Sputtering chamber for magnetron sputtering equipment and magnetron sputtering method

Abstract

The invention discloses a sputtering chamber for magnetron sputtering equipment and a magnetron sputtering method, which relate to the technical field of magnetron sputtering. A plurality of target materials are arranged in the sputtering chamber, and a magnet assembly is correspondingly arranged on the back of each target material. Each magnet assembly includes a plurality of permanent magnets. The permanent magnets on each magnet assembly form a plurality of concentric magnet rings. The permanent magnets in each magnet ring are arranged with the same polarity, and the polarities of the permanent magnets in two adjacent magnet rings are opposite. During operation, the magnetic field formed by each two adjacent magnet rings causes a ring-shaped etching track to be formed on the surface of the target material; a first rotating shaft is also provided in the sputtering chamber, and the first rotating shaft is connected to each magnet assembly, which drives each magnet assembly to exchange positions; the beneficial effect is that: this scheme can improve the uniformity of the magnetic field acting on the target material, reduce the influence of the etching track, increase the utilization rate of the target material and improve the density of the film layer.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetron sputtering, and in particular to a sputtering chamber for magnetron sputtering equipment and a magnetron sputtering method. Background Art

[0002] Magnetron sputtering is a physical vapor deposition technique widely used in thin film fabrication. Its basic principle is to bombard a target with high-energy particles, sputtering atoms or molecules from the target surface. These atoms or molecules are then deposited onto a substrate to form a thin film. This technique has important implications in fields such as materials science, electronic engineering, optoelectronic devices, and coating technology.

[0003] Traditional planar magnetron sputtering uses multiple strong magnets to form a circular magnetic field layout, such as the magnet layout in patent CN218812044U, which has been granted by the Hefei Innovation Institute of Beihang University. The north pole of magnet 32 is close to the back of the target material, and the south pole of magnet 31 is close to the back of the target material. The arrangement of the north-pole magnets and the south-pole magnets forms a circular magnetic field distribution. In the figure, the magnetic field direction at the dotted position of the circular area between 32 and 31 is almost parallel to the target material surface. Therefore, more electrons move than at this position, resulting in a higher etching depth of the target material at the dotted position. The magnetic field direction of the circular area where the magnets themselves are located is almost perpendicular to the target material surface, resulting in fewer moving electrons, resulting in a lower etching depth of the target material at the location of the magnets. This difference in etching depth causes the target material to form an etching track during use.

[0004] The formation of etching tracks not only results in poor uniformity of film thickness, but also leads to low target utilization. Therefore, the solution to etching tracks has always been one of the important research directions of magnetron sputtering equipment.

[0005] In addition, Beijing North Huachuang Microelectronics Equipment Co., Ltd. has been granted patent CN113699495B, which uses a spirally distributed magnet design to reduce the difference in magnetic field distribution, slowing down the formation of etching tracks, thereby improving target utilization and sputtering uniformity. However, although this design has its advantages, its asymmetric spiral distribution may also bring some disadvantages, mainly including the following:

[0006] 1. Increasing target sputtering non-uniformity

[0007] Uneven magnetic field distribution: Although the helical distribution of magnets can slow down the formation of etching tracks to a certain extent, its asymmetry can lead to more uneven magnetic field distribution on the target surface. This uneven magnetic field distribution can cause significant differences in sputtering rates in different areas of the target, exacerbating the target's sputtering non-uniformity.

[0008] Sputtering profile deformation: Uneven sputtering rate will cause the sputtering profile on the target surface to deform, forming a more complex sputtering profile, which not only affects the uniformity of the S film, but may also shorten the service life of the target.

[0009] 2. Film quality deteriorates

[0010] Non-uniform composition: Due to the non-uniform sputtering of the target material, the composition and density of the sputtered atoms or molecules may also be non-uniform when they are deposited on the substrate, thus affecting the quality and performance of the S film.

