Manufacturing method of LED device and LED device

Abstract

The invention relates to a manufacturing method of an LED device and the LED device. The manufacturing method of the LED device comprises the steps that a driving IC chip is transferred to an insulating substrate; insulating transparent colloid is molded on the insulating substrate, so that the driving IC chip is embedded in the insulating transparent colloid, and an IC pin of the driving IC chip is exposed out of the insulating transparent colloid; a front conducting circuit is manufactured on the surface of the insulating transparent colloid, a back conducting circuit is manufactured on the bottom face of the insulating substrate, and the back conducting circuit is electrically connected with the front conducting circuit; and transferring the light-emitting chip to the surface of the insulating transparent colloid, and electrically connecting the light-emitting chip, the IC pin of the driving IC chip and the front conductive circuit. According to the invention, the insulating transparent colloid is molded on the insulating substrate, so that the driving IC chip is embedded in the insulating transparent colloid, and after the light-emitting chip is transferred to the surface of the insulating transparent colloid, the light-emitting chip is located above the driving IC chip, and the driving IC chip does not shield the emergent light of the light-emitting chip.

Description

Technical Field

[0001] The present application relates to the technical field of LED packaging, and in particular to a method for manufacturing an LED device and an LED device. Background Art

[0002] As we all know, LED devices have the advantages of high brightness, high contrast, high color gamut, long life, strong anti-collision ability, high reliability, etc. They are widely used in high-definition display fields such as high-end rental / car display / cinema live broadcast / virtual shooting, etc.

[0003] Although the common dynamic scanning scheme of LED screen control IC is external, it saves IC usage, but the screen has obvious scanning lines and the module board has too many connections, so the common dynamic scanning screen module board requires at least 4 layers of PCB, and as the dot pitch decreases, the module board requires 6-8 layers of PCB or even more. This increases the difficulty and cost of PCB process. Therefore, LED lamp beads with built-in IC are gradually entering the public's field of vision.

[0004] Built-in IC lamp beads have high integration of LED devices and low requirements for module board PCB. Generally, 1-2 layers of PCB are sufficient to meet the requirements, which has also spawned various transparent screens. And built-in IC lamp beads can realize static control of lamp beads, and the screen body will not produce scan lines.

[0005] In the related technology, there is a built-in IC lamp bead, which fixes the IC chip on a substrate and arranges a light-emitting chip around the IC chip. The light-emitting chip and the IC chip are both located on the surface of the substrate, and then a resin layer is encapsulated on the substrate to plastic-seal the light-emitting chip and the IC chip inside the lamp bead.

[0006] However, in this solution, since the light emitting chip and the IC chip are both located on the same surface of the substrate, the IC chip will block the light emitted by the light emitting chip.

[0007] Therefore, it is necessary to design a new method for manufacturing LED devices to overcome the above problems. Summary of the invention

[0008] The present application provides a method for manufacturing an LED device and an LED device, which can solve the technical problem in the related art that an IC chip may block the light emitted by a light-emitting chip.

[0009] In a first aspect, an embodiment of the present application provides a method for manufacturing an LED device, which comprises the following steps:

[0010] Transferring the driver IC chip to the insulating substrate;

[0011] Molding an insulating transparent colloid on the insulating substrate so that the driver IC chip is buried in the insulating transparent colloid and the IC pins of the driver IC chip are exposed from the insulating transparent colloid;

[0012] A front conductive circuit is fabricated on the surface of the insulating transparent colloid, and a back conductive circuit is fabricated on the bottom surface of the insulating substrate, wherein the back conductive circuit is electrically connected to the front conductive circuit;

[0013] The light emitting chip is transferred to the surface of the insulating transparent colloid, and the light emitting chip, the IC pin of the driving IC chip and the front conductive line are electrically connected.

[0014] In combination with the first aspect, in one implementation, molding an insulating transparent colloid on the insulating substrate so that the driver IC chip is embedded in the insulating transparent colloid comprises:

[0015] Covering the IC pins of the driver IC chip with a first mask;

[0016] An insulating transparent colloid is molded on the insulating substrate, and the top surface of the insulating transparent colloid is controlled not to exceed the first mask.

[0017] In combination with the first aspect, in one embodiment, after a front conductive circuit is fabricated on the surface of the insulating transparent colloid and a back conductive circuit is fabricated on the bottom surface of the insulating substrate, and the back conductive circuit is electrically connected to the front conductive circuit, the method further comprises:

[0018] The first mask on the IC pins of the driver IC chip is removed.

[0019] In combination with the first aspect, in one embodiment, a front conductive circuit is formed on the surface of the insulating transparent colloid, and a back conductive circuit is formed on the bottom surface of the insulating substrate, and the back conductive circuit is electrically connected to the front conductive circuit, including:

[0020] Drilling through holes on the insulating substrate and the insulating transparent colloid;

[0021] Metal is electroplated on the inner wall of the through hole, and a front conductive circuit is electroplated on the surface of the insulating transparent colloid, and a back conductive circuit is electroplated on the bottom surface of the insulating substrate, so that the back conductive circuit is electrically connected to the front conductive circuit through the metal plated in the through hole.

