Phase shifter and antenna

Abstract

The invention provides a phase shifter and an antenna. The phase shifter comprises a first substrate, a second substrate and a dielectric layer, wherein the first substrate and the second substrate are oppositely arranged; the dielectric layer is located between the first substrate and the second substrate; the first substrate comprises a first substrate, a first flexible base material located on the side, close to the dielectric layer, of the first substrate, and a first electrode layer located on the side, close to the dielectric layer, of the first flexible base material. The second substrate comprises a second substrate, a second flexible base material located on the side, close to the dielectric layer, of the second substrate, and a second electrode layer located on the side, close to the dielectric layer, of the second flexible base material; the dielectric constant of the first substrate and the dielectric constant of the second substrate are both smaller than or equal to 1.5.

Description

Phase shifter and antenna Technical Field

[0001] The present disclosure relates to the field of communication technology, and in particular to a phase shifter and an antenna. Background Art

[0002] Phase shifters are devices that adjust the phase of microwave signals and are widely used in electronic communication systems. They are core components in phased array radars, synthetic aperture radars, radar electronic countermeasures, satellite communications, and transmitters and receivers. Therefore, high-performance phase shifters play a vital role in these systems.

[0003] Summary of the Invention

[0004] The present disclosure provides a phase shifter and an antenna, the specific solutions of which are as follows:

[0005] The present disclosure provides a phase shifter comprising: a first substrate and a second substrate arranged opposite to each other, and a dielectric layer located between the first substrate and the second substrate; wherein,

[0006] The first substrate comprises: a first base, a first flexible base material located on a side of the first base close to the dielectric layer, and a first electrode layer located on a side of the first flexible base material close to the dielectric layer;

[0007] The second substrate comprises: a second base, a second flexible base material located on a side of the second base close to the dielectric layer, and a second electrode layer located on a side of the second flexible base material close to the dielectric layer;

[0008] The dielectric constant of the first substrate and the dielectric constant of the second substrate are both less than or equal to 1.5.

[0009] In a possible implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, the first substrate further includes a first voltage line located between the first flexible substrate and the first electrode layer, and the second substrate further includes a second voltage line located between the second flexible substrate and the second electrode layer; wherein,

[0010] The first voltage line is electrically connected to the first electrode layer, and the second voltage line is electrically connected to the second electrode layer.

[0011] In a possible implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, the material of the first voltage line and the material of the second voltage line are both transparent conductive materials, the first voltage line and the first electrode layer are in direct contact and electrical connection, and the second voltage line and the second electrode layer are in direct contact and electrical connection.

[0012] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the first voltage line and the first electrode layer are electrically connected at their edges, and an overlap width of an orthographic projection of the first voltage line on the first substrate and an orthographic projection of the first electrode layer on the first substrate is greater than 1 μm;

[0013] The second voltage line and the second electrode layer are electrically connected at their edges, and an overlapping width of an orthographic projection of the second voltage line on the second substrate and an orthographic projection of the second electrode layer on the second substrate is greater than 1 μm.

[0014] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the material of the first voltage line and the material of the second voltage line are metal;

[0015] The first substrate further includes a first insulating layer located between the first voltage line and the first electrode layer, and the second substrate further includes a second insulating layer located between the second voltage line and the second electrode layer; wherein,

[0016] The first voltage line is electrically connected to the first electrode layer through a first via hole penetrating the first insulating layer, and the second voltage line is electrically connected to the second electrode layer through a second via hole penetrating the second insulating layer.

[0017] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the shape of the first via hole and the shape of the second via hole are ring-shaped.

[0018] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the first electrode layer is a ground electrode provided on the entire surface, and the second electrode layer includes a microstrip line.

[0019] In a possible implementation, in the phase shifter provided in the embodiment of the present disclosure, the microstrip line has a grid structure.

[0020] In a possible implementation, in the phase shifter provided in the embodiment of the present disclosure, the spacing between grid lines of the grid structure is less than or equal to 100 μm, and the width of the grid lines is 1 μm to 20 μm.

[0021] In a possible implementation, the above-mentioned phase shifter provided in an embodiment of the present disclosure further includes a first transparent conductive layer arranged on the side of the second electrode layer facing or facing away from the first electrode layer and in contact with the second electrode layer, and the orthographic projection of the first transparent conductive layer on the second substrate covers the orthographic projection of the microstrip line on the second substrate.

[0022] In one possible implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, the first electrode layer includes a first ground electrode, a first signal electrode, and a second ground electrode extending along the first direction and arranged in sequence along the second direction; the second electrode layer includes a plurality of second signal electrodes extending along the second direction and arranged in sequence along the first direction; each of the second signal electrodes at least partially overlaps with an orthographic projection of the first ground electrode on the first substrate, and each of the second signal electrodes at least partially overlaps with an orthographic projection of the second ground electrode on the first substrate.

[0023] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the first ground electrode, the first signal electrode, the second ground electrode, and the second signal electrode all include a grid structure.

[0024] In a possible implementation, in the phase shifter provided in the embodiment of the present disclosure, the mesh sizes of the grid structures are the same, and the widths of the grid lines of the grid structures are the same.

[0025] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, a mesh density of the second signal electrode and the first signal electrode in an overlapping region is greater than or equal to a mesh density in other regions.

[0026] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the spacing between grid lines of the second signal electrode and the first signal electrode in the overlapping area is less than 20 μm.

[0027] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the orthographic projections of the second signal electrode and the first signal electrode on the first substrate have an overlapping area;

[0028] The phase shifter further includes: a second transparent conductive layer disposed on a side of the first signal electrode facing toward or facing away from the second electrode layer and in contact with the first signal electrode, wherein an orthographic projection of the second transparent conductive layer on the first substrate covers an orthographic projection of the overlapping region on the first substrate;

[0029] The phase shifter further includes: a third transparent conductive layer disposed on a side of the second signal electrode facing toward or facing away from the first electrode layer and in contact with the second signal electrode, wherein the orthographic projection of the third transparent conductive layer on the first substrate covers the orthographic projection of the overlapping region on the first substrate.