[0011] Increased structural defects: Uneven sputtering may also lead to more structural defects inside the film, such as holes and cracks, which will reduce the mechanical and optical properties of the film.

[0012] 3. Reduced sputtering efficiency

[0013] Reduced target utilization: Uneven target sputtering results in over-sputtering in some areas and under-sputtering in other areas, leading to a decrease in overall target utilization. This not only increases production costs but also results in a waste of resources.

[0014] Increased equipment maintenance costs: Due to problems such as uneven target sputtering and sputtering profile deformation, the equipment needs to be maintained and adjusted more frequently, which increases the maintenance cost and complexity of the equipment.

[0015] 4. Process stability deteriorates

[0016] Fluctuation of process parameters: The asymmetry of magnetic field distribution and the unevenness of target sputtering may cause fluctuations in process parameters (such as sputtering rate, film thickness, etc.) during the sputtering process, affecting the stability and repeatability of the S process.

[0017] Decreased product quality consistency: Fluctuations in process parameters will further lead to a decline in product quality consistency, affecting the market competitiveness and customer satisfaction of S products.

[0018] In summary, while the helical magnet design improves the magnetic field distribution discrepancy problem in planar magnetron sputtering technology to a certain extent, its asymmetric helical distribution can also lead to drawbacks such as increased target sputtering non-uniformity, reduced film quality, lower sputtering efficiency, and poor process stability. Therefore, in practical applications, trade-offs and optimized designs are necessary based on specific circumstances. Summary of the Invention

[0019] The object of the present invention is to provide a sputtering chamber for a magnetron sputtering device and a magnetron sputtering method in order to solve the above problems.

[0020] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0021] A sputtering chamber for magnetron sputtering equipment, wherein a plurality of target materials are arranged in the sputtering chamber, a magnet assembly is correspondingly arranged on the back of each target material, each magnet assembly includes a plurality of permanent magnets, and the permanent magnets on each magnet assembly form a plurality of concentric magnet rings, the permanent magnets in each magnet ring are arranged with the same polarity, and the permanent magnets in two adjacent magnet rings have opposite polarity. During operation, the magnetic field formed by each two adjacent magnet rings causes the surface of the target material to form an annular etching track;

[0022] A first rotating bearing is further provided in the sputtering chamber, and the first rotating bearing is connected to each of the magnet assemblies, and drives each of the magnet assemblies to exchange positions;

[0023] The diameters of the magnet rings in each group of magnet assemblies are different, so that the center lines of the etching tracks formed on the surface of the same target material after the positions of the magnet assemblies are interchanged do not overlap.

[0024] Preferably, the magnetic strength of each of the permanent magnets is the same.

[0025] Preferably, after the positions of the magnet assemblies are interchanged, the spacings between the center lines of the multiple etching tracks formed on the surface of the same target material are equal.

[0026] Preferably: two target materials are arranged in the sputtering chamber, and a first magnet assembly and a second magnet assembly are respectively arranged correspondingly; wherein, after exchanging positions, in the direction perpendicular to the target surface, the magnet rings in the second magnet assembly are respectively arranged correspondingly on the center line of the etching track formed by the first magnet assembly on the target surface.

[0027] Preferably: three target materials are arranged in the sputtering chamber, and three groups of magnet assemblies are arranged correspondingly; wherein, after exchanging positions, on the same target surface, the center lines of the etching tracks formed by any two groups of the magnet assemblies are located on both sides of the center line of the etching track formed by another magnet assembly, and the spacing between the center lines of adjacent etching tracks is equal.

[0028] Preferably, the permanent magnets are at the same height.

[0029] Preferably, the magnet ring is a circular ring, and the etched track is a circular track.

[0030] Preferably, the sputtering chamber further comprises a second rotating shaft, the second rotating shaft is connected to a plurality of wafer trays, the wafer trays and the targets are arranged in a one-to-one correspondence, and the second rotating shaft is used to drive the wafer trays to interchange positions.

