Bridge arm, half bridge, power module and vehicle

Abstract

The invention provides a bridge arm, a half bridge, a power module and a vehicle, and the bridge arm comprises a substrate which is provided with a first axis; a plurality of first semiconductor switches disposed on the substrate; the plurality of second semiconductor switches are arranged on the substrate, and the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along the first axis; the first metal wire is respectively connected with the transmitting ends of the plurality of first semiconductor switches; and the second metal wire is respectively connected with the transmitting ends of the plurality of second semiconductor switches, and the second metal wire and the first metal wire are symmetrically distributed along the first axis. According to the bridge arm, the half bridge, the power module and the vehicle disclosed by the invention, the current path difference among the semiconductor switches can be reduced by utilizing the common transmitting end structure among the plurality of first semiconductor switches and the common transmitting end structure among the plurality of second semiconductor switches, so that current sharing is realized.

Description

Technical Field

[0001] The present disclosure relates to the technical field of power modules, and in particular to a bridge arm, a half bridge, a power module and a vehicle. Background Art

[0002] A power module is a device that converts direct current into alternating current. It is widely used in the industrial field. In order to achieve high output power, the power module needs to utilize multiple semiconductor switches in parallel to accommodate larger currents. Multiple semiconductor switches are usually connected in parallel using a bonding wire. However, it is difficult to achieve current sharing between semiconductor switches by adjusting the wire length using a bonding wire. Uneven current sharing between semiconductor switches will lead to differences in losses, current and voltage stresses, and switching speeds. Such differences may cause a single semiconductor switch to be damaged due to excessive stress for a long time or the current capacity of the semiconductor switch may not be fully utilized. Summary of the invention

[0003] The present disclosure aims to solve one of the technical problems in the related art at least to some extent.

[0004] To this end, an object of the present disclosure is to provide a bridge arm, a half bridge, a power module and a vehicle.

[0005] To achieve the above-mentioned purpose, the first aspect of the present disclosure provides a bridge arm, comprising: a substrate, a plurality of first semiconductor switches, the first semiconductor switches are arranged on the substrate; a plurality of second semiconductor switches, the second semiconductor switches are arranged on the substrate, and the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along a first axis; a first metal wire, the first metal wire is respectively connected to the emitter ends of the plurality of first semiconductor switches; a second metal wire, the second metal wire is respectively connected to the emitter ends of the plurality of second semiconductor switches, and the second metal wire and the first metal wire are symmetrically distributed along the first axis.

[0006] Optionally, the bridge arm further includes: a metal sheet, which is symmetrically arranged along the first axis, and the first end of the metal sheet is respectively connected to the transmitting ends of the plurality of first semiconductor switches, and the second end of the metal sheet is respectively connected to the transmitting ends of the plurality of second semiconductor switches.

[0007] Optionally, the substrate includes: an insulating substrate; a first metal layer, the first metal layer is arranged on the insulating substrate, and the first metal layer is symmetrically arranged along the first axis, and the metal sheet is arranged on the first metal layer; a second metal layer, the second metal layer is arranged on the insulating substrate, and the second metal layer is symmetrically arranged along the first axis, the first semiconductor switch and the second semiconductor switch are respectively arranged on the second metal layer, and the collector end of the first semiconductor switch and the collector end of the first semiconductor switch are respectively connected to the second metal layer.

[0008] Optionally, the second metal layer includes: a first part, the first part is arranged on the insulating substrate, the first semiconductor switch is arranged on the first part, and the collector end of the first semiconductor switch is connected to the first part; a second part, the second part is arranged on the insulating substrate, the second semiconductor switch is arranged on the second part, and the collector end of the second semiconductor switch is connected to the second part; wherein the first part and the second part are symmetrically distributed along the first axis.

[0009] Optionally, the first metal layer includes: a third part, which is arranged on the insulating substrate, the third part is symmetrically arranged along the first axis, the third part is located between the first part and the second part, and the metal sheet is arranged on the third part; and a fourth part, which is arranged on the insulating substrate, the fourth part is symmetrically arranged along the first axis, the fourth part is connected to the third part, and the fourth part is located on one side of the second metal layer.

[0010] Optionally, a notch is provided on a side of the metal sheet away from the fourth part or on a side close to the fourth part.

[0011] Optionally, the bridge arm also includes: a first metal row, the first metal row is axially arranged along the first axis, and the first end of the first metal row is connected to the first metal layer; a second metal row, the second metal row is axially arranged along the first axis, and the first end of the second metal row is connected to the second metal layer.

[0012] Optionally, the bridge arm includes: three first semiconductor switches, the three first semiconductor switches are distributed axially at intervals along the first axis, and the three first semiconductor switches are not aligned axially along the first axis; three second semiconductor switches, the three second semiconductor switches are distributed axially at intervals along the first axis, and the three second semiconductor switches are not aligned axially along the first axis; three first metal wires arranged at intervals and three second metal wires arranged at intervals, each of the first metal wires and each of the second metal wires includes: a first end, a second end and a third end distributed axially along the first axis; wherein the transmitting ends of the three first semiconductor switches are respectively connected to the first end, the second end and the third end of each of the first metal wires, and the transmitting ends of the three second semiconductor switches are respectively connected to the first end, the second end and the third end of each of the first metal wires.

[0013] The second aspect of the present disclosure provides a half bridge, comprising: an upper bridge arm, which is the bridge arm provided in the first aspect of the present disclosure; and a lower bridge arm, which is the bridge arm provided in the first aspect of the present disclosure; wherein the first semiconductor switch emitter end and the second semiconductor switch emitter end of the upper bridge arm are connected to the first semiconductor switch collector end and the second semiconductor switch collector end of the lower bridge arm.

[0014] Optionally, the second metal row of the upper bridge arm and the first metal row of the lower bridge arm are arranged close to and in parallel with each other, and a current direction of the second metal row of the upper bridge arm is opposite to a current direction of the first metal row of the lower bridge arm.

[0015] Optionally, the notch of the upper bridge arm is located on a side of the metal sheet of the upper bridge arm close to the lower bridge arm, the notch of the lower bridge arm is located on a side of the metal sheet of the lower bridge arm away from the upper bridge arm, and a size of the notch of the upper bridge arm is different from a size of the notch of the lower bridge arm.

[0016] Optionally, the insulating substrate of the upper bridge arm is connected to the insulating substrate of the lower bridge arm, and the first metal layer of the upper bridge arm is connected to the second metal layer of the lower bridge arm.