[0030] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the second signal electrode and the first signal electrode have a non-hollow structure in the overlapping region.

[0031] In one possible implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, the first electrode layer includes a first differential transmission line and a second differential transmission line extending along a first direction and spaced apart in sequence along a second direction; the second electrode layer includes a plurality of signal electrodes extending along the second direction and spaced apart in sequence along the first direction, each of the signal electrodes at least partially overlapping with an orthographic projection of the first differential transmission line on the first substrate, and each of the signal electrodes at least partially overlapping with an orthographic projection of the second differential transmission line on the first substrate.

[0032] In one possible implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, the first differential transmission line includes a first main body structure and a plurality of first branches connected to a side of the first main body structure facing the second differential transmission line and spaced apart; the second differential transmission line includes a second main body structure and a plurality of second branches connected to a side of the second main body structure facing the first differential transmission line and spaced apart; the first branches and the second branches correspond one-to-one, and the orthographic projection of each of the signal electrodes on the first substrate covers at least the orthographic projections of a pair of the first and second branches on the first substrate.

[0033] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, at least one of the first differential transmission line, the second differential transmission line, and the signal electrode includes a grid structure.

[0034] In a possible implementation, in the above-mentioned phase shifter provided by an embodiment of the present disclosure, both the first substrate and the second substrate have at least one hollow structure;

[0035] Alternatively, the first substrate and the second substrate both have a plurality of hollow structures, and the plurality of hollow structures are evenly arranged.

[0036] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the material of the first substrate and the material of the second substrate include polymethacrylimide.

[0037] In a possible implementation, in the phase shifter provided in the embodiment of the present disclosure, the thickness of the first substrate and the thickness of the second substrate are both 0.5 mm to 3 mm.

[0038] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the material of the first flexible substrate and the material of the second flexible substrate include polyimide, cycloolefin polymer, or polyethylene terephthalate.

[0039] In a possible implementation, in the phase shifter provided in an embodiment of the present disclosure, the thickness of the first flexible substrate and the thickness of the second flexible substrate are both 1 μm to 20 μm.

[0040] Correspondingly, an embodiment of the present disclosure further provides an antenna, comprising the above-mentioned phase shifter provided by an embodiment of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] FIG1 is a schematic structural diagram of a phase shifter provided by an embodiment of the present disclosure;

[0042] FIG2 is a schematic structural diagram of another phase shifter provided by an embodiment of the present disclosure;

[0043] FIG3 is a schematic structural diagram of another phase shifter provided by an embodiment of the present disclosure;

[0044] FIG4 is a plan view of the area where the first via hole is located in FIG3 ;

[0045] 5A-5J are schematic structural diagrams corresponding to a phase shifter in a manufacturing process according to an embodiment of the present disclosure;

[0046] 6A-6D are schematic structural diagrams corresponding to a phase shifter in a manufacturing process according to an embodiment of the present disclosure;

[0047] FIG7 is a schematic diagram of the structure of a microstrip line;

[0048] FIG8 is a schematic diagram of the structure of another microstrip line;

[0049] FIG9 is a schematic structural diagram of a first transparent conductive layer provided on a microstrip line;

[0050] FIG10 is a plan view schematically showing the first electrode layer and the second electrode layer in FIG2 and FIG3;

[0051] FIG11 is another schematic plan view of the first electrode layer and the second electrode layer in FIG2 and FIG3;

[0052] FIG12 is an enlarged schematic diagram within the dotted box in FIG11 ;

[0053] FIG13 is another schematic plan view of the first electrode layer and the second electrode layer in FIG2 and FIG3;

[0054] FIG14 is an enlarged schematic diagram within the dotted box in FIG13 ;

[0055] FIG15 is another schematic plan view of the first electrode layer and the second electrode layer in FIG2 and FIG3;

[0056] FIG16 is another schematic plan view of the first electrode layer and the second electrode layer in FIG2 and FIG3;

[0057] FIG17 is another schematic plan view of the first electrode layer and the second electrode layer in FIG2 and FIG3;

[0058] FIG18 is another schematic plan view of the first electrode layer and the second electrode layer in FIG2 and FIG3;

[0059] FIG19 is a schematic structural diagram of another phase shifter provided in an embodiment of the present disclosure;

[0060] FIG20 is a planar schematic diagram illustrating the hollow structure on the first substrate, taking the first substrate as an example. DETAILED DESCRIPTION

[0061] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. And in the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0062] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the usual meanings understood by persons of ordinary skill in the field to which this disclosure belongs. The words “include” or “comprise” and the like used in this disclosure mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. The words “connect” or “connected” and the like are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Inside”, “outside”, “upper”, “lower”, etc. are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0063] It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual scale and are only for the purpose of illustrating the present disclosure. The same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions.

[0064] The present disclosure provides a phase shifter, as shown in FIG1 , comprising: a first substrate 1 and a second substrate 2 arranged opposite to each other, and a dielectric layer 3 located between the first substrate 1 and the second substrate 2; wherein,

[0065] The first substrate 1 includes: a first base 11, a first flexible base material 12 located on a side of the first base 11 close to the dielectric layer 3, and a first electrode layer 13 located on a side of the first flexible base material 12 close to the dielectric layer 3;

[0066] The second substrate 2 includes: a second base 21, a second flexible base material 22 located on a side of the second base 21 close to the dielectric layer 3, and a second electrode layer 23 located on a side of the second flexible base material 22 close to the dielectric layer 3;

[0067] The dielectric constant of the first substrate 11 and the dielectric constant of the second substrate 21 are both less than or equal to 1.5.

