Photosensitive polyimide composition, pattern manufacturing method, structure, component and equipment

Abstract

The invention discloses a photosensitive polyimide composition, a pattern manufacturing method, a structure, a part and equipment, and the composition comprises the following raw materials in parts by weight: 100 parts of block polymer which can be dissolved in an alkaline aqueous solution; 5-30 parts of a thermal crosslinking agent which is selected from a crosslinking agent containing an epoxy group and a crosslinking agent containing CH2OR; 0.5 to 5 parts of a photoacid generator; and 0.5 to 10 parts of a silane coupling agent. The photosensitive polyimide composition provided by the invention has excellent alkali solubility, can copy fine patterns, has low warping stress after low-temperature curing, and has high chemical stability and cohesiveness.

Description

Technical Field

[0001] The present invention relates to new material technology, in particular to a photosensitive polyimide composition, a method for manufacturing a pattern, a structure, a component and an apparatus. Background Art

[0002] As semiconductor packaging density gradually increases, PSPI materials are also gradually developing towards low-temperature curing, high sensitivity, high resolution, and low warpage stress.

[0003] WO2018225676A1 discloses a method of lowering the glass transition temperature of a PI polymer and assisting with a thermal alkali generator. This method can achieve low-temperature curing at a temperature of 200-230°C to obtain a negative PSPI cured product with excellent adhesion. However, this method cannot achieve the requirements of high sensitivity, high resolution and low warpage stress.

[0004] CN102575139A discloses a method of using a chemically imidized PI polymer with a phenolic hydroxyl group or a carboxyl group, assisted by a suitable crosslinking agent. This method can achieve low-temperature curing at a temperature of 200-230°C, and obtain a positive PSPI cured product with excellent chemical resistance. However, this method has a very limited effect on improving chemical resistance, and the sensitivity of this composition is generally low.

[0005] WO2008026406A1 discloses a method of using a polymer with phenolic hydroxyl groups, such as poly(p-hydroxystyrene) or phenolic resin, supplemented by a cross-linking agent and toughened with rubber particles, to obtain a composition that cures at a low temperature of 200°C, has a fast sensitivity, a high resolution, and low warping stress. However, the cured product obtained in this way has poor mechanical properties and limited improvement in toughness, which may lead to reliability problems.

[0006] The information disclosed in this background technology section is only intended to enhance the understanding of the overall background of the invention and should not be regarded as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art. Summary of the invention

[0007] The object of the present invention is to provide a photosensitive polyimide composition, a method for manufacturing a pattern, a structure, a component and an apparatus, wherein the photosensitive polyimide composition has excellent alkali solubility and can replicate fine patterns, and has low warpage stress after low-temperature curing, high chemical stability and adhesion.

[0008] To achieve the above object, an embodiment of the present invention provides a photosensitive polyimide composition, the raw materials of which include the following components, measured in parts by weight:

[0009] 100 parts of block polymer, which is soluble in alkaline aqueous solution and has the structural formula

[0010] Among them, R is Ar1 is selected from a tetrasubstituted organic group, Ar2 is selected from a disubstituted organic group; m+n=5-200, n / (m+n)=0.05-1, k=2-10;

[0011] 5-30 parts of a thermal crosslinking agent, selected from a crosslinking agent containing an epoxy group and a crosslinking agent containing CH2OR;

[0012] 0.5-5 parts of photoacid generator, the structural formula of which is Wherein, R' is selected from hydrogen, an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms, X is selected from halogen, and Y is oxygen or sulfur;

[0013] Silane coupling agent 0.5-10 parts.

[0014] In one or more embodiments of the present invention, the tetrasubstituted organic group of Ar1 is selected from:

[0015]

[0016] Wherein R1-R8 are all monosubstituted organic groups, and X1 is a disubstituted group.

[0017] In one or more embodiments of the present invention, the monosubstituted organic groups of R1-R8 are independently selected from: hydrogen, halogen, C1-C5 substituted alkyl (the substitution here refers to mono- or poly-substitution by other non-alkyl groups, the same below), C1-C5 unsubstituted alkyl.

[0018] In one or more embodiments of the present invention, the monosubstituted organic group of R1-R8 is selected from the group consisting of hydrogen, fluorine, methyl and trifluoromethyl.

[0019] In one or more embodiments of the present invention, the disubstituted group of X1 is selected from the group consisting of oxygen, C1-C5 substituted or unsubstituted alkylene, sulfur, sulfone and carbonyl.

[0020] In one or more embodiments of the present invention, the disubstituted group of X1 is selected from the group consisting of oxygen, methylene, sulfur, sulfone, carbonyl, -C(CH3)2 and -C(CF3)2.

[0021] In one or more embodiments of the present invention, the disubstituted organic group of Ar2 is selected from:

[0022]

[0023] Among them, R9-R 20 All are monosubstituted organic groups, and Y is a disubstituted group.

[0024] In one or more embodiments of the present invention, R9-R 20 The monosubstituted groups are each independently selected from the group consisting of hydrogen, halogen, C1-C5 substituted alkyl, and C1-C5 unsubstituted alkyl.

[0025] In one or more embodiments of the present invention, R9-R 20 The monosubstituted groups are each independently selected from the group consisting of hydrogen, fluorine, methyl and trifluoromethyl.

[0026] In one or more embodiments of the present invention, the disubstituted group of Y is selected from oxygen, C1-C5 substituted alkylene, C1-C5 unsubstituted alkylene, sulfur, sulfone and carbonyl.

[0027] In one or more embodiments of the present invention, the disubstituted group of Y is selected from: oxygen, methylene, sulfur, sulfone, carbonyl, -C(CH3)2- and -C(CF3)2-.

[0028] In one or more embodiments of the present invention, the thermal crosslinking agent is selected from compounds shown in any of the following formulae:

[0029]

[0030] Wherein, U is selected from a disubstituted organic group containing an alicyclic ring or an aromatic ring; R 21 are independently selected from: hydrogen, a monosubstituted organic group, R 22 is selected from hydrogen, a monosubstituted organic group, and a ring structure having a substituent; R 23 is selected from hydrogen, a monosubstituted organic group; R 24 is selected from a monosubstituted organic group, n is an integer of 1-4; X2 is selected from a monosubstituted organic group, a disubstituted organic group, a trisubstituted organic group, a tetrasubstituted organic group; a is an integer of 1-4, and b is an integer of 0-3. Preferably, when a is 2, 3 or 4, R 23 Same or different, when b is 2 or 3, R 24 Same or different.

