Display device and manufacturing method thereof

Abstract

A display device comprises a circuit substrate, a first light-emitting diode, a second light-emitting diode, a repair light-emitting diode, a first protection structure and a second protection structure. The circuit substrate comprises a first pixel area and a second pixel area. The first pixel region includes a first placement region and a first maintenance region, and the second pixel region includes a second placement region and a second maintenance region. The first light emitting diode and the second light emitting diode are respectively arranged on the first pixel area and the second pixel area. The repair light-emitting diode is located on the first repair area. The first protection structure and the second protection structure are located on the first maintenance area and the second maintenance area respectively. The first protection structure contacts the repair light emitting diode.

Description

Technical Field

[0001] The present invention relates to a display device and a manufacturing method thereof. Background Art

[0002] A light emitting diode (LED) is a light emitting element with the characteristics of low power consumption, high brightness, high resolution and high color saturation, and is therefore suitable for constructing a pixel structure of a light emitting diode display panel.

[0003] The technology of transferring LEDs to a circuit substrate is called mass transfer. However, in the prior art, when transferring LEDs, problems such as transposition errors, transfer failures, or LED failures are prone to occur, causing some pixels in the display device to fail to operate normally, seriously affecting the display quality. Usually, the LEDs that have transposition errors, transfer failures, or failures are removed, and repair LEDs are transferred to the circuit substrate to replace the removed LEDs. Summary of the invention

[0004] The present invention provides a display device and a manufacturing method thereof, which can reduce the cost required for a repair process.

[0005] At least one embodiment of the present invention provides a display device, which includes a circuit substrate, a first light-emitting diode, a second light-emitting diode, a first insulating structure, a second insulating structure, a first top electrode, a second top electrode, a repair light-emitting diode, a first protective structure, and a second protective structure. The circuit substrate includes a first bottom electrode located in a first pixel region and a second bottom electrode located in a second pixel region. The first pixel region includes a first placement region and a first repair region, and the second pixel region includes a second placement region and a second repair region. The first light-emitting diode and the second light-emitting diode are located above the first pixel region and the second pixel region, respectively. The first insulating structure and the second insulating structure are located above the first placement region and the second placement region, respectively, and contact the first light-emitting diode and the second light-emitting diode, respectively. The first top electrode and the second top electrode are located on the first insulating structure and the second insulating structure, respectively. The second light-emitting diode is sandwiched between the second bottom electrode and the second top electrode. The repair light-emitting diode is located above the first repair region and is electrically connected to the first bottom electrode. The first protective structure and the second protective structure are located above the first repair region and the second repair region, respectively. The first protective structure contacts the repair light-emitting diode.

[0006] At least one embodiment of the present invention provides a method for manufacturing a display device, comprising the following steps. A circuit substrate is provided, comprising a first bottom electrode located in a first pixel region and a second bottom electrode located in a second pixel region, wherein the first pixel region comprises a first placement region and a first repair region, and the second pixel region comprises a second placement region and a second repair region. A first light-emitting diode and a second light-emitting diode are placed on the first pixel region and the second pixel region, respectively. A first insulating structure and a second insulating structure are formed, wherein the first insulating structure and the second insulating structure are respectively located on the first placement region and the second placement region, and contact the first light-emitting diode and the second light-emitting diode, respectively. A first top electrode and a second top electrode are formed, wherein the first top electrode and the second top electrode are respectively located on the first insulating structure and the second insulating structure, wherein the second light-emitting diode is sandwiched between the second bottom electrode and the second top electrode. A test process is performed, wherein the second light-emitting diode emits light in the test process, and the first light-emitting diode fails in the test process. A repair light-emitting diode is provided on the first repair region. A first protective structure and a second protective structure are formed, wherein the first protective structure and the second protective structure are respectively located on the first repair region and the second repair region, wherein the first protective structure contacts the repair light-emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1A is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0008] Figure 1B is a schematic top view of a display device according to an embodiment of the present invention.

[0009] Figures 2A to 2G yes Figure 1A and Figure 1B Schematic cross-sectional view of various stages of a method for manufacturing a display device.

[0010] Figure 3 is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0011] Figure 4 is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0012] Figure 5 is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0013] Fig. 6A is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0014] Figure 6B is a schematic top view of a display device according to an embodiment of the present invention.

[0015] FIG. 7A to FIG. 7D yes Fig. 6A and Figure 6B Schematic cross-sectional view of various stages of a method for manufacturing a display device.

[0016] Fig. 8A is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0017] Figure 8B is a schematic top view of a display device according to an embodiment of the present invention.

[0018] 9A to 9C yes Fig. 8A and Figure 8B Schematic cross-sectional view of various stages of a method for manufacturing a display device.

[0019] Fig.10 is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0020] Description of reference numerals:

[0021] 10,20,30,40,50,60,70: Display device

[0022] 100: Circuit board

[0023] 110: Insulation layer

[0024] 121: First bottom electrode

[0025] 122: Second bottom electrode

[0026] 122S: Sidewall

[0027] 131: First insulation structure

[0028] 131h,132h: Opening

[0029] 132: Second insulation structure

[0030] 141: First top electrode

[0031] 142: Second top electrode

[0032] 153,153A,153B: First protection structure

[0033] 153h,153h1: First through hole

[0034] 153h2,154h: Second through hole

[0035] 154,154A,154B: Second protection structure

[0036] 154h1: Third through hole

[0037] 154h2: Fourth through hole

[0038] 163,1631,1731: First connection structure

[0039] 164,1632,1732: Second connection structure

[0040] 1641,1741: The third connection structure

[0041] 1642,1742: Fourth connection structure

[0042] 170: Covering structure

[0043] 201: First conductive structure

[0044] 202: Second conductive structure

[0045] 203,246: The third conductive structure

[0046] 248: Fourth conductive structure

[0047] 210: First light emitting diode

[0048] 211,221,231,231A: First electrode

[0049] 212,222,232,232A: First semiconductor layer

[0050] 214,224,234,234A: Luminescent layer

[0051] 216,226,236,236A: Second semiconductor layer

[0052] 219,229,239,239A: Second electrode

[0053] 220: Second light emitting diode

[0054] 230,230A: Repairing LEDs

[0055] DR1: First placement area

[0056] DR2: Second placement area

[0057] HD1, HD2: horizontal distance

[0058] RR1: First pit area

[0059] RR2: Second pit area

[0060] SP1: First pixel area

[0061] SP2: Second pixel area

[0062] VD: Vertical Direction DETAILED DESCRIPTION

[0063] Figure 1A is a cross-sectional schematic diagram of a display device 10 according to an embodiment of the present invention. Figure 1B is a schematic top view of a display device 10 according to an embodiment of the present invention. Figure 1A Corresponding Figure 1B Please refer to the position of line a-a' and line b-b'. Figure 1A and Figure 1B The display device 10 includes a circuit substrate 100, a first light-emitting diode 210, a second light-emitting diode 220, a first insulating structure 131, a second insulating structure 132, a first top electrode 141, a second top electrode 142, a repair light-emitting diode 230, a first protective structure 153, a second protective structure 154, a first connecting structure 163, a second connecting structure 164 and a covering structure 170.

[0064] The circuit substrate 100 has a first pixel region SP1 and a second pixel region SP2. The first pixel region SP1 includes a first placement region DR1 and a first repair region RR1 adjacent to each other, and the second pixel region SP2 includes a second placement region DR2 and a second repair region RR2 adjacent to each other.

[0065] The circuit substrate 100 includes an insulating layer 110, a first bottom electrode 121, and a second bottom electrode 122. For example, the circuit substrate 100 includes a substrate (such as glass, organic material, or other suitable substrate) and a plurality of conductive layers and a plurality of insulating layers formed on the substrate, wherein the uppermost insulating layer is Figure 1A The circuit substrate 100 is a circuit board 100, and the uppermost conductive layer includes a first bottom electrode 121 and a second bottom electrode 122. The first bottom electrode 121 and the second bottom electrode 122 are located on the insulating layer 110, and are connected to other conductive structures located below the insulating layer 110 through through holes in the insulating layer 110. In some embodiments, the circuit substrate 100 further includes a plurality of thin film transistors, and the first bottom electrode 121 and the second bottom electrode 122 are electrically connected to different thin film transistors, respectively.

[0066] The first bottom electrode 121 and the second bottom electrode 122 are respectively located in the first pixel region SP1 and the second pixel region SP2. In this embodiment, the first bottom electrode 121 extends from the first placement region DR1 to the first repair region RR1, and the second bottom electrode 122 extends from the second placement region DR2 to the second repair region RR2.

[0067] The first light emitting diode 210 and the second light emitting diode 220 are respectively located on the first pixel region SP1 and the second pixel region SP2. In some embodiments, the first light emitting diode 210 and the second light emitting diode 220 are both vertical light emitting diodes. The first light emitting diode 210 includes a first electrode 211, a first semiconductor layer 212, a light emitting layer 214, a second semiconductor layer 216, and a second electrode 219. The light emitting layer 214 is located between the first semiconductor layer 212 and the second semiconductor layer 216. The first electrode 211 and the second electrode 219 contact the first semiconductor layer 212 and the second semiconductor layer 216, respectively. One of the first semiconductor layer 212 and the second semiconductor layer 216 is an N-type semiconductor, and the other is a P-type semiconductor. The second light emitting diode 220 includes a first electrode 221, a first semiconductor layer 222, a light emitting layer 224, a second semiconductor layer 226, and a second electrode 229. The light emitting layer 224 is located between the first semiconductor layer 222 and the second semiconductor layer 226. The first electrode 221 and the second electrode 229 respectively contact the first semiconductor layer 222 and the second semiconductor layer 226. One of the first semiconductor layer 222 and the second semiconductor layer 226 is an N-type semiconductor, and the other is a P-type semiconductor.

[0068] In some embodiments, the first electrode 211 of the first light-emitting diode 210 is connected to the first bottom electrode 121 through the first conductive structure 201, and the first electrode 221 of the second light-emitting diode 220 is connected to the second bottom electrode 122 through the second conductive structure 202. The first conductive structure 201 and the second conductive structure 202 include, for example, solder, conductive glue or other suitable conductive materials.

[0069] The first insulating structure 131 and the second insulating structure 132 are respectively located on the first placement region DR1 and the second placement region DR2, and respectively contact the first light-emitting diode 210 and the second light-emitting diode 220. In some embodiments, the first insulating structure 131 and the second insulating structure 132 respectively surround the first light-emitting diode 210 and the second light-emitting diode 220. The opening 131h of the first insulating structure 131 overlaps the second electrode 219 of the first light-emitting diode 210, and the opening 132h of the second insulating structure 132 overlaps the second electrode 229 of the second light-emitting diode 220.

