Substrate support and plasma processing apparatus

Abstract

The invention provides a substrate support and a plasma processing apparatus, which can realize inclination control and uniformity of plasma density in the circumferential direction of a substrate. The substrate support has a substrate support surface for supporting a substrate and a ring support surface for supporting an edge ring, the substrate support includes an electrostatic chuck having a first bias electrode and a second bias electrode, at least a portion of the first bias electrode is disposed below the substrate support surface, and at least a portion of the second bias electrode is disposed below the ring support surface. At least a portion of the second bias electrode is provided below the ring support surface, and the first bias electrode and the second bias electrode overlap in plan view in at least a portion of a region outside the substrate support surface and below the ring support surface.

Description

Technical Field

[0001] The present invention relates to a substrate support and a plasma processing apparatus. Background Art

[0002] Patent document 1 discloses a substrate support including a first region for mounting a substrate and a second region for mounting an edge ring, the substrate support including: a first electrode arranged in the first region to receive a first electrical bias; and a second electrode arranged in the second region to receive a second electrical bias, the second electrode extending below the first electrode in a manner opposite to the first electrode in the first region.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-158134 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The technology of the present invention provides a substrate support device that achieves both tilt controllability and uniformity of plasma density in the circumferential direction of the substrate.

[0008] Technical solutions for solving technical problems

[0009] One embodiment of the present invention is a substrate support, which has a substrate supporting surface for supporting a substrate and a ring supporting surface for supporting an edge ring, the substrate support includes an electrostatic suction cup, the electrostatic suction cup includes a first bias electrode and a second bias electrode, at least a portion of the first bias electrode is arranged below the substrate supporting surface, at least a portion of the second bias electrode is arranged below the ring supporting surface, and the first bias electrode and the second bias electrode overlap when viewed from above in at least a portion of the area outside the substrate supporting surface and below the ring supporting surface.

[0010] Effects of the Invention

[0011] According to the present invention, it is possible to provide a substrate support device that achieves both tilt controllability and uniformity of plasma density in the substrate circumferential direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is an explanatory diagram showing a configuration example of a plasma processing system according to an embodiment.

[0013] Figure 2 It is a cross-sectional view showing a structural example of a plasma processing apparatus according to an embodiment.

[0014] Figure 3It is a cross-sectional view showing a structural example of the substrate support according to the first embodiment.

[0015] Figure 4 It is a plan view showing a structural example of the substrate support according to the first embodiment, as seen from above.

[0016] Figure 5 It is a cross-sectional view showing a structural example of a substrate support according to the second embodiment.

[0017] Figure 6 It is a cross-sectional view showing a structural example of a substrate support according to the third embodiment.

[0018] Figure 7 It is a cross-sectional view showing a structural example of a substrate support according to a fourth embodiment.

[0019] Figure 8 It is a cross-sectional view showing a structural example of a substrate support according to the fifth embodiment.

[0020] Fig. 9 It is a cross-sectional view showing a structural example of a substrate support according to the sixth embodiment.

[0021] Fig.10 It is a cross-sectional view showing a structural example of a substrate support according to the seventh embodiment.

[0022] Fig.11 It is a cross-sectional view showing a structural example of a substrate support according to the eighth embodiment.

[0023] Fig.12 It is a cross-sectional view showing a structural example of a substrate support according to a ninth embodiment.

[0024] Description of Reference Numerals

[0025] 11. Substrate support

[0026] 113 Edge Ring

[0027] 121 Electrostatic chuck

[0028] 130a First bias electrode

[0029] 130b second bias electrode

[0030] 150a Substrate support surface

[0031] 150b Ring bearing surface

[0032] W substrate

[0033] CTR Crosstalk Region. DETAILED DESCRIPTION

[0034] In the manufacturing process of semiconductor devices, a processing module containing a semiconductor substrate (hereinafter referred to as a "substrate") is placed in a decompressed state, and various processing steps including plasma processing are performed on the substrate. The above-mentioned multiple processing steps are performed, for example, using a substrate processing device in which multiple processing modules are arranged around a common conveying module.

[0035] In the processing module, the substrate is placed on a substrate support. In addition to the substrate, an edge ring is placed on the substrate support so as to surround the substrate. A bias signal corresponding to the purpose of plasma processing is supplied to the substrate or the edge ring placed on the substrate support.

