the A mixed solution and the B mixed solution are evenly mixed, the pH value of the solution is adjusted to be alkaline, and hydrazine hydrate (N2H4·H2O) is added to seal the reaction to obtain tellurium nanosheets, which are then dissolved in water to obtain the tellurium nanosheet solution.

[0066] More preferably, the volume ratio of the A mixed solution to the B mixed solution is 5:4.

[0067] The ratio of ammonia water, ethylenediaminetetraacetic acid disodium salt and water in the mixed solution A is 2mL:0.15g:25mL;

[0068] The dosage ratio of sodium hydroxide, tellurium oxide, hexadecyltrimethylammonium bromide and water in the mixed solution B is 0.08 g: 0.08 g: 0.4 g: 20 mL; the temperature of the sealed reaction is 50° C. and the time is 5 hours.

[0069] In a preferred embodiment of the present invention, the tellurium nanosheets in step (2) are prepared by a high temperature hydrothermal method, which specifically includes the following steps:

[0070] Sodium tellurite (Na2TeO3) and polyvinyl pyrrolidone (PVP) are dissolved in deionized water, and ammonia water (NH3·H2O) and hydrazine hydrate (N2H4·H2O) are added and stirred evenly to obtain a mixed solution, and then sealed for reaction to obtain the tellurium nanosheets.

[0071] More preferably, the ratio of sodium tellurite, polyvinyl pyrrolidone, water, ammonia water and hydrazine hydrate in the mixed solution is 0.05 g: 4 g: 16 mL: 4 mL: 1 mL;

[0072] The sealing reaction was carried out at a temperature of 240° C. and for 36 hours.

[0073] In a preferred embodiment of the present invention, in step (1), the concentration of the tellurium nanosheet solution is 0.01 g / mL, and the drop coating amount of the tellurium nanosheet solution on the electrode sheet is 2 mL / 25 cm 2 In a preferred embodiment of the present invention, in step (2), the substrate is a SiO2 substrate or a Si substrate, which needs to be cleaned before photolithography, and the cleaning steps are as follows:

[0074] ① Immerse the substrate in trichloroethylene, ultrasonically clean it, and blow it dry with nitrogen; ② Immerse the substrate in acetone, ultrasonically clean it, and blow it dry with nitrogen; ③ Immerse the substrate in ethanol, ultrasonically clean it, and blow it dry with nitrogen; ④ Immerse the substrate in secondary deionized water, ultrasonically clean it, and blow it dry with nitrogen. The ultrasonic power is 80W, the ultrasonic time is 10 minutes for each step, and the nitrogen purge is 5 seconds.

[0075] In a preferred embodiment of the present invention, in step (2), the photolithography of the lower electrode comprises the following steps:

[0076] ① Place the cleaned substrate on a hot plate and bake at 80°C for 3 minutes; ② Spin-coat photoresist on the dried SiO2 substrate, and then pre-bake the photoresist to dry it at 120°C for 90 seconds; ③ Use a UV maskless direct-write lithography machine (model: MLA100) for patterning pretreatment, and the pattern is a single electrode; ④ Soak in developer and develop to obtain a photoresist patterned channel for 1 minute, then rinse with isopropanol for 30 seconds, and blow dry with nitrogen for 5 seconds; Use a vacuum coating machine to thermally evaporate and deposit a gold electrode; ⑤ Use acetone soaking and ultrasonic treatment to remove the photoresist, then rinse with isopropanol for 30 seconds, and blow dry with nitrogen for 5 seconds to obtain the lower electrode.

[0077] In a preferred embodiment of the present invention, in step (2), the process of transferring the tellurium nanosheet solution to the lower electrode and the upper electrode to the top of the tellurium nanosheet layer uses a thermal release tape at a temperature of 100° C. for 10 minutes.

[0078] All raw materials used in the examples of the present invention are commercially available.

[0079] The technical solution of the present invention is further illustrated by the following embodiments.

[0080] Example 1

[0081] A preparation method of an all-tellurium-based self-powered artificial pain receptor comprises the following steps:

[0082] 1. Preparation of self-powered devices

[0083] (1) Preparation of tellurium nanosheets (Te NFs) solution

[0084] Add 2 mL of ammonia (NH3·H2O) and 0.15 g of ethylenediaminetetraacetic acid disodium salt (EDTA-Na2) to 25 mL of deionized water and stir for 5 min to obtain a transparent mixed solution A.