[0017] Optionally, the half bridge also includes: an encapsulation insulating layer, which is arranged on the insulating substrate of the upper bridge arm and the insulating substrate of the lower bridge arm, and the first metal layer, the second metal layer, the first semiconductor switch, the second semiconductor switch and the metal sheet of the upper bridge arm and the lower bridge arm are all located in the encapsulation insulating layer; a first opening, which is arranged at the first metal layer of the encapsulation insulating layer close to the upper bridge arm, and the first opening is symmetrically arranged along the first axis, and the first metal row of the upper bridge arm is connected to the first metal layer of the upper bridge arm after passing through the first opening; a second opening, which is arranged at the second metal layer of the encapsulation insulating layer close to the upper bridge arm, and the second opening is symmetrically arranged along the first axis, and the second metal row of the upper bridge arm is connected to the second metal layer of the upper bridge arm after passing through the second opening; a third opening, which is arranged at the first metal layer of the encapsulation insulating layer close to the lower bridge arm, and the third opening is symmetrically arranged along the first axis, and the first metal row of the lower bridge arm is connected to the first metal layer of the lower bridge arm after passing through the third opening.

[0018] Optionally, a first hot-melt area is provided on the first metal layer of the upper bridge arm at the first opening, the first hot-melt area is symmetrically arranged along the first axis, and the first metal row of the upper bridge arm is connected to the first hot-melt area after passing through the first opening; a second hot-melt area is provided on the second metal layer of the upper bridge arm at the second opening, the second hot-melt area is symmetrically arranged along the first axis, and the second metal row of the upper bridge arm is connected to the second hot-melt area after passing through the second opening; a third hot-melt area is provided on the first metal layer of the lower bridge arm at the third opening, the third hot-melt area is symmetrically arranged along the first axis, and the first metal row of the lower bridge arm is connected to the third hot-melt area after passing through the third opening.

[0019] A third aspect of the present disclosure provides a power module, comprising: a half bridge as provided in the second aspect of the present disclosure.

[0020] A fourth aspect of the present disclosure provides a vehicle, comprising: a power module as provided in the third aspect of the present disclosure.

[0021] The technical solution provided by the present disclosure may have the following beneficial effects:

[0022] Since the first metal wire is respectively connected to the emitter ends of the plurality of first semiconductor switches, a common emitter is realized between the plurality of first semiconductor switches. Since the second metal wire is respectively connected to the emitter ends of the plurality of second semiconductor switches, a common emitter is realized between the plurality of second semiconductor switches. Therefore, when the plurality of first semiconductor switches are connected in parallel, the common emitter structure between the plurality of first semiconductor switches and the common emitter structure between the plurality of second semiconductor switches can be utilized to reduce the difference in current paths between the semiconductor switches, thereby facilitating the equalization of the current path lengths between the semiconductor switches, thereby achieving current balancing, thereby avoiding the difference in loss, the difference in current and voltage stress, and the difference in switching speed between the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0023] Additional aspects and advantages of the present disclosure will be given in part in the following description and in part will be obvious from the following description or learned through practice of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The above and / or additional aspects and advantages of the present disclosure will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0025] Figure 1 is a schematic diagram of the structure of a half bridge proposed in an embodiment of the present disclosure;

[0026] Figure 2 is a schematic diagram of the structure of a half bridge proposed in an embodiment of the present disclosure;

[0027] Figure 3 is a schematic diagram of the structure of a half bridge proposed in an embodiment of the present disclosure;

[0028] As shown in the figure: 1. substrate, 101. first axis, 102. base plate, 103. first metal layer, 104. second metal layer;

[0029] 1031, Part III, 1032, Part IV;

[0030] 1041, part 1, 1042, part 2;

[0031] 2. a first semiconductor switch;

[0032] 3. A second semiconductor switch;

[0033] 4. a first metal wire, 5. a second metal wire;

[0034] 6. Metal sheet, 601, notch;

[0035] 7. First metal row, 8. Second metal row, 9. Upper bridge arm, 10. Lower bridge arm, 11. Encapsulation insulation layer, 12. First opening, 13. Second opening, 14. Third opening, 15. First hot melt area, 16. Second hot melt area, 17. Third hot melt area. DETAILED DESCRIPTION

[0036] In order to more clearly understand the above-mentioned objectives, features and advantages of the present disclosure, the scheme of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0037] In the following description, many specific details are set forth to facilitate a full understanding of the present disclosure, but the present disclosure may also be implemented in other ways different from those described herein; it is obvious that the embodiments in the specification are only part of the embodiments of the present disclosure, rather than all of the embodiments.

[0038] like Figure 1 and Figure 2 As shown, an embodiment of the present disclosure proposes a bridge arm, including a substrate 1, a plurality of first semiconductor switches 2, a plurality of second semiconductor switches 3, a first metal wire 4 and a second metal wire 5, the first semiconductor switch 2 is arranged on the substrate 1, the second semiconductor switch 3 is arranged on the substrate 1, the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 are symmetrically distributed along the first axis 101, the first metal wire 4 is respectively connected to the transmitting ends of the plurality of first semiconductor switches 2, the second metal wire 5 is respectively connected to the transmitting ends of the plurality of second semiconductor switches 3, and the second metal wire 5 and the first metal wire 4 are symmetrically distributed along the first axis 101.

[0039] It can be understood that since the first metal wire 4 is respectively connected to the emitter ends of multiple first semiconductor switches 2, a common emitter is realized between the multiple first semiconductor switches 2, and since the second metal wire 5 is respectively connected to the emitter ends of multiple second semiconductor switches 3, a common emitter is realized between the multiple second semiconductor switches 3. Therefore, when the multiple first semiconductor switches 2 are connected in parallel, the common emitter structure between the multiple first semiconductor switches 2 and the common emitter structure between the multiple second semiconductor switches 3 can be used to reduce the current path difference between the semiconductor switches, so that it is easy to make the current path lengths between the semiconductor switches equal, and then achieve current sharing, thereby avoiding the difference in loss, current and voltage stress, and switching speed between the semiconductor switches, and thus avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0040] Since the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are symmetrically distributed along the first axis 101, and the second metal wire 5 and the first metal wire 4 are symmetrically distributed along the first axis 101, the current path lengths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are equal, which is conducive to current sharing and further improves the performance of the bridge arm.

[0041] It should be noted that the first semiconductor switch 2 and the second semiconductor switch 3 are both semiconductor switches. The specific types of the first semiconductor switch 2 and the second semiconductor switch 3 can be set according to actual needs, and there is no limitation on this. For example, the first semiconductor switch 2 and the second semiconductor switch 3 can both be silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFET), also known as SiC MOSFET, wherein the emitter end of the first semiconductor switch 2 and the second semiconductor switch 3 is the source, the collector end of the first semiconductor switch 2 and the second semiconductor switch 3 is the drain, and the control end of the first semiconductor switch 2 and the second semiconductor switch 3 is the gate; the first semiconductor switch 2 and the second semiconductor switch 3 can both be insulated gate bipolar transistors (Insulated Gate Bipolar Transistor). Transistor, IGBT), wherein the emitter end of the first semiconductor switch 2 and the second semiconductor switch 3 is an emitter, the collector end of the first semiconductor switch 2 and the second semiconductor switch 3 is a collector, and the control end of the first semiconductor switch 2 and the second semiconductor switch 3 is a gate.