[0036] Patent document 1 discloses a substrate support, which includes a first electrode provided in a first region on which a substrate is mounted and a second electrode provided in a second region on which an edge ring is mounted, wherein the second electrode extends below the first electrode in a manner opposite to the first electrode in the first region. The first electrode and the second electrode are electrodes to which a bias potential is applied, and they are opposite to each other on the inner side and below the first region. It is described that by utilizing such a structure opposite to each other on the inner side of the first region, the first electrode and the second electrode are capacitively coupled, and the potential difference between the substrate and the edge ring is mitigated. It is described that by utilizing the mitigation of the potential difference, the tilt of the plasma incident angle at the peripheral portion of the substrate can be appropriately controlled.

[0037] However, the inventors have conducted in-depth research on the structure in which the first electrode and the second electrode are opposite to each other on the inner side of the first region, that is, on the inner side of the substrate, and the following has been found. That is, according to the structure in which the first electrode is opposite to a portion of the second electrode, when bias power is supplied to the electrode during plasma generation, a plasma density boundary can be generated between the first electrode side and the second electrode side above the portion in which the electrodes are opposite. The plasma density boundary is formed above the first electrode, that is, above the substrate. The plasma density boundary formed above the substrate is easily affected by the electromagnetic components of the electrostatic chuck (terminals connected to the chuck electrode, bias electrode, etc.). Therefore, above the substrate, the circumferential uniformity of the plasma density is easily deteriorated. The circumferential uniformity is improved when a structure is adopted in which the portion in which the electrodes are opposite is reduced, but in this case, there is a trade-off relationship such as the above-mentioned reduction in tilt controllability.

[0038] Therefore, the technology of the present invention provides a substrate support device capable of maintaining the tilt controllability of the peripheral edge portion of the substrate and suppressing the deterioration of the circumferential uniformity above the substrate.

[0039] Hereinafter, the structure of the substrate processing apparatus of this embodiment will be described with reference to the drawings. In addition, in this specification, the same reference numerals are attached to the elements having substantially the same functional structure, and the repeated description is omitted.

[0040] <Plasma processing system>

[0041] Figure 1 1 is a diagram for illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generating unit 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support 11 is arranged in the plasma processing space and has a substrate supporting surface 150a described later for supporting the substrate W.

[0042] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP: Capacitively Coupled Plasma), an inductively coupled plasma (ICP: Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-resonance plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma) or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including an AC (Alternating Current: Alternating Current) plasma generating unit and a DC (Direct Current: Direct Current) plasma generating unit may also be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating unit has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency: High Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0043] The control unit 2 processes computer executable commands that cause the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 may be configured to control the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be pre-stored in the storage unit 2a2, or it may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2, and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit: Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may also communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0044] <Plasma processing device>

[0045] Hereinafter, a configuration example of a capacitive coupling type plasma processing apparatus 1 will be described as an example of the plasma processing apparatus 1 . Figure 2 It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus 1 .

[0046] The plasma processing apparatus 1 of the present embodiment includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support 11 and a gas introduction unit. The gas introduction unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support 11 is arranged in the plasma processing chamber 10. The shower head 13 is arranged above the substrate support 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0047] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas inlet ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, in addition to the shower head 13, the gas inlet portion may also include one or more side gas injection portions (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0048] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from the gas source 21 corresponding thereto to the shower head 13 via the flow controller 22 corresponding thereto. Each flow controller 22 may also include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsing the flow of at least one processing gas.

[0049] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12.

[0050] In one embodiment, by supplying a bias RF signal to two or more biased lower electrodes 130 described later, a bias potential can be generated in the substrate W and the edge ring 113, ion components in the formed plasma can be introduced into the substrate W, and the tilt of the peripheral portion of the substrate can be controlled. In addition, in this specification, for the sake of convenience, the biased lower electrode 130 is described separately from other lower electrodes, but the biased lower electrode 130 can also have the function of other lower electrodes, and the case of being described only as a "lower electrode" also includes the biased lower electrode 130. The two or more biased lower electrodes 130 include a first bias electrode and a second bias electrode (described later), and the same or different bias RF signals are supplied to them.