[0022] In combination with the first aspect, in one embodiment, metal is electroplated on the inner wall of the through hole, and a front conductive circuit is electroplated on the surface of the insulating transparent colloid, and a back conductive circuit is electroplated on the bottom surface of the insulating substrate, so that the back conductive circuit is electrically connected to the front conductive circuit through the metal plated in the through hole, including:

[0023] Depositing a first metal layer on the inner wall of the through hole, the surface of the insulating transparent colloid, and the bottom surface of the insulating substrate;

[0024] A second mask is covered on the surface of the insulating transparent colloid and the bottom surface of the insulating substrate, wherein the second mask on the surface of the insulating transparent colloid is complementary to the pattern of the front conductive circuit, and the second mask on the bottom surface of the insulating substrate is complementary to the pattern of the back conductive circuit;

[0025] Conducting electroplating on the inner wall of the through hole, the surface of the insulating transparent colloid and the bottom surface of the insulating substrate, so that the area of ​​the first metal layer not covered by the second mask is electroplated to form a second metal layer;

[0026] The second mask is removed, and the first metal layer covering the position of the second mask is removed to obtain the front conductive circuit and the back conductive circuit.

[0027] In combination with the first aspect, in one embodiment, electroplating is performed on the inner wall of the through hole, the surface of the insulating transparent colloid, and the bottom surface of the insulating substrate to form a second metal layer by electroplating in the area of ​​the first metal layer not covered by the second mask, including:

[0028] Immersing the insulating transparent colloid and the insulating substrate in an electroplating solution;

[0029] and connecting the insulating transparent colloid and the periphery of the insulating substrate with an electrical conductor;

[0030] Controlling the electric wire to be energized so that the inner wall of the through hole, the surface of the insulating transparent colloid, and the bottom surface of the insulating substrate not covered by the second mask are electroplated to form a second metal layer;

[0031] The second metal layer on the surface of the insulating transparent colloid and the second metal layer on the bottom of the insulating substrate both form multiple repeating units, the multiple repeating units on the surface of the insulating transparent colloid are interconnected, and the multiple repeating units on the bottom of the insulating substrate are interconnected.

[0032] In combination with the first aspect, in one embodiment, the step of transferring the light emitting chip to the surface of the insulating transparent colloid and electrically connecting the light emitting chip, the IC pin of the driving IC chip, and the front conductive line comprises:

[0033] Transferring the upright light-emitting chip or the flip-chip light-emitting chip to the front conductive circuit, and electrically connecting the upright light-emitting chip or the flip-chip light-emitting chip to the front conductive circuit;

[0034] The upright light-emitting chip or the flip-down light-emitting chip is electrically connected to the corresponding IC pin of the driver IC chip, and the corresponding IC pin of the driver IC chip is electrically connected to the front conductive line.

[0035] In a second aspect, an embodiment of the present application provides an LED device, comprising: an insulating substrate, on which a driver IC chip is provided, and a back conductive circuit is provided on the bottom surface of the insulating substrate; an insulating transparent colloid, which is molded on the insulating substrate so that the driver IC chip is buried in the insulating transparent colloid, and the IC pins of the driver IC chip are exposed from the insulating transparent colloid, and a front conductive circuit is provided on the surface of the insulating transparent colloid, and the front conductive circuit is electrically connected to the back conductive circuit; a light-emitting chip, which is fixed on the surface of the insulating transparent colloid, and the light-emitting chip, the IC pins of the driver IC chip and the front conductive circuit are electrically connected.

[0036] In combination with the second aspect, in one embodiment, the front conductive circuit includes: a plurality of first conductive circuits, the plurality of first conductive circuits are arranged at intervals on the surface of the insulating transparent colloid; a second conductive circuit, the second conductive circuit is surrounded by the plurality of first conductive circuits; the IC pin of the driving IC chip includes a VDD pin and a plurality of OUT pins, the VDD pin is electrically connected to the second conductive circuit; an independent light-emitting chip is fixed on each of the first conductive circuits, the first pole of the light-emitting chip is electrically connected to the second conductive circuit, and the second pole is electrically connected to the corresponding OUT pin, and the light-emitting chip is a face-up light-emitting chip or a flip-down light-emitting chip.

[0037] In combination with the second aspect, in one implementation, both the first conductive circuit and the second conductive circuit extend to the edge of the insulating transparent colloid, and the driver IC chip is located between the two first conductive circuits.

[0038] In combination with the second aspect, in one embodiment, the front conductive circuit also includes a DIN conductive circuit, a GND conductive circuit and a DOUT conductive circuit, and the DIN conductive circuit, the GND conductive circuit, the DOUT conductive circuit and the second conductive circuit are spaced around the multiple first conductive circuits; the IC pin of the driver IC chip also includes a DIN pin, a GND pin and a DOUT pin, the DIN pin is electrically connected to the DIN conductive circuit, the GND pin is electrically connected to the GND conductive circuit, and the DOUT pin is electrically connected to the DOUT conductive circuit.

