A wafer cleaning device

By spraying photocatalyst steam and irradiating ultraviolet rays to activate the photocatalyst, the problem of organic compounds remaining on the back of the wafer is solved, and the wafer is thoroughly cleaned and efficiently cleaned, ensuring the smooth progress of the subsequent process.

CN119216326BActive Publication Date: 2025-07-08ZHICHENG SEMICON EQUIP TECH (KUNSHAN) CO LTD
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Patent Information

Application Number
CN202411745764.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-02
Publication Date
2025-07-08
Estimated Expiration
2044-12-02

AI Technical Summary

Technical Problem

After using organic compound cleaning liquid in existing wafer cleaning equipment, organic compounds remain on the back of the wafer, resulting in the formation of watermarks and affecting the progress of subsequent processes.

Method used

The spraying device is used to spray photocatalyst steam on the wafer, and the photocatalyst is irradiated with ultraviolet rays through the light device to activate the photocatalyst, decompose the organic compounds on the back of the wafer to form carbon dioxide and water.

Benefits of technology

The organic compound residue on the back of the wafer is completely removed, and the watermark formation is avoided, which improves the cleanliness and yield of the wafer, reduces the cost of waste liquid treatment, and meets environmental protection requirements.

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Abstract

The present invention provides a wafer cleaning device, comprising: a positioning device for holding a wafer in a horizontal posture and driving the wafer to rotate along the axis, a spraying device for spraying photocatalyst vapor onto the wafer, and a lighting device; the lighting device is disposed on the positioning device and forms a lighting portion exposed to the back surface of the wafer, and the lighting portion irradiates the back surface of the wafer with light containing ultraviolet rays to activate the photocatalyst, and the photocatalyst removes organic compounds on the back surface of the wafer. Through the spraying device and the lighting device, the present application realizes the thorough decomposition and removal of the residual organic compounds on the back surface of the wafer.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular, to a wafer cleaning device. Background Art

[0002] Wafer cleaning is an important process step in semiconductor manufacturing, aiming to remove contaminants such as metal ions, organic substances, and particulate matter generated by the contact of the wafer with various organic substances, particles, and metals during processing, forming, and polishing. When cleaning the wafer, not only the surface of the wafer needs to be cleaned, but also the back surface of the wafer needs to be cleaned. During the wafer cleaning process, commonly used cleaning liquids include inorganic acids, alkaline solutions, deionized water, and various organic compound solutions. Organic compound cleaning liquids play an important role in semiconductor manufacturing due to their unique properties.

[0003] In the prior art, after the device for cleaning the wafer uses the organic compound cleaning liquid to complete the cleaning of the front surface and / or the back surface of the wafer, the organic compound cleaning liquid will remain on the back surface of the wafer, and during the drying process after cleaning, the organic compound will form water marks on the back surface of the wafer, affecting the subsequent process.

[0004] In view of this, it is necessary to improve the device for cleaning the wafer in the prior art to solve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to disclose a wafer cleaning device, which is used to solve various defects existing in the device for cleaning the wafer in the prior art, especially to completely decompose and remove the organic compounds remaining on the back surface of the wafer.

[0006] To achieve the above purpose, the present invention provides a wafer cleaning device, including: a positioning device for holding the wafer in a horizontal posture and driving the wafer to rotate along the axis, a spraying device for spraying photocatalyst vapor onto the wafer, and a lighting device;

[0007] The lighting device is disposed on the positioning device and forms a lighting portion exposed to the back surface of the wafer. The lighting portion irradiates the back surface of the wafer with light containing ultraviolet rays to activate the photocatalyst, and the photocatalyst removes the organic compounds on the back surface of the wafer.

[0008] As a further improvement of the present invention, the lighting device includes: a parallel backlight source. The side of the parallel backlight source facing the back surface of the wafer forms the lighting portion, and the back surface of the wafer is within the irradiation range of the lighting portion.

[0009] As a further improvement of the present invention, the positioning device is configured to accommodate the lighting device and expose the lighting portion to the back surface of the wafer.

[0010] As a further improvement of the present invention, the lighting device further includes: a cooling unit and a control unit arranged in sequence from top to bottom along the axis, and the cooling unit is clamped between the parallel backlight source and the control unit.