[0051] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is configured to be coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is capable of generating a generation source RF signal (generation source RF power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may also be configured to generate a plurality of generation source RF signals having different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0052] In addition, the second RF generating unit 31b is configured to be coupled to two or more bias lower electrodes 130 via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may also be configured to generate a plurality of bias RF signals having different frequencies. In this case, the generated plurality of bias RF signals are at least supplied to either or both of the first bias electrode or the second bias electrode (described later). In addition, in various embodiments, at least one of the generating source RF signal and the bias RF signal may also be pulsed.

[0053] In one embodiment, the power supply 30 includes a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is configured to be connected to at least one lower electrode and is capable of generating a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generating unit 32b is configured to be connected to at least one upper electrode and is capable of generating a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0054] In one embodiment, the first DC generating unit 32a can generate a bias potential on the substrate W and the edge ring 113 by supplying a bias DC signal as a first DC signal to two or more bias lower electrodes 130 described later, thereby introducing ion components in the formed plasma into the substrate W and controlling the inclination of the substrate peripheral portion. In this case, the same or different bias DC signals are supplied to the first bias electrode 130a and the second bias electrode 130b described later.

[0055] In various embodiments, the first and second DC signals may also be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first and second DC generators 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0056] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can also include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by using the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0057] <Substrate Support>

[0058] (First Embodiment)

[0059] The substrate support device 11 of the first embodiment includes a main body 111 and a ring assembly 112. The main body 111 has a central area 111a for supporting a substrate W and an annular area 111b for supporting the ring assembly 112. The annular area 111b of the main body 111 surrounds the central area 111a of the main body 111 when viewed from above. The substrate W is arranged on the central area 111a of the main body 111, and the ring assembly 112 is arranged on the annular area 111b of the main body 111 in a manner of surrounding the substrate W on the central area 111a of the main body 111. The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings 113 and at least one cover ring. The edge ring 113 is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0060] The main body 111 includes a base 120 and an electrostatic chuck 121. The base 120 includes a conductive component. The conductive component of the base 120 can function as a lower electrode. The electrostatic chuck 121 is arranged on the base 120. The electrostatic chuck 121 includes a ceramic component 122. The ceramic component 122 includes a central area 111a and an annular area 111b. In addition, the electrostatic chuck 121 includes a biased lower electrode 130 and a chuck electrode 140 in the ceramic component 122. The biased lower electrode 130 includes a first bias electrode 130a provided below a substrate support surface 150a described later and a second bias electrode 130b provided below a ring support surface 150b described later. The chuck electrode 140 includes a first chuck electrode 140a provided below the central area 111a and a second chuck electrode 140b provided below the annular area 111b. In addition, other components surrounding electrostatic chuck 121, such as an annular electrostatic chuck or annular insulating member, may also have annular region 111b. In this case, ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or on both electrostatic chuck 121 and the annular insulating member.

[0061] In one embodiment, at least one other RF / DC electrode coupled to the RF power source 31 and / or the DC power source 32 may also be disposed in the ceramic member 122. In this case, the other RF / DC electrode functions as a lower electrode. In addition, in this case, the conductive member of the base 120 and the at least one other RF / DC electrode may function as a plurality of lower electrodes.

[0062] In addition, the substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 121, the ring assembly 112 and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 120a or a combination thereof. A heat transfer fluid such as salt water or gas can flow in the flow path 120a. In one embodiment, the flow path 120a is formed in the base 120, and one or more heaters are arranged in the ceramic component 122 of the electrostatic chuck 121. In addition, the substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0063] <Bias Lower Electrode>

[0064] Figure 3 and Figure 4 1 is a cross-sectional view showing an outline of a structural example of the bias lower electrode 130 according to the first embodiment and a plan view seen from above. Figure 3 , an example of a state of the substrate support 11 on which the substrate W and the edge ring 113 are placed is shown, and for the sake of convenience, the components of the ring assembly 112 other than the edge ring are omitted. Figure 4 In the figure, for the convenience of explanation, the substrate W and the edge ring 113 are omitted.

[0065] like Figure 3 As shown, the substrate W is placed on the substrate support surface 150a, and the edge ring 113 is placed on the ring support surface 150b. The substrate support surface 150a is a surface having an area overlapping with the substrate W when viewed from above when the substrate W is placed thereon. In addition, the ring support surface 150b is a surface having an area overlapping with the edge ring 113 when viewed from above when the edge ring 113 is placed thereon. In this structural example, the substrate support surface 150a is consistent with the central area 111a of the ceramic component 122, and the ring support surface 150b is consistent with the annular area 111b of the ceramic component 122.

