Substrate bonding apparatus and substrate bonding method
By using the lower side plate and lift pin support substrate in the substrate bonding device, and positioning with the support member and alignment mechanism, the problems of functional surface damage and foreign matter during the alignment process in the prior art are solved, and high Quality substrate bonding.
Patent Information
- Application Number
- CN202380041576.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-03-29
- Filing Date
- 2023-03-16
- Publication Date
- 2024-12-31
AI Technical Summary
During the alignment process, existing substrate bonding devices are prone to damage to the functional surface, foreign matters and chip scattering, affecting the bonding quality.
The lower side plate and the lift pin support substrate are used, and positioned through the support member and the alignment mechanism to avoid direct contact of the functional surface, and the substrate is bonded by the adsorption pad and the push pin.
It effectively suppresses damage to the functional surface of the substrate and the generation of foreign matter, and improves the quality and stability of substrate bonding.
Smart Images
Figure CN119234293A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a substrate laminating device and a substrate laminating method. Background Art
[0002] A substrate bonding device for bonding a plurality of substrates in an overlapping state is known. As such a substrate bonding device, the following structure is disclosed: a first wafer is placed on a second wafer held on a worktable, and a pressure is applied to the first wafer by a pressure mechanism, thereby pressurizing and bonding the first wafer and the second wafer (for example, refer to Patent Document 1).
[0003] Prior art literature
[0004] Patent Literature
[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-301593 Summary of the invention
[0006] Problems to be solved by the invention
[0007] In the substrate bonding device disclosed in Patent Document 1, the first wafer and the second wafer are aligned before being press-bonded. At this time, the alignment is performed using an alignment mechanism while the first wafer and the second wafer are supported from below by a supporting member. In this way, in the case of the first wafer with the functional surface facing downward, when the first wafer is moved for alignment, the supporting member rubs against the functional surface, which sometimes causes damage to the functional surface, generation of foreign matter, chip scattering, etc.
[0008] An object of the present invention is to provide a substrate bonding device and a substrate bonding method which can bond substrates to each other with good quality while suppressing damage to functional surfaces of substrates, generation of foreign matter, chip scattering, etc. during substrate alignment.
[0009] Means for solving problems
[0010] In a first aspect of the present invention, a substrate bonding device is provided, which bonds two substrates, and the substrate bonding device comprises: a lower plate on the lower side; lifting pins, which are provided on the lower plate and support the substrate to be moved in and lift it up and down; a holding portion, which receives and holds the previously moved in substrate from the lifting pins; an upper pressing portion, which is arranged above the lower plate and can abut against the upper surface side of the upper substrate of the two substrates to be bonded; a supporting member, which is provided on the lower plate and abuts against the outer peripheral portion of the lower surface of the substrate to support the substrate when the lifting pins are lowered; and an alignment mechanism, which positions the substrate by clamping the substrate supported by the supporting member in a direction along the surface of the substrate.
[0011] In a second embodiment of the present invention, a substrate bonding method is provided, which is a method for bonding two substrates, and the substrate bonding method includes the following steps: supporting a moved-in substrate by lifting pins; transferring the substrate from the lifting pins to a supporting member abutting against the outer peripheral portion of the lower surface of the substrate and supporting the substrate by the supporting member; and positioning the substrate by clamping the substrate supported by the supporting member in a direction along the surface of the substrate.
[0012] Effects of the Invention
[0013] According to the aspect of the present invention, since the functional surfaces of the substrates are not contacted when aligning the substrates, it is possible to bond the substrates to each other with good quality by suppressing damage to the functional surfaces of the substrates and generation of foreign matter. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 It is a figure which shows an example of the substrate bonding apparatus of 1st Embodiment.
[0015] Figure 2 This is a diagram of the upper substrate viewed from below.
[0016] Figure 3 It is a cross-sectional view of the upper substrate.
[0017] Figure 4 This is a top view of the lower side panel as seen from above.
[0018] Figure 5 yes Figure 4 AA section view.
[0019] Figure 6 This is a flowchart showing an example of the substrate bonding method according to the embodiment.
[0020] Figure 7 It means next Figure 6 A flowchart of an example of a substrate bonding method according to an embodiment of the present invention.
[0021] Figure 8 This figure shows an example of the operation of the substrate bonding apparatus, in which an upper substrate is carried into the chamber and supported by lift pins.
[0022] Fig. 9 This figure shows an example of the operation of the substrate bonding apparatus, in which an upper substrate is placed on a supporting member.
[0023] Fig.10 This figure shows an example of the operation of the substrate bonding apparatus, in which an alignment operation is performed on the upper substrate.
[0024] Fig.11This is a diagram showing an example of the operation of the substrate bonding apparatus, in which an upper substrate is held by a holding portion (adsorption pad).
[0025] Fig.12 This figure shows an example of the operation of the substrate bonding apparatus, in which a lower substrate is carried into a chamber and supported by lift pins.
[0026] Fig.13 This figure shows an example of the operation of the substrate bonding apparatus, in which a warpage suppression baking process is performed on the lower substrate.
[0027] Fig.14 This is a diagram showing an example of the operation of the substrate bonding apparatus, in which a lower substrate is supported by a lower plate.
[0028] Fig.15 This figure shows an example of the operation of the substrate bonding apparatus, in which an alignment operation is performed on a lower substrate.
[0029] Fig.16 This figure shows an example of the operation of the substrate bonding apparatus, in which the lift pins are raised to bond the upper substrate and the lower substrate together.
[0030] Fig.17 This figure shows an example of the operation of the substrate bonding apparatus, in which the lift pins are lowered after the holding of the holding portion is released, thereby lowering the upper substrate and the lower substrate after bonding.
[0031] Fig.18 This figure shows an example of the operation of the substrate bonding apparatus, in which the upper substrate and the lower substrate after bonding are transferred from the lift pins to the arm.
[0032] Fig.19 It is a figure which shows an example of the substrate bonding apparatus of 2nd Embodiment.
[0033] Fig. 20 This is a flowchart showing another example of the substrate bonding method according to the embodiment.
[0034] Fig.21 It means next Figure 7 A flowchart of another example of a substrate bonding method according to an embodiment of the present invention.
[0035] Fig. 22 This figure shows an example of the operation of the substrate bonding apparatus, in which an upper substrate is carried into the chamber and supported by lift pins.
[0036] Fig.23 This figure shows an example of the operation of the substrate bonding apparatus, in which an upper substrate is placed on a supporting member.