[0011] As a further improvement of the present invention, the lighting device further includes: a protective plate disposed on the top of the parallel backlight source and spaced apart from the wafer by a certain distance.

[0012] As a further improvement of the present invention, the spraying device includes: a housing disposed above the positioning device, a spraying pipe passing through the housing to spray photocatalyst vapor onto the wafer, and a heat preservation unit provided inside the housing.

[0013] As a further improvement of the present invention, the housing is configured to form a mixing chamber for accommodating the heat preservation unit, and the spraying device further includes: a multi-way valve pipe passing through the housing to inject photocatalyst vapor into the mixing chamber, spray photocatalyst vapor onto the wafer, and spray the photocatalyst vapor injected into the mixing chamber onto the wafer.

[0014] As a further improvement of the present invention, the positioning device includes: a support disk in which the installation cavity is formed, at least three positioning columns annularly arranged on the support disk, longitudinally penetrating the support disk and rotatably connected to the support disk, a transmission disk coaxially disposed outside the bottom of the support disk and axially rotatable relative to the support disk to drive the positioning columns to rotate along their axes, a rotating base coaxially disposed at the bottom of the transmission disk and synchronously driving the support disk and the transmission disk to axially rotate, and a control component for driving the transmission disk to axially rotate relative to the support disk and the rotating base to drive the positioning columns to switch between the state of clamping the wafer and the state of not clamping the wafer;

[0015] A first gear is formed on the outer periphery of the bottom of the positioning column, and a second gear meshing with the first gear to drive the positioning column to rotate along its axis is formed at the edge of the transmission disk.

[0016] As a further improvement of the present invention, the rotating base protrudes towards the transmission disk to form an installation column, and the transmission disk is configured to have a limiting portion spaced apart from the installation column;

[0017] The control component includes: an elastic member with two ends respectively connected to the installation column and the limiting portion; the elastic member forms an elastic force on the limiting portion to drive the transmission disk to rotate in a first direction, so as to drive the positioning column to switch from the state of not clamping the wafer to the state of clamping the wafer.

[0018] As a further improvement of the present invention, the drive disk is configured with a convex block that penetrates through the rotating base and is recessed to form an arc surface, and the rotating base is provided with a relief groove for the convex block to rotate axially;

[0019] The control assembly further includes: a telescopic unit, a guide block disposed on the telescopic rod of the telescopic unit and approaching or departing from the arc surface along with the telescopic movement of the telescopic rod, the telescopic unit driving the telescopic rod to extend to drive the guide block to approach the arc surface, and the guide block abutting against the arc surface to push the drive disk to rotate in a second direction opposite to the first direction, so as to drive the positioning post to switch from the state of clamping the wafer to the state of not clamping the wafer.

[0020] As a further improvement of the present invention, the rotating base includes: a hollow shaft drive motor, which is controlled by the drive motor to rotate axially and fixedly connected to an adapter plate of the support disk, and the adapter plate is configured with an adapter portion connecting the output shaft of the hollow shaft drive motor; the drive disk is configured with a transmission portion sleeved outside the adapter portion and rotatably connected to the adapter portion.

[0021] As a further improvement of the present invention, the wafer cleaning device further includes: a composite cavity device circumferentially disposed outside the positioning device to recover waste gas and waste liquid.

[0022] Compared with the prior art, the beneficial effects of the present invention are as follows: after the wafer surface and / or back surface is cleaned with an organic compound cleaning solution, the organic compound cleaning solution will remain on the back surface of the wafer. The photocatalyst vapor is sprayed onto the wafer through the spraying device, so that the photocatalyst covers the back surface of the wafer. Then, the back surface of the wafer is irradiated with light containing ultraviolet rays through the light irradiation portion of the light irradiation device to activate the photocatalyst, so as to decompose the organic compound on the back surface of the wafer and oxidize it into carbon dioxide and water, thereby completely removing organic pollutants. Through the synergistic effect of the photocatalyst and the light irradiation device, the residue of the organic compound cleaning solution on the back surface of the wafer is effectively removed, avoiding the formation of water marks during the drying process, affecting the subsequent process, and ensuring the cleanliness of the back surface of the wafer, improving the yield and quality of the wafer. Description of the Drawings