[0066] like Figure 4As shown, the first bias electrode 130a represented by the portion surrounded by the dotted circle has a roughly disk-like shape. In addition, the second bias electrode 130b represented by the portion surrounded by the two dotted circles has a roughly ring-like shape. The first bias electrode 130a extends below the entire surface of the substrate support surface 150a, and extends to a portion of the area outside the substrate support surface 150a and below the ring support surface 150b. In addition, the second bias electrode 130b extends below the ring support surface 150b. According to this structure, the first bias electrode 130a and the second bias electrode 130b overlap when viewed from above in the area outside the substrate support surface 150a and below the ring support surface 150b. This area is called the crosstalk area CTR, and the structure that overlaps when viewed from above in the crosstalk area CTR is called "crosstalk outside the substrate." In addition, the outside of the substrate support surface 150a refers to the area outside the substrate support surface 150a. Figure 4 The substrate support surface 150a is located outside the circle defining the outer periphery of the substrate support surface 150a when viewed from above. Figure 4 In the example shown, the circle defining the outer circumference of the substrate support surface 150a overlaps with the inner dot-dash circle of the second bias electrode 130b, so the outer side of the substrate support surface 150a is located outside the inner dot-dash circle.

[0067] In addition, the substrate support 11 is provided with a first bias power supply unit 160a for supplying bias power to the first bias electrode 130a and a second bias power supply unit 160b for supplying bias power to the second bias electrode 130b. The first bias power supply unit 160a includes: a first connection layer 161a provided in parallel with the first bias electrode 130a inside the ceramic component 122; and a plurality of first connection units 162a connecting the first connection layer 161a and the first bias electrode 130a at multiple points. Similarly, the second bias power supply unit 160b includes: a second connection layer 161b provided in parallel with the second bias electrode 130b inside the ceramic component 122; and a plurality of second connection units 162b connecting the second connection layer 161b and the second bias electrode 130b at multiple points. The first bias power supply 165a is connected to the first connection layer 161a via the first supply terminal 163a and the circuit 164a. In addition, the second bias power supply 165b is connected to the second connection layer 161b via the second supply terminal 163b and the circuit 164b. In one embodiment, the first supply terminal 163a and the second supply terminal 163b are disposed inside the base 120 and the ceramic member 122 outside the substrate support surface 150a.

[0068] In one embodiment, the first bias power supply 165a, the second bias power supply 165b, and the circuits 164a and 164b are included in the power supply 30. In this case, the first bias power supply 165a, the second bias power supply 165b, and the circuits 164a and 164b are included in the second RF generator 31b, and the circuits 164a and 164b can include impedance matching circuits.

[0069] In addition, a first adsorption electric power supply unit 170a for supplying adsorption electric power to the first suction cup electrode 140a and a second adsorption electric power supply unit 170b for supplying adsorption electric power to the second suction cup electrode 140b are provided inside the base 120 and the ceramic component 122. The first adsorption electric power supply unit 170a is provided inside the ceramic component 122 and includes a vertical connection unit 171 vertically connected to the first suction cup electrode 140a. In this structural example, the vertical connection unit 171 is provided at a position overlapping with the central axis AX of the main body 111.

[0070] According to the substrate support device 11 of the above-described configuration example, the crosstalk region CTR exists outside the substrate support surface 150a. Therefore, by controlling the bias signals supplied to the first bias electrode 130a and the second bias electrode 130b, the inclination of the substrate peripheral portion during plasma generation can be controlled above the crosstalk region CTR.

[0071] In addition, when a bias signal is supplied to the bias lower electrode 130 during plasma generation, a plasma density boundary can be generated between the upper side of the substrate above the crosstalk region CTR and the upper side of the edge ring. In the crosstalk outside the substrate of this embodiment, the plasma density boundary is formed above the second bias electrode 130b, that is, above the edge ring 113. As a result, the circumferential uniformity of the plasma density above the substrate can be improved.

[0072] In addition, the first bias power supply unit 160a and the second bias power supply unit 160b can minimize the electromagnetic influence of the terminals on the boundary of the plasma density generated above the crosstalk region CTR by using a multi-point connection structure using multiple first connection parts 162a and multiple second connection parts 162b via the first connection layer 161a and the second connection layer 161b, and a structure in which the first supply end 163a and the second supply end 163b are arranged on the outside of the substrate supporting surface 150a, thereby further improving the circumferential uniformity of the plasma density above the substrate and above the edge ring 113.