[0031] A magnetron sputtering method is characterized in that the above-mentioned sputtering chamber is used for operation, comprising the following steps:

[0032] Step S1: The environment in the sputtering chamber is made to meet the glow discharge conditions, voltage is applied, and the first sputtering operation procedure is performed;

[0033] Step S2: turning off the voltage, rotating the first rotating bearing to rotate the first set of magnet assemblies to the original position of the second set of magnet assemblies, applying voltage, and executing the second sputtering operation procedure;

[0034] Step S3: turning off the voltage, rotating the first rotating bearing to rotate the first set of magnet assemblies to the original position of the third set of magnet assemblies, applying voltage, and executing the third sputtering operation procedure;

[0035] Step S4: Repeat steps S2-S3 until each magnet assembly completes a 360° rotation;

[0036] Step S5: stop applying voltage and close the sputtering chamber, and the operation is completed.

[0037] Preferably, for the same target material, the consumption of the target material during each sputtering operation is the same.

[0038] Compared with the prior art, the beneficial effects of the present invention are: this solution can improve the uniformity of the magnetic field acting on the target material, reduce the impact of the etching track, increase the utilization rate of the target material and improve the density of the film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0040] Figure 1 A cross-sectional view of a sputtering chamber for a magnetron sputtering device provided by an embodiment of the present invention is shown;

[0041] Figure 2 A sputtering principle diagram is shown when two sets of magnet assemblies are arranged in a sputtering chamber of a magnetron sputtering device provided by an embodiment of the present invention.

[0042] Figure 3 A sputtering principle diagram is shown when three groups of magnet assemblies are arranged in a sputtering chamber of a magnetron sputtering device provided by an embodiment of the present invention.

[0043] The following are the descriptions of the reference numerals:

[0044] 1. Upper cavity; 2. Lower cavity; 3. First rotary bearing; 4. Displacement mechanism; 5. Permanent magnet backing plate; 6. Permanent magnet; 7. Fixed plate; 8. Target backing plate; 9. Target; 10. Second rotary bearing; 11. Carrier; 12. Wafer tray; 13. First magnet assembly; 131. First S-pole magnet ring; 132. First N-pole magnet ring; 133. First etching runway; 14. Second magnet assembly; 141. Second S-pole magnet ring; 142. Second N-pole magnet ring; 14 3. Second etched runway; 15. Third magnet assembly; 151. Third S-pole magnet ring; 152. Third N-pole magnet ring; 153. Third etched runway; 16. Fourth magnet assembly; 161. Fourth S-pole magnet ring; 162. Fourth N-pole magnet ring; 163. Fourth etched runway; 17. Fifth magnet assembly; 171. Fifth S-pole magnet ring; 172. Fifth N-pole magnet ring; 173. Fifth etched runway; 34. First new etched runway; 567. Second new etched runway. DETAILED DESCRIPTION

[0045] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0046] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be internal communication between two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood based on specific circumstances.

[0047] The present invention will be further described below in conjunction with the accompanying drawings:

[0048] To meet operational requirements, the sputtering chamber of a magnetron sputtering device consists of a target 9, a wafer tray 12 located opposite the surface of the target 9, and a magnet assembly mounted behind the target backing plate 8. During operation, the controllable magnetic field formed by the magnet assembly constrains and accelerates particle motion, causing it to strike the surface of the target 9. Material sputtered by the kinetic energy of the particles is deposited on the wafer surface, completing the coating deposition process. During this process, material consumption on the surface of the target 9 is related to the distribution of the magnetic field. Magnetic flux lines are formed between the N-pole magnet and the S-pole magnet. Where the surface of the target 9 is parallel to the flux lines, the material consumption rate is fastest, while where the surface of the target 9 is perpendicular to the flux lines, the material consumption rate is slowest. After continuous operation, an etched track forms on the surface of the target 9. The centerline of the etched track is the location where the target 9 material etch rate is the highest, corresponding to the location where the magnetic flux lines are parallel to the target 9 surface. This etched track significantly reduces the utilization rate of the target 9.

