Plasma processing apparatus

Abstract

In a plasma processing apparatus disclosed by the present invention, a substrate support portion includes a susceptor and a dielectric body portion provided on the susceptor. The dielectric body portion includes a first region that supports the substrate and a second region that supports the edge ring. The first bias electrode and the second bias electrode are provided in the first region and the second region, respectively. The shortest distance dW1 between the mounting position of the substrate in the first region and the first bias electrode is equal to or less than the shortest distance dWE between the first bias electrode and the mounting position of the edge ring in the second region. The shortest distance dE1 between the second bias electrode and the mounting position of the edge ring is equal to or less than the shortest distance dEW between the second bias electrode and the mounting position of the substrate.

Description

Technical Field

[0001] An exemplary embodiment of the present invention relates to a plasma processing apparatus. Background Art

[0002] A plasma processing device is used in plasma processing of a substrate. The plasma processing device includes a chamber and a substrate support. The substrate support includes a susceptor and an electrostatic chuck. The susceptor constitutes a lower electrode. A bias power supply is connected to the susceptor. The electrostatic chuck is disposed on the susceptor. The electrostatic chuck includes an insulating layer and an electrode disposed in the insulating layer. A DC power supply is connected to the electrode of the electrostatic chuck. Such a plasma processing device is disclosed in the following patent document 1.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-205444 Summary of the invention

[0006] Technical issues to be solved by the invention

[0007] The present invention provides a technique for improving the performance of independently supplying an electrical bias to at least one of a substrate and an edge ring.

[0008] Means for solving technical problems

[0009] In an exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support portion, and at least one bias power supply. The substrate support portion is disposed in the chamber. The substrate support portion includes a susceptor, a dielectric portion, a first bias electrode, and a second bias electrode. The dielectric portion is disposed on the susceptor. The dielectric portion includes: a first region, which is configured to support a substrate placed thereon; and a second region, which is configured to surround the first region and support an edge ring placed thereon. The first bias electrode is disposed in the first region, and the second bias electrode is at least disposed in the second region. At least one bias power supply is configured to supply an electrical bias for ion attraction to the first bias electrode and the second bias electrode. The shortest distance d between the mounting position of the substrate in the first region and the first bias electrode W1 , the shortest distance d between the first bias electrode and the placement position of the edge ring in the second region WE , the shortest distance d between the second bias electrode and the placement position of the edge ring E1 , and the shortest distance d between the second bias electrode and the mounting position of the substrate EW The following formula (A) and formula (B) are satisfied.

[0010] d W1 ≤d WE(A)

[0011] d E1 ≤d EW (B)

[0012] Effects of the Invention

[0013] According to an exemplary embodiment, the performance of independently supplying an electrical bias to at least one of a substrate and an edge ring may be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0015] Figure 2 It is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0016] Figure 3 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment.

[0017] Figure 4 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment.

[0018] Figure 5 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment.

[0019] Figure 6 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment.

[0020] Figure 7 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment.

[0021] Figure 8 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment.

[0022] Fig. 9 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment.

[0023] Fig.10 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. DETAILED DESCRIPTION

[0024] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same or equivalent parts are marked with the same symbols.

[0025] Figure 1 : is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port, which is used to supply at least one processing gas to the plasma processing space; and at least one gas exhaust port, which is used to exhaust gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0026] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave plasma (HWP), or surface wave plasma (SWP).

[0027] The control unit 2 processes computer executable commands that cause the plasma processing device 1 to execute various processes described in the present invention. The control unit 2 can be configured to control the various elements of the plasma processing device 1 in a manner that executes the various processes described herein. In one embodiment, a part or all of the control unit 2 can be included in the plasma processing device 1. The control unit 2 can include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to read a program from the storage unit 2a2 and execute the read program, thereby performing various control operations. The program can be pre-stored in the storage unit 2a2, or it can be obtained through a medium when necessary. The obtained program is stored in the storage unit 2a2, and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media that can be read to the computer 2a, or it can be a communication line connected to the communication interface 2a3. The processing unit 2a1 can be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0028] Hereinafter, a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. Figure 2 It is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0029] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, and an exhaust system 40. Furthermore, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The substrate support unit 11 is electrically insulated from the frame of the plasma processing chamber 10.

[0030] The substrate support portion 11 includes a main body 111. The main body 111 has a central area 111a for supporting a substrate W and an annular area 111b for supporting an edge ring ER. A wafer is an example of a substrate W. When viewed from above, the annular area 111b of the main body 111 surrounds the central area 111a of the main body 111. The substrate W is arranged on the central area 111a of the main body 111, and the edge ring ER is arranged on the annular area 111b of the main body 111 in a manner of surrounding the substrate W on the central area 111a of the main body 111. Therefore, the central area 111a is also referred to as a substrate supporting surface for supporting the substrate W, and the annular area 111b is also referred to as a ring supporting surface for supporting the edge ring ER.

[0031] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a dielectric body 1111a and an electrostatic electrode 1111b disposed in the dielectric body 1111a.

[0032] Furthermore, the substrate support portion 11 may include a temperature adjustment module, which is configured to adjust at least one of the electrostatic chuck 1111, the edge ring ER and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110f or a combination thereof. A heat transfer fluid such as salt water or gas flows through the flow path 1110f. In one embodiment, the flow path 1110f is formed in the base 1110, and one or more heaters are arranged in the dielectric body portion 1111a of the electrostatic chuck 1111. Furthermore, the substrate support portion 11 may include a heat transfer gas supply portion, which is configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0033] The shower head 13 is configured to introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and multiple gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the multiple gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, in addition to the shower head 13, the gas introduction part may also include one or more side gas injection parts (SGI: Side Gas Injector) installed on one or more openings formed on the side wall 10a.

[0034] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from each corresponding gas source 21 to the shower head 13 via each corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0035] The exhaust system 40 can be connected to the gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0036] The following references Figure 1 and Figure 2 ,as well as Figure 3 . Figure 3 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. Figure 3 FIG. 1 shows a configuration example including a substrate support portion 11A and various power supplies. Figure 3 The substrate support portion 11A can be used as the substrate support portion 11 of the plasma processing apparatus 1 .