[0070] The first top electrode 141 and the second top electrode 142 are respectively located on the first insulating structure 131 and the second insulating structure 132. In some embodiments, the first top electrode 141 is connected to the second electrode 219 of the first light-emitting diode 210 through the opening 131h of the first insulating structure 131, and the second top electrode 142 is connected to the second electrode 229 of the second light-emitting diode 220 through the opening 132h of the second insulating structure 132. The first top electrode 141 extends from the first insulating structure 131 to the first repair region RR1, and the second top electrode 142 extends from the second insulating structure 132 to the second repair region RR2. In some embodiments, the first top electrode 141 and the second top electrode 142 are electrically connected to each other, but the present invention is not limited thereto.

[0071] In some embodiments, the first top electrode 141 and the second top electrode 142 extend to the top surface of the insulating layer 110 along the sidewalls of the first insulating structure 131 and the sidewalls of the second insulating structure 132 , respectively.

[0072] In this embodiment, the first light emitting diode 210 is sandwiched between the first bottom electrode 121 and the first top electrode 141, but the present invention is not limited thereto. In other embodiments, the first light emitting diode 210 is offset during the transposition process, resulting in the first bottom electrode 121 and / or the first top electrode 141 not contacting the first light emitting diode 210. The second light emitting diode 220 is sandwiched between the second bottom electrode 202 and the second top electrode 142.

[0073] In this embodiment, the first LED 210 fails, so the repair LED 230 replaces the first LED 210 to emit light. The reasons for the failure of the first LED 210 may include defects of the first LED 210 itself, damage to the first conductive structure 201, and displacement of the first LED 210 during the transposition process.

[0074] The repair LED 230 is located on the first repair region RR1 and is electrically connected to the first bottom electrode 121. In some embodiments, the repair LED 230 is a vertical LED. The repair LED 230 includes a first electrode 231, a first semiconductor layer 232, a light emitting layer 234, a second semiconductor layer 236, and a second electrode 239. The light emitting layer 234 is located between the first semiconductor layer 232 and the second semiconductor layer 236. The first electrode 231 and the second electrode 239 contact the first semiconductor layer 232 and the second semiconductor layer 236, respectively. One of the first semiconductor layer 232 and the second semiconductor layer 236 is an N-type semiconductor, and the other is a P-type semiconductor. In some embodiments, the first semiconductor layers 212, 222, and 232 are semiconductors of the same doping type, and the second semiconductor layers 216, 226, and 236 are semiconductors of the same doping type.

[0075] In some embodiments, the first electrode 231 of the repaired LED 230 is connected to the first bottom electrode 121 through the third conductive structure 203. The third conductive structure 203 includes, for example, solder, conductive glue or other suitable conductive materials.

[0076] In this embodiment, part of the repair LED 230 overlaps the first bottom electrode 121 in the vertical direction VD, and another part of the repair LED 230 does not overlap the first bottom electrode 121 in the vertical direction VD. The vertical direction VD is, for example, a direction perpendicular to the top surface of the insulating layer 110.

[0077] The first protection structure 153 and the second protection structure 154 are respectively located on the first repair region RR1 and the second repair region RR2. The first protection structure 153 and the second protection structure 154 contact the first bottom electrode 121 and the second bottom electrode 122 respectively. The first protection structure 153 contacts the repair light emitting diode 230 and surrounds the repair light emitting diode 230 and the third conductive structure 203. The first through hole 153h of the first protection structure 153 overlaps the second electrode 239 of the repair light emitting diode 230. The second protection structure 154 has a second through hole 154h. In some embodiments, the first through hole 153h and the second through hole 154h partially overlap the first bottom electrode 121 and the second bottom electrode 122 in the vertical direction VD, respectively.

[0078] In some embodiments, a horizontal distance HD1 between the first protection structure 153 and the first insulation structure 131 is substantially equal to a horizontal distance HD2 between the second protection structure 154 and the second insulation structure 132 .

[0079] In some embodiments, the first protection structure 153 extends from the sidewall of the repaired LED 230 to between the bottom surface of the repaired LED 230 and the circuit substrate 100 .

[0080] The first connection structure 163 and the second connection structure 164 are respectively filled in the first through hole 153h of the first protection structure 153 and the second through hole 154h of the second protection structure 154. The first connection structure 163 is connected to the second electrode 139 of the repair light emitting diode 230.

[0081] The contact area between the first connection structure 163 and the repair LED 230 does not overlap the first bottom electrode 121 in the vertical direction VD. Therefore, even without the repair LED 230, the first connection structure 163 does not contact the first bottom electrode 121. The second connection structure 164 is separated from the second bottom electrode 122.

[0082] In some embodiments, the second connection structure 164 contacts the top surface of the insulating layer 110 through the second through hole 154 h.

[0083] The covering structure 170 covers the first pixel region SP1 and the second pixel region SP2, and contacts the first insulating structure 131, the second insulating structure 132, the first top electrode 141, the second top electrode 142, the first protective structure 153, the second protective structure 154, the first connection structure 163, and the second connection structure 164. In some embodiments, the covering structure 170 fills the opening 131h of the first insulating structure 131, the opening 132h of the second insulating structure 132, the first through hole 153h of the first protective structure 153, and the second through hole 154h of the second protective structure 154. In some embodiments, the covering structure 170 includes a color conversion layer. In some embodiments, the covering structure 170 also includes a packaging glue or other materials.

[0084] Figures 2A to 2G yes Figure 1A and Figure 1B Schematic cross-sectional view of various stages of the manufacturing method of the display device 10. Please refer to Figure 2A , a circuit substrate 100 is provided.

[0085] Please refer to Figure 2B , the first light emitting diode 210 and the second light emitting diode 220 are respectively placed on the first bottom electrode 121 of the first pixel region SP1 and the second bottom electrode 122 of the second pixel region SP2. In this embodiment, the first light emitting diode 210 and the second light emitting diode 220 are disposed on the circuit substrate 100 by a mass transfer process, wherein the first light emitting diode 210 and the second light emitting diode 220 are respectively located on the first placement region DR1 and the second placement region DR2.