[0049] This embodiment provides a sputtering chamber that can improve the utilization rate of the target material 9. The chamber contains multiple target materials 9, and a set of magnet assemblies is provided for each target material 9, and a first rotary bearing connected to each magnet assembly is also provided.

[0050] Among them, Figure 2-3 As shown, the magnets of each set of magnet assemblies are arranged differently to form different controllable magnetic fields. The first rotating shaft periodically interchanges the positions of the magnet assemblies by rotating so that each target material 9 can be regularly affected by multiple sets of different controllable magnetic fields.

[0051] As one example, as shown in the figure, two types of magnets with different arrangements, a first magnet assembly 13 and a second magnet assembly 14, are provided in the sputtering chamber. The first magnet assembly 13 and the second magnet assembly 14 are both formed by a plurality of permanent magnets 6 arranged in an array, for example, in a circular arrangement. To meet the magnetic field distribution design requirements of magnetron sputtering, for the first magnet assembly 13, the S pole magnet (such as Figure 2 The first S-pole magnet ring 131 composed of the magnet with the planed surface line on the first magnet assembly 13 and the N-pole magnet (such as Figure 2 The first N-pole magnet ring 132 composed of the magnets without planed lines on the first magnet assembly 13 is alternately arranged. Due to the magnetic field distribution formed between the S-pole magnet 30 and the N-pole magnet 40, as shown in FIG. Figure 2 As shown, a first etching track 133 is formed between each two adjacent magnet rings. Figure 2 The second S-pole magnet ring 141 composed of the magnet with the planed surface line on the second magnet assembly 14 and the N-pole magnet (such as Figure 2The second N-pole magnet rings 142 composed of the magnets without planed lines on the second magnet assembly 14 are alternately arranged. Since the ring diameters of the second S-pole magnet rings 141 and the second N-pole magnet rings 142 are different from those of the first S-pole magnet rings 131 and the first N-pole magnet rings 132, as shown in FIG. Figure 2 As shown, the center line of the first etching track 133 formed by the first magnet assembly 13 and the center line of the second etching track 143 formed by the second magnet assembly 14 do not overlap with each other. Based on the non-overlapping etching track center lines, the first rotation axis is periodically rotated so that the first magnet assembly 13 and the second magnet assembly 14 alternately act on the same target material 9 at different time periods. Figure 2 As shown, a new etching track, namely the first new etching track 34, will be formed on the surface of the target material 9. The depth of the newly formed etching track will be less than the depth of the etching track formed by using only the first magnet assembly 13 or the second magnet assembly 14, that is, the etching track is smoother, which can improve the utilization rate of the target material 9. It can be understood that the newly formed etching track has a corresponding etching track center line, and the corresponding position of the center line of the first new etching track 34 on the surface of the target material 9 is related to the position of the center line of the first etching track 133 and the center line of the second etching track 143. When the center line of the first etching track 133 and the center line of the second etching track 143 are arranged alternately, and the spacing between the center lines of each adjacent first etching track 133 and the center line of the second etching track 143 is equal, after the first magnet assembly 13 and the second magnet assembly 14 are interchanged, the newly formed etching track will be the smoothest and the utilization rate of the target material 9 will be optimal.

[0052] like Figure 2 As shown, A2 is the magnetic field strength curve at A1, B2 is the magnetic field strength curve at B1, and B3 is the magnetic field strength curve at the position of the first new etched racetrack 34.