[0037] like Figure 3 As shown, the substrate support portion 11A includes a base 1110, a dielectric portion 1111a, a first bias electrode 114a, and a second bias electrode 114b. The base 1110 may have a substantially disk shape. The base 1110 may also be formed of a metal such as aluminum.

[0038] A high frequency power source 31 is electrically coupled to the base 1110. The high frequency power source 31 is configured to generate source radio frequency power for generating plasma in the chamber 10. The source radio frequency power has a source frequency, which may be a frequency within a range of 13 MHz to 100 MHz.

[0039] The high frequency power source 31 is electrically connected to the base 1110 via a matching device 31m. The matching device 31m has a variable impedance. The variable impedance of the matching device 31m is set so as to reduce reflection of the source radio frequency power from the load. The matching device 31m can be controlled by the control unit 2, for example.

[0040] The dielectric body 1111a is disposed on the base 1110. The dielectric body 1111a may have a substantially disk shape. The dielectric body 1111a may also be formed of ceramics such as aluminum oxide or aluminum nitride.

[0041] The dielectric body portion 1111a includes a first region R1 and a second region R2. Figure 3 In FIG. 1 , a boundary R12b between the first region R1 and the second region R2 is indicated by a dotted line. In addition, the first region R1 and the second region R2 may be joined at the boundary R12b.

[0042] The first region R1 is configured to support a substrate W placed on its upper surface R1u. The upper surface R1u is a placement position for the substrate W in the first region R1. The first region R1 is a region that includes the radial center of the dielectric body portion 1111a and is substantially circular when viewed from above. The electrostatic electrode 1111b is disposed in the first region R1. A DC power supply 51p is connected to the electrostatic electrode 1111b via a switch 51s. When a DC voltage from the DC power supply 51p is applied to the electrostatic electrode 1111b, an electrostatic attraction is generated between the first region R1 and the substrate W. The first region R1 holds the substrate W by the generated electrostatic attraction.

[0043] The second region R2 surrounds the first region R1 on the radially outer side of the first region R1. The second region R2 is configured to support the edge ring ER placed on its upper surface R2u. The upper surface R2u is the placement position of the edge ring ER in the second region R2. The second region R2 is a region that is roughly annular when viewed from above. In one embodiment, the position in the height direction of the upper surface R2u of the second region R2 may also be lower than the position in the height direction of the upper surface R1u of the first region R1. Furthermore, the position in the height direction of the lower surface R2d of the second region R2 may also be lower than the position in the height direction of the lower surface R1d of the first region R1. According to this structure, the difference between the thickness of the first region R1 and the thickness of the second region R2 can be reduced or eliminated. In addition, a portion R2b of the second region R2 may also be integrated with the base 1110.

[0044] An electrostatic electrode 113a and an electrostatic electrode 113b may also be provided in the second region R2. The electrostatic electrode 113a and the electrostatic electrode 113b may also extend in the circumferential direction relative to the central axis of the dielectric body portion 1111a. The electrostatic electrode 113b may also be provided radially outward relative to the electrostatic electrode 113a. A DC power supply 52p is connected to the electrostatic electrode 113a via a switch 52s. A DC power supply 53p is connected to the electrostatic electrode 113b via a switch 53s. When a DC voltage from the DC power supply 52p is applied to the electrostatic electrode 113a, and a DC voltage from the DC power supply 53p is applied to the electrostatic electrode 113b, an electrostatic attraction is generated between the second region R2 and the edge ring ER. The second region R2 holds the edge ring ER by the generated electrostatic attraction.

[0045] The first bias electrode 114a is provided in the first region R1. The first bias electrode 114a may be provided between the electrostatic electrode 1111b and the susceptor 1110. The first bias power supply 41 is electrically coupled to the first bias electrode 114a. The first bias power supply 41 supplies an electrical bias for ion attraction to the substrate W via the first bias electrode 114a.

[0046] In addition, the distance h1b in the height direction between the first bias electrode 114a and the lower surface R1d of the first region R1 may be equal to the distance hcb in the height direction between the electrostatic electrode 113a and the lower surface R1d of the first region R1. Furthermore, the distance h1b in the height direction between the first bias electrode 114a and the lower surface R1d of the first region R1 may be equal to the distance in the height direction between the electrostatic electrode 113b and the lower surface R1d of the first region R1. In this case, when the electrostatic chuck 1111 is manufactured by overlapping a plurality of dielectric sheets, the first bias electrode 114a and the electrostatic electrode 113a and / or the electrostatic electrode 113b can be formed in the same layer. Therefore, the electrostatic chuck 1111 is easily manufactured.

[0047] The second bias electrode 114b is provided at least in the second region R2. Figure 3 In the embodiment of the present invention, the second bias electrode 114b is only provided in the second region R2. The second bias electrode 114b may also be provided between the electrostatic electrode 113a and the electrostatic electrode 113b and the base 1110. The second bias power supply 42 is electrically coupled to the second bias electrode 114b. The second bias power supply 42 supplies an electrical bias for ion attraction to the edge ring ER via the second bias electrode 114b.

[0048] The electrical bias generated by the first bias power supply 41 and the second bias power supply 42 has a waveform period. The waveform period of the electrical bias is determined by the bias frequency. The bias frequency is, for example, a frequency of 100 kHz or more and 50 MHz or less. The time length of the waveform period of the electrical bias is the reciprocal of the bias frequency.

[0049] The electrical bias generated by each of the first bias power supply 41 and the second bias power supply 42 may also be bias RF power. At this time, the first bias power supply 41 is electrically connected to the first bias electrode 114a via a matching device 41m. The matching device 41m has a variable impedance. The variable impedance element or circuit of the matching device 41m is set in a manner to reduce the reflection of the bias RF power from the load. In addition, the second bias power supply 42 is electrically connected to the second bias electrode 114b via a matching device 42m. The matching device 42m has a variable impedance. The variable impedance element or circuit of the matching device 42m is set in a manner to reduce the reflection of the bias RF power from the load. The matching devices 41m and 42m can be controlled by the control unit 2, for example.