[0039] The beneficial effects brought by the technical solution provided in the embodiments of the present application include:

[0040] By molding an insulating transparent colloid on an insulating substrate, the driving IC chip is buried in the insulating transparent colloid. After the light-emitting chip is transferred to the surface of the insulating transparent colloid, the light-emitting chip is located above the driving IC chip. The driving IC chip will not block the light output of the light-emitting chip, thereby solving the technical problem in the related technology that the IC chip will block the light output of the light-emitting chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0042] Figure 1 A flowchart of a method for manufacturing an LED device provided in an embodiment of the present application;

[0043] Figure 2 A schematic diagram of the structure of step S1 provided in an embodiment of the present application;

[0044] Figure 3 A schematic diagram of the structure of step S2 provided in an embodiment of the present application;

[0045] Figure 4 Provided in the embodiments of this application Figure 3 Schematic diagram of top view;

[0046] Figure 5 A schematic diagram of the structure of step S321 provided in an embodiment of the present application;

[0047] Figure 6 A schematic diagram of the structure of step S322 provided in an embodiment of the present application;

[0048] Figure 7 Provided in the embodiments of this application Figure 6 Schematic diagram of top view;

[0049] Figure 8 A schematic diagram of the structure of step S324 provided in an embodiment of the present application;

[0050] Fig. 9 for Figure 8 FIG. 4 is a top view schematic diagram after removing the first mask;

[0051] Fig.10 A schematic diagram of the structure of the second metal layer formed by electroplating and before cutting provided in an embodiment of the present application;

[0052] Fig.11 A schematic top view of a front-mounted light-emitting chip provided in an embodiment of the present application being installed on a front conductive circuit;

[0053] Fig.12 A schematic top view of a flip-chip light-emitting chip provided in an embodiment of the present application mounted on a front conductive circuit;

[0054] Fig.13 A side view schematic diagram of a front-mounted light-emitting chip provided in an embodiment of the present application being installed on a front conductive circuit;

[0055] Fig.14 A side view schematic diagram of a flip-chip light-emitting chip provided in an embodiment of the present application being mounted on a front conductive circuit;

[0056] Fig.15 This is a schematic diagram of the back structure of the LED device provided in an embodiment of the present application.

[0057] In the figure:

[0058] 11. Insulating substrate; 111. White oil;

[0059] 12. Driver IC chip; 121. IC pin;

[0060] 13. Insulating transparent colloid; 14. Through hole;

[0061] 2. Positive conductive circuit; 21. First conductive circuit; 22. Second conductive circuit; 23. DIN conductive circuit; 24. GND conductive circuit; 25. DOUT conductive circuit;

[0062] 3. Back conductive circuit; 4. Light-emitting chip; 5. First mask;

[0063] 6. First metal layer; 7. Second mask; 8. Metal wire; 9. Transparent adhesive layer; 10. Second metal layer; p, repeating unit;

[0064] A. Electrical conductors. DETAILED DESCRIPTION

[0065] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0066] The embodiments of the present application provide a method for manufacturing an LED device and an LED device, which can solve the technical problem in the related art that an IC chip may block the light emitted by a light-emitting chip.

[0067] See also Figure 1 As shown, a method for manufacturing an LED device provided in an embodiment of the present application may include the following steps:

[0068] S1: Transfer the driver IC chip 12 to the insulating substrate 11. In this step, the driver IC chip 12 can be placed at a suitable position on the upper surface of the insulating substrate 11 as required (see Figure 2 shown).

[0069] S2: Molding an insulating transparent colloid 13 on the insulating substrate 11, so that the driver IC chip 12 is embedded in the insulating transparent colloid 13, and the IC pin 121 of the driver IC chip 12 is exposed from the insulating transparent colloid 13 (see Figure 3 shown).

[0070] In step S2, the driver IC chip 12 is located on the upper surface of the insulating substrate 11 and occupies a small position. The insulating transparent colloid 13 is molded to the position on the insulating substrate 11 where the driver IC chip 12 is not set, and is wrapped around the driver IC chip 12, but the upper surface of the driver IC chip 12 is not wrapped. The IC pins 121 on the upper surface of the driver IC chip 12 need to be exposed to facilitate subsequent electrical connection with the light-emitting chip 4.

[0071] S3: making a front conductive circuit 2 on the surface of the insulating transparent colloid 13 , and making a back conductive circuit 3 on the bottom surface of the insulating substrate 11 , and the back conductive circuit 3 is electrically connected to the front conductive circuit 2 .

[0072] S4: transferring the light emitting chip 4 to the surface of the insulating transparent colloid 13 , and electrically connecting the light emitting chip 4 , the IC pin 121 of the driving IC chip 12 , and the front conductive line 2 .

[0073] In this embodiment, after step S4, a transparent adhesive layer 9 can be encapsulated on top of the insulating transparent colloid 13, and the light-emitting chip 4 can be encapsulated in the transparent adhesive layer 9, and each LED device finally formed can have multiple light-emitting chips 4, for example, three light-emitting chips 4 of red, green and blue can be set.

[0074] In this embodiment, the driver IC chip 12 is first transferred on the insulating substrate 11, and then the insulating transparent colloid 13 is molded on the insulating substrate 11, so that the driver IC chip 12 is buried in the insulating transparent colloid 13. After the light-emitting chip 4 is transferred to the surface of the insulating transparent colloid 13, the driver IC chip 12 is buried and is not in the same plane as the light-emitting chip 4. The light-emitting chip 4 is located above the driver IC chip 12. The driver IC chip 12 will not block the light output of the light-emitting chip 4, and the light-emitting chip 4 can be powered by the driver IC chip 12, the front conductive circuit 2 and the back conductive circuit 3, thereby solving the technical problem in the related art that the IC chip will block the light output of the light-emitting chip 4.