[0053] As another example, Figure 3 As shown, three magnet assemblies with different magnet arrangements are provided in the sputtering chamber, namely the third magnet assembly 15, the fourth magnet assembly 16 and the fifth magnet assembly 17. The third magnet assembly 15, the fourth magnet assembly 16 and the fifth magnet assembly 17 are all formed by a plurality of permanent magnets 6 arranged in an array, for example, in a circular arrangement. In order to meet the magnetic field distribution design requirements of magnetron sputtering, for the third magnet assembly 15, the S pole magnet (such as Figure 3 The third S-pole magnet ring 151 composed of the magnet with the planed surface line on the third magnet assembly 15 and the N-pole magnet (such as Figure 3 The third N-pole magnet ring 152 composed of the magnets without planed lines on the third magnet assembly 15 is alternately arranged. Due to the magnetic field distribution formed between the S-pole magnet and the N-pole magnet, as shown in FIG. Figure 3As shown, a third etching track 153 is formed between each adjacent third S-pole magnet ring 151 and third N-pole magnet ring 152. Figure 3 The fourth S-pole magnet ring 161 composed of the magnet with the planed surface line on the fourth magnet assembly 16 and the N-pole magnet (such as Figure 3 The fourth N-pole magnet rings 162 formed by the fourth S-pole magnet rings 161 and the fourth N-pole magnet rings 162 are alternately arranged. Since the ring diameters of the fourth S-pole magnet rings 161 and the fourth N-pole magnet rings 162 are different from the third S-pole magnet rings 151 and the third N-pole magnet rings 152, the center line of the fourth etching track 163 formed by the fourth magnet assembly 16 does not overlap with the center line of the third etching track 153 formed by the third magnet assembly 15. For the fifth magnet assembly 17, the S-pole magnet with its S pole facing the target 9 (such as Figure 3 The fifth S-pole magnet ring 171 composed of the magnet with the planed surface line on the fifth magnet assembly 17 and the N-pole magnet (such as Figure 3 The fifth N-pole magnet ring 172 (the magnets not marked on the surface lines of the fifth magnet assembly 17) is alternately arranged. Since the ring diameters of the fifth S-pole magnet ring 171 and the fifth N-pole magnet ring 172 are different from the third S-pole magnet ring 151 and the third N-pole magnet ring 152, and are also different from the fourth S-pole magnet ring 161 and the fourth N-pole magnet ring 162, as shown in FIG. Figure 3 As shown, the center line of the fifth etching track 173 formed by the fifth magnet assembly 17 does not overlap with the center line of the third etching track 153 formed by the third magnet assembly 15 and the fourth magnet assembly 16. Based on the non-overlapping etching track center lines, the first rotation axis is periodically rotated so that the three groups of magnet assemblies act on the same target material 9 alternately in different time periods. Figure 3 As shown, a new etching track, namely the second new etching track 567, will be formed on the surface of the target material 9. The depth of the newly formed etching track will be less than the depth of the third etching track 153, the fourth etching track 163 and the fifth etching track 173 formed by using only the third magnet assembly 15, the fourth magnet assembly 16 and the fifth magnet assembly 17, that is, the etching track is smoother, which can improve the utilization rate of the target material 9. It can be understood that the newly formed second new etching track 567 has a corresponding etching track center line, and the corresponding position of the center line of the second new etching track 567 on the surface of the target material 9 is related to the position of the center line of the third etching track 153, the center line of the fourth etching track 163 and the center line of the fifth etching track 173. Figure 3As shown, when the center lines of the third etching track 153, the fourth etching track 163 and the fifth etching track 173 are arranged alternately in sequence, and the distance between any two adjacent etching track center lines is equal, after the magnet assemblies are interchanged, the newly formed etching track will be the smoothest and the utilization rate of the target material 9 will be optimal.

[0054] like Figure 3 As shown, A2 is the magnetic field strength curve at A1, B2 is the magnetic field strength curve at B1, B3 is the magnetic field strength curve after the third magnet assembly 15 and the fourth magnet assembly 16 act on the target material 9 successively, C2 is the magnetic field strength curve at C1, and C3 is the magnetic field strength curve at the position of the second new etching runway 567.

