Substrate structure and light-emitting assembly

Abstract

The invention provides a substrate structure. The substrate structure comprises a substrate; the electrical connection layer comprises an insulating layer and a circuit layer; a process groove is formed in the electrical connection layer; the groove wall of the process groove is provided with a first groove wall section located in the insulating layer, and the first groove wall section defines a first area on the extending face of the side, close to the substrate, of the insulating layer and passes through the center of the first area and is perpendicular to the section of the first area. The first groove wall section comprises a first end located on the extension surface of one side of the insulating layer away from the substrate and a second end located on the extension surface of one side of the insulating layer close to the substrate; an included angle A between a connecting line of the first end and the second end and a connecting line between the second end and the center of the first area is 0 degree lt; a is less than or equal to 100 degrees. According to the substrate structure provided by the invention, the included angle A meets the following conditions: 0 degree lt; a is smaller than or equal to 100 degrees, so that the connecting part can abut against the first groove wall section in the attaching and filling process, and therefore gaps are prevented from being generated to isolate the circuit layer at the bottom.

Description

Technical Field

[0001] The present invention relates to the field of display devices, and in particular to a substrate structure and a display device. Background Art

[0002] COB (Chip On Board) is a chip-on-board package that is used to bond LED chips to PCB (printed circuit board). COG (Chip on Glass) refers to bonding LED (light-emitting diode) chips directly to a glass substrate, using TFT (thin-film transistor) drive to achieve Micro LED (micro light-emitting diode display) or Mini LED (sub-millimeter light-emitting diode) display. It can be seen that COG technology uses a glass substrate to replace the printed circuit board PCB. Compared with COB technology, COG has a simpler process, a smaller size, and is easier to miniaturize, simplify, and highly integrate.

[0003] The existing COG products have a circuit layer made of copper on a glass substrate, and an insulating layer made of silicon nitride on the circuit layer. Before the welding process, a welding groove is etched in the insulating layer at the welding position, and the welding groove gradually expands from the bottom of the groove to the groove mouth, exposing the copper below to form a copper pad. In the subsequent process, nickel starts to grow from the copper pad. As the nickel layer thickens, it will naturally extend to the groove walls on both sides of the welding groove, thereby covering the entire copper pad, thereby preventing the pad from oxidation.

[0004] However, due to the poor bonding between nickel and silicon nitride, and the gradual expansion of the welding groove from bottom to top, the nickel layer is too far away from the groove wall during the growth process, so that the nickel layer cannot adhere to the insulating layer, resulting in a gap between the nickel layer and the silicon nitride layer. During the process of chemical gold plating on the nickel layer, corrosive ions can easily pass through the gap and reach the circuit layer directly, corroding the circuit layer, resulting in poor functionality and a decrease in the yield rate. Summary of the invention

[0005] The present invention aims to at least solve the problem in the prior art that a gap is formed between the nickel layer and the silicon nitride layer, and the circuit layer is easily corroded during chemical gold plating of the nickel layer and its subsequent storage process, resulting in poor functionality and a decrease in the yield rate.

[0006] To achieve the purpose of the present invention, a substrate structure is provided, comprising: a substrate; an electrical connection layer, the electrical connection layer comprising an insulating layer and a circuit layer arranged in contact with each other, the circuit layer being arranged on the substrate, and the insulating layer being arranged on the circuit layer; a process groove is arranged on the electrical connection layer, the groove opening of the process groove is flush with the extension surface of the insulating layer away from the substrate, and the groove bottom of the process groove is arranged on the circuit layer; the groove wall of the process groove has a first groove wall section located in the insulating layer, the first groove wall section encloses a first area on the extension surface of the insulating layer close to the substrate, and in a cross section passing through the center of the first area and perpendicular to the first area, the first groove wall section comprises a first end located on the extension surface of the insulating layer away from the substrate and a second end located on the extension surface of the insulating layer close to the substrate; an angle A between a line connecting the first end and the second end and a line connecting the second end and the center of the first area satisfies: 0° <A≤100°。

[0007] Furthermore, the groove bottom is located on the surface of the circuit layer close to the insulating layer.

[0008] Furthermore, the bottom of the groove is located inside the circuit layer; the process groove includes a through hole penetrating the insulating layer and a sub-groove portion located in the circuit layer, and the hole wall of the through hole is the first groove wall segment; the orthographic projection of the minimum cross-section of the through hole in the direction perpendicular to the thickness of the circuit layer on the substrate is located inside the orthographic projection of the maximum cross-section of the sub-groove portion in the direction perpendicular to the thickness of the circuit layer on the substrate.

[0009] Furthermore, an orthographic projection of the first region on the substrate is located inside an orthographic projection of an opening of the sub-groove portion close to the insulating layer on the substrate.

[0010] Furthermore, the groove wall of the process groove includes a second groove wall section, and the second groove wall section is located on the surface of the insulating layer close to the substrate; the second groove wall section is arranged around the first area and forms a ring belt connected end to end.

[0011] Furthermore, the orthographic projection of the opening of the sub-groove portion on the substrate is located inside the orthographic projection of the groove bottom of the sub-groove portion on the substrate.

[0012] Further, the first groove wall section includes a stepped structure, or the first groove wall section includes an auxiliary groove structure.

[0013] Furthermore, a buffer groove is provided on an extension surface of the insulating layer away from the substrate;

[0014] The buffer tank is arranged around the process tank to form an annular belt connected end to end.

[0015] Furthermore, it also includes: an isolation ring, which is exposed to the process groove in the first groove wall section, and the isolation ring is arranged around the process groove to form a ring belt connected end to end; wherein the material of the isolation ring is the same as the material of the circuit layer.

[0016] Furthermore, the substrate structure also includes: a connecting part, which fills the process groove and is arranged in contact with the circuit layer, and the connecting part includes a first metal layer and a second metal layer, and the first metal layer is closer to the substrate than the second metal layer; wherein the material of the first metal layer includes nickel, and the material of the second metal layer includes gold.

[0017] Furthermore, the material of the circuit layer includes any one or more of copper, gold, silver, nickel, and aluminum.

[0018] Furthermore, an orthographic projection of the connecting portion on the substrate surrounds an orthographic projection of the process groove on the substrate.