[0031] In one or more embodiments of the present invention, 100-200 parts of solvent and / or 100-1000 ppm of leveling agent are also included.

[0032] In one or more embodiments of the present invention, the method for manufacturing the pattern is to apply the photosensitive polyimide composition as described above on a supporting substrate, and perform drying, exposure, development and heating treatment to obtain the pattern.

[0033] In one or more embodiments of the present invention, the light source used for exposure is i-ray (i-line light source).

[0034] In one or more embodiments of the present invention, the photocurable structure is obtained by the method for manufacturing the above-mentioned pattern. The pattern here includes a planar structure such as (surface protection film or interlayer insulation film, etc.) or a pattern structure (such as an embossed structure, a pattern, etc.)

[0035] In one or more embodiments of the present invention, an electronic component includes a main body and the aforementioned photocurable structure formed on the main body.

[0036] In one or more embodiments of the present invention, a device includes a body and the aforementioned electronic components arranged in the body.

[0037] Compared with the prior art, the photosensitive polyimide composition, pattern manufacturing method, structure, component and equipment according to the embodiment of the present invention, the part exposed to ultraviolet light is easily soluble in alkaline aqueous solution, while the part not exposed to ultraviolet light is insoluble in alkaline aqueous solution, so that fine patterns can be effectively replicated. In addition, the photosensitive polyimide composition has excellent alkali solubility, high resolution, low warpage stress, high adhesion and good chemical resistance after low temperature curing (180-200°C). BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 It is a schematic diagram of a semiconductor packaging structure implemented according to an embodiment of the present invention. DETAILED DESCRIPTION

[0039] The specific embodiments of the present invention are described in detail below, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0040] Unless explicitly stated otherwise, throughout the specification and claims, the term “comprise” or variations such as “include” or “comprising”, etc., will be understood to include the stated elements or components but not to exclude other elements or components.

[0041] The embodiment of the present invention provides a photosensitive polyimide composition, which contains the following components:

[0042] (a) a block polymer soluble in an alkaline aqueous solution; (b) a thermal crosslinking agent; (c) a photoacid generator; (d) a silane coupling agent.

[0043] The part of the photosensitive polyimide composition exposed to ultraviolet light is insoluble in an alkaline aqueous solution, while the part not exposed to ultraviolet light is soluble in an alkaline aqueous solution, so that fine patterns can be effectively replicated. The photosensitive polyimide composition of the present invention promotes the reaction of the crosslinking agent and the resin through acid generation, increases the dissolution rate ratio (dissolution contrast) of the exposed part of the pattern to the unexposed part relative to the alkaline developer, and thus has excellent sensitivity and resolution. At the same time, the photosensitive polyimide composition has low warping stress after high-temperature curing, and has excellent chemical resistance and adhesion.

[0044] First, a standard for component (a) being soluble in an alkaline aqueous solution is described below. When a photosensitive composition obtained by dissolving component (a) alone or together with other components in any solvent is spin-coated on a substrate such as a silicon wafer to form a coating film having a thickness of about 5 μm, and the coating film is immersed in an aqueous solution of tetramethylammonium hydroxide at 20-25° C. and dissolves to form a uniform solution, the component (a) used is soluble in an alkaline aqueous solution.

[0045] The alkaline aqueous solution mentioned above refers to a tetramethylammonium hydroxide aqueous solution, a metal hydroxide aqueous solution, an organic amine aqueous solution, or the like.

[0046] The graft polymer soluble in an alkaline aqueous solution as component (a) is preferably a polyimide polymer in terms of processability and heat resistance, and the graft chain skeleton is preferably a polyparahydroxystyrene polymer.

[0047] Furthermore, component (a) is more preferably a graft copolymer of polyimide-poly(p-hydroxystyrene), a polymer having a structural unit represented by the following formula 1:

[0048]

[0049] wherein Ar1 is selected from a tetrasubstituted organic group, Ar2 is selected from a disubstituted organic group; m+n=5-200, for example, 5, 10, 15, 20, 25, 35, 40, 50, 70, 75, 80, 85, 95, 100, 110, 120, 135, 150, 160, 175, 180, 185, 190, 195 and 200, etc., any value between 5 and 200; n / (m+n)=0.05-1, for example, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1 and any value between 0.05 and 1.

[0050] Further, Ar1 is selected from any one of the tetrasubstituted organic groups represented by the following formula 2 in the same or different manner each time it appears:

[0051]

[0052] Wherein, R1-R8 are all monosubstituted organic groups, and X1 is a disubstituted group.

[0053] Specifically, R1-R8 are each independently selected from any one of hydrogen, halogen, C1-C5 substituted or unsubstituted alkyl; preferably, R1-R8 are each independently selected from any one of hydrogen, fluorine, methyl and trifluoromethyl.

[0054] X1 is selected from any one of oxygen, C1-C5 substituted or unsubstituted alkylene, sulfur, sulfone and carbonyl, and X1 is selected from any one of oxygen, methylene, sulfur, sulfone, carbonyl, C(CH3)2 and C(CF3)2.

[0055] Specifically, in Formula 1, Ar1 is a tetrasubstituted organic group, generally a residue of a tetracarboxylic dianhydride or a derivative thereof having an amide ester structure formed by a tetracarboxylic dianhydride or a derivative thereof and a diamine, preferably a tetrasubstituted aromatic group, preferably a residue of a tetracarboxylic dianhydride or a derivative thereof having the following structure, wherein all four binding sites are present on the aromatic ring. Examples of such tetracarboxylic dianhydrides include: pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 2,2',3,3'-benzophenonetetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1,1- Bis(3,4-dicarboxyphenyl)ethane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, 1,2,5,6-naphthalenetetracarboxylic acid dianhydride, 9,9-bis(3,4-dicarboxyphenyl)fluorene dianhydride, 9 Aromatic tetracarboxylic acid dianhydrides such as 2,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluorene dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride, 2,3,5,6-pyridinetetracarboxylic acid dianhydride, 3,4,9,10-perylenetetracarboxylic acid dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, and aliphatic tetracarboxylic acid dianhydrides such as butanetetracarboxylic acid dianhydride and 1,2,3,4-cyclopentanetetracarboxylic acid dianhydride. These may be used alone or in combination of two or more.

