Substrate processing method

Abstract

There is provided a method of filling a gap formed on a substrate, the method including the steps of providing a substrate onto a substrate support in a reaction chamber, forming a film on the substrate, including the steps of supplying a first gas to the reaction chamber and supplying a second gas to the reaction chamber, and processing the film formed on the substrate, comprising the steps of supplying a third gas to the reaction chamber and supplying a fourth gas to the reaction chamber wherein the second gas and the fourth gas are activated in situ and the third gas is activated remotely.

Description

Technical Field

[0001] The present disclosure relates to a process for forming a semiconductor film, and more particularly to a method of filling a gap with a semiconductor film while effectively using an inhibitor. Background Art

[0002] Conventional PECVD (plasma enhanced chemical vapor deposition) methods have been used to fill gap structures in semiconductor devices, such as STI (shallow trench isolation). As device size shrinks, the line width of circuits becomes narrower. However, the PECVD method mainly forms a film on the top of the gap and hinders filling the lower part of the gap. As a result, voids are generated in the gap, such as Figure 1 As shown. Figure 1 In the embodiment, the gap 2 formed on the substrate 1 can be filled with the film 3 by the PECVD method to generate a void in the gap 2.

[0003] On the other hand, the PEALD (plasma enhanced atomic layer deposition) method can be used instead of the PECVD method to fill the gap. The PEALD method can conformally form a film along the surface of the gap. However, as the gap becomes deeper and its entrance becomes narrower, it is more difficult for the source gas to travel to the lower part of the gap, resulting in a void in the gap.

[0004] To solve this problem, inhibitors are used in the PEALD method. The inhibitor prevents the formation of a film in the upper part of the gap. As a result, the entrance of the gap is open compared to the lower part of the gap, resulting in a void-free gap filling process. Figure 2 As shown, a conventional inhibition process for filling a gap includes supplying an activated inhibition gas such as nitrogen radicals and then forming a film thereon.

[0005] exist Figure 2 In the process, a film 5 can be formed on the gap 2 of the substrate 1 having the gap 2 (step 1). Then, an inhibitor can be supplied to the substrate, and an inhibition layer 6 can be formed on the upper part of the gap 2 (step 2). The inhibitor can include nitrogen radicals generated in situ. Steps 1 and 2 are repeated. Since the inhibition layer 6 has been formed on the upper part of the gap, film formation can be inhibited in the upper part compared to the lower part of the gap shown in step 3. In other words, the entrance of the gap can be open and bottom-up filling can be performed. Steps 1 to 3 can be repeated until the gap is completely filled without voids (step 4).

[0006] However, conventional suppression processes have limitations in filling gaps with high aspect ratios and narrow inlets. Filling such gaps requires stronger suppression features in the upper portion of the gap. To this end, higher plasma power is applied to the reaction chamber when supplying the suppressant, but this can cause undesirable damage to the substrate and reaction chamber as well as film delamination. Therefore, a gap filling method that avoids these effects is needed. Summary of the invention

[0007] The present disclosure discloses a method for filling a gap, and more particularly discloses a method for filling a gap more effectively using an inhibitor by using in-situ plasma and remote plasma.

[0008] In one or more embodiments, a method of filling a gap formed on a substrate may include providing a substrate on a substrate support in a reaction chamber, forming a film on the substrate, and processing the film formed on the substrate.

[0009] In one or more embodiments, forming a film on the substrate may include supplying a first gas in a reaction chamber and supplying a second gas in the reaction chamber.

[0010] In one or more embodiments, the step of treating the film on the substrate may include supplying a third gas in the reaction chamber and supplying a fourth gas in the reaction chamber.

[0011] In one or more embodiments, the second gas and the fourth gas may be activated in situ and the third gas may be activated remotely.

[0012] In one or more embodiments, the first gas may include one or more of aminosilane, iodosilane, or silicon halide.