[0086] Please refer to Figure 2C , forming a first insulating structure 131 and a second insulating structure 132 on the circuit substrate 100. For example, a photoresist material is first coated on the circuit substrate 100, and then the photoresist material is patterned by an exposure process and a development process to form the first insulating structure 131 and the second insulating structure 132. In other words, the first insulating structure 131 and the second insulating structure 132 include a cured photoresist material. In some embodiments, the shapes of the first insulating structure 131 and the second insulating structure 132 are defined by the same mask.

[0087] Please refer to Figure 2D , forming a first top electrode 141 and a second top electrode 142. The first top electrode 141 and the second top electrode 142 are respectively filled in the opening 131h of the first insulating structure 131 and the opening 132h of the second insulating structure 132.

[0088] Please refer to Figure 2E , a test process is performed to detect whether the first light emitting diode 210 and the second light emitting diode 220 can operate. In this embodiment, the second light emitting diode 220 emits light during the test process, while the first light emitting diode 210 fails during the test process.

[0089] After confirming that the first LED 210 is faulty, a repair LED 230 is provided on the first repair region RR1 . The repair LED 230 is bonded to the first bottom electrode 121 .

[0090] Please refer to Figure 2F , forming a first protective structure 153 and a second protective structure 154 on the circuit substrate 100. The first protective structure 153 and the second protective structure 154 are respectively located on the first maintenance area RR1 and the second maintenance area RR2. For example, a photoresist material is first coated on the circuit substrate 100, and then the aforementioned photoresist material is patterned through an exposure process and a development process to form the first protective structure 153 and the second protective structure 154. In other words, the first protective structure 153 and the second protective structure 154 include cured photoresist materials. In some embodiments, the shapes of the first protective structure 153 and the second protective structure 154 are defined by the same mask.

[0091] In the present embodiment, both pixels that are operating normally and pixels that are faulty include a protection structure. Therefore, the mask used to form the first protection structure 153 and the second protection structure 154 does not need to be modified in response to the location of the repaired light-emitting diode 230. For example, in the present embodiment, although the second light-emitting diode 220 above the second pixel region SP2 is not faulty, the second protection structure 154 will still be formed above the second pixel region SP2. In other embodiments in which the second light-emitting diode 220 is faulty, the second protection structure 154 can be formed on the repaired light-emitting diode located above the second repair region RR2 without adjusting the mask design, and the same light-emitting diode as above can be obtained on the second pixel region SP2. Figure 2F The first protection structure 153 in the repairing process and the structure of the light emitting diode 230 are repaired. Based on the above, the cost of redesigning the mask can be saved, thereby reducing the overall cost of the repair process.

[0092] Please refer to Figure 2G, forming a first connection structure 163 in the first through hole 153h of the first protection structure 153. Forming a second connection structure 164 in the second through hole 154h of the second protection structure 154. For example, a conductive material is first formed on the entire surface of the circuit substrate 100, and then a patterned photoresist layer is formed on the conductive material. Then, an etching process is performed using the patterned photoresist layer as a mask to pattern the conductive material, thereby forming the first connection structure 163 and the second connection structure 164. In other words, the first connection structure 163 and the second connection structure 164 can be formed at the same time.

[0093] In the present embodiment, both pixels operating normally and pixels with faults include a connection structure. Therefore, it is not necessary to modify the mask used to form the first connection structure 163 and the second connection structure 164 (the mask used to form the above-mentioned patterned photoresist layer) in response to the position of the repaired light-emitting diode 230. For example, in the present embodiment, although the second light-emitting diode 220 above the second pixel region SP2 is not faulty, the second connection structure 164 will still be formed above the second pixel region SP2. In other embodiments in which the second light-emitting diode 220 fails, there is no need to adjust the mask design to enable the second connection structure 164 to be connected to the repaired light-emitting diode located above the second repair region RR2 through the second through hole 154h in the second protective structure 154, and obtain the same as above on the second pixel region SP2. Figure 2G The first connection structure 163 in the repair structure of the light emitting diode 230. Based on the above, the cost required for redesigning the mask can be saved, thereby reducing the overall cost of the repair process.

[0094] In this embodiment, in order to avoid the short circuit between the connection structure and the bottom electrode, the portion of each connection structure (including the first connection structure 163 and the second connection structure 164) in the through hole (including the first through hole 153h and the second through hole 154h) does not overlap with the corresponding bottom electrode in the vertical direction VD. Therefore, the contact area between the first connection structure 163 and the repair light emitting diode 230 does not overlap with the first bottom electrode 121 in the vertical direction VD, and the second connection structure 164 is separated from the second bottom electrode 122. In other words, even if the first light emitting diode 210 is not faulty and the repair light emitting diode 230 is not disposed on the first pixel region SP1, the first connection structure 163 will not contact the first bottom electrode 121.

[0095] Finally back Figure 1A and Figure 1B , forming a covering structure 170 on the first pixel region SP1 and the second pixel region SP2.

[0096] Figure 3is a cross-sectional schematic diagram of a display device 20 according to an embodiment of the present invention. It must be noted here that Figure 3 The implementation examples are used Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0097] Figure 3 The display device 20 and Figure 1A The differences of the display device 10 include: Figure 3 In the display device 20 , at least a portion of the sidewall 122S of the second bottom electrode 122 close to the second connection structure 164 is covered by the second protection structure 154 , thereby reducing the probability of a short circuit between the second bottom electrode 122 and the second connection structure 164 .

