Semiconductor laser and manufacturing method thereof

The adjacent bar strips are connected by welding sheets and the ceramic substrate array is used to improve heat dissipation efficiency, which solves the spot uniformity and power density problems caused by the beam gap between bars in semiconductor lasers, achieving more efficient thermal management and stable operation.

CN119209204AActive Publication Date: 2024-12-27BWT BEIJING
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Patent Information

Application Number
CN202411708764.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-27
Publication Date
2024-12-27
Estimated Expiration
2044-11-27

AI Technical Summary

Technical Problem

In existing semiconductor lasers, the beam gap is caused by the transition heat sink between bars, which affects the spot uniformity and power density.

Method used

Welding sheets are used to connect adjacent bars, eliminate the transition heat sink, and use a ceramic substrate array to quickly introduce heat into the base to improve heat dissipation efficiency.

Benefits of technology

Improve the uniformity and power density of the light spot to ensure the safe and stable operation of the semiconductor laser.

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Abstract

The invention provides a semiconductor laser, which comprises a bar array comprising a plurality of bars, and adjacent bars are connected through soldering lugs; the ceramic substrate array comprises a plurality of ceramic substrates, and the top surfaces of the ceramic substrates are in one-to-one correspondence contact with the end surfaces of the bar rear cavities; the end heat sinks are arranged at the two ends of the bar array; the electrode parts are arranged at the two ends of the end heat sink; and the base is arranged below the ceramic substrate array and is in contact with the bottom surfaces of the ceramic substrates. According to the semiconductor laser, the adjacent bars in the bar array are directly connected through the soldering lugs, and a transition heat sink is omitted, so that the physical gap between the adjacent bars is greatly reduced, the overlap ratio of light beams emitted by the bars is higher, and the uniformity and the power density of finally synthesized light spots are improved.
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Citation Information

Patent Citations

  • Semiconductor laser stack array packaging method

    CN112366510A

  • Device and method for testing packaging performance of bar

    CN115824588A

  • Submodule-replaceable high-power semiconductor laser and packaging method thereof

    CN118801219A

  • DOPA strip semiconductor laser packaging structure

    CN208707070U

  • Semiconductor laser chip packaged by ceramic stack and horizontal array thereof

    CN221487070U