[0013] In one or more embodiments, the first gas may include at least one of the following: TSA, (SiH 3 ) 3 N; DSO, (SiH 3 ) 2 ;DSMA,(SiH 3 ) 2 NMe; DSEA, (SiH 3 ) 2 NEt;DSIPA,(SiH 3 ) 2 N(iPr);DSTBA,(SiH 3 ) 2 N(tBu);DEAS,SiH 3 Nt 2 ;DTBAS,SiH 3 N(tBu) 2 ; BDEAS,SiH 2 (NEt 2 ) 2 ; BDMAS,SiH 2 (NMe 2 ) 2 ;BTBAS,SiH 2 (NHtBu)2 ;BITS,SiH 2 (NHSiMe 3 ) 2 ; DIPAS,SiH 3 N(iPr) 2 ;TEOS,Si(OEt) 4 ; SiCl 4 ; HCD,Si 2 Cl 6 ;3DMAS,SiH(N(Me) 2 ) 3 ; BEMAS,SiH 2 [N(Et)(Me)] 2 ;AHEAD,Si 2 (NHEt) 6 ;TEAS,Si(NHEt) 4 ;Si 3 H 8 ;DCS,SiH 2 Cl 2 ;SiHI 3 ;SiH 2 I 2 , its derivatives or mixtures thereof.

[0014] In one or more embodiments, the second gas may include an oxygen-containing gas.

[0015] In one or more embodiments, the second gas may include O 2 、NO、N 2 O、NO 2 , O 3 or at least one of a mixture thereof.

[0016] In one or more embodiments, the third gas may include a nitrogen-containing gas.

[0017] In one or more embodiments, the third gas may include N 2 NH 3 NH 4 、N 2 H 2 、N 2 H 4 or at least one of a mixture thereof.

[0018] In one or more embodiments, the third gas may be activated in a remote chamber and supplied to the reaction chamber.

[0019] In one or more embodiments, the fourth gas may include an inert gas.

[0020] In one or more embodiments, the fourth gas may be supplied throughout the step of forming a film and the step of treating the film, and the third gas and the fourth gas may be activated at the same time.

[0021] In one or more embodiments, a cycle ratio of the step of forming the film to the step of treating the film may be 1:5 or less.

[0022] In one or more embodiments, a substrate processing chamber for processing a substrate having a gap may include a reaction chamber, a remote chamber connected to the reaction chamber, and a plurality of gas supply lines connected to the reaction chamber and the remote chamber.

[0023] In one or more embodiments, the substrate processing chamber may further include a first power supply connected to the reaction chamber, a second power supply connected to the remote chamber, and a main controller controlling the first power supply and the second power supply.

[0024] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the exemplary embodiments of the present disclosure below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 The gap filling process by conventional PECVD method is shown.

[0026] Figure 2 The conventional suppression process for filling the gap is shown.

[0027] Figure 3 A process flow of at least one embodiment of the present disclosure is shown.

[0028] Figure 4 A timing diagram of at least one embodiment of the present disclosure is shown.

[0029] FIG. 5A to FIG. 5C The reaction mechanism on the substrate in the step of processing the film is shown.

[0030] Figure 6 The SiO 2 Inhibitory features on membranes.

[0031] Figure 7 Shown in Figure 6 Film profile from top to bottom of the gap for each condition shown.

[0032] Figure 8 It is shown Figure 6 and Figure 7 TEM (transmission electron microscopy) images of the inhibition ability of each condition.

[0033] Fig. 9 A substrate processing chamber of the present disclosure is shown.

[0034] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0035] Although certain embodiments and examples are disclosed below, it will be appreciated by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.

[0036] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include wafers of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0037] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.

[0038] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0039] Figure 3 The process flow of the process of the present disclosure is shown. Figure 3 every step.

[0040] exist Figure 3 In step 100, a substrate including a gap may be provided to a substrate support in a reaction chamber. The gap may be a groove having a high aspect ratio. For example, the gap may have a high aspect ratio of 20:1 or greater.