[0073] In addition, by providing the vertical connection portion 171 in the first adsorption electric power supply portion 170 a at a position overlapping with the central axis AX of the main body portion 111 , the electromagnetic influence of the terminal on the circumferential uniformity of the plasma density can be minimized.

[0074] Below, use Figure 5 to Figure 12 , various embodiments of the substrate support 11 are described. Figure 3 to Figure 12 The various embodiments can be arbitrarily combined as long as they exert the above-mentioned functions and effects related to maintaining tilt controllability and improving the circumferential uniformity of plasma density and are not mutually exclusive.

[0075] (Second Embodiment)

[0076] exist Figure 5 In the substrate support 11 of the second embodiment shown, the structures of the edge ring 113 and the substrate support surface 150a are different from those of the substrate support 11 of the first embodiment. A recess 180 is formed on the upper surface of the edge ring 113 of the second embodiment. The substrate support surface 150a is a region where the central region 111a in the ceramic component 122 and the recess 180 are combined. According to this structure, the substrate support surface 150a and the ring support surface 150b partially overlap when viewed from above. In this case, the crosstalk region CTR is the outer side of such a substrate support surface 150a. In the substrate support 11 of the second embodiment, by configuring the crosstalk region CTR as described above, the same action and effect as the first embodiment can be obtained.

[0077] (Third Embodiment)

[0078] exist Figure 6 In the substrate support 11 of the third embodiment shown, the structures of the first bias electric power supply part 160a and the second bias electric power supply part 160b and the first adsorption electric power supply part 170a and the second adsorption electric power supply part 170b are different from those of the substrate support 11 of the first embodiment. The first bias electric power supply part 160a and the second bias electric power supply part 160b of the third embodiment do not have a connection layer and a plurality of connection parts, but are connected to the bias electrode using a connection end. The first bias electric power supply part 160a is set at a position overlapping with the central axis AX of the main body 111. In addition, the first adsorption electric power supply part 170a and the second adsorption electric power supply part 170b are set so that Figure 6 The vertical portion 181 provided inside the base 120, as indicated by the bold line in FIG. 1 , is symmetrically positioned with respect to the central axis AX. Figure 6The horizontal portion indicated by the dotted line in is set at the same height as the second bias electrode 130b. In addition, the connection ends of the second bias power supply unit 160b and the second adsorption power supply unit 170b, which are connected to the second suction cup electrode 140b in the vertical direction at the front of the above-mentioned horizontal portion, are arranged to be located coaxially. In the substrate support 11 of the third embodiment, a connection layer and a plurality of connection portions are not provided in the first bias power supply unit 160a and the second bias power supply unit 160b, but a configuration in which each terminal has symmetry in the circumferential direction is adopted. According to this configuration, the reduction in circumferential uniformity caused by the electromagnetic influence of the terminal on the boundary of the plasma density that can be generated above the crosstalk region CTR can be suppressed to a minimum.

[0079] In the following fourth to sixth embodiments, the structures of the first bias power supply unit 160a and the second bias power supply unit 160b and the first adsorption power supply unit 170a and the second adsorption power supply unit 170b are not limited thereto, but are the same as the third embodiment for the sake of convenience.

[0080] (Fourth Embodiment)

[0081] exist Figure 7 In the substrate support 11 of the fourth embodiment shown, the structure of the second bias electrode 130b is different from that of the substrate support 11 of the third embodiment. The second bias electrode 130b of the fourth embodiment extends not only below the ring support surface 150b, but also below the substrate support surface 150a. According to this structure, the crosstalk region CTR exists at two locations below the substrate support surface 150a and the ring support surface 150b. In the substrate support 11 of the fourth embodiment, by configuring the crosstalk region CTR as described above, a boundary of the plasma density that can be generated above the crosstalk region CTR is also generated above the substrate W. Even in this case, compared with the case where at least the entire crosstalk region CTR exists inside the substrate support surface 150a, the circumferential uniformity can be improved by the same action and effect as the third embodiment.

