Strong micro-cavity micro-display anode structure and preparation method thereof

Abstract

The invention provides a strong microcavity micro-display anode structure and a preparation method thereof, and belongs to the field of semiconductors. The strong micro-cavity micro-display anode structure comprises a CMOS circuit layer, sub-pixel regions and a CMOS conductive through hole layer penetrating through the CMOS circuit layer, the sub-pixel regions are arranged on the CMOS circuit layer at intervals, and the sub-pixel regions are spaced by a pixel definition layer; each sub-pixel region comprises an anode metal layer, a strong micro-cavity transparent insulating layer and an annular transparent metal oxide layer which are sequentially stacked, and the annular transparent metal oxide layer wraps the strong micro-cavity transparent insulating layer. According to the invention, the annular transparent metal oxide layer is arranged, the annular transparent metal oxide layer wraps the strong micro-cavity transparent insulating layer, and the annular transparent metal oxide layer has the function of reducing the resistance in the display surface, so that the luminance is more uniform, and the problem of non-uniform luminance in the prior art is avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a strong micro-cavity micro-display anode structure and a preparation method and application thereof. Background Art

[0002] Organic light-emitting diode (OLED) display technology has the characteristics of self-luminescence, high contrast, and high response speed, and is widely suitable for application in mobile products.

[0003] Chinese patent CN117597002A discloses a related silicon-based OLED micro-display strong micro-cavity anode structure such as Figure 1 As shown, including a complementary metal oxide semiconductor (CMOS) substrate, a metal anode layer and a transparent anode layer, there is a problem of uneven light emitting brightness. Summary of the invention

[0004] In view of this, the object of the present invention is to provide a strong microcavity microdisplay anode structure and a preparation method thereof. The annular transparent metal oxide layer in the strong microcavity microdisplay anode structure of the present invention has the function of reducing the resistance within the display surface, thereby making the luminous brightness more uniform.

[0005] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0006] The present invention provides a strong microcavity microdisplay anode structure, comprising a complementary metal oxide semiconductor circuit layer, a sub-pixel region, and a CMOS conductive via layer penetrating the complementary metal oxide semiconductor circuit layer;

[0007] The sub-pixel regions are arranged at intervals on the complementary metal oxide semiconductor circuit layer, the number of the sub-pixel regions is 3N, N is a positive integer ≥ 1, and the sub-pixel regions are spaced by a pixel definition layer;

[0008] Each sub-pixel region includes an anode metal layer, a strong microcavity transparent insulating layer and an annular transparent metal oxide layer which are stacked in sequence, the annular transparent metal oxide layer wraps the strong microcavity transparent insulating layer, and the anode metal layer contacts the complementary metal oxide semiconductor circuit layer.

[0009] Preferably, the anode metal layer and the strong microcavity transparent insulating layer form a step structure, and the width of the step structure is 0.2-0.5 μm.

[0010] Preferably, the pixel definition layer has a pixel opening.

[0011] Preferably, the upper surface of the pixel definition layer further includes a blocking layer, the blocking layer includes a silicon nitride material layer and a silicon oxide material layer stacked in sequence, and the silicon nitride material layer is in contact with the pixel definition layer.

[0012] Preferably, the blocking layer has an open structure.

[0013] Preferably, the thicknesses of the strong microcavity transparent insulating layers in three adjacent sub-pixel regions are different.

[0014] Preferably, the material of the annular transparent metal oxide layer includes zinc oxide and / or indium tin oxide.