[0037] Fig.24 This figure shows an example of the operation of the substrate bonding apparatus, in which an alignment operation is performed on the upper substrate.
[0038] Fig.25 This is a diagram showing an example of the operation of the substrate bonding apparatus, in which an upper substrate is held by a holding portion (spacer).
[0039] Fig.26 This figure shows an example of the operation of the substrate bonding apparatus, in which a lower substrate is carried into a chamber and supported by lift pins.
[0040] Fig. 27 This figure shows an example of the operation of the substrate bonding apparatus, in which a warpage suppression baking process is performed on the lower substrate.
[0041] Fig.28 This is a diagram showing an example of the operation of the substrate bonding apparatus, in which a lower substrate is supported by a lower plate.
[0042] Fig.29 This figure shows an example of the operation of the substrate bonding apparatus, in which an alignment operation is performed on a lower substrate.
[0043] Fig.30 This figure shows an example of the operation of the substrate bonding apparatus, in which the upper substrate and the lower substrate are bonded together by lowering the upper pressing portion and pressing the upper substrate with the pressing pins.
[0044] Fig.31 This is a diagram showing an example of the operation of the substrate bonding apparatus, in which the spacer is retracted.
[0045] Fig.32 This figure shows an example of the operation of the substrate bonding apparatus, in which the lift pins are lowered to lower the upper substrate and the lower substrate after bonding.
[0046] Fig.33 This figure shows an example of the operation of the substrate bonding apparatus, in which the upper substrate and the lower substrate after bonding are transferred from the lift pins to the arm. DETAILED DESCRIPTION
[0047] Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the following description. In addition, in the accompanying drawings, in order to easily understand the embodiments, there are parts that are omitted to express. Moreover, a part is expressed by appropriately changing the scale such as enlarging or emphasizing a part, and sometimes the size and shape are different from the actual product. In the following figures, the XYZ orthogonal coordinate system is used to illustrate the directions in the figures. In the XYZ orthogonal coordinate system, the plane parallel to the horizontal plane is set to the XY plane. In the XY plane, the direction parallel to the conveying direction of the substrate S1 and the substrate S2 is set to the X direction, and the direction orthogonal to the X direction is set to the Y direction. In addition, the direction perpendicular to the XY plane is recorded as the Z direction (height direction). The X direction, the Y direction, and the Z direction are respectively described with the direction indicated by the arrows in the figure as the + direction and the direction opposite to the direction indicated by the arrows as the - direction. [First embodiment]
[0048] <Substrate bonding device>
[0049] The substrate bonding apparatus 100 according to the first embodiment will be described. Figure 1 1 is a diagram showing an example of a substrate bonding apparatus 100 according to the first embodiment. The substrate bonding apparatus 100 bonds a substrate S1 formed with an adhesive layer F and a substrate S2 formed with an adhesive layer F in a manner that the adhesive layers F abut against each other. In addition, the adhesive layer F is not limited to being formed on both the substrate S1 and the substrate S2, and may be formed on either the substrate S1 or the substrate S2. The adhesive layer F is formed by coating and drying the substrates S1 and S2, for example, using a coating device, before being carried into the substrate bonding apparatus 100. In addition, the coating device may also be provided in the substrate bonding apparatus 100.
[0050] In this embodiment, the upper substrate of the two attached substrates is called substrate S1, and the lower substrate is called substrate S2. Substrate S1 and substrate S2 are, for example, glass substrates, semiconductor substrates, resin substrates, etc. In this embodiment, for example, the upper substrate S1 is a glass substrate, and the lower substrate S2 is a silicon substrate. In addition, the state after the substrate S1 and the substrate S2 are attached is called substrate S (refer to Fig.18 ). Both the substrate S1 and the substrate S2 are circular substrates that are circular when viewed from above (viewed from the Z direction), but are not limited to circular substrates, and may be square substrates that are rectangular (square, rectangular) when viewed from above, elliptical, oblong, etc. substrates.
[0051] Figure 2 This is a diagram of the upper substrate S1 as viewed from below. Figure 3 is a cross-sectional view of the upper substrate S1. Figure 2 , Figure 3As shown, on the upper side of the substrate S1, a lower surface outer peripheral portion F1 and a lower surface inner peripheral portion F2 are formed on the lower surface facing the lower side when the substrate S1 is moved into the chamber 10. The lower surface inner peripheral portion F2 is formed on the inner peripheral side of the lower surface of the substrate S1. The lower surface outer peripheral portion F1 is formed on the outer peripheral side of the lower surface inner peripheral portion F2. When viewed from below, the lower surface outer peripheral portion F1 is formed in an annular area continuous along the outer peripheral portion of the lower surface of the substrate S1. In the case where the functional area Af of the substrate S1 faces downward, the functional area Af is formed in the lower surface inner peripheral portion F2. When components such as semiconductor chips are mounted on the lower surface of the substrate S1 by adhesives or the like, the area where the components are mounted forms the functional area Af. When an adhesive layer F is formed on the substrate S1, the adhesive layer F forms the functional area Af.
[0052] like Figure 1 As shown, the substrate bonding apparatus 100 includes a chamber 10 , a lower plate 20 , an upper pressing portion 30A, a lifting portion 40 , a shaft portion 51 , an alignment mechanism 60 , and a control portion C. The control portion C controls the operation of each portion of the substrate bonding apparatus 100 in a centralized manner.
[0053] In the substrate bonding device 100, in order to bond the substrates S1 and S2, first, the substrate S1 is moved into the chamber 10, and after being aligned by the alignment mechanism 60, the substrate S1 is raised by the lifting part 40, and is held by the holding part, that is, the adsorption pad 32, of the upper pressing part 30A. In addition, the adsorption pad 32 will be described later. Then, the substrate S2 is moved into the chamber 10, and after being aligned by the alignment mechanism 60, the substrate S2 is raised by the lifting part 40, and bonded to the substrate S1 held on the adsorption pad 32. When the substrate S1 is moved into the chamber 10, the substrate S1 is transported in a state where the functional area Af faces downward (-Z direction). In addition, when the substrate S2 is moved into the chamber 10, the substrate S2 is moved in in a state where the adhesive layer F faces upward (+Z direction).
