Gallium nitride-based semiconductor laser element

Abstract

The invention discloses a gallium nitride-based semiconductor laser element, which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, wherein a Flokey instantaneous energy band regulation and control layer is arranged between the active layer and the lower waveguide layer; in element distribution of the Flokey instantaneous energy band regulation and control layer has curve distribution of a function y = ax < 2 > + bx + c (a is greater than 0); in / C element proportion distribution of the Flokey instantaneous energy band regulation and control layer has curve distribution of a function y = dx2 + ex + f (d > 0); in / H element proportion distribution of the Flokey instantaneous energy band regulation and control layer has a function y = A + B * ex / cosx first two-quadrant curve distribution; in / O element proportion distribution of the Flokey instantaneous energy band regulation and control layer has curve distribution of a function y = C + x2 + ex. According to the invention, an electron energy band periodically arranged in a momentum space is constructed, so that the change of the quantum state and the change of the electron structure are controlled, and the coupling of the light and the pseudo-spin degree of freedom and the energy band reformation are enhanced to generate an instantaneous energy gap.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a gallium nitride-based semiconductor laser element. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems: Thermal loss: The Stokes frequency shift loss formed by the photon energy difference between the pump light and the oscillation light is converted into heat, and the energy loss caused by the coupling rate from the pump energy level to the laser upper energy level not being 1 is converted into heat. The two together generate a large amount of waste heat, which makes the temperature distribution of the laser uneven, causing uneven distribution of thermal expansion and thermal stress, resulting in temperature quenching, laser breakage, thermal lens effect and stress birefringence effect; the thermal lens produces a lens-like phenomenon in space, and the stress birefringence effect changes the polarization state of the incident light, causing the laser beam to be depolarized and distorted.

[0009] After the laser emits stable laser saturation, the quasi-Fermi levels of holes and electrons are pinned, stimulated radiation dominates, injected carriers are completely converted into photon output, carrier concentration reaches saturation, optical gain reaches saturation, junction voltage also reaches saturation, and the carrier concentration in the cavity does not change with the current. The symmetry breaking corresponding to the phase transition of the laser far from the equilibrium state causes the laser to have discontinuity or mutation phenomena at the threshold, such as conductivity jump, capacitance sink, junction voltage jump, series resistance sink, ideal factor jump, etc. This discontinuity phenomenon is mainly affected by the capture effect of the depletion region, surface conditions, edge effects, deep energy level traps, insulating interface layers and series resistance. Summary of the invention

[0010] The present invention proposes a gallium nitride-based semiconductor laser element, which constructs an electronic energy band with periodic arrangement in momentum space, regulates the band structure, symmetry and topological structure of electrons and periodic potential fields on an ultrafast time scale, thereby controlling the change of quantum state and electronic structure, enhancing the coupling of light and pseudospin degrees of freedom and band renormalization to produce an instantaneous energy gap.

[0011] The present invention provides a gallium nitride-based semiconductor laser element, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer, wherein a Floquet transient energy band control layer is provided between the active layer and the lower waveguide layer; the In element distribution of the Floquet transient energy band control layer has a function y=ax 2 +bx+c(a>0) curve distribution; the In / C element ratio distribution of the Floquet instantaneous energy band control layer has a function y=dx 2 +ex+f(d>0) curve distribution; the In / H element ratio distribution of the Floquet instantaneous energy band control layer has the function y=A+B*e x / cosx first and second quadrant curve distribution; the In / O element ratio distribution of the Floquet instantaneous energy band control layer has a function y=C+x 2 +e xCurve distribution, wherein A, B, and C are arbitrary values, and A≤C≤d≤a; the In element of the Floquet instantaneous energy band regulation layer ≤ the In element of the lower waveguide layer ≤ the In element of the active layer; the In / C element ratio of the Floquet instantaneous energy band regulation layer ≤ the In / C element ratio of the lower waveguide layer ≤ the In / C element ratio of the active layer; the In / H element ratio of the Floquet instantaneous energy band regulation layer ≤ the In / H element ratio of the lower waveguide layer ≤ the In / H element ratio of the active layer; the In / O element ratio of the Floquet instantaneous energy band regulation layer ≤ the In / O element ratio of the lower waveguide layer ≤ the In / O element ratio of the active layer.