[0085] 0.08 g of sodium hydroxide (NaOH), 0.08 g of tellurium oxide (TeO2) and 0.4 g of cetyltrimethylammonium bromide (CTAB) were added to 20 mL of deionized water and stirred for 5 min to obtain a transparent mixed solution B;

[0086] The B mixed solution was added to the A mixed solution and mixed evenly, and then nitric acid was added to adjust the pH value of the solution to alkaline (pH = 10), and then 3 mL of hydrazine hydrate (N2H4·H2O) was added, and the mixed solution was sealed in a glass bottle, placed in a 50°C oven for sealed reaction for 5 hours, and then washed with water and ethanol, and vacuum baked to obtain tellurium nanosheets; the tellurium nanosheets were dissolved in water to obtain a tellurium nanosheet (Te NFs) solution with a mass concentration of 0.1 g of nanosheets dissolved in 10 mL of water.

[0087] (2) Preparation of polydimethylsiloxane (PDMS) film

[0088] Polydimethylsiloxane (PDMS, brand: Dow Corning, model: DC184 / SYLGARD184, manufacturer: Dow Chemical, USA) was cured at room temperature to obtain a polydimethylsiloxane (PDMS) film with a thickness of 0.3 cm.

[0089] (3) Preparation of self-powered devices

[0090] Take a 5cm piece 2 The copper electrode is used as the lower electrode;

[0091] A tellurium nanosheet (Te NFs) solution was drop-coated on the surface of the lower electrode with a drop amount of 2 mL, and then placed in an oven and dried at 80°C for 2 h to form a Te NFs layer on the surface of the lower electrode;

[0092] Then, the PDMS film prepared as above is covered on the surface of the Te NFs layer;

[0093] Take another 5cm piece 2 The copper electrode is used as the upper electrode to cover the surface of the PDMS layer to obtain a self-powered device.

[0094] 2. Preparation of Threshold Memristor

[0095] (1) Preparation of Te nanosheets

[0096] 0.05 g of sodium tellurite (Na2TeO3) and 0.4 g of polyvinyl pyrrolidone (PVP) were dissolved in 16 mL of deionized water to form a uniform solution under magnetic stirring, and then 4 mL of ammonia water (NH3·H2O) and 1 mL of hydrazine hydrate (N2H4·H2O) were added and stirred to obtain a mixed solution. The mixed solution was then poured into a 50 mL Teflon-lined stainless steel high-pressure reactor and sealed. The reactor was kept at a high temperature of 240°C for 36 hours, and then the reactor was naturally cooled to room temperature, and then centrifuged three times at 10,000 rpm, washed with isopropanol or distilled water, and dried to obtain Te nanosheets.

[0097] (2) Cleaning of SiO2 substrate

[0098] ① Immerse the SiO2 substrate in trichloroethylene, ultrasonically clean it, and blow it dry with nitrogen; ② Immerse the SiO2 substrate in acetone, ultrasonically clean it, and blow it dry with nitrogen; ③ Immerse the SiO2 substrate in ethanol, ultrasonically clean it, and blow it dry with nitrogen; ④ Immerse the SiO2 substrate in secondary deionized water, ultrasonically clean it, and blow it dry with nitrogen. The ultrasonic power is 80W, the ultrasonic time is 10 minutes for each step, and the nitrogen purge is 5 seconds.

[0099] (3) Photolithography of lower electrode

[0100] ① Place the cleaned SiO2 substrate on a hot plate and bake it at 80°C for 3 minutes; ② Spin-coat photoresist on the dried SiO2 substrate, and then pre-bake the photoresist to make it dry, the pre-bake temperature is 120°C, and the time is 90 seconds; ③ Use a UV maskless direct write lithography machine (model: MLA100) for patterning pretreatment, and the pattern is a single electrode; ④ Soak in developer and develop to obtain a photoresist patterned channel, the development time is 1 minute, and then rinse with isopropanol for 30 seconds, and blow dry with nitrogen for 5 seconds; Use a vacuum coating machine to thermally evaporate and deposit a gold electrode; ⑤ Use acetone soaking and ultrasonic treatment to remove the photoresist, and then rinse with isopropanol for 30 seconds, and blow dry with nitrogen for 5 seconds to obtain the lower electrode (Au electrode).

[0101] (4) The prepared Te nanosheets were transferred to the center area of ​​the lower electrode on the transfer platform by using a thermal release tape (temperature 100 °C, 10 min);

[0102] (5) Then, the upper electrode (Au electrode) was transferred to the upper layer of the Te nanosheet on the transfer platform by means of a thermal release tape (temperature 100 °C, 10 min);

[0103] (6) Use nitrogen gas to purge for 5 seconds to remove surface dust and obtain a threshold memristor.

[0104] The prepared self-powered device and threshold memristor are connected in series to obtain an all-tellurium-based self-powered artificial pain receptor.

[0105] The time-voltage curve of the self-powered device prepared in Example 1 of the present invention is shown in FIG. Figure 4 , the current-voltage characteristic curve of the threshold memristor is shown in Figure 5 The current characteristic curve of the threshold memristor detection in the all-tellurium-based self-powered artificial pain receptor obtained by connecting the self-powered device and the threshold memristor in series is shown in Figure 6 ,Depend on Figure 4-Figure 6 It can be seen that the self-powered device prepared in Example 1 of the present invention has a voltage input to the threshold device, and the threshold device has a current response, which proves that the system uses a self-powered sensor to replace the traditional pressure sensor, does not require an external power supply, and reduces the power consumption of the system.