[0023] Figure 1 It is an overall schematic diagram of the wafer cleaning device disclosed by the present invention;

[0024] Figure 2 It is a schematic diagram of the spraying device disposed above the positioning device;

[0025] Figure 3 It is a schematic diagram of the light irradiation device disposed on the positioning device;

[0026] Figure 4 It is a schematic diagram of the support disk provided with an installation cavity;

[0027] Figure 5 Schematic diagram of the lighting device, with the support disk omitted;

[0028] Figure 6 Along the Figure 2 Schematic diagram of the cross-section of the housing and the insulation unit along the A-A direction in

[0029] Figure 7 Schematic diagram of the engagement of the second gear of the drive disk and the first gear of the positioning post;

[0030] Figure 8 Schematic diagram of the elastic member with both ends connected to the mounting post and the limiting portion respectively;

[0031] Figure 9 Schematic diagram of the connection portion constructed by the connection disk. Detailed implementation manners

[0032] The present invention will be described in detail below with reference to the embodiments shown in the drawings. However, it should be noted that these embodiments are not intended to limit the present invention. Any equivalent transformation or substitution in terms of function, method, or structure made by those of ordinary skill in the art based on these embodiments shall fall within the protection scope of the present invention.

[0033] In particular, it should be noted that in the following embodiments, the term "axial direction" refers to Figure 3 the direction shown by the central axis P. The term "longitudinal direction" refers to the direction parallel to the axial direction.

[0034] Please refer to Figures 1 to 9 a specific implementation manner of a wafer cleaning device 100 disclosed.

[0035] Refer to Figures 1 to 5 As shown, in this embodiment, the wafer cleaning device 100 includes: a positioning device 1 that holds the wafer 200 in a horizontal posture and drives the wafer 200 to rotate axially, a spraying device 2 for spraying photocatalyst vapor onto the wafer 200, and a lighting device 3; the lighting device 3 is disposed on the positioning device 1 and forms a lighting portion (not labeled) exposed to the back surface (not labeled) of the wafer. The lighting portion irradiates the back surface of the wafer with light containing ultraviolet rays to activate the photocatalyst, and the photocatalyst removes the organic compounds on the back surface of the wafer.

[0036] The wafer is held in a horizontal posture by the positioning device 1 and driven to rotate axially, and an organic compound cleaning liquid (for example, SC-1, Standard Clean 1) is sprayed onto the front surface and / or back surface of the wafer by an external cleaning component (not shown) to clean the wafer. After the front surface and / or back surface of the wafer is cleaned with the organic compound cleaning liquid, the organic compound cleaning liquid will remain on the back surface of the wafer. The positioning device 1 stops driving the wafer to rotate, and then the photocatalyst (for example, titanium dioxide, ) vapor is sprayed onto the wafer by the spraying device 2 so that the photocatalyst covers the back surface of the wafer. Then, the back surface of the wafer is irradiated with light containing ultraviolet rays (UV) by the light irradiation part of the light irradiation device 3 to activate the photocatalyst. Specifically, the ultraviolet rays excite the photocatalyst to generate electron-hole pairs, and then generate free radicals (such as hydroxyl radicals, ·OH). The generated free radicals attack and decompose the organic compounds on the back surface of the wafer and oxidize them into carbon dioxide ( ) and water ( ), thereby completely removing organic pollutants. Through the synergistic effect of the photocatalyst and the light irradiation device 3, the residue of the organic compound cleaning liquid on the back surface of the wafer is effectively removed, avoiding the formation of watermarks during the drying process, affecting the subsequent process, and ensuring the cleanliness of the back surface of the wafer, improving the yield and quality of the wafer. To solve the problem in the prior art that the organic compound cleaning liquid will remain on the back surface of the wafer and form watermarks on the back surface of the wafer during the drying process after cleaning. And the wafer cleaning device 100 can reduce the emission of organic compounds and the cost of waste liquid treatment through an efficient photocatalytic reaction, meeting the environmental protection requirements.