[0098] Figure 4 is a cross-sectional schematic diagram of a display device 30 according to an embodiment of the present invention. It must be noted here that Figure 4 The implementation examples are used Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0099] Figure 4 The display device 30 and Figure 1A The differences of the display device 10 include: Figure 1A In the display device 10, the third conductive structure 203 is first formed on the repair light emitting diode 230, and then the repair light emitting diode 230 is transferred to the circuit substrate 100; Figure 4 In the display device 30 , the third conductive structure 246 and the fourth conductive structure 248 are first formed on the first bottom electrode 121 and the second bottom electrode 122 , respectively, and then the repaired light emitting diode 230 is transferred to the circuit substrate 100 .

[0100] Please refer to Figure 4 The third conductive structure 246 and the fourth conductive structure 286 include, for example, solder, conductive glue or other suitable conductive materials. The first protection structure 153 and the second protection structure 154 contact the third conductive structure 246 and the fourth conductive structure 248 respectively.

[0101] Figure 5 is a cross-sectional schematic diagram of a display device 40 according to an embodiment of the present invention. It must be noted here that Figure 5 The implementation examples are used Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0102] Figure 5 The display device 40 and Figure 1A The difference between the display device 10 and the display device 40 includes: the display device 40 further includes a first support structure 256 and a second support structure 258. The first support structure 256 and the second support structure 258 are respectively located on the first repair area RR1 and the second repair area RR2. The first support structure 256 is located between the repair light emitting diode 230 and the circuit substrate 100, and is used to support the repair light emitting diode 230. The first protection structure 153 and the second protection structure 154 contact the first support structure 256 and the second support structure 258 respectively. In some embodiments, the second connection structure 164 contacts the second support structure 258 through the second through hole 154h.

[0103] Fig. 6A is a cross-sectional schematic diagram of a display device 50 according to an embodiment of the present invention. Figure 6B is a schematic top view of a display device 50 according to an embodiment of the present invention. Fig. 6A Corresponding Figure 6B The position of line a-a' and line b-b'. It must be noted here that Fig. 6A and Figure 6B The implementation examples are used Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0104] Fig. 6A The display device 50 and Figure 1A The differences of the display device 10 include: in the display device 50, the repair LED 230A is a horizontal LED.

[0105] Please refer to Fig. 6A and Figure 6BThe repair light emitting diode 230A includes a first electrode 231A, a first semiconductor layer 232A, a light emitting layer 234A, a second semiconductor layer 236A, and a second electrode 239A. The light emitting layer 234A is located between the first semiconductor layer 232A and the second semiconductor layer 236A. The first electrode 231A and the second electrode 239A contact the first semiconductor layer 232A and the second semiconductor layer 236A, respectively. One of the first semiconductor layer 232A and the second semiconductor layer 236A is an N-type semiconductor, and the other is a P-type semiconductor. In some embodiments, the first semiconductor layers 212, 222, and 232A are semiconductors of the same doping type, and the second semiconductor layers 216, 226, and 236A are semiconductors of the same doping type.

[0106] The repair LED 230A is disposed on the first repair region RR1. In some embodiments, the repair LED 230A is bonded to the insulating layer 110 via an adhesive layer (not shown).

[0107] The first protection structure 153A and the second protection structure 154A are respectively located on the first repair region RR1 and the second repair region RR2. The first protection structure 153A contacts the repair LED 230A and surrounds the repair LED 230A. The first through hole 153h1 and the second through hole 153h2 of the first protection structure 153A overlap the first electrode 231A and the second electrode 239A of the repair LED 230A respectively.

[0108] The second protection structure 154A has a third through hole 154h1 and a fourth through hole 154h2.

[0109] In some embodiments, a horizontal distance HD1 between the first protection structure 153A and the first insulation structure 131 is substantially equal to a horizontal distance HD2 between the second protection structure 154A and the second insulation structure 132 .

[0110] The first connection structure 1631 and the second connection structure 1632 are respectively filled in the first through hole 153h1 and the second through hole 153h2 of the first protection structure 153A. The first connection structure 1631 connects the first electrode 231A of the repaired light-emitting diode 230A to the first bottom electrode 121. The first connection structure 1631 extends from the first electrode 231A along the first protection structure 153A to the first bottom electrode 121. The second connection structure 1632 connects the second electrode 239A of the repaired light-emitting diode 230A to the first top electrode 141. The second connection structure 1632 extends from the second electrode 239A along the first protection structure 153A to the first top electrode 141.

[0111] The third connection structure 1641 and the fourth connection structure 1642 are respectively filled in the third through hole 154h1 and the fourth through hole 154h2 of the second protection structure 154A. The third connection structure 1641 is connected to the second bottom electrode 122, and the fourth connection structure 1642 is connected to the second top electrode 142. The third connection structure 1641 is separated from the fourth connection structure 1642. In some embodiments, the third connection structure 1641 and the fourth connection structure 1642 contact the top surface of the insulating layer 110 through the third through hole 154h1 and the fourth through hole 154h2, respectively.

[0112] FIG. 7A to FIG. 7D yes Fig. 6A and Figure 6B Schematic cross-sectional view of various stages of the manufacturing method of the display device 50. Please refer to Fig. 7A , the first light emitting diode 210 and the second light emitting diode 220 are bonded to the circuit substrate 100. The first insulating structure 131 and the second insulating structure 132 are formed on the first light emitting diode 210 and the second light emitting diode 220 respectively. The first top electrode 141 and the second top electrode 142 are formed on the first insulating structure 131 and the second insulating structure 132 respectively. The method of forming the first insulating structure 131, the second insulating structure 132, the first top electrode 141 and the second top electrode 142 can refer to FIG. 2A to FIG. 2D And related instructions.

