High-frequency module

Abstract

The purpose of the present invention is to suppress a decrease in characteristics while achieving a reduction in size. In a high-frequency module (100), a first chip (4) includes at least one of a plurality of first elastic wave resonators (14) of a first filter (1), and is disposed on a mounting substrate (9). The second chip (5) includes at least one of the plurality of second elastic wave resonators (24) of the second filter (2). The second chip (5) is disposed on the opposite side of the first chip (4) from the mounting substrate (9) side. The first chip (4) has a first main surface (41) on the second chip (5) side and a second main surface (42) on the mounting substrate (9) side. The second chip (5) has a third main surface (51) on the first chip (4) side and a fourth main surface (52) on the opposite side from the first chip (4) side. A first circuit element related to the first filter (1) is arranged on the second main surface (42) side of the first chip (4). A second circuit element related to the second filter (2) is arranged on the fourth main surface (52) side of the second chip (5).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module, and more particularly, to a high-frequency module including a plurality of chips. Background Art

[0002] Patent Document 1 discloses an elastic wave device (high frequency module) including a multilayer substrate (mounting substrate), a first elastic wave filter chip, a second elastic wave filter chip, a first inductor, and a second inductor. The first inductor is provided corresponding to the first elastic wave filter chip. The second inductor is provided corresponding to the second elastic wave filter chip.

[0003] The first elastic wave filter chip and the second elastic wave filter chip are flip-chip mounted on the multilayer substrate. In the elastic wave device, at least a portion of the first inductor is formed on the first elastic wave filter chip. In addition, in the elastic wave device, at least a portion of the second inductor is formed on the multilayer substrate.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-107509 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] In high-frequency modules, it is desired to suppress degradation of characteristics while achieving miniaturization.

[0009] An object of the present invention is to provide a high-frequency module capable of suppressing degradation of characteristics while achieving miniaturization.

[0010] Technical solutions to solve problems

[0011] A high-frequency module according to one embodiment of the present invention comprises a mounting substrate, a first chip, and a second chip. The mounting substrate has a main surface. The first chip includes at least one of a plurality of first elastic wave resonators of a first filter. The first chip is arranged on the mounting substrate. The second chip includes at least one of a plurality of second elastic wave resonators of a second filter. The second chip is arranged on the side of the first chip opposite to the mounting substrate side. The first chip has a first main surface on the second chip side and a second main surface on the mounting substrate side. The second chip has a third main surface on the first chip side and a fourth main surface on the side opposite to the first chip side. A first circuit element related to the first filter is arranged on the second main surface side of the first chip. A second circuit element related to the second filter is arranged on the fourth main surface side of the second chip.

[0012] A high-frequency module according to another embodiment of the present invention includes a mounting substrate, a first chip, a second chip, an electronic component, a wiring portion, and a resin layer. The mounting substrate has a main surface. The first chip includes at least one of a plurality of first elastic wave resonators of a first filter. The first chip is arranged on the main surface of the mounting substrate. The second chip includes at least one of a plurality of second elastic wave resonators of a second filter. The second chip is arranged on the side of the first chip opposite to the mounting substrate. The electronic component is arranged on the main surface of the mounting substrate. The electronic component includes a first electrode located on the main surface side of the mounting substrate and a second electrode located on the side opposite to the main surface side. The wiring portion connects the second filter and the electronic component. The first chip includes a first main surface on the second chip side and a second main surface on the mounting substrate side. The second chip includes a third main surface on the first chip side and a fourth main surface on the side opposite to the first chip side. Circuit elements related to the first filter are arranged on the second main surface of the first chip. The resin layer is arranged on the main surface of the mounting substrate. The resin layer covers at least a portion of the outer peripheral surface of the first chip, at least a portion of the outer peripheral surface of the second chip, and at least a portion of the outer peripheral surface of the electronic component. The wiring portion includes a conductor pattern portion. The conductor pattern portion is provided across the fourth main surface of the second chip, the main surface of the resin layer on the side opposite to the mounting substrate side, and the second electrode of the electronic component.

[0013] Effects of the Invention

[0014] The high-frequency module according to the above aspect of the present invention can suppress degradation of characteristics while achieving miniaturization. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a plan view of the high-frequency module according to the first embodiment.

[0016] Figure 2 The high frequency module shown above is Figure 1 X1-X1 line cross-sectional view.

[0017] Figure 3 The high frequency module shown above is Figure 1 X2-X2 line cross-sectional view.

[0018] Figure 4 A is a circuit diagram of the first filter in the high frequency module as above. Figure 4 B is a circuit diagram of the second filter in the high frequency module as above.

[0019] Figure 5This is a bottom view of the second chip in the high-frequency module according to the first modification of the first embodiment.

[0020] Figure 6 This is a circuit diagram of the main parts of a high-frequency module according to Modification 2 of Embodiment 1.

[0021] Figure 7 This is a cross-sectional view of a high-frequency module according to the second embodiment.

[0022] Figure 8 This is a top view of the main parts of the high-frequency module as above.

[0023] Fig. 9 This is a cross-sectional view of a high-frequency module according to the third embodiment.

[0024] Fig.10 This is a top view of the main parts of the high-frequency module as above.

[0025] Fig.11 It is a cross-sectional view of a high-frequency module according to a fourth embodiment.

[0026] Fig.12 This is a top view of the main parts of the high-frequency module as above.

[0027] Fig.13 This is a cross-sectional view of a high-frequency module according to the fifth embodiment.

[0028] Fig.14 It is a cross-sectional view of a high-frequency module according to the sixth embodiment.

[0029] Fig.15 This is a perspective view showing the main parts of a high-frequency module according to a seventh embodiment.

[0030] Fig.16 A is a top view of the main parts of the high-frequency module as above. Fig.16 B is a perspective side view of the main parts of the high-frequency module as above.

[0031] Fig.17 It is a top view of a high-frequency module according to the eighth embodiment.

[0032] Fig.18 The high frequency module shown above is Fig.17 X1-X1 line cross-sectional view.

[0033] Fig.19 It is a cross-sectional view of a high-frequency module according to the ninth embodiment.

[0034] Fig. 20 This is a cross-sectional view of a high-frequency module according to a tenth embodiment.

[0035] Fig.21This is a cross-sectional view of a high-frequency module according to the eleventh embodiment.

[0036] Fig. 22 This is a bottom view of the second chip in the high-frequency module as above.

[0037] Fig.23 This is a circuit diagram of the second filter in the high-frequency module as above.

[0038] Fig.24 This is a cross-sectional view of a high-frequency module according to Embodiment 12.

[0039] Fig.25 This is a bottom view of the second chip in the high-frequency module as above.

[0040] Fig.26 This is a circuit diagram of the second filter in the high-frequency module as above.

[0041] Fig. 27 This is a cross-sectional view of a high-frequency module according to Embodiment 13.

[0042] Fig.28 A is a circuit diagram of the first filter in the high frequency module as above. Fig.28 B is a circuit diagram of the second filter in the high frequency module as above.

[0043] Fig.29 This is a circuit diagram of the main parts of a high-frequency module according to a modified example of the thirteenth embodiment.

[0044] Fig.30 This is a cross-sectional view of a high-frequency module according to a fourteenth embodiment.

[0045] Fig.31 This is the main circuit diagram of the high-frequency module as above.

[0046] Fig.32 This is a cross-sectional view of a high-frequency module according to a fifteenth embodiment.

[0047] Fig.33 This is a circuit diagram of the second filter in the high-frequency module as above.

[0048] Fig.34 This is a plan view of a high-frequency module according to Embodiment 16.

[0049] Fig.35 This is a cross-sectional view of the high-frequency module as above.

[0050] Fig.36 This is the main circuit diagram of the high-frequency module as above.

[0051] Fig.37 This is a cross-sectional view of a high-frequency module according to Embodiment 17.

[0052] Fig.38 This is a cross-sectional view of a high-frequency module according to the eighteenth embodiment.

[0053] Fig.39 This is a cross-sectional view of a high-frequency module according to Embodiment 19.

[0054] Fig.40 This is the main circuit diagram of the high-frequency module as above.

[0055] Fig.41 This is a circuit diagram of the main parts of a high-frequency module according to a variation of the nineteenth embodiment. DETAILED DESCRIPTION

[0056] The drawings referred to in the following Embodiments 1 to 19 are schematic drawings, and the ratios of the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0057] (Implementation method 1)

[0058] The following is based on Figure 1 , Figure 2 , Figure 3 , Figure 4 A and Figure 4 B, the high frequency module 100 according to the first embodiment will be described.

[0059] (1) Summary

[0060] like Figure 2 as well as Figure 3 As shown, the high frequency module 100 according to the first embodiment includes a mounting substrate 9, a first chip 4, and a second chip 5. The mounting substrate 9 has a main surface 91. The first chip 4 includes a first filter 1 (see Figure 4 A) of a plurality of (e.g., eight) first elastic wave resonators 14. The first chip 4 is disposed on the main surface 91 of the mounting substrate 9. The second chip 5 includes a second filter 2 (see Figure 4B) a plurality of (for example, 8) second elastic wave resonators 24. The second chip 5 is arranged on the side of the first chip 4 opposite to the mounting substrate 9 side. That is, the high-frequency module 100 has a stacked structure ST1, which includes the first chip 4 and the second chip 5 stacked on the first chip 4. The first chip 4 has a first main surface 41 on the second chip 5 side and a second main surface 42 on the mounting substrate 9 side. The second chip 5 has a third main surface 51 on the first chip 4 side and a fourth main surface 52 on the opposite side to the first chip 4 side. The first filter 1 and the second filter 2 are filters that use different frequency bands as passbands. The first filter 1 and the second filter 2 are each a transmitting filter or a receiving filter or a transceiver filter. The passband of the first filter 1 corresponds to the first communication frequency band, and the passband of the second filter 2 corresponds to the second communication frequency band.

[0061] In addition, the high-frequency module 100 includes a plurality of external connection terminals 6, an insulating layer 7, a resin layer 8, and a metal electrode layer 10. Figure 1 , the insulating layer 7, the resin layer 8 and the metal electrode layer 10 are omitted. In addition, the high-frequency module 100 may also include a plurality of electronic components (not shown) arranged on the first main surface 91 of the mounting substrate 9 in addition to the first chip 4. The plurality of electronic components include, for example, a power amplifier, a low-noise amplifier, a switch, a controller, a circuit element of an output matching circuit (for example, a chip inductor, a chip capacitor), a circuit element of an input matching circuit (for example, a chip inductor, a chip capacitor), a multiplexer and a coupler. The output matching circuit is connected to the output terminal of the power amplifier. The input matching circuit is connected to the input terminal of the low-noise amplifier. The controller controls at least the power amplifier. In addition, the high-frequency module 100 also includes a plurality of filters other than the first filter 1 and the second filter 2. Each of the plurality of filters is, for example, a surface acoustic wave filter, a bulk acoustic wave filter or an LC filter. The circuit element of the output matching circuit is not limited to the electronic component arranged on the first main surface 91 of the mounting substrate 9, and may also be a circuit element built into the mounting substrate 9. Furthermore, the circuit element of the input matching circuit is not limited to the electronic component arranged on the first main surface 91 of the mounting substrate 9 , and may be a circuit element built into the mounting substrate 9 .

[0062] A plurality of external connection terminals 6 are arranged on a second main surface 92 on the opposite side of a main surface 91 (hereinafter also referred to as a first main surface 91) of the mounting substrate 9. The insulating layer 7 is arranged on the fourth main surface 52 of the second chip 5. The resin layer 8 is arranged on the first main surface 91 of the mounting substrate 9, and covers the outer peripheral surface 43 of the first chip 4, the outer peripheral surface 53 of the second chip 5, and the outer peripheral surface 73 of the insulating layer 7.

[0063] The high-frequency module 100 is used, for example, in a communication device. The communication device is, for example, a portable phone (e.g., a smart phone), but is not limited thereto, and may also be, for example, a wearable terminal (e.g., a smart watch), etc. The high-frequency module 100 is, for example, a module that can cope with 4G (4th generation mobile communication) standards, 5G (5th generation mobile communication) standards, etc. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 100 may also be, for example, a module that can cope with carrier aggregation and dual connectivity. Alternatively, the high-frequency module 100 may also be capable of coping with dual uplink carrier aggregation that uses two frequency bands simultaneously in the uplink.

[0064] The communication device includes a high-frequency module 100 and a signal processing circuit connected to the high-frequency module 100. The communication device also includes an antenna. The communication device also includes a circuit substrate (not shown) on which the high-frequency module 100 is mounted. The circuit substrate is, for example, a printed wiring board. The circuit substrate has a ground electrode to which a ground potential is provided. The high-frequency module 100 is, for example, configured to amplify a received signal input from the antenna and output it to the signal processing circuit. In addition, the high-frequency module 100 is, for example, configured to amplify a transmitted signal input from the signal processing circuit and output it to the antenna. The high-frequency module 100 is, for example, controlled by a signal processing circuit that the communication device includes.

[0065] (2) Details

[0066] Below, refer to Figure 1 to Figure 3 , Figure 4 A and Figure 4 B, the high frequency module 100 according to the first embodiment will be described in more detail.

[0067] (2.1) Circuit structure of the first filter and the second filter in the high-frequency module

[0068] like Figure 4 As shown in A of FIG. 1 , the first filter 1 has a pair of input / output terminals (a first input / output terminal 15 and a second input / output terminal 16) and a plurality of ( Figure 4In the example of A, there are eight first elastic wave resonators 14. The first filter 1 is, for example, a ladder filter. The eight first elastic wave resonators 14 include four series arm resonators (first series arm resonators) S11 to S14 and four parallel arm resonators (first parallel arm resonators) P11 to P14. The four series arm resonators S11 to S14 are provided on a signal path Ru1 (hereinafter also referred to as a first signal path Ru1) between the first input / output terminal 15 and the second input / output terminal 16. The four series arm resonators S11 to S14 are connected in series on the first signal path Ru1. In the first filter 1, on the first signal path Ru1, the series arm resonator S11, the series arm resonator S12, the series arm resonator S13, and the series arm resonator S14 are arranged in the order of the series arm resonator S11, the series arm resonator S12, the series arm resonator S13, and the series arm resonator S14 from the first input / output terminal 15 side. The parallel arm resonator P11 is provided on the parallel arm path Ru11 between the path between the series arm resonator S11 and the series arm resonator S12 in the first signal path Ru1 and the ground. The parallel arm resonator P12 is provided on the parallel arm path Ru12 between the path between the series arm resonator S12 and the series arm resonator S13 in the first signal path Ru1 and the ground. The parallel arm resonator P13 is provided on the parallel arm path Ru13 between the path between the series arm resonator S13 and the series arm resonator S14 in the first signal path Ru1 and the ground. The parallel arm resonator P14 is provided on the parallel arm path Ru14 between the path between the series arm resonator S14 and the second input / output terminal 16 in the first signal path Ru1 and the ground.

[0069] Furthermore, the first filter 1 includes an inductor L1 (hereinafter also referred to as the first inductor L1). The first inductor L1 is connected between the parallel arm resonator P14 and the ground (first ground). More specifically, the first inductor L1 is connected between the parallel arm resonator P14 closest to the second input / output terminal 16 among the plurality of parallel arm resonators P11 to P14 and the ground. The so-called "parallel arm resonator P14 closest to the second input / output terminal 16" is a parallel arm resonator P14 connected to the second input / output terminal 16 without passing through other first elastic wave resonators 14. In other words, the so-called "parallel arm resonator P14 closest to the second input / output terminal 16" is a parallel arm resonator P14 that is electrically closest to the second input / output terminal 16 regardless of the physical distance.

[0070] The first filter 1 has a plurality of circuit elements including eight first elastic wave resonators 14 , a wiring portion corresponding to the first signal path Ru1 , a plurality of wiring portions corresponding to the four parallel arm paths Ru11 to Ru14 , and a first inductor L1 .

[0071] like Figure 4 As shown in FIG. 1B , the second filter 2 has a pair of input / output terminals (a third input / output terminal 25 and a fourth input / output terminal 26) and a plurality of (eight in the illustrated example) second elastic wave resonators 24. The second filter 2 is, for example, a ladder filter. The eight second elastic wave resonators 24 include four series arm resonators (second series arm resonators) S21 to S24 and four parallel arm resonators (second parallel arm resonators) P21 to P24. The four series arm resonators S21 to S24 are provided on a signal path Ru2 (hereinafter also referred to as a second signal path Ru2) between the third input / output terminal 25 and the fourth input / output terminal 26. The four series arm resonators S21 to S24 are connected in series on the second signal path Ru2. In the second filter 2, on the second signal path Ru2, the series arm resonator S21, the series arm resonator S22, the series arm resonator S23, and the series arm resonator S24 are arranged in the order of the series arm resonator S21, the series arm resonator S22, the series arm resonator S23, and the series arm resonator S24 from the third input / output terminal 25 side. The parallel arm resonator P21 is provided on the parallel arm path Ru21 between the path between the series arm resonator S21 and the series arm resonator S22 in the second signal path Ru2 and the ground. The parallel arm resonator P22 is provided on the parallel arm path Ru22 between the path between the series arm resonator S22 and the series arm resonator S23 in the second signal path Ru2 and the ground. The parallel arm resonator P23 is provided on the parallel arm path Ru23 between the path between the series arm resonator S23 and the series arm resonator S24 in the second signal path Ru2 and the ground. The parallel arm resonator P24 is provided on the parallel arm path Ru24 between the path between the series arm resonator S24 and the fourth input / output terminal 26 in the second signal path Ru2 and the ground.

[0072] In addition, the second filter 2 has an inductor L2 (hereinafter, also referred to as the second inductor L2). The second inductor L2 is connected between the parallel arm resonator P24 and the ground (second ground). More specifically, the second inductor L2 is connected between the parallel arm resonator P24 closest to the fourth input-output terminal 26 among the plurality of parallel arm resonators P21 to P24 and the ground. The so-called "parallel arm resonator P24 closest to the fourth input-output terminal 26" is a parallel arm resonator P24 connected to the fourth input-output terminal 26 without passing through other second elastic wave resonators 24. In other words, the so-called "parallel arm resonator P24 closest to the fourth input-output terminal 26" is a parallel arm resonator P24 that is electrically closest to the fourth input-output terminal 26 regardless of the physical distance.

[0073] The second filter 2 has a plurality of circuit elements including eight second elastic wave resonators 24 , a wiring portion corresponding to the second signal path Ru2 , a plurality of wiring portions corresponding to the four parallel arm paths Ru21 to Ru24 , and a second inductor L2 .

[0074] (2.2) Structure of high-frequency module

[0075] Below, refer to Figure 1 to Figure 3 The structure of the high-frequency module 100 will be described.