[0050] Alternatively, the electrical bias generated by the first bias power supply 41 and the second bias power supply 42 may be a periodically generated voltage pulse. The voltage pulse may be a negative voltage or a negative DC voltage pulse. The voltage pulse may have a positive potential, or a positive and negative potential. Furthermore, the voltage pulse may have a level that changes between two potentials. In the case where the electrical bias is a voltage pulse, the matching device 41m and the matching device 42m may not be provided.

[0051] The substrate support portion 11A may also satisfy the following equations (A) and (B). That is, the shortest distance d between the placement position of the substrate W in the first region R1 (ie, the upper surface R1u) and the first bias electrode 114a is W1 and the shortest distance d between the first bias electrode 114a and the placement position of the edge ring ER in the second region R2 (ie, the upper surface R2u). WE The following formula (A) may also be satisfied. Also, the shortest distance d between the second bias electrode 114b and the placement position of the edge ring ER (ie, the upper surface R2u) is: E1 and the shortest distance d between the second bias electrode 114b and the placement position of the substrate W (ie, the upper surface R1u) EW The following formula (B) may also be satisfied.

[0052] d W1 ≤d WE (A)

[0053] d E1 ≤d EW (B)

[0054] In addition, the shortest distance d W1 It can also be longer than the shortest distance d E1 . And, the shortest distance d WE It can also be longer than the shortest distance d EW .

[0055] When the substrate support portion 11A satisfies the formula (A), it is possible to suppress the electric bias supplied to the first bias electrode 114a from being distributed to the edge ring ER. Furthermore, when the substrate support portion 11A satisfies the formula (B), it is possible to suppress the electric bias coupled to the second bias electrode 114b from being distributed to the substrate W. Therefore, when the substrate support portion 11A satisfies the formula (A) and the formula (B), the performance of independently supplying the electric bias to the substrate W and the edge ring ER is improved.

[0056] The substrate support portion 11A may satisfy the following equations (1) to (3) in addition to or instead of equations (A) and (B).

[0057] 0.5×C W0 / SW <C E0 / S E <1.5×C W0 / S W (1)

[0058] C W1 ≥C WE (2)

[0059] C E1 ≥C EW (3)

[0060] C W0 is the electrostatic capacitance between the substrate W and the susceptor 1110. W is the surface area (upper surface or back surface) of the substrate W. C E0 S is the electrostatic capacitance between the base 1110 and the edge ring ER. E is the surface area (upper or back surface) of the edge ring ER. W1 is the electrostatic capacitance between the substrate W and the first bias electrode 114a. WE C is the electrostatic capacitance between the first bias electrode 114a and the edge ring ER. E1 C is the electrostatic capacitance between the second bias electrode 114b and the edge ring ER. EW is the electrostatic capacitance between the second bias electrode 114b and the substrate W. In addition, the electrostatic capacitance C WE And electrostatic capacitance C EW Each may be 10 (nF) or less, or 3 (nF) or less.

[0061] In the substrate support portion 11A, the electrostatic capacitance C WE 、Electrostatic capacitance C E0 , and the electrostatic capacitance C between the first bias electrode 114a and the base 1110 W2 Satisfy C WE =C W2 ×C E0 / (C W2 +C E0 ). And, the electrostatic capacitance C EW 、Electrostatic capacitance C W0 , and the electrostatic capacitance C between the second bias electrode 114b and the base 1110 E2 Satisfy C EW =C W0 ×C E2 / (C W0 +C E2 ).

[0062] Since the substrate support portion 11A satisfies the formula (1), the difference between the source RF power per unit area coupled from the substrate W to the plasma and the source RF power per unit area coupled from the edge ring ER to the plasma is reduced. Furthermore, since the substrate support portion 11A satisfies the formula (2), it is possible to suppress the electrical bias supplied to the first bias electrode 114a from being distributed to the edge ring ER. Furthermore, since the substrate support portion 11A satisfies the formula (3), it is possible to suppress the electrical bias coupled to the second bias electrode 114b from being distributed to the substrate W. Therefore, the performance of independently supplying electrical bias to the substrate W and the edge ring ER is improved.

[0063] The following references Figure 4 . Figure 4 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. Figure 4 FIG. 1 shows a configuration example including the substrate support portion 11A and various power supplies. Figure 4 The structure example shown.

[0064] use Figure 4 The plasma processing apparatus 1 of the illustrated configuration example does not include the second bias power supply 42. Figure 4 In the illustrated configuration example, the first bias power source 41 is electrically coupled to the first bias electrode 114 a via an electrical path 411 , and the first bias power source 41 is electrically coupled to the second bias electrode 114 b via an electrical path 412 .

[0065] The electrical path 411 includes a variable impedance element 411i. The electrical path 412 includes a variable impedance element 412i. The variable impedance element 411i and the variable impedance element 412i may each be a variable capacitor or another variable impedance element. The distribution ratio of the electrical bias voltage to the first bias electrode 114a and the second bias electrode 114b is adjusted by setting the variable impedance of the variable impedance element 411i and the variable impedance element 412i. Figure 4 In the illustrated configuration example, one of the variable impedance element 411i and the variable impedance element 412i may be omitted.

[0066] The following references Figure 5 . Figure 5 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. Figure 5 FIG. 2 shows a configuration example including a substrate support portion 11B and various power supplies. Figure 5 The structure example shown in FIG. 1 is a structure example shown in FIG. 1. In addition, the substrate support portion 11B can be used as the substrate support portion 11 of the plasma processing device 1. Figure 3Explanation of the differences in the illustrated configuration examples Figure 5 The structure example shown.

[0067] In the substrate support portion 11B, the base 1110 includes a first base 1110a and a second base 1110b. The first base 1110a has a substantially disk shape and is provided below the first region R1. The second base 1110b has a substantially ring shape in a plan view and is provided below the second region R2. The first base 1110a and the second base 1110b are separated from each other by a dielectric portion 116 provided therebetween. The dielectric portion 116 is formed of a dielectric.