[0042] Since the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 are symmetrically distributed along the first axis 101, the numbers of the first semiconductor switches 2 and the second semiconductor switches 3 correspond one to one, wherein the specific numbers of the first semiconductor switches 2 and the second semiconductor switches 3 can be set according to actual needs and are not limited thereto. For example, the numbers of the first semiconductor switches 2 and the second semiconductor switches 3 can be two, three, four, five, etc.

[0043] Since the first metal wires 4 and the second metal wires 5 are symmetrically distributed along the first axis 101, the numbers of the first metal wires 4 and the second metal wires 5 correspond to each other one by one, wherein the specific numbers of the first metal wires 4 and the second metal wires 5 can be set according to actual needs and are not limited to this. For example, the numbers of the first metal wires 4 and the second metal wires 5 can be one, two, three, four, five, etc.

[0044] The first metal wire 4 and the second metal wire 5 are both metal wires. The specific types of the first metal wire 4 and the second metal wire 5 can be set according to actual needs, and there is no limitation on this. For example, the first metal wire 4 and the second metal wire 5 can both be linear metals.

[0045] like Figure 1 and Figure 2 As shown, in some embodiments, the bridge arm also includes a metal sheet 6, which is symmetrically arranged along the first axis 101, and the first end of the metal sheet 6 is respectively connected to the transmitting end of multiple first semiconductor switches 2, and the second end of the metal sheet 6 is respectively connected to the transmitting end of multiple second semiconductor switches 3.

[0046] It can be understood that since the first end of the metal sheet 6 is respectively connected to the transmitting ends of multiple first semiconductor switches 2, and the second end of the metal sheet 6 is respectively connected to the transmitting ends of multiple second semiconductor switches 3, multiple first semiconductor switches 2 and multiple second semiconductor switches 3 are connected in parallel, so that the bridge arm can utilize multiple semiconductor switches to achieve a larger current carrying capacity, thereby achieving high output power.

[0047] At the same time, the metal sheet 6 has a larger cross-sectional area than the bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage, thereby eliminating the need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the bridge arm can fully utilize its advantage of high switching speed.

[0048] Moreover, the metal sheet 6 has a higher structural stability than the bonding wire, so that the metal sheet 6 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between the semiconductor switches equal by adjusting parameters such as the shape and size of the metal sheet 6, thereby achieving current sharing, thereby avoiding differences in losses, current and voltage stresses, and switching speeds between the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0049] Among them, since the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are symmetrically distributed along the first axis 101, the metal sheet 6 is symmetrically distributed along the first axis 101, so that the current path lengths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are equal, which is conducive to achieving current sharing and further improving the performance of the bridge arm.

[0050] It should be noted that the parasitic inductance of the bridge arm is related to the length of the current path therein and the cross-sectional area of ​​the conductor. The longer the current path is, the greater the parasitic inductance of the bridge arm is. Conversely, the shorter the current path is, the smaller the parasitic inductance of the bridge arm is. At the same time, the larger the cross-street area of ​​the conductor is, the smaller the parasitic inductance of the bridge arm is. Conversely, the smaller the cross-sectional area of ​​the conductor is, the greater the parasitic inductance of the bridge arm is. Therefore, after the relative positions of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are determined, the length of the current path between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 is also determined. At the same time, since the cross-section of the metal sheet 6 is a long strip structure and the cross-section of the bonding wire is a circular structure, considering the overall volume of the bridge arm, the cross-sectional area of ​​the metal sheet 6 can be set larger. Therefore, the method of using the metal sheet 6 to realize the parallel connection of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can reduce the parasitic inductance of the bridge arm.

[0051] The metal sheet 6 is used for parallel connection between the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3. The specific type of the metal sheet 6 can be set according to actual needs and is not limited thereto. For example, the metal sheet 6 can be a copper sheet.

[0052] The first metal wire 4 can be arranged at the first end of the metal sheet 6 to realize a common emitter of the plurality of first semiconductor switches 2 , and the second metal wire 5 can be arranged at the second end of the metal sheet 6 to realize a common emitter of the plurality of second semiconductor switches 3 .

[0053] The substrate 1 is used to carry a plurality of first semiconductor switches 2 and a plurality of second semiconductor switches 3. The specific type of the substrate 1 can be set according to actual needs and is not limited thereto.

[0054] like Figure 1 and Figure 2 As shown, in some embodiments, the substrate 1 includes an insulating substrate 102, a first metal layer 103 and a second metal layer 104, the first metal layer 103 is arranged on the insulating substrate 102, and the first metal layer 103 is symmetrically arranged along the first axis 101, the metal sheet 6 is arranged on the first metal layer 103, the second metal layer 104 is arranged on the insulating substrate 102, and the second metal layer 104 is symmetrically arranged along the first axis 101, the first semiconductor switch 2 and the second semiconductor switch 3 are respectively arranged on the second metal layer 104, and the collector end of the first semiconductor switch 2 and the collector end of the first semiconductor switch 2 are respectively connected to the second metal layer 104.

[0055] It can be understood that, since the first end of the metal sheet 6 is respectively connected to the emitter ends of the multiple first semiconductor switches 2, the second end of the metal sheet 6 is respectively connected to the emitter ends of the multiple second semiconductor switches 3, and the metal sheet 6 is arranged on the first metal layer 103, the emitter ends of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can be connected to other devices using the first metal layer 103 after being connected in parallel. At the same time, since the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 are respectively connected to the second metal layer 104, the collector ends of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can be connected to other devices using the second metal layer 104 after being connected in parallel. As a result, the first metal layer 103 and the second metal layer 104 can be respectively used as the current output end and the current input end of the bridge arm to be connected to other devices, thereby facilitating the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0056] Among them, since the first metal layer 103 is symmetrically arranged along the first axis 101, and the second metal layer 104 is symmetrically arranged along the first axis 101, when the emitter ends of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are connected to other devices using the first metal layer 103, and the collector ends of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are connected to other devices using the second metal layer 104, the current path lengths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can be equal, thereby facilitating the realization of current sharing among the semiconductor switches, thereby further avoiding the difference in loss, the difference in current and voltage stress, and the difference in switching speed among the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0057] By setting the insulating substrate 102, the first metal layer 103 and the second metal layer 104 can be supported and insulated to protect the first metal layer 103 and the second metal layer 104, thereby preventing the bridge arm from being interfered by external devices and causing short circuit, open circuit and other problems, thereby ensuring the stable operation of the bridge arm.

