Divergent field plasma source grid electrode assembly

Abstract

The invention relates to the technical field of spacecrafts, in particular to a divergent field plasma source grid electrode assembly, which comprises a grid electrode mounting ring, a ceramic ring, an insulating assembly and a grid electrode, and is characterized in that the grid electrode mounting ring, the ceramic ring and the grid electrode are of annular boss structures; the grid electrode is fixed on the grid electrode mounting ring through an insulating component; the ceramic ring is arranged between the grid mounting ring and the grid; and the grid mounting ring, the ceramic ring and the grid are coaxially matched and mounted. By arranging the ceramic ring and the insulation assembly, insulation installation of the grid electrode is achieved, the working condition of the plasma source can be switched by changing the potential of the grid electrode according to the electrification condition of the satellite, and then the potential of the satellite is controlled more accurately and rapidly; compared with a traditional divergent field ion thruster grid electrode assembly, the grid electrode achieves insulation, the bolts fixedly connected with the grid electrode are installed outside the discharge chamber, and the situation that the bolt assembly is sputtered in the discharge chamber, consequently, parts such as the grid electrode and a cathode are polluted, and bolt threads are sputtered and damaged and are difficult to replace is avoided.

Description

Technical Field

[0001] The present application relates to the field of spacecraft technology, and in particular to a divergent field plasma source grid assembly. Background Art

[0002] When a spacecraft is in orbit, it will be affected by the space environment effect, which will make the spacecraft charged. The resulting static electricity charging and discharging may cause spacecraft failure and cause huge losses. Under the influence of the space plasma environment, the potential on the surface of the spacecraft is uneven and changes dynamically with time. When the surface charge potential of the spacecraft reaches the discharge threshold, the space static electricity discharge it generates will cause spacecraft failure. The current large-scale use of new multifunctional spacecraft has made the problem of spacecraft charging and discharging extremely prominent. Therefore, the study of active control technology of spacecraft surface potential is of great significance to ensure the safe and stable operation of spacecraft.

[0003] The surface of a spacecraft exposed to sunlight is generally charged with a lower positive potential, while the insulating surface material of a spacecraft in the backlight may be charged to a negative high voltage of about 10kV. This high-voltage static electrode is prone to arc discharge. Passive protection methods such as anti-static coating and shielding are generally used to complete the development of various satellites, but the impact of charging and discharging effects on satellites, especially medium and high orbit satellites, is becoming increasingly prominent. The electromagnetic interference generated by satellite charging and discharging has a more obvious impact on communication satellites.

[0004] The SCATHA satellite launched by the United States in 1979 was equipped with three potential active control devices, including an electron gun and a hot filament capable of emitting hot electrons, as well as a plasma emission device capable of emitting Xe ions alone or a mixture of Xe ions and low-energy electrons. Experiments have shown that emitting charged particle beams can effectively discharge or neutralize the charges accumulated on the satellite surface. In 1995, the DSCS-III satellite carried out an on-orbit verification test study on the potential active control technology using the xenon plasma emission method. The results obtained by the satellite in the experiment were: when a low-energy plasma beam is emitted from the satellite, the charges accumulated on the satellite surface can be more effectively discharged than emitting an ion beam or electron beam alone. The polar-orbiting Polar satellite launched in 1996 used PSI to effectively control the satellite's structural potential. PSI uses xenon as the working fluid. Its working principle is to ionize xenon to form a medium-concentration plasma and eject it, thereby establishing a path for free charge movement between the satellite surface and the ambient plasma, namely a plasma bridge. The above-mentioned foreign satellite in-orbit applications show that the plasma launch device can effectively control the satellite potential, and the grid assembly is the core component of the plasma source launch device. Therefore, it is necessary to develop a divergent field plasma source grid assembly to accurately and quickly control the satellite potential. Summary of the invention

[0005] The present application provides a divergent field plasma source grid assembly, which realizes grid insulation installation through the connection of insulating components.