[0037] It should be noted that during the cleaning process of spraying the organic compound cleaning liquid on the front surface and / or back surface of the wafer, the light irradiation device 3 can also be turned on, and the back surface of the wafer is irradiated with light containing ultraviolet rays by the light irradiation part to improve the reaction efficiency of the cleaning liquid, thereby improving the cleaning efficiency.

[0038] See Figure 5As shown, the lighting device 3 includes: a parallel backlight 32. A lighting portion is formed on one side of the parallel backlight 32 facing the back surface of the wafer, and the back surface of the wafer is within the irradiation range of the lighting portion. The lighting portion is formed on one side of the parallel backlight 32 facing the back surface of the wafer to ensure that ultraviolet light irradiates the back surface of the wafer parallelly and uniformly, so that every part of the back surface of the wafer can receive consistent illumination, avoiding differences in cleaning effects caused by uneven illumination. And the uniform light distribution can improve the efficiency of the photocatalytic reaction, ensure that the organic compounds on the back surface of the wafer are completely decomposed, and avoid residues. The parallel backlight 32 includes a light-carrying plate (not shown), and LED lamp beads (not shown) that are uniformly arranged on the light-carrying plate and can emit ultraviolet light. The LED lamp beads are uniformly arranged on the light-carrying plate, and each lamp bead can emit ultraviolet (UV) light to ensure that uniform illumination can be received in each area of the back surface of the wafer.

[0039] Refer Figure 3 And Figure 4 As shown, the positioning device 1 is configured with an installation cavity 10 that accommodates the lighting device 3 and exposes the lighting portion to the back surface of the wafer. The installation cavity 10 can provide a fixed installation space for the lighting device 3 to ensure that the lighting device 3 does not shift during the operation of the equipment. And through the installation cavity 10, it can ensure that the lighting portion is accurately aligned with the back surface of the wafer, so that the light irradiates the back surface of the wafer evenly and effectively.

[0040] Refer Figure 5 As shown, the lighting device 3 further includes: a cooling unit 33 and a control unit 34 that are arranged in sequence from top to bottom along the axis. The cooling unit 33 is clamped between the parallel backlight 32 and the control unit 34. The control unit 34 adjusts the intensity of the light emitted by the lighting portion. According to the requirements of the cleaning process, the control unit 34 can dynamically adjust the light intensity to provide an appropriate illumination intensity to adapt to different cleaning conditions. And the control unit 34 controls the operation of the cooling unit 33 to keep the temperature of the parallel backlight 32 stable through heat dissipation or cooling technology, preventing the parallel backlight 32 from overheating due to long-term operation, avoiding a decrease in the performance or damage of the LED lamp beads caused by too high a temperature, and extending the service life of the parallel backlight 32. By stabilizing the temperature of the LED lamp beads, it helps to optimize the light output of the LED lamp beads, ensure the intensity and stability of the ultraviolet light, and improve the efficiency of the photocatalytic reaction. And the cooling unit 33 can reduce the thermal stress of the LED lamp beads, avoid changes in light output caused by temperature fluctuations, and ensure the uniformity and consistency of illumination. The cooling unit 33 not only cools the parallel backlight 32, but also protects the control unit 34 below, preventing high temperature from affecting the normal operation of the control unit 34.

[0041] Refer Figure 5As shown, the lighting device 3 further includes a protective plate 35 disposed on top of the parallel backlight 32 and spaced apart from the wafer 200 by a certain distance. The protective plate 35 can prevent contaminants (such as dust, cleaning liquid droplets, etc.) generated during the cleaning process from directly contacting the parallel backlight 32, so as to protect the light source from contamination and extend its service life. And in order to ensure the effective transmission of ultraviolet light, the material of the protective plate 35 needs to have a good transmittance to ultraviolet light, and materials such as quartz glass or borosilicate glass can be selected.