[0058] It should be noted that since the metal sheet 6 is arranged on the first metal layer 103, the middle part of the metal sheet 6 is connected to the first metal layer 103, and the two ends of the metal sheet 6 are respectively connected to the first semiconductor switch 2 and the second semiconductor switch 3. At this time, the metal sheet 6 can include three planar sheets and two arc-shaped sheets, the two arc-shaped sheets are arranged at intervals between the three planar sheets, and the three planar sheets are respectively connected to the first semiconductor switch 2, the first metal layer 103 and the second semiconductor switch 3.

[0059] The specific type of the insulating substrate 102 can be set according to actual needs and is not limited thereto. A grounding layer can also be provided on the side of the insulating substrate 102 away from the first metal layer 103 and the second metal layer 104 .

[0060] The specific types of the first metal layer 103 and the second metal layer 104 can be set according to actual needs and are not limited thereto.

[0061] like Figure 1 As shown, in some embodiments, the second metal layer 104 includes a first part 1041 and a second part 1042, the first part 1041 is arranged on the insulating substrate 102, the first semiconductor switch 2 is arranged on the first part 1041, and the collector end of the first semiconductor switch 2 is connected to the first part 1041, the second part 1042 is arranged on the insulating substrate 102, the second semiconductor switch 3 is arranged on the second part 1042, and the collector end of the second semiconductor switch 3 is connected to the second part 1042, wherein the first part 1041 and the second part 1042 are symmetrically distributed along the first axis 101.

[0062] It can be understood that, since the collector end of the first semiconductor switch 2 is connected to the first part 1041, the collector ends of multiple first semiconductor switches 2 can be connected in parallel and connected to other devices using the first part 1041. At the same time, since the collector end of the second semiconductor switch 3 is connected to the second part 1042, the collector ends of multiple second semiconductor switches 3 can be connected in parallel and connected to other devices using the second part 1042. Therefore, the first part 1041 and the second part 1042 of the second metal layer 104 can simultaneously serve as the current input ends of the bridge arm to be connected to other devices, thereby facilitating the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0063] Among them, since the first part 1041 and the second part 1042 are symmetrically distributed along the first axis 101, when the collector ends of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are connected to other devices using the second metal layer 104, the current path lengths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can be equal, which facilitates the realization of current sharing among the semiconductor switches, thereby further avoiding the differences in losses, current and voltage stresses, and switching speeds among the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0064] The second metal layer 104 is arranged on the insulating substrate 102 separately by the first part 1041 and the second part 1042, which can leave space for the first metal layer 103, thereby facilitating the connection between the first metal layer 103 and the metal sheet 6. In this way, while ensuring the current sharing between each semiconductor switch, the structure of the bridge arm is more compact and reasonable, ensuring that the bridge arm has a smaller size to meet the use requirements.

[0065] It should be noted that the specific types of the first part 1041 and the second part 1042 can be set according to actual needs and are not limited thereto. For example, the first part 1041 and the second part 1042 can both be layered metals that are approximately rectangular.

[0066] When the bridge arm is used in a power module, the first part 1041 and the second part 1042 can be used for direct current input at the same time.

[0067] like Figure 1 As shown, in some embodiments, the first metal layer 103 includes a third part 1031 and a fourth part 1032, the third part 1031 is arranged on the insulating substrate 102, the third part 1031 is symmetrically arranged along the first axis 101, the third part 1031 is located between the first part 1041 and the second part 1042, the metal sheet 6 is arranged on the third part 1031, the fourth part 1032 is arranged on the insulating substrate 102, the fourth part 1032 is symmetrically arranged along the first axis 101, the fourth part 1032 is connected to the third part 1031, and the fourth part 1032 is located on one side of the second metal layer 104.

[0068] It can be understood that since the first end of the metal sheet 6 is respectively connected to the transmitting ends of multiple first semiconductor switches 2, the second end of the metal sheet 6 is respectively connected to the transmitting ends of multiple second semiconductor switches 3, and the metal sheet 6 is arranged on the third part 1031, and the fourth part 1032 is connected to the third part 1031, the transmitting ends of multiple first semiconductor switches 2 and multiple second semiconductor switches 3 can be connected to the fourth part 1032 using the third part 1031 after being connected in parallel, and can be connected to other devices using the fourth part 1032. As a result, the third part 1031 and the fourth part 1032 of the first metal layer 103 can be connected to other devices as the current output ends of the bridge arm, thereby facilitating the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0069] Among them, since the third part 1031 is symmetrically arranged along the first axis 101, and the fourth part 1032 is symmetrically arranged along the first axis 101, when the transmitting ends of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are connected to other devices using the first metal layer 103, the current path lengths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can be equal, which facilitates the realization of current sharing among the semiconductor switches, thereby further avoiding the difference in loss, the difference in current and voltage stress, and the difference in switching speed among the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0070] Since the third part 1031 is located between the first part 1041 and the second part 1042, and the fourth part 1032 is located on one side of the second metal layer 104, the structure of the bridge arm is more compact and reasonable while ensuring current sharing between the semiconductor switches, thereby ensuring that the bridge arm has a smaller size to meet usage requirements.

[0071] It should be noted that the specific types of the third part 1031 and the fourth part 1032 can be set according to actual needs and are not limited to this. For example, the third part 1031 and the fourth part 1032 can both be layered metals that are nearly rectangular, and the sizes of the third part 1031 and the fourth part 1032 are much smaller than the sizes of the first part 1041 and the second part 1042. At the same time, the length direction of the fourth part 1032 can be perpendicular to the axial direction of the first axis 101.

[0072] When the bridge arm is used in a power module, the fourth portion 1032 can be used for direct current output or alternating current output.

[0073] On the one hand, the current balance between the first semiconductor switch 2 and the second semiconductor switch 3 can be achieved through the symmetry between the first semiconductor switch 2 and the second semiconductor switch 3, the symmetry between the first metal wire 4 and the second metal wire 5, the symmetry of the metal sheet 6, the symmetry between the first part 1041 and the second part 1042, and the symmetry between the third part 1031 and the fourth part 1032, or can be achieved through other methods, which are not limited to this. On the other hand, the current balance between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can be achieved by adjusting the current path between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 to control the length of the current path. Among them, the adjustment method of the current path can be set according to actual needs, which is not limited to this.

[0074] like Figure 1As shown, in some embodiments, a notch 601 is provided on a side of the metal sheet 6 away from the fourth portion 1032 or on a side close to the fourth portion 1032 .