[0015] The present invention also provides a method for preparing the strong microcavity microdisplay anode structure described in the above technical solution, comprising the following steps:

[0016] Providing a complementary metal oxide semiconductor circuit layer, and forming a CMOS conductive via layer through the complementary metal oxide semiconductor circuit layer;

[0017] Depositing on the surface of the complementary metal oxide semiconductor circuit layer to form an anode metal deposition layer;

[0018] Deposition and etching are sequentially performed on the surface of the anode metal deposition layer to form a strong microcavity transparent insulating layer, and then the anode metal deposition layer is etched to expose the complementary metal oxide semiconductor circuit layer to form an anode metal layer, and then deposition is performed on the surface of the anode metal layer and the strong microcavity transparent insulating layer to form a ring-shaped transparent metal oxide layer, and deposition is performed on the surface of the exposed complementary metal oxide semiconductor circuit layer to form a pixel definition layer, thereby obtaining the strong microcavity micro-display anode structure.

[0019] Preferably, after forming the pixel definition layer, a blocking layer is deposited on the upper surface of the pixel definition layer to obtain the strong microcavity microdisplay anode structure.

[0020] Preferably, after forming the blocking layer, the method further includes etching the blocking layer to form an opening structure.

[0021] The present invention provides a strong microcavity microdisplay anode structure, comprising a complementary metal oxide semiconductor circuit layer, a sub-pixel region and a CMOS conductive through-hole layer penetrating the complementary metal oxide semiconductor circuit layer, wherein the sub-pixel regions are arranged at intervals on the complementary metal oxide semiconductor circuit layer, the number of the sub-pixel regions is 3N, N is a positive integer ≥1, and the sub-pixel regions are spaced apart by a pixel definition layer; each of the sub-pixel regions comprises an anode metal layer, a strong microcavity transparent insulating layer and an annular transparent metal oxide layer which are stacked in sequence, the annular transparent metal oxide layer wraps the strong microcavity transparent insulating layer, and the anode metal layer is in contact with the complementary metal oxide semiconductor circuit layer.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] The present invention provides an annular transparent metal oxide layer, which wraps a strong microcavity transparent insulating layer. The annular transparent metal oxide layer has the function of reducing the resistance within the display surface, thereby making the luminous brightness more uniform, effectively avoiding the problem of uneven luminous brightness existing in the strong microcavity anode structure of the silicon-based OLED microdisplay in the prior art; and at the same time can solve the IR DROP problem existing in the microdisplay.

[0024] Furthermore, the present invention stipulates that the thicknesses of the strong microcavity transparent insulating layers in the three adjacent sub-pixel areas are all different, and different thicknesses are deposited according to the absorption of different reflection wavelengths of the anode light by the RGB sub-pixel areas. In the OLED light-emitting part, a stronger light-emitting effect is achieved by constructing the correction effect of each suitable band of RGB, which greatly improves the color gamut and brightness of the device display, achieving a color gamut of more than 94% and a brightness of more than 2500nit.

[0025] Furthermore, the present invention also defines that the upper surface of the pixel definition layer also includes a blocking layer, which can better prevent the lateral migration of electrons in the OLED light-emitting layer.

[0026] The present invention also provides a method for preparing the strong microcavity microdisplay anode structure described in the above technical solution. The preparation method of the present invention is simple to operate and easy to realize industrial production. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Schematic diagram of a strong microcavity anode structure of a related silicon-based OLED microdisplay;

[0028] Figure 2 A schematic diagram of the anode structure of the strong microcavity microdisplay of the present invention;

[0029] Figure 3 A schematic diagram of a structure in which a ring-shaped transparent metal oxide layer covers a surface with a step structure;

[0030] Figure 4 A top view of a sub-pixel region having a strong microcavity transparent insulating layer of different shapes;

[0031] Figure 5 A schematic diagram of a strong microcavity microdisplay anode structure containing a blocking layer according to the present invention;

[0032] Figure 6 A schematic diagram of another strong microcavity microdisplay anode structure containing a blocking layer according to the present invention;

[0033] Figure 7 A schematic diagram of the structure of a strong microcavity transparent insulating layer in an R pixel area formed by a first deposition and a first exposure etching;

[0034] Figure 8 A schematic diagram of the structure of a strong microcavity transparent insulating layer in the R+G pixel area formed by the second deposition and the second exposure etching;