[0075] Furthermore, in this embodiment, when manufacturing the LED substrate formed by the insulating substrate 11 and the insulating transparent colloid 13 , the driver IC chip 12 is integrated into the LED substrate, which can simplify the subsequent packaging process of the LED device.

[0076] Furthermore, in one embodiment, molding an insulating transparent colloid 13 on the insulating substrate 11 so that the driving IC chip 12 is embedded in the insulating transparent colloid 13 may include:

[0077] S21: Cover the IC pin 121 of the driver IC chip 12 with a first mask 5 (see Figure 2 shown).

[0078] S22: molding the insulating transparent colloid 13 on the insulating substrate 11, and controlling the top surface of the insulating transparent colloid 13 not to exceed the first mask 5 (see Figure 3 shown).

[0079] In this embodiment, before molding the insulating transparent colloid 13, a first mask 5 is firstly covered on the IC pin 121 of the driving IC chip 12, which can protect the IC pin 121, and the top surface of the insulating transparent colloid 13 is not higher than the first mask 5, that is, the first mask 5 is exposed (see Figure 4 As shown), the first mask 5 can be subsequently dissolved and removed by a specific chemical reagent.

[0080] Preferably, after the front conductive circuit 2 is formed on the surface of the insulating transparent colloid 13, and the back conductive circuit 3 is formed on the bottom surface of the insulating substrate 11, and the back conductive circuit 3 is electrically connected to the front conductive circuit 2, the method may further include: removing the first mask 5 (see Fig. 9 In this embodiment, after the front conductive circuit 2 and the back conductive circuit 3 are fabricated, the first mask 5 on the IC pin 121 of the driver IC chip 12 can be removed using a NaOH solution to facilitate subsequent electrical connection of the IC pin 121 with the light emitting chip 4.

[0081] Furthermore, in one embodiment, a front conductive circuit 2 is fabricated on the surface of the insulating transparent colloid 13, and a back conductive circuit 3 is fabricated on the bottom surface of the insulating substrate 11, and the back conductive circuit 3 is electrically connected to the front conductive circuit 2, including:

[0082] S31: Drill through holes 14 on the insulating substrate 11 and the insulating transparent colloid 13 (see Figure 5 shown).

[0083] S32: Electroplating metal on the inner wall of the through hole 14, electroplating the surface of the insulating transparent colloid 13 to form the front conductive circuit 2, and electroplating the bottom surface of the insulating substrate 11 to form the back conductive circuit 3, so that the back conductive circuit 3 is electrically connected to the front conductive circuit 2 through the metal plated in the through hole 14 (see Figure 8 shown).

[0084] In this embodiment, holes are first drilled on the insulating substrate 11 and the insulating transparent colloid 13, and the front conductive circuit 2 and the back conductive circuit 3 are connected through the metal in the through hole 14 to achieve electrical connection between the front conductive circuit 2 and the back conductive circuit 3 without increasing the thickness of the insulating substrate 11 and the insulating transparent colloid 13; of course, in other embodiments, other methods can also be used to achieve electrical connection between the front conductive circuit 2 and the back conductive circuit 3, and are not limited to this.

[0085] Further, in some optional embodiments, electroplating metal on the inner wall of the through hole 14, electroplating the surface of the insulating transparent colloid 13 to form the front conductive circuit 2, and electroplating the bottom surface of the insulating substrate 11 to form the back conductive circuit 3, so that the back conductive circuit 3 is electrically connected to the front conductive circuit 2 through the metal plated in the through hole 14, can include the following steps:

[0086] S321: Depositing a first metal layer 6 on the inner wall of the through hole 14, the surface of the insulating transparent colloid 13 and the bottom surface of the insulating substrate 11 (see Figure 5 shown).

[0087] S322: Cover the surface of the insulating transparent colloid 13 and the bottom surface of the insulating substrate 11 with a second mask 7 (see Figure 6 As shown), wherein the second mask 7 on the surface of the insulating transparent colloid 13 is complementary to the pattern of the front conductive line 2 (see Figure 7 As shown), the second mask 7 on the bottom surface of the insulating substrate 11 is complementary to the pattern of the back conductive circuit 3.

[0088] S323 : performing electroplating on the inner wall of the through hole 14 , the surface of the insulating transparent colloid 13 , and the bottom surface of the insulating substrate 11 , so as to form a second metal layer 10 by electroplating in the area of ​​the first metal layer 6 not covered by the second mask 7 .

[0089] S324: Remove the second mask 7, and remove the first metal layer 6 covering the second mask 7 to obtain the front conductive circuit 2 and the back conductive circuit 3 (see Figure 8 shown).