[0075] It can be understood that, since the transmitting ends of the plurality of first semiconductor switches 2 are simultaneously connected to the first end of the metal sheet 6, the transmitting ends of the plurality of second semiconductor switches 3 are simultaneously connected to the second end of the metal sheet 6, and the third portion 1031 is connected to the metal sheet 6, and the fourth portion 1032 is connected to the third portion 1031, when the fourth portion 1032 is used as the current output end of the bridge arm, the current path lengths between the third portion 1031 and the plurality of first semiconductor switches 2 are easily deviated and unequal, and the current path lengths between the third portion 1031 and the plurality of second semiconductor switches 3 are easily deviated and unequal, therefore, by setting the notch 601 , it is possible to adjust the shape, size and other parameters of the metal sheet 6, and then adjust the conduction path of the metal sheet 6, so that the current path length between the third part 1031 and the multiple first semiconductor switches 2 can be kept equal, and the current path length between the third part 1031 and the multiple second semiconductor switches 3 can be kept equal, thereby achieving current sharing among the semiconductor switches, thereby further avoiding the difference in loss, the difference in current and voltage stress, and the difference in switching speed among the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0076] It should be noted that the specific shape and size of the notch 601 can be set according to actual needs, and there is no limitation on this. For example, the notch 601 can be a rectangular structure, and the notch 601 is symmetrically arranged along the first axis 101.

[0077] like Figure 2 As shown, in some embodiments, the bridge arm also includes a first metal row 7 and a second metal row 8, the first metal row 7 is axially arranged along the first axis 101, and the first end of the first metal row 7 is connected to the first metal layer 103, and the second metal row 8 is axially arranged along the first axis 101, and the first end of the second metal row 8 is connected to the second metal layer 104.

[0078] It can be understood that, since the first end of the first metal row 7 is connected to the first metal layer 103, the transmitting ends of the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 can be connected to other devices by means of the first metal row 7 after being connected in parallel. At the same time, since the first end of the second metal row 8 is connected to the second metal layer 104, the collector ends of the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 can be connected to other devices by means of the second metal row 8 after being connected in parallel. Thus, the first metal row 7 and the second metal row 8 can be connected to other devices as the current output end and the current input end of the bridge arm, respectively, thereby facilitating the realization of the function of unidirectional conduction or bidirectional conduction of the bridge arm.

[0079] It should be noted that the specific types of the first metal bar 7 and the second metal bar 8 can be set according to actual needs, and there is no limitation on this. For example, the first metal bar 7 and the second metal bar 8 can both be copper bars.

[0080] like Figure 1 As shown, in some embodiments, the bridge arm includes three first semiconductor switches 2, three second semiconductor switches 3, three first metal wires 4 arranged at intervals, and three second metal wires 5 arranged at intervals, the three first semiconductor switches 2 are distributed axially at intervals along the first axis 101, and the three first semiconductor switches 2 are not aligned axially along the first axis 101, the three second semiconductor switches 3 are distributed axially at intervals along the first axis 101, and the three second semiconductor switches 3 are not aligned axially along the first axis 101, each first metal wire 4 and each second metal wire 5 includes a first end, a second end, and a third end distributed axially along the first axis 101, wherein the transmitting ends of the three first semiconductor switches 2 are respectively connected to the first end, the second end, and the third end of each first metal wire 4, and the transmitting ends of the three second semiconductor switches 3 are respectively connected to the first end, the second end, and the third end of each first metal wire 4.

[0081] It can be understood that, by setting the three first semiconductor switches 2 and the three second semiconductor switches 3, the bridge arm can carry a larger current by utilizing the parallel connection of the three first semiconductor switches 2 and the parallel connection of the three second semiconductor switches 3, thereby achieving high output power.

[0082] At the same time, since the emitters of the three first semiconductor switches 2 are simultaneously connected to each of the first metal wires 4, the three first semiconductor switches 2 realize a common emitter, and thus, when the three first semiconductor switches 2 are connected in parallel, the common emitter structure between the three first semiconductor switches 2 can be used to reduce the current path difference between the semiconductor switches, and since the emitters of the three second semiconductor switches 3 are simultaneously connected to each of the first metal wires 4, the three second semiconductor switches 3 realize a common emitter, and thus, when the three second semiconductor switches 3 are connected in parallel, the common emitter structure between the three second semiconductor switches 3 can be used to reduce the current path difference between the semiconductor switches. Therefore, it is easy to make the current path lengths between the semiconductor switches equal, and then realize current sharing, thereby avoiding the difference in loss, the difference in current and voltage stress, and the difference in switching speed between the semiconductor switches, and thus avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0083] It should be noted that, taking the first semiconductor switch 2 as an example, the transmitting ends of the three first semiconductor switches 2 are simultaneously connected to the first end of the metal sheet 6, so that when the metal sheet 6 is used as the current output end of the bridge arm, the current path lengths of the three first semiconductor switches 2 on the metal sheet 6 are prone to deviation and inequality. Therefore, by setting the three first semiconductor switches 2 to be axially uneven along the first axis 101, the relative positions of the three first semiconductor switches 2 on the metal sheet 6 can be adjusted, and then the conduction path on the metal sheet 6 can be adjusted, so that the current path lengths of the three first semiconductor switches 2 on the metal sheet 6 can be kept equal, thereby achieving current sharing among the semiconductor switches, thereby further avoiding the difference in loss, the difference in current and voltage stress, and the difference in switching speed among the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0084] The first metal wire 4 and the second metal wire 5 may both include a first arc-shaped conductor and a second arc-shaped conductor. Taking the first semiconductor switch 2 as an example, the first end of the first arc-shaped conductor is connected to the emitter of the first semiconductor switch 2 located on one side, the second end of the first arc-shaped conductor is connected to the emitter of the first semiconductor switch 2 located in the middle, the first end of the second arc-shaped conductor is connected to the emitter of the first semiconductor switch 2 located in the middle, and the second end of the second arc-shaped conductor is connected to the emitter of the first semiconductor switch 2 located on the other side.

[0085] The distances between the three first semiconductor switches 2 and the first axis 101 and the distances between the three second semiconductor switches 3 and the first axis 101 can be set according to actual needs, and there is no limitation on this.

[0086] like Figure 1 , Figure 2 and Figure 3 As shown, the embodiment of the present disclosure also proposes a half bridge, including an upper bridge arm 9 and a lower bridge arm 10, the upper bridge arm 9 is a bridge arm as in the embodiment of the present disclosure, and the lower bridge arm 10 is a bridge arm as in the embodiment of the present disclosure, wherein the emitter end of the first semiconductor switch 2 and the emitter end of the second semiconductor switch 3 of the upper bridge arm 9 are connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 10.

[0087] It can be understood that since the first metal wire 4 is respectively connected to the emitter ends of multiple first semiconductor switches 2, a common emitter is realized between the multiple first semiconductor switches 2, and since the second metal wire 5 is respectively connected to the emitter ends of multiple second semiconductor switches 3, a common emitter is realized between the multiple second semiconductor switches 3. Therefore, when the multiple first semiconductor switches 2 are connected in parallel, the common emitter structure between the multiple first semiconductor switches 2 and the common emitter structure between the multiple second semiconductor switches 3 can be used to reduce the current path difference between the semiconductor switches, so that it is easy to make the current path lengths between the semiconductor switches equal, and then achieve current sharing, thereby avoiding the difference in loss, current and voltage stress, and switching speed between the semiconductor switches, and thus avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0088] Since the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are symmetrically distributed along the first axis 101, and the second metal wire 5 and the first metal wire 4 are symmetrically distributed along the first axis 101, the current path lengths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are equal, which is conducive to current sharing and further improves the performance of the half bridge.