[0035] Fig. 9 A schematic diagram of the structure of a strong microcavity transparent insulating layer in the R+G+B pixel area formed by the third deposition and the third exposure etching;

[0036] Fig.10 is a schematic diagram of the structure after the anode metal layer is formed;

[0037] Fig.11 Schematic diagram of the process of etching to form an anode pattern with a step structure;

[0038] Fig.12 A schematic diagram of the structure of an anode pattern with a step structure formed by etching;

[0039] Fig.13 A schematic diagram of the structure for forming a ring-shaped transparent metal oxide layer;

[0040] Fig.14 Schematic diagram of the strong microcavity microdisplay anode structure with pixel openings. DETAILED DESCRIPTION

[0041] The present invention provides a strong microcavity microdisplay anode structure, comprising a complementary metal oxide semiconductor circuit layer (CMOS circuit layer), a sub-pixel region and a CMOS conductive through-hole layer penetrating the complementary metal oxide semiconductor circuit layer,

[0042] The sub-pixel regions are arranged at intervals on the complementary metal oxide semiconductor circuit layer, the number of the sub-pixel regions is 3N, N is a positive integer ≥ 1, and the sub-pixel regions are spaced apart by a pixel definition layer (PDL layer);

[0043] Each sub-pixel region includes an anode metal layer, a strong microcavity transparent insulating layer and an annular transparent metal oxide layer which are stacked in sequence, the annular transparent metal oxide layer wraps the strong microcavity transparent insulating layer, and the anode metal layer contacts the complementary metal oxide semiconductor circuit layer.

[0044] Figure 2 The schematic diagram of the anode structure of the strong microcavity microdisplay of the present invention is shown below. Figure 2 The strong microcavity microdisplay anode structure of the present invention is described.

[0045] The strong microcavity microdisplay anode structure provided by the present invention includes a CMOS circuit layer. The present invention has no special restrictions on the material and size of the CMOS circuit layer, and a solution well known to those skilled in the art can be adopted.

[0046] The strong microcavity microdisplay anode structure provided by the present invention comprises a CMOS conductive through-hole layer, and the CMOS conductive through-hole layer penetrates the CMOS circuit layer.

[0047] The strong microcavity microdisplay anode structure provided by the present invention comprises sub-pixel areas, wherein the sub-pixel areas are arranged at intervals on the complementary metal oxide semiconductor circuit layer, the number of the sub-pixel areas is 3N, N is a positive integer ≥1, and the sub-pixel areas are separated by a pixel definition layer (PDL layer).

[0048] The present invention has no special limitation on the material of the pixel definition layer, and a solution familiar to those skilled in the art may be adopted. In a specific embodiment of the present invention, the material of the pixel definition layer is preferably silicon oxide (SiO) material or silicon nitride (SiN) material, the silicon oxide (SiO) material is preferably SiO2, and the silicon nitride (SiN) material is preferably Si3N4.

[0049] In the present invention, the pixel definition layer preferably has a pixel opening, and the schematic diagram of the strong microcavity microdisplay anode structure is as follows: Fig.14 The present invention has no special limitation on the specific size of the pixel opening.

[0050] In the present invention, the sub-pixel region preferably includes a B sub-pixel region (B), a G sub-pixel region (G) and an R sub-pixel region (R).

[0051] In the present invention, the thickness of the strong microcavity transparent insulating layer in the three adjacent sub-pixel regions is preferably different. In the present invention, when preparing the strong microcavity transparent insulating layer, different thicknesses need to be deposited according to the absorption of different reflection wavelengths of anode light by RGB sub-pixels, preferably the B sub-pixel region is the thinnest, followed by the G sub-pixel region, and finally the R sub-pixel region. The microcavity constructed by the strong microcavity transparent insulating layer with different thicknesses greatly improves the color gamut and brightness of the device display.