[0055] It should be noted that the magnet rings given in the above examples are arranged in a circular ring shape. The circular ring arrangement helps to form a uniform periodically changing magnetic field. In practical applications, the magnet rings can also be arranged in a heart-shaped line or an elliptical ring shape to make the sputtering rate in the central area of the target material 9 equivalent to the sputtering rate in other areas.

[0056] In some embodiments, the permanent magnet 6 is formed by stacking multiple magnet sheets in sequence, for example, by stacking multiple cylindrical strong magnets in sequence. By adjusting the number of stacked magnets, the magnetic strength of the permanent magnet 6 can be adjusted accordingly. When all permanent magnets 6 have the same magnetic strength and the same height, it helps to form a uniform periodically changing magnetic field. In application, the strength of the permanent magnets 6 in the magnet ring can also be uneven. For example, in a magnet ring arranged in a circular shape, the magnetic force of several adjacent permanent magnets 6 in the innermost magnet ring is weaker than that of other permanent magnets (by using a magnet material with lower magnetic strength or reducing the number of permanent magnets). In this case, the etching track will no longer be circular, and can have an effect similar to that of a heart-shaped line arrangement or an elliptical ring arrangement, so that the sputtering rate in the center area of the target material 9 is equivalent to the sputtering rate in other areas.

[0057] As a specific implementation structure, as shown in the figure, the sputtering chamber includes an upper chamber 1 and a lower chamber 2, and the upper chamber 1 and the lower chamber 2 are detachably connected. A fixed plate 7 is fixedly installed at the lower part of the upper chamber 1, and a target material backing plate 8 is arranged in a circular array on the fixed plate 7. Target materials 9 are installed on the lower surface of the target material backing plate 8; a first rotating bearing 3 is provided at the top of the upper chamber 1; a magnet assembly is provided at the lower end of the first rotating bearing 3 corresponding to the target material 9, which drives the magnet assemblies to interchange positions, and the magnet assembly includes a magnet backing plate 8 and a permanent magnet 6, and the magnet backing plate 5 includes a rotating motor and a plate on the rotating motor.

[0058] A second rotary bearing 10 is provided on the bottom surface of the lower cavity 2; a supporting platform 11 is fixedly installed on the top of the second rotary bearing 10; a liftable wafer tray 12 is fixedly installed on the upper surface of the supporting platform 11 corresponding to the target material back plate 8, and the wafer tray 12 includes a hydraulic cylinder and a disk body on the movable end of the hydraulic cylinder. The wafer is installed on the disk body, and the height of the disk body can be adjusted to adjust the distance between the wafer and the surface of the target material 9, so as to facilitate the robotic arm to take and place the wafer; the second rotating shaft 10 is used to drive the wafer tray 12 to interchange positions.

[0059] The bottom end of the first rotary bearing 3 is connected to the magnet assembly via a displacement mechanism 4; the displacement mechanism 4 includes a transverse and longitudinal ball screw pair to meet the requirements of the magnet assembly moving on the horizontal plane.

[0060] This embodiment also provides a magnetron sputtering method, comprising the following steps:

[0061] Step S1: The environment in the sputtering chamber is made to meet the glow discharge conditions, voltage is applied, and the first sputtering operation procedure is performed;

[0062] Step S2: Turn off the voltage, rotate the first rotating bearing 3, rotate the first set of magnet assemblies to the original position of the second set of magnet assemblies, apply voltage, and execute the second sputtering operation procedure;

[0063] Step S3: Turn off the voltage, rotate the first rotating bearing 3, rotate the first set of magnet assemblies to the original position of the third set of magnet assemblies, apply voltage, and execute the third sputtering operation procedure;

[0064] Step S4: Repeat steps S2-S3 until each magnet assembly completes a 360° rotation;

[0065] Step S5: stop applying voltage and close the sputtering chamber, and the operation is completed.