[0042] Refer Figure 2 to Figure 6 As shown, the spraying device 2 includes a housing 21 disposed above the positioning device 1, a spray pipe 22 passing through the housing 21 to spray photocatalyst vapor onto the wafer, and a heat preservation unit 23 disposed inside the housing 21. By disposing the housing 21 above the positioning device 1, since the vapor mass is higher than air, the spray pipe 22 sprays photocatalyst vapor onto the wafer from top to bottom (such as the direction indicated by arrow J5 in Figure 6 ), and the photocatalyst vapor naturally descends, thus diffusing to the back of the wafer to cooperate with the lighting device 3 to remove the residual organic compounds on the back of the wafer. Exemplarily, the spray pipe 22 can be configured as a multi-point nozzle to ensure uniform distribution of the photocatalyst vapor and avoid uneven local coverage on the back of the wafer. The heat preservation unit 23 can assist in heat preservation of the photocatalyst vapor in the spray pipe 22, ensure that the temperature of the photocatalyst vapor is within the optimal range, and avoid the influence of temperature fluctuations on the decomposition effect. And through the heat preservation unit 23, the activity of the photocatalyst in the spray pipe 22 can also be maintained, making it easier to react with organic pollutants, improving the cleaning effect. And it can also ensure the evaporation rate of the photocatalyst vapor, so that the photocatalyst can quickly cover the back of the wafer to improve the decomposition efficiency.

[0043] Refer Figure 6 As shown, the housing 21 is constructed with a mixing chamber 24 for accommodating the heat preservation unit 23. The spraying device 2 further includes a multi-way valve pipe 25 passing through the housing 21 to inject photocatalyst vapor into the mixing chamber 24, spray photocatalyst vapor onto the wafer, and spray the photocatalyst vapor injected into the mixing chamber 24 onto the wafer. The multi-way valve pipe 25 can Figure 6 spray the photocatalyst vapor directly onto the wafer in the spraying manner indicated by arrow J1 in Figure 6 to ensure that the photocatalyst vapor quickly diffuses to the back of the wafer; or the multi-way valve pipe 25 injects photocatalyst vapor into the mixing chamber 24 in the direction indicated by arrow J2 in Figure 6 and sprays the photocatalyst vapor injected into the mixing chamber 24 onto the wafer in the direction indicated by arrow J3 in Figure 6While spraying the photocatalyst vapor directly onto the wafer in the direction indicated by arrow J4, the photocatalyst vapor in the mixing chamber 24 is also sprayed onto the wafer to ensure the full diffusion and high activity of the photocatalyst vapor. The multi-way valve pipe 25 can adopt any one of the above spraying methods or a combination of multiple spraying methods, which is not limited in this embodiment as long as it can ensure that the photocatalyst vapor diffuses to the back of the wafer. The heat preservation unit 23 can assist in heat preservation of the photocatalyst vapor in the multi-way valve pipe 25 and the mixing chamber 24 to maintain the activity of the photocatalyst in the mixing chamber 24, so that the photocatalyst vapor is in a highly active state when sprayed through the multi-way valve pipe 25 and diffuses to the back of the wafer, and slow down the rate of temperature decrease of the photocatalyst in the mixing chamber 24 to improve the cleaning efficiency. Moreover, the heat preservation unit 23 can also keep the temperature in the mixing chamber 24 within the optimal range, prevent the photocatalyst vapor from condensing in the mixing chamber 24, and avoid the contamination of the wafer surface by the condensate droplets.

[0044] As Figure 6 shown, in this embodiment, the heat preservation unit 23 includes: a heat conduction plate 231, and a heating pipe 232 (for example, an electric heating pipe) embedded in the heat conduction plate 231. The heating pipe 232 is used to transfer heat to the heat conduction plate 231, and the heat conduction plate 231 is used to keep the photocatalyst vapor in the spray pipe 22, the multi-way valve pipe 25 and the mixing chamber 24 warm. The spraying device 2 further includes: a pressure regulating valve 26 and a suction pipe 27 that penetrate the housing 21 and communicate with the mixing chamber 24. The pressure regulating valve 26 is used to balance the pressure inside and outside the mixing chamber 24, prevent the pressure in the mixing chamber 24 from being too high or too low, and ensure the stable spraying of the photocatalyst vapor. The suction pipe 27 is used to suck and recover the residual photocatalyst vapor in the mixing chamber 24 after removing the organic compound cleaning liquid on the back of the wafer.