[0068] The above-mentioned phase shifter provided by the embodiment of the present disclosure, since both the first substrate and the second substrate use a low dielectric constant layer and a flexible layer, on the one hand, since the dielectric constant of the low dielectric constant material is usually close to that of air, for microwave signals, the equivalent dielectric constant depends largely on the dielectric layer, which greatly improves the tuning efficiency of the phase shifter; on the other hand, the loss of the low dielectric constant layer is much smaller than that of glass, PCB and other plates, and the dielectric loss during transmission is extremely low. Therefore, the tuning efficiency of the phase shifter provided by the present disclosure will be greatly improved and the loss will be greatly reduced. By using a low-loss phase shifter, the use of waveguide-type structures can be avoided, the weight and longitudinal dimensions of the antenna array can be greatly reduced, and an extremely low-profile phase shifter can be realized.

[0069] As shown in Figure 1, the dielectric constant of the dielectric layer 3 can change based on changes in the electric field between the first electrode layer 13 and the second electrode layer 23. Specifically, the dielectric layer 3 can be a liquid crystal layer 3. Liquid crystal, as an anisotropic material, has different dielectric constants along its major axis and minor axis. When a bias voltage is applied across the liquid crystal, the liquid crystal deflects, so that in a certain direction, the dielectric constant of the liquid crystal material changes with changes in the bias voltage. Of course, the dielectric layer 3 of the present disclosure can also be other materials similar to liquid crystals that can change their dielectric constant based on changes in the electric field. The present disclosure uses the liquid crystal layer 3 as an example for explanation.

[0070] Specifically, as shown in FIG1 , after a voltage is applied to the first electrode layer 13 and the second electrode layer 23 , an electric field is formed between the two to deflect the liquid crystal molecules in the liquid crystal layer 3, thereby changing the dielectric constant of the liquid crystal layer 3 and changing the phase of the microwave signal transmitted to the liquid crystal layer 3 to achieve the purpose of phase shifting.

[0071] In a specific implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, as shown in FIG1 , the material of the first substrate 11 and the material of the second substrate 21 may include, but are not limited to, polymethacrylimide (PMI). Optionally, the thickness of the first substrate 11 and the thickness of the second substrate 21 may both be 0.5 mm to 3 mm.

[0072] In a specific implementation, in the phase shifter provided in the embodiment of the present disclosure, as shown in FIG1 , the material of the first flexible substrate 12 and the second flexible substrate 22 may include, but are not limited to, polyimide (PI), cycloolefin polymer (COP), or polyethylene terephthalate (PET). Optionally, the thickness of the first flexible substrate 12 and the thickness of the second flexible substrate 22 may both be 1 μm to 20 μm.

[0073] In a specific implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, as shown in FIG2 and FIG3 , the first substrate 1 further includes a first voltage line 14 located between the first flexible substrate 12 and the first electrode layer 13 , and the second substrate 2 further includes a second voltage line 24 located between the second flexible substrate 22 and the second electrode layer 23 ; wherein,

[0074] The first voltage line 14 is electrically connected to the first electrode layer 13, and the second voltage line 24 is electrically connected to the second electrode layer 23. In this way, a voltage is applied to the first electrode layer 13 via the first voltage line 14, and a voltage is applied to the second electrode layer 23 via the second voltage line 24, so as to form a voltage difference between the first electrode layer 13 and the second electrode layer 23, thereby driving the liquid crystal molecules in the liquid crystal layer 3 to deflect, changing the dielectric constant of the liquid crystal layer 3, and thus changing the phase of the microwave signal transmitted to the liquid crystal layer 3.

[0075] In a specific implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, as shown in FIG2 , the material of the first voltage line 14 and the material of the second voltage line 24 can both be transparent conductive materials. The first voltage line 14 is directly electrically connected to the first electrode layer 13, and the second voltage line 24 is directly electrically connected to the second electrode layer 23. Optionally, the material of the first voltage line 14 and the second voltage line 24 can be, but is not limited to, indium tin oxide (ITO). Because the electrical conductivity of ITO is two orders of magnitude lower than that of metal materials, microwave signal leakage can be prevented by properly designing the ITO line width, typically 5μm to 50μm.

[0076] In a specific implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, as shown in FIG2 , the first voltage line 14 and the first electrode layer 13 may be electrically connected at their edges. To ensure that a voltage can be applied to the first electrode layer 13 , an overlapping width D1 between an orthographic projection of the first voltage line 14 on the first substrate 11 and an orthographic projection of the first electrode layer 13 on the first substrate 11 is greater than 1 μm.

[0077] The second voltage line 24 and the second electrode layer 23 can be electrically connected at their edges. To ensure that voltage can be applied to the second electrode layer 23, the overlapping width D2 of the orthographic projection of the second voltage line 24 on the second substrate 21 and the orthographic projection of the second electrode layer 23 on the second substrate 21 is greater than 1 μm.

[0078] In a specific implementation, in the above-mentioned phase shifter provided in an embodiment of the present disclosure, as shown in FIG3 , the material of the first voltage line 14 and the material of the second voltage line 24 can be metal; since metal has high electrical conductivity, the voltage loss on the first voltage line 14 and the second voltage line 24 can be reduced;

[0079] However, since metals with high electrical conductivity are very likely to cause leakage of microwave signals, resulting in additional transmission losses, the present disclosure may adopt an interlayer transmission method. For example, the first substrate 1 further includes a first insulating layer 15 located between the first voltage line 14 and the first electrode layer 13, and the second substrate 2 further includes a second insulating layer 25 located between the second voltage line 24 and the second electrode layer 23; wherein,

[0080] The first voltage line 14 is electrically connected to the first electrode layer 13 via a first via V1 extending through the first insulating layer 15. The second voltage line 24 is electrically connected to the second electrode layer 23 via a second via V2 extending through the second insulating layer 25. Specifically, the thickness of the first insulating layer 15 and the second insulating layer 25 should not affect device performance, but should be no less than 20 nm to prevent them from failing to provide insulation. Preferably, the thickness of the first insulating layer 15 and the second insulating layer 25 is between 50 nm and 200 nm. Holes are formed in the first and second insulating layers 15 and 25 through patterning and etching. The shapes of the first and second vias V1 and V2 can be circular, rectangular, or other shapes, without affecting device performance. Metallization is then achieved by depositing a metal layer, enabling voltage to be applied to the first and second electrode layers 13 and 23. The preferred dimensions of the first and second vias V1 and V2 are between 10 μm and 100 μm to ensure that microwave signals do not leak to the first and second voltage lines 14 and 24.