[0019] According to a second aspect of the present invention, a light-emitting component is also disclosed, comprising an LED light-emitting chip and a substrate structure according to the above-mentioned substrate structure, wherein the LED light-emitting chip is electrically connected to the substrate structure via the connecting portion; wherein the light-emitting component is one of a display panel and a backlight panel.

[0020] According to a third aspect of the present invention, a substrate structure is also disclosed, comprising: a substrate; an electrical connection layer, the electrical connection layer comprising an insulating layer and a circuit layer arranged in contact with each other, the circuit layer being arranged on the substrate, and the insulating layer being arranged on the circuit layer; a process groove is arranged on the electrical connection layer, the groove opening of the process groove is flush with an extension surface of the insulating layer away from the substrate, and the groove bottom of the process groove is arranged on the circuit layer; the groove wall of the process groove has a first groove wall section located in the insulating layer, the first groove wall section encloses a first area on an extension surface of the insulating layer close to the substrate, and the first area is formed by the process groove. In a cross section at the center of the first area and perpendicular to the first area, the first groove wall section includes a first end located on an extension surface of the insulating layer away from the substrate and a second end located on an extension surface of the insulating layer close to the substrate; the groove bottom is located inside the circuit layer; the process groove includes a through hole penetrating the insulating layer and a sub-groove portion located on the circuit layer, and the hole wall of the through hole is the first groove wall section; the orthographic projection of the minimum cross section of the through hole in a direction perpendicular to the thickness of the circuit layer on the substrate is located inside the orthographic projection of the maximum cross section of the sub-groove portion in a direction perpendicular to the thickness of the circuit layer on the substrate.

[0021] Further, the orthographic projection of the first region on the substrate is located inside the orthographic projection of the opening on the side of the sub-groove portion close to the insulating layer on the substrate; the groove wall of the process groove includes a second groove wall section, and the second groove wall section is located on the surface of the insulating layer close to the substrate side; the second groove wall section surrounds the first region and forms an annular belt that is joined end to end.

[0022] Further, the substrate structure further includes: a connecting portion, the connecting portion fills the process groove and is in contact with the circuit layer, the connecting portion includes a first metal layer and a second metal layer, and the first metal layer is closer to the substrate than the second metal layer; wherein, the material of the first metal layer includes nickel, and the material of the second metal layer includes gold; the material of the circuit layer includes any one or more of copper, gold, silver, nickel, and aluminum.

[0023] According to the fourth aspect of the present invention, a light-emitting component is also disclosed, including an LED light-emitting chip and the substrate structure according to the above, and the LED light-emitting chip is electrically connected to the substrate structure through the connecting portion; wherein, the light-emitting component is one of a display panel or a backlight board.

[0024] By making the angle of the included angle A satisfy: 0° < A ≤ 100°, the substrate structure of the present invention changes the angle of the first groove wall section in the process groove, so that during the attachment and filling process of the connecting portion, it can abut against the first groove wall section, thereby avoiding the generation of gaps and isolating the bottom circuit layer, and effectively avoiding the corrosion of the circuit layer during the chemical gold plating process of the nickel layer, and improving the yield rate. Description of the Drawings

[0025] Figure 1 It is a schematic structural diagram of the substrate structure of Embodiment 1 of the present invention;

[0026] Figure 2 It is an exploded view of the substrate structure of Embodiment 1 of the present invention;

[0027] Figure 3 It is a schematic structural diagram of the substrate structure of Embodiment 2 of the present invention;

[0028] Figure 4 It is an exploded view of the substrate structure of Embodiment 2 of the present invention;

[0029] Figure 5 It is a schematic structural diagram of the substrate structure of Embodiment 3 of the present invention;

[0030] Figure 6 It is a schematic structural diagram of the substrate structure of Embodiment 4 of the present invention;

[0031] Figure 7 It is a schematic structural diagram of the substrate structure of Embodiment 5 of the present invention;

[0032] Figure 8 It is a structural schematic diagram of a process tank of a substrate structure according to a fifth embodiment of the present invention;

[0033] Fig. 9 is a structural schematic diagram of a substrate structure according to a sixth embodiment of the present invention;

[0034] Fig.10 An exploded view of a substrate structure according to a sixth embodiment of the present invention;

[0035] Fig.11 is a structural schematic diagram of a substrate structure according to a seventh embodiment of the present invention;

[0036] Fig.12 An exploded view of a substrate structure according to a seventh embodiment of the present invention;

[0037] Fig.13 is a structural schematic diagram of a substrate structure according to an eighth embodiment of the present invention;

[0038] Fig.14 An exploded view of a substrate structure according to an eighth embodiment of the present invention;

[0039] Fig.15 is a structural schematic diagram of a substrate structure according to a ninth embodiment of the present invention;

[0040] Fig.16 An exploded view of a substrate structure according to a ninth embodiment of the present invention;

[0041] List of reference numerals:

[0042] 10. Substrate; 20. Electrical connection layer; 21. Insulation layer; 22. Circuit layer; 30. Process groove; 31. Through hole; 311. First groove wall section; 312. Second groove wall section; 32. Sub-groove portion; 40. Step structure; 50. Buffer groove; 60. Isolation ring; 70. Connecting portion; 71. First metal layer; 72. Second metal layer. DETAILED DESCRIPTION

[0043] In order to enable those skilled in the art to better understand the technical solution of the present invention, the substrate structure and the light-emitting component provided by the present invention are described in detail below with reference to the accompanying drawings.

[0044] In order to solve the above technical problems, according to the first aspect of the present invention, a substrate structure is disclosed, comprising: a base 10, an electrical connection layer 20 and a connection portion 70. The electrical connection layer 20 comprises an insulating layer 21 and a circuit layer 22 arranged in contact with each other, the circuit layer 22 is arranged on the base 10, and the insulating layer 21 is arranged on the circuit layer 22.

[0045] A process groove 30 is provided on the electrical connection layer 20. The notch of the process groove 30 is flush with the extension surface of the insulating layer 21 on the side away from the substrate 10, and the bottom of the groove is located on the surface of the circuit layer 22 close to the insulating layer 21. The connecting portion 70 includes a first metal layer 71 and a second metal layer 72. The connecting portion 70 is filled in the process groove 30, and the first metal layer 71 is closer to the substrate 10 than the second metal layer 72.