[0076] (2.2.1) Mounting the base plate

[0077] like Figure 2 As shown, the mounting substrate 9 has a first main surface 91 and a second main surface 92 that are opposite to each other in the thickness direction D0 of the mounting substrate 9. Here, the so-called "opposite" does not mean physical opposition, but means geometric opposition. When viewed from the top of the thickness direction D0 of the mounting substrate 9, the outer edge of the mounting substrate 9 is, for example, a quadrilateral shape. In addition, the mounting substrate 9 has an outer peripheral surface. The outer peripheral surface of the mounting substrate 9, for example, includes four side surfaces that connect the outer edge of the first main surface 91 of the mounting substrate 9 and the outer edge of the second main surface 92, and does not include the first main surface 91 and the second main surface 92. The mounting substrate 9 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are stacked in the thickness direction D0 of the mounting substrate 9. The plurality of conductive layers are formed into a given pattern specified for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D0 of the mounting substrate 9. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground layer. In the high-frequency module 100, the ground layer of the mounting substrate 9 and the external ground terminals included in the plurality of external connection terminals 6 are electrically connected via via-hole conductors or the like included in the mounting substrate 9. The mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate is not limited to an LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.

[0078] In addition, the mounting substrate 9 is not limited to the LTCC substrate, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed into a given pattern. In the case where there are multiple insulating layers, the multiple insulating layers are formed into a given pattern specified for each layer. The conductive layer is formed into one or more given patterns different from the given pattern of the insulating layer. In the case where there are multiple conductive layers, the multiple conductive layers are formed into one or more given patterns specified for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first of the two surfaces of the multilayer structure facing each other in the thickness direction is the first main surface 91 of the mounting substrate 9, and the second surface is the second main surface 92 of the mounting substrate 9. The wiring structure may also be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or may be a substrate composed of multiple layers.

[0079] The first principal surface 91 and the second principal surface 92 of the mounting substrate 9 are separated in the thickness direction D0 of the mounting substrate 9 and intersect with the thickness direction D0 of the mounting substrate 9. The first principal surface 91 in the mounting substrate 9 is, for example, orthogonal to the thickness direction D0 of the mounting substrate 9, but, for example, it may also include the side surface of the conductor part as a surface not orthogonal to the thickness direction D0. In addition, the second principal surface 92 in the mounting substrate 9 is, for example, orthogonal to the thickness direction D0 of the mounting substrate 9, but, for example, it may also include the side surface of the conductor part as a surface not orthogonal to the thickness direction D0. In addition, the first principal surface 91 and the second principal surface 92 of the mounting substrate 9 may also be formed with fine concave and convex parts or concave parts or convex parts. For example, in the case where a concave part is formed on the first principal surface 91 of the mounting substrate 9, the inner surface of the concave part is included in the first principal surface 91.

[0080] (2.2.2) Chip 1

[0081] like Figure 2 as well as Figure 3 As shown, the first chip 4 is arranged on the first main surface 91 of the mounting substrate 9. The so-called "the first chip 4 is arranged on the first main surface 91 of the mounting substrate 9" includes the case where the first chip 4 is mounted on the first main surface 91 of the mounting substrate 9 (the case of mechanical connection) and the case where the first chip 4 is electrically connected to the mounting substrate 9 (the appropriate conductor portion). The first chip 4 has a plurality of (e.g., 8) first terminal electrodes T1 connected to the mounting substrate 9 and a plurality of (e.g., 4) second terminal electrodes T2 connected to the second chip 5. The eight first terminal electrodes T1 include, for example, the first input / output terminal 15 of the first filter 1 (see Figure 4 A), the second input and output terminal 16 (refer to Figure 4 A), 1st ground terminal 17 (refer to Figure 4 A) and the first connection terminal 18 (refer to Figure 4A). In addition, the eight first terminal electrodes T1 include a first terminal, a second terminal, and a third terminal connected to the third input / output terminal 25, the fourth input / output terminal 26, and the second ground terminal 27 of the second filter 2, respectively. The first connection terminal 18 is a terminal to which one end of the first inductor L1 is connected. The other end of the first inductor L1 is connected via a terminal 19 (see Figure 4 In the first chip 4, the eight first terminal electrodes T1 are connected to the corresponding eight conductor portions 96 (see FIG. 1 ) among the plurality of conductor portions of the mounting substrate 9 through the bonding portion 180. Figure 1 The material of the joint portion 180 is, for example, solder.

[0082] When viewed from above in the thickness direction D0 of the mounting substrate 9, the outer edge 40 of the first chip 4 is, for example, in a quadrilateral shape. The first chip 4 has a plurality of (eight) first elastic wave resonators 14 of the first filter 1. The first filter 1 is a surface acoustic wave filter using surface acoustic waves. The first chip 4 includes a first substrate 45 and a plurality of first functional electrodes 140, which are arranged on the first substrate 45 and constitute a part of each of the plurality of first elastic wave resonators 14. In the high-frequency module 100, each of the plurality of first functional electrodes 140 is an IDT (Interdigital Transducer) electrode. Therefore, each of the plurality of first elastic wave resonators 14 is a SAW (Surface Acoustic Wave) resonator.

[0083] The first substrate 45 includes a first piezoelectric layer 48 and a first high-acoustic-velocity member 46. The first high-acoustic-velocity member 46 is a high-acoustic-velocity support substrate located on the opposite side of the first functional electrode 140 across the first piezoelectric layer 48. In the first high-acoustic-velocity member 46, the acoustic velocity of the body wave propagating in the first high-acoustic-velocity member 46 is higher than the acoustic velocity of the elastic wave propagating in the first piezoelectric layer 48. Here, the body wave propagating in the first high-acoustic-velocity member 46 is a body wave having the lowest acoustic velocity among a plurality of body waves propagating in the first high-acoustic-velocity member 46. The first substrate 45 further includes a first low-acoustic-velocity film 47 interposed between the first high-acoustic-velocity member 46 and the first piezoelectric layer 48. The first low-acoustic-velocity film 47 is a film that makes the acoustic velocity of the body wave propagating in the first low-acoustic-velocity film 47 lower than the acoustic velocity of the body wave propagating in the first piezoelectric layer 48.

[0084] The material of the first piezoelectric layer 48 includes, for example, lithium tantalate or lithium niobate.

[0085] The material of the first high-acoustic velocity member 46 includes, for example, at least one material selected from the group consisting of silicon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, sapphire, lithium tantalate, lithium niobate, quartz, alumina, zirconium oxide, cordierite, mullite, steatite, forsterite, magnesium oxide, and diamond. The first high-acoustic velocity member 46 is, for example, a silicon substrate.

[0086] The material of the first low acoustic velocity film 47 includes, for example, silicon oxide. The material of the first low acoustic velocity film 47 is not limited to silicon oxide. The material of the first low acoustic velocity film 47 may be, for example, glass, silicon oxynitride, tantalum oxide, a compound to which fluorine, carbon or boron is added to silicon oxide, or a material containing the above materials as main components.

[0087] In the first chip 4, the first substrate 45 has a first main surface 451 and a second main surface 452. In the first chip 4, a plurality of first functional electrodes 140 are arranged on the first main surface 451 of the first substrate 45. In the first chip 4, a plurality of first terminal electrodes T1 are arranged on the second main surface 452 of the first substrate 45. That is, in the first chip 4, the first input / output terminal 15 (see Figure 4 A), the second input and output terminal 16 (refer to Figure 4 A), 1st ground terminal 17 (refer to Figure 4 A) and the first connection terminal 18 (refer to Figure 4 A) is arranged on the second main surface 452 of the first substrate 45. In addition, in the first chip 4, the first terminal connected to the third input-output terminal 25 of the second filter 2, the second terminal connected to the fourth input-output terminal 26, and the third terminal connected to the second ground terminal 27 are arranged on the second main surface 452 of the first substrate 45.

[0088] The first chip 4 has a plurality of through-wiring portions 49. The plurality of through-wiring portions 49 include a first through-wiring portion, a second through-wiring portion, a first ground through-wiring portion, and a first connection through-wiring portion. For example, when the material of the first high-acoustic-velocity member 46 is silicon, the first chip 4 may also include an insulating film between the plurality of through-wiring portions 49 and the first substrate 45. The material of the insulating film includes, for example, silicon oxide. In the first chip 4, as a wiring portion between the first input-output terminal 15 and the series-arm resonator S11, a first through-wiring portion connected to the first input-output terminal 15 and a first wiring portion between the first through-wiring portion and the series-arm resonator S11 are included. The first through-wiring portion penetrates in the thickness direction of the first substrate 45. The first wiring portion is arranged on the first main surface 451 of the first substrate 45. A portion of the first wiring portion overlaps with the first through-wiring portion. In addition, in the first chip 4, as a wiring portion between the second input / output terminal 16 and the series arm resonator S14, a second through-wiring portion connected to the second input / output terminal 16 and a second wiring portion between the second through-wiring portion and the series arm resonator S14 are included. The second through-wiring portion penetrates in the thickness direction of the first substrate 45. The second wiring portion is arranged on the first main surface 451 of the first substrate 45. A part of the second wiring portion overlaps with the second through-wiring portion. In addition, in the first chip 4, as a wiring portion between the first ground terminal 17 and the connection point of the three parallel arm resonators P11, P12, and P13, a first ground through-wiring portion connected to the first ground terminal 17 and a first ground wiring portion between the first ground through-wiring portion and the connection point of the three parallel arm resonators P11, P12, and P13 are included. The first ground through-wiring portion penetrates in the thickness direction of the first substrate 45. The first ground wiring portion is arranged on the first main surface 451 of the first substrate 45. A portion of the first ground wiring portion overlaps with the first ground through wiring portion. In addition, in the first chip 4, as a wiring portion between the first connection terminal 18 and the parallel arm resonator P14, a first connection through wiring portion connected to the first connection terminal 18 and a first connection wiring portion between the first connection through wiring portion and the parallel arm resonator P14 are included. The first connection through wiring portion penetrates in the thickness direction of the first substrate 45. The first connection wiring portion is arranged on the first main surface 451 of the first substrate 45. A portion of the first connection wiring portion overlaps with the first connection through wiring portion.

[0089] (2.2.3) Second chip

[0090] like Figure 2 as well as Figure 3 As shown, the second chip 5 is arranged on the side of the first chip 4 opposite to the mounting substrate 9 side. In other words, the second chip 5 is stacked on the first chip 4. More specifically, the second chip 5 is stacked on the first main surface 41 of the first chip 4.

[0091] When viewed from above in the thickness direction D0 of the mounting substrate 9, the outer edge 50 of the second chip 5 is, for example, a quadrilateral shape. The second chip 5 has a plurality of (eight) second elastic wave resonators 24 of the second filter 2. The second filter 2 is a surface acoustic wave filter using surface acoustic waves. The second chip 5 includes a second substrate 55 and a plurality of second functional electrodes 240, which are provided on the second substrate 55 and constitute a part of each of the plurality of second elastic wave resonators 24. In the high-frequency module 100, each of the plurality of second functional electrodes 240 is an IDT electrode. Therefore, each of the plurality of second elastic wave resonators 24 is a SAW resonator.

[0092] The second substrate 55 includes a second piezoelectric layer 58 and a second high-acoustic-velocity member 56. The second high-acoustic-velocity member 56 is a high-acoustic-velocity support substrate located on the opposite side of the second functional electrode 240 across the second piezoelectric layer 58. In the second high-acoustic-velocity member 56, the acoustic velocity of the body wave propagating in the second high-acoustic-velocity member 56 is higher than the acoustic velocity of the elastic wave propagating in the second piezoelectric layer 58. Here, the body wave propagating in the second high-acoustic-velocity member 56 is the body wave with the lowest acoustic velocity among the plurality of body waves propagating in the second high-acoustic-velocity member 56. The second substrate 55 further includes a second low-acoustic-velocity film 57 interposed between the second high-acoustic-velocity member 56 and the second piezoelectric layer 58. The second low-acoustic-velocity film 57 is a film that makes the acoustic velocity of the body wave propagating in the second low-acoustic-velocity film 57 lower than the acoustic velocity of the body wave propagating in the second piezoelectric layer 58.

[0093] The material of the second piezoelectric layer 58 is the same as that of the first piezoelectric layer 48. The material of the second high-acoustic-velocity member 56 is the same as that of the first high-acoustic-velocity member 46. The second high-acoustic-velocity member 56 is, for example, a silicon substrate. The material of the second low-acoustic-velocity film 57 is the same as that of the first low-acoustic-velocity film 47.

[0094] In the second chip 5, the second substrate 55 has a third main surface 551 and a fourth main surface 552. The second chip 5 has a plurality of (for example, four) third terminal electrodes T3 arranged on the third main surface 551 of the second substrate 55 and two fourth terminal electrodes T4 arranged on the fourth main surface 552 of the second substrate 55. The four third terminal electrodes T3 include the third input / output terminal 25, the fourth input / output terminal 26, the second ground terminal 27 and the second connection terminal 28 of the second filter. The four third terminal electrodes T3 are connected to the first chip 4. The second connection terminal 28 is connected to the second inductor L2 via the through wiring portion 291 and the fourth terminal electrode T4. The two fourth terminal electrodes T4 include a terminal connected to the second connection terminal 28 and a connection terminal 29 connected to the metal electrode layer 10. For example, when the material of the second high-acoustic-velocity member 56 is silicon, the second chip 5 may also have an insulating film interposed between the through wiring portion 291 and the second substrate 55. The material of the insulating film includes, for example, silicon oxide. The second inductor L2 is connected to the metal electrode layer 10 via a via conductor 250 that penetrates the insulating layer 7 .

[0095] (2.2.4) Stacked structure including first chip and second chip

[0096] In the stacked structure ST1, when viewed from the thickness direction D0 of the mounting substrate 9, the outer edge 40 of the first chip 4 and the outer edge 50 of the second chip 5 have the same shape. Figure 2 as well as Figure 3As shown, the stacked structure ST1 has a hollow space 134 formed between the first chip 4 and the second chip 5. In the stacked structure ST1, for example, the first chip 4 has a frame-shaped (for example, a rectangular frame-shaped) first bonding metal layer 400 arranged on the first main surface 451 of the first substrate 45, and the second chip 5 has a frame-shaped (for example, a rectangular frame-shaped) second bonding metal layer 500 arranged on the third main surface 551 of the second substrate 55. When viewed from above in the thickness direction D0 of the mounting substrate 9, the first bonding metal layer 400 and the second bonding metal layer 500 overlap each other. In the stacked structure ST1, the first bonding metal layer 400 and the second bonding metal layer 500 are bonded, thereby forming a hollow space 134 between the first substrate 45 of the first chip 4 and the second substrate 55 of the second chip 5. That is, in the stacked structure ST1, the spacer portion including the first bonding metal layer 400 and the second bonding metal layer 500 is between the first substrate 45 and the second substrate 55. The materials of the first bonding metal layer 400 and the second bonding metal layer 500 include metals such as Au, Al or Cu. In the spacer portion, the first bonding metal layer 400 and the second bonding metal layer 500 are directly bonded, but are not limited to this. For example, the first bonding metal layer 400 and the second bonding metal layer 500 can also be bonded by solder. In addition, in the stacked structure ST1, the material of the spacer portion is not limited to the case where the material is metal, for example, it can also be resin.

[0097] In the first chip 4 , the first functional electrode 140 is located closer to the second chip 5 than the first substrate 45 . In the second chip 5 , the second functional electrode 240 is located closer to the first chip 4 than the second substrate 55 .

[0098] In the stacked structure ST1 , the third input / output terminal 25 , the fourth input / output terminal 26 , and the second ground terminal 27 of the second filter 2 are connected to the first terminal, the second terminal, and the third terminal of the first chip 4 , respectively.

[0099] (2.2.5) First inductor

[0100] In the high frequency module 100 according to the first embodiment, Figure 1 as well as Figure 3As shown, the first inductor L1 as the first circuit element associated with the first filter 1 is arranged on the second main surface 42 side of the first chip 4. The so-called "first circuit element associated with the first filter 1" means a circuit element included in the first filter 1, or a wiring portion included in the first filter 1, or a circuit element directly connected to the first filter 1. The so-called "circuit element directly connected to the first filter 1" means a circuit element connected to the first filter 1 without passing through other circuit elements, for example, an inductor or a capacitor of a matching circuit connected to the first filter 1. In the high-frequency module 100 involved in the first embodiment, the "first circuit element associated with the first filter 1" is the first inductor L1, which is a circuit element included in the first filter 1.

[0101] In the high-frequency module 100 according to the first embodiment, the first inductor L1 is arranged on the mounting substrate 9 on the second main surface 42 side of the first chip 4. The first inductor L1 is composed of a planar spiral conductor pattern portion arranged on the first main surface 91 of the mounting substrate 9. The first inductor L1 overlaps with the first chip 4 in the thickness direction D0 of the mounting substrate 9. More specifically, in the thickness direction D0 of the mounting substrate 9, the entire first inductor L1 overlaps with a portion of the first chip 4, but the present invention is not limited thereto, as long as at least a portion of the first inductor L1 overlaps with the first chip 4. The first inductor L1 is separated from the second main surface 42 of the first chip 4 in the thickness direction D0 of the mounting substrate 9.

[0102] (2.2.6) Second inductor

[0103] In the high frequency module 100 according to the first embodiment, Figure 1 as well as Figure 2 As shown, the second inductor L2 as the second circuit element related to the second filter 2 is arranged on the fourth main surface 52 of the second chip 5. The so-called "second circuit element related to the second filter 2" means a circuit element included in the second filter 2, or a wiring portion included in the second filter 2, or a circuit element directly connected to the second filter 2. The so-called "circuit element directly connected to the second filter 2" means a circuit element connected to the second filter 2 without passing through other circuit elements, for example, an inductor or a capacitor of a matching circuit connected to the second filter 2. In the high-frequency module 100 involved in the first embodiment, the "second circuit element related to the second filter 2" is the second inductor L2, which is a circuit element included in the second filter 2.

[0104] The second inductor L2 overlaps with the second chip 5 in the thickness direction D0 of the mounting substrate 9. More specifically, the entire second inductor L2 overlaps with a portion of the second chip 5 in the thickness direction D0 of the mounting substrate 9.

[0105] (2.2.7) External connection terminals

[0106] A plurality of external connection terminals 6 (see Figure 1 as well as Figure 2 ) is arranged on the second main surface 92 of the mounting substrate 9. The so-called "the external connection terminal 6 is arranged on the second main surface 92 of the mounting substrate 9" includes the case where the external connection terminal 6 is mechanically connected to the second main surface 92 of the mounting substrate 9 and the case where the external connection terminal 6 is electrically connected to (the appropriate conductor portion of) the mounting substrate 9.

[0107] The plurality of external connection terminals 6 include an antenna terminal, a signal input terminal, a signal output terminal, and a plurality of external ground terminals. The plurality of external ground terminals are electrically connected to a ground layer of the mounting substrate 9. The ground layer is a circuit ground of the high frequency module 100.