[0006] In order to achieve the above-mentioned purpose, the present application provides a divergent field plasma source gate assembly, including a gate mounting ring, a ceramic ring, an insulating assembly and a gate, wherein: the gate mounting ring, the ceramic ring and the gate are all annular boss structures; the gate is fixed to the gate mounting ring through the insulating assembly; the ceramic ring is arranged between the gate mounting ring and the gate; the gate mounting ring, the ceramic ring and the gate are coaxially mounted.

[0007] Furthermore, the material of the gate mounting ring is a magnetic conductive material, which is used to confine the magnetic field of the plasma source.

[0008] Furthermore, a first connection hole and a first fixing hole are provided on the grid mounting ring, wherein: the first connection hole is used to connect with the divergent field plasma source discharge chamber; the first fixing hole is used to cooperate with the insulating component for connection.

[0009] Furthermore, the ceramic ring is an integrally formed ceramic structure, provided with a second connecting hole and a second fixing hole, wherein: the second connecting hole is provided corresponding to the first connecting hole for connection with an external structure; the second fixing hole is provided corresponding to the first fixing hole for connection with an insulating component.

[0010] Furthermore, the grid is made of carbon fiber material, including a grid hole portion and a supporting and fixing portion, and the grid hole portion and the supporting and fixing portion are an integrated structure.

[0011] Furthermore, a plurality of lead-out holes are evenly distributed on the grid hole portion, and a third connection hole and a third fixing hole are arranged on the supporting fixing portion, wherein: the thickness of the grid hole portion is 0.3-1 mm; the lead-out hole is used to lead out electrons or ions; the third connection hole is arranged corresponding to the first connection hole for connecting to an external structure; the third fixing hole is arranged corresponding to the second fixing hole for cooperating with the insulating component for connection.

[0012] Furthermore, the insulating assembly includes a ceramic insulator, a protective cover and bolts, which pass through the third fixing hole, the second fixing hole and the first fixing hole in sequence to fix the ceramic insulator and the protective cover above the gate, between the gate and the ceramic ring, and below the gate mounting ring, respectively.

[0013] Furthermore, the working state of the divergent field plasma source is switched by changing the potential of the gate.

[0014] The present invention provides a divergent field plasma source grid assembly, which has the following beneficial effects:

[0015] The present application realizes the insulated installation of the grid by arranging ceramic rings and insulating components. The potential of the grid can be changed to switch the plasma source working condition according to the charging condition of the satellite, thereby controlling the satellite potential more accurately and quickly. Compared with the traditional divergent field ion thruster grid assembly, the grid is not only insulated, but the bolts connecting and fixing the grid are installed outside the discharge chamber to prevent the bolt assembly from being sputtered inside the discharge chamber, which would cause contamination of parts such as the grid and cathode and sputtering damage to the bolt thread, making it difficult to replace. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings constituting a part of this application are used to provide a further understanding of this application, so that other features, purposes and advantages of this application become more obvious. The schematic embodiment drawings and their descriptions of this application are used to explain this application and do not constitute an improper limitation on this application. In the drawings:

[0017] Figure 1 is a schematic diagram of a divergent field plasma source grid assembly provided according to an embodiment of the present application;

[0018] Figure 2 is a schematic diagram of a grid of a divergent field plasma source grid assembly provided according to an embodiment of the present application;

[0019] Figure 3 is a schematic diagram of a ceramic ring of a divergent field plasma source grid assembly provided according to an embodiment of the present application;

[0020] In the figure: 1-gate mounting ring, 2-ceramic ring, 21-second connecting hole, 22-second fixing hole, 3-insulating component, 4-gate, 41-lead-out hole, 42-third connecting hole, 43-third fixing hole. DETAILED DESCRIPTION

[0021] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0022] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0023] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0024] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to specific circumstances.

[0025] In addition, the term "plurality" shall mean two or more.

[0026] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0027] like Figure 1 As shown, the present application provides a divergent field plasma source gate assembly, including a gate mounting ring 1, a ceramic ring 2, an insulating assembly 3 and a gate 4, wherein: the gate mounting ring 1, the ceramic ring 2 and the gate 4 are all annular boss structures; the gate 4 is fixed on the gate mounting ring 1 through the insulating assembly 3; the ceramic ring 2 is arranged between the gate mounting ring 1 and the gate 4; the gate mounting ring 1, the ceramic ring 2 and the gate 4 are coaxially mounted.