[0106] The above are only preferred specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. An all-tellurium-based self-powered artificial pain receptor, characterized in that: including a self-powered device and a threshold memristor connected in series; The self-powered device comprises an upper electrode, an insulating layer, a piezoelectric layer and a lower electrode arranged in sequence from top to bottom, wherein the piezoelectric layer is a two-dimensional tellurium nanosheet layer synthesized by low-temperature hydrothermal synthesis; The threshold memristor comprises an upper electrode, a semiconductor functional layer and a lower electrode which are arranged in sequence from top to bottom, and the semiconductor functional layer is a two-dimensional tellurium nanosheet layer synthesized by high-temperature hydrothermal synthesis.

2. The all-tellurium-based self-powered artificial pain receptor according to claim 1, characterized in that: In the self-powered device, the upper electrode and the lower electrode are both copper electrodes, and the insulating layer is a polydimethylsiloxane layer.

3. The all-tellurium-based self-powered artificial pain receptor according to claim 1, characterized in that: In the threshold memristor, the upper electrode and the lower electrode are both gold electrodes.

4. The all-tellurium-based self-powered artificial pain receptor according to claim 1, characterized in that: The threshold memristor further includes a substrate, and the lower electrode is etched on the substrate.

5. A method for preparing the all-tellurium-based self-powered artificial pain receptor according to any one of claims 1 to 4, characterized in that: The following steps are involved: (1) drop-coating a tellurium nanosheet solution on a copper electrode sheet, drying the solution to obtain a piezoelectric layer and a lower electrode, placing a polydimethylsiloxane film on the upper layer of the piezoelectric layer, and covering the copper electrode sheet on the polydimethylsiloxane film to obtain a self-powered device; (2) using a substrate as a substrate, photolithographically etching a gold electrode on the substrate, then transferring a tellurium nanosheet to the center area of ​​the lower electrode, and transferring the upper electrode to the top of the tellurium nanosheet layer, thereby obtaining a threshold memristor; (3) After the self-powered device and the threshold memristor are connected in series, the all-tellurium-based self-powered artificial pain receptor is obtained.

6. The method for preparing the all-tellurium-based self-powered artificial pain receptor according to claim 5, characterized in that: The tellurium nanosheet solution in step (1) is prepared by a low-temperature hydrothermal method, which specifically includes the following steps: Dissolving ammonia water and ethylenediaminetetraacetic acid disodium salt in water to obtain a mixed solution A; Dissolve sodium hydroxide, tellurium oxide and hexadecyltrimethylammonium bromide in water to obtain a mixed solution B; After the A mixed solution and the B mixed solution are evenly mixed, the pH value of the solution is adjusted to be alkaline, and hydrazine hydrate is added to react in a sealed manner to obtain tellurium nanosheets, which are then dissolved in water to obtain the tellurium nanosheet solution.

7. The method for preparing the all-tellurium-based self-powered artificial pain receptor according to claim 6, characterized in that: The volume ratio of the A mixed solution to the B mixed solution is 5:4, and the amount ratio of ammonia water, disodium ethylenediaminetetraacetic acid and water in the A mixed solution is 2mL:0.15g:25mL; The amount ratio of sodium hydroxide, tellurium oxide, hexadecyltrimethylammonium bromide and water in the mixed solution B is 0.08 g: 0.08 g: 0.4 g: 20 mL; The sealing reaction was carried out at a temperature of 50° C. for 5 hours.

8. The method for preparing the all-tellurium-based self-powered artificial pain receptor according to claim 5, characterized in that: The tellurium nanosheets described in step (2) are prepared by a high-temperature hydrothermal method, which specifically includes the following steps: Sodium tellurite and polyvinyl pyrrolidone are dissolved in water, and ammonia water and hydrazine hydrate are added and stirred evenly to obtain a mixed solution, and then sealed for reaction to obtain the tellurium nanosheets.

9. The method for preparing the all-tellurium-based self-powered artificial pain receptor according to claim 8, characterized in that: The dosage ratio of sodium tellurite, polyvinyl pyrrolidone, water, ammonia water and hydrazine hydrate in the mixed solution is 0.05 g: 4 g: 16 mL: 4 mL: 1 mL; The sealing reaction was carried out at a temperature of 240° C. and for 36 hours.

10. The method for preparing the all-tellurium-based self-powered artificial pain receptor according to claim 5, characterized in that: In step (1), the concentration of the tellurium nanosheet solution is 0.01 g / mL, and the amount of the tellurium nanosheet solution applied to the electrode is 2 mL / 25 cm 2 .

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