[0045] As Figures 2 to 5 well Figure 7As shown in the figure, the positioning device 1 includes: a support disk 11 with an installation cavity 10 formed by opening, at least three positioning posts 12 that are annularly arranged around the support disk 11, penetrate the support disk 11 longitudinally and are rotatably connected to the support disk 11, a transmission disk 13 coaxially arranged outside the bottom of the support disk 11 and axially rotating relative to the support disk 11 to drive the positioning posts 12 to rotate along their axes, a rotating base 14 coaxially arranged at the bottom of the transmission disk 13 and synchronously driving the support disk 11 and the transmission disk 13 to axially rotate, and a control component 15 that drives the transmission disk 13 to axially rotate relative to the support disk 11 and the rotating base 14 to drive the positioning posts 12 to switch between the state of clamping the wafer and the state of not clamping the wafer; a first gear 121 is formed on the outer circumference of the bottom of the positioning post 12, and a second gear 135 that meshes with the first gear 121 to drive the positioning post 12 to rotate along its axis is constructed at the edge of the transmission disk 13. By driving the transmission disk 13 to axially rotate relative to the support disk 11 and the rotating base 14 through the control component 15, and through the meshing of the first gear 121 and the second gear 135, the positioning post 12 can be driven to rotate along its axis, so as to realize the switching of the positioning post 12 between the state of clamping the wafer and the state of not clamping the wafer. After the positioning post 12 clamps the wafer, the rotating base 14 synchronously drives the support disk 11 and the transmission disk 13 to axially rotate to maintain the stability of the wafer during the cleaning process.

[0046] Refer to Figure 7 and Figure 8 As shown in the figure, the rotating base 14 protrudes towards the transmission disk 13 to form an installation post 141, and a limiting portion 131 that is constructed to be spaced from the installation post 141 is formed on the transmission disk 13; the control component 15 includes: an elastic member 151 with two ends respectively connected to the installation post 141 and the limiting portion 131; the elastic member 151 forms an elastic acting force on the limiting portion 131 to drive the transmission disk 13 to rotate in the first direction, so as to drive the positioning post 12 to switch from the state of not clamping the wafer to the state of clamping the wafer. The elastic member 151 (for example, a spring) forms an elastic acting force on the limiting portion 131 to drive the transmission disk 13 to rotate in the first direction (such as Figure 8 the direction shown by the arrow Z2 in the figure), and while the transmission disk 13 rotates, through the meshing of the second gear 135 and the first gear 121, the positioning post 12 is driven to rotate along its axis to realize the switching from the state of not clamping the wafer to the state of clamping the wafer.

[0047] Refer to Figures 7 to 9As shown, the driving disk 13 is configured with a convex block 132 that penetrates through the rotating base 14 and is concavely formed with an arc surface 133. The rotating base 14 is provided with a relief groove 142 for the convex block 132 to rotate axially; the control assembly 15 further includes: a telescopic unit 152 (for example, a cylinder), a guide block 154 disposed on the telescopic rod 1521 of the telescopic unit 152 and approaching or departing from the arc surface 133 with the telescopic movement of the telescopic rod 1521. The telescopic unit 152 drives the telescopic rod 1521 to extend to drive the guide block 154 to approach the arc surface 133. The guide block 154 abuts against the arc surface 133 to push the driving disk 13 to rotate in a second direction opposite to the first direction, so as to drive the positioning post 12 to switch from the state of clamping the wafer to the state of not clamping the wafer. By driving the telescopic rod 1521 of the telescopic unit 152 to extend, the guide block 154 is driven to approach the arc surface 133. The guide block 154 abuts against the arc surface 133 to push the driving disk 13 to rotate in a second direction opposite to the first direction (such as Figure 8 the direction indicated by the arrow Z1 in the figure), while the driving disk 13 rotates, it meshes with the first gear 121 through the second gear 135 to drive the positioning post 12 to rotate reversely along its axis, so as to realize the switching from the state of clamping the wafer to the state of not clamping the wafer. At the same time, during the rotation of the driving disk 13 in the second direction, the limiting portion 131 is driven to move synchronously, so that the elastic member 151 is stressed and its length changes. When the telescopic unit 152 drives the telescopic rod 1521 to retract to drive the guide block 154 to depart from the arc surface 133, the telescopic unit 152 returns to its non-loaded length, thereby pulling the limiting portion 131 to drive the driving disk 13 to rotate in the first direction. While the driving disk 13 rotates, it meshes with the first gear 121 through the second gear 135 to drive the positioning post 12 to rotate along its axis to realize the switching from the state of not clamping the wafer to the state of clamping the wafer.