[0046] The groove wall of the process groove 30 has a first groove wall section 311 located in the insulating layer 21. The first groove wall section 311 encloses a first region on the extension surface of the insulating layer 21 on the side close to the substrate 10. In a cross-section passing through the center of the first region and perpendicular to the first region, the first groove wall section 311 includes a first end located on the extension surface of the insulating layer 21 on the side away from the substrate 10 and a second end located on the extension surface of the insulating layer 21 on the side close to the substrate 10; the included angle A between the line connecting the first end and the second end and the line connecting the second end and the center of the first region satisfies: 0° < A ≤ 100°.

[0047] Before welding, the connecting portion 70 needs to be filled into the process groove 30 and overflow, so that the connecting portion 70 contacts the circuit layer 22. During the filling process, the connecting portion 70 expands gradually from the bottom of the process groove 30 to the notch and the surrounding groove walls of the process groove 30. Since the included angle A satisfies: 0° < A ≤ 100°, during the expansion process, the connecting portion 70 can abut against the first groove wall section 311, thereby avoiding the generation of gaps and isolating the bottom circuit layer 22.

[0048] By changing the angle of the groove wall section in the process groove 30, the substrate structure of the present invention enables the connecting portion 70 to abut against the first groove wall section 311 during the attachment and filling process, thereby avoiding the generation of gaps and isolating the bottom circuit layer 22, effectively preventing the circuit layer 22 from being corroded during the electroless nickel plating process and improving the yield.

[0049] The following specifically describes the substrate structure of the present invention in conjunction with specific embodiments:

[0050] As Figure 1 and Figure 2 shown in Embodiment 1 of the present invention, a substrate structure is disclosed, including: a substrate 10, an electrical connection layer 20, and a connecting portion 70. Among them, the electrical connection layer 20 includes an insulating layer 21 and a circuit layer 22 that are in contact with each other. The circuit layer 22 is provided on the substrate 10, and the insulating layer 21 is provided on the circuit layer 22.

[0051] A process groove 30 is provided on the electrical connection layer 20. The connecting portion 70 is used to fill the process groove 30. The notch of the process groove 30 is flush with the extension surface of the insulating layer 21 on the side away from the substrate 10. The bottom of the process groove 30 is provided on the circuit layer 22, and the bottom of the groove is located on the surface of the circuit layer 22 close to the insulating layer 21.

[0052] The groove wall of the process groove 30 has a first groove wall section 311 located in the insulating layer 21. The first groove wall section 311 encloses a first area on the extension surface of the insulating layer 21 close to the substrate 10. In a cross section passing through the center of the first area and perpendicular to the first area, the first groove wall section 311 includes a first end located on the extension surface of the insulating layer 21 away from the substrate 10 and a second end located on the extension surface of the insulating layer 21 close to the substrate 10. The angle A between the first end and the second end and the line between the second end and the center of the first area is 60°.

[0053] In other words, in Figure 2 As shown, in this embodiment, a through hole 31 is provided on the insulating layer 21. Figure 2 The vertical direction of the through hole 31 penetrates the insulating layer 21. Figure 2 The upper surface of the middle circuit layer 22 forms a process groove 30, and the inner wall surface of the through hole 31 forms a first groove wall section 311. Figure 2 As can be seen from the figure, the angle A between the line connecting the first end and the second end of the first groove wall segment 311 and the line connecting the second end and the center of the first region is 60°, which is equivalent to Figure 1 The angle between the inner wall of the middle process groove 30 and the upper surface of the circuit layer 22 is 60°

[0054] In this embodiment, the substrate 10 is made of glass, the circuit layer 22 is a copper layer, the insulating layer 21 is a silicon nitride layer, the connecting part 70 includes a first metal layer 71 and a second metal layer 72, the first metal layer 71 is closer to the substrate 10 than the second metal layer 72, the first connecting part 70 is a nickel layer, and the second connecting part 70 is a gold layer.

[0055] In this embodiment, by changing the edge of the silicon nitride layer (i.e., the first groove wall section 311 of the process groove 30) from the original outward slope to an inward slope, during the attachment and filling process of the nickel layer, it will encounter the silicon nitride wall at the upper edge and will continue to expand upward, eventually fitting tightly with the inward inclined wall of the silicon nitride. After the nickel layer exceeds the height of the silicon nitride (overflows the process groove 30), it will continue to extend and eventually wrap up the silicon nitride, thereby avoiding the formation of gaps. Since the corrosion resistance of nickel is significantly better than that of copper, the occurrence of copper layer corrosion can be effectively avoided, thereby achieving a good protective effect.

[0056] It should be noted that, in this embodiment, the angle A is 60 degrees, but this is not restrictive. Figure 3 and Figure 4 In the second embodiment shown, the angle A is 90 degrees, and the effect is the same as that of the first embodiment. Figure 3The vertical inner wall in the nickel layer will also hit the silicon nitride wall at the upper edge during the nickel layer attachment and filling process, and will continue to expand upward, and finally fit tightly with the inwardly inclined wall of the silicon nitride, and after the nickel layer exceeds the silicon nitride height (overflowing the process groove 30), it will continue to extend, and finally wrap up the silicon nitride, thereby avoiding the generation of gaps, which can effectively avoid the occurrence of copper layer corrosion and play a good protective effect. In addition, when the angle A is greater than 90°, it is also possible, as long as the angle A does not exceed 100°, during the nickel layer attachment and filling process, it will hit the silicon nitride wall at the edge, and will continue to expand upward, and finally fit tightly with the inwardly inclined wall of the silicon nitride.

[0057] like Figure 5 The third embodiment shown also discloses a substrate structure, including: a base 10, an electrical connection layer 20 and a connection portion 70. The electrical connection layer 20 includes an insulating layer 21 and a circuit layer 22 arranged in contact with each other, the circuit layer 22 is arranged on the base 10, and the insulating layer 21 is arranged on the circuit layer 22.