[0089] Since the emitter end of the first semiconductor switch 2 and the emitter end of the second semiconductor switch 3 of the upper bridge arm 9 are connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 10, the first semiconductor switch 2 and the second semiconductor switch 3 of the upper bridge arm 9 and the first semiconductor switch 2 and the second semiconductor switch 3 of the lower bridge arm 10 form a half-bridge circuit, and the half-bridge circuit can be used to achieve DC to AC inversion.

[0090] It should be noted that the specific arrangement between the upper bridge arm 9 and the lower bridge arm 10 can be arranged according to actual needs and is not limited thereto.

[0091] In some embodiments, the second metal row 8 of the upper bridge arm 9 and the first metal row 7 of the lower bridge arm 10 are arranged close to each other and in parallel, and the current direction of the second metal row 8 of the upper bridge arm 9 is opposite to the current direction of the first metal row 7 of the lower bridge arm 10 .

[0092] It can be understood that since the current direction of the second metal row 8 of the upper bridge arm 9 is opposite to the current direction of the first metal row 7 of the lower bridge arm 10, the second metal row 8 and the first metal row 7 can be mutually inductive, and then the mutual inductance is used to offset the parasitic inductance between the second metal row 8 and the first metal row 7, thereby effectively reducing the parasitic inductance of the half bridge and avoiding the generation of a large spike voltage. There is no need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the bridge arm can give full play to its advantage of high switching speed.

[0093] It should be noted that the distance between the second metal row 8 of the upper bridge arm 9 and the first metal row 7 of the lower bridge arm 10 can be set according to actual needs and is not limited thereto.

[0094] The first metal row 7 of the upper bridge arm 9 and the second metal row 8 of the lower bridge arm 10 can be set separately or can be the same metal row, without limitation. Among them, the first metal layer 103 of the upper bridge arm 9 and the second metal layer 104 of the lower bridge arm 10 share a metal row to reduce the material and volume of the half bridge.

[0095] The second metal row 8 of the upper bridge arm 9 can be used to connect the positive pole of direct current, the first metal row 7 of the lower bridge arm 10 can be used to connect the negative pole of direct current, and the first metal row 7 of the upper bridge arm 9 and the second metal row 8 of the lower bridge arm 10 can be used to output single-phase alternating current.

[0096] like Figure 1 As shown, in some embodiments, the notch 601 of the upper bridge arm 9 is located on the side of the metal sheet 6 of the upper bridge arm 9 close to the lower bridge arm 10, and the notch 601 of the lower bridge arm 10 is located on the side of the metal sheet 6 of the lower bridge arm 10 away from the upper bridge arm 9, and the size of the notch 601 of the upper bridge arm 9 is different from the size of the notch 601 of the lower bridge arm 10.

[0097] It can be understood that, by setting the notch 601 of the upper bridge arm 9, the shape, size and other parameters of the metal sheet 6 of the upper bridge arm 9 can be adjusted, and then the conduction path of the metal sheet 6 of the upper bridge arm 9 can be adjusted, so that the current path lengths of the multiple first semiconductor switches 2 of the upper bridge arm 9 on the metal sheet 6 can be kept equal, thereby achieving current sharing between the semiconductor switches in the upper bridge arm 9. At the same time, by setting the notch 601 of the lower bridge arm 10, the shape, size and other parameters of the metal sheet 6 of the lower bridge arm 10 can be adjusted, and then the conduction path of the metal sheet 6 of the lower bridge arm 10 can be adjusted, so that the current path lengths of the multiple first semiconductor switches 2 of the lower bridge arm 10 on the metal sheet 6 can be kept equal, thereby achieving current sharing between the semiconductor switches in the lower bridge arm 10, thereby further avoiding the difference in loss, the difference in current and voltage stress, and the difference in switching speed between the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0098] like Figure 1 As shown, in some embodiments, the insulating substrate 102 of the upper bridge arm 9 is connected to the insulating substrate 102 of the lower bridge arm 10 , and the first metal layer 103 of the upper bridge arm 9 is connected to the second metal layer 104 of the lower bridge arm 10 .

[0099] It can be understood that since the insulating substrate 102 of the upper bridge arm 9 is connected to the insulating substrate 102 of the lower bridge arm 10, and the first metal layer 103 of the upper bridge arm 9 is connected to the second metal layer 104 of the lower bridge arm 10, the upper bridge arm 9 and the lower bridge arm 10 can share an insulating substrate 102 and form an integral structure, and the first metal layer 103 of the upper bridge arm 9 and the second metal layer 104 of the lower bridge arm 10 can share a metal layer and form an integral structure, thereby not only realizing the connection between the metal sheet 6 of the upper bridge arm 9 and the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 10, but also ensuring the structural stability of the half bridge, while reducing the material and volume of the half bridge, making the cost of the half bridge lower and more convenient to use.

[0100] like Figure 3As shown, in some embodiments, the half bridge further includes a packaging insulating layer 11, a first opening 12, a second opening 13 and a third opening 14, the packaging insulating layer 11 is arranged on the insulating substrate 102 of the upper bridge arm 9 and the insulating substrate 102 of the lower bridge arm 10, and the first metal layer 103, the second metal layer 104, the first semiconductor switch 2, the second semiconductor switch 3 and the metal sheet 6 of the upper bridge arm 9 and the lower bridge arm 10 are all located in the packaging insulating layer 11, the first opening 12 is arranged in the packaging insulating layer 11 near the first metal layer 103 of the upper bridge arm 9, the first opening 12 is symmetrically arranged along the first axis 101, and the first metal layer 103 of the upper bridge arm 9 and the second metal layer 104 of the lower bridge arm 10 are all located in the packaging insulating layer 11. After passing through the first opening 12, the row 7 is connected to the first metal layer 103 of the upper bridge arm 9. The second opening 13 is arranged at the second metal layer 104 of the upper bridge arm 9 near the packaging insulation layer 11. The second opening 13 is symmetrically arranged along the first axis 101. The second metal row 8 of the upper bridge arm 9 is connected to the second metal layer 104 of the upper bridge arm 9 after passing through the second opening 13. The third opening 14 is arranged at the first metal layer 103 of the lower bridge arm 10 near the packaging insulation layer 11. The third opening 14 is symmetrically arranged along the first axis 101. The first metal row 7 of the lower bridge arm 10 is connected to the first metal layer 103 of the lower bridge arm 10 after passing through the third opening 14.