[0054] The chamber 10 is arranged on the base 15 of the substrate bonding device 100. The chamber 10 is formed into a box shape having a side wall 10a rising upward from the outer periphery of the base 15 and a top plate 10b covering the upper part of the side wall 10a. The chamber 10 accommodates the lower plate 20, the upper pressing portion 30A, the lifting portion 40, a part of the shaft portion 51, the alignment mechanism 60 and the upper pressing portion 30A. The chamber 10 is formed into a box shape and has an opening 11 in a part of the side wall 10a. The opening 11 is formed on the -X side surface of the chamber 10 so that the inside of the chamber 10 is connected to the outside. The opening 11 is formed to be able to be held by the conveying device 90 (refer to Figure 8 The dimensions through which the substrates S1 and S2 of (B) are bonded together are passed.
[0055] The substrates S1 and S2 are respectively carried into the chamber 10 by the arm 91 of the conveying device 90 through the opening 11. In addition, the substrate S is carried out from the chamber 10 through the opening 11. In the present embodiment, the conveying device 90 has two flat-plate-shaped arms 91, and when the substrate S1 is carried into the chamber 10, the substrate S1 is held by suction from the upper side of the substrate S1, and when the substrate S2 is carried in and when the substrate S is carried out from the chamber 10, the substrates S2 and S are held by suction from the lower side of the substrates S2 and S. In addition, the arm 91 may be a mode in which the substrates S2 and S are not sucked when conveying the substrates S2 and S, but are placed and held on the upper surface side of the arm 91. In addition, the arm 91 is not limited to two, and may be three or more.
[0056] The chamber 10 is provided with a gate valve 12 for opening and closing the opening 11. The gate valve 12 is arranged on the outer side of the side surface of the chamber 10 on the -X side, and can slide in the up and down direction (Z direction) by a driving unit not shown in the figure. The gate valve 12 opens and closes the opening 11 by sliding. In addition, even if the opening 11 is closed by the gate valve 12, the chamber 10 is in a state open to the atmosphere. In addition, the chamber 10 can be made into a sealed state by closing the opening 11, so that the chamber 10 has a vacuum atmosphere. In addition, a through portion 10h is provided on the upper surface of the chamber 10 for the shaft portion 51 described later to pass through. The shaft portion 51 is inserted into the through portion 10h. In addition, the shaft portion 51 can also be arranged to be able to rise and fall.
[0057] In addition, it is arbitrary whether the substrate bonding device 100 includes the chamber 10, and it can also be a mode without the chamber 10 (atmospheric open type). When the chamber 10 is made into a vacuum atmosphere, the chamber 10 is connected to a suction device not shown in the figure. By using the suction device to suck (exhaust) the chamber 10, the chamber 10 can be made into a vacuum atmosphere. Moreover, the chamber 10 can also be provided with a valve that can be opened to the outside in order to open the internal vacuum atmosphere. In addition, the chamber 10 can also be connected to a gas supply device not shown in the figure. By supplying a prescribed gas from the gas supply device to the chamber 10, the chamber 10 can be made into a prescribed gas atmosphere. As the prescribed gas, for example, a gas that is inactive with respect to the thin film formed on the substrates S1, S2, etc., or dry air, etc., is used.
[0058] The lower plate 20 supports the substrates S1 and S2 carried into the chamber 10 from below. The lower plate 20 is circular when viewed from above, but is not limited to this form, and may be rectangular (square, rectangular), elliptical, or oblong, for example. The lower plate 20 is set to have a larger outer diameter than the substrates S1 and S2.
[0059] The lower plate 20 includes a support plate 21, a heater (heating unit) 22, and a bottom plate 23. The support plate 21, the heater 22, and the bottom plate 23 are stacked in sequence from the lower side (-Z side). The lower plate 20 is supported by a plurality of pillars 24 provided on the lower surface side of the support plate 21. The support plate 21 and the heater 22, and the heater 22 and the bottom plate 23 are fixed by fastening members such as bolts. A plurality of through holes 20a for the lifting pins 41 of the lifting unit 40 described later to pass through are provided in the support plate 21, the heater 22, and the bottom plate 23 in the up-down direction. In addition, whether or not to provide the heater (heating unit) 22 is arbitrary, and the lower plate 20 may also be provided without the heater (heating unit) 22.
[0060] The support plate 21 is a plate-like body formed of a material such as metal, resin, ceramic, etc. The heater 22 is an example of a heating unit, for example, a heating plate having a heating mechanism (heat source) such as a heating wire inside. The heater 22 is used to heat the substrates S1 and S2 via the bottom plate 23. In addition, the heater 22 can also be a stacked structure stacked with a sheet-like heat source. The bottom plate 23 is configured with substrates S1, S2 and substrate S on the side of the upper surface 23f on the +Z side. The bottom plate 23 is a plate-like body formed of ceramics, but can also be formed of metal, resin, etc. The upper surface 23f of the bottom plate 23 can also be a surface in contact with the substrate S2. Therefore, the upper surface 23f preferably has a high flatness and a small surface roughness (or is a mirror surface).
[0061] A plurality of pillars 24 are provided on the lower surface of the support plate 21. The plurality of pillars 24 are used to support the lower plate 20 on the base 15 at the bottom of the chamber 10. The number and arrangement of the pillars 24 are not limited to the above-described embodiment, and any structure capable of supporting the lower plate 20 may be applied.
[0062] like Figure 1 As shown, the upper pressing portion 30A presses the upper substrate S1 toward the substrate S2 side (lower plate 20 side) when attaching the substrate S1 and the substrate S2. The upper pressing portion 30A includes a base 31 provided at the lower portion of the shaft portion 51 and an adsorption pad (holding portion) 32 provided on the lower surface side of the base 31. The base 31 and the adsorption pad 32 are, for example, circular when viewed from above, but are not limited to this form, and may be, for example, rectangular (square, rectangular), elliptical, oblong, etc. The base 31 and the adsorption pad 32 are set to have an outer diameter dimension smaller than that of the substrates S1 and S2. In addition, the outer diameter dimensions of the base 31 and the adsorption pad 32 can be set arbitrarily.
[0063] The upper pressing portion 30A is provided at the lower end of the shaft portion 51, and its position is fixed in the up-down direction. However, in the case where the shaft portion 51 can be raised and lowered, the upper pressing portion 30A can also be raised and lowered integrally with the shaft portion 51. The adsorption pad 32 uses the lower surface as the adsorption surface 32a, and can adsorb the upper surface of the substrate S1 that is supported and raised by the lifting pin 41 to hold the substrate S1. The adsorption pad 32 is fixed to the base 31 by a fastening member such as a bolt. The structure of the adsorption pad 32 is arbitrary, for example, a vacuum adsorption pad, an electrostatic adsorption pad, etc. can be used. In addition, the upper pressing portion 30A can also be a mode in which a heater (heating portion) is provided. In addition, instead of a mode in which the upper pressing portion 30A is provided with a heater, a mode in which a heater for heating the inside of the chamber 10 is provided can also be provided.