[0058] A process groove 30 is provided on the electrical connection layer 20, and the connecting part 70 is used to fill the process groove 30. The groove opening of the process groove 30 is flush with the extension surface of the insulating layer 21 away from the substrate 10. The bottom of the process groove 30 is provided on the circuit layer 22, and the bottom of the groove is located on the surface of the circuit layer 22 close to the insulating layer 21.

[0059] The groove wall of the process groove 30 has a first groove wall section 311 located in the insulating layer 21 . The first groove wall section 311 includes a step structure 40 . A buffer groove 50 is arranged on the outer periphery of the process groove 30 .

[0060] In this embodiment, the substrate 10 is made of glass, the circuit layer 22 is a copper layer, the insulating layer 21 is a silicon nitride layer, the connecting part 70 includes a first metal layer 71 and a second metal layer 72, the first metal layer 71 is closer to the substrate 10 than the second metal layer 72, the first connecting part 70 is a nickel layer, and the second connecting part 70 is a gold layer.

[0061] In this embodiment, by providing the stepped structure 40, on the one hand, the adhesion between the nickel layer and the silicon nitride layer is increased so that a gap is less likely to appear between the two. On the other hand, the presence of the buffer groove 50 can absorb some corrosive elements and minimize the intrusion of corrosive elements into the copper layer.

[0062] It should be noted that, in this embodiment, the first groove wall segment 311 encloses a first region on the extension surface of the insulating layer 21 close to the substrate 10 side. In a cross-section passing through the center of the first region and perpendicular to the first region, the first groove wall segment 311 includes a first end located on the extension surface of the insulating layer 21 far from the substrate 10 side and a second end located on the extension surface of the insulating layer 21 close to the substrate 10 side; the included angle A between the line connecting the first end and the second end and the line connecting the second end and the center of the first region is not limited in this embodiment.

[0063] When the included angle A is the same as that in the first embodiment and satisfies 0° < A ≤ 100°, the adhesion between the insulating layer 21 and the first metal layer 71 can be further improved by cooperating with the stepped structure 40 and the buffer groove 50. When the included angle A is greater than 100 degrees. Since the stepped structure 40 and the buffer groove 50 can improve the adhesion between the nickel layer and the silicon nitride layer, the probability of a gap appearing between the two can be significantly reduced. Therefore, the angle of the included angle A is no longer limited within 0° < A ≤ 100°. In addition, even if a gap appears, the stepped structure 40 and the buffer groove 50 can prevent corrosive elements from entering the circuit layer 22, thereby avoiding corrosion of the circuit layer 22, which belongs to double protection.

[0064] It should be noted that, in this embodiment, the stepped structure 40 and the buffer groove 50 are provided simultaneously, but this is not restrictive. In some other embodiments not shown in the figure, the stepped structure 40 can be provided alone, or the stepped structure 40 can be replaced with an auxiliary groove structure on the first groove wall segment 311. Without violating the inventive concept of the present invention, the above methods are all within the protection scope of the present invention.

[0065] As Figure 6 shown in the fourth embodiment, a substrate structure is also disclosed, including: a substrate 10, an electrical connection layer 20, and a connection portion 70. Among them, the electrical connection layer 20 includes an insulating layer 21 and a circuit layer 22 that are in contact with each other. The circuit layer 22 is provided on the substrate 10, and the insulating layer 21 is provided on the circuit layer 22.

[0066] A process groove 30 is provided on the electrical connection layer 20, and the connection portion 70 is used to fill the process groove 30. The notch of the process groove 30 is flush with the extension surface of the insulating layer 21 far from the substrate 10 side. The bottom of the process groove 30 is provided on the circuit layer 22, and the bottom is located on the surface of the circuit layer 22 close to the insulating layer 21.

[0067] The groove wall of the process groove 30 has a first groove wall segment 311 located in the insulating layer 21. The first groove wall segment 311 encloses a first region on the extension surface of the insulating layer 21 close to the substrate 10 side. In a cross-section passing through the center of the first region and perpendicular to the first region, the first groove wall segment 311 includes a first end on the extension surface of the insulating layer 21 away from the substrate 10 side and a second end on the extension surface of the insulating layer 21 close to the substrate 10 side; the included angle A between the connection line of the first end and the second end and the connection line between the second end and the center of the first region satisfies: 0° < A ≤ 100°.

[0068] In other words, as shown in Figure 6 In this embodiment, a through hole 31 is provided on the insulating layer 21. The through hole 31 penetrates the insulating layer 21 in the up and down direction as shown in Figure 7 , and the through hole 31 and the upper surface of the circuit layer 22 in Figure 6 enclose the process groove 30. The inner wall surface of the through hole 31 forms the first groove wall segment 311. As can be seen from Figure 6 , the included angle A between the connection line of the first end and the second end of the first groove wall segment 311 and the connection line between the second end and the center of the first region satisfies: 0° < A ≤ 100°. Preferably, in this embodiment, the included angle A is 60°, which is equivalent to Figure 6 the included angle A between the inner wall of the process groove 30 and the upper surface of the circuit layer 22 in

[0069] In this embodiment, a buffer groove 50 is provided on the extension surface of the insulating layer 21 away from the substrate 10 side. That is to say, a buffer groove 50 is provided on the upper surface of the insulating layer 21 in Figure 6 .

[0070] In this embodiment, the substrate 10 is made of glass, the circuit layer 22 is a copper layer, the insulating layer 21 is a silicon nitride layer, the connection part 70 includes a first metal layer 71 and a second metal layer 72. The first metal layer 71 is closer to the substrate 10 than the second metal layer 72. The first connection part 70 is a nickel layer, and the second connection part 70 is a gold layer.

[0071] In this embodiment, the existence of the buffer groove 50 can absorb some corrosive elements and minimize the intrusion of corrosive elements into the copper layer as much as possible.

[0072] It should be noted that in this embodiment, although when the included angle A satisfies: 0° < A ≤ 100°, the buffer groove 50 can be used to further prevent the external corrosive elements from corroding the copper in the circuit layer. When the included angle A is greater than 100 degrees. Since the buffer groove 50 can absorb some corrosive elements and minimize the intrusion of corrosive elements into the copper layer, even if there is a gap between the nickel layer and the silicon carbide layer, the corrosive elements entering can also reduce the probability of entering the gap through the buffer groove 50. Therefore, the angle of the included angle A is no longer limited within 0° < A ≤ 100°.