[0056] Further, Ar2 is selected from any one of the disubstituted organic groups shown in Formulae 3-1 to 3-12, the same or different each time it appears:

[0057]

[0058] Among them, R9-R 20 are all monosubstituted organic groups, and Y is a disubstituted group;

[0059] Specifically, R9-R 20 Each is independently selected from any one of hydrogen, halogen, C1-C5 substituted or unsubstituted alkyl; preferably, R9-R 20 Each is independently selected from any one of hydrogen, fluorine, methyl and trifluoromethyl.

[0060] Y is selected from any one of the following oxy groups providing two substitution positions, C1-C5 substituted or unsubstituted alkylene groups, sulfur, sulfone groups and carbonyl groups; more preferably, Y is selected from any one of the following oxy groups providing two substitution positions, methylene groups, sulfur groups, sulfone groups, carbonyl groups, C(CH3)2 and C(CF3)2.

[0061] Furthermore, in Formula 1, Ar2 is a disubstituted organic group, generally an amide structure formed by an amino acid and a diamine, and is derived from an amino acid residue, preferably a disubstituted aromatic group, preferably an amino acid residue having the following structure, wherein both binding sites are present on the aromatic ring, and such amino acids include p-aminobenzoic acid, m-aminobenzoic acid, ortho-aminobenzoic acid, etc. They can be used alone or in combination of two or more.

[0062] In addition, in order to improve adhesion to the substrate, as long as the heat resistance is not damaged, the Ar2 part can be selected to copolymerize with a certain proportion of aliphatic groups with a siloxane structure, preferably 1-10 mol% of bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc.

[0063] The terminal groups of the aromatic polyamide shown in Formula 1 are carboxylic acid or amine depending on the input ratio of Ar1 and Ar2. As required, one or two end-capping agents may react with the polymer ends to make one or both ends saturated aliphatic groups, unsaturated aliphatic groups, carboxyl groups, phenolic hydroxyl groups, sulfonic acid groups or mercapto groups, etc. In this case, the end-capping rate is preferably 30-100%.

[0064] It should be noted that: (1) the above R1-R 20 The halogen mentioned in is not limited to F, and may also be bromine, chlorine, and the like.

[0065] (2) The above R1-R 20 The C1-C5 substituted or unsubstituted alkyl mentioned in the above may be a C1-C3 substituted or unsubstituted alkyl, for example, it may be an unsubstituted alkyl such as methyl, ethyl, propyl, n-butyl, isopropyl, isobutyl, tert-butyl, or a substituted alkyl such as trifluoromethyl, trifluoroethyl, difluoromethyl, trichloromethyl.

[0066] (3) The above R1-R 20 The C1-C5 substituted or unsubstituted alkylene mentioned in the above may be C1-C3 unsubstituted alkylene, such as methylene, ethylene, propylene and other unsubstituted alkylene, or may be C1-C3 substituted alkylene, such as halogen (fluorine, bromine, chlorine) substituted methylene, halogen substituted ethylene, etc.

[0067] The solubility of the polymer in alkaline aqueous solution is derived from the phenolic hydroxyl group, so it is preferred to contain a certain proportion of the structure. More preferably, k=2 to 10. Too large a k unit will cause a certain film thickness loss in the exposed area, resulting in an inability to effectively replicate the pattern. Therefore, by adjusting the grafting amount of p-hydroxystyrene, the dissolution rate of the polymer in alkaline aqueous solution changes, so that a photosensitive grafted composition with a moderate dissolution rate can be obtained.

[0068] Further, the polymer m+n is the number of repeating structural units of component (a), and the value of m+n is 5 to 200. When m+n is less than 5, the viscosity of the composition is too low, resulting in the composition being unable to be used as a thick film, and when m+n is greater than 200, the composition becomes too viscous, affecting coating.

[0069] When the structures represented by Formula 1 each contain fluorine in an amount greater than or equal to 10% by weight, during development with an alkaline aqueous solution, an appropriate degree of water resistance is exhibited at the interface of the film to prevent penetration at the interface. However, when the fluorine content exceeds 20% by weight, the solubility in the alkaline aqueous solution is reduced. Therefore, the fluorine content is preferably 10-20% by weight.

[0070] The molecular weight of component (a) is preferably 3000 to 200000, more preferably 5000 to 100000, as a weight average molecular weight. The molecular weight here is a value measured by gel permeation chromatography and converted from a standard polystyrene calibration curve.

[0071] In the embodiments of the present invention, the graft polymer having the structural unit shown in Formula 1 is generally prepared by polycondensation of dianhydride and diamine to obtain a polyamic acid polymer, which is then chemically imidized to obtain a polyimide polymer, which is then chloromethylated and xanthate-esterified to obtain a macromolecular initiator, and then grafted polymerized to obtain a graft copolymer of polyimide-g-poly(p-hydroxystyrene).

[0072] Specifically, in the first step, polyamic acid can be prepared by reacting diamine with dianhydride, and then polyimide can be prepared by chemical imidization. In the second step, polyimide is chloromethylated and xanthate-esterified to obtain a macroinitiator. In the third step, the macroinitiator prepared in the second step is grafted with p-hydroxystyrene through RAFT polymerization to prepare a grafted polymer.

[0073] The photosensitive polyimide composition provided by the embodiment of the present invention may contain (b) a thermal crosslinking agent for the purpose of easily obtaining a cured film. As component (B1), it is a crosslinking agent having an epoxy group, and as component (B2), it is a crosslinking agent having a -CH2OR (R is hydrogen or a monosubstituted organic group) group, which reacts with the polymer as component (a) to crosslink during the heat treatment process after coating, exposing and developing the photosensitive polymer composition of the present invention, or a compound that polymerizes itself during the heat treatment process. In addition, the crosslinking agent as component (B2) has affinity for alkaline aqueous solutions and can increase the dissolution rate in alkaline aqueous solutions.

[0074] In the present invention, component (B1) is a crosslinking agent having an epoxy group in its structure. Component (B1) is selected from the compounds represented by the following formula 4-1,

[0075]

[0076] The specific examples of the compound shown in the following formula 4-1 include, for example, Epiclon (registered trademark) 850-S, Epiclon HP-4032, Epiclon HP-7200, Epiclon HP-820, Epiclon HP-4700, Epiclon EXA-4710, Epiclon HP-4770, Epiclon EXA-859CRP, Epiclon EXA-4880, Epiclon EXA-4850, Epiclon EXA-4816, Epiclon EXA-4822 (above, trade name, Dainippon Ink and Chemicals, Inc.), Rikaresin (registered trademark) BPO-20E, Rikaresin BEO-60E (above, trade name, New Japan Chemical), EP-4003S, EP-4000S (above, trade name, ADEKA), etc. They can be used alone or in combination of two or more. As this component, these compounds may be used alone or in combination of two or more.