[0052] In the strong microcavity microdisplay anode structure provided by the present invention, each sub-pixel area includes an anode metal layer, a strong microcavity transparent insulating layer and an annular transparent metal oxide layer stacked in sequence, the annular transparent metal oxide layer wraps the strong microcavity transparent insulating layer, and the anode metal layer is in contact with the complementary metal oxide semiconductor circuit layer.

[0053] The present invention has no special limitation on the material and size of the anode metal layer, and any solution familiar to those skilled in the art may be used, such as Al, TiN, Ti, Ag or a laminated composite metal of several layers.

[0054] In the present invention, the anode metal layer and the strong microcavity transparent insulating layer preferably form a step structure, the width of the step structure is preferably 0.2 to 0.5 μm, the width of the step structure refers to the size of the edge of the anode metal layer beyond the strong microcavity transparent insulating layer, and the step structure is specifically as follows Figure 3 as shown in .

[0055] In the present invention, the annular transparent metal oxide layer covers the surface of the step structure (such as Figure 3 As shown), that is, covering the surface of the anode metal layer and wrapping the strong microcavity transparent insulating layer.

[0056] In the present invention, the material of the strong microcavity transparent insulating layer preferably includes one or more of silicon oxide (SiO) material, silicon nitride (SiN) material and silicon oxynitride (SiON) material.

[0057] The present invention has no particular limitation on the shape and size of the strong microcavity transparent insulating layer, and any shape well known to those skilled in the art can be used. Figure 4 A top view of a sub-pixel region having a strong microcavity transparent insulating layer of different shapes.

[0058] In the present invention, the material of the annular transparent metal oxide layer preferably includes zinc oxide and / or indium tin oxide (ITO).

[0059] In the present invention, the upper surface of the pixel definition layer preferably further includes a blocking layer, and the blocking layer preferably includes a silicon nitride material layer and a silicon oxide material layer stacked in sequence, and the silicon nitride material layer is in contact with the pixel definition layer. Figure 5 As shown, the blocking layer can better prevent the lateral migration of electrons in the OLED light-emitting layer.

[0060] In the present invention, when the upper surface of the pixel definition layer further includes a blocking layer, the silicon nitride material layer overlaps the edge of the annular transparent metal oxide layer. The specific strong microcavity microdisplay anode structure is as follows: Figure 5 shown.

[0061] The present invention has no special limitation on the thickness of the silicon nitride material layer and the silicon oxide material layer, and parameters well known to those skilled in the art may be used.

[0062] In the present invention, the blocking layer preferably has an open structure, and the strong microcavity microdisplay anode structure is as follows Figure 6 shown.

[0063] The present invention also provides a method for preparing the strong microcavity microdisplay anode structure described in the above technical solution, comprising the following steps:

[0064] Providing a complementary metal oxide semiconductor circuit layer, and forming a CMOS conductive via layer through the complementary metal oxide semiconductor circuit layer;

[0065] Depositing on the surface of the complementary metal oxide semiconductor circuit layer to form an anode metal deposition layer;

[0066] Deposition and etching are sequentially performed on the surface of the anode metal deposition layer to form a strong microcavity transparent insulating layer, and then the anode metal deposition layer is etched to expose the complementary metal oxide semiconductor circuit layer to form an anode metal layer, and then deposition is performed on the surface of the anode metal layer and the strong microcavity transparent insulating layer to form a ring-shaped transparent metal oxide layer, and deposition is performed on the surface of the exposed complementary metal oxide semiconductor circuit layer to form a pixel definition layer, thereby obtaining the strong microcavity micro-display anode structure.

[0067] The present invention provides a complementary metal oxide semiconductor circuit layer, and a CMOS conductive through-hole layer is formed through the complementary metal oxide semiconductor circuit layer.

[0068] The present invention preferably utilizes CMOS technology to form a CMOS conductive via layer penetrating through the complementary metal oxide semiconductor circuit layer.