[0113] Please refer to Figure 7B , a test process is performed to detect whether the first light emitting diode 210 and the second light emitting diode 220 can operate. In this embodiment, the second light emitting diode 220 emits light during the test process, while the first light emitting diode 210 fails during the test process.

[0114] After confirming that the first LED 210 is faulty, a repair LED 230A is provided on the first repair region RR1 . The repair LED 230A is bonded to the insulating layer 110 by, for example, an adhesive layer (not shown).

[0115] Please refer to Figure 7C, forming a first protective structure 153A and a second protective structure 154A on the circuit substrate 100. The first protective structure 153A and the second protective structure 154A are respectively located on the first maintenance area RR1 and the second maintenance area RR2. For example, a photoresist material is first coated on the circuit substrate 100, and then the aforementioned photoresist material is patterned through an exposure process and a development process to form the first protective structure 153A and the second protective structure 154A. In other words, the first protective structure 153A and the second protective structure 154A include cured photoresist materials. In some embodiments, the shapes of the first protective structure 153A and the second protective structure 154A are defined by the same mask.

[0116] In the present embodiment, both pixels that are operating normally and pixels that are faulty include a protection structure. Therefore, it is not necessary to modify the mask used to form the first protection structure 153A and the second protection structure 154A in response to the position of the repaired light-emitting diode 230A. For example, in the present embodiment, although the second light-emitting diode 220 above the second pixel region SP2 is not faulty, the second protection structure 154A will still be formed above the second pixel region SP2. In other embodiments in which the second light-emitting diode 220 is faulty, the second protection structure 154A can be formed on the repaired light-emitting diode located above the second repair region RR2 without adjusting the mask design, and the same Figure 7C Based on the above, the cost of redesigning the mask can be saved, thereby reducing the overall cost of the repair process.

[0117] Please refer to Fig.7D , respectively forming a first connection structure 1631 and a second connection structure 1632 in the first through hole 153h1 and the second through hole 153h2 of the first protection structure 153A. Respectively forming a third connection structure 1641 and a fourth connection structure 1642 in the third through hole 154h1 and the fourth through hole 154h2 of the second protection structure 154A. For example, firstly forming a conductive material on the entire surface of the circuit substrate 100, and then forming a patterned photoresist layer on the conductive material. Then, performing an etching process with the patterned photoresist layer as a mask to pattern the conductive material, thereby forming the first connection structure 1631, the second connection structure 1632, the third connection structure 1641 and the fourth connection structure 1642. In other words, the first connection structure 1631, the second connection structure 1632, the third connection structure 1641 and the fourth connection structure 1642 can be formed at the same time.

[0118] In the present embodiment, both pixels that are operating normally and pixels that are faulty include connection structures. Therefore, it is not necessary to modify the mask used to form the first connection structure 1631, the second connection structure 1632, the third connection structure 1641, and the fourth connection structure 1642 (the mask used to form the above-mentioned patterned photoresist layer) in response to the position of the repaired light-emitting diode 230A. For example, in the present embodiment, although the second light-emitting diode 220 above the second pixel region SP2 is not faulty, the third connection structure 1641 and the fourth connection structure 1642 will still be formed above the second pixel region SP2. In other embodiments in which the second light-emitting diode 220 is faulty, the third connection structure 1641 and the fourth connection structure 1642 can be connected to the repaired light-emitting diode located above the second repair region RR2 through the third through hole 154h1 and the fourth through hole 154h2 in the second protective structure 154A without adjusting the mask design, and obtain the same Fig.7D The first connection structure 1631, the second connection structure 1632 and the structure for repairing the light emitting diode 230A. Based on the above, the cost of redesigning the mask can be saved, thereby reducing the overall cost of the repair process.

[0119] Finally back Fig. 6A and Figure 6B , forming a covering structure 170 on the first pixel region SP1 and the second pixel region SP2.

[0120] Fig. 8A is a cross-sectional schematic diagram of a display device 60 according to an embodiment of the present invention. Figure 8B is a schematic top view of a display device 60 according to an embodiment of the present invention. Fig. 8A Corresponding Figure 8B The position of line a-a' and line b-b'. It must be noted here that Fig. 8A and Figure 8B The implementation examples are used Fig. 6A and Figure 6B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0121] Fig. 8A The display device 60 and Fig. 6A The differences between the display device 50 and the display device 60 include: in the display device 60, the repair LED 230A is bonded to the circuit substrate 100 by a flip chip method.

[0122] Please refer to Fig. 8A and Figure 8B, the repair light emitting diode 230A is arranged on the first repair area RR1.

[0123] The first connection structure 1731 and the second connection structure 1732 are respectively located on the first bottom electrode 121 and the first top electrode 141. The first connection structure 1731 connects the first electrode 231A of the repaired light emitting diode 230A to the first bottom electrode 121, and the second connection structure 1732 connects the second electrode 239A of the repaired light emitting diode 230A to the first top electrode 141. In some embodiments, the first connection structure 1731 and the second connection structure 1732 are solder, conductive adhesive or other suitable materials. In this embodiment, the first connection structure 1731 and the second connection structure 1732 are separated from each other, but the present invention is not limited thereto. In other embodiments, the first connection structure 1731 and the second connection structure 1732 include anisotropic conductive adhesive, and the first connection structure 1731 is connected to the second connection structure 1732. In some embodiments, the first connection structure 1731 and the second connection structure 1732 are first formed on the repaired light emitting diode 230A, and then the repaired light emitting diode 230A is bonded to the circuit substrate 100, but the present invention is not limited thereto. In other embodiments, the first connection structure 1731 and the second connection structure 1732 are first formed on the circuit substrate 100 , and then the repaired LED 230A is bonded to the circuit substrate 100 .