[0077] In the present invention, component (B2) is a crosslinking agent having a -CH2OR (R is hydrogen or a monosubstituted organic group) group in its structure. The compound may have at least one of the group, but preferably has at least two. Component (B2) is selected from the compounds shown in the following formula 4-2-1 or 4-2-2.

[0078]

[0079] In formula 4-2-1, R 21 are each independently hydrogen or a monosubstituted organic group, R22 The organic groups which are independently hydrogen or monosubstituted may combine with each other to form a ring structure which may have a substituent.

[0080] In formula 4-2-2, R 23 is selected from hydrogen or a monosubstituted organic group, R 24 is selected from a monosubstituted organic group, n is an integer of 1-4, and X is selected from a monosubstituted to tetrasubstituted organic group. a is an integer of 1-4, and b is an integer of 0-3. When a is 2, 3 or 4, R 23 Same or different, when b is 2 or 3, R 24 Same or different.

[0081] The following formula 4-2-1-1 shows specific examples of the compound represented by formula 4-2-1. These compounds can be used alone or in combination of two or more.

[0082]

[0083] Among them, R 25 is an alkyl group having 1 to 20 carbon atoms, preferably an alkyl group having 1 to 6 carbon atoms, R 26 It is an alkyl group having 1 to 10 carbon atoms.

[0084] The following formula 4-2-2-1 shows specific examples of the compound represented by formula 4-2-2. These compounds can be used alone or in combination of two or more.

[0085]

[0086] In addition, in formula 4-2-2, as the monosubstituted to tetrasubstituted organic groups of X, there can be listed alkyl groups having 1 to 10 carbon atoms, alkylene groups having 2 to 10 carbon atoms (such as ethylene), arylene groups having 6 to 30 carbon atoms (such as phenylene), or groups obtained by replacing part or all of the hydrogen atoms of these hydroxyl groups with halogens such as fluorine, and these groups can further include phenyl, sulfone, carbonyl, ether bond, thioether bond, amide bond, etc. 23 It is preferably hydrogen, alkyl or alkenyl. The carbon number of the alkyl or alkenyl group is preferably 1-20. 24 It is preferably an alkyl group, an alkenyl group, an alkoxyalkyl group or a hydroxymethyl group, and the carbon number is preferably 1-20.

[0087] The purity of the compound represented by the above formula 4-2 is preferably 75% or more, more preferably 85% or more. When the purity is 85% or more, the storage stability is excellent, and the crosslinking reaction of the polyimide composition can be fully carried out. In addition, since the unreacted groups that become water-absorbing groups can be reduced, the water absorption of the polyimide composition can be reduced. As a method for obtaining a high-purity thermal crosslinking agent, recrystallization, distillation, etc. can be cited. The purity of the thermal crosslinking agent can be obtained by liquid chromatography.

[0088] Relative to 100 parts by mass of the polyimide of component (a), the content of the thermal crosslinking agent of component (b) is preferably 5 parts by mass or more, more preferably 10 parts by mass or more. If it is 5 parts by mass or more, the crosslinking density of the cured film is improved, the chemical resistance is high, and there is low curing warpage, and if it is 10 parts by mass or more, the chemical resistance is higher, the low curing warpage is better, and higher mechanical properties can be obtained at the same time. In addition, from the perspective of composition storage stability and mechanical strength, it is preferably less than 30 parts by mass.

[0089] Further, the content of b1 is 5-15 parts by weight, for example, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts, 10 parts, 11 parts, 12 parts, 13 parts, 14 parts and 15 parts, etc., any value between 5-15 parts; the content of b2 is 0.1-15 parts, for example, 0.1 parts, 0.5 parts, 1 parts, 2 parts, 5 parts, 7 parts, 8 parts, 10 parts, 13 parts, 14 parts and 15 parts, etc., any value between 0.1-15 parts.

[0090] In the present invention, the photoacid generator as component (c) refers to a compound that generates an acid by exposure to radiation or the like. Under the action of the acid, the functional group of the crosslinking agent reacts with the alkali-soluble resin, which is selected from the following

[0091] Compound represented by formula 5

[0092]

[0093] Here, R' represents hydrogen, an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms, X represents a halogen, and Y represents oxygen or sulfur. This triazine derivative has a wide absorption in the g-ray, h-ray and i-ray regions, and has a higher acid generation efficiency and a higher residual film rate than other radiation-sensitive acid generators having a triazine skeleton.

[0094] In Formula 5, R represents hydrogen, an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms, X represents a halogen, and Y represents oxygen or sulfur. Examples of alkyl groups having 1 to 4 carbon atoms in R in Formula 5 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, and the like. In addition, alkoxy groups having 1 to 4 carbon atoms include methyloxy, ethoxy, propoxy, isopropoxy, n-butoxy, isobutoxy, sec-butoxy, and the like as examples. In addition, R is preferably hydrogen or an alkyl group having 1 to 4 carbon atoms, hydrogen, methyl, or ethyl.

[0095] In the above formula 5, X representing halogen is preferably fluorine, chlorine, bromine or iodine, and more preferably chlorine. Specific s-triazine derivatives represented by formula 5 include 2-[2-(furan-2-yl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine, 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine, and the like.

[0096] The content of the photoacid generator (c) is preferably 0.5-5 parts, more preferably 1-3 parts, for example, 1 part, 1.5 parts, 2 parts, 2.5 parts, 3 parts, etc., relative to 100 parts by weight of the polyimide of the component (a). By setting the content of the photoacid generator to the above range, higher sensitivity can be achieved.

[0097] The polyimide composition of the present invention further contains (d) a silane coupling agent, which is generally an organic silane compound. Examples of the organic silane compound include: γ-aminopropyl trimethoxysilane, γ-aminopropyl triethoxysilane, vinyl triethoxysilane, vinyl trimethoxysilane, γ-glycidyloxypropyl triethoxysilane, γ-glycidyloxypropyl trimethoxysilane, γ-methacryloxypropyl trimethoxysilane, γ-acryloxypropyl trimethoxysilane, γ-ureidopropyl triethoxysilane, Alkane, 3-mercaptopropyltrimethoxysilane, 3-isocyanatepropyltriethoxysilane, bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, triethoxysilylpropylethyl carbamate, 3-(triethoxysilyl)propylsuccinic anhydride, phenyltriethoxysilane, phenyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-triethoxysilyl-N-(l,3-dimethylbutylene)propylamine, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, etc.