[0028] Specifically, the gate structure of the conventional divergent field ion thruster grid assembly is generally a split structure, that is, the grid hole part and the supporting and fixing part are designed separately, and the insulating connection structure is only set on the supporting and fixing part, and the insulation effect is relatively poor, and the components connected and fixed thereto are generally set inside the discharge chamber, and are easily sputtered after long-term operation, which will cause contamination of parts such as the grid and the cathode. The divergent field plasma source grid assembly provided in the embodiment of the present application sets the grid structure as an integrated structure, and sets a ceramic ring 2 which is also an integrated structure between it and the grid mounting ring 1, so that the ceramic ring 2 and the insulating component 3 surrounding the supporting and fixing part will form an insulating structure in the shape of a boss as a whole, so as to achieve the overall insulation of the grid 4, with good insulation effect and strong operability; and the grid mounting ring 1 is also provided with fixing holes and connecting holes, and the bolts connected to the grid 4 can be installed outside the discharge chamber to prevent the bolt assembly from being sputtered inside the discharge chamber, resulting in contamination of parts such as the grid 4 and the cathode and sputtering damage to the bolt thread, which is difficult to replace.

[0029] Furthermore, the material of the gate mounting ring 1 is a magnetic conductive material, which is used to confine the magnetic field of the plasma source.

[0030] Furthermore, the gate mounting ring 1 is provided with a first connection hole and a first fixing hole, wherein: the first connection hole is used to connect with the divergent field plasma source discharge chamber; the first fixing hole is used to cooperate with the insulating component 3 for connection.

[0031] Specifically, the material of the gate mounting ring 1 is a magnetic conductive material, which is used to confine the magnetic field of the plasma source, and is preferably a material such as 4J29 or 4J33. A plurality of first connection holes are evenly distributed around the gate mounting ring 1. The gate mounting ring 1 is connected to the plasma source discharge chamber through the first connection holes, and is connected to the gate 4 through the cooperation of the first fixing hole and the insulating component 3, so that the gate 4 as a whole can be fixedly connected to the plasma source discharge chamber.

[0032] Further, such as Figure 3 As shown, the ceramic ring 2 is an integrally formed ceramic structure, provided with a second connection hole 21 and a second fixing hole 22, wherein: the second connection hole 21 is provided corresponding to the first connection hole, for connection with an external structure; the second fixing hole 22 is provided corresponding to the first fixing hole, for connection with the insulating component 3. The ceramic ring 2 is an integrally formed boss structure, provided between the gate 4 and the gate mounting ring 1, the second connection hole 21 is used for connection with other external structural parts, and the second fixing hole 22 is used for placing the insulating component 3, so that the ceramic ring 2 as a whole is installed in cooperation with the insulating component 3 to achieve effective insulation of the gate 4.

[0033] Further, such as Figure 2As shown, the grid 4 is made of carbon fiber material, including a grid hole portion and a supporting and fixing portion, and the grid hole portion and the supporting and fixing portion are an integrated structure.

[0034] Furthermore, a plurality of lead-out holes 41 are evenly distributed on the grid hole portion, and a third connection hole 42 and a third fixing hole 43 are provided on the supporting fixing portion, wherein: the thickness of the grid hole portion is 0.3-1 mm; the lead-out hole 41 is used to lead out electrons or ions; the third connection hole 42 is provided corresponding to the first connection hole for connecting to an external structure; the third fixing hole 43 is provided corresponding to the second fixing hole 22 for cooperating with the insulating component 3 for connection.

[0035] Specifically, the grid 4 is made of carbon fiber material that is resistant to sputtering and has small thermal deformation. The grid hole area in the middle and the supporting and fixing area around the ring are integrally formed by a one-piece molding process to finally form an integrated structure. The thickness of the grid hole is 0.3-1mm, and multiple lead-out holes 41 are evenly distributed to lead out electrons or ions; the supporting and fixing part is provided with a third connection hole 42 and a third fixing hole 43, wherein the third connection hole 42 is used to cooperate with other structural parts in the outside world and can also play a role in weight reduction; the third fixing hole 43 is also used to place the insulating component 3, and the grid 4 is fixed to the grid mounting ring 1 as a whole through the insulating component 3.