[0090] In this embodiment, after drilling the through hole 14 on the insulating substrate 11 and the insulating transparent colloid 13, a thin layer of copper (of course, other metals can also be used) can be deposited on the upper surface of the insulating transparent colloid 13, the bottom surface of the insulating substrate 11 and the inner wall of the through hole 14 by chemical methods, that is, the first metal layer 6; then the pattern on the production film is transferred to the upper surface of the insulating transparent colloid 13 and the bottom surface of the insulating substrate 11, that is, a second mask 7 is printed on the upper surface of the insulating transparent colloid 13, and the printed pattern of the second mask 7 is complementary to the front conductive line 2, and a second mask 7 is printed on the bottom surface of the insulating substrate 11. The printed pattern of 7 is complementary to the back conductive circuit 3; then, electroplating is performed on the insulating substrate 11 and the insulating transparent colloid 13 covering the second mask 7, so that a copper layer with a required thickness and a gold, nickel or tin layer with a required thickness (i.e., the second metal layer 10) are electroplated on the area not covered by the second mask 7; then, a solution (e.g., NaOH) can be used to remove the anti-electroplating covering film layer (i.e., the second mask 7) to expose the non-circuit copper layer (i.e., the first metal layer 6 in the non-circuit area); then, the copper layer in the non-circuit area is corroded and removed by chemical reaction; and then, the first mask 5 on the IC pin 121 is removed by using a NaOH solution. Finally, the front conductive circuit 2 is electroplated on the upper surface of the insulating transparent colloid 13, and the back conductive circuit 3 is electroplated on the bottom surface of the insulating substrate 11; see Fig. 9 As shown, the IC pins 121 of the driving IC chip 12 are exposed, and the rest of the IC pins 121 are buried in the insulating transparent colloid 13 .

[0091] In the above embodiment, when designing and manufacturing the front conductive circuit 2 and the back conductive circuit 3, an electroplating process is adopted, which is more cost-effective.

[0092] On the basis of the above technical solution, electroplating is performed on the inner wall of the through hole 14, the surface of the insulating transparent colloid 13 and the bottom surface of the insulating substrate 11 to form the second metal layer 10 by electroplating the area of ​​the first metal layer 6 not covered by the second mask 7, which may include:

[0093] S3231: immersing the insulating transparent colloid 13 and the insulating substrate 11 in a plating solution.

[0094] S3232: Connect the insulating transparent colloid 13 and the periphery of the insulating substrate 11 with an electric conductor A.

[0095] S3233: Control the electrical conductor A to be energized, so that the inner wall of the through hole 14, the surface of the insulating transparent colloid 13, and the area of ​​the bottom surface of the insulating substrate 11 not covered by the second mask 7 are electroplated to form a second metal layer 10; wherein the second metal layer 10 on the surface of the insulating transparent colloid 13 and the second metal layer 10 on the bottom surface of the insulating substrate 11 both form a plurality of repeating units p, the plurality of repeating units p on the surface of the insulating transparent colloid 13 are electrically connected to each other, and the plurality of repeating units p on the bottom surface of the insulating substrate 11 are electrically connected to each other.

[0096] In this embodiment, during the entire process of manufacturing the LED device, a whole large insulating substrate 11 can be used, and multiple driver IC chips 12 can be transferred on the insulating substrate 11. Finally, after the manufacturing is completed, the whole large insulating substrate 11 is cut to form multiple independent LED devices. Fig.10 As shown, it is a schematic diagram of the structure before cutting. Before cutting, the second metal layer 10 on the front side of the insulating transparent colloid 13 is all connected together and connected to the outside world through the electrical conductor A, and the second metal layer 10 on the front side forms a plurality of repeating units p with the same structure. After performing the above step S324, the plurality of repeating units p on the front side and the first metal layer 6 therebelow form a plurality of front conductive circuits 2 with the same structure, and the plurality of repeating units p on the back side and the first metal layer 6 therebelow form a plurality of back conductive circuits 3 with the same structure. Then, after cutting, the space between two adjacent repeating units p is cut, and each independent repeating unit p eventually forms an independent LED device, so that multiple LED devices can be manufactured at one time.

[0097] On the basis of the above technical solution, in one embodiment, the step of transferring the light emitting chip 4 to the surface of the insulating transparent colloid 13 and electrically connecting the light emitting chip 4, the IC pin 121 of the driving IC chip 12 and the front conductive line 2 may include:

[0098] S41 : transferring the upright light-emitting chip 4 or the flip-chip light-emitting chip 4 to the front conductive circuit 2 , and electrically connecting the upright light-emitting chip 4 or the flip-chip light-emitting chip 4 to the front conductive circuit 2 .

[0099] S42 : electrically connecting the upright light-emitting chip 4 or the flip-chip light-emitting chip 4 to the corresponding IC pin 121 of the driver IC chip 12 , and electrically connecting the corresponding IC pin 121 of the driver IC chip 12 to the front conductive circuit 2 .

[0100] In this embodiment, the front conductive circuit 2 can be fixed with either a front mounted light emitting chip 4 or a flip mounted light emitting chip 4. The positive electrode and the negative electrode of the light emitting chip 4 are electrically connected to different positions of the front conductive circuit 2. This embodiment is described by taking the light emitting chips 4 as three chips of red, green and blue as an example. Fig.11 As shown, when the three light-emitting chips 4 of red, green and blue are all upright chips, one of the poles of the red light chip can be directly electrically connected to the front conductive line 2, and the other pole can be electrically connected to the front conductive line 2 through the metal wire 8, and one of the poles of the green and blue light chips can be electrically connected to the driver IC chip 12 through the metal wire 8, and the other pole can be electrically connected to the front conductive line 2 through the metal wire 8; see Fig.12 As shown, when the three red, green and blue light emitting chips 4 are all flip chips, the positive and negative electrodes of the three red, green and blue light emitting chips 4 are directly electrically connected to the positive electrode conductive circuit. In this embodiment, the metal wire 8 can be fixed at both ends by a wire bonding machine.