[0081] In specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in FIG3 , since the first voltage line 14 and the second voltage line 24 are made of metal material using a semiconductor thin film process, a full-surface metal layer is prepared and then etched. Therefore, the metal layer is likely to completely fill the vias (V1 and V2) of the insulating layer, thereby sharply reducing the resistance of the first voltage line 14 and the second voltage line 24. Therefore, the preferred embodiment of the present disclosure is that the shape of the first via V1 and the shape of the second via V2 are annular, and the width of the annular ring can be 10μm to 100μm. Annular vias of this size can greatly increase the impedance of the first voltage line 14 and the second voltage line 24 compared to circular vias or rectangular vias, thereby ensuring that microwave signals do not leak to the first voltage line 14 and the second voltage line 24. As shown in FIG4 , FIG4 is a plan view of the area where the first via V1 in FIG3 is located.

[0082] In specific implementations, the phase shifter provided in the embodiments of the present disclosure, as shown in Figures 2 and 3, further includes: a first alignment layer 4 located on the side of the first substrate 1 facing the second substrate 2; a second alignment layer 5 located on the side of the second substrate 2 facing the first substrate 1; and a spacer layer 6 located between the first and second alignment layers 4 and 5. Specifically, the first and second alignment layers 4 and 5 are used to align the liquid crystal molecules in the liquid crystal layer 3 in their initial state, and the spacer layer 6 is used to support the cell thickness of the phase shifter. The materials used for these layers are the same as those in the prior art and are not described in detail in this disclosure.

[0083] In specific implementation, the phase shifter provided by the embodiment of the present disclosure can be prepared by a semiconductor display process. Taking the phase shifter shown in FIG3 as an example, the manufacturing process of the phase shifter is shown in FIG5A to FIG5J. Specifically, as shown in FIG5A, a glass substrate 10 is provided; as shown in FIG5B, a first flexible substrate 12 is formed on the glass substrate 10; as shown in FIG5C, a first voltage line 14 is formed on the first flexible substrate 12; as shown in FIG5D, a first electrode layer 13 and a first alignment layer (not shown) are formed on the first voltage line 14; as shown in FIG5E, a spacer layer 6 is formed on the first alignment layer; as shown in FIG5F, a liquid crystal injection process (ODF or VIF) is used to inject liquid crystal into the structure of FIG5E; and a second flexible substrate 22 is sequentially formed on another glass substrate 20 in the same manner. , a second voltage line 24, a second electrode layer 23, a second alignment layer (not shown) and injected liquid crystal, as shown in FIG5G ; as shown in FIG5H , the structure shown in FIG5F and the structure shown in FIG5G are aligned and bonded to form a liquid crystal box; as shown in FIG5I , the glass substrate 10 is separated from the first flexible substrate 12 and the glass substrate 20 is separated from the second flexible substrate 22 by peeling (e.g., LLO peeling); as shown in FIG5J , the first substrate 11 with a low dielectric constant is bonded to the first flexible substrate 12, and the second substrate 21 with a low dielectric constant is bonded to the second flexible substrate 22.

[0084] Optionally, the first electrode layer 13 and the second electrode layer 23 may be made of low-resistance, low-loss metal materials such as copper, gold, and silver, and may be prepared by magnetron sputtering, thermal evaporation, electroplating, and the like.

[0085] Optionally, the glass substrate (10 and 20) can be a commonly used PCB insulation material such as polytetrafluoroethylene glass fiber laminate, phenolic paper laminate, phenolic glass cloth laminate, or a hard material with low microwave signal loss such as quartz and glass, with a thickness of 100μm to 10mm.

[0086] Optionally, the cell thickness of the liquid crystal phase shifter may be 3 μm to 250 μm (the thickness between the first alignment layer and the second alignment layer).

[0087] Optionally, the embodiment of the present disclosure takes the example of applying voltage directly to the electrode layer through a voltage line. Of course, a thin film transistor (TFT) can also be used to apply voltage to the electrode layer. In this way, the TFT is first prepared on the flexible substrate through a multi-layer film process, and then the patterned electrode layer is directly deposited. The bias line only needs to be electrically connected to the TFT.

[0088] Optionally, the low dielectric constant substrate and the flexible substrate can be bonded together using optical adhesive (OCA) or other types of adhesive as an adhesive, and the preparation can be completed by a soft-to-hard method. In order to maximize the product yield, after preparing the liquid crystal box shown in Figure 5H, the glass substrate 20 on one side can be peeled off first, as shown in Figure 6A; as shown in Figure 6B, the second substrate 21 with a low dielectric constant is bonded to the second flexible substrate 22; as shown in Figure 6C, the glass substrate 10 on the other side is peeled off; as shown in Figure 6D, the first substrate 11 with a low dielectric constant is bonded to the first flexible substrate 12. That is, the process flow shown in Figures 5A-5H and 6A-6D can also be used to prepare the liquid crystal phase shifter. This process flow ensures that the liquid crystal box is always in an environment with a rigid substrate throughout the process, that is, a hard-to-hard method, which improves the product yield.

[0089] In a specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in Figures 2 and 3, the first electrode layer 13 can be a ground electrode provided on the entire surface, and the second electrode layer 23 can include a microstrip line 231 as shown in Figure 7. The microstrip line 231 and the ground electrode thus form a microwave signal transmission structure, which can transmit (receive and send) microwave signals and can apply a driving voltage via the second voltage line 24. The first voltage line 14 is equivalent to a common voltage line for receiving a common voltage. The phase shifter provided in the embodiment of the present disclosure can be provided with multiple microstrip lines 231.