[0073] It should be noted that, in this embodiment, the buffer groove 50 cannot penetrate the copper layer, and the buffer groove 50 is arranged around the process groove 30 to form a ring belt connected end to end. However, this is not restrictive. In some other embodiments not shown in the figure, the buffer groove 50 can be intermittently arranged without penetrating the copper layer. Under the premise of not violating the inventive concept of the present invention, the above methods are all within the protection scope of the present invention.

[0074] like Figure 7 and Figure 8 The fifth embodiment shown also discloses a substrate structure, including: a substrate 10, an electrical connection layer 20, an isolation ring and a connection portion 70. The electrical connection layer 20 includes an insulating layer 21 and a circuit layer 22 that are arranged in contact with each other, the circuit layer 22 is arranged on the substrate 10, and the insulating layer 21 is arranged on the circuit layer 22.

[0075] like Figure 8 As shown, a process groove 30 is provided on the electrical connection layer 20, and the connecting portion 70 is used to fill the process groove 30. The groove opening of the process groove 30 is flush with the extension surface of the insulating layer 21 away from the substrate 10. The bottom of the process groove 30 is provided on the circuit layer 22, and the bottom of the groove is located on the surface of the circuit layer 22 close to the insulating layer 21.

[0076] like Figure 8 As shown, the groove wall of the process groove 30 has a first groove wall section 311 located in the insulating layer 21 , and the isolation ring is exposed to the process groove 30 in the first groove wall section 311 . The isolation ring is arranged around the process groove 30 to form a ring belt connected end to end.

[0077] In this embodiment, the substrate 10 is made of glass, the circuit layer 22 is a copper layer, the isolation ring is made of copper, the insulating layer 21 is a silicon nitride layer, and the connecting part 70 includes a first metal layer 71 and a second metal layer 72. The first metal layer 71 is closer to the substrate 10 than the second metal layer 72. The first connecting part 70 is a nickel layer, and the second connecting part 70 is a gold layer.

[0078] In this embodiment, by setting an isolation ring 60, during the process of generating the inner layer, the nickel layer will simultaneously adhere to the isolation ring 60 and the bottom of the process groove 30 and continue to adhere and fill the surrounding area, and finally the two will intersect together. Since the isolation ring 60 is a ring belt, the nickel layer attached to the isolation ring 60 is also ring-shaped. After intersecting with the nickel layer formed at the bottom of the groove, the circuit layer 22 at the bottom of the process groove 30 is isolated from the outside. Therefore, even if external corrosive liquid invades, it will only flow onto the isolation ring 60 and will not enter the circuit layer 22 at the bottom of the process groove 30, thereby achieving protection for the bottom circuit layer 22.

[0079] It should be noted that in this embodiment, the first groove wall segment 311 encloses a first region on the extension surface of the insulating layer 21 close to the substrate 10 side. In a cross-section passing through the center of the first region and perpendicular to the first region, the first groove wall segment 311 includes a first end on the extension surface of the insulating layer 21 far from the substrate 10 side and a second end on the extension surface of the insulating layer 21 close to the substrate 10 side; the connection line between the first end and the second end forms an angle A with the connection line between the second end and the center of the first region. In this embodiment, the angle A is not limited.

[0080] When the angle A is the same as that in the first embodiment and satisfies 0° < A ≤ 100°, cooperating with the isolation ring 60 can further improve the adhesion between the insulating layer 21 and the first metal layer 71. When A > 100°, since the isolation ring 60 can also protect the circuit layer 22 at the bottom of the process groove 30, the circuit layer 22 can be prevented from being corroded.

[0081] It should also be noted that in this embodiment, the material of the isolation ring 60 is the same as that of the circuit layer 22, but this is not restrictive. In some other embodiments not shown in the figures, the material of the isolation ring 60 can also be different from that of the circuit layer 22, such as gold, silver, nickel, and aluminum. On the premise of not violating the inventive concept of the present invention, the above methods are all within the protection scope of the present invention.

[0082] According to the second aspect of the present invention, a substrate structure is also disclosed, including: a substrate 10, an electrical connection layer 20, and a connection portion 70. Among them, the electrical connection layer 20 includes an insulating layer 21 and a circuit layer 22 that are in contact with each other. The circuit layer 22 is disposed on the substrate 10, and the insulating layer 21 is disposed on the circuit layer 22.

[0083] A process groove 30 is provided on the electrical connection layer 20, and the connection portion 70 is used to fill the process groove 30. The notch of the process groove 30 is flush with the extension surface of the insulating layer 21 far from the substrate 10 side, and the bottom of the groove is located inside the circuit layer 22; the connection portion 70 includes a first metal layer 71 and a second metal layer 72, and the first metal layer 71 is closer to the substrate 10 than the second metal layer 72.

[0084] The groove wall of the process groove 30 has a first groove wall segment 311 in the insulating layer 21. The first groove wall segment 311 encloses a first region on the extension surface of the insulating layer 21 close to the substrate 10 side. In a cross-section passing through the center of the first region and perpendicular to the first region, the first groove wall segment 311 includes a first end on the extension surface of the insulating layer 21 far from the substrate 10 side and a second end on the extension surface of the insulating layer 21 close to the substrate 10 side. The connection line between the first end and the second end forms an angle A with the connection line between the second end and the center of the first region.

[0085] The process tank 30 includes a through hole 31 penetrating through the insulating layer 21 and a sub-tank portion 32 located in the circuit layer 22. The hole wall of the through hole 31 is the first tank wall section 311; the orthographic projection of the minimum cross-section of the through hole 31 in the direction perpendicular to the thickness of the circuit layer 22 on the substrate 10 is located inside the orthographic projection of the maximum cross-section of the sub-tank portion 32 in the direction perpendicular to the thickness of the circuit layer 22 on the substrate 10.