[0064] The lifting unit 40 is provided below the lower plate 20. The lifting unit 40 supports the substrates S1, S2, and S above the lower plate 20, and moves the substrates S1, S2, and S up and down. In order to align the substrates S1 and S2 carried into the chamber 10 by the alignment mechanism 60, the lifting unit 40 lowers the supported substrates S1 and S2 and places them on the lower plate 20. In order to make the adsorption pad 32 hold the substrate S1 aligned by the alignment mechanism 60, the lifting unit 40 raises the supported substrate S1. In order to attach the substrate S2 aligned by the alignment mechanism 60 to the substrate S1, the lifting unit 40 raises the substrate S2.
[0065] The lifting part 40 has a plurality of lifting pins 41, a moving part 42 connected to the lower ends of the lifting pins 41 and raised and lowered in the Z direction, and a lifting pin driving part 43 that raises and lowers the moving part 42. The plurality of lifting pins 41 are arranged at the central part of the lower plate 20. The plurality of lifting pins 41 support the substrates S1 and S2 by abutting against the central parts of the substrates S1 and S2 from below. When the functional area Af of the substrate S1 faces downward, the lifting pins 41 abut against the functional area Af to support the substrate S1. In addition, after the substrates S1 and S2 are placed on the lower plate 20, the upper ends of the lifting pins 41 are in non-contact with the substrates S1 and S2.
[0066] Figure 4 This is a top view of the lower side plate 20 as viewed from above. Figure 4 As shown, the lifting pins 41 are respectively arranged to penetrate through the plurality of through holes 20a provided in the lower plate 20. The upper ends of the plurality of lifting pins 41 are aligned at the same or substantially the same height. The lifting pins 41 may be formed of a non-conductive material (such as resin, metal, ceramic, etc.).
[0067] The moving part 42 is raised and lowered by driving the lift pin driving part 43. The plurality of lift pins 41 are raised and lowered simultaneously with the raising and lowering of the moving part 42. The lift pin driving part 43 uses, for example, an electric rotary motor, a linear motor, a cylinder device, a hydraulic cylinder device, etc., and transmits the driving force to the moving part 42 through a transmission mechanism (not shown).
[0068] The alignment mechanism 60 positions the substrates S1 and S2 relative to the lower plate 20. Figure 1 , Figure 4 As shown, the alignment mechanism 60 includes a plurality of alignment drive parts 61 and a plurality of alignment blocks 62. The alignment blocks 62 are used to align (position) the substrates S1 and S2 by clamping the substrates S1 and S2 from the radial direction. The plurality of alignment blocks 62 are arranged at intervals on the outer periphery of the bottom plate 23 of the lower plate 20 in the circumferential direction around the center axis AX of the lower plate 20. For example, five of the plurality of alignment blocks 62 are arranged at intervals in the circumferential direction around the center axis AX. The plurality of alignment blocks 62 can be moved in the direction along the surface of the substrates S1 and S2 respectively by guide members not shown in the figure. In order to prevent the substrates S1 and S2 from being charged, the alignment blocks 62 are preferably formed of a conductive material.
[0069] The alignment drive unit 61 moves each of the plurality of alignment blocks 62 in the radial direction of the base plate 23. The alignment drive unit 61 includes a drive source such as a cylinder device or an electric motor and a transmission mechanism for transmitting the drive force generated by the drive source to each of the alignment blocks 62.
[0070] The alignment mechanism 60 drives the alignment drive 61 to move the alignment block 62 forward in the radial direction of the bottom plate 23, and presses the outer peripheral edges of the substrates S1 and S2 in a direction parallel to the upper surface 23f of the bottom plate 23, thereby sandwiching the substrates S1 and S2. The alignment mechanism 60 drives the alignment drive 61 to move the alignment block 62 forward and backward in the radial direction of the bottom plate 23, thereby positioning the substrates S1 and S2 relative to the lower plate 20 and the upper pressing portion 30A.
[0071] The operation of the alignment mechanism 60 is controlled by the control unit C. When the alignment block 62 is used, the control unit C reads the shapes of the substrates S1 and S2 obtained by other units not shown, determines the alignment positions of the substrates S1 and S2, and then operates the alignment block 62. In addition, as long as the alignment mechanism 60 can achieve the required function, its specific structure is not limited and can be appropriately changed to other structures. For example, in Figure 4In the embodiment, the two upper alignment mechanisms 60 of the five alignment mechanisms 60 may be configured as fixed types, and the three lower alignment mechanisms 60 may be configured as movable types that can move forward and backward. In this case, the three movable alignment mechanisms 60 drive the alignment drive unit 61 to move the alignment blocks 62 forward, and press the outer peripheries of the substrates S1 and S2 toward the direction of the two fixed alignment mechanisms 60, thereby performing alignment. In addition, in the alignment mechanism 60, the number of movable or fixed alignment blocks 62 can be appropriately set.
[0072] Figure 5 yes Figure 4 AA section view. Figure 4 , Figure 5 As shown in FIG. 1 , the lower plate 20 includes a support member 80. The support member 80 supports the lower surface outer peripheral portion F1 of the substrate S1 from below when the substrate S1 is positioned by the alignment mechanism 60. Figure 5 As shown, when the substrate S1 with the functional area Af facing downward is received by the lift pins 41 , the plurality of pins 81 abut against the lower surface outer peripheral portion F1 outside the functional area Af to support the substrate S1 . The support member 80 is provided on the bottom plate 23 of the lower plate 20 .
[0073] When the lifting pins 41 supporting the substrates S1 and S2 are lowered, the supporting member 80 abuts against the outer peripheral portion F1 of the lower surface of the substrate S1 to support the substrate S1. The supporting member 80 is provided at three or more locations spaced apart in the circumferential direction of the lower plate 20. The supporting member 80 is provided at four locations spaced apart in the circumferential direction of the lower plate 20, for example. The supporting member 80 is, for example, a pin 81 protruding from the upper surface of the lower plate 20. By making the pin 81 abut against the outer peripheral portion F1 of the lower surface of the substrates S1 and S2, the substrates S1 and S2 can be stably supported with a simple structure.