[0090] It should be noted that the present disclosure is not limited to the microstrip line of the shape shown in FIG. 7 , but may adopt a microstrip line of any shape, for example, a spiral microstrip line.

[0091] In practice, to expand the applicable scenarios of liquid crystal phase shifters and liquid crystal phased arrays, for example, to achieve aesthetic applications while providing beam scanning capabilities without compromising aesthetics, such as installation on car sunroofs or building glass for dynamic connection to 5G base station signals, the phase shifters require transparency. Therefore, in the phase shifters provided in the embodiments of the present disclosure, as shown in FIG8 , the microstrip line 231 has a grid-like structure. This allows for transparency in the liquid crystal phase shifter, enabling its application in a wider range of scenarios.

[0092] In a specific implementation, for a microstrip line-based phase shifter structure, since the liquid crystal phase shifter is driven by applying a voltage to the first electrode layer and the second electrode layer, taking into account the edge effect of the DC electric field, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in FIG8 , the spacing between the grid lines of the grid structure is less than or equal to 100 μm, thereby ensuring that the liquid crystals below the grid lines can be deflected under voltage drive.

[0093] Specifically, the present disclosure does not limit the grid shape of the grid structure, which may be square, rectangular, hexagonal, diamond, etc. The thinner the grid line width of the grid structure, the better. Preferably, the grid line width is 1 μm to 20 μm.

[0094] In a specific implementation, in order to adjust the capacitance value of the overlap between the microstrip line 231 and the ground electrode or the deflection of the liquid crystal as much as possible, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in Figures 2 and 3, when the first electrode layer 13 is a ground electrode provided on the entire surface, and the second electrode layer 23 includes the microstrip line 231 shown in Figure 7, as shown in Figure 9, Figure 9 only illustrates a planar schematic diagram of the microstrip line 231. The phase shifter may further include a first transparent conductive layer 7 provided on the side of the second electrode layer 23 facing or facing away from the first electrode layer 13 and in contact with the second electrode layer 23. The orthographic projection of the first transparent conductive layer 7 on the second substrate 21 covers the orthographic projection of the microstrip line 231 on the second substrate 21. In this way, covering the surface of the microstrip line with a first transparent conductive layer 7 does not affect the transmittance of the phase shifter on the one hand, and can increase the overlapping area between the microstrip line 231 and the ground electrode on the other hand. Therefore, covering the surface of the microstrip line with a grid structure that needs to be adjusted with a first transparent conductive layer 7 that does not affect the transmittance, such as ITO, boron-doped zinc oxide (BZO), aluminum-doped zinc oxide (AZO), etc., can ensure that the overlapping capacitance corresponding to the liquid crystal layer 3 is fully regulated.

[0095] In a specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in FIG2 , FIG3 , and FIG7 - FIG9 , the liquid crystal phase shifter adopts a microstrip line structure, and the thickness of the liquid crystal cell thereof is preferably in the range of 40 μm to 250 μm.

[0096] In a specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in Figures 2, 3 and 10, Figure 10 is a plan schematic diagram of the first electrode layer 13 and the second electrode layer 23 in Figures 2 and 3. The first electrode layer 13 includes a first ground electrode 131, a first signal electrode 132, and a second ground electrode 133 extending along the first direction X and sequentially spaced along the second direction Y. The second electrode layer 23 includes a plurality of second signal electrodes 232 extending along the second direction Y and sequentially spaced along the first direction X. Each second signal electrode 232 at least partially overlaps with an orthographic projection of the first ground electrode 131 on the first substrate 11, and each second signal electrode 232 at least partially overlaps with an orthographic projection of the second ground electrode 133 on the first substrate 11. Specifically, since the orthographic projections of the second signal electrode 232, the first ground electrode 131, and the second ground electrode 133 on the first substrate 11 at least partially overlap, the second signal electrode 232 overlaps to a certain extent with the first signal electrode 132 located between the first ground electrode 131 and the second ground electrode 133. Therefore, when a microwave signal is input to the first signal electrode 132, an electric field is formed by applying a certain voltage difference between the voltages of the first signal electrode 132 and the second signal electrode 232, thereby causing the liquid crystal molecules in the liquid crystal layer 3 to deflect, thereby changing the dielectric constant of the liquid crystal layer 3, and thereby changing the phase of the microwave signal transmitted in the liquid crystal layer 3.

[0097] In practice, to improve the transparency of the phase shifter, in the phase shifter provided in the embodiment of the present disclosure, as shown in FIG11 , the first ground electrode 131, the first signal electrode 132, the second ground electrode 133, and the second signal electrode 232 all comprise a grid-like structure. This allows for transparency of the liquid crystal phase shifter, enabling its application in a wider range of scenarios.

[0098] In a specific implementation, in the phase shifter provided by the embodiments of the present disclosure, as shown in Figures 11 and 12 (Figure 12 is an enlarged schematic diagram within the dashed box A in Figure 11), the mesh sizes of the grid structures are the same, and the grid lines of the grid structures are the same width. This can further improve the transparency of the phase shifter.

[0099] In specific implementations, in the phase shifter provided in the embodiments of the present disclosure, as shown in Figures 11 and 12 , the second signal electrode 232 is disposed in a one-to-one correspondence with the mesh openings of the first ground electrode 131 in the overlapping region, the second signal electrode 232 is disposed in a one-to-one correspondence with the mesh openings of the second ground electrode 133 in the overlapping region, and the second signal electrode 232 is disposed in a one-to-one correspondence with the mesh openings of the first signal electrode 132 in the overlapping region. This optimizes the transparency of the phase shifter.

[0100] In a specific implementation, in order to increase the phase shift amount of the phase shifter, that is, to ensure that the liquid crystal in the overlapping capacitor portion is fully driven as much as possible, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in Figures 13 and 14, Figure 14 is an enlarged schematic diagram within the dotted box B in Figure 13, and the mesh density of the second signal electrode 232 and the first signal electrode 132 in the overlapping area (dashed box B) is greater than or equal to the mesh density in other areas.