[0068] exist Figure 5 In the illustrated configuration example, the high frequency power source 31 is electrically connected to the first base 1110a via a matching device 31m. Furthermore, the high frequency power source 32 is electrically connected to the second base 1110b via a matching device 32m. The high frequency power source 32 generates source RF power for plasma generation in the same manner as the high frequency power source 31. The matching device 32m has a variable impedance. The variable impedance of the matching device 32m is set in a manner to reduce reflection of the source RF power generated by the high frequency power source 32 from the load. In addition, Figure 5 The other structures in the structural example shown are Figure 3 The corresponding structures of the structural examples shown are the same.

[0069] The substrate support portion 11B may also satisfy the above equations (A) and (B). The substrate support portion 11B may also satisfy the above equations (1) to (3) in addition to or instead of the equations (A) and (B). WE And electrostatic capacitance C EW Each may be 10 (nF) or less, or 3 (nF) or less. In the substrate support portion 11B, the electrostatic capacitance C WE 、Electrostatic capacitance C E0 、Electrostatic capacitance C W2 , and the electrostatic capacitance C between the first base 1110a and the second base 1110b B Satisfy C WE =C W2 ×C B ×C E0 / (C W2 ×C B +C B ×C E0 +C E0 ×C W2 ). In addition, the electrostatic capacitance C B is the electrostatic capacitance of the dielectric portion 116. Also, the electrostatic capacitance C EW 、Electrostatic capacitance C W0 、Electrostatic capacitance C E2And electrostatic capacitance C B Satisfy C EW =C W0 ×C B ×C E2 / (C W0 ×C B +C×C E2 +C E2 ×C W0 ).

[0070] The following references Figure 6 . Figure 6 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. Figure 6 FIG. 2 shows a configuration example including the substrate support portion 11B and various power supplies. Figure 6 The structure example shown.

[0071] exist Figure 6 In the illustrated configuration example, the high frequency power source 31 is electrically coupled to the first pedestal 1110 a via an electrical path 311 , and the high frequency power source 31 is electrically coupled to the second pedestal 1110 b via an electrical path 312 .

[0072] The electrical path 311 includes a variable impedance element 311i. The electrical path 312 includes a variable impedance element 312i. The variable impedance element 311i and the variable impedance element 312i may each be a variable capacitor or other variable impedance element. The distribution ratio of the source RF power generated by the high-frequency power source 31 to the first base 1110a and the second base 1110b is adjusted by setting the variable impedance of the variable impedance element 311i and the variable impedance element 312i. Figure 6 In the illustrated configuration example, one of the variable impedance element 311i and the variable impedance element 312i may be omitted.

[0073] The following references Figure 7 . Figure 7 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. Figure 7 FIG. 2 shows a configuration example including the substrate support portion 11B and various power supplies. Figure 7 The following is an example of the structure shown in Figure 6 Explanation of the differences in the illustrated configuration examples Figure 7 The structure example shown.

[0074] use Figure 7 The plasma processing apparatus 1 of the illustrated configuration example does not include the second bias power supply 42. Figure 7In the illustrated configuration example, the first bias power source 41 is electrically coupled to the first bias electrode 114 a via an electrical path 411 , and the first bias power source 41 is electrically coupled to the second bias electrode 114 b via an electrical path 412 .

[0075] The electrical path 411 includes a variable impedance element 411i. The electrical path 412 includes a variable impedance element 412i. The variable impedance element 411i and the variable impedance element 412i may each be a variable capacitor or another variable impedance element. The distribution ratio of the electrical bias voltage to the first bias electrode 114a and the second bias electrode 114b is adjusted by setting the variable impedance of the variable impedance element 411i and the variable impedance element 412i. Figure 7 In the illustrated configuration example, one of the variable impedance element 411i and the variable impedance element 412i may be omitted.

[0076] The following references Figure 8 . Figure 8 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. Figure 8 FIG. 2 shows a configuration example including a substrate support portion 11C and various power supplies. Figure 8 The structure example shown in FIG. 1 is a structure example shown in FIG. 1. In addition, the substrate support portion 11C can be used as the substrate support portion 11 of the plasma processing device 1. Figure 3 Explanation of the differences in the illustrated configuration examples Figure 8 The structure example shown.

[0077] like Figure 8 As shown, the substrate support portion 11C does not include the second bias electrode 114b. The second bias power source 42 is electrically connected to the edge ring ER. The substrate support portion 11C satisfies the following equations (4) and (5).

[0078] 0.5×C W0 / S W <C E0 / S E <1.5×C W0 / S W (4)

[0079] C W1 ≥C WE =C W2 ×C E0 / (C W2 +C E0 ) (5)

[0080] C W0 is the electrostatic capacitance between the substrate W and the susceptor 1110. Wis the area of ​​the back side of the substrate W. E0 S is the electrostatic capacitance between the base 1110 and the edge ring ER. E is the area of ​​the back side of the edge ring ER. W1 is the electrostatic capacitance between the substrate W and the first bias electrode 114a. WE C is the electrostatic capacitance between the first bias electrode 114a and the edge ring ER. W2 is the electrostatic capacitance between the first bias electrode 114a and the base 1110. WE It may be 10 (nF) or may be 3 (nF) or less.

[0081] Since the substrate support portion 11C satisfies the formula (4), the difference between the source RF power per unit area coupled from the substrate W to the plasma and the source RF power per unit area coupled from the edge ring ER to the plasma is reduced. In addition, since the substrate support portion 11C satisfies the formula (5), it is possible to suppress the electrical bias supplied to the first bias electrode 114a from being distributed to the edge ring ER. Therefore, the performance of independently supplying the electrical bias to one of the substrate W and the edge ring ER can be improved.

[0082] The following references Fig. 9 . Fig. 9 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. Fig. 9 FIG. 2 shows a configuration example including a substrate support portion 11D and various power supplies. Fig. 9 The structure example shown in FIG. 1 is a structure example shown in FIG. 1 . In addition, the substrate support portion 11D can be used as the substrate support portion 11 of the plasma processing device 1. Figure 3 Explanation of the differences in the illustrated configuration examples Fig. 9 The structure example shown.