[0074] The top of the pin 81 is hemispherical in shape, with the outer diameter gradually decreasing upward. By making the top of the pin 81 hemispherical, the top of the pin 81 can be brought into contact with the outer peripheral portion F1 of the lower surface of the substrate S1 through point contact. Therefore, when the substrate S1 is moved in a direction along the surface of the substrate S1 for positioning, the friction generated between the substrate S1 and the top of the pin 81 can be suppressed to a small level. In addition, the top of the pin 81 contacts the outer peripheral portion F1 of the lower surface, so that the functional area Af is not damaged, and the occurrence of chip scattering can be further avoided. In addition, the shape of the top of the pin 81 is not limited to a hemispherical shape, and can also be appropriately set to other shapes.
[0075] like Figure 4As shown, the plurality of alignment blocks 62 are arranged in a state of being staggered in the circumferential direction of the lower plate 20 relative to the plurality of pins 81. According to this structure, when the alignment mechanism 60 is used to position the substrates S1 and S2, when the plurality of alignment blocks 62 are moved forward and backward in the direction along the surface of the substrates S1 and S2 to sandwich the substrates S1 and S2, interference between the alignment blocks 62 and the pins 81 can be suppressed.
[0076] <Substrate bonding method>
[0077] Next, the substrate bonding method according to the present embodiment will be described. Figure 6 This is a flowchart showing an example of the substrate bonding method according to the present embodiment. Figure 7 It means next Figure 6 Flowchart of an example of the substrate bonding method of the present embodiment. The substrate bonding method is executed according to an instruction from the control unit C, for example. Figures 8 to 18 The following are process diagrams showing an example of the operation of the substrate bonding apparatus 100. In addition, in these process diagrams, the operation of each part is simplified to facilitate understanding. Figure 6 , Figure 7 The flowchart is described below.
[0078] First, the gate valve 12 of the chamber 10 is opened and the substrate is loaded (step S01). Figure 8 As shown, the control unit C drives the driving unit (not shown) to raise the gate valve 12 and open the opening 11. Next, the substrate S1 (upper substrate) is carried into the chamber 10. At this time, the control unit C raises the lift pins 41 to the delivery height of the substrate S1.
[0079] The arm 91 of the conveying device 90 enters the interior of the chamber 10 from the opening 11 in a state where the substrate S1 is held on the lower surface side, and the substrate S1 is arranged above the lifting pin 41. The arm 91 holds the substrate S1 by adsorption by a suction pad (not shown) or the like provided on the lower surface. Then, the control unit C lowers the arm 91 and transfers the substrate S1 from the arm 91 to the lifting pin 41 (step S02). The lifting pin 41 abuts against the central part of the inner peripheral part F2 of the lower surface of the substrate S1 from below. Then, the arm 91 withdraws from the chamber 10. In addition, in the case where the substrate S1 has an adhesive layer F, when the substrate S1 is moved into the chamber 10, the adhesive layer F becomes the lower side.
[0080] Then, if Fig. 9As shown, the control unit C lowers the lifting pins 41 supporting the substrate S1, and places the substrate S1 on the multiple supporting members 80 (pins 81) of the lower plate 20 (step S03). At this time, the lifting pins 41 are lowered to a position lower than the multiple supporting members 80 (i.e., the lower surface of the substrate S1), and the substrate S1 is supported by the multiple supporting members 80. According to this structure, the substrate S1 is in a non-contact state with the lifting pins 41, and is supported only by the multiple supporting members 80 that are in contact with the lower surface outer peripheral portion F1 from below. In addition, the substrate S1 can also be heated by the heater 22.
[0081] Next, the substrate S1 is aligned (step S04). Fig.10 As shown, the control unit C drives the alignment drive unit 61 to move each alignment block 62 toward the radial inner side, and the substrate is clamped by multiple alignment blocks 62, thereby positioning the substrate S1. At this time, the substrate S1 is supported by multiple support members 80 at the lower surface peripheral portion F1. Therefore, when the substrate S1 is positioned using multiple alignment blocks 62, if the substrate S1 is moved in a plane along the lower surface of the substrate S1, friction is generated between the multiple support members 80 and the lower surface peripheral portion F1 of the substrate S1. After the alignment action, the control unit C causes each alignment block 62 to retreat radially outward, and then causes the lifting pin 41 to rise, thereby configuring the substrate S1 at a position above the spacer 72.
[0082] Next, the substrate S1 is held by the adsorption pad 32 (step S05). Fig.11 As shown, the control unit C raises the lifting pins 41, receives the substrate S1 from the supporting member 80, raises the substrate S1, and makes the substrate S1 contact with the adsorption surface 32a of the adsorption pad 32 of the upper pressing part 30A. When the substrate S1 contacts, the control unit C drives the adsorption pad 32 to a state where it can adsorb in advance. As a result, the substrate S1 is held on the adsorption pad 32. Then, by lowering the lifting pins 41, the lifting pins 41 are separated from the substrate S1.
[0083] Next, the substrate S2 (lower substrate) is moved into the chamber 10 (step S06). Fig.12 As shown, the control unit C lowers the lifting pin 41 to the delivery height of the substrate S2. Then, the substrate S2 is moved into the chamber 10 by the arm 91 and arranged above the lifting pin 41. The arm 91 adsorbs and holds the substrate S2 on the lower surface side. Then, the control unit C lowers the arm 91 and delivers the substrate S2 from the arm 91 to the lifting pin 41. Then, the arm 91 withdraws from the chamber 10. In addition, when the substrate S2 is moved into the chamber 10, the adhesive layer F becomes the upper side.
[0084] Next, the gate valve 12 is closed, and a warpage suppression baking process is performed to suppress the warpage of the substrate S2 (step S07). Fig.13As shown, after closing the gate valve 12, the substrate S2 is heated by, for example, the heater 22 to perform a warpage suppression baking treatment. By baking the substrate S2, the shape of the substrate S2 can be stabilized and the warpage of the substrate S2 can be suppressed. The warpage suppression baking treatment is performed by maintaining the temperature in the chamber 10 at, for example, 150°C to 250°C. In addition, from the above-mentioned steps S02 to S07, even if the gate valve 12 is closed, it is performed in a state where the chamber 10 is open to the atmosphere. However, for example, in steps S03, S04, S07, etc., the chamber 10 can also be set to a vacuum atmosphere for the treatment.