[0108] The material of the plurality of external connection terminals 6 is, for example, metal (e.g., copper, copper alloy, etc.). The plurality of external connection terminals 6 are not components of the mounting substrate 9, but may be components of the mounting substrate 9. When viewed from above in the thickness direction D0 of the mounting substrate 9, the plurality of external connection terminals 6 are each in a quadrilateral shape, but are not limited thereto, and may be, for example, in a circular shape. The thickness of each of the plurality of external connection terminals 6 is thinner than the thickness of the mounting substrate 9.

[0109] (2.2.8) Insulation layer

[0110] like Figure 2 as well as Figure 3 As shown, the insulating layer 7 is arranged on the fourth main surface 52 of the second chip 5. The insulating layer 7 covers the fourth main surface 52 of the second chip 5 and the second inductor L2. The material of the insulating layer 7 includes, for example, polyimide. In addition, the material of the insulating layer 7 is not limited to polyimide, and for example, it can include polyimide resin, phenolic resin, epoxy resin, polytetrafluoroethylene or PET (polyethylene terephthalate).

[0111] The outer edge 70 of the insulating layer 7 is, for example, a quadrangular shape when viewed from above in the thickness direction D0 of the mounting substrate 9. The outer edge 70 of the insulating layer 7 is the same shape as the outer edge 50 of the second chip 5 when viewed from above in the thickness direction D0 of the mounting substrate 9.

[0112] (2.2.9) Resin layer

[0113] like Figure 2 as well as Figure 3 As shown, the resin layer 8 is disposed on the first main surface 91 of the mounting substrate 9. The resin layer 8 contains a resin (for example, an epoxy resin). The resin layer 8 may contain a filler in addition to the resin. The resin layer 8 has electrical insulation properties.

[0114] The resin layer 8 covers the outer peripheral surface 43 of the first chip 4, the outer peripheral surface 53 of the second chip 5, and the outer peripheral surface 73 of the insulating layer 7, which are arranged on the first main surface 91 of the mounting substrate 9. The outer peripheral surface 43 of the first chip 4, for example, includes four side surfaces connecting the first main surface 41 and the second main surface 42 of the first chip 4, and does not include the first main surface 41 and the second main surface 42. The outer peripheral surface 53 of the second chip 5, for example, includes four side surfaces connecting the third main surface 51 and the fourth main surface 52 of the second chip 5, and does not include the third main surface 51 and the fourth main surface 52.

[0115] (2.2.10) Metal electrode layer

[0116] like Figure 2 as well as Figure 3 As shown, the metal electrode layer 10 covers a portion of the insulating layer 7 and a portion of the resin layer 8. More specifically, the metal electrode layer 10 covers a main surface 71 of the insulating layer 7 on the side opposite to the second chip 5, a main surface 81 of the resin layer 8 on the side opposite to the mounting substrate 9, an outer peripheral surface of the resin layer 8, and an outer peripheral surface of the mounting substrate 9.

[0117] The metal electrode layer 10 has conductivity. The metal electrode layer 10 is, for example, a shielding layer provided for the purpose of electromagnetic shielding inside and outside the high-frequency module 100. The metal electrode layer 10 contacts at least a portion of the outer peripheral surface of the ground layer of the mounting substrate 9. Thus, the potential of the metal electrode layer 10 can be made the same as the potential of the ground layer. The metal electrode layer 10 has a multilayer structure in which a plurality of metal layers are stacked, but is not limited thereto, and may also be a single metal layer. The metal layer includes one or more metals. In the case where the metal electrode layer 10 has a multilayer structure in which a plurality of metal layers are stacked, for example, it includes a first metal layer (for example, a first stainless steel layer), a second metal layer (for example, a Cu layer) on the first metal layer, and a third metal layer (for example, a second stainless steel layer) on the second metal layer. The materials of each of the first stainless steel layer and the second stainless steel layer are alloys containing Fe, Ni, and Cr. In addition, in the case where the metal electrode layer 10 is a single metal layer, for example, it is a Cu layer.

[0118] (2.2.11) Layout of the first and second inductors

[0119] In the high frequency module 100, as Figure 1As shown, when viewed from above in the thickness direction D0 of the mounting substrate 9, the first inductor L1 and the second inductor L2 do not overlap each other. The phrase "when viewed from above in the thickness direction D0 of the mounting substrate 9, the first inductor L1 and the second inductor L2 do not overlap each other" means that when viewed from above in the thickness direction D0 of the mounting substrate 9, the first inductor L1 and the second inductor L2 do not overlap each other at all, that is, they do not overlap each other even partially. Therefore, in the high-frequency module 100 according to the first embodiment, the first filter 1 (see Figure 2 as well as Figure 3 ) of the first inductor L1 and the second filter 2 (refer to Figure 2 as well as Figure 3 )'s second inductor L2 does not overlap at all.

[0120] (2.3) Manufacturing method of high-frequency module

[0121] The manufacturing method of the high-frequency module 100 includes a preliminary process, a mounting process, a molding process, a grinding process, a dicing process, and a metal electrode layer forming process.

[0122] In the previous process, the first wafer which will be the basis of the plurality of first chips 4 and the second wafer which will be the basis of the plurality of second chips 5 are bonded, and then a plurality of first structures are formed by techniques such as grinding, etching, plating, photolithography, evaporation, stripping, laser processing, coating, cutting, etc. Each of the plurality of first structures includes a stacked structure ST1 and a protective resin layer which will be the basis of the insulating layer 7. In the mounting process, the plurality of first structures are arranged on a base substrate which will be the basis of the plurality of mounting substrates 9. In the molding process, a molding layer which will be the basis of the plurality of resin layers 8 is formed. The molding layer covers the plurality of first structures arranged on the main surface of the base substrate. In the grinding process, the molding layer and the protective resin layer are ground to form the resin layer 8 and the insulating layer 7. Thus, the second structure which will be the basis of the plurality of high-frequency modules 100 is formed. In the cutting process, the second structure which will be the basis of the plurality of high-frequency modules 100 is divided into respective third structures corresponding to the plurality of high-frequency modules 100. In the metal electrode layer forming step, metal electrode layer 10 is formed by sputtering, for example, to cover principal surface 81 and peripheral surface of resin layer 8 in the third structure, principal surface 71 of insulating layer 7 , and peripheral surface of mounting substrate 9 .

[0123] (3) Effect

[0124] A high-frequency module 100 according to the first embodiment includes a mounting substrate 9, a first chip 4, and a second chip 5. The mounting substrate 9 has a main surface 91. The first chip 4 includes a plurality of first elastic wave resonators 14 of the first filter 1. The first chip 4 is arranged on the main surface 91 of the mounting substrate 9. The second chip 5 includes a plurality of second elastic wave resonators 24 of the second filter 2. The second chip 5 is arranged on the side of the first chip 4 opposite to the mounting substrate 9 side. The first chip 4 has a first main surface 41 on the second chip 5 side and a second main surface 42 on the mounting substrate 9 side. The second chip 5 has a third main surface 51 on the first chip 4 side and a fourth main surface 52 on the side opposite to the first chip 4 side. The first inductor L1 as a first circuit element related to the first filter 1 is arranged on the second main surface 42 side of the first chip 4. The second inductor L2 as a second circuit element related to the second filter 2 is arranged on the fourth main surface 52 side of the second chip 5.

[0125] According to the high-frequency module 100 involved in the first embodiment, it is possible to suppress the degradation of characteristics while pursuing miniaturization. More specifically, according to the high-frequency module 100, the second chip 5 is arranged on the side opposite to the mounting substrate 9 side of the first chip 4, thereby achieving miniaturization. In addition, according to the high-frequency module 100, the wiring length between the second inductor L2 and the second elastic wave resonator 24 connected to the second inductor L2 in the second chip 5 can be shortened, and the degradation of the characteristics of the second filter 2 can be suppressed. In addition, according to the high-frequency module 100, the first inductor L1 related to the first filter 1 is arranged on the second main surface 42 side of the first chip 4, and the second inductor L2 included in the second filter 2 is arranged on the fourth main surface 52 of the second chip 5, thereby improving the isolation between the first inductor L1 and the second inductor L2. As a result, the high-frequency module 100 can suppress the degradation of the characteristics of each of the first filter 1 and the second filter 2.

[0126] Furthermore, in the high-frequency module 100 , the first inductor L1 is provided on the mounting substrate 9 . Thus, compared with the case where the first inductor L1 is arranged on the second main surface 42 of the first chip 4 , the high-frequency module 100 can further improve the isolation between the first inductor L1 and the second inductor L2 .

[0127] In the high frequency module 100, the metal electrode layer 10 covers at least a portion of the resin layer 8, and the second inductor L2 is connected to the second ground via the metal electrode layer 10. Thus, in the high frequency module 100, parasitic inductance between the second inductor L2 and the second ground can be reduced.

[0128] (Variation 1 of Embodiment 1)

[0129] In the high frequency module 100 according to the first modification of the first embodiment, the stacked structure ST1 (see Figure 2 ) in which the second chip 5 has Figure 5 The second chip 5 is shown.

[0130] In the second chip 5 in the modification example 1, as Figure 5 As shown, in the first direction D1, the series arm resonator S21, the series arm resonator S22, the series arm resonator S23 and the series arm resonator S24 are arranged in the order of the series arm resonator S21, the series arm resonator S22, the series arm resonator S23 and the series arm resonator S24. The first direction D1 is parallel to the mounting substrate 9 (see Figure 2 ) is orthogonal to the thickness direction D0 of the second chip 5. In addition, in the second direction D1, the parallel arm resonator P21, the parallel arm resonator P22, the parallel arm resonator P23 and the parallel arm resonator P24 are arranged in the order of parallel arm resonator P21, parallel arm resonator P22, parallel arm resonator P23 and parallel arm resonator P24. The parallel arm resonator P21, the parallel arm resonator P22, the parallel arm resonator P23 and the parallel arm resonator P24 are separated from the series arm resonator S21, the series arm resonator S22, the series arm resonator S23 and the series arm resonator S24 in the second direction D2 orthogonal to the first direction D1. In addition, the second chip 5 includes a plurality of wiring portions W20 arranged on the third main surface 551 of the second substrate 55 and a second bonding metal layer 500. In Figure 5 In the figure, dotted hatching is added to the functional electrodes 240 of the series arm resonators S21 to S24 and the parallel arm resonators P21 to P24, the wiring portions W20, the third input / output terminal 25, the fourth input / output terminal 26, the second ground terminal 27, and the second connection terminal 28. These hatchings do not represent cross sections, but are added for easy viewing of the drawings.

[0131] In the high-frequency module 100 according to the first modification of the first embodiment, when viewed from above in the thickness direction D0 of the mounting substrate 9, the second inductor L2 of the second filter 2 and at least one of the plurality of (four) parallel arm resonators P21 to P24 of the second filter 2 (in the Figure 4 In the example of the present invention, the second inductor L2 of the second filter 2 overlaps the parallel arm resonators P22 to P24 (three in the example), and does not overlap any of the plurality of (four) series arm resonators S21 to S24. Thus, in the high-frequency module 100 according to the first modification, the attenuation characteristics of the second filter 2 can be improved, compared with a case where the second inductor L2 of the second filter 2 overlaps at least one of the plurality of series arm resonators S21 to S24 when viewed from above in the thickness direction D0 of the mounting substrate 9.

[0132] (Variation 2 of Embodiment 1)

[0133] The high frequency module 100 according to the second modification of the first embodiment is different from the high frequency module 100 according to the first embodiment in that Figure 6 As shown, the third input / output terminal 25 of the second filter 2 is connected to the first input / output terminal 15 of the first filter 1 , thereby providing a duplexer Dp1 including the first filter 1 and the second filter 2 .

[0134] (Implementation method 2)

[0135] Reference Figure 7 as well as Figure 8 , a high-frequency module 100a according to the second embodiment will be described. The high-frequency module 100a according to the second embodiment is different from the high-frequency module 100 according to the first embodiment (see Figure 2 ) The same components are marked with the same reference numerals and the description thereof is omitted. Figure 8 In the figure, the metal electrode layer 10 and the insulating layer 7 are omitted. Figure 7 is with Figure 8 The cross-sectional view corresponding to the X1-X1 line section.

[0136] (1) Structure

[0137] The high-frequency module 100a according to the second embodiment is different from the high-frequency module 100 according to the first embodiment in that the second inductor L2 overlaps the first inductor L1 when viewed from above in the thickness direction D0 of the mounting substrate 9. The high-frequency module 100a according to the second embodiment is different from the high-frequency module 100 according to the first embodiment in that a shielding electrode 135 is further provided.

[0138] In the high frequency module 100a according to the second embodiment, Figure 8 As shown, a part of the second inductor L2 overlaps a part of the first inductor L1 when viewed from above in the thickness direction D0 of the mounting substrate 9. In the high-frequency module 100a, a part of the second inductor L2 may overlap the entire first inductor L1, or the entire second inductor L2 may overlap a part of the first inductor L1, or the entire second inductor L2 may overlap the entire first inductor L1.

[0139] like Figure 7 As shown, the shielding electrode 135 is arranged between the first chip 4 and the second chip 5. More specifically, the shielding electrode 135 is arranged in a hollow space 134 surrounded by the first substrate 45 of the first chip 4, the second substrate 55 of the second chip 5, and the spacer portion between the first substrate 45 and the second substrate 55. The spacer portion includes a first bonding metal layer 400 and a second bonding metal layer 500.

[0140] The shielding electrode 135 is disposed between at least one of the plurality of first functional electrodes 140 and at least one of the plurality of second functional electrodes 240 in the thickness direction D0 of the mounting substrate 9. Therefore, the shielding electrode 135 overlaps with at least one of the plurality of first functional electrodes 140 and at least one of the plurality of second functional electrodes 240 in the thickness direction D0 of the mounting substrate 9. The mounting substrate 9 further includes a ground electrode (not shown) to which the shielding electrode 135 is connected.

[0141] The shielding electrode 135 includes a first shielding portion 1351 separated from the second chip 5 in the thickness direction D0 of the mounting substrate 9 and a second shielding portion 1352 connecting the second chip 5 and the first shielding portion 1351. The first shielding portion 1351 and the second shielding portion 1352 are integral. The material of the shielding electrode 135 includes metal. The high-frequency module 100a includes a cavity 138 formed between the shielding electrode 135 and the third main surface 551 of the second substrate 55 and the at least one second functional electrode 240. The cavity 138 can be formed, for example, by using a sacrificial layer etching technique.

[0142] The first inductor L1 and the second inductor L2 overlap with the shield electrode 135 when viewed from above in the thickness direction D0 of the mounting substrate 9. In the high-frequency module 100a, the entire first inductor L1 overlaps with a portion of the shield electrode 135 when viewed from above in the thickness direction D0 of the mounting substrate 9. In the high-frequency module 100a, a portion of the first inductor L1 may overlap with a portion of the shield electrode 135 when viewed from above in the thickness direction D0 of the mounting substrate 9. In the high-frequency module 100a, the entire second inductor L2 overlaps with a portion of the shield electrode 135 when viewed from above in the thickness direction D0 of the mounting substrate 9. In the high-frequency module 100a, a portion of the second inductor L2 may overlap with a portion of the shield electrode 135 when viewed from above in the thickness direction D0 of the mounting substrate 9.

[0143] (2) Effect

[0144] The high-frequency module 100a according to the second embodiment includes a shielding electrode 135 disposed in the hollow space 134 between the first chip 4 and the second chip 5. In addition, in the high-frequency module 100a according to the second embodiment, the first inductor L1 and the second inductor L2 overlap with the shielding electrode 135 when viewed from above in the thickness direction D0 of the mounting substrate 9. Thus, the high-frequency module 100a according to the second embodiment can improve the isolation between the first inductor L1 and the second inductor L2.

[0145] (Implementation method 3)

[0146] Reference Fig. 9 as well as Fig.10, a high-frequency module 100b according to the third embodiment will be described. The high-frequency module 100b according to the third embodiment is different from the high-frequency module 100 according to the first embodiment (see Figure 1 to Figure 3 ) The same components are marked with the same reference numerals and the description thereof is omitted. Fig.10 In the figure, the metal electrode layer 10, the insulating layer 7 and the resin layer 8 are omitted. Fig. 9 is with Fig.10 The cross-sectional view corresponding to the X1-X1 line section.

[0147] (1) Structure

[0148] The high-frequency module 100 b according to the third embodiment is different from the high-frequency module 100 according to the first embodiment in that it further includes a plurality of (eg, 25) metal members 150 . The plurality of metal members 150 are in contact with the metal electrode layer 10 .

[0149] The plurality of metal components 150 are arranged on the fourth main surface 52 of the second chip 5. The high-frequency module 100b further includes a conductor pattern portion 170 interposed between the plurality of metal components 150 and the fourth main surface 52 of the second chip 5. That is, the plurality of metal components 150 are arranged on the fourth main surface 52 of the second chip 5 via the conductor pattern portion 170. Each of the plurality of metal components 150 is a via conductor. The material of the plurality of metal components 150 includes, for example, copper. The material of the conductor pattern portion 170 includes, for example, copper.

[0150] The plurality of metal components 150 are arranged in a two-dimensional array when viewed from above in the thickness direction D0 of the mounting substrate 9. The plurality of metal components 150 are each circular when viewed from above in the thickness direction D0 of the mounting substrate 9. The plurality of metal components 150 are separated from each other when viewed from above in the thickness direction D0 of the mounting substrate 9.

[0151] The conductor pattern portion 170 is, for example, a quadrilateral shape when viewed from above in the thickness direction D0 of the mounting substrate 9, but is not limited thereto, and may be, for example, a circular shape. When viewed from above in the thickness direction D0 of the mounting substrate 9, the conductor pattern portion 170 overlaps all of the plurality of metal members 150. In addition, when viewed from above in the thickness direction D0 of the mounting substrate 9, the conductor pattern portion 170 overlaps a portion of at least one of the plurality of second functional electrodes 240 of the second chip 5.

[0152] In the high-frequency module 100 b , the insulating layer 7 covers the outer peripheral surface 153 of each metal member 150 and at least a portion of the second inductor L2 .

[0153] Each metal member 150 has a first end face 151 on the second chip 5 side and a second end face 152 on the opposite side to the second chip 5. In each metal member 150, the first end face 151 is in contact with the conductor pattern portion 170, and the second end face 152 is in contact with the metal electrode layer 10.

[0154] (2) Effect

[0155] According to the high-frequency module 100b of the third embodiment, the plurality of metal components 150 are in contact with the metal electrode layer 10, so that the heat dissipation can be improved. Therefore, the high-frequency module 100b of the third embodiment can suppress the decrease in the withstand power of the second filter 2 and suppress the characteristic change caused by the temperature rise. In addition, the number of metal components 150 is not limited to a plurality, and may be one.