[0098] When an organosilane compound is included, the adhesion between the photosensitive polyimide composition and the substrate after curing can be improved. When an organosilane compound is included, the content of the organosilane compound is more preferably 0.5-15 parts by mass, and more preferably 0.5-10 parts by mass relative to 100 parts by mass of component (a). For example, any value between 0.5-15 parts such as 0.5 parts, 1 parts, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts, 1 part, 11 parts, 12 parts, 13 parts, 14 parts and 15 parts.

[0099] The polyimide composition of the present invention further contains (e) a solvent, preferably an organic solvent. For example, ketones, esters, lactones, ethers, halogenated hydrocarbons, hydrocarbons, etc. can be used. Specific examples include: polar solvents such as γ-butyrolactone, N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethyl sulfoxide, hexamethylphosphoric triamide, dimethylimidazolidinone, tetraethyl urea, tetramethyl urea, ethyl lactate, 3-methoxy-N,N-dimethylpropaneamide and N-acetyl-ε-caprolactam. Other examples include acetone, diethyl ketone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, diethyl malonate, diethyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, trichloroethane, chlorobenzene, o-dichlorobenzene, hexane, heptane, octane, benzene, toluene, xylene, 1-methoxy-2-propanol, 1-methoxy-2-acetoxypropane, and propylene glycol 1-monomethyl ether 2-acetate. Component (e) may be used alone or in combination of two or more.

[0100] When the component (e) is included, the amount of the component (e) is preferably 50 to 1000 parts by mass, more preferably 100 to 200 parts by mass, relative to 100 parts by mass of the component (a), for example, 50 parts, 60 parts, 70 parts, 100 parts, 150 parts, 200 parts, 300 parts, 400 parts, 500 parts, 600 parts, 700 parts, 800 parts, 900 parts, and any value between 50 and 1000 parts.

[0101] The present invention may further contain (f) a leveling agent, and the leveling agent may be a surfactant, so as to improve the coating property between the substrate and the substrate. Examples of the surfactant include fluorine-based surfactants such as Fluorad (trade name, manufactured by Sumitomo 3M Co., Ltd.), Megafac (trade name, manufactured by DIC Co., Ltd.), and Surflon (trade name, manufactured by Asahi Glass Co., Ltd.); organic siloxane surfactants such as KP341 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.), DBE (trade name, manufactured by Chisso Corporation), Polyflow, Glanol (trade name, manufactured by Kyoeisha Chemical Co., Ltd.), and BYK (trade name, manufactured by BYK-Chemie GmbH); acrylic polymer surfactants such as Polyflow (trade name, manufactured by Kyoeisha Chemical Co., Ltd.); and the like.

[0102] Next, the method for producing the photosensitive polyimide composition provided by an embodiment of the present invention is described. For example, by uniformly mixing the above-mentioned (a)-(d) components and the (e)-(f) components used as needed, a photosensitive polyimide composition can be obtained. As a dissolving method, stirring and heating can be cited. When heating, it is preferred to set the heating temperature within a range that does not destroy the performance of the polyimide composition, usually room temperature-80°C. In addition, the dissolution order of each component is not particularly limited, for example, including a method of dissolving in sequence starting from a compound with low solubility. In addition, for components such as surfactants and a portion of adhesion improvers that are prone to generate bubbles when stirred and dissolved, poor dissolution of other components caused by the generation of bubbles can be prevented by adding them last after dissolving other components.

[0103] The obtained photosensitive polyimide composition is preferably filtered using a filter to remove impurities and particles. The filter pore size is 0.5-0.02 μm, for example, 0.5 μm, 0.2 μm, 0.1 μm, 0.05 μm, 0.02 μm, etc., but not limited to this. The material of the filter includes polypropylene (PP), polyethylene (PE), nylon (NY), polytetrafluoroethylene (PTFE), etc., preferably polyethylene and nylon. When the photosensitive polyimide composition contains inorganic particles, it is preferred to use a filter with a pore size larger than the particle size of these inorganic particles.

[0104] The cured product provided in the embodiment of the present invention can be obtained by curing the positive photosensitive polyimide composition. The cured product of the present invention can be used as a patterned cured film or a non-patterned cured film.

[0105] The method for manufacturing a patterned cured film comprises, for example, a step of coating the positive photosensitive polyimide composition on a substrate and drying it to form a photosensitive polyimide film (film forming step); a step of exposing the photosensitive polyimide film (exposure step); a step of developing the exposed photosensitive polyimide film with an alkaline aqueous solution to form a patterned polyimide film (development step); and a step of heating the patterned polyimide film (heating step). The method for manufacturing a non-patterned cured film comprises, for example, the above-mentioned film forming step and heating step. It may also further comprise an exposure step.

[0106] In the film forming process, the positive photosensitive polyimide composition is coated on a metal substrate such as Cu, a glass substrate, a semiconductor, a metal oxide insulator (such as TiO2, SiO2, etc.), a supporting substrate such as silicon nitride, for example, by dipping, spraying, screen printing, spin coating, etc. From the viewpoint of operability, the coated positive photosensitive polyimide composition can also be used by drying by heating (for example, 90-150° C., 1-5 minutes) using a hot plate, an oven, etc. The supporting substrate can also be cleaned with acetic acid, etc. before coating. The film thickness of the obtained photosensitive polyimide film is preferably 5-20 μm.

[0107] In the exposure step, for example, the photosensitive polyimide film formed on the substrate is irradiated with the above-mentioned active light rays through a mask. From the viewpoint of transparency of the component (a), irradiation with i-rays can be preferably used.

[0108] In the developing process, for example, the exposure portion of the photosensitive polyimide film after the exposure process is removed with a developer, so that the photosensitive polyimide film is patterned. As a developer, in the case of an alkali-soluble photosensitive polyimide composition, an alkali aqueous solution such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide (TMAH) can be suitably used. The alkali concentration of these aqueous solutions is preferably set to 0.1-10 mass %. Furthermore, alcohols or surfactants can also be added to the above-mentioned developer and used. They can be respectively coordinated with a range of preferably 0.01-10 mass parts, more preferably 0.1-5 mass parts relative to 100 mass parts of the developer. The photosensitive polyimide film after patterning is referred to as a patterned polyimide film.