[0041] In step 110, a film may be formed on a substrate. The film may be a SiO 2 The film can be formed by sequentially and alternately supplying the first gas and the second gas. For example, the first gas can be a silicon source gas, and the second gas can be an oxygen-containing gas. The second gas can be further activated in situ (i.e., power is applied to an electrode disposed in the reaction chamber). The power intensity applied to the reaction chamber can be between about 50W and about 400W, or between about 100W and 300W.

[0042] Step 110 may be repeated multiple times.

[0043] The first gas may include one or more of aminosilane, iodosilane or silicon halide. For example, the first gas may include at least one of the following: TSA, (SiH 3 ) 3 N; DSO, (SiH 3 ) 2 ;DSMA,(SiH 3 ) 2 NMe; DSEA, (SiH 3 ) 2 NEt;DSIPA,(SiH 3 ) 2 N(iPr);DSTBA,(SiH 3 ) 2 N(tBu);DEAS,SiH 3 Nt 2 ;DTBAS,SiH 3 N(tBu) 2 ; BDEAS,SiH 2 (NEt 2 ) 2 ; BDMAS,SiH 2 (NMe 2 ) 2 ;BTBAS,SiH 2 (NHtBu) 2 ;BITS,SiH 2 (NHSiMe 3 ) 2 ; DIPAS,SiH 3 N(iPr) 2 ;TEOS,Si(OEt) 4 ; SiCl 4 ; HCD,Si 2 Cl 6 ;3DMAS,SiH(N(Me) 2 ) 3 ; BEMAS,SiH2 [N(Et)(Me)] 2 ;AHEAD,Si 2 (NHEt) 6 ;TEAS,Si(NHEt) 4 ;Si 3 H 8 ;DCS,SiH 2 Cl 2 ;SiHI 3 ;SiH 2 I 2 , its derivatives or mixtures thereof.

[0044] The second gas may include O 2 、NO、N 2 O、NO 2 , O 3 or at least one of a mixture thereof.

[0045] In step 120, the film formed on the substrate may be processed.

[0046] In step 120, the treatment may be performed by supplying a third gas to a remote chamber connected to the reaction chamber via a gas supply line and activating the third gas ex situ (i.e., applying power to the remote chamber). Thereafter, the activated third gas may be supplied to the reaction chamber. The power intensity applied to the remote chamber may be between about 1000 W and about 10000 W, or between about 2000 W and about 8000 W. In one embodiment of the present disclosure, the remote chamber may include a remote plasma unit.

[0047] In another embodiment, Ar may be further supplied to the remote chamber along with the third gas to stabilize the remote plasma.

[0048] Step 120 may be repeated multiple times.

[0049] In step 120, the process may further include supplying a fourth gas to the reaction chamber and activating the fourth gas by supplying power to the reaction chamber. To this end, a power between about 50 W and about 400 W or between about 100 W and about 300 W may be applied to the reaction chamber. That is, in step 120, the third gas may be supplied to the remote chamber, activated and flowed to the reaction chamber, and the fourth gas may be supplied to the reaction chamber and activated. In one embodiment, the third gas and the fourth gas may be activated simultaneously.

[0050] The third gas may suppress film formation on the substrate, particularly in the upper portion of the gap. More specifically, the third gas may be an inhibitor, and the third gas supplied to the substrate may form an inhibitory layer in the upper portion of the gap.

[0051] The third gas may include a nitrogen-containing gas, and may include N 2 NH 3 NH 4 、N 2 H 2 、N 2 H 4 or at least one of a mixture thereof.

[0052] The fourth gas may include an inert gas such as Ar and He. The fourth gas may be continuously supplied to the reaction chamber throughout steps 100 to 120. In one embodiment, the fourth gas may be a carrier gas of the first gas and the purge gas.