[0083] like Fig. 9 As shown in FIG. 1 , the substrate support portion 11D does not include the first bias electrode 114 a. Fig. 9 In the illustrated configuration example, the plasma processing apparatus 1 does not include the second bias power supply 42. Fig. 9 In the illustrated configuration example, the first bias power source 41 is electrically coupled to the base 1110 via an electrical path 411. Furthermore, the first bias power source 41 is electrically coupled to the second bias electrode 114b via an electrical path 412.

[0084] The electrical path 411 includes a variable impedance element 411i. The electrical path 412 includes a variable impedance element 412i. The variable impedance element 411i and the variable impedance element 412i may each be a variable capacitor or another variable impedance element. The distribution ratio of the electrical bias voltage to the first bias electrode 114a and the second bias electrode 114b is adjusted by setting the variable impedance of the variable impedance element 411i and the variable impedance element 412i. Fig. 9 In the illustrated configuration example, one of the variable impedance element 411i and the variable impedance element 412i may be omitted.

[0085] The substrate support portion 11D satisfies the following equations (6) and (7).

[0086] 0.5×C W0 / S W <C E0 / S E <1.5×C W0 / S W (6)

[0087] C E1 ≥C EW =C W0 ×C E2 / (C W0 +C E2 ) (7)

[0088] C W0 is the electrostatic capacitance between the substrate W and the susceptor 1110. W is the area of ​​the back side of the substrate W. E0 S is the electrostatic capacitance between the base 1110 and the edge ring ER. E is the area of ​​the back side of the edge ring ER. E1 C is the electrostatic capacitance between the second bias electrode 114b and the edge ring ER. EW is the electrostatic capacitance between the second bias electrode 114b and the substrate W. C E2 is the electrostatic capacitance between the second bias electrode 114b and the base 1110. EW It may be 10 (nF) or may be 3 (nF) or less.

[0089] Since the substrate support portion 11D satisfies the formula (6), the difference between the source RF power per unit area coupled from the substrate W to the plasma and the source RF power per unit area coupled from the edge ring ER to the plasma is reduced. In addition, since the substrate support portion 11D satisfies the formula (7), it is possible to suppress the electrical bias supplied to the second bias electrode 114b from being distributed to the substrate W. Therefore, the performance of independently supplying the electrical bias to one of the substrate W and the edge ring ER can be improved.

[0090] The following references Fig.10 . Fig.10 FIG. 1 is a partially enlarged cross-sectional view of an example of a substrate support portion that can be used in a plasma processing apparatus according to an exemplary embodiment. Fig.10 FIG. 2 shows a configuration example including a substrate support portion 11E and various power supplies. Fig.10 The structure example shown in FIG. 1 is a structure example shown in FIG. 1. In addition, the substrate support portion 11E can be used as the substrate support portion 11 of the plasma processing device 1. Figure 3 Explanation of the differences in the illustrated configuration examples Fig.10 The structure example shown.

[0091] In the substrate support portion 11E, the second bias electrode 114b is provided in the second region R2 and partially provided in the first region R1. That is, the second bias electrode 114b extends from the second region R2 to the first region R1. A portion of the second bias electrode 114b extends in the first region R1 so as to overlap with the first bias electrode 114a when viewed in the vertical direction (i.e., in a plan view). Fig.10 The other structures in the structural example shown are Figure 3 According to the substrate support portion 11E, the capacitance C can be adjusted by adjusting the overlapping area of ​​the first bias electrode 114a and the second bias electrode 114b in the first region R1. WE And electrostatic capacitance C EW In addition, Figure 4 to Figure 7 In the structural example, a structure in which the first bias electrode 114a and the second bias electrode 114b overlap in the first region R1 may be adopted.

[0092] Various exemplary embodiments have been described above, but the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0093] For example, the substrate support portion may not include the first bias electrode 114a, and the electrostatic electrode 1111b may also serve as the first bias electrode 114a. Also, the substrate support portion may not include the second bias electrode 114b, and the electrostatic electrodes 113a and 113b may also serve as the second bias electrode 114b.

[0094] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E16] and [G1] to [G14].

[0095] [E1]

[0096] A plasma processing device comprising:

[0097] Cavity;

[0098] A substrate support portion disposed in the chamber, comprising a base, a dielectric portion disposed on the base, a first bias electrode and a second bias electrode, wherein the dielectric portion comprises: a first region configured to support a substrate mounted thereon; and a second region configured to surround the first region and support an edge ring mounted thereon, wherein the first bias electrode is disposed in the first region, and the second bias electrode is disposed at least in the second region; and

[0099] at least one bias power supply configured to supply an electrical bias for ion attraction to the first bias electrode and the second bias electrode,

[0100] The shortest distance d between the placement position of the substrate in the first region and the first bias electrode W1 , the shortest distance d between the first bias electrode and the placement position of the edge ring in the second region WE , the shortest distance d between the second bias electrode and the placement position of the edge ring E1 , and the shortest distance d between the second bias electrode and the mounting position of the substrate EW The following formula (A) and formula (B) are satisfied.

[0101] d W1 ≤d WE (A)

[0102] d E1 ≤d EW (B)

[0103] [E2]

[0104] The plasma processing apparatus according to E1, wherein:

[0105] The plasma processing apparatus includes a first bias power supply electrically coupled to the first bias electrode, and a second bias power supply electrically coupled to the second bias electrode, as the at least one bias power supply.

[0106] [E3]

[0107] The plasma processing apparatus according to E1, wherein:

[0108] The plasma processing apparatus includes, as the at least one bias power supply, a single bias power supply electrically coupled to the first bias electrode via a first electrical path and electrically coupled to the second bias electrode via a second electrical path.

[0109] At least one of the first electrical path and the second electrical path includes a variable impedance element.

[0110] [E4]

[0111] The plasma processing apparatus according to E1, wherein:

[0112] The base includes a first base disposed below the first area and a second base disposed below the second area.

[0113] The first base and the second base are separated from each other by another dielectric portion provided therebetween.

[0114] [E5]

[0115] The plasma processing apparatus according to E4, wherein:

[0116] The plasma processing apparatus includes a first bias power supply electrically coupled to the first bias electrode, and a second bias power supply electrically coupled to the second bias electrode, as the at least one bias power supply.