[0101] It can be understood that since the first metal layer 103, the second metal layer 104, the first semiconductor switch 2, the second semiconductor switch 3 and the metal sheet 6 are all located in the packaging insulating layer 11, the packaging insulating layer 11 can realize the packaging of the upper bridge arm 9 and the lower bridge arm 10, thereby preventing the half bridge from being disturbed by the external environment and improving the reliability of the half bridge. At the same time, the packaging insulating layer 11 can also insulate and protect the upper bridge arm 9 and the lower bridge arm 10, thereby avoiding the need to set additional insulating devices on the half bridge, thereby effectively reducing the cost of the half bridge and reducing the volume of the half bridge.

[0102] Among them, the arrangement of the first opening 12, the second opening 13 and the third opening 14 facilitates the arrangement of the first metal row 7 and the second metal row 8 on the upper bridge arm 9 and the lower bridge arm 10, so that the half bridge can be packaged and insulated while being connected to external devices using the first metal row 7 and the second metal row 8, making the use of the half bridge more convenient.

[0103] It should be noted that the sizes of the first opening 12 , the second opening 13 and the third opening 14 can be set according to actual needs and are not limited thereto.

[0104] The specific types of the first opening 12, the second opening 13 and the third opening 14 can be set according to actual needs, and there is no limitation on this. For example, the first opening 12, the second opening 13 and the third opening 14 each include two openings, so that two symmetrical connection points can be set between the first metal row 7 of the upper bridge arm 9 and the first metal layer 103 of the upper bridge arm 9, between the second metal of the upper bridge arm 9 and the second metal layer 104 of the upper bridge arm 9, and between the first metal row 7 of the lower bridge arm 10 and the first metal layer 103 of the lower bridge arm 10.

[0105] like Figure 1 and Figure 3 As shown, in some embodiments, a first hot melt area 15 is provided on the first metal layer 103 of the upper bridge arm 9 at the first opening 12, and the first hot melt area 15 is symmetrically arranged along the first axis 101. The first metal row 7 of the upper bridge arm 9 passes through the first opening 12 and is connected to the first hot melt area 15. A second hot melt area 16 is provided on the second metal layer 104 of the upper bridge arm 9 at the second opening 13, and the second hot melt area 16 is symmetrically arranged along the first axis 101. The second metal row 8 of the upper bridge arm 9 passes through the second opening 13 and is connected to the second hot melt area 16. A third hot melt area 17 is provided on the first metal layer 103 of the lower bridge arm 10 at the third opening 14, and the third hot melt area 17 is symmetrically arranged along the first axis 101. The first metal row 7 of the lower bridge arm 10 passes through the third opening 14 and is connected to the third hot melt area 17.

[0106] It can be understood that, by setting the first hot melt area 15, the first metal row 7 of the upper bridge arm 9 and the first metal layer 103 of the upper bridge arm 9 can be welded, by setting the second hot melt area 16, the second metal row 8 of the upper bridge arm 9 and the first metal layer 103 of the upper bridge arm 9 can be welded, and by setting the third hot melt area 17, the first metal row 7 of the lower bridge arm 10 and the first metal layer 103 of the lower bridge arm 10 can be welded, thereby avoiding the problem of excessive volume of the half bridge due to bolt connection, and at the same time ensuring the reliable operation of the half bridge.

[0107] The embodiment of the present disclosure further provides a power module, comprising a half bridge as described in the embodiment of the present disclosure.

[0108] It can be understood that since the first metal wire 4 is respectively connected to the emitter ends of multiple first semiconductor switches 2, a common emitter is realized between the multiple first semiconductor switches 2, and since the second metal wire 5 is respectively connected to the emitter ends of multiple second semiconductor switches 3, a common emitter is realized between the multiple second semiconductor switches 3. Therefore, when the multiple first semiconductor switches 2 are connected in parallel, the common emitter structure between the multiple first semiconductor switches 2 and the common emitter structure between the multiple second semiconductor switches 3 can be used to reduce the current path difference between the semiconductor switches, so that it is easy to make the current path lengths between the semiconductor switches equal, and then achieve current sharing, thereby avoiding the difference in loss, current and voltage stress, and switching speed between the semiconductor switches, and thus avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0109] Since the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are symmetrically distributed along the first axis 101, and the second metal wire 5 and the first metal wire 4 are symmetrically distributed along the first axis 101, the current path lengths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are equal, which is conducive to current sharing and further improves the performance of the power module.

[0110] Since the emitter end of the first semiconductor switch 2 and the emitter end of the second semiconductor switch 3 of the upper bridge arm 9 are connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 10, the first semiconductor switch 2 and the second semiconductor switch 3 of the upper bridge arm 9 and the first semiconductor switch 2 and the second semiconductor switch 3 of the lower bridge arm 10 form a half-bridge circuit, and the half-bridge circuit can realize the DC to AC inversion function of the power module.

[0111] It should be noted that the specific type of the power module can be set according to actual needs and is not limited to this. For example, the power module may include three half bridges, and the power output by the three half bridges constitutes a three-phase alternating current.

[0112] The embodiment of the present disclosure also provides a vehicle, comprising a power module according to the embodiment of the present disclosure.

[0113] It can be understood that since the first metal wire 4 is respectively connected to the emitter ends of multiple first semiconductor switches 2, a common emitter is realized between the multiple first semiconductor switches 2, and since the second metal wire 5 is respectively connected to the emitter ends of multiple second semiconductor switches 3, a common emitter is realized between the multiple second semiconductor switches 3. Therefore, when the multiple first semiconductor switches 2 are connected in parallel, the common emitter structure between the multiple first semiconductor switches 2 and the common emitter structure between the multiple second semiconductor switches 3 can be used to reduce the current path difference between the semiconductor switches, so that it is easy to make the current path lengths between the semiconductor switches equal, and then achieve current sharing, thereby avoiding the difference in loss, current and voltage stress, and switching speed between the semiconductor switches, and thus avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0114] Since the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are symmetrically distributed along the first axis 101, and the second metal wire 5 and the first metal wire 4 are symmetrically distributed along the first axis 101, the current path lengths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are equal, which is conducive to current sharing and further improves the performance of the power module.

[0115] Since the emitter end of the first semiconductor switch 2 and the emitter end of the second semiconductor switch 3 of the upper bridge arm 9 are connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 10, the first semiconductor switch 2 and the second semiconductor switch 3 of the upper bridge arm 9 and the first semiconductor switch 2 and the second semiconductor switch 3 of the lower bridge arm 10 form a half-bridge circuit, and the half-bridge circuit can realize the DC to AC inversion function of the power module.

[0116] It should be noted that the specific type of vehicle can be set according to actual needs and is not limited to this. For example, the vehicle can be an electric vehicle, a fuel vehicle, etc.