[0053] Step 110 may be repeated multiple times, and the cycle ratio of step 110 to step 120 may be 5:1 or less.

[0054] Step 130 determines whether the gap is filled with film without voids. If the gap has not been filled, steps 110 and 120 are repeated until the gap is filled. If the gap is filled without voids, the process can end (ie, step 140).

[0055] Steps 110 to 130 may be performed in a reaction chamber at between about 200°C and about 400°C or between about 250°C and 350°C.

[0056] Figure 4 A timing diagram of the process of the present disclosure is shown.

[0057] exist Figure 4 In the process, steps T1 to T4 are used to form SiO on the substrate. 2 membrane steps, and corresponds to Figure 3 Step 110. Steps T5 and T6 are for treating SiO formed on the substrate. 2 membrane steps, and corresponds to Figure 3 Step 120.

[0058] like Figure 4 As shown, used to form SiO 2 The steps of film deposition (i.e., T1 to T4) can be performed by a PEALD method, and power is applied to the reaction chamber in situ at step T3 to activate the oxygen-containing gas (e.g., O 2 ). Steps T1 to T4 may be repeated multiple times (ie, M cycles).

[0059] For processing SiO 2 The steps of forming the film (ie, T5 to T6) can be performed by supplying and activating a third gas. The third gas can be a nitrogen-containing gas, such as N 2, and in step T6, it is activated by applying power to the remote chamber remotely, and is supplied to the reaction chamber. Steps T5 to T6 may be repeated multiple times (i.e., N cycles). Figure 4 As shown, at step T6, the fourth gas (eg, Ar) may be further activated in situ in the reaction chamber at the same time.

[0060] Step 110 may be repeated a plurality of times, and a cycle ratio (M:N) of step 110 to step 120 may be 5:1 or less.

[0061] FIG. 5A to FIG. 5C The reaction mechanism on the substrate during the film processing steps is shown.

[0062] Figure 5A Only remotely activated nitrogen radicals are shown to be supplied. However, the radical reactivity with the substrate (i.e., -OH sites) may be weak because the nitrogen radicals may be deactivated when traveling to the substrate. Therefore, an inhibition layer may not be formed on the surface of the substrate.

[0063] Figure 5B A further supply of argon radicals is shown.

[0064] exist Figure 5B In the process, the argon Ar ions break the bond between -OH and -Si and remove -OH from the bond, leaving a -Si dangling bond. Ar is activated in situ, so it may have enough energy to break the Si-OH bond through ion bombardment. Afterwards, the nitrogen radicals may react with the -Si dangling bond. In one embodiment of the present disclosure, Figure 5A Remote activation of nitrogen as shown and Figure 5B The in-situ activation of Ar shown can be performed simultaneously.

[0065] Figure 5C The surface of the substrate after treatment is shown. Figure 5C As shown, a Si-N layer is formed on the surface of the substrate. Nitrogen can inhibit the Si source gas from being adsorbed on the substrate in subsequent cycles. Therefore, the Si-N layer is called an inhibition layer.

[0066] exist FIG. 5B to FIG. 5C In the embodiment of the present invention, Ar ions can break Si-OH bonds and help nitrogen radicals react with -Si dangling bonds. Therefore, the present invention has a technical benefit of achieving desired suppression characteristics without applying high power to the suppression gas when filling gaps with high aspect ratios.

[0067] exist Figure 6 In the experiment, the SiO 2 Film growth rate is used to identify inhibitor characteristics.

[0068] Condition A does not undergo any treatment. In other words, Condition A only forms SiO on the substrate. 2 Condition A showed the highest film growth rate because no inhibitor was supplied to the substrate.

[0069] Condition B performs the formation of SiO 2 membrane, followed by remotely activated NH 3 Processing SiO 2 As shown in the figure, SiO 2 Film growth rate and SiO under condition A 2 The film growth rates are almost the same. Therefore, this suggests that the inhibitory ability of the remotely activated inhibitor may be lower. In other words, the inhibitor may not have enough energy to break the Si-OH bond.