[0101] Specifically, as shown in Figures 13 and 14, in areas other than the overlapping area (dashed box B), in order to improve transparency as much as possible, the grids of the first ground electrode 131, the first signal electrode 132, the second ground electrode 133 and the second signal electrode 232 should overlap as much as possible to prevent the problem of reduced transmittance caused by misalignment.

[0102] In a specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in Figures 13 and 14, the spacing between the grid lines in the area other than the overlapping area (dashed box B) is less than or equal to 100 μm, and the spacing between the grid lines of the second signal electrode 232 and the first signal electrode 132 in the overlapping area (dashed box B) is less than 20 μm, thereby ensuring that the liquid crystal in the overlapping area is fully driven.

[0103] In a specific implementation, in the above-mentioned phase shifter provided by the embodiment of the present disclosure, as shown in FIG2 , FIG3 and FIG15 , FIG15 is another plan view schematically illustrating the first electrode layer 13 and the second electrode layer 23 in FIG2 and FIG3 , the orthographic projections of the second signal electrode 232 and the first signal electrode 132 on the first substrate 11 have an overlapping area B;

[0104] The phase shifter further includes: a second transparent conductive layer 8 disposed on a side of the first signal electrode 132 facing or facing away from the second electrode layer 23 and in contact with the first signal electrode 132 , wherein the orthographic projection of the second transparent conductive layer 8 on the first substrate 11 covers the orthographic projection of the overlapping area B on the first substrate 11 ;

[0105] The phase shifter also includes a third transparent conductive layer 9 disposed on the side of the second signal electrode 232 facing or facing away from the first electrode layer 13 and in contact with the second signal electrode 232. The orthographic projection of the third transparent conductive layer 9 on the first substrate 11 overlaps the orthographic projection of the overlapping region B on the first substrate 11. In this way, by disposing transparent conductive layers above or below the first signal electrode 132 and the second signal electrode 232 in the overlapping region B, the transmittance of the phase shifter is not affected, while the overlapping area of ​​the first signal electrode 132 and the second signal electrode 232 in the overlapping region B is increased. Therefore, by covering the surface of the signal electrodes in the grid structure that require adjustment with a transparent conductive layer that does not affect transmittance, such as ITO, boron-doped zinc oxide (BZO), aluminum-doped zinc oxide (AZO), etc., sufficient regulation of the overlap capacitance corresponding to the liquid crystal layer 3 can be ensured.

[0106] It should be noted that FIG15 takes the example of setting the second transparent conductive layer 8 and the third transparent conductive layer 9 in the overlapping area of ​​FIG11 as an example. Of course, the second transparent conductive layer 8 and the third transparent conductive layer 9 can also be set in the overlapping area of ​​FIG13.

[0107] In practice, to ensure that the phase shift of the phase shifter is as consistent as possible with that when the electrodes are not transparent, in the above-mentioned phase shifter provided in the embodiments of the present disclosure, as shown in Figures 2, 3, and 16 (Figure 16 is another schematic plan view of the first electrode layer 13 and the second electrode layer 23 in Figures 2 and 3), the second signal electrode 232 and the first signal electrode 132 have a non-hollow structure in the overlapping region B. This ensures that the magnitude of the overlap capacitance is consistent with that when the electrodes are not transparent, thereby improving the phase shift of the phase shifter.

[0108] It should be noted that FIG16 is an example of setting the second signal electrode 232 and the first signal electrode 132 in the overlapping area B as a non-hollow structure in FIG11. Of course, the second signal electrode 232 and the first signal electrode 132 in the overlapping area B may also be set as a non-hollow structure in FIG13.

[0109] In a specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in Figures 2, 3, 10, 11, 13, 15 and 16, the liquid crystal phase shifter adopts a coplanar waveguide transmission line structure, and the thickness of its liquid crystal box is preferably in the range of 3μm to 40μm.

[0110] In a specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in Figures 2, 3 and 17, Figure 17 is another planar schematic diagram of the first electrode layer 13 and the second electrode layer 23 in Figures 2 and 3. The first electrode layer 13 includes a first differential transmission line 134 and a second differential transmission line 135 extending along the first direction X and sequentially spaced along the second direction Y. The second electrode layer 23 includes a plurality of signal electrodes 233 extending along the second direction Y and sequentially spaced along the first direction X. Each signal electrode 233 at least partially overlaps with an orthographic projection of the first differential transmission line 134 on the first substrate 11, and each signal electrode 233 at least partially overlaps with an orthographic projection of the second differential transmission line 135 on the first substrate 11. Specifically, the first differential transmission line 134 includes a first main body structure 1341 and a plurality of first branches 1342 connected to the first main body structure 1341 and spaced apart on the side facing the second differential transmission line 135. The second differential transmission line 135 includes a second main body structure 1351 and a plurality of second branches 1352 connected to the second main body structure 1351 and spaced apart on the side facing the first differential transmission line 134. The first branches 1342 and the second branches 1352 correspond one to one, and the orthographic projection of each signal electrode 233 on the first substrate 11 covers the orthographic projection of a pair of first branches 1342 and the second branch 1352 on the first substrate 11. In this way, the first differential transmission line 134 and the second differential transmission line 135 can be connected and led out through the first ITO lead, and the multiple signal electrodes 233 can be connected and led out through the second ITO lead. By loading the voltage of the first ITO lead and the second ITO lead, there is a certain voltage difference to form an electric field, and the microwave signal is transmitted between the first differential transmission line 134 and the second differential transmission line 135, so that the liquid crystal molecules in the liquid crystal layer 3 are deflected to change the dielectric constant of the liquid crystal layer 3, thereby changing the phase of the microwave signal transmitted in the liquid crystal layer 3.