[0156] (Implementation method 4)

[0157] Reference Fig.11 as well as Fig.12 , a high-frequency module 100c according to a fourth embodiment will be described. The high-frequency module 100c according to the fourth embodiment is different from the high-frequency module 100b according to the third embodiment (see Fig. 9 as well as Fig.10 ) The same components are marked with the same reference numerals and the description thereof is omitted. Fig.12 In the figure, the metal electrode layer 10, the insulating layer 7 and the resin layer 8 are omitted. Fig.11 is with Fig.12 The cross-sectional view corresponding to the X1-X1 line section.

[0158] (1) Structure

[0159] In the high frequency module 100c according to the fourth embodiment, one metal member 150 is arranged on the conductor pattern portion 170. When viewed from above in the thickness direction D0 of the mounting substrate 9, the metal member 150 is, for example, a quadrilateral shape, but is not limited thereto and may be a circular shape. When viewed from above in the thickness direction D0 of the mounting substrate 9, the outer edge 155 of the metal member 150 is located inside the outer edge 175 of the conductor pattern portion 170. When viewed from above in the thickness direction D0 of the mounting substrate 9, the metal member 150 is larger than each of the plurality of third terminal electrodes T3.

[0160] Furthermore, the metal member 150 overlaps a portion of at least one second functional electrode 240 among the plurality of second functional electrodes 240 of the second chip 5 in a plan view from the thickness direction D0 of the mounting substrate 9 .

[0161] (2) Effect

[0162] According to the high-frequency module 100c of the fourth embodiment, the metal member 150 is larger than each of the third terminal electrodes T3 when viewed from above in the thickness direction D0 of the mounting substrate 9. Therefore, the heat dissipation can be further improved compared with the high-frequency module 100b of the third embodiment.

[0163] (Implementation method 5)

[0164] Reference Fig.13 , a high frequency module 100d according to the fifth embodiment will be described. The high frequency module 100d according to the fifth embodiment is different from the high frequency module 100a according to the second embodiment (see Figure 7 ) The same components are marked with the same figure marks and the description is omitted.

[0165] (1) Structure

[0166] The high-frequency module 100d according to the fifth embodiment is different from the high-frequency module 100a according to the second embodiment in that a portion of the metal electrode layer 10 passes through the insulating layer 7 and is connected to the second inductor L2. More specifically, in the high-frequency module 100d, the insulating layer 7 has an opening 75 formed on the second inductor L2, and a portion of the metal electrode layer 10 is connected to the second inductor L2 through the opening 75.

[0167] (2) Effect

[0168] In the high-frequency module 100 d according to the fifth embodiment, a part of the metal electrode layer 10 penetrates the insulating layer 7 and is connected to the second inductor L2 . Therefore, the parasitic inductance can be reduced and the degradation of the characteristics of the second filter 2 can be suppressed.

[0169] (Implementation method 6)

[0170] Reference Fig.14 , a high-frequency module 100e according to the sixth embodiment will be described. The high-frequency module 100e according to the sixth embodiment is different from the high-frequency module 100a according to the second embodiment (see Figure 7 ) The same components are marked with the same figure marks and the description is omitted.

[0171] (1) Structure

[0172] The high-frequency module 100e according to the sixth embodiment is different from the high-frequency module 100 according to the first embodiment in that the metal electrode layer 10 has an opening 111 that exposes a portion of the main surface 71 of the insulating layer 7. The opening 111 of the metal electrode layer 10 has a rectangular shape when viewed from above in the thickness direction D0 of the mounting substrate 9, but the shape is not limited thereto and may be circular, for example.

[0173] When viewed from above in the thickness direction D0 of the mounting substrate 9, the opening edge 112 of the opening 111 of the metal electrode layer 10 is located inside the outer edge 70 of the insulating layer 7 and the outer edge 50 of the second chip 5. The opening 111 of the metal electrode layer 10 is formed so that the metal electrode layer 10 does not overlap with at least a portion of the second inductor L2 when viewed from above in the thickness direction D0 of the mounting substrate 9, and the metal electrode layer 10 does not overlap with the winding axis A2 of the second inductor L2.

[0174] In the high-frequency module 100e according to the sixth embodiment, regarding the second inductor L2, the winding axis A2 of the second inductor L2 is parallel to the thickness direction D0 of the mounting substrate 9, and the metal electrode layer 10 does not overlap with the winding axis A2 of the second inductor L2. The phrase "the winding axis A2 of the second inductor L2 is parallel to the thickness direction D0 of the mounting substrate 9" is not limited to being strictly parallel, and the angle formed by the winding axis A2 of the second inductor L2 and the thickness direction D0 of the mounting substrate 9 may be 10 degrees or less.

[0175] (2) Effect

[0176] In the high-frequency module 100 e according to the sixth embodiment, the metal electrode layer 10 does not overlap the winding axis A2 of the second inductor L2 , thereby suppressing a decrease in the Q value (Quality factor) of the second inductor L2 and suppressing a decrease in the characteristics of the second filter 2 .

[0177] (Implementation method 7)

[0178] Reference Fig.15 , Fig.16 A and Fig.16 B, a high-frequency module 100f according to the seventh embodiment will be described. The high-frequency module 100f according to the seventh embodiment is different from the high-frequency module 100 according to the first embodiment (see Figure 1 to Figure 3 ) The same components are marked with the same reference numerals and the description thereof is omitted. Fig.15 , Fig.16 A and Fig.16 In B, the second chip 5, the insulating layer 7, and the second inductor L2 are shown, and illustration of other components is omitted.

[0179] (1) Structure

[0180] In the high-frequency module 100f according to the seventh embodiment, the winding axis A2 (see Fig.16A) is parallel to the fourth main surface 52 of the second chip 5. The so-called "the winding axis A2 of the second inductor L2 is parallel to the fourth main surface 52 of the second chip 5" is not limited to the case of being strictly parallel, and the angle between the winding axis A2 of the second inductor L2 and the fourth main surface 52 of the second chip 5 may be less than 10 degrees.

[0181] In the second inductor L2, a first end of the second inductor L2 is connected to the parallel arm resonator P14 (see Figure 4 A) is connected, and the second end of the second inductor L2 is connected to the metal electrode layer 10 (see Figure 2 )connect.

[0182] The second inductor L2 includes a plurality of (e.g., 4) first conductor portions 231 to 234, a plurality of (e.g., 7) via-hole conductors 221 to 227, and a plurality of (e.g., 4) second conductor portions 241 to 244. The plurality of (e.g., 4) first conductor portions 231 to 234 are arranged on the fourth main surface 52 of the second chip 5. The plurality of second conductor portions 241 to 244 are arranged apart from the fourth main surface 52 of the second chip 5. Figure 2), each of the plurality of (for example, four) first conductor portions 231 to 234 is, for example, in a strip shape. The so-called strip shape is a shape in which the length in one direction is longer than the length in another direction intersecting the one direction. Each of the plurality of via-hole conductors 221 to 227 is, for example, in a circular shape. Each of the plurality of (for example, four) second conductor portions 241 to 244 is, for example, in a rectangular shape, having a first end and a second end, when viewed from above in the thickness direction D0 of the mounting substrate 9. The plurality of first conductor portions 231 to 234 and the plurality of second conductor portions 241 to 244 are appropriately connected through the plurality of via-hole conductors 221 to 227. In more detail, in the second inductor L2, the first end of the first conductor portion 231 is connected to the through wiring portion 211, and the second end of the first conductor portion 231 is connected to the first end of the second conductor portion 241 via the via-hole conductor 221. In addition, the second end of the second conductor portion 241 is connected to the first end of the first conductor portion 232 via the via-hole conductor 222, and the second end of the first conductor portion 232 is connected to the first end of the second conductor portion 242 via the via-hole conductor 223. In addition, the second end of the second conductor portion 242 is connected to the first end of the first conductor portion 233 via the via-hole conductor 224, and the second end of the first conductor portion 233 is connected to the first end of the second conductor portion 243 via the via-hole conductor 225. In addition, the second end of the second conductor portion 243 is connected to the first end of the first conductor portion 234 via the via-hole conductor 226. In addition, the second end of the first conductor portion 234 is connected to the first end of the second conductor portion 244 via the via-hole conductor 227. In addition, in the second inductor L2, the second end of the second conductor portion 244 is connected to the metal electrode layer 10 via the connecting via-hole conductor 251.

[0183] The material of the plurality of first conductor portions 231 to 234 , the plurality of via-hole conductors 221 to 227 , and the plurality of second conductor portions 241 to 244 includes copper, for example.

[0184] (2) Effect

[0185] According to the high-frequency module 100f according to the seventh embodiment, the winding axis A2 of the second inductor L2 is parallel to the fourth main surface 52 of the second chip 5, so that the magnetic flux generated in the second inductor L2 is not easily blocked by the metal electrode layer 10. Therefore, the high-frequency module 100f according to the seventh embodiment can suppress the decrease in the Q value (Quality factor) of the second inductor L2, and can suppress the decrease in the characteristics of the second filter 2.

[0186] (Implementation method 8)

[0187] Reference Fig.17 as well as Fig.18, a high-frequency module 100g according to the eighth embodiment will be described. The high-frequency module 100g according to the eighth embodiment is different from the high-frequency module 100 according to the first embodiment (see Figure 1 to Figure 3 ) The same components are marked with the same figure marks and the description is omitted.

[0188] (1) Structure

[0189] The high-frequency module 100g according to the eighth embodiment differs from the high-frequency module 100 according to the first embodiment in that the high-frequency module 100g according to the eighth embodiment does not include the insulating layer 7 of the high-frequency module 100 according to the first embodiment. The high-frequency module 100g according to the eighth embodiment differs from the high-frequency module 100 according to the first embodiment in that, when viewed from above in the thickness direction D0 of the mounting substrate 9, a portion of the first inductor L1 overlaps a portion of the second inductor L2.

[0190] In the high-frequency module 100g, the metal electrode layer 10 covers the main surface 81 and the outer peripheral surface of the resin layer 8 and a part of the fourth main surface 52 of the second chip 5. When viewed from the top in the thickness direction D0 of the mounting substrate 9, the metal electrode layer 10 has an opening 113 that is smaller than the second chip 5. When viewed from the top in the thickness direction D0 of the mounting substrate 9, the opening shape of the opening 113 of the metal electrode layer 10 is a rectangular shape, but is not limited to this, and may be a circular shape, for example. When viewed from the top in the thickness direction D0 of the mounting substrate 9, the opening edge 114 of the opening 113 of the metal electrode layer 10 is located on the inner side than the outer edge 50 of the second chip 5.

[0191] In the high-frequency module 100g, the conductor pattern portion constituting the second inductor L2 is made of the same material as the metal electrode layer 10. The conductor pattern portion constituting the second inductor L2 has the same thickness as the thickness of the portion of the metal electrode layer 10 disposed on the fourth main surface 52 of the second chip 5.

[0192] The opening 113 of the metal electrode layer 10 is formed so that the metal electrode layer 10 does not overlap with the second inductor L2 when viewed from the thickness direction D0 of the mounting substrate 9. Therefore, the opening 113 of the metal electrode layer 10 is formed so that the metal electrode layer 10 does not overlap with the winding axis A2 of the second inductor L2.

[0193] (2) Effect

[0194] According to the high-frequency module 100g involved in the eighth embodiment, the metal electrode layer 10 is in contact with a portion of the fourth main surface 52 of the second chip 5, so that the heat dissipation can be improved and the degradation of the characteristics can be suppressed. In addition, in the high-frequency module 100g, the second inductor L2 is arranged on the fourth main surface 52 of the second chip 5 and is connected to the ground via the metal electrode layer 10, so that the parasitic inductance can be reduced and the degradation of the characteristics can be suppressed.

[0195] (Implementation method 9)

[0196] Reference Fig.19 , a high-frequency module 100h according to a ninth embodiment will be described. The high-frequency module 100h according to the ninth embodiment is different from the high-frequency module 100a according to the second embodiment (see Figure 7 ) The same components are marked with the same figure marks and the description is omitted.

[0197] (1) Structure

[0198] The high-frequency module 100 h according to the ninth embodiment is different from the high-frequency module 100 a according to the second embodiment in that the second inductor L2 is arranged in the recess 54 formed in the fourth main surface 52 of the second chip 5 .

[0199] The recess 54 has a spiral shape when viewed from above in the thickness direction D0 of the mounting substrate 9. The second inductor L2 is composed of a conductor pattern portion (conductor layer) buried in the recess 54. Therefore, the second inductor L2 has a spiral shape when viewed from above in the thickness direction D0 of the mounting substrate 9.

[0200] (2) Manufacturing method

[0201] The method for manufacturing the high-frequency module 100h according to the ninth embodiment is similar to that of the high-frequency module 100 according to the first embodiment (see Figure 1 to Figure 3 ) are manufactured in roughly the same way.

[0202] In the method for manufacturing the high-frequency module 100h, for example, when manufacturing the second chip 5, a resist layer having an opening for forming the recess 54 is formed on the fourth main surface 552 of the second substrate 55, and the second substrate 55 is etched from the fourth main surface 552 side using the resist layer as a mask, thereby forming the recess 54. In addition, a conductor layer containing a material of the second inductor L2 is vapor-deposited in the recess 54 using the resist layer as a mask, and the resist layer and unnecessary conductor layers on the resist layer are peeled off, thereby forming the second inductor L2 composed of the conductor layer buried in the recess 54. In addition, for example, when the material of the second high-acoustic-velocity member 56 is silicon, the second chip 5 may have an insulating film between the inner surface of the recess 54 and the second inductor L2. The material of the insulating film includes, for example, silicon oxide.

[0203] (3) Effect

[0204] In the high-frequency module 100h according to the ninth embodiment, the second inductor L2 as the second circuit element is disposed in the recess 54 formed on the fourth main surface 52 of the second chip 5. Thus, the high-frequency module 100h can be made low-profile.

[0205] (Implementation 10)

[0206] Reference Fig. 20 , a high-frequency module 100i according to the tenth embodiment will be described. The high-frequency module 100i according to the tenth embodiment is different from the high-frequency module 100 according to the first embodiment (see Figure 1 to Figure 4 B) The same components are denoted by the same reference numerals, and description thereof is omitted.

[0207] (1) Structure

[0208] The high-frequency module 100i according to the tenth embodiment is different from the high-frequency module 100 according to the first embodiment in that the first inductor L1 of the first filter 1 is arranged on the second main surface 42 of the first chip 4. In addition, the high-frequency module 100i according to the tenth embodiment is different from the high-frequency module 100 according to the first embodiment in that a part of the first inductor L1 overlaps a part of the second inductor L2 when viewed from above in the thickness direction D0 of the mounting substrate 9. In addition, in addition to the insulating layer 7 arranged on the fourth main surface 52 of the second chip 5 and covering the second inductor L2, the high-frequency module 100i further includes an insulating layer 7A arranged on the second main surface 42 of the first chip 4 and covering the first inductor L1.

[0209] (2) Effect

[0210] In the high-frequency module 100 i according to the tenth embodiment, compared with the case where the first inductor L1 is provided on the mounting substrate 9 , the wiring length between the parallel arm resonator P14 of the first filter 1 and the first inductor L1 can be shortened, thereby suppressing degradation of characteristics.

[0211] (Implementation 11)

[0212] Reference Figure 21 to Figure 23 , a high-frequency module 100j according to Embodiment 11 will be described. The high-frequency module 100j according to Embodiment 11 is different from the high-frequency module 100 according to Embodiment 1 (see Figure 1 to Figure 4 B) The same components are marked with the same reference numerals and their descriptions are omitted. Fig.21 is corresponding to Fig. 22 A cross-sectional view of the high-frequency module 100j taken along the Y1-Y1 line of FIG. Fig. 22 , which is different from that described in the first variant of the first embodiment. Figure 5 Similarly, the first direction D1 and the second direction D2 are shown. Fig. 22 Zhong Ye and Figure 5 The same dotted shadows are attached, but Fig. 22 The dotted hatching in the figure does not represent a cross section, but is only provided to make the drawing easier to see.

[0213] (1) Structure

[0214] The high frequency module 100j according to the eleventh embodiment is different from the high frequency module 100 according to the first embodiment in that Fig.23 As shown, the second filter 2 (see Figure 4 The second inductor L2 of B) includes an inductor L20. In the high-frequency module 100j, the second circuit element related to the second filter 2 includes the inductor L20 connected in parallel with one (the series arm resonator S24) of the plurality of series arm resonators S21 to S24.

[0215] The inductor L20 is directly connected to two parallel arm resonators P23 and P24 among the plurality of (4) parallel arm resonators P21 to P24. The inductor L20 is connected to the remaining two parallel arm resonators P21 and P22 among the plurality of parallel arm resonators P21 to P24 via at least one other second elastic wave resonator 24. In more detail, the parallel arm resonator P22 is connected to the inductor L20 via one series arm resonator S23, and the parallel arm resonator P21 is connected to the inductor L20 via two series arm resonators S22 and S23. In addition, the series arm resonator S22 is connected to the inductor L20 via one series arm resonator S23, and the series arm resonator S21 is connected to the inductor L20 via two series arm resonators S22 and S23.

[0216] like Fig.21 As shown in FIG. 1 , the inductor L20 is arranged on the fourth main surface 52 of the second chip 5. The inductor L20 is covered by the insulating layer 7. Fig. 22 As shown, the inductor L20 includes a spiral conductor pattern portion 160. The conductor pattern portion 160 is made of, for example, copper.

[0217] In the high-frequency module 100j, the plurality of third terminal electrodes T3 of the second chip 5 include the third input-output terminal 25, the fourth input-output terminal 26, the second ground terminal 27A, the second ground terminal 27B, the second connection terminal 28A, and the second connection terminal 28B. The second connection terminal 28A is a terminal for connecting two series arm resonators S23 and S24 and one parallel arm resonator P23. The second connection terminal 28B is a terminal for connecting the fourth input-output terminal 26, one series arm resonator S24, and one parallel arm resonator P24. In addition, in the high-frequency module 100j, the plurality of fourth terminal electrodes T4 of the second chip 5 include the first connection electrode 29A connected to the first end of the inductor L20 and the second connection electrode 29B connected to the second end of the inductor L20. The second chip 5 includes a through-wiring portion 59A connecting the second connection terminal 28A and the first connection electrode 29A, and a through-wiring portion 59B connecting the second connection terminal 28B and the second connection electrode 29B.

[0218] When viewed from the top in the thickness direction D0 of the mounting substrate 9, Fig. 22 As shown, the inductor L20 overlaps at least one of two parallel arm resonators P23 and P24 directly connected to the inductor L20 among the plurality of parallel arm resonators P21 to P24 and the series arm resonator S24 to which the inductor L20 is connected in parallel among the plurality of series arm resonators S21 to S24, and the remaining second elastic wave resonators 24 (in the plurality of second elastic wave resonators 24) overlap with each other. Fig. 22 In the example, none of the three series arm resonators S21 to S23 and the three parallel arm resonators P21 to P23 overlap. Alternatively, the inductor L20 may overlap both of the two parallel arm resonators P23 and P24 when viewed from above in the thickness direction D0 of the mounting substrate 9.