[0012] Preferably, the breakdown field intensity distribution of the Floquet transient energy band control layer has a function y=D+E*sinx / e x Curve distribution, wherein D and E are arbitrary values; the breakdown field strength of the Floquet instantaneous energy band regulation layer ≤ the breakdown field strength of the lower waveguide layer ≤ the breakdown field strength of the active layer.

[0013] Preferably, the conduction band effective state density distribution of the Floquet transient band regulation layer has a function y=F+G*e x sinx curve distribution, wherein F and G are arbitrary values; the breakdown field strength of the Floquet instantaneous energy band regulation layer ≥ the breakdown field strength of the lower waveguide layer ≥ the breakdown field strength of the active layer.

[0014] Preferably, the piezoelectric polarization coefficient distribution of the Floquet transient energy band control layer has a function y=H+x 2 +J*sinx curve distribution, where H and J are arbitrary values; the piezoelectric polarization coefficient of the Floquet instantaneous energy band regulation layer ≥ the piezoelectric polarization coefficient of the lower waveguide layer ≥ the piezoelectric polarization coefficient of the active layer.

[0015] Preferably, the lattice constant distribution of the Floquet transient energy band control layer has a function y=K+x 2 +L*e x Curve distribution, wherein K and L are arbitrary values; the lattice constant of the Floquet instantaneous energy band regulation layer ≤ the lattice constant of the lower waveguide layer ≤ the lattice constant of the active layer.

[0016] Preferably, the breakdown field strength distribution, conduction band effective state density distribution, piezoelectric polarization coefficient distribution, and lattice constant distribution of the Floquet transient energy band regulation layer have the following relationship: H≤K≤D≤F.

[0017] Preferably, the Floquet transient band control layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, Mn3O4, LaBr2, La2Br5, Sc7Cl 10 , Bi2LiN or any combination thereof.

[0018] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0019] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0020] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0021] Compared with the prior art, the gallium nitride-based semiconductor laser element provided by the embodiment of the present invention has the following beneficial effects: the Floquet instantaneous band control layer constructs an electronic band with periodic arrangement in momentum space, controls the band structure, symmetry and topological structure of electrons and periodic potential fields on an ultrafast time scale, thereby controlling quantum state changes and electronic structure changes, enhancing the coupling of light and pseudospin degrees of freedom and band renormalization to produce an instantaneous energy gap, controlling resonant and non-resonant laser pumping, enhancing the laser pumping efficiency of the active layer, improving the coupling rate from the pump energy level to the laser energy level, reducing heat loss and waste heat, and improving the uniformity of thermal expansion and thermal stress distribution. , suppress temperature quenching, laser breakage, thermal lens and stress birefringence problems, and induce the formation of specific optical selection rules and peculiar polarization selection effects to change the polarization state of the incident light, suppress the depolarization and distortion of the laser beam, and improve the far-field FFP image quality and beam quality factor of the laser; at the same time, in the strong coupling limit, the time-periodic light field is hybridized with the photon-decorated Floquet state, inducing the hybridization of Bloch state and Floquet state, regulating the symmetry breaking of the laser away from the equilibrium phase transition, reducing the capture effect, edge effect and deep energy level trap in the depletion region, and eliminating the problems of conductivity jump, capacitance sink and ideal factor jump. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic structural diagram of a gallium nitride-based semiconductor laser element according to an embodiment of the present invention;

[0023] Figure 2 is a SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor laser element according to an embodiment of the present invention;