[0085] Then, if Fig.14 As shown, the lifting pins 41 are lowered to place the substrate S2 on the lower plate 20. The lifting pins 41 are lowered to a position lower than the multiple supporting members 80, and the substrate S2 is supported only by the multiple supporting members 80. According to this structure, the substrate S2 is in non-contact with the lifting pins 41, and is supported by the multiple supporting members 80 that are in contact with the lower surface periphery F1 from below. Then, the substrate S2 can be heated by the heater 22, and a warpage suppression baking process can be performed in a state open to the atmosphere, or the warpage suppression baking process can be performed in a state where the chamber 10 is in a vacuum atmosphere. The warpage suppression baking process is performed by setting the temperature of the heater 22 to, for example, 150°C to 250°C.
[0086] Next, the substrate S2 is aligned (step S08). Fig.15 As shown, the control unit C drives the alignment drive unit 61 to move each alignment block 62 toward the radial inner side, and the substrate S2 is clamped by multiple alignment blocks 62, thereby positioning the substrate S2. At this time, the substrate S2 is supported by multiple supporting members 80 at the lower surface peripheral portion F1. Therefore, when the substrate S2 is moved in the plane along the lower surface of the substrate S2 in order to position the substrate S2 using multiple alignment blocks 62, friction is only generated between the multiple supporting members 80 and the lower surface peripheral portion F1 of the substrate S1. The alignment action of step S08 is the same as the alignment action of step S04. Therefore, the substrate S1 and the substrate S2 are positioned at approximately the same position when viewed from above.
[0087] Then, if Fig.16As shown, the control unit C raises the substrate S2 by raising the lifting pin 41, and the substrate S1 and the substrate S2 are bonded together (step S09). At this time, the suction pad 32 of the upper pressing part 30A presses the upper surface side of the substrate S1, and the substrate S2 is raised by the lifting pin 41 to overlap with the substrate S1, thereby bonding the substrate S1 and the substrate S2. In other words, the suction pad 32 functions as a holding part for holding the substrate S1, and also has the function of pressing the upper surface of the substrate S1 by contacting with the upper surface of the substrate S1. In step S09, the substrate S1 and the substrate S2 are bonded together by the adhesive layer F of the substrate S1 contacting with the adhesive layer F of the substrate S2. In addition, the force for bonding the substrate S1 and the substrate S2 is controlled by the force of the lifting pin 41. In addition, instead of raising the lifting pin 41, the upper pressing part 30A holding the substrate S1 may be lowered, or the lifting pin 41 may be raised and the upper pressing part 30A may be lowered.
[0088] Next, the adsorption pad 32 releases the adsorption of the substrate S1 (step S10). After the substrate S1 and the substrate S2 are bonded together, the control unit C releases the adsorption pad 32 from adsorbing the substrate S1. Fig.17 As shown, the lifting pin 41 is lowered to place the substrate S after the bonding is completed at a height for carrying out. Through this process, the substrate S is separated from both the lower plate 20 and the upper pressing part 30A. Next, the gate valve 12 is opened to carry the substrate S out of the chamber 10 (step S11). Fig.18 As shown, after the gate valve 12 is raised to open the opening 11, the arm 91 of the conveying device 90 is made to enter the interior of the chamber 10 from the opening 11, and the arm 91 is arranged below the substrate S supported by the lifting pins 41. Then, the control unit C raises the arm 91, so that the substrate S is adsorbed and held on the upper surface of the arm 91, thereby transferring the substrate S from the lifting pins 41 to the arm 91. In addition, the arm 91 may be placed and held on the upper surface of the arm 91 without adsorbing and holding the substrate S. Then, the arm 91 withdraws from the chamber 10, and the substrate S is carried out to the outside of the chamber 10. Then, the control unit C closes the gate valve 12, and a series of processes are terminated. [Second Embodiment]
[0089] <Substrate bonding device>
[0090] A substrate bonding apparatus 200 according to the second embodiment will be described. Fig.19 2 is a diagram showing an example of a substrate bonding apparatus 200 according to the second embodiment. Fig.19 In the following figures, the same reference numerals are used for the same structures as those in the first embodiment, and their descriptions are omitted or simplified. The substrate bonding apparatus 200 bonds the substrate S1 formed with the adhesive layer F and the substrate S2 formed with the adhesive layer F so that the adhesive layers F of the substrate S1 and the substrate S2 are in contact with each other. Fig.19As shown, the substrate bonding apparatus 200 includes a chamber 10 , a lower plate 20 , an upper pressing portion 30B, a lifting portion 40 , a lifting mechanism 50 , an alignment mechanism 60 , a spacer mechanism 70 , and a control portion C. The control portion C controls the operation of each portion of the substrate bonding apparatus 200 .
[0091] In the substrate bonding apparatus 200, in order to bond the substrates S1 and S2, first, the substrate S1 is carried into the chamber 10, and after being aligned by the alignment mechanism 60, the substrate S1 is raised by the lifting part 40 and held by the spacer mechanism 70. Then, the substrate S2 is carried into the chamber 10, and after being aligned by the alignment mechanism 60, the substrate S2 is raised by the lifting part 40 and bonded to the substrate S1 held by the spacer mechanism 70. The chamber 10 accommodates the lower plate 20, the upper pressing part 30B, the lifting part 40, a part of the lifting mechanism 50, the alignment mechanism 60, and the spacer mechanism 70.
[0092] The shaft portion 51 is inserted into the through portion 10h on the upper surface of the chamber 10 in a state in which it can be raised and lowered, and the sealed state in the chamber 10 is maintained by a sealing member not shown in the figure. The chamber 10 can be made into a sealed state by closing the opening portion 11 by using the gate valve 12. The chamber 10 is sucked (exhausted) by an unillustrated suction device in the chamber 10, thereby making the chamber 10 a vacuum atmosphere. Moreover, the chamber 10 may also be provided with a valve that can be opened to the outside in order to open the internal vacuum atmosphere. In addition, the chamber 10 may also be connected to a gas supply device not shown in the figure. In addition, whether the substrate bonding device 200 is provided with the chamber 10 is arbitrary, and it may also be a mode without the chamber 10 (atmospheric open type).
[0093] The lower plate 20 , the support plate 21 , the heater 22 , the bottom plate 23 , and the support column 24 are the same as those in the first embodiment described above, and thus description thereof will be omitted.
[0094] like Fig.19 As shown, the upper pressing portion 30B presses the upper substrate S1 toward the substrate S2 side (lower plate 20 side) when attaching the substrate S1 to the substrate S2. The upper pressing portion 30A includes a base 31 and a plurality of push pins 33 provided on the lower surface side of the base 31. The plurality of push pins 33 are provided in a manner extending downward from the base 31 at intervals from each other. The plurality of push pins 33 are respectively provided with a pin 33a at the lower end that can be pressed upward by an elastic member not shown in the figure. The upper pressing portion 30B is provided at the lower end of the shaft portion 51, and its position is fixed in the up and down direction. However, in the case where the shaft portion 51 can be raised and lowered, the upper pressing portion 30B can also be raised and lowered integrally with the shaft portion 51.