[0048] Refer to Figures 7 to 9As shown in the figure, the rotating base 14 includes: a hollow shaft drive motor 143, an adapter plate 145 that is controlled by the drive motor to rotate axially and is fixedly connected to the support plate 11, and an adapter portion 1451 of the adapter plate 145 that is configured to connect to the output shaft 1431 of the hollow shaft drive motor 143; a transmission plate 13 that is configured with a transmission portion 134 sleeved outside the adapter portion 1451 and rotatably connected to the adapter portion 1451; there are gaps for the axial rotation of the transmission plate 13 between the support plate 11 and the transmission plate 13 and between the adapter plate 145 and the transmission plate 13. The adapter portion 1451 of the adapter plate 145 is configured to connect to the output shaft 1431 of the hollow shaft drive motor 143 to ensure the effective transmission of the power of the hollow shaft drive motor 143 to the adapter plate 145, so that the adapter plate 145 rotates axially under the control of the hollow shaft drive motor 143, and the adapter plate 145 is fixedly connected to the support plate 11 to ensure the synchronous rotation of the support plate 11 and the adapter plate 145. The transmission plate 13 is configured with a transmission portion 134 sleeved outside the adapter portion 1451 and rotatably connected to the adapter portion 1451. The transmission portion 134 and the adapter portion 1451 can be rotatably connected through a bearing to ensure that the transmission plate 13 can rotate axially relative to the adapter portion 1451. There is a gap for the axial rotation of the transmission plate 13 between the support plate 11 and the transmission plate 13, and there is a gap for the axial rotation of the transmission plate 13 between the adapter plate 145 and the transmission plate 13 to ensure that the transmission plate 13 can rotate freely axially. The transmission plate 13 is configured with a limiting portion 131 spaced from the mounting post 141 to ensure that there is enough space for the elastic member 151 to expand and contract.

[0049] Refer Figure 5 to Figure 7 As shown in the figure, the wafer cleaning device 100 further includes a mounting frame 5, and the hollow shaft drive motor 143 and the telescopic unit 152 are arranged on the mounting frame 5. When multiple groups of bumps 132 are configured, the telescopic rod 1521 of the telescopic unit 152 is arranged on the annular bracket 155, and the guide block 154 is arranged on the annular bracket 155 and is longitudinally aligned with the bump 132. Thus, by driving the telescopic rod 1521 of the telescopic unit 152 to extend, the annular bracket 155 and multiple groups of guide blocks 154 arranged on the annular bracket 155 are simultaneously brought close to the arc surface 133 of the bump 132. The guide block 154 abuts against the arc surface 133 to push the transmission plate 13 to rotate in a second direction opposite to the first direction. While the transmission plate 13 rotates, it meshes with the first gear 121 through the second gear 135 to drive the positioning post 12 to rotate reversely along its axis, realizing the state transition from clamping the wafer to not clamping the wafer.

[0050] Refer Figure 1As shown, the wafer cleaning device 100 further includes a composite cavity device 4 that circumferentially surrounds the positioning device 1 to recover waste gas and liquid. The composite cavity device 4 recovers the waste gas and liquid generated during the wafer cleaning process, and after removing the organic compound cleaning liquid on the back of the wafer, the photocatalyst vapor diffused into the composite cavity device 4 is suctioned and recovered through an exhaust gas recovery device (not shown) connected to the composite cavity device 4. The composite cavity device 4 in this embodiment is a prior art and will not be elaborated here.

[0051] The series of detailed descriptions listed above are only specific descriptions of the feasible embodiments of the present invention, and they are not intended to limit the protection scope of the present invention. Any equivalent embodiments or changes made without departing from the technical spirit of the present invention should be included in the protection scope of the present invention.

[0052] For those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or basic characteristics of the present invention. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present invention. Any reference signs in the claims should not be regarded as limiting the claims involved.