[0024] Reference numerals: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: upper confinement layer, 106: Floquet transient band control layer. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] In order to solve the above problems, a gallium nitride-based semiconductor laser element provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0027] Reference Figure 1-2 The present invention provides a gallium nitride-based semiconductor laser element, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A Floquet instantaneous energy band control layer 106 is provided between the active layer 103 and the lower waveguide layer 102; the In element distribution of the Floquet instantaneous energy band control layer 106 has a function y=ax 2 +bx+c(a>0) curve distribution; the In / C element ratio distribution of the Floquet transient energy band control layer 106 has a function y=dx 2 +ex+f(d>0) curve distribution; the In / H element ratio distribution of the Floquet transient energy band control layer 106 has a function y=A+B*e x / cosx first two quadrant curve distribution; the In / O element ratio distribution of the Floquet transient energy band control layer 106 has a function y=C+x 2 +e x Curve distribution, wherein A, B, and C are arbitrary values, and A≤C≤d≤a; the In element of the Floquet instantaneous energy band regulation layer 106 ≤ the In element of the lower waveguide layer 102 ≤ the In element of the active layer 103; the In / C element ratio of the Floquet instantaneous energy band regulation layer 106 ≤ the In / C element ratio of the lower waveguide layer 102 ≤ the In / C element ratio of the active layer 103; the In / H element ratio of the Floquet instantaneous energy band regulation layer 106 ≤ the In / H element ratio of the lower waveguide layer 102 ≤ the In / H element ratio of the active layer 103; the In / O element ratio of the Floquet instantaneous energy band regulation layer 106 ≤ the In / O element ratio of the lower waveguide layer 102 ≤ the In / O element ratio of the active layer 103.

[0028] The breakdown field intensity distribution of the Floquet transient energy band control layer 106 has a function y=D+E*sinx / e x Curve distribution, where D and E are arbitrary values; the breakdown field strength of the Floquet instantaneous energy band regulation layer 106 ≤ the breakdown field strength of the lower waveguide layer 102 ≤ the breakdown field strength of the active layer 103 .

[0029] The conduction band effective state density distribution of the Floquet transient energy band control layer 106 has a function y=F+G*e x sinx curve distribution, where F and G are arbitrary values; the breakdown field strength of the Floquet instantaneous energy band regulation layer 106 ≥ the breakdown field strength of the lower waveguide layer 102 ≥ the breakdown field strength of the active layer 103 .

[0030] The piezoelectric polarization coefficient distribution of the Floquet transient energy band control layer 106 has a function y=H+x 2 +J*sinx curve distribution, where H and J are arbitrary values; the piezoelectric polarization coefficient of the Floquet instantaneous energy band regulation layer 106 ≥ the piezoelectric polarization coefficient of the lower waveguide layer 102 ≥ the piezoelectric polarization coefficient of the active layer 103.

[0031] The lattice constant distribution of the Floquet transient energy band control layer 106 has a function y=K+x 2 +L*e x Curve distribution, wherein K and L are arbitrary values; the lattice constant of the Floquet transient energy band regulation layer 106 ≤ the lattice constant of the lower waveguide layer 102 ≤ the lattice constant of the active layer 103.

[0032] The breakdown field intensity distribution, conduction band effective state density distribution, piezoelectric polarization coefficient distribution, and lattice constant distribution of the Floquet transient energy band regulation layer 106 have the following relationship: H≤K≤D≤F.

[0033] The Floquet transient energy band control layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, Mn3O4, LaBr2, La2Br5, Sc7Cl 10 , Bi2LiN or any combination thereof.

[0034] The Floquet instantaneous energy band control layer 106 constructs an electronic energy band with periodic arrangement in momentum space, controls the energy band structure, symmetry and topological structure of electrons and periodic potential fields on an ultrafast time scale, and then controls quantum state changes and electronic structure changes, enhances the coupling of light and pseudospin freedom and energy band renormalization to produce an instantaneous energy gap, controls resonant and non-resonant laser pumping, enhances the laser pumping efficiency of the active layer, improves the coupling rate from the pump energy level to the laser energy level, reduces heat loss and waste heat, improves the uniformity of thermal expansion and thermal stress distribution, inhibits temperature quenching, laser breakage, thermal lensing and stress birefringence, and induces the formation of specific optical selection rules and peculiar polarization selection effects to change the polarization state of the incident light, inhibits the depolarization and distortion of the laser beam, and improves the far-field FFP image quality and beam quality factor of the laser. As shown in the following table:

[0035] Blue Laser Project Conventional laser Laser of the present invention Range of change <![CDATA[Beam quality factor M 2 > 3.7 1.16 219％ Optical power(W) 5.2 13.5 160％ Temperature quenching ratio (PPM) 127 13 -90％ Laser breakage ratio (PPM) 89 6 -93％

[0036] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0037] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0038] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0039] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A gallium nitride-based semiconductor laser element, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A Floquet instantaneous energy band regulating layer (106) is provided between the active layer (103) and the lower waveguide layer (102); the In element distribution of the Floquet instantaneous energy band regulating layer (106) has a function y=ax 2 +bx+c(a>0) curve distribution; the In / C element ratio distribution of the Floquet instantaneous energy band control layer (106) has a function y=dx 2 +ex+f(d>0) curve distribution; the In / H element ratio distribution of the Floquet instantaneous energy band control layer (106) has a function y=A+B*e x / cosx first two quadrant curve distribution; the In / O element ratio distribution of the Floquet instantaneous energy band control layer (106) has a function y=C+x 2 +e x The invention discloses a curve distribution, wherein A, B, and C are arbitrary values, and A≤C≤d≤a; the In element of the Floquet instantaneous energy band regulation layer (106) is ≤ the In element of the lower waveguide layer (102) ≤ the In element of the active layer (103); the In / C element ratio of the Floquet instantaneous energy band regulation layer (106) is ≤ the In / C element ratio of the lower waveguide layer (102) ≤ the In / C element ratio of the active layer (103); the In / H element ratio of the Floquet instantaneous energy band regulation layer (106) is ≤ the In / H element ratio of the lower waveguide layer (102) ≤ the In / H element ratio of the active layer (103); the In / O element ratio of the Floquet instantaneous energy band regulation layer (106) is ≤ the In / O element ratio of the lower waveguide layer (102) ≤ the In / O element ratio of the active layer (103).

2. A gallium nitride-based semiconductor laser element according to claim 1, characterized in that: The breakdown field intensity distribution of the Floquet transient energy band control layer (106) has a function y=D+E*sinx / e x Curve distribution, wherein D and E are arbitrary values; the breakdown field strength of the Floquet instantaneous energy band regulation layer (106) ≤ the breakdown field strength of the lower waveguide layer (102) ≤ the breakdown field strength of the active layer (103).

3. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The conduction band effective state density distribution of the Floquet transient energy band control layer (106) has a function y=F+G*e x sinx curve distribution, wherein F and G are arbitrary values; the breakdown field strength of the Floquet instantaneous energy band regulation layer (106) ≥ the breakdown field strength of the lower waveguide layer (102) ≥ the breakdown field strength of the active layer (103).

4. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that: The piezoelectric polarization coefficient distribution of the Floquet transient energy band control layer (106) has a function y=H+x 2 +J*sinx curve distribution, wherein H and J are arbitrary values; the piezoelectric polarization coefficient of the Floquet instantaneous energy band regulation layer (106) is greater than or equal to the piezoelectric polarization coefficient of the lower waveguide layer (102) and greater than or equal to the piezoelectric polarization coefficient of the active layer (103).

5. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The lattice constant distribution of the Floquet transient energy band control layer (106) has a function y=K+x 2 +L*e x Curve distribution, wherein K and L are arbitrary values; the lattice constant of the Floquet instantaneous energy band regulation layer (106) ≤ the lattice constant of the lower waveguide layer (102) ≤ the lattice constant of the active layer (103).

6. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The breakdown field intensity distribution, conduction band effective state density distribution, piezoelectric polarization coefficient distribution and lattice constant distribution of the Floquet transient energy band regulation layer (106) have the following relationship: H≤K≤D≤F.

7. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The Floquet transient energy band control layer (106) is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, Mn3O4, LaBr2, La2Br5, Sc7Cl 10 , Bi2LiN or any combination thereof.

8. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

9. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

10. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

Images