[0101] See also Fig.13 As shown, the embodiment of the present application further provides an LED device, which may include: an insulating substrate 11, on which a driving IC chip 12 is provided, and a back conductive circuit 3 is provided on the bottom surface of the insulating substrate 11; an insulating transparent colloid 13, which is molded on the insulating substrate 11, so that the driving IC chip 12 is buried in the insulating transparent colloid 13, and the IC pin 121 of the driving IC chip 12 is exposed from the insulating transparent colloid 13, and a front conductive circuit 2 is provided on the surface of the insulating transparent colloid 13, and the front conductive circuit 2 is electrically connected to the back conductive circuit 3; a light-emitting chip 4, which is fixed on the surface of the insulating transparent colloid 13, and the light-emitting chip 4, the IC pin 121 of the driving IC chip 12 and the front conductive circuit 2 are electrically connected.

[0102] The LED device in this embodiment can be manufactured by the manufacturing method provided in any of the above embodiments and realize the corresponding functions. In this embodiment, one LED device is provided with three light emitting chips 4, namely a red light chip, a green light chip and a blue light chip.

[0103] Further, in one embodiment, see Fig.11 As shown, the front conductive circuit 2 may include a plurality of first conductive circuits 21 and a second conductive circuit 22, wherein the plurality of first conductive circuits 21 are arranged at intervals on the surface of the insulating transparent colloid 13; the second conductive circuit 22 surrounds the plurality of first conductive circuits 21; the IC pin 121 of the driving IC chip 12 includes a VDD pin and a plurality of OUT pins, wherein the VDD pin is electrically connected to the second conductive circuit 22; an independent light-emitting chip 4 is fixedly provided on each of the first conductive circuits 21, wherein the first pole of the light-emitting chip 4 is electrically connected to the second conductive circuit 22, and the second pole is electrically connected to the corresponding OUT pin, and the light-emitting chip 4 is a front-mounted light-emitting chip 4 or a flip-chip light-emitting chip 4.

[0104] In this embodiment, three first conductive circuits 21 are provided for three light-emitting chips 4, the three first conductive circuits 21 are arranged in a straight line, and a second conductive circuit 22 is provided, the second conductive circuit 22 includes a first branch and a second branch connected to each other, the first branch and the second branch are perpendicular to each other, and roughly form an L shape, and the first branch and the second branch are located on different sides of the three first conductive circuits 21, and surround the three first conductive circuits 21 from different sides. The VDD pin of the driver IC chip 12 is electrically connected to the first branch through the metal wire 8, and the driver IC chip 12 is provided with three OUT pins, namely, the OUTR pin, the OUTG pin, and the OUTB pin, see Fig.11 As shown, when the light-emitting chips 4 are all upright light-emitting chips 4, the first electrodes of the red light chip, the green light chip and the blue light chip are all electrically connected to the second branch through the metal wire 8, and the second electrode of the red light chip is directly electrically connected to the leftmost first conductive line 21, the leftmost first conductive line 21 is electrically connected to the OUTR pin through the metal wire 8, the second electrode of the green light chip is electrically connected to the OUTG pin through the metal wire 8, and the second electrode of the blue light chip is electrically connected to the OUTB pin through the metal wire 8; see Fig.12 As shown, when the light-emitting chips 4 are all flip-chip light-emitting chips 4, the first poles of the red light chip, the green light chip and the blue light chip are all directly electrically connected to the second branch through the conductive glue, and the second pole of the red light chip is directly electrically connected to the leftmost first conductive circuit 21, and the leftmost first conductive circuit 21 is electrically connected to the OUTR pin through the metal wire 8, the second pole of the green light chip is directly electrically connected to the middle first conductive circuit 21, and the middle first conductive circuit 21 is electrically connected to the OUTG pin through the metal wire 8, and the second pole of the blue light chip is directly electrically connected to the rightmost first conductive circuit 21, and the rightmost first conductive circuit 21 is electrically connected to the OUTB pin through the metal wire 8.

[0105] The special conductive circuit setting makes the front conductive circuit 2 of the LED device of this embodiment applicable to both the front-mounted light-emitting chip 4 and the flip-chip light-emitting chip 4. No additional solder pads are required for the front-mounted and flip-chip versions, and the solder pads can be shared, thereby improving versatility and reducing costs.

[0106] Based on the above technical solution, see Fig.11 As shown, in one embodiment, the front conductive circuit 2 may further include a DIN conductive circuit 23, a GND conductive circuit 24 and a DOUT conductive circuit 25, and the DIN conductive circuit 23, the GND conductive circuit 24, the DOUT conductive circuit 25 and the second conductive circuit 22 are spaced around the multiple first conductive circuits 21; the IC pin 121 of the driver IC chip 12 also includes a DIN pin, a GND pin and a DOUT pin, the DIN pin is electrically connected to the DIN conductive circuit 23, the GND pin is electrically connected to the GND conductive circuit 24, and the DOUT pin is electrically connected to the DOUT conductive circuit 25.