[0117] In this article, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A bridge arm, characterized in that: include: substrate; a plurality of first semiconductor switches, wherein the first semiconductor switches are disposed on the substrate; A plurality of second semiconductor switches, wherein the second semiconductor switches are arranged on the substrate, and the plurality of the first semiconductor switches and the plurality of the second semiconductor switches are symmetrically distributed along a first axis; first metal wires, the first metal wires are respectively connected to the emitter ends of the first semiconductor switches; The second metal wires are respectively connected to the emitter ends of the plurality of second semiconductor switches, and the second metal wires and the first metal wires are symmetrically distributed along the first axis.

2. The bridge arm according to claim 1, characterized in that: The bridge arm also includes: A metal sheet is symmetrically arranged along the first axis, and a first end of the metal sheet is respectively connected to the emission ends of the plurality of first semiconductor switches, and a second end of the metal sheet is respectively connected to the emission ends of the plurality of second semiconductor switches.

3. The bridge arm according to claim 2, characterized in that: The substrate comprises: Insulating substrate; A first metal layer, wherein the first metal layer is disposed on the insulating substrate and the first metal layer is symmetrically disposed along the first axis, and the metal sheet is disposed on the first metal layer; A second metal layer, wherein the second metal layer is arranged on the insulating substrate, and the second metal layer is symmetrically arranged along the first axis, the first semiconductor switch and the second semiconductor switch are respectively arranged on the second metal layer, and the collector end of the first semiconductor switch and the collector end of the first semiconductor switch are respectively connected to the second metal layer.

4. The bridge arm according to claim 3, characterized in that: The second metal layer comprises: a first part, wherein the first part is arranged on the insulating substrate, the first semiconductor switch is arranged on the first part, and a collector end of the first semiconductor switch is connected to the first part; a second part, wherein the second part is arranged on the insulating substrate, the second semiconductor switch is arranged on the second part, and a collector end of the second semiconductor switch is connected to the second part; Wherein, the first part and the second part are symmetrically distributed along the first axis.

5. The bridge arm according to claim 4, characterized in that: The first metal layer comprises: a third part, the third part is arranged on the insulating substrate, the third part is symmetrically arranged along the first axis, the third part is located between the first part and the second part, and the metal sheet is arranged on the third part; The fourth part is arranged on the insulating substrate, the fourth part is symmetrically arranged along the first axis, the fourth part is connected to the third part, and the fourth part is located on one side of the second metal layer.

6. The bridge arm according to claim 5, characterized in that: A notch is provided on a side of the metal sheet away from the fourth part or on a side close to the fourth part.

7. The bridge arm according to claim 3, characterized in that: The bridge arm also includes: A first metal row, the first metal row is arranged axially along the first axis, and a first end of the first metal row is connected to the first metal layer; A second metal row, wherein the second metal row is arranged axially along the first axis, and a first end of the second metal row is connected to the second metal layer.

8. The bridge arm according to any one of claims 1 to 7, characterized in that: The bridge arm comprises: three first semiconductor switches, the three first semiconductor switches are distributed at intervals along the axial direction of the first axis, and the three first semiconductor switches are not aligned along the axial direction of the first axis; three second semiconductor switches, the three second semiconductor switches are spaced apart along the axial direction of the first axis, and the three second semiconductor switches are not aligned along the axial direction of the first axis; Three first metal wires arranged at intervals and three second metal wires arranged at intervals, each of the first metal wires and each of the second metal wires comprising: a first end, a second end and a third end axially distributed along the first axis; Among them, the transmitting ends of the three first semiconductor switches are respectively connected to the first end, the second end and the third end of each first metal line, and the transmitting ends of the three second semiconductor switches are respectively connected to the first end, the second end and the third end of each first metal line.

9. A half bridge, characterized in that: include: An upper bridge arm, wherein the upper bridge arm is a bridge arm as claimed in any one of claims 1 to 8; A lower bridge arm, wherein the lower bridge arm is a bridge arm as claimed in any one of claims 1 to 8; The first semiconductor switch transmitting end and the second semiconductor switch transmitting end of the upper bridge arm are connected to the first semiconductor switch collector end and the second semiconductor switch collector end of the lower bridge arm.

10. The half bridge according to claim 9, characterized in that: The second metal row of the upper bridge arm and the first metal row of the lower bridge arm are arranged close to each other and in parallel, and the current direction of the second metal row of the upper bridge arm is opposite to the current direction of the first metal row of the lower bridge arm.

11. The half bridge according to claim 9, characterized in that The notch of the upper bridge arm is located on a side of the metal sheet of the upper bridge arm close to the lower bridge arm, and the notch of the lower bridge arm is located on a side of the metal sheet of the lower bridge arm away from the upper bridge arm, and the notch size of the upper bridge arm is different from that of the notch size of the lower bridge arm.

12. The half bridge according to claim 9, characterized in that The insulating substrate of the upper bridge arm is connected to the insulating substrate of the lower bridge arm, and the first metal layer of the upper bridge arm is connected to the second metal layer of the lower bridge arm.

13. The half bridge according to claim 12, characterized in that The half bridge further comprises: A packaging insulating layer, wherein the packaging insulating layer is arranged on the insulating substrate of the upper bridge arm and the insulating substrate of the lower bridge arm, and the first metal layer, the second metal layer, the first semiconductor switch, the second semiconductor switch and the metal sheet of the upper bridge arm and the lower bridge arm are all located in the packaging insulating layer; a first opening, wherein the first opening is arranged at the packaging insulation layer near the first metal layer of the upper bridge arm, the first opening is symmetrically arranged along the first axis, and the first metal row of the upper bridge arm is connected to the first metal layer of the upper bridge arm after passing through the first opening; a second opening, wherein the second opening is arranged at the second metal layer of the upper bridge arm near the packaging insulation layer, the second opening is symmetrically arranged along the first axis, and the second metal row of the upper bridge arm is connected to the second metal layer of the upper bridge arm after passing through the second opening; The third opening is arranged at the packaging insulation layer near the first metal layer of the lower bridge arm, the third opening is symmetrically arranged along the first axis, and the first metal row of the lower bridge arm is connected to the first metal layer of the lower bridge arm after passing through the third opening.

14. The half bridge according to claim 13, characterized in that A first hot-melt region is disposed on the first metal layer of the upper bridge arm at the first opening, the first hot-melt region is symmetrically disposed along the first axis, and the first metal row of the upper bridge arm is connected to the first hot-melt region after passing through the first opening; A second hot-melt region is disposed on the second metal layer of the upper bridge arm at the second opening, the second hot-melt region is symmetrically disposed along the first axis, and the second metal row of the upper bridge arm is connected to the second hot-melt region after passing through the second opening; A third hot-melt area is arranged on the first metal layer of the lower bridge arm at the third opening. The third hot-melt area is symmetrically arranged along the first axis. The first metal row of the lower bridge arm passes through the third opening and is connected to the third hot-melt area.

15. A power module, characterized in that: include: A half-bridge as claimed in any one of claims 9 to 14.

16. A vehicle, characterized in that: include: The power module as claimed in claim 15.

Images