[0095] The lifting unit 40 lowers the supported substrates S1 and S2 and places them on the lower plate 20 in order to align the substrates S1 and S2 respectively carried into the chamber 10 by the alignment mechanism 60. The lifting unit 40 raises the supported substrate S1 in order to hold the substrate S1 aligned by the alignment mechanism 60 on the spacer 72. The lifting unit 40 raises the substrate S2 in order to attach the substrate S2 aligned by the alignment mechanism 60 to the substrate S1. In addition, the lifting pin 41, the moving unit 42, the lifting pin driving unit 43 and the alignment mechanism 60 are the same as those in the first embodiment described above, and therefore the description thereof is omitted.
[0096] The lifting mechanism 50 presses the substrate S1 toward the substrate S2 side (the lower plate 20 side) when the upper pressing portion 30B is lowered to bond the substrate S1 to the substrate S2. The lifting mechanism 50 includes the shaft portion 51 and a driving portion 52 that drives the shaft portion 51. The shaft portion 51 is disposed at the center of the base portion 31 when viewed from above. The driving portion 52 raises and lowers the shaft portion 51. The driving portion 52 uses, for example, a cylinder device, a hydraulic cylinder device, a ball screw mechanism using an electric rotary motor, or the like.
[0097] The driving unit 52 is controlled by the control unit C. The load applied to the shaft 51 by the driving unit 52 and the driving timing of applying the load are uniformly controlled by the control unit C based on a preset program or the like. In addition, part or all of the operation of the driving unit 52 may be performed by an operator's operation. By raising and lowering the shaft 51 by the driving unit 52, the upper pressing portion 30B is raised and lowered integrally with the shaft 51.
[0098] like Fig.19 As shown, the spacer mechanism 70 receives and supports the previously loaded substrate S1 from the lift pins 41. The spacer mechanism 70 includes a plurality of spacer driving units 71 and a plurality of spacers (holding units) 72. The spacer driving unit 71 is provided in the chamber 10. The spacer driving unit 71 moves the spacer 72 in the X direction or the Y direction. The spacer driving unit 71 includes, for example, a drive source such as a cylinder device or an electric motor and a transmission mechanism for transmitting the drive force generated by the drive source to the spacer 72.
[0099] The spacer 72 can be moved radially about the central axis AX in a plane orthogonal to the Z direction by a guide member not shown. In order to prevent the substrates S1 and S2 from being charged, the spacer 72 is preferably formed of a conductive material. The spacer mechanism 70 drives the spacer driving unit 71 to advance the spacer 72 and position it below the outer periphery of the substrate S1, thereby holding the substrate S1 placed on the lifting pins 41. The operation of the spacer mechanism 70 is controlled by the control unit C.
[0100] <Substrate bonding method>
[0101] Next, the substrate bonding method according to the present embodiment will be described. Fig. 20 This is a flowchart showing another example of the substrate bonding method according to the present embodiment. Fig.21 It means next Fig. 20 Flowchart of another example of the substrate bonding method of the present embodiment. The substrate bonding method is executed according to an instruction from the control unit C, for example. Figures 22 to 33 1 is a process diagram showing an example of the operation of the substrate bonding device 200. In addition, in these process diagrams, the operation of each part is simplified to facilitate understanding. Fig. 20 , Fig.21 The flowchart is described below.
[0102] First, the gate valve 12 of the chamber 10 is opened and the substrate is loaded (step S101). Fig. 22 As shown, the control unit C raises the gate valve 12 to open the opening 11. Then, the arm 91 of the conveying device 90 moves the substrate S1 from the opening 11 into the chamber 10 and transfers it to the lift pins 41 (step S102). Fig.23 As shown, the control unit C lowers the lift pins 41 to place the substrate S1 on the plurality of support members 80 (pins 81 ) of the lower plate 20 (step S103 ). Alternatively, the substrate S1 may be heated by the heater 22 .
[0103] Then, if Fig.24 As shown, the control unit C performs an alignment operation on the substrate S1 (step S104). Step S104 and Figure 6 The step S04 shown in FIG. 1 is the same as the step S04 shown in FIG. 1 , and therefore the description thereof is omitted. After the alignment operation, the control unit C causes each alignment block 62 to retract radially outward, and then causes the lifting pin 41 to rise, thereby arranging the substrate S1 at a position above the spacer 72. Next, the substrate S1 is held by the spacer 72 (step S105). Fig.25 As shown, the control unit C raises the lifting pins 41 to receive the substrate S1 from the supporting member 80, and after raising the substrate S1, drives the spacer driving unit 71 to advance the spacer 72 so that the spacer 72 is arranged on the lower surface side of the substrate S1. Then, by lowering the lifting pins 41, the substrate S1 is held by the spacer 72.
[0104] Next, the substrate S2 is moved into the chamber 10 (step S106). Fig.26 As shown, after the lift pin 41 is lowered to the delivery height of the substrate S2, the substrate S2 is delivered from the arm 91 to the lift pin 41 by the arm 91. Next, the gate valve 12 is closed, and a warpage suppression baking process is performed to suppress the warpage of the substrate S2 (step S107). Fig. 27As shown, after closing the gate valve 12, for example, the chamber 10 is evacuated by a suction device (not shown), while the substrate S2 is heated by the heater 22 to perform the warpage suppression baking process. In addition, the warpage suppression baking process can be performed with the gate valve 12 open (i.e., open to the atmosphere).
[0105] Next, the chamber 10 is set to a vacuum atmosphere (step S108). The chamber 10 is evacuated by a suction device (not shown), thereby setting the chamber 10 to a vacuum atmosphere. Fig.28 As shown, the lifting pin 41 is lowered to place the substrate S2 on the lower plate 20. Then, the substrate S2 is heated by the heater 22. The warpage suppression baking process can be performed in a vacuum atmosphere or in a state open to the atmosphere. Fig.29 As shown, the control unit C performs an alignment operation on the substrate S2 (step S109). Step S109 and Figure 6 The step S08 shown is the same, so the description is omitted. The alignment operation of step S109 is the same as the alignment operation of step S104.