[0070] Condition C performs the formation of SiO 2 The membrane was then activated with NH 3 Processing SiO 2 As shown in the figure, SiO 2 The film growth rate is significantly lower than that of SiO under condition B. 2 Therefore, this suggests that the in situ activated inhibitor may have enough energy to break the Si-OH bond and has a higher inhibition ability compared with condition B.

[0071] Condition D performs the formation of SiO 2 membrane, and then simultaneously with remotely activated NH 3 and in-situ activated Ar-treated SiO 2 As shown in the figure, SiO 2 The film growth rate is even lower than that of SiO under condition C. 2 Therefore, this suggests that the inhibitor under condition D may have more energy sufficient to break the Si-OH bond and has a stronger inhibitory ability than that under condition C.

[0072] Therefore, from Figure 6 From this perspective, the present disclosure has a technical benefit in that treatment with a remotely activated suppressant and an inert gas activated in situ can achieve more enhanced suppression characteristics.

[0073] Figure 7 Shown in Figure 6 Film profile from top to bottom of the gap for each condition shown.

[0074] like Figure 7 As shown in the figure, the SiO formed on the sidewall of the gap increases with depth. 2 The thickness of the film varies depending on the processing conditions.

[0075] exist Figure 7In the case of processing under condition B (i.e. supplying only remotely activated NH 3 ) can still produce a thick SiO 2 The film is almost the same as the SiO 2 The membrane thickness is the same (i.e., normalized thickness is 0.95 for condition B and 0.93 for condition A). In other words, the inhibitors that supply remote activation may have lower inhibitory capacity.

[0076] Treatment under condition C (i.e. supply of activated in situ NH 3 ) produces a thinner SiO layer at the top of the gap than condition B. 2 The film was normalized to 0.85 for condition C and 0.95 for condition B. As mentioned above, the in situ activated inhibitor may have more energy to break the Si-OH bond and react with the -Si dangling bond than the remote activated inhibitor. Therefore, the treatment under condition C may have stronger inhibition ability than condition B.

[0077] Treatment under condition D (i.e., simultaneous supply of remotely activated NH 3 and in-situ activated Ar) produce a much thinner SiO layer in the upper part of the gap than condition C. 2 The normalized thickness of the film is 0.65 for condition D and 0.85 for condition C. In other words, the gap entrance can be opened to a greater extent than condition C. Therefore, condition D can have a stronger inhibition ability than other treatment conditions.

[0078] As described above, as the step coverage of the gap becomes higher and the width of the gap becomes narrower, more power is required to increase the suppression capability. However, applying more power to activate the inhibitor in situ in the reaction chamber may cause damage to the substrate and the reaction chamber. On the other hand, Figure 6 and Figure 7 As shown, only applying power to remotely activate the inhibitor may result in lower suppression capability. Therefore, the treatment method of the present invention, that is, remotely activating the inhibitor and in-situ activating Ar simultaneously, has the technical benefit of further enhancing the suppression capability and reducing damage to the substrate and the reaction chamber.

[0079] Figure 8 It is shown Figure 6 and Figure 7 TEM (transmission electron microscopy) images of the inhibition ability of each condition.

[0080] like Figure 8 As shown, condition D shows that the width difference between the upper and lower parts of the gap (ie, AB) is greater than that of the other conditions. In other words, the simultaneous in-situ treatment and remote treatment may have the strongest inhibitory ability compared to the other conditions.

[0081] Table 1 shows the test conditions of an embodiment of the present disclosure.

[0082] Table 1 - Test conditions for one embodiment of the present disclosure

[0083]

[0084]

[0085] Fig. 9 A substrate processing chamber of the present disclosure is shown.