[0219] (2) Effect

[0220] In high-frequency module 100j according to Embodiment 11, in a plan view from thickness direction D0 of mounting substrate 9, inductor L20 overlaps parallel arm resonator P24 and series arm resonator S24, and does not overlap any of the remaining second elastic wave resonators 24 among the plurality of second elastic wave resonators 24. Therefore, it is possible to suppress degradation of attenuation while achieving miniaturization.

[0221] (Implementation 12)

[0222] Reference Figure 24 to Figure 26 , a high-frequency module 100k according to Embodiment 12 will be described. The high-frequency module 100k according to Embodiment 12 is different from the high-frequency module 100 according to Embodiment 1 (see Figure 2 as well as Figure 3) The same components are marked with the same reference numerals and the description thereof is omitted. Fig.24 is with Fig.25 The cross-sectional view of the high-frequency module 100k corresponds to the cross-sectional view along the X1-X1 line of FIG. Fig.25 , which is different from that described in the first variant of the first embodiment. Figure 5 Similarly, the first direction D1 and the second direction D2 are shown. Fig.25 Zhong Ye and Figure 5 The same dotted shadows are attached, but Fig.25 The dotted hatching in the figure does not represent a cross section, but is only provided to make the drawing easier to see.

[0223] (1) Structure

[0224] The high frequency module 100k according to the twelfth embodiment is different from the high frequency module 100 according to the first embodiment in that Fig.26 As shown, the second filter 2 (see Figure 4 The inductor L20 is provided in place of the second inductor L2 of B).

[0225] The inductor L20 is directly connected to two parallel arm resonators P23 and P24 among the plurality of (4) parallel arm resonators P21 to P24. The inductor L20 is connected to the remaining two parallel arm resonators P21 and P22 among the plurality of parallel arm resonators P21 to P24 via at least one other second elastic wave resonator 24. In more detail, the parallel arm resonator P22 is connected to the inductor L20 via one series arm resonator S23, and the parallel arm resonator P21 is connected to the inductor L20 via two series arm resonators S22 and S23. In addition, the series arm resonator S22 is connected to the inductor L20 via one series arm resonator S23, and the series arm resonator S21 is connected to the inductor L20 via two series arm resonators S22 and S23.

[0226] In the high frequency module 100k, the second circuit element related to the second filter 2 includes a first conductor pattern portion 161 (see Fig.24 as well as Fig.25). The remaining portion of the inductor L20 includes a second conductor pattern portion 162 disposed on the third main surface 51 of the second chip 5 and a conductor portion 163 that penetrates the second chip 5 in the thickness direction and connects the first conductor pattern portion 161 and the second conductor pattern portion 162. When viewed from above in the thickness direction D0 of the mounting substrate 9, the first conductor pattern portion 161 is spiral-shaped. In addition, when viewed from above in the thickness direction D0 of the mounting substrate 9, the second conductor pattern portion 162 is spiral-shaped. The materials of the first conductor pattern portion 161, the second conductor pattern portion 162, and the conductor portion 163 include, for example, copper.

[0227] In the high-frequency module 100k, the first conductor pattern portion 161 disposed on the fourth main surface 52 of the second chip 5 and the second conductor pattern portion 162 disposed on the third main surface 51 of the second chip 5 overlap each other when viewed from above in the thickness direction D0 of the mounting substrate 9. In the high-frequency module 100k, a part of the first conductor pattern portion 161 overlaps a part of the second conductor pattern portion 162, but the present invention is not limited thereto. A part of the first conductor pattern portion 161 may overlap the entirety of the second conductor pattern portion 162, the entirety of the first conductor pattern portion 161 may overlap a part of the second conductor pattern portion 162, or the entirety of the first conductor pattern portion 161 may overlap the entirety of the second conductor pattern portion 162. The first conductor pattern portion 161 is covered by the insulating layer 7. In the high-frequency module 100k, the plurality of third terminal electrodes T3 included in the second chip 5 include the third input / output terminal 25, the fourth input / output terminal 26, the second ground terminal 27A, the second ground terminal 27B, and the second connection terminal 28A. The second connection terminal 28A is a terminal for connecting two series arm resonators S23 and S24 and one parallel arm resonator P23. In addition, in the high-frequency module 100k, the plurality of fourth terminal electrodes T4 included in the second chip 5 include a first connection electrode 29A connected to the first end of the inductor L20. The second chip 5 has a through wiring portion 59A connecting the second connection terminal 28A and the first connection electrode 29A.

[0228] like Fig.25 As shown, in a plan view from the thickness direction D0 of the mounting substrate 9 , the inductor L20 does not overlap with any of the plurality of second elastic wave resonators 24 .

[0229] (2) Effect

[0230] In the high-frequency module 100 k according to the twelfth embodiment, the second circuit element includes the first conductor pattern portion 161 as a part of the inductor L20 , and the remainder of the inductor L20 includes the second conductor pattern portion 162 and the conductor portion 163 . Therefore, the inductance of the inductor L20 can be further increased.

[0231] In the high-frequency module 100 k according to the twelfth embodiment, the first conductor pattern portion 161 and the second conductor pattern portion 162 overlap each other when viewed from above in the thickness direction D0 of the mounting substrate 9 . Therefore, the inductance of the inductor L20 can be increased while achieving miniaturization.

[0232] (Implementation 13)

[0233] Reference Fig. 27 , Fig.28 A and Fig.28 B, a high frequency module 100m according to Embodiment 13 will be described. The high frequency module 100m according to Embodiment 13 is different from the high frequency module 100a according to Embodiment 2 (see Figure 7 ) The same components are marked with the same figure marks and the description is omitted.

[0234] (1) Structure

[0235] The high frequency module 100m according to the thirteenth embodiment is different from the high frequency module 100a according to the second embodiment in that Fig.28 As shown in A, the high frequency module 100 according to the first embodiment does not include the first filter 1 (see Figure 4 A) includes an inductor L1 and an inductor L10 connected in parallel with the series arm resonator S14.

[0236] In the high frequency module 100m, such as Fig. 27 As shown, the inductor L10 is included in the first filter 1 (refer to Fig.28 The inductor L10 is a first circuit element related to A) and is arranged on the second main surface 42 side of the first chip 4. The inductor L10 is provided on the mounting substrate 9, but is not limited thereto, and may be arranged on the second main surface 42 of the first chip 4.

[0237] In the high frequency module 100m, the inductor L2 is included in the second filter 2 (see Fig.28 B) and is arranged on the fourth main surface 52 of the second chip 5.

[0238] (2) Effect

[0239] In the high-frequency module 100m according to the thirteenth embodiment, the inductor L10 as the first circuit element related to the first filter 1 is arranged on the second main surface 42 side of the first chip 4, and the inductor L2 as the second circuit element related to the second filter 2 is arranged on the fourth main surface 52 of the second chip 5, so that it is possible to suppress the degradation of characteristics while pursuing miniaturization. More specifically, according to the high-frequency module 100m, the second chip 5 is arranged on the side opposite to the mounting substrate 9 side of the first chip 4, thereby achieving miniaturization. In addition, according to the high-frequency module 100m, the wiring length between the inductor L2 and the second elastic wave resonator 24 connected to the inductor L2 in the second chip 5 can be shortened, and the degradation of the characteristics of the second filter 2 can be suppressed. Furthermore, according to the high-frequency module 100m, the inductor L10 associated with the first filter 1 is arranged on the second main surface 42 side of the first chip 4, and the inductor L2 included in the second filter 2 is arranged on the fourth main surface 52 of the second chip 5, thereby improving the isolation between the inductor L10 and the inductor L2. As a result, the high-frequency module 100m can suppress the degradation of the characteristics of the first filter 1 and the second filter 2.

[0240] (Variation of Implementation Example 13)

[0241] The high frequency module 100m according to the modification of the thirteenth embodiment is different from the high frequency module 100m according to the thirteenth embodiment in that Fig.29 As shown, the third input / output terminal 25 of the second filter 2 is connected to the first input / output terminal 15 of the first filter 1 , thereby providing a duplexer Dp1 including the first filter 1 and the second filter 2 .

[0242] (Implementation 14)

[0243] Reference Fig.30 as well as Fig.31 , a high-frequency module 100n according to a fourteenth embodiment will be described. The high-frequency module 100n according to the fourteenth embodiment is different from the high-frequency module 100 according to the first embodiment (see Figure 1 to Figure 4 B) The same components are denoted by the same reference numerals, and description thereof is omitted.

[0244] (1) Structure

[0245] The high frequency module 100n according to the fourteenth embodiment is different from the high frequency module 100 according to the first embodiment in that Fig.31As shown, the inductor L1 of the first filter 1 in the high-frequency module 100 according to the first embodiment is not included. In addition, the high-frequency module 100n according to the fourteenth embodiment is different from the high-frequency module 100 according to the first embodiment in that a capacitor C1 is provided which is connected between the series arm resonator S14 closest to the second input-output terminal 16 and the second input-output terminal 16 in the first signal path Ru1. In addition, in the high-frequency module 100n, the third input-output terminal 25 of the second filter 2 is connected to the first input-output terminal 15 of the first filter 1, thereby providing a duplexer Dp1 including the first filter 1 and the second filter 2.

[0246] For example, Fig.30 As shown, capacitor C1 is provided on mounting substrate 9. More specifically, capacitor C1 is built into mounting substrate 9. Capacitor C1 is a capacitor including two conductor pattern portions 95 formed in mounting substrate 9. Here, two conductor pattern portions 95 overlap in thickness direction D0 of mounting substrate 9 and are separated from each other.

[0247] In high frequency module 100n, capacitor C1 is included in the first circuit element related to first filter 1 and is arranged on second main surface 42 side of first chip 4. Capacitor C1 is provided on mounting substrate 9, but is not limited thereto and may be arranged on second main surface 42 of first chip 4.

[0248] In the high-frequency module 100 n , the inductor L2 is included in the second circuit element related to the second filter 2 , and is arranged on the fourth main surface 52 of the second chip 5 .

[0249] (2) Effect

[0250] In the high-frequency module 100n according to the fourteenth embodiment, the capacitor C1 as the first circuit element related to the first filter 1 is arranged on the second main surface 42 side of the first chip 4, and the inductor L2 as the second circuit element related to the second filter 2 is arranged on the fourth main surface 52 of the second chip 5, so that it is possible to suppress the degradation of characteristics while achieving miniaturization. More specifically, according to the high-frequency module 100n, the second chip 5 is arranged on the side opposite to the mounting substrate 9 side of the first chip 4, thereby achieving miniaturization. In addition, according to the high-frequency module 100n, the wiring length between the second inductor L2 and the second elastic wave resonator 24 connected to the second inductor L2 in the second chip 5 can be shortened, and the degradation of the characteristics of the second filter 2 can be suppressed. Furthermore, according to the high-frequency module 100n, the capacitor C1 associated with the first filter 1 is arranged on the second main surface 42 side of the first chip 4, and the inductor L2 included in the second filter 2 is arranged on the fourth main surface 52 of the second chip 5, thereby improving the isolation between the capacitor C1 and the inductor L2. As a result, the high-frequency module 100n can suppress the degradation of the characteristics of the first filter 1 and the second filter 2.

[0251] (Variation 1 of Implementation Example 14)

[0252] In the first variation of the fourteenth embodiment, the circuit configurations of the first filter 1 and the second filter 2 of the high-frequency module 100n according to the fourteenth embodiment are different, the first circuit element is an inductor, and the second circuit element is a capacitor.

[0253] (Implementation 15)

[0254] Reference Fig.32 as well as Fig.33 , a high-frequency module 100p according to a fifteenth embodiment will be described. The high-frequency module 100p according to the fifteenth embodiment is different from the high-frequency module 100 according to the first embodiment (see Figure 1 to Figure 4 B) The same components are denoted by the same reference numerals, and description thereof is omitted.

[0255] (1) Structure

[0256] In the high frequency module 100p according to the fifteenth embodiment, the second filter 2 has the following Fig.33The circuit structure shown. In the high frequency module 100p, the second filter 2 further includes a capacitor C21 connected in parallel with the parallel arm resonator P21, a capacitor C22 connected in parallel with the parallel arm resonator P22, a capacitor C23 connected in parallel with the parallel arm resonator P23, and a capacitor C24 connected in parallel with the parallel arm resonator P24. The second filter 2 includes capacitors C21 to C24, thereby narrowing the passband of the second filter 2, and for example, a filter having a passband corresponding to the frequency band of Band 30 of the 3GPP LTE standard can be adopted.

[0257] The plurality of capacitors C21 to C24 of the second filter 2 are arranged on the fourth main surface 52 side of the second chip 5. Each of the plurality of capacitors C21 to C24 is a capacitor including two conductor pattern portions. In the high frequency module 100p according to the fifteenth embodiment, the plurality of capacitors C21 to C24 of the second filter 2 are second circuit elements of the second filter 2.

[0258] In the high-frequency module 100p according to the fifteenth embodiment, the inductor L1 as the first circuit element related to the first filter is arranged on the second main surface 42 side of the first chip 4, and the capacitors C21 to C24 as the second circuit elements related to the second filter 2 are arranged on the fourth main surface 52 side of the second chip 5. Thus, the high-frequency module 100p according to the fifteenth embodiment can suppress degradation of the characteristics of the second filter 2 while narrowing the passband of the second filter 2. In addition, the second filter 2 only needs to include at least one of the plurality of capacitors C21 to C24.

[0259] (Implementation 16)

[0260] Reference Figure 34 to Figure 36 , a high-frequency module 100q according to Embodiment 16 will be described. The high-frequency module 100q according to Embodiment 16 is different from the high-frequency module 100 according to Embodiment 1 (see Figure 1 to Figure 4 B) The same components are marked with the same reference numerals and their descriptions are omitted. Fig.35 is with Fig.34 The sectional view corresponding to the X1-X1 line section. Fig.34 In the figure, the insulating layer 7, the resin layer 8 and the metal electrode layer 10 are omitted.

[0261] (1) Structure

[0262] The high-frequency module 100q according to the sixteenth embodiment is different from the high-frequency module 100 according to the first embodiment in that the second filter 2 does not include the inductor L2 (see Figure 4 B), and if Fig.36As shown, the parallel arm resonator P24 is connected to the same second ground as the other three parallel arm resonators P21 to P23.

[0263] In the second filter 2 of the high frequency module 100q, as shown in FIG. Fig.36 As shown, three parallel arm resonators P21, P22, and P24 among the plurality of parallel arm resonators P21 to P24 are connected to the same second ground terminal 27A, and the parallel arm resonator P23 is connected to a second ground terminal 27B different from the second ground terminal 27A. In addition, in the high frequency module 100q, the first input-output terminal 15 of the first filter 1 and the third input-output terminal 25 of the second filter 2 are connected, thereby providing a duplexer Dp1 including the first filter 1 and the second filter 2.

[0264] In the high-frequency module 100q, a wiring portion W25 that connects one parallel arm resonator P24 among the plurality of parallel arm resonators P21 to P24 to a path between the parallel arm resonator P22 and the ground (the second ground terminal 27A) is arranged on the fourth main surface 52 of the second chip 5. In the high-frequency module 100q, the wiring portion W25 constitutes a second circuit element associated with the second filter 2.

[0265] In the high-frequency module 100q according to the sixteenth embodiment, the second circuit element includes the wiring portion W25 connecting one parallel arm resonator P24 of the plurality of parallel arm resonators P21 to P24 to a path between the parallel arm resonator P22 and the ground. This can reduce the size while suppressing degradation of characteristics.

[0266] (Implementation 17)

[0267] Reference Fig.37 , a high-frequency module 100r according to Embodiment 17 will be described. The high-frequency module 100r according to Embodiment 17 is different from the high-frequency module 100 according to Embodiment 1 (see Figure 1 to Figure 4 B) The same components are denoted by the same reference numerals, and description thereof is omitted.

[0268] (1) Structure

[0269] In high-frequency module 100r according to Embodiment 17, first chip 4 includes at least one second elastic wave resonator 24 different from at least one second elastic wave resonator 24 (parallel arm resonator P24) included in second chip 5, among the plurality of second elastic wave resonators 24. In short, in high-frequency module 100r, the plurality of second elastic wave resonators 24 are formed separately in first chip 4 and second chip 5.

[0270] In high-frequency module 100 r, second chip 5 includes one or more first elastic wave resonators 14 different from at least one first elastic wave resonator 14 (parallel arm resonator P14) among the plurality of first elastic wave resonators 14. In short, in high-frequency module 100 r, the plurality of first elastic wave resonators 14 are formed separately in first chip 4 and second chip 5.

[0271] In a plan view from the thickness direction D0 of the mounting substrate 9, the second parallel arm resonator P24 connected to the second inductor L2 among the plurality of second elastic wave resonators 24 and the first parallel arm resonator P14 connected to the first inductor L1 among the plurality of first elastic wave resonators 14 do not overlap. In a plan view from the thickness direction D0 of the mounting substrate 9, a portion of the second inductor L2 overlaps a portion of the second parallel arm resonator P24, and a portion of the first inductor L1 overlaps a portion of the first parallel arm resonator P14.

[0272] The second inductor L2 and the first inductor L1 do not overlap each other in a plan view from the thickness direction D0 of the mounting substrate 9 .

[0273] The first inductor L1 as the first circuit element is arranged on the second main surface 42 side of the first chip 4. In addition, the second inductor L2 as the second circuit element is arranged on the fourth main surface 52 of the second chip 5.

[0274] (2) Effect

[0275] In high-frequency module 100r according to embodiment 17, first chip 4 includes at least one second elastic wave resonator 24 different from second parallel arm resonator P24 among the plurality of second elastic wave resonators 24, and second chip 5 includes at least one first elastic wave resonator 14 different from first parallel arm resonator P14 among the plurality of first elastic wave resonators 14, thereby achieving miniaturization while suppressing degradation of characteristics.

[0276] (Implementation 18)

[0277] Reference Fig.38 , a high-frequency module 100s according to Embodiment 18 will be described. The high-frequency module 100s according to Embodiment 18 is different from the high-frequency module 100 according to Embodiment 1 (see Figure 1 to Figure 4 B) The same components are denoted by the same reference numerals, and description thereof is omitted.