[0124] The first protection structure 153B and the second protection structure 154B are respectively located on the first repair region RR1 and the second repair region RR2. The first protection structure 153B contacts the repair LED 230A, the first bottom electrode 121 and the first top electrode 141, and covers the repair LED 230A, the first connection structure 1731 and the second connection structure 1732. The first protection structure 153B helps to fix the repair LED 230A, and can be used to protect the first connection structure 1731 and the second connection structure 1732.

[0125] The second protection structure 154B contacts the second bottom electrode 122 and the second top electrode 142 .

[0126] In some embodiments, a horizontal distance HD1 between the first protection structure 153B and the first insulation structure 131 is substantially equal to a horizontal distance HD2 between the second protection structure 154B and the second insulation structure 132 .

[0127] 9A to 9C yes Fig. 8A and Figure 8B Schematic cross-sectional view of various stages of the manufacturing method of the display device 60. Please refer to Fig.9A, the first light emitting diode 210 and the second light emitting diode 220 are bonded to the circuit substrate 100. The first insulating structure 131 and the second insulating structure 132 are formed on the first light emitting diode 210 and the second light emitting diode 220 respectively. The first top electrode 141 and the second top electrode 142 are formed on the first insulating structure 131 and the second insulating structure 132 respectively. The method of forming the first insulating structure 131, the second insulating structure 132, the first top electrode 141 and the second top electrode 142 can refer to FIG. 2A to FIG. 2D And related instructions.

[0128] Please refer to Fig. 9B , a test process is performed to detect whether the first light emitting diode 210 and the second light emitting diode 220 can operate. In this embodiment, the second light emitting diode 220 emits light during the test process, while the first light emitting diode 210 fails during the test process.

[0129] After confirming that the first LED 210 is faulty, a repair LED 230A is provided on the first repair region RR1 . The repair LED 230A is bonded to the first bottom electrode 121 and the first top electrode 141 through the first connection structure 1731 and the second connection structure 1732 .

[0130] Please refer to Fig. 9C , forming a first protective structure 153B and a second protective structure 154B on the circuit substrate 100. The first protective structure 153B and the second protective structure 154B are respectively located on the first maintenance area RR1 and the second maintenance area RR2. For example, a photoresist material is first coated on the circuit substrate 100, and then the aforementioned photoresist material is patterned through an exposure process and a development process to form the first protective structure 153B and the second protective structure 154B. In other words, the first protective structure 153B and the second protective structure 154B include cured photoresist materials. In some embodiments, the shapes of the first protective structure 153B and the second protective structure 154B are defined by the same mask.

[0131] In the present embodiment, both pixels that are operating normally and pixels that are faulty include a protection structure. Therefore, it is not necessary to modify the mask used to form the first protection structure 153B and the second protection structure 154B in response to the location of the repaired light-emitting diode 230. For example, in the present embodiment, although the second light-emitting diode 220 above the second pixel region SP2 is not faulty, the second protection structure 154B will still be formed above the second pixel region SP2. In other embodiments in which the second light-emitting diode 220 is faulty, the second protection structure 154B can be formed on the repaired light-emitting diode located above the second repair region RR2 without adjusting the mask design, and the same Fig. 9C Based on the above, the cost of redesigning the mask can be saved, thereby reducing the overall cost of the repair process.

[0132] Finally back Fig. 8A and Figure 8B , forming a covering structure 170 on the first pixel region SP1 and the second pixel region SP2.

[0133] Fig.10 is a cross-sectional schematic diagram of a display device 70 according to an embodiment of the present invention. It must be noted here that Fig.10 The implementation examples are used Fig. 8A and Figure 8B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0134] Fig.10 The display device 70 and Fig. 8A The difference between the display device 60 and the display device 70 includes: in the display device 70, the third connection structure 1741 and the fourth connection structure 1742 are formed on the second repair region RR2.

[0135] Please refer to Fig.10 , the third connection structure 1741 and the fourth connection structure 1742 are respectively located on the second bottom electrode 122 and the second top electrode 142. For example, the first connection structure 1731, the second connection structure 1732, the third connection structure 1741 and the fourth connection structure 1742 are formed on the circuit substrate 100 using the same process. In this embodiment, the connection structure is formed on the repair area of ​​all pixels. Therefore, no matter which pixel has a light emitting diode failure later, the corresponding repair area will have a connection structure for connecting and repairing the light emitting diode, thereby saving the cost required for adjusting the process of forming the connection structure.

[0136] In this embodiment, the third connection structure 1741 and the fourth connection structure 1742 are separated from each other, but the present invention is not limited thereto. In other embodiments, the third connection structure 1741 and the fourth connection structure 1742 include anisotropic conductive adhesive, and the third connection structure 1741 and the fourth connection structure 1742 are connected.

[0137] The first protection structure 153B and the second protection structure 154B are respectively located on the first repair region RR1 and the second repair region RR2. The first protection structure 153B contacts the repair light emitting diode 230A, the first bottom electrode 121 and the first top electrode 141, and covers the repair light emitting diode 230A, the first connection structure 1731 and the second connection structure 1732. The first protection structure 153B helps to fix the repair light emitting diode 230A, and can be used to protect the first connection structure 1731 and the second connection structure 1732. The second protection structure 154B covers the third connection structure 1741 and the fourth connection structure 1742. The second protection structure 154B can be used to protect the third connection structure 1741 and the fourth connection structure 1742.