[0086] exist Fig. 9 , the substrate processing chamber 1 may include a reaction chamber 3, a remote chamber 5, a connection unit 7 connecting the reaction chamber 3 with the remote chamber 5, and a gas supply unit. The gas supply unit may include a first gas supply line 17, a second gas supply line 19, a third gas supply line 21, and a fourth gas supply line 23.

[0087] The first gas supply line 17 supplies a first gas to the reaction chamber 3 , the second gas supply line 19 supplies a second gas to the reaction chamber 3 , the third gas supply line 21 supplies a third gas to the remote chamber 5 , and the fourth gas supply line 23 supplies a fourth gas to the reaction chamber 3 .

[0088] The gas supply unit may further include a first gas flow control unit for the first gas supply line, a second gas flow control unit for the second gas supply line, a third gas flow control unit for the third gas supply line, and a fourth gas flow control unit for the fourth gas supply line.

[0089] The first gas flow control unit may include a first gas flow controller 31 and a first valve V1. The second gas flow control unit may include a second gas flow controller 33 and a second valve V2. The third gas flow control unit may include a third gas flow controller 35 and a third valve V3. The fourth gas flow controller may include a fourth gas flow controller 37 and a fourth valve V4.

[0090] The connecting unit 7 may further include a fifth valve V5 in order to open and / or close the connecting unit 7 .

[0091] The reaction chamber 3 may further include a gas injection unit 9 and a substrate support 11. The gas injection unit 9 and the substrate support 11 may be arranged to form a reaction space 15. The gas injection unit 9 may include a showerhead plate, or in other embodiments, the gas injection unit may include a corn-shaped or quarter-elliptical wall with a curved surface to distribute the gas more evenly to the substrate. The gas injection unit 9 may act as an electrode to which power may be applied to form a plasma in situ.

[0092] The substrate processing chamber 1 may further include a power supply unit to supply power to the reaction chamber and the remote chamber.

[0093] The power supply unit may include a first power source 25 connected to the reaction chamber 3 , a second power source 27 connected to the remote chamber 5 , and a controller 29 controlling the first power source 25 and the second power source 27 .

[0094] The controller 29 may control the first power source 25 to apply power to the electrode (e.g., gas injection unit 9) reaction chamber 3 in the film formation step so as to generate plasma in the reaction space 15. The controller 29 may also control the first power source 25 and the second power source 27 to simultaneously apply power to the reaction chamber 3 and the remote chamber 5 in the processing step.

[0095] As described above, during the film forming step, the first gas, the second gas, and the fourth gas may be supplied to the reaction chamber 3 , and the first power source 25 may apply power to the reaction chamber 3 .

[0096] During the processing step, the third gas may be supplied to the remote chamber 5, and the second power supply 27 may apply power to the remote chamber 5. In one embodiment of the present disclosure, the remote chamber may include a remote plasma unit. The activated third gas may flow to the reaction chamber 3 through the connection unit 7. In another embodiment, Ar may be further supplied to the remote chamber to stabilize the remote plasma. The fourth gas may also be supplied to the reaction chamber 3 and activated by the power applied to the reaction chamber 3 from the first power supply 25. The third gas and the fourth gas may be activated simultaneously in the processing step.

[0097] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, as many variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in other orders, or may be omitted in some cases.

[0098] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

Claims

1. A method for filling a gap formed on a substrate, the method comprising: providing a substrate onto a substrate support in a reaction chamber; Forming a film on a substrate, comprising: supplying a first gas to the reaction chamber; supplying a second gas to the reaction chamber; and Processing the film formed on the substrate, including: supplying a third gas in the reaction chamber; and supplying a fourth gas in the reaction chamber, Among them, the second gas and the fourth gas are activated in situ, and the third gas is activated remotely.

2. The method according to claim 1, wherein: The first gas includes one or more of aminosilane, iodosilane or silicon halide.