[0107] In this embodiment, the three first conductive circuits 21, the second conductive circuit 22, the DIN conductive circuit 23, the GND conductive circuit 24 and the DOUT conductive circuit 25 are arranged at intervals from each other and are not connected to each other. The second conductive circuit 22, the DIN conductive circuit 23, the GND conductive circuit 24 and the DOUT conductive circuit 25 are respectively located at the four corners of the insulating transparent colloid 13. The second conductive circuit 22, the DIN conductive circuit 23, the GND conductive circuit 24 and the DOUT conductive circuit 25 are electrically connected to the back conductive circuit 3 on the back side of the insulating substrate 11 through the metal in the through hole 14 located at the four corners of the insulating transparent colloid 13; at the same time, the DIN pin of the driver IC chip 12 is electrically connected to the DIN conductive circuit 23 through the metal wire 8, the GND pin of the driver IC chip 12 is electrically connected to the GND conductive circuit 24 through the metal wire 8, and the DOUT pin of the driver IC chip 12 is electrically connected to the DOUT conductive circuit 25 through the metal wire 8, thereby realizing that the red, green and blue light-emitting chip 4 is electrically connected to the back conductive circuit 3 through the front conductive circuit 2 and the driver IC chip 12.

[0108] Further, see Fig.12As shown, in one embodiment, both the first conductive circuit 21 and the second conductive circuit 22 extend to the edge of the insulating transparent colloid 13, and the driver IC chip 12 is located between the two first conductive circuits 21. In this embodiment, not only the first conductive circuit 21 and the second conductive circuit 22, but also the DIN conductive circuit 23, the GND conductive circuit 24 and the DOUT conductive circuit 25 extend to the edge of the insulating transparent colloid 13. With such an arrangement, the front conductive circuit 2 can be formed by electroplating process, that is, when the front conductive circuit 2 is formed, it can be connected to the outside through the electric wire A to energize, so that the front conductive circuit 2 can be formed by electroplating process. The same is true for the back conductive circuit 3, that is, the front conductive circuit 2 and the back conductive circuit 3 can both be electroplated, which is more cost-effective.

[0109] In the above embodiment, DIN represents a signal input terminal, DOUT represents a signal output terminal, GND represents grounding, and VDD represents power supply.

[0110] See also Fig.14 As shown, a transparent adhesive layer 9 may be encapsulated on the insulating transparent colloid 13, and the light emitting chip 4 may be encapsulated in the transparent adhesive layer 9; a white oil 111 ( Fig.15 shown).

[0111] In the description of the present application, it should be noted that the terms "upper", "lower", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. Unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0112] It should be noted that, in this application, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0113] The above description is only a specific implementation of the present application, so that those skilled in the art can understand or implement the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest range consistent with the principles and novel features applied for herein.

Claims

1. A method for manufacturing an LED device, characterized in that: It includes the following steps: Transferring the driver IC chip (12) onto the insulating substrate (11); Molding an insulating transparent colloid (13) on the insulating substrate (11) so that the driving IC chip (12) is embedded in the insulating transparent colloid (13) and the IC pins (121) of the driving IC chip (12) are exposed from the insulating transparent colloid (13); A front conductive circuit (2) is fabricated on the surface of the insulating transparent colloid (13), and a back conductive circuit (3) is fabricated on the bottom surface of the insulating substrate (11), wherein the back conductive circuit (3) is electrically connected to the front conductive circuit (2); The light-emitting chip (4) is transferred to the surface of the insulating transparent colloid (13), and the light-emitting chip (4), the IC pin (121) of the driving IC chip (12), and the front conductive line (2) are electrically connected.

2. The method for manufacturing an LED device according to claim 1, wherein: An insulating transparent colloid (13) is molded on the insulating substrate (11) so that the driving IC chip (12) is embedded in the insulating transparent colloid (13), comprising: Covering the IC pin (121) of the driver IC chip (12) with a first mask (5); An insulating transparent colloid (13) is molded on the insulating substrate (11), and the top surface of the insulating transparent colloid (13) is controlled not to exceed the first mask (5).

3. The method for manufacturing an LED device according to claim 1, wherein: A front conductive circuit (2) is fabricated on the surface of the insulating transparent colloid (13), and a back conductive circuit (3) is fabricated on the bottom surface of the insulating substrate (11), wherein the back conductive circuit (3) is electrically connected to the front conductive circuit (2), comprising: Drilling through holes (14) on the insulating substrate (11) and the insulating transparent colloid (13); Metal is electroplated on the inner wall of the through hole (14), and a front conductive circuit (2) is produced by electroplating on the surface of the insulating transparent colloid (13), and a back conductive circuit (3) is produced by electroplating on the bottom surface of the insulating substrate (11), so that the back conductive circuit (3) is electrically connected to the front conductive circuit (2) through the metal electroplated in the through hole (14).