[0082] (Fifth Embodiment)

[0083] exist Figure 8In the substrate support 11 of the fifth embodiment shown, the structures of the first bias electrode 130a and the second bias electrode 130b are different from those of the substrate support 11 of the third embodiment. The first bias electrode 130a of the fifth embodiment extends not only below the substrate support surface 150a but also below the entire surface of the ring support surface 150b. In addition, the second bias electrode 130b extends not only below the ring support surface 150b but also below the substrate support surface 150a. In addition, the second bias electrode 130b does not extend below the entire surface of the ring support surface 150b but extends only below a part of the area. In the substrate support 11 of the fifth embodiment, the first bias electric power supply unit 160a extending below the entire surfaces of both the substrate support surface 150a and the ring support surface 150b can improve the circumferential uniformity of the plasma density at both the upper part of the substrate support surface 150a and the upper part of the ring support surface 150b. Furthermore, the tilt controllability of the substrate peripheral portion can be maintained by utilizing the crosstalk region CTR in which the first bias power supply unit 160a and the second bias electrode 130b extending below at least a portion of the ring support surface 150b overlap in a plan view.

[0084] (Sixth Embodiment)

[0085] exist Fig. 9 In the substrate support 11 of the sixth embodiment shown, the structures of the first bias electrode 130a and the second bias electrode 130b are different from those of the substrate support 11 of the third embodiment. The first bias electrode 130a of the sixth embodiment is the same as that of the fifth embodiment. The second bias electrode 130b extends only below a portion of the ring support surface 150b. In the substrate support 11 of the sixth embodiment, in addition to being able to obtain the same functions and effects as the substrate support 11 of the fifth embodiment, since there is no crosstalk area inside the substrate support surface 150a, no plasma density boundary is generated above the substrate support surface 150a, and the circumferential uniformity above the substrate can be improved.

[0086] (Seventh Embodiment)

[0087] exist Fig.10In the substrate support 11 of the seventh embodiment shown, the structure of the first bias power supply unit 160a is different from that of the substrate support 11 of the third embodiment. The first bias power supply unit 160a of the seventh embodiment is arranged outside the substrate support surface 150a and symmetrically with the second bias power supply unit 160b across the central axis AX. In the substrate support 11 of the seventh embodiment, a connection layer and a plurality of connection parts are not provided in the first bias power supply unit 160a and the second bias power supply unit 160b, but a configuration in which each terminal has symmetry in the circumferential direction is adopted. According to this configuration, the reduction in circumferential uniformity caused by the electromagnetic influence of the terminal on the boundary of the plasma density that can be generated above the crosstalk region CTR can be suppressed to a minimum.

[0088] (Eighth Embodiment)

[0089] exist Fig.11 In the substrate support 11 of the eighth embodiment shown, the structure of the ceramic component 122 in the electrostatic chuck 121 is different from that of the substrate support 11 of the third embodiment. The ceramic component 122 of the eighth embodiment includes a first layer 190a, a second layer 190b, and a third layer 190c in order from the top to the bottom. The first ceramic material constituting the first layer 190a and the third layer 190c is a different material from the second ceramic material constituting the second layer 190b. The first layer 190a constitutes the substrate support surface 150a and the ring support surface 150b, and has the second bias electrode 130b. In addition, the third layer 190c has the first bias electrode 130a. In other words, the ceramic component 122 has a structure in which the first layer 190a having the second bias electrode 130b and the third layer 190c having the first bias electrode 130a are separated by the second layer 190b. In the substrate support 11 of the eighth embodiment, a desired structure can be achieved by adjusting the distance between the first bias electrode 130a and the second bias electrode 130b, adjusting the thickness of the second layer 190b, or selecting the second ceramic material. Specifically, the electrostatic capacitance ratio between the electrostatic capacitance between the base 120 and the substrate W and the electrostatic capacitance between the base 120 and the edge ring 113 can be set to a desired value. In addition, the electrostatic capacitance ratio between the electrostatic capacitance between the first bias electrode 130a and the substrate W and the electrostatic capacitance between the second bias electrode 130b and the edge ring 113 can be set to a desired value. As an example, the above electrostatic capacitance ratios are all 1:1.

[0090] (Ninth Embodiment)

[0091] exist Fig.12In the substrate support 11 of the ninth embodiment shown, the structure of the first bias electrode 130a and the second bias electrode 130b is different from that of the substrate support 11 of the third embodiment. In the ceramic component 122 of the ninth embodiment, the first bias electrode 130a is arranged above the second bias electrode 130b. According to this structure, the crosstalk region CTR outside the substrate can also be provided. In the substrate support 11 of the ninth embodiment, by configuring the crosstalk region CTR as described above, the same action and effect as in the third embodiment can be obtained.