[0053] In addition, it should be understood that although this specification is described according to embodiments, not every embodiment only contains an independent technical solution. This narrative way of the specification is only for clarity. Those skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A wafer cleaning device, characterized in that, Including: A positioning device for holding a wafer in a horizontal posture and driving the wafer to rotate axially, a spraying device for spraying photocatalyst vapor onto the wafer, and a lighting device; The lighting device is disposed on the positioning device and forms a lighting portion exposed to the back surface of the wafer. The lighting portion irradiates light containing ultraviolet rays on the back surface of the wafer to activate the photocatalyst, and the photocatalyst removes organic compounds on the back surface of the wafer; The lighting device includes: a parallel backlight source. The lighting portion is formed on one side of the parallel backlight source facing the back surface of the wafer, and the back surface of the wafer is within the irradiation range of the lighting portion; The positioning device is configured to define a mounting cavity for accommodating the lighting device and exposing the lighting portion to the back surface of the wafer; The spraying device includes: a housing disposed above the positioning device, a spraying pipe passing through the housing to spray photocatalyst vapor onto the wafer, and a heat preservation unit disposed inside the housing; The housing is configured to define a mixing cavity for accommodating the heat preservation unit. The spraying device further includes: a multi-way valve pipe passing through the housing to inject photocatalyst vapor into the mixing cavity, spray photocatalyst vapor onto the wafer, and spray the photocatalyst vapor injected into the mixing cavity onto the wafer; The positioning device includes: a support disk in which the mounting cavity is formed by opening, at least three positioning posts annularly disposed on the support disk, longitudinally penetrating the support disk and rotatably connected to the support disk, a transmission disk coaxially disposed outside the bottom of the support disk and axially rotating relative to the support disk to drive the positioning posts to rotate along their axes, a rotating base coaxially disposed at the bottom of the transmission disk and synchronously driving the support disk and the transmission disk to rotate axially, and a control component for driving the transmission disk to axially rotate relative to the support disk and the rotating base to drive the positioning posts to switch between a state of clamping the wafer and a state of not clamping the wafer; A first gear is formed on the outer periphery of the bottom of the positioning post, and a second gear meshing with the first gear to drive the positioning post to rotate along its axis is formed at the edge of the transmission disk; The rotating base protrudes toward the transmission disk to form a mounting post, and the transmission disk is configured to have a limiting portion spaced from the mounting post; The control component includes: an elastic member having two ends respectively connected to the mounting post and the limiting portion; the elastic member forms an elastic acting force on the limiting portion to drive the transmission disk to rotate in a first direction, so as to drive the positioning post to switch from a state of not clamping the wafer to a state of clamping the wafer; The transmission disk is configured to have a convex block passing through the rotating base and recessed to form an arc surface, and the rotating base is provided with a relief groove for the convex block to rotate axially; The control component further includes: a telescopic unit, a guide block disposed on the telescopic rod of the telescopic unit and approaching or departing from the arc surface along with the telescopic movement of the telescopic rod. The telescopic unit drives the telescopic rod to extend to drive the guide block to approach the arc surface, and the guide block abuts against the arc surface to push the transmission disk to rotate in a second direction opposite to the first direction, so as to drive the positioning post to switch from a state of clamping the wafer to a state of not clamping the wafer.

2. The wafer cleaning device according to claim 1, characterized in that, The lighting device further includes: a cooling unit and a control unit arranged axially from top to bottom in sequence, and the cooling unit is clamped between the parallel backlight source and the control unit.

3. The wafer cleaning device according to claim 1, characterized in that, The lighting device further includes: a protective plate disposed on the top of the parallel backlight source and spaced apart from the wafer by a certain distance.

4. The wafer cleaning device according to claim 1, characterized in that, The rotating base includes: a hollow shaft drive motor, a connecting disk that is controlled by the drive motor to rotate axially and is fixedly connected to the support disk, and the connecting disk is configured with a connecting portion for connecting the output shaft of the hollow shaft drive motor; the transmission disk is configured with a transmission portion sleeved outside the connecting portion and rotatably connected to the connecting portion.

5. The wafer cleaning apparatus according to claim 1, wherein, The wafer cleaning equipment further includes: a composite cavity device that circumferentially surrounds the outside of the positioning device to recover waste gas and waste liquid.

Citation Information

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