[0109] In the heating process, by heating the pattern polyimide film or the photosensitive polyimide film, the photosensitive polyimide composition can be cured. In particular, the film obtained by curing the pattern polyimide film is called a pattern cured film. The heating temperature is preferably 150-250°C, preferably less than or equal to 230°C, more preferably greater than or equal to 170°C, and further preferably 180-200°C. The heating time is preferably 20 minutes to 6 hours, more preferably 30 minutes to 3 hours. Multi-stage heating can also be performed. The heat treatment can be performed using, for example, a quartz tube furnace, a hot plate, a rapid thermal annealing furnace, a vertical diffusion furnace, an infrared curing furnace, an electron beam curing furnace, and a microwave curing furnace. In addition, any one of the inert atmospheres such as the atmosphere or nitrogen can be selected, but when carried out under an inert atmosphere such as nitrogen, the oxidation of the pattern can be prevented, so an inert atmosphere such as nitrogen is preferred.

[0110] The cured product of the present invention can be used as an interlayer insulating film, a surface protective film, or the like.

[0111] The interlayer insulating film and the surface protection film of the present invention can be used for electronic components, etc. The electronic components of the present invention can be used for semiconductor devices, etc. The semiconductor devices can be used for various electronic devices, etc. The semiconductor packaging structure schematic diagram of the present invention is as follows Figure 1 shown.

[0112] This exhibits excellent rust prevention and adhesion effects on a supporting substrate (particularly a copper substrate or a copper alloy substrate), and can suppress discoloration of the cured film or the supporting substrate (particularly a copper substrate or a copper alloy substrate).

[0113] As the semiconductor device, for example, semiconductor packages such as wafer level chip size package (WLCSP) and fan-out wafer level package (FOWLP) can be cited. In addition, the interlayer insulating film and surface protection film of the present invention can also be used for a circuit forming substrate, and the circuit forming substrate can be used for a hard disk drive suspension, a flexible wiring board, etc.

[0114] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.

[0115] ODA: 4,4-diaminodiphenyl ether

[0116] SiDA: 1,3-bis(3-aminopropyl)tetramethyldisiloxane

[0117] ODPA: 4,4'-oxydiphthalic anhydride

[0118] Py: pyridine

[0119] Et2A: Acetic anhydride

[0120] PhA: Phthalic anhydride

[0121] NMP: N-methyl 2-pyrrolidone

[0122] TMAH: Tetramethylammonium hydroxide

[0123] CMM: Chloromethyl methyl ether

[0124] SnCl4: Tin tetrachloride

[0125] AIBN: Azobisisobutyronitrile

[0126] 4-HS: p-Hydroxystyrene

[0127] St:Styrene

[0128] 6FAP: 3,3-diamino-4,4-dihydroxydiphenyl-hexafluoropropane

[0129] Synthesis example 1

[0130] Under a dry nitrogen stream, 20.02 g (0.1 mol) of ODA was dissolved in 200 g of NMP, and the resulting solution was cooled to -10°C. Subsequently, 26.37 g (0.085 mol) of ODPA was slowly added thereto so that the temperature of the reaction solution did not exceed 0°C, and stirring was continued for 3 hours, and then 4.44 g (0.03 mol) of PhA was added, and stirring was continued for 2 hours at room temperature to obtain a polyamic acid solution.

[0131] 39.55 g of Py and 30.6 g of Et2A were added to the polyamic acid solution, the temperature was raised to 120°C, and the reaction was continued for 12 hours. After the reaction was completed, the solution was poured into 2 L of deionized water for precipitation, washed with water, and vacuum dried at 80°C to obtain a polyimide resin.

[0132]

[0133] Dissolve 5g of dried polyimide resin in 30mL of dichloroethane, add 80μL SnCl4, heat to 70℃, slowly drop 3mL of CMM into the system, and stir for 5h. After the reaction is completed, pour the solution into 300mL of methanol for precipitation, wash, and dry at 80℃ for 12h to obtain chloromethylated polyimide resin.

[0134]

[0135] Dissolve 1g of dried chloromethylated polyimide resin in 20mL NMP. After dissolution, add 0.1g potassium ethyl xanthate and react at room temperature for 24h. After the reaction is completed, pour the solution into 200mL deionized water for precipitation and dry at 80℃ for 12h to obtain a macromolecular initiator.

[0136]

[0137] Dissolve 1g of the dried macromolecular initiator in 20mL of NMP. After dissolution, heat to 65°C, drop 3g of 4-HS, and then add 0.01g of AIBN to carry out RAFT polymerization, and continue the reaction for 2h. After the reaction is completed, cool the solution to room temperature, pour it into 200mL of deionized water for precipitation, wash it with ethanol several times, and dry it at 80°C for 12h to obtain polyimide-g-poly(p-hydroxystyrene) graft copolymer A1.

[0138]

[0139] The specific test method is as follows:

[0140] (1) Determination of molecular weight

[0141] The number average molecular weight was determined by gel permeation chromatography (GPC) under the following conditions using standard polystyrene conversion. The number average molecular weight of polymer A was 39,000. The measurement was performed using 1 mL of a solution containing 0.5 mg of A and a solvent of [tetrahydrofuran (THF) / dimethylformamide (DMF) = 1 / 1 (volume ratio)].

[0142] Measuring device: Detector L4000UV manufactured by Hitachi, Ltd.

[0143] Pump: L6000 manufactured by Hitachi Manufacturing Co., Ltd.

[0144] C-R4A Chromatopac manufactured by Shimadzu Corporation

[0145] Measurement conditions: Chromatographic column Gelpack GL-S300MDT-5 × 2

[0146] Eluent: THF / DMF=1 / 1 (volume ratio), LiBr (0.03 mol / L), H3PO4 (0.06 mol / L) Flow rate: 1.0 mL / min, Detector: UV270 nm

[0147] (2) Determination of grafting ratio n / (m+n)

[0148] In addition, NMR measurement was performed under the following conditions, and the grafting ratio of A1 was calculated to be 40%.