[0086] Before soldering, the connecting portion 70 needs to be filled into the process tank 30 and overflow, so that the connecting portion 70 contacts the circuit layer 22. During the filling process, the connecting portion 70 adheres and fills gradually from the bottom of the process tank 30 to the notch and the surrounding tank walls of the process tank 30. Since the orthographic projection of the minimum cross-section of the through hole 31 in the direction perpendicular to the thickness of the circuit layer 22 on the substrate 10 is located inside the orthographic projection of the maximum cross-section of the sub-tank portion 32 in the direction perpendicular to the thickness of the circuit layer 22 on the substrate 10, that is, the size of the through hole 31 is less than or equal to the size of the notch of the sub-tank portion 32, during the adhering and filling process of the connecting portion 70, it can abut against the first tank wall section 311 or the lower surface of the insulating layer 21, so that the nickel layer and the insulating layer 21 are in close contact, avoiding the generation of gaps and thus isolating the bottom circuit layer 22.

[0087] It should be noted that the substrate structure of the present invention does not limit the angle of the included angle A. That is to say, the range of the included angle A can be 0° < A ≤ 100°, or A > 100°. As long as it can be ensured that the orthographic projection of the minimum cross-section of the through hole 31 in the direction perpendicular to the thickness of the circuit layer 22 on the substrate 10 is located inside the orthographic projection of the maximum cross-section of the sub-tank portion 32 in the direction perpendicular to the thickness of the circuit layer 22 on the substrate 10. The following will be specifically described in combination with specific embodiments:

[0088] As Fig. 9 shown and Fig.10 shown in Embodiment 6, a substrate structure is disclosed, including: a substrate 10, an electrical connection layer 20 and a connecting portion 70. Among them, the electrical connection layer 20 includes an insulating layer 21 and a circuit layer 22 which are in contact with each other. The circuit layer 22 is disposed on the substrate 10, and the insulating layer 21 is disposed on the circuit layer 22.

[0089] As Fig. 9 shown, a process tank 30 is disposed on the electrical connection layer 20. The connecting portion 70 is used to fill the process tank 30. The notch of the process tank 30 is flush with the extension surface on the side of the insulating layer 21 away from the substrate 10, and the bottom of the tank is located inside the circuit layer 22.

[0090] The groove wall of the process groove 30 has a first groove wall section 311 located in the insulating layer 21. The first groove wall section 311 encloses a first region on the extension surface of the insulating layer 21 close to the substrate 10. In a cross section passing through the center of the first region and perpendicular to the first region, the first groove wall section 311 includes a first end located on the extension surface of the insulating layer 21 away from the substrate 10 and a second end located on the extension surface of the insulating layer 21 close to the substrate 10. The line connecting the first end and the second end and the line connecting the second end and the center of the first region form an angle A, and the angle A is 90°.

[0091] like Fig.10 As shown, the process groove 30 includes a through hole 31 penetrating the insulating layer 21 and a sub-groove portion 32 located in the circuit layer 22, and the hole wall of the through hole 31 is a first groove wall section 311; the orthographic projection of the through hole 31 in any cross section perpendicular to the thickness direction of the circuit layer 22 on the substrate 10 coincides with the orthographic projection of the sub-groove portion 32 in any cross section perpendicular to the thickness direction of the circuit layer 22 on the substrate 10. That is, in this embodiment, Fig.10 The inner wall of the through hole 31 and the inner wall of the sub-groove 32 are both vertical and perpendicular to the bottom of the sub-groove 32 , ie, the bottom of the process groove 30 , and the size of the through hole 31 matches that of the sub-groove 32 .

[0092] In this embodiment, the substrate 10 is made of glass, the circuit layer 22 is a copper layer, the insulating layer 21 is a silicon nitride layer, the connecting part 70 includes a first metal layer 71 and a second metal layer 72, the first metal layer 71 is closer to the substrate 10 than the second metal layer 72, the first connecting part 70 is a nickel layer, and the second connecting part 70 is a gold layer.

[0093] Before welding, the connection part 70 needs to be filled into the process groove 30 and overflow, so that the connection part 70 contacts the circuit layer 22. During the filling process, the connection part 70 is gradually attached and filled from the bottom of the process groove 30 to the groove opening and the surrounding groove walls of the process groove 30. Since the inner wall of the groove is vertical and perpendicular to the bottom of the sub-groove 32, it is equivalent to that the groove wall of the entire process groove 30 is perpendicular to the groove bottom. During the attachment and filling process, the connection part 70 can be pressed against the groove wall of the process groove 30, so that the nickel layer and the insulating layer 21 are in close contact, avoiding the generation of gaps and isolating the circuit layer 22 at the bottom.

[0094] It should be noted that in this embodiment, the included angle A is 90°, satisfying 0° < A ≤ 100°. In this case, the first groove wall segment 311 can cooperate with the groove wall of the sub-groove portion 32, so that during the attachment and filling process of the connecting portion 70, the nickel layer can be in closer contact with the copper layer and the insulating layer 21, avoiding the generation of gaps and thus isolating the bottom circuit layer 22. However, this is not restrictive. In some other embodiments not shown in the figure, it can also be the case where the included angle A > 100°. In this case, since the sub-groove portion 32 is perpendicular to the groove bottom, the nickel layer and the copper layer are in close contact and cover the copper layer during the expansion process. Therefore, it can still play a role in isolating the circuit layer 22.

[0095] As Fig.11 and Fig.12 shown in Embodiment VII, a substrate structure is disclosed, which is basically the same as Embodiment VI, except that in this embodiment, the orthographic projection of the opening of the sub-groove portion 32 on the substrate 10 is located inside the orthographic projection of the groove bottom of the sub-groove portion 32 on the substrate 10. In other words, the groove wall of the sub-groove portion 32 gradually narrows from its groove bottom to the groove opening of the sub-groove portion 32, and moreover, the size of the through hole 31 matches the size of the groove opening of the sub-groove portion 32. As Fig.11 shown, in the direction from the groove bottom to the groove opening of the entire process groove 30, the process groove 30 first forms a contraction section and then smoothly transitions to the first groove wall segment 311, where the included angle A is 90°, that is, the inner wall of the first groove wall segment 311 is perpendicular to the groove bottom of the process groove 30.