[0278] (1) Structure

[0279] In the high-frequency module 100s according to the eighteenth embodiment, the first chip 4 includes one or more second elastic wave resonators 24 different from the at least one second elastic wave resonator 24 (parallel arm resonator P24) included in the second chip 5. In summary, in the high-frequency module 100s, the plurality of second elastic wave resonators 24 are formed separately in the first chip 4 and the second chip 5. In addition, in the high-frequency module 100s, the second chip 5 includes a plurality of third elastic wave resonators 34 of the third filter 3. In addition, the third filter 3 is a ladder filter. In addition, Fig.38 In FIG. 2 , regarding third filter 3 , only one third elastic wave resonator 34 among a plurality of third elastic wave resonators 34 is visible.

[0280] In a plan view from the thickness direction D0 of the mounting substrate 9, the second parallel arm resonator P24 connected to the second inductor L2 among the plurality of second elastic wave resonators 24 and the first parallel arm resonator P14 connected to the first inductor L1 among the plurality of first elastic wave resonators 14 do not overlap. In a plan view from the thickness direction D0 of the mounting substrate 9, a portion of the second inductor L2 overlaps a portion of the second parallel arm resonator P24, and a portion of the first inductor L1 overlaps a portion of the first parallel arm resonator P14.

[0281] The second inductor L2 and the first inductor L1 do not overlap each other in a plan view from the thickness direction D0 of the mounting substrate 9 .

[0282] The first inductor L1 as the first circuit element is arranged on the second main surface 42 side of the first chip 4. In addition, the second inductor L2 as the second circuit element is arranged on the fourth main surface 52 of the second chip 5.

[0283] (2) Effect

[0284] In the high-frequency module 100s involved in the eighteenth embodiment, the first chip 4 includes one or more second elastic wave resonators 24 different from the second parallel arm resonator P24 among the plurality of second elastic wave resonators 24, and the second chip 5 includes the plurality of third elastic wave resonators 34 of the third filter 3. Therefore, it is possible to achieve miniaturization in the structure including the third filter 3 and suppress degradation of characteristics.

[0285] (Implementation 19)

[0286] The following is based on Fig.39 as well as Fig.40 , a high-frequency module 100t according to Embodiment 19 will be described. The high-frequency module 100t according to Embodiment 19 is different from the high-frequency module 100 according to Embodiment 1 (see Figure 1 to Figure 4 B) The same components are denoted by the same reference numerals, and description thereof is omitted.

[0287] (1) Summary

[0288] like Fig.39 As shown, the high frequency module 100t according to the nineteenth embodiment includes a mounting substrate 9, a first chip 4, a second chip 5, and an electronic component 11 (see Fig.40 ), electronic component 12, electronic component 13, wiring portion W22, resin layer 8, insulating layer 7, metal electrode layer 10, and a plurality of external connection terminals 6. Mounting substrate 9 has a main surface 91. The first chip 4 includes a first filter 1 (see Fig.40 ) of a plurality of (e.g., eight) first elastic wave resonators 14 (see Figure 4 A). The first chip 4 is arranged on the main surface 91 of the mounting substrate 9. The second chip 5 includes a second filter 2 different from the first filter 1 (see Fig.40 ) of a plurality of (e.g., eight) second elastic wave resonators 24 (see Figure 4 B). The second chip 5 is arranged on the side of the first chip 4 opposite to the mounting substrate 9 side. That is, the high-frequency module 100t has a stacked structure ST1 including the first chip 4 and the second chip 5 stacked on the first chip 4. The first chip 4 has a first main surface 41 on the second chip 5 side and a second main surface 42 on the mounting substrate 9 side. The second chip 5 has a third main surface 51 on the first chip 4 side and a fourth main surface 52 on the opposite side to the first chip 4 side. The first filter 1 and the second filter 2 are filters that use different frequency bands as passbands. The first filter 1 and the second filter 2 are each a transmitting filter or a receiving filter or a transceiver filter. The passband of the first filter 1 corresponds to the first communication frequency band, and the passband of the second filter 2 corresponds to the second communication frequency band. The electronic component 11, the electronic component 12, and the electronic component 13 are arranged on the main surface 91 of the mounting substrate 9. The wiring portion W22 connects the second filter 2 and the electronic component 12.

[0289] (2) Details

[0290] Below, refer to Fig.39 as well as Fig.40 , the high-frequency module 100t according to the nineteenth embodiment will be described in more detail.

[0291] The inductor L1 as a circuit element related to the first filter 1 is arranged on the second main surface 42 side of the first chip 4. The inductor L1 is provided on the mounting substrate 9, but is not limited thereto, and may be arranged on the second main surface 42 of the first chip 4.

[0292] The electronic component 11 is, for example, an inductor included in a matching circuit connected to the first filter 1. In addition, the inductor included in the matching circuit connected to the first filter 1 is a chip inductor arranged on the main surface 91 of the mounting substrate 9, but is not limited to this, and may also be an inner layer inductor composed of a conductor pattern portion in the mounting substrate 9.

[0293] The electronic component 12 is, for example, an inductor included in a matching circuit connected to the second filter 2. The electronic component 12 includes a first electrode 121 located on the principal surface 91 side of the mounting substrate 9 and a second electrode 122 located on the opposite side to the principal surface 91 side.

[0294] The electronic component 13 is, for example, an inductor included in a matching circuit connected to the first filter 1 and the second filter 2. The electronic component 13 includes a first electrode 131 and a second electrode 132. The first electrode 131 is connected to the first chip 4 and the second chip 5 via the conductor portion 96 of the mounting substrate 9 and the series arm resonator S21 (see Figure 4 The second electrode 132 is connected to an external ground terminal arranged on the second main surface 92 of the mounting substrate 9 .

[0295] Resin layer 8 is disposed on main surface 91 of mounting substrate 9 . Resin layer 8 covers at least a portion of outer peripheral surface 43 of first chip 4 , at least a portion of outer peripheral surface 53 of second chip 5 , and at least a portion of outer peripheral surface 123 of electronic component 12 .

[0296] The wiring portion W22 is a conductor pattern portion and is provided across the fourth principal surface 52 of the second chip 5 , the principal surface 81 of the resin layer 8 on the opposite side to the mounting substrate 9 , and the second electrode 122 of the electronic component 12 .

[0297] The insulating layer 7 is disposed on the fourth main surface 52 of the second chip 5 . The insulating layer 7 covers the fourth main surface 52 of the second chip 5 , the second inductor L2 , the wiring portion W22 , and the main surface 81 of the resin layer 8 .

[0298] Metal electrode layer 10 covers principal surface 71 and outer peripheral surface 73 of insulating layer 7 , outer peripheral surface 83 of resin layer 8 , and outer peripheral surface 93 of mounting substrate 9 .

[0299] (3) Effect

[0300] According to the high-frequency module 100t involved in the nineteenth embodiment, it is possible to suppress the degradation of characteristics while pursuing miniaturization. More specifically, in the high-frequency module 100t, the second chip 5 is arranged on the side opposite to the mounting substrate 9 side in the first chip 4, thereby achieving miniaturization. In addition, according to the high-frequency module 100t, the wiring portion W22 connecting the second filter 2 and the electronic component 12 is arranged across the fourth main surface 52 of the second chip 5, the main surface 81 of the resin layer 8 on the side opposite to the mounting substrate 9 side, and the second electrode 122 of the electronic component 12, so that the wiring length between the second filter 2 and the second circuit element (the electronic component 12 included in the matching circuit) related to the second filter 2 can be shortened, and the degradation of the characteristics of the second filter 2 can be suppressed.

[0301] Furthermore, according to the high-frequency module 100t, the first inductor L1 associated with the first filter 1 is arranged on the second main surface 42 side of the first chip 4, and the second inductor L2 associated with the second filter 2 is arranged on the fourth main surface 52 of the second chip 5, thereby improving the isolation between the first inductor L1 and the second inductor L2. As a result, the high-frequency module 100t can suppress the degradation of the characteristics of the first filter 1 and the second filter 2.

[0302] (Variation of Implementation Example 19)

[0303] like Fig.41 As shown, the modified example of the high frequency module of the nineteenth embodiment does not include the electronic component 13 of the nineteenth embodiment (see Fig.40 ), the electronic component 11 is arranged on the main surface 91 of the mounting substrate 9 in the same manner as the electronic component 13, and is connected to the first filter 1 via the conductor pattern portion of the mounting substrate 9.

[0304] (Other variations)

[0305] The above-mentioned embodiments 1 to 19 are only one of various embodiments of the present invention. As long as the purpose of the present invention can be achieved, various changes can be made to the above-mentioned embodiments 1 to 19 according to the design, etc., and different components of different embodiments can be appropriately combined.

[0306] For example, in first filter 1, at least one of the plurality of first elastic wave resonators 14 may be formed of a plurality (e.g., two or three) of split resonators. The plurality of split resonators are resonators obtained by splitting one first elastic wave resonator 14, wherein no other first elastic wave resonator 14 exists between the split resonators and the split resonators are not connected in series via a connection node with a path including the other first elastic wave resonator 14.

[0307] Furthermore, in second filter 2, at least one of the plurality of second elastic wave resonators 24 may be formed of, for example, a plurality of (for example, two or three) split resonators. The plurality of split resonators are resonators obtained by splitting one second elastic wave resonator 24, wherein no other second elastic wave resonator 24 exists between the split resonators and the split resonators are not connected in series via a connection node with a path including the other second elastic wave resonator 24.

[0308] In high-frequency module 100a, shield electrode 135 is arranged to overlap second elastic wave resonator 24 and first elastic wave resonator 14 when viewed from above in thickness direction D0 of mounting substrate 9, but the present invention is not limited thereto. For example, shield electrode 135 may be arranged to overlap only second elastic wave resonator 24 of second elastic wave resonator 24 and first elastic wave resonator 14 when viewed from above in thickness direction D0 of mounting substrate 9, or may be arranged to overlap only first elastic wave resonator 14. Shield electrode 135 is not limited to a structure supported by second chip 5, and may be a structure supported by first chip 4.

[0309] Furthermore, the first circuit element related to the first filter 1 may be an inductor or a capacitor included in a matching circuit connected to the first filter 1 .

[0310] Furthermore, the second circuit element related to the second filter 2 may be an inductor or a capacitor included in a matching circuit connected to the second filter.

[0311] The first substrate 45 in the first chip 4 may be configured to include, for example, a first support substrate and a first high-acoustic-velocity film interposed between the first support substrate and the first low-acoustic-velocity film 47 instead of the first high-acoustic-velocity member 46. The first high-acoustic-velocity film is a film in which the acoustic velocity of the bulk wave propagating through the first high-acoustic-velocity film is higher than the acoustic velocity of the elastic wave propagating through the first piezoelectric layer 48. Furthermore, the second substrate 55 in the second chip 5 may be configured to include, for example, a second support substrate and a second high-acoustic-velocity film interposed between the second support substrate and the second low-acoustic-velocity film 57 instead of the second high-acoustic-velocity member 56. The second high-acoustic-velocity film is a film in which the acoustic velocity of the bulk wave propagating through the second high-acoustic-velocity film is higher than the acoustic velocity of the elastic wave propagating through the second piezoelectric layer 58. The material of each of the first high acoustic velocity membrane and the second high acoustic velocity membrane is, for example, silicon nitride, but is not limited to silicon nitride, and may be at least one material selected from the group consisting of diamond-like carbon, aluminum nitride, silicon carbide, silicon oxynitride, silicon, sapphire, lithium tantalate, lithium niobate, quartz, zirconium oxide, cordierite, mullite, steatite, forsterite, magnesium oxide and diamond.

[0312] In addition, the first substrate 45 may include, for example, a first adhesion layer between the first low acoustic velocity film 47 and the first piezoelectric layer 48. The first adhesion layer is composed of, for example, a resin (epoxy resin, polyimide resin). In addition, the first substrate 45 may include a first dielectric film between the first low acoustic velocity film 47 and the first piezoelectric layer 48, on the first piezoelectric layer 48, or under the first low acoustic velocity film 47. In addition, the second substrate 55 may include, for example, a second adhesion layer between the second low acoustic velocity film 57 and the second piezoelectric layer 58. The second adhesion layer is composed of, for example, a resin (epoxy resin, polyimide resin). In addition, the second substrate 55 may include a second dielectric film between the second low acoustic velocity film 57 and the second piezoelectric layer 58, on the second piezoelectric layer 58, or under the second low acoustic velocity film 57. In addition, the first chip 4 may also include a first protective film disposed on the first piezoelectric layer 48 and covering the plurality of first functional electrodes 140. The material of the first protective film is, for example, silicon oxide. In addition, the second chip 5 may also include a second protective film disposed on the second piezoelectric layer 58 and covering the plurality of second functional electrodes 240. The material of the second protective film is, for example, silicon oxide.

[0313] In addition, in the first chip 4, the first substrate 45 may include a first piezoelectric substrate instead of a laminated substrate including the first high-acoustic-velocity member 46, the first low-acoustic-velocity film 47, and the first piezoelectric layer 48. The first piezoelectric substrate is, for example, a lithium tantalate substrate or a lithium niobate substrate. In addition, in the second chip 5, the second substrate 55 may include a second piezoelectric substrate instead of a laminated substrate including the second high-acoustic-velocity member 56, the second low-acoustic-velocity film 57, and the second piezoelectric layer 58. The second piezoelectric substrate is, for example, a lithium tantalate substrate or a lithium niobate substrate.

[0314] In addition, the plurality of first elastic wave resonators 14 are not limited to being SAW resonators, but may also be BAW (Bulk Acoustic Wave) resonators. When the plurality of first elastic wave resonators 14 are BAW resonators, the first substrate 45 of the first chip 4 is, for example, a silicon substrate or a spinel substrate. The BAW resonator constituting the first elastic wave resonator 14 includes a first lower electrode disposed on the first principal surface 451 side of the first substrate 45, a first piezoelectric film on the first lower electrode, and a first upper electrode on the first piezoelectric film. In the first chip 4, the first upper electrode of the first elastic wave resonator 14 constitutes a first functional electrode 140. The material of the first piezoelectric film is, for example, AlN, ScAlN, LiTaO 3 、LiNbO 3or PZT (lead zirconate titanate). The BAW resonator constituting the first elastic wave resonator 14 has a cavity on the side opposite to the first piezoelectric film side in the first lower electrode. The BAW resonator constituting the first elastic wave resonator 14 is a FBAR (Film Bulk Acoustic Resonator), but is not limited thereto and may also be an SMR (Solidly Mounted Resonator).

[0315] In addition, the plurality of second elastic wave resonators 24 are not limited to being SAW resonators, but may also be BAW resonators. When the plurality of second elastic wave resonators 24 are BAW resonators, the second substrate 55 of the second chip 5 is, for example, a silicon substrate or a spinel substrate. The BAW resonator constituting the second elastic wave resonator 24 includes a second lower electrode disposed on the third principal surface 551 side of the second substrate 55, a second piezoelectric film on the second lower electrode, and a second upper electrode on the second piezoelectric film. In the second chip 5, the second upper electrode of the second elastic wave resonator 24 constitutes a second functional electrode 240. The material of the second piezoelectric film is, for example, AlN, ScAlN, LiTaO 3 、LiNbO 3 or PZT (lead zirconate titanate). The BAW resonator constituting the second elastic wave resonator 24 has a cavity on the side of the second lower electrode opposite to the second piezoelectric film. The BAW resonator constituting the second elastic wave resonator 24 is an FBAR, but is not limited thereto and may be an SMR.

[0316] Furthermore, the high-frequency modules 100 , 100 j , 100 k , etc. may have a structure not including the metal electrode layer 10 covering the resin layer 8 .

[0317] Furthermore, high-frequency modules 100, 100b, 100c, 100f, 100g, 100i, 100j, 100k, 100n, 100p, 100q, 100r, 100s, and 100t other than the high-frequency module 100a may include the shield electrode 135 of the high-frequency module 100a.

[0318] In addition, the high-frequency modules 100, 100a, 100b, 100c, 100d, 100e, 100f, 100g, 100f, 100g, 100h, 100i, 100j, 100k, 100m, 100n, 100p, 100q, 100r, 100s, 100t may also include electronic components arranged on the second main surface 92 of the mounting substrate 9. In this case, each of the plurality of external connection terminals 6 is, for example, a columnar electrode (for example, a cylindrical electrode) or a spherical bump. The material of the columnar electrode includes, for example, copper. The material of the spherical bump is, for example, gold, copper, solder, etc.

[0319] (Way)

[0320] In this specification, the following aspects are disclosed.

[0321] A high-frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100i; 100j; 100k; 100m; 100n; 100p; 100q; 100r; 100s) according to a first embodiment comprises a mounting substrate (9), a first chip (4), and a second chip (5). The mounting substrate (9) has a main surface (91). The first chip (4) includes at least one of a plurality of first elastic wave resonators (14) of a first filter (1). The first chip (4) is arranged on the mounting substrate (9). The second chip (5) includes at least one of a plurality of second elastic wave resonators (24) of a second filter (2). The second chip (5) is arranged on the side of the first chip (4) opposite to the mounting substrate (9). The first chip (4) has a first main surface (41) on the second chip (5) side and a second main surface (42) on the mounting substrate (9) side. The second chip (5) has a third main surface (51) on the first chip (4) side and a fourth main surface (52) on the opposite side to the first chip (4) side. The first circuit element (inductor L1; inductor L10; capacitor C1) associated with the first filter (1) is arranged on the second main surface (42) side of the first chip (4). The second circuit element (inductor L2; inductor L20, capacitors C21 to C24; wiring portion W25) associated with the second filter (2) is arranged on the fourth main surface (52) side of the second chip (5).

[0322] According to the high-frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100i; 100j; 100k; 100m; 100n; 100p; 100q; 100r; 100s) according to the first aspect, it is possible to suppress degradation of characteristics while achieving miniaturization.

[0323] In a high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100i; 100r; 100s) according to a second embodiment, in the first embodiment, the first filter (1) is a ladder filter having a plurality of first elastic wave resonators (14). The first filter (1) has a first input / output terminal (15) and a second input / output terminal (16). The plurality of first elastic wave resonators (14) include: a plurality of first series arm resonators (S11 to S14) provided in a first signal path (Ru1) between the first input / output terminal (15) and the second input / output terminal (16); and a plurality of first parallel arm resonators (P11 to P14) connected between the first signal path (Ru1) and a first ground. The second filter (2) is a ladder filter having a plurality of second elastic wave resonators (24). The second filter (2) also has a third input / output terminal (25) and a fourth input / output terminal (26). The plurality of second elastic wave resonators (24) include: a plurality of second series arm resonators (S21-S24) arranged in a second signal path (Ru2) between the third input / output terminal (25) and the fourth input / output terminal (26); and a plurality of second parallel arm resonators (P21-P24) connected between the second signal path (Ru2) and a second ground. The first circuit element includes a first inductor (L1) connected between one of the plurality of first parallel arm resonators (P11-P14) and the first ground. The second circuit element includes a second inductor (L2) connected between one of the plurality of second parallel arm resonators (P21-P24) and the second ground.