[0149] Measurement equipment: AV400M manufactured by Bruker BioSpin

[0150] Magnetic field strength: 400MHz

[0151] Reference material: Tetramethylsilane (TMS)

[0152] Solvent: dimethyl sulfoxide (DMSO)

[0153] (3) Determination of grafting amount k

[0154] The grafting amount of A1 was calculated by NMR measurement under the following conditions: k = 3.5

[0155] Measurement equipment: AV400M manufactured by Bruker BioSpin

[0156] Magnetic field strength: 400MHz

[0157] Reference material: Tetramethylsilane (TMS)

[0158] Solvent: dimethyl sulfoxide (DMSO)

[0159] Synthesis example 2

[0160] Add 192g methanol, 172.32g 4-HS, 19.53g St and 15g AIBN to a four-necked flask in turn, and stir to dissolve until clear. Vacuum and replace the air in the reaction vessel with nitrogen, heat to 75°C, react for 18h, and stop the reaction. Slowly add the prepared sodium methoxide (0.4g) solution to the reaction system, react for 6h, extract 2 to 3 times with n-heptane and reaction liquid in a mass ratio of 1:1, remove the unreacted monomers and initiators in the reaction liquid, replace the methanol in the reaction liquid with PGMEA, and obtain the PGMEA solution of the required concentration. PHS resin A2 is obtained, and the ratio of hydroxystyrene to styrene repeating units is 80 / 20.

[0161]

[0162] Synthesis example 3

[0163] Under a dry nitrogen stream, 36.63 g (0.1 mol) of 6FAP was dissolved in 200 g of NMP, and the resulting solution was cooled to -10°C. Subsequently, 26.37 g (0.085 mol) of ODPA was slowly added thereto so that the temperature of the reaction solution did not exceed 0°C, and stirring was continued for 3 hours, and then 4.44 g (0.03 mol) of PhA was added, and stirring was continued for 2 hours at room temperature to obtain a polyamic acid solution.

[0164] 39.55 g of Py and 30.6 g of Et2A were added to the polyamic acid solution, the temperature was raised to 120°C, and the reaction was continued for 12 hours. After the reaction was completed, the solution was poured into 2 L of deionized water for precipitation, washed with water, and vacuum dried at 80°C to obtain polyimide resin A3.

[0165]

[0166] Examples 1-10 and Comparative Examples 1-2

[0167] The photosensitive polyimide compositions of Examples 1 to 5 and Comparative Example 1 were prepared according to the components and blending amounts shown in Table 1-2. The blending amounts in Table 1 are parts by mass of each component relative to 100 parts by mass of the component (a).

[0168] The components used are as follows.

[0169] Component (b): Thermal crosslinking agent

[0170]

[0171]

[0172] Component (c): Photosensitizer

[0173]

[0174] Component (d): Silane coupling agent: γ-ureapropyltriethoxysilane Component (e): Solvent

[0175] e1: GBL (γ-butyrolactone)

[0176] e2: EL (ethyl lactate)

[0177] Table 1

[0178]

[0179] Table 2

[0180]

[0181] The performance of the photosensitive polyimide compositions prepared in the examples and comparative examples was evaluated as follows:

[0182] (1) Preparation of developing film

[0183] The photosensitive polyimide composition (varnish) prepared in the examples and comparative examples was spin-coated on an 8-inch silicon wafer, and then heat-treated (prebaked) at 120°C for 3 minutes using a hot plate (coating and developing device Mark-7 manufactured by Tokyo Electron Ltd.) to prepare a prebaked film with a thickness of 6 μm. An i-line stepper (manufactured by Nikon Corporation, NSR-2005i9C) was used at 50 to 400 mJ / cm 2 Exposure, 10mJ / cm 2 The obtained prebaked film was exposed in steps of . After exposure, the photosensitive polyimide composition was exposed at 100° C. for 1 minute and then baked. After the photosensitive polyimide composition was baked after exposure, it was developed for 90 seconds using a 2.38 wt % tetramethylammonium (TMAH) aqueous solution (manufactured by Mitsubishi Gas Chemical Co., Ltd., ELM-D), and then rinsed with pure water to obtain a developed film.

[0184] (2) Film thickness measurement method

[0185] The film thickness after prebaking and after development was measured using a film thickness measuring device Filmtris F50 at a refractive index of 1.63.

[0186] (3) Determination of warpage

[0187] The varnish was applied by spin coating using a coating and developing device ACT-8 and prebaked so that the film thickness after prebaking at 120°C for 3 minutes was 10 μm. Then, the temperature was raised to 200°C at a rate of 3.5°C / min under the condition of an oxygen concentration of 20 ppm or less using an inert oven, and heat-treated at 200°C for 1 hour. When the temperature became 50°C or less, the wafer was taken out and the cured film was measured using a pressure device FLX2908 (manufactured by KLA Tencor). As a result, the case of 35 MPa or more was considered insufficient (D), the case of 30 MPa or more and less than 35 MPa was considered good (C), the case of 20 MPa or more and less than 30 MPa was considered better (B), and the case of less than 20 MPa was considered the best (A).

[0188] (4) Alkali solubility-minimum development time evaluation

[0189] The photosensitive composition (varnish) prepared in the examples and comparative examples was spin-coated on an 8-inch silicon wafer, and then heat-treated (prebaked) at 120°C for 3 minutes using a hot plate (manufactured by Tokyo Electron Ltd., coating and developing device Mark-7) to prepare a prebaked film with a thickness of 10 μm. The film was developed using a 2.38 wt% tetramethylammonium (TMAH) aqueous solution, and the minimum developing time was recorded after the film was completely dissolved. The results are shown in Table 3.

[0190] (5) Chemical resistance evaluation

[0191] Apply to the above solidified product with a pipette. Place the solidified product after application in a nitrogen oven at 200°C and keep it for 60 minutes. Then, transfer the solidified product from the hot plate and cool it to room temperature. Wash the cooled solidified product with NMP at 45°C and soak it for 1 hour, then measure the film thickness.

[0192] The film thickness change rate (%) was calculated from the film thickness change. A positive value means that the film expanded, and a negative value means that the film dissolved. The results are shown in Table 3.

[0193] (6) Adhesion evaluation

[0194] A cured product was produced on a Cu substrate using the above-mentioned method for producing a cured product. The cured product was cut into 10×10 grids using a crosscut guide (manufactured by COAT-TECH Co., Ltd.) with a shear knife, thereby dividing the cured product into 100 small pieces.