3. The method according to claim 3, wherein: The first gas includes at least one of the following: TSA, (SiH3)3N; DSO, (SiH3)2; DSMA, (SiH3)2NMe; DSEA, (SiH3)2NEt; DSIPA, (SiH3)2N(iPr); DSTBA, (SiH3)2N(tBu); DEAS, SiH3NEt2; DTBAS, SiH3N(tBu)2; BDEAS, SiH2(NEt2)2; BDMAS, SiH2(NMe2)2; BTBAS, SiH2 (NHtBu)2; BITS, SiH2(NHSiMe3)2; DIPAS, SiH3N(iPr)2; TEOS, Si(OEt)4; SiCl4; HCD, Si2Cl6; 3DMAS, SiH(N(Me)2)3; BEMAS, SiH2[N(Et)(Me)]2; AHEAD, Si2(NHEt)6; TEAS, Si(NHEt)4; Si3H8; DCS, SiH2Cl2; SiHI3; SiH2I2, derivatives thereof or mixtures thereof.

4. The method according to claim 1, wherein: The second gas includes an oxygen-containing gas.

5. The method according to claim 4, wherein: The second gas includes at least one of O2, NO, N2O, NO2, O3 or a mixture thereof.

6. The method according to claim 1, wherein: The third gas includes a nitrogen-containing gas.

7. The method according to claim 6, wherein: The third gas includes at least one of N2, NH3, NH4, N2H2, N2H4 or a mixture thereof.

8. The method according to claim 1, wherein: The fourth gas includes an inert gas.

9. The method according to claim 1, wherein: In the step of supplying the second gas and the step of supplying the fourth gas, a power between about 50 W and about 400 W or a power between about 100 W and about 300 W is applied to the reaction chamber.

10. The method according to claim 1, wherein: The third gas is activated in a remote chamber and supplied to the reaction chamber.

11. The method according to claim 1, wherein: The fourth gas is supplied throughout the step of forming a film and the step of treating the film, and the third gas and the fourth gas are activated at the same time.

12. The method according to claim 10, wherein: A power between about 1000 W and about 10,000 W or a power between about 2000 W and about 8000 W is applied to the remote chamber.

13. The method according to claim 1, wherein: The step of forming a film is repeated multiple times.

14. The method according to claim 13, wherein: The cycle ratio of the step of forming the film to the step of treating the film is 5:1 or less.

15. The method according to claim 14, wherein: The step of forming the film and the step of treating the film are repeated multiple times until the gap is filled with the film.

16. The method according to claim 1, wherein: The temperature of the substrate support within the reaction chamber is between about 200°C and about 400°C, or between about 250°C and 350°C.

17. A substrate processing chamber for processing a substrate having a gap, comprising: Reaction chamber; a remote chamber connected to the reaction chamber; a connection unit connecting the reaction chamber to a remote chamber; a gas supply unit connected to the reaction chamber and the remote chamber; as well as A power supply unit for supplying power to the reaction chamber and the remote chamber, wherein the power supply unit comprises: a first power source connected to the reaction chamber; a second power source connected to the remote room; and The controller is used to control the first power source and the second power source.

18. The substrate processing chamber of claim 17, wherein: The gas supply unit includes a first gas supply line, a second gas supply line, a third gas supply line and a fourth gas supply line, The first gas supply line supplies a first gas to the reaction chamber, the second gas supply line supplies a second gas to the reaction chamber, the third gas supply line supplies a third gas to the remote chamber, and the fourth gas supply line supplies a fourth gas to the reaction chamber. The gas supply unit further comprises a first gas flow control unit for the first gas supply pipeline, a second gas flow control unit for the second gas supply pipeline, a third gas flow control unit for the third gas supply pipeline and a fourth gas flow control unit for the fourth gas supply pipeline.

19. The substrate processing chamber of claim 18, wherein the controller controls the first power source and the second power source to apply power to the reaction chamber and the remote chamber simultaneously.

20. The substrate processing chamber of claim 17, wherein: The substrate processing chamber is configured to perform the method of claim 1 .

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