[0036] Furthermore, the insulating component 3 includes a ceramic insulating part, a protective cover and a bolt. The bolt passes through the third fixing hole 43, the second fixing hole 22 and the first fixing hole in sequence, and fixes the ceramic insulating part and the protective cover above the gate 4, between the gate 4 and the ceramic ring 2, and below the gate mounting ring 1. The insulating component 3 is used for the connection and insulation of the entire gate assembly. The ceramic insulating part preferably includes an upper ceramic and a lower ceramic, and the protective cover preferably includes an upper protective cover and a lower protective cover. The bolt passes through the third fixing hole, the upper protective cover, the upper ceramic, the second fixing hole, the first fixing hole, the lower ceramic and the lower protective cover from top to bottom in sequence, and is finally locked and fixed by a gasket and a nut, so that the ceramic ring 2 and the gate 4 are fixed in sequence above the gate mounting ring 1, and the whole cooperates with the ceramic ring 2 to achieve the insulation of the gate 4.

[0037] Furthermore, the divergent field plasma source operating state is switched by changing the potential of the gate 4. During operation, according to the actual charged state, a high voltage or a low voltage can be applied to the gate 4 to change the potential of the gate 4, thereby switching the operating state of the divergent field plasma source, and then more accurately and quickly controlling the satellite potential, and reducing the impact of the charge and discharge effect on the satellite.

[0038] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A divergent field plasma source grid assembly, characterized in that: It includes a gate mounting ring, a ceramic ring, an insulating component and a gate, wherein: The gate mounting ring, the ceramic ring and the gate are all annular boss structures; The gate is fixed on the gate mounting ring through the insulating component; The ceramic ring is arranged between the grid mounting ring and the grid; The grid mounting ring, the ceramic ring and the grid are coaxially mounted.

2. The divergent field plasma source grid assembly according to claim 1, characterized in that: The material of the grid mounting ring is a magnetic conductive material, which is used to confine the magnetic field of the plasma source.

3. The divergent field plasma source grid assembly according to claim 2, characterized in that: The gate mounting ring is provided with a first connection hole and a first fixing hole, wherein: The first connection hole is used to connect to the divergent field plasma source discharge chamber; The first fixing hole is used for being matched and connected with the insulating component.

4. The divergent field plasma source grid assembly according to claim 3, characterized in that: The ceramic ring is an integrally formed ceramic structure, and is provided with a second connection hole and a second fixing hole, wherein: The second connection hole is arranged corresponding to the first connection hole and is used for connecting to an external structure; The second fixing hole is arranged corresponding to the first fixing hole, and is used for being matched and connected with the insulating component.

5. The divergent field plasma source grid assembly according to claim 4, characterized in that: The grid is made of carbon fiber material and comprises a grid hole portion and a supporting and fixing portion, wherein the grid hole portion and the supporting and fixing portion are an integrated structure.

6. The divergent field plasma source grid assembly according to claim 5, characterized in that: The grid hole portion is evenly distributed with a plurality of lead holes, and the support fixing portion is provided with a third connection hole and a third fixing hole, wherein: The thickness of the grid hole portion is 0.3-1 mm; The extraction hole is used to extract electrons or ions; The third connection hole is arranged corresponding to the first connection hole and is used for connecting to an external structure; The third fixing hole is arranged corresponding to the second fixing hole, and is used for being matched and connected with the insulating component.

7. The divergent field plasma source grid assembly according to claim 6, characterized in that: The insulating assembly includes a ceramic insulating part, a protective cover and bolts, and the bolts pass through the third fixing hole, the second fixing hole and the first fixing hole in sequence to fix the ceramic insulating part and the protective cover above the gate, between the gate and the ceramic ring, and below the gate mounting ring, respectively.

8. The divergent field plasma source grid assembly according to claim 7, characterized in that: The working state of the divergent field plasma source is switched by changing the potential of the grid.

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