[0117] [E6]

[0118] According to the plasma processing device described in E5, it also has a first high-frequency power supply electrically coupled to the first base, and a second high-frequency power supply electrically coupled to the first base, as at least one high-frequency power supply configured to generate source RF power for plasma generation.

[0119] [E7]

[0120] The plasma processing apparatus according to E4 or E5 further comprises a single high-frequency power supply electrically connected to the first susceptor via a first electrical path and electrically coupled to the second susceptor via a second electrical path, as at least one high-frequency power supply configured to generate source radio frequency power for plasma generation,

[0121] At least one of the first electrical path and the second electrical path includes a variable impedance element.

[0122] [E8]

[0123] The plasma processing apparatus according to E4, wherein:

[0124] The plasma processing apparatus includes, as the at least one bias power supply, a single bias power supply electrically coupled to the first bias electrode via a first electrical path and electrically coupled to the second bias electrode via a second electrical path.

[0125] At least one of the first electrical path and the second electrical path includes a variable impedance element,

[0126] The plasma processing apparatus includes a single high-frequency power source electrically connected to the first susceptor via a third electrical path and electrically coupled to the second susceptor via a fourth electrical path, as at least one high-frequency power source configured to generate source radio frequency power for plasma generation,

[0127] At least one of the third electrical path and the fourth electrical path includes a variable impedance element.

[0128] [E9]

[0129] The plasma processing apparatus according to any one of E1 to E8, wherein:

[0130] A portion of the second bias electrode is provided in the first region so as to overlap with the first bias electrode when viewed in the vertical direction.

[0131] [E10]

[0132] The plasma processing apparatus according to any one of E1 to E9, wherein:

[0133] The electrical bias is bias radio frequency power, or pulses of periodically generated voltage.

[0134] [E11]

[0135] The plasma processing apparatus according to any one of E1 to E10, wherein:

[0136] The position of the upper surface of the second region in the height direction is lower than the position of the upper surface of the first region in the height direction.

[0137] The position of the lower surface of the second region in the height direction is lower than the position of the lower surface of the first region in the height direction.

[0138] [E12]

[0139] The plasma processing apparatus according to any one of E1 to E11, wherein:

[0140] A portion of the second region is integrated with the base.

[0141] [E13]

[0142] The plasma processing apparatus according to any one of E1 to E12, wherein:

[0143] The first region and the second region are joined at their boundary.

[0144] [E14]

[0145] The plasma processing apparatus according to any one of E1 to E13, wherein:

[0146] The substrate support portion further includes an electrostatic electrode disposed in the second region,

[0147] A distance between the first bias electrode and the lower surface of the first region in the height direction is equal to a distance between the electrostatic electrode and the lower surface of the first region in the height direction.

[0148] [E15]

[0149] The plasma processing apparatus according to any one of E1 to E14, wherein:

[0150] The shortest distance d W1 Than the shortest distance d E1 long.

[0151] [E16]

[0152] The plasma processing apparatus according to any one of E1 to E15, wherein:

[0153] The shortest distance d WE Than the shortest distance d EW long.

[0154] [G1]

[0155] A plasma processing device comprising:

[0156] Cavity;

[0157] A substrate support portion disposed in the chamber, comprising a susceptor, a dielectric portion disposed on the susceptor, a first bias electrode and a second bias electrode, wherein the dielectric portion comprises: a first region configured to support a substrate mounted thereon; and a second region configured to surround the first region and support an edge ring mounted thereon, wherein the first bias electrode is disposed in the first region, and the second bias electrode is at least disposed in the second region;

[0158] at least one high frequency power source electrically coupled to the susceptor and configured to generate source radio frequency power for plasma generation; and

[0159] at least one bias power supply configured to supply an electrical bias for ion attraction to the first bias electrode and the second bias electrode,

[0160] The electrostatic capacitance C between the substrate and the base W0 , the area S of the back side of the substrate W , the electrostatic capacitance C between the base and the edge ringE0 , the area S of the back side of the edge ring E , the electrostatic capacitance C between the substrate and the first bias electrode W1 , the electrostatic capacitance C between the first bias electrode and the edge ring WE , the electrostatic capacitance C between the second bias electrode and the edge ring E1 , and the electrostatic capacitance C between the second bias electrode and the substrate EW The following formulas (1) to (3) are satisfied.

[0161] 0.5×C W0 / S W <C E0 / S E <1.5×C W0 / S W (1)

[0162] C W1 ≥C WE (2)

[0163] C E1 ≥C EW (3)

[0164] In the embodiment of G1, the difference between the source RF power per unit area coupled from the substrate to the plasma and the source RF power per unit area coupled from the edge ring to the plasma is reduced. In addition, in the embodiment of G1, it is possible to suppress the electrical bias supplied to the first bias electrode from being distributed to the edge ring. In addition, in the embodiment of G1, it is possible to suppress the electrical bias supplied to the second bias electrode from being distributed to the substrate. Therefore, according to the embodiment of G1, the performance of independently supplying electrical bias to the substrate and the edge ring can be improved. In addition, C WE and C EW It may be 10 (nF) or less.

[0165] [G2]

[0166] The plasma processing device according to G1, wherein:

[0167] The plasma processing apparatus includes a first bias power supply electrically coupled to the first bias electrode, and a second bias power supply electrically coupled to the second bias electrode, as the at least one bias power supply.

[0168] [G3]

[0169] The plasma processing device according to G1, wherein:

[0170] The plasma processing apparatus includes, as the at least one bias power supply, a single bias power supply electrically coupled to the first bias electrode via a first electrical path and electrically coupled to the second bias electrode via a second electrical path.

[0171] At least one of the first electrical path and the second electrical path includes a variable impedance element.

[0172] [G4]

[0173] The plasma processing apparatus according to G2 or G3, wherein:

[0174] The electrostatic capacitance C WE , the electrostatic capacitance C E0 , and the electrostatic capacitance C between the first bias electrode and the base W2 Satisfy C WE =C W2 ×C E0 / (C W2 +C E0 ),

[0175] The electrostatic capacitance C EW , the electrostatic capacitance C W0 , and the electrostatic capacitance C between the second bias electrode and the base E2 Satisfy C EW =C W0 ×C E2 / (C W0 +C E2 ).