[0195] An adhesive tape (manufactured by 3M Japan Ltd.) was attached to the cured product, and then the adhesive tape was peeled off. The adhesiveness was evaluated as follows based on the number of small pieces of the cured product peeled off from the substrate when the adhesive tape was peeled off.

[0196] A: The number of remaining grids is 100 to 80.

[0197] B: The number of remaining grids is less than 80.

[0198] The results are shown in Table 3.

[0199] (7) Evaluation of elongation at break

[0200] The varnish was applied by spin coating using a coating and developing device ACT-8 and prebaked to a film thickness of 10 μm after prebaking at 120°C for 3 minutes. Then, the temperature was raised to 200°C at a rate of 3.5°C / min under an oxygen concentration of 20 ppm or less using an inert oven, and heat treated at 200°C for 1 hour. When the temperature became below 50°C, the wafer was taken out, the film was peeled off, and cut into 4 mm × 8 mm strips, and tensile testing was performed using DAGE4000.

[0201] As a result, the case where the elongation at break was 30% or more was regarded as excellent (A), the case where it was 20-30% was regarded as good (B), the case where it was 10-20% was regarded as poor (C), and the case where it was less than 10% was regarded as very poor (D).

[0202] Table 3

[0203]

[0204] As can be seen from Table 3, the photosensitive polyimide compositions provided by Examples 1-10 of the present invention all have strong alkali solubility, excellent low warpage stress, and excellent chemical resistance. Compared with the examples, Comparative Example 1 has poor toughness and slightly poor alkali solubility. Comparative Example 2 has high warpage stress, poor alkali solubility, poor bonding strength on the substrate, and poor chemical resistance stability.

[0205] The foregoing description of specific exemplary embodiments of the present invention is for the purpose of illustration and demonstration. These descriptions are not intended to limit the present invention to the precise form disclosed, and it is clear that many changes and variations can be made based on the above teachings. The purpose of selecting and describing the exemplary embodiments is to explain the specific principles of the present invention and its practical application, so that those skilled in the art can realize and utilize various different exemplary embodiments of the present invention and various different selections and changes. The scope of the present invention is intended to be limited by the claims and their equivalents.

Claims

1. A photosensitive polyimide composition, the raw materials of which include the following components, in parts by weight: 100 parts of a block polymer, which is soluble in an alkaline aqueous solution and has the structural formula in, R is Ar1 is selected from a tetrasubstituted organic group, Ar2 is selected from a disubstituted organic group; m+n=5-200, n / (m+n)=0.05-1, k=2-10; 5-30 parts of a thermal crosslinking agent, selected from a crosslinking agent containing an epoxy group and a crosslinking agent containing CH2OR; 0.5-5 parts of photoacid generator, the structural formula of which is Wherein, R' is selected from hydrogen, an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms, X is selected from halogen, and Y is oxygen or sulfur; Silane coupling agent 0.5-10 parts.

2. The photosensitive polyimide composition according to claim 1, wherein The tetrasubstituted organic group of Ar1 is selected from: Wherein R1-R8 are all monosubstituted organic groups, and X1 is a disubstituted group.

3. The photosensitive polyimide composition according to claim 2, characterized in that The monosubstituted organic groups of R1-R8 are each independently selected from the group consisting of hydrogen, halogen, C1-C5 substituted alkyl, and C1-C5 unsubstituted alkyl.

4. The photosensitive polyimide composition according to claim 3, wherein The monosubstituted organic group of R1-R8 is selected from the group consisting of hydrogen, fluorine, methyl and trifluoromethyl.

5. The photosensitive polyimide composition according to claim 2, wherein The disubstituted group of X1 is selected from the group consisting of oxygen, C1-C5 substituted or unsubstituted alkylene, sulfur, sulfone and carbonyl.

6. The photosensitive polyimide composition according to claim 5, wherein The disubstituted group of X1 is selected from the group consisting of oxygen, methylene, sulfur, sulfone, carbonyl, -C(CH3)2 and -C(CF3)2.

7. The photosensitive polyimide composition according to claim 1, wherein The disubstituted organic group of Ar2 is selected from: Among them, R9-R 20 All are monosubstituted organic groups, and Y is a disubstituted group.

8. The photosensitive polyimide composition according to claim 7, wherein R9-R 20 The monosubstituted groups are each independently selected from the group consisting of hydrogen, halogen, C1-C5 substituted alkyl, and C1-C5 unsubstituted alkyl.

9. The photosensitive polyimide composition according to claim 8, wherein R9-R 20 The monosubstituted groups are each independently selected from the group consisting of hydrogen, fluorine, methyl and trifluoromethyl.

10. The photosensitive polyimide composition according to claim 7, wherein The disubstituted group of Y is selected from the group consisting of oxygen, C1-C5 substituted alkylene, C1-C5 unsubstituted alkylene, sulfur, sulfone and carbonyl.

11. The photosensitive polyimide composition according to claim 10, wherein The disubstituted group of Y is selected from the group consisting of oxygen, methylene, sulfur, sulfone, carbonyl, -C(CH3)2- and -C(CF3)2-.

12. The photosensitive polyimide composition according to claim 1, wherein The thermal crosslinking agent is selected from the compounds shown in any of the following formulas: Wherein, U is selected from a disubstituted organic group containing an alicyclic ring or an aromatic ring; R 21 are independently selected from: hydrogen, a monosubstituted organic group, R 22 is selected from hydrogen, a monosubstituted organic group, and a ring structure having a substituent; R 23 is selected from hydrogen, a monosubstituted organic group; R 24 is selected from a monosubstituted organic group, n is an integer of 1-4; X2 is selected from a monosubstituted organic group, a disubstituted organic group, a trisubstituted organic group, a tetrasubstituted organic group; a is an integer of 1-4, and b is an integer of 0-3.

13. The photosensitive polyimide composition according to any one of claims 1 to 12, characterized in that: It also includes 100-200 parts of solvent and / or 100-1000 ppm of leveling agent.

14. A method for producing a pattern, comprising coating the photosensitive polyimide composition according to any one of claims 1 to 13 on a supporting substrate, and performing drying, exposure, development and heating treatment.

15. The method for manufacturing a pattern according to claim 14, characterized in that: The light source used for the exposure is i-ray.

16. A photocurable structure obtained by the method for manufacturing a pattern according to any one of claims 14 to 15.

17. An electronic component comprising a main body and the photocurable structure according to claim 16 formed on the main body.

18. A device comprising a body and the electronic component according to claim 17 provided to the body.

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