[0111] In a specific implementation, for example, to improve the transparency of a phase shifter employing the structure shown in FIG17 , in the aforementioned phase shifter provided in an embodiment of the present disclosure, as shown in FIG18 , at least one of the first differential transmission line 134, the second differential transmission line 135, and the signal electrode 233 comprises a grid-like structure. This disclosure uses the example of the first differential transmission line 134, the second differential transmission line 135, and the signal electrode 233 all comprising a grid-like structure. This can achieve transparency in the liquid crystal phase shifter, enabling its application in a wider range of scenarios.

[0112] In a specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in FIG18 , the mesh size of each grid structure is the same, and the width of the grid lines of each grid structure is the same, which can further improve the transparency of the phase shifter.

[0113] In a specific implementation, in the above-mentioned phase shifter provided in the embodiment of the present disclosure, as shown in FIG2 , FIG3 , FIG17 and FIG18 , the liquid crystal phase shifter adopts a differential transmission line structure, and the thickness of its liquid crystal cell is preferably in the range of 3 μm to 40 μm.

[0114] It should be noted that the present disclosure merely illustrates the specific structure of the first and second electrode layers in the above-mentioned phase shifter and is of course not limited thereto. However, the use of a low-dielectric-constant layer and a flexible layer for both the first and second substrates can greatly improve the tuning efficiency of the phase shifter, significantly reduce losses, and achieve an extremely low-profile phase shifter.

[0115] In a specific implementation, in the phase shifter provided in the embodiment of the present disclosure, as shown in FIG19 , the first substrate 11 and the second substrate 21 can each have at least one hollow structure LK. By hollowing out the low-k dielectric constant layer (the first substrate 11 and the second substrate 21) that serves as the substrate support, microwave signals are coupled entirely through air, further reducing dielectric loss and improving antenna radiation efficiency and bandwidth.

[0116] Specifically, the grid-structured electrode layer used in the phase shifter provided by the present disclosure can achieve transparency of the phase shifter. Since the first flexible substrate and the second flexible substrate can be made of materials such as PI, COP, and PET, which have high transparency, the first flexible substrate and the second flexible substrate have high transparency. The requirement for the first substrate and the second substrate is that their dielectric constants are as close to that of air as possible. Therefore, by using the grid-structured electrode layer, a certain degree of transparency can be achieved. The first substrate and the second substrate having a hollow structure are more conducive to reducing the equivalent dielectric constant, thereby achieving transparency of the phase shifter and improving phase shifter performance.

[0117] In a specific implementation, in the phase shifter provided in the embodiment of the present disclosure, as shown in FIG19 , both the first substrate 11 and the second substrate 21 have multiple hollow structures LK, which can be evenly arranged. FIG20 is a plan view schematically illustrating the hollow structures LK on the first substrate 11, taking the first substrate 11 as an example.

[0118] Optionally, the size of the hollow structure is comparable to that of the microwave signal coupling portion or is slightly larger. Of course, other portions that do not affect microwave signal transmission may also be hollowed out.

[0119] It should be noted that FIG19 takes the structure shown in FIG1 as an example in which a hollow structure LK is provided on the first substrate 11 and the second substrate 21. Of course, a hollow structure LK can also be provided on the first substrate 11 and the second substrate 21 in FIG2 and FIG3.

[0120] In specific implementation, the phase shifter provided by the present disclosure may further include other functional film layers well known to those skilled in the art, which are not listed here one by one.

[0121] Based on the same inventive concept, the present disclosure also provides an antenna including any of the above-mentioned phase shifters provided in the present disclosure. The implementation of the phase shifter can refer to the above-mentioned antenna embodiments, and the repeated parts will not be repeated.

[0122] It should be noted that the number of phase shifters included in the antenna is determined according to actual needs and is not specifically limited in the embodiments of the present disclosure.

[0123] The disclosed embodiments provide a phase shifter and antenna. Because both the first and second substrates utilize a low-dielectric constant layer and a flexible layer, the dielectric constant of low-dielectric constant materials is typically close to that of air. Therefore, for microwave signals, the equivalent dielectric constant depends largely on the dielectric layer, significantly improving the tuning efficiency of the phase shifter. Furthermore, the loss of the low-dielectric constant layer is much lower than that of materials such as glass and PCBs, resulting in extremely low dielectric loss during transmission. Therefore, the tuning efficiency of the phase shifter provided by the present disclosure is significantly improved, and the loss is significantly reduced. Using a low-loss phase shifter avoids the need for waveguide-type structures, significantly reducing the weight and longitudinal dimensions of the antenna array, and achieving an extremely low-profile phase shifter.

[0124] Although the preferred embodiments of the present disclosure have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present disclosure.

[0125] Obviously, those skilled in the art may make various changes and modifications to the embodiments of the present disclosure without departing from the spirit and scope of the embodiments of the present disclosure. Thus, if such changes and modifications of the embodiments of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is intended to include such changes and modifications.

Claims

1. A phase shifter, wherein: include: A first substrate and a second substrate are arranged opposite to each other, and a dielectric layer is located between the first substrate and the second substrate; wherein, The first substrate comprises: a first base, a first flexible base material located on a side of the first base close to the dielectric layer, and a first electrode layer located on a side of the first flexible base material close to the dielectric layer; The second substrate comprises: a second base, a second flexible base material located on a side of the second base close to the dielectric layer, and a second electrode layer located on a side of the second flexible base material close to the dielectric layer; The dielectric constant of the first substrate and the dielectric constant of the second substrate are both less than or equal to 1.

5.

2. The phase shifter according to claim 1, wherein: The first substrate further includes a first voltage line located between the first flexible substrate and the first electrode layer, and the second substrate further includes a second voltage line located between the second flexible substrate and the second electrode layer; wherein, The first voltage line is electrically connected to the first electrode layer, and the second voltage line is electrically connected to the second electrode layer.

3. The phase shifter according to claim 2, wherein: The material of the first voltage line and the material of the second voltage line are both transparent conductive materials. The first voltage line is in direct contact and electrically connected to the first electrode layer. The second voltage line is in direct contact and electrically connected to the second electrode layer.