[0176] [G5]

[0177] The plasma processing device according to G1, wherein:

[0178] The base includes a first base disposed below the first area and a second base disposed below the second area.

[0179] The first base and the second base are separated from each other by another dielectric portion provided therebetween.

[0180] [G6]

[0181] The plasma processing device according to G5, wherein:

[0182] The plasma processing apparatus includes a first bias power supply electrically coupled to the first bias electrode, and a second bias power supply electrically coupled to the second bias electrode, as the at least one bias power supply.

[0183] [G7]

[0184] The plasma processing device according to G6, wherein:

[0185] The plasma processing apparatus includes a first high-frequency power source electrically coupled to the first susceptor, and a second high-frequency power source electrically coupled to the first susceptor as the at least one high-frequency power source.

[0186] [G8]

[0187] The plasma processing device according to G5, wherein:

[0188] The plasma processing apparatus includes, as the at least one high-frequency power source, a single high-frequency power source electrically connected to the first susceptor via a first electrical path and electrically coupled to the second susceptor via a second electrical path.

[0189] At least one of the first electrical path and the second electrical path includes a variable impedance element.

[0190] [G9]

[0191] The plasma processing device according to G5, wherein:

[0192] The plasma processing apparatus includes, as the at least one bias power supply, a single bias power supply electrically coupled to the first bias electrode via a first electrical path and electrically coupled to the second bias electrode via a second electrical path.

[0193] At least one of the first electrical path and the second electrical path includes a variable impedance element,

[0194] The plasma processing apparatus includes, as the at least one high-frequency power source, a single high-frequency power source electrically connected to the first susceptor via a third electrical path and electrically coupled to the second susceptor via a fourth electrical path.

[0195] At least one of the third electrical path and the fourth electrical path includes a variable impedance element.

[0196] [G10]

[0197] A plasma processing device according to any one of G5 to G9, wherein:

[0198] The electrostatic capacitance C WE , the electrostatic capacitance C E0 , the electrostatic capacitance C between the first bias electrode and the base W2 , and the electrostatic capacitance C between the first base and the second base B Satisfy C WE =C W2 ×C B ×CE0 / (C W2 ×C B +C B ×C E0 +C E0 ×C W2 ),

[0199] The electrostatic capacitance C EW , the electrostatic capacitance C W0 , the electrostatic capacitance C between the second bias electrode and the base E2 , and the electrostatic capacitance C B Satisfy C EW =C W0 ×C B ×C E2 / (C W0 ×C B +C×C E2 +C E2 ×C W0 ).

[0200] [G11]

[0201] A plasma processing device according to any one of G1 to G10, wherein:

[0202] A portion of the second bias electrode is provided in the first region so as to overlap with the first bias electrode when viewed in the vertical direction.

[0203] [G12]

[0204] A plasma processing device comprising:

[0205] Cavity;

[0206] A substrate support portion disposed in the chamber, comprising a susceptor, a dielectric portion disposed on the susceptor, and a bias electrode, wherein the dielectric portion comprises: a first region configured to support a substrate mounted thereon; and a second region configured to surround the first region and support an edge ring mounted thereon, wherein the bias electrode is disposed in the first region;

[0207] a high frequency power source electrically coupled to the susceptor and configured to generate source radio frequency power for plasma generation;

[0208] a first bias power supply electrically coupled to the bias electrode and configured to supply an electrical bias for ion attraction to the bias electrode; and

[0209] a second bias power supply electrically coupled to the edge ring and configured to supply an electrical bias for ion attraction to the edge ring,

[0210] The electrostatic capacitance C between the substrate and the base W0 , the area S of the back side of the substrate W , the electrostatic capacitance C between the base and the edge ring E0 , the area S of the back side of the edge ring E , the electrostatic capacitance C between the substrate and the bias electrode W1 , the electrostatic capacitance C between the bias electrode and the edge ring WE , and the electrostatic capacitance C between the bias electrode and the base W2 The following equations (4) and (5) are satisfied.

[0211] 0.5×C W0 / S W <C E0 / S E <1.5×C W0 / S W (4)

[0212] C W1 ≥C WE =C W2 ×C E0 / (C W2 +C E0 ) (5)

[0213] In the embodiment of G12, the difference between the source RF power per unit area coupled from the substrate to the plasma and the source RF power per unit area coupled from the edge ring to the plasma is reduced. In addition, in the embodiment of G12, it is possible to suppress the electrical bias supplied to the bias electrode from being distributed to the edge ring. Therefore, according to the embodiment of G12, the performance of independently supplying the electrical bias to one of the substrate and the edge ring can be improved. In addition, C WE It may be 10 (nF) or less.

[0214] [G13]

[0215] A plasma processing device comprising:

[0216] Cavity;

[0217] A substrate support portion disposed in the chamber, comprising a susceptor, a dielectric portion disposed on the susceptor, and a bias electrode, wherein the dielectric portion comprises: a first region configured to support a substrate mounted thereon; and a second region configured to surround the first region and support an edge ring mounted thereon, wherein the bias electrode is disposed in the second region;

[0218] a high frequency power supply electrically coupled to the susceptor and configured to generate source radio frequency power for plasma generation; and

[0219] a bias power supply electrically coupled to the susceptor, electrically coupled to the susceptor via a first electrical path, electrically coupled to the bias electrode via a second electrical path, and configured to supply an electrical bias for ion attraction to the susceptor and the bias electrode, wherein at least one of the first electrical path and the second electrical path includes a variable impedance element,

[0220] The electrostatic capacitance C between the substrate and the base W0 , the area S of the back side of the substrate W , the electrostatic capacitance C between the base and the edge ring E0 , the area S of the back side of the edge ring E , the electrostatic capacitance C between the edge ring and the bias electrode E1 , the electrostatic capacitance C between the bias electrode and the substrate EW , and the electrostatic capacitance C between the bias electrode and the base E2 The following equations (6) and (7) are satisfied.