[0324] According to the high-frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100i; 100k; 100r; 100s) involved in the second embodiment, the isolation between the first inductor (L1) included in the first filter (1) and the second inductor (L2) included in the second filter (2) can be improved, and the degradation of the characteristics of each of the first filter (1) and the second filter (2) can be suppressed.

[0325] Regarding the high-frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100i; 100k; 100r; 100s) involved in the third embodiment, in the second embodiment, it also includes a resin layer (8) and a metal electrode layer (10). The resin layer (8) is arranged on the main surface (91) of the mounting substrate (9). The resin layer (8) covers at least a portion of the outer peripheral surface (43) of the first chip (4) and at least a portion of the outer peripheral surface (53) of the second chip (5). The metal electrode layer (10) covers at least a portion of the resin layer (8). The second inductor (L2) is connected to the second ground via the metal electrode layer (10).

[0326] According to the high-frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100i; 100k; 100r; 100s) according to the third aspect, parasitic inductance between the second inductor (L2) and the second ground can be reduced.

[0327] In a high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100i; 100k; 100m; 100n; 100r; 100s) according to a fourth embodiment, in the first embodiment, the second filter (2) is a ladder filter having a plurality of second elastic wave resonators (24). The second filter (2) further has a pair of input / output terminals (a third input / output terminal 25 and a fourth input / output terminal 26). The plurality of second elastic wave resonators (24) include a plurality of series arm resonators (S21 to S24) provided in a signal path (Ru2) between the pair of input / output terminals and a plurality of parallel arm resonators (P21 to P24) connected between the signal path (Ru2) and ground. The second circuit element includes an inductor (L2) connected between one of the plurality of parallel arm resonators (P21 to P24) and ground. When viewed from above in the thickness direction (D0) of the mounting substrate (9), the inductor (L2) overlaps with at least one parallel arm resonator among the plurality of parallel arm resonators (P21 to P24) and does not overlap with any of the plurality of series arm resonators (S21 to S24).

[0328] According to the high-frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100i; 100k; 100m; 100n; 100r; 100s) involved in the fourth embodiment, the attenuation characteristics of the second filter (2) can be improved compared to the case where the second inductor (L2) of the second filter (2) overlaps with at least one of the plurality of series arm resonators (S21 to S24) when viewed from above in the thickness direction (D0) of the mounting substrate (9).

[0329] The high-frequency module (100a) according to the fifth embodiment further comprises a shielding electrode (135) in the first embodiment. The shielding electrode (135) is arranged between the first chip (4) and the second chip (5). The first circuit element includes a first inductor (L1). The second circuit element includes a second inductor (L2). The first inductor (L1) and the second inductor (L2) overlap with the shielding electrode (135) in the thickness direction (D0) of the mounting substrate (9).

[0330] According to the high-frequency module (100a) according to the fifth aspect, the isolation between the first inductor (L1) and the second inductor (L2) can be improved.

[0331] Regarding the high-frequency module (100b; 100c) involved in the sixth embodiment, in any one of the first embodiment, the second embodiment, the fourth embodiment, and the fifth embodiment, it further includes a metal member (150), an insulating layer (7), a resin layer (8), and a metal electrode layer (10). The metal member (150) is arranged on the fourth main surface (52) of the second chip (5). The insulating layer (7) is arranged on the fourth main surface (52) of the second chip (5). The insulating layer (7) covers at least a portion of the outer peripheral surface (153) of the metal member (150) and at least a portion of the second circuit element (inductor L2; capacitors C21 to C24; wiring portion W25). The resin layer (8) is arranged on the main surface (91) of the mounting substrate (9). The resin layer (8) covers at least a portion of the outer peripheral surface (43) of the first chip (4), at least a portion of the outer peripheral surface (53) of the second chip (5), and at least a portion of the outer peripheral surface (73) of the insulating layer (7). The metal electrode layer (10) covers at least a portion of the insulating layer (7) and at least a portion of the resin layer (8). The metal component (150) is in contact with the metal electrode layer (10).

[0332] According to the high-frequency module (100b; 100c) according to the sixth aspect, it is possible to improve heat dissipation.

[0333] In the high-frequency module (100c) involved in the seventh embodiment, in any one of the first embodiment, the second embodiment, the fourth embodiment, and the fifth embodiment, a metal member (150), an insulating layer (7), a resin layer (8), and a metal electrode layer (10) are further provided. The metal member (150) is arranged on the fourth main surface (52) of the second chip (5). The insulating layer (7) is arranged on the fourth main surface (52) of the second chip (5). The insulating layer (7) covers at least a portion of the outer peripheral surface (153) of the metal member (150) and at least a portion of the second circuit element (inductor L2; capacitors C21 to C24; wiring portion W25). The resin layer (8) is arranged on the main surface (91) of the mounting substrate (9). The resin layer (8) covers at least a portion of the outer peripheral surface (43) of the first chip (4), at least a portion of the outer peripheral surface (53) of the second chip (5), and at least a portion of the outer peripheral surface (73) of the insulating layer (7). The metal electrode layer (10) covers at least a portion of the insulating layer (7) and at least a portion of the resin layer (8). The metal component (150) is connected to the metal electrode layer (10). The first chip (4) has a plurality of first terminal electrodes (T1) connected to the mounting substrate (9) and a plurality of second terminal electrodes (T2) connected to the second chip (5). The second chip (5) has a plurality of third terminal electrodes (T3) connected to the plurality of second terminal electrodes (T2). When viewed from above in the thickness direction (D0) of the mounting substrate (9), the metal component (150) is larger than each of the plurality of third terminal electrodes (T3).

[0334] According to the high-frequency module (100c) according to the seventh aspect, heat dissipation can be improved.

[0335] In the high-frequency module (100f) according to the eighth aspect, in the first aspect, the second circuit element includes an inductor (L2) arranged on the fourth main surface (52) of the second chip (5). The winding axis (A2) of the inductor (L2) is parallel to the fourth main surface (52) of the second chip (5).

[0336] According to the high-frequency module (100f) according to the eighth aspect, it is possible to suppress a decrease in the Q value of the second inductor (L2), and to suppress a decrease in the characteristics of the second filter (2).

[0337] Regarding the high-frequency module (100d) involved in the ninth embodiment, in the first embodiment, it also includes a resin layer (8) and a metal electrode layer (10). The resin layer (8) is arranged on the main surface (91) of the mounting substrate (9). The resin layer (8) covers at least a portion of the outer peripheral surface (43) of the first chip (4) and at least a portion of the outer peripheral surface (53) of the second chip (5). The metal electrode layer (10) covers at least a portion of the resin layer (8) and at least a portion of the fourth main surface (52) of the second chip (5). The second filter (2) is a ladder-type filter having a plurality of second elastic wave resonators (24). The second filter (2) also has a pair of input-output terminals (third input-output terminal 25, fourth input-output terminal 26). The plurality of second elastic wave resonators (24) include a plurality of series arm resonators (S21 to S24) arranged in a signal path (Ru2) between a pair of input and output terminals and a plurality of parallel arm resonators (P21 to P24) connected between the signal path (Ru2) and ground. The second circuit element includes an inductor (L2) connected between one of the plurality of parallel arm resonators (P21 to P24) and ground. The metal electrode layer (10) is in contact with a portion of the fourth main surface (52) of the second chip (5). The inductor (L2) is arranged on the fourth main surface (52) of the second chip (5) and is connected to the ground via the metal electrode layer (10).

[0338] According to the high-frequency module (100d) involved in the ninth aspect, the metal electrode layer (10) is in contact with a portion of the fourth main surface (52) of the second chip (5), so that heat dissipation can be improved and degradation of characteristics can be suppressed. In addition, in the high-frequency module (100d), the second inductor (L2) is arranged on the fourth main surface (52) of the second chip (5) and is connected to the ground via the metal electrode layer (10), so that parasitic inductance can be reduced and degradation of characteristics can be suppressed.

[0339] Regarding the high-frequency module (100h) involved in the tenth embodiment, in the first embodiment, it also includes an insulating layer (7), a via conductor (250), a resin layer (8), and a metal electrode layer (10). The insulating layer (7) is arranged on the fourth main surface (52) of the second chip (5) and covers at least a portion of the second circuit element. The via conductor (250) penetrates the insulating layer (7) and is connected to the second circuit element. The resin layer (8) is arranged on the main surface (91) of the mounting substrate (9). The resin layer (8) covers at least a portion of the outer peripheral surface (43) of the first chip (4), at least a portion of the outer peripheral surface (53) of the second chip (5), and at least a portion of the outer peripheral surface (73) of the insulating layer (7). The metal electrode layer (10) covers at least a portion of the insulating layer (7), a portion of the via conductor (250), and at least a portion of the resin layer (8). The second filter (2) is a ladder-type filter having a plurality of second elastic wave resonators (24). The second filter (2) further has a pair of input-output terminals (a third input-output terminal 25 and a fourth input-output terminal 26). The plurality of second elastic wave resonators (24) include a plurality of series arm resonators (S21 to S24) provided in a signal path (Ru2) between the pair of input-output terminals and a plurality of parallel arm resonators (P21 to P24) connected between the signal path (Ru2) and ground. The second circuit element includes an inductor (L2) connected between one of the plurality of parallel arm resonators (P21 to P24) and ground. The second circuit element is arranged in a recess (54) formed on the fourth main surface (52) of the second chip (5).

[0340] According to the high-frequency module (100h) according to the tenth aspect, it is possible to achieve a lower height.

[0341] In the high-frequency module (100j) involved in the eleventh embodiment, in the first embodiment, the second filter (2) is a ladder-type filter having a plurality of second elastic wave resonators (24). The second filter (2) further has a pair of input-output terminals (a third input-output terminal 25 and a fourth input-output terminal 26). The plurality of second elastic wave resonators (24) include a plurality of series arm resonators (S21 to S24) provided in a signal path (Ru2) between the pair of input-output terminals and a plurality of parallel arm resonators (P21 to P24) connected between the signal path (Ru2) and ground. The second circuit element includes an inductor (L20) connected in parallel to one (the series arm resonator S24) of the plurality of series arm resonators (S21 to S24). When viewed from above in the thickness direction (D0) of the mounting substrate (9), the inductor (L20) overlaps at least one of two parallel arm resonators (P23, P24) directly connected to the inductor (L20) among the plurality of parallel arm resonators (P21-P24) and the one (the series arm resonator S24) among the plurality of series arm resonators (S21-S24), and does not overlap any of the remaining second elastic wave resonators (24) among the plurality of second elastic wave resonators (24).

[0342] According to the high-frequency module (100j) involved in the eleventh aspect, when viewed from above in the thickness direction (D0) of the mounting substrate (9), the inductor (L20) overlaps at least one of the two parallel arm resonators (P23, P24) and one of the plurality of series arm resonators (series arm resonator S24), and does not overlap any of the remaining second elastic wave resonators (24) among the plurality of second elastic wave resonators (24), thereby achieving miniaturization while suppressing degradation of attenuation.

[0343] In the high-frequency module (100k) involved in the twelfth embodiment, in the first embodiment, the second filter (2) is a ladder-type filter having a plurality of second elastic wave resonators (24). The second filter (2) further has a pair of input-output terminals (a third input-output terminal 25 and a fourth input-output terminal 26). The plurality of second elastic wave resonators (24) include a plurality of series arm resonators (S21 to S24) provided in a signal path (Ru2) between the pair of input-output terminals and a plurality of parallel arm resonators (P21 to P24) connected between the signal path (Ru2) and ground. The second circuit element includes a first conductor pattern portion (161) as a part of an inductor (L20) connected in parallel to one of the plurality of series arm resonators (S21 to S24). The remaining portion of the inductor (L20) includes a second conductor pattern portion (162) arranged on the third main surface (51) of the second chip (5) and a conductor portion (163) penetrating the second chip (5) in the thickness direction and connecting the first conductor pattern portion (161) and the second conductor pattern portion (162).

[0344] According to the high-frequency module (100k) according to the twelfth aspect, the inductance of the inductor (L20) can be further increased.

[0345] In the high-frequency module (100m) according to the 13th aspect, in the first aspect, the first filter (1) is a ladder-type filter having a plurality of first elastic wave resonators (14). The first filter (1) further has a first input / output terminal (15) and a second input / output terminal (16). The plurality of first elastic wave resonators (14) include a plurality of first series arm resonators (S11 to S14) of a first signal path (Ru1) provided between the first input / output terminal (15) and the second input / output terminal (16), and a plurality of first parallel arm resonators (P11 to P14) connected between the first signal path (Ru1) and a first ground. The second filter (2) is a ladder-type filter having a plurality of second elastic wave resonators (24). The second filter (2) further has a third input / output terminal (25) and a fourth input / output terminal (26). The plurality of second elastic wave resonators (24) include a plurality of second series arm resonators (S21 to S24) provided in a second signal path (Ru2) between a third input / output terminal (25) and a fourth input / output terminal (26) and a plurality of second parallel arm resonators (P21 to P24) connected between the second signal path (Ru2) and a second ground. The first circuit element includes a first inductor (inductor L10) connected in parallel to one of the plurality of first series arm resonators (S11 to S14). The second circuit element includes a second inductor (L2) connected between one of the plurality of second parallel arm resonators (P21 to P24) and the ground.

[0346] According to the high-frequency module (100m) of the thirteenth aspect, the isolation between the first inductor (inductor L10) and the second inductor (L2) can be improved, and the degradation of the characteristics of the first filter (1) and the second filter (2) can be suppressed.

[0347] In the high-frequency module (100n) according to the fourteenth aspect, in the first aspect, the first filter (1) is a ladder-type filter having a plurality of first elastic wave resonators (14). The first filter (1) further has a first input / output terminal (15) and a second input / output terminal (16). The plurality of first elastic wave resonators (14) include a plurality of first series arm resonators (S11 to S14) of a first signal path (Ru1) provided between the first input / output terminal (15) and the second input / output terminal (16), and a plurality of first parallel arm resonators (P11 to P14) connected between the first signal path (Ru1) and a first ground. The second filter (2) is a ladder-type filter having a plurality of second elastic wave resonators (24). The second filter (2) further has a third input / output terminal (25) and a fourth input / output terminal (26). The plurality of second elastic wave resonators (24) include a plurality of second series arm resonators (S21 to S24) provided in a second signal path (Ru2) between a third input / output terminal (25) and a fourth input / output terminal (26), and a plurality of second parallel arm resonators (P21 to P24) connected between the second signal path (Ru2) and a second ground. The first circuit element includes a capacitor (C1) connected between a first series arm resonator (S14) closest to the second input / output terminal (16) among the plurality of first series arm resonators (S11 to S14) and the second input / output terminal (16). The second circuit element includes an inductor (L2) connected between one of the plurality of second parallel arm resonators (P21 to P24) and the second ground.

[0348] According to the high-frequency module (100n) according to the fourteenth aspect, it is possible to improve the isolation between the capacitor (C1) and the inductor (L2).

[0349] In the high-frequency module (100p) involved in the fifteenth embodiment, in the first embodiment, the second filter (2) is a ladder-type filter having a plurality of second elastic wave resonators (24). The second filter (2) further has a pair of input-output terminals (a third input-output terminal 25 and a fourth input-output terminal 26). The plurality of second elastic wave resonators (24) include a plurality of series arm resonators (S21 to S24) provided in a signal path (Ru2) between the pair of input-output terminals and a plurality of parallel arm resonators (P21 to P24) connected between the signal path (Ru2) and ground. The second circuit element includes a capacitor connected in parallel to one of the plurality of parallel arm resonators (P21 to P24).

[0350] According to the high-frequency module (100p) according to the fifteenth aspect, it is possible to suppress degradation of the characteristics of the second filter (2) while narrowing the passband of the second filter (2).

[0351] In the high-frequency module (100q) involved in the 16th embodiment, in the first embodiment, the second filter (2) is a ladder-type filter having a plurality of second elastic wave resonators (24). The second filter (2) further has a pair of input-output terminals (a third input-output terminal 25 and a fourth input-output terminal 26). The plurality of second elastic wave resonators (24) include a plurality of series arm resonators (S21 to S24) provided in a signal path (Ru2) between the pair of input-output terminals and a plurality of parallel arm resonators (P21 to P24) connected between the signal path (Ru2) and ground. The second circuit element includes a wiring portion (W25) that connects one of the plurality of parallel arm resonators (P21 to P24) to a path between another parallel arm resonator of the plurality of parallel arm resonators (P21 to P24) and ground (a second ground terminal 27A).

[0352] According to the high-frequency module (100q) according to the sixteenth aspect, it is possible to suppress degradation of characteristics while achieving miniaturization.

[0353] In a high-frequency module (100r) according to a seventeenth aspect, in any one of the first to sixteenth aspects, the first chip (4) includes one or more second elastic wave resonators (24) different from the at least one of the plurality of second elastic wave resonators (24). The second chip (5) includes one or more first elastic wave resonators (14) different from the at least one of the plurality of first elastic wave resonators (14).

[0354] According to the high-frequency module (100r) according to the seventeenth aspect, it is possible to suppress degradation of the characteristics of the first filter (1) and the second filter (2) while achieving miniaturization.

[0355] In the high-frequency module (100s) according to the eighteenth aspect, in any one of the first to sixteenth aspects, the first chip (4) includes one or more second elastic wave resonators (24) different from the at least one of the plurality of second elastic wave resonators (24), and the second chip (5) includes a plurality of third elastic wave resonators (34) of the third filter (3).

[0356] According to the high-frequency module (100s) according to the eighteenth aspect, it is possible to suppress degradation of characteristics while achieving miniaturization.

[0357] In the high-frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100j; 100k; 100m; 100n; 100p; 100q; 100r; 100s) involved in the 19th embodiment, in any one of the first to eighteenth embodiments, the first circuit element (inductor L1; inductor L10; capacitor C1) is provided on a mounting substrate (9).

[0358] According to the high-frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f; 100g; 100h; 100j; 100k; 100m; 100n; 100p; 100q; 100r; 100s) involved in the 19th embodiment, the isolation between the first circuit element (inductor L1; inductor L10; capacitor C1) and the second circuit element (inductor L2; inductor L20, capacitors C21 to C24; wiring portion W25) can be further improved.