[0106] Next, the control unit C raises the substrate S2 by raising the lifting pins 41, so that the substrate S2 approaches the lower surface of the spacer 72 (step S110). The upper surface of the substrate S2 can be separated from the lower surface of the spacer 72, or it can be in contact with the lower surface of the spacer 72. In this state, the spacer 72 is clamped by the substrate S1 and the substrate S2. In addition, the substrate S1 and the substrate S2 can also be in contact in the portion without the spacer 72. Next, as shown in FIG. Fig.30 As shown, the control unit C drives the driving unit 52 to lower the upper pressing unit 30 together with the shaft 51 , and presses the substrate S1 against the substrate S2 using the pressing pins 33 of the upper pressing unit 30 , so that the substrates S1 and S2 overlap (step S111 ).
[0107] In step S111, the pin 33a provided at the lower end of the pressing pin 33 overcomes the elastic force of the elastic member and is pressed in by the pressing pin 33. According to this structure, the substrate S1 can be pressed against the substrate S2 with good balance by the plurality of pressing pins 33.
[0108] Then, if Fig.31 As shown in FIG. 1 , the control unit C causes the spacer 72 to retreat to its original position (step S112). As the spacer 72 retreats, the portion holding the spacer 72 disappears, and the substrate S1 is pressed by the push pin 33, thereby bonding the substrate S1 to the substrate S2. Fig.32As shown, the lifting pins 41 are lowered, and the substrate S after the bonding is arranged at a height for carrying out. Through this process, the substrate S is separated from both the lower plate 20 and the upper pressing part 30B. Then, a valve not shown is opened to open the chamber 10 to the atmosphere, or a predetermined gas is supplied to the chamber 10 to purge the chamber 10 (step S113). As the predetermined gas, for example, nitrogen gas, dry air, etc. are used.
[0109] Then, if Fig.33 As shown, the gate valve 12 is opened to carry out the substrate S from the chamber 10 (step S114). After the opening 11 is opened, the substrate S is carried out by the arm 91 of the transfer device 90. Then, the control unit C closes the gate valve 12, and a series of processes are completed.
[0110] As described above, in the substrate bonding apparatus 100, 200 of the embodiment, the support member 80 abuts against the lower surface outer peripheral portion F1 of the substrate S1, S2 to support the substrate S1, so that the friction between the support member 80 and the lower surface inner peripheral portion F2 of the substrate S1 can be suppressed when positioning the substrate S1. Therefore, according to the substrate bonding apparatus 100, 200 of the embodiment, it is possible to suppress damage to the functional surface of the substrate S1, generation of foreign matter, chip scattering, etc. during alignment and bond the substrates S1, S2 to each other with good quality.
[0111] The above embodiment and the modified example are described, but the present invention is not limited to the above description, and various changes can be made within the scope of the main purpose of the present invention. In the above embodiment, the method of attaching two substrates S1 and substrate S2 is used as an example, but it is not limited to this method. For example, it is also possible to further attach another substrate to the substrate S formed by attaching the substrate S1 and the substrate S2.
[0112] In the above-mentioned embodiment, when the substrate S2 is positioned by the alignment block 62 , the substrate S2 is supported by a plurality of support members 80 . However, in the case of the substrate S2 , the substrate S2 may be positioned by being clamped by the alignment block 62 while being supported by the lift pins 41 .
[0113] In addition, to the extent permitted by law, the contents of all documents cited in Japanese Patent Application No. 2022-052820 and the above-described embodiments, etc., are incorporated as part of the description of this document. Description of Reference Numerals
[0114] 10…Chamber
[0115] 20…lower side panel
[0116] 23f…upper surface
[0117] 30A, 30B…Upper side pressing part
[0118] 32…Suction pad (holding part)
[0119] 33…Push pin
[0120] 41…Lifting pin
[0121] 50…Lifting mechanism
[0122] 60…Alignment mechanism
[0123] 62…Alignment block
[0124] 72…Spacer (holding portion)
[0125] 80…Supporting member
[0126] 81…Pin
[0127] 100, 200...Substrate bonding device
[0128] Af… Functional Area
[0129] F1…Lower surface periphery
[0130] S…Substrate
Claims
1. A substrate bonding device, which bonds two substrates together, wherein: The substrate bonding device comprises: a lower side plate on the lower side; Lifting pins, the lifting pins are arranged on the lower side plate, supporting the substrate to be carried in and lifting it up and down; a holding portion that receives and holds the previously carried-in substrate from the lift pins; An upper pressing portion, which is disposed above the lower plate and can abut against an upper surface side of the upper substrate of the two substrates to be bonded; a supporting member, the supporting member being disposed on the lower side plate and abutting against an outer peripheral portion of a lower surface of the substrate to support the substrate when the lifting pin is lowered; as well as An alignment mechanism positions the substrate by sandwiching the substrate supported by the support member in a direction along the surface of the substrate.
2. The substrate bonding device according to claim 1, wherein: The support member is a pin provided at three or more locations at intervals in the circumferential direction of the lower plate and protruding from the upper surface of the lower plate.
3. The substrate bonding device according to claim 2, wherein: The alignment mechanism includes a plurality of alignment blocks that can move forward and backward in a direction along the surface of the substrate to sandwich the substrate. The plurality of alignment blocks are disposed in a state where they are offset from the pin in the circumferential direction of the lower plate.
4. The substrate bonding device according to any one of claims 1 to 3, wherein: When the functional area of the substrate faces downward, the lift pins abut against the functional area to support the substrate. The support member is in contact with the outer peripheral portion of the lower surface of the substrate received by the lift pins, which is located outside the functional region, to support the substrate.
5. The substrate bonding device according to any one of claims 1 to 3, wherein: The upper pressing portion can be raised and lowered. The substrate bonding apparatus includes a lifting mechanism for lifting and lowering the upper pressing portion.
6. The substrate bonding device according to any one of claims 1 to 3, wherein: One or both of the lower plate and the upper pressing portion include a heating portion for heating the substrate.
7. The substrate bonding device according to any one of claims 1 to 3, wherein: The substrate bonding device includes a chamber that accommodates the lower plate and the upper pressing portion.
8. The substrate bonding device according to claim 2, wherein: The top end of the pin is hemispherical.
9. A substrate bonding method, wherein the substrate bonding method is a method for bonding two substrates, wherein: The substrate bonding method comprises the following steps: supporting the introduced substrate by using lift pins; The lifting pins are handed over to a support member that abuts against an outer peripheral portion of a lower surface of the substrate and the substrate is supported by the support member; and The substrate is positioned by sandwiching the substrate supported by the support member in a direction along the surface of the substrate.