[0138] In summary, in the manufacturing process of the display device of the present invention, there is no need to modify the mask used to form the protection structure and / or the mask used to form the connection structure according to the location of the faulty LED, thereby significantly reducing the cost required for the repair process.

Claims

1. A display device, comprising: A circuit substrate, comprising a first bottom electrode located in a first pixel region and a second bottom electrode located in a second pixel region, wherein the first pixel region comprises a first placement region and a first maintenance region, and the second pixel region comprises a second placement region and a second maintenance region; A first light emitting diode and a second light emitting diode are respectively located on the first pixel region and the second pixel region; A first insulating structure and a second insulating structure are respectively located on the first placement area and the second placement area, and are respectively in contact with the first light emitting diode and the second light emitting diode; A first top electrode and a second top electrode, respectively located on the first insulating structure and the second insulating structure, wherein the second light-emitting diode is sandwiched between the second bottom electrode and the second top electrode; a repair light emitting diode, located on the first repair area and electrically connected to the first bottom electrode; as well as A first protection structure and a second protection structure are respectively located on the first repair area and the second repair area, wherein the first protection structure contacts the repair light emitting diode.

2. The display device as claimed in claim 1, wherein the repair LED is a vertical LED, the first bottom electrode extends from the first placement area to the first repair area, and the second bottom electrode extends from the second placement area to the second repair area, wherein the display device further comprises: a first connection structure filled into a first through hole of the first protection structure and connected to the repair light emitting diode, wherein a contact area between the first connection structure and the repair light emitting diode does not overlap with the first bottom electrode in a vertical direction; as well as A second connection structure is filled in a second through hole of the second protection structure, and the second connection structure is separated from the second bottom electrode. 3 . The display device as claimed in claim 1 , wherein a portion of the first protection structure extends from a side wall of the repair LED to between a bottom surface of the repair LED and the circuit substrate.

4. The display device according to claim 1, further comprising: A first supporting structure and a second supporting structure are respectively located on the first repair area and the second repair area, wherein the first supporting structure is located between the repair light emitting diode and the circuit substrate.

5. The display device as claimed in claim 1, wherein the repair LED is a horizontal LED, and the display device further comprises: A first connection structure and a second connection structure are respectively filled into a first through hole and a second through hole of the first protection structure, wherein the first connection structure connects the repair light emitting diode to the first bottom electrode, and the second connection structure connects the repair light emitting diode to the first top electrode; as well as A third connection structure and a fourth connection structure are respectively filled into a third through hole and a fourth through hole of the second protection structure, wherein the third connection structure is connected to the second bottom electrode, and the fourth connection structure is connected to the second top electrode.

6. The display device as claimed in claim 1, wherein the repair LED is a horizontal LED, and the display device further comprises: A first connection structure and a second connection structure are respectively located on the first bottom electrode and the first top electrode, and respectively connect the repair light emitting diode to the first bottom electrode and the first top electrode, and the first protection structure covers the first connection structure and the second connection structure.

7. The display device according to claim 6, further comprising A third connection structure and a fourth connection structure are respectively located on the second bottom electrode and the second top electrode, and the second protection structure covers the third connection structure and the fourth connection structure. 8 . The display device as claimed in claim 1 , wherein the first insulating structure and the second insulating structure surround the first LED and the second LED respectively, and the first protection structure surrounds the repair LED.

9. The display device according to claim 1, further comprising: A covering structure covers the first pixel region and the second pixel region and contacts the first protection structure and the second protection structure.

10. The display device of claim 9, wherein the covering structure comprises a color conversion layer. 11 . The display device as claimed in claim 1 , wherein a portion of the repair LED overlaps the first bottom electrode in a vertical direction, and another portion of the repair LED does not overlap the first bottom electrode in the vertical direction. 12 . The display device as claimed in claim 1 , wherein a horizontal distance between the first protection structure and the first insulating structure is substantially equal to a horizontal distance between the second protection structure and the second insulating structure.

13. A method for manufacturing a display device, comprising: A circuit substrate is provided, the circuit substrate comprising a first bottom electrode located in a first pixel region and a second bottom electrode located in a second pixel region, wherein the first pixel region comprises a first placement region and a first maintenance region, and the second pixel region comprises a second placement region and a second maintenance region; Placing a first light emitting diode and a second light emitting diode on the first pixel region and the second pixel region respectively; forming a first insulating structure and a second insulating structure, wherein the first insulating structure and the second insulating structure are respectively located on the first placement area and the second placement area, and respectively contact the first light-emitting diode and the second light-emitting diode; forming a first top electrode and a second top electrode, the first top electrode and the second top electrode being respectively located on the first insulating structure and the second insulating structure, wherein the second light emitting diode is sandwiched between the second bottom electrode and the second top electrode; performing a test process, wherein the second light emitting diode emits light during the test process and the first light emitting diode fails during the test process; Providing a repair light emitting diode on the first repair area; as well as A first protection structure and a second protection structure are formed. The first protection structure and the second protection structure are respectively located on the first repair area and the second repair area, wherein the first protection structure contacts the repair light emitting diode.

14. The manufacturing method according to claim 13, further comprising: forming a first connection structure in a first through hole of the first protection structure and connected to the repair light emitting diode, wherein a contact area between the first connection structure and the repair light emitting diode does not overlap the first bottom electrode in a vertical direction; as well as A second connection structure is formed in a second through hole of the second protection structure, and the second connection structure is separated from the second bottom electrode.

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