[0092] It should be considered that the embodiments disclosed this time are illustrative and non-restrictive in all aspects. The above-mentioned embodiments can be omitted, replaced, and changed in various ways without departing from the scope of the invention and its purpose. For example, the constituent elements of the above-mentioned embodiments can be combined arbitrarily. According to this arbitrary combination, it is of course possible to obtain the effects and effects of each constituent element involved in the combination, and according to the description of this specification, it is possible to obtain other effects and other effects that are obvious to those skilled in the art.

[0093] In addition, the effects described in this specification are merely illustrative or exemplary, and are not limiting. That is, the technology of the present invention may have other effects that are obvious to those skilled in the art based on the description of this specification in addition to or instead of the above effects.

[0094] In addition, the following configuration examples also belong to the technical scope of the present invention.

[0095] (1) A substrate support having a substrate support surface for supporting a substrate and a ring support surface for supporting an edge ring,

[0096] The substrate support includes an electrostatic chuck,

[0097] The electrostatic chuck comprises a first bias electrode and a second bias electrode.

[0098] At least a portion of the first bias electrode is disposed below the substrate support surface.

[0099] At least a portion of the second bias electrode is disposed below the ring support surface.

[0100] The first bias electrode and the second bias electrode overlap in at least a portion of a region outside the substrate support surface and below the ring support surface when viewed in a plan view.

[0101] (2) The substrate support device according to (1) above, wherein:

[0102] The first bias electrode extends below the entire surface of the substrate support surface and extends to at least a portion of a region outside the substrate support surface and below the ring support surface.

[0103] (3) The substrate support device according to (1) or (2) above, wherein:

[0104] The first bias electrode is disposed below the second bias electrode.

[0105] (4) A substrate support according to any one of (1) to (3) above, wherein:

[0106] comprising a first bias power supply unit for supplying a first bias power to the first bias electrode,

[0107] A connection point between the first bias electrode and the first bias power supply unit is provided outside the substrate support surface in a plan view.

[0108] (5) A substrate support according to any one of (1) to (3) above, comprising:

[0109] a first bias power supply unit for supplying a first bias power to the first bias electrode; and

[0110] a second bias power supply unit for supplying second bias power to the second bias electrode;

[0111] The first bias power supply unit includes:

[0112] a first connection layer disposed in parallel with the first bias electrode; and

[0113] a plurality of first connection portions provided between the first connection layer and the first bias electrode,

[0114] The second bias power supply unit includes:

[0115] a second connection layer provided in parallel with the second bias electrode; and

[0116] A plurality of second connection portions are provided between the second connection layer and the second bias electrode.

[0117] (6) A substrate support according to any one of (1) to (5), wherein:

[0118] The electrostatic chuck comprises:

[0119] a chuck electrode disposed below the substrate support surface; and

[0120] an adsorption electric power supply unit for supplying adsorption electric power to the above-mentioned chuck electrode,

[0121] The suction power supply unit includes a vertical portion extending vertically relative to the substrate support surface and connected to the suction cup electrode.

[0122] The vertical portion overlaps with the central axis of the substrate support in a plan view.

[0123] (7) A substrate support according to any one of (1) to (6) above, wherein:

[0124] comprising a base disposed below the electrostatic chuck,

[0125] The electrostatic capacitance ratio between the electrostatic capacitance between the base and the substrate and the electrostatic capacitance between the base and the edge ring is 1:1,

[0126] The electrostatic capacitance ratio of the electrostatic capacitance between the first bias electrode and the substrate and the electrostatic capacitance between the second bias electrode and the edge ring is 1:1.

[0127] (8) A substrate support according to any one of (1) to (7), wherein:

[0128] The electrostatic chuck comprises a first layer, a second layer and a third layer from top to bottom.

[0129] The first dielectric material constituting the first layer and the third layer is different from the second dielectric material constituting the second layer.

[0130] The first layer has the substrate support surface and the ring support surface, and has the second bias electrode.

[0131] The third layer includes the first bias electrode.

[0132] (9) A plasma processing apparatus comprising a substrate support having a substrate support surface for supporting a substrate and a ring support surface for supporting an edge ring,

[0133] The substrate support includes an electrostatic chuck,

[0134] The electrostatic chuck comprises a first bias electrode and a second bias electrode.