[0359] The high-frequency module (100t) according to the twentieth embodiment comprises a mounting substrate (9), a first chip (4), a second chip (5), an electronic component (12), a wiring portion (W22), and a resin layer (8). The mounting substrate (9) has a main surface (91). The first chip (4) includes at least one of a plurality of first elastic wave resonators (14) of a first filter (1). The first chip (4) is arranged on the main surface (91) of the mounting substrate (9). The second chip (5) includes at least one of a plurality of second elastic wave resonators (24) of a second filter (2). The second chip (5) is arranged on the side of the first chip (4) opposite to the mounting substrate (9). The electronic component (12) is arranged on the main surface (91) of the mounting substrate (9). The electronic component (12) has a first electrode (121) located on the main surface (91) side of the mounting substrate (9) and a second electrode (122) located on the side opposite to the main surface (91) side. The wiring portion (W22) connects the second filter (2) and the electronic component (12). The first chip (4) has a first main surface (41) on the second chip (5) side and a second main surface (42) on the mounting substrate (9) side. The second chip (5) has a third main surface (51) on the first chip (4) side and a fourth main surface (52) on the side opposite to the first chip (4) side. A circuit element (inductor L1) related to the first filter (1) is arranged on the second main surface (42) side of the first chip (4). The resin layer (8) is arranged on the main surface (91) of the mounting substrate (9). The resin layer (8) covers at least a portion of the outer peripheral surface (43) of the first chip (4), at least a portion of the outer peripheral surface (53) of the second chip (5), and at least a portion of the outer peripheral surface (123) of the electronic component (12). The wiring portion (W22) is a conductor pattern portion. The wiring portion (W22) is provided across the fourth main surface (52) of the second chip (5), the main surface (81) of the resin layer (8) on the side opposite to the mounting substrate (9), and the second electrode (122) of the electronic component (12).

[0360] According to the high-frequency module (100t) according to the twentieth aspect, it is possible to suppress degradation of characteristics while achieving miniaturization.

[0361] Description of Reference Numerals

[0362] 1: 1st filter;

[0363] 14: 1st elastic wave resonator;

[0364] 140: first functional electrode;

[0365] 15: 1st input and output terminal;

[0366] 16: Second input and output terminal;

[0367] 17: The first ground terminal;

[0368] 18: 1st connection terminal;

[0369] 19: terminal;

[0370] 2: 2nd filter;

[0371] 24: 2nd elastic wave resonator;

[0372] 240: second functional electrode;

[0373] 25: The third input and output terminal;

[0374] 26: 4th input and output terminal;

[0375] 27: Second ground terminal;

[0376] 27A: Second grounding terminal;

[0377] 27B: Second grounding terminal;

[0378] 28: Second connection terminal;

[0379] 28A: 2nd connection terminal;

[0380] 28B: 2nd connecting terminal;

[0381] 29: Connecting terminal;

[0382] 29A: 1st connecting electrode;

[0383] 29B: second connecting electrode;

[0384] 3: 3rd filter;

[0385] 34: 3rd elastic wave resonator;

[0386] 4: 1st chip;

[0387] 40: outer edge;

[0388] 41: 1st main surface;

[0389] 42: 2nd main surface;

[0390] 43: outer peripheral surface;

[0391] 45: 1st substrate;

[0392] 451: 1st main surface;

[0393] 452: 2nd main surface;

[0394] 46: The first high-sonic velocity component;

[0395] 47: 1st low sound velocity membrane;

[0396] 48: first piezoelectric layer;

[0397] 49: through wiring portion;

[0398] 400: first bonding metal layer;

[0399] 5: 2nd chip;

[0400] 50: outer edge;

[0401] 51: The third main surface;

[0402] 52: The 4th main surface;

[0403] 53: outer peripheral surface;

[0404] 54: concave part;

[0405] 55: 2nd substrate;

[0406] 551: 3rd main surface;

[0407] 552: 4th main surface;

[0408] 56: The second high-sonic velocity component;

[0409] 57: 2nd low sound velocity membrane;

[0410] 58: second piezoelectric layer;

[0411] 59A: through wiring portion;

[0412] 59B: through wiring portion;

[0413] 500: second bonding metal layer;

[0414] 6: External connection terminal;

[0415] 7: Insulation layer;

[0416] 70: outer edge;

[0417] 71: Main side;

[0418] 73: outer peripheral surface;

[0419] 75: opening;

[0420] 7A: insulation layer;

[0421] 8: resin layer;

[0422] 81: Main side;

[0423] 83: outer peripheral surface;

[0424] 9: Install the substrate;

[0425] 91: Main side (1st main side);

[0426] 92: 2nd main side;

[0427] 93: outer peripheral surface;

[0428] 95: conductor pattern portion;

[0429] 96: conductor part;

[0430] 10: Metal electrode layer;

[0431] 111: opening;

[0432] 112: opening edge;

[0433] 113: opening;

[0434] 114: opening edge;

[0435] 11: Electronic components;

[0436] 12: Electronic components;

[0437] 121: 1st electrode;

[0438] 122: second electrode;

[0439] 123: outer peripheral surface;

[0440] 13: Electronic components;

[0441] 131: first electrode;

[0442] 132: second electrode;

[0443] 100, 100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i, 100j, 100k, 100m, 100n, 100p, 100q, 100r, 100s: high frequency module;

[0444] 134: hollow space;

[0445] 135: shielding electrode;

[0446] 1351: 1st shielding part;

[0447] 1352: 2nd shielding part;

[0448] 138: Hollow;

[0449] 150: Metal components;

[0450] 151: 1st end surface;

[0451] 152: 2nd end surface;

[0452] 153: outer peripheral surface;

[0453] 155: outer edge;

[0454] 160: conductor pattern portion;

[0455] 161: first conductor pattern portion;

[0456] 162: second conductor pattern portion;

[0457] 163: conductor part;

[0458] 170: conductor pattern portion;

[0459] 175: outer edge;

[0460] 180: joint;

[0461] 211: through wiring portion;

[0462] 221-227: via conductor;

[0463] 231-234: 1st conductor part;

[0464] 241-244: second conductor part;

[0465] 250: via conductor;

[0466] 251: Connect via conductors;

[0467] 291: through wiring portion;

[0468] A2: winding axis;

[0469] C1: capacitor;

[0470] C21: capacitor (second circuit element);

[0471] C22: capacitor (second circuit element);

[0472] C23: capacitor (second circuit element);

[0473] C24: capacitor (second circuit element);

[0474] D0: thickness direction;

[0475] D1: Direction 1;

[0476] D2: direction 2;

[0477] Dp1: duplexer;

[0478] L1: Inductor (first inductor, first circuit element);

[0479] L2: Inductor (second inductor, second circuit element);

[0480] L10: Inductor (1st circuit element);

[0481] L20: Inductor (second circuit element);

[0482] P11~P14: parallel arm resonator (1st parallel arm resonator);

[0483] P21~P24: parallel arm resonator (second parallel arm resonator);

[0484] Ru1: signal path (1st signal path);

[0485] Ru11: parallel arm path;

[0486] Ru12: parallel arm path;

[0487] Ru13: parallel arm path;

[0488] Ru14: parallel arm path;

[0489] Ru2: signal path (second signal path);

[0490] Ru21: parallel arm path;

[0491] Ru22: parallel arm path;

[0492] Ru23: parallel arm path;

[0493] Ru24: parallel arm path;

[0494] S11-S14: series arm resonator (first series arm resonator);

[0495] S21-S24: series arm resonator (second series arm resonator);

[0496] ST1: stacked structure;

[0497] T1: 1st terminal electrode;

[0498] T2: second terminal electrode;

[0499] T3: 3rd terminal electrode;

[0500] T4: 4th terminal electrode;

[0501] W20: Wiring department;

[0502] W22: Wiring department;

[0503] W25: Wiring department.

Claims

1. A high frequency module, comprising: A mounting substrate having a main surface; a first chip including at least one of the plurality of first elastic wave resonators of the first filter and arranged on the mounting substrate; and a second chip including at least one of the plurality of second elastic wave resonators of the second filter and arranged on the side of the first chip opposite to the mounting substrate side; The first chip has a first main surface on the second chip side and a second main surface on the mounting substrate side. The second chip has a third main surface on the first chip side and a fourth main surface on the opposite side to the first chip side. A first circuit element related to the first filter is arranged on the second main surface side of the first chip, A second circuit element related to the second filter is arranged on the fourth main surface side of the second chip.

2. The high frequency module according to claim 1, wherein: The first filter is a ladder filter including the plurality of first elastic wave resonators. The first filter further comprises a first input / output terminal and a second input / output terminal. The plurality of first elastic wave resonators include: a plurality of first series arm resonators provided in a first signal path between the first input / output terminal and the second input / output terminal; as well as A plurality of first parallel arm resonators are connected between the first signal path and the first ground, The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further comprises a third input / output terminal and a fourth input / output terminal. The plurality of second elastic wave resonators include: a plurality of second series arm resonators provided in a second signal path between the third input / output terminal and the fourth input / output terminal; as well as a plurality of second parallel arm resonators connected between the second signal path and the second ground; The first circuit element includes: a first inductor connected between one of the plurality of first parallel arm resonators and the first ground; The second circuit element includes a second inductor connected between one of the plurality of second parallel arm resonators and the second ground.

3. The high frequency module according to claim 2, wherein: Also available: a resin layer disposed on the main surface of the mounting substrate and covering at least a portion of an outer peripheral surface of the first chip and at least a portion of an outer peripheral surface of the second chip; as well as a metal electrode layer covering at least a portion of the resin layer, The second inductor is connected to the second ground via the metal electrode layer.

4. The high frequency module according to claim 1, wherein: The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further has a pair of input and output terminals. The plurality of second elastic wave resonators include: a plurality of series arm resonators disposed in a signal path between the pair of input and output terminals; and a plurality of parallel arm resonators connected between the signal path and ground, The second circuit element includes an inductor connected between one of the plurality of parallel arm resonators and the ground. The inductor overlaps with at least one parallel arm resonator among the plurality of parallel arm resonators and does not overlap with any of the plurality of series arm resonators in a plan view in a thickness direction of the mounting substrate.

5. The high frequency module according to claim 1, wherein: Also available: a shielding electrode disposed between the first chip and the second chip, The first circuit element includes a first inductor. The second circuit element includes a second inductor. The first inductor and the second inductor overlap the shield electrode in the thickness direction of the mounting substrate.

6. The high frequency module according to any one of claims 1, 2, 4 and 5, wherein: Also available: a metal member disposed on the fourth main surface of the second chip; an insulating layer disposed on the fourth main surface of the second chip and covering at least a portion of the outer peripheral surface of the metal member and at least a portion of the second circuit element; a resin layer disposed on the main surface of the mounting substrate and covering at least a portion of an outer peripheral surface of the first chip, at least a portion of an outer peripheral surface of the second chip, and at least a portion of an outer peripheral surface of the insulating layer; as well as a metal electrode layer covering at least a portion of the insulating layer and at least a portion of the resin layer, The metal component is in contact with the metal electrode layer.

7. The high frequency module according to any one of claims 1, 2, 4 and 5, wherein: Also available: a metal member disposed on the fourth main surface of the second chip; an insulating layer disposed on the fourth main surface of the second chip and covering at least a portion of the outer peripheral surface of the metal member and at least a portion of the second circuit element; a resin layer disposed on the main surface of the mounting substrate and covering at least a portion of an outer peripheral surface of the first chip, at least a portion of an outer peripheral surface of the second chip, and at least a portion of an outer peripheral surface of the insulating layer; as well as a metal electrode layer covering at least a portion of the insulating layer and at least a portion of the resin layer, The metal component is in contact with the metal electrode layer, The first chip further includes a plurality of first terminal electrodes connected to the mounting substrate and a plurality of second terminal electrodes connected to the second chip. The second chip further includes a plurality of third terminal electrodes connected to the plurality of second terminal electrodes. The metal member is larger than each of the plurality of third terminal electrodes when viewed from above in the thickness direction of the mounting substrate.

8. The high frequency module according to claim 1, wherein: The second circuit element includes an inductor disposed on the fourth main surface of the second chip. A winding axis of the inductor is parallel to the fourth main surface of the second chip.

9. The high frequency module according to claim 1, wherein: Also available: a resin layer disposed on the main surface of the mounting substrate and covering at least a portion of an outer peripheral surface of the first chip and at least a portion of an outer peripheral surface of the second chip; and a metal electrode layer covering at least a portion of the resin layer and at least a portion of the fourth main surface of the second chip, The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further has a pair of input and output terminals. The plurality of second elastic wave resonators include: a plurality of series arm resonators disposed in a signal path between the pair of input and output terminals; and a plurality of parallel arm resonators connected between the signal path and ground, The second circuit element includes an inductor connected between one of the plurality of parallel arm resonators and the ground. The metal electrode layer is in contact with a portion of the fourth main surface of the second chip. The inductor is disposed on the fourth main surface of the second chip and is connected to the ground via the metal electrode layer.

10. The high frequency module according to claim 1, wherein: Also available: an insulating layer, arranged on the fourth main surface of the second chip and covering at least a portion of the second circuit element; a via conductor penetrating the insulating layer and connected to the second circuit element; a resin layer disposed on the main surface of the mounting substrate and covering at least a portion of an outer peripheral surface of the first chip, at least a portion of an outer peripheral surface of the second chip, and at least a portion of an outer peripheral surface of the insulating layer; as well as a metal electrode layer covering at least a portion of the insulating layer, a portion of the via conductor, and at least a portion of the resin layer, The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further has a pair of input and output terminals. The plurality of second elastic wave resonators include: a plurality of series arm resonators disposed in a signal path between the pair of input and output terminals; and a plurality of parallel arm resonators connected between the signal path and ground, The second circuit element includes an inductor connected between one of the plurality of parallel arm resonators and the ground. The second circuit element is arranged in a recess formed on the fourth main surface of the second chip.

11. The high frequency module according to claim 1, wherein: The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further has a pair of input and output terminals. The plurality of second elastic wave resonators include: a plurality of series arm resonators disposed in a signal path between the pair of input and output terminals; and a plurality of parallel arm resonators connected between the signal path and ground, The second circuit element includes an inductor connected in parallel with one of the plurality of series arm resonators. In a plan view in the thickness direction of the mounting substrate, the inductor overlaps at least one of two parallel arm resonators directly connected to the inductor among the plurality of parallel arm resonators and the one of the plurality of series arm resonators, and does not overlap any of the remaining second elastic wave resonators among the plurality of second elastic wave resonators.

12. The high frequency module according to claim 1, wherein: The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further has a pair of input and output terminals. The plurality of second elastic wave resonators include: a plurality of series arm resonators disposed in a signal path between the pair of input and output terminals; as well as a plurality of parallel arm resonators connected between the signal path and ground, The second circuit element includes a first conductor pattern portion as a part of an inductor connected in parallel to one of the plurality of series arm resonators. The remainder of the inductor comprises: a second conductor pattern portion arranged on the third main surface of the second chip; and The conductor portion penetrates the second chip in a thickness direction and connects the first conductor pattern portion and the second conductor pattern portion.

13. The high frequency module according to claim 1, wherein: The first filter is a ladder filter including the plurality of first elastic wave resonators. The first filter further comprises a first input / output terminal and a second input / output terminal. The plurality of first elastic wave resonators include: a plurality of first series arm resonators provided in a first signal path between the first input / output terminal and the second input / output terminal; as well as A plurality of first parallel arm resonators are connected between the first signal path and the first ground, The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further comprises a third input / output terminal and a fourth input / output terminal. The plurality of second elastic wave resonators include: a plurality of second series arm resonators provided in a second signal path between the third input / output terminal and the fourth input / output terminal; as well as a plurality of second parallel arm resonators connected between the second signal path and the second ground; The first circuit element includes: a first inductor connected in parallel with one of the plurality of first series arm resonators; The second circuit element includes a second inductor connected between one of the plurality of second parallel arm resonators and ground.

14. The high frequency module according to claim 1, wherein: The first filter is a ladder filter including the plurality of first elastic wave resonators. The first filter further comprises a first input / output terminal and a second input / output terminal. The plurality of first elastic wave resonators include: a plurality of first series arm resonators provided in a first signal path between the first input / output terminal and the second input / output terminal; as well as A plurality of first parallel arm resonators are connected between the first signal path and the first ground, The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further comprises a third input / output terminal and a fourth input / output terminal. The plurality of second elastic wave resonators include: a plurality of second series arm resonators provided in a second signal path between the third input / output terminal and the fourth input / output terminal; as well as a plurality of second parallel arm resonators connected between the second signal path and the second ground; The first circuit element includes a capacitor connected between a first series arm resonator closest to the second input / output terminal among the plurality of first series arm resonators and the second input / output terminal; The second circuit element includes an inductor connected between one of the plurality of second parallel arm resonators and the second ground.

15. The high frequency module according to claim 1, wherein: The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further has a pair of input and output terminals. The plurality of second elastic wave resonators include: a plurality of series arm resonators disposed in a signal path between the pair of input and output terminals; and a plurality of parallel arm resonators connected between the signal path and ground, The second circuit element includes a capacitor connected in parallel with one of the plurality of parallel arm resonators.

16. The high frequency module according to claim 1, wherein: The second filter is a ladder filter including the plurality of second elastic wave resonators. The second filter further has a pair of input and output terminals. The plurality of second elastic wave resonators include: a plurality of series arm resonators disposed in a signal path between the pair of input and output terminals; and a plurality of parallel arm resonators connected between the signal path and ground, The second circuit element includes a wiring portion that connects one of the plurality of parallel arm resonators to a path between another parallel arm resonator among the plurality of parallel arm resonators and the ground.

17. The high frequency module according to any one of claims 1 to 16, wherein: The first chip includes one or more second elastic wave resonators different from the at least one second elastic wave resonator among the plurality of second elastic wave resonators. The second chip includes one or more first elastic wave resonators different from the at least one of the plurality of first elastic wave resonators.

18. The high frequency module according to any one of claims 1 to 16, wherein: The first chip includes one or more second elastic wave resonators different from the at least one second elastic wave resonator among the plurality of second elastic wave resonators. The second chip further includes a plurality of third elastic wave resonators of a third filter.

19. The high frequency module according to any one of claims 1 to 18, wherein: The first circuit element is provided on the mounting substrate.

20. A high frequency module, comprising: A mounting substrate having a main surface; a first chip including at least one of the plurality of first elastic wave resonators of the first filter and arranged on the main surface of the mounting substrate; a second chip including at least one of the plurality of second elastic wave resonators of a second filter and arranged on a side of the first chip opposite to the mounting substrate side; an electronic component disposed on the main surface of the mounting substrate and having a first electrode located on the main surface side of the mounting substrate and a second electrode located on the side opposite to the main surface side; a wiring section connecting the second filter and the electronic component; as well as Resin layer, The first chip has a first main surface on the second chip side and a second main surface on the mounting substrate side. The second chip has a third main surface on the first chip side and a fourth main surface on the opposite side to the first chip side. The circuit elements related to the first filter are arranged on the second main surface side of the first chip. The resin layer is arranged on the main surface of the mounting substrate and covers at least a portion of the outer peripheral surface of the first chip, at least a portion of the outer peripheral surface of the second chip, and at least a portion of the outer peripheral surface of the electronic component. The wiring portion includes a conductor pattern portion provided across the fourth main surface of the second chip, a main surface of the resin layer on the opposite side to the mounting substrate, and the second electrode of the electronic component.

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