4. The phase shifter according to claim 3, wherein: The first voltage line and the first electrode layer are electrically connected at their edges, and an overlap width of an orthographic projection of the first voltage line on the first substrate and an orthographic projection of the first electrode layer on the first substrate is greater than 1 μm; The second voltage line and the second electrode layer are electrically connected at their edges, and an overlapping width of an orthographic projection of the second voltage line on the second substrate and an orthographic projection of the second electrode layer on the second substrate is greater than 1 μm.

5. The phase shifter according to claim 2, wherein: The material of the first voltage line and the material of the second voltage line are metal; The first substrate further includes a first insulating layer located between the first voltage line and the first electrode layer, and the second substrate further includes a second insulating layer located between the second voltage line and the second electrode layer; wherein, The first voltage line is electrically connected to the first electrode layer through a first via hole penetrating the first insulating layer, and the second voltage line is electrically connected to the second electrode layer through a second via hole penetrating the second insulating layer.

6. The phase shifter according to claim 5, wherein: The first via hole and the second via hole are in a ring shape.

7. The phase shifter according to any one of claims 1 to 6, wherein: The first electrode layer is a ground electrode disposed on the entire surface, and the second electrode layer includes a microstrip line.

8. The phase shifter according to claim 7, wherein: The microstrip line has a grid structure.

9. The phase shifter according to claim 8, wherein: The spacing between grid lines of the grid structure is less than or equal to 100 μm, and the width of the grid lines is 1 μm to 20 μm.

10. The phase shifter according to claim 8 or 9, wherein: It also includes a first transparent conductive layer arranged on the side of the second electrode layer facing or facing away from the first electrode layer and in contact with the second electrode layer, and the orthographic projection of the first transparent conductive layer on the second substrate covers the orthographic projection of the microstrip line on the second substrate.

11. The phase shifter according to any one of claims 1 to 6, wherein: The first electrode layer includes a first ground electrode, a first signal electrode, and a second ground electrode extending along the first direction and arranged in sequence along the second direction. The second electrode layer includes a plurality of second signal electrodes extending along the second direction and arranged in sequence along the first direction. The orthographic projection of each of the second signal electrodes at least partially overlaps with the orthographic projection of the first ground electrode on the first substrate. The orthographic projection of each of the second signal electrodes at least partially overlaps with the orthographic projection of the second ground electrode on the first substrate.

12. The phase shifter according to claim 11, wherein: The first ground electrode, the first signal electrode, the second ground electrode and the second signal electrode all include a grid structure.

13. The phase shifter according to claim 12, wherein: The mesh sizes of the grid-like structures are the same, and the widths of the grid lines of the grid-like structures are the same.

14. The phase shifter according to claim 12, wherein: The mesh density of the second signal electrode and the first signal electrode in the overlapping area is greater than or equal to the mesh density of other areas.

15. The phase shifter according to claim 14, wherein: The spacing between grid lines of the second signal electrode and the first signal electrode in the overlapping area is less than 20 μm.

16. The phase shifter according to any one of claims 12 to 15, wherein: The orthographic projections of the second signal electrode and the first signal electrode on the first substrate have an overlapping area; The phase shifter further includes: a second transparent conductive layer disposed on a side of the first signal electrode facing or facing away from the second electrode layer and in contact with the first signal electrode, wherein the orthographic projection of the second transparent conductive layer on the first substrate covers the orthographic projection of the overlapping region on the first substrate; The phase shifter further includes: a third transparent conductive layer disposed on the side of the second signal electrode facing or facing away from the first electrode layer and in contact with the second signal electrode, wherein the orthographic projection of the third transparent conductive layer on the first substrate covers the orthographic projection of the overlapping area on the first substrate.

17. The phase shifter according to claim 12, wherein: The second signal electrode and the first signal electrode are non-hollow structures in the overlapping area.

18. The phase shifter according to any one of claims 1 to 6, wherein: The first electrode layer includes a first differential transmission line and a second differential transmission line extending along a first direction and arranged in sequence along a second direction. The second electrode layer includes a plurality of signal electrodes extending along the second direction and arranged in sequence along the first direction. Each of the signal electrodes at least partially overlaps with an orthographic projection of the first differential transmission line on the first substrate, and each of the signal electrodes at least partially overlaps with an orthographic projection of the second differential transmission line on the first substrate.

19. The phase shifter according to claim 18, wherein: The first differential transmission line includes a first main body structure and a plurality of first branches connected to a side of the first main body structure facing the second differential transmission line and spaced apart from each other; the second differential transmission line includes a second main body structure and a plurality of second branches connected to a side of the second main body structure facing the first differential transmission line and spaced apart from each other; the first branches correspond to the second branches one by one, and the orthographic projection of each of the signal electrodes on the first substrate covers at least a pair of orthographic projections of the first branch and the second branch on the first substrate.

20. The phase shifter according to claim 19, wherein At least one of the first differential transmission line, the second differential transmission line, and the signal electrode includes a grid-like structure.

21. The phase shifter according to any one of claims 1 to 20, wherein: The first substrate and the second substrate each have at least one hollow structure; Alternatively, the first substrate and the second substrate both have a plurality of hollow structures, and the plurality of hollow structures are evenly arranged.

22. The phase shifter according to any one of claims 1 to 21, wherein: The material of the first substrate and the material of the second substrate include polymethacrylimide.

23. The phase shifter according to any one of claims 1 to 22, wherein: The thickness of the first substrate and the thickness of the second substrate are both 0.5 mm to 3 mm.

24. The phase shifter according to any one of claims 1 to 23, wherein: The material of the first flexible substrate and the material of the second flexible substrate include polyimide, cycloolefin polymer or polyethylene terephthalate.

25. The phase shifter according to any one of claims 1 to 24, wherein: The thickness of the first flexible substrate and the thickness of the second flexible substrate are both 1 μm to 20 μm.

26. An antenna, wherein: It comprises the phase shifter according to any one of claims 1 to 25.

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