4. The method for manufacturing an LED device according to claim 3, characterized in that: Electroplating metal on the inner wall of the through hole (14), electroplating on the surface of the insulating transparent colloid (13) to form a front conductive circuit (2), and electroplating on the bottom surface of the insulating substrate (11) to form a back conductive circuit (3), so that the back conductive circuit (3) and the front conductive circuit (2) are electrically connected through the metal plated in the through hole (14), comprising: Depositing a first metal layer (6) on the inner wall of the through hole (14), the surface of the insulating transparent colloid (13), and the bottom surface of the insulating substrate (11); A second mask (7) is covered on the surface of the insulating transparent colloid (13) and the bottom surface of the insulating substrate (11), wherein the second mask (7) on the surface of the insulating transparent colloid (13) is complementary to the pattern of the front conductive circuit (2), and the second mask (7) on the bottom surface of the insulating substrate (11) is complementary to the pattern of the back conductive circuit (3); Conducting electroplating on the inner wall of the through hole (14), the surface of the insulating transparent colloid (13) and the bottom surface of the insulating substrate (11) so that the area on the first metal layer (6) not covered by the second mask (7) is electroplated to form a second metal layer (10); The second mask (7) is removed, and the first metal layer (6) covering the position of the second mask (7) is removed to obtain the front conductive circuit (2) and the back conductive circuit (3).

5. The method for manufacturing an LED device according to claim 4, characterized in that: Electroplating is performed on the inner wall of the through hole (14), the surface of the insulating transparent colloid (13) and the bottom surface of the insulating substrate (11) so that the area on the first metal layer (6) not covered by the second mask (7) is electroplated to form a second metal layer (10), comprising: Immersing the insulating transparent colloid (13) and the insulating substrate (11) in an electroplating solution; and connecting the insulating transparent colloid (13) and the periphery of the insulating substrate (11) with an electric wire (A); Controlling the electric wire (A) to be energized so that the inner wall of the through hole (14), the surface of the insulating transparent colloid (13) and the bottom surface of the insulating substrate (11) not covered by the second mask (7) are electroplated to form a second metal layer (10); The second metal layer (10) on the surface of the insulating transparent colloid (13) and the second metal layer (10) on the bottom surface of the insulating substrate (11) both form a plurality of repeating units (p); the plurality of repeating units (p) on the surface of the insulating transparent colloid (13) are electrically connected to each other, and the plurality of repeating units (p) on the bottom surface of the insulating substrate (11) are electrically connected to each other.

6. The method for manufacturing an LED device according to claim 1, wherein: The step of transferring the light-emitting chip (4) to the surface of the insulating transparent colloid (13), and electrically connecting the light-emitting chip (4), the IC pin (121) of the driving IC chip (12), and the front conductive line (2) comprises: Transferring the upright light-emitting chip (4) or the flip-chip light-emitting chip (4) to the front conductive circuit (2), and electrically connecting the upright light-emitting chip (4) or the flip-chip light-emitting chip (4) to the front conductive circuit (2); The upright light-emitting chip (4) or the flip-down light-emitting chip (4) is electrically connected to the corresponding IC pin (121) of the driver IC chip (12), and the corresponding IC pin (121) of the driver IC chip (12) is electrically connected to the front conductive line (2).

7. An LED device, characterized in that: It includes: An insulating substrate (11), wherein a driving IC chip (12) is provided on the insulating substrate (11), and a back conductive circuit (3) is provided on the bottom surface of the insulating substrate (11); An insulating transparent colloid (13), the insulating transparent colloid (13) being molded on the insulating substrate (11), so that the driving IC chip (12) is embedded in the insulating transparent colloid (13), and the IC pin (121) of the driving IC chip (12) is exposed from the insulating transparent colloid (13), and a front conductive circuit (2) is provided on the surface of the insulating transparent colloid (13), and the front conductive circuit (2) is electrically connected to the back conductive circuit (3); A light-emitting chip (4) is fixedly mounted on the surface of the insulating transparent colloid (13), and the light-emitting chip (4), the IC pin (121) of the driving IC chip (12), and the front conductive circuit (2) are electrically connected.

8. The LED device according to claim 7, characterized in that The front conductive circuit (2) comprises: A plurality of first conductive circuits (21), wherein the plurality of first conductive circuits (21) are arranged at intervals on the surface of the insulating transparent colloid (13); A second conductive circuit (22), the second conductive circuit (22) surrounding the plurality of first conductive circuits (21); The IC pin (121) of the driving IC chip (12) comprises a VDD pin and a plurality of OUT pins, and the VDD pin is electrically connected to the second conductive circuit (22); An independent light-emitting chip (4) is fixedly arranged on each of the first conductive circuits (21); a first pole of the light-emitting chip (4) is electrically connected to the second conductive circuit (22), and a second pole is electrically connected to the corresponding OUT pin; the light-emitting chip (4) is a front-mounted light-emitting chip (4) or a flip-chip light-emitting chip (4).

9. The LED device according to claim 8, characterized in that The first conductive circuit (21) and the second conductive circuit (22) both extend to the edge of the insulating transparent colloid (13), and the driving IC chip (12) is located between the two first conductive circuits (21).

10. The LED device according to claim 8, characterized in that The front conductive circuit (2) further comprises a DIN conductive circuit (23), a GND conductive circuit (24) and a DOUT conductive circuit (25), wherein the DIN conductive circuit (23), the GND conductive circuit (24), the DOUT conductive circuit (25) and the second conductive circuit (22) are distributed around the plurality of first conductive circuits (21) at intervals; The IC pin (121) of the driver IC chip (12) further comprises a DIN pin, a GND pin and a DOUT pin, wherein the DIN pin is electrically connected to the DIN conductive circuit (23), the GND pin is electrically connected to the GND conductive circuit (24), and the DOUT pin is electrically connected to the DOUT conductive circuit (25).

Images