[0135] At least a portion of the first bias electrode is disposed below the substrate support surface.

[0136] At least a portion of the second bias electrode is disposed below the ring support surface.

[0137] The first bias electrode and the second bias electrode overlap in at least a portion of a region outside the substrate support surface and below the ring support surface when viewed in a plan view.

[0138] (10) The plasma processing apparatus according to (9) above, further comprising: a first bias power supply for supplying a first bias power to the first bias electrode; and a second bias power supply for supplying a second bias power to the second bias electrode.

[0139] (11) A plasma processing apparatus according to (8) or (9) above, wherein the first bias power supply and the second bias power supply are DC power supplies, and the first bias electric power and the second bias electric power are DC electric powers.

Claims

1. A substrate support having a substrate support surface for supporting a substrate and a ring support surface for supporting an edge ring, wherein: Including electrostatic chuck, The electrostatic chuck includes a first bias electrode and a second bias electrode, At least a portion of the first bias electrode is disposed below the substrate support surface, At least a portion of the second bias electrode is disposed below the ring support surface, The first bias electrode and the second bias electrode overlap in at least a portion of a region outside the substrate support surface and below the ring support surface when viewed in a plan view.

2. The substrate support device according to claim 1, characterized in that: The first bias electrode extends below the entire surface of the substrate support surface and extends to at least a portion of a region outside the substrate support surface and below the ring support surface.

3. The substrate support according to claim 1 or 2, characterized in that: The first bias electrode is disposed below the second bias electrode.

4. The substrate support device according to claim 1 or 2, characterized in that: comprising a first bias power supply unit for supplying a first bias power to the first bias electrode, A connection point between the first bias electrode and the first bias power supply unit is provided outside the substrate supporting surface in a plan view.

5. The substrate support according to claim 1 or 2, characterized in that: include: a first bias power supply unit for supplying first bias power to the first bias electrode; and a second bias power supply unit for supplying second bias power to the second bias electrode, The first bias power supply unit includes: a first connection layer disposed in parallel with the first bias electrode; and a plurality of first connection portions provided between the first connection layer and the first bias electrode, The second bias power supply unit includes: a second connection layer disposed in parallel with the second bias electrode; and A plurality of second connection portions are provided between the second connection layer and the second bias electrode.

6. The substrate support device according to claim 5, characterized in that: The electrostatic chuck comprises: A chuck electrode disposed below the substrate support surface; and an adsorption electric power supply unit for supplying adsorption electric power to the chuck electrode, The suction power supply portion includes a vertical portion extending vertically relative to the substrate support surface and connected to the suction cup electrode. The vertical portion overlaps with a central axis of the substrate support in a plan view.

7. The substrate support device according to claim 1 or 2, characterized in that: The substrate support comprises a base disposed below the electrostatic chuck, The electrostatic capacitance ratio between the base and the substrate and the electrostatic capacitance between the base and the edge ring is 1:1, The electrostatic capacitance ratio between the electrostatic capacitance between the first bias electrode and the substrate and the electrostatic capacitance between the second bias electrode and the edge ring is 1:

1.

8. The substrate support device according to claim 7, characterized in that: The electrostatic chuck includes a first layer, a second layer and a third layer in order from top to bottom, The first dielectric material constituting the first layer and the third layer is different from the second dielectric material constituting the second layer. The first layer has the substrate supporting surface and the ring supporting surface, and has the second bias electrode, The third layer has the first bias electrode.

9. A plasma processing device, characterized in that: comprising a substrate support having a substrate supporting surface for supporting the substrate and a ring supporting surface for supporting the edge ring, The substrate support comprises an electrostatic chuck, The electrostatic chuck includes a first bias electrode and a second bias electrode, At least a portion of the first bias electrode is disposed below the substrate support surface, At least a portion of the second bias electrode is disposed below the ring support surface, The first bias electrode and the second bias electrode overlap in at least a portion of a region outside the substrate support surface and below the ring support surface when viewed in a plan view.

10. The plasma processing apparatus according to claim 9, wherein: Also includes: a first bias power supply for supplying a first bias electric power to the first bias electrode; and A second bias power supply supplies a second bias power to the second bias electrode.

11. The plasma processing apparatus according to claim 10, wherein: The first bias power supply and the second bias power supply are DC power supplies, The first bias power and the second bias power are direct current power.

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