[0066] For the same target material 9 , the consumption of the target material 9 during each sputtering operation is the same.

[0067] The basic principles, main features and advantages of the present invention are shown and described above. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may be subject to various changes and improvements, and these changes and improvements shall fall within the scope of the invention claimed for protection.

Claims

1. A sputtering chamber for a magnetron sputtering device, characterized in that: A plurality of target materials (9) are arranged in the sputtering chamber, and a magnet assembly is correspondingly arranged on the back of each target material (9), and each magnet assembly includes a plurality of permanent magnets (6). The permanent magnets (6) on each magnet assembly form a plurality of concentric magnet rings, and the permanent magnets (6) in each magnet ring are arranged with the same polarity, and the polarities of the permanent magnets (6) in two adjacent magnet rings are opposite. During operation, the magnetic field formed by each two adjacent magnet rings causes a ring-shaped etching track to be formed on the surface of the target material (9); A first rotary bearing (3) is further provided in the sputtering chamber, and the first rotary bearing (3) is connected to each of the magnet assemblies, and drives each of the magnet assemblies to exchange positions; The diameters of the magnet rings in each group of magnet assemblies are different, so that the center lines of the etching tracks formed on the surface of the same target material (9) do not overlap after the positions of the magnet assemblies are interchanged; the magnet rings are circular, and the etching tracks are circular tracks.

2. The sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: The magnetic strength of each permanent magnet (6) is the same.

3. The sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: After the positions of the magnet assemblies are interchanged, the spacing between the center lines of the multiple etching tracks formed on the surface of the same target material (9) is equal.

4. The sputtering chamber for a magnetron sputtering device according to claim 3, characterized in that: Two target materials (9) are arranged in the sputtering chamber, and a first magnet assembly (13) and a second magnet assembly (14) are respectively arranged correspondingly; wherein, after the positions are interchanged, the magnet rings in the second magnet assembly (14) are respectively arranged on the center line of the etching track formed by the first magnet assembly (13) on the surface of the target material (9) in a direction perpendicular to the surface of the target material (9).

5. The sputtering chamber for a magnetron sputtering device according to claim 3, characterized in that: Three target materials (9) are arranged in the sputtering chamber, and three groups of magnet assemblies are arranged correspondingly thereto; wherein, after the positions are interchanged, on the surface of the same target material (9), the center lines of the etching tracks formed by any two groups of the magnet assemblies are located on both sides of the center line of the etching track formed by another magnet assembly, and the spacing between the center lines of adjacent etching tracks is equal.

6. The sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: The heights of the permanent magnets (6) are flush.

7. The sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: The sputtering chamber further comprises a second rotating shaft, which is connected to a plurality of wafer trays (12). The wafer trays (12) are arranged in a one-to-one correspondence with the target materials (9), and the second rotating shaft is used to drive the wafer trays (12) to exchange positions.

8. A magnetron sputtering method, characterized in that: The sputtering chamber according to any one of claims 1 to 7 is used for operation, comprising the following steps: Step S1: The environment in the sputtering chamber is made to meet the glow discharge conditions, voltage is applied, and the first sputtering operation procedure is performed; Step S2: turning off the voltage, rotating the first rotating bearing (3), rotating the first set of magnet assemblies to the original position of the second set of magnet assemblies, applying voltage, and executing the second sputtering operation procedure; Step S3: turning off the voltage, rotating the first rotating bearing (3), rotating the first set of magnet assemblies to the original position of the third set of magnet assemblies, applying voltage, and executing the third sputtering operation procedure; Step S4: Repeat steps S2-S3 until each magnet assembly completes a 360° rotation; Step S5: stop applying voltage and close the sputtering chamber, and the operation is completed.

9. The magnetron sputtering method according to claim 8, characterized in that: For the same target material (9), the consumption of the target material (9) is the same when executing each sputtering operation procedure.

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