[0096] During the filling process of the connecting portion 70, the connecting portion 70 adheres and fills from the groove bottom of the process groove 30 gradually to the groove opening and the surrounding groove walls of the process groove 30. Since a contraction section is first formed in the direction from the groove bottom to the groove opening of the process groove 30, during the attachment and filling process of the connecting portion 70, it will get closer and closer to the inner wall of the process groove 30 and finally abut against the groove wall of the process groove 30, so that the nickel layer is in close contact with the insulating layer 21, avoiding the generation of gaps and thus isolating the bottom circuit layer 22.

[0097] It should be noted that in this embodiment, the included angle A is 90°, satisfying 0° < A ≤ 100°. In this case, the first groove wall segment 311 can cooperate with the groove wall of the sub-groove portion 32, so that during the attachment and filling process of the connecting portion 70, the nickel layer can be in closer contact with the copper layer and the insulating layer 21, avoiding the generation of gaps and thus isolating the bottom circuit layer 22. However, this is not restrictive. In the embodiments VIII as Fig.13 and Fig.14 disclosed, its structure is basically the same as that of Embodiment VII, except that the included angle A > 100°, that is to say, the first groove wall segment 311 is Fig.14 a structure that gradually expands from bottom to top, and the sub-groove portion 32 is Fig.14 In this case, during the attachment and filling process of the connection part 70, due to the existence of the shrinkage structure, the nickel layer and the copper layer are still in close contact, and the copper layer is covered during the expansion process, so the circuit layer 22 can still be isolated.

[0098] like Fig.15 and Fig.16 The structure of the ninth embodiment shown is basically the same as that of the eighth embodiment, except that, in this embodiment, the orthographic projection of the first region on the substrate 10 is located inside the orthographic projection of the opening of the sub-groove 32 on the side close to the insulating layer 21 on the substrate 10. In this embodiment, the angle A is greater than 100°, that is, the through hole 31 is Fig.15 The structure is gradually expanded from bottom to top, and the sub-groove portion 32 is also Fig.15 The structure gradually expands from bottom to top, and at the same time, the through hole 31 is Fig.15 The opening at the lower middle part is completely smaller than the slot of the sub-slot portion 32, and the surface of the insulating layer 21 close to the substrate 10 forms the second slot wall section 312 of the process slot 30; the second slot wall section 312 surrounds the first area and forms a ring belt connected end to end. In other words, the second slot wall section 312 is Fig.15 The lower surface of the middle portion of the insulating layer 21 is exposed to the inside of the process groove 30 and is a ring-shaped structure connected end to end.

[0099] In this embodiment, although the through hole 31 and the sub-groove portion 32 are Fig.15 In the embodiment, the structure is gradually expanded from bottom to top. However, since the orthographic projection of the first region on the substrate 10 is located inside the orthographic projection of the opening of the sub-groove 32 close to the insulating layer 21 on the substrate 10, that is, the through hole 31 is located in the substrate 10. Fig.15 The opening in the lower middle part is completely smaller than the notch of the sub-groove portion 32, thus forming a second groove wall section 312 in the shape of a ring. During the attachment and filling process of the connecting portion 70, when the nickel layer expands to the notch position of the sub-groove portion 32, part of the nickel will press against the second groove wall section 312, thereby closing the entire notch position, thereby isolating the copper layer from the outside and preventing the circuit layer 22 from being corroded.

[0100] It should be noted that, in the present embodiment, the orthographic projection of the opening of the sub-groove portion 32 on the substrate 10 is located outside the orthographic projection of the bottom of the sub-groove portion 32 on the substrate 10, but this is not restrictive. In some other embodiments not shown in the figure, the orthographic projection of the opening of the sub-groove portion 32 on the substrate 10 is located inside or overlaps with the orthographic projection of the bottom of the sub-groove portion 32 on the substrate 10. Under the premise of not violating the inventive concept of the present invention, the above situations are all within the protection scope of the present invention.

[0101] It should also be noted that in the above embodiment, the material of the circuit layer 22 is copper. However, this is not restrictive, and in some other embodiments not shown in the figure, the material of the circuit layer 22 can also be any one or more of gold, silver, nickel, and aluminum, as long as the material can be made into a circuit, it is within the protection scope of the present invention.

[0102] It should also be noted that in the above embodiment, the material of the insulating layer 21 is silicon nitride. However, this is not restrictive, and in some other embodiments not shown in the figure, the material of the insulating layer 21 can also be silicon dioxide, silicon carbide, polypropylene or tetrachlorofluoroethylene, as long as it is an insulating material that can be applied to the circuit layer, it is within the protection scope of the present invention.

[0103] It can be understood that in the above embodiment, the process groove 30 is a pad opening for connecting with other electronic components. In order to ensure the reliability of the connection of the connecting portion 70 with other electronic components in the subsequent process steps, the orthographic projection of the connecting portion 70 on the substrate 10 surrounds the orthographic projection of the process groove 30 on the substrate 10. In other words, the connecting portion 70 should fill and overflow the process groove 30 and reach a certain height to ensure reliable connection with the pins of the electronic components to be soldered.

[0104] In addition, it can be understood by those skilled in the art that in the above-mentioned embodiment, the process groove 30 can be implemented by a multiplexing process, for example: by adjusting the density of the silicon nitride layer or by adjusting the etching atmosphere. Among them, by adjusting the density of the silicon nitride layer in the process so that the density of the upper layer is greater than the density of the lower layer, the etching resistance of the upper layer will become higher, and a vertical or obtuse edge morphology will be formed with proper density matching. By adjusting the etching atmosphere, the current etching can be achieved by introducing a specific gas into a closed cavity, ionizing it into plasma, and then bombarding the surface of the material. Different gas combinations and different ratios will affect the etching direction and etching rate, etc., and ultimately affect the etching effect. By adjusting the gas combination or ratio, a vertical or obtuse edge morphology of the silicon nitride layer can be achieved.