[0069] After obtaining the CMOS circuit layer and the CMOS conductive via layer, the present invention performs deposition on the surface of the complementary metal oxide semiconductor circuit layer to form an anode metal deposition layer.

[0070] After obtaining the anode metal deposition layer, the present invention sequentially deposits and etches on the surface of the anode metal deposition layer to form a strong microcavity transparent insulating layer in the sub-pixel area, and then etches the anode metal deposition layer to expose the complementary metal oxide semiconductor circuit layer to form an anode metal layer, and then deposits on the surfaces of the anode metal layer and the strong microcavity transparent insulating layer to form a ring-shaped transparent metal oxide layer, and deposits on the surface of the exposed complementary metal oxide semiconductor circuit layer to form a pixel definition layer to obtain the strong microcavity micro-display anode structure.

[0071] The invention sequentially deposits and etches on the surface of the anode metal deposition layer to form a strong microcavity transparent insulating layer.

[0072] The present invention preferably performs first deposition, first exposure and etching, second deposition, second exposure and etching, third deposition and third exposure and etching in sequence to obtain strong microcavity transparent insulating layers in different sub-pixel regions.

[0073] In the present invention, the first deposition and the first exposure etching preferably form a strong microcavity transparent insulating layer in the R pixel region, the structure of which is as follows: Figure 7 The second deposition and the second exposure etching preferably form a strong microcavity transparent insulating layer in the R+G pixel area, the structure of which is as shown Figure 8 As shown; the third deposition and the third exposure etching preferably form a strong microcavity transparent insulating layer in the R+G+B pixel area, the structure of which is as shown Fig. 9 shown.

[0074] After forming the strong microcavity transparent insulating layer of the sub-pixel region, the present invention etches the anode metal deposition layer to expose the complementary metal oxide semiconductor circuit layer to form an anode metal layer. The formed structure is as follows: Fig.10 shown.

[0075] In the present invention, during the etching process, not all areas not protected by the strong microcavity transparent insulating layer need to be etched, and the area 0.2 to 0.5 μm away from the edge of the strong microcavity transparent insulating layer needs to be protected by PR glue to prevent it from participating in the etching, and finally an anode pattern with a step structure (such as Figures 11-12 shown).

[0076] After obtaining the anode metal layer, the present invention deposits on the surface of the anode metal layer and the strong microcavity transparent insulating layer to form a ring-shaped transparent metal oxide layer. The structure formed is as follows: Fig.13 shown.

[0077] The present invention preferably deposits on the surface of the anode metal layer and the strong microcavity transparent insulating layer, and then uses an exposure and etching method to form the annular transparent metal oxide layer, and forms an annular conductive band (such as Figure 4 shown).

[0078] After forming the annular transparent metal oxide layer, the present invention deposits on the surface of the exposed complementary metal oxide semiconductor circuit layer to form a pixel definition layer to obtain the strong microcavity microdisplay anode structure.

[0079] The present invention is preferably Fig.13 A pixel definition deposition layer is deposited on the basis of the structure shown in the figure, and then the pixel definition layer is formed by an exposure and etching method to obtain a Figure 2The strong microcavity of the structure shown shows the anode structure.

[0080] In the present invention, when the pixel definition layer preferably has a pixel opening, the preparation method of the present invention further comprises etching to form the pixel opening to obtain a pixel definition layer having a pixel opening. Fig.14 The strong microcavity of the structure shown shows the anode structure.

[0081] In the present invention, after forming the pixel definition layer, it is preferred to further include depositing a stop layer on the upper surface of the pixel definition layer, and then etching to form an opening structure, so as to obtain Figure 5 and 6 The strong microcavity of the structure shown shows the anode structure.

[0082] In the present invention, the deposition, first deposition, second deposition and third deposition methods are preferably evaporation, physical vapor deposition (PVD), atomic layer deposition (ALD) or chemical vapor deposition (CVD). The present invention has no special restrictions on the specific parameters of the deposition, and methods familiar to those skilled in the art can be used.

[0083] The present invention has no special limitation on the etching method, and a photolithography and resist stripping process well known to those skilled in the art may be used. The present invention has no special limitation on the specific method of the photolithography and resist stripping process, and a method well known to those skilled in the art may be used, such as dry etching, wet etching or a combination of the two, more preferably dry etching.

[0084] The technical solutions in the present invention will be described clearly and completely below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0085] Example 1

[0086] Preparation with Figure 2 The strong microcavity microdisplay anode structure of the structure shown is constructed as follows:

[0087] (1) Using a CMOS process to form a CMOS conductive via layer penetrating the complementary metal oxide semiconductor circuit layer, performing deposition on the surface of the complementary metal oxide semiconductor circuit layer to form an anode metal deposition layer (Al), and sequentially performing a first deposition and a first exposure etching on the surface of the anode metal deposition layer to form a strong microcavity transparent insulating layer in the R pixel region, the structure of which is as follows: Figure 7 As shown, a second deposition and a second exposure etching are then performed to form a strong microcavity transparent insulating layer in the R+G pixel area, and the structure is as shown Figure 8As shown, the third deposition and the third exposure etching are performed to form a strong microcavity transparent insulating layer in the R+G+B pixel area, and the structure is as shown Fig. 9 As shown, the strong microcavity transparent insulating layer in the B pixel region is the thinnest, followed by the G pixel region, and finally the R pixel region. The material of the strong microcavity transparent insulating layer is SiO2;

[0088] (2) After forming the strong microcavity transparent insulating layer of the sub-pixel region, the anode metal deposition layer is etched to expose the complementary metal oxide semiconductor circuit layer to form an anode metal layer. The structure formed is as follows Fig.10 As shown; in the etching process, not all areas not protected by the strong microcavity transparent insulating layer need to be etched. The position 0.2 μm away from the edge of the strong microcavity transparent insulating layer needs to be protected by PR glue to prevent it from participating in the etching, and finally an anode pattern with a step structure is formed (such as Figures 11-12 shown);

[0089] (3) After the anode metal layer is obtained, deposition is performed on the surface of the anode metal layer and the strong microcavity transparent insulating layer, and then an annular transparent metal oxide layer (made of ITO) is formed by an exposure and etching method. The formed structure is as follows Fig.13 As shown, a ring-shaped conductive band (such as Figure 4 (shown in the middle rectangle);

[0090] (4) After forming the annular transparent metal oxide layer, the present invention deposits on the surface of the exposed complementary metal oxide semiconductor circuit layer, and then forms a pixel definition layer (made of SiO2) by an exposure and etching method to obtain a Figure 2 The strong microcavity of the structure shown shows the anode structure.

[0091] The strong microcavity microdisplay anode structure of this embodiment was tested, and the color gamut was NTSC 93% and the brightness was 3000 nit.

[0092] Example 2

[0093] Preparation with Fig.14 The strong microcavity microdisplay anode structure of the structure shown, steps (1) to (4) are the same as those in Example 1, the only difference being that the following is added after step (4):

[0094] (5) Etching the pixel definition layer to form a pixel opening to obtain a pixel having Fig.14 The strong microcavity of the structure shown shows the anode structure.

[0095] The strong microcavity microdisplay anode structure of this embodiment was tested, and the color gamut was NTSC96% and the brightness was 3500nit.

[0096] Example 3

[0097] Preparation with Figure 5 The strong microcavity microdisplay anode structure of the structure shown, steps (1) to (4) are the same as those in Example 1, the only difference being that the following is added after step (4):

[0098] (5) depositing a silicon nitride material layer (made of SiO2) and a silicon oxide material layer (made of Si3N4) on the upper surface of the pixel definition layer in sequence, and then etching to form an opening structure, thereby obtaining Figure 5 The strong microcavity of the structure shown shows the anode structure.

[0099] The strong microcavity microdisplay anode structure of this embodiment was tested, and the color gamut was NTSC96% and the brightness was 3500nit.

[0100] Example 4

[0101] Preparation with Figure 5 The strong microcavity microdisplay anode structure of the structure shown, steps (1) to (4) are the same as those in Example 1, the only difference being that the following is added after step (4):

[0102] (5) depositing a silicon nitride material layer (made of SiO2) and a silicon oxide material layer (made of Si3N4) on the upper surface of the pixel definition layer in sequence, and then etching to form an opening structure, thereby obtaining Figure 6 The strong microcavity of the structure shown shows the anode structure.

[0103] The strong microcavity microdisplay anode structure of this embodiment was tested, and the color gamut was NTSC96% and the brightness was 3500nit.

[0104] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A strong microcavity microdisplay anode structure, characterized in that: It includes a complementary metal oxide semiconductor circuit layer, a sub-pixel region and a CMOS conductive via layer that penetrates the complementary metal oxide semiconductor circuit layer; The sub-pixel regions are arranged at intervals on the complementary metal oxide semiconductor circuit layer, the number of the sub-pixel regions is 3N, N is a positive integer ≥ 1, and the sub-pixel regions are spaced by a pixel definition layer; Each sub-pixel region includes an anode metal layer, a strong microcavity transparent insulating layer and an annular transparent metal oxide layer which are stacked in sequence, the annular transparent metal oxide layer wraps the strong microcavity transparent insulating layer, and the anode metal layer contacts the complementary metal oxide semiconductor circuit layer.

2. The strong microcavity microdisplay anode structure according to claim 1, characterized in that: The anode metal layer and the strong microcavity transparent insulating layer form a step structure, and the width of the step structure is 0.2-0.5 μm.

3. The strong microcavity microdisplay anode structure according to claim 1, characterized in that: The pixel definition layer has a pixel opening.

4. The strong microcavity microdisplay anode structure according to claim 1, characterized in that: The upper surface of the pixel definition layer further includes a blocking layer, and the blocking layer includes a silicon nitride material layer and a silicon oxide material layer stacked in sequence, and the silicon nitride material layer is in contact with the pixel definition layer.

5. The strong microcavity microdisplay anode structure according to claim 4, characterized in that: The blocking layer has an open structure.

6. The strong microcavity microdisplay anode structure according to claim 1, characterized in that: The thicknesses of the strong microcavity transparent insulating layers in three adjacent sub-pixel regions are all different.

7. The strong microcavity microdisplay anode structure according to claim 1, characterized in that: The material of the annular transparent metal oxide layer includes zinc oxide and / or indium tin oxide.

8. The method for preparing a strong microcavity microdisplay anode structure according to any one of claims 1 to 7, characterized in that: The following steps are involved: Providing a complementary metal oxide semiconductor circuit layer, and forming a CMOS conductive via layer through the complementary metal oxide semiconductor circuit layer; Depositing on the surface of the complementary metal oxide semiconductor circuit layer to form an anode metal deposition layer; Deposition and etching are sequentially performed on the surface of the anode metal deposition layer to form a strong microcavity transparent insulating layer, and then the anode metal deposition layer is etched to expose the complementary metal oxide semiconductor circuit layer to form an anode metal layer, and then deposition is performed on the surface of the anode metal layer and the strong microcavity transparent insulating layer to form a ring-shaped transparent metal oxide layer, and deposition is performed on the surface of the exposed complementary metal oxide semiconductor circuit layer to form a pixel definition layer, thereby obtaining the strong microcavity micro-display anode structure.

9. The preparation method according to claim 8, characterized in that: After forming the pixel definition layer, the method further comprises depositing a stop layer on the upper surface of the pixel definition layer to obtain the strong microcavity microdisplay anode structure.

10. The preparation method according to claim 9, characterized in that: After forming the blocking layer, the method further includes etching the blocking layer to form an opening structure.

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