[0221] 0.5×C W0 / S W <C E0 / S E <1.5×C W0 / S W (6)

[0222] C E1 ≥C EW =C W0 ×C E2 / (C W0 +C E2 ) (7)

[0223] In the embodiment of G13, the difference between the source RF power per unit area coupled from the substrate to the plasma and the source RF power per unit area coupled from the edge ring to the plasma is reduced. In addition, in the embodiment of G13, it is possible to suppress the electrical bias supplied to the bias electrode from being distributed to the substrate. Therefore, according to the embodiment of G13, the performance of independently supplying the electrical bias to one of the substrate and the edge ring can be improved. In addition, C EW It may be 10 (nF) or less.

[0224] [G14]

[0225] A plasma processing device according to any one of G1 to G13, wherein:

[0226] The electrical bias is bias radio frequency power, or pulses of periodically generated voltage.

[0227] It can be understood from the above description that various embodiments of the present invention are described in this specification for the purpose of illustration, and various changes can be made without departing from the scope and gist of the present invention. Therefore, it is not intended to limit the various embodiments disclosed in this specification, and the true scope and gist are represented by the attached claims.

[0228] Explanation of symbols

[0229] 1-plasma processing device, 10-chamber, 11-substrate supporting portion, 1110-base, 1111a-dielectric portion, R1-first region, R2-second region, 114a-first bias electrode, 114b-second bias electrode, 31-high frequency power supply, 41-first bias power supply, 42-second bias power supply, W-substrate, ER-edge ring.

Claims

1. A plasma processing device comprising: Cavity; The substrate support portion disposed in the chamber includes a base, a dielectric portion disposed on the base, a first bias electrode and a second bias electrode, wherein the dielectric portion includes: a first region configured to support a substrate mounted thereon; and a second region configured to surround the first region and support an edge ring mounted thereon, wherein: The first bias electrode is disposed in the first region, and the second bias electrode is disposed at least in the second region; and at least one bias power supply configured to supply an electrical bias for ion attraction to the first bias electrode and the second bias electrode, The shortest distance d between the placement position of the substrate in the first region and the first bias electrode W1 , the shortest distance d between the first bias electrode and the placement position of the edge ring in the second region WE , the shortest distance d between the second bias electrode and the placement position of the edge ring E1 , and the shortest distance d between the second bias electrode and the mounting position of the substrate EW Satisfying the following formula (A) and formula (B), d W1 ≤d WE (A), d E1 ≤d EW (B)。 2. The plasma processing apparatus according to claim 1, wherein: The plasma processing apparatus includes a first bias power supply electrically coupled to the first bias electrode, and a second bias power supply electrically coupled to the second bias electrode, as the at least one bias power supply.

3. The plasma processing apparatus according to claim 1, wherein: The plasma processing apparatus includes, as the at least one bias power supply, a single bias power supply electrically coupled to the first bias electrode via a first electrical path and electrically coupled to the second bias electrode via a second electrical path. At least one of the first electrical path and the second electrical path includes a variable impedance element.

4. The plasma processing apparatus according to claim 1, wherein: The base includes a first base disposed below the first area and a second base disposed below the second area. The first base and the second base are separated from each other by another dielectric portion provided therebetween.

5. The plasma processing apparatus according to claim 4, wherein: The plasma processing apparatus includes a first bias power supply electrically coupled to the first bias electrode, and a second bias power supply electrically coupled to the second bias electrode, as the at least one bias power supply.

6. The plasma processing apparatus according to claim 5 further comprises a first high-frequency power supply electrically coupled to the first pedestal, and a second high-frequency power supply electrically coupled to the first pedestal, as at least one high-frequency power supply configured to generate source RF power for plasma generation.

7. The plasma processing apparatus according to claim 4, further comprising a single high-frequency power source electrically connected to the first susceptor via a first electrical path and electrically coupled to the second susceptor via a second electrical path, as at least one high-frequency power source configured to generate source radio frequency power for plasma generation, At least one of the first electrical path and the second electrical path includes a variable impedance element.

8. The plasma processing apparatus according to claim 4, wherein: The plasma processing apparatus includes, as the at least one bias power supply, a single bias power supply electrically coupled to the first bias electrode via a first electrical path and electrically coupled to the second bias electrode via a second electrical path. At least one of the first electrical path and the second electrical path includes a variable impedance element, The plasma processing apparatus includes a single high-frequency power source electrically connected to the first susceptor via a third electrical path and electrically coupled to the second susceptor via a fourth electrical path, as at least one high-frequency power source configured to generate source radio frequency power for plasma generation, At least one of the third electrical path and the fourth electrical path includes a variable impedance element.

9. The plasma processing apparatus according to claim 1, wherein: A portion of the second bias electrode is provided in the first region so as to overlap with the first bias electrode when viewed in the vertical direction.

10. The plasma processing apparatus according to any one of claims 1 to 9, wherein: The electrical bias is bias radio frequency power, or pulses of periodically generated voltage.

11. The plasma processing apparatus according to any one of claims 1 to 9, wherein: The position of the upper surface of the second region in the height direction is lower than the position of the upper surface of the first region in the height direction. The position of the lower surface of the second region in the height direction is lower than the position of the lower surface of the first region in the height direction.

12. The plasma processing apparatus according to any one of claims 1 to 9, wherein: A portion of the second region is integrated with the base.

13. The plasma processing apparatus according to any one of claims 1 to 9, wherein: The first region and the second region are joined at their boundary.

14. The plasma processing apparatus according to any one of claims 1 to 9, wherein: The substrate support portion further includes an electrostatic electrode disposed in the second region, A distance between the first bias electrode and the lower surface of the first region in the height direction is equal to a distance between the electrostatic electrode and the lower surface of the first region in the height direction.

15. The plasma processing apparatus according to any one of claims 1 to 9, wherein: The shortest distance d W1 Than the shortest distance d E1 long.

16. The plasma processing apparatus according to any one of claims 1 to 9, wherein: The shortest distance d WE Than the shortest distance d EW long.

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