[0105] According to a fourth aspect of the present invention, a light-emitting component is also disclosed, comprising an LED light-emitting chip and the substrate structure described above, wherein the LED light-emitting chip is electrically connected to the substrate structure through a connecting portion 70; wherein the light-emitting component is one of a display panel or a backlight panel. The LED can be a micro-LED chip or a mini-LED chip

[0106] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A substrate structure, characterized in that: include: substrate; An electrical connection layer, the electrical connection layer comprising an insulating layer and a circuit layer arranged in contact with each other, the circuit layer being arranged on the substrate, and the insulating layer being arranged on the circuit layer; A process groove is provided on the electrical connection layer, the groove opening of the process groove is flush with the extension surface of the insulating layer away from the substrate, and the groove bottom of the process groove is provided on the circuit layer; The groove wall of the process groove has a first groove wall section located in the insulating layer, the first groove wall section encloses a first area on an extension surface of the insulating layer close to the substrate, and in a cross section passing through the center of the first area and perpendicular to the first area, the first groove wall section includes a first end located on an extension surface of the insulating layer away from the substrate and a second end located on an extension surface of the insulating layer close to the substrate; The angle A between the line connecting the first end and the second end and the line connecting the second end and the center of the first region satisfies: 0° <A≤100°。 2. The substrate structure according to claim 1, characterized in that: The groove bottom is located on the surface of the circuit layer close to the insulating layer.

3. The substrate structure according to claim 1, characterized in that: The groove bottom is located inside the circuit layer; The process groove comprises a through hole penetrating the insulating layer and a sub-groove portion located in the circuit layer, and the hole wall of the through hole is the first groove wall section; The orthographic projection of the minimum cross section of the through hole in a direction perpendicular to the thickness of the circuit layer on the substrate is located inside the orthographic projection of the maximum cross section of the sub-groove in a direction perpendicular to the thickness of the circuit layer on the substrate.

4. The substrate structure according to claim 3, characterized in that: The orthographic projection of the first region on the substrate is located inside the orthographic projection of the opening of the sub-groove portion close to the insulating layer on the substrate.

5. The substrate structure according to claim 4, characterized in that: The groove wall of the process groove comprises a second groove wall section, and the second groove wall section is located on the surface of the insulating layer close to the substrate; The second groove wall section is arranged around the first area to form an annular belt connected end to end.

6. The substrate structure according to claim 4, characterized in that: The orthographic projection of the opening of the sub-groove portion on the substrate is located inside the orthographic projection of the groove bottom of the sub-groove portion on the substrate.

7. The substrate structure according to claim 1, characterized in that: The first groove wall section includes a step structure, or the first groove wall section includes an auxiliary groove structure.

8. The substrate structure according to claim 1, characterized in that: A buffer groove is provided on an extended surface of the insulating layer away from the substrate; The buffer tank is arranged around the process tank to form an annular belt connected end to end.

9. The substrate structure according to claim 1, characterized in that: Also includes: An isolation ring, the isolation ring is exposed to the process groove at the first groove wall section, the isolation ring is arranged around the process groove and forms an annular belt connected end to end; Wherein, the material of the isolation ring is the same as that of the circuit layer.

10. The substrate structure according to any one of claims 1 to 9, characterized in that: The substrate structure further comprises: A connecting portion, the connecting portion filling the process groove and being arranged in contact with the circuit layer, the connecting portion comprising a first metal layer and a second metal layer, the first metal layer being closer to the substrate than the second metal layer; The material of the first metal layer includes nickel, and the material of the second metal layer includes gold.

11. The substrate structure according to claim 10, characterized in that: The material of the circuit layer includes any one or more of copper, gold, silver, nickel and aluminum.

12. The substrate structure according to claim 10, characterized in that: The orthographic projection of the connecting portion on the substrate surrounds the orthographic projection of the process groove on the substrate.

13. A light emitting component, characterized in that: comprising an LED light-emitting chip and a substrate structure according to any one of claims 1 to 12, wherein the LED light-emitting chip is electrically connected to the substrate structure through the connecting portion; Wherein, the light emitting component is one of a display panel and a backlight panel.

14. A substrate structure, characterized in that: include: substrate; An electrical connection layer, the electrical connection layer comprising an insulating layer and a circuit layer arranged in contact with each other, the circuit layer being arranged on the substrate, and the insulating layer being arranged on the circuit layer; A process groove is provided on the electrical connection layer, the groove opening of the process groove is flush with the extension surface of the insulating layer away from the substrate, and the groove bottom of the process groove is provided on the circuit layer; The groove wall of the process groove has a first groove wall section located in the insulating layer, the first groove wall section encloses a first area on an extension surface of the insulating layer close to the substrate, and in a cross section passing through the center of the first area and perpendicular to the first area, the first groove wall section includes a first end located on an extension surface of the insulating layer away from the substrate and a second end located on an extension surface of the insulating layer close to the substrate; The groove bottom is located inside the circuit layer; the process groove includes a through hole penetrating the insulating layer and a sub-groove portion located in the circuit layer, and the hole wall of the through hole is the first groove wall section; The orthographic projection of the minimum cross section of the through hole in a direction perpendicular to the thickness of the circuit layer on the substrate is located inside the orthographic projection of the maximum cross section of the sub-groove in a direction perpendicular to the thickness of the circuit layer on the substrate.

15. The substrate structure according to claim 14, characterized in that: The orthographic projection of the first region on the substrate is located inside the orthographic projection of the opening of the sub-groove portion close to the insulating layer on the substrate; The groove wall of the process groove comprises a second groove wall section, and the second groove wall section is located on the surface of the insulating layer close to the substrate; The second groove wall section is arranged around the first area to form an annular belt connected end to end.

16. The substrate structure according to claim 14 or 15, characterized in that: The substrate structure further comprises: A connecting portion, the connecting portion filling the process groove and being arranged in contact with the circuit layer, the connecting portion comprising a first metal layer and a second metal layer, the first metal layer being closer to the substrate than the second metal layer; The material of the first metal layer includes nickel, the material of the second metal layer includes gold; the material of the circuit layer includes any one or more of copper, gold, silver, nickel and aluminum.

17. A light emitting component, characterized in that: comprising an LED light-emitting chip and a substrate structure according to any one of claims 14 to 16, wherein the LED light-emitting chip is electrically connected to the substrate structure through the connecting portion; Wherein, the light emitting component